Baking apparatus for handling and uniform baking of substrates

Abstract

Embodiments of the present disclosure relate to a baking apparatus for handling and uniform baking of a substrate, and a method for handling and uniform baking of a substrate. The baking apparatus allows a substrate to be heated to a temperature greater than 50° C. without warping of about 1 mm to about 2 mm from the edge of the substrate to the center of the substrate. The baking apparatus heats the substrate uniformly or substantially uniformly, improving substrate quality.

Description

[Technical Field]

[0001] FIELD OF THE DISCLOSURE

[0001] Embodiments of the present disclosure generally relate to baking apparatus for handling and uniform baking of substrates and methods for handling and uniform baking of substrates. [Background technology]

[0002] In the manufacture of optical devices, substrates may be heated to temperatures greater than 50 degrees Celsius (°C), such as from about 50°C to about 300°C. Substrates, such as glass substrates, may include one or more materials that cause the substrate to warp at temperatures greater than 50°C. The one or more materials may be materials having a refractive index greater than 1.5. When heated to temperatures greater than 50°C, a substrate having a refractive index greater than 1.5 may have a warp of about 1 millimeter (mm) to about 2 mm from the edge of the substrate to the center of the substrate. Thus, when placed on a heated substrate support (such as a vacuum chuck, an electrostatic chuck, or other substrate support operable to hold a substrate and heat the substrate via a heating element disposed therein), the edge of the substrate may not be held on the heated substrate support, resulting in non-uniform temperatures across the surface of the substrate.

[0003]

[0003] For example, during post-apply bake (PAB), non-uniform temperatures across the surface of a substrate can cause non-uniform removal of solvent from the resist material disposed on the surface of the substrate, resulting in a non-uniform resist layer. For example, during post-exposure bake (PEB), non-uniform temperatures across the surface of a substrate can result in non-uniform development (e.g., patterning) of the resist layer. Therefore, there is a need in the art for baking apparatuses and methods for substrate handling and uniform baking. Summary of the Invention

[0004] In one embodiment, an apparatus is provided. The apparatus includes a substrate holding assembly disposed on a base. The substrate holding assembly includes two or more shafts. Each of the two or more shafts has an extension disposed thereon. The extension of each of the two or more shafts is operable to support one or more substrates disposed between the two or more shafts. The apparatus further includes a lid. The lid includes one or more heating elements disposed therein. The apparatus further includes a process space created between the lid and the base.

[0005] In another embodiment, an apparatus is provided. The apparatus includes a substrate support disposed on a base. The substrate support includes one or more heating elements and lift pins operable to support a substrate. The apparatus further includes a lid. An edge brace is coupled to the lid. The edge brace includes a ring. The apparatus further includes a process space created between the lid and the base.

[0006] In yet another embodiment, a method is provided. The method includes placing one or more substrates on a substrate support assembly of a baking apparatus. The method further includes lowering a lid of the baking apparatus to create a process space within the baking apparatus. The method further includes heating the process space with one or more heating elements of the baking apparatus. The heating elements uniformly or substantially uniformly heat the one or more substrates.

[0007]

[0007] In order that the above-mentioned features of the present disclosure may be understood in detail, the disclosure briefly summarized above will now be more particularly described with reference to embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the accompanying drawings show only exemplary embodiments and therefore should not be considered to limit the scope of the present disclosure, as other equally effective embodiments may also be acceptable. [Brief explanation of the drawings]

[0008] [Figure 1A]

[0008] FIG. 1 is a schematic cross-sectional view of a baking apparatus according to one embodiment. [Figure 1B] 1 is a schematic cross-sectional view of a baking apparatus according to one embodiment. [Figure 2A]

[0009] 1 is a schematic cross-sectional view of a baking apparatus according to one embodiment. [Figure 2B] 1 is a schematic cross-sectional view of a baking apparatus according to one embodiment. [Figure 3]

[0010] FIG. 1 is a flow diagram of a method for baking one or more substrates in a baking apparatus according to one embodiment. [Figure 4A]

[0011] 1 is a schematic cross-sectional view of a baking apparatus according to one embodiment. [Figure 4B] 1 is a schematic cross-sectional view of a baking apparatus according to one embodiment. [Figure 4C]

