Semiconductor wafer cleaning method and semiconductor wafer manufacturing method

Abstract

To propose a semiconductor wafer cleaning method that can clean a surface of semiconductor wafers more uniformly than conventional methods.SOLUTION: In a semiconductor wafer W cleaning method by supplying a chemical solution to a surface of the semiconductor wafer W while rotating the semiconductor wafer W and cleaning the above surface, before supplying the chemical solution (Figures 1(b) and 1(c)), pure water is supplied to a center of the surface of the semiconductor wafer W while rotating the semiconductor wafer W (Figure 1(a)) and a system switches from supplying pure water to supplying the chemical solution, in the state that a film of pure water is formed on the above surface.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a method for cleaning a semiconductor wafer and a method for manufacturing a semiconductor wafer. [Background technology]

[0002] Conventionally, semiconductor wafers such as silicon wafers have been used as substrates for semiconductor devices. Semiconductor wafers are obtained by wafer processing of single crystal ingots grown by the Czochralski (CZ) method or other methods. During this processing, particles such as polishing powder adhere to the surface of the semiconductor wafer, so the semiconductor wafer is cleaned after processing to remove the particles.

[0003] Semiconductor wafer cleaning methods can be divided into batch methods, in which multiple wafers are cleaned simultaneously, and single-wafer methods, in which wafers are cleaned one by one. Of these, single-wafer cleaning methods have become more popular in recent years because they require a relatively small amount of chemical solution for cleaning, can prevent cross-contamination between wafers, and are difficult to process multiple semiconductor wafers simultaneously due to the increasing diameter of wafers (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2009-290170 Summary of the Invention [Problem to be solved by the invention]

[0005] Incidentally, when semiconductor wafers are cleaned using the single-wafer method, if a chemical solution is supplied to the surface of the semiconductor wafer while the semiconductor wafer is rotating, interference between the supplied chemical solution can cause thick and thin areas of the chemical solution film, a phenomenon known as a hydraulic jump. When a hydraulic jump occurs, turbulence occurs in the area from the center of the semiconductor wafer to approximately 1 / 2 of the radius R of the wafer, making it impossible to uniformly clean the surface of the semiconductor wafer.

[0006] The present invention has been made in view of the above problems, and an object of the present invention is to propose a semiconductor wafer cleaning method that can clean the surface of a semiconductor wafer more uniformly than conventional methods. [Means for solving the problem]

[0007] The present invention, which solves the above problems, is as follows. [1] A method for cleaning a semiconductor wafer, which comprises supplying a chemical solution to a surface of the semiconductor wafer while rotating the semiconductor wafer, to clean the surface, a supply of pure water to the center of the surface of the semiconductor wafer while rotating the semiconductor wafer before supplying the chemical solution, and then switching from supplying the pure water to supplying the chemical solution after forming a film of the pure water on the surface.

[0008] [2] The method for cleaning a semiconductor wafer according to [1] above, wherein the supply of the pure water is carried out while the semiconductor wafer is being rotated at a rotation speed of 100 rpm or less.

[0009] [3] The method for cleaning a semiconductor wafer according to [1] or [2] above, wherein the pure water is supplied at a flow rate of 1.0 L / min or less.

[0010] [4] The method for cleaning a semiconductor wafer according to any one of [1] to [3] above, wherein the pure water is supplied at an angle of 5° or less with respect to a direction perpendicular to the surface of the semiconductor wafer.

[0011] [5] The method for cleaning a semiconductor wafer according to any one of [1] to [4] above, wherein the semiconductor wafer is a silicon wafer.

[0012] [6] A method for producing a semiconductor wafer, characterized in that a semiconductor wafer obtained by subjecting a semiconductor ingot to wafer processing is subjected to a method for cleaning a surface of the semiconductor wafer by the method for cleaning a semiconductor wafer according to any one of [1] to [5] above. [Effects of the Invention]

[0013] According to the present invention, the surface of a semiconductor wafer can be cleaned more uniformly than before. [Brief explanation of the drawings]

[0014] [Figure 1] 1 is a diagram showing a main part of the flow of a semiconductor wafer cleaning method according to the present invention; [Figure 2] FIG. 10 is a diagram showing the number of LPDs for the conventional example and the first example of the invention. [Figure 3] FIG. 10 is a diagram showing the relationship between the angle of supply of pure water relative to the vertical direction of the wafer and the number of LPDs. DETAILED DESCRIPTION OF THE INVENTION

