Method for integrating workpiece and sheet material, device for integrating workpiece and sheet material, and method for manufacturing semiconductor products

Abstract

To provide an integration method for a work and a sheet material capable of further improving adhesion of the sheet material and the work while further surely avoiding occurrence of damage in the work when manufacturing a semiconductor product by adhering and integrating the sheet material to the work, an integration device for the work and the sheet material, and a manufacturing method of the semiconductor product.SOLUTION: An integration method for a work and a sheet material includes: an upper / lower space forming step of dividing a chamber 29 into a lower space H1 and an upper space H2 with an adhesive tape DT interposed therebetween; a first integrating step of reducing a pressure inside of the chamber 29 and adhering the adhesive tape DT to a wafer W with a differential pressure formed between the lower space H1 and the upper space H2; a pressure difference adjusting step of adjusting a pressure difference between the lower space H1 and the upper space H2; and a second integration step of adhering the adhesive tape DT to the wafer W by increasing the pressure in an internal space of the chamber 29 equal to or higher than an atmospheric pressure in a state where the pressure difference is adjusted.SELECTED DRAWING: Figure 21

Description

[Technical Field]

[0001] The present invention relates to a method for integrating a workpiece and a sheet material, for example, a semiconductor wafer (hereinafter referred to as "wafer" as appropriate) or a substrate on which semiconductor chips or electronic components are mounted, by attaching and integrating a sheet material, for example, a tape-like adhesive material, to the workpiece and the sheet material, which are used to manufacture semiconductor products; an apparatus for integrating the workpiece and the sheet material; and a method for manufacturing semiconductor products. [Background technology]

[0002] After a circuit pattern is formed on the surface of the wafer, the back surface of the wafer is ground in a back-grinding process, and the wafer is then divided into a large number of chip components in a dicing process. In the back grinding process, only the central portion of the wafer is ground, leaving the outer periphery of the back surface, and an annular convex portion is sometimes formed on the outer periphery of the back surface of the wafer so as to surround the back grind area.

[0003] In this case, even if the central portion of the wafer is thinned, the annular convex portion reinforces the wafer, preventing distortion during handling. After the backgrinding process, the wafer with the annular convex portion is placed in the center of a ring frame, and a supporting adhesive tape (dicing tape) is attached to the ring frame and the back surface of the wafer. The dicing tape is attached to integrate the wafer and the dicing tape, creating a mount frame, which is then sent to the dicing process.

[0004] The following method has been proposed as an example of a method for attaching an adhesive sheet, such as dicing tape, to a wafer having a step formed by an annular convex portion. Specifically, the adhesive sheet is sandwiched between the joint of a chamber consisting of a pair of upper and lower housings. The chamber is then depressurized to generate a pressure difference between the two spaces separated by the adhesive sheet, and the adhesive tape is bent in a concave shape to attach the adhesive sheet to the backside of the wafer. After the pressure difference in the chamber is eliminated, a second attachment process is performed by supplying gas from a first pressing member to any adhesive sheet that has not been fully adhered and is floating up at the inner corner of the annular convex portion (see Patent Document 1).

[0005] Attempts have also been made to convert the process of applying pressure-sensitive adhesive sheets into a device encapsulation process. That is, in the manufacturing process of electronic products, such as BGA (Ball Grid Array) packages, a process is carried out in which a device, such as a semiconductor chip, mounted on the surface of a workpiece, such as a wafer or substrate, is encapsulated and packaged with an encapsulating material such as a resin composition.

[0006] Conventionally, a method has been used in which a liquid resin is poured into a mold in which a workpiece on which a device is mounted is placed, and then the resin is thermally cured to seal the device (see, for example, Patent Document 2).In contrast to this, the present applicant has separately proposed a method in which a workpiece is placed inside a chamber formed by sandwiching an adhesive sheet-like device encapsulant between a pair of upper and lower housings, and a pressure difference is generated inside the chamber to seal the device on the workpiece with the adhesive sheet of the device encapsulant, thereby integrating the two.

[0007] [Patent Document 1] Japanese Patent Application Laid-Open No. 2013-232582 [Patent Document 2] Japanese Patent Application Publication No. 2017-087551 DISCLOSURE OF THE INVENTION [Problem to be solved by the invention]

[0008] However, the above-mentioned conventional methods have the following problems. That is, with the conventional methods, as time passes after a sheet material, such as an adhesive sheet or a sheet-like sealing material, is attached to a workpiece, the adhesion decreases, and there is a risk that the sheet material may peel off from the workpiece. In addition, a new problem arises in that damage such as cracks, chips, or distortion may occur in the workpiece when the sheet material is attached to the workpiece.

[0009] The present invention has been made in consideration of the above circumstances, and its main object is to provide a method for integrating a workpiece with a sheet material, an apparatus for integrating a workpiece with a sheet material, and a method for manufacturing semiconductor products, which can more reliably avoid damage to the workpiece when attaching and integrating a sheet material to the workpiece to manufacture a semiconductor product, while further improving the adhesion between the sheet material and the workpiece. [Means for solving the problem]

[0010] In order to achieve the above object, the present invention has the following configuration. That is, the present invention is a method for integrating a workpiece and a sheet material in an internal space of a chamber having an upper chamber and a lower chamber, the method comprising: a step of forming upper and lower spaces by sandwiching the sheet material between the upper chamber and the lower chamber to divide the internal space of the chamber into a lower space in which the workpiece is placed and an upper space facing the lower space with the sheet material interposed therebetween; a first integration process in which the pressure inside the chamber is reduced so that the pressure in the lower space is lower than the pressure in the upper space, and the sheet material is brought into contact with the workpiece by the pressure difference formed between the upper space and the lower space in the chamber, thereby adhering the sheet material to the workpiece; a pressure difference adjusting step of adjusting a pressure difference between the upper space and the lower space in the chamber after the first integration step; The pressure difference is adjusted While maintaining the statea second integration process in which the pressure in the internal space of the chamber is increased to a pressure equal to or higher than atmospheric pressure to adhere the sheet material to the workpiece; The present invention is characterized by the following features.

[0011] (Operation and Effect) According to this configuration, after the inner space of the chamber is divided into a lower space and an upper space by the sheet material in the upper and lower space forming process, the sheet material is brought into contact with the workpiece in the first integration process. In the first integration process, the pressure inside the chamber is reduced, so that when the sheet material is brought into contact with the workpiece, air bubbles can be prevented from being trapped between the sheet material and the workpiece by using the differential pressure formed between the upper and lower spaces.

[0012] In addition, in the second integration process, the pressure inside the chamber is raised above atmospheric pressure, which applies a strong pressure between the workpiece and the sheet material that is in contact with it. As a result, the adhesion between the sheet material and the workpiece is greatly improved, preventing the sheet material from peeling off from the workpiece even after a long time has passed since it was attached to the workpiece.

[0013] Then, a pressure difference adjustment process is performed before the second integration process, adjusting the pressure difference between the upper space and the lower space to be equal to or less than a predetermined value. By performing the pressure difference adjustment process, the pressure in the internal space of the chamber is increased to a pressure above atmospheric pressure during the second integration process, while the pressure difference between the upper space and the lower space is adjusted to be equal to or less than a predetermined value. This prevents a situation in which a large pressure difference occurs between the upper space and the lower space when the internal space of the chamber is pressurized above atmospheric pressure, causing damage to the workpiece, such as cracks, chips, or distortions. Therefore, in the process of integrating the workpiece and the sheet material, damage to the workpiece can be avoided while increasing the adhesion between the workpiece and the sheet material.

[0014] In the above-described invention, it is preferable that the pressure difference adjusting step includes forming a through hole in the sheet material, thereby communicating the upper space with the lower space via the through hole.

[0015] (Actions and Effects) According to this configuration, through holes are formed in the sheet material during the pressure difference adjustment process. That is, the pressure difference adjustment process connects the upper space and the lower space via the through holes. Therefore, even if an imbalance occurs between the air pressures of the upper space and the lower space, the imbalance is quickly eliminated by the flow of gas between the upper space and the lower space via the through holes. During the second integration process, the internal space of the chamber is pressurized above atmospheric pressure with the through holes formed. Therefore, the internal space of the chamber can be pressurized above atmospheric pressure while more reliably suppressing the pressure difference between the upper space and the lower space to a predetermined value or less.

[0016] In the above-described invention, it is preferable that the pressure difference adjusting step maintains the pressure difference by controlling the pressure in at least one of the upper space and the lower space to increase in stages.

[0017] (Actions and Effects) According to this configuration, by performing the pressure difference adjustment process, the pressure in at least one of the upper space and the lower space is controlled to increase in stages during the second integration process, while the internal space of the chamber is pressurized to atmospheric pressure or higher. By increasing the pressure in at least one of the upper space and the lower space in stages, the pressure difference between the upper space and the lower space can be prevented from exceeding a predetermined value. Therefore, the internal space of the chamber can be pressurized to atmospheric pressure or higher while more reliably suppressing the pressure difference between the upper space and the lower space to a predetermined value or lower.

[0018] Furthermore, in the above-described invention, it is preferable that the chamber comprises a first pressure change mechanism that adjusts the pressure in the upper space, a second pressure change mechanism that adjusts the pressure in the lower space, and a control unit that independently controls the first pressure change mechanism and the second pressure change mechanism, and that the pressure difference adjustment process increases the pressure in the upper space and the lower space while maintaining the pressure difference by the control unit independently controlling the first pressure change mechanism and the second pressure change mechanism.

[0019] (Actions and Effects) This configuration includes a first pressure change mechanism that adjusts the pressure in the upper space and a second pressure change mechanism that adjusts the pressure in the lower space. The control unit independently controls the first pressure change mechanism and the second pressure change mechanism, thereby independently adjusting the pressure in the upper space and the pressure in the lower space. Therefore, by independently controlling the first pressure change mechanism and the second pressure change mechanism during the pressure difference adjustment process, the internal space of the chamber can be pressurized to atmospheric pressure or higher while more reliably suppressing the pressure difference between the upper space and the lower space to a predetermined value or less during the second integration process.

[0020] In the above-described invention, it is preferable that in the first integration step, the sheet material is brought into contact with the workpiece by deforming the sheet material into a convex shape toward the workpiece.

[0021] (Operation and Effect) With this configuration, the sheet material is deformed into a convex shape toward the workpiece, so that the sheet material can be brought into contact with the workpiece so that it spreads radially from a single point. This makes it possible to avoid air bubbles being trapped when the sheet material is brought into contact with the workpiece.

[0022] In the above-described invention, it is preferable that the sheet material has a predetermined shape corresponding to the workpiece.

[0023] (Operation and Effect) According to this configuration, the sheet material has a predetermined shape corresponding to the workpiece in advance. Therefore, the sheet material can be brought into contact with the workpiece appropriately according to the shape of the workpiece. Furthermore, since a process such as cutting the sheet material into an appropriate predetermined shape is not required, the process of integrating the sheet material and the workpiece can be shortened.

[0024] In the above-mentioned invention, the sheet material is held by a long conveying sheet, Upper Chamber and a sheet-like elastic body disposed inside the upper and lower spaces. Upper Chamber and the above Lower ChamberIt is preferable that the sheet-like elastic body be arranged so that by sandwiching the conveying sheet between the sheet-like elastic body and the sheet-like elastic body abuts against the surface of the conveying sheet that does not hold the sheet material.

[0025] (Actions and Effects) According to this configuration, during the first integration process, the sheet-like elastic body is deformed into a convex shape with a more uniform curvature throughout due to the differential pressure formed between the upper and lower spaces. This allows the sheet material to more easily deform according to the shape of the workpiece's surface, further improving the adhesion of the sheet material to the workpiece. This more reliably prevents the sheet material integrated with the workpiece from peeling off from the workpiece over time.

[0026] In addition, in the above-mentioned invention, it is preferable that the workpiece has an annular convex portion on the outer periphery of one surface, and the sheet material is closely attached to the surface of the workpiece on which the annular convex portion is formed.

[0027] (Action and Effect) According to this configuration, the workpiece and the sheet material are integrated by adhering the sheet material to the surface of the workpiece having an annular convex portion on the outer periphery of one side where the annular convex portion is formed. Generally, when integrating a sheet material with a workpiece having an annular convex portion, the inner corners of the annular convex portion are prone to damage because pressure tends to concentrate on the inner corners, and the sheet material is also prone to peeling off from the inner corners of the annular convex portion.

[0028] In the present invention, the first integration process, the pressure difference adjustment process, and the second integration process are performed, thereby increasing the adhesion between the workpiece and the sheet material while avoiding damage to the workpiece. Therefore, even when integrating a sheet material with a workpiece having an annular convex portion on its outer periphery, both damage to the workpiece and peeling of the sheet material from the workpiece can be prevented. Therefore, the sheet material can be more suitably integrated with a workpiece having an annular convex portion on the outer periphery of one side.

[0029] In the above-described invention, it is preferable that the workpiece is a substrate on which an optical element is mounted, and the sheet material is brought into close contact with the surface of the workpiece on which the optical element is mounted.

[0030] (Actions and Effects) According to this configuration, the workpiece and the sheet material are integrated by closely adhering the sheet material to the optical element mounting surface of the substrate on which the optical element is mounted. In the present invention, the first integration process, the pressure difference adjustment process, and the second integration process are performed, so that the adhesion between the workpiece and the sheet material can be improved while avoiding damage to the workpiece. Therefore, the sheet material can be more suitably integrated with the substrate on which the optical element is mounted.

[0031] In order to achieve the above object, the present invention may have the following configuration. That is, the present invention is an apparatus for integrating a workpiece and a sheet material in an internal space of a chamber having an upper chamber and a lower chamber, the apparatus comprising: a holding table for holding the workpiece; a chamber that houses the holding table and is formed by sandwiching the sheet material between the upper chamber and the lower chamber, and is partitioned into an upper space and a lower space via the sheet material; a supply mechanism for supplying the sheet material; a first integration mechanism that reduces the pressure inside the chamber so that the pressure in the lower space is lower than the pressure in the upper space, and adheres the sheet material to the workpiece by contacting the sheet-shaped sealing material with the workpiece using a pressure difference formed between the upper space and the lower space in the chamber; a differential pressure adjustment mechanism that adjusts the pressure difference between the upper space and the lower space in the chamber after the sheet material has adhered to the workpiece; The pressure difference is adjusted While maintaining the state a second integration mechanism that brings the sheet material into close contact with the workpiece by increasing the pressure in the internal space of the chamber to a pressure equal to or higher than atmospheric pressure; The present invention is characterized by the following features.

[0032] (Operation and Effect) According to this configuration, in a chamber partitioned into a lower space and an upper space by the sheet material, the first integration mechanism brings the sheet material into contact with the workpiece. At this time, the pressure inside the chamber is reduced, so that when the sheet material is brought into contact with the workpiece using the differential pressure formed between the upper space and the lower space, it is possible to prevent air bubbles from being trapped between the sheet material and the workpiece.

[0033] In addition, the second integration mechanism increases the pressure in the chamber's internal space to above atmospheric pressure, integrating the sheet material and the workpiece, so a strong pressing force acts between the sheet material that comes into contact with the workpiece. As a result, the adhesion between the sheet material and the workpiece is greatly improved, preventing the sheet material from peeling off from the workpiece even after a long time has passed since it was attached to the workpiece.

[0034] The differential pressure adjustment mechanism then adjusts the pressure difference between the upper space and the lower space to a predetermined value or less. That is, by pre-activating the differential pressure adjustment mechanism, the second integration mechanism increases the pressure in the chamber's internal space to a pressure above atmospheric pressure while the pressure difference between the upper space and the lower space is adjusted to a predetermined value or less. This prevents a large pressure difference from occurring between the upper space and the lower space due to pressurizing the chamber's internal space above atmospheric pressure, which could cause damage to the workpiece, such as cracks, chips, or distortion. Therefore, during the process of integrating the workpiece and the sheet material, the adhesion between the workpiece and the sheet material can be improved while avoiding damage to the workpiece.

[0035] In order to achieve the above object, the present invention may have the following configuration. That is, the present invention is a method for manufacturing a semiconductor product, in which a workpiece and a sheet material are integrated in an internal space of a chamber having an upper chamber and a lower chamber, and the semiconductor product is manufactured by: a step of forming upper and lower spaces by sandwiching the sheet material between the upper chamber and the lower chamber to divide the internal space of the chamber into a lower space in which the workpiece is placed and an upper space facing the lower space with the sheet material interposed therebetween; a first integration process in which the pressure inside the chamber is reduced so that the pressure in the lower space is lower than the pressure in the upper space, and the sheet material is brought into contact with the workpiece by the pressure difference formed between the upper space and the lower space in the chamber, thereby adhering the sheet material to the workpiece; a pressure difference adjusting step of adjusting the pressure in the chamber so that the pressure difference between the upper space and the lower space in the chamber is reduced after the first integration step; The pressure difference is adjusted While maintaining the state a second integration process in which the pressure in the internal space of the chamber is increased to a pressure equal to or higher than atmospheric pressure to adhere the sheet material to the workpiece; The present invention is characterized by the following features.

[0036] (Operation and Effect) According to this configuration, after the inner space of the chamber is divided into a lower space and an upper space by the sheet material in the upper and lower space forming process, the sheet material is brought into contact with the workpiece in the first integration process. In the first integration process, the pressure inside the chamber is reduced, so that when the sheet material is brought into contact with the workpiece, air bubbles can be prevented from being trapped between the sheet material and the workpiece by using the differential pressure formed between the upper and lower spaces.

[0037] In addition, in the second integration process, the pressure inside the chamber is raised above atmospheric pressure, which applies a strong pressure between the workpiece and the sheet material that is in contact with it. As a result, the adhesion between the sheet material and the workpiece is greatly improved, preventing the sheet material from peeling off from the workpiece even after a long time has passed since it was attached to the workpiece.

[0038] A pressure difference adjustment process is performed before the second integration process, adjusting the pressure difference between the upper space and the lower space to a predetermined value or less. By performing the pressure difference adjustment process, the pressure in the internal space of the chamber is increased to a pressure above atmospheric pressure during the second integration process, while the pressure difference between the upper space and the lower space is adjusted to a predetermined value or less. This prevents a large pressure difference between the upper space and the lower space caused by pressurizing the internal space of the chamber above atmospheric pressure, which could result in damage to the workpiece, such as cracks, chips, or distortion. Therefore, in the process of integrating the workpiece and the sheet material, the adhesion between the workpiece and the sheet material is improved while avoiding damage to the workpiece. Therefore, when manufacturing semiconductor products in which the workpiece and the sheet material are integrated, the occurrence of defective products due to damaged workpieces can be prevented, and the quality of the manufactured semiconductor products can be further improved. [Effects of the Invention]

[0039] According to the method for integrating a workpiece with a sheet material, the device for integrating a workpiece with a sheet material, and the method for manufacturing a semiconductor product of the present invention, the internal space of a chamber is divided into a lower space and an upper space by the sheet material in the upper and lower space forming process, and then the sheet material is brought into contact with the workpiece in the first integration process. In the first integration process, the pressure inside the chamber is reduced, so that the differential pressure formed between the upper and lower spaces can be used to prevent air bubbles from being trapped between the sheet material and the workpiece when the sheet material is brought into contact with the workpiece.

[0040] In addition, in the second integration process, the pressure inside the chamber is raised above atmospheric pressure, which applies a strong pressure between the workpiece and the sheet material that is in contact with it. As a result, the adhesion between the sheet material and the workpiece is greatly improved, preventing the sheet material from peeling off from the workpiece even after a long time has passed since it was attached to the workpiece.

[0041] A pressure difference adjusting process for adjusting the pressure difference between the upper space and the lower space is performed before the second integration process. By performing the pressure difference adjusting process, the pressure in the internal space of the chamber can be increased to a pressure above atmospheric pressure in the second integration process while the pressure difference between the upper space and the lower space is adjusted.

