Polishing apparatus and polishing method

Abstract

To provide a polishing device which can monitor distribution itself of a liquid amount of a polishing liquid, chemical agent or the like on a polishing surface of a polishing pad, and polish a polished object such as a wafer under an appropriate polishing condition.SOLUTION: A polishing device includes a polishing table 5 which supports a polishing pad 2, a polishing head 7 which presses a polished object W to a polishing surface 2a of the polishing pad 2, a liquid supply device 8 which supplies a liquid onto the polishing surface 2a, a liquid monitoring device 12 which acquires optical information included in light from a plurality of points on the polishing surface 2a, an optical information analyzing part 13 which determines distribution of a liquid amount on the polishing surface 2a from the optical information, and an operation control part 47 which controls operation of the polishing device.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a polishing apparatus and a polishing method for polishing an object to be polished, such as a wafer, a substrate, or a panel, by pressing the object against the polishing surface of a polishing pad, and more particularly to a polishing apparatus and a polishing method for bringing the object to be polished into sliding contact with a polishing pad in a state where a polishing liquid such as a slurry is present on the polishing surface of the polishing pad. [Background technology]

[0002] In the manufacture of semiconductor devices, various types of films are formed on wafers. In the wiring and contact formation process, after the film deposition process, the wafer is polished to remove unnecessary film portions and surface irregularities. Chemical mechanical polishing (CMP) is a typical wafer polishing technique. CMP is performed by supplying a polishing liquid onto the polishing surface of a polishing pad while pressing and sliding the wafer against the polishing surface. The film formed on the wafer is polished by a combination of chemical action due to the chemical components of the polishing liquid supplied onto the polishing surface and mechanical action due to the abrasive grains contained in the polishing liquid and / or the polishing pad.

[0003] A polishing apparatus for performing the CMP process is equipped with a polishing table that supports a polishing pad and a polishing head that presses the wafer, which is the object to be polished, against the polishing pad. This polishing apparatus presses the wafer against the polishing surface of the polishing pad while supplying a polishing liquid from a liquid supply device onto the polishing surface of the polishing pad. At this time, by rotating the polishing table and polishing head, the wafer slides against the polishing surface, polishing the surface of the wafer to a flat, mirror-like finish.

[0004] The precision required for each process in the manufacturing of modern semiconductor devices has already reached the order of several nanometers, and CMP is no exception. Furthermore, with the increasing integration density of semiconductor integrated circuits, miniaturization and multi-layering are accelerating. Therefore, to achieve this miniaturization and multi-layering, CMP is also required to keep the variation in residual film thickness after CMP within the order of several nanometers across the entire wafer surface.

[0005] To reduce the variation in the remaining film thickness, it is necessary to control various factors that affect the polishing rate, such as the surface temperature of the polishing pad during polishing, the amount of polishing liquid supplied, and the distribution of the polishing liquid on the polishing pad. In the CMP process, after polishing, a cleaning liquid such as a chemical solution or deionized water (DIW) may be supplied onto the polishing pad through a liquid supply device instead of the polishing liquid to clean the wafer surface. The distribution of the supply amount of the cleaning liquid also affects the uniformity of the cleaning performance on the wafer surface.

[0006] Furthermore, there is a demand for cost reduction in each step in the manufacturing of semiconductor devices. In the CMP process, the polishing liquid is a particular target for cost reduction. The polishing liquid used in CMP is expensive, and disposal of used polishing liquid is also costly. Therefore, in order to reduce the operating costs of CMP equipment and the manufacturing costs of semiconductor devices, it is necessary to reduce the amount of polishing liquid used.

[0007] A liquid supply device typically supplies polishing liquid from a nozzle with a single supply port, and depending on the polishing process, the nozzle may be swung parallel to the polishing pad. Patent Document 1 describes a device that efficiently supplies polishing liquid to the polishing surface of a polishing pad. Patent Document 1 discloses a nozzle with multiple polishing liquid supply ports and a nozzle with a slit-shaped supply port, and claims that spreading the polishing liquid over the polishing pad enables efficient polishing. [Prior art documents] [Patent documents]

[0008] [Patent Document 1] Japanese Patent Application Laid-Open No. 2006-147773 Summary of the Invention [Problem to be solved by the invention]

[0009] As described above, the amount of polishing liquid supplied during polishing and the distribution of the amount of polishing liquid on the polishing pad have a significant effect on the polishing performance (variation in the polishing rate) and polishing efficiency. Therefore, monitoring the distribution of the amount of polishing liquid on the polishing pad is necessary to maintain the polishing performance and polishing efficiency.

[0010] Factors that cause changes in the distribution of the polishing liquid amount on the polishing pad include equipment failure, changes in the physical properties (viscosity, etc.) of the polishing liquid due to a rise in the temperature of the polishing pad, or changes in the surface condition of the polishing pad. In cases where the cause is equipment failure, this is often detected as an abnormality in the flow rate of the polishing liquid using a flow sensor or the like. For example, if the liquid supply device is a nozzle with a single supply port, a flow sensor is provided for each nozzle. Also, if the liquid supply device is a nozzle with multiple supply ports, a flow sensor is provided in the main flow path that communicates with the nozzles.

[0011] However, in a liquid supply device with multiple supply ports, if one of the supply ports becomes clogged, the change in flow rate is distributed among the supply ports, resulting in a small change in flow rate in the main flow path. As a result, the flow rate may not be determined to be abnormal, and as a result, the clog in the supply port may not be detected. One solution to this problem is to install multiple flow sensors at each of the supply ports. However, this requires an increase in the number of flow sensors as the number of supply ports increases, which inevitably increases the sensor installation space and sensor costs.

[0012] Furthermore, polishing pads wear out during polishing, and variations in the amount of wear across the polishing pad surface cause changes in the distribution of the polishing liquid on the polishing pad surface. For example, if the dimensions (particularly the groove depth) of the grooves formed in the polishing pad surface decrease due to wear, even if the polishing liquid supply flow rate is normal, the distribution of the polishing liquid on the polishing pad surface will change, leading to changes and variations in the polishing rate distribution. These problems are also true when the liquid supplied to the polishing surface is a chemical solution or pure water.

[0013] Therefore, the present invention provides a polishing apparatus and a polishing method that monitor the distribution of liquid amounts such as polishing liquid, chemical liquid, etc. on the polishing surface of a polishing pad, and can polish a workpiece such as a wafer under appropriate polishing conditions based on the distribution of liquid amounts obtained by this monitoring. [Means for solving the problem]

[0014] In one aspect, a polishing apparatus for polishing an object to be polished is provided, comprising: a polishing table that supports a polishing pad; a polishing head that presses the object to be polished against the polishing surface of the polishing pad; a liquid supply device that supplies liquid onto the polishing surface; a polishing table rotation device that rotates the polishing table; a polishing head rotation device that rotates the polishing head; a liquid monitoring device that acquires optical information contained in light from multiple points on the polishing surface; an optical information analysis unit that determines the distribution of the amount of liquid on the polishing surface from the optical information; and an operation control unit that controls the operation of the polishing apparatus.

[0015] In one aspect, the operation control unit is configured to issue a command to the liquid monitoring device before supplying the liquid to acquire first optical information of multiple points on the polishing surface, and to further issue a command to the liquid monitoring device when supplying the liquid to acquire second optical information of multiple points on the polishing surface, and the optical information analysis unit is configured to determine a first distribution from the first optical information, a second distribution from the second optical information, and subtract the first distribution from the second distribution to determine the distribution of the liquid amount. In one aspect, the operation control unit is configured to issue a command to the liquid monitoring device to acquire the optical information of multiple points on the polishing surface at multiple points during polishing of the workpiece, and the optical information analysis unit is configured to acquire the temporal progression of the distribution of the liquid amount on the polishing surface from the optical information of the multiple points on the polishing surface acquired at the multiple points.

