Non-volatile memory device

Abstract

To erase stored data more efficiently.SOLUTION: A nonvolatile memory device (100_1) includes a substrate (200), a selection gate (204), a control gate (240), a planar floating gate (224), a coupling dielectric layer (238), an erase gate dielectric layer (234), and an erase gate (236), and the first thickness (T1) of the coupling dielectric layer (238) and the second thickness (T2) of the erase gate dielectric layer (234) satisfy the relationship (T2)<(T1)<2(T2).SELECTED DRAWING: Figure 3

Description

Detailed Description of the Invention

[0001] (Background technology) (1. Technical Field) The present invention relates to a semiconductor device, and more particularly to a nonvolatile memory device and a method for manufacturing the same.

[0002] (2. Description of the Prior Art) Non-volatile memory is widely used in personal computers and electronic devices because it can repeatedly perform operations such as storing, reading, and erasing data, and the stored data is not lost after the non-volatile memory is shut down.

[0003] A conventional nonvolatile memory has a stacked gate structure including a tunnel oxide layer, a floating gate, a coupling dielectric layer, and a control gate, in that order. When performing a program or erase operation on such a flash memory device, appropriate voltages are applied to the source region, drain region, and control gate, respectively, to inject or extract electrons from the floating gate.

[0004] In the program and erase operations of nonvolatile memories, a larger gate coupling ratio (GCR) between the floating gate and the control gate generally means that a lower operating voltage is required for operation, thereby significantly increasing the operating speed and efficiency of the flash memory. However, during the program or erase operation, electrons must be injected into or extracted from the floating gate through a tunnel oxide layer disposed below the floating gate, which often damages the structure of the tunnel oxide layer and therefore reduces the reliability of the memory device.

[0005] In order to improve the reliability of the memory device, an erase gate is adopted and incorporated in the memory device, and electrons can be extracted from the floating gate by applying a positive voltage to the erase gate. In this way, electrons in the floating gate are extracted through the tunneling oxide layer disposed above the floating gate rather than through the tunneling oxide layer disposed below the floating gate, thereby further improving the reliability of the memory device.

[0006] As the demand for highly efficient memory devices that can erase stored data more efficiently increases, there remains a need to provide improved memory devices and methods for manufacturing the same.

[0007] (Prior art document) (Patent Document 1) U.S. Patent Application Publication No. 2021 / 0408119 A1 (Patent Document 2) U.S. Patent Application Publication No. 2014 / 0042383 A1 (Patent Document 3) U.S. Patent Application Publication No. 2012 / 0295413 A1 (Patent Document 4) U.S. Patent Application Publication No. 2013 / 0112935 A1 (Patent Document 5) Russian Patent Publication No. 2 297 625 C1 (Patent Document 6) U.S. Patent Application Publication No. 2016 / 0336415 A1 (Patent Document 7) U.S. Patent Application Publication No. 2016 / 0365350 A1 (Patent Document 8) U.S. Patent Application Publication No. 2013 / 0026552 A1 (Patent Document 9) U.S. Patent Application Publication No. 2016 / 0358928 A1 (Patent Document 10) Taiwan Patent Publication No. 202114174 Specification A (Patent Document 11) Taiwan Patent Publication No. 201644037 Specification A (Patent Document 12) Taiwan Patent Publication No. 201633319 Specification A (Patent Document 13) Taiwan Patent Publication No. 201839770 Specification A (Patent Document 14) U.S. Patent Application Publication No. 2013 / 0313626 A1 (Patent Document 15) U.S. Patent Application Publication No. 2021 / 0384205 A1 (Patent Document 16) U.S. Patent Application Publication No. 2017 / 0040334 A1 (Patent Document 17) U.S. Patent Application Publication No. 2004 / 0041202 A1 (Patent Document 18) U.S. Patent Application Publication No. 2006 / 0205136 A1 (Patent Document 19) U.S. Patent Application Publication No. 2011 / 0281427 A1 (Patent Document 20) U.S. Patent Application Publication No. 2005 / 0269624 A1 (Patent Document 21) U.S. Patent Application Publication No. 2003 / 0162347 A1 (Patent Document 22) Russian Patent Publication No. 2 216 821 C2 (Summary of the Invention) The present invention provides a non-volatile memory device and a method for manufacturing the non-volatile memory device, which allows for more efficient erasure of stored data.

[0008] According to some embodiments of the present disclosure, a non-volatile memory device includes at least one memory cell, the memory cell including a substrate, a select gate, a control gate, a planar floating gate, a bonding dielectric layer, an erase gate dielectric layer, and an erase gate. The select gate is disposed on the substrate. The control gate is disposed on the substrate and laterally spaced apart from the select gate, the control gate including a non-vertical surface. The planar floating gate is disposed between the substrate and the control gate, the planar floating gate including lateral extremities laterally spaced apart from the control gate. The bonding dielectric layer is disposed between the control gate and the planar floating gate, the bonding dielectric layer including a first thickness. The erase gate dielectric layer covers the non-vertical surfaces of the control gate and the lateral extremities of the planar floating gate, and the erase gate dielectric layer includes a second thickness. The erase gate covers the erase gate dielectric layer and the lateral extremities of the planar floating gate. To generate a favorable electric field for tunneling electrons from the planar floating gate during an erase operation, the first thickness and the second thickness may satisfy the following relationship: (T2)<(T1)<2(T2), where T1 represents the first thickness of the coupling dielectric layer and T2 represents the second thickness of the erase gate dielectric layer.

