Method for isolating chamber space from processing space using internal wafer transfer capability

Abstract

An exemplary substrate processing system may include a chamber body defining a transfer region. The system may include a lid plate seated on the chamber body. The lid plate may define a plurality of openings. The system may include a plurality of lid stacks. The system may include a plurality of substrate supports. The system may include a plurality of peripheral valves. Each peripheral valve may be disposed in one of the processing regions. Each peripheral valve may include a bottom plate coupled to the chamber body. The peripheral valve may include a bellows. The bellows may be coupled to the bottom plate. The peripheral valve may include a seal ring having a body defining a central opening. A bottom surface of the body may be coupled to the bellows. The body may define a recess having a diameter greater than a diameter of a support plate of the substrate support.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of and priority to U.S. Patent Application No. 17 / 486,616, entitled "METHOD OF ISOLATING THE CHAMBER VOLUME TO PROCESS VOLUME WITH INTERNAL WAFER TRANSFER CAPABILITY," filed September 27, 2021, which is incorporated herein by reference in its entirety. [Technical Field]

[0002] TECHNICAL FIELD This technology relates to semiconductor processing equipment, and more particularly to components of semiconductor chambers. [Background technology]

[0003] Semiconductor processing systems often utilize cluster tools to integrate several processing chambers together. Such configurations can facilitate several sequential processes without removing the substrate from the controlled processing environment, or can allow similar processes to be performed on multiple substrates at once within varying chambers. Such chambers can include, for example, degassing chambers, pre-processing chambers, transfer chambers, chemical vapor deposition chambers, physical vapor deposition chambers, etch chambers, metrology chambers, and other chambers. The combination of chambers within a cluster tool, and the operating conditions and parameters under which they operate, are selected to produce a specific structure using a specific process recipe and process flow.

[0004] Proper sealing of the processing volume of the chamber can be important to maintain a desired environment for processing. Additionally, sealing may be required to maintain a vacuum in certain regions of the processing system.

[0005] Therefore, there is a need for improved sealing systems and components that can be used to manufacture high quality semiconductor devices. The present technology addresses these and other needs. Summary of the Invention

[0006] An exemplary substrate processing system may include a chamber body defining a transfer region. The system may include a lid plate seated on the chamber body. The lid plate may define a plurality of openings through the lid plate. The system may include a plurality of lid stacks equal to the number of openings defined through the lid plate. The plurality of lid stacks may at least partially define a plurality of processing regions vertically offset from the transfer region. The system may include a plurality of substrate support assemblies equal to the number of openings defined through the lid plate. Each substrate support assembly of the plurality of substrate support assemblies may be disposed within a respective one of the plurality of processing regions. Each substrate support assembly of the plurality of substrate support assemblies may include a support plate and a shaft coupled to a bottom of the support plate. The system may include a plurality of peripheral valves equal to the number of openings defined through the lid plate. Each peripheral valve of the plurality of peripheral valves may be disposed beneath a respective one of the plurality of substrate support assemblies within a respective one of the plurality of processing regions. Each peripheral valve of the plurality of peripheral valves may include a bottom plate coupled to the lower end of the chamber body. The bottom plate may be aligned with a respective one of the plurality of openings. The peripheral valve may include a chamber seal bellows characterized by a first surface and a second surface opposite the first surface. The first surface of the seal bellows may be coupled to an upper surface of the bottom plate. The peripheral valve may include a seal ring having a body defining a central opening dimensioned to receive a shaft of each one of the plurality of substrate support assemblies. The bottom surface of the body may be coupled to an upper surface of the seal bellows. The upper surface of the body may define a recess having a diameter greater than a diameter of the support plate of each one of the plurality of substrate support assemblies. The seal ring may be vertically movable within each one of the plurality of processing regions.

[0007] In some embodiments, each peripheral valve of the plurality of peripheral valves may include a shock-absorbing mechanism. The shock-absorbing mechanism may include a spring. The seal ring may include at least one hard stop disposed on an upper surface of the seal ring. Each peripheral valve of the plurality of peripheral valves may include a lift mechanism disposed below the bottom plate. Each lid stack of the plurality of lid stacks may include a chalk plate seated on the lid plate along a first surface of the chalk plate. The chalk plate may include an inner portion extending downwardly along the inner surface of the chamber body inwardly of the inner surface of the chamber body. An upper end of the seal ring may be vertically aligned with at least a portion of the inner portion of the chalk plate. Each substrate support assembly may be vertically movable within a respective one of the plurality of processing regions. A raised position of the substrate support assembly may be higher than a raised position of a respective one of the plurality of peripheral valves. A chamber seal bellows may be expandable and contractible along a vertical axis of the chamber seal bellows.

[0008] Some embodiments of the present technology may include a substrate processing chamber. The chamber may include a chamber body defining a processing region. The chamber may include a bottom plate coupled to a lower end of the chamber body. The bottom plate may define a central opening. The chamber may include a substrate support disposed within the chamber body. The substrate support assembly may include a support plate including a heater. The substrate support may include a shaft coupled to a bottom of the support plate and extending through the central opening in the bottom plate. The chamber may include a peripheral valve disposed below the substrate support within the processing region. The peripheral valve may include a chamber seal bellows characterized by a first surface and a second surface opposite the first surface. The first surface of the seal bellows may be coupled to an upper surface of the bottom plate. The peripheral valve may include a seal ring having a body defining a central opening dimensioned to receive the shaft of the substrate support. The bottom surface of the body may be coupled to an upper surface of the seal bellows. The upper surface of the body may define a recess having a diameter greater than a diameter of the support plate of the substrate support. The seal ring may be vertically movable within the multiple processing regions.