[0012] FIG. 1 is a schematic bottom view of an edge brace according to one embodiment. [Figure 5]

[0013] FIG. 1 is a flow diagram of a method for baking a substrate in a baking apparatus according to one embodiment. [Figure 6A]

[0014] 1 is a schematic exploded view of a device according to one embodiment. [Figure 6B]

[0015] FIG. 2 is a schematic top view of a device according to one embodiment. [Figure 6C]

[0016] 1 is a schematic cross-sectional view of a device according to one embodiment. [Figure 7]

[0017] FIG. 1 is a baking flow diagram for heating a substrate in a baking apparatus according to one embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0009]

[0018] For ease of understanding, where possible, the same reference numerals have been used to designate identical elements that are common to multiple figures. It is believed that elements and features of one embodiment may be beneficially incorporated in other embodiments without additional recitation.

[0010]

[0019] Embodiments of the present disclosure generally relate to a baking apparatus and method for handling and uniformly baking a substrate. The baking apparatus allows a substrate to be heated to a temperature greater than 50° C. without warping of about 1 mm to about 2 mm from the edge of the substrate to the center of the substrate. The baking apparatus provides uniform or substantially uniform heating of the substrate, improving substrate quality.

[0011]

[0020] 1A and 1B are schematic cross-sectional views of a baking apparatus 100. The baking apparatus 100 includes a base 102, a lid 104, and a substrate holding assembly 112. The substrate holding assembly 112 includes two or more shafts 114 having one or more extensions 116 coupled thereto. The shafts 114 each have a shaft height 115. In one embodiment, which can be combined with other embodiments described herein, the shaft height is between about 0.5 inches and about 5 inches.

[0012]

[0021] One or more extensions 116 of each shaft 114 are coupled to each other in an opposing relationship so that one or more substrates 101 are supported by the extensions 116. The extensions 116 contact a portion of each edge of the substrates 101. Although only three pairs of extensions 116 are shown in FIGS. 1A and 1B, more or fewer pairs of extensions 116 may be included in the baking apparatus 100. The number of pairs of extensions 116 corresponds to the number of substrates 101 in the baking apparatus 100. Each extension 116 has an extension width 117. The extension width 117 corresponds to the portion of the substrate 101 that contacts the extension 116. In one embodiment, which can be combined with other embodiments described herein, the extension width 117 is between about 1 mm and about 10 mm. The width 119 is defined between the ends of the extensions 116 that are positioned opposite each other. Width 119 corresponds to the portion of substrate 101 that does not contact extension 116. Width 119 is between about 198 mm and about 298 mm. Although only three substrates 101 are shown in FIG. 1B, baking apparatus 100 can be configured to hold more than three substrates 101. For example, baking apparatus 100 can be configured to hold one to five substrates 101.

[0013]

[0022] In one embodiment that can be combined with other embodiments described herein, the one or more substrates 101 include one or more materials that warp at temperatures above 50°C, such as from about 50°C to about 300°C. In another embodiment that can be combined with other embodiments described herein, the one or more substrates 101 include, but are not limited to, at least one of an amorphous dielectric, an amorphous dielectric, a crystalline dielectric, a silicon oxide, a polymer, and combinations thereof. For example, the one or more substrates 101 include, but are not limited to, at least one of a glass, a plastic, and a polycarbonate material that warps at temperatures above 50°C. In yet another embodiment that can be combined with other embodiments described herein, the one or more substrates 101 include, but are not limited to, at least one of an oxide, a sulfide, a phosphide, a telluride, and combinations thereof. In one example, the substrate 101 includes at least one of silicon (Si), silicon dioxide (SiO), sapphire, and a material containing a high refractive index transparent material. In yet another embodiment, which may be combined with other embodiments described herein, the substrate 101 has a refractive index greater than 1.5. In yet another embodiment, which may be combined with other embodiments described herein, the substrate 101 comprises a glass material having a refractive index greater than 1.5.