[0009] According to some embodiments of the present disclosure, a method for manufacturing a non-volatile memory device includes providing a substrate; forming a floating gate layer on the substrate, the floating gate layer having a select gate layer laterally spaced from the floating gate layer; forming a control gate covering sidewalls of the select gate layer and the floating gate layer, the control gate including a non-vertical surface; etching the floating gate layer using the control gate as an etch mask to form a planar floating gate, the planar floating gate including lateral tips laterally spaced from the control gate; and forming an erase gate covering the non-vertical surfaces of the control gate and the lateral tips of the planar floating gate.

[0010] These and other objects of the present invention will no doubt become obvious to those skilled in the art after reading the following detailed description of the preferred embodiment that is illustrated in the various figures and drawings.

[0011] BRIEF DESCRIPTION OF THE DRAWINGS The drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention.

[0012] FIG. 1 is a schematic top view of a nonvolatile memory device according to one embodiment of the present disclosure.

[0013] FIG. 2 is a schematic cross-sectional view of a non-volatile memory device taken along line AA' of FIG. 1, according to one embodiment of the present disclosure.

[0014] FIG. 3 is a schematic cross-sectional view of a region of the non-volatile memory device of FIG. 2, according to one embodiment of the present disclosure.

[0015] FIG. 4 is a schematic cross-sectional view of a non-volatile memory device taken along lines BB' and CC' of FIG. 1, according to one embodiment of the present disclosure.

[0016] FIG. 5 is a schematic cross-sectional view of a nonvolatile memory device according to another embodiment of the present invention, taken along line AA' of FIG.

[0017] 6A-6E are schematic diagrams of a method for fabricating the non-volatile memory device of FIGS. 1-4 at various stages of fabrication, according to one embodiment of the present disclosure.

[0018] 7A-7C are schematic cross-sectional views of various stages of fabrication in a method for fabricating the non-volatile memory device of FIGS. 1 and 5, according to one embodiment of the present disclosure.

[0019] (Detailed explanation) The following disclosure provides many different embodiments or examples for implementing different features of the present disclosure. Below, specific examples of components and configurations are described to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature in the following description can include embodiments in which the first and second features are formed in direct contact with each other, and can also include embodiments in which an additional feature may be formed between the first and second features such that the first and second features are not in direct contact with each other. In addition, the present disclosure may repeat reference numerals and / or letters in various examples. This repetition is for simplicity and clarity and does not, in itself, dictate a relationship between the various embodiments and / or configurations discussed.

[0020] Additionally, spatially relative terms such as "below," "below," "bottom," "under," "above," "over," "upper," "further," "bottom," and "top" may be used herein for ease of description to describe the relationship of one element or feature to another, as shown in the figures. Spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation shown in the figures. For example, if the device in the figures is turned upside down, elements described as "below" and / or "under" other elements or features would be oriented "above" and / or "over" the other elements or features. The device may be in other orientations (rotated 90 degrees or at other orientations), and the spatially relative descriptors used herein may likewise be interpreted accordingly.

[0021] Although the present disclosure has been described with respect to particular embodiments, the principles of the present disclosure, as defined by the claims appended hereto, can clearly be applied beyond the specifically described embodiments of the present disclosure described herein. Moreover, in the description of the present disclosure, certain details have been omitted so as not to obscure the inventive aspects of the present disclosure. The omitted details are within the knowledge of one of ordinary skill in the art.

[0022] 1 is a schematic top view of a nonvolatile memory device according to one embodiment of the present disclosure. Referring to FIG. 1, nonvolatile memory device 100_1 may be a NOR flash memory device including at least one memory cell, such as four memory cells housed in first, second, third, and fourth memory cell regions 110, 112, 114, and 116, respectively. The structures of first memory cell region 110 and second memory cell region 112 are mirror images of each other, and the structures of third memory cell region 114 and fourth memory cell region 116 are mirror images of each other. According to one embodiment of the present disclosure, nonvolatile memory device 100_1 includes four or more memory cells, which may be arranged in an array having multiple rows and columns.

[0023] 1, the nonvolatile memory device includes a substrate 200 and an isolation structure 102. The substrate 200 may be a semiconductor substrate such as, but not limited to, a silicon substrate or an SOI (silicon-on-insulator) substrate. The isolation structure 102 may be made of an insulating material and is used to define an active area 103 of a memory cell.