[0042] Therefore, it is possible to avoid a situation in which a large pressure difference occurs between the upper space and the lower space when the internal space of the chamber is pressurized to a pressure equal to or higher than atmospheric pressure, and damage to the workpiece, such as cracks, chips, or distortions, occurs due to the pressure difference. Therefore, in the process of integrating the workpiece and the sheet material, it is possible to avoid damage to the workpiece while improving the adhesion between the workpiece and the sheet material. Therefore, it is possible to prevent the occurrence of defective products due to damaged workpieces when manufacturing semiconductor products in which the workpiece and the sheet material are integrated, and to further improve the quality of the manufactured semiconductor products. [Brief explanation of the drawings]

[0043] [Figure 1] 1A and 1B are diagrams illustrating a configuration of a semiconductor wafer according to Example 1. (a) is a partially cutaway perspective view of the semiconductor wafer, (b) is a perspective view of the back surface side of the semiconductor wafer, and (c) is a partial vertical cross-sectional view of the semiconductor wafer. [Figure 2] 1 is a cross-sectional view showing the structure of a pressure-sensitive adhesive sheet according to Example 1. FIG. [Figure 3] 1 is a plan view of an adhesive sheet joining device according to a first embodiment. [Figure 4] 1 is a front view of an adhesive sheet joining device according to a first embodiment. [Figure 5] FIG. 2 is a front view of the joining unit according to the first embodiment. [Figure 6] FIG. 2 is a vertical cross-sectional view of a chamber according to the first embodiment. [Figure 7] FIG. 2 is a perspective view of a sheet punching unit according to the first embodiment. [Figure 8] 4 is a flowchart showing the operation of the adhesive sheet joining device according to the first embodiment. [Figure 9] FIG. 2 is a perspective view of a mount frame according to the first embodiment. [Figure 10] FIG. 10 is a diagram illustrating step S2 according to the first embodiment. [Figure 11] FIG. 10 is a diagram illustrating step S3 according to the first embodiment. [Figure 12] FIG. 10 is a diagram illustrating step S3 according to the first embodiment. [Figure 13] FIG. 10 is a diagram illustrating step S4 according to the first embodiment. [Figure 14] FIG. 10 is a diagram illustrating step S4 according to the first embodiment. [Figure 15] FIG. 10 is a diagram illustrating step S4 according to the first embodiment. [Figure 16] FIG. 10 is a diagram illustrating step S5 according to the first embodiment. [Figure 17] 10 is a plan view illustrating the positions of through holes formed by the sheet punching unit moving down in step S5 according to the first embodiment. FIG. [Figure 18] FIG. 10 is a diagram illustrating step S5 according to the first embodiment. [Figure 19] 10 is a plan view illustrating the positions of through holes formed by the rotation of the sheet punching unit in step S5 according to the first embodiment. FIG. [Figure 20] FIG. 10 is a diagram illustrating step S5 according to the first embodiment. [Figure 21] FIG. 10 is a diagram illustrating step S6 according to the first embodiment. [Figure 22] FIG. 10 is a diagram illustrating step S7 according to the first embodiment. [Figure 23] FIG. 10 is a diagram illustrating step S7 according to the first embodiment. [Figure 24] FIG. 10 is a diagram illustrating step S8 according to the first embodiment. [Figure 25] FIG. 10 is a graph illustrating a pressure control pattern inside the chamber according to a comparative example. [Figure 26] FIG. 10 is a graph illustrating a pressure control pattern inside the chamber according to the second embodiment. [Figure 27] FIG. 10 is a vertical cross-sectional view of a chamber according to a third embodiment. [Figure 28]FIG. 10 is a diagram illustrating step S6 according to the third embodiment. [Figure 29] FIG. 10 is a graph illustrating a change in pressure inside a chamber according to Example 3. [Figure 30] FIG. 10 is a vertical cross-sectional view of a chamber according to a fourth embodiment. [Figure 31] 10A and 10B are diagrams showing the configuration of a sealing member according to Example 5, where (a) is a perspective view of the back surface side of the sealing member, and (b) is a vertical cross-sectional view of the sealing member. [Figure 32] FIG. 10 is a perspective view showing the configuration of a substrate and a ring frame according to a fifth embodiment. [Figure 33] FIG. 10 is a plan view of a device sealing apparatus according to a fifth embodiment. [Figure 34] FIG. 10 is a front view of a device sealing apparatus according to a fifth embodiment. [Figure 35] FIG. 10 is a front view of a sealing unit according to a fifth embodiment. [Figure 36] 10 is a flowchart showing the operation of the device sealing apparatus according to the fifth embodiment. [Figure 37] FIG. 10 is a diagram illustrating step S2 according to the fifth embodiment. [Figure 38] FIG. 10 is a diagram illustrating step S2 according to the fifth embodiment. [Figure 39] FIG. 10 is a diagram illustrating step S3 according to the fifth embodiment. [Figure 40] FIG. 10 is a diagram illustrating step S3 according to the fifth embodiment. [Figure 41] FIG. 10 is a diagram illustrating step S4 according to the fifth embodiment. [Figure 42] FIG. 10 is a diagram illustrating step S4 according to the fifth embodiment. [Figure 43] FIG. 10 is a diagram illustrating step S5 according to the fifth embodiment. [Figure 44] FIG. 10 is a diagram illustrating step S5 according to the fifth embodiment. [Figure 45] FIG. 13 is a plan view illustrating the positions of through holes formed by the rotation of the sheet punching unit in step S5 according to the fifth embodiment. [Figure 46] FIG. 10 is a diagram illustrating step S6 according to the fifth embodiment. [Figure 47] FIG. 10 is a diagram illustrating step S7 according to the fifth embodiment. [Figure 48] FIG. 10 is a diagram illustrating step S7 according to the fifth embodiment. [Figure 49] FIG. 10 is a diagram illustrating step S8 according to the fifth embodiment. [Figure 50] 10A and 10B are diagrams illustrating the effect of Example 5. (a) is a vertical cross-sectional view illustrating a configuration in which a gap is formed when the inside of a chamber is depressurized and sealed, and (b) is a vertical cross-sectional view illustrating a state in which the gap is filled by pressurizing the inside of the chamber and sealing. [Figure 51] FIG. 10 is a diagram illustrating step S4 according to a modified example. [Figure 52] 1A is a longitudinal cross-sectional view showing the configuration of a chamber according to a modified example that includes an elastic body, FIG. 1B is a diagram explaining problems that may occur in a comparative example that does not include an elastic body, and FIG. 1C is a diagram explaining advantages of the modified example that includes an elastic body. [Figure 53] 1A is a diagram illustrating a configuration of a modified example including a heating mechanism, and FIG. 1B is a diagram illustrating a configuration of a modified example in which the heating mechanism is located close to the adhesive tape. [Figure 54] 10A is a vertical cross-sectional view illustrating the configuration of a substrate according to the modified example, and FIG. 10B is a vertical cross-sectional view illustrating the configuration of a holding table according to the modified example. [Figure 55] FIG. 10 is a diagram illustrating the process of step S3 according to a modified example. [Figure 56] FIG. 10 is a diagram illustrating the process of step S2 according to a modified example. [Figure 57] FIG. 10 is a diagram illustrating the process of step S3 according to a modified example. [Figure 58] FIG. 10 is a vertical cross-sectional view of a chamber according to a second embodiment. DETAILED DESCRIPTION OF THE INVENTION [Example]

[0044] A first embodiment of the present invention will be described below with reference to the drawings. In the first embodiment, an adhesive sheet applying device 1 that applies an adhesive sheet to a workpiece will be used as an example of a configuration for integrating a workpiece and a sheet material.

[0045] In the adhesive sheet application device 1 according to the first embodiment, a supporting adhesive tape DT (dicing tape) is used as the adhesive sheet, and a semiconductor wafer W (hereinafter referred to as "wafer W") and a ring frame f are used as the workpiece to which the adhesive sheet is to be applied. That is, in the adhesive sheet application device 1 according to the first embodiment, a mount frame MF is created by applying the adhesive tape DT across the wafer W and the ring frame f. The mount frame MF is a semiconductor product in which the adhesive tape DT is integrated with the wafer W and the ring frame f. In the first embodiment, the mount frame MF corresponds to the semiconductor product in the present invention.

[0046] As shown in Figures 1(a) to 1(c), the wafer W is back-ground with a protective tape PT for protecting the circuit attached to the surface on which the circuit pattern is formed. The back surface of the wafer W is ground (back-ground) leaving approximately 3 mm of the outer periphery in the radial direction. That is, the wafer is used with a flat recess He formed on the back surface and an annular protrusion Ka remaining along the periphery. As an example, the flat recess He is ground to a depth d of several hundred μm, and the wafer thickness J of the flat recess He is 30 μm to 50 μm. Therefore, the annular protrusion Ka formed on the outer periphery of the back surface functions as an annular rib that increases the rigidity of the wafer W and prevents the wafer W from bending and deforming during handling and other processing steps. Note that the inner corner of the annular protrusion Ka is denoted by the symbol The inner corner Kf corresponds to the boundary between the annular convex portion Ka and the flat concave portion He. The back surface of the wafer W corresponds to the annular convex portion forming surface of the workpiece in the present invention.

[0047] The adhesive tape DT used in this example has a long structure in which a non-adhesive substrate Ta and an adhesive material Tb having adhesiveness are laminated, as shown in Fig. 2. A separator S is attached to the adhesive material Tb. That is, the separator S is attached to the adhesive surface of the adhesive tape DT, and the adhesive surface of the adhesive tape DT is exposed by peeling the separator S from the adhesive tape DT.

[0048] Examples of materials constituting the substrate Ta include polyolefin, polyethylene, ethylene-vinyl acetate copolymer, polyester, polyimide, polyurethane, vinyl chloride, polyethylene terephthalate, polybutylene terephthalate, polyethylene terenaphthalate, polyvinylidene chloride, polyethylene methacrylic acid copolymer, polypropylene, methacrylic acid terephthalate, polyamide-imide, and polyurethane elastomer. A combination of two or more of the above-mentioned materials may also be used for the substrate Ta. Furthermore, the substrate Ta may be a single layer, or may have a structure in which multiple layers are laminated.

[0049] The adhesive material Tb is preferably made of a material that can maintain the adhesive tape DT adhered to the wafer W and the ring frame f and prevent chip components from scattering during the subsequent dicing process. Examples of materials that can be used for the adhesive material Tb include acrylic ester copolymers. Examples of the separator S include long strips of paper or plastic. Note that an adhesive or tacky adhesive may be used instead of the adhesive material Tb.

[0050] <Explanation of overall configuration> Here, the overall configuration of the adhesive sheet application device 1 according to Example 1 will be described. Fig. 3 is a plan view showing the basic configuration of the adhesive sheet application device 1 according to Example 1. The adhesive sheet application device 1 is configured to include a horizontally long rectangular portion 1a and a protruding portion 1b. The protruding portion 1b is configured to connect to the central portion of the rectangular portion 1a and protrude upward. In the following description, the longitudinal direction of the rectangular portion 1a will be referred to as the left-right direction (x-direction), and the horizontal direction (y-direction) perpendicular to this will be referred to as the front-rear direction.

[0051] A wafer transfer mechanism 3 is provided on the right side of the rectangular section 1a. Two containers 5 containing wafers W are placed side by side at a position near the lower right side of the rectangular section 1a. Inside the containers 5, wafers W with protective tape PT attached to their surfaces are stored in multiple stages with their front sides facing downward. A frame recovery unit 6 is provided on the left end of the rectangular section 1a to recover a mount frame MF (shown in FIG. 9) that has completed mounting of a wafer W.

[0052] Arranged in this order from the right on the upper side of the rectangular portion 1a are an aligner 7, a holding table 9, and a frame supply unit 12. Arranged on the protruding portion 1b is a bonding unit 13 that bonds a supporting adhesive tape DT (dicing tape) to the back surface of the wafer W and the ring frame f.

[0053] 4, the wafer transfer mechanism 3 is provided with a wafer transfer device 16 supported on the right side of a guide rail 15 that is horizontally installed on the upper part of the rectangular portion 1a so as to be capable of reciprocating left and right. Also, a frame transfer device 17 is provided on the left side of the guide rail 15 so as to be capable of moving left and right.

[0054] The wafer transfer device 16 is configured to transfer the wafer W taken out from either one of the containers 5 left and right and front and rear. The wafer transfer device 16 is equipped with a left and right movable table 18 and a front and rear movable table 19.

[0055] The left-right movable base 18 is configured to be able to reciprocate in the left-right direction along the guide rail 15. The front-rear movable base 19 is configured to be able to reciprocate in the front-rear direction along the guide rail 20 provided on the left-right movable base 18.

[0056] Furthermore, a holding unit 21 that holds the wafer W is provided below the forward / backward movable platform 19. The holding unit 21 is configured to be able to move back and forth in the up and down direction (z direction) along an elevation rail 22 that extends vertically. The holding unit 21 is also able to rotate around an axis in the z direction by a rotation shaft (not shown).

[0057] A horseshoe-shaped holding arm 23 is provided on the lower part of the holding unit 21. A plurality of slightly protruding suction pads are provided on the holding surface of the holding arm 23, and the wafer W is held by suction via the suction pads. The holding arm 23 is also connected to a compressed air device via a flow path formed therein and a connecting flow path connected to the base end of the flow path.

[0058] By utilizing the above-described movable structure, the wafer W held by suction can be moved back and forth, left and right, and rotated around the z-axis by the holding arm 23.

[0059] The frame transfer device 17 includes a left-right movable table 24, a front-rear movable table 25, an articulating link mechanism 26 connected to the bottom of the left-right movable table 24, and a suction plate 27 attached to the bottom of the articulating link mechanism 26. The suction plate 27 suction-holds the wafer W. A plurality of suction pads 28 that suction-hold the ring frame f are arranged around the suction plate 27. Therefore, the frame transfer device 17 can suction-hold the ring frame f or mount frame MF placed and held on the holding table 9, and transfer it up and down and back and forth and left and right. The suction pad 28 can be adjusted by sliding horizontally to accommodate the size of the ring frame f.

[0060] 5 and 6, the holding table 9 is a metal chuck table having the same shape and size as the wafer W, and is connected in communication with a vacuum device 31 and a pressure device 32 provided outside. The operations of the vacuum device 31 and the pressure device 32 are controlled by a control unit 33.

[0061] In the first embodiment, the holding table 9 has annular protrusions 9a on its outer periphery and is hollow as a whole. The protrusions 9a are positioned in a plan view so as to substantially coincide with the arrangement of the annular protrusions Ka of the wafer W. The protrusions 9a support the annular protrusions Ka of the wafer W, allowing the holding table 9 to hold the wafer W without coming into contact with the thin, flat recesses He.

[0062] 5, the holding table 9 is housed in a lower housing 29A that constitutes the chamber 29, and is connected to one end of a rod 35 that passes through the lower housing 29A. The other end of the rod 35 is connected to and driving an actuator 37 that includes a motor or the like. Therefore, the holding table 9 can move up and down inside the chamber 29.

[0063] The lower housing 29A includes a frame holding portion 38 that surrounds the lower housing 29A. The frame holding portion 38 is configured so that when the ring frame f is placed on it, the upper surface of the ring frame f is flush with the cylindrical top of the lower housing 29A. In addition, it is preferable that the cylindrical top of the lower housing 29A is subjected to a release treatment.

[0064] As shown in Fig. 3, the holding table 9, together with the lower housing 29A, is configured to be able to move back and forth between an initial position and a bonding position along rails 40 attached in the front-to-rear direction. The initial position is located inside the rectangular portion 1a, and is the position where the holding table 9 is shown by the solid line in Fig. 3. At this initial position, the wafer W and the ring frame f are placed on the holding table 9.

[0065] The joining position is inside the protrusion 1b, and is the position where the holding table 9 is indicated by the dotted line in Fig. 3. By moving the holding table 9 to the joining position, it becomes possible to execute the joining step of joining the adhesive tape DT to the wafer W placed on the holding table 9.

[0066] The frame supply unit 12 stores drawer-type cassettes that store a predetermined number of stacked ring frames f.

[0067] As shown in Fig. 5, the joining unit 13 is composed of a sheet supply section 71, a separator recovery section 72, a sheet joining section 73, a sheet recovery section 74, and a sheet punching section 76. The sheet supply section 71 is equipped with a supply bobbin on which a roll of adhesive tape DT for support is wound. The sheet supply section 71 is configured to peel off the separator S by a peeling roller 75 in the process of supplying the adhesive tape DT from the supply bobbin of the sheet supply section 71 to the joining position. The supply bobbin provided in the sheet supply section 71 is interlocked with an electromagnetic brake to apply an appropriate rotational resistance. This prevents excessive tape from being unwound from the supply bobbin.

[0068] The separator recovery section 72 is provided with a recovery bobbin that winds up the separator S peeled off from the adhesive tape DT. This recovery bobbin is controlled by a motor to rotate forward and backward.

[0069] The sheet pasting section 73 is composed of a chamber 29, a sheet pasting mechanism 81, a sheet cutting mechanism 82, and the like.

[0070] The chamber 29 is made up of a lower housing 29A and an upper housing 29B. The lower housing 29A is disposed so as to surround the holding table 9, and moves back and forth in the front-to-back direction together with the holding table 9 between the initial position and the joining position. The upper housing 29B is disposed on the protruding portion 1b, and is configured to be able to move up and down.

[0071] 6, lower housing 29A is connected in communication with pressure-reducing flow path 201, and upper housing 29B is connected in communication with pressure-reducing flow path 202. Both flow paths 201 and 202 are connected in communication with vacuum device 31 via pressure-reducing flow path 101. That is, lower housing 29A is connected in communication with pressure-reducing vacuum device 31 via flow paths 101 and 201. And upper housing 29B is connected in communication with pressure-reducing vacuum device 31 via flow paths 101 and 202.

[0072] Furthermore, lower housing 29A is connected in communication with pressurizing flow path 203, and upper housing 29B is connected in communication with pressurizing flow path 204. Flow path 203 and flow path 204 are both connected in communication with pressurizing device 32 via pressurizing flow path 102. That is, lower housing 29A is connected in communication with pressurizing device 32 via flow path 102 and flow path 203. And upper housing 29B is connected in communication with pressurizing device 32 via flow path 102 and flow path 204.

[0073] Flow path 101 is equipped with an electromagnetic valve 103, and flow path 102 is equipped with an electromagnetic valve 104. Both housings 29A and 29B are connected to flow path 109, which is equipped with electromagnetic valves 105 and 107 for venting to the atmosphere. Flow path 201 is equipped with an electromagnetic valve 113, and flow path 203 is equipped with an electromagnetic valve 114.

[0074] Furthermore, upper housing 29B is connected to flow path 111 equipped with electromagnetic valve 110 that adjusts the once-reduced internal pressure by leakage. Electromagnetic valve 110 is provided with aperture adjustment valve 112. The aperture adjustment valve 112 adjusts the amount of gas leaked through flow path 111 by appropriately adjusting the aperture of electromagnetic valve 110. Opening and closing of these electromagnetic valves 103, 104, 105, 107, 113, and 114, adjustment of the aperture of electromagnetic valve 110, operation of vacuum device 31, and operation of pressurizing device 32 are controlled by control unit 33.

[0075] That is, the vacuum device 31 is configured to adjust the pressure reduction between the space on the lower housing 29A side and the space on the upper housing 29B side, while the pressure device 32 is configured to adjust the pressure increase between the space on the lower housing 29A side and the space on the upper housing 29B side.

[0076] In the first embodiment, when the electromagnetic valve 103 is disposed in the flow path 101, the electromagnetic valve 113 may be disposed in the flow path 202 instead of the flow path 201. When the electromagnetic valve 113 is disposed in the flow path 201, the electromagnetic valve 103 may be disposed in the flow path 202 instead of the flow path 101. When the electromagnetic valve 104 is disposed in the flow path 102, the electromagnetic valve 114 may be disposed in the flow path 204 instead of the flow path 203. When the electromagnetic valve 114 is disposed in the flow path 203, the electromagnetic valve 104 may be disposed in the flow path 204 instead of the flow path 102.

[0077] The sheet joining mechanism 81 includes a movable table 84, a joining roller 85, and a nip roller 86. The movable table 84 moves horizontally from side to side along a guide rail 88 installed in the left-right direction. The joining roller 85 is journaled on a bracket connected to the tip of a cylinder provided on the movable table 84. The nip roller 86 is disposed on the sheet collection unit 74 side, and includes a feed roller 89 driven by a motor and a pinch roller 90 that moves up and down by a cylinder.

[0078] The sheet cutting mechanism 82 is provided on an elevation drive table 91 that raises and lowers the upper housing 29B, and includes a support shaft 92 extending in the z direction and a boss portion 93 that rotates around the support shaft 92. The boss portion 93 includes a plurality of support arms 94 extending in the radial direction. A disk-shaped cutter 95 that cuts the adhesive tape DT along the ring frame f is provided at the tip of at least one of the support arms 94 so as to be movable up and down. A pressure roller 96 is provided at the tip of the other support arms 94 so as to be movable up and down.

[0079] The sheet recovery section 74 is provided with a recovery bobbin that winds up the unnecessary adhesive tape DT that has been peeled off after cutting. This recovery bobbin is controlled to rotate forward and backward by a motor (not shown).

[0080] 4, the frame collection unit 6 is equipped with a cassette 41 that loads and collects mount frames MF. This cassette 41 is equipped with a vertical rail 45 that is connected and fixed to the device frame 43, and an elevator 49 that is raised and lowered by a motor 47 along the vertical rail 45. Therefore, the frame collection unit 6 is configured so that the mount frame MF is placed on the elevator 49 and lowered at a pitch feed.

[0081] The sheet punching unit 76 is disposed inside the upper housing 29B. As shown in FIG. 7, the sheet punching unit 76 includes a lifting drive table 97 and a rotating shaft 99. The lifting drive table 97 is configured to be movable up and down in the z direction inside the upper housing 29B. The rotating shaft 99 extends in the z direction and is connected to the lower part of the lifting drive table 97. The rotating shaft 99 is configured to be rotatable around an axis in the z direction by a motor (not shown).

[0082] Support arms 127 extending radially from the rotating shaft 99 are provided on the side of the rotating shaft 99. The base end of each support arm 127 is connected to the rotating shaft 99. A cutter 129 supported by a cutter holder 128 is disposed on the tip end of each support arm 127. In the first embodiment, the sheet punching unit 76 is provided with four support arms 127, but the number of support arms 127 may be changed as appropriate.