[0009] In some embodiments, the peripheral valve may include a plurality of atmospheric seal bellows coupled to a bottom surface of the bottom plate. The seal ring may include at least one hard stop disposed on an upper surface of the seal ring. The at least one hard stop may include a polymeric material. The chamber may include a choke plate disposed on the chamber body. The choke plate may include an inner portion extending inwardly from an inner surface of the chamber body. When the peripheral valve is in the raised position, at least a portion of the seal ring may contact a bottom of the inner portion of the choke plate. The peripheral valve may include a shock-absorbing mechanism. The shock-absorbing mechanism may include a ball stud joint.

[0010] Some embodiments of the present technology may include a method for processing a substrate. The method may include moving a substrate support upward from a transfer position to a processing position within a semiconductor processing chamber. The method may include moving a perimeter valve upward within the semiconductor processing chamber to seal the processing region from the remainder of the chamber volume. The method may include flowing a precursor into the semiconductor processing chamber. The method may include generating a plasma of the precursor within the processing region of the semiconductor processing chamber. The method may include etching a material on the substrate.

[0011] In some embodiments, the peripheral valve can be moved upward until the upper surface of the peripheral valve contacts the lower surface of a choke plate seated on the chamber body of the semiconductor processing chamber, and when the upper surface of the peripheral valve contacts the lower surface of the choke plate, the peripheral valve can be self-aligning.

[0012] Such techniques can provide numerous advantages over conventional systems and techniques. For example, embodiments may allow for sealing a processing space from a chamber space, thereby allowing for sealing processing spaces of adjacent chambers from one another while still utilizing a shared transfer region. Additionally, embodiments may allow for sealing vacuum regions from one another and / or from atmospheric pressure regions during processing. These and other embodiments, along with many of their advantages and features, are described in more detail in the following specification and in connection with the accompanying drawings.

[0013] A further understanding of the nature and advantages of the disclosed technology may be realized by reference to the remaining portions of the specification and the drawings. [Brief explanation of the drawings]

[0014] [Figure 1A] 1 shows a schematic top view of an exemplary processing tool according to some embodiments of the present technique; [Figure 1B] 1 shows a schematic partial cross-sectional view of an exemplary processing system according to some embodiments of the present technique; [Figure 2] 1 shows a schematic isometric view of a transfer section of an exemplary substrate processing system in accordance with some embodiments of the present technique; [Figure 3] 1 shows a schematic isometric view of a lid plate of an exemplary substrate processing system in accordance with some embodiments of the present technique; [Figure 4] 1 shows a schematic partial cross-sectional view of an exemplary system layout of an exemplary substrate processing system according to some embodiments of the present technique; [Figure 5] 1 shows a schematic cross-sectional side view of an exemplary substrate processing system according to some embodiments of the present technique; [Figure 6A] 1 shows a schematic cross-sectional side view of a peripheral valve of an exemplary substrate processing system in accordance with some embodiments of the present technique; [Figure 6B] 1 shows a schematic cross-sectional side view of a peripheral valve of an exemplary substrate processing system in accordance with some embodiments of the present technique; [Figure 6C]1 shows a schematic cross-sectional side view of a peripheral valve of an exemplary substrate processing system in accordance with some embodiments of the present technique; [Figure 7A-C] 1 shows a schematic partial cross-sectional view of an exemplary chamber system according to some embodiments of the present technique; [Figure 8] 1 illustrates exemplary method steps for processing a substrate in accordance with some embodiments of the present technique. DETAILED DESCRIPTION OF THE INVENTION

[0015] Some of the figures are included as schematic diagrams. It is understood that the figures are for illustrative purposes and are not to be considered to scale unless expressly stated to be to scale. Furthermore, as schematic diagrams, the drawings are provided to aid in understanding and may not include all aspects or information compared to realistic depictions and may include material that is emphasized for illustrative purposes.

[0016] In the accompanying drawings, similar components and / or features may have the same reference numeral. Furthermore, various components belonging to the same family may be distinguished by adding a letter after the reference numeral that distinguishes between the similar components. When only a first reference numeral is used in this specification, the description may apply to any similar component having the same first reference numeral, regardless of the letter.

[0017] Substrate processing involves time-consuming steps to add, remove, or otherwise modify material on a wafer or semiconductor substrate. Efficient substrate movement can reduce queue times and improve substrate throughput. To increase the number of substrates processed within a cluster tool, additional chambers can be incorporated onto the mainframe. Transfer robots and processing chambers can be added successively by increasing the length of the tool, but as the footprint of the cluster tool expands, space efficiency can become less efficient. In response, the present technology can include cluster tools with an increased number of processing chambers within a given footprint. To accommodate the limited footprint around the transfer robot, the technology can increase the number of processing chambers laterally outward from the robot. For example, some conventional cluster tools may include one or two processing chambers arranged around a centrally located section of the transfer robot to maximize the number of chambers radially around the robot. The present technology can further develop this concept by incorporating additional chambers laterally outward as other rows or groups of chambers. For example, the techniques may be applied in a cluster tool that includes three, four, five, six, or more processing chambers, each accessible by one or more robot access locations.

[0018] As additional processing locations are added, accessing these processing locations from a central robot may no longer be feasible without additional transfer capabilities at each location. Some prior art may include a wafer carrier on which the substrate sits during transfer. However, the wafer carrier may contribute to thermal non-uniformities and particle contamination on the substrate. The present technology overcomes these problems by incorporating a transfer section vertically aligned with the processing chamber region and a carousel or transfer device that can operate in cooperation with the central robot to access the additional wafer locations. In this case, the substrate support can move vertically between the transfer region and the processing region to transfer substrates for processing.

