Single-space bake chamber for mask cleaning

Abstract

Embodiments of a bake chamber for baking a substrate and methods of use thereof are provided herein. In some embodiments, a multi-chamber process tool for processing a substrate includes a bake chamber configured to heat a substrate to remove residue or haze remaining after a wet cleaning process performed in a wet cleaning chamber, the bake chamber including a chamber body enclosing an interior space, a heater disposed in the interior space, the heater configured to have a surface temperature of about 100 to about 400° C. during use, a substrate support configured to support a substrate and disposed in the interior space, the substrate support having a direct line of sight with the heater such that the heater heats the substrate support via convection, and a gas inlet and a gas outlet connected to the interior space.

Description

[Technical Field]

[0001] TECHNICAL FIELD

[0001] Embodiments of the present disclosure generally relate to substrate processing equipment. [Background technology]

[0002]

[0002] Substrates used in the semiconductor manufacturing industry are often cleaned to remove unwanted materials, such as contaminants or other unwanted particles generated during processing. Substrates include semiconductor wafers, chamber parts, photomasks, etc. After wet or dry cleaning processes, substrates may contain residual moisture, residue, or haze. Bake chambers can be used to remove residual moisture, unwanted particles, or haze from substrates. However, the heating components and materials surrounding the heating components in typical bake chambers can oxidize, resulting in defects, or the high temperatures can cause thermal stresses that can cause particles to fly from the surfaces of the heating components, potentially contaminating the substrate.

[0003] Accordingly, the present inventors have provided an improved bake chamber for cleaning substrates. Summary of the Invention

[0004]

[0004] Embodiments of a bake chamber for baking a substrate and methods of using the same are provided herein. In some embodiments, a multi-chamber process tool for processing a substrate includes a bake chamber configured to heat a substrate to remove residue or haze remaining after a wet cleaning process performed in a wet cleaning chamber, the bake chamber including a chamber body enclosing an interior space, a heater disposed in the interior space, the heater configured to have a surface temperature of about 100 to about 400°C during use, a substrate support configured to support the substrate and disposed in the interior space, the substrate support having a direct line of sight with the heater such that the heater heats the substrate support via convection, and a gas inlet and a gas outlet connected to the interior space.

[0005]

[0005] In some embodiments, a bake chamber for baking a photomask includes a chamber body enclosing an internal space, a heater disposed in the internal space, the heater configured to have a surface temperature of about 100 to about 400°C during use, a substrate support configured to support the photomask and disposed in the internal space, the substrate support having a direct line of sight with the heater such that the heater heats the substrate support via convection, and a gas inlet and a gas outlet connected to the internal space on opposite sides of the chamber body.

[0006]

[0006] In some embodiments, a method for baking a substrate in a bake chamber includes placing a substrate on a support within an interior space of the bake chamber, opening a vacuum valve to pump down the interior space of the bake chamber to a vacuum pressure via a vacuum pump, closing the vacuum valve and opening a gas inlet valve to fill the interior space with an inert gas, and baking the substrate via convection using a heater positioned in the interior space of the bake chamber to dissociate residues on the substrate.

[0007]

[0007] Other and further embodiments of the present disclosure are described below.

[0008]

[0008] Embodiments of the present disclosure, briefly summarized above and described in more detail below, can be understood by reference to the exemplary embodiments of the present disclosure illustrated in the accompanying drawings. However, because the present disclosure is susceptible to other equally effective embodiments, the accompanying drawings depict only typical embodiments of the present disclosure and therefore should not be considered limiting in scope. [Brief explanation of the drawings]

[0009] [Figure 1]

[0009] FIG. 1 shows a schematic diagram of a multi-chamber processing tool having a bake chamber in accordance with at least some embodiments of the present disclosure. [Figure 2]

[0010] FIG. 1 shows a schematic cross-sectional side view of a bake chamber according to at least some embodiments of the present disclosure. [Figure 3]

[0011] FIG. 1 shows a schematic top view of the interior space of a bake chamber according to at least some embodiments of the present disclosure. [Figure 4]

[0012] 1 shows a flowchart of a method for baking a substrate in a bake chamber according to at least some embodiments of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0010]

[0013] For ease of understanding, the same reference numerals have been used, where possible, to designate identical elements common to the figures. The figures are not drawn to scale and may be simplified for clarity. Elements and features of one embodiment may be beneficially incorporated in other embodiments without further description.

