Semiconductor manufacturing apparatus and semiconductor device manufacturing method

Abstract

To provide a technique capable of suppressing a semiconductor wafer from cracking and breaking in a process of discharging the semiconductor wafer.SOLUTION: A semiconductor manufacturing apparatus comprises: a chuck stage 10 which is provided with a plurality of grooves 12 on a wafer mount surface 11; and a cleaning temperature controller 50 which controls the flow rate of a refrigerant gas to blow the refrigerant gas from air blow holes 16 provided to the respective grooves 12 to a semiconductor wafer 1, suck the refrigerant gas having circulated along the respective grooves 12 from a discharge hole 17 provided to the respective grooves 12, and then discharge the refrigerant gas from the respective grooves 12. The respective grooves 12 are provided with a plurality of sets of air blow holes 16 blowing the refrigerant gas in a first direction tilting obliquely to the direction from a second principal surface 1b to a first principal surface 1a and discharge holes 17 sucking the refrigerant gas from a second direction tilting obliquely to the direction from the second principal surface 1b to the first principal surface 1a and crossing the first direction and then discharging the refrigerant gas from the respective grooves 12.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present disclosure relates to a semiconductor manufacturing apparatus and a method for manufacturing a semiconductor device. [Background technology]

[0002] Conventionally, in a method for controlling the temperature by circulating cooling water within a chuck stage during a laser annealing process, which is part of the semiconductor device manufacturing process, the semiconductor wafer placed on the wafer mounting surface of the chuck stage is indirectly cooled. Because the cooling capacity for the semiconductor wafer is insufficient, the heat of the laser beam raises the temperature of the semiconductor wafer, causing the protective film of the semiconductor wafer in contact with the wafer mounting surface of the chuck stage to melt. Because the melted protective film acts as an adhesive, there is a problem in that the semiconductor wafer sticks to the chuck stage during the semiconductor wafer removal process, causing cracks or breakage in the semiconductor wafer.

[0003] In order to solve this problem, a method of cooling a semiconductor wafer using gas has been proposed (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2011-086677 Summary of the Invention [Problem to be solved by the invention]

[0005] However, in conventional devices, the gas is blown perpendicular to the direction from the bottom to the top of the semiconductor wafer, which means that the semiconductor wafer cannot be cooled sufficiently and efficiently. During the laser annealing process, the chuck stage becomes very hot due to the heat of the laser beam, and the protective film in contact with the wafer-mounting surface of the chuck stage can melt due to the heat. As a result, during the semiconductor wafer removal process, the semiconductor wafer sticks to the chuck stage, and cracks or breaks still occur in the semiconductor wafer.

[0006] Therefore, an object of the present disclosure is to provide a technique capable of suppressing the occurrence of cracks and breakage in semiconductor wafers during the semiconductor wafer discharge process. [Means for solving the problem]

[0007] A semiconductor manufacturing apparatus according to the present disclosure includes a wafer mounting surface on which a semiconductor wafer is placed, the semiconductor wafer having a first main surface and a second main surface opposite the first main surface and a protective film formed on the second main surface, and a chuck stage having a plurality of grooves formed on the wafer mounting surface; and a control unit connected to the chuck stage and configured to control a flow rate of the refrigerant gas so that the refrigerant gas is blown onto the semiconductor wafer from an air outlet formed in each of the grooves and the refrigerant gas that has circulated along the grooves is sucked through an outlet formed in each of the grooves and discharged from each of the grooves, and each of the grooves is provided with a plurality of pairs of air outlets that blow the refrigerant gas in a first direction that is obliquely inclined with respect to a direction from the second main surface to the first main surface, and a plurality of pairs of outlets that suck the refrigerant gas in a second direction that is obliquely inclined with respect to the direction from the second main surface to the first main surface and intersects with the first direction, and discharge the refrigerant gas from each of the grooves. [Effects of the Invention]

