Substrate Processing Equipment

Abstract

To provide a substrate processor in which a gas flow passage is designed more freely.SOLUTION: The substrate processor includes: a processing chamber; a substrate processing unit located in the processing chamber and holding a substrate; and a shower head facing the substrate supporting unit. The shower head includes: a shower plate in which a gas flow passage for discharging gas is formed; and a cooling plate for holding and cooling the shower plate. The cooling plate includes: a first plate having a gas distribution layer for distributing gas; and a second plate having a refrigerant flow passage for being supplied with a refrigerant and a gas diffusion space for being supplied with gas distributed by the gas distribution layer; and a fastening member for fastening the first plate and the second plate.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present disclosure relates to a substrate processing apparatus. [Background technology]

[0002] Patent document 1 discloses a gas distribution plate assembly that includes a base plate including a metal matrix composite and a perforated face plate including a silicon disk bonded to the base plate by an adhesive layer.

[0003] Patent Document 2 discloses a showerhead assembly for supplying gas, which includes an electrode plate and a ceramic base supporting the electrode plate, wherein the ceramic base includes a first gas diffusion space formed toward the center of the base, a second gas diffusion space formed toward the periphery of the base, a first heater electrode layer provided above the first gas diffusion space, a second heater electrode layer provided above the second gas diffusion space, a first coolant flow path formed above the first gas diffusion space and above or below the first heater electrode layer, a second coolant flow path formed above the second gas diffusion space and above or below the second heater electrode layer, a first gas supply path for supplying gas via the first gas diffusion space, and a second gas supply path for supplying gas via the second gas diffusion space, and the showerhead assembly is fabricated so that there are no bonding surfaces inside the base. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Special Publication No. 2019-523995 [Patent Document 2] Japanese Patent Application Laid-Open No. 2015-95551 Summary of the Invention [Problem to be solved by the invention]

[0005] In one aspect, the present disclosure provides a substrate processing apparatus that improves the degree of freedom in designing a gas flow path. [Means for solving the problem]

[0006] In order to solve the above problem, according to one aspect, there is provided a substrate processing apparatus including: a processing chamber; a substrate support part provided in the processing chamber and configured to hold a substrate; and a shower head facing the substrate support part, wherein the shower head has a shower plate having gas flow paths formed therein for discharging gas; and a cooling plate for holding and cooling the shower plate, wherein the cooling plate has a first plate having a gas distribution layer for distributing gas; and a second plate having a coolant flow path through which a coolant is supplied and a gas diffusion space to which the gas distributed by the gas distribution layer is supplied; and a fastening member for fastening the first plate and the second plate together. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a diagram illustrating an example of the configuration of a capacitively coupled substrate processing apparatus. [Figure 2] FIG. 2 is a cross-sectional view illustrating an example of a configuration of a cooling plate according to the embodiment. [Figure 3] FIG. 2 is an example of an exploded cross-sectional view of a cooling plate according to the embodiment. [Figure 4] FIG. 10 is an example of a top view illustrating the configuration of a uniform gas distribution layer. [Figure 5] FIG. 10 is a bottom view illustrating the configuration of a uniform gas distribution layer. [Figure 6] FIG. 4 is an example of a top view illustrating the configuration of a flow path forming layer. [Figure 7] FIG. 10 is a bottom view illustrating an example of the configuration of a flow path forming layer. [Figure 8] FIG. 10 is another example of a top view illustrating the configuration of the uniform gas distribution layer. [Figure 9] FIG. 10 is another example of a bottom view illustrating the configuration of the uniform gas distribution layer. [Figure 10]10A and 10B are cross-sectional views illustrating a structure of a cooling plate according to a reference example. [Figure 11] 10A and 10B are diagrams comparing a cooling plate according to this embodiment with a cooling plate according to a reference example. DETAILED DESCRIPTION OF THE INVENTION

[0008] Various exemplary embodiments will be described in detail below with reference to the drawings, in which the same or equivalent parts are designated by the same reference numerals.

[0009] An example of the configuration of a plasma processing system will be described below: Fig. 1 is an example of a diagram for explaining an example of the configuration of a capacitively coupled substrate processing apparatus.

[0010] The plasma processing system includes a capacitively coupled substrate processing apparatus 1 and a controller 2. The capacitively coupled substrate processing apparatus 1 includes a plasma processing chamber 10, a gas supply 20, a power supply 30, and an exhaust system 40. The substrate processing apparatus 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one process gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 has at least one gas inlet for supplying at least one processing gas to the plasma processing space 10s and at least one gas outlet for exhausting gas from the plasma processing space 10s. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0011] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.

[0012] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that the annular region 111b may also be provided by another member surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. Furthermore, at least one RF / DC electrode coupled to an RF (Radio Frequency) power supply 31 and / or a DC (Direct Current) power supply 32 (described later) may be disposed within the ceramic member 1111a. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal (described later) is supplied to the at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. Note that the conductive member of the base 1110 and the at least one RF / DC electrode may function as multiple lower electrodes. Alternatively, the electrostatic electrode 1111b may function as the lower electrode. Therefore, the substrate support 11 includes at least one lower electrode.