[0014]

[0023] In one embodiment that can be combined with other embodiments described herein, substrate 101 has a thickness of less than about 1 mm. In one embodiment that can be combined with other embodiments described herein, substrate 101 has a diameter of about 200 mm. In another embodiment that can be combined with other embodiments described herein, substrate 101 has a diameter of about 300 mm. In another embodiment that can be combined with other embodiments described herein, substrate 101 has a diameter of about 4 inches to about 12 inches.

[0015]

[0024] The lid 104 includes an actuator 108 operable to raise and lower the lid 104 from a raised position (shown in FIG. 1A ) to a lowered position (shown in FIG. 1B ). The lid 104 in the raised position allows one or more substrates 101 to be transferred to and from the baking apparatus 100. In one embodiment, which may be combined with other embodiments described herein, the one or more substrates 101 are transferred to and from the baking apparatus 100 using a transfer robot. The lid 104 in the lowered position contacts the base 102 such that a process space 103 is created between the lid 104 and the base 102. The process space 103 provides a uniform or substantially uniform temperature distribution inside the process space of the baking apparatus 100. The process space 103 may be heated by various heat sources. In one embodiment, which may be combined with other embodiments described herein, one or more heating elements 106 are disposed within the lid 104. The one or more heating elements 106 include, but are not limited to, ceramic heaters, rubber heaters, and fiberglass heaters. The heating elements 106 are operable to heat the process space 103 to between about 50° C. and about 600° C. The heating elements 106 heat the process space 103 such that each of the one or more substrates 101 is uniformly or substantially uniformly heated. Furthermore, the uniform or substantially uniform temperature distribution within the process space 103 exposes each portion of the one or more substrates 101 to the same temperature. For example, the portion of the one or more substrates 101 disposed on the extension 116 is heated to the same temperature as the portion of the one or more substrates 101 corresponding to the width 119.

[0016]

[0025] By exposing each portion of the substrate 101 to the same temperature, the one or more substrates 101 can be heated to temperatures exceeding 50° C. without warping. The warping of the one or more substrates 101 is generally about 1 mm to about 2 mm from the edge of the substrate 101 to the center of the substrate 101. During a post-apply bake (PAB), for example, a uniform or substantially uniform temperature across the entire surface of the one or more substrates 101 provides a uniform or substantially uniform resist layer on the one or more substrates 101. During a post-exposure bake (PEB), for example, a uniform or substantially uniform temperature across the entire surface of the one or more substrates 101 provides a uniform or substantially uniform development (e.g., patterning) of the resist layer on the one or more substrates 101.

[0017]

[0026] In one embodiment that can be combined with other embodiments described herein, the temperature to which the one or more substrates 101 are exposed in the process space 103 is increased from about 40° C. to about 800° C. The rapid temperature increase bakes the one or more substrates 101. In another embodiment that can be combined with other embodiments described herein, the temperature to which the one or more substrates 101 are exposed in the process space 103 is decreased from about 800° C. to about 40° C. The rapid cooling of the one or more substrates is performed in preparation for transferring the one or more substrates from the process space 103. In another embodiment that can be combined with other embodiments described herein, the temperature to which the one or more substrates 101 are exposed in the process space 103 is maintained between about 80° C. and about 150° C. during the PEB process. In yet another embodiment that can be combined with other embodiments described herein, the temperature to which the substrates 101 are exposed in the process space 103 is maintained between about 80° C. and about 300° C. during the PAB process. 1A and 1B includes a controller 110 for controlling the operation of the baking apparatus 100 and methods described herein. For example, the controller 110 is operable to adjust the temperature of the process space 103 to correspond to a desired temperature of the process space 103.

[0018]

[0027] 2A and 2B are schematic cross-sectional views of a baking apparatus 200. The baking apparatus 200 includes a base 202, a lid 204, and a substrate holding assembly 112 as described herein. The lid 204 includes an actuating door 208 operable to move from an open position (shown in FIG. 2A ) to a closed position (shown in FIG. 2B ). The lid 204 in the open position allows substrates 101 to be transferred to and from the baking apparatus 200. In one embodiment, which can be combined with other embodiments described herein, one or more substrates 101 are transferred to and from the baking apparatus 200 using a transfer robot. The actuating door 208 in the closed position contacts the lid 204 such that a process space 103 is created between the lid 204 and the base 202. The process space 103 provides a uniform or substantially uniform temperature distribution inside the process space 103 of the baking apparatus 200. The process space 103 may be heated by a variety of heat sources. In one embodiment, which may be combined with other embodiments described herein, one or more heating elements 106 are disposed within the lid 204. The one or more heating elements 106 are operable to heat the process space 103 to between about 50° C. and about 600° C. The heating elements 106 heat the process space 103 such that each substrate 101 of the one or more substrates 101 is heated equally.

