Film forming equipment

Abstract

To provide a technology for improving convenience when measuring a film thickness of a substrate on which a film is deposited.SOLUTION: A film deposition apparatus includes: a film deposition chamber in which a film deposition unit for depositing a film to a substrate is installed; transportation means for transporting a substrate between a film deposition position of the substrate and a receiving position of the substrate while holding the substrate on a lower side; and measurement means for measuring a thickness of a film formed on the substrate held to the transportation means.SELECTED DRAWING: Figure 26

Description

[Technical Field]

[0001] The present invention relates to a film forming apparatus for measuring the film thickness of an organic material vapor-deposited on a glass substrate. [Background technology]

[0002] A known film formation line includes an apparatus for transporting substrates to film formation chambers and forming films on the substrates as manufacturing equipment for organic EL displays, etc. As an example, Patent Document 1 discloses a cluster-type film formation apparatus in which substrates are transported from a common transport chamber to multiple film formation chambers by an articulated robot.

[0003] Furthermore, Cited Document 2 discloses that a film thickness inspection chamber for measuring the film thickness formed on a substrate on which a film has been formed in a film formation chamber is disposed on the film formation line. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Publication No. 2019-192898 [Patent Document 2] Japanese Patent Application Laid-Open No. 2005-322612 Summary of the Invention [Problem to be solved by the invention]

[0005] However, as substrates become larger, larger film thickness inspection chambers are also required, which poses the problem of increasing the size of the entire film formation line.

[0006] In view of the above-mentioned problems, an object of the present invention is to provide a technique for improving convenience when measuring the film thickness of a substrate on which a film has been formed. [Means for solving the problem]

[0007] In order to solve the above problems, the film forming apparatus according to the present invention comprises: a film formation chamber provided with a film formation unit for forming a film on a substrate; a transfer robot that transfers the substrate to a receiving position while holding the substrate on an upper side of a hand; While holding the board down, a receiving position for the substrate and Film deposition position on the substrate with Between the board By moving the substrate in a direction parallel to the substrate holding surface, A conveying means for conveying the material; While the transport means transports the substrate on which the film has been formed by the film forming unit from the film forming position to the receiving position, a measuring means for measuring the thickness of a film formed on the substrate held by the conveying means; Equipped with. [Effects of the Invention]

[0008] This makes it possible to provide a technique for improving convenience when measuring the film thickness of a substrate on which a film has been formed. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. 1 is a layout diagram of a film forming system according to an embodiment of the present invention. [Figure 2] 1A and 1B are a plan view and a side view of a transport unit. [Figure 3] FIG. 3 is a perspective view of a hand of the transport unit of FIGS. 2A and 2B. [Figure 4] (A) and (B) are explanatory diagrams of the bending of the substrate and the function of the support member. [Figure 5] FIG. [Figure 6] FIG. 6 is a cross-sectional view of the transport unit of FIG. 5. [Figure 7] 10A and 10B are explanatory diagrams of the substrate transfer operation. [Figure 8] 10A and 10B are explanatory diagrams of the substrate transfer operation. [Figure 9] 10A and 10B are explanatory diagrams of the substrate transfer operation. [Figure 10] 10A and 10B are explanatory diagrams of the substrate transfer operation. [Figure 11] (A) to (F) are diagrams illustrating the movement of the evaporation source. [Figure 12] 10A and 10B are explanatory diagrams of the mask transport operation to the mask table. [Figure 13] 10A and 10B are explanatory diagrams of the mask transport operation to the mask table. [Figure 14] 10A and 10B are explanatory diagrams of the substrate transport operation and alignment operation. [Figure 15] 1A and 1B are explanatory diagrams of a film forming operation on a substrate. [Figure 16] 1A to 1C are explanatory diagrams showing an example of the operation of the entire film forming apparatus. [Figure 17] 1A to 1C are explanatory diagrams showing an example of the operation of the entire film forming apparatus. [Figure 18] 1A to 1C are explanatory diagrams showing an example of the operation of the entire film forming apparatus. [Figure 19] 1A to 1C are explanatory diagrams showing an example of the operation of the entire film forming apparatus. [Figure 20] 1A to 1D are explanatory diagrams showing an example of the operation of the entire film forming apparatus. [Figure 21] 10(A) to 10(C) are explanatory diagrams of another deposition source and its moving unit. [Figure 22] (A) and (B) are explanatory diagrams of the alignment unit. [Figure 23] 10(A) to 10(C) are explanatory diagrams of other configuration examples of a film forming apparatus. [Figure 24] FIG. 10 is an explanatory diagram of another example of the configuration of the holding unit. [Figure 25] (A) is an overall view of an organic EL display device, and (B) is a diagram showing the cross-sectional structure of one pixel. [Figure 26] FIG. 2 is an explanatory diagram showing an example of the arrangement of a film thickness measuring device. [Figure 27] 4A and 4B are cross-sectional views of a film thickness measuring device in each arrangement example. [Figure 28] 1(A) to 1(C) are explanatory diagrams showing the measurement principle of a film thickness measurement device. [Figure 29] 1A to 1C are explanatory diagrams showing an example of the configuration of a film thickness measuring device. [Figure 30] FIG. 10 is an explanatory diagram showing an example of change in reflectance of a substrate before and after film formation. [Figure 31] FIG. 2 is an explanatory diagram showing an example of the configuration of a top plate of a film forming apparatus. [Figure 32] FIG. 2 is an explanatory diagram showing a substrate and a substrate carrier. [Figure 33] FIG. 2 is an explanatory diagram showing the configuration of a fiber joint. DETAILED DESCRIPTION OF THE INVENTION

[0010] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments do not limit the scope of the invention claimed. Although multiple features are described in the embodiments, not all of these multiple features are necessarily essential to the invention, and multiple features may be combined arbitrarily. Furthermore, in the accompanying drawings, the same reference numerals are used to designate the same or similar components, and redundant explanations will be omitted.

[0011] First Embodiment <System Overview> 1 is a layout diagram of a film forming system 100. In each diagram, arrow Z indicates the vertical direction (direction of gravity), arrows X and Y indicate horizontal directions that are orthogonal to each other, and arrow θ indicates the direction of rotation around the Z axis.

[0012] The film formation system 100 has a configuration in which an intermediate transfer device 101, a film formation device 1, and an intermediate transfer device 102 are arranged in the X direction, and substrates W are transferred and processed in this order. The intermediate transfer device 101 is located upstream in the transfer direction of the substrate W, and the intermediate transfer device 102 is located downstream in the transfer direction of the substrate W. In the example shown in the figure, the film formation system 100 includes one film formation device 1, but another film formation device 1 can be provided upstream of the intermediate transfer device 101 or downstream of the intermediate transfer device 102. The control device 103 includes a processor such as a CPU, a storage device such as a semiconductor memory or a hard disk, and an input / output interface, and controls the film formation system 100.

[0013] The intermediate transfer devices 101 and 102 are equipped with a transfer robot 110. The transfer robot 110 is a double-arm robot in which two sets of arms 110b and hands 110c are supported on a base 110a. The two sets of arms 110b and hands 110c rotate in the θ direction on the base 110a and are also extendable. A stocker 104 in which masks M are stored is provided adjacent to the intermediate transfer devices 101 and 102. The transfer robot 110 transfers masks M in addition to transferring substrates W. The hand 110c is fork-shaped, and the substrates M and masks M are placed on the hand 110c for transfer.

[0014] The film formation apparatus 1 is an apparatus that performs a film formation process on a substrate W carried in from an intermediate transfer device 101 and carries the substrate out to an intermediate transfer device 102. The film formation apparatus 1 includes a delivery chamber 2 that delivers and receives the substrate W, and a plurality of film formation chambers 3 that are arranged adjacent to the delivery chamber 2. In this embodiment, two film formation chambers 3 are provided, one on each side of the delivery chamber 2 in the Y direction. The delivery chamber 2 and the film formation chamber 3 are surrounded by walls 20 and 30, respectively, and can be kept airtight.

[0015] In the film formation chamber, a deposition material is formed on the substrate W. A mask M can be used to form a thin film of the deposition material in a predetermined pattern on the substrate W. The material of the substrate W can be selected appropriately from glass, resin, metal, etc., and typically, a substrate having a resin layer such as polyimide formed on glass is used. In this embodiment, the substrate W is rectangular. The deposition material is an organic material or an inorganic material (metal, metal oxide, etc.). The film formation apparatus 1 is applicable to manufacturing apparatuses for manufacturing electronic devices such as display devices (such as flat panel displays), thin-film solar cells, and organic photoelectric conversion elements (organic thin-film imaging elements), as well as optical components, and is particularly applicable to manufacturing apparatuses for manufacturing organic EL panels.