[0013] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0014] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow passage 1110a, or a combination thereof. A heat transfer fluid such as brine or a gas flows through the flow passage 1110a. In one embodiment, the flow passage 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. The substrate support 11 may also include a heat transfer gas supply configured to supply a heat transfer gas to a gap between the backside of the substrate W and the central region 111a.

[0015] The shower head 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The shower head 13 has at least one gas supply port 13a (13a1 to 13a3), at least one gas diffusion chamber 13b (13b1 to 13b3), and multiple gas inlets 13c (13c1 to 13c3). The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c.

[0016] 1 includes a gas inlet portion 51, a gas inlet portion 52, and a gas inlet portion 53. The gas inlet portion 51 introduces gas into a central region (center region) of the substrate W in the plasma processing chamber 10. The gas inlet portion 52 introduces gas into a region (intermediate region) outside the gas inlet portion 51. The gas inlet portion 53 introduces gas into a region (edge region) outside the gas inlet portion 52. The gas inlet portion 51, the gas inlet portion 52, and the gas inlet portion 53 are concentrically arranged.

[0017] The gas diffusion chamber 13b includes a gas diffusion chamber 13b1, a gas diffusion chamber 13b2, and a gas diffusion chamber 13b3.

[0018] Gas diffusion chamber 13b1 is connected to gas supply port 13a1 and multiple gas inlets 13c1 so that gas can flow through them. Gas introduction section 51 has gas supply port 13a1, gas diffusion chamber 13b1, and multiple gas inlets 13c1. Gas diffusion chamber 13b2 is connected to gas supply port 13a2 and multiple gas inlets 13c2 so that gas can flow through them. Gas introduction section 52 has gas supply port 13a2, gas diffusion chamber 13b2, and multiple gas inlets 13c2. Gas diffusion chamber 13b3 is connected to gas supply port 13a3 and multiple gas inlets 13c3 so that gas can flow through them. Gas introduction section 53 has gas supply port 13a3, gas diffusion chamber 13b3, and multiple gas inlets 13c3.

[0019] The shower head 13 also includes at least one upper electrode. In addition to the shower head 13, the gas introduction part may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the side wall 10a.

[0020] The shower head 13 also has a cooling plate 131 and a shower plate 132. The cooling plate 131 is made of, for example, aluminum, and holds the shower plate 132. The cooling plate 131 also has a function of cooling the held shower plate 132. The cooling plate 131 also has a gas diffusion chamber 13b formed therein. The shower plate 132 is made of, for example, Si, SiC, or the like, and has a gas inlet 13c formed therein.

[0021] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the showerhead 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include one or more flow modulation devices to modulate or pulse the flow rate of the at least one process gas.

[0022] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates a plasma from at least one process gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of a plasma generating unit configured to generate a plasma from one or more process gases in the plasma processing chamber 10. In addition, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, thereby attracting ion components in the formed plasma to the substrate W.

[0023] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0024] The second RF generating unit 31b is coupled to at least one lower electrode via at least one impedance matching circuit and configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generating unit 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0025] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to at least one lower electrode and configured to generate a first DC signal. The generated first bias DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 32b is connected to at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0026] In various embodiments, at least one of the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof pulse waveform. In one embodiment, a waveform generator for generating a sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode. Thus, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have either positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one period. The first and second DC generating units 32a and 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided instead of the second RF generating unit 31b.

[0027] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve regulates the pressure in the plasma processing space 10s. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0028] The control unit 2 processes computer-executable instructions that cause the substrate processing apparatus 1 to perform various processes described in this disclosure. The control unit 2 may be configured to control each element of the substrate processing apparatus 1 to perform various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the substrate processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 may be implemented by, for example, a computer 2a. The processing unit 2a1 may be configured to read a program from the storage unit 2a2 and execute the read program to perform various control operations. The program may be stored in the storage unit 2a2 in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 by the processing unit 2a1 for execution. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a random access memory (RAM), a read only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the substrate processing apparatus 1 via a communication line such as a local area network (LAN).

[0029] Next, the cooling plate 131 according to this embodiment will be further described with reference to FIGS. 2 to 7. FIG. 2 is an example of a cross-sectional view illustrating the configuration of the cooling plate 131 according to this embodiment. FIG. 3 is an example of an exploded cross-sectional view of the cooling plate 131 according to this embodiment. FIG. 4 is an example of a top view illustrating the configuration of the uniform gas distribution layer (gas distribution layer) 212. FIG. 5 is an example of a bottom view illustrating the configuration of the uniform gas distribution layer 212. Note that in FIG. 4, positions corresponding to the gas flow paths 311, 321, and 331 are indicated by dashed lines, and in FIG. 5, positions corresponding to the gas flow paths 319, 329, and 339 are indicated by dashed lines. FIG. 6 is an example of a top view illustrating the configuration of the flow path forming layer 222 as viewed in the direction A (see FIG. 3). FIG. 7 is an example of a bottom view illustrating the configuration of the flow path forming layer 222 as viewed in the direction B (see FIG. 3). Note that in FIGS. 4 to 7, the orthogonal horizontal directions are indicated as the X and Y directions, respectively, and the height direction is indicated as the Z direction.