[0019] Based on the arrangement of the processing chamber regions around the transfer section, each processing chamber region can share a common space. To enable the processing regions within each chamber to be isolated from each other, embodiments can include a peripheral valve mechanism that can be raised to seal and isolate the processing regions of each chamber from each other during processing. The peripheral valve can be lowered to open the transfer region of each chamber to the shared space, allowing the transfer section to transfer wafers between chambers within the shared space. Embodiments can also include bellows that help seal the chamber space from atmospheric conditions when the peripheral valve is raised. Thus, embodiments can provide isolation of the processing regions between chambers for improved processing conditions while still facilitating the transfer of wafers within a common processing space.

[0020] While the remainder of the disclosure will routinely identify particular structures, such as a four-position transfer region, in which the present structures and methods may be utilized, it will be readily understood that the faceplates or components discussed may similarly be utilized in any number of other systems or chambers in which multiple components may be joined or coupled, and in any number of other apparatuses. Correspondingly, the present technology should not be considered limited to use with any particular chamber. Furthermore, while an exemplary tool system is described to provide a foundation for the present technology, it should be understood that the present technology may be incorporated into any number of semiconductor processing chambers that may benefit from some or all of the described processes and systems.

[0021] 1A illustrates a top view of one embodiment of a deposition, etch, bake, and cure chamber processing tool or system 100 in accordance with some embodiments of the present technology. In the figure, a set of front-opening integrated pods 102 supplies substrates of various sizes, which are received by robotic arms 104a and 104b within a factory interface 103, placed within a load lock or low-pressure holding area 106, and then transferred to one of substrate processing regions 108 located within chamber systems or quad sections 109a-c (each of which may be a substrate processing system having a transfer region fluidly coupled to multiple processing regions 108). While a quad system is shown, it should be understood that standalone chambers, twin chambers, and other platforms incorporating multiple chamber systems are equally encompassed by the present technology. A second robot arm 110 housed within a transfer chamber 112 can be used to transfer substrate wafers from the holding area 106 to the quad section 109, and the second robot arm 110 can be housed within a transfer chamber that can connect each of the quad sections or processing systems. Each substrate processing area 108 can be equipped to perform several substrate processing steps, including cyclical layer deposition, atomic layer deposition, chemical vapor deposition, physical vapor deposition, and any number of deposition processes, including etching, pre-cleaning, annealing, plasma treatment, degassing, alignment, and other substrate processes.

[0022] Each quad section 109 may include a transfer region capable of receiving substrates from and transferring substrates to the second robot arm 110. The transfer region of the chamber system may be aligned with a transfer chamber having the second robot arm 110. In some embodiments, the transfer region may be laterally accessible to the robot. In subsequent steps, components of the transfer section may vertically move the substrate into the processing region 108 thereon. Similarly, the transfer region may also be operable to rotate the substrate between positions within each transfer region. The substrate processing region 108 may include any number of system components for depositing, annealing, curing, and / or etching a material film on a substrate or wafer. In one configuration, two sets of processing regions, such as those in quad sections 109a and 109b, may be used to deposit material on the substrate, and a third set of processing chambers, such as those in quad section 109c, may be used to cure, anneal, or process the deposited film. In other configurations, all three sets of chambers, such as the 12 chambers shown, can be configured to deposit and / or cure a film on a substrate.

[0023] As shown, the second robot arm 110 may include two arms for simultaneously transferring and / or retrieving multiple substrates. For example, each quad section 109 may include two accesses 107 along a surface of the transfer region housing, which may be laterally aligned with the second robot arm. The accesses may be defined along a surface adjacent to the transfer chamber 112. In some embodiments, as shown, a first access may be aligned with a first substrate support of the quad section's plurality of substrate supports. Additionally, a second access may be aligned with a second substrate support of the quad section's plurality of substrate supports. The first substrate support may be adjacent to the second substrate support, and the two substrate supports may define a first row of substrate supports in some embodiments. As shown in the illustrated configuration, the second row of substrate supports may be positioned laterally outward from the transfer chamber 112 and behind the first row of substrate supports. The two arms of the second robot arm 110 are spaced apart so that they can simultaneously enter a quad section or chamber system to transfer or retrieve one or two substrates to or from a substrate support within the transfer region.

[0024] Any one or more of the transfer regions described can be incorporated with additional chambers separate from the fabrication systems shown in the various embodiments. It will be appreciated that additional configurations of deposition, etch, anneal, and cure chambers for material films are contemplated in the processing system 100. Additionally, any number of other processing systems incorporating transfer systems for performing any of the specific processes, such as transferring substrates, can be utilized with the present technology. In some embodiments, a processing system that can provide access to multiple processing chamber regions while maintaining a vacuum environment in various sections, such as the holding and transfer regions mentioned, can enable processes to be performed in multiple chambers while maintaining a specific vacuum environment between separate processes.

[0025] FIG. 1B illustrates a schematic cross-sectional elevation view of one embodiment of an exemplary processing tool, e.g., through a chamber system, according to some embodiments of the present technique. FIG. 1B may illustrate a cross-sectional view through any two adjacent processing regions 108 within any quad section 109. The elevation view may illustrate the configuration or fluid coupling of one or more processing regions 108 with a transfer region 120. For example, a continuous transfer region 120 may be defined by a transfer region housing 125. The housing may define an open interior space in which several substrate supports 130 may be disposed. For example, as illustrated in FIG. 1A, the exemplary processing system may include four or more substrate supports 130, including multiple substrate supports 130 distributed within the housing around the transfer region. The substrate support may be a pedestal as shown, although several other configurations may be used. In some embodiments, the pedestal may be vertically movable between the transfer region 120 and a processing region above the transfer region. The substrate support may be vertically movable along a central axis of the substrate support along a path between a first portion and a second portion within the chamber system. Correspondingly, in some embodiments, each substrate support 130 may be axially aligned with an overlying processing region 108 defined by one or more chamber components.

