Film forming apparatus and film forming method

Abstract

To mount various targets without changing the size of a cathode in a film deposition apparatus for depositing a film on a substrate by sputtering and without increasing the size of the apparatus.SOLUTION: A film deposition apparatus for depositing a film on a substrate by sputtering includes a substrate holding part for holding the substrate and a plurality of cathodes for holding targets discharging sputtered particles and connected to a power supply. At least one cathode in the plurality of cathodes holds two or more kinds of the targets.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present disclosure relates to a film forming apparatus and a film forming method. [Background technology]

[0002] The film formation apparatus disclosed in Patent Document 1 has a processing vessel, and a stage is provided within the processing vessel. The stage has an electrostatic chuck on which a wafer is placed. Furthermore, three or more targets are provided above the stage. The targets have different metal materials. Furthermore, each of the targets is held by a metal holder. The holder is supported on the ceiling of the processing vessel via an insulating member. A power supply is connected to each of the targets via the holder. The power supply applies a negative DC voltage to each of the targets. Furthermore, multiple magnets are arranged outside the processing vessel so that the corresponding targets face each other. The film formation apparatus also has multiple scanning mechanisms for operating each of the multiple magnets. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2019-4075 Summary of the Invention [Problem to be solved by the invention]

[0004] The technology disclosed herein enables a film formation apparatus that forms a film on a substrate by sputtering to be equipped with a greater variety of targets without changing the size of the cathode or increasing the size of the apparatus. [Means for solving the problem]

[0005] One aspect of the present disclosure is to NisuA film forming apparatus for forming a film by sputtering, comprising: a substrate holding unit for holding a substrate; a target for emitting sputter particles; and a plurality of cathodes connected to a power source; a shutter having an opening and provided between the cathode and the substrate holder; At least one of the plurality of cathodes is , complex Several types of the above targets Line up All retained The shutter is configured to selectively expose one of the multiple types of targets held by the same cathode to the substrate holder and to shield the remaining targets. . [Effects of the Invention]

[0006] According to the present disclosure, a film formation apparatus that forms a film on a substrate by sputtering can be equipped with a wider variety of targets without changing the size of the cathode and without increasing the size of the apparatus. [Brief explanation of the drawings]

[0007] [Figure 1] 1 is a longitudinal sectional view showing an outline of the configuration of a film forming apparatus according to an embodiment of the present invention. [Figure 2] FIG. 2 is a schematic bottom view of a ceiling portion of the processing vessel. [Figure 3] FIG. 2 is a diagram for explaining the configuration around the first cathode. [Figure 4] FIG. 2 is a diagram for explaining the configuration around the second cathode. [Figure 5] FIG. 2 is a schematic bottom view of the first shutter. [Figure 6] FIG. 2 is a schematic bottom view of the second shutter. [Figure 7] 10A and 10B are diagrams showing how one target is selectively exposed by a first shutter and a second shutter. [Figure 8] 10A and 10B are diagrams showing how one target is selectively exposed by a first shutter and a second shutter. [Figure 9] 10A and 10B are diagrams showing how one target is selectively exposed by a first shutter and a second shutter. [Figure 10] FIG. 10 is a diagram showing another example of a cathode. DETAILED DESCRIPTION OF THE INVENTION

[0008] 2. Description of the Related Art In a manufacturing process for semiconductor devices and the like, a film formation process is performed to form a desired film, such as a metal film, on a substrate, such as a semiconductor wafer (hereinafter referred to as a "wafer"). This film formation process is performed by, for example, sputtering.

[0009] A film formation apparatus for forming a film by sputtering includes a substrate holder for holding a substrate, and a cathode connected to a power source, which holds the target so that the target emitting sputter particles faces the substrate holder. The cathode is supported, for example, on the ceiling of a processing vessel in which the substrate holder is provided.

[0010] A film forming apparatus may be equipped with multiple targets. For example, when a multilayer film having different compositions between layers is formed using a single film forming apparatus, multiple targets are installed. When multiple targets are installed, the targets are held by different cathodes (see Patent Document 1).