[0083] The cutter 129 forms a through hole in the adhesive tape DT inside the chamber 29, and is disposed below the cutter holder 128 with the cutter blade facing downward. That is, as the lifting drive base 97 moves up and down in the z direction, the cutters 129 supported by each support arm 127 move up and down in the z direction together with the lifting drive base 97. Furthermore, as the rotating shaft 99 rotates, each cutter 129 moves together with the support arm 127 along a circular orbit L1 centered on the rotating shaft 99.

[0084] <Overview of operation> Here, a description will be given of the basic operation of the adhesive sheet joining apparatus 1 according to Example 1. Fig. 8 is a flowchart illustrating a series of steps for joining the adhesive tape DT to the wafer W using the adhesive sheet joining apparatus 1.

[0085] Step S1 (supply of workpiece) When a bonding command is issued, the ring frame f is transferred from the frame supply unit 12 to the frame holding unit 38 of the lower housing 29A, and the wafer W is transferred from the container 5 to the holding table 9.

[0086] That is, the frame transfer device 17 picks up the ring frame f from the frame supply unit 12 and transfers it to the frame holding unit 38. When the frame transfer device 17 releases the ring frame f from suction and moves up, it aligns the ring frame f. This alignment is performed, for example, by synchronously moving a plurality of support pins erected so as to surround the frame holding unit 38 toward the center. The ring frame f remains set in the frame holding unit 38 and waits until the wafer W is transferred thereto.

[0087] While the frame transfer device 17 transfers the ring frame f, the wafer transfer device 16 inserts the holding arm 23 between the wafers W stored in multiple stages inside the container 5. The holding arm 23 suction-holds the wafer W, carries it out, and transfers it to the aligner 7. The aligner 7 suction-holds the center of the wafer W with a suction pad protruding from the center. At the same time, the wafer transfer device 16 releases the suction of the wafer W and retreats upward. The aligner 7 holds the wafer W with the suction pad and rotates it, aligning it based on the notch, etc.

[0088] When the alignment is complete, the suction pad holding the wafer W by suction is caused to protrude from the surface of the aligner 7. The wafer transfer device 16 moves to that position and suction-holds the wafer W. The suction pad releases suction and descends.

[0089] The wafer transfer device 16 moves above the holding table 9 and places the wafer W on the holding table 9 with the surface to which the protective tape PT is attached facing downward. When the holding table 9 suction-holds the wafer W and the frame holding section 38 suction-holds the ring frame f, the lower housing 29A moves along the rails 40 from the initial position to the joining position on the sheet joining mechanism 81 side. The state in which the wafer W has been supplied to the holding table 9 and moved to the joining position is shown in FIG.

[0090] Step S2 (supply of adhesive sheet) When a workpiece is supplied by the wafer transport device 16 or the like, the adhesive tape DT is supplied in the joining unit 13. That is, a predetermined amount of adhesive tape DT is fed from the sheet supply unit 71 while the separator S is peeled off. The adhesive tape DT, which is long overall, is guided above the joining position along a predetermined transport path.

[0091] Step S3 (Formation of chamber) When the workpiece and adhesive tape DT are supplied, the joining roller 85 descends as shown in Fig. 11. Then, while rolling over the adhesive tape DT, it joins the adhesive tape DT across the ring frame f and the top of the lower housing 29A. In conjunction with the movement of this joining roller 85, a predetermined amount of adhesive tape DT is fed from the sheet supply unit 71 while the separator S is peeled off.

[0092] When the adhesive tape DT has been joined to the ring frame f, the joining roller 85 is returned to its initial position and the upper housing 29B is lowered. As the upper housing 29B is lowered, the portion of the adhesive tape DT joined to the top of the lower housing 29A is sandwiched between the upper housing 29B and the lower housing 29A, as shown in FIG. 12, and the chamber 29 is formed.

[0093] At this time, the adhesive tape DT functions as a sealant, and the adhesive tape DT divides the chamber 29 into two spaces. That is, the chamber 29 is divided by the adhesive tape DT into a lower space H1 on the lower housing 29A side and an upper space H2 on the upper housing 29B side. The wafer W located in the lower housing 29A faces the adhesive tape DT closely with a predetermined clearance therebetween.

[0094] Step S4 (first attachment process) After forming the chamber 29, the first bonding process is started. First, the control unit 33 closes the electromagnetic valves 104, 105, 107, 110, and 114 shown in FIG. 6, and opens the electromagnetic valves 103 and 113. Then, the control unit 33 operates the vacuum device 31 to reduce the air pressure in the lower space H1 and the upper space H2 to a predetermined value. An example of the predetermined value is 10 Pa to 100 Pa.

[0095] When the air pressures in the lower space H1 and the upper space H2 are reduced to a predetermined value, the control unit 33 closes the electromagnetic valve 103 and stops the operation of the vacuum device 31. Then, the control unit 33 controls the electromagnetic valves 103, 105, 107, and 113 connected to the lower space H1 to remain closed, while adjusting the opening of the electromagnetic valve 110 connected to the upper space H2 to allow leakage, so that the air pressure in the upper space H2 becomes higher than the air pressure in the lower space H1.

[0096] As the air pressure in the upper space H2 becomes higher than the air pressure in the lower space H1, a pressure difference Fa is generated between the two spaces, as shown in Fig. 13. As a result of the generation of the pressure difference Fa, the adhesive tape DT is pulled from the center toward the lower housing 29A, and is deformed into a convex shape. In this embodiment, in step S4, the air pressures in the upper space H2 and the lower space H1 are adjusted to 10 Pa, and then the air pressure in the upper space H2 is adjusted from 10 Pa to 100 Pa, thereby generating the pressure difference Fa.

[0097] After the differential pressure Fa is generated, the actuator 37 is driven to raise the holding table 9, as shown in Fig. 14. Due to the deformation of the adhesive tape DT caused by the differential pressure Fa and the rise of the holding table 9, the adhesive tape DT comes into contact with the back surface of the wafer W radially from the center toward the outer periphery inside the evacuated lower space H1. Due to this contact, the back surface of the wafer W is covered with the adhesive tape DT. Fig. 15 shows the state in which the back surface of the wafer W is covered with the adhesive tape DT.

[0098] Once the back surface of the wafer W is covered with the adhesive tape DT, the control unit 33 opens the electromagnetic valves 105 and 107 to open the upper space H2 and the lower space H1 to the atmosphere. This opening to the atmosphere completes the first bonding process. In this way, in the first bonding process, the adhesive tape DT is brought into contact with the back surface of the wafer W while the internal space of the chamber 29 is depressurized, thereby covering the back surface of the wafer W with the adhesive tape DT. Note that in Example 1, the first bonding process corresponds to the first integration process according to the present invention.

[0099] Step S5 (pressure difference adjustment process) After the first joining process using the differential pressure Fa is completed, the pressure difference adjustment process is started. The pressure difference adjustment process is a process for suppressing the pressure difference that will subsequently occur between the upper space H2 and the lower space H1 to a predetermined value or less. In the first embodiment, the sheet perforation unit 76 is used to form through holes in the adhesive tape DT, thereby suppressing the pressure difference that will subsequently occur between the upper space H2 and the lower space H1 to a predetermined value or less. An example of the predetermined value is 8000 Pa to 10000 Pa. The predetermined value is changed as appropriate depending on various conditions in the process of integrating the sheet material and the workpiece. An example of the conditions is the material of the wafer W or the thickness of the wafer W.

[0100] When step S5 starts, as shown in Fig. 16, the control unit 33 drives the lift drive table 97 to lower the sheet punching unit 76. As the sheet punching unit 76 lowers, each of the cutters 129 disposed on each of the support arms 127 pierces the adhesive tape DT. As the cutters 129 pierce the adhesive tape DT, through holes PH are formed in the adhesive tape DT in a portion between the wafer W and the ring frame f, as shown in Fig. 17. In Example 1, four cutters 129 are disposed so as to surround the rotation shaft unit 99, and therefore through holes PH are formed in four locations so as to surround the wafer W.

[0101] By forming the through holes PH, vent holes are formed that allow gas to flow between the upper space H2 and the lower space H1. That is, by forming the through holes PH in the adhesive tape DT, the state in which the interior of the chamber 29 is partitioned into the upper space H2 and the lower space H1 is eliminated. By allowing gas to flow between the upper space H2 and the lower space H1 via the through holes PH, the pressure difference generated between the upper space H2 and the lower space H1 in step S6 can be made equal to or less than a predetermined value. For convenience of explanation, even after the through holes PH are formed in the adhesive tape DT, the space on the side where the wafer W is placed, with the adhesive tape DT as the boundary, will be referred to as the lower space H1. The explanation will continue with the space on the opposite side of the adhesive tape DT from the lower space H1 as the upper space H2.

[0102] After the sheet punching unit 76 is lowered to pierce the adhesive tape DT with the cutters 129, the rotating shaft 99 is rotated around an axis in the z direction, as shown in Fig. 18. As the rotating shaft 99 rotates, each of the cutters 129 disposed on the tip side of the support arm 127 moves along a circular orbit L1, cutting the adhesive tape DT. The circular orbit L1 is a circular orbit that is centered on the rotating shaft 99 and has a diameter that is the length of the support arm 127. In other words, the circular orbit L1 is a circular orbit that is centered on the center Q of the wafer W shown in Fig. 19 and has a diameter that is the length of the support arm 127.

[0103] As the cutter 129 moves along the circular orbit L1, each of the through holes PH is widened into an arc along the circular orbit L1, as shown in Fig. 19. The rotation angle θ of the rotation shaft 99 in step S5 is set to an angle that allows the process of transporting the mount frame MF in step S8 to be carried out appropriately. Widening the through holes PH allows more gas to flow between the upper space H2 and the lower space H1, thereby further reducing the pressure difference that occurs between the upper space H2 and the lower space H1 in step S6.

[0104] After the through-holes PH are formed by the lowering and rotation of the sheet punching unit 76, the control unit 33 drives the lifting drive table 97 to raise the sheet punching unit 76 to its initial position, as shown in Fig. 20. While the sheet punching unit 76 is being raised, the control unit 33 controls the actuator 37 to lower the holding table 9 to its initial position. The pressure difference adjustment process according to the first embodiment is completed when the through-holes PH are formed at the predetermined positions.

[0105] Step S6 (second attachment process) After the through holes PH are formed in the adhesive tape DT by the sheet punching unit 76, the second joining process is started. In Example 1, the second joining process corresponds to the second integration process of the present invention. When the second joining process is started, the control unit 33 first closes the electromagnetic valves 103, 105, 107, 110, and 113 shown in FIG. 6 and opens the electromagnetic valves 104 and 114. The control unit 33 then operates the pressurizing device 32 to supply gas Ar to the lower space H1 and the upper space H2, thereby pressurizing the lower space H1 and the upper space H2 to a specific value PN. An example of the specific value PN is 0.3 MPa to 0.6 MPa. As the pressurizing device 32 performs the pressurizing operation, the air pressure in both the lower space H1 and the upper space H2 becomes higher than atmospheric pressure.

[0106] By pressurizing the upper space H2, as shown in FIG. 21, a pressing force V1 acts from the upper space H2 toward the adhesive tape DT. Note that, since the entire upper space H2 is pressurized, the pressing force V1 acts uniformly over the entire adhesive tape DT. Furthermore, by pressurizing the entire lower space H1, the pressing force V2 acts uniformly from the lower space H1 on the downward surface of the wafer W. That is, by pressurizing to a specific value PN higher than atmospheric pressure, the pressing forces V1 and V2 act between the adhesive tape DT and the wafer W. That is, by uniformly applying a force higher than atmospheric pressure, the adhesive tape DT is bonded to the back surface of the wafer W with high precision. As a result, the adhesion between the wafer W and the adhesive tape DT is improved, and it is possible to prevent the adhesive tape DT from peeling off from the back surface of the wafer W over time.

[0107] In Example 1, after the through holes PH are formed in the adhesive tape DT in step S5, the lower space H1 and the upper space H2 are pressurized to a specific value PN. Therefore, even if a pressure difference occurs between the air pressure Ph2 in the lower space H1 and the air pressure Ph1 in the upper space H2 due to factors such as the difference in the area between the lower space H1 and the upper space H2, the pressure difference is quickly eliminated. In other words, since gas can flow between the lower space H1 and the upper space H2 through the through holes PH, it is possible to prevent imbalance between the air pressure Ph1 and the air pressure Ph2. Therefore, the pressure difference occurring between the lower space H1 and the upper space H2 is suppressed to a predetermined value or less. In effect, the pressure difference between the lower space H1 and the upper space H2 becomes close to zero.

[0108] The magnitude of pressing force V1 depends on atmospheric pressure Ph1, and the magnitude of pressing force V2 depends on atmospheric pressure Ph2. Therefore, by suppressing the difference between atmospheric pressures Ph1 and Ph2 to a predetermined value or less, the difference between pressing force V1 acting on the wafer W from the upper space H2 side and pressing force V2 acting on the wafer W from the lower space H1 side can be suppressed to a predetermined value or less. Therefore, by reducing the pressure difference between the lower space H1 and the upper space H2, it is possible to prevent the wafer W from cracking or chipping due to the pressure difference.

[0109] With lower space H1 and upper space H2 pressurized to a pressure higher than atmospheric pressure, a pressing force is applied between adhesive tape DT and wafer W for a predetermined time, and then control unit 33 stops pressurizing device 32. Control unit 33 then opens electromagnetic valves 105 and 107 to open lower space H1 and upper space H2 to the atmosphere. Control unit 33 raises upper housing 29B to open chamber 29, and raises holding table 9 to bring the surface of wafer W into contact with the wafer holding surface of holding table 9.

[0110] Step S7 (Cutting the sheet) While the processes relating to steps S4 to S6 are being performed in the chamber 29, the sheet cutting mechanism 82 is operated to cut the adhesive tape DT. At this time, as shown in Fig. 22, the cutter 95 cuts the adhesive tape DT attached to the ring frame f into the shape of the ring frame f, and the pressure roller 96 follows the cutter 95 to press the portion of the sheet to be cut on the ring frame f while rolling.

[0111] Since the first joining process in step S4 and the second joining process in step S5 are completed when the upper housing 29B is raised, the pinch roller 90 is raised to release the nip of the adhesive tape DT. Thereafter, as shown in Fig. 23, the nip roller 86 is moved to wind and collect the unnecessary adhesive tape DT after cutting toward the sheet collection unit 74, and a predetermined amount of adhesive tape DT is paid out from the sheet supply unit 71. Through the steps up to step S6, a mount frame MF is formed in which the ring frame f and the wafer W are integrated via the adhesive tape DT.

[0112] When the unnecessary adhesive tape DT has been wound up and collected, the nip roller 86 and the joining roller 85 return to their initial positions. Then, while holding the mount frame MF, the holding table 9 moves from the joining position to the initial position.

[0113] Step S8 (Recovering the mount frame) When the holding table 9 returns to its initial position, as shown in Figure 24, the suction pads 28 provided on the frame transport device 17 suction-hold the mount frame MF and remove the mount frame MF from the lower housing 29A. The frame transport device 17, which has suction-held the mount frame MF, transports the mount frame MF to the frame collection unit 6. The transported mount frame MF is loaded and stored in a cassette 41.

[0114] This completes one cycle of operations for bonding the adhesive tape DT to the wafer W. Thereafter, the above process is repeated until the number of mount frames MF reaches a predetermined number.

[0115] <Effects of the configuration of Example 1> According to the device of Example 1, the first joining process and the second joining process are performed using a chamber. That is, after the adhesive tape DT is joined to the wafer W in the first joining process, the second joining process is performed to join the adhesive tape DT to the wafer W with even greater precision so that the tape is more closely attached to the wafer W. With this configuration, the adhesive tape DT can be joined with high precision to the wafer W having the annular convex portion Ka on one surface, while avoiding damage to the wafer W.

[0116] In the first bonding step according to the present invention, the lower space H1 in which the wafer W is placed is depressurized inside the chamber 29. That is, the space around the adhesive tape DT and the wafer W is evacuated by depressurization, so that when the adhesive tape DT comes into contact with the wafer W and covers the back surface of the wafer W, it is possible to prevent gas from being entrained between the adhesive tape DT and the wafer W. Therefore, it is possible to avoid a decrease in adhesion force due to entrainment of gas.

[0117] In the second bonding step according to the present invention, the pressure in the lower space H1 and the upper space H2 is increased to a pressure higher than atmospheric pressure, thereby bonding the adhesive tape DT to the rear surface of the wafer W with high precision.

[0118] When the differential pressure Fa is generated by reducing the pressure inside the chamber using a vacuum device, the magnitude of the differential pressure Fa generated by reducing the pressure from atmospheric pressure is equal to or less than atmospheric pressure. In other words, when the differential pressure Fa is used to press the adhesive tape DT against the wafer W, there is an upper limit to the magnitude of the force that presses the adhesive tape DT against the back surface of the wafer W.

[0119] Therefore, when the adhesive tape DT is brought into contact with the wafer W by the pressure difference Fa caused by the reduced pressure, the adhesion between the adhesive tape DT and the wafer W is low. Also, in the conventional configuration using the first pressing member, the pressing force can be applied only to a limited portion of the adhesive tape DT. Furthermore, the magnitude of the pressing force is insufficient, making it difficult to improve the adhesion between the adhesive tape DT and the wafer W.

[0120] In contrast, in the present invention, the pressure device 32 is used to pressurize the upper space H2 and the lower space H1 in the chamber 29 to a pressure higher than atmospheric pressure. That is, in the second joining process, pressing forces V1 and V2 that are sufficiently higher than the differential pressure Fa can be applied to the adhesive tape DT and the wafer W. Furthermore, the pressing forces V1 and V2 act over the entire surface of the adhesive tape DT that is joined to the wafer W. Therefore, by performing the second joining process, the adhesion between the adhesive tape DT and the wafer W can be greatly improved, and therefore, peeling of the adhesive tape DT from the wafer W can be prevented even after a period of time has passed since the series of joining processes was completed.

[0121] Furthermore, in the second bonding process, the magnitudes of the pressing forces V1 and V2 can be adjusted to any desired values ​​by appropriately controlling the pressure device 32. Therefore, even if various conditions such as the constituent material of the adhesive material Tb, or the size of the wafer W and the thickness of the annular convex portion Ka are changed, the magnitudes of the pressing forces V1 and V2 can be appropriately adjusted to reliably bond the adhesive tape DT to the surface of the wafer W on which the annular convex portion is formed.

[0122] In the adhesive sheet joining device 1 according to the first embodiment, the pressure difference adjustment process is performed before the second joining process, thereby reducing the difference in air pressure generated between the upper space H2 and the lower space H1 in the second joining process to a predetermined value or less. By performing the pressure difference adjustment process, the adhesion between the adhesive tape DT and the wafer W can be improved, while the occurrence of damage to the wafer W, such as cracks or chips, can be more reliably prevented.

[0123] The effect of the pressure difference adjustment process will now be described. Through careful investigation, the inventors have found a problem in that, when the interior of chamber 29 is divided into upper space H2 and lower space H1 by adhesive tape DT, and the upper space H2 and lower space H1 are pressurized to a pressure equal to or higher than atmospheric pressure, damage such as cracks or chips occurs in the wafer W.

[0124] As a result of further intensive research, the inventors have come up with the following hypothesis: By pressurizing the interior of chamber 29 to atmospheric pressure or higher, a large pressure difference occurs between the pressing force V1 generated in upper space H2 and the pressing force V2 generated in lower space H1. Because both upper space H2 and lower space H1 are connected to pressurizing device 32 via flow path 102, the amounts of gas supplied to upper space H2 and lower space H1 are equal.

[0125] However, due to the difference in the volumes of the upper space H2 and the lower space H1, the rate at which the air pressure (pressure V1) in the upper space H2 increases may differ from the rate at which the air pressure (pressure V2) in the lower space H1 increases, even if the gas supply amounts are equal. As a result, it is thought that damage such as cracks or chips may occur in the wafer W due to the pressure difference between the pressing forces V1 and V2 in step S6.

[0126] Therefore, in the adhesive sheet joining apparatus 1 according to Example 1, before the second joining step, through holes PH are formed in the adhesive tape DT using the sheet punching unit 76. By allowing gas to circulate between the upper space H2 and the lower space H1 via the through holes PH, even if a pressure difference occurs between the pressing forces V1 and V2, the pressure difference is quickly eliminated by the flow of gas. Therefore, when the interior of the chamber 29 is pressurized in step S6, the pressure difference between the pressing forces V1 and V2 can be maintained at a predetermined value or less. Therefore, the high pressing forces V1 and V2 can be used to enhance the adhesion between the adhesive tape DT and the wafer W, while preventing damage to the wafer W due to the pressure difference between the pressing forces V1 and V2. [Example]

[0127] Hereinafter, a second embodiment of the present invention will be described with reference to the drawings. In the first embodiment, a configuration was described in which through holes PH are formed in the adhesive tape DT using a sheet punching unit 76, thereby reducing the pressure difference occurring between the upper space H2 and the lower space H1 in the second joining process in step S6. In contrast, in the second embodiment, the control unit 33 gradually pressurizes each of the upper space H2 and the lower space H1, thereby reducing the pressure difference occurring between the upper space H2 and the lower space H1 in step S6. Note that the same components as those in the adhesive sheet joining device 1 of the first embodiment are assigned the same reference numerals, and different components will be described in detail.