[0015] (Method for cleaning semiconductor wafers) Hereinafter, an embodiment of the present invention will be described with reference to the drawings. A semiconductor wafer cleaning method according to the present invention is a method for cleaning a semiconductor wafer by supplying a chemical solution to a surface of the semiconductor wafer while rotating the semiconductor wafer. The method is characterized in that, before supplying the chemical solution, pure water is supplied to the center of the surface of the semiconductor wafer while rotating the semiconductor wafer, and a film of pure water is formed on the surface, and then the supply of pure water is switched to the supply of the chemical solution.

[0016] As mentioned above, when semiconductor wafers are cleaned using a single-wafer cleaning method, turbulence in the chemical solution occurs due to the hydraulic jump, which can prevent uniform cleaning of the semiconductor wafer surface. When the surface of a semiconductor wafer with turbulent chemical solution is inspected using a surface inspection system (e.g., KLA-Tencor's Surfscan SP5 or later), a spiral-shaped pattern of light point defects (LPDs) reflecting the turbulence is detected. Furthermore, since the semiconductor wafer surface cannot be cleaned uniformly, the number of detected LPDs increases.

[0017] In order to solve the above problems, the inventors performed cleaning of semiconductor wafers under various conditions and conducted a detailed investigation into the relationship between the behavior of the chemical solution supplied to the wafer surface and the LPD patterns detected on the surface of the semiconductor wafer after cleaning. As a result, they discovered that in order to uniformly clean the surface of the semiconductor wafer, it is extremely important to suppress turbulence in the chemical solution at the initial stage of cleaning, i.e., immediately after starting to supply the chemical solution to the surface of the semiconductor wafer in a dry state.

[0018] The hydraulic jump phenomenon, which is the cause of the turbulence of the above-mentioned chemical solution, is more likely to occur as the rotation speed of the semiconductor wafer increases. Therefore, the inventors attempted to clean semiconductor wafers while rotating the semiconductor wafers at a rotation speed lower than that of conventional methods. As a result, they found that the chemical solutions used for cleaning (ozone water, hydrofluoric acid solution, SC-1 cleaning solution, ammonia hydrogen peroxide mixture, etc.) are highly reactive with semiconductor wafers, so defects are formed in the areas where the chemical solution lands. In addition, the chemical solution does not spread uniformly on the wafer surface, resulting in uneven thickness of the oxide film formed and uneven etching, and the semiconductor wafers could not be cleaned uniformly.

[0019] Therefore, the inventors came up with the idea of ​​supplying pure water, which has a lower reactivity than the chemical solution, to the surface of the semiconductor wafer before supplying the chemical solution.The inventors then discovered that by switching from supplying pure water to supplying the chemical solution while a film of pure water has been formed on the surface of the semiconductor wafer, the chemical solution is diluted by the pure water present on the wafer surface and its reactivity is reduced, thereby suppressing the turbulence of the high-concentration chemical solution immediately after the start of chemical solution supply, and supplying the chemical solution of a uniform concentration to the entire surface of the semiconductor wafer, thereby enabling the surface of the semiconductor wafer to be cleaned more uniformly than before, and thus completed the present invention.

[0020] As is clear from the above description, the present invention is characterized in that the supply of pure water is switched to the supply of chemical solution after the pure water is supplied to the surface of the semiconductor wafer to form a film of pure water, and the other steps can be appropriately performed by conventionally known methods and are not limited thereto. Each step will be described below.

[0021] <Pure water supply process> First, while rotating the semiconductor wafer to be cleaned, pure water is supplied to the center of the surface of the semiconductor wafer, forming a film of pure water on the surface of the semiconductor wafer (pure water supplying step).

[0022] The semiconductor wafer to be cleaned can be any semiconductor wafer, such as a silicon wafer, a germanium wafer, or a gallium arsenide wafer. However, the present invention is particularly suitable for cleaning silicon wafers. The semiconductor wafer can be a single crystal wafer or a polycrystalline wafer. Furthermore, the semiconductor wafer can be an epitaxial wafer or an annealed wafer. The diameter, conductivity type, resistivity, and other characteristics of the semiconductor wafer are not limited.