[0016] In one aspect, the operation control unit is configured to issue a command to the liquid monitoring device to acquire the optical information during an interval before or after polishing the object to be polished. In one aspect, the operation control unit is configured to issue a command to the liquid monitoring device to acquire initial optical information from multiple points on the polishing surface of the polishing pad when it is unused and current optical information from multiple points on the polishing surface of the polishing pad when it is in use for polishing, the optical information analysis unit determines an initial distribution of the liquid amount from the initial optical information and determines a current distribution of the liquid amount on the polishing surface from the current optical information, and the operation control unit is configured to calculate the difference between the initial distribution and the current distribution. In one aspect, the operation control unit is configured to issue a command to the liquid supply device to supply a type of liquid different from the polishing liquid used to polish the workpiece onto the polishing surface of the polishing pad while the liquid monitoring device is acquiring the optical information.

[0017] In one embodiment, the polishing apparatus further includes a light source that irradiates the polishing surface with light having one or more wavelengths within a range of 200 nm to 1100 nm. In one embodiment, the liquid monitoring device has a light detection sensor that measures the amount of light having one or more wavelengths within the range of 200 nm to 1100 nm. In one aspect, the optical information analysis unit is configured to determine the distribution of the liquid amount on the polishing surface based on the measurement data of the light amount. In one aspect, the liquid monitoring device includes an image sensor that produces a color image. In one aspect, the optical information analysis unit is configured to determine the distribution of the liquid amount on the polishing surface by analyzing the color distribution as the optical information appearing on the color image. In one aspect, the liquid monitoring device is arranged to acquire optical information of the plurality of points within a monitoring area located upstream of the polishing head in the rotation direction of the polishing table.

[0018] In one aspect, the operation control unit is configured to calculate the differences in the distribution of the liquid amount on the polishing surface determined at the multiple points in time during polishing of the workpiece, and if the distribution difference is greater than an allowable value, to change the polishing conditions for the workpiece in a direction that reduces the distribution difference. In one aspect, the operation control unit is configured to, after changing the polishing conditions, recalculate the difference between the multiple distributions of the liquid amounts determined during polishing of the workpiece, and if the distribution difference is greater than an allowable value, stop the operation of the polishing apparatus before polishing the next workpiece. In one aspect, the operation control unit is configured to calculate the difference between the multiple distributions of the liquid amount determined at the multiple points during polishing of the workpiece, and if the distribution difference is greater than an allowable value, to stop the operation of the polishing apparatus before polishing the next workpiece. In one aspect, the operation control unit is configured to calculate the difference between the multiple distributions of the liquid amount determined at the multiple points during polishing of the workpiece, and if the distribution difference is greater than an allowable value, to change the pressing force of the polishing head against the workpiece.

[0019] In one aspect, the operation control unit is configured to change the polishing conditions for the workpiece to reduce the distribution difference when the difference between the initial distribution of the liquid amount on the polishing surface and the current distribution is greater than a threshold value. In one embodiment, after the polishing conditions are changed, the difference between the initial distribution of the liquid amount and the newly determined current distribution of the liquid amount is calculated again, and if the distribution difference is greater than the threshold value, the polishing operation of the polishing device is stopped before polishing the next workpiece. In one aspect, the operation control unit is configured to stop the polishing operation of the polishing device before polishing the next workpiece if the difference between the initial distribution of the liquid amount on the polishing surface and the current distribution is greater than a threshold value. In one aspect, the operation control unit is configured to determine that an abnormality has occurred in the polishing apparatus if the distribution of the liquid amount on the polishing surface falls below a predetermined threshold distribution of the liquid amount. In one embodiment, the liquid is one of a polishing liquid, pure water, a chemical liquid, and colored water.

[0020] In one aspect, a polishing method for polishing an object to be polished is provided, which includes a polishing table supporting a polishing pad, and a polishing head that is rotated while pressing the object to be polished against the polishing surface of the polishing pad to polish the object, and before, during, or after polishing the object to be polished, while supplying a liquid onto the polishing surface, optical information contained in light from multiple points on the polishing surface is acquired, and the distribution of the amount of liquid on the polishing surface is determined from the optical information.

[0021] In one embodiment, the distribution of the liquid amount is determined by subtracting a first distribution determined from first optical information of multiple points on the polishing surface acquired before the liquid is supplied from a second distribution determined from second optical information of multiple points on the polishing surface acquired during the liquid supply. In one aspect, the step of acquiring the optical information is a step of acquiring the optical information of multiple points on the polishing surface at multiple points during polishing of the workpiece while supplying liquid onto the polishing surface, and the step of determining the distribution of the liquid amount is a step of acquiring the time progression of the distribution of the liquid amount on the polishing surface from the optical information of the multiple points on the polishing surface acquired at the multiple points.

[0022] In one embodiment, the step of acquiring the optical information is a step of acquiring the optical information while supplying a liquid onto the polishing surface during an interval before or after polishing the object to be polished. In one aspect, the polishing method further includes steps of acquiring initial optical information at multiple points on the polishing surface while supplying liquid onto the polishing surface of the polishing pad in an unused state, acquiring current optical information at multiple points on the polishing surface while supplying liquid onto the polishing surface of the polishing pad in use for polishing, determining an initial distribution of the amount of liquid on the polishing surface from the initial optical information, determining a current distribution of the amount of liquid on the polishing surface from the current optical information, and calculating the difference between the initial distribution and the current distribution.

[0023] In one aspect, the liquid supplied onto the polishing surface of the polishing pad while the optical information is being acquired is a different type of liquid from the polishing liquid used to polish the workpiece. In one embodiment, the optical information is the amount of light from the polished surface. In one embodiment, the optical information is the color distribution of the polished surface. In one aspect, the step of acquiring the optical information is a step of acquiring the optical information of the plurality of points within a monitoring area located upstream of the polishing head in the rotation direction of the polishing table.

[0024] In one aspect, the polishing method further includes a step of calculating the difference between multiple distributions of the liquid amount determined at multiple points during polishing of the workpiece, and if the distribution difference is greater than an allowable value, changing the polishing conditions for the workpiece in a direction that reduces the distribution difference. In one aspect, the polishing method further includes a step of recalculating the differences in the multiple distributions of the liquid amounts determined at multiple points during polishing of the workpiece after changing the polishing conditions, and if the distribution differences are greater than an allowable value, stopping operation of the polishing apparatus before polishing the next workpiece. In one aspect, the polishing method further includes a step of calculating the difference between multiple distributions of the liquid amount determined at multiple points during polishing of the workpiece, and if the distribution difference is greater than an acceptable value, stopping operation of the polishing apparatus before polishing the next workpiece. In one aspect, the polishing method further includes a step of calculating the difference between multiple distributions of the liquid amount determined at multiple points during polishing of the workpiece, and changing the pressing force of the polishing head against the workpiece if the distribution difference is greater than an allowable value.

[0025] In one aspect, the polishing method further includes a step of changing the polishing conditions for the workpiece to be polished in a direction that reduces the distribution difference when the difference between the initial distribution of the liquid amount on the polishing surface and the current distribution is greater than a threshold value. In one aspect, the polishing method further includes a step of recalculating the difference between the initial distribution of the liquid amount on the polishing surface and the newly determined current distribution of the liquid amount after changing the polishing conditions, and if the distribution difference is greater than the threshold value, stopping operation of the polishing apparatus before polishing the next workpiece. In one aspect, the polishing method further includes a step of stopping operation of the polishing apparatus before polishing the next workpiece if the difference between the initial distribution of the liquid amount on the polishing surface and the current distribution is greater than a threshold value. In one embodiment, the polishing method further includes a step of determining that an abnormality has occurred in the polishing apparatus if the liquid amount distribution falls below a preset threshold liquid amount distribution. In one embodiment, the liquid is one of a polishing liquid, pure water, a chemical liquid, and colored water. [Effects of the Invention]

[0026] According to the present invention, it is possible to monitor the distribution of the liquid amount, such as the polishing liquid or chemical liquid, on the polishing pad itself. In addition, by feeding back the monitoring results to the operation of the polishing apparatus, it is possible to polish a workpiece, such as a wafer, under appropriate polishing conditions. [Brief explanation of the drawings]