[0128] The adhesive sheet application device 1 according to Example 2 has the same configuration as the adhesive sheet application device 1 according to Example 1, except for the chamber 29. However, in Example 2, the pressure difference generated between the upper space H2 and the lower space H1 is reduced by a control pattern set by the control unit 33. Therefore, the sheet punching unit 76 can be omitted in the adhesive sheet application device 1 according to Example 2.

[0129] 58 is a longitudinal cross-sectional view of a chamber according to Example 2. In Example 2, electromagnetic valve 104 is disposed in flow path 204, and electromagnetic valve 114 is disposed in flow path 203. That is, by having control unit 33 independently control the opening and closing operations of electromagnetic valves 104 and 114, Example 2 is configured to be able to independently control the on / off of the supply of gas to lower space H1 and the on / off of the supply of gas to upper space H2.

[0130] <Pressure control according to Example 2> Details of the control by the control unit 33 to pressurize the upper space H2 and the lower space H1 in the second embodiment will be described in comparison with the pressurization control in the first embodiment. Fig. 25 is a graph illustrating a general control method by which the control unit 33 pressurizes the air pressure in the upper space H2 and the lower space H1 from an initial value PS to a specific value PN. Note that the explanation will be given using an example in which the initial value PS is 1 atmosphere and the specific value PN is 6 atmospheres. Also, it is assumed that the volume of the lower space H1 is larger than that of the upper space H2, and the pressurization speed in the lower space H1 is slower than that in the upper space H2.

[0131] Generally, when the upper space H2 and the lower space H1 are pressurized to a pressure higher than atmospheric pressure, the pressure in each of the upper space H2 and the lower space H1 is increased from an initial value PS to a predetermined specific value PN in one pressurization step. That is, the control unit 33 pressurizes each of the upper space H2 and the lower space H1, which are in a state of 1 atmosphere, with the specific value PN being set to a target value of 6 atmospheres.

[0132] Because both the upper space H2 and the lower space H1 are connected to the pressurizing device 32 via the same flow path 102, the same amount of gas is supplied to each of the upper space H2 and the lower space H1 per unit time. However, the rate at which the air pressure Ph1 in the upper space H2, shown by the solid line in FIG. 25, increases is different from the rate at which the air pressure Ph2 in the lower space H1, shown by the dotted line in FIG. 25, increases. That is, because the volume of the upper space H2 is smaller than the volume of the lower space H1, the rate at which the air pressure Ph1 increases is greater than the rate at which the air pressure Ph2 increases. Therefore, the air pressure Ph1 quickly reaches the target value of 6 atmospheres at time ta and then maintains that target value. On the other hand, the rate at which the air pressure Ph2 increases is slower, so it does not reach the target value of 6 atmospheres at time ta but reaches 6 atmospheres at time tb, which is later than time ta.

[0133] Thus, in a typical pressurization control pattern in which pressure is increased to a specific value PN by a single pressurization step Rv, the pressure difference Ds between the atmospheric pressure Ph1 and the atmospheric pressure Ph2 becomes very large. That is, as shown in FIG. 25, the pressure difference Ds becomes large at time ta. When pressurization is performed at the pressurization speed shown in FIG. 25, the pressure difference Ds at time ta is greater than 2 atmospheres. As a result, due to the very large pressure difference Ds, a large differential pressure acts on the wafer W in step S6, making the wafer W more susceptible to damage.

[0134] On the other hand, in the pressurization control according to the second embodiment, the process of pressurizing the upper space H2 and the lower space H1 is divided into n pressurization steps R1 to Rn, and both spaces are pressurized in stages, as shown in Fig. 26. The value of n may be changed as appropriate as long as it is an integer of 2 or more.

[0135] In each of the divided pressurization steps R1 to Tn, the electromagnetic valves 104 and 114 are opened to pressurize the upper space H2 and the lower space H1 to a target value M determined for each pressurization step. Then, the upper space H2 or the lower space H1 that reaches the target value M first is controlled to maintain the air pressure at the target value M until the other space reaches the target value M.

[0136] For example, if the air pressure in the upper space H2 reaches the target value M first, the control unit 33 closes the electromagnetic valve 104 at the time the air pressure in the upper space H2 reaches the target value M, thereby stopping the supply of gas to the upper space H2. Meanwhile, the control unit 33 keeps the electromagnetic valve 114 open to continue the supply of gas to the lower space H1. Through this control, the air pressure in the upper space H2 is maintained at the target value M, while the air pressure in the lower space H1 increases toward the target value M. If the air pressure in the lower space H1 reaches the target value M first, the control unit 33 controls the electromagnetic valve 104 to close while keeping the electromagnetic valve 104 open. When the air pressures in both the lower space H1 and the upper space H2 reach the target value M, the next pressurization step R is initiated, and the electromagnetic valves 104 and 114 are both opened to pressurize the lower space H1 and the upper space H2.

[0137] The target values ​​M set for each of the pressurizing steps R1 to Rn are distinguished as target values ​​M1 to Mn. As an example, the target value M set for the pressurizing step R1 is referred to as target value M1 to distinguish it from the target values ​​M of the other pressurizing steps R2 to Rn. The target values ​​M1 to Mn are predetermined to increase in stages. In other words, target value M2 is set to be higher than target value M1, and target value Mn is set to be the highest.

[0138] The number of pressurization steps generated by dividing the process of pressurizing the upper space H2 and the lower space H1, i.e., the value of n, may be changed as appropriate. That is, the number n of pressurization steps R1 to Rn is determined in advance so that the pressure difference between the upper space H2 and the lower space H1 is maintained at or below a predetermined value.

[0139] 26 illustrates an example of a configuration in which the process of pressurizing the upper space H2 and the lower space H1 is divided into five pressurization steps R1 to T5, and both spaces are pressurized from 1 atmosphere to 6 atmospheres. In this case, first, in the first pressurization step R1, the target value M1 is set to 2 atmospheres. That is, the control unit 33 controls the pressurization device 32 so that the upper space H2 and the lower space H1 are pressurized from the starting value of 1 atmosphere to the target value M1 of 2 atmospheres.

[0140] When the first pressurization step R1 is started at time t0, the air pressure Ph1 in the upper space H2 quickly reaches the target value of 2 atmospheres at time t1. When the air pressure Ph1 in the upper space H2 reaches the target value, the control unit 33 switches the electromagnetic valve 104 from an open state to a closed state while maintaining the electromagnetic valve 114 in an open state. This control stops the supply of gas to the upper space H2 while continuing the supply of gas to the lower space H1. The air pressure Ph1 then remains at the target value M1 of 2 atmospheres without increasing until time t2, when the air pressure Ph2 in the lower space H1 reaches 2 atmospheres.

[0141] When both the upper space H2 and the lower space H1 reach the target pressure M1 of 2 atmospheres, the second pressurization step R2 is initiated. When the second pressurization step R2 is initiated, the control unit 33 controls both the electromagnetic valves 104 and 114 to be open, thereby supplying gas to the lower space H1 and the upper space H2.

[0142] In the second pressurization step R2, the target value M2 is set to 3 atmospheres, which is higher than the target value M1. That is, in the second pressurization step R2, the upper space H2 and the lower space H1 are pressurized from the starting value of 2 atmospheres to the target value M2 of 3 atmospheres. The air pressure Ph1 in the upper space H2 reaches the target value M2 of 3 atmospheres at time t3 and remains at 3 atmospheres until time t4. Then, when the air pressure Ph2 reaches 3 atmospheres (target value M2) at time t4, the second pressurization step R2 transitions to the third pressurization step R3.

[0143] In the third pressurization step R3, the target pressure M3 is set to 4 atmospheres, which is higher than the target pressure M2, and the upper space H2 and the lower space H1 are pressurized from 3 atmospheres to 4 atmospheres. The third pressurization step R3 begins at time t4, and at time t5, the air pressure Ph1 reaches 4 atmospheres, which is the target pressure M3. Then, at time t6, the air pressure Ph2 reaches 4 atmospheres, and the third pressurization step R3 transitions to the fourth pressurization step R4.

[0144] In the fourth pressurization step R4, the target value M4 is set to 5 atmospheres, which is higher than the target value M3, and the upper space H2 and the lower space H1 are pressurized from 4 atmospheres to 5 atmospheres. The fourth pressurization step R4 starts at time t6, and the air pressure Ph1 reaches 5 atmospheres at time t7. Then, the air pressure Ph2 reaches 5 atmospheres at time t8, and the fourth pressurization step R4 transitions to the fifth pressurization step R5.

[0145] In the fifth pressurization step R5, the target value M5 is set to the final target of 6 atmospheres (specific value PN), and the upper space H2 and the lower space H1 are pressurized from 5 atmospheres to 6 atmospheres. The fifth pressurization step R5 begins at time t8, and the atmospheric pressure Ph1 reaches 6 atmospheres at time t9. Then, at time t10, the atmospheric pressure Ph2 reaches 6 atmospheres, completing the entire process of pressurizing the upper space H2 and the lower space H1 from the initial value PS to the specific value PN.

[0146] In this way, by dividing the process of pressurizing the upper space H2 and the lower space H1 from the initial value PS to the specific value PN into multiple steps and pressurizing the upper space H2 and the lower space H1 in stages, the pressure difference Ds between the atmospheric pressure Ph1 and the atmospheric pressure Ph2 can be reduced in the second embodiment. In the configuration of the second embodiment shown in FIG. 26, the times at which the pressure difference Ds is maximized are times t1, t3, t5, t7, and t9 when the atmospheric pressure Ph1 reaches the target value in each of the pressurization steps R1 to R5. The maximum value of the pressure difference Ds in the second embodiment shown in FIG. 26 is much smaller than the maximum value of the pressure difference Ds in the configuration shown in FIG. 25, in which pressurization to the specific value PN is performed in a single pressurization step Rv.

[0147] That is, by dividing the process of pressurizing the upper space H2 and the lower space H1 to a specific value PN into a plurality of pressurization steps T1 to Tn and pressurizing in stages, the maximum value of the pressure difference Ds can be reduced. In other words, by repeating the operation of increasing the air pressure in the upper space H2 and the lower space H1 to the target value set in each of the pressurization steps R1 to Rn, the maximum value of the pressure difference Ds can be reduced.

[0148] The reason why the maximum value of the pressure difference Ds can be reduced is that by dividing the pressure into multiple pressurization steps R1 to Rn, the difference between the start value and the target value in each pressurization step can be reduced. Specifically, in the configuration shown in Fig. 25, in one pressurization step, the upper space H2 and the lower space H1 are pressurized from a start value (initial value PS) of 1 atmosphere to a target value (specific value PN) of 6 atmospheres. In other words, the amount of increase in pressure in one pressurization step (the difference between the start value and the target value) is 5 atmospheres. Therefore, if the pressure is increased by 5 atmospheres in one pressurization step, the pressure difference Ds can be a maximum of 5 atmospheres.

[0149] 26, the process of increasing the pressure from 1 atmosphere to 6 atmospheres is divided into five pressurization steps T1 to T5, so the amount of increase in pressure in each of the pressurization steps T1 to T5 is 1 atmosphere. Therefore, in each of the pressurization steps T1 to T5, the maximum value of the pressure difference Ds is kept below 1 atmosphere.

[0150] <Operation in Example 2> Here, the operation of the adhesive sheet application device 1 according to Example 2 will be described. The outline of the flowchart according to Example 2 is the same as the flowchart according to Example 1 shown in Fig. 8. The explanation of the same steps as those in the operation of the adhesive sheet application device 1 according to Example 1 will be simplified, and steps S5 and S6, which are different steps, will be described in detail.

[0151] Step S5 (pressure difference adjustment process) When the first joining process in step S4 is completed, the control unit 33 sets a pressurization control pattern for step S6. In other words, the control unit 33 sets a control pattern for pressurizing the upper space H2 and the lower space H1 to a pressure higher than atmospheric pressure. Specifically, the control unit 33 sets a control pattern for pressurizing the upper space H2 and the lower space H1 to a pressure higher than atmospheric pressure by executing five pressurization steps R1 to R5, each having a predetermined target value M1 to M5 that increases in stages.

[0152] Each of the pressurization steps R1 to R5 is a step for increasing the air pressure in the upper space H2 and the lower space H1 to a target value M determined for each pressurization step. When the control unit 33 sets a pressurization control pattern including the pressurization steps R1 to R5, the process of suppressing the pressure difference occurring between the upper space H2 and the lower space H1 to a predetermined value or less, i.e., the pressure difference adjustment process, is completed.

[0153] Step S6 (second attachment process) After the pressurization control pattern for the upper space H2 and the lower space H1 using the multiple pressurization steps R1 to R5 has been set, the second joining process is started. The control unit 33 closes the electromagnetic valves 103, 105, 107, 110, and 113 shown in FIG. 6 and opens the electromagnetic valves 104 and 114. The control unit 33 then operates the pressurizing device 32 to supply gas to the lower space H1 and the upper space H2, and independently controls the opening and closing of the electromagnetic valves 104 and 114, thereby gradually pressurizing the lower space H1 and the upper space H2 to a specific value PN according to the pressurization control pattern set in step S5. In the second embodiment, the air pressure in the lower space H1 and the upper space H2 is increased by 1 atmosphere in each of the five divided pressurization steps R1 to R5.

[0154] In each of the pressurization steps R1 to R5, when the air pressure of one of the lower space H1 and the upper space H2 reaches the target value M, the control unit 33 controls the pressurization device 32 so that the air pressure of one of the lower space H1 and the upper space H2 remains at the target value M until the air pressure of the other of the lower space H1 and the upper space H2 reaches the target value M.

[0155] For example, in a pressurization step R1 having a target value M1, if the air pressure Ph1 in the upper space H2 reaches the target value M1 before the air pressure Ph2 in the lower space H1 reaches the target value M1, the air pressure Ph1 is maintained at the target value M1 until the air pressure Ph2 reaches the target value M1 by opening the electromagnetic valve 114 and closing the electromagnetic valve 104. In other words, the air pressure Ph1 is not increased above the target value M1 until the air pressure Ph2 reaches the target value M1. Therefore, the pressure difference Ds between the lower space H1 and the upper space H2 generated in the pressurization step R1 is suppressed to be equal to or less than the increase in the air pressure in the pressurization step R1 (1 atmosphere or less in the second embodiment).

[0156] When the air pressures in both the upper space H2 and the lower space H1 reach the target value M1, the pressurization step R1 is completed and the next pressurization step R2 is initiated. In the pressurization step R2, the upper space H2 and the lower space H1 are pressurized to the target value M2. If the air pressure Ph1 in the upper space H2 reaches the target value M2 before the air pressure Ph2 in the lower space H1 reaches the target value M2, the air pressure Ph1 maintains the target value M2 until the air pressure Ph2 reaches the target value M2. When the air pressures in both the upper space H2 and the lower space H1 reach the target value M2, the pressurization step R2 is completed and the next pressurization step R3 is initiated. Thereafter, the pressurization steps R3 to R5 are executed in order to gradually pressurize the upper space H2 and the lower space H1.

[0157] In this way, by sequentially executing pressurization steps R1 to R5 that pressurize the air pressures in the upper space H2 and the lower space H1 to target values ​​M1 to M5, the air pressures in the upper space H2 and the lower space H1 are increased in stages from the initial value PS to a specific value PN. By dividing the process of pressurizing the upper space H2 and the lower space H1 from the initial value PS to the specific value PN into multiple pressurization steps R1 to R5, the upper limit of the pressure difference between the upper space H2 and the lower space H1 that occurs in each of the pressurization steps R1 to R5 is reduced according to the number of pressurization steps R1 to R5.

[0158] Therefore, by sequentially performing the pressurization steps R1 to R5 to pressurize the upper space H2 and the lower space H1 in stages, the pressure difference between the upper space H2 and the lower space H1 that occurs during the process of pressurizing the upper space H2 and the lower space H1 can be suppressed to a predetermined value or less. Therefore, even if the upper space H2 and the lower space H1 are pressurized to a pressure higher than atmospheric pressure, damage to the wafer W due to the pressure difference between the upper space H2 and the lower space H1 can be avoided.

[0159] After the pressure steps R1 to R5 are completed, the pressure forces V1 and V2 are applied to the wafer W for a predetermined time while the wafer W is pressurized to a specific pressure PN higher than atmospheric pressure, thereby adhering the adhesive tape DT to the wafer W in a more intimate contact. After the pressure forces V1 and V2 have been applied for the predetermined time, the control unit 33 stops the pressure device 32. The control unit 33 then fully opens the electromagnetic valves 105 and 107 to open the lower space H1 and the upper space H2 to the atmosphere. The control unit 33 then raises the upper housing 29B to open the chamber 29 and raises the holding table 9 to bring the surface of the wafer W into contact with the wafer holding surface of the holding table 9, thereby completing the process of step S6. After step S6 is completed, steps S7 and S8 are performed in the same manner as in Example 1 to produce the mount frame MF.

[0160] In the second embodiment, the pressure difference adjustment process is performed by setting a pressure control pattern by the control unit 33. That is, by setting the pressure control pattern set by the control unit 33 to a control pattern in which the upper space H2 and the lower space H1 are pressurized stepwise through a plurality of pressure steps R1 to R5, the pressure difference between the upper space H2 and the lower space H1 can be suppressed to a predetermined value or less in the second joining process. Therefore, even without incorporating a new mechanism such as the sheet punching unit 76 into the adhesive tape joining apparatus 1, by updating the program of the control unit 33 related to the pressure control pattern, it is possible to improve the adhesion between the wafer W and the adhesive tape DT while avoiding damage to the wafer W. [Example]

[0161] Hereinafter, a third embodiment of the present invention will be described with reference to the drawings. The adhesive sheet application device 1 according to the third embodiment has a common configuration with the adhesive sheet application device 1 according to the first embodiment. In the third embodiment, the configuration of the flow path and electromagnetic valve connected to the pressure applying device 32 differs from the configurations of the first embodiment or the second embodiment shown in Fig. 6. Furthermore, in the third embodiment, as in the second embodiment, the sheet punching unit 76 can be omitted.

[0162] 27 is a longitudinal cross-sectional view of a chamber according to Example 3. In Examples 1 and 2, the electromagnetic valves 104 and 114 are configured to switch between a fully open state and a fully closed state. That is, when the electromagnetic valves 104 and 114 are in the open state and gas is supplied to the lower space H1 and the upper space H2, the amount of gas supplied to the lower space H1 per unit time is equal to the amount of gas supplied to the upper space H2.

[0163] On the other hand, the chamber 29 according to Example 3 is configured to be able to independently adjust the amount of gas supplied to the lower space H1 per unit time and the amount of gas supplied to the upper space H2 per unit time. In other words, the rate at which the air pressure in the lower space H1 increases due to the supply of gas and the rate at which the air pressure in the upper space H2 increases due to the supply of gas can be independently adjusted.

[0164] In the same manner as in the second embodiment, in the third embodiment, the electromagnetic valve 104 is disposed in the flow path 204, and the electromagnetic valve 114 is disposed in the flow path 203. However, in a chamber 29 according to the third embodiment, as shown in Fig. 27, the electromagnetic valve 104 is provided with an on / off adjustment valve 115, and the electromagnetic valve 114 is provided with an on / off adjustment valve 116. The opening adjustment valve 115 adjusts the amount of gas supplied to the upper space H2 via the flow path 204 by appropriately adjusting the opening of the electromagnetic valve 104. The opening adjustment valve 116 adjusts the amount of gas supplied to the lower space H1 via the flow path 203 by appropriately adjusting the opening of the electromagnetic valve 114.

[0165] In addition to opening and closing the electromagnetic valves 104 and 114, the adjustment of the aperture of the electromagnetic valve 104 via the aperture adjustment valve 115 and the adjustment of the aperture of the electromagnetic valve 114 via the aperture adjustment valve 116 are both performed by the control unit 33. That is, in the third embodiment, by providing the aperture adjustment valve 115 and the aperture adjustment valve 116, it is possible not only to independently control the on / off of the gas supply to the lower space H1 and the upper space H2, but also to independently adjust the gas supply rate to the upper space H2 and the gas supply rate to the lower space H1.

[0166] As described above, in the third embodiment, when the pressurizing device 32 is operated, the rate at which the air pressure in the upper space H2 increases can be adjusted by adjusting the aperture of the electromagnetic valve 104. The rate at which the air pressure in the lower space H1 increases can be adjusted by adjusting the aperture of the electromagnetic valve 114. That is, in the third embodiment, the control unit 33 independently controls the aperture of the electromagnetic valve 114 and the aperture of the electromagnetic valve 104, thereby independently controlling the rate at which the air pressure in the upper space H2 increases and the rate at which the air pressure in the lower space H1 increases in step S6. The control unit 33 controls the aperture of the electromagnetic valve 114 and the aperture of the electromagnetic valve 104 so that the rate at which the air pressure in the upper space H2 increases and the rate at which the air pressure in the lower space H1 increases are equal, thereby suppressing the pressure difference between the upper space H2 and the lower space H1 to a predetermined value or less.