[0023] The rotation of the semiconductor wafer can be achieved by placing the semiconductor wafer on a turntable of a typical single-wafer semiconductor wafer cleaning device and rotating the turntable. The rotation speed of the semiconductor wafer can be adjusted by controlling the rotation speed of the turntable.

[0024] The pure water is supplied toward the center of the semiconductor wafer to be cleaned. By supplying the pure water to the center of the rotating semiconductor wafer, centrifugal force causes the pure water to spread evenly from the center to the periphery of the semiconductor wafer, forming a film of pure water on the surface of the semiconductor wafer.

[0025] The supply of the pure water can be carried out by discharging the pure water onto the surface of the semiconductor wafer W from a pure water supply nozzle 1 disposed above the center of the semiconductor wafer W, as shown schematically in FIG. 1(a).

[0026] The supply of pure water is continued at least until a film of pure water is formed over the entire surface of the semiconductor wafer W. The time required for the film of pure water to be formed depends on the diameter of the semiconductor wafer W, the flow rate of pure water, and the rotation speed of the semiconductor wafer W, but for example, if the semiconductor wafer W is a silicon wafer with a diameter of 300 mm, the flow rate of pure water is approximately 0.5 L / min, and the rotation speed of the silicon wafer is 25 rpm, it takes about 5 seconds. In the present invention, pure water continues to be supplied to the surface of the semiconductor wafer W until the supply of chemical liquid is switched to in the subsequent chemical liquid supply step.

[0027] The purity of the pure water supplied to the surface of the semiconductor wafer W is not particularly limited as long as it has a purity sufficient to achieve product quality. The purity of the pure water can be at the so-called pure water level (e.g., resistivity: 0.1 to 15 MΩ cm) or at the ultrapure water level (e.g., resistivity: over 15 MΩ cm).

[0028] The supply of the pure water is preferably carried out while the semiconductor wafer W is being rotated at a rotational speed of 100 rpm or less. This prevents the generation of turbulent flow of the pure water due to the hydraulic jump phenomenon, and even when the chemical solution is supplied in the subsequent chemical solution supplying step, this prevents the generation of turbulent flow of the chemical solution, thereby enabling the surface of the semiconductor wafer W to be more uniformly cleaned. Furthermore, the supply of pure water is preferably carried out while the semiconductor wafer W is being rotated at a rotational speed of 10 rpm or more, and more preferably while the semiconductor wafer W is being rotated at a rotational speed of 25 rpm or more. This allows a film of pure water to be formed uniformly and efficiently on the surface of the semiconductor wafer W.

[0029] Furthermore, it is preferable that the pure water be supplied at a flow rate of 1.0 L / min or less. This prevents the pure water from splashing and sliding when it hits the wafer surface, and a film of pure water is gradually formed from the center to the periphery of the semiconductor wafer W, preventing turbulence in the pure water. As a result, even when the chemical solution is supplied in the subsequent chemical solution supplying step, turbulence in the chemical solution is prevented, allowing the surface of the semiconductor wafer W to be cleaned more uniformly. It is also preferable that the pure water be supplied at a flow rate of 0.3 L / min or more. This allows a film of pure water to be efficiently formed on the surface of the semiconductor wafer W.

[0030] Furthermore, it is preferable to supply pure water at an angle of 5° or less with respect to the direction perpendicular to the surface of the semiconductor wafer W (hereinafter also referred to as the "pure water supply angle"). This prevents the pure water that has landed on the surface of the semiconductor wafer W from slipping on the wafer surface and breaking into droplets, thereby more uniformly cleaning the surface of the semiconductor wafer W. This effect can also be obtained when pure water is supplied at an angle of 0° with respect to the direction perpendicular to the surface of the semiconductor wafer W, i.e., when pure water is supplied from a direction perpendicular to the surface of the semiconductor wafer W.

[0031] <Chemical solution supply process> Next, in a state where a film of pure water has been formed in the pure water supplying step, the supply of pure water is switched to the supply of a chemical solution, and the chemical solution is supplied to the surface of the semiconductor wafer (chemical solution supplying step). This chemical solution supplying step can be performed in the same manner as the cleaning step using a chemical solution that is performed in the conventional cleaning method.

[0032] The chemical liquid may be ozone water, a hydrofluoric acid solution, an SC-1 cleaning solution, an ammonia hydrogen peroxide solution, or any other suitable chemical liquid depending on the purpose.