[0011] Furthermore, in recent years, there has been a demand for mounting more types of targets in a film formation apparatus due to the need for further increasing the number of layers in multilayer films. However, if the number of cathodes is increased to increase the number of targets mounted in the film formation apparatus, the processing vessel supporting the cathodes will become larger, resulting in an increase in the size of the film formation apparatus. While the increase in the size of the film formation apparatus when the number of cathodes is increased can be suppressed by changing the cathode design to make them smaller, changing the cathode design changes the state of release of sputtered particles into the processing space during sputtering, which requires a review of the processing conditions, which is undesirable.

[0012] Therefore, the technology disclosed herein enables a film formation apparatus that forms a film on a substrate by sputtering to be equipped with a greater variety of targets without changing the size of the cathode or increasing the size of the apparatus.

[0013] Hereinafter, a film forming apparatus according to this embodiment will be described with reference to the drawings. In this specification and the drawings, elements having substantially the same functional configurations are designated by the same reference numerals, and redundant description will be omitted.

[0014] <Film forming equipment> FIG. 1 is a vertical cross-sectional view showing an outline of the configuration of a film forming apparatus 1 according to this embodiment. FIG. 2 is a schematic bottom view of a ceiling portion of a processing chamber 10, which will be described later. FIG. 3 is a view for explaining the configuration around a first cathode, which will be described later. FIG. 4 is a view for explaining the configuration around a second cathode, which will be described later. FIG. 5 is a schematic bottom view of a first shutter, which will be described later. FIG. 6 is a schematic bottom view of a second shutter, which will be described later. FIGS. 7 to 9 are views showing how one target is selectively exposed by the first shutter and the second shutter. Note that a shield, which will be described later, is not shown in FIG. 1.

[0015] 1 forms a film on a wafer W as a substrate by sputtering, and more specifically, forms a multilayer film on the wafer W by magnetron sputtering. The film forming apparatus 1 includes a processing chamber 10.

[0016] The processing vessel 10 is configured to be depressurized, accommodates a wafer W, is made of, for example, aluminum, and is connected to a ground potential. An exhaust device 11 for depressurizing the space within the processing vessel 10 is connected to the bottom of the processing vessel 10 via an APC valve 12. A loading / unloading port 13 for the wafer W is formed in the sidewall of the processing vessel 10, and a gate valve 13a for opening and closing the loading / unloading port 13 is provided at the loading / unloading port 13.

[0017] A mounting table 14 serving as a substrate holder is provided inside the processing vessel 10. A wafer W is placed on the mounting table 14. The mounting table 14 has a base portion 14a and an electrostatic chuck 14b.

[0018] The base portion 14a is formed into a disk shape using, for example, aluminum. A heater (not shown) is provided on the base portion 14a to heat the wafer W. Note that a cooling mechanism may be provided instead of the heater, or both a heater and a cooling mechanism may be provided.

[0019] The electrostatic chuck 14b has a dielectric film and an electrode provided as an inner layer of the dielectric film, and is provided on the base portion 14a. The electrode of the electrostatic chuck 14b is connected to a DC power supply 15. The wafer W placed on the electrostatic chuck 14b is attracted and held by the electrostatic chuck 14b by electrostatic force generated by applying a DC voltage from the DC power supply 15 to the electrode.

[0020] The mounting table 14 is connected to a rotation / movement mechanism 16. The rotation / movement mechanism 16 has, for example, a support shaft 16a and a drive unit 16b. The support shaft 16a extends in the vertical direction so as to penetrate the bottom wall of the processing vessel 10. A sealing member SL is provided between the support shaft 16a and the bottom wall of the processing vessel 10. The sealing member SL is a member, such as a magnetic fluid seal, that seals the space between the bottom wall of the processing vessel 10 and the support shaft 16a so that the support shaft 16a can rotate and move up and down. The upper end of the support shaft 16a is connected to the center of the lower surface of the mounting table 14, and the lower end is connected to the drive unit 16b. The drive unit 16b has a drive source (e.g., a motor) that generates a drive force for rotating and moving the support shaft 16a up and down. As the support shaft 16a rotates about its axis AX, the mounting table 14 rotates about the axis AX, and as the support shaft 16a moves up and down, the mounting table 14 moves up and down.

[0021] Above the mounting table 14, a plurality of cathodes 20a made of a metal such as copper are provided to hold the targets 20; in this example, four are provided. Each cathode 20a holds the target 20 on its front side so that the target 20 is disposed inside the processing vessel 10 and faces the mounting table 14. Each cathode 20a is attached to the ceiling of the processing vessel 10. A through hole is formed in the processing vessel 10 at the mounting position of each cathode 20a. An insulating member 10a is provided on the inner wall surface of the processing vessel 10 to surround the through hole. Each cathode 20a is attached to the processing vessel 10 via the insulating member 10a to cover the through hole.