[0030] The cooling plate 131 has a first plate 210 in which the gas distribution channels 300 are formed, and a second plate 220 in which the gas diffusion channels 400 and the refrigerant channels 500 are formed. The first plate 210 and the second plate 220 are joined with bolts 230.

[0031] The first plate 210 has a connection IF (interface) layer 211, a uniform gas distribution layer 212, and a first intermediate IF (interface) layer 213. The first plate 210 is formed by diffusion bonding, brazing, or the like of the plate-shaped connection IF layer 211, the uniform gas distribution layer 212, and the first intermediate IF layer 213. The first plate 210 is formed of, for example, aluminum, SUS (stainless steel), or the like.

[0032] The connection IF layer 211 receives gas supply from the gas supply unit 20. That is, the connection IF layer 211 has a gas flow path 311 connected to the gas supply port 13a1 (see FIG. 1). The connection IF layer 211 also has a gas flow path 321 connected to the gas supply port 13a2 (see FIG. 1). The connection IF layer 211 also has a gas flow path 331 connected to the gas supply port 13a3 (see FIG. 1). The gas flow paths 311, 321, and 331 are flow paths that penetrate the connection IF layer 211 in the plate thickness direction.

[0033] The uniform gas distribution layer 212 distributes the gas supplied from the connecting IF layer 211. That is, the uniform gas distribution layer 212 has distribution channels 312 that distribute the gas supplied from the gas channels 311 provided in the connecting IF layer 211 to multiple gas channels 319 provided in the first intermediate IF layer 213. The distribution channels 312 have through channels 313, communication channels 314, through channels 315, distribution channels 316, and through channels 317 (see FIGS. 4 and 5 ). The through channels 313 are channels that penetrate the uniform gas distribution layer 212 in the thickness direction and connect the gas channels 311 of the connecting IF layer 211 to the communication channels 314. The communication channels 314 are channels formed by grooves formed on the lower surface of the uniform gas distribution layer 212 and the upper surface of the first intermediate IF layer 213 and connect the through channels 313 and the through channels 315. The through-flow passage 315 is a passage that penetrates the uniform gas distribution layer 212 in the thickness direction and connects the communication passage 314 and the distribution passage 316. The distribution passage 316 is a passage formed by a groove formed on the upper surface of the uniform gas distribution layer 212 and the lower surface of the connecting IF layer 211 and connects the through-flow passage 315 and the through-flow passage 317. The distribution passage 316 branches into multiple passages (four in the example shown in FIGS. 4 and 5 ) from the through-flow passage 315 toward the multiple through-flow passages 317. The distribution passages 316 are formed so that the passage lengths from the through-flow passage 315 to each through-flow passage 317 are equal to each other. The through-flow passage 317 is a passage that penetrates the uniform gas distribution layer 212 in the thickness direction and connects the distribution passage 316 and the gas passage 319 of the first intermediate IF layer 213.

[0034] The uniform gas distribution layer 212 also has distribution channels 322 that distribute gas supplied from the gas channels 321 provided in the connecting IF layer 211 to multiple gas channels 329 provided in the first intermediate IF layer 213 (see FIGS. 4 and 5 ). The distribution channels 322 have through channels 323 and distribution channels 324. The through channels 323 are channels that penetrate the uniform gas distribution layer 212 in the plate thickness direction, and connect the gas channels 321 in the connecting IF layer 211 to the distribution channels 324. The distribution channels 324 are channels formed by grooves formed on the lower surface of the uniform gas distribution layer 212 and the upper surface of the first intermediate IF layer 213, and connect the through channels 323 to the gas channels 329 in the first intermediate IF layer 213. The distribution channels 324 branch into multiple channels (four in the example shown in FIGS. 4 and 5 ) from the through channels 323 toward the multiple gas channels 329. The distribution flow paths 324 are formed so that the flow path lengths from the through flow path 323 to the respective gas flow paths 329 are equal to each other.

[0035] The uniform gas distribution layer 212 also has distribution channels 332 that distribute gas supplied from the gas channels 331 provided in the connecting IF layer 211 to multiple gas channels 339 provided in the first intermediate IF layer 213 (see FIGS. 4 and 5 ). The distribution channels 332 include through channels 333 and distribution channels 334. The through channels 333 are channels that penetrate the uniform gas distribution layer 212 in the thickness direction and connect the gas channels 331 and 334 of the connecting IF layer 211. The distribution channels 334 are channels formed by grooves formed on the lower surface of the uniform gas distribution layer 212 and the upper surface of the first intermediate IF layer 213 and connect the through channels 333 and the gas channels 339 of the first intermediate IF layer 213. The distribution channels 334 branch into multiple channels (four in the example shown in FIGS. 4 and 5 ) from the through channels 333 toward the multiple gas channels 339. The distribution flow paths 334 are formed so that the flow path lengths from the through flow path 333 to the respective gas flow paths 339 are equal to each other.