[0167] The mechanism for adjusting the pressure in the upper space H2, which includes the pressurizing device 32, the flow path 204, the electromagnetic valve 104, and the degree of opening adjustment valve 115, corresponds to the first pressure change mechanism in the present invention. The mechanism for adjusting the pressure in the lower space H1, which includes the pressurizing device 32, the flow path 203, the electromagnetic valve 114, and the degree of opening adjustment valve 116, corresponds to the second pressure change mechanism in the present invention.

[0168] <Operation in Example 3> Here, the operation of the adhesive sheet application device 1 according to Example 3 will be described. The outline of the flowchart according to Example 3 is the same as the flowchart according to Example 1 shown in Fig. 8. The explanation of the same steps as those in the operation of the adhesive sheet application device 1 according to Example 1 will be simplified, and steps S5 and S6, which are different steps, will be described in detail.

[0169] Step S5 (pressure difference adjustment process) In the third embodiment, when the first joining process in step S4 is completed, a process of suppressing the pressure difference occurring between the upper space H2 and the lower space H1 to a predetermined value or less is started. That is, the control unit 33 independently controls the aperture of the electromagnetic valve 114 provided in the flow path 203 for pressurizing the lower space and the aperture of the electromagnetic valve 104 provided in the flow path 204 for pressurizing the upper space. At this time, the aperture of the electromagnetic valve 114 and the aperture of the electromagnetic valve 104 are controlled so that the rate at which the air pressure in the upper space H2 increases and the rate at which the air pressure in the lower space H1 increases are equal to each other.

[0170] In the adhesive sheet application device 1 according to Example 3, as in the other Examples, the volume of the upper space H2 is smaller than the volume of the lower space H1. Therefore, when the opening degree of the electromagnetic valve 114 and the opening degree of the electromagnetic valve 104 are equal, the rate at which the air pressure in the upper space H2 increases is greater than the rate at which the air pressure in the lower space H1 increases. Therefore, the control unit 33 makes the opening degree of the electromagnetic valve 114 greater than the opening degree of the electromagnetic valve 104 so that the rates at which the air pressures in the upper space H2 and the lower space H1 increase are equal. The control unit 33 adjusts the opening degrees of the electromagnetic valves 114 and 104, thereby completing the pressure difference adjustment process.

[0171] Step S6 (second attachment process) After the control unit 33 adjusts the opening degrees of the electromagnetic valves 114 and 104, the second bonding process is started. That is, as shown in Figure 28, while the opening degree of the electromagnetic valve 114 is controlled to be larger than the opening degree of the electromagnetic valve 104, the control unit 33 operates the pressurizing device 32 to supply gas to each of the upper space H2 and the lower space H1. By supplying gas to each of the upper space H2 and the lower space H1, the control unit 33 increases the pressure in the upper space H2 and the lower space H1 to a pressure higher than atmospheric pressure.

[0172] As an example, when the pressure device 32 is operated with the opening degree of the electromagnetic valve 114 equal to the opening degree of the electromagnetic valve 104, the rate of increase of the air pressure Ph2 in the lower space H1 is smaller than the rate of increase of the air pressure Ph1 in the upper space H2, and therefore a large pressure difference Ds occurs between the air pressure Ph1 and the air pressure Ph2 (see Figure 25).

[0173] On the other hand, in the third embodiment, the pressurizing device 32 is operated under the condition that the opening of the electromagnetic valve 114 is controlled to be larger than the opening of the electromagnetic valve 104, so that the amount of gas Ar2 supplied to the lower space H1 per unit time is greater than the amount of gas Ar1 supplied to the upper space H2. Therefore, in the third embodiment, the rate of increase of the atmospheric pressure Ph2 is equal to the rate of increase of the atmospheric pressure Ph1, as shown in Fig. 29. That is, the rate of increase of the atmospheric pressure Ph2 is increased from the rate indicated by the two-dot chain line to the rate indicated by the solid line in Fig. 29.

[0174] By increasing the rate of increase of the atmospheric pressure Ph2 and making it equal to the rate of increase of the atmospheric pressure Ph1, the difference between the atmospheric pressures Ph1 and Ph2 is suppressed to a predetermined value or less. Therefore, the difference between the pressing force V1 acting on the wafer W from the upper space H2 side and the pressing force V2 acting on the wafer W from the lower space H1 side is suppressed to a predetermined value or less, thereby preventing damage to the wafer W in step S6.

[0175] By applying pressure forces V1 and V2 to the wafer W for a predetermined time while the wafer W is pressurized to a specific value PN higher than atmospheric pressure, the adhesive tape DT is adhered to the wafer W so as to be more closely attached to the wafer W. After applying pressure forces V1 and V2 for the predetermined time, the control unit 33 stops the pressure device 32. Then, the control unit 33 fully opens the electromagnetic valves 105 and 107 to open the lower space H1 and the upper space H2 to the atmosphere.

[0176] Thereafter, control unit 33 raises upper housing 29B to open chamber 29, and raises holding table 9 to bring the surface of wafer W into contact with the wafer holding surface of holding table 9, thereby completing the process of step S6. After step S6 is completed, steps S7 and S8 are performed in the same manner as in Example 1, thereby producing a mount frame MF in which wafer W and adhesive tape DT are integrated together.

[0177] In Example 3, the electromagnetic valve 104 is provided with an aperture adjustment valve 115, and the electromagnetic valve 114 is provided with an aperture adjustment valve 116, thereby providing a configuration in which the rate of increase in air pressure in the upper space H2 and the rate of increase in air pressure in the lower space H1 are each controlled independently. By controlling the pressure in the upper space H2 and the lower space H1 independently, the pressure difference between the upper space H2 and the lower space H1 that occurs in step S6 is suppressed to a predetermined value or less. In Example 3, the sheet punching section 76 is not required, and therefore there is no need to consider the position and area for forming the through holes PH in the adhesive tape DT.

[0178] Furthermore, by equalizing the rate of increase in the air pressure in the upper space H2 and the rate of increase in the air pressure in the lower space H1, it is possible to avoid the need to wait for the air pressure in one of the upper space H2 and the lower space H1 to reach the specific value PN after the other air pressure reaches the specific value PN. As shown in Figure 29, by increasing the rate of increase in the air pressure Ph2 in the lower space H1 to be equal to the rate of increase in the air pressure Ph1 in the upper space H2, the time at which the air pressure Ph2 reaches the specific value PN is advanced from tb to ta. As a result, the time at which both the upper space H2 and the lower space H1 reach the specific value PN can be advanced, thereby shortening the time required for the process of step S6. [Example]

[0179] Hereinafter, a fourth embodiment of the present invention will be described with reference to the drawings. The adhesive sheet application device 1 according to the fourth embodiment has a common configuration with the adhesive sheet application device 1 according to the first embodiment. However, the configuration of the chamber 29 in the fourth embodiment is different from that of the other embodiments.

[0180] 30 is a cross-sectional view of chamber 29 according to Example 4. Chamber 29 according to Example 4 includes a flow path 135 that connects lower housing 29A and upper housing 29B in communication with each other. Flow path 135 includes an electromagnetic valve 137, and the opening and closing operation of electromagnetic valve 137 is controlled by control unit 33. Opening electromagnetic valve 137 allows gas to flow between upper space H2 and lower space H1. In other words, opening electromagnetic valve 137 causes flow path 135 to function as an air vent that allows gas to flow between upper space H2 and lower space H1.

[0181] <Operation in Example 4> Here, the operation of the adhesive sheet application device 1 according to Example 4 will be described. The flowchart according to Example 4 is common to the flowchart according to Example 1 shown in Fig. 8. The explanation of the same steps as those in the operation of the adhesive sheet application device 1 according to Example 1 will be simplified, and steps S5 and S6, which are different steps, will be described in detail.

[0182] Step S5 (pressure difference adjustment process) In the fourth embodiment, when the first bonding process in step S4 is completed, a process for allowing gas to circulate between the upper space H2 and the lower space H1 is performed as a pressure difference adjustment process. That is, when step S5 starts, the control unit 33 performs control to open the electromagnetic valve 137. By opening the electromagnetic valve 137, gas can circulate between the upper space H2 and the lower space H1 via the flow path 135. When the control unit 33 opens the electromagnetic valve 137, the pressure difference adjustment process is completed.

[0183] Step S6 (second attachment process) The second bonding process is started after the control unit 33 opens the electromagnetic valve 137. First, the control unit 33 closes the electromagnetic valves 103, 105, 107, 110, and 113 shown in Fig. 6, and opens the electromagnetic valves 104 and 114. Then, while maintaining the electromagnetic valve 137 open, the control unit 33 operates the pressurizing device 32 to supply gas to the lower space H1 and the upper space H2, thereby pressurizing the lower space H1 and the upper space H2 to a specific value PN.

[0184] By pressurizing the upper space H2, a pressing force V1 acts from the upper space H2 toward the adhesive tape DT and the front side of the wafer W, and a pressing force V2 acts from the lower space H1 toward the back side of the wafer W (see FIG. 21). The application of the pressing forces V1 and V2, which are pressures higher than atmospheric pressure, enhances the adhesion between the adhesive tape DT and the wafer W.

[0185] In the fourth embodiment, after the electromagnetic valve 137 is opened in step S5, the lower space H1 and the upper space H2 are pressurized to a specific value PN higher than atmospheric pressure. Therefore, even if a pressure difference occurs between the air pressure Ph2 in the lower space H1 and the air pressure Ph1 in the upper space H2, the pressure difference is quickly eliminated by the flow of gas between the lower space H1 and the upper space H2 via the flow path 135. Therefore, the lower space H1 and the upper space H2 can be pressurized to a specific value PN higher than atmospheric pressure while the pressure difference occurring between the lower space H1 and the upper space H2 is suppressed to a predetermined value or less.

[0186] After applying pressure forces V1 and V2 for a predetermined time, control unit 33 stops pressure device 32. Then, control unit 33 fully opens electromagnetic valves 105 and 107 to open lower space H1 and upper space H2 to the atmosphere. Control unit 33 raises upper housing 29B to open chamber 29, and raises holding table 9 to bring the surface of wafer W into contact with the wafer holding surface of holding table 9, thereby completing the process of step S6. After step S6 is completed, steps S7 and S8 are performed in the same manner as in embodiment 1, thereby producing mount frame MF.

[0187] In Example 4, the gas can be circulated between the upper space H2 and the lower space H1 by providing the flow path 135 and the electromagnetic valve 137. Then, by pressurizing the upper space H2 and the lower space H1 to a pressure higher than atmospheric pressure with the electromagnetic valve 137 open, the pressure difference between the upper space H2 and the lower space H1 that occurs in step S6 can be suppressed to a predetermined value or less. In Example 4, the gas can be circulated between the upper space H2 and the lower space H1 without forming through holes PH in the adhesive tape DT, so the sheet perforation section 76 can be omitted. [Example]

[0188] Hereinafter, a fifth embodiment of the present invention will be described with reference to the drawings. In the first to fourth embodiments, the configuration of the present invention was described using an adhesive sheet application device 1 that applies adhesive tape DT to a wafer W having an annular convex portion Ka as a workpiece. In contrast, in the fifth embodiment, the configuration of the present invention will be described using a device sealing device 301 that, as an example of a configuration for integrating a workpiece and a sheet material, adheres an adhesive sheet-like sealing material to a device mounted on the workpiece to integrate the workpiece and the sheet material.

[0189] The configuration of the device sealing apparatus 301 according to Example 5 is basically the same as the configuration of the adhesive sheet bonding apparatus 1 according to Example 1. Therefore, the same components as those of the adhesive sheet bonding apparatus 1 according to Example 1 are denoted by the same reference numerals, and different components will be described in detail.

[0190] The device sealing apparatus 301 seals the device mounted on the workpiece with a sheet material, and in this embodiment seals the LED 311 by attaching a sheet-like sealing member BP to the substrate 310 on which the LED 311 is mounted.

[0191] <Workpiece and sheet material configuration> First, the configuration of the workpiece and sheet material according to this embodiment will be described. Fig. 31(a) is a perspective view showing the back side of the sealing member BP, and Fig. 31(b) is a vertical cross-sectional view of the sealing member BP. Fig. 32 is a perspective view showing the configuration of the substrate 310 to be sealed by the sealing member BP and the ring frame f.

[0192] As shown in Fig. 31(a), the sealing member BP according to this embodiment includes a sealing sheet BS and a conveying sheet BT. The sealing sheet BS is pre-cut into a predetermined shape corresponding to the shape of the substrate 310. In this embodiment, the sealing sheet BS is pre-cut into a substantially rectangular shape. Here, the substantially rectangular shape means a rectangular shape with rounded corners, as shown in Fig. 31(a). In this embodiment, the size of the sealing sheet BS is set to be larger than the substrate 310 and smaller than the inner diameter of the lower housing 29A described later.

[0193] The conveying sheet BT is long, and the sealing sheets BS are attached and held on the conveying sheet BT at a predetermined pitch. In Example 5, the sealing sheets BS correspond to the sheet material in the present invention.

[0194] As shown in Fig. 31(b), the conveying sheet BT has a laminated structure of a non-adhesive substrate BTa and an adhesive material BTb having adhesive properties. Examples of materials that make up the substrate BTa include polyolefin and polyethylene. Examples of materials that make up the adhesive material BTb include acrylic ester copolymers.

[0195] As shown in Fig. 31(b), the sealing sheet BS has a structure in which a non-adhesive base material BSa and an adhesive sealing material BSb are laminated. The base material BSa is attached to the adhesive material BTb of the conveying sheet BT, so that the conveying sheet BT holds the sealing sheet BS. Examples of materials that make up the base material BSa include polyolefin and polyethylene. In this embodiment, the shape of the sealing sheet BS is approximately rectangular, but this can be changed as appropriate depending on the shape of the substrate 310.

[0196] A separator BS (not shown) is attached to the sealing material BSb, and the adhesive surface of the sealing material BSb is exposed when the separator BS is peeled off. In this embodiment, OCA (Optical Clear Adhesive), an optically transparent adhesive, is used as the material constituting the sealing material BSb.

[0197] As shown in FIG. 32, a plurality of LEDs 311 and TFTs (not shown) are mounted in parallel in a two-dimensional matrix at the center of the surface of the substrate 310. That is, the LEDs 311 form unevenness on the surface of the substrate 310. The LEDs 311 are connected to the substrate 310 via TFTs or bumps (not shown). Examples of the substrate 310 include a glass substrate, an organic substrate, a circuit board, and a silicon wafer. In this embodiment, the substrate 310 is substantially rectangular, but the shape of the substrate 310 may be changed to any shape, such as a rectangle, a circle, or a polygon. In Example 5, the substrate 310 corresponds to the workpiece in the present invention. The LEDs 311 correspond to the device in the present invention.

[0198] The ring frame f is sized and shaped to surround the substrate 310. The device sealing apparatus 301 according to the embodiment seals the LEDs 311 mounted on the substrate 310 with the sealing sheet BS, thereby producing a sealed body BMF in which the substrate 310 and the ring frame f are integrated by the sealing sheet BS. In Example 5, the sealed body BMF corresponds to the semiconductor product in the present invention.

[0199] <Explanation of overall configuration> Here, the overall configuration of a device sealing apparatus 301 according to Example 5 will be described. Fig. 33 is a plan view showing the basic configuration of the device sealing apparatus 301 according to Example 5. The device sealing apparatus 301 is configured to include a horizontally long rectangular portion 301a and a protruding portion 301b. The protruding portion 301b is configured to be connected to the central portion of the rectangular portion 301a and protrude upward.

[0200] A substrate transport mechanism 303 is provided on the right side of the rectangular section 301a. Two containers 305 containing substrates 310 are placed in parallel at a position on the lower right side of the rectangular section 301a. A sealed body recovery unit 306 that recovers sealed bodies BMF is provided at the left end of the rectangular section 301a.

[0201] Arranged on the upper right side of the rectangular portion 301a are an aligner 7, a holding table 309, and a frame supply unit 12 in that order. Arranged on the protruding portion 301b is a sealing unit 313 that seals each of the LEDs 311 mounted on the substrate 310 with a sealing sheet BS.

[0202] 34, the substrate transport mechanism 303 is provided with a substrate transport device 316 supported on the right side of a guide rail 15 that is installed horizontally on the upper part of the rectangular section 301a so as to be movable back and forth in the left and right directions. Also, a frame transport device 17 is provided on the left side of the guide rail 15 so as to be movable in the left and right directions.

[0203] The substrate transfer device 316 is configured to be able to transfer the substrate 310 taken out from one of the containers 5 left and right and front and rear. The substrate transfer device 16 is equipped with a left and right movable table 18 and a front and rear movable table 19. A holding unit 21 that holds the substrate 310 is mounted below the front and rear movable table 19. A horseshoe-shaped holding arm 23 is mounted below the holding unit 21. The holding arm 23 suction-holds the substrate 310 via a suction pad provided on the holding surface. The holding arm 23 is configured to be able to move back and forth, left and right, and pivot about the z-axis while suction-holding the substrate 310.

[0204] 35 and other figures, holding table 309 is a metal chuck table having the same shape and size as substrate 310 or larger, and is connected in communication with vacuum device 31 and pressure device 32, which are provided externally. The operations of vacuum device 31 and pressure device 32 are controlled by control unit 33. Holding table 309 is housed in lower housing 29A that constitutes chamber 29, and is capable of moving up and down within chamber 29.

[0205] The holding table 309 in Example 5 differs from the holding table 9 in Example 1 in that it does not have an annular protrusion 9a. That is, since the substrate 310 does not have an annular protrusion Ka or a flat recess He, the holding table 309 in Example 5 does not need to have an annular protrusion 9a. Therefore, the holding table 309 is flat overall.

[0206] The lower housing 29A includes a frame holding portion 38 that surrounds the lower housing 29A. The frame holding portion 38 is configured so that when the ring frame f is placed on it, the upper surface of the ring frame f is flush with the cylindrical top of the lower housing 29A. In addition, it is preferable that the cylindrical top of the lower housing 29A is subjected to a release treatment.

[0207] As shown in Fig. 33, holding table 309 is configured to be able to move back and forth between an initial position and a sealing position along rails 40 attached in the front-rear direction. The initial position is inside rectangular portion 1a, and is the position where holding table 309 is shown by a solid line in Fig. 33. At this set position, substrate 310 is placed on holding table 309.

[0208] The sealing position is inside the protrusion 301b, and is the position where the holding table 309 is indicated by the dotted line in Fig. 33. By moving the holding table 309 to the sealing position, it becomes possible to perform the sealing process using the sealing material BP on the substrate 310 placed on the holding table 309. The frame supply unit 12 stores drawer-type cassettes that store a predetermined number of stacked ring frames f.

[0209] 5, the sealing unit 313 is composed of a sheet supply unit 371, a separator collection unit 72, a device sealing unit 373, and a sheet collection unit 374. The sheet supply unit 371 is configured to peel off the separator S by a separator peeling roller 75 in the process of supplying the sealing material BP to the sealing position from a supply bobbin on which a raw roll of the sealing material BP with a separator (sealing material BP with a separator S attached thereto) is loaded.

[0210] The separator recovery section 72 is provided with a recovery bobbin that winds up the separator S peeled off from the sealing member BP. This recovery bobbin is controlled by a motor to rotate forward and backward.

[0211] The device sealing section 373 is composed of a chamber 29, a device sealing mechanism 381, a sheet cutting mechanism 82, and the like.

[0212] The chamber 29 is composed of a lower housing 29A and an upper housing 29B. The lower housing 29A is disposed so as to surround the holding table 309, and moves back and forth in the front-to-rear direction together with the holding table 309 between an initial position and a sealing position. The upper housing 29B is disposed on the protrusion 301b, and is configured to be able to move up and down. In the fifth embodiment, the configuration of the chamber 29 is the same as that of the first embodiment shown in FIG. 6, and therefore details thereof will be omitted.

[0213] The device sealing mechanism 381 includes a movable table 84, a laminating roller 85, a nip roller 86, etc. The sheet cutting mechanism 82 is provided on an elevation drive table 91 that raises and lowers the upper housing 29B, and includes a spindle 92 extending in the z direction and a boss 93 that rotates around the spindle 92. The boss 93 includes a plurality of support arms 94 extending in the radial direction. A disk-shaped cutter 95 that cuts the conveying sheet BT of the sealing member BP along the ring frame f is provided at the tip of at least one of the support arms 94 so as to be movable up and down.

[0214] The sheet recovery section 374 is equipped with a recovery bobbin that winds up the unnecessary conveying sheet BT that has been peeled off after cutting. This recovery bobbin is controlled by a motor (not shown) for forward and reverse rotation. As shown in FIG. 4, the sealed body recovery section 306 is provided with a cassette 41 that loads and recovers sealed bodies BMF. This cassette 41 is equipped with a vertical rail 45 that is connected and fixed to the device frame 43, and an elevator 49 that is raised and lowered by a motor 47 along the vertical rail 45 in a screw feed manner. Therefore, the sealed body recovery section 306 is configured so that the sealed body BMF is placed on the elevator 49 and lowered at a pitch feed.