[0027] [Figure 1] 1 is a perspective view schematically illustrating an embodiment of a polishing apparatus. [Figure 2] FIG. 2 is a cross-sectional view of the polishing head shown in FIG. [Figure 3] FIG. 2 is a plan view of a polishing pad, a liquid supply device, and a polishing head. [Figure 4] FIG. 10 is a diagram showing an example of a polishing liquid amount distribution graph. [Figure 5] FIG. 10 is a diagram showing an example of a polishing liquid amount distribution graph. [Figure 6] 6(a) and 6(b) are graphs showing the distribution of the amount of polishing liquid that changes during the polishing of one wafer. [Figure 7] 10 is a graph showing a state in which the overall distribution of the amount of polishing liquid decreases due to an abnormality in the polishing apparatus. [Figure 8] 10 is a graph illustrating a change in the distribution of the liquid amount when one of a plurality of supply ports is clogged. [Figure 9] 1 is a graph showing the initial and current distributions of liquid volume. [Figure 10] 10 is a graph illustrating an embodiment for determining whether the difference between the distributions of liquid amounts is within a predetermined range. [Figure 11] 10 is a graph illustrating a change in the distribution of the liquid amount when one of a plurality of supply ports is clogged. [Figure 12] Figure 12(a) is a graph showing a first distribution obtained from first optical information acquired before the liquid is supplied, Figure 12(b) is a graph showing a second distribution obtained from second optical information acquired during the supply of the liquid, and Figure 12(c) is a graph showing the distribution of liquid volume obtained by subtracting the first distribution from the second distribution. DETAILED DESCRIPTION OF THE INVENTION

[0028] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. Fig. 1 is a perspective view schematically illustrating one embodiment of a polishing apparatus. As shown in Fig. 1, the polishing apparatus includes a polishing table 5 that supports a polishing pad 2 having a polishing surface 2a, a polishing head 7 that presses a wafer W (an object to be polished) against the polishing surface 2a, a liquid supply device 8 that supplies a liquid such as a polishing liquid to the polishing surface 2a, a liquid monitoring device 12 that acquires optical information contained in light from the polishing surface 2a, an optical information analysis unit 13 that determines the distribution of the liquid amount on the polishing surface 2a from the optical information acquired by the liquid monitoring device 12, and an operation control unit 47 that controls the operation of the polishing apparatus.

[0029] The polishing head 7 is configured to hold a wafer W on its lower surface by vacuum suction or the like. In this embodiment, the wafer W is circular. The object to be polished is not limited to a wafer, as long as it is a workpiece used in the manufacture of semiconductor devices. Other examples of the object to be polished include square wafers, substrates, panels, etc.

[0030] The polishing apparatus further includes a support shaft 14, a polishing head swing arm 16 connected to the upper end of the support shaft 14 and swinging the polishing head 7, a polishing head shaft 18 rotatably supported at the free end of the polishing head swing arm 16, and a polishing head rotating device 20 that rotates the polishing head 7 about its axis. The polishing head rotating device 20 is fixed to the polishing head swing arm 16 and connected to the polishing head shaft 18 via a torque transmission mechanism (not shown) consisting of a belt, pulleys, etc. The polishing head 7 is connected to the lower end of the polishing head shaft 18. The polishing head rotating device 20 rotates the polishing head shaft 18 via the torque transmission mechanism, and the polishing head 7 rotates together with the polishing head shaft 18. In this way, the polishing head 7 is rotated by the polishing head rotating device 20 about its axis in the direction indicated by the arrow. A specific example of the polishing head rotating device 20 is an electric motor.

[0031] The polishing head shaft 18 can be moved up and down relative to the polishing head swing arm 16 by an elevation mechanism (not shown), and the up and down movement of this polishing head shaft 18 allows the polishing head 7 to move up and down relative to the polishing head swing arm 16.

[0032] The polishing apparatus further includes a polishing table rotating device 21 that rotates the polishing pad 2 and polishing table 5 about their respective axes. The polishing table 5 is connected to the polishing table rotating device 21 via a table shaft 5a. The polishing table 5 and polishing pad 2 are rotated by the polishing table rotating device 21 about the table shaft 5a in the direction indicated by the arrow. The polishing pad 2 is affixed to the upper surface of the polishing table 5. The upper surface of the polishing pad 2 forms a polishing surface 2a that polishes the wafer W. A specific example of the polishing table rotating device 21 is an electric motor.

[0033] Liquid supply device 8 includes liquid nozzle 9 having a supply port 9a at its tip, nozzle swinging mechanism 10 for swinging supply port 9a of liquid nozzle 9 in the radial direction of polishing pad 2, first liquid supply line 25 and second liquid supply line 27 connected to liquid nozzle 9, and first flow control valve 31 and second flow control valve 32 attached to first liquid supply line 25 and second liquid supply line 27, respectively. First liquid supply line 25 is a line for supplying a polishing liquid (typically a slurry) as the first liquid to liquid nozzle 9, and second liquid supply line 27 is a line for supplying a type of liquid different from the first liquid (e.g., pure water, a chemical liquid, or colored water) to liquid nozzle 9.

[0034] The first flow control valve 31 and the second flow control valve 32 are connected to the operation control unit 47, and the operations of the first flow control valve 31 and the second flow control valve 32 are controlled by the operation control unit 47. When the operation control unit 47 opens the first flow control valve 31 while the second flow control valve 32 is closed, a polishing liquid as a first liquid is supplied onto the polishing surface 2a of the polishing pad 2. When the operation control unit 47 opens the second flow control valve 32 while the first flow control valve 31 is closed, a second liquid different from the polishing liquid is supplied onto the polishing surface 2a of the polishing pad 2.

[0035] The wafer W is polished as follows. While the polishing head 7 and polishing table 5 are rotating, a polishing liquid is supplied onto the polishing surface 2a of the polishing pad 2 from a liquid nozzle 9 of a liquid supply device 8. An example of the polishing liquid supplied to the polishing pad 2 is a slurry containing abrasive grains. The polishing pad 2 rotates integrally with the polishing table 5 around its axis. The polishing head 7 is lowered to a predetermined polishing position by an elevator mechanism (not shown). At the polishing position, the polishing head 7 presses the wafer W against the polishing surface 2a of the polishing pad 2 with a predetermined pressure. With the polishing liquid present on the polishing surface 2a of the polishing pad 2, the wafer W is brought into sliding contact with the polishing surface 2a of the polishing pad 2. The surface of the wafer W is polished by a combination of the chemical action of the polishing liquid supplied onto the polishing surface 2a and the mechanical action of the abrasive grains contained in the polishing liquid and / or the polishing pad 2.

[0036] The optical information analysis unit 13 includes a storage device 13a storing a program and a calculation device 13b that executes calculations according to instructions included in the program. The storage device 13a includes a main storage device such as a random access memory (RAM) and an auxiliary storage device such as a hard disk drive (HDD) or a solid state drive (SSD). Examples of the calculation device 13b include a CPU (central processing unit) and a GPU (graphics processing unit). However, the specific configuration of the optical information analysis unit 13 is not limited to this embodiment.

[0037] The operation control unit 47 includes a storage device 47a storing a program and a calculation device 47b that executes calculations according to instructions included in the program. The storage device 47a includes a main storage device such as a random access memory (RAM) and an auxiliary storage device such as a hard disk drive (HDD) or a solid state drive (SSD). Examples of the calculation device 47b include a CPU (central processing unit) and a GPU (graphics processing unit). However, the specific configuration of the operation control unit 47 is not limited to this embodiment.

[0038] The optical information analysis unit 13 and the operation control unit 47 may each be configured by one computer or multiple computers. Alternatively, the optical information analysis unit 13 and the operation control unit 47 may be configured by one computer. The optical information analysis unit 13 and the operation control unit 47 do not need to be physically independent, and may be virtually constructed by at least one computer.

[0039] The liquid monitoring device 12 is disposed above the polishing pad 2 and faces the polishing surface 2a. More specifically, the liquid monitoring device 12 faces at least a monitoring area M upstream of the polishing head 7 in the rotational direction of the polishing table 5 and the polishing pad 2, and is configured to acquire optical information contained in light from the monitoring area M. The monitoring area M extends in the radial direction of the polishing pad 2. In one embodiment, multiple monitoring areas may be set. These monitoring areas extend in the radial direction of the polishing pad 2 and are arranged along the circumferential direction of the polishing pad 2. One of the multiple monitoring areas is located upstream of the polishing head 7, as indicated by the symbol M in FIG. 1 .