[0008] According to the present disclosure, the semiconductor wafer can be cooled sufficiently and efficiently, thereby preventing the protective film on the semiconductor wafer from dissolving. This prevents the semiconductor wafer from sticking to the chuck stage during the semiconductor wafer ejection process, thereby preventing cracks and breakage from occurring in the semiconductor wafer. [Brief explanation of the drawings]

[0009] [Figure 1] 2 is a cross-sectional view of a chuck stage and a cooling temperature regulator included in the semiconductor manufacturing apparatus according to the embodiment. FIG. [Figure 2] 1 is a top view of a semiconductor manufacturing apparatus according to an embodiment; [Figure 3] 1 is a cross-sectional view of a semiconductor manufacturing apparatus according to an embodiment. [Figure 4] 5 is an explanatory diagram for explaining the flow of refrigerant gas around a semiconductor wafer in an embodiment. FIG. [Figure 5] FIG. 10 is a top view of a semiconductor manufacturing apparatus according to a first modified example of the embodiment. [Figure 6] FIG. 10 is a top view of a semiconductor manufacturing apparatus according to a second modification of the embodiment. [Figure 7] FIG. 10 is an explanatory view for explaining the flow of refrigerant gas around a semiconductor wafer in the second modification of the embodiment. [Figure 8] FIG. 11 is a top view of a semiconductor manufacturing apparatus according to a third modified example of the embodiment. [Figure 9] FIG. 11 is a cross-sectional view of a chuck stage and a heat dissipation fin provided in a semiconductor manufacturing apparatus according to a third modification of the embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0010] <Embodiment> An embodiment will be described below with reference to the drawings. FIG. 1 is a cross-sectional view of a chuck stage 10 and a cooling temperature regulator 50 provided in a semiconductor manufacturing apparatus according to the embodiment. FIG. 2 is a top view of the semiconductor manufacturing apparatus according to the embodiment. FIG. 3 is a cross-sectional view of the semiconductor manufacturing apparatus according to the embodiment. Note that FIG. 3 shows a state in which the chuck stage 10 and the cooling temperature regulator 50 of FIG. 1 are connected.

[0011] 1, 2, and 3, the semiconductor manufacturing apparatus is a laser annealing apparatus that performs a laser annealing process, which is part of the manufacturing process of a semiconductor device. The semiconductor manufacturing apparatus includes a chuck stage 10 and a cooling temperature regulator 50.

[0012] The chuck stage 10 includes a wafer mounting surface 11 on which the semiconductor wafer 1 is placed, a plurality of grooves 12, an air supply path 13, an exhaust path 14, an adsorption air exhaust path 15, an air supply port 16, an exhaust port 17, an adsorption port 18, a refrigerant gas inlet port 13a, a refrigerant gas outlet port 14a, and an adsorption air outlet port 15a.

[0013] First, the semiconductor wafer 1 mounted on the chuck stage 10 will be described. The semiconductor wafer 1 has a first main surface 1a and a second main surface 1b opposite to the first main surface 1a. A semiconductor functional layer such as a semiconductor element (not shown) is formed on the second main surface 1b of the semiconductor wafer 1. Before the laser annealing step, a protective film 2 is formed on the second main surface 1b of the semiconductor wafer 1. Here, in FIG. 1, the first main surface 1a is the upper surface of the semiconductor wafer 1, and the second main surface 1b is the lower surface of the semiconductor wafer 1.

[0014] The laser annealing process is a process in which, after the implantation process in which impurities are implanted into the first main surface 1a of the semiconductor wafer 1, the semiconductor wafer 1 is placed on the wafer mounting surface 11 of the chuck stage 10, and the impurities are activated by irradiating the first main surface 1a with a laser beam.

[0015] 2, the chuck stage 10 is formed in a circular shape when viewed from the first main surface 1a side of the semiconductor wafer 1 (i.e., when viewed from above). Also, as shown in FIGS. 1 and 3, the entire chuck stage 10 is formed in a cylindrical shape that is short in both the vertical direction.