[0024] Each of the memory cells includes a source region 222 and a drain region 244 disposed within an active region 103 defined by an isolation structure 102. The source region 222 and the drain region 244 may be doped regions of the same conductivity type, such as n-type or p-type. The conductivity type of the source region 222 and the drain region 244 may be different from the conductivity type of the substrate 200 or different from the conductivity type of a doped well (not shown) used to contain the source region 222 and the drain region 244. The source region 222 is disposed at one end of the active region 103, and the drain region 244 is disposed at the other end of the active region 103. According to some embodiments of the present disclosure, the source region 222 is a continuous region extending along the Y direction and shared by memory cells in the same column.

[0025] Each memory cell may further include a select gate 206 disposed on the substrate 200 and adjacent to the drain region 244. The select gate 204 extends along the Y direction and may be shared by memory cells located in the same column. The select gate 204 may be made of a conductive material such as polysilicon or metal, and may act as a word line configured to turn on / off the channel regions of memory cells located below the word line. Thus, the channel regions of memory cells in the same column may be turned on or off simultaneously.

[0026] To insulate the select gate 204 from other conductive components, dielectric spacers 212 may be disposed on the sidewalls of the select gate 204. The dielectric spacers 212 may be, but are not limited to, single-layer, double-layer, or multi-layer spacers disposed on each sidewall of the select gate 204.

[0027] Each memory cell also includes a planar floating gate 224 disposed on the substrate 200 and adjacent to the source region 222. Thus, the planar floating gate 224 is disposed on one side of the select gate 204, and the drain region 244 is disposed on the other side of the select gate 204. The floating gates 224 are fabricated from a conductive material, such as polysilicon or another semiconductor. The floating gates 224 are spaced apart from one another so that charges stored in the floating gates 224 are not directly transferred between adjacent floating gates 224. Because the floating gates 224 are spaced apart from one another, each of the planar floating gates 224 can be independently programmed or erased, thereby determining the state of each memory cell, such as a "1" state or a "0" state. As shown in the cross-sectional views below, such as FIGS. 2 and 3, each planar floating gate 224 is a planar floating gate having a substantially flat upper surface. The detailed structure of the planar floating gates 224 is described in the accompanying descriptions of FIGS. 2 and 3.

[0028] Each memory cell also includes a control gate 240 disposed on the substrate 200 and adjacent to the source region 222. The control gate 240 extends along the Y direction and may be shared by memory cells in the same column. Thus, the floating gate 224 may be covered by the control gate 240 in the same column. Furthermore, the planar floating gate 224 may partially protrude from the control gate 240 toward the boundary between adjacent memory cell regions in the same row. The control gate 240 may be made of a conductive material such as polysilicon or metal, and the control gate 240 is configured to create hot carriers (e.g., electrons) that are injected from the channel region into the corresponding planar floating gate 224.

[0029] The nonvolatile memory device 100_1 further includes an erase gate 236 extending along the Y direction. Furthermore, the erase gate 236 may be a continuous layer that fills a gap at the boundary between adjacent memory cell regions in the same row (such as a gap between two adjacent floating gates 224 in the same row). Thus, the erase gate 236 may cover at least two floating gates 224 and two control gates 240 in the first memory cell region 110 and the second memory cell region 112. In an erase operation of the nonvolatile memory 100, the erase gate 236 is biased, which causes electrons stored in the planar floating gate 224 to be extracted primarily through side edges (not shown) of the planar floating gate 224. The positions and arrangements of the side edges of the planar floating gate 224 will be described in detail below.

[0030] FIG. 2 is a schematic cross-sectional view of a nonvolatile memory device taken along line AA′ in FIG. 1 according to some embodiments of the present disclosure. Referring to FIG. 2, the planar floating gate 224 is a planar floating gate disposed between a substrate 200 and a control gate 240. The planar floating gate 224 includes a protruding portion 232 exposed from the control gate 240. The planar floating gate 224 also includes a lateral tip 226 a corresponding to an upper corner of the protruding portion 232 and spaced laterally from the control gate 240. During an erase operation, electrons stored in the planar floating gate 224 can be extracted primarily through the lateral tip 226 a of the planar floating gate 224. Furthermore, the planar floating gate 224 further includes two opposing first sidewalls 230_1. The first sidewalls 230_1 are opposed to each other and arranged along a first direction, e.g., the X direction, and one of the first sidewalls 230_1 is connected to the lateral tip 226 a of the planar floating gate 224.

[0031] A control gate 240 is disposed on the substrate 200 and is laterally spaced from the select gate 204. The control gate 240 includes a non-vertical surface 246, such as a sloped or curved surface. For example, the non-vertical surface 246 is a convex surface.

[0032] The erase gate 236 is a continuous layer that extends from the first memory cell region 110 to the second memory cell region 112. The erase gate 236 covers a portion of the non-vertical surface 246 of the control gate 240 and the side tip 226a of the planar floating gate 224. Because the erase gate 236 partially covers the non-vertical surface 246 of the control gate 240, that portion of the bottom surface of the erase gate 236 is curved.