[0011]

[0014] Provided herein is an embodiment of a bake chamber for baking a substrate. The bake chamber is configured to heat the substrate to remove unwanted particles and residues after the substrate has undergone wet cleaning or dry cleaning. The substrate may be, for example, a semiconductor wafer, a photomask, or the like. In the case of a photomask, ammonium sulfate residue or haze may remain on the photomask after wet cleaning or dry cleaning. Heating the photomask to about 70 to about 150°C dissociates the ammonium sulfate residue from the photomask.

[0012]

[0015] The dissociated residue can then be removed from the interior space of the bake chamber. The bake chambers provided herein are advantageously single-space bake chambers configured to dilute the interior space of the bake chamber with an inert gas, allowing the substrate to be heated at atmospheric pressure via convection heating rather than radiant heating. Heating via convection allows the heater within the bake chamber to operate at lower surface temperatures (e.g., about 100 to about 400°C) than heaters configured to heat via radiant heating, which have surface temperatures above about 500°C. At temperatures above about 500°C, particles tend to shed and contaminate the interior space.

[0013]

[0016] FIG. 1 shows a schematic diagram of a multi-chamber processing tool (tool) 100 having a bake chamber 150 in accordance with at least some embodiments of the present disclosure. The tool 100 generally includes a factory interface 102, a transfer chamber 106 connected to the factory interface 102, and multiple processing chambers 105, including a bake chamber 150 connected to the transfer chamber 106. The factory interface 102 includes multiple load ports 104 for receiving one or more substrates 112. The one or more substrates 112 may be semiconductor wafers, carrier substrates, photomasks, etc. In some embodiments, the multiple load ports 104 are disposed along a common side of the factory interface 102. A factory interface robot 110 may be disposed in an interior space 108 of the factory interface 102 to shuttle or transfer the one or more substrates 112 from the multiple load ports 104 to the transfer chamber 106. The fact interface robot 110 may be configured for rotational movement within the interior space 108, lateral movement within the interior space 108, or both.

[0014]

[0017] The transfer chamber 106 is connected to the factory interface 102 and, in some embodiments, is located on the side of the factory interface 102 opposite the plurality of load ports 104. The transfer chamber 106 includes a transfer robot 116 disposed therein for transporting one or more substrates 112 received from the factory interface robot 110 to and from one or more processing chambers 105 connected to the transfer chamber. The transfer robot 116 may be configured for rotational movement, lateral movement, or both. For example, lateral movement may be achieved via rails on the floor of the transfer chamber 106 or via wheels or tracks beneath the transfer robot 116. An arm 122 of the transfer robot 116 may extend or retract to move one or more substrates 112 into or out of each of the plurality of processing chambers 105.

[0015]

[0018] In some embodiments, the transfer robot 116 is configured to receive the one or more substrates 112 directly from the factory interface robot 110. In some embodiments, the transfer robot 116 is configured to receive the one or more substrates 112 indirectly from the factory interface robot 110. For example, in some embodiments, one of the factory interface 102 or the transfer chamber 106 includes a buffer 120 configured to hold one or more of the one or more substrates 112. The transfer robot 116 can be configured to transfer the one or more substrates 112 to the buffer 120. The transfer robot 116 can be configured to transfer the one or more substrates 112 from the buffer 120 to the multiple processing chambers 105 and back from the multiple processing chambers 105 to the buffer 120.

[0016]

[0019] The transfer chamber 106 may have one or more environmental controls. For example, the airflow openings in the transfer chamber 106 may include filters that filter the airflow entering the transfer chamber 106. Other environmental controls may include one or more of humidity control, static control, temperature control, and pressure control.

[0017]

[0020] The one or more processing chambers 105 may be connected orthogonally to the transfer chamber 106 or at an angle to the transfer chamber 106. The multiple processing chambers 105 may be sealingly engaged with the transfer chamber 106. The transfer chamber 106 generally operates at atmospheric pressure, but may be configured to operate at vacuum pressure. The multiple processing chambers 105 are configured to perform one or more processing steps on one or more substrates 112 being processed in the tool 100. For example, the multiple processing chambers 105 may include one or more wet cleaning chambers 130 (three shown in FIG. 1 ) configured to clean the one or more substrates 112 with a liquid, such as water. The multiple processing chambers 105 may include one or more chambers 140 (two shown in FIG. 1 ) configured to perform a dry cleaning process on the one or more substrates 112, for example, via a plasma etching or plasma ashing procedure. The one or more processing chambers 105 include at least one bake chamber, for example, bake chamber 150, configured to heat the one or more substrates to remove residue or haze remaining after a wet or dry cleaning process. In some embodiments, the one or more wet cleaning chambers 130 are located on a different side of the transfer chamber 106 than the one or more dry cleaning chambers 140.