[0016] 1, 2, and 3, a plurality of grooves 12 are provided in a wafer mounting surface 11. Here, the wafer mounting surface 11 is the upper surface of a chuck stage 10.

[0017] The plurality of grooves 12 includes ring-shaped grooves of different diameters that surround the center of the wafer mounting surface 11. Specifically, the plurality of grooves 12 is composed of a circular groove 12 that includes the center of the wafer mounting surface 11 and four ring-shaped grooves 12 that surround this circular groove 12. The diameters of the four ring-shaped grooves 12 are longer for the grooves 12 that are provided on the outer periphery of the wafer mounting surface 11 than for the grooves 12 that are provided on the inner periphery. The number of grooves 12 is not limited to five, and is preferably changed according to the size of the semiconductor wafer 1.

[0018] Each groove 12 is provided with four pairs of air supply ports 16 and exhaust ports 17. The pairs of air supply ports 16 and exhaust ports 17 are arranged at equal intervals on a circle. Four suction ports 18 are provided between adjacent grooves 12 on the wafer mounting surface 11. The suction ports 18 are arranged at equal intervals on a circle. The number of pairs of air supply ports 16 and exhaust ports 17 may be an even number or an odd number as long as the semiconductor wafer 1 can be cooled evenly. It is preferable to increase the number of pairs as the diameter of the semiconductor wafer 1 increases.

[0019] The air supply path 13, the exhaust path 14, and the suction air exhaust path 15 are provided inside the chuck stage 10. The air supply path 13 is provided to supply refrigerant gas from the cooling temperature regulator 50 to the second main surface 1b side of the semiconductor wafer 1. The air supply path 13 is connected to a refrigerant gas inlet 13a provided on the lower surface of the chuck stage 10 and air outlets 16 provided in each groove 12.

[0020] The discharge path 14 is provided to discharge the refrigerant gas circulated along each groove 12 from each groove 12 to the cooling temperature regulator 50. The discharge path 14 is connected to a refrigerant gas outlet 14a provided on the lower surface of the chuck stage 10 and an outlet 17 provided in each groove 12.

[0021] The suction air discharge path 15 is provided to discharge, through the suction port 18, air present between the protective film 2 formed on the second main surface 1b of the semiconductor wafer 1 and the wafer mounting surface 11, and to suction the second main surface 1b of the semiconductor wafer 1. The suction air discharge path 15 is connected to the suction air outlet 15a provided on the underside of the chuck stage 10 and the suction port 18 provided between adjacent grooves 12 on the wafer mounting surface 11.

[0022] 3, the cooling temperature regulator 50 is connected to the chuck stage 10. Although not shown, an outlet of the cooling temperature regulator 50 is connected to a refrigerant gas inlet 13a of the chuck stage 10, and an inlet of the cooling temperature regulator 50 is connected to a refrigerant gas outlet 14a of the chuck stage 10. The suction air outlet 15a of the chuck stage 10 is connected to a vacuum pump, not shown.

[0023] In addition to controlling the temperature of the refrigerant gas, the cooling temperature regulator 50 is a control device that controls the flow rate of the refrigerant gas so that the internal pressure of the chuck stage 10 is lower than the external pressure, in order to blow the refrigerant gas onto the semiconductor wafer 1 through the air outlets 16 provided in each groove 12 and suck the refrigerant gas circulated along each groove 12 through the outlets 17 provided in each groove 12 and discharge the refrigerant gas from each groove 12. Here, the internal pressure is the product of the pressure of the refrigerant gas supplied to the multiple grooves 12 and the area of ​​the semiconductor wafer 1 in contact with the refrigerant gas. The external pressure is the product of the atmospheric pressure and the area of ​​the chuck stage 10 in contact with the semiconductor wafer 1.

[0024] The semiconductor wafer 1 is placed on the wafer mounting surface 11 of the chuck stage 10 so that the protective film 2 formed on the second main surface 1b of the semiconductor wafer 1 is in contact with the wafer mounting surface 11. The placed semiconductor wafer 1 is adsorbed onto the wafer mounting surface 11 by suction through the suction ports 18.