[0033] The erase gate 236 fills the gap at the boundary between the first memory cell region 110 and the second memory cell region 112. Because the curved sidewall 239_2 of the end 242 of the bonding dielectric layer 238 has a concave surface, the corresponding portion of the erase gate 236 may include a protruding portion 250 extending toward the curved sidewall 239_2 (e.g., the concave sidewall) of the end 242 of the bonding dielectric layer 238. The protruding portion 250 of the erase gate 236 may cover the side tip 226a of the planar floating gate 224, thereby partially wrapping the erase gate 236 around the side tip 226a of the planar floating gate 224. This allows electrons originally stored in the planar floating gate 224 to be more effectively extracted from the side tip 228a of the planar floating gate 224.

[0034] The erase gate 236 also includes a planar upper surface that covers the non-vertical surface 246 of the control gate 240, and the erase gate 236 is laterally spaced from the select gate 204. The height of the erase gate 236 may be up to 20% higher or even lower than the height of the select gate 204, allowing the non-volatile memory device 110_1 to be easily integrated with other semiconductor devices, such as MOSFETs, in a digital circuit. This allows the non-volatile memory device 110_1 and other semiconductor devices in a digital circuit to be fabricated simultaneously without significantly adjusting or modifying the semiconductor device manufacturing process.

[0035] The non-volatile memory device 100_1 further includes a coupling dielectric layer 238 disposed between the control gate 240 and the planar floating gate 224. The coupling dielectric layer 238 is a composite dielectric layer including, but not limited to, silicon oxide / silicon nitride / silicon oxide.

[0036] The coupling dielectric layer 238 is an L-shaped coupling dielectric layer including a vertical portion 238_1 and a horizontal portion 238_2. The vertical portion 238_1 of the coupling dielectric layer 238 is disposed between the control gate 240 and the vertical portion 224_1 of the planar floating gate 224. The vertical portion 238_1 of the coupling dielectric layer 238 includes, but is not limited to, a curved upper surface 239_1. The horizontal portion 238_2 is disposed between the control gate 240 and the horizontal portion 224_2 of the planar floating gate 224, and an end 242 of the horizontal portion 238_2 of the coupling dielectric layer 238 extends from below the control gate 240 and is exposed from the control gate 240. The end 242 of the horizontal portion 238_2 of the coupling dielectric layer 238 includes a curved sidewall 239_2 exposed from the control gate 240. The curved sidewall 239_2 is concave and in direct contact with the erase gate dielectric layer 234.

[0037] The nonvolatile memory device 100_1 further includes an erase gate dielectric layer 234 disposed between the erase gate 236 and the planar floating gate 224 and between the erase gate 236 and the control gate 240. The erase gate dielectric layer 234 can be made of a dielectric layer that allows electrons initially stored in the planar floating gate 224 to pass through it by a Fowler-Nordheim (FN) tunneling mechanism. In some embodiments, the erase gate dielectric layer 234 is a continuous layer extending from the first memory cell region 110 and the second memory cell region 112. Furthermore, the top surface of the select gate 204 and the top tip of the control gate 240 can be covered with the erase gate dielectric layer 234. During a programming operation, hot electrons can pass through the floating gate dielectric layer 218 and accumulate in the planar floating gate 224.

[0038] The dielectric spacer 212 is disposed on one of the sidewalls of the select gate 204. In some embodiments of the present disclosure, the dielectric spacer 212 includes a concave upper surface 213.

[0039] The nonvolatile memory device 100_1 further includes a select gate dielectric layer 202 disposed between the substrate 200 and the select gate 204. Based on different requirements, the composition of the select gate dielectric layer 202 may be the same as or different from the composition of the floating gate dielectric layer 218.

[0040] FIG. 3 is a schematic cross-sectional view of a region of the nonvolatile memory device of FIG. 2 according to some embodiments of the present disclosure. The structure shown in FIG. 3 corresponds to region R1 of the structure shown in FIG. 2. Referring to FIG. 3, the lateral tip 226a of the planar floating gate 224 can be covered with a thin layer of a coupling dielectric layer 238. For example, the thickness of the coupling dielectric layer 238 covering the lateral tip 226a of the planar floating gate 224 can be on the order of 5 angstroms to 30 angstroms, but is not limited thereto. To more efficiently erase charges stored in the planar floating gate 224, the lateral tip 226a may not be covered with any coupling dielectric layer 238. Thus, the lateral tip 226a is in direct contact with the erase gate dielectric layer 234.

[0041] The horizontal portion 238_2 of the coupling dielectric layer 238 includes a curved sidewall 239_2, such as a concave sidewall. The contour of the curved sidewall 239_2 can affect the contour of the corresponding portion of the erase gate 236. For example, as the curvature of the curved sidewall 239_2 increases, the protrusion 250 of the erase gate 236 can protrude more toward the curved sidewall 239_2 of the coupling dielectric layer 238. Therefore, not only the side tip 226a but also the region of the planar floating gate 224 adjacent to the side tip 226a is covered by the protrusion 250 of the erase gate 236. This can further improve erase efficiency.

[0042] The erase gate dielectric layer 234 substantially conformally covers the control gate 240, the curved sidewall 239_2 of the bonding dielectric layer 238, and the first sidewall 230_1 of the planar floating gate 224. Because the portion of the curved sidewall 239_2 of the bonding dielectric layer 238 is covered by the control gate 240, the portion of the erase gate dielectric layer 234 that is in direct contact with the bonding dielectric layer 238 can be disposed between the control gate 240 and the planar floating gate 224.