[0033] The chemical liquid supplying step can be composed of, for example, an ozone water supplying step (FIG. 1(b)) in which ozone water is supplied as the chemical liquid, and a hydrofluoric acid aqueous solution supplying step (FIG. 1(c)) in which an HF aqueous solution is supplied as the chemical liquid. As shown schematically in FIG. 1(b), in the ozone water supplying step, ozone water is supplied from an ozone water supply nozzle 2 onto the surface of the semiconductor wafer W, and metals and organic substances adhering to the wafer surface are oxidized and removed, and an oxide film is formed below particles adhering to the wafer surface.

[0034] As shown in FIG. 1(c), in the hydrofluoric acid solution supplying step, a hydrofluoric acid solution is supplied from a hydrofluoric acid solution supplying nozzle 3 onto the surface of the semiconductor wafer W, thereby removing the oxide film formed in the ozone water supplying step and removing particles adhering to the wafer surface.

[0035] The chemical liquid supplying step can be configured to repeat the ozone water supplying step and the hydrofluoric acid aqueous solution supplying step a predetermined number of times, and finally to perform the ozone water supplying step again.

[0036] The chemical solution is preferably supplied at a flow rate of 0.5 L / min to 1.5 L / min, more preferably 0.8 L / min to 1.3 L / min, which allows the surface of the semiconductor wafer W to be cleaned satisfactorily.

[0037] Furthermore, the supply of the chemical solution is preferably carried out while the semiconductor wafer W is being rotated at a rotation speed of 100 rpm or more and 500 rpm or less, and more preferably at a rotation speed of 100 rpm or more and 300 rpm or less. By setting the rotation speed of the semiconductor wafer W within the above range, the chemical solution can be supplied more uniformly onto the semiconductor wafer W, and the surface of the semiconductor wafer W can be cleaned more uniformly.

[0038] In addition, if the rotation speed of the semiconductor wafer W in the chemical liquid supply process is higher than the rotation speed of the semiconductor wafer W in the pure water supply process, it is preferable to increase the rotation speed of the semiconductor wafer W after switching from the supply of pure water to the supply of chemical liquid and after the pure water on the semiconductor wafer W has been completely replaced with the chemical liquid.

[0039] <Rinse process> Subsequently, pure water is supplied to the surface of the semiconductor wafer W that has been subjected to the chemical solution supply, thereby rinsing the surface of the semiconductor wafer W. This can be performed by supplying pure water to the surface of the semiconductor wafer W from the pure water supply nozzle 1 that was used in the pure water supply step. The flow rate of the pure water in the rinsing step can be, for example, 0.3 L / min or more and 1.5 L / min or less. The rotation speed of the semiconductor wafer W can be, for example, 100 rpm or more and 500 rpm or less.

[0040] <Drying process> Finally, the semiconductor wafer W that has been subjected to the rinsing step is rotated at high speed to dry the semiconductor wafer W. The rotation speed of the semiconductor wafer W in the drying step can be, for example, 1000 rpm or more and 2000 rpm or less.

[0041] In this way, the surface of the semiconductor wafer W can be cleaned more uniformly than before.

[0042] (Method for manufacturing semiconductor wafers) The method for producing a semiconductor wafer according to the present invention is characterized in that a semiconductor wafer obtained by subjecting a semiconductor ingot to wafer processing is subjected to cleaning of the surface of the semiconductor wafer by the above-described method for cleaning a semiconductor wafer according to the present invention.

[0043] As described above, in the method for cleaning a semiconductor wafer W according to the present invention, before supplying a chemical solution, pure water is supplied to the surface of the semiconductor wafer W to form a film of pure water, and then the supply of pure water is switched to the supply of a chemical solution. This allows the surface of the semiconductor wafer W to be cleaned more uniformly than in the past. By applying such a cleaning method for a semiconductor wafer W according to the present invention to a wafer manufacturing process, it is possible to manufacture semiconductor wafers W with fewer adhesive particles and fewer defects.

[0044] The semiconductor ingot can be any semiconductor ingot, such as silicon, germanium, or gallium arsenide, but the present invention is particularly suitable for cleaning silicon ingots. The semiconductor ingot can be a single crystal ingot or a polycrystalline ingot. The diameter, conductivity type, resistivity, and other characteristics of the semiconductor ingot are not limited.

[0045] The wafer processing can be appropriately configured by one or more of conventionally known processes such as slicing, chamfering, lapping, surface grinding, and double-sided grinding.