[0025] Meanwhile, the first main surface 1a of the semiconductor wafer 1 is heat-treated by laser scanning during the laser annealing process. The temperature of the semiconductor wafer 1 rises as a result of the laser scanning, but the semiconductor wafer 1 is cooled by a refrigerant gas supplied from a cooling temperature regulator 50 passing through a refrigerant gas inlet 13a and an airflow path 13 and then blown onto the semiconductor wafer 1 from an airflow outlet 16. The refrigerant gas may be any gas capable of cooling the semiconductor wafer 1, and may be, for example, an inert gas such as N2 gas or Ar.

[0026] The refrigerant gas blown to the semiconductor wafer 1 circulates along each groove 12, is sucked from the discharge port 17, and is discharged to the cooling temperature regulator 50 through the discharge path 14 and the refrigerant gas outlet port 14a. The refrigerant gas discharged to the cooling temperature regulator 50 is temperature-regulated within the cooling temperature regulator 50 and then supplied to the chuck stage 10.

[0027] Next, the flow of the refrigerant gas around the semiconductor wafer 1 will be described with reference to Figures 2 and 4. Figure 4 is an explanatory diagram for explaining the flow of the refrigerant gas around the semiconductor wafer 1 in the embodiment.

[0028] As shown in Fig. 4, blower port 16 faces a first direction so that refrigerant gas can be blown in the first direction, which is a direction obliquely inclined with respect to the direction from second main surface 1b to first main surface 1a. Discharge port 17 faces a second direction so that refrigerant gas can be drawn in from a second direction, which is a direction obliquely inclined with respect to the direction from second main surface 1b to first main surface 1a and intersects with the first direction, and discharged from each groove 12. Here, the first direction is the direction of the left arrow in Fig. 4, and the second direction is the direction of the right arrow in Fig. 4.

[0029] 2 and 4, the refrigerant gas is blown directly onto the protective film 2 of the semiconductor wafer 1 from the first direction and circulates along the grooves 12. The refrigerant gas circulates along the grooves 12 and is discharged from the outlet 17 in the second direction. In this way, the blowing port 16 blows the refrigerant gas in the first direction, and the outlet 17 discharges the refrigerant gas in the second direction. This allows the refrigerant gas to be blown onto the semiconductor wafer 1 more efficiently than when the refrigerant gas is blown perpendicular to the direction from the second main surface 1b to the first main surface 1a.

[0030] Due to the effect of the refrigerant gas blown from the first direction, which is a direction oblique to the direction from the second main surface 1b to the first main surface 1a, the semiconductor wafer 1 can be cooled more sufficiently and efficiently than when the refrigerant gas is blown perpendicular to the direction from the second main surface 1b to the first main surface 1a. This allows the semiconductor wafer 1 to be efficiently adjusted to a desired temperature, and improves the productivity of semiconductor devices with a simple structure. Furthermore, by increasing the air velocity of the refrigerant gas, the semiconductor wafer 1 can be cooled even more efficiently. In particular, by forming the groove 12 in a ring shape, the air velocity when blowing the refrigerant gas can be further efficiently increased.

[0031] <Modification of the embodiment> Next, a modification of the embodiment will be described below: Fig. 5 is a top view of a semiconductor manufacturing apparatus according to a first modification of the embodiment.

[0032] 5, the plurality of grooves 12 may be formed linearly, with each groove 12 provided with a plurality of pairs of air supply ports 16 and exhaust ports 17. In each groove 12, the air supply ports 16 and exhaust ports 17 are preferably provided at the outer periphery and center of the wafer mounting surface 11 in order to uniformly cool the semiconductor wafer 1. Furthermore, by scanning the laser beam in the same direction as the linear grooves 12, the semiconductor wafer 1 can be cooled more sufficiently and efficiently than by scanning in a direction different from the grooves 12.