[0043] The curvature and contour of the protrusion 250 of the erase gate 236 can be appropriately controlled to generate a favorable electric field for tunneling electrons from the planar floating gate 224 during an erase operation. The relationship between the thickness (also referred to as the first thickness) T1 of the coupling dielectric layer 238 and the thickness (also referred to as the second thickness) T2 of the erase gate dielectric layer 234 is given by: (T2)<(T1)<2(T2), The equation is satisfied.

[0044] where T1 represents the average thickness of the coupling dielectric layer 238 covered by the control gate 240, and T2 represents the average thickness of the erase gate dielectric layer 234 on the first sidewall 230_1 of the planar floating gate 224.

[0045] When the first thickness T1 of the coupling dielectric layer 238 is less than the second thickness T2 of the erase gate dielectric layer 234, the corresponding erase gate dielectric layer 234 is less likely to fill the space between the control gate 240 and the planar floating gate 224. Therefore, the protrusion 250 of the erase gate 236 can protrude less, and therefore the side tip 226a of the planar floating gate 224 is no longer covered by the protrusion 250. This reduces the ease of filling.

[0046] In contrast, when the first thickness T1 of the coupling dielectric layer 238 is greater than twice the second thickness T2 of the erase gate dielectric layer 234, the corresponding erase gate dielectric layer 234 is more likely to fill the space between the control gate 240 and the planar floating gate 224. This results in a pointed end of the protrusion 250 of the erase gate 236. During operation of the nonvolatile memory device 100_1, electrons are emitted from the pointed end of the protrusion 250, and positive charges are accumulated on the protrusion 250, adversely affecting the electrical characteristics of the nonvolatile memory device 100_1.

[0047] 4 is a schematic cross-sectional view of a nonvolatile memory device taken along lines BB' and CC' in FIG. 1 according to some embodiments of the present disclosure. Referring to view BB' in FIG. 4, the control gate 240 and the erase gate 236 may be disposed on the isolation structure 102, and the control gate 240 may be disposed between the erase gate 236 and the isolation structure 102. Also, the isolation structure 102 shown in FIG. 4 is not covered by the planar floating gate 224. The coupling dielectric layer 238 is an L-shaped layer disposed on the isolation structure 102.

[0048] 4, the planar floating gate 224 includes two second sidewalls 230_2 facing each other and arranged along a second direction different from the first direction, e.g., the Y direction. The control gate 240 extends along the second direction and covers the second sidewalls 230_2 of the planar floating gate 224. Furthermore, the second sidewalls 230 may be covered with a coupling dielectric layer 238. The control gate 240 shown in view CC' is not covered by an erase gate (not shown).

[0049] 5 is a schematic cross-sectional view of a nonvolatile memory device according to another embodiment of the present invention, corresponding to line AA' in FIG. 1. Referring to FIG. 5, the nonvolatile memory device 100_2 shown in FIG. 3 is similar to the nonvolatile memory device 100_1 shown in FIG. 2, with the main difference being that the coupling dielectric layer 238 has only a horizontal portion 238_2, and the vertical portion shown in FIG. 2 is omitted. This allows the entire top surface of the coupling dielectric layer 238 to be covered with the control gate 240. Furthermore, the end 242 of the coupling dielectric layer 238 still includes a curved sidewall 239_2, and a portion of the curved sidewall 239_2 protrudes from the control gate 240.

[0050] 6A-6E are schematic diagrams of a method for fabricating the non-volatile memory device of FIGS. 1-4 at various stages of manufacture, according to some embodiments of the present disclosure.

[0051] 6A, in step 602, a substrate 200 is provided. Next, a floating gate dielectric layer 218, a floating gate layer 254, and an etching mask 256 are sequentially stacked on the substrate 200. Then, the floating gate dielectric layer 218 and the floating gate layer 254 can be formed by a deposition process and an etching process. During the etching process, the pattern of the etching mask 256 can be transferred to the floating gate dielectric layer 218 and the floating gate layer 254. Furthermore, after the etching process, the floating gate dielectric layer 218 and the floating gate layer 254 can extend along the Y direction (also referred to as the second direction) in a top view.

[0052] Dielectric spacers 212 are then formed on the sidewalls of the floating gate layer 254, the floating gate dielectric layer 218, and the etch mask 256. A select gate dielectric layer 202 is formed on the substrate 200 on two sides of the floating gate dielectric layer 218.

[0053] Next, in step 604, select gate layers 264 are formed on the substrate 200 on both sides of the floating gate dielectric layer 218. The select gate layer 264 is laterally spaced from the floating gate layer 254. In subsequent steps, the select gate layer 264 may be further patterned or modified to function as a select gate for the non-volatile memory device. A method for forming the select gate layer 264 may include the following steps. For example, a conductive layer (not shown) is deposited on the substrate 200 to cover the etching mask 256. Next, a planarization process is performed on the conductive layer to planarize the top surface of the conductive layer until the top edge of the etching mask 256 is exposed. After the formation of the select gate layer 264, the etching mask 256 may be removed to expose the top surface of the floating gate layer 254.