[0036] In this way, the uniform gas distribution layer 212, in which the distribution channels 312, 322, and 332 that distribute gas supplied from the gas channels 311, 321, and 331 provided in the connecting IF layer 211 to the plurality of gas channels 319, 329, and 339 provided in the first intermediate IF layer 213 are formed, has a multi-layer structure. That is, as shown in Figures 4 and 5, the uniform gas distribution layer 212 has a two-layer structure including an upper-surface gas channel formed on the upper surface side of the uniform gas distribution layer 212, a lower-surface gas channel formed on the lower surface side of the uniform gas distribution layer 212, and a through-gas channel penetrating the upper surface side (upper-surface gas channel) and the lower surface side (lower-surface gas channel) of the uniform gas distribution layer 212. In the example shown in Figures 4 and 5, the distribution channel 312 includes a distribution channel 316 as an upper-surface gas channel, a communication channel 314 as a lower-surface gas channel, and through-channels 313, 315, and 317 as through-gas channels. Furthermore, the distribution passage 322 has a distribution passage 324 as a lower gas passage and a through passage 323 as a through gas passage. Furthermore, the distribution passage 332 has a distribution passage 334 as a lower gas passage and a through passage 333 as a through gas passage. The multilayer structure is not limited to two layers, and may have two or more layers.

[0037] The first intermediate IF layer 213 supplies the gas distributed by the uniform gas distribution layer 212 to the second intermediate IF layer 221 of the second plate 220. That is, the first intermediate IF layer 213 has four gas flow paths 319, four gas flow paths 329, and four gas flow paths 339. The gas flow paths 319, 329, and 339 are flow paths that penetrate the first intermediate IF layer 213 in the plate thickness direction.

[0038] The first plate 210 is also provided with a countersunk hole 240 through which the bolt 230 is inserted when the first plate 210 and the second plate 220 are fixed together with the bolt 230.

[0039] The first plate 210 is also provided with through-holes 250 through which refrigerant piping (not shown) connecting to the second intermediate IF layer 221 of the second plate 220 is inserted.

[0040] The second plate 220 has a second intermediate IF (interface) layer 221, a flow path forming layer 222, and a gas hole layer 223. The second plate 220 is formed by arranging the plate-shaped second intermediate IF layer 221, the flow path forming layer 222, and the gas hole layer 223 together by diffusion bonding, brazing, or the like. The second plate 220 is made of, for example, aluminum, and after being joined by diffusion bonding or the like, the surface is anodized, thereby providing the second plate 220 with plasma resistance. The second plate 220 is disposed closer to the plasma processing space 10s than the first plate 210.

[0041] The second intermediate IF layer 221 is supplied with gas from the first intermediate IF layer 213 of the first plate 210. That is, the second intermediate IF layer 221 has a gas flow path 411 that communicates with the gas flow path 319. The second intermediate IF layer 221 also has a gas flow path 421 that communicates with the gas flow path 329. The second intermediate IF layer 221 also has a gas flow path 431 that communicates with the gas flow path 339. The gas flow paths 411, 421, and 431 are flow paths that penetrate the second intermediate IF layer 221 in the plate thickness direction. A seal member 260 is provided on the opposing surfaces of the first plate 210 and the second plate 220. The seal member 260 seals the gas flow path 319 and the gas flow path 411 while maintaining communication between them. The seal member 260 also seals the gas flow path 329 and the gas flow path 421 while maintaining communication between them. The seal member 260 also seals the gas flow path 339 and the gas flow path 431 while maintaining communication between them.

[0042] The second intermediate IF layer 221 also has coolant flow paths 501 and 503. The coolant flow paths 501 and 503 are flow paths that penetrate the second intermediate IF layer 221 in the plate thickness direction.

[0043] The second intermediate IF layer 221 is also provided with through holes (not shown) that communicate with liquid drainage holes 415, 425, and 435 (see FIGS. 6 and 7) of the flow path forming layer 222, which will be described later.

[0044] The flow path forming layer 222 has a gas diffusion space 413 to which gas is supplied from the second intermediate IF layer 221. That is, the flow path forming layer 222 has a through flow path 412 communicating with the gas flow path 411 and a gas diffusion space 413. The through flow path 412 is a flow path that penetrates the flow path forming layer 222 in the plate thickness direction and communicates the gas flow path 411 of the second intermediate IF layer 221 with the gas diffusion space 413. The gas diffusion space 413 is a circular space formed by a recessed groove formed on the lower surface of the flow path forming layer 222 and the upper surface of the gas hole layer 223, and corresponds to the gas diffusion chamber 13b1 shown in FIG. 1. A plurality of support columns 413P are provided within the gas diffusion space 413. Furthermore, a plurality of through flow paths 412 (four in the example of FIG. 7) are arranged at equal intervals on a circumference coaxial with the central axis of the gas diffusion space 413.