[0046] An epitaxial layer may be formed on the surface of the semiconductor wafer W obtained by the above wafer processing to form an epitaxial wafer, or the semiconductor wafer W may be subjected to an annealing process to form an annealed wafer.

[0047] The surface of the semiconductor wafer W thus obtained is cleaned by the method for cleaning a semiconductor wafer W according to the present invention described above, thereby manufacturing a semiconductor wafer W with fewer adhesive particles and defects. [Example]

[0048] Examples of the present invention will be described below, but the present invention is not limited to these examples.

[0049] <Relationship between the supply of pure water and the number of LPDs> (Conventional example) Ten silicon wafers (diameter: 300 mm) were prepared as semiconductor wafers to be cleaned, and each silicon wafer was cleaned as follows: First, while rotating the silicon wafer at a rotation speed of 500 rpm, 20 mg / L ozone water was supplied to the surface of the silicon wafer at a flow rate of 1.5 L / min at an angle of 70° relative to the direction perpendicular to the surface of the silicon wafer for 10 seconds. Next, with the silicon wafer rotation speed maintained at 500 rpm, a 1 wt% aqueous solution of hydrofluoric acid was supplied to the surface of the silicon wafer at a flow rate of 1.0 L / min at an angle of 0 to 5° relative to the direction perpendicular to the surface of the silicon wafer for 5 seconds. Subsequently, 20 mg / L of ozone water was supplied under the same conditions as before. The supply of the hydrofluoric acid solution and the ozone water was repeated several times. Thereafter, while maintaining the rotation speed of the silicon wafer at 500 rpm, pure water was supplied to the surface of the silicon wafer at a flow rate of 1.0 L / min at an angle of 0 to 5° relative to the direction perpendicular to the surface of the silicon wafer for 30 seconds to rinse the surface of the silicon wafer. Finally, the rotation speed of the silicon wafer was increased to 1000 rpm and maintained for 60 seconds to dry the silicon wafer, thus cleaning the silicon wafer.

[0050] (Example 1) Silicon wafers were cleaned in the same manner as in the conventional example. However, before the first cleaning using ozone water, pure water was supplied to the silicon wafer surface at a flow rate of 1.0 L / min for 5 seconds in a direction perpendicular to the surface while the silicon wafer was rotated at a rotation speed of 100 rpm. All other conditions were the same as in the conventional example.

[0051] The surfaces of the 10 cleaned silicon wafers for Conventional Example and Invention Example 1 were inspected using a surface inspection device (Surfscan SP7, manufactured by KLA-Tencor Corporation). At this time, oblique incident light (incident from a direction of 70 degrees relative to the vertical direction of the wafer surface) was used as the incident light to the silicon wafer surface, and the DCO channel was used as the detection channel to detect LPDs with a size of 15 nm or more.

[0052] 2 shows the number of LPDs detected for the conventional example and invention example 1. For the conventional example, the number of LPDs detected was 39.4 per silicon wafer. In contrast, for invention example 1, the number of LPDs detected was 4.9 per silicon wafer, which was fewer than for the conventional example. Furthermore, for the conventional example, the variation in the number of LPDs between silicon wafers was large, whereas for invention example 1, the variation between silicon wafers was small.

[0053] <Relationship between silicon wafer rotation speed and number of LPDs> (Example 2) Silicon wafers were cleaned in the same manner as in Example 1. However, the rotation speed of the silicon wafer when pure water was supplied was set to 50 rpm. All other conditions were the same as in Example 1.

[0054] (Comparative Example) Silicon wafers were cleaned in the same manner as in Example 1. However, the rotation speed of the silicon wafer when pure water was supplied was set to 300 rpm. All other conditions were the same as in Example 1.

[0055] As with the conventional example and invention example 1, the surfaces of the 10 cleaned silicon wafers were inspected for invention example 2 and the comparative example. The results showed 4.2 LPDs per silicon wafer for invention example 2, while the comparative example had 85.7 LPDs. As mentioned above, the number of LPDs per silicon wafer for invention example 1 was 4.9, demonstrating that the number of LPDs can be significantly reduced by setting the silicon wafer rotation speed to 100 rpm or less. Furthermore, a spiral-shaped LPD pattern, which is thought to be due to turbulence in the chemical solution, was observed in the comparative example.