[0022] A power supply 21 is connected to each cathode 20a, and a negative DC voltage is applied from the power supply 21. Instead of the negative DC voltage, an AC voltage may be applied. Furthermore, a magnet 22 is provided at a position on the back side of each cathode 20a, outside the processing vessel 10. The magnet 22 is connected to a moving mechanism 23, and is swung in a predetermined direction along the back side of the corresponding cathode 20a by this moving mechanism 23. The predetermined direction is, for example, a tangent direction at the center point of the corresponding cathode 20a to a circle centered on the axis line AX. The moving mechanism 23 has a driving unit (not shown) including a driving source (e.g., a motor) that generates a driving force for swung the magnet 22.

[0023] In this example, the number of cathodes 20a is four, as described above. These four cathodes 20a are arranged at equal intervals along a circumference centered on the axis line AX, as shown in Fig. 2. Note that, hereinafter, the cathodes 20a arranged at equal intervals along the circumference as described above may be referred to as the first cathode 20a1, the second cathode 20a2, the third cathode 20a3, and the fourth cathode 20a4, in clockwise order from the top in Fig. 2.

[0024] In this embodiment, at least one of the four cathodes 20a is capable of holding multiple types of targets 20 simultaneously. For example, as shown in Figures 2 and 3, one large target 20 is held on the first and third cathodes 20a1 and 20a3, and as shown in Figures 2 and 4, two small targets 20 are held on the second and fourth cathodes 20a2 and 20a4 so as to be aligned in the swing direction of the magnet 22.

[0025] In the following, the target 20 held by the first cathode 20a1 may be referred to as the first target 201, and of the two targets 20 held by the second cathode 20a2, the target 20 on the positive side in the circumferential direction about the axis AX as viewed from the mounting table 14 may be referred to as the second target 202, and the target 20 on the negative side may be referred to as the third target 203. Similarly, the target 20 held by the third cathode 20a3 may be referred to as the fourth target 204, and of the two targets 20 held by the fourth cathode 20a4, the target 20 on the positive side in the circumferential direction as viewed from the mounting table 14 may be referred to as the fifth target 205, and the target 20 on the negative side may be referred to as the sixth target 206.

[0026] The first to sixth targets 201 to 206 are made of different types of materials.

[0027] The first cathode 20a1 is provided with a shield 24 to prevent cross-contamination between the single target 20 held by the first cathode 20a1 and the targets 20 held by the other cathodes 20a. The shield 24 is provided to cover the outer periphery of the target 20 held by the first cathode 20a1. A similar shield 24 is also provided for the third cathode 20a3.

[0028] The second cathode 20a2, which holds two targets 20, is provided with a shield 25 to prevent contamination between the two targets 20 held by the second cathode 20a2 and between the target 20 held by the second cathode 20a2 and the targets 20 held by other cathodes 20a. The shield 25 is provided to cover the outer periphery of all of the targets 20 held by the second cathode 20a2 and to separate the two targets 20 held by the second cathode 20a2. A similar shield 25 is also provided for the fourth cathode 20a4.

[0029] The cathode 20a can be prevented from being sputtered by the shields 24 and 25. The shields 24 and 25 are made of, for example, aluminum. The end faces of the shields 24, 25 on the side of the mounting table 14 (the bottom faces in the figure) and the end faces of the corresponding unused targets 20 on the side of the mounting table 14 (the bottom faces in the figure) are located closer to the mounting table 14 (located below in the figure).

[0030] The oscillation range of the magnet 22 relative to each target 20 varies depending on the size of the target 20. For example, as indicated by the double-headed arrows in Figures 3 and 4, the oscillation range of the magnet 22 relative to a small target 20 such as the second target 202 is smaller, specifically about half, than the oscillation range of the magnet 22 relative to a large target 20 such as the first target 201. This makes it possible to prevent unnecessary portions (for example, the shield 25 or other small targets held by the same cathode) from being sputtered during film formation using the small target 20.