[0026] The open transfer region may provide the ability for a transfer device 135, such as a carousel, to engage and move, e.g., rotationally, a substrate between various substrate supports. The transfer device 135 may be rotatable about a central axis, allowing a substrate to be positioned for processing in any of the processing regions 108 within the processing system. The transfer device 135 may include one or more end effectors that may engage the substrate from above, below, or may engage the outer edge of the substrate to move it around the substrate supports. The transfer device may receive a substrate from a transfer chamber robot, such as robot 110 described above. The transfer device may then rotate the substrate to an alternating substrate support to facilitate further substrate transfer.

[0027] Once positioned and waiting for processing, the transfer apparatus can position an end effector or arm between the substrate supports, allowing the substrate supports to rise above the transfer apparatus 135 and transfer a substrate into the processing region 108, which may be vertically offset from the transfer region. For example, as shown, substrate support 130a can transfer a substrate into processing region 108a, and substrate support 130b can transfer a substrate into processing region 108b. This can also be done with the other two substrate supports and processing regions, and even with additional substrate supports and processing regions in embodiments where additional processing regions are included. In this configuration, when the substrate supports are operably engaged to process a substrate, for example in the second position, they can at least partially define the processing region 108 from below, which may be axially aligned with the associated substrate support. The processing region may be defined from above by a face plate 140 and other lid stack components. In some embodiments, each processing region may have an individual lid stack component, but in some embodiments, a component may house multiple processing regions 108. Based on this configuration, in some embodiments, each processing region 108 may be fluidly coupled to the transfer region while being fluidly isolated from above from each other processing region within the chamber system or quad section.

[0028] In some embodiments, face plate 140 can function as a system electrode for generating a localized plasma within processing region 108. As shown, each processing region can utilize or incorporate a separate face plate. For example, face plate 140a can be included to define processing region 108a from above, and face plate 140b can be included to define processing region 108b from above. In some embodiments, the substrate support can function as a companion electrode for generating a capacitively coupled plasma between the face plate and the substrate support. In some embodiments, the face plate can be heated by a heater 142 that extends around the face plate. Pumping liner 145 can at least partially define processing region 108 radially or laterally, depending on the geometry of the space. Again, separate pumping liners can be used for each processing region. For example, pumping liner 145a can at least partially radially define processing region 108a, and pumping liner 145b can at least partially radially define processing region 108b. Pumping liner 145 can be seated on thermal choke plate 147, which can control heat distribution from the lid stack to the cooled chamber body. In embodiments, shield plate 150 can be disposed between lid 155 and face plate 140, and again, separate shield plates can be included to facilitate fluid distribution within each processing region. For example, shield plate 150a can be included for distribution toward processing region 108a, and shield plate 150b can be included for distribution toward processing region 108b.

[0029] The lid 155 may be a separate component for each processing region or may include one or more common features. In some embodiments, the lid 155 may be one of two separate lid plates in the system. For example, a first lid plate 158 may sit atop the transfer region housing 125. The transfer region housing may define an open space, and the first lid plate 158 may include several openings therethrough to divide the overlying space into specific processing regions. In some embodiments, as shown, the lid 155 may be a second lid plate and may be a single component defining multiple openings 160 for fluid supply to individual processing regions. For example, the lid 155 may define a first opening 160a for fluid supply to processing region 108a, and the lid 155 may define a second opening 160b for fluid supply to processing region 108b. When included, additional openings may be defined for additional processing regions within each section. In some embodiments, each quad section 109, or a multi-processing region section that may accommodate more or less than four substrates, may include one or more remote plasma units 165 for delivering plasma effluents into the processing chambers. In some embodiments, each chamber processing region may incorporate a separate plasma unit, although in some embodiments, fewer remote plasma units may be used. For example, as shown, a single remote plasma unit 165 may be used for multiple chambers, e.g., two, three, four, or more chambers (up to all of the chambers for a particular quad section). In embodiments of the present technology, piping may extend from the remote plasma unit 165 to each opening 160 to supply plasma effluents for processing or cleaning.

[0030] In some embodiments, a purge channel 170 can extend through the transfer region housing near or adjacent each substrate support 130. For example, multiple purge channels can extend through the transfer region housing to provide fluid access for supplying fluidly coupled purge gas into the transfer region. The number of purge channels can be the same as or different from the number of substrate supports in the processing system, and can be greater or less than the number of substrate supports. For example, a purge channel 170 can extend through the transfer region housing below each substrate support. In the illustrated two substrate supports 130, a first purge channel 170a can extend through the housing near substrate support 130a, and a second purge channel 170b can extend through the housing near substrate support 130b. It should be understood that any additional substrate supports can similarly have purge channels plumbed through the transfer region housing to supply purge gas into the transfer region.

[0031] When purge gas is transmitted through one or more of the purge channels, it may also be exhausted through pumping liner 145, which may provide an exhaust path from the processing system. Thus, in some embodiments, both process precursors and purge gas may be exhausted through the pumping liners. The purge gas may flow upward into the associated pumping liner, for example, purge gas flowing through purge channel 170b may be exhausted from the processing system through pumping liner 145b.