[0019]

[0028] In one embodiment, which can be combined with other embodiments described herein, the temperature to which the one or more substrates 101 are exposed in the process space 103 is increased from about 40° C. to about 800° C. In another embodiment, which can be combined with other embodiments described herein, the temperature to which the one or more substrates 101 are exposed in the process space 103 is decreased from about 800° C. to about 40° C. In another embodiment, which can be combined with other embodiments described herein, the temperature to which the one or more substrates 101 are exposed in the process space 103 is maintained between about 80° C. and about 150° C. during the PEB process. In yet another embodiment, which can be combined with other embodiments described herein, the temperature to which the substrates 101 are exposed in the process space 103 is maintained between about 80° C. and about 300° C. during the PAB process. The embodiment of the baking apparatus 200 in FIGS. 2A and 2B includes a controller 210 for controlling the operation of the baking apparatus 200 and methods described herein.

[0020]

[0029] 3 is a flow diagram of a method 300 for baking one or more substrates 101 in the baking apparatus 100 or 200. In operation 301, one or more substrates 101 are transferred into the baking apparatus 100 or 200. Each substrate 101 of the one or more substrates 101 is placed on the extension 116. In operation 302, the baking apparatus 100 or 200 moves from an open position to a closed position. In one embodiment, which can be combined with other embodiments described herein, the lid 104 is lowered to the closed position by the actuator 108. The lid 104 contacts the base 102, creating the process space 103. In another embodiment, which can be combined with other embodiments described herein, the actuated door 208 is lowered to the closed position. The actuated door 208 contacts the lid 204, creating the process space 103.

[0021]

[0030] In operation 303, the process space 103 is heated. The process space 103 is heated by one or more heating elements 106. The one or more heating elements 106 are disposed in the lid 104 or lid 204. Each of the one or more substrates 101 is heated equally to a desired temperature within the process space 103. Equal heating of the one or more substrates 101 prevents warping of the one or more substrates 101. In operation 304, the baking apparatus 100 or 200 moves from a closed position to an open position. In one embodiment, which can be combined with other embodiments described herein, the lid 104 is raised to the open position (shown in FIG. 1A ) by the actuator 108. In another embodiment, which can be combined with other embodiments described herein, the actuated door 208 is raised to the open position (shown in FIG. 2A ). The one or more substrates 101 can be removed from the process space 103. Controller 110 and controller 210 are in communication with baking apparatus 100 and baking apparatus 200. Controller 110 and controller 210 control the operation of method 300 and facilitate the baking process.

[0022]

[0031] 4A and 4B are schematic cross-sectional views of a baking apparatus 400. FIG. 4C is a schematic bottom view of an edge brace 424 of the baking apparatus 400. The baking apparatus 400 includes a base 402, a lid 404, and a substrate support 416. The substrate support 416 may be one of a vacuum chuck, an electrostatic chuck, or any other substrate support operable to hold a substrate 101 described herein. The substrate support 416 is operable to heat the substrate 101 via a heating element 106 disposed therein. The one or more heating elements 106 include, but are not limited to, a ceramic heater, a rubber heater, and a fiberglass heater.

[0023]

[0032] In one embodiment, which can be combined with other embodiments described herein, the temperature to which the substrate 101 is exposed by the substrate support 416 is increased from about 40° C. to about 800° C. In another embodiment, which can be combined with other embodiments described herein, the temperature to which the substrate 101 is exposed by the substrate support 416 is decreased from about 800° C. to about 40° C. In another embodiment, which can be combined with other embodiments described herein, the temperature to which the substrate 101 is exposed by the substrate support 416 is maintained at about 80° C. to about 150° C. during the PEB process. In yet another embodiment, which can be combined with other embodiments described herein, the temperature to which the substrate 101 is exposed by the substrate support 416 is maintained at about 80° C. to about 300° C. during the PAB process.