[0045] The flow path forming layer 222 also has drain holes (through holes for anodizing film) 415 into which electrodes (not shown) are inserted when anodizing the inner wall surfaces (gas flow paths 411, through-flow paths 412, gas diffusion spaces 413, and gas holes 414) of the second plate 220, and which are used to drain the solution after the anodizing. The drain holes 415 are flow paths that penetrate the flow path forming layer 222 in the plate thickness direction, and connect the through holes (not shown) of the second intermediate IF layer 221 and the gas diffusion spaces 413. The drain holes 415 are sealed with plugs (fill plugs).

[0046] Similarly, the flow path forming layer 222 has through-flow paths 422 communicating with the gas flow paths 421, a gas diffusion space 423, and liquid drain holes (through-holes for forming an alumite film) 425. The gas diffusion space 423 is an annular space formed by a recessed groove formed on the lower surface of the flow path forming layer 222 and the upper surface of the gas hole layer 223, and corresponds to the gas diffusion chamber 13b2 shown in FIG. 1. A plurality of support columns 423P are provided within the gas diffusion space 423. A plurality of through-flow paths 422 (four in the example of FIG. 7) are arranged at equal intervals on a circumference coaxial with the central axis of the gas diffusion space 423. The liquid drain holes 425 are sealed with plugs (fill plugs).

[0047] The flow path forming layer 222 also has through-flow paths 432 communicating with the gas flow paths 431, a gas diffusion space 433, and drain holes (through-holes for forming an alumite film) 435. The gas diffusion space 433 is a ring-shaped space formed by a recessed groove formed on the lower surface of the flow path forming layer 222 and the upper surface of the gas hole layer 223, and corresponds to the gas diffusion chamber 13b3 shown in FIG. 1. A plurality of support columns 433P are provided within the gas diffusion space 433. A plurality of through-flow paths 432 (four in the example of FIG. 7) are arranged at equal intervals on a circumference coaxial with the central axis of the gas diffusion space 433. The drain holes 435 are sealed with plugs (fill plugs).

[0048] The gas hole layer 223 supplies gas from the gas diffusion space 413 to the shower plate 132. That is, the gas hole layer 223 has a plurality of gas holes 414, 424, and 434. The gas hole 414 is a flow path that penetrates the gas hole layer 223 in the plate thickness direction, and connects the gas diffusion space 413 to the plasma processing space 10s (see FIG. 1). The gas hole 424 is a flow path that penetrates the gas hole layer 223 in the plate thickness direction, and connects the gas diffusion space 423 to the plasma processing space 10s. The gas hole 434 is a flow path that penetrates the gas hole layer 223 in the plate thickness direction, and connects the gas diffusion space 433 to the plasma processing space 10s.

[0049] As described above, the processing gas supplied from the gas supply port 13a1 is supplied to the gas diffusion space 413 via the gas flow path 311, the distribution flow path 312 (through flow path 313, communication flow path 314, through flow path 315, distribution flow path 316, and through flow path 317), the gas flow path 319, the gas flow path 411, and the through flow path 412. Then, the gas is supplied from the gas diffusion space 413 into the plasma processing space 10s via the gas holes 414 and the gas inlet 13c1 (see FIG. 1 ) of the cooling plate 131. In addition, the processing gas supplied from the gas supply port 13a2 is supplied to the gas diffusion space 423 via the gas flow path 321, the distribution flow path 322 (through flow path 323 and distribution flow path 324), the gas flow path 329, the gas flow path 421, and the through flow path 422. Then, gas is supplied from the gas diffusion space 423 into the plasma processing space 10s through the gas holes 424 and the gas inlet 13c2 (see FIG. 1) of the cooling plate 131. The processing gas supplied from the gas supply port 13a3 is supplied to the gas diffusion space 433 through the gas flow path 331, the distribution flow path 332 (through-flow paths 333 and distribution flow path 334), the gas flow path 339, the gas flow path 431, and the through-flow path 432. Then, gas is supplied from the gas diffusion space 433 into the plasma processing space 10s through the gas holes 434 and the gas inlet 13c3 (see FIG. 1) of the cooling plate 131.

[0050] The flow path forming layer 222 also has a coolant flow path 502 that communicates with the coolant flow paths 501 and 503. The coolant flow path 502 is a flow path formed by a recessed groove formed on the upper surface of the flow path forming layer 222 and the lower surface of the second intermediate IF layer 221. The coolant supplied from the coolant flow path 501 flows through the coolant flow path 502 and is discharged from the coolant flow path 503. Here, heat from the plasma generated in the plasma processing space 10s is input to the shower plate 132 (see FIG. 1). The cooling plate 131 can extract heat by supplying the coolant to the coolant flow path 502 of the second plate 220 that contacts the shower plate 132, thereby cooling the shower plate 132.

[0051] As described above, the cooling plate 131 according to this embodiment can provide a separate gas uniform distribution layer 212 that uniformly distributes the gas supplied from the gas supply port 13a to the gas diffusion chamber 13b. This simplifies the structure of the cooling plate 131 and reduces manufacturing costs. Furthermore, SUS or the like can be used for the first plate 210, improving material selectivity. Furthermore, the degree of freedom in flow path design can be improved.