[0031] 1, a shutter 30 is provided between the cathode 20a and the mounting table 14. Specifically, a first shutter 31 and a second shutter 32 are provided between the target 20 held by the cathode 20a and the mounting table 14. The first shutter 31 and the second shutter 32 each have a shape that follows a conical surface with the axis AX as its central axis. The second shutter 32 is provided between the first shutter 31 and the mounting table 14.

[0032] 5, a large opening 31a having a size corresponding to the large target 20 held by the first and third cathodes 20a1 and 20a3 is formed in the first shutter 31. Furthermore, as shown in FIG. 1, one end of a rotation shaft 33 is connected to the central portion of the first shutter 31.

[0033] As shown in FIG. 6 , the second shutter 32 has a large opening 32a corresponding to the large target 20 held by the first and third cathodes 20a1 and 20a3, and small openings 32b and 32c corresponding to the small targets 20 held by the second and fourth cathodes 20a2 and 20a4. The small opening 32b is an opening for the target 20 on the positive side in the circumferential direction as viewed from the mounting table 14, of the two small targets 20 held by the second and fourth cathodes 20a2 and 20a4. On the other hand, the small opening 32c is an opening for the target 20 on the positive side in the circumferential direction as viewed from the mounting table 14, of the two small targets 20 held by the second and fourth cathodes 20a2 and 20a4. Hereinafter, the small opening 32b and the small opening 32c may be referred to as the positive-side small opening 32b and the negative-side small opening 32c, respectively. When viewed from the mounting table 14 side, if the large opening 32a is positioned at the 12 o'clock position, for example, the positive side small opening 32b is positioned at around 3 o'clock and the negative side small opening 32c is positioned at around 6 o'clock.

[0034] It is also possible that the first shutter 31 has openings similar to the large opening 32a and the small openings 32b and 32c, and the second shutter 32 has an opening similar to the large opening 31a.

[0035] 1, one end of a rotary shaft 34 is connected to the central portion of the first shutter 31, and the other end of the rotary shaft 34 is connected to the central portion of the second shutter 32. As shown in FIG.

[0036] The central axes of the rotation shafts 33 and 34 are coaxial and substantially coincide with the axis AX. The rotation shaft 33 extends to the outside of the processing vessel 10, and the other end thereof is connected to the rotation mechanism 35. The rotation mechanism 35 is configured to be able to rotate the rotation shafts 33 and 34 perpendicular to each other about the axis AX. The rotation mechanism 35 has a drive unit (not shown) including a drive source (e.g., a motor) that generates a drive force for rotating the rotation shafts 33 and 34.

[0037] As the rotation shaft 33 rotates about the axis AX, the first shutter 31 also rotates about the axis AX, and as the rotation shaft 34 rotates about the axis AX, the second shutter 32 also rotates about the axis AX. The rotation of the first shutter 31 and the second shutter 32 changes the relative positions of the large opening 32a, the small opening 32b, the small opening 32c, and the target 20. As a result, for example, only one target 20 out of all the targets 20 is selectively exposed to the mounting table 14 through the openings of the first shutter 31 and the second shutter 32.

[0038] Specifically, for example, of all the targets 20, only the first target 201 is exposed to the mounting table 14 through the large opening 31a and the large opening 32a as shown in FIG. 7, while the other targets 20 are shielded from the mounting table 14 by the first shutter 31 and the second shutter 32. Furthermore, of all the targets 20, only the second target 202 is exposed to the mounting table 14 through the large opening 31a and the small opening on the front side 32b as shown in FIG. 8, while the other targets 20 are shielded from the mounting table 14 by the first shutter 31 and the second shutter 32. Furthermore, of all the targets 20, only the third target 203 is exposed to the mounting table 14 through the large opening 31a and the negative side small opening 32c as shown in Figure 9, while the other targets 20 are shielded from the mounting table 14 by the first shutter 31 and the second shutter 32.

[0039] The film forming apparatus 1 also includes a gas supply unit (not shown) that supplies gas into the processing vessel 10. The gas supply unit includes, for example, a gas source, a flow rate controller such as a mass flow controller, and a gas introduction unit. The gas source stores a gas (e.g., Ar gas) that is excited in the processing vessel 10. The gas source is connected to the gas introduction unit via the flow rate controller. The gas introduction unit is a member that introduces gas from the gas source into the processing vessel 10.