[0215] In the fifth embodiment, a sheet punching section 76 is disposed inside the upper housing 29B, similar to the first embodiment. In the fifth embodiment, the sheet punching section 76 forms through holes PH in the conveying sheet BT. The configuration of the sheet punching section 76 in the fifth embodiment is similar to the configuration in the first embodiment shown in FIG.

[0216] <Overview of operation> Here, a description will be given of the basic operation of the device sealing apparatus 301 according to Example 5. Fig. 36 is a flowchart illustrating a series of steps for manufacturing a sealed body BMF by using the device sealing apparatus 301 to seal the LEDs 311 mounted on the substrate 310 with the sealing sheet BS.

[0217] Step S1 (supply of workpiece) When a sealing command is issued, the ring frame f is transferred from the frame supply unit 12 to the frame holding unit 38 of the lower housing 29A, and the substrate 310 is transferred from the container 305 to the holding table 309.

[0218] That is, the frame transport device 17 picks up the ring frame f from the frame supply unit 12 and transfers it to the frame holding unit 38. When the frame transport device 17 releases the ring frame f from the suction and rises, it aligns the ring frame f. As an example of this alignment, it is performed by synchronously moving multiple support pins erected so as to surround the frame holding unit 38 toward the center. The ring frame f remains set in the frame holding unit 38 and waits until the substrate 310 is transported thereto.

[0219] While the frame transport device 17 transports the ring frame f, the substrate transport device 316 inserts the holding arm 23 between the substrates 310 stored in multiple stages. The holding arm 23 suction-holds the portion of the surface of the substrate 310 where the LEDs 311 are not mounted (the portion on the peripheral edge), carries it out, and transports it to the aligner 7. The aligner 7 suction-holds the center of the back surface of the substrate 310 with a suction pad protruding from the center. At the same time, the substrate transport device 316 releases the suction of the substrate 310 and moves upward. The aligner 7 holds the substrate 310 with the suction pad and rotates it, aligning it based on the notch, etc.

[0220] Once alignment is complete, the suction pad holding the substrate 310 by suction is caused to protrude from the surface of the aligner 7. The substrate transport device 316 moves to that position and suction-holds the substrate 310 from the front side. The suction pad releases suction and descends.

[0221] The substrate transport device 316 moves above the holding table 309 and places the substrate 310 on the holding table 309 with the surface on which the LEDs 311 are mounted facing upward. When the holding table 309 adsorbs and holds the substrate 310 and the frame holding section 38 adsorbs and holds the ring frame f, the lower housing 29A moves along the rails 40 from the initial position to the sealing position on the device sealing mechanism 381 side. The state in which the substrate 310 has been supplied to the holding table 309 and has moved to the sealing position is shown in Figure 37.

[0222] Step S2 (supply of encapsulating sheet) When the workpiece is supplied by the substrate conveying device 316 or the like, the sealing unit 313 supplies the sealing sheet BS. That is, a predetermined amount of sealing material BP is fed from the sheet supply unit 371 while the separator S is peeled off. The sealing material BP, which is long overall, is guided above the sealing position along a predetermined conveying path. At this time, as shown in FIG. 38 , the sealing sheet BS held by the conveying sheet BT is positioned so as to be located above the substrate 310 placed on the holding table 309.

[0223] Step S3 (Formation of chamber) When the workpiece and sealing sheet BS are supplied, the joining roller 85 descends as shown in Fig. 39. Then, the joining roller 85 rolls on the conveying sheet BT to join the conveying sheet BT across the ring frame f and the top of the lower housing 29A. In conjunction with the movement of the joining roller 85, a predetermined amount of sealing material BP is fed from the sheet supply unit 371 while the separator S is peeled off.

[0224] Once the conveying sheet BT has been attached to the ring frame f, the joining roller 85 is returned to its initial position and the upper housing 29B is lowered. As the upper housing 29B lowers, the portion of the conveying sheet BT attached to the top of the lower housing 29A is sandwiched between the upper housing 29B and the lower housing 29A, as shown in Figure 40, and the chamber 29 is formed.

[0225] At this time, the conveying sheet BT functions as a sealant, and the chamber 29 is divided into two spaces by the adhesive tape DT. That is, the chamber 29 is divided into a lower space H1 on the lower housing 29A side and an upper space H2 on the upper housing 29B side, with the conveying sheet BT in between. The substrate 310 located in the lower housing 29A faces the sealing sheet BS closely with a predetermined clearance therebetween.

[0226] Step S4 (first sealing process) After the chamber 29 is formed, the first sealing process is initiated. In Example 5, the first sealing process corresponds to the first integration process of the present invention. When the first sealing process is initiated, the control unit 33 first closes the electromagnetic valves 104, 105, 107, 110, and 114, and opens the electromagnetic valves 103 and 113. The control unit 33 then operates the vacuum device 31 to reduce the air pressure in the lower space H1 and the upper space H2 to a predetermined value. An example of the predetermined value is 10 Pa to 100 Pa.

[0227] When the air pressures in the lower space H1 and the upper space H2 are reduced to a predetermined value, the control unit 33 closes the electromagnetic valve 103 and stops the operation of the vacuum device 31. Then, the control unit 33 controls the electromagnetic valves 103, 105, 107, and 113 connected to the lower space H1 to remain closed, while adjusting the opening of the electromagnetic valve 110 connected to the upper space H2 to allow leakage, so that the air pressure in the upper space H2 becomes higher than the air pressure in the lower space H1.

[0228] As the air pressure in the upper space H2 becomes higher than the air pressure in the lower space H1, a pressure difference Fa is generated between the two spaces, as shown in Fig. 41. As a result of the generation of the pressure difference Fa, the adhesive tape DT is pulled from the center toward the lower housing 29A, and is deformed into a convex shape. In Example 5, similar to Example 1, the air pressures in the upper space H2 and the lower space H1 are adjusted to 10 Pa in step S4, and then the air pressure in the upper space H2 is adjusted from 10 Pa to 100 Pa, thereby generating the pressure difference Fa.

[0229] After the differential pressure Fa is generated, the actuator 37 is driven to raise the holding table 309, as shown in Fig. 42. Due to the deformation of the sealing member BP caused by the differential pressure Fa and the rise of the holding table 309, the sealing sheet BS comes into contact with the surface of the substrate 310 radially from the center toward the outer periphery inside the evacuated lower space H1. Due to this contact, each of the LEDs 311 mounted on the substrate 310 is covered with the sealing sheet BS.

[0230] Once the LED 11 is covered with the sealing sheet BS, the control unit 33 opens the electromagnetic valves 105 and 107 to open the upper space H2 and the lower space H1 to the atmosphere. This opening to the atmosphere completes the first sealing process. In this manner, in the first sealing process, the internal space of the chamber 29 is depressurized, and the sealing sheet BS is brought into contact with the surface of the substrate 310 to cover the LED 311. This operation results in the sealing sheet BS being attached to the substrate 310.

[0231] Step S5 (pressure difference adjustment process) After the first sealing process using the differential pressure Fa is completed, the pressure difference adjustment process is started. In the fifth embodiment, similar to the first embodiment, the sheet punching unit 76 is used to perform a process of suppressing the pressure difference that will subsequently occur between the upper space H2 and the lower space H1 to a predetermined value or less. That is, by forming through holes in the conveying sheet BT using the sheet punching unit 76, the pressure difference that will occur between the upper space H2 and the lower space H1 in step S6 is suppressed to a predetermined value or less.

[0232] 43, when step S5 starts, the control unit 33 drives the lifting drive table 97 to lower the sheet punching unit 76. As the sheet punching unit 76 lowers, each of the cutters 129 pierces the portion of the conveying sheet BT between the ring frame f and the sealing sheet BS. As the cutters 129 pierce the conveying sheet BT, through holes PH are formed in the portion of the conveying sheet BT between the ring frame f and the sealing sheet BS.

[0233] By forming the through holes PH, vent holes are formed that allow gas to flow between the upper space H2 and the lower space H1. That is, by forming the through holes PH in the conveying sheet BT, the interior of the chamber 29 is no longer partitioned into the upper space H2 and the lower space H1. By allowing gas to flow between the upper space H2 and the lower space H1 via the through holes PH, the pressure difference that occurs between the upper space H2 and the lower space H1 in step S6 can be reduced to a predetermined value or less. For ease of explanation, even after the through holes PH are formed in the conveying sheet BT, the space on the side where the substrate 310 is placed, with the conveying sheet BT as the boundary, will be referred to as the lower space H1. The following explanation will continue with the space on the opposite side of the conveying sheet BT from the lower space H1 as the upper space H2.

[0234] After the sheet punching unit 76 is lowered to pierce the conveying sheet BT with the cutters 129, the rotating shaft 99 is rotated around an axis in the z direction, as shown in Fig. 44. As the rotating shaft 99 rotates, each of the cutters 129 disposed on the tip side of the support arm 127 moves along a circular orbit L1 centered on the rotating shaft 99, cutting the conveying sheet BT.

[0235] As the cutter 129 moves along the circular orbit L1, each of the through holes PH is widened into an arc along the circular orbit L1, as shown in Fig. 45. The rotation angle θ of the rotation shaft 99 in step S5 is set to an angle that allows the process of transporting the sealing body BMF in step S8 to be carried out appropriately. Widening the through holes PH allows more gas to flow between the upper space H2 and the lower space H1, thereby further reducing the pressure difference that occurs between the upper space H2 and the lower space H1 in step S6.

[0236] After the through-holes PH are formed by the lowering and rotation of the sheet punching unit 76, the control unit 33 drives the lifting drive table 97 to raise the sheet punching unit 76 to its initial position. While the sheet punching unit 76 is being raised, the control unit 33 controls the actuator 37 to lower the holding table 309 to its initial position. Once the through-holes PH have been formed at the predetermined positions, the pressure difference adjustment process in step S5 of the fifth embodiment is completed.

[0237] Step S6 (second sealing process) After the sheet punching unit 76 forms through holes PH in the conveying sheet BT, the second sealing process is initiated. In Example 5, the second sealing process corresponds to the second integration process of the present invention. When the second sealing process is initiated, the control unit 33 first closes the electromagnetic valves 103, 105, 107, 110, and 113 shown in FIG. 6 and opens the electromagnetic valves 104 and 114. The control unit 33 then operates the pressurizing device 32 to supply gas Ar to the lower space H1 and the upper space H2, pressurizing the lower space H1 and the upper space H2 to a specific pressure PN. An example of the specific pressure PN is 0.3 MPa to 0.6 MPa. As the pressurizing device 32 performs the pressurizing operation, the air pressure in both the lower space H1 and the upper space H2 becomes higher than atmospheric pressure.

[0238] By pressurizing the upper space H2, as shown in Fig. 46, a pressing force V1 acts from the upper space H2 toward the sealing sheet BS. Note that, since the entire upper space H2 is pressurized, the pressing force V1 acts uniformly over the entire sealing sheet BS. Furthermore, by pressurizing the entire lower space H1, the pressing force V2 acts uniformly from the lower space H1 to the downward surface of the substrate 310. That is, by pressurizing to a specific value PN higher than atmospheric pressure, the pressing forces V1 and V2 act between the sealing sheet BS and the substrate 310.

[0239] Then, by uniformly applying the pressing forces V1 and V2, which are greater than atmospheric pressure, the sealing material BSb of the sealing sheet BS fills the gaps between the LEDs 311. As a result, the adhesion between the sealing sheet BS and the substrate 310 is improved, which prevents the sealing sheet BS from peeling off from the substrate 310 over time. As a result, the substrate 310 and the sealing sheet BS are more closely attached to each other, and the LEDs 311 are sealed by the sealing sheet BS.

[0240] In Example 5, after the through holes PH are formed in the conveying sheet BT in step S5, the lower space H1 and the upper space H2 are pressurized to a specific value PN. Therefore, even if a pressure difference occurs between the air pressure Ph2 in the lower space H1 and the air pressure Ph1 in the upper space H2 due to factors such as the difference in the area of ​​the lower space H1 and the area of ​​the upper space H2, the pressure difference is quickly resolved. In other words, because gas can flow between the lower space H1 and the upper space H2 through the through holes PH, it is possible to prevent imbalances between the air pressures Ph1 and Ph2. Therefore, the pressure difference between the lower space H1 and the upper space H2 is suppressed to a predetermined value or less.

[0241] The magnitude of pressing force V1 depends on atmospheric pressure Ph1, and the magnitude of pressing force V2 depends on atmospheric pressure Ph2. Therefore, by suppressing the difference between atmospheric pressure Ph1 and atmospheric pressure Ph2 to a predetermined value or less, the difference between pressing force V1 acting on wafer W from the upper space H2 side and pressing force V2 acting on wafer W from the lower space H1 side can be suppressed to a predetermined value or less. Therefore, by reducing the pressure difference between the lower space H1 and the upper space H2, it is possible to prevent damage to substrate 310, such as cracks, chips, or distortions, caused by the pressure difference.

[0242] With the lower space H1 and the upper space H2 pressurized to a pressure higher than atmospheric pressure, a pressing force is applied between the sealing sheet BS and the substrate 310 for a predetermined time, and then the control unit 33 stops the pressurizing device 32. Then, the control unit 33 opens the electromagnetic valves 105 and 107 to open the lower space H1 and the upper space H2 to the atmosphere. The control unit 33 raises the upper housing 29B to open the chamber 29, and raises the holding table 309 to bring the back surface of the substrate 310 into contact with the substrate holding surface of the holding table 309.

[0243] Step S7 (Cutting the sheet) While the processes relating to steps S4 to S6 are being performed in the chamber 29, the sheet cutting mechanism 82 is operated to cut the sealing material BP. At this time, as shown in Fig. 47, the cutter 95 cuts the sealing material BP (specifically, the conveying sheet BT) attached to the ring frame f into the shape of the ring frame f, and the pressure roller 96 follows the cutter 95 to press the cut portion of the sheet on the ring frame f while rolling.

[0244] Since the first joining process in step S4 and the second joining process in step S5 are completed when the upper housing 29B is raised, the pinch roller 90 is raised to release the nip of the conveying sheet BT. Thereafter, as shown in Fig. 48, the nip roller 86 is moved to wind up and collect the unnecessary cut conveying sheet BT toward the sheet collection section 374, and a predetermined amount of sealing material BP is fed out from the sheet supply section 371. Through the steps up to step S7, a sealing body BMF is formed in which the ring frame f and the substrate 310 are integrated via the sealing material BP.

[0245] When the unnecessary conveying sheet BT is wound and collected, the nip roller 86 and the joining roller 85 return to their initial positions. Then, while holding the sealing body BMF, the holding table 309 moves from the joining position to the initial position.

[0246] Step S8 (collection of sealed body) When the holding table 309 returns to its initial position, as shown in Fig. 49, the suction pads 28 provided on the frame conveying device 17 suction-hold the sealed body BMF and remove the sealed body BMF from the lower housing 29A. The frame conveying device 17, which has suction-held the sealed body BMF, conveys the sealed body BMF to the sealed body recovery unit 306. The conveyed sealed body BMF is loaded and stored in a cassette 41.

[0247] This completes one cycle of operations for sealing the LEDs 311 mounted on the substrate 310 with the sealing sheet BS. Thereafter, the above process is repeated until the number of sealing bodies BMF reaches a predetermined number.

[0248] <Effects of the configuration of Example 5> According to the device of Example 5, the LEDs 311 mounted on the substrate 310 are sealed with a sealing sheet BS, which is a sheet-like sealing material, by adjusting the air pressure inside the chamber 29. In the device sealing method of Patent Document 1, in which a liquid sealing material is filled around the device and then cured, the flatness of the surface of the sealing material decreases due to factors such as air bubbles being mixed in the uncured resin.

[0249] On the other hand, in the configuration of the present invention, the base material BSa and the sealing material BSb included in the sealing sheet BS are each formed in a flat sheet shape beforehand. Therefore, when sealing with the sealing sheet BS is completed, the flatness of the surface of the sealing sheet S can be improved. Furthermore, since sealing is performed by adjusting the air pressure inside the chamber 29 with the substrate 310 and the sealing sheet BS disposed inside the chamber 29, the differential pressure Fa or the pressing forces V1 and V2 act uniformly over the entire sealing sheet BS. Therefore, it is possible to reliably prevent the occurrence of unevenness on the surface of the sealing sheet BS due to unevenness in the force acting on the sealing sheet BS, and thus the flatness of the sealing sheet BS can be more reliably improved.

[0250] The device sealing apparatus 301 according to the above-described Example 5 can provide the same effects as the adhesive sheet bonding apparatus 1 according to Example 1. By performing the first sealing step, the pressure difference adjusting step, and the second sealing step using the chamber 29, when sealing the sealing sheet BS to the substrate 310 on which the LEDs 311 are mounted, it is possible to improve the adhesion between the sealing sheet BS and the substrate 310 while avoiding a situation in which the substrate 310 is damaged.

[0251] In the first sealing process in step S4, the inside of the lower space H1 in which the substrate 310 is placed is depressurized inside the chamber 29. That is, the space around the sealing sheet BS and the substrate 310 is evacuated by depressurization, so that when the sealing sheet BS comes into contact with and covers the LED 11, it is possible to prevent gas from being trapped between the sealing sheet BS and the LED 311. Therefore, it is possible to avoid a decrease in adhesion caused by the trapped gas.

[0252] In the second sealing process in step S6, the air pressure in the lower space H1 and the upper space H2 is increased to be higher than atmospheric pressure, thereby filling the sealing material BSb of the sealing sheet BS into the gaps between the LEDs 11 with high precision.

[0253] When the differential pressure Fa is generated by reducing the pressure inside the chamber using a vacuum device, the magnitude of the differential pressure Fa generated by reducing the pressure from atmospheric pressure is equal to or less than atmospheric pressure. In other words, when the encapsulating sheet BS is pressed against the LED311 using only the differential pressure Fa, there is an upper limit to the magnitude of the force that presses the encapsulating sheet BS against the LED311. Therefore, as shown in Figure 50(a), when the encapsulating material BSb of the encapsulating sheet BS covers the LED311 due to the differential pressure Fa generated by reducing the pressure, the encapsulating material BSb may not completely fill the space around the LED311, resulting in a gap J.

[0254] In contrast, in the device sealing apparatus 301 according to Example 5, the pressure device 32 is used to pressurize the upper space H2 and the lower space H1 in the chamber 29 to a pressure higher than atmospheric pressure. That is, in the second sealing process, pressing forces V1 and V2 higher than the differential pressure Fa can be applied to the sealing sheet BS and the LED 311. Therefore, as shown in FIG. 50(b), the uncured sealing material BSb is further pressed and deformed by the action of the pressing forces V1 and V2, and the gap J is reliably filled. Therefore, by performing the second sealing process, the LED 311 can be sealed more accurately, and the substrate 310 and the sealing sheet BS can be integrated with each other in a state where the adhesion between the substrate 310 and the sealing sheet BS is further improved.

[0255] Furthermore, in the second sealing process, the magnitudes of the pressing forces V1 and V2 can be adjusted to any value by appropriately controlling the pressure device 32. Therefore, even if various conditions such as the constituent material of the adhesive material BTb or the size of the substrate 310 and the size of the LED 311 are changed, the LED 311 can be reliably sealed by appropriately adjusting the magnitudes of the pressing forces V1 and V2.

[0256] In the device sealing apparatus 1 according to Example 5, the pressure difference adjustment process is performed before the second sealing process, thereby reducing the difference in air pressure generated between the upper space H2 and the lower space H1 in the second bonding process to a predetermined value or less. By performing the pressure difference adjustment process, the adhesion between the sealing sheet BS and the substrate 310 can be improved, and damage such as cracks, chips, or distortion of the substrate 310 can be more reliably prevented.

[0257] Specifically, before the second bonding step, through-holes PH are formed in the sealing member BP using the sheet punching unit 76. By allowing gas to flow between the upper space H2 and the lower space H1 through the through-holes PH, even if a pressure difference occurs between the pressing forces V1 and V2, the pressure difference is quickly eliminated by the flow of gas. Therefore, when the interior of the chamber 29 is pressurized in step S6, the pressure difference between the pressing forces V1 and V2 can be maintained at a predetermined value or less. This allows the high pressing forces V1 and V2 to enhance the adhesion between the sealing sheet BS and the substrate 310, while preventing damage to the substrate 310 or the LEDs 311 due to the pressure difference between the pressing forces V1 and V2. [Example]

[0258] Next, a sixth embodiment of the present invention will be described. In the sixth embodiment, the pressure difference adjusting process according to the second embodiment is performed in the device sealing apparatus 301 according to the fifth embodiment. That is, the configuration of the device sealing apparatus 301 according to the sixth embodiment is a configuration in which the sheet punching unit 76 is omitted from the device sealing apparatus 301 according to the fifth embodiment.

