High-side switches, electronic devices, and vehicles

The high-side switch incorporates a reverse connection protection circuit with transistors and diodes to address breakdown risks from reverse bias, ensuring operational reliability by controlling current flow and gate voltage.

JP7727441B2Active Publication Date: 2025-08-21ROHM CO LTD
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Patent Information

Application Number
JP2021133811
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Filing Date
2021-08-19
Publication Date
2025-08-21
Estimated Expiration
2041-08-19

AI Technical Summary

Technical Problem

High-side switches are vulnerable to breakdown due to reverse bias voltage applied between the power supply terminal and the ground terminal, leading to current flow through parasitic diodes and potential destruction of the output transistor.

Method used

Incorporation of a reverse connection protection circuit that includes transistors and diodes to prevent current flow when a reverse bias occurs, utilizing a charging unit to turn on the output transistor and a cutoff unit to block current paths, along with a limiting unit to control gate voltage, thereby preventing breakdown.

Benefits of technology

Prevents breakdown of the high-side switch by maintaining operational integrity when a reverse bias voltage is applied, reducing heat generation and protecting the output transistor.

✦ Generated by Eureka AI based on patent content.

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Patent Text Reader

Abstract

To provide a high-side switch capable of preventing breakdown when a reverse bias voltage is applied between a power terminal and a ground terminal.SOLUTION: A high-side switch 100 includes: a power terminal VBB, an output terminal OUT, and a ground terminal GND; a first transistor Q1 configured to be connected between the power terminal VBB and the output terminal OUT; a control circuit 4 configure to generate a first drive signal VG1 applied to a control edge of the first transistor Q1; and a reverse connection protective circuit 20 configured to conduct between the power terminal VBB and the output terminal OUT without depending on the first drive signal VG1 when the power terminal VBB is at a lower potential than that of the ground terminal GND.SELECTED DRAWING: Figure 7
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Citation Information

Patent Citations

  • High-side switch circuit

    JP2000307397A

  • Load driving device

    JP2011101187A

  • High-side switch

    JP2020202438A