[0054] Then, photolithography and etching processes are performed to etch the floating gate layer 254 and the floating gate dielectric layer 218. As a result, the floating gate layer 254 and the floating gate dielectric layer 218 can be patterned to form a plurality of stripe-shaped structures (not shown) arranged along the Y direction and separated from each other in a top view. Each of the stripe-shaped structures can extend along the X direction into both the first memory cell region 110 and the second memory cell region 112.

[0055] 6B, in step 606, a bonding dielectric layer 248 is formed on the substrate 200 to conformally cover the select gate layer 264 and the floating gate layer 254. Because the floating gate layer 254 has a stripe shape in a top view, the bonding dielectric layer 248 covers not only the top surface of the floating gate layer 254 but also the sidewalls (not shown) of the floating gate layer 254. The bonding dielectric layer 248 can be a composite dielectric layer including, but not limited to, silicon oxide / silicon nitride / silicon oxide.

[0056] Next, a control gate layer 240 is disposed on the coupling dielectric layer 248. The thickness of the control gate layer 240 can be appropriately controlled so that the control gate layer 240 conforms to the shape of the underlying structure. The control gate layer 240 can be formed of a conductive material such as, but not limited to, polysilicon or metal.

[0057] Then, in step 608, the control gate layer 240 is etched by an anisotropic etching process, thereby forming the control gate 240 on the sidewalls of the select gate layer 264 and on the top surface of the floating gate layer 254. The control gate 240 is a self-aligned structure having non-vertical surfaces 246, and therefore does not require the use of photolithography processes. After the control gate 240 is formed, the control gates 240 in each of the first memory cell region 110 and the second memory cell region 112 can be laterally separated from each other in the X-direction. Furthermore, after the control gate 240 is formed, portions of the coupling dielectric layer 248 disposed above the select gate layer 264 can be exposed from the control gate 240.

[0058] 6C , in step 610, an anisotropic etching process is performed on the coupling dielectric layer 248 using the control gate layer 240 as an etching mask to form an L-shaped coupling dielectric layer 238 including a vertical portion 238_1 and a horizontal portion 238_2. The vertical portion 238_1 is disposed between the control gate 240 and the select gate layer 264. The horizontal portion 238_2 is disposed between the control gate 240 and the substrate 200. By appropriately controlling the etching recipe and the type or ratio of etchants, the top surface 239_1 of the vertical portion 238_1 can be flat or concave, lower than the top tip of the control gate 240. The horizontal portion 238_2 of the coupling dielectric layer 238 also includes an end portion 242 that extends from and is exposed from the control gate 240. An end 242 of the horizontal portion 238_2 of the coupling dielectric layer 238 includes a curved sidewall 239_2 that extends and is exposed from the control gate 240. After forming the coupling dielectric layer 238 including the vertical portion 238_1 and the horizontal portion 238_2, a portion of the floating gate layer 254 at the boundary between the first memory cell region 110 and the second memory cell region 112 can be exposed.

[0059] Referring to FIG. 6D , in step 612, the floating gate layer 254 is etched using the control gate 240 and the bonding dielectric layer 238 as an etching mask, thereby forming a planar floating gate 224. The planar floating gate 224 is a planar structure including a side tip 226a spaced laterally and vertically from the control gate 240. By using the control gate 240 and the bonding dielectric layer 238 as an etching mask, no additional photolithography process needs to be performed to define the shape of the planar floating gate 224. Furthermore, during the formation of the planar floating gate 224, a portion of the control gate 240 can be simultaneously etched, allowing the height of the control gate 240 to be slightly reduced. Even if the size of the control gate 240 is reduced during the etching process, the dimension of the bonding dielectric layer 238 is not significantly reduced because the composition of the bonding dielectric layer 238 is different from that of the planar floating gate 224. After formation of the planar floating gate 224 , the floating gate dielectric layer 218 may be etched to expose the substrate 200 at the boundary between the first memory cell region 110 and the second memory cell region 112 .

[0060] 6E, in step 614, the select gate layer 264 can be patterned to form the select gate 204. At least one drain region 244, such as two drain regions 244, can be formed on the sides of the select gate 204. The drain regions 244 are disposed in the first memory cell region 110 and the second memory cell region 112, respectively, and are electrically connected through vias or contacts in a subsequent manufacturing process. Additionally, a source region 222 can be simultaneously formed in the substrate 200 between the control gates 220.

[0061] The method for forming the drain region 244 and the source region includes, for example, an ion implantation process. The implanted dopant can be an n-type or p-type dopant, as determined by the device design. The dopant and doping concentration of the source region 222 and the drain region 244 can be the same or different.

[0062] An erase gate dielectric layer 234 is then conformally formed over the select gate 204, the planar floating gate 224, and the control gate 240. A portion of the erase gate dielectric layer 234 may fill the gap between the control gate 240 and the planar floating gate 224.