[0033] When the laser beam is scanned from left to right in FIG. 5, the air supply port 16 and the exhaust port 17 are arranged so that the flow of the refrigerant gas also goes from left to right, whereas when the laser beam is scanned from right to left in FIG. 5, the air supply port 16 and the exhaust port 17 are arranged so that the flow of the refrigerant gas also goes from right to left, thereby enabling the semiconductor wafer 1 to be cooled more efficiently.

[0034] Fig. 6 is a top view of a semiconductor manufacturing apparatus according to Modification 2 of the embodiment. Fig. 7 is an explanatory diagram for explaining the flow of refrigerant gas around semiconductor wafer 1 in Modification 2 of the embodiment.

[0035] 6 and 7, a temperature sensor 20 for detecting the temperature of the semiconductor wafer 1 may be provided in each groove 12 between the air outlet 16 and the air outlet 17. In this case, the cooling temperature regulator 50 controls the flow rate of the refrigerant gas based on the detection result of the temperature sensor 20 so that the semiconductor wafer 1 reaches a set temperature. This makes it possible to control the flow rate of the refrigerant gas to an optimum value in accordance with the temperature of the semiconductor wafer 1.

[0036] Fig. 8 is a top view of a semiconductor manufacturing apparatus according to Modification 3 of the embodiment. Fig. 9 is a cross-sectional view of a chuck stage 10 and a heat dissipation fin 21 provided in the semiconductor manufacturing apparatus according to Modification 3 of the embodiment.

[0037] 8 and 9, in order to more uniformly cool the semiconductor wafer 1, a plurality of heat dissipation fins 21 may be provided on the outer surface of the chuck stage 10. In particular, the chuck stage 10 has a circular shape when viewed from above, and by providing the heat dissipation fins 21 extending from the center of the chuck stage 10 toward the outer periphery at equal intervals along the outer surface of the chuck stage 10, the semiconductor wafer 1 can be cooled more uniformly.

[0038] Furthermore, although not shown, the wafer mounting surface 11 may be coated with a DLC (Diamond Like Carbon) film. This reduces the frictional resistance of the wafer mounting surface 11, and therefore even if the protective film 2 of the semiconductor wafer 1 in contact with the wafer mounting surface 11 is thermally melted, the semiconductor wafer 1 can be prevented from sticking to the wafer mounting surface 11 of the chuck stage 10 during the process of discharging the semiconductor wafer 1. In FIG. 8, the temperature sensor 20 does not have to be provided.

[0039] It is also possible to combine a plurality of the above modifications.

[0040] <Effects> As described above, the semiconductor manufacturing apparatus according to the embodiment and its variants 1 to 3 includes a wafer mounting surface 11 on which a semiconductor wafer 1 is placed, the semiconductor wafer 1 having a first main surface 1a and a second main surface 1b opposite the first main surface 1a and having a protective film 2 formed on the second main surface 1b, and a chuck stage 10 having a plurality of grooves 12 formed in the wafer mounting surface 11; and a cooling temperature regulator 50 connected to the chuck stage 10, which controls the flow rate of the refrigerant gas so that the refrigerant gas is blown onto the semiconductor wafer 1 from the air outlets 16 formed in each groove 12, and the refrigerant gas circulated along each groove 12 is sucked in through the exhaust outlets 17 formed in each groove 12 and discharged from each groove 12. Each groove 12 is provided with a plurality of sets of air outlets 16 that blow refrigerant gas in a first direction, which is a direction obliquely inclined with respect to the direction from the second main surface 1b to the first main surface 1a, and exhaust outlets 17 that suck in refrigerant gas from each groove 12 in a second direction that is obliquely inclined with respect to the direction from the second main surface 1b to the first main surface 1a and intersects with the first direction.

[0041] Furthermore, the manufacturing methods of the semiconductor device according to the embodiment and its modifications 1 to 3 include an implantation step of implanting impurities into the first main surface 1a of the semiconductor wafer 1, and a laser annealing step of placing the semiconductor wafer 1 on the wafer mounting surface 11 of the chuck stage 10 and activating the impurities by irradiating the first main surface 1a with a laser beam. During the laser annealing step, a refrigerant gas circulates along the plurality of grooves 12.