[0024]

[0033] The lid 404 includes an actuator 408 operable to raise and lower the lid 404 from a raised position (shown in FIG. 4A ) to a lowered position (shown in FIG. 4B ). The lid 404 in the raised position allows the substrate 101 to be transferred to and from the baking apparatus 400 and placed on the substrate support 416. In an embodiment that can be combined with other embodiments described herein, the substrate 101 is transferred to and from the baking apparatus 400 using a transfer robot. In an embodiment that can be combined with other embodiments described herein, the substrate support 416 includes one or more lift pins 422. The lift pins 422 support the substrate 101. In the closed position, the lid 404 contacts the base 402 such that a process space 103 is created between the lid 404 and the base 402.

[0025]

[0034] In the closed position, a ring 426 of the edge brace 424 contacts an edge portion of the substrate 101. The edge brace 424 is coupled to the lid 404. The ring 426 of the edge brace 424 contacting the edge portion of the substrate 101 presses the edge portion of the substrate 101 against the surface of the substrate support 416. The substrate 101 experiences a uniform or substantially uniform temperature distribution when the substrate 101 is heated by the substrate support 416. In one embodiment, which can be combined with other embodiments described herein, the lift pins 422 are retracted into the substrate support 416 when in the closed position. The lift pins 422 are retracted so that the substrate 101 is in direct contact with the substrate support 416.

[0026]

[0035] The ring 426 of the edge brace 424 has a ring width 427. The ring width 427 corresponds to the diameter of the substrate 101. For example, the ring width 427 is between about 200 mm and about 300 mm. The ring 426 may have a variety of surface profiles 428 that contact the edge portion of the substrate 101 and uniformly or substantially uniformly press the edge portion of the substrate 101 against the surface of the substrate support 416. The surface profiles 428 include, but are not limited to, rectangular, triangular, or trapezoidal. The embodiment of the baking apparatus 400 of FIGS. 4A-4C includes a controller 410 for controlling the operation of the baking apparatus 400 and methods described herein.

[0027]

[0036] By heating each portion across the surface of the substrate 101 to the same temperature, the substrate 101 can be heated to a temperature greater than 50° C. The heating elements 106 heat the process space 103 to between about 50° C. and about 600° C. During PAB, for example, a uniform or substantially uniform temperature across the surface of the substrate 101 provides a uniform or substantially uniform resist layer on the substrate 101. During PEB, for example, a uniform or substantially uniform temperature across the surface of the substrate 101 provides a uniform or substantially uniform development (e.g., patterning) of the resist layer on the substrate.

[0028]

[0037] 5 is a flow diagram of a method 500 for baking one or more substrates 101 in a baking apparatus 400. In operation 501, the substrate 101 is transferred into the baking apparatus 400. The substrate 101 is placed on the substrate support 416. In operation 502, the baking apparatus 400 moves from an open position to a closed position. The lid 404 and ring 426 are lowered. The lid 404 is lowered by the actuator 408 so that the lid 404 contacts the base 402, creating a process space 103. The ring 426 is lowered so that the ring 426 contacts the substrate 101. In operation 503, the process space 103 is heated. The process space 103 is heated by one or more heating elements 106 in the substrate support 416. The substrate 101 is heated uniformly or substantially uniformly within the process space 103. The entire surface of the substrate 101 contacts the substrate support 416 due to the force applied by the ring 426. In operation 504, the lid 404 is raised. The lid 404 is raised by the actuator 408 so that the baking apparatus 400 is in the open position (shown in FIG. 4A ). The substrate 101 can be removed from the process space 103. A controller 410 controls the operation of the method 500. The controller 410 communicates with the lid 404 and the base 402 such that the controller can control the baking apparatus 400 and facilitate the baking process.