[0018]

[0021] 2 shows a schematic cross-sectional side view of a bake chamber 150 in accordance with at least some embodiments of the present disclosure. The bake chamber 150 may be part of a multi-chamber process tool, such as tool 100, or may be a stand-alone chamber. The bake chamber 150 generally includes a chamber body 202 that encloses an interior space 204. In some embodiments, the interior space 204 is configured to operate at non-vacuum, or atmospheric pressure. The chamber body 202 may be made of a metal, such as aluminum or stainless steel.

[0019]

[0022] A heater 208 is disposed within the interior space 204. In some embodiments, the surface temperature of the heater 208 is between about 100 and about 400°C during use. In some embodiments, the heater 208 comprises a hot plate including one or more resistive heating elements. In some embodiments, the heater 208 comprises one or more infrared (IR) lamps arranged in a suitable pattern. In some embodiments, the heater 208 is configured to heat the substrate 240 to between about 70 and about 150°C.

[0020]

[0023] A substrate support 232 configured to support a substrate 240 is disposed within the interior space 204. In some embodiments, the substrate support 232 is configured to support the substrate 240 between about 0.2 mm and about 3 mm from the heater 208. The substrate 240 can be one of the one or more substrates 112 of FIG. 1. The substrate support 232 has a direct line of sight with the heater 208 such that, during use, heat from the heater 208 can impinge on the substrate support 232 or a substrate 240 disposed on the substrate support via convection. In some embodiments, an edge ring 220 is disposed on the substrate support 232 and configured to surround the substrate 240 to enhance temperature uniformity of the substrate 240. In some embodiments, the substrate support 232 is a simple support configured to support the substrate 240 via gravity and does not include a chucking feature, such as an electrostatic chucking feature or a vacuum chucking feature. In some embodiments, the substrate support 232 does not include a heating feature or a cooling feature. For example, the substrate support 232 does not include cooling channels. In some embodiments, the interior space 204 does not include any other heating elements other than the heater 208. In some embodiments, the heater 208 has an outer diameter or width that is larger than the outer diameter or width of the substrate 240. In some embodiments, the heater 208 is similar in size to the substrate 240 and edge ring 220 combined.

[0021]

[0024] In some embodiments, a lift mechanism 242 is connected to the substrate support 232 and configured to raise or lower the substrate support 232 within the interior space 204. In some embodiments, the substrate support 232 includes one or more lift pin openings 246 configured to facilitate passage of the lift pins 215. In some embodiments, one or more second lift mechanisms 244 are connected to the lift pins 215 and configured to raise or lower the lift pins 215. In some embodiments, the lift pins 215 are connected to the platform 216 and the one or more second lift mechanisms 244 include a single second lift mechanism configured to raise or lower the platform 216 so that the lift pins are raised or lowered together. In some embodiments, the lift pins 215 are connected to respective ones of the one or more second lift mechanisms 244 to independently control the raising or lowering of each of the lift pins 215.

[0022]

[0025] In some embodiments, a gas inlet 212 and a gas outlet 214 are connected to the interior volume 204 to flow an inert gas through the interior volume 204. In some embodiments, the gas inlet 212 is disposed vertically above the gas outlet 214. The gas inlet 212 is connected to a gas source 250 consisting essentially of an inert gas. In some embodiments, the gas source 250 comprises at least about 99.9% inert gas. In some embodiments, the inert gas comprises nitrogen and argon. In some embodiments, the inert gas comprises a mixture of inert gases. In some embodiments, the gas inlet 212 and the gas outlet 214 are disposed on opposite sides of the chamber body 202 and configured to flow the inert gas across the heater 208. In some embodiments, a gas inlet valve 224 is disposed between the gas inlet 212 and the gas source 250 to selectively flow the inert gas into the interior volume 204.