[0032] As previously mentioned, processing system 100, and more specifically, a quad section or chamber system incorporated into processing system 100 or other processing systems, may include a transfer section disposed below the illustrated processing chamber region. FIG. 2 illustrates a schematic isometric view of the transfer section of an exemplary processing system 200, in accordance with some embodiments of the present technique. FIG. 2 may illustrate additional aspects or variations of the transfer region 120 described above, which may include any of the components or features described above. The illustrated system may include a transfer region housing 205 that defines a transfer region in which several components may be included. Furthermore, the transfer region may be at least partially defined from above by a processing chamber or processing region fluidly coupled to the transfer region, e.g., by the processing chamber region 108 shown in quad section 109 in FIG. 1A. Sidewalls of the transfer region housing may define one or more access locations 207 where substrates can be transferred and retrieved, e.g., by the second robot arm 110 described above. The access locations 207 may be slit valves or other sealable access locations, and in some embodiments include doors or other sealing mechanisms to provide a sealed environment within the transfer region housing 205. While two such access locations 207 are shown, it is understood that in some embodiments, only a single access location 207 may be included, and access locations on multiple sides of the transfer region housing may also be included. Furthermore, it is understood that the transfer section shown may be sized to accommodate substrates of any substrate size, including 200 mm, 300 mm, 450 mm, or larger or smaller, including substrates featuring any number of profiles or shapes.

[0033] Within the transfer region housing 205, there may be multiple substrate supports 210 positioned throughout the transfer region space. While four substrate supports are shown, it should be understood that any number of substrate supports is equally encompassed by embodiments of the present technology. For example, three, four, five, six, eight, or more substrate supports 210 may be housed within a transfer region according to embodiments of the present technology. A second robot arm 110 may transfer a substrate to one or both of the substrate supports 210a or 210b via the access portion 207. Similarly, the second robot arm 110 may retrieve a substrate from these locations. Lift pins 212 may protrude from the substrate support 210, allowing the robot access underneath the substrate. The lift pins may be fixed on the substrate support, or may be fixed in a position that allows the substrate support to be recessed downward, or in some embodiments, the lift pins may also pass through the substrate support to raise and lower. The substrate support 210 may be vertically movable and, in some embodiments, may extend to a processing chamber region of a substrate processing system located above the transfer region housing 205 , such as processing chamber region 108 .

[0034] The transfer region housing 205 can provide access 215 for an alignment system, which can include an aligner that can extend through an opening in the transfer region housing as shown and can operate in conjunction with a laser, camera, or other monitoring device projecting or transmitting through an adjacent opening to determine whether a moving substrate is properly aligned. The transfer region housing 205 can also include a transfer apparatus 220 that can operate in several ways to position and move substrates between various substrate supports. In one example, the transfer apparatus 220 can move substrates on substrate supports 210a and 210b to substrate supports 210c and 210d, which can allow additional substrates to be transferred into the transfer chamber. Additional transfer steps can include rotating the substrate between the substrate supports for additional processing in the overlying processing region.

[0035] The transfer apparatus 220 can include a central hub 225, which can include one or more shafts extending within the transfer chamber. An end effector 235 can be coupled to the shaft. The end effector 235 can include multiple arms 237 extending radially or laterally outward from the central hub. While a central body with arms extending therefrom is shown, the end effector can further include separate arms, each coupled to a shaft or central hub, in various embodiments. Embodiments of the present technology can include any number of arms. In some embodiments, the number of arms 237 can be similar to or equal to the number of substrate supports 210 included in the chamber. Thus, for four substrate supports, as shown, the transfer apparatus 220 can include four arms extending from the end effector. The arms may feature any number of shapes and profiles, such as straight or arcuate profiles, and may further include any number of distal profiles including hooks, rings, forks, or other designs for supporting and / or providing access to the substrate, for example, for alignment or engagement.

[0036] The end effector 235, or components or portions of the end effector, may be used to contact the substrate during transfer or movement. The components and end effectors may be made of or include several materials, including conductive and / or insulating materials. In some embodiments, the materials may be coated or plated to withstand contact with precursors or other chemicals that may pass into the transfer chamber from the overlying processing chambers.

[0037] Additionally, materials can be provided or selected to withstand other environmental characteristics, such as temperature. In some embodiments, the substrate support can be operable to heat a substrate disposed thereon. The substrate support can be configured to raise the temperature of the surface or substrate to about or greater than 100°C, about or greater than 200°C, about or greater than 300°C, about or greater than 400°C, about or greater than 500°C, about or greater than 600°C, about or greater than 700°C, about or greater than 800°C, or higher. During operation, any of the above temperatures can be maintained, and thus components of the transfer apparatus 220 can be exposed to any of the above temperatures or temperatures encompassed. Accordingly, in some embodiments, any of the materials can be selected to accommodate the above temperature ranges and can include materials such as ceramics and metals, which can be characterized by relatively low coefficients of thermal expansion or other beneficial properties.

[0038] The component bond may also be adapted to operate in high temperature and / or corrosive environments. For example, if the end effector and tip are each ceramic, the bond may include a press fit, snap fitting, or other fitment that may not include additional materials such as bolts that may expand and contract with temperature and crack the ceramic. In some embodiments, the tip may be continuous with the end effector or may be integrally formed therewith. Any other materials that can promote process and resistance during operation may be utilized and are also encompassed by the present technology.

[0039] As previously mentioned, there may be a lid plate above the transfer region housing 205, such as a first lid plate, which may define separate processing regions accessible to the substrate support. FIG. 3 shows a schematic isometric view of a lid plate 300 of an exemplary substrate processing system according to some embodiments of the present technique. The lid plate 300 may include any features of the first lid plate 158 or any other component described above. As shown, the lid plate 300 may define a first plurality of openings 305, which may define the individual processing regions described above. The lid plate 300 may also define a second plurality of openings 310, which may be positioned proximate to an associated opening 305. The openings 305 may define processing regions, and the openings 310 may define exhaust access, i.e., an access path to a system foreline through which each processing region may be evacuated. As described further below, the pumping liner for each individual lid stack may be oriented to exhaust through an associated opening 310. Although four openings 305 and four openings 310 are shown, it should be understood that lid plates according to embodiments of the present technology may include any number of openings for any configuration of processing chamber or exhaust system.