[0016] <Delivery room> The delivery chamber 2 not only delivers the substrates W and masks M between the intermediate transfer devices 101 and 102 and the film formation device 1, but also distributes the substrates W and masks M to the film formation chambers 3. Therefore, the delivery chamber 2 can also be called a sorting chamber.

[0017] <Multi-directional transport unit> The delivery chamber 2 is provided with a transport unit 4 that transports a substrate W and a mask M. The transport unit 4 receives the substrate W or the mask M from the intermediate transport device 101 and delivers it to the holding units 6A to 6D. The transport unit 4 also transports the substrate W or the mask M received from the holding units 6A to 6D to the intermediate transport device 102. FIGS. 2(A) and 2(B) are a plan view and a side view of the transport unit 4.

[0018] The transport unit 4 of this embodiment is a horizontal, articulated robot capable of moving a substrate W or the like in multiple directions on the XY plane, and includes a cylindrical base 40, an arm 41 supported on the base 40, and a hand 44 supported by the arm 41. The base 40 has a drive shaft 40a, and rotation of the drive shaft 40a in the θ direction causes the arm 41 to rotate about the Z1 axis, and vertical movement of the drive shaft 40a causes the arm 41 to rise and fall. The arm 41 includes arm members 42 and 43. One end of the arm 42 is connected to the drive shaft 40a, and the other end is connected to one end of the arm member 43. The arm member 43 is connected to the arm member 42 so as to be rotatable about the Z2 axis. The hand 44 is connected to the other end of the arm member 43 so as to be rotatable about the Z3 axis.

[0019] In addition to Figures 2(A) and 2(B), reference will be made to Figure 3. Figure 3 is a perspective view of a hand 44. The hand 44 comprises a plate-shaped hand body 45 and a plurality of support members 46 to 48 that are erected on the hand body 45 and support the substrate W. The support members 46 to 48 are broadly divided into support member 46 located in the center of the hand body 45 and support members 47 and 48 located in the peripheral portions. The substrate W is placed on the plurality of support members 46 to 48. When the substrate W is supported by the hand 44, support member 46 is located in the center of the substrate W, and support members 47 and 48 are located in the peripheral portions of the substrate W.

[0020] The support member 46 includes a pin 46a and an elastic member 46b provided at the tip of the pin 46a. The support member 47 includes a pin 47a, a mounting portion 47b provided at the tip of the pin 47a, and an elastic member 47c provided on the upper surface of the mounting portion 47b and located at the tip of the support member 47. The support member 48 includes a plurality of pins 48a, mounting portions 48b provided at the tips of the plurality of pins 48a, and a plurality of elastic members 48c provided on the upper surface of the mounting portion 48b and located at the tip of the support member 48.

[0021] Supporting the substrate W with these support members 46-48 allows the substrate W to be supported with a small area, and prevents scratches and the like from occurring on the surface of the substrate W. Furthermore, the elastic members 46b, 47c, and 48c are portions that come into contact with the substrate W and are made of, for example, resin. The contact of the elastic members 46b, 47c, and 48c with the substrate W more reliably prevents scratches and the like from occurring on the surface of the substrate W.

[0022] As shown in Fig. 2(B), the relationship between the height H1 of the support member 46 from the hand body 45 and the height H2 of the support members 47 and 48 is H1>H2. This makes it possible to prevent the central portion of the substrate W from sagging. Figs. 4(A) and 4(B) are explanatory diagrams illustrating the state in which the holding unit 6A receives the substrate W from the hand 44.

[0023] As will be described later, in this embodiment, the holding units 6A to 6D hold the substrate W by electrostatic force. When the holding units 6A to 6D receive the substrate W, if the flatness of the substrate W is low, the suction force decreases. Furthermore, the accuracy of film formation during film formation also decreases. FIG. 4(A) shows, as a comparative example, a case in which the hand 44 does not include the support member 46 and the substrate W is supported by the support member 47 (and support member 48). With a large substrate W, the center portion thereof bends and sags due to its own weight. If the holding unit 6A suctions the substrate W in this state, a gap may form between the center portion of the substrate W and the lower surface (holding surface) of the holding unit 6A, resulting in a decrease in the suction force.

[0024] 4(B), the relationship between the height H1 of the support member 46 and the height H2 of the support members 47 and 48 is H1>H2, so that the center of the substrate W is supported by the support member 46, and the center of the substrate W is slightly raised. Even for large substrates W, the center is prevented from bending and sagging due to its own weight; rather, the center of the substrate W comes into contact with the holding unit 6A before the peripheral edge. As a result, suction spreads from the center of the substrate W to the peripheral edge, and the entire substrate W is held by the holding unit 6A without any gaps.

[0025] <Sliding transport unit> 1, the film formation apparatus 1 includes two transport units 5A and 5B arranged from the delivery chamber 2 to the two film formation chambers 3. The transport unit 5A includes holding units 6A and 6C and a moving unit 7A that moves these units independently in parallel in the Y direction. The transport unit 5B has the same structure as the transport unit 5A and includes holding units 6B and 6D and a moving unit 7B that moves these units independently in parallel in the Y direction.

[0026] Fig. 5 shows the portions of the transport units 5A and 5B arranged in the delivery chamber 2, and Fig. 6 shows a cross-sectional view of the transport unit 5A (moving unit 7A and holding unit 6A). The transport units 5A and 5B are units that move holding units 6A to 6D independently in a horizontal position in the Y direction at a position higher than the transport unit 4, and are arranged side by side in the X direction. Note that Fig. 6 shows the structure of the transport unit 5A (moving unit 7A and holding unit 6A) as a representative, but the holding units 6A to 6D have the same structure, and the moving units 7A and 7B also have the same structure.

[0027] The moving units 7A and 7B of this embodiment are mechanisms that move the holding units 6A to 6D by magnetic force, and in particular, mechanisms that levitate and move by magnetic force. Each of the moving units 7A and 7B includes a pair of guide members 70 that define the movement trajectory of the holding units 6A to 6D in the Y direction. Each guide member 70 has a C-shaped cross section and is a rail member that extends in the Y direction. The pair of guide members 70 are spaced apart from each other in the X direction.

[0028] Each guide member 70 includes a large number of pairs of magnetic elements 71 spaced apart in the Z direction. The large number of pairs of magnetic elements 71 are arranged at equal pitches in the Y direction. At least one of the pair of magnetic elements 71 is an electromagnet, and the other is an electromagnet or a permanent magnet.

[0029] The holding units 6A to 6D are carriers for transporting substrates W and masks M. Each of the holding units 6A to 6D includes a main body member 60 that is rectangular in plan view. Each end of the main body member 60 in the X direction is inserted into a corresponding guide member 70. A permanent magnet 61 with a yoke (not shown) is fixed to the upper and lower surfaces of each end of the main body member 60 in the X direction. A plurality of upper and lower permanent magnets 61 are provided on the main body member 60 in the Y direction. The permanent magnets 61 face magnetic elements 71 of the guide member 70. A levitation force can be generated in the holding units 6A to 6D by the repulsive force between the permanent magnets 61 and the magnetic elements 71. By sequentially switching the magnetic elements 71 that generate magnetic force among the many magnetic elements (electromagnets) 71 provided in the Y direction, a moving force in the Y direction can be generated in the holding units 6A to 6D by the attractive force between the permanent magnets 61 and the magnetic elements 71.

[0030] In this embodiment, the moving units 7A and 7B are magnetic levitation transport mechanisms, but they may be other transport mechanisms capable of moving the holding units 6A to 6D, such as a roller transport mechanism, a belt transport mechanism, or a rack-and-pinion mechanism.

[0031] A scale 72 extending in the Y direction is disposed on the guide member 70, and a sensor 64 that reads the scale 72 is provided on the main body member 60. The position of each of the holding units 6A to 6D in the Y direction can be identified based on the detection result of the sensor 64.

[0032] Each of the holding units 6A to 6D includes a holder 62 that holds the substrate W. In this embodiment, the holder 62 is an electrostatic chuck that attracts the substrate W by electrostatic force, and the holder 62 includes a plurality of electrodes 62a arranged on the lower surfaces of the holding units 6A to 6D. Each of the holding units 6A to 6D also includes a holder 63 that holds the mask M. The holder 63 is, for example, a magnetic chuck that attracts the mask M by magnetic force, and is located outside the holder 62 in the X direction. The holder 63 may also be a clamping mechanism that mechanically clamps the mask M.