[0040] The polishing apparatus further includes a light source 40 that irradiates the polishing surface 2a of the polishing pad 2 with light having one or more wavelengths within a range of 200 nm to 1100 nm. The light source 40 is configured to emit at least visible light and includes, for example, a light-emitting diode. It is desirable that the light source 40 uniformly illuminates the polishing surface 2a of the polishing pad 2. For example, the light source 40 may include multiple light-emitting diodes or a light dispersion plate. The light source 40 is positioned to irradiate uniform light at least toward the monitoring region M.

[0041] FIG. 2 is a cross-sectional view of the polishing head 7 shown in FIG. 1. The polishing head 7 includes a carrier 71 fixed to the polishing head shaft 18 and a retainer ring 72 disposed below the carrier 71. A flexible membrane (elastic film) 74 that contacts the wafer W is held at the bottom of the carrier 71. Four pressure chambers G1, G2, G3, and G4 are formed between the membrane 74 and the carrier 71. The pressure chambers G1, G2, G3, and G4 are formed by the membrane 74 and the carrier 71. The central pressure chamber G1 is circular, and the other pressure chambers G2, G3, and G4 are annular. These pressure chambers G1, G2, G3, and G4 are arranged concentrically. In one embodiment, five or more pressure chambers may be provided, or three or fewer pressure chambers may be provided.

[0042] Compressed gas such as compressed air is supplied to the pressure chambers G1, G2, G3, and G4 from a gas supply source 77 via fluid paths F1, F2, F3, and F4, respectively. The wafer W is pressed against the polishing surface 2a of the polishing pad 2 by the membrane 74. More specifically, the pressure of the compressed gas in the pressure chambers G1, G2, G3, and G4 acts on the wafer W through the membrane 74, pressing the wafer W against the polishing surface 2a. The internal pressures of the pressure chambers G1, G2, G3, and G4 can be changed independently, thereby allowing the polishing pressure for the corresponding four regions of the wafer W, i.e., the center, inner middle, outer middle, and peripheral regions, to be independently adjusted.

[0043] An annular rolling diaphragm 76 is disposed between the carrier 71 and the retaining ring 72, and a pressure chamber G5 is formed inside this rolling diaphragm 76. The pressure chamber G5 is connected to the gas supply source 77 via a fluid path F5. The gas supply source 77 supplies compressed gas into the pressure chamber G5, and the compressed gas inside the pressure chamber G5 presses the retaining ring 72 against the polishing surface 2a of the polishing pad 2 via the rolling diaphragm 76.

[0044] The peripheral edge of the wafer W and the lower surface of the membrane 74 (i.e., the wafer pressing surface) are surrounded by a retainer ring 72. During polishing of the wafer W, the retainer ring 72 presses the polishing surface 2a of the polishing pad 2 outside the wafer W, preventing the wafer W from jumping out of the polishing head 7 during polishing.

[0045] Fluid paths F1, F2, F3, F4, and F5 extend from pressure chambers G1, G2, G3, G4, and G5 to gas supply source 77. Pressure regulators R1, R2, R3, R4, and R5 are attached to fluid paths F1, F2, F3, F4, and F5, respectively. Compressed gas is supplied from gas supply source 77 through pressure regulators R1 to R5 and fluid paths F1 to F5 into pressure chambers G1 to G5.

[0046] The pressure regulators R1, R2, R3, R4, and R5 are configured to control the pressures in the pressure chambers G1, G2, G3, G4, and G5. The pressure regulators R1, R2, R3, R4, and R5 are connected to an operation control unit 47. The operation control unit 47 is configured to generate target pressure values ​​for each of the pressure chambers G1 to G5. The operation control unit 47 sends the target pressure values ​​to the pressure regulators R1 to R5, and the pressure regulators R1 to R5 operate so that the pressures in the pressure chambers G1 to G5 match the corresponding target pressure values.

[0047] FIG. 3 is a plan view of the polishing pad 2, liquid supply device 8, and polishing head 7. As shown in FIG. 3, the polishing liquid is supplied from a liquid nozzle 9 of the liquid supply device 8 to a region near the center of the polishing surface 2a of the polishing pad 2. The polishing liquid on the rotating polishing pad 2 spreads radially outward due to centrifugal force and comes into contact with the wafer W held by the polishing head 7. Immediately after the supply of the polishing liquid begins, the polishing liquid has not yet spread sufficiently over the polishing surface 2a. Therefore, normally, the polishing head 7 presses the wafer W against the polishing surface 2a after a preset time has elapsed since the supply of the polishing liquid began.

[0048] The liquid monitoring device 12 is configured to acquire optical information contained in light from the polishing surface 2a of the polishing pad 2 and light from a liquid (e.g., a polishing liquid) present on the polishing surface 2a. Specific examples of the optical information include the color of the polishing surface 2a and the liquid (i.e., the color distribution on the polishing surface 2a), and the amount of light from the polishing surface 2a and the liquid. In this embodiment, the liquid monitoring device 12 is equipped with an image sensor that generates a color image. Examples of the image sensor include a CCD sensor and a CMOS sensor. The liquid monitoring device 12 is configured to generate a color image of the monitoring area M within the polishing surface 2a and acquire the color distribution appearing in the color image as optical information.

[0049] Typically, the polishing liquid and the polishing pad 2 have different colors. Therefore, the polishing liquid present on the polishing surface 2a of the polishing pad 2 can be visually identified from the polishing surface 2a. The optical information analysis unit 13 is connected to the liquid monitoring device 12 and acquires a color image from the liquid monitoring device 12. Furthermore, the optical information analysis unit 13 performs image processing on the color image to determine the distribution of the amount of polishing liquid present on the polishing surface 2a. More specifically, the optical information analysis unit 13 determines a liquid color index value representing the color intensity of the polishing liquid within the monitoring area M from the color image, and creates a polishing liquid amount distribution graph representing the amount of polishing liquid expressed by the liquid color index value at each position within the monitoring area M.

[0050] FIG. 4 is a diagram showing an example of a polishing liquid volume distribution graph. In FIG. 4, the vertical axis represents the amount of liquid corresponding to the liquid color index value, and the horizontal axis represents the position within the monitoring area M. In the example shown in FIG. 4, the position represented by the horizontal axis is the radial position of the polishing pad 2. Since the liquid color index value changes depending on the amount of polishing liquid present on the polishing surface 2a, the liquid color index value corresponds to the amount of polishing liquid. The vertical axis of FIG. 4 represents the amount of polishing liquid expressed using the liquid color index value.

[0051] Liquid color index values ​​can vary depending on the color model (or color space) that defines the colors in a color image. Examples of color models used to quantitatively represent colors include RGB, CMY, CMYK, HSL, and HSV.

[0052] The liquid color index value may be the numerical value of only one of the multiple components that define each color model. For example, the RGB color model uses three components, R (red), G (green), and B (blue), as primary colors, and the liquid color index value may be expressed by the numerical value of only one of these three components. In one example, each of the R (red), G (green), and B (blue) components is expressed by a numerical value in the range of 0 to 255. Using only one component may enable accurate detection of the polishing liquid on the polishing surface 2a.

[0053] In one embodiment, the optical information analyzer 13 may determine the liquid color index value using composite values ​​such as lightness and luminance in addition to each component of the color model (or color space). Lightness is the average of the maximum and minimum values ​​of each RGB component, and luminance is the brightness perceived by the human eye and is calculated as red component (R) × 0.21 + green component (G) × 0.72 + blue component (B) × 0.07. In this way, the optical information analyzer 13 can determine the relative distribution of the polishing liquid on the polishing pad 2 by analyzing a color image that reflects the shading of the polishing liquid on the polishing pad 2. Alternatively, the optical information analyzer 13 may be configured to acquire data indicating the relationship between the thickness and color of the polishing liquid film in advance and determine the film thickness distribution of the polishing liquid present on the polishing surface 2a from the color image.

[0054] When the color of the polishing liquid is close to the color of the polishing pad 2, or when the polishing liquid is transparent, it may be difficult to determine the distribution of the amount of polishing liquid on the polishing pad 2 by processing a color image. Therefore, in one embodiment, the liquid monitoring device 12 has a light detection sensor that measures the amount of light, which is another example of optical information, instead of an image sensor that generates a color image. In one example, the light detection sensor is configured to measure the amount of light having one or more wavelengths in the range of 200 nm to 1100 nm. An example of the light detection sensor is a photodiode.