[0259] When the LEDs 311 mounted on the substrate 301 are sealed with the sealing sheet BS using the device sealing apparatus 301 according to the sixth embodiment, the pressure difference occurring between the upper space H2 and the lower space H1 is reduced by the control pattern set by the control unit 33. The control pattern set by the control unit 33 in step S5 according to the sixth embodiment is the same as the control pattern of the second embodiment shown in Fig. 26, and therefore a description thereof will be omitted.

[0260] The operation of the device sealing apparatus 301 according to the sixth embodiment is as follows. In the series of operations according to the sixth embodiment, steps S1 to S4 are the same as those of the fifth embodiment, but steps S5 to S6 are different from those of the fifth embodiment. When the first bonding step according to step S4 is completed, the pressure difference adjustment step according to step S5 is started. That is, the control unit 33 sets a pressurization control pattern for step S6. Specifically, the control unit 33 sets a control pattern in which the upper space H2 and the lower space H1 are pressurized to a pressure higher than atmospheric pressure by executing five pressurization steps R1 to R5, each having a predetermined target value M1 to M5 that increases stepwise.

[0261] Each of the pressurization steps R1 to R5 is a step for increasing the air pressure in the upper space H2 and the lower space H1 to a target value M determined for each pressurization step. When the control unit 33 sets a pressurization control pattern having the pressurization steps R1 to R5, the process of reducing the pressure difference occurring between the upper space H2 and the lower space H1 to a predetermined value or less, i.e., the pressure difference adjustment process, is completed.

[0262] After a pressurization control pattern for the upper space H2 and the lower space H1 using a plurality of pressurization steps R1 to R5 is set, the second sealing process in step S6 is started. The control unit 33 closes electromagnetic valves 103, 105, 107, 110, and 113 shown in FIG. 58 and opens electromagnetic valves 104 and 114. The control unit 33 then operates the pressurizing device 32 to supply gas to the lower space H1 and the upper space H2, gradually pressurizing the lower space H1 and the upper space H2 to a specific value PN according to the pressurization control pattern set in step S5. In Example 6, the air pressure in the lower space H1 and the upper space H2 is increased by 1 atmosphere in each of the five divided pressurization steps R1 to R5.

[0263] In each of the pressurizing steps R1 to R5, when the air pressure of one of the lower space H1 and the upper space H2 reaches the target value M, the control unit 33 controls the pressurizing device 32 to maintain the air pressure of one of the lower space H1 and the upper space H2 at the target value M until the air pressure of the other of the lower space H1 and the upper space H2 reaches the target value M. By sequentially executing the pressurizing steps R1 to R5, the upper space H2 and the lower space H1 are pressurized in stages while maintaining a reduced pressure difference between the upper space H2 and the lower space H1. Because the pressure difference between the upper space H2 and the lower space H1 is reduced, damage to the substrate 310 due to the pressure difference between the upper space H2 and the lower space H1 can be avoided even when the upper space H2 and the lower space H1 are pressurized to a pressure higher than atmospheric pressure.

[0264] After the pressurizing steps R1 to R5 are completed, pressing forces V1 and V2 are applied to the substrate 310 and the sealing member BP for a predetermined time while the substrate 310 and the sealing member BP are pressurized to a specific pressure PN higher than atmospheric pressure, thereby sealing the sealing sheet BS to the substrate 310 and the LEDs 311 in a more intimate contact. After applying pressing forces V1 and V2 for the predetermined time, the control unit 33 stops the pressurizing device 32 and opens the lower space H1 and the upper space H2 to the atmosphere. The control unit 33 then raises the upper housing 29B to open the chamber 29, and raises the holding table 309, thereby completing the process related to step S6. After step S6 is completed, steps S7 and S8 are performed in the same manner as in Example 5 to produce the sealed body BMF.

[0265] As described above, in Example 6, by performing the pressure difference adjustment process and the second sealing process according to Example 2 using the device sealing apparatus 301, advantageous effects similar to those of Example 2 can be achieved in the process of manufacturing a sealed body BMF by sealing the LEDs 311 with the sealing sheet BS. That is, by setting the pressure control pattern set by the control unit 33 to a control pattern that gradually pressurizes the upper space H2 and the lower space H1 through multiple pressure steps R1 to R5, the pressure difference between the upper space H2 and the lower space H1 in the second sealing process can be suppressed to a predetermined value or less. Therefore, even without newly incorporating a mechanical mechanism such as the sheet punching unit 76 into the device sealing apparatus 301, by updating the program of the control unit 33 related to the pressure control pattern, it is possible to improve the adhesion between the substrate 310 and the sealing sheet BS while avoiding damage to the substrate 310. [Example]

[0266] Next, a seventh embodiment of the present invention will be described. In the seventh embodiment, the pressure difference adjusting process according to the third embodiment is performed in the device sealing apparatus 301 according to the fifth embodiment. That is, the configuration of the device sealing apparatus 301 according to the seventh embodiment is such that the chamber 29 shown in Fig. 27 is provided in the device sealing apparatus 301 according to the fifth embodiment.

[0267] That is, in the device sealing apparatus 301 according to the seventh embodiment, the electromagnetic valve 104 disposed in the flow path 204 is provided with an aperture adjustment valve 115, and the electromagnetic valve 114 disposed in the flow path 203 is provided with an aperture adjustment valve 116. That is, in the seventh embodiment, similarly to the third embodiment, the control unit 33 independently controls the aperture of the electromagnetic valve 114 and the aperture of the electromagnetic valve 104, thereby independently controlling the rate at which the air pressure in the upper space H2 increases and the rate at which the air pressure in the lower space H1 increases in step S6.

[0268] <Operation in Example 7> Here, the operation of the device sealing apparatus 301 according to the seventh embodiment will be described. The flowchart according to the seventh embodiment is common to the flowchart according to the fifth embodiment shown in Fig. 37. The explanation of the same steps as those in the operation of the device sealing apparatus 301 according to the fifth embodiment will be simplified, and steps S5 and S6, which are different steps, will be described in detail.

[0269] Step S5 (pressure difference adjustment process) In the seventh embodiment, once the first sealing process in step S4 is completed, a process for reducing the pressure difference between the upper space H2 and the lower space H1 to a predetermined value or less is initiated. That is, the control unit 33 independently controls the aperture of the electromagnetic valve 114 provided in the flow path 203 for pressurizing the lower space and the aperture of the electromagnetic valve 104 provided in the flow path 204 for pressurizing the upper space. At this time, the aperture of the electromagnetic valve 114 and the aperture of the electromagnetic valve 104 are controlled so that the rate at which the air pressure in the upper space H2 increases is equal to the rate at which the air pressure in the lower space H1 increases. For example, if the volume of the upper space H2 is smaller than the volume of the lower space H1, the aperture of the electromagnetic valve 114 is set larger than the aperture of the electromagnetic valve 104. The control unit 33 adjusts the apertures of the electromagnetic valves 114 and 104, thereby completing the pressure difference adjustment process.

[0270] Step S6 (second attachment process) After the control unit 33 adjusts the opening degrees of the electromagnetic valves 114 and 134, the second bonding process is started. That is, as shown in Figure 28, while the opening degree of the electromagnetic valve 114 is controlled to be larger than the opening degree of the electromagnetic valve 104, the control unit 33 operates the pressurizing device 32 to supply gas to each of the upper space H2 and the lower space H1. By supplying gas to each of the upper space H2 and the lower space H1, the control unit 33 increases the pressure in the upper space H2 and the lower space H1 to a pressure higher than atmospheric pressure.

[0271] In the seventh embodiment, the pressure device 32 is operated under the condition that the opening of the electromagnetic valve 114 is controlled to be larger than the opening of the electromagnetic valve 104, so that the rate of increase of the atmospheric pressure Ph2 is equal to the rate of increase of the atmospheric pressure Ph1 (see FIG. 29). That is, as in the third embodiment, the rate of increase of Ph2 is increased from the rate indicated by the two-dot chain line in FIG. 29 to the rate indicated by the solid line. As a result, the difference between the atmospheric pressures Ph1 and Ph2 is suppressed to a predetermined value or less. That is, the difference between the pressing force V1 acting on the substrate 310 from the side of the upper space H2 and the pressing force V2 acting on the substrate 310 from the side of the lower space H1 is suppressed to a predetermined value or less, so that damage to the substrate 310 or the LED 311 can be avoided in step S6.

[0272] By applying pressure forces V1 and V2 to the wafer W for a predetermined period of time while pressurizing it to a specific value PN higher than atmospheric pressure, the sealing sheet BS is sealed tighter against the substrate 310 and the LED 311, and the space around the LED 311 is filled with the sealing material BSb.

[0273] After applying the pressing forces V1 and V2 for a predetermined time, the control unit 33 stops the pressure device 32. Then, the control unit 33 opens the electromagnetic valves 105 and 107 to open the lower space H1 and the upper space H2 to the atmosphere. The control unit 33 raises the upper housing 29B to open the chamber 29, and raises the holding table 309 to bring the backside of the substrate 310 into contact with the substrate holding surface of the holding table 309, thereby completing the process related to step S6. After the completion of step S6, steps S7 and S8 are performed in the same manner as in Example 3, thereby forming the sealed body BMF.

[0274] In the same manner as in the third embodiment, the seventh embodiment is configured to independently control the pressure in the upper space H2 and the lower space H1 by providing the opening adjustment valves 115 and 116. By independently controlling the pressure in the upper space H2 and the lower space H1, the pressure difference between the upper space H2 and the lower space H1 that occurs in step S6 is suppressed to a predetermined value or less. In the third embodiment, the sheet perforation unit 76 is not required, and therefore it is not necessary to consider the position and area for forming the through-hole PH in the sealing member BP.

[0275] Furthermore, by equalizing the rate of increase in the air pressure in the upper space H2 and the rate of increase in the air pressure in the lower space H1, it is possible to avoid the need to wait for the air pressure in one of the upper space H2 and the lower space H1 to reach the specific value PN after the other air pressure reaches the specific value PN. As shown in Figure 29, by increasing the rate of increase in the air pressure Ph2 in the lower space H1 to be equal to the rate of increase in the air pressure Ph1 in the upper space H2, the time at which the air pressure Ph2 reaches the specific value PN is advanced from tb to ta. As a result, the time at which both the upper space H2 and the lower space H1 reach the specific value PN can be advanced, thereby shortening the time required for the process of step S6. [Example]

[0276] Next, an eighth embodiment of the present invention will be described. The device sealing apparatus 301 according to the eighth embodiment performs the pressure difference adjusting process according to the fourth embodiment in the device sealing apparatus 31 according to the fifth embodiment. That is, the configuration of the device sealing apparatus 301 according to the eighth embodiment is such that the chamber 29 shown in Fig. 30 is provided in the device sealing apparatus 301 according to the fifth embodiment.

[0277] In the device sealing apparatus 301 according to the eighth embodiment, the chamber 29 includes a flow path 135 that connects the lower housing 29A and the upper housing 29B in communication with each other. The flow path 135 includes an electromagnetic valve 137, and the opening and closing operation of the electromagnetic valve 137 is controlled by the control unit 33. When the electromagnetic valve 137 is opened, gas can flow between the upper space H2 and the lower space H1. When the electromagnetic valve 137 is opened, the flow path 135 functions as an air hole that allows gas to flow between the upper space H2 and the lower space H1.

[0278] <Operation in Example 8> Here, the operation of the device sealing apparatus 301 according to the eighth embodiment will be described. The outline of the flowchart according to the eighth embodiment is common to the flowchart according to the fifth embodiment shown in Fig. 37. The explanation of the same steps as those in the operation of the device sealing apparatus 301 according to the fifth embodiment will be simplified, and steps S5 and S6, which are different steps, will be described in detail.

[0279] Step S5 (pressure difference adjustment process) In the eighth embodiment, when the first sealing process in step S4 is completed, a process for allowing gas to flow between the upper space H2 and the lower space H1 is performed as a pressure difference adjustment process. That is, when step S5 starts, the control unit 33 performs control to open the electromagnetic valve 137. By opening the electromagnetic valve 137, gas can flow between the upper space H2 and the lower space H1 via the flow path 135. When the control unit 33 opens the electromagnetic valve 137, the pressure difference adjustment process is completed.

[0280] Step S6 (second attachment process) The second bonding process is started after the control unit 33 opens the electromagnetic valve 137. First, the control unit 33 closes the electromagnetic valves 103, 105, 107, 110, and 113 shown in Fig. 6, and opens the electromagnetic valves 104 and 114. Then, while maintaining the electromagnetic valve 137 open, the control unit 33 operates the pressurizing device 32 to supply gas to the lower space H1 and the upper space H2, thereby pressurizing the lower space H1 and the upper space H2 to a specific value PN.

[0281] By pressurizing the upper space H2, a pressing force V1 acts from the upper space H2 toward the adhesive tape DT and the front side of the wafer W, and a pressing force V2 acts from the lower space H1 toward the back side of the substrate 310 (see FIG. 46). The application of the pressing forces V1 and V2, which are pressures higher than atmospheric pressure, enhances the adhesion between the substrate 310 on which the LEDs 311 are mounted and the sealing sheet BS.

[0282] In the eighth embodiment, as in the fourth embodiment, in step S5, the lower space H1 and the upper space H2 are pressurized to a specific value PN higher than atmospheric pressure with the electromagnetic valve 137 open. Therefore, even if a pressure difference occurs between the air pressure Ph2 in the lower space H1 and the air pressure Ph1 in the upper space H2, the pressure difference is quickly eliminated by the flow of gas between the lower space H1 and the upper space H2 via the flow path 135. Therefore, the lower space H1 and the upper space H2 can be pressurized to a specific value PN higher than atmospheric pressure with the pressure difference between the lower space H1 and the upper space H2 kept below a predetermined value.

[0283] After applying the pressing forces V1 and V2 for a predetermined time, the control unit 33 stops the pressure device 32. Then, the control unit 33 opens the electromagnetic valves 105 and 107 to open the lower space H1 and the upper space H2 to the atmosphere. The control unit 33 raises the upper housing 29B to open the chamber 29, and raises the holding table 309 to abut against the substrate 310, thereby completing the process related to step S6. After step S6 is completed, steps S7 and S8 are performed in the same manner as in Example 4, thereby producing the sealed body BMF.

[0284] In Example 8, the gas can flow between the upper space H2 and the lower space H1 by providing the flow path 135 and the electromagnetic valve 137. Then, by pressurizing the upper space H2 and the lower space H1 to a pressure higher than atmospheric pressure with the electromagnetic valve 137 open, the pressure difference between the upper space H2 and the lower space H1 that occurs in step S6 can be suppressed to a predetermined value or less. In Example 4, the gas can flow between the upper space H2 and the lower space H1 without forming the through-holes PH in the sealing member BP, so the sheet perforation unit 76 can be omitted.

[0285] <Other embodiments> It should be noted that the embodiments disclosed herein are illustrative in all respects and are not limiting. The scope of the present invention is defined by the claims rather than the above description of the embodiments, and includes all modifications (variations) within the meaning and scope of the claims. For example, the present invention can be modified as follows:

[0286] (1) In step S4 in each embodiment, the air pressure in the upper space H2 and the lower space H1 is adjusted to 10 Pa, and then the air pressure in the upper space H2 is adjusted from 10 Pa to 100 Pa to generate the pressure difference Fa. However, this is not limited to this. That is, the air pressures in the upper space H2 and the lower space H1 in step S4 may be changed as appropriate as long as the air pressure in the upper space H2 is adjusted to be higher than the air pressure in the lower space H1. As an example, the air pressure in the lower space H1 and the upper space H2 may be reduced to a predetermined value, and then the air pressure in the upper space H2 may be returned to atmospheric pressure to generate the pressure difference Fa. In a configuration in which the air pressure in the upper space H2 is returned to atmospheric pressure to generate the pressure difference Fa, the pressure difference Fa can be made larger, and therefore the process of deforming the adhesive tape DT to cover the annular convex portion-forming surface of the wafer W with the adhesive tape DT can be completed more quickly.

[0287] (2) In step S6 in each embodiment, the pressurizing device 32 pressurizes the interior of both the lower space H1 and the upper space H2, but this is not limited to this. That is, the pressurizing device 32 may pressurize only the upper space H2 to a pressure higher than atmospheric pressure, and the adhesive tape DT may be attached more accurately by the pressing force V1.

[0288] As a further modified example of the configuration in which only the upper space H2 is pressurized, the adhesive tape DT may be adhered by pressurizing the interior of the upper space H2 to a pressure higher than atmospheric pressure while maintaining the interior of the lower space H1 in a reduced pressure state lower than atmospheric pressure. In this configuration, after the first adhering process using the differential pressure Fa is performed in step S4, the electromagnetic valve 105 connected to the upper space H2 is opened to expose only the upper space H2 to the atmosphere while maintaining the air pressure in the lower space H1 reduced to a predetermined value. Then, in step S5, the pressurizing device 32 is operated to pressurize the interior of the upper space H2 so that the pressure is higher than atmospheric pressure.

[0289] In this modified example, in step S5, the holding table 9 is raised to abut the rear surface of the wafer W, and the inside of the upper space H2 is pressurized to perform the second bonding process. By pressurizing the upper space H2 to generate the pressing force V1 while the wafer W is held by the holding table 9, the pressing force V1 can be applied evenly over the entire surfaces of the adhesive tape DT and the wafer W even when the pressure in the lower space H1 is reduced below atmospheric pressure.

[0290] (3) In step S4 in each embodiment, the vacuum device 31 is used to generate a differential pressure Fa inside the chamber 29, thereby deforming the adhesive tape DT into a convex shape and bringing it into contact with the annular convex portion-forming surface of the wafer W. However, the method for deforming the adhesive tape DT into a convex shape is not limited to the configuration that generates the differential pressure Fa. That is, as shown in Fig. 51, a configuration in which a pressing member 141 is provided inside the upper housing 29B may also be used.

[0291] The pressing member 141 has a convex bottom surface (for example, hemispherical) and is disposed so as to be located above the adhesive tape DT. Therefore, by lowering the pressing member 141, the convex bottom surface of the pressing member 141 presses the adhesive tape DT, and the adhesive tape DT deforms into a convex shape and can come into contact with the wafer W. In this case, the configuration necessary for generating the differential pressure Fa can be omitted. Another configuration for deforming the adhesive tape DT into a convex shape is a configuration in which the adhesive tape DT is pressed from above using a roller or the like.

[0292] (4) In each embodiment, a configuration in which a supporting adhesive tape DT is attached to the wafer W has been described as an example, but the adhesive sheet attached to the wafer W is not limited to this. The configuration according to each embodiment can be applied as long as it is a configuration in which a sheet-like adhesive material, such as an adhesive tape for circuit protection, is attached.

[0293] (5) In Examples 1 to 4, the wafer W and the ring frame f are exemplified as workpieces to which the adhesive sheet is attached, but the workpiece is not limited to this. As an example, the ring frame f may be omitted, and the adhesive sheet (adhesive tape DT) may be attached only to the wafer W. When the ring frame f is omitted, the wafer W to which the adhesive tape DT is tightly attached after the second attaching step is completed corresponds to the semiconductor product of the present invention. Also, in Examples 5 to 8, the ring frame f may be omitted, and the sealing member BP may be attached only to the substrate 310. When the ring frame f is omitted, the substrate 310 to which the sealing sheet BS is tightly attached after the second sealing step is completed corresponds to the semiconductor product of the present invention.

[0294] (6) In each embodiment, various semiconductor materials such as wafers, substrates, panels, etc. may be used as the workpiece. Furthermore, the shape of the workpiece may be circular, rectangular, polygonal, or approximately circular.

[0295] (7) In each embodiment, the holding table 9 or the holding table 309 is raised and lowered at a predetermined timing to integrate the workpiece and the sheet material, but the raising and lowering of the holding table 9 or the holding table 309 may be changed as appropriate. As an example, the pressure treatment in step S6 is not limited to being performed after the holding table 9 is lowered, and the pressure treatment may be performed while the holding table 9 is maintained in the raised state.

[0296] (8) In each embodiment, the frame holding part 38 is disposed outside the lower housing 29A, but the frame holding part 38 may be disposed inside the lower housing 29A. In this case, the processes from step S4 onwards are carried out with the ring frame f and the wafer W housed inside the chamber 29.

[0297] (9) In each embodiment, the chamber 29 may include a sheet-like elastic body Gs, as shown in Fig. 52(a). This modification will be described below using the configuration of the sixth embodiment as an example.

[0298] The elastic body Gs is disposed inside the upper housing 29B and is configured to contact the inner diameter of the upper housing 29B. The lower surface of the elastic body Gs is also configured to be flush with the cylindrical bottom of the upper housing 29B. Therefore, when the lower housing 29A and the upper housing 29B sandwich the conveying sheet P to form the chamber 29, the elastic body Gs contacts the conveying sheet P. Specifically, the elastic body Gs contacts the side of the conveying sheet P opposite to the side that holds the adhesive tape DT (the upper side in the figure). By disposing the elastic body Gs so that it contacts the inner diameter of the lower housing 29A, the elastic body Gs is not sandwiched when the chamber 29 is formed, and therefore, the sealing ability of the chamber 29 is prevented from being reduced by the elastic body Gs. Examples of materials that can be used to form the elastic body Gs include rubber, elastomer, and gel-like polymer materials.