[0023]

[0026] In some embodiments, the gas outlet 214 is fluidly connected to a gas line 248 that extends outside the chamber body 202. In some embodiments, the gas line 248 is connected to a vacuum pump 230. In some embodiments, the gas line 248 includes a vacuum valve 236 disposed between the vacuum pump 230 and the gas outlet 214. The vacuum valve 236 can be selectively opened and closed to evacuate the interior space 204. The gas inlet valve 224 can be selectively opened and closed to fill the evacuated interior space 204 with an inert gas. By selectively evacuating the interior space 204 and replacing the air with an inert gas from the gas source 250, the air within the interior space 204 can be advantageously flushed out or diluted until the interior space 204 is composed essentially of an inert gas, for example, about 99.9999% or more of an inert gas. Thus, the interior volume 204 may be purged one or more times via the gas inlet valve 224 and the vacuum valve 236 until the partial pressure of the undesired gases within the interior volume 204 is at a desired level, for example, less than about 800 mTorr. In some embodiments, the undesired gases may include oxygen, water vapor, ammonium, or sulfur dioxide.

[0024]

[0027] FIG. 3 is a schematic top view of the interior space 204 of the bake chamber 150 in accordance with at least some embodiments of the present disclosure. In some embodiments, the substrate 112 is a photomask having a square shape. In some embodiments, the edge ring 220 has a central opening 302 for accommodating the substrate 112. In some embodiments, the edge ring 220 has a square shape. In some embodiments, the central opening 302 is square. In some embodiments, the edge ring 220 has a round shape with a square central opening 302. In some embodiments, the edge ring 220 has a width 306 from the outer sidewall of the edge ring 220 to the central opening 302 that is between about 1.5 inches and about 3.0 inches. The edge ring 220 extends the bake surface of the substrate 112 and advantageously promotes temperature uniformity of the substrate 112 across the substrate 112. In some embodiments, the thickness of the edge ring 220 is similar to the thickness of the substrate 112. In some embodiments, the edge ring 220 is made of a similar or identical material to the substrate 112. In some embodiments, the outer diameter of the heater 208 is larger than the outer diameter of the edge ring 220 .

[0025]

[0028] FIG. 4 shows a flowchart of a method 400 for baking a substrate (e.g., substrate 240) in a bake chamber (e.g., bake chamber 150) in accordance with at least some embodiments of the present disclosure. The method includes, at 402, placing a substrate on a support (e.g., substrate support 232) in an interior space (e.g., interior space 204) of the bake chamber. The substrate may be placed in the bake chamber via a transfer slot (e.g., transfer slot 218). The substrate may be placed in the bake chamber manually or via a transfer robot (e.g., transfer robot 116). In some embodiments, the substrate may first be placed on one or more lift pins (e.g., lift pins 215) elevated relative to the support. The one or more lift pins may then be lowered to place the substrate on the support. In some embodiments, the substrate is placed in an edge ring (e.g., edge ring 220) disposed on the support. In some embodiments, the substrate is a photomask.

[0026]

[0029] At 404, the method includes opening a vacuum valve (e.g., vacuum valve 236) to pump down the interior space of the bake chamber to a vacuum pressure via a vacuum pump (e.g., vacuum pump 230). Pumping down the interior space to a vacuum pressure dilutes or removes unwanted gases from the interior space that may react with the dissociated residue, such as oxygen gas, water vapor, sulfur dioxide, ammonium, etc.

[0027]

[0030] At 406, the method includes closing the vacuum valve and opening a gas inlet valve (e.g., gas inlet valve 224) to fill the interior space with an inert gas. The inert gas may be supplied via a gas source (e.g., gas source 250). In some embodiments, filling the interior space with the inert gas further includes maintaining a partial pressure of one or more of oxygen gas, water vapor, sulfur dioxide gas, or ammonium within the interior space at a desired level. In some embodiments, the desired level is a concentration of less than or equal to 1 part per million (ppm). The gas inlet valve 224 may be closed after filling the interior space with the inert gas.

[0028]

[0031] In some embodiments, if the desired partial pressure is not achieved after the initial pump-down and inert gas fill, the gas inlet valve is closed and the vacuum valve is reopened to evacuate the interior space. In some embodiments, the vacuum valve is closed and the gas inlet valve is opened to refill the interior space with additional inert gas, and the gas inlet valve is closed once the refill is complete. The pump-down and refill process can be repeated one or more times in the manner described above until the partial pressure of one or more of oxygen gas, water vapor, sulfur dioxide gas, and ammonium within the interior space is at the desired level.