[0055] The liquid monitoring device 12, which is equipped with a light detection sensor, measures the amount of light reflected from the polishing liquid in the monitoring area M and transmits the measurement data to the optical information analysis unit 13. The optical information analysis unit 13 is configured to determine the distribution of the amount of polishing liquid on the polishing surface 2a based on the measurement data of the amount of light. In areas where polishing liquid is present on the polishing surface 2a of the polishing pad 2, light is more likely to be reflected by the polishing liquid, resulting in a larger amount of light. Therefore, the optical information analysis unit 13 can determine the distribution of the amount of polishing liquid on the polishing surface 2a based on the measurement data of the amount of light obtained by the liquid monitoring device 12.

[0056] FIG. 5 is a diagram showing an example of a polishing liquid volume distribution graph. In FIG. 5, the vertical axis represents the amount of liquid corresponding to the amount of light reflected from the polishing liquid, and the horizontal axis represents the position within the monitoring region M. In the example shown in FIG. 5, the position represented by the horizontal axis is the radial position of the polishing pad 2. Since the amount of light reflected from the polishing liquid varies depending on whether or not there is polishing liquid on the polishing surface 2a, the amount of light corresponds to the amount of polishing liquid present on the polishing surface 2a. The vertical axis in FIG. 5 represents the amount of polishing liquid expressed using the amount of light.

[0057] In one embodiment, the optical detection sensor of the liquid monitoring device 12 may be an infrared sensor. The polishing surface 2a and polishing liquid emit infrared radiation that depends on their temperatures. During polishing of the wafer W, the temperature of the polishing surface 2a of the polishing pad 2 rises due to sliding contact with the wafer W. In contrast, the temperature of the polishing liquid is approximately room temperature. Therefore, a temperature difference exists between the polishing surface 2a and the polishing liquid. The intensity of the infrared radiation emitted from the polishing surface 2a and the polishing liquid varies depending on their temperatures. The liquid monitoring device 12 equipped with an infrared sensor measures the intensity of the infrared radiation within the monitoring region M and transmits the measurement data to the optical information analysis unit 13. The optical information analysis unit 13 determines the distribution of the amount of polishing liquid on the polishing surface 2a based on the measurement data of the infrared radiation intensity. The intensity of the infrared radiation corresponds to the amount of polishing liquid present on the polishing surface 2a. When an infrared sensor is used, the light source 40 shown in FIG. 1 may be omitted.

[0058] If the color of the polishing liquid is close to the color of the polishing pad 2 or if the polishing liquid is transparent, the colored water may be used to analyze the distribution of the colored water amount on the polishing surface 2a during intervals before or after polishing the wafer W, such as when the polishing apparatus is idling. More specifically, during intervals before or after polishing the wafer W, the operation control unit 47 closes the first flow control valve 31 and opens the second flow control valve 32 shown in FIG. 1 to supply colored water as the second liquid from the liquid supply device 8 onto the polishing surface 2a of the polishing pad 2. An example of colored water is black water containing carbon or the like. The operation control unit 47 issues a command to the liquid monitoring device 12 to acquire optical information contained in the light from the polishing surface 2a and the colored water. More specifically, the liquid monitoring device 12 generates a color image of the colored water on the polishing surface 2a and sends the color image to the optical information analysis unit 13. The optical information analysis unit 13 analyzes the color image to determine the distribution of the colored water amount on the polishing surface 2a. Depending on the colors of the colored water and the polishing surface 2a of the polishing pad 2, the distribution of the obtained optical information (e.g., brightness values) may be inverted from the distribution of the actual liquid amount. In such cases, the liquid amount distribution may be obtained by performing data processing such as inverting the brightness values.

[0059] Pure water may be used instead of colored water as the liquid supplied during the interval time. During the interval time before or after polishing the wafer W, the operation control unit 47 closes the first flow control valve 31 and opens the second flow control valve 32 shown in FIG. 1 to supply pure water as the second liquid from the liquid supply device 8 onto the polishing surface 2a of the polishing pad 2. In this case, in accordance with the other embodiment described above, the liquid monitoring device 12 measures the amount of light reflected from the pure water in the monitoring area M and transmits the measurement data to the optical information analysis unit 13. The optical information analysis unit 13 determines the distribution of the amount of pure water on the polishing surface 2a based on the measurement data of the light amount.

[0060] Furthermore, instead of colored water, a chemical liquid may be used as the liquid supplied during the interval time. In this case, the distribution of the amount of chemical liquid on the polishing surface 2a can be obtained in the same manner as in the above-described embodiment.

[0061] The polishing liquid used in polishing wafers is generally expensive. According to the above embodiment, in which colored water, pure water, or a chemical liquid is used instead of the polishing liquid, the cost required to determine the distribution of the liquid amount on the polishing surface 2 a can be reduced.

[0062] Depending on the polishing process, polishing products may color the polishing surface 2a of the polishing pad 2. For example, in copper polishing, copper ions in the polishing products may mix with the polishing liquid, coloring the polishing surface 2a of the polishing pad 2 and creating a color contrast with the liquid, such as the polishing liquid, supplied by the liquid supply device 8. The liquid monitoring device 12 generates a color image of the colored polishing surface 2a, and the optical information analysis unit 13 determines the color distribution of the polishing surface 2a from the color image. This color distribution can also be used as the distribution of the liquid amount on the polishing pad 2.

[0063] During polishing of the wafer W, it is desirable for the polishing liquid to be uniformly distributed on the polishing surface 2a. This is because the polishing rate of the film on the wafer W can vary depending on the amount of polishing liquid present on the polishing surface 2a. Therefore, the operation control unit 47 is configured to issue a command to the liquid monitoring device 12 to acquire optical information of the polishing surface 2a (for example, to generate multiple color images) at multiple time points during polishing of the wafer W. The optical information analysis unit 13 is configured to analyze the optical information acquired at the multiple time points to acquire the temporal transition of the distribution of the polishing liquid amount.

[0064] If the distribution of the polishing liquid amount on the polishing surface 2a changes during polishing of the wafer W, the operation control unit 47 may change the polishing conditions for the wafer W to restore the original distribution of the polishing liquid amount. More specifically, the operation control unit 47 calculates the difference between the multiple distributions of the polishing liquid amount determined at multiple points during polishing of the wafer W. If the distribution difference is greater than a tolerance, the operation control unit 47 determines that the polishing liquid amount distribution is abnormal and changes the polishing conditions to reduce the distribution difference. For example, the operation control unit 47 reduces the distribution difference by changing at least one of the rotation speed of the polishing head 7, the rotation speed of the polishing table 5, the flow rate of the polishing liquid supplied from the liquid supply device 8, and the oscillation of the liquid nozzle 9. This operation prevents unintended changes in the polishing rate and polishing rate distribution of the wafer W.

[0065] 6(a) and 6(b) are graphs showing the distribution of the polishing liquid amount that changes during polishing of one wafer W. As shown in FIG. 6(a), during polishing of the wafer W, the current distribution of the polishing liquid amount may decrease from the distribution of the polishing liquid amount at the start of polishing of the wafer W. The operation control unit 47 calculates the difference between these distributions of the polishing liquid, and if the distribution difference is greater than a tolerance, the operation control unit 47 changes the polishing conditions for the wafer W to reduce the difference, as shown in FIG. 6(b). For example, the operation control unit 47 increases the aperture of the first flow control valve 31 to increase the flow rate of the polishing liquid supplied to the polishing surface 2a. If the distribution of the polishing liquid amount is biased toward the inner or outer periphery of the polishing pad 2, the operation control unit 47 may issue a command to the polishing table rotation device 21 to increase or decrease the rotation speed of the polishing table 5.

[0066] In one embodiment, after a predetermined time has elapsed since the operation control unit 47 changed the polishing conditions of the polishing apparatus, the optical information analysis unit 13 re-determines the current distribution of polishing liquid volume during polishing of the wafer W, and the operation control unit 47 calculates the difference between the distribution of polishing liquid volume at the start of polishing of the wafer W and the re-determined current distribution of polishing liquid volume, and if this distribution difference is greater than the above-mentioned allowable value, the operation of the polishing apparatus may be stopped before polishing the next wafer.