[0063] An erase gate layer 266 is then deposited over the control gate 240, filling in the gap at the boundary between the first memory cell 110 and the second memory cell 112. The erase gate layer 266 covers the non-vertical surfaces 246 of the control gate 240 as well as the side tips 226a of the planar floating gate 224.

[0064] The erase gate layer 266 can then be planarized to form the erase gate, as shown in Figure 2. Other structural elements can also be fabricated by performing appropriate fabrication steps to obtain a non-volatile memory device similar to the structure shown in Figures 1-4.

[0065] 7A-7C are schematic cross-sectional views of various stages of fabrication of a method for fabricating the nonvolatile memory device of FIGS. 1 and 5, according to some embodiments of the present disclosure. In FIGS. 7A-7C, the structure corresponds to line AA' in FIG. 1. Also, because the fabrication process of the embodiment shown in FIGS. 7A-7C is similar to the fabrication process of the embodiment shown in FIGS. 6A-6E, only the main differences between the embodiments will be described for brevity.

[0066] 7A , in step 702, a floating gate dielectric layer 218, a floating gate layer 254, a bonding dielectric layer 258, and an etching mask 256 are sequentially stacked and disposed on a substrate 200. The floating gate dielectric layer 218, the floating gate layer 254, and the bonding dielectric layer 258 can be formed by using a deposition and etching process. During the etching process, the pattern of the etching mask 256 can be transferred to the floating gate dielectric layer 218, the floating gate layer 254, and the bonding dielectric layer 258. The floating gate dielectric layer 218, the floating gate layer 254, and the bonding dielectric layer 258 can extend along the Y direction (also referred to as the second direction) in a top view. Dielectric spacers 212 are formed on sidewalls of the floating gate layer 254, the floating gate dielectric layer 218, and the etching mask 256. A select gate dielectric layer 202 is disposed on the substrate 200 on two sides of the floating gate dielectric layer 218.

[0067] Next, in step 704, a select gate layer 264 is formed on the substrate 200 on either side of the floating gate dielectric layer 218. The select gate layer 264 is laterally spaced from the floating gate layer 254 and the bonding dielectric layer 258. After the select gate layer 264 is formed, the etch mask 256 may be removed to expose the top surface of the bonding dielectric layer 258.

[0068] Next, after step 704, a photolithography and etching process is performed to etch the floating gate layer 254, the floating gate dielectric layer 218, and the bonding dielectric layer 258. Thus, the floating gate layer 254, the floating gate dielectric layer 218, and the bonding dielectric layer 258 can be patterned by the etching process, and a plurality of stripe-shaped structures (not shown) separated from each other in a top view can be formed. The stripe-shaped structures can extend along the X direction and extend at least within the first memory cell region 110 and the second memory cell region 112.

[0069] 7B, in step 706, a control gate layer 240 is disposed on the coupling dielectric layer 258. The thickness of the control gate layer 240 can be appropriately controlled so that the control gate layer 240 conforms to the shape of the underlying structure. Because the floating gate layer 254 has a stripe shape in a top view, the control gate layer 240 covers not only the top surface of the floating gate layer 254 but also the sidewalls (not shown) of the floating gate layer 254.

[0070] Next, in step 708, the control gate layer 240 is etched using an anisotropic etching process, thereby forming the control gate 240 on the sidewalls of the select gate layer 264 and on the top surface of the coupling gate layer 284. The control gate 240 is a self-aligned structure having non-vertical surfaces 246, and therefore does not require the use of photolithography processes. After the formation of the control gate 240, the control gates 240 in each of the first memory cell region 110 and the second memory cell region 112 can be laterally separated from each other in the X-direction.

[0071] 7C , in step 710, an anisotropic etching process is performed on the bonding dielectric layer 248 by using the control gate layer 240 as an etch mask, thereby forming a bonding dielectric layer 238 having a planar structure. The bonding dielectric layer 238 includes an end 242 that extends from under the control gate 240 and is exposed from the control gate 240. The end 242 of the bonding dielectric layer 238 includes a curved sidewall 239_2 that extends and is exposed from the control gate 240. After forming the bonding dielectric layer 238 including the vertical portion 238_1 and the horizontal portion 238_2, a portion of the floating gate layer 254 at the boundary between the first memory cell region 110 and the second memory cell region 112 can be exposed.

[0072] Thereafter, the same manufacturing steps as those shown in FIGS. 6D to 6E are carried out, and a nonvolatile memory device with the same structure as that shown in FIGS. 1 and 5 can be obtained.