[0040] When gas is supplied from the gas supply unit and power is supplied to the target 20 by the power supply 21, the gas supplied into the processing vessel 10 is excited. In addition, a magnetic field is generated near the front of the target 20 by the magnet 22, and plasma is concentrated near the front of the target 20. Then, positive ions in the plasma collide with the target 20, causing materials constituting the target 20 to be emitted from the target 20 as sputtered particles. As a result, a desired film is formed on the wafer W.

[0041] As shown in FIG. 1, the film forming apparatus 1 further includes a control unit U. The control unit U is configured by, for example, a computer including a CPU, a memory, and the like, and has a program storage unit (not shown). The program storage unit stores a program for controlling the drive unit 16b, the drive unit of the moving mechanism 23, the drive unit of the rotation mechanism 35, and the like to realize the film forming process described below in the film forming apparatus 1. The program may be recorded on a computer-readable storage medium and installed into the control unit U from the storage medium. Alternatively, part or all of the program may be realized by dedicated hardware (circuit board).

[0042] <Film formation process> Next, an example of a film formation process using the film formation apparatus 1 will be described.

[0043] (Delivery) First, under the control of the control unit U, a wafer W is loaded into the processing vessel 10, which has been adjusted to a desired pressure. Specifically, the gate valve 13a is opened, and a transfer mechanism (not shown) holding the wafer W is inserted into the processing vessel 10 from a transfer chamber (not shown) in a vacuum atmosphere adjacent to the processing vessel 10 through the transfer port 13. The wafer W is then transferred to above the mounting table 14. Next, the wafer W is transferred onto the raised support pins (not shown), after which the transfer mechanism is removed from the processing vessel 10, and the gate valve 13a is closed. At the same time, the support pins are lowered, and the wafer W is placed on the mounting table 14 and is attracted and held by the electrostatic attraction force of the electrostatic chuck 14b.

[0044] (Multilayer film formation) Subsequently, a multilayer film is formed on the wafer W by magnetron sputtering. Specifically, film formation using the first target 201, film formation using the second target 202, film formation using the third target 203, film formation using the fourth target 204, film formation using the fifth target 205, and film formation using the sixth target 206 are performed on the wafer W. The order of film formation is arbitrary and is determined in advance. Furthermore, at least one of the six types of film formation may be performed multiple times.

[0045] In film formation using the first target 201, the rotation mechanism 35 rotates the first shutter 31 and the second shutter 32, thereby selectively exposing only the first target 201 of all the targets 20 to the mounting table 14 through the large openings 31a and 32a. The mounting table 14 is rotated by the rotation / movement mechanism 16, and Ar gas, for example, is supplied into the processing chamber 10 from a gas supply unit (not shown). Power is supplied to the first target 201 from the power supply 21. At the same time, the movement mechanism 23 oscillates the magnet 22 along the first cathode 20a1 in the predetermined direction described above. The power from the power supply 21 ionizes the Ar gas in the processing chamber 10, and electrons generated by the ionization drift due to a magnetic field (i.e., a leakage magnetic field) formed in front of the first target 201 by the corresponding magnet 22, thereby generating high-density plasma. The surface of the first target 201 is sputtered by Ar ions generated in this plasma, and sputtered particles of the constituent material of the first target 201 are deposited on the wafer W, forming a layer of the constituent material of the first target 201.

[0046] In film formation using the second target 202, the rotation mechanism 35 rotates the first shutter 31 and the second shutter 32, so that only the second target 202 out of all the targets 20 is selectively exposed to the mounting table 14 through the large opening 31a and the small forward opening 32b. In this state, similar to film formation using the first target 201, Ar gas is supplied into the processing vessel 10, power is supplied from the power supply 21, and the corresponding magnet 22 is oscillated. As a result, a layer of the constituent material of the second target 202 is formed. Note that in film formation using the small second target 202, the oscillation range of the magnet 22 is set narrower than in film formation using the large first target 201.

[0047] In film formation using the third target 203, the rotation mechanism 35 rotates the first shutter 31 and the second shutter 32, so that only the third target 203 among all the targets 20 is selectively exposed to the mounting table 14 through the large opening 31a and the negative-side small opening 32c. Then, in this state, similar to film formation using the second target 202, supply of Ar gas into the processing vessel 10, supply of power from the power supply 21, and swing of the corresponding magnet 22 are performed. As a result, a layer of the constituent material of the third target 203 is formed.