[0040] In some embodiments of the present technology, a cooling system may be integrated into the lid plate. As shown, fluid cooling lines 315 may extend around each first opening 305, allowing for cooling of the chamber body during processing. For system setup, each chamber region may be exhausted to a foreline connection at the distal end of the lid plate 300 as shown, although other configurations may be encompassed by the present technology as well. Heated process gases or wastewater may flow through the lid stack components and out the second opening, potentially increasing the temperature of the lid plate in these regions. Thus, a temperature profile may be created across the lid plate, with lower temperatures occurring near the center of the lid plate. This may affect the heat distribution from each individual lid stack, as discussed further below. Additionally, the lid stack components may be unevenly bonded, which may result in uneven heat loss from the components.

[0041] FIG. 4 shows a schematic partial cross-sectional view of an exemplary substrate processing system 400 layout according to some embodiments of the present technology, and may show a cross-section through the first and second openings in the lid plate described above. The figure may illustrate aspects of the processing system and components described above, and may further illustrate additional aspects of the system. The figure may show additional views or versions of the system. It should be understood that processing system 400 may include any aspect of any portion of a processing system described or illustrated elsewhere, and may illustrate aspects of a lid stack incorporated in any of the systems described elsewhere. For example, processing system 400 may represent a portion of a system above a transfer region of a chamber, and may further represent components disposed above the chamber body defining the transfer region described above. For example, it should be understood that processing system 400 may further incorporate any of the components described above, including, for example, any components described above with respect to a system including a transfer region and components of processing system 400.

[0042] As previously mentioned, a multi-chamber system can include a separate lid stack for each processing region. The processing system 400 illustrates a single lid stack that can be part of a multi-chamber system including two, three, four, five, six, or more processing chamber sections. However, it should be understood that the described lid stack components can also be incorporated into stand-alone chambers. As previously mentioned, one or more lid plates can comprise the individual lid stacks for each processing region. For example, as shown, the processing system 400 can include a first lid plate 405, which can be or include any of the aspects of the lid plate 158 described above. For example, the first lid plate 405 can be a single lid plate that can seat on the transfer region housing 402 or the chamber body described above. The first lid plate 405 can seat on the housing along a first surface of the lid plate. The lid plate 405 can define a first plurality of openings 406 therethrough that allow for vertical movement of a substrate into the defined processing region described above. The openings 406 can define a processing region in which substrate processing can be performed. The lid plate 405 can further define a second plurality of openings 407 therethrough that allow for exhaust to a foreline and pumping system associated with the processing system.

[0043] The first lid plate 405 may seat multiple lid stacks, as previously described. In some embodiments, the first lid plate 405 may define the previously described recessed ledge extending from a second surface of the first lid plate 405 opposite the first surface. The recessed ledge may extend around each opening 406 of the first plurality of openings, or may extend around a portion of an opening as described above. Each lid stack may seat on a separate recessed ledge, or may seat on a non-recessed opening. The multiple lid stacks may include a number of lid stacks equal to the number of openings defined through the first lid plate. The lid stacks may at least partially define multiple processing regions vertically offset from the previously described transfer region. While one opening 406 and one lid stack are shown and further described below, it should be understood that the processing system 400 may include any number of lid stacks having similar or previously described components incorporated into the system in embodiments encompassed by the present technology. The following description may be applied to any number of lid stacks or system components.

[0044] The lid stack, in embodiments, can include any number of components and can include any of the components described above. For example, the lid stack can include a chalk plate 410 seated on a second surface of the lid plate 405. The chalk plate 410 can seat on the lid plate at a first surface of the chalk plate 410. The chalk plate can define a first opening axially aligned with an associated opening 406 of the first plurality of openings through the lid plate. The chalk plate can also define a second opening axially aligned with an associated opening 407 of the second plurality of openings through the lid plate. As shown, the chalk plate 410 can include a rim 412 that defines the first opening through the chalk plate. The rim 412 can extend along a sidewall of the lid plate that defines the associated first opening 406 of the first plurality of openings. As described below, in some embodiments, a gap can be maintained between the rim and the lid plate to control heat flow between the components. The rim 412 may extend perpendicularly from the first surface of the chalk plate toward the lid plate 405 and form a protrusion from the chalk plate 410 .

[0045] A pumping liner 415 may seat on a second surface of the choke plate 410 opposite the first surface of the choke plate seated on the lid plate 405. As described above, the pumping liner 415 may be positioned to provide exhaust to the processing space, which may flow through an associated second opening 407. Correspondingly, the opening 407 of the second plurality of openings defined through the lid plate and the second opening defined through the choke plate 410 may form a flow path extending from the pumping liner for a particular processing region defined by a particular lid stack, which flow path may fluidly couple the processing region to a pumping system or an exhaust system. The lid stack may include a face plate 420 seated on the pumping liner 415. In some embodiments, the face plate 420 may be a heating element that may include a heater 422, which in some embodiments may be an annular heater extending around the face plate.

[0046] A shield plate 425 can be seated on the face plate 420, which can further promote uniform distribution of precursors as described above. In some embodiments, a face plate heater 422 can extend around the outer edge of the shield plate 425, e.g., radially outward from the shield plate, and can extend radially around the shield plate 425. A gap can be maintained between the shield plate and the heater 422 to limit heating of the shield plate. A gas box 430 can be seated on the shield plate 425. The gas box 430 can define channels 432 through which a cooling fluid can flow to control the temperature of the components. A second lid plate 435 can be seated on the gas box 430.