[0052] Furthermore, the distribution flow paths 312, 322, and 332 branching in a tournament shape can be made into a multi-layer structure. This allows the flow path length to be shorter than when the gas flow path is a single, planar bypass. This improves the on / off response of gas in a substrate processing apparatus that uses pulsed gas.

[0053] The shape of the uniform gas distribution layer 212 is not limited to the structure shown in Fig. 4 and Fig. 5. Fig. 8 is another example of a top view illustrating the configuration of the uniform gas distribution layer 212. Fig. 9 is another example of a bottom view illustrating the configuration of the uniform gas distribution layer 212. In Fig. 8, positions corresponding to the gas flow paths 311, 321, and 331 are indicated by dashed lines, and in Fig. 9, positions corresponding to the gas flow paths 319, 329, and 339 are indicated by dashed lines. In Figs. 8 and 9, the orthogonal horizontal directions are indicated as the X direction and the Y direction, respectively, and the height direction is indicated as the Z direction.

[0054] 8 and 9 has distribution channels that distribute gas supplied from gas channels 311 provided in the connecting IF layer 211 to multiple gas channels 319 provided in the first intermediate IF layer 213. The distribution channels have through channels 361 and communication channels 362. The through channels 361 are channels that penetrate the uniform gas distribution layer 212 in the thickness direction and connect the gas channels 311 in the connecting IF layer 211 to the communication channels 362. The communication channels 362 are channels formed by grooves formed on the lower surface of the uniform gas distribution layer 212 and the upper surface of the first intermediate IF layer 213 and connect the through channels 361 to the gas channels 319 in the first intermediate IF layer 213.

[0055] The uniform gas distribution layer 212 also has distribution channels that distribute gas supplied from the gas channels 321 provided in the connecting IF layer 211 to multiple gas channels 329 provided in the first intermediate IF layer 213. The distribution channels include distribution channels 371 and through channels 372. The distribution channel 371 is a channel formed by a groove formed on the upper surface of the uniform gas distribution layer 212 and the lower surface of the connecting IF layer 211, and connects the gas channels 321 in the connecting IF layer 211 to the through channels 372. The through channels 372 are channels that penetrate the uniform gas distribution layer 212 in the thickness direction, and connect the distribution channels 371 to the distribution channels 373. The distribution channel 373 is a channel formed by a groove formed on the lower surface of the uniform gas distribution layer 212 and the upper surface of the first intermediate IF layer 213, and connects the through channels 372 to the gas channels 329 in the first intermediate IF layer 213.

[0056] The uniform gas distribution layer 212 also has distribution channels that distribute gas supplied from the gas channels 331 provided in the connecting IF layer 211 to multiple gas channels 339 provided in the first intermediate IF layer 213. The distribution channels include distribution channels 381 and through channels 382. The distribution channel 381 is a channel formed by a groove formed on the upper surface of the uniform gas distribution layer 212 and the lower surface of the connecting IF layer 211, and connects the gas channels 331 in the connecting IF layer 211 to the through channels 382. The through channels 382 are channels that penetrate the uniform gas distribution layer 212 in the thickness direction, and connect the distribution channels 381 to the distribution channels 383. The distribution channel 383 is a channel formed by a groove formed on the lower surface of the uniform gas distribution layer 212 and the upper surface of the first intermediate IF layer 213, and connects the through channels 382 to the gas channels 339 in the first intermediate IF layer 213.

[0057] 8 and 9, the uniform gas distribution layer 212 has a two-layer structure including an upper-surface gas flow path formed on the upper surface side of the uniform gas distribution layer 212, a lower-surface gas flow path formed on the lower surface side of the uniform gas distribution layer 212, and through-gas flow paths penetrating the upper surface side (upper-surface gas flow path) and the lower surface side (lower-surface gas flow path) of the uniform gas distribution layer 212. In the example shown in FIGS. 8 and 9, the flow path that supplies gas from the gas flow path 311 to the gas flow path 319 includes a communication flow path 362 as a lower-surface gas flow path and a through-flow path 361 as a through-gas flow path. In addition, the distribution flow path that distributes gas from the gas flow path 321 to the gas flow path 329 includes a distribution flow path 371 as an upper-surface gas flow path, a distribution flow path 373 as a lower-surface gas flow path, and a through-flow path 372 as a through-gas flow path. The distribution passages that distribute gas from the gas passage 331 to the gas passage 339 include a distribution passage 381 as an upper gas passage, a distribution passage 383 as a lower gas passage, and a through passage 382 as a through gas passage.

[0058] 8 and 9, the gas uniform distribution layer 212 can make the flow path lengths equal for the three gas systems. Also, the flow path volumes can be made equal. This can further improve the responsiveness when pulse-controlling the gas supply.

[0059] Here, the structure of the cooling plate 131A according to the reference example will be described with reference to Fig. 10. The cooling plate 131A according to the reference example has a connection IF (interface) layer 601, a refrigerant flow path forming layer 602, a gas distribution diffusion layer 603, and a gas hole layer 604.