[0033] <Board receiving operation> The holding units 6A to 6D receive the substrates W and masks M transferred from the transport unit 4 at predetermined positions within the delivery chamber 2. Figure 5 shows the holding units 6A to 6D positioned at the respective receiving positions PA to PD. The receiving positions PA to PD are arranged in a matrix (2 x 2) on the XY plane and are set inside the delivery chamber 2, outside the film formation chamber 3. The presence of four different receiving positions PA to PD also allows these receiving positions PA to PD to be used as buffers for holding substrates W in the event of a system failure downstream.

[0034] 7(A) to 8(B) show an example of the receiving operation of the holding unit 6B of the substrate W from the transport unit 4 at the receiving position PB. FIG. 7(A) shows the state in which the transport unit 4 receives the substrate W from the intermediate transport device 101. The substrate W is placed on the hand 44. In other words, the substrate W is supported by the hand 44 from its underside. The holding unit 6B is moved to the receiving position PB by the moving unit 7B. FIG. 7(B) shows the state in which the hand 44 has moved below the holding unit 6B by the operation of the arm portion 41 of the transport unit 4. In the state of FIG. 7(B), the hand 44 has rotated 90 degrees in the θ direction from the state of FIG. 7(A). As a result, the substrate W changes from a position in which its longitudinal direction faces the X direction (FIG. 7(A)) to a position in which it faces the Y direction (FIG. 7(B)).

[0035] 7(B), the holding unit 6B is aligned with the substrate W. An alignment camera 21 is provided in the delivery chamber 2. The relative positions of the holding unit 6B and the substrate W are identified from the image captured by the camera 21, and the position of the substrate W in the X, Y, and θ directions is adjusted by the transport unit 4.

[0036] 8(A) shows a state in which the arm portion 41 of the transport unit 4 has been raised and the substrate W has come into contact with the holder 62 of the holding unit 6B. The substrate W is held by the holder 62 by the electrostatic force of the holder 62. In this manner, in this embodiment, the substrate W is transferred from the transport unit 4 to the holding unit 6B from bottom to top. FIG. 8(B) shows a state in which the arm portion 41 of the transport unit 4 has been lowered and the holding unit 6B has completed receiving the substrate W.

[0037] The same applies to the transfer of the substrate W between the transport unit 4 and the other holding units 6A, 6C, and 6D. As an example, FIGS. 9(A) to 10(B) show an example of the receiving operation of the holding unit 6A to receive the substrate W from the transport unit 4 at the receiving position PA. FIG. 9(A) shows a state in which the transport unit 4 receives the substrate W from the intermediate transport device 101. The substrate W is supported from its underside by the hand 44. The holding unit 6A is moved to the receiving position PA by the moving unit 7A. FIG. 9(B) shows a state in which the hand 44 has moved below the holding unit 6B by the operation of the arm portion 41 of the transport unit 4. In the state of FIG. 9(B), the hand 44 has rotated 90 degrees in the θ direction from the state of FIG. 9(A). As a result, the substrate W changes from a position in which its longitudinal direction faces the X direction (FIG. 9(A)) to a position in which it faces the Y direction (FIG. 9(B)).

[0038] 9(B), the holding unit 6A is aligned with the substrate W. The relative positions of the holding unit 6A and the substrate W are identified from an image captured by the camera 21 provided in the delivery chamber 2, and the position of the substrate W in the X direction, Y direction, and θ direction is adjusted by the transport unit 4.

[0039] Fig. 10(A) shows a state in which the arm portion 41 of the transport unit 4 is raised and the substrate W is brought into contact with the holder 62 of the holding unit 6A. The substrate W is held by the holder 62 by the electrostatic force of the holder 62. Fig. 10(B) shows a state in which the arm portion 41 of the transport unit 4 is lowered and the holding unit 6A has completed receiving the substrate W.

[0040] The above has been described regarding the receiving operation of the substrate W, but the same applies to the receiving operation of the mask M.

[0041] <Film forming chamber> In the film formation chamber 3, a film is formed on a substrate W using a mask M. As shown in FIG. 1, two mask stages 31 are arranged in each of the two film formation chambers 3. A total of four mask stages 31 define deposition positions JA to JD where deposition processes are performed. The two film formation chambers 3 have the same structure. Each film formation chamber 3 is provided with a deposition source 8 and a moving unit 9 that moves the deposition source 8. The structures and operations of the deposition source 8 and the moving unit 9 will be described with reference to FIGS. 11(A) to 11(F).

[0042] The deposition source 8 is a film-forming unit that includes a crucible that contains the raw material of the deposition substance, a heater that heats the crucible, and the like, and that heats the raw material and releases the vapor of the deposition substance upward from the opening 8a. The movement unit 9 includes an actuator 90, a pair of movable rails 94, and a pair of fixed rails 95. The actuator 90 includes a drive source 93, an arm member 91, and an arm member 92. One end of the arm member 91 is connected to the drive source 93 and is rotated by the drive source 93. The other end of the arm member 91 is rotatably connected to one end of the arm member 92, and the other end of the arm member 92 is rotatably connected to the bottom of the deposition source 8.

[0043] The pair of movable rails 94 guides the movement of the vapor deposition source 8 in the Y direction. Each movable rail 94 extends in the Y direction, and the pair of movable rails 94 are spaced apart from each other in the X direction. The pair of fixed rails 95 guides the movement of the pair of movable rails 94 in the X direction. Each fixed rail 95 is fixed so as to be immovable, and extends in the Y direction. The pair of fixed rails 95 are spaced apart from each other in the Y direction.

[0044] By driving the actuator 90, the deposition source 8 slides in the Y direction below the deposition position JA (below the mask table 31), then slides from the deposition position JA side to the deposition position JB side, and further slides in the Y direction below the deposition position JB (below the mask table 31). Specifically, when the arm members 91 and 92 are rotated by driving the actuator 90 from the position shown in FIG. 11(A), the deposition source 8 passes below the deposition position JA in the Y direction guided by the pair of movable rails 94 as shown in FIG. 11(B). When the arm members 91 and 92 are rotated in the opposite direction by driving the actuator 90 from this state, the deposition source 8 passes below the deposition position JA in the Y direction as shown in FIG. 11(C) and returns to the position shown in FIG. 11(A).

[0045] When the arm members 91 and 92 are further rotated by driving the actuator 90, the vapor deposition source 8 and the pair of movable rails 94 move in the X direction toward the vapor deposition position JB, guided by the pair of fixed rails 95. When the arm members 91 and 92 are further rotated from the position shown in Figure 11(D) by driving the actuator 90, the vapor deposition source 8 passes below the vapor deposition position JB in the Y direction, guided by the pair of movable rails 94, as shown in Figure 11(E). When the arm members 91 and 92 are rotated in the opposite direction by driving the actuator 90 from this state, the vapor deposition source 8 passes below the vapor deposition position JB in the Y direction, as shown in Figure 11(F), and returns to the position shown in Figure 11(D).

[0046] In this manner, in this embodiment, by moving one vapor deposition source 8, the vapor deposition source 8 can be shared by two vapor deposition positions, ie, the vapor deposition position JA and the vapor deposition position JB. Next, the operation of placing the mask M on the mask stage 31, the operation of aligning the mask M with the substrate W, and the subsequent film formation operation will be described with reference to FIGS. 12(A) to 15(B).

[0047] First, the operation of mounting the mask M on the mask stage 31 will be described. Figures 12(A) to 13(B) show the operation of mounting the mask M on the mask stage 31 at the deposition position JA. From the state shown in Figure 12(A), the holding unit 6A holding the mask M is moved onto the mask stage 31 by the moving unit 7A. When the mask M reaches a predetermined position on the mask stage 31 as shown in Figure 13(A), the magnetic force of the magnetic element 71 of the moving unit 7A is adjusted to reduce the levitation amount of the holding unit 6A, and the holding of the mask M by the holding unit 6A is released, as shown in Figure 13(B). This causes the mask M to be mounted on the mask stage 31.