[0067] Furthermore, in one embodiment, the operation control unit 47 calculates the difference between multiple distributions of the polishing liquid amounts determined at multiple points during polishing of the wafer W, and if the distribution difference is greater than an allowable value, may stop the operation of the polishing apparatus before polishing the next wafer without changing the polishing conditions of the wafer W.

[0068] Furthermore, in one embodiment, the operation control unit 47 may calculate the difference between multiple distributions of the polishing liquid amount determined at multiple points during polishing of the wafer W, and if the distribution difference is greater than a tolerance, change the pressing force of the polishing head 7 against the wafer W. As shown in FIG. 6(a), if the distribution of the polishing liquid amount decreases during polishing of the wafer W, a decrease in the polishing rate of the wafer W is expected due to the decrease in the amount of polishing liquid. Therefore, the operation control unit 47 increases the pressing force of the polishing head 7 against the wafer W to compensate for the decrease in the polishing rate. Specifically, the operation control unit 47 issues a command to at least one of the pressure regulators R1 to R4 shown in FIG. 2 to increase the pressure in at least one of the pressure chambers G1 to G4 of the polishing head 7. As a result, the polishing head 7 can press the wafer W against the polishing pad 2 with a higher pressing force, thereby maintaining the intended polishing rate.

[0069] During polishing, factors that cause a change in the distribution of the amount of polishing liquid on the polishing surface 2a of the polishing pad 2 include equipment failure, and changes in the physical properties (viscosity, etc.) of the polishing liquid or the surface condition of the polishing pad 2 due to a rise in temperature of the polishing pad 2. If the cause is equipment failure, it is possible to detect the equipment failure by monitoring the distribution of the amount of polishing liquid on the polishing pad 2.

[0070] In one embodiment, the operation control unit 47 may be configured to determine that an abnormality has occurred in the polishing apparatus when the distribution of the liquid (e.g., polishing liquid, pure water, chemical liquid, or colored water) falls below a preset threshold distribution. For example, as shown in FIG. 7, when the entire distribution of the liquid amount falls below a preset threshold distribution (or reference distribution), it is considered that the cause may be a blockage in the liquid nozzle 9 or the first liquid supply line 25 (see FIG. 1). The operation control unit 47 may generate an alarm signal when the distribution of the liquid amount falls below the preset threshold distribution.

[0071] While the liquid nozzle 9 shown in FIG. 1 has a single supply port 9a at its tip, in another embodiment, the liquid nozzle 9 may have multiple supply ports aligned along the radial direction of the polishing pad 2. In this case, the liquid nozzle 9 is more likely to form a uniform liquid film on the polishing surface 2a of the polishing pad 2. However, if one of the multiple supply ports becomes clogged, the liquid volume distribution decreases locally. On the other hand, the liquid flow rate caused by the clog of such a single supply port remains almost unchanged overall. Therefore, it is difficult to detect a clog of a single supply port based on a change in flow rate. According to the above embodiment that monitors the liquid volume distribution, as shown in FIG. 8, the operation control unit 47 determines that an abnormality has occurred when the liquid volume distribution falls below a threshold distribution, thereby enabling partial clogging of the liquid nozzle 9 to be detected.

[0072] Typically, multiple grooves are formed on the polishing surface 2a of the polishing pad 2 to control the flow of the polishing liquid. As more wafers are polished, the polishing pad 2 gradually wears down, and the depth of the grooves on the polishing surface 2a gradually becomes shallower. As a result, even if the flow rate of the polishing liquid supplied from the liquid supply device 8 does not change, the distribution of the amount of polishing liquid on the polishing surface 2a may change.

[0073] Therefore, in order to examine changes over time in the distribution of the polishing liquid amount, in the embodiment described below, the liquid amount distribution when the polishing pad 2 is unused is compared with the liquid amount distribution when the polishing pad 2 is in use. More specifically, the operation control unit 47 is configured to issue a command to the liquid monitoring device 12 to acquire initial optical information of the polishing surface 2a of the polishing pad 2 in an unused state and current optical information of the polishing surface 2a of the polishing pad 2 after it has been used for polishing. The polishing pad 2 in an unused state is a brand new polishing pad that has not been used to polish a wafer.

[0074] The liquid used can be a polishing liquid, pure water, a chemical solution, or colored water. However, because polishing liquids are generally expensive, the liquid used is preferably pure water, a chemical solution, or colored water. Specific examples of optical information of the polishing surface 2a include the color distribution on the polishing surface 2a and the amount of light from the polishing surface 2a and the liquid. As described above, the liquid monitoring device 12 includes an image sensor, a light detection sensor, an infrared sensor, and the like. For example, the liquid monitoring device 12 generates an initial color image of the liquid on the polishing surface 2a of the polishing pad 2 before polishing and generates a recent color image of the liquid on the polishing surface 2a of the polishing pad 2 during polishing. Alternatively, the liquid monitoring device 12 measures the initial amount of light from the liquid on the polishing surface 2a of the polishing pad 2 before polishing and measures the recent amount of light from the liquid on the polishing surface 2a of the polishing pad 2 during polishing.

[0075] The optical information analysis unit 13 determines the initial distribution of the liquid amount on the polishing surface 2a from initial optical information (e.g., an initial color image or measurement data of the initial light intensity), and determines the current distribution of the liquid amount on the polishing surface 2a from current optical information (e.g., the most recent color image or measurement data of the most recent light intensity). Figure 9 is a graph showing the initial distribution of the liquid amount on the polishing surface 2a and the current distribution of the liquid amount on the polishing surface 2a. As shown in Figure 9, the distribution of the liquid amount on the polishing surface 2a changes over time due to wear of the polishing pad 2.

[0076] The operation control unit 47 receives data on the initial and current distributions of the liquid amount on the polishing surface 2a from the optical information analysis unit 13 and stores it in the storage device 47a. The operation control unit 47 is configured to determine the state of the polishing pad 2 from the difference between the initial and current distributions of the liquid amount on the polishing surface 2a. More specifically, the operation control unit 47 is configured to calculate the difference between the initial and current distributions of the liquid amount on the polishing surface 2a, and if this distribution difference is greater than a threshold value, to generate an alarm signal notifying the wear of the polishing pad 2.

[0077] The operation control unit 47 may be configured to change the polishing conditions for the wafer in a direction that reduces the distribution difference when the difference between the initial distribution of the liquid amount on the polishing surface 2a and the current distribution is greater than a threshold value. More specifically, the operation control unit 47 reduces the distribution difference by changing at least one of the rotation speed of the polishing head 7, the rotation speed of the polishing table 5, the flow rate of the liquid supplied from the liquid supply device 8, and the oscillation of the liquid nozzle 9. Such an operation can prevent unintended changes in the wafer polishing rate and polishing rate distribution.

[0078] In one embodiment, after a predetermined time has elapsed since the operation control unit 47 changed the polishing conditions, the optical information analysis unit 13 re-determines the current distribution of liquid amount on the polishing surface 2a, and the operation control unit 47 calculates the difference between the initial distribution of liquid amount and the re-determined current distribution of liquid amount, and if this distribution difference is greater than the above threshold, the operation of the polishing apparatus may be stopped before polishing the next wafer.

[0079] Furthermore, in one embodiment, if the difference between the initial distribution of liquid volume on the polishing surface 2a and the current distribution is greater than a threshold value, the operation control unit 47 may stop the operation of the polishing apparatus before polishing the next wafer without changing the polishing conditions of the wafer.

[0080] Furthermore, in one embodiment, the operation control unit 47 may change the pressing force of the polishing head 7 against the wafer if the difference between the initial distribution of the liquid amount on the polishing surface 2a and the current distribution is greater than a threshold value. As shown in FIG. 9, as the wear of the polishing pad 2 progresses, the amount of polishing liquid on the polishing surface 2a of the polishing pad 2 decreases, and a decrease in the polishing rate of the wafer is expected due to the decrease in the amount of polishing liquid. Therefore, the operation control unit 47 increases the pressing force of the polishing head 7 against the wafer to compensate for the decrease in the polishing rate. Specifically, the operation control unit 47 issues a command to at least one of the pressure regulators R1 to R4 shown in FIG. 2 to increase the pressure in at least one of the pressure chambers G1 to G4 of the polishing head 7. As a result, the polishing head 7 can press the wafer against the polishing pad 2 with a higher pressing force, thereby maintaining the intended polishing rate.