[0047] Correspondingly, cooling can be provided both above the faceplate containing the gas box and below the faceplate containing the lid plate. While cooling from the gas box can be maintained relatively uniformly due to the stacked configuration and coupling with the shield plate, which can provide axisymmetric cooling from above, cooling for the lid plate can be more difficult to maintain due to the asymmetric coupling of the underlying components. For example, the pumping liner 415 can have direct heating from the faceplate seated thereon, and thus the pumping liner 415 can be heated relatively uniformly from the faceplate. However, the heat distribution from the pumping liner may not be uniform. As shown, a choke plate 410 can provide coupling between the pumping liner and the lid plate 405, which can include cooling. A higher temperature gradient may be formed across the lid plate around the second opening 407, but the choke plate 410 and pumping liner 415 may have a strengthened direct bond with the lid plate at this location, which may promote heat transfer from the pumping liner.

[0048] FIG. 5 illustrates a schematic cross-sectional side view of an exemplary processing chamber 500 according to some embodiments of the present technology. FIG. 5 may provide additional details regarding components of systems 100, 200, and / or 400. Chamber 500 may be understood to include any feature or aspect of systems 100, 200, and / or 400 described above in some embodiments. Chamber 500 may be used to perform semiconductor processing, such as deposition, removal, etching, and cleaning steps. Chamber 500 may illustrate a partial view of the components of the discussed chamber that may be incorporated into a semiconductor processing system. Any aspect of chamber 500 may be incorporated into other processing chambers or systems, as would be readily apparent to one skilled in the art.

[0049] The chamber 500 may include a chamber body 502, which may define a transfer region and a processing region. A lid plate 505 may seat on the chamber body 502 and may support a choke plate 510. The choke plate may define an opening axially aligned with an associated opening in the lid plate 505. As shown, the choke plate 510 may include a rim 512 defining an opening therethrough. The rim 512 may extend along an inner sidewall of the lid plate 505 such that the rim 512 extends within the opening defined by the lid plate 505, with at least a portion of the rim 512 extending below all or a portion of the lid plate 505. In some embodiments, a liner 515, such as a pumping liner, may seat on an upper surface of the choke plate 510. A face plate 520 may be disposed on the liner 515. In some embodiments, one or more intervening components may be disposed between faceplate 520 and liner 515 .

[0050] A substrate support 525 may be disposed within the chamber body 502. The substrate support 525 may be vertically movable within the chamber body 502 between a transfer region and a processing region. The substrate support 525 may include a support plate 530, which may include a heater in some embodiments. The substrate support 525 may also include a shaft 535 that passes through the bottom of the chamber body 502 and may be connected to a radio frequency source and / or other power source.

[0051] The chamber 500 may include a peripheral valve 540 that may selectively seal a processing region from the common chamber space during processing. The peripheral valve 540 may be located in a transfer region of the chamber 500 and may be located outward and / or below the substrate support 525. The peripheral valve 540 may include a bottom plate 545 that may be coupled to the lower end of the chamber body 502. For example, in some embodiments, an upper surface of the outer periphery of the bottom plate 545 may be positioned relative to and coupled to the bottom surface of the chamber body 502. The bottom plate 545 may be generally aligned with the opening in the lid plate 505. The bottom plate 545 may define a central opening that receives the shaft 535 of the substrate support 525. The peripheral valve 540 may include a chamber seal bellows 550 that may feature a first surface and a second surface that may be opposite the first surface. The chamber seal bellows 550 can be expandable along with the extension of the chamber seal bellows 550 such that the distance between the first surface and the second surface can change during movement of the peripheral valve 540. The bottom surface of the chamber seal bellows 550 can be coupled to the top surface of the bottom plate 545 in some embodiments. The peripheral valve 540 can include a seal ring 555, which includes a body defining a central opening sized to receive the shaft 535 of the substrate support 525. The body of the seal ring 555 can feature a first surface (e.g., a bottom surface) and a second surface (e.g., a top surface), where the first surface is coupled to the top surface of the chamber seal bellows 550 such that vertical movement of the seal ring 555 within the chamber body 502 can cause the chamber seal bellows 550 to expand and / or contract. The second surface of the body of the seal ring 555 can define a recess having a diameter larger than the diameter of the support plate 530 of the substrate support 525, thereby allowing a portion of the support plate 530 to be accommodated within the recess when the substrate support 525 and peripheral valve 540 are in the lowered position.As described in more detail below, the peripheral valve 540 can move upward within the chamber body 502 to a raised position, in which the upper surface of the sealing ring 555 (and / or a hard stop coupled thereto) can contact the lower surface of the rim 512 of the choke plate 510, which can be vertically aligned with the upper surface of the sealing ring 555. The upper surface of the sealing ring 555 can include a compressible sealing element, such as an O-ring or gasket, that can be compressed against the lower surface of the rim 512 to seal the processing region from the remainder of the chamber volume. This can be particularly beneficial in embodiments in which multiple chambers share a common chamber volume, because the raised peripheral valve 540 allows each chamber to have its own processing region that is isolated from other processing regions during processing. Isolating the processing regions can improve operating conditions within each chamber, resulting in improved wafer quality. The peripheral valve 540 can include a lift mechanism 560, which can be positioned below the bottom plate 545. A portion of the lift mechanism 560 can extend through the bottom plate 545 and can couple with the bottom surface of the seal ring 555, and can be telescopic to move the seal ring 555 within the chamber body 502.