[0048] Next, the alignment operation and film formation operation will be described. FIG. 14(A) shows a state in which the holding unit 6A holding the substrate W is being moved by the moving unit 7A to the deposition position JA. When the substrate W reaches above the mask M, the substrate W and the mask M are aligned in the XY plane. In the alignment, as shown in FIG. 14(B), the camera 32 captures images of the alignment marks on the substrate W and the mask M, respectively, and calculates the amount of misalignment between the substrate W and the mask M from the captured images. The position of the substrate W is then adjusted to reduce the calculated amount of misalignment. In this embodiment, the position of the substrate W is adjusted by adjusting the magnetic force of the magnetic elements 71 of the moving unit 7A. By adjusting the magnetic forces of the magnetic elements 71 spaced apart in the X and Y directions, the position of the holding unit 6A can be displaced in the X, Y, and θ directions, thereby displacing the position of the substrate W held by the holding unit 6A in the X, Y, and θ directions. For example, by strengthening the magnetic force of the magnetic element 71 provided on one of the pair of guide members 70, the holding unit 6A and the substrate W can be displaced toward one of the guide members 70 by the attraction of the magnetic force (or toward the other guide member 70 by the repulsion of the magnetic force).

[0049] The imaging by the camera 32 and the alignment of the substrate W and the mask M by adjusting the magnetic force of the magnetic element 71 may be repeated until the amount of misalignment between them falls within an allowable range. Once the alignment is complete, as shown in FIG. 15(A), the magnetic force of the magnetic element 71 of the moving unit 7A is adjusted to lower the levitation amount of the holding unit 6A, and the substrate W is placed on the mask M. The holding of the substrate W by the holding unit 6A is not released. Next, the film formation operation is performed. As shown in FIG. 15(B), the evaporation source 8 is moved and the evaporation material is released from the evaporation source 8 onto the substrate W. A film of the evaporation material that has passed through the mask M is formed on the substrate W. During film formation, the substrate W remains held by the holding unit 6A.

[0050] <Example of film formation equipment operation> 16(A) to 20(D), an example of the operation of the film formation apparatus 1 to continuously form films on a plurality of substrates W will be described. First, the mask M is transported to the mask stage 31 at each of the deposition positions JA to JD. FIG. 16(A) shows the state in which the first mask M has been transported from the intermediate transport device 101. The transport unit 4 receives the mask M on the hand 44, and as shown in FIG. 16(B), passes the mask M to the holding unit 6A at the receiving position PA. The holding unit 6A holds the mask M from above.

[0051] As shown in FIG. 16(C), the second mask M is transported from the intermediate transport device 101. At the same time, the holding unit 6A is moved parallel to the deposition position JA by the moving unit 7A. The transport unit 4 receives the second mask M on the hand 44, and as shown in FIG. 17(A), hands over the mask M to the holding unit 6C at the receiving position PC. The holding unit 6C holds the mask M from above. At the same time, the first mask M is placed on the mask stage 31 at the deposition position JA, and the holding unit 6A returns to the receiving position PA.

[0052] As shown in FIG. 17(B), the third mask M is transported from the intermediate transport device 101. At the same time, the holding unit 6C is moved parallel to the deposition position JC by the moving unit 7A. The transport unit 4 receives the third mask M on the hand 44 and hands over the mask M to the holding unit 6B at the receiving position PB. By repeating the above procedure, the masks M are placed at the deposition positions JA to JD, as shown in FIG. 17(C).

[0053] Next, a series of operations for forming a film on a substrate W will be described. Fig. 18(A) shows the state in which the first substrate W has been transported from the intermediate transport device 101. The transport unit 4 receives the substrate W on the hand 44, and as shown in Fig. 18(B), hands the substrate W over to the holding unit 6A at the receiving position PA. The holding unit 6A holds the substrate W from above.

[0054] As shown in FIG. 18(C), a second substrate W is transported from the intermediate transport device 101. In parallel, the holding unit 6A that has received the substrate W is moved parallel to the deposition position JA by the moving unit 7A. At the deposition position JA, the substrate W and the mask M are aligned. The transport unit 4 receives the second substrate W on the hand 44, and as shown in FIG. 19(A), hands the substrate W over to the holding unit 6C at the receiving position PC. The holding unit 6C holds the substrate W from above. In parallel, a film formation operation is performed on the first substrate W by the deposition source 8 at the deposition position JA.

[0055] As shown in FIG. 19(B), the third substrate W is transported from the intermediate transport device 101. Concurrently, the holding unit 6C, which has received the second substrate W, is moved parallel to the deposition position JC by the moving unit 7A. At the deposition position JC, the substrate W and the mask M are aligned. The transport unit 4 receives the third substrate W on the hand 44 and, as shown in FIG. 19(C), hands the substrate W to the holding unit 6B at the receiving position PB. The holding unit 6B holds the substrate W from above. Concurrently, the deposition source 8, which has completed film formation at the deposition position JA, is moved toward the deposition position JB. Furthermore, a film formation operation is performed on the second substrate W by the deposition source 8 at the deposition position JC.

[0056] As shown in Figure 20(A), the fourth substrate W is transported from the intermediate transport device 101. At the same time, the holding unit 6B, which has received the third substrate W, is moved parallel to the deposition position JB by the moving unit 7B. At the deposition position JB, the substrate W is aligned with the mask M. Furthermore, the holding unit 6A, which holds the first substrate W on which film formation has been completed, is moved to the receiving position PA by the moving unit 7A.

[0057] The transport unit 4 receives the fourth substrate W on the hand 44 and, as shown in Figure 20(B), hands the substrate W to the holding unit 6D at the receiving position PD. The holding unit 6D holds the substrate W from above. Concurrently, the evaporation source 8, which has completed film formation at the evaporation position JC, is moved toward the evaporation position JD, and the holding unit 6C, which holds the second substrate W that has completed film formation, is moved to the receiving position PC by the moving unit 7A. Furthermore, a film formation operation is performed on the third substrate W by the evaporation source 8 at the evaporation position JB.

[0058] When the holding unit 6A holding the first substrate W on which film formation has been completed returns to the moving unit 7A, the transport unit 4 receives the first substrate W from the holding unit 6A at the receiving position PA, as shown in Figure 20(C). In parallel, the holding unit 6D which has received the fourth substrate W is moved parallel to the deposition position JD by the moving unit 7B. The transport unit 4 transports the first substrate W on which film formation has been completed to the intermediate transport device 102, as shown in Figure 20(D). By repeating the above procedure, film formation is performed sequentially on a large number of substrates W.

[0059] According to the above-described film formation apparatus 1, the substrate W or mask M is transported from the intermediate transport device 101 to each of the deposition positions JA to JD by using the transport unit 4 in combination with the transport unit 5A or 5B. Compared to transport using a single transport mechanism, the substrate W can be transported over a longer distance while shortening the transport distance of each transport unit. When transporting a large substrate W, it is possible to prevent each transport unit from becoming larger due to increased rigidity while realizing a long transport distance. Therefore, it is possible to provide a film formation apparatus 1 that can accommodate larger substrates W.

[0060] Furthermore, different mechanisms are employed for the transport unit 4 and the transport units 5A and 5B. That is, by configuring the transport unit 4 as an articulated robot, it is possible to improve the degree of freedom in the position of the transport destination of the substrate W and the degree of freedom in the attitude (orientation) of the substrate W. Furthermore, by configuring the transport units 5A and 5B as a mechanism for moving the substrate W in parallel, it is possible to accommodate long transport distances.

[0061] The transfer of the substrate W from the transport unit 4 to the transport units 5A and 5B is performed by the holding part 62, which is an electrostatic chuck, so the substrate W can be transferred by attaching it from the transport unit 4 to the holding part 62. Compared to the method of replacing the substrate W, there is no need to place the substrate W, and the transfer time can be shortened, thereby improving productivity.

[0062] When the substrate W and mask M are transported from the delivery chamber 2 to the film formation chamber 3, their orientations are changed by 90 degrees by the transport unit 4 so that the longitudinal directions of the substrate W and mask M are oriented in the Y direction. This contributes to reducing the width of the film formation apparatus 1 in the X direction. Of course, a configuration in which the orientations of the substrate W and mask M are not changed can also be adopted. In this case, it contributes to reducing the width of the film formation apparatus 1 in the Y direction.

[0063] Second Embodiment In the first embodiment, the deposition source 8 is configured to be movable in both the X and Y directions, but it may be configured to be movable only in the X direction. Figures 21(A) to 21(C) show an example of this, illustrating the configuration at deposition positions JA and JB. A similar configuration can also be adopted at deposition positions JC and JD.