[0060] The gas flow path 611 is a flow path that penetrates the connecting IF layer 601. The gas flow path 612 is a flow path that communicates with the gas flow path 611 and penetrates the refrigerant flow path forming layer 602. The distribution flow path 613 is a flow path that branches into multiple branches and is formed by grooves formed in the upper surface of the gas distribution / diffusion layer 603 and the lower surface of the refrigerant flow path forming layer 602. The gas flow path 614 is a flow path that communicates with the distribution flow path 613 and penetrates the gas distribution / diffusion layer 603. The gas diffusion space 615 is a space formed by grooves formed in the lower surface of the gas distribution / diffusion layer 603 and the upper surface of the gas hole layer 604. The gas holes 616 are a flow path that communicates with the gas diffusion space 615 and penetrates the gas hole layer 604. As a result, gas supplied from gas supply port 13a (see FIG. 1) passes through gas flow paths 611 and 612 and is supplied to distribution flow path 613, where it is distributed to multiple gas flow paths 614 and supplied to gas diffusion space 615. Then, the gas is supplied from gas diffusion space 615 to gas holes 616.

[0061] Coolant flow paths 501 and 503 are flow paths that penetrate the connection IF layer 601. Coolant flow path 502 is a flow path formed by a recessed groove formed in the upper surface of the coolant flow path forming layer 602 and the lower surface of the connection IF layer 601. As a result, the coolant supplied from the coolant flow path 501 flows through the coolant flow path 502 and is discharged from the coolant flow path 503.

[0062] FIG. 11 is a graph comparing the cooling plate 131 according to this embodiment with the cooling plate 131A according to a reference example.

[0063] 11(b), in the cooling plate 131A according to the reference example, the through-holes for supplying the gas are formed throughout the connecting IF layer 601, the refrigerant flow path forming layer 602, and the gas distribution / diffusion layer 603. In addition, in the cooling plate 131A according to the reference example, the through-holes for supplying the refrigerant are formed throughout the connecting IF layer 601. In addition, in the cooling plate 131A according to the reference example, the through-holes for anodizing are formed throughout the connecting IF layer 601, the refrigerant flow path forming layer 602, and the gas distribution / diffusion layer 603. The through-holes are used to insert electrode rods when anodizing the inner surfaces of the gas diffusion space 615 and the like and to discharge the solution after the anodizing.

[0064] Here, gas flow path 611 and gas flow path 612 are formed coaxially. On the other hand, gas flow path 614, which is connected via distribution flow path 613, is provided at a position different in axis from gas flow path 611 and gas flow path 612. For this reason, anodized aluminum film-forming through-holes that penetrate from the upper surface of cooling plate 131A toward gas diffusion space 615 are provided at a position different from that of gas flow path 611 on the upper surface side of cooling plate 131A. For this reason, a large number of anodized aluminum film-forming through-holes pass through the upper surface of refrigerant flow path-forming layer 602, which forms grooves that become refrigerant flow paths 502, and the upper surface of gas distribution / diffusion layer 603, which forms grooves that become distribution flow paths 613, reducing the degree of freedom in designing refrigerant flow paths 502 and distribution flow paths 613.

[0065] 11(a), the uniform gas distribution layer 212 that distributes the gas uniformly is formed separately from the flow path forming layer 222 in which the refrigerant flow paths 502 and the gas diffusion spaces 413, 423, and 433 are formed. Therefore, the through-holes for anodizing film formation, which are used to insert electrode rods when anodizing the inner surfaces of the gas diffusion spaces 413, 423, and 433, etc. and to discharge the solution after the treatment, are formed throughout the second intermediate IF layer 221 and the flow path forming layer 222.

[0066] Therefore, the layout of the gas distribution channel 300 can be performed without being affected by the position of the through-holes for anodizing, improving the degree of freedom in designing the gas distribution channel 300. Also, the structure of the gas channel can be simplified, and the length of the gas channel can be shortened. This improves the responsiveness of gas on / off in a substrate processing apparatus that uses pulsed gas.

[0067] The gas flow path 411 and the through-flow path 412 are coaxially formed and communicate with the gas diffusion space 413. Similarly, the gas flow path 421 and the through-flow path 422 are coaxially formed and communicate with the gas diffusion space 423. The gas flow path 431 and the through-flow path 432 are coaxially formed and communicate with the gas diffusion space 433. Therefore, the through-holes used for gas supply (gas flow paths 411, 421, 431 and through-flow paths 412, 422, 432) can be used to insert an electrode rod during anodizing and also as holes for discharging the solution after the process. For example, in the example shown in FIG. 7, the through-flow paths 412, 422, 432 can be used as through-holes for inserting an electrode rod, and the liquid drain holes 415, 425, 435 can be used as through-holes for discharging the solution from the gas diffusion spaces 413, 423, 433. This reduces the number of through-holes used for anodizing. As a result, the degree of freedom in designing the coolant flow path 500 can be improved.