[0029]

[0032] At 408, the method 300 includes baking the substrate via convection using a heater (e.g., heater 208) disposed in the interior space of the bake chamber to dissociate residues on the substrate. In some embodiments, the interior space is maintained at atmospheric pressure during baking. In some embodiments, baking the substrate includes heating the substrate to a temperature of about 70 to about 150°C. In some embodiments, the bake time can be about 1 minute to about 15 minutes. Once baking is complete, the substrate can be removed from the bake chamber via a transfer slot.

[0030]

[0033] While the forgoing is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from the basic scope thereof.

Claims

1. 1. A multi-chamber process tool for processing a substrate, comprising: a wet cleaning chamber for cleaning the substrate; a bake chamber configured to heat the substrate to remove any residue or haze remaining after a wet cleaning process performed in the wet cleaning chamber; The baking chamber comprises: a chamber body surrounding an internal space; a heater disposed in the interior space, the heater configured to have a surface temperature of about 100 to about 400°C during use; a substrate support configured to support a substrate disposed in the interior space, the substrate support having a direct line of sight with the heater such that the heater heats the substrate support via convection; a gas inlet and a gas outlet connected to the interior space and disposed on opposite side walls of the chamber body; the gas inlet is disposed vertically above the gas outlet, and the gas inlet and the gas outlet are disposed above a transfer slot of the bake chamber, and the heater is disposed vertically between the gas inlet and the gas outlet. Multi-chamber process tool.

2. 10. The multi-chamber process tool of claim 1, further comprising an edge ring disposed on the substrate support and configured to surround the substrate.

3. 3. The multi-chamber process tool of claim 2, wherein the substrate is a photomask, and the edge ring has a square central opening configured to receive the photomask during use.

4. 10. The multi-chamber process tool of claim 1, wherein the substrate support is configured to support the substrate by gravity and does not include an electrostatic chuck or a vacuum chuck.

5. The multi-chamber process tool of claim 1 , wherein the heater comprises a hot plate including one or more resistive heating elements.

6. The multi-chamber process tool of claim 1 , wherein the heater has an outer diameter that is larger than an outer diameter of the substrate.

7. a vacuum pump connected to the gas outlet; a vacuum valve disposed between the vacuum pump and the gas outlet; a gas supply connected to the gas inlet; a gas inlet valve disposed between the gas source and the gas inlet; The multi-chamber process tool of claim 1 , further comprising:

8. 8. The multi-chamber process tool of claim 7, wherein the gas source comprises essentially an inert gas.

9. A baking chamber for baking a photomask, comprising: a chamber body surrounding an internal space; a heater disposed in the interior space, the heater configured to have a surface temperature of about 100 to about 400°C during use; a substrate support configured to support a photomask disposed in the interior space, the substrate support having a direct line of sight with the heater such that the heater heats the substrate support via convection; a gas inlet and a gas outlet connected to the interior space and disposed on opposite side walls of the chamber body; wherein the gas inlet is disposed vertically above the gas outlet, and the gas inlet and the gas outlet are disposed above a transfer slot of the bake chamber, and the heater is disposed vertically between the gas inlet and the gas outlet.

10. The bake chamber of claim 9, wherein the substrate support is configured to support the photomask from about 0.2 mm to about 3 mm from the heater.

11. The bake chamber of claim 9, wherein the heater is configured to heat the photomask to about 70 to about 150 degrees.

12. 11. The bake chamber of claim 10, further comprising an edge ring disposed on the substrate support and configured to surround the photomask, the photomask being square, the edge ring including a square central opening configured to receive the photomask, and the heater being sized equal to or larger than an outer dimension of the edge ring.

13. 13. The bake chamber of claim 12, wherein the edge ring has a width from an outer sidewall of the edge ring to the central opening of about 1.5 inches to about 3.0 inches.

14. The bake chamber of claim 9 , wherein the substrate support includes one or more lift pin openings.

15. The bake chamber of claim 9 , wherein the substrate support does not include any heating or cooling features.

16. 10. The bake chamber of claim 9, further comprising a gas supply connected to the gas inlet, the gas inlet connected to a gas supply consisting essentially of an inert gas.

17. 10. The bake chamber of claim 9, wherein the heater comprises one or more infrared (IR) lamps instead of heating the substrate support via convection.

18. 10. The bake chamber of claim 9, wherein the gas outlet is the only gas outlet for the bake chamber, the gas inlet is the only gas inlet for the bake chamber, and the gas outlet is located above a support surface of the substrate support.

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