[0029]

[0038] FIG. 6A is a schematic exploded view of device 600. FIG. 6B is a schematic top view of device 600. FIG. 6C is a schematic cross-sectional view of device 600. Device 600 includes a holding plate 604 and a heating plate 602. Holding plate 604 includes a conductive material such as, but not limited to, ceramic, mica, or a mixture of ceramic and metal materials. Holding plate 604 has a holding plate width 605. Holding plate width 605 is between about 202 mm and about 350 mm. In one embodiment, which can be combined with other embodiments described herein, a transfer robot places substrate 101 on holding plate 604. In that embodiment, holding plate 604 moves on a track and is positioned above heating plate 602. In another embodiment, which can be combined with other embodiments described herein, heating plate 602 moves on a track and is positioned below holding plate 604. In one embodiment, which can be combined with other embodiments described herein, the substrate 101 is placed on a holding plate 604 having a heating plate 602 thereunder. In yet another embodiment, which can be combined with other embodiments described herein, the holding plate 604 and heating plate 602 move on tracks to be properly positioned relative to one another.

[0030]

[0039] The holding plate 604 is a vacuum chuck, an electrostatic chuck, or any other substrate support operable to hold the substrate 101 described herein. In one embodiment, as shown in FIGS. 6A and 6C , the holding plate 604 includes a vacuum system 606 having one or more channels 608 coupled to a pump 612. The pump is operable to provide a negative pressure through the channels 608 to hold the substrate 101. The holding plate 604 has a thickness 614 that allows heat provided by the heating plate 602 to dissipate uniformly or substantially uniformly throughout the holding plate 604. The thickness 614 is between about 1 cm and about 10 cm. The heating plate 602 is operable to heat the substrate 101 via a heating element 106 disposed therein. The substrate 101 experiences a uniform or substantially uniform temperature distribution when the substrate 101 is heated by the holding plate 604. The vacuum system 606 holds the substrate 101 so that the heating plate 602 is in contact with the entire surface of the substrate 101. Thus, the entire surface of the substrate 101 is heated uniformly or substantially uniformly.

[0031]

[0040] As described above, by heating each portion across the surface of the substrate 101 to the same temperature, the substrate 101 can be heated to a temperature greater than 50° C. without warping of about 1 mm to about 2 mm from the edge of the substrate 101 to the center of the substrate 101. In one embodiment, which can be combined with other embodiments described herein, the device 600 can be utilized in the baking apparatus 400. For example, the holding plate 604 and the heating plate 602 can replace the substrate support 416 of the baking apparatus 400.

[0032]

[0041] In one embodiment, which can be combined with other embodiments described herein, the temperature to which the one or more substrates 101 are exposed in the process space 103 is increased from about 40° C. to about 800° C. In another embodiment, which can be combined with other embodiments described herein, the temperature to which the one or more substrates 101 are exposed in the process space 103 is decreased from about 800° C. to about 40° C. In another embodiment, which can be combined with other embodiments described herein, the temperature to which the one or more substrates 101 are exposed in the process space 103 is maintained between about 80° C. and about 150° C. during the PEB process. In yet another embodiment, which can be combined with other embodiments described herein, the temperature to which the substrates 101 are exposed in the process space 103 is maintained between about 80° C. and about 300° C. during the PAB process. The embodiment of the device 600 in FIGS. 6A-6C includes a controller 610 for controlling the operation of the device 600 and methods described herein.

[0033]

[0042] 7 is a flow diagram of a method 700 for heating a substrate 101 in a device 600. In operation 701, the substrate 101 is placed on a heating plate 602 and a holding plate 604. The heating plate 602 and the holding plate 604 may be positioned relative to each other by moving on a track. The holding plate 604 is placed on the heating plate 602. The substrate 101 is positioned by a transfer robot. In operation 702, the substrate 101 is held on the holding plate 604 by a vacuum system 606. The vacuum system 606 utilizes a pump 612 to provide negative pressure through a channel 608 to hold the substrate 101 on the holding plate 604. In operation 703, the heating plate 602 provides heat to the substrate 101. The heat from the heating plate 602 passes through the holding plate 604 to heat the substrate 101. In operation 704, the substrate 101 is removed from the device 600. In one embodiment, which may be combined with other embodiments described herein, prior to operation 703, a ring, such as ring 426 from baking apparatus 400, is lowered into contact with substrate 101. Ring 426 and vacuum system 606 hold substrate 101 on holding plate 604 to prevent substrate 101 from warping. As such, substrate 101 is heated uniformly or substantially uniformly.