[0042] Therefore, the semiconductor wafer 1 can be cooled sufficiently and efficiently, and the protective film 2 of the semiconductor wafer 1 can be prevented from melting. This prevents the semiconductor wafer 1 from sticking to the chuck stage 10 during the process of discharging the semiconductor wafer 1, and therefore prevents cracks and breaks from occurring in the semiconductor wafer 1. As a result, the yield of the semiconductor wafer 1 is improved, and the yield of the semiconductor device is also improved.

[0043] Furthermore, the plurality of grooves 12 includes ring-shaped grooves of different diameters that surround the center of the wafer mounting surface 11, so that the refrigerant gas can be circulated in a ring-shaped manner through the plurality of grooves 12 in accordance with the shape of the semiconductor wafer 1. This allows for more efficient cooling of the semiconductor wafer 1. Furthermore, since the grooves 12 are formed in a ring shape, the wind speed when blowing the refrigerant gas can be more efficiently improved.

[0044] The semiconductor manufacturing apparatus further includes a temperature sensor 20 that is provided in each groove 12 between the air outlet 16 and the air outlet 17 and detects the temperature of the semiconductor wafer 1, and the cooling temperature regulator 50 controls the flow rate of the refrigerant gas based on the detection result of the temperature sensor 20 so that the semiconductor wafer 1 reaches a set temperature. Therefore, the refrigerant gas can be controlled to an optimal flow rate in accordance with the temperature of the semiconductor wafer 1, further improving the cooling effect of the semiconductor wafer 1.

[0045] Furthermore, the wafer mounting surface 11 is coated with a DLC film, which reduces the frictional resistance of the wafer mounting surface 11. Therefore, even if the protective film 2 of the semiconductor wafer 1 in contact with the wafer mounting surface 11 is thermally melted, the semiconductor wafer 1 can be prevented from sticking to the wafer mounting surface 11 of the chuck stage 10 during the semiconductor wafer 1 ejection process.

[0046] Furthermore, the chuck stage 10 is formed in a circular shape when viewed from the first main surface 1a side of the semiconductor wafer 1, and heat dissipation fins 21 are provided on the outer surface of the chuck stage 10. Therefore, by adding the cooling effect of the heat dissipation fins 21 to the cooling effect of the semiconductor wafer 1 by the chuck stage 10, the cooling effect of the semiconductor wafer 1 can be further enhanced.

[0047] Furthermore, because the refrigerant gas is an inert gas, its ozone depletion potential and global warming potential are both zero, making the product environmentally friendly and reducing the environmental impact.

[0048] The embodiment can be modified as appropriate.

[0049] Various aspects of the present disclosure are summarized below as appendices.

[0050] (Appendix 1) a chuck stage including a wafer mounting surface on which a semiconductor wafer is placed, the semiconductor wafer having a first main surface and a second main surface opposite to the first main surface and a protective film formed on the second main surface, the wafer mounting surface having a plurality of grooves; a control unit connected to the chuck stage and configured to control the flow rate of the refrigerant gas so that the refrigerant gas is blown onto the semiconductor wafer from an air outlet provided in each of the grooves, and the refrigerant gas circulated along each of the grooves is sucked in through an outlet provided in each of the grooves and discharged from each of the grooves; each of the grooves is provided with a plurality of sets of the air outlet that blows the refrigerant gas in a first direction that is obliquely inclined with respect to the direction from the second main surface to the first main surface, and the exhaust outlet that sucks the refrigerant gas from each of the grooves in a second direction that is obliquely inclined with respect to the direction from the second main surface to the first main surface and that intersects with the first direction.

[0051] (Appendix 2) 2. The semiconductor manufacturing apparatus according to claim 1, wherein the plurality of grooves include ring-shaped grooves of different diameters that surround the center of the wafer mounting surface.