[0048] In film formation using the fourth target 204, the rotation mechanism 35 rotates the first shutter 31 and the second shutter 32, so that only the fourth target 204 among all the targets 20 is selectively exposed to the mounting table 14 through the large openings 31a and 32a. Then, in this state, similar to film formation using the first target 201, supply of Ar gas into the processing vessel 10, supply of power from the power supply 21, and swing of the corresponding magnet 22 are performed. As a result, a layer of the constituent material of the fourth target 204 is formed.

[0049] In film formation using the fifth target 205, the rotation mechanism 35 rotates the first shutter 31 and the second shutter 32, so that only the fifth target 205 among all the targets 20 is selectively exposed to the mounting table 14 through the large opening 31a and the small forward opening 32b. Then, in this state, similar to film formation using the second target 202, supply of Ar gas into the processing vessel 10, supply of power from the power supply 21, and swing of the corresponding magnet 22 are performed. As a result, a layer of the constituent material of the fifth target 205 is formed.

[0050] In film formation using the sixth target 206, the rotation mechanism 35 rotates the first shutter 31 and the second shutter 32, so that only the sixth target 206 among all the targets 20 is selectively exposed to the mounting table 14 through the large opening 31a and the negative-side small opening 32c. Then, in this state, similar to film formation using the second target 202, supply of Ar gas into the processing vessel 10, supply of power from the power supply 21, and swing of the corresponding magnet 22 are performed. As a result, a layer of the material constituting the sixth target 206 is formed.

[0051] (Export) Thereafter, the wafer W is unloaded from the processing vessel 10. Specifically, the wafer W is unloaded from the processing vessel 10 in the reverse order of the loading operation. Then, the process returns to the above-mentioned loading step, and the next wafer W to be subjected to film formation is processed in the same manner.

[0052] <Effects> As described above, in this embodiment, the film formation apparatus 1 includes a plurality of cathodes 20a, and at least one of the plurality of cathodes 20a holds a plurality of types of targets 20. Therefore, according to this embodiment, the film formation apparatus 1 can simultaneously mount a variety of targets 20 without changing the size of the cathode 20a and without increasing the size of the film formation apparatus 1. Unlike the present embodiment, the method of reducing the size of the cathodes and increasing the number of cathodes requires a magnet and a magnet oscillation mechanism for each cathode in an apparatus that forms films by magnetron sputtering, and therefore ultimately has a limit to how much the apparatus can be made larger.

[0053] Furthermore, the configuration of the film formation apparatus 1 according to this embodiment can be applied to an existing film formation apparatus that includes a plurality of cathodes 20a, each of which is provided with a magnet 22, without changing the design of the cathodes 20a or the magnets 22. Therefore, when fabricating the film formation apparatus 1 according to this embodiment, review of film formation conditions, etc., can be minimized.

[0054] Furthermore, in this embodiment, the cathode 20a holding the multiple targets 20 has the multiple targets 20 attached to it so that they are aligned in the oscillation direction of the magnet 22. Unlike this embodiment, if the targets 20 are attached so that they are aligned in a direction perpendicular to the oscillation direction of the magnet 22, it is necessary to change the design of the magnet 22, for example, by providing multiple magnets 22 for one cathode 20a. In contrast, in this embodiment, there is no need to change the design of the magnet 22 as described above. Furthermore, the oscillation range of the magnet 22 can be adjusted without changing the existing design of the magnet 22, and by reducing the oscillation range of the magnet 22 for a small target 20, it is possible to prevent unnecessary regions from being sputtered. Furthermore, since only one magnet 22 is required for one cathode 20a, an increase in manufacturing costs can be suppressed.

[0055] Furthermore, in the film formation apparatus 1 according to this embodiment, the target 20 for forming a thick layer can be configured to be large, and the target 20 for forming a thin layer can be configured to be small, thereby reducing the difference in the lifespan of the targets 20. Therefore, the target for forming a thick layer and the target for forming a thin layer can be replaced simultaneously without wasting the target for forming a thin layer. If the targets can be replaced simultaneously in this way, the downtime (period of operation suspension) of the apparatus due to the replacement can be reduced, which is preferable.