[0064] The deposition source 8', which replaces the deposition source 8, has a shape that is elongated in the Y direction, and the openings 8a' that release the deposition material have a length that corresponds to the length of the deposition positions JA and JB in the Y direction. The moving unit 9', which replaces the moving unit 9, has a pair of fixed rails 96. Each fixed rail 96 extends in the X direction, and the pair of fixed rails 96 are spaced apart from each other in the Y direction. The moving unit 9' has an actuator (not shown) that corresponds to the actuator 90.

[0065] As shown in Fig. 21(A), the deposition source 8' has a standby position between deposition positions JA and JB, and when forming a film on the substrate W at deposition position JA, it traverses deposition position JA in the X direction as shown in Fig. 21(B). When forming a film on the substrate W at deposition position JB, it traverses deposition position JB in the X direction as shown in Fig. 21(C). According to this embodiment, the mechanism of the moving unit 9' can be made relatively simple.

[0066] Third Embodiment In the first embodiment, the alignment between the substrate W and the mask M at the deposition positions JA to JD is performed by adjusting the magnetic force of the magnetic element 71, but a dedicated alignment device may also be provided. Figures 22(A) and 22(B) show an example. An alignment device 10 is disposed at each of the deposition positions JA to JD, and the illustrated example shows the alignment device 10 disposed at deposition position JA.

[0067] The alignment device 10 is an apparatus that receives the substrate W from the holding unit 6A, aligns the substrate W with the mask M, and overlays the substrate W on the mask M. The alignment device 10 has an arm member 11 with claws that hold the substrate W. The substrate W held by the holding unit 6A is released from the holding and placed on the arm member 11. The arm member 11 can be displaced in the X, Y, and θ directions by a drive unit 12, thereby adjusting the position of the substrate W placed on the arm member 11 in the X, Y, and θ directions. The drive unit 12 can be raised and lowered by a lifting unit 13.

[0068] The alignment device 10 also includes a plate unit 14 and an elevating unit 15 that raises and lowers the plate unit 14. The plate unit 14 is a plate for bringing the substrate W and the mask M into close contact with each other, and includes, for example, a magnet that attracts the iron mask M, and a cooler that cools the substrate W.

[0069] 22(A), during alignment, the camera 32 captures images of the alignment marks affixed to the substrate W and the mask M, respectively, and calculates the amount of misalignment between the substrate W and the mask M from the captured images. Then, the position of the substrate W is adjusted to reduce the calculated amount of misalignment. The position of the substrate W is adjusted by displacing the arm member 11 on which the substrate W is placed, with the drive unit 12, while the substrate W and the mask M are spaced apart from each other vertically.

[0070] The imaging by the camera 32 and the alignment of the substrate W and the mask M by adjusting the magnetic force of the magnetic element 71 may be repeated until the amount of misalignment between them falls within an allowable range. Once the alignment is complete, as shown in FIG. 22(B), the holding unit 6A retreats from the deposition position JA, and then the lifting unit 13 lowers the substrate W onto the mask M together with the drive unit 12 and the arm member 12 to overlap them, and further the lifting unit 15 lowers the plate unit 14 onto the substrate W to bring the substrate W and the mask M into close contact. In this state, film formation on the substrate W is performed.

[0071] When film formation is completed, the plate unit 14 is raised by the lifting unit 15. After the holding unit 6A is moved to the deposition position JA again, the lifting unit 13 raises the substrate W together with the drive unit 12 and the arm member 12, and the substrate W is transferred to the holding unit 6A.

[0072] <Fourth embodiment> It is also possible to transport the substrate W and mask M to the film formation chamber 3 using only the transport unit 4, without using the transport units 5A and 5B. Figures 23(A) to 23(D) show an example of this. In the illustrated example, corresponding holding units 6A and 6C are disposed at the deposition positions JA and JC. The holding units 6A and 6C are fixedly disposed and do not move. Each deposition position JA and JC is configured such that, from bottom to top, deposition sources 8, 8, mask tables 31, 31, and holding units 6A and 6C are disposed. The deposition source 8 may be fixed, but in this embodiment, it is movable as in the other embodiments. The mask M is placed in advance on the mask table 31.

[0073] As shown in FIG. 23(A), when the substrate W is transported from the intermediate transport device 101, the transport unit 4 receives the substrate W on the hand 44, and as shown in FIGS. 24(B) and 24(C), delivers the substrate W to the holding unit 6A at the deposition position JA. The deposition position JA also serves as the receiving position PA. The holding unit 6A holds the substrate W from above. The transfer of the substrate W is performed by the holding part 62, which is an electrostatic chuck. Therefore, the substrate W can be transferred by simply attaching it from the transport unit 4 to the holding part 62. Compared to the method of replacing the substrate W, there is no need to place the substrate W, and the transfer time can be shortened. This improves productivity. The alignment of the mask M and the substrate W can be performed by adjusting the position and orientation of the substrate W using the transport unit 4.

[0074] 23(D), the evaporation source 8 is moved in the Y direction to perform film formation on the substrate W held by the holding unit 6A. The film formation operation at the evaporation position JC is similar, and the substrate W can be transported and film formed in parallel at the evaporation positions JA and JC. After film formation is completed, the transport unit 4 receives the substrate W from the holding unit 6A or 6C and transports it to the intermediate transport device 102.

[0075] Fifth Embodiment In the first embodiment, the holder 62 that holds the substrate W is configured as an electrostatic chuck, but other suction methods may be used. Fig. 24 shows an example of such a method, illustrating the underside of the holder 62. A plurality of suction pads 65 are provided on the underside of the holder 62. The suction pads 65 are, for example, adhesive members that hold the substrate W by adhesive force. Alternatively, the suction pads 65 are vacuum pads.

[0076] Sixth Embodiment Next, an example of a method for manufacturing an electronic device will be described. Hereinafter, the configuration and manufacturing method of an organic EL display device will be illustrated as an example of the electronic device.

[0077] First, the organic EL display device to be manufactured will be described. Fig. 25(A) is an overall view of an organic EL display device 50, and Fig. 25(B) is a diagram showing the cross-sectional structure of one pixel.

[0078] 25(A), a plurality of pixels 52, each including a plurality of light-emitting elements, are arranged in a matrix in a display region 51 of an organic EL display device 50. As will be described in detail later, each of the light-emitting elements has a structure including an organic layer sandwiched between a pair of electrodes.

[0079] The term "pixel" as used herein refers to the smallest unit capable of displaying a desired color in the display region 51. In the case of a color organic EL display device, a pixel 52 is configured by a combination of multiple sub-pixels, each of which is a first light-emitting element 52R, a second light-emitting element 52G, and a third light-emitting element 52B, each of which emits light differently from one another. The pixel 52 is often configured by a combination of three types of sub-pixels: a red (R) light-emitting element, a green (G) light-emitting element, and a blue (B) light-emitting element, but is not limited to this. The pixel 52 may include at least one type of sub-pixel, preferably two or more types of sub-pixels, and more preferably three or more types of sub-pixels. The sub-pixels that make up the pixel 52 may be a combination of four types of sub-pixels: a red (R) light-emitting element, a green (G) light-emitting element, a blue (B) light-emitting element, and a yellow (Y) light-emitting element, for example.

[0080] Figure 25(B) is a partial cross-sectional schematic diagram taken along line AB in Figure 25(A). A pixel 52 has, on a substrate 53, multiple sub-pixels each composed of an organic EL element including a first electrode (anode) 54, a hole transport layer 55, one of a red layer 56R, a green layer 56G, and a blue layer 56B, an electron transport layer 57, and a second electrode (cathode) 58. Of these, the hole transport layer 55, the red layer 56R, the green layer 56G, the blue layer 56B, and the electron transport layer 57 correspond to organic layers. The red layer 56R, the green layer 56G, and the blue layer 56B are formed in patterns corresponding to light-emitting elements (sometimes referred to as organic EL elements) that emit red, green, and blue light, respectively.

[0081] 25B , the hole transport layer 55 may be formed as a common layer across the plurality of sub-pixel regions, and the red layer 56R, the green layer 56G, and the blue layer 56B may be formed separately for each sub-pixel region on the hole transport layer 55. The electron transport layer 57 and the second electrode 58 may be formed as a common layer across the plurality of sub-pixel regions on the hole transport layer 55. The electron transport layer 57 and the second electrode 58 may be formed as a common layer across the plurality of sub-pixel regions on the hole transport layer 55.