[0052] (Appendix 3) a temperature sensor provided in each of the grooves between the air outlet and the exhaust port for detecting a temperature of the semiconductor wafer; 3. The semiconductor manufacturing apparatus according to claim 1, wherein the control unit controls the flow rate of the refrigerant gas based on the detection result of the temperature sensor so that the semiconductor wafer reaches a set temperature.

[0053] (Appendix 4) 4. The semiconductor manufacturing apparatus according to claim 1, wherein the wafer mounting surface is coated with a DLC film.

[0054] (Appendix 5) the chuck stage is formed in a circular shape when viewed from the first main surface side of the semiconductor wafer, 5. The semiconductor manufacturing apparatus according to claim 1, wherein the chuck stage has an outer surface provided with heat dissipation fins.

[0055] (Appendix 6) 6. The semiconductor manufacturing apparatus according to claim 1, wherein the refrigerant gas is an inert gas.

[0056] (Appendix 7) A semiconductor manufacturing method using the semiconductor manufacturing apparatus according to any one of Supplementary Note 1 to Supplementary Note 6, an implantation step of implanting impurities into the first main surface of the semiconductor wafer; a laser annealing step of placing the semiconductor wafer on the wafer mounting surface of the chuck stage and activating the impurities by irradiating the first main surface with a laser beam, The method for manufacturing a semiconductor device, wherein the refrigerant gas circulates along the plurality of grooves during the laser annealing step. [Explanation of symbols]

[0057] 1 semiconductor wafer, 1a first main surface, 1b second main surface, 2 protective film, 10 chuck stage, 11 wafer mounting surface, 12 groove, 16 air outlet, 17 exhaust port, 20 temperature sensor, 21 heat dissipation fin, 50 cooling temperature controller.

Claims

1. a chuck stage including a wafer mounting surface on which a semiconductor wafer is mounted, the semiconductor wafer having a first main surface and a second main surface opposite to the first main surface and a protective film formed on the second main surface, the wafer mounting surface having a plurality of grooves; a control unit connected to the chuck stage and configured to control the flow rate of the refrigerant gas so that the refrigerant gas is blown onto the semiconductor wafer from an air outlet provided in each of the grooves, and the refrigerant gas circulated along each of the grooves is sucked in through an outlet provided in each of the grooves and discharged from each of the grooves; each groove is provided with a plurality of sets of blower ports that blow the refrigerant gas in a first direction that is obliquely inclined with respect to the direction from the second main surface to the first main surface, and exhaust ports that suck the refrigerant gas from each groove in a second direction that is obliquely inclined with respect to the direction from the second main surface to the first main surface and intersects with the first direction.

2. 2. The semiconductor manufacturing apparatus according to claim 1, wherein the plurality of grooves include ring-shaped grooves having different diameters that surround the center of the wafer mounting surface.

3. a temperature sensor provided in each of the grooves between the air outlet and the exhaust port for detecting a temperature of the semiconductor wafer; 2. The semiconductor manufacturing apparatus according to claim 1, wherein the control unit controls the flow rate of the refrigerant gas based on the detection result of the temperature sensor so that the semiconductor wafer reaches a set temperature.

4. 2. The semiconductor manufacturing apparatus according to claim 1, wherein the wafer mounting surface is coated with a DLC film.

5. the chuck stage is formed in a circular shape when viewed from the first main surface side of the semiconductor wafer, 2. The semiconductor manufacturing apparatus according to claim 1, wherein the chuck stage is provided with heat dissipation fins on an outer surface thereof.

6. 6. The semiconductor manufacturing apparatus according to claim 1, wherein the refrigerant gas is an inert gas.

7. A semiconductor manufacturing method using the semiconductor manufacturing apparatus according to claim 1, an implantation step of implanting impurities into the first main surface of the semiconductor wafer; a laser annealing step of placing the semiconductor wafer on the wafer mounting surface of the chuck stage and activating the impurities by irradiating the first main surface with a laser beam, The method for manufacturing a semiconductor device, wherein the refrigerant gas circulates along the plurality of grooves during the laser annealing step.

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