[0056] <Relationship between pure water flow rate and number of LPDs> (Example 3) Silicon wafers were cleaned in the same manner as in Example 1. However, the flow rate of the pure water when it was supplied was set to 0.5 L / min. All other conditions were the same as in Example 1.

[0057] (Example 4) Silicon wafers were cleaned in the same manner as in Example 1. However, the flow rate of the pure water was set to 1.5 L / min. All other conditions were the same as in Example 1.

[0058] As with the conventional example and invention example 1, the surfaces of the 10 cleaned silicon wafers were inspected for invention example 3 and invention example 4. As a result, the number of LPDs per silicon wafer was 5.2 for invention example 3, while the number was 19.2 for invention example 4. As mentioned above, the number of LPDs per silicon wafer was 4.9 for invention example 1, which shows that the number of LPDs can be significantly reduced by setting the flow rate of pure water to 1.0 L / min or less.

[0059] <Relationship between pure water supply angle and number of LPDs> (Example 5) Silicon wafers were cleaned in the same manner as in Example 1. However, the pure water was supplied at an angle of 3° with respect to the direction perpendicular to the surface of the silicon wafer. In addition, the number of silicon wafers cleaned was three. All other conditions were the same as in Example 1.

[0060] (Example 6) Silicon wafers were cleaned in the same manner as in Example 5. However, pure water was supplied at an angle of 5° with respect to the direction perpendicular to the surface of the silicon wafer. All other conditions were the same as in Example 5.

[0061] (Example 7) Silicon wafers were cleaned in the same manner as in Example 5. However, pure water was supplied at an angle of 8° with respect to the direction perpendicular to the surface of the silicon wafer. All other conditions were the same as in Example 5.

[0062] (Example 8) Silicon wafers were cleaned in the same manner as in Example 5. However, pure water was supplied at an angle of 10° relative to the direction perpendicular to the surface of the silicon wafer. All other conditions were the same as in Example 5.

[0063] (Example 9) Silicon wafers were cleaned in the same manner as in Example 5. However, pure water was supplied at an angle of 20° with respect to the direction perpendicular to the surface of the silicon wafer. All other conditions were the same as in Example 5.

[0064] As in the conventional example and invention example 1, for invention examples 5 to 9, the surfaces of the three cleaned silicon wafers were inspected using a surface inspection device (SP-7, manufactured by KLA-Tencor).

[0065] Figure 3 shows the relationship between the pure water supply angle relative to the vertical direction of the wafer and the number of LPDs. Note that the results for an angle of 0° are shown for three wafers selected from the ten silicon wafers cleaned in Example 1. As is clear from Figure 3, the number of LPDs increases as the pure water supply angle relative to the vertical direction of the silicon wafer increases. However, when the pure water supply angle is 5° or less, the number of LPDs per silicon wafer is five or less, indicating that the surfaces of the silicon wafers are cleaned to a high level. [Industrial Applicability]

[0066] According to the present invention, the surface of a semiconductor wafer can be cleaned more uniformly than before, and is therefore useful in the semiconductor wafer manufacturing industry. [Explanation of symbols]

[0067] 1 Pure water supply nozzle 2 Ozone water supply nozzles 3 Hydrofluoric acid solution supply nozzle W Semiconductor wafer

Claims

1. A method for cleaning a semiconductor wafer in a wafer manufacturing process, which comprises supplying a chemical solution to a surface of the semiconductor wafer while rotating the semiconductor wafer to clean the surface, before the supply of the chemical solution, pure water is supplied to the center of the surface of the semiconductor wafer while rotating the semiconductor wafer, and in a state where a film of the pure water is formed on the surface, the supply of the pure water is switched to the supply of the chemical solution; The method for cleaning a semiconductor wafer, wherein the supply of pure water is carried out at an angle of 5° or less with respect to a direction perpendicular to the surface of the semiconductor wafer, while the semiconductor wafer is rotated at a rotation speed of 100 rpm or less, at a flow rate of 1.0 L / min or less.

2. 2. The method for cleaning a semiconductor wafer according to claim 1, wherein the semiconductor wafer is a silicon wafer.

3. 3. A method for producing a semiconductor wafer, comprising the steps of: subjecting a semiconductor ingot to wafer processing to obtain a semiconductor wafer; and cleaning the surface of the semiconductor wafer by the method for cleaning a semiconductor wafer according to claim 1 or 2.

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