[0081] The tolerance and threshold values ​​to be compared with the difference between the liquid amount distributions on the polishing surface 2a may be determined from the difference between the normal liquid amount distribution and the distribution when the normal liquid amount distribution has changed by a predetermined percentage, for example, 10%. The normal liquid amount distribution may be, for example, the liquid amount distribution when the polishing rate profile of the wafer is normal.

[0082] The normal liquid amount distribution may vary due to manufacturing variations in the polishing pad 2. In such cases, data on multiple past normal liquid amount distributions may be stored in the storage device 47a of the operation control unit 47, and the operation control unit 47 may determine whether the above-mentioned difference is within a predetermined range from the data, as shown in FIG.

[0083] The tolerance and threshold values ​​to be compared with the difference in the liquid amount distribution on the polishing surface 2a may be automatically determined by artificial intelligence (AI). For example, they may be combined with information on consumables such as polishing pads and liquids, and information on the occurrence of polishing abnormalities, and stored in the storage device 47a of the operation control unit 47. Then, by using artificial intelligence (AI) or the like to learn the transition in the liquid amount distribution for each combination of polishing pad and liquid, and inputting the consumables information into the operation control unit 47, the tolerance and threshold values ​​can be automatically set.

[0084] Furthermore, as shown in Figure 11, for example, if an abnormality in the liquid volume distribution is localized and small, such an abnormality may not be detected correctly. In such cases, determining normality / abnormality from the shape of the liquid volume distribution, rather than from a tolerance or threshold, enables accurate determination. Specifically, by having the operation control unit 47 recognize the liquid volume distribution at the time of abnormality as abnormal data using machine learning, when a similar liquid volume distribution is detected, it is determined to be abnormal.

[0085] In the embodiment described so far, the optical information analyzer 13 determines the distribution of the liquid amount on the polishing surface 2a of the polishing pad 2 from optical information (e.g., color on a color image, measurement data of light intensity, etc.) acquired from the liquid monitoring device 12. However, although not shown, there are light-blocking objects above the polishing pad 2, such as a dresser for dressing (restoring) the polishing surface 2a of the polishing pad 2 and an atomizer for cleaning the polishing surface 2a. Furthermore, depending on the position of the light source 40, there may be variations in the amount of light reflected by the liquid on the polishing pad 2. In addition, the polishing pad 2 itself has its own color and its variations. The presence of such light-blocking objects and the effects of the color and variations of the light source 40 and the polishing pad 2 prevent the optical information analyzer 13 from accurately determining the distribution of the liquid on the polishing surface 2a.

[0086] Therefore, in the embodiment described below, the operation control unit 47 is configured to issue a command to the liquid monitoring device 12 before supplying the liquid to cause it to acquire first optical information contained in light from the polishing surface 2 a of the polishing pad 2, and to issue a command to the liquid monitoring device 12 during supply of the liquid to cause it to acquire second optical information contained in the light from the polishing surface 2 a. Furthermore, the optical information analysis unit 13 is configured to determine a first distribution from the first optical information, a second distribution from the second optical information, and subtract the first distribution from the second distribution to determine the distribution of the liquid amount.

[0087] FIG. 12(a) is a graph showing a first distribution obtained from first optical information of the polishing surface 2a acquired by the liquid monitoring device 12 before the liquid was supplied. FIG. 12(b) is a graph showing a second distribution obtained from second optical information of the polishing surface 2a acquired by the liquid monitoring device 12 during the liquid supply. FIG. 12(c) is a graph showing the liquid amount distribution obtained by subtracting the first distribution from the second distribution. As shown in FIGS. 12(a) and 12(b), the first and second distributions contain noise due to light-blocking objects such as a dresser. Therefore, by subtracting the first distribution from the second distribution, a noise-free liquid amount distribution is obtained, as shown in FIG. 12(c).

[0088] The above-described embodiments have been described for the purpose of enabling a person of ordinary skill in the art to practice the present invention. Various modifications of the above-described embodiments would be obvious to a person skilled in the art, and the technical concept of the present invention may be applied to other embodiments. Therefore, the present invention is not limited to the described embodiments, but is to be interpreted in the broadest scope in accordance with the technical concept defined by the claims. [Explanation of symbols]

[0089] 2 polishing pads 2a Polished surface 5 Polishing table 5a Table axis 7 Polishing Head 8 Liquid supply device 9 Liquid Nozzle 9a Supply port 10 Nozzle swing mechanism 12 Liquid monitoring device 13 Optical information analysis department 14 Spindle 16 Polishing head swing arm 18 Polished head shaft 20 Polishing head rotation device 21 Polishing table rotation device 25 First liquid supply line 27 Second liquid supply line 31 First flow control valve 32 Second flow control valve 40 light source 47 Motion control section 71 Career 72 Retainer ring 74 Membrane (elastic membrane) 76 Rolling diaphragm W Wafer (object to be polished) M Monitoring Area F1,F2,F3,F4,F5 Fluid path G1, G2, G3, G4, G5 pressure chambers R1,R2,R3,R4,R5 Pressure regulator

Claims

1. A polishing apparatus for polishing an object to be polished, a polishing table supporting a polishing pad; a polishing head that presses the object to be polished against the polishing surface of the polishing pad; a liquid supply device for supplying a liquid onto the polishing surface; a polishing table rotating device that rotates the polishing table; a polishing head rotating device that rotates the polishing head; a liquid monitoring device that acquires optical information contained in light from a plurality of points on the polished surface; an optical information analysis unit that determines the distribution of the liquid amount on the polishing surface from the optical information; an operation control unit for controlling the operation of the polishing apparatus; the operation control unit is configured to issue a command to the liquid monitoring device before supplying the liquid to cause it to acquire first optical information of a plurality of points on the polishing surface, and to issue a command to the liquid monitoring device when supplying the liquid to cause it to acquire second optical information of a plurality of points on the polishing surface; The optical information analysis unit is configured to determine a first distribution from the first optical information, a second distribution from the second optical information, and subtract the first distribution from the second distribution to determine the liquid amount distribution.

2. the operation control unit is configured to issue a command to the liquid monitoring device to acquire the optical information of a plurality of points on the polishing surface at a plurality of time points during polishing of the workpiece, 2. The polishing apparatus according to claim 1, wherein the optical information analysis unit is configured to obtain a temporal change in the distribution of the liquid amount on the polishing surface from the optical information of multiple points on the polishing surface obtained at the multiple time points.

3. 2. The polishing apparatus according to claim 1, wherein the operation control unit is configured to issue a command to the liquid monitoring device to acquire the optical information during an interval before or after polishing the object to be polished.

4. A polishing apparatus for polishing an object to be polished, comprising: a polishing table supporting a polishing pad; a polishing head that presses the object to be polished against the polishing surface of the polishing pad; a liquid supply device for supplying a liquid onto the polishing surface; a polishing table rotating device that rotates the polishing table; a polishing head rotating device that rotates the polishing head; a liquid monitoring device that acquires optical information contained in light from a plurality of points on the polished surface; an optical information analysis unit that determines the distribution of the liquid amount on the polishing surface from the optical information; an operation control unit for controlling the operation of the polishing apparatus; The operation control unit is configured to issue a command to the liquid monitoring device to acquire initial optical information from a plurality of points on the polishing surface of the polishing pad in an unused state and current optical information from a plurality of points on the polishing surface of the polishing pad in use for polishing, the optical information analysis unit determines an initial distribution of the liquid amount from the initial optical information, and determines a current distribution of the liquid amount on the polishing surface from the current optical information; The polishing apparatus, wherein the operation control unit is configured to calculate a difference between the initial distribution and the current distribution.

5. The polishing apparatus of claim 3, wherein the operation control unit is configured to issue a command to the liquid supply device to supply a type of liquid different from the polishing liquid used to polish the workpiece onto the polishing surface of the polishing pad while the liquid monitoring device is acquiring the optical information.