[0056] <Other examples of cathodes> FIG. 10 is a diagram showing another example of the cathode. In the above example, the cathode 20a configured to be able to hold a plurality of targets 20 holds two targets 20, but may hold three or more targets 20 as shown in the drawing. In this example as well, the shield 25 is provided so as to cover the outer periphery of the entire plurality of targets 20 held by the cathode 20a and to separate the three targets 20 held by the cathode 20a.

[0057] <Other examples of shields> The first shield and the second shield are not limited to the above examples. For example, by changing the number and positions of the openings from those in the examples of Figures 5 and 6, the rotation mechanism may rotate the first shutter and the second shutter, thereby making it possible to switch between (A) and (B) below. (A) Of all the targets held by the multiple cathodes 20a, one target 20 is selectively exposed to the mounting table 14 through the openings of the first and second shutters. (B) Of all the targets held by the plurality of cathodes 20a, two or more targets 20 are selectively exposed to the mounting table 14 through the openings of the first and second shutters.

[0058] If the rotation mechanism can be switched as described above, it is possible to selectively expose one target 20 to the mounting table 14 as in (A) to form a layer of a single material on the wafer W, or to selectively expose two or more targets to the mounting table 14 as in (B) to form an alloy layer on the wafer W. Therefore, a multilayer film including an alloy layer can be formed on the wafer W.

[0059] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive, and the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0060] 1 Film deposition equipment 14 Mounting table 20 Target 20a cathode 20a1 1st cathode 20a2 Second cathode 20a3 3rd cathode 20a4 4th cathode 21 Power supply 30 Shutter 31 First shutter 31a large opening 32 Second shutter 32a large opening 32b small opening 32c small opening 201 First Target 202 Second Target 203 Third Target 204 4th Target 205 5th Target 206 6th Target W wafer

Claims

1. A film forming apparatus for forming a film on a substrate by sputtering, a substrate holder for holding a substrate; a plurality of cathodes each holding a target that emits sputter particles and connected to a power source; a shutter having an opening and provided between the cathode and the substrate holder; At least one of the plurality of cathodes holds a plurality of types of targets, The film forming apparatus is configured such that the shutter selectively exposes one target of the plurality of types of targets held by the same cathode to the substrate holder, while shielding the remaining targets.

2. The film forming apparatus according to claim 1 , wherein the at least one cathode is provided with a shield to separate the targets held by the cathode.

3. The film forming apparatus according to claim 1 , wherein at least one of the plurality of cathodes holds a plurality of types of small targets, and the other cathodes hold one large target.

4. A film forming apparatus described in any one of claims 1 to 3, further comprising a rotation mechanism that selectively exposes a specific target from among all the targets held on the cathode in the film forming apparatus to the substrate holding portion through the opening by rotating the shutter.

5. the shutters include a first shutter and a second shutter, each having the opening; The rotation mechanism includes: By rotating the first shutter and the second shutter, The film formation apparatus according to claim 4 , wherein one of all the targets held by the cathode in the film formation apparatus is selectively exposed to the substrate holding part through the openings in the first shutter and the second shutter.

6. The rotation mechanism includes: By rotating the first shutter and the second shutter, selectively exposing one of all the targets held by the cathode in the film forming apparatus to the substrate holding part through the openings of the first shutter and the second shutter; The film forming apparatus according to claim 5, wherein the film forming apparatus is switched between selectively exposing two or more of the targets held by the cathode in the film forming apparatus to the substrate holding portion through the openings in the first shutter and the second shutter.

7. A film formation method for forming a film on a substrate by sputtering using a film formation apparatus, comprising: The film forming apparatus includes: a substrate holder for holding a substrate; a plurality of cathodes each holding a target that emits sputter particles and connected to a power source; a first shutter and a second shutter, each having a plurality of openings, provided between the cathode and the substrate holder; At least one of the plurality of cathodes holds a plurality of types of targets, the first shutter and the second shutter are configured to selectively expose one target to the substrate holder among the plurality of types of targets held by the same cathode, and to shield the remaining targets; rotating the first shutter and the second shutter to selectively expose one of all the targets held by the cathode in the film forming apparatus to the substrate holding part through the openings of the first shutter and the second shutter, thereby forming a layer of a single material on a substrate; a step of rotating the first shutter and the second shutter to selectively expose two or more of all the targets held by the cathode in the film formation apparatus to the substrate holding portion through the openings in the first shutter and the second shutter, thereby forming an alloy layer on the substrate.

Images