[0073] Those skilled in the art will readily appreciate that numerous modifications and variations of the apparatus and method may be made while retaining the teachings of the present invention. Accordingly, the above disclosure should be construed as limited only by the metes and bounds of the appended claims. [Brief explanation of the drawings]

[0074] [Figure 1] 1 is a schematic top view of a non-volatile memory device according to an embodiment of the present disclosure. [Figure 2] 1 is a schematic top view of a non-volatile memory device according to an embodiment of the present disclosure. [Figure 3] 3 is a schematic cross-sectional view of a region of the non-volatile memory device of FIG. 2, according to one embodiment of the present disclosure. [Figure 4] 2 is a schematic cross-sectional view of a nonvolatile memory device taken along lines BB' and CC' of FIG. 1, according to one embodiment of the present disclosure. [Figure 5] 2 is a schematic cross-sectional view of a nonvolatile memory device according to another embodiment of the present invention, corresponding to line AA' of FIG. 1; [Figure 6A] 5A-5C are schematic diagrams of a method for fabricating the non-volatile memory device of FIGS. 1-4 at various stages of manufacture, according to one embodiment of the present disclosure. [Figure 6B] 5A-5C are schematic diagrams of a method for fabricating the non-volatile memory device of FIGS. 1-4 at various stages of manufacture, according to one embodiment of the present disclosure. [Figure 6C] 5A-5C are schematic diagrams of a method for fabricating the non-volatile memory device of FIGS. 1-4 at various stages of manufacture, according to one embodiment of the present disclosure. [Figure 6D] 5A-5C are schematic diagrams of a method for fabricating the non-volatile memory device of FIGS. 1-4 at various stages of manufacture, according to one embodiment of the present disclosure. [Figure 6E] 5A-5C are schematic diagrams of a method for fabricating the non-volatile memory device of FIGS. 1-4 at various stages of manufacture, according to one embodiment of the present disclosure. [Figure 7A]6A-6C are schematic cross-sectional views of a method for fabricating the non-volatile memory device of FIGS. 1 and 5 at various stages of manufacture, according to one embodiment of the present disclosure. [Figure 7B] 6A-6C are schematic cross-sectional views of a method for fabricating the non-volatile memory device of FIGS. 1 and 5 at various stages of manufacture, according to one embodiment of the present disclosure. [Figure 7C] 6A-6C are schematic cross-sectional views of a method for fabricating the non-volatile memory device of FIGS. 1 and 5 at various stages of manufacture, according to one embodiment of the present disclosure.

Claims

1. at least one memory cell; The at least one memory cell A substrate; a select gate disposed on the substrate; a control gate disposed on the substrate, laterally spaced from the select gate, the control gate including a non-vertical surface; a planar floating gate disposed between the substrate and the control gate, the planar floating gate including a lateral tip spaced laterally from the control gate; a coupling dielectric layer disposed between the control gate and the planar floating gate, the coupling dielectric layer having a first thickness; an erase gate dielectric layer covering the non-vertical surfaces of the control gate and the lateral tips of the planar floating gate and having a second thickness; an erase gate covering the erase gate dielectric layer and the lateral tip of the planar floating gate; where T1 represents the first thickness of the coupling dielectric layer and T2 represents the second thickness of the erase gate dielectric layer; The first thickness and the second thickness are: (T2)<(T1)<2(T2), A non-volatile memory device that satisfies the relationship.

2. The non-volatile memory device of claim 1 , wherein the non-vertical surface of the control gate comprises an inclined or curved surface.

3. The planar floating gate is two first side walls facing each other and arranged along a first direction, one of the first side walls being connected to the side tip; two second side walls arranged along a second direction different from the first direction; The non-volatile memory device of claim 1 , wherein the control gate extends along the second direction and covers the two second sidewalls of the planar floating gate.

4. The nonvolatile memory device of claim 3 , wherein the coupling dielectric layer extends along the second direction and covers the two second sidewalls of the planar floating gate.

5. The coupling dielectric layer is a vertical portion disposed between the control gate and the select gate; a horizontal portion disposed between the control gate and the planar floating gate; The non-volatile memory device of claim 1 , wherein the horizontal portion of the coupling dielectric layer includes curved sidewalls.

6. The non-volatile memory device of claim 5 , wherein the vertical portion of the coupling dielectric layer includes a curved upper surface.

7. The non-volatile memory device of claim 1 , wherein the coupling dielectric layer includes curved sidewalls covered by the control gate.

8. 8. The non-volatile memory device of claim 7, wherein a portion of the erase gate dielectric layer is disposed between the control gate and the planar floating gate.

9. The non-volatile memory device of claim 7 , wherein the erase gate includes a protrusion that extends toward the curved sidewall of the coupling dielectric layer.

10. The non-volatile memory device of claim 1 , wherein the erase gate includes a planar upper surface that covers the non-vertical surface of the control gate.

11. 2. The non-volatile memory device of claim 1, wherein the erase gate is laterally spaced from the select gate.

12. the at least one memory cell comprises a first memory cell and a second memory cell; each of the first memory cell and the second memory cell includes the select gate, the planar floating gate, and the control gate; the nonvolatile memory device further comprising a source region shared by the first memory cell and the second memory cell; The nonvolatile memory device of claim 1 , wherein the source region is covered by the erase gate.

13. 13. The non-volatile memory device of claim 12, wherein the first memory cell and the second memory cell are mirror images of each other.

14. 13. The nonvolatile memory device of claim 12, wherein the erase gate fills a gap between the control gates of the first memory cell and the second memory cell.

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