6. 6. The polishing apparatus according to claim 1, further comprising a light source for irradiating the polishing surface with light having one or more wavelengths in the range of 200 nm to 1100 nm.

7. 7. The polishing apparatus according to claim 1, wherein the liquid monitoring device has a light detection sensor that measures the amount of light having one or more wavelengths in the range of 200 nm to 1100 nm.

8. 8. The polishing apparatus according to claim 7, wherein the optical information analysis unit is configured to determine the distribution of the liquid amount on the polishing surface based on the measurement data of the light amount.

9. 7. The polishing apparatus according to claim 1, wherein the liquid monitoring device includes an image sensor that generates a color image.

10. 10. The polishing apparatus according to claim 9, wherein the optical information analysis unit is configured to determine the distribution of the liquid amount on the polishing surface by analyzing a color distribution as the optical information appearing on the color image.

11. 11. The polishing apparatus according to claim 1, wherein the liquid monitoring device is arranged to acquire optical information of the plurality of points within a monitoring area located upstream of the polishing head in the rotation direction of the polishing table.

12. 3. The polishing apparatus of claim 2, wherein the operation control unit is configured to calculate the difference in the distribution of the liquid amount on the polishing surface determined at the multiple points during polishing of the workpiece, and if the distribution difference is greater than an allowable value, change the polishing conditions for the workpiece in a direction that reduces the distribution difference.

13. The polishing apparatus of claim 12, wherein the operation control unit is configured to recalculate the difference between the multiple distributions of the liquid amounts determined during polishing of the workpiece after changing the polishing conditions, and if the distribution difference is greater than an allowable value, stop operation of the polishing apparatus before polishing the next workpiece.

14. 3. The polishing apparatus of claim 2, wherein the operation control unit is configured to calculate the difference between the multiple distributions of the liquid amount determined at the multiple points during polishing of the workpiece, and if the distribution difference is greater than an allowable value, to stop operation of the polishing apparatus before polishing the next workpiece.

15. 3. The polishing apparatus of claim 2, wherein the operation control unit is configured to calculate the difference between the multiple distributions of the liquid amount determined at the multiple points during polishing of the workpiece, and if the distribution difference is greater than an allowable value, to change the pressing force of the polishing head against the workpiece.

16. 5. The polishing apparatus of claim 4, wherein the operation control unit is configured to change the polishing conditions for the workpiece to reduce the distribution difference when the difference between the initial distribution of the liquid amount on the polishing surface and the current distribution is greater than a threshold value.

17. 17. The polishing apparatus of claim 16, further comprising: a polishing condition change step for changing the polishing conditions; a difference between the initial distribution of the liquid amount and the newly determined current distribution of the liquid amount; and a polishing operation of the polishing apparatus is stopped before polishing the next workpiece if the distribution difference is greater than the threshold value.

18. 5. The polishing apparatus of claim 4, wherein the operation control unit is configured to stop the polishing operation of the polishing apparatus before polishing the next workpiece if the difference between the initial distribution of the liquid amount on the polishing surface and the current distribution is greater than a threshold value.

19. 19. A polishing apparatus according to claim 1, wherein the operation control unit is configured to determine that an abnormality has occurred in the polishing apparatus if the distribution of the liquid amount on the polishing surface falls below a predetermined threshold distribution of the liquid amount.

20. 2. The polishing apparatus according to claim 1, wherein the liquid is one of a polishing liquid, pure water, a chemical liquid, and colored water.

21. A polishing method for polishing an object to be polished, comprising: a polishing table that supports a polishing pad and a polishing head are rotated, and the polishing head presses the object to be polished against the polishing surface of the polishing pad to polish the object; Before, during, or after polishing the object to be polished, while supplying a liquid onto the polishing surface, optical information contained in light from a plurality of points on the polishing surface is acquired; determining a distribution of the liquid volume on the polishing surface from the optical information; A polishing method in which the distribution of the liquid amount is determined by subtracting a first distribution determined from first optical information of multiple points on the polishing surface acquired before the liquid is supplied from a second distribution determined from second optical information of multiple points on the polishing surface acquired when the liquid is supplied.

22. the step of acquiring the optical information is a step of acquiring the optical information of a plurality of points on the polishing surface at a plurality of time points during polishing of the workpiece while supplying a liquid onto the polishing surface, The polishing method according to claim 21, wherein the process of determining the distribution of the liquid amount is a process of obtaining the temporal progression of the distribution of the liquid amount on the polishing surface from the optical information of multiple points on the polishing surface obtained at the multiple time points.

23. 22. The polishing method according to claim 21, wherein the step of acquiring the optical information is a step of acquiring the optical information while supplying a liquid onto the polishing surface during an interval before or after polishing of the object to be polished.

24. A polishing method for polishing an object to be polished, comprising: While supplying a liquid onto a polishing surface of an unused polishing pad, initial optical information is acquired at a plurality of points on the polishing surface; determining an initial distribution of the amount of liquid on the polishing surface from the initial optical information; a polishing table supporting the polishing pad and a polishing head are rotated, and the polishing head presses the object to be polished against the polishing surface of the polishing pad to polish the object; While supplying a liquid onto the polishing surface of the polishing pad in use for polishing, current optical information of a plurality of points on the polishing surface is acquired; determining a current distribution of the liquid volume on the polishing surface from the current optical information; A polishing method comprising calculating a difference between the initial distribution and the current distribution.

25. 24. The polishing method according to claim 23, wherein the liquid supplied onto the polishing surface of the polishing pad while the optical information is being acquired is a different type of liquid from the polishing liquid used to polish the workpiece.

26. 22. The polishing method according to claim 21, wherein the optical information is the amount of light from the polishing surface.

27. The polishing method according to claim 21 , wherein the optical information is a color distribution of the polished surface.

28. 22. The polishing method according to claim 21, wherein the step of acquiring optical information is a step of acquiring optical information of the plurality of points within a monitoring area located upstream of the polishing head in the rotation direction of the polishing table.

29. calculating the difference between a plurality of distributions of the amount of liquid determined at a plurality of times during polishing of the workpiece; 23. The polishing method according to claim 22, further comprising the step of changing polishing conditions for the workpiece to reduce the distribution difference when the distribution difference is greater than an allowable value.

30. After changing the polishing conditions, recalculating the differences between the plurality of distributions of the liquid amount determined at the plurality of time points during polishing of the workpiece; 30. The polishing method according to claim 29, further comprising the step of stopping operation of the polishing apparatus before polishing a next object to be polished if the distribution difference is greater than an allowable value.

31. calculating the difference between a plurality of distributions of the amount of liquid determined at a plurality of times during polishing of the workpiece; 23. The polishing method according to claim 22, further comprising the step of stopping operation of the polishing apparatus before polishing a next object to be polished if the distribution difference is greater than an allowable value.

32. calculating the difference between a plurality of distributions of the amount of liquid determined at a plurality of times during polishing of the workpiece; 23. The polishing method according to claim 22, further comprising the step of changing a pressing force of the polishing head against the workpiece when the distribution difference is greater than a tolerance value.

33. 25. The polishing method according to claim 24, further comprising a step of changing the polishing conditions for the workpiece in a direction that reduces the distribution difference when the difference between the initial distribution and the current distribution of the liquid amount on the polishing surface is greater than a threshold value.

34. After changing the polishing conditions, recalculating the difference between the initial distribution of the liquid amount on the polishing surface and the newly determined current distribution of the liquid amount; 34. The polishing method according to claim 33, further comprising the step of stopping operation of the polishing apparatus before polishing a next object to be polished if the distribution difference is greater than the threshold value.

35. 25. The polishing method of claim 24, further comprising the step of stopping operation of the polishing apparatus before polishing a next workpiece if the difference between the initial distribution and the current distribution of the liquid amount on the polishing surface is greater than a threshold value.

36. 22. The polishing method according to claim 21, further comprising the step of determining that an abnormality has occurred in the polishing apparatus when the liquid amount distribution falls below a preset threshold distribution of the liquid amount.

37. 22. The polishing method according to claim 21, wherein the liquid is one of a polishing liquid, pure water, a chemical liquid, and colored water.

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