[0082] In order to prevent short circuits between adjacent first electrodes 54, an insulating layer 59 is provided between the first electrodes 54. Furthermore, since the organic EL layer deteriorates due to moisture and oxygen, a protective layer 60 is provided to protect the organic EL element from moisture and oxygen.

[0083] 25(B), the hole transport layer 55 and the electron transport layer 57 are shown as a single layer, but they may be formed of multiple layers including a hole blocking layer and an electron blocking layer depending on the structure of the organic EL display element. Furthermore, a hole injection layer having an energy band structure that can smoothly inject holes from the first electrode 54 to the hole transport layer 55 may be formed between the first electrode 54 and the hole transport layer 55. Similarly, an electron injection layer may be formed between the second electrode 58 and the electron transport layer 57.

[0084] Each of the red layer 56R, green layer 56G, and blue layer 56B may be formed of a single light-emitting layer or may be formed by laminating multiple layers. For example, the red layer 56R may be formed of two layers, with the upper layer being a red light-emitting layer and the lower layer being a hole-transporting layer or an electron-blocking layer. Alternatively, the lower layer may be a red light-emitting layer and the upper layer being an electron-transporting layer or a hole-blocking layer. By providing a layer below or above the light-emitting layer in this manner, the light-emitting position in the light-emitting layer can be adjusted, and the optical path length can be adjusted, thereby improving the color purity of the light-emitting element.

[0085] Although the example of the red layer 56R is shown here, a similar structure may be adopted for the green layer 56G or the blue layer 56B. The number of layers may be two or more. Furthermore, layers of different materials may be stacked, such as a light-emitting layer and an electron-blocking layer, or layers of the same material may be stacked, such as two or more light-emitting layers.

[0086] Next, an example of a method for manufacturing an organic EL display device will be specifically described. Here, it is assumed that the red layer 56R is made up of two layers, a lower layer 56R1 and an upper layer 56R2, and the green layer 56G and the blue layer 56B are made up of a single light-emitting layer.

[0087] First, a substrate 53 is prepared on which a circuit (not shown) for driving the organic EL display device and a first electrode 54 are formed. The material of the substrate 53 is not particularly limited, and it can be made of glass, plastic, metal, etc. In this embodiment, a substrate in which a polyimide film is laminated on a glass substrate is used as the substrate 53.

[0088] A resin layer such as acrylic or polyimide is coated by bar coating or spin coating on the substrate 53 on which the first electrode 54 is formed, and the resin layer is patterned by lithography so as to form an opening in the area where the first electrode 54 is formed, thereby forming an insulating layer 59. This opening corresponds to the light-emitting region where the light-emitting element actually emits light.

[0089] The substrate 53 with the patterned insulating layer 59 is carried into a first film-forming chamber, and a hole transport layer 55 is formed as a common layer on the first electrodes 54 in the display area. The hole transport layer 55 is formed using a mask in which openings are formed for each display area 51, which will ultimately become the panel portion of each organic EL display device.

[0090] Next, the substrate 53 on which the hole transport layer 55 has been formed is carried into a second film formation chamber. The substrate 53 and a mask are aligned, and the substrate is placed on the mask. A red layer 56R is then formed on the hole transport layer 55 in the portion of the substrate 53 where the red-emitting elements are to be disposed (the region where the red subpixels are to be formed). The mask used in the second film formation chamber is a high-resolution mask with openings formed only in the regions that will become the red subpixels among the regions on the substrate 53 that will become the subpixels of the organic EL display device. As a result, the red layer 56R including the red light-emitting layer is formed only in the regions that will become the red subpixels among the regions on the substrate 53 that will become the red subpixels. In other words, the red layer 56R is selectively formed in the regions that will become the red subpixels, but not in the regions that will become the blue or green subpixels among the regions on the substrate 53 that will become the subpixels.

[0091] Similar to the formation of the red layer 56R, the green layer 56G is formed in the third film formation chamber, and then the blue layer 56B is formed in the fourth film formation chamber. After the formation of the red layer 56R, green layer 56G, and blue layer 56B is completed, the electron transport layer 57 is formed over the entire display area 51 in the fifth film formation chamber. The electron transport layer 57 is formed as a layer common to the three color layers 56R, 56G, and 56B.

[0092] The substrate on which the layers up to the electron transport layer 57 have been formed is moved to a sixth film-forming chamber, where the second electrode 58 is formed. In this embodiment, each layer is formed by vacuum deposition in the first to sixth film-forming chambers. However, the present invention is not limited to this, and for example, the second electrode 58 in the sixth film-forming chamber may be formed by sputtering. Thereafter, the substrate on which the layers up to the second electrode 68 have been formed is moved to a sealing device, where the protective layer 60 is formed by plasma CVD (sealing step), thereby completing the organic EL display device 50. Note that although the protective layer 60 is formed by the CVD method here, the method is not limited thereto, and it may also be formed by the ALD method or the inkjet method.

[0093] Here, the films are formed in the first to sixth film formation chambers using masks having openings corresponding to the patterns of the respective layers to be formed. When forming the films, the relative positions of the substrate 53 and the masks are adjusted (aligned), and then the substrate 53 is placed on the mask and film formation is performed.

[0094] Seventh Embodiment Next, a film thickness measurement device for measuring the film thickness of a substrate on which a film has been formed will be described. In this embodiment, a film thickness measurement device for measuring the film thickness based on the reflectance of light on the substrate surface using an optical sensor will be described as an example.

[0095] 26 shows measurement positions MAA to MDC where the film thickness measurement device 120 can be arranged in the film formation apparatus. Measurement positions MAA, MBA, MCA, and MDA are between the receiving positions PA to PD and the deposition positions JA to JD and are positions within the delivery chamber 2, i.e., outside the film formation chamber 3, where the film thickness of the substrate 53 transported by the transport units 5A and 5B is measured. Measurement positions MAB, MBB, MCB, and MDB are between the receiving positions PA to PD and the deposition positions JA to JD and are positions within the film formation chamber 3 where the film thickness of the substrate transported by the transport units 5A and 5B is measured. Measurement positions MAC, MBC, MCC, and MDC are positions where the film thickness of the substrate located at the deposition positions JA to JJD in the film formation chamber 3 is measured. Note that it is sufficient to arrange the film thickness measurement device 120 at at least one of the measurement positions MAA to MDC between the receiving positions PA to PD and the deposition positions JA to JD; it is not necessary to arrange the film thickness measurement device 120 at all measurement positions.

[0096] Fig. 27 is a cross-sectional view of the film formation apparatus in the YZ plane. As shown in Fig. 27, measurement positions MAA to MDC where film thickness measurement device 120 can be placed are all located below substrate 53 in the vertical direction (Z direction). This allows film thickness measurement device 120 to measure the film thickness of substrate 53 while it is being transported by transport units 5A and 5B.

[0097] In this way, the film thickness of the substrate W is measured while the substrate W is adsorbed by the ESC, so that it is possible to perform thin film measurement while improving measurement accuracy and without requiring additional large equipment such as a thin film measurement chamber. In addition, since the film thickness measurement is performed during transportation, it is possible to perform film thickness measurement quickly after film formation.

[0098] 28(A) to 28(C) are explanatory diagrams illustrating the measurement principle using an example in which film thickness measurement device 120 is placed at measurement position MAA.

[0099] 28(A) is a diagram showing a case where a laser beam is emitted from the film thickness measuring device 120 and the intensity of the reflected light is measured before the substrate is carried into the film formation chamber 3. Here, the received light intensity of the received laser beam is P BG By measuring the intensity of the received light, it is possible to identify the magnitude of noise (background noise) caused by the temperature characteristics of the light receiving sensor, as well as light leakage between fibers inside the measuring instrument, which will be described later.

[0100] Next, FIG. 28(B) shows the reference substrate W REF 28(B) is a diagram showing a case where a laser beam is emitted by the film thickness measuring device 120 when the substrate is carried into the film forming chamber 3, and the intensity of the reflected light is measured as a reference. ref Known substrate W REF Here, the irradiation intensity of the transmitted laser light is P Tref The received laser light intensity is P Rref Then, the following formula (1) holds. R ref =(P Rref -P BG ) / (P Tref -P BG ) (1) As described above, the reflectance R and the received light intensity P in FIG. BG , the received light intensity P in FIG. Rref can be obtained, and the irradiation intensity P of the laser light can be calculated based on the above formula. Tref This allows the correspondence between the reflectance and the intensity of received light to be determined.