[0299] By providing the chamber 29 with the elastic body Gs, the bending rate of the sealing member BP can be made more uniform when the sealing member BP is deformed into a convex shape in step S4. Here, the effect of the configuration including the elastic body Gs will be described. As an example, when the sealing sheet BS is made of a relatively hard material, the bending rate of the sealing member BP is likely to be non-uniform, as shown in Figure 52(b).

[0300] That is, in the region P1 of the conveying sheet BT where the sealing sheet BS is held by the conveying sheet BT, the hard sealing sheet BS is present, so the bending rate of the conveying sheet BT due to the differential pressure Fa is small. On the other hand, in the region P2 of the conveying sheet BT where the sealing sheet BS is not held by the conveying sheet BT, the bending rate of the conveying sheet BT due to the differential pressure Fa is relatively large. That is, the region P2 is more easily deformed by the differential pressure Fa, and the bending rate of the conveying sheet BT in the region P1 is further reduced.

[0301] Furthermore, the flexural modulus of the sealing sheet BS is large on the side closer to the region P2, and is small in the central portion of the sealing sheet BS. Thus, the flexural modulus due to the differential pressure Fa becomes non-uniform in each of the sealing sheet BS and the conveying sheet BT. As a result, when the sealing sheet BS is attached to the substrate 310, the adhesion between the sealing sheet BS and the substrate 310 decreases.

[0302] On the other hand, when the elastic body Gs is provided, the entire elastic body Gs is uniformly deformed into a convex shape by the differential pressure Fa, as shown in Fig. 52(c). Therefore, the bending rate of the conveying sheet BT in the region P1 is improved and the difference with the bending rate in the region P2 is reduced, so that the bending rates of the conveying sheet BT and the sealing sheet BS become uniform overall. In other words, the sealing sheet BS becomes more likely to deform according to the shape of the device formation surface of the substrate 310, and therefore the adhesion between the sealing sheet BS and the substrate 310 can be further improved.

[0303] (10) Each embodiment may further include a configuration for heating the adhesive tape DT or the sealing member BP. As an example of a configuration for heating the adhesive tape DT or the like, the sheet joining mechanism 81 has a heating mechanism 120 inside the upper housing 29B, as shown in Fig. 53(a). Fig. 53(a) shows a configuration in which the heating mechanism 120 is added to the configuration of Example 2 as an example of this modification.

[0304] The heating mechanism 120 includes a cylinder 121 and a heating member 123. The cylinder 121 is connected to the upper part of the heating member 123, and the operation of the cylinder 121 allows the heating member 123 to move up and down inside the chamber 29. Note that the heating member 123 does not need to be configured to be movable up and down as long as it is capable of heating the adhesive tape DT.

[0305] A heater 125 for heating the adhesive tape DT is embedded inside the heating member 123. The heating temperature by the heater 125 is adjusted to a temperature at which the adhesive tape DT becomes soft. An example of the heating temperature is about 50°C to 70°C. The shape of the bottom surface of the heating member 123 may be changed depending on the shape of the wafer W. As an example, the heating member 123 is cylindrical overall.

[0306] It is preferable to heat the upper space H2 in advance using the heating mechanism 120 before starting step S4. That is, the control unit 33 operates the heater 125 to heat the heating device 123 to a predetermined temperature. When the heating device 123 is heated, the upper space H2 is heated by the heat conduction effect, and the adhesive tape DT is also heated.

[0307] The adhesive tape DT becomes soft when heated, and therefore the deformability of the adhesive tape DT due to the differential pressure Fa is improved. That is, when the adhesive tape DT is to cover the wafer W, the ability of the adhesive tape DT to follow the wafer W can be further improved. Note that, as shown in Fig. 53(b), the heating member 123 may be lowered so as to be close to or in contact with the adhesive tape DT, and the adhesive tape DT may be directly heated by the heating member 123.

[0308] The heating mechanism 120 is disposed on the side of the upper space H2 in the chamber 29, and is not limited to a configuration in which it heats the upper space H2. That is, the heating mechanism 120 may be configured to heat the lower space H1. As an example, a configuration in which the heater 125 is disposed inside the holding table 9 and the heater 125 heats the lower space H1, thereby heating the adhesive tape DT, may be mentioned. Furthermore, the heating mechanism 120 may be configured to heat both the upper space H2 and the lower space H1.

[0309] (11) As the workpiece according to Examples 5 to 8, the description has been given using a substrate 310 having an LED 311 mounted on the front side and a flat back side. However, the back side of the workpiece is not limited to being flat. That is, as shown in FIG. 54(a), a substrate 331 having an LED 311 mounted on the front side and a convex member 330 on the back side may be used as the workpiece. The convex member 330 may be an electronic component such as an LED, or may be a constituent material of the substrate 331. That is, the substrate 331 having irregularities on the back side also includes a configuration in which irregularities are formed on the back side of the substrate 331 itself.

[0310] When an LED 311 mounted on the front side of a substrate 331 having a convex member 330 on the back side is sealed with a sealing sheet S, the device sealing apparatus 301 is provided with a holding table 335 as shown in Figure 54(b) instead of the holding table 309.

[0311] Holding table 335 has annular protrusions 337 on its outer periphery and a recess 339 in its center. That is, holding table 335 is hollow as a whole. In plan view, recess 339 is formed at a position that encompasses the area of ​​substrate 331 where convex member 330 is arranged. Protrusions 337 support the portion of the back surface of substrate 331 where convex member 330 is not arranged, so that holding table 335 can hold substrate 331 without coming into contact with convex member 330.

[0312] 55 shows a state in which the lower housing 29A includes the holding table 335 and the holding table 335 supports the substrate 331. This state corresponds to the process of forming the chamber 29 in step S3. In the configuration including the holding table 335, the processes of sealing the LEDs 311 on the substrate 310 with the sealing sheet BS are the same as those in the embodiments already described, and therefore detailed description thereof will be omitted.

[0313] (13) In Examples 5 to 8, the LED 311 has been described as an example of a device to be sealed with the sealing sheet BS, but the device is not limited to this. Other examples of devices include optical elements such as the LED 311, as well as semiconductor elements and electronic components.

[0314] (14) In Examples 5 to 8, after the LED 311 is sealed with the sealing sheet BS, a step of curing the sealing material BSb of the sealing sheet BS may be performed. The step of curing the sealing material BSb can be appropriately changed depending on the material of the sealing material BSb, and examples include curing by heat treatment or ultraviolet treatment.

[0315] (15) In Examples 5 to 8, OCA is used as the encapsulant BSb, but this is not limiting. In other words, the encapsulant Sb may be an optically transparent material, an optically opaque material, or a colorless or colored material.

[0316] (16) In each of the embodiments and modifications, the first bonding process or the first sealing process is not limited to being performed inside the chamber 29. That is, a process of attaching the sheet material to the work by bringing the sheet material into contact with the work in advance may be performed outside the chamber 29. Hereinafter, the modifications will be described using as an example a configuration in which the first sealing process is performed outside the chamber 29 in the device sealing apparatus 301.

[0317] In a modification in which the first sealing step is performed outside the chamber 29, the device sealing apparatus 301 is provided with a lifting table 338 outside the chamber 29. As an example, the lifting table 338 is disposed in the rectangular portion 301a, and the aligner 7, the lifting table 338, the holding table 309, and the frame supply unit 12 are arranged in this order from the right on the upper side of the rectangular portion 1a.

[0318] The lifting table 338 is configured to be able to move back and forth between an initial position and a sealing position along rails 54 provided in the front-rear direction (y direction). The initial position is located inside the rectangular portion 1a, and the substrate 310 is placed on the lifting table 338 at this initial position. The sealing position is located inside the protruding portion 301b, and by moving the lifting table 338 to the sealing position, the substrate 310 placed on the lifting table 338 can be brought into contact with the sealing member BP.

[0319] The lift table 338 holds the substrate 310, and is, for example, a metal chuck table having the same shape and size as the substrate 310 or larger. A preferred configuration of the lift table 338 is one in which the substrate 310 is held by suction using a suction device provided inside. As shown in Figures 56 and 57, the lift table 338 is connected to one end of a rod 352 that passes through a support base 351 that supports the lift table 338. The other end of the rod 352 is connected to and driven by an actuator 353 that includes a motor or the like. The rod 352 and the actuator 353 enable the lift table 338 to move up and down.

[0320] <Operation in Modified Example> Here, the operation of the device sealing apparatus 301 according to the modified example will be described. The outline of the flowchart according to the modified example is the same as the flowchart according to the fifth embodiment shown in Fig. 37. The explanation of the same steps as those in the operation of the device sealing apparatus 301 according to the fifth embodiment will be simplified, and steps S1 to S4, which are different steps, will be described in detail.

[0321] Step S1 (supply of workpiece) When a sealing command is issued, the ring frame f is transported from the frame supply unit 12 to the frame holding unit 38 of the lower housing 29A, and the substrate 310 is transported from the container 305 to the lift table 338. When the frame holding unit 38 holds the ring frame f, the lower housing 29A, together with the holding table 309, moves along the rails 40 from the initial position to the sealing position on the device sealing mechanism 81 side.

[0322] While the frame transport device 17 transports the ring frame f, the substrate transport device 316 uses the holding arm 23 to suck and hold the substrate 310, transport it out, and transport it to the aligner 7. The aligner 7 holds the substrate 310 with a suction pad and rotates it, aligning it based on the notch, etc. Once alignment is complete, the substrate transport device 316 removes the substrate 310 from the aligner 7 and places it on the lift table 338. Once the lift table 8 sucks and holds the substrate 310, the lift table 338 moves along the rails 54 from its initial position to a sealing position on the device sealing mechanism 381 side. Figure 56 shows the lift table 338 and the holding table 309 each moved to the sealing position.

[0323] Step S2 (supply of encapsulating sheet) When the workpiece is supplied by the substrate conveying device 316 or the like, the sealing unit 313 supplies a sealing sheet BS. That is, a predetermined amount of sealing material BP is fed from the sheet supply unit 371 while the separator S is peeled off. The sealing material BP, which is long overall, is guided above the sealing position along a predetermined conveying path. At this time, as shown in FIG. 56 , the sealing sheet BS held by the conveying sheet BT is positioned so as to be located above the substrate 310 placed on the lifting table 338.

[0324] Step S3 (first sealing process) When the workpiece and the sealing sheet BS are supplied, the first sealing process is started. That is, the control unit 33 drives the actuator 353 to raise the lift table 338. As the lift table 338 rises, the upper surface of the LED 311 mounted on the substrate 310 comes into contact with the sealing sheet BS, as shown in FIG. 57. This contact causes the sealing sheet BS to adhere to the substrate 310, and the two become integrated.

[0325] This contact causes the LEDs 311 to adhere to the adhesive sealing layer BSb, and the substrate 310 is held by the sealing sheet BS via the LEDs 311. The substrate 10 and the sealing member BP integrated via the sealing sheet BS will hereinafter be referred to as the sealing material composite BM. After the sealing material composite BM is formed, the sealing member BP is fed out by a predetermined amount, and the sealing material composite BM is transported above the holding table 309. As the sealing material composite BM is transported, the lifting table 338 descends and returns to its initial state. The first sealing process in step S3 is completed when the sealing material composite BM is formed and transported to the holding table 309.

[0326] Step S4 (Formation of chamber) When the sealing material complex M is conveyed above the holding table 309, the joining roller 85 descends and rolls over the conveying sheet BT, joining the conveying sheet BT across the ring frame f and the top of the lower housing 29A.

[0327] Once the conveying sheet BT has been attached to the ring frame f, the joining roller 85 is returned to its initial position, and the upper housing 29B is lowered. As the upper housing 29B is lowered, the portion of the conveying sheet T attached to the top of the lower housing 29A is sandwiched between the upper housing 29B and the lower housing 29A, forming the chamber 29. Thereafter, steps S5 to S8 are carried out in the same manner as in Examples 5 to 8, to form the sealed body BMF.

[0328] In the second sealing process, the sealing sheet BS that was attached to the substrate 310 in the first sealing process becomes more closely adhered to the substrate 310. In the second sealing process, a pressure higher than atmospheric pressure acts between the substrate 310 and the sealing sheet BS, thereby increasing the adhesion between the substrate 310 and the sealing sheet BS, and the LEDs 311 mounted on the substrate 310 are firmly sealed by the sealing sheet BS.

[0329] (17) In the first to fourth embodiments, the long adhesive tape DT is attached to the back surface of the wafer W and the ring frame f, and then cut into a predetermined shape corresponding to the shape of the workpiece (here, the shape of the wafer W or the ring frame f), but this is not limiting. That is, an adhesive tape having a predetermined shape corresponding to the shape of the workpiece in advance may be attached to the workpiece.

[0330] The configuration of the adhesive tape DT in this modified example is the same as the configuration of the sealing member BP shown in Fig. 31(a). That is, adhesive tape DT of a predetermined shape is attached and held at a predetermined pitch on one surface of a long conveying sheet BT. The adhesive tape DT is pre-cut into a predetermined shape corresponding to the shape of the surface of the wafer W on which the annular convex portion Ka is formed (the back surface in this embodiment). In this modified example, in step S3, the conveying sheet BT is sandwiched between the upper housing 29B and the lower housing 29A to form the chamber 29.

[0331] (18) In Example 1 or Example 5, the sheet punching unit 76 is configured to form the arc-shaped through holes PH by vertical movement and rotational movement, but the operation of the sheet punching unit 76 may be changed as appropriate as long as the through holes PH are formed. As an example, the sheet punching unit 76 may form the through holes PH by vertical movement only. Specifically, the sheet punching unit 76 descends to cause the cutter 129 to pierce the adhesive tape DT and form the through holes PH, and then the sheet punching unit 76 is raised and returned to its initial position.

[0332] (19) In Example 1 or Example 5, the sheet punching unit 76 is not limited to a configuration in which the through holes PH are formed using the cutter 129 having a cutting blade, and may include a needle-shaped member or a cone-shaped member instead of the cutter 129. In this case, the through holes PH are formed by piercing the adhesive tape DT with the tip of the needle-shaped member or the cone-shaped member. [Explanation of symbols]

[0333] 1...Adhesive sheet application device 3...Wafer transport mechanism 5 … Container 6... Frame recovery section 7...Alaina 9... Holding table 12... Frame supply section 13... Pasting unit 16 ... Wafer transport device 17... Frame transport device 23... Holding arm 31 … Vacuum equipment 32...Pressure device 33 ... Control section 38... Frame holder 71 ... Sheet supply unit 72 ... Separator recovery section 73 ... Sheet attachment section 74 ... Sheet collection section 76 ... Sheet perforation section 81 ... Sheet pasting mechanism 82 ... Sheet cutting mechanism 85 ... Laminating roller 86... Nip roller 95 ... cutter 97 ... Lifting drive base 99 ... Rotating shaft 101 ... flow path 102 ... flow path 103...Solenoid valve 104...Solenoid valve 120…Heating mechanism 127 ... Support arm 128 ... Cutter holder 129 ... cutter 131 ... flow path 132 ... Electromagnetic valve 133 ... flow path 134...Solenoid valve 135 ... flow path 137...Solenoid valve 141 ... Pressing member 301 ... Device sealing equipment 309 ... Holding table 310... Substrate 311...LED f... Ring frame DT... adhesive tape MF...Mounting frame BT...Transport sheet BS: Encapsulating sheet BP … Sealing member BMF … Encapsulation body PH … Through hole Ka... Annular convex part Kf … Inner corner He... Flat concave

Claims

1. A method for integrating a workpiece and a sheet material in an internal space of a chamber having an upper chamber and a lower chamber, comprising: a step of forming upper and lower spaces by sandwiching the sheet material between the upper chamber and the lower chamber to divide the internal space of the chamber into a lower space in which the workpiece is placed and an upper space facing the lower space with the sheet material interposed therebetween; a first integration process in which the pressure inside the chamber is reduced so that the pressure in the lower space is lower than the pressure in the upper space, and the sheet material is brought into contact with the workpiece by a pressure difference formed between the upper space and the lower space in the chamber, thereby adhering the sheet material to the workpiece; a pressure difference adjusting step of adjusting a pressure difference between the upper space and the lower space in the chamber after the first integration step; a second integration process in which the pressure in the internal space of the chamber is increased to a pressure equal to or higher than atmospheric pressure while maintaining the adjusted pressure difference, thereby adhering the sheet material to the workpiece; A method for integrating a workpiece and a sheet material, comprising:

2. 2. The method for integrating a workpiece and a sheet material according to claim 1, The pressure difference adjusting process includes: By forming a through hole in the sheet material, the upper space and the lower space are communicated via the through hole. A method for integrating a workpiece and a sheet material, comprising:

3. 2. The method for integrating a workpiece and a sheet material according to claim 1, The pressure difference adjusting process includes: The pressure difference is maintained by controlling the pressure of at least one of the upper space and the lower space to increase in stages. A method for integrating a workpiece and a sheet material, comprising:

4. 2. The method for integrating a workpiece and a sheet material according to claim 1, The chamber comprises: a first pressure change mechanism for adjusting the pressure in the upper space; a second pressure change mechanism for adjusting the pressure in the lower space; a control unit that independently controls the first transformer mechanism and the second transformer mechanism; Equipped with The pressure difference adjusting process includes: The control unit independently controls the first pressure transformation mechanism and the second pressure transformation mechanism, thereby increasing the pressure in the upper space and the lower space while maintaining the pressure difference. A method for integrating a workpiece and a sheet material, comprising:

5. 5. The method for integrating a workpiece and a sheet material according to claim 1, In the first integration step, the sheet material is deformed into a convex shape toward the workpiece, thereby bringing the sheet material into contact with the workpiece. A method for integrating a workpiece and a sheet material, comprising:

6. 6. The method for integrating a workpiece and a sheet material according to claim 1, The sheet material has a predetermined shape corresponding to the workpiece. A method for integrating a workpiece and a sheet material, comprising:

7. 7. The method for integrating a workpiece and a sheet material according to claim 1, The sheet material is held by a long conveying sheet, a sheet-like elastic body disposed inside the upper chamber; In the process of forming the upper and lower spaces, the conveying sheet is sandwiched between the upper chamber and the lower chamber, and the sheet-like elastic body is disposed so that the sheet-like elastic body abuts against the surface of the conveying sheet that does not hold the sheet material. A method for integrating a workpiece and a sheet material, comprising:

8. 8. The method for integrating a workpiece and a sheet material according to claim 1, The workpiece has an annular protrusion on the outer periphery of one surface, The sheet material is brought into close contact with the surface of the workpiece on which the annular protrusion is formed. A method for integrating a workpiece and a sheet material, comprising:

9. 9. The method for integrating a workpiece and a sheet material according to claim 1, the workpiece is a substrate on which an optical element is mounted, The sheet material is brought into close contact with the surface of the workpiece on which the optical element is mounted. A method for integrating a workpiece and a sheet material, comprising:

10. An apparatus for integrating a workpiece and a sheet material, which integrates the workpiece and the sheet material in an internal space of a chamber having an upper chamber and a lower chamber, a holding table for holding the workpiece; a chamber that houses the holding table and is formed by sandwiching the sheet material between the upper chamber and the lower chamber, and is partitioned into an upper space and a lower space via the sheet material; a supply mechanism for supplying the sheet material; a first integration mechanism that reduces the pressure inside the chamber so that the pressure in the lower space is lower than the pressure in the upper space, and adheres the sheet material to the workpiece by bringing the sheet material into contact with the workpiece using a pressure difference formed between the upper space and the lower space inside the chamber; a differential pressure adjustment mechanism that adjusts the pressure difference between the upper space and the lower space in the chamber after the sheet material has adhered to the workpiece; a second integration mechanism that brings the sheet material into close contact with the workpiece by increasing the pressure in the internal space of the chamber to a pressure equal to or higher than atmospheric pressure while maintaining the pressure difference adjusted; An apparatus for integrating a workpiece and a sheet material, comprising:

11. A method for manufacturing a semiconductor product, in which a workpiece and a sheet material are integrated in an internal space of a chamber having an upper chamber and a lower chamber, to manufacture the semiconductor product, a step of forming upper and lower spaces by sandwiching the sheet material between the upper chamber and the lower chamber to divide the internal space of the chamber into a lower space in which the workpiece is placed and an upper space facing the lower space with the sheet material interposed therebetween; a first integration process in which the pressure inside the chamber is reduced so that the pressure in the lower space is lower than the pressure in the upper space, and the sheet material is brought into contact with the workpiece by a pressure difference formed between the upper space and the lower space in the chamber, thereby adhering the sheet material to the workpiece; a pressure difference adjusting step of adjusting the pressure in the chamber so that the pressure difference between the upper space and the lower space in the chamber is reduced after the first integration step; a second integration process in which the pressure in the internal space of the chamber is increased to a pressure equal to or higher than atmospheric pressure while maintaining the adjusted pressure difference, thereby adhering the sheet material to the workpiece; A method for manufacturing a semiconductor product, comprising:

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