[0068] Furthermore, different materials may be used, such as forming the uniform gas distribution layer 212 (first plate 210) from stainless steel and the flow path forming layer 222 (second plate 220) from aluminum. However, both the uniform gas distribution layer 212 (first plate 210) and the flow path forming layer 222 (second plate 220) may be formed from aluminum.

[0069] Furthermore, in the cooling plate 131 according to this embodiment, the coolant flow paths 502 are disposed below the uniform gas distribution layer 212. Therefore, compared to the cooling plate 131A according to the reference example, the coolant flow paths 502 can be positioned closer to the shower plate 132. This improves cooling performance. Furthermore, by reducing the number of through holes for forming anodized aluminum, the area in which the coolant flow paths 502 are formed can be increased, thereby improving cooling performance. As a result, heat dissipation performance against heat input from plasma can be improved, making it possible to accommodate processes in which a higher-power RF signal is output from the RF power supply 31.

[0070] The substrate processing apparatus 1 including the cooling plate 131 according to this embodiment has been described as a plasma processing apparatus that generates plasma in the plasma processing chamber 10, but is not limited to this. The cooling plate 131 may also be applied to a substrate processing apparatus such as a thermal CVD (Chemical Vapor Deposition) apparatus.

[0071] The above describes embodiments of the plasma processing system, but the present disclosure is not limited to the above embodiments, and various modifications and improvements are possible within the scope of the gist of the present disclosure as described in the claims. [Explanation of symbols]

[0072] W substrate 1. Substrate processing equipment 2. Control section 10 Plasma processing chamber (processing chamber) 10s Plasma treatment space 11 Substrate support 13. Shower head 13a Gas supply port 13b Gas diffusion chamber 13c Gas inlet 20 Gas supply unit 30 power supply 40 Exhaust System 51~53 Gas inlet 131 Cooling Plate 132 shower plate 210 Plate 1 211 Connection IF Layer 212 Gas uniform distribution layer (gas distribution layer) 213 First Intermediate IF Layer 220 Second Plate 221 Second Intermediate IF Layer 222 Channel forming layer 223 Gas hole layer 230 Bolts (fastening members) 240 counterbore 250 through holes 260 Sealing material 300 Gas distribution channel 311,321,331 Gas flow path 312,322,332 Distribution channel 319,329,339 Gas flow path 400 Gas diffusion channel 411,421,431 Gas flow path 412,422,432 Through-flow passage 413,423,433 Gas diffusion space 414,424,434 Gas holes 415,425,435 Drain hole 413P,423P,433P pillar 502 Refrigerant flow path

Claims

1. a processing chamber; a substrate support disposed within the processing chamber and configured to hold a substrate; a shower head facing the substrate support, The shower head is a shower plate in which a gas flow path for discharging gas is formed; a cooling plate that holds and cools the shower plate, The cooling plate is a first plate having a gas distribution layer for distributing gas; a second plate having a flow path forming layer in which a refrigerant flow path to which a refrigerant is supplied and a gas diffusion space to which gas distributed by the gas distribution layer is supplied are formed, the second plate having the refrigerant flow path formed on the first plate side and the gas diffusion space formed on the shower plate side; a fastening member that fastens the first plate and the second plate together, Substrate processing equipment.

2. a processing chamber; a substrate support disposed within the processing chamber and configured to hold a substrate; a shower head facing the substrate support, The shower head is a shower plate in which a gas flow path for discharging gas is formed; a cooling plate that holds and cools the shower plate, The cooling plate is a first plate having a gas distribution layer for distributing gas; a second plate having a refrigerant flow path to which a refrigerant is supplied and a gas diffusion space to which the gas distributed by the gas distribution layer is supplied; a fastening member that fastens the first plate and the second plate, The gas distribution layer has a multi-layer structure in which an upper gas flow passage formed on an upper surface side, a lower gas flow passage formed on a lower surface side, and a through-flow passage penetrating the upper surface side and the lower surface side are formed. Substrate processing equipment.

3. The first plate is a connection interface layer to which gas is supplied from a gas supply unit; the gas distribution layer distributing the gas supplied from the connection interface layer; a first intermediate interface layer that supplies the gas distributed by the gas distribution layer to the second plate; 3. The substrate processing apparatus according to claim 1 or 2.

4. The second plate is a second intermediate interface layer to which gas is supplied from the first plate; a flow path forming layer having a gas diffusion space to which gas is supplied from the coolant flow path and the second intermediate interface layer; a gas hole layer for supplying gas from the gas diffusion space to the shower plate, The substrate processing apparatus according to claim 1 .

5. The refrigerant flow channels are disposed below the gas distribution layer. The substrate processing apparatus according to claim 1 .

6. a seal member is provided on the opposing surfaces of the first plate and the second plate; The substrate processing apparatus according to claim 1 .

7. the first plate and the second plate are formed of aluminum; The substrate processing apparatus according to claim 1 .

8. the first plate is made of stainless steel, The second plate is made of aluminum. The substrate processing apparatus according to claim 1 .

9. the second plate is disposed closer to the plasma processing space than the first plate; The substrate processing apparatus according to claim 1 .

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