[0034]

[0043] In summary, a baking apparatus and method for handling and uniformly or substantially uniformly baking a substrate are described herein. The baking apparatus allows a substrate to be heated to a temperature greater than 50°C without warping of about 1 mm to about 2 mm from the edge of the substrate to the center of the substrate. The baking apparatus heats the substrate uniformly or substantially uniformly, improving the quality of the substrate.

[0035]

[0044] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from the basic scope thereof, the scope of which is defined by the claims that follow.

Claims

1. two or more shafts, each of the two or more shafts having an extension disposed thereon, the extension of each of the two or more shafts operable to support one or more substrates disposed between the two or more shafts, each of the two or more shafts having a first end and a second end; a lid including one or more heating elements disposed therein, an actuator operable to move the lid from a raised position to a lowered position, the lid in the lowered position contacting a base to create a process space between the lid and the base, the second ends of the two or more shafts contacting the same base contacted by the lid; an actuating door coupled to the lid, the actuating door operable to move from an open position to a closed position, the actuating door contacting the lid in the closed position to create the process space between the lid, the two or more shafts, and the base; Equipped with The device, wherein the lid contacts the two or more shafts.

2. 10. The apparatus of claim 1, wherein the process space is capable of being heated to a temperature between 50°C and 600°C.

3. The apparatus of claim 1 , wherein the one or more heating elements include a ceramic heater, a rubber heater, and a fiberglass heater.

4. The device of claim 1 , wherein each shaft of the two or more shafts includes between 1 and 5 extensions.

5. 1. An apparatus comprising: a substrate support disposed on a base, a lid, and a process space, The substrate support comprises: one or more heating elements, and lift pins operable to support the substrate; The lid is an edge brace coupled to the lid, the edge brace extending between the lid and the substrate support, the edge brace including a continuous ring having an inner diameter and an outer diameter corresponding to an outer diameter of the substrate; an actuator operable to move the lid from a raised position to a lowered position to move the ring from a first position above the substrate at a first distance from the substrate to a second position above the substrate at a second distance from the substrate and lower than the first position; The apparatus, wherein the process space is created between the lid and the base when the lid in the lowered position contacts the base.

6. The apparatus of claim 5 , further comprising a retaining plate disposed on the substrate support.

7. The apparatus of claim 6 , wherein the retaining plate has a channel disposed therethrough, the channel communicating with a pump to create a reduced pressure system.

8. The apparatus of claim 7 , wherein the retaining plate comprises ceramic, mica, or a mixture of ceramic and metallic materials.

9. The apparatus of claim 8 , wherein the retaining plate is positioned relative to the one or more heating elements by a track.

10. The apparatus of claim 9 , wherein the one or more heating elements are heating plates.

11. placing one or more substrates on extensions of two or more shafts in a baking apparatus, the extensions of each of the two or more shafts being operable to support the one or more substrates disposed between the two or more shafts, the two or more shafts contacting a base of the baking apparatus, and each of the two or more shafts having a first end and a second end; Creating a process space within the baking apparatus, moving a lid of the baking apparatus between a raised position and a lowered position via an actuator, wherein the lid in the lowered position contacts the base to create the process space between the lid and the base, and the second ends of the two or more shafts contact the same base as the lid; generating a process space, including one of: moving an actuating door coupled to the lid from an open position to a closed position, the actuating door being in contact with the lid in the closed position to create the process space between the lid, the two or more shafts, and the base; and heating the process space using one or more heating elements disposed in the lid of the baking apparatus, the heating elements providing uniform or substantially uniform heating to the one or more substrates; The method wherein the lid contacts the two or more shafts.

12. The method of claim 11 , further comprising: lifting the lid of the baking apparatus to remove the one or more substrates.

13. 12. The method of claim 11, wherein heating the process space comprises increasing the temperature in the process space from 40°C to 800°C.

14. 12. The method of claim 11, wherein heating the process space comprises reducing the temperature in the process space from 800°C to 40°C.

15. 12. The method of claim 11, wherein heating the process space comprises maintaining a temperature in the process space between 80°C and 300°C.

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