[0101] 28(C) is a diagram showing the case where the laser light is emitted by the film thickness measuring device 120 and the intensity of the reflected light is measured when the substrate W is unloaded from the film formation chamber 3 after the film has been formed in the film formation chamber 3. In FIG. 28(C), the irradiation intensity P Tref The received laser beam intensity P R Based on this, the reflectance R of the substrate W on which the film has been formed can be determined by the following equation (2). R=(P R -P BG ) / (P Tref -P BG ) (2) This allows changes in reflectance to be identified.

[0102] The background noise measurement and reference measurement as shown in Figures 28(A) and 28(B) may be performed for each substrate, or may be performed after film formation on a predetermined number of substrates, or after a predetermined time has elapsed.

[0103] FIG. 30 shows an example of the reflectance measurement results for each film thickness. As shown in FIG. 30, compared to the reflectance of the substrate when the film thickness is 40 angstroms (Å), when the film thickness is 1600 Å, the reflectance is higher at wavelengths around 280 and 330 to 420 nm. Therefore, by measuring the reflectance in this wavelength band, the film thickness can be estimated. Known techniques can be used to estimate the film thickness based on the reflectance. For example, the reflectance can be measured in advance for multiple film thicknesses, and the measured reflectance can be used to estimate which measurement result is closest.

[0104] Furthermore, the thickness may be estimated based on reflectance measurements at multiple frequency bands. For example, if the estimated thicknesses based on reflectance measurements at wavelengths of 280 nm and 330 nm are 1000 Å and 1200 Å, respectively, the average of the estimated thicknesses may be taken to be 1100 Å.

[0105] <<Configuration example of film thickness measurement device>> (Configuration example 1) 29(A) shows one configuration example of film thickness measurement apparatus 120. Film thickness measurement apparatus 120 according to configuration example 1 includes a light source 2901, a vacuum flange 2902, a light projecting and receiving unit 2903, a spectroscope 2904, and a PC 2905. Light source 2901, vacuum flange 2902, light projecting and receiving unit 2903, and spectroscope 2904 are connected by optical fibers.

[0106] Light source 2901 is a light-emitting device that can switch between light output and non-output by operating shutter 29011. In one example, light source 2901 includes a deuterium (D2) halogen light source 29012 that emits continuous light of halogen and deuterium from one emission port. In another example, light source 2901 includes a laser-driven light source.

[0107] The vacuum flange 2902 is disposed at the connection between the vacuum environment and the atmospheric environment. For example, the light source 2901, the spectroscope 2904, and the PC 2905 are disposed in a housing maintained in the atmospheric environment, and the light projecting and receiving unit 2903 is disposed in a film formation chamber outside the housing that may be kept in a vacuum state, and optical fibers connecting the light projecting and receiving unit 2903 to the light source 2901 and the spectroscope 2904 connect the inside and outside of the housing via the vacuum flange 2902. In another example, the light projecting and receiving unit 2903 may be disposed inside the film formation chamber 3 or the delivery chamber 2, and the light source 2901, the spectroscope 2904, and the PC 2905 may be disposed outside the film formation chamber 3 or the delivery chamber 2. In this case, the vacuum flange 2902 may be provided on the wall surface of the film formation chamber 3 or the delivery chamber 2.

[0108] 27, the light projecting and receiving unit 2903 includes a light projecting unit for projecting light emitted from the light source 2901 vertically upward, and a light receiving unit for receiving reflected light and sending it to the spectroscope 2904. The spectroscope 2904 has a light input port, and splits the input light into two wavelength bands to measure the light intensity for each wavelength band. Then, the spectroscope 2904 transmits information about the measured light intensity to the PC 2905.

[0109] The PC 2905 calculates the measured film thickness using the above formulas (1) and (2) based on the light intensity measured by the spectrometer 2904. In addition, in one example, the PC 2905 can use the measured film thickness to adjust the time taken for the film formation process of the film formation apparatus 1, adjust the amount of deposition material released from the deposition source 8 of the film formation apparatus 1, adjust parameters of the subsequent film formation process, etc.

[0110] (Configuration example 2) 29(B) shows a second configuration example of film thickness measurement apparatus 120. Film thickness measurement apparatus 120 according to the second configuration example includes a light source 2921, vacuum flanges 2922a and 2922b (hereinafter, sometimes referred to simply as vacuum flange 2922), light projecting and receiving units 2923a and 2923b (hereinafter, sometimes referred to simply as light projecting and receiving unit 2923), a spectroscope 2924, a PC 2925, a fiber switch 2926, and a joint 2927. Light source 2921, vacuum flange 2922, light projecting and receiving unit 2923, spectroscope 2924, fiber switch 2926, and joint 2927 are connected by optical fibers.

[0111] The light source 2921, vacuum flange 2922, light projecting and receiving unit 2923, spectroscope 2924, and PC 2925 are similar to the light source 2901, vacuum flange 2902, light projecting and receiving unit 2903, spectroscope 2904, and PC 2905 described in the first embodiment, and therefore the description thereof will be omitted.

[0112] The joint 2927 connects the light source 2921 to a branching fiber for branching the light output from the light source 2921 to a plurality of input ports of the fiber switcher 2926 .

[0113] The fiber switch 2926 switches between output and non-output of light input from the branching fiber, and transmits the light from one of the output ports. In this embodiment, the fiber switch 2926 is described as having three inputs and three outputs; however, the number of input and output port pairs is not limited as long as multiple pairs of input and output ports are provided. In this embodiment, the light output from the first output port (referred to as port 1) is input to the light projector / receiver 2923a, the light output from the second output port (referred to as port 2) is input to the light projector / receiver 2923b, and the light output from the third output port (referred to as port 3) is input directly to the spectrometer. This allows film thickness measurements of multiple transfer lines to be performed by arranging the light projector / receiver 2923a and 2923b at different measurement positions MAA to MDD. Furthermore, arranging the light projector / receiver 2923a and 2923b at different locations within a single measurement position can improve the measurement accuracy of the film thickness of a single transfer line. Furthermore, changes in the intensity of the light output from the light source 2921 can be detected by port 3.

[0114] (Configuration example 3) 29(C) shows a third configuration example of the film thickness measurement apparatus 120. The film thickness measurement apparatus 120 according to the third configuration example includes light sources 2941a and 2941b (hereinafter, sometimes referred to simply as light source 2941), vacuum flanges 2942a and 2942b (hereinafter, sometimes referred to simply as vacuum flange 2942), light projecting and receiving units 2943a and 2943b (hereinafter, sometimes referred to simply as light projecting and receiving unit 2943), a spectroscope 2944, and a PC 2945. The light source 2941, the vacuum flange 2942, the light projecting and receiving unit 2943, and the spectroscope 2944 are connected by optical fibers.

[0115] The light source 2941, vacuum flange 2942, light projecting and receiving unit 2943, spectroscope 2944, and PC 2945 are similar to the light source 2901, vacuum flange 2902, light projecting and receiving unit 2903, spectroscope 2904, and PC 2905 described in the first embodiment, and therefore the description thereof will be omitted.

[0116] According to the third configuration example, it is not necessary to prepare a spectrometer and a PC for each measurement position.

[0117] <<Tapered parts>> As shown in FIG. 27 , at the positions MAA to MDC where the film thickness measurement device 120 is installed, the measurement light emitted from the film thickness measurement device 120 may be reflected by the ceiling of the delivery chamber 2 or the deposition chamber 3 and be input to the light projecting / receiving unit, resulting in a decrease in measurement accuracy. For this reason, a tapered member 3101 is installed in the direction of light irradiation from the film thickness measurement device 120, i.e., the ceiling of the delivery chamber 2 in the example of FIG. 31 . For example, the tapered member 3101 has a triangular prism, pyramid, or cone shape. This allows the measurement light to be reflected in a direction different from that of the film thickness measurement device 120. In one example, the tapered member 3101 is a black member with high light absorption. In another example, the surface onto which the measurement light from the film thickness measurement device 120 is irradiated is subjected to a surface treatment such as sandblasting to promote light diffusion.

[0118] By arranging the tapered member 3101 in this manner, it is possible to prevent the measurement light emitted from the film thickness measuring device 120 from being reflected at a location other than the substrate W, thereby preventing a decrease in the film thickness measurement accuracy.

[0119] <<Configuration example of substrate and holding unit>> 32, measurement film deposition areas 3201a-3201c (hereinafter, sometimes referred to as film deposition areas 3201 without distinction) are arranged on the substrate at locations where measurements are performed by the film thickness measurement device 120. In FIG. 32, three film deposition areas 3201a-3201c are illustrated as being arranged to perform measurements at three locations on the substrate W, but the film deposition areas for measuring film thickness may be determined according to the number of measurement locations, or one film deposition area may be arranged to measure film thicknesses at multiple locations. For example, one slot-shaped film deposition area including the film deposition areas 3201a-3201c may be arranged.

[0120] In one example, the deposition area 3201 is arranged in an area different from an area where electronic devices are actually manufactured on the substrate W. For example, the deposition area is arranged near the edge of the substrate W so that common positions can be measured for multiple types of substrates on which different electronic devices are manufactured.

[0121] Furthermore, when film thickness measurement is performed while the substrate W is being transported by the holding unit 6, such as at measurement positions MAA and MAB, the measurement accuracy of the film thickness may be reduced by the measurement light from the film thickness measurement device being reflected by the holding unit 6. For this reason, an opening is also provided in the holding unit 6 at a position corresponding to the film formation area 3201, for example, at a position vertically above the film formation area 3201. This prevents the measurement light irradiated from the film thickness measurement device 120 from being reflected by the holding unit 6 that holds the substrate, and the reflected light from being incident on the light receiving unit of the film thickness measurement device 120, which causes measurement noise.

[0122] Also, an opening is arranged in the mask M so that film formation is performed in the measurement film formation area 3201. Therefore, at a position where film thickness measurement is performed at the film formation position, such as measurement position MAC in FIG. 27 , film thickness measurement is performed with the mask M positioned on the substrate W.

[0123] <<Joint structure>> 33(A) to 33(C) are explanatory diagrams showing joint structures used to connect fibers that transmit light in the film thickness measurement device 120, such as the joint 2927 in FIG. 29(B).

[0124] 33(A) is a perspective view of the joint structure. Fiber connection is performed by inserting a plug 3302 into a connector 3301. The connector 3301 is formed by fixing one bare wire 3311 on the light output side with a cable mount 3312, connecting the cable mount 3312 to an adapter 3313, and connecting the adapter 3313 to a cylindrical member 3314.

[0125] The plug 3302 has a structure in which multiple input side wires 3321 are bundled together and the bundled wires are all wrapped in resin. The resin is protected by a stainless steel cylindrical member 3322. The bundled wires are assigned according to the number of branches, so that the fiber used to connect the joint 2927 and the fiber switch 2926 can be branched.

[0126] Figure 33(B) shows a cross-sectional view of the joint. The wire 3311 includes a cladding, a core, and a coating. The length L1 of the cable mounter 3312 when inserted into the adapter 3313 is determined in advance according to a predetermined standard. The tip of the cable mounter 3312 and the wire 3311 are fixed so as to be aligned. The margin length L2 on the adapter 3313 side when the cable mounter 3312 is inserted into the adapter 3313 is also determined in advance according to a predetermined standard.

[0127] As shown in FIG. 33B, when light is emitted from the bare wire 3311, the light is emitted from the tip of the bare wire 3311 at a predetermined emission angle. In one example, the emission angle is 11 to 13 degrees, with the emission direction being 0 degrees. Therefore, when the tip of the plug 3302 is located at position 3341, light is incident on the bare wire near the center of the plug 3302, but light is not incident on the bare wire located on the outer periphery of the plug 3302. On the other hand, when the tip of the plug 3302 is located at position 3343, light is incident on the entire bare wire, but the light also hits the stainless steel cylindrical member of the plug 3302, reducing the intensity of the light incident on the bare wire. Therefore, by positioning the tip of the plug 3302 at position 3342, light is incident on the entire bare wire and does not irradiate anything other than the bare wire, and light loss that occurs during fiber splicing can be reduced.

[0128] For this reason, in the joint 2927 shown in this embodiment, as shown in FIG. 33(C), a spacer 3361 is disposed inside a cylindrical member against which the tip of the inserted plug 3302 abuts. In FIG. 33(C), the spacer 3361 is shown as a cylindrical member, but it may also be made of cylindrical glass. In this case, the thickness of the spacer 3361 may be determined taking into account the refraction of light at the incident surface. In this way, in the joint structure according to this embodiment, the spacer 3361 is disposed to maintain a constant distance between the strand on the output side and the multiple strands on the input side.

[0129] Furthermore, the incident surface of spacer 3361 on the side of wire 3311 may be made convex so as to obtain a lens effect by spacer 3361. This allows light to be incident perpendicularly to the cross section of the tip of plug 3302.

[0130] <Other embodiments> The present invention can also be realized by supplying a program that realizes one or more functions of the above-described embodiments to a system or device via a network or a storage medium, and having one or more processors in the computer of the system or device read and execute the program. It can also be realized by a circuit (e.g., ASIC) that realizes one or more functions.

[0131] The invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention. [Explanation of symbols]

[0132] 1 film formation apparatus, 3 film formation chamber, 4 transfer unit, 5A and 5B transfer units, 6A to 6D holding units, 7A and 7B moving units

Claims

1. A film forming apparatus, a film formation chamber provided with a film formation unit for forming a film on a substrate; a transfer robot that transfers the substrate to a receiving position while holding the substrate on an upper side of a hand; a transport means for transporting the substrate by moving the substrate in a direction parallel to a holding surface of the substrate between a receiving position of the substrate and a film forming position of the substrate while holding the substrate on a lower side; a measuring means for measuring a thickness of a film formed on the substrate held by the transporting means while the transporting means transports the substrate on which a film has been formed by the film forming unit from the film forming position to the receiving position; A film forming apparatus comprising:

2. 2. The film deposition apparatus according to claim 1, wherein the measuring means measures the film thickness at a plurality of locations on the substrate by moving the transporting means holding the substrate.

3. The conveying means a holding unit for holding the substrate; a moving unit that moves the substrate held by the holding unit; Equipped with 3. The film forming apparatus according to claim 1 or 2.

4. The film forming apparatus described in Claim 3, characterized in that the holding unit includes an electrostatic chuck that adsorbs the substrate by electrostatic force.

5. A film forming apparatus as described in claim 3 or claim 4, characterized in that the moving unit comprises a guide member extending in the direction parallel to the substrate holding surface of the holding unit to determine the moving trajectory of the holding unit in the direction parallel to the substrate holding surface of the holding unit, and a moving mechanism for moving the holding unit in the direction.

6. Further comprising a plurality of receiving locations; 6. The film forming apparatus according to claim 1, wherein the transfer robot transfers the substrate to the plurality of receiving positions.

7. the deposition chamber includes a plurality of deposition positions; the film formation apparatus includes a plurality of the transport means for transporting substrates to the plurality of film formation positions, 7. The film forming apparatus according to claim 6, wherein the transfer robot transfers the substrate to a plurality of receiving positions corresponding to the transfer means.

8. 8. The film deposition apparatus according to claim 1, wherein the measuring means measures the thickness of the film formed on the substrate at the film deposition position.

9. 8. The film forming apparatus according to claim 1, wherein the measuring means measures the thickness of the film formed on the substrate at a position within the film forming chamber between the film forming position and the receiving position.

10. 8. The film forming apparatus according to claim 1, wherein the measuring means measures the thickness of the film formed on the substrate at a position outside the film forming chamber, between the film forming position and the receiving position.

11. 11. The film forming apparatus according to claim 1, wherein the measuring means measures the thickness of the film by irradiating the substrate with a laser beam.

12. 12. The film deposition apparatus according to claim 7, wherein the measuring means comprises a light source whose output is branched so as to irradiate the substrate with a laser beam for each of the plurality of conveying means.

13. The film forming apparatus according to claim 12, further comprising a joint structure for inputting light output from one output side wire to a plurality of input side wires in order to branch the output from the light source.

14. 14. The film deposition apparatus according to claim 13, wherein the joint structure includes a spacer that keeps a constant distance between the one output wire and the plurality of input wires.

15. 15. The film deposition apparatus according to claim 12, wherein the branched output from the light source is input to a measuring device for measuring intensity.

16. 14. The film forming apparatus according to claim 11, further comprising black members arranged to sandwich the transport means together with the laser light projector in the irradiation direction of the laser light.

17. The film formation apparatus includes a delivery chamber for delivering and receiving substrates, and a plurality of the film formation chambers arranged adjacent to the delivery chamber; 17. The film forming apparatus according to claim 1, wherein the transfer chamber is provided with the transfer robot.

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