[0052] 6A and 6B show schematic cross-sectional side views of an exemplary valve 600 according to some embodiments of the present technology. The peripheral valve 600 can exhibit additional features of the previously described peripheral valve 540 and can include any of the features or characteristics described above. Furthermore, the peripheral valve 600 can be disposed within a previously described processing system and / or chamber, such as systems 100, 200, and 400, and / or chamber 500. The peripheral valve 600 can include a bottom plate 605 (which can be similar to bottom plate 545) that can be coupled to a lower end of a chamber body (such as chamber body 502). For example, in some embodiments, an upper surface of the outer peripheral edge of the bottom plate 605 can be positioned against and coupled to a bottom surface of the chamber body. The bottom plate 605 can include an outer rim 607 that protrudes upward from the body of the bottom plate 605 near the outer peripheral edge of the bottom plate 605. The outer rim 607 can provide increased material, which can provide greater support for the bond between the bottom plate 605 and the chamber body. The bottom plate 605 can include an inner region 609 that protrudes upward from the main body near the center of the bottom plate 605. In some embodiments, the inner region 609 can protrude upward to a height greater than the upper surface of the outer rim 607. The bottom plate 605 can define a central opening 610 that can accommodate the shaft of a substrate support, such as the substrate support 525. In some embodiments, the central opening 610 can include a generally cylindrical lower portion with a tapered upper portion. The tapered upper portion can better accommodate the lower end of the substrate support when the substrate support is in a lowered position. The bottom plate 605 can define several additional openings within the main body of the bottom plate 605. For example, as best shown in Figure 6B, the base plate 605 can define openings 611 radially inward of the outer rim 607 and radially outward of the inner region 609 on two opposite sides of the base plate 605. The base plate 605 can define other numbers of openings 611. For example, the base plate 605 can define at least two or around two openings 611, at least three or around three openings 611, at least four or around four openings 611, at least five or around five openings 611, or more openings.In many cases, the openings 611 may be spaced equally angularly around the periphery of the base plate 605, although some embodiments may provide irregular spacing between two or more of the openings 611.

[0053] The peripheral valve 600 can include a chamber seal bellows 615 (similar to the chamber seal bellows 550), which can feature a first surface 617 and a second surface 619 that can be opposite the first surface 617. The chamber seal bellows 615 can be expandable along its extension such that the distance between the first surface 617 and the second surface 619 can change during movement of the peripheral valve 600. The first surface 617 can, in some embodiments, be coupled to an upper surface of the base plate 605. For example, the first surface 617 can be clipped and / or otherwise secured to the base plate 605 at a location radially inward of the opening 611 such that the first surface 617 is secured relative to the base plate 605.

[0054] The peripheral valve 600 may include a seal ring 620 (which may be similar to seal ring 555). The seal ring 620 may include a generally annular body defining a central opening 625 capable of receiving a shaft of a substrate support. The body of the seal ring 620 may feature a first surface 621 and a second surface 623. The body of the seal ring 620 may mate with a second surface 619 of the chamber seal bellows 615 such that vertical movement of the seal ring 620 within the chamber body causes the chamber seal bellows 615 to expand and / or contract. For example, the body of the seal ring 620 may include an inward protrusion 630 that extends a distance from an inner surface of the body into the central opening 625. In some embodiments, the inward protrusion 630 may be annular in shape and may extend around the entire inner surface of the body, while in other embodiments, the inward protrusion 630 may extend from only a portion of the inner surface of the body of the seal ring 620. A second surface 619 of the chamber seal bellows 615 may be fixed and / or otherwise coupled to a lower surface of the inward protrusion 630. The lower surface of the inward protrusion and the inner wall of the annular body of the seal ring 620 may define a lower recess in the seal ring 620. The lower recess may receive a portion of the chamber seal bellows 615, thereby sealing the space extending between the underside of the seal ring 620 and the bottom plate 605.

[0055] The second surface 623 of the body of the seal ring 620 can define an upper recess having a diameter larger than the diameter of the support plate of the substrate support, allowing a portion of the support plate to be received within the recess when the substrate support and peripheral valve 600 are in the lowered position. For example, the inner wall of the body of the seal ring 620 and the upper surface of the inward protrusion 630 can define the upper recess. The second surface 623 can include a compressible sealing element 635 (e.g., an O-ring or gasket) that can be compressed between the second surface 623 and the lower surface of the chamber's choke plate when the peripheral valve 600 is in the raised position. The sealing element 635 can seat within a channel formed in the second surface 623 and can protrude slightly above the second surface 623. In some embodiments, one or more hard stops 640 can be coupled to the seal ring 620. The hard stops 640 may be formed of a polymer material, such as polyetheretherketone (PEEK) and / or other thermoplastic and / or chemically resistant polymer materials. For example, several hard stops 640 may be coupled to the outer surface of the sealing ring 620 at regular and / or irregular angular intervals. The upper surface of each hard stop 640 may extend a small distance above the second surface 623 so that, when raised, the hard stop 640 contacts the underside of the chalk plate rim, preventing the sealing ring 620 from initially contacting (or constantly contacting) the chalk plate rim. For example, each hard stop 640 may extend above the second surface 623 of the sealing ring 620 by between about 5 mils and about 100 mils, between about 10 mils and about 75 mils, between about 15 mils and about 50 mils, or between about 20 mils and about 30 mils. The thickness of the sealing element 635 can be greater than the distance between the upper surface of each hard stop 640 and the second surface 623, so that when the hard stop 640 engages the lower surface of the choke plate, the sealing element 635 is compressed between the lower surface of the choke plate and the second surface 623, sealing the processing space from the rest of the chamber space (and the slit valve).The softer polymeric material of the hard stops 640 can cushion the impact between the peripheral valve 600 and the choke plate when the peripheral valve is raised. Any number of hard stops 640 can be used. For example, the peripheral valve 600 can include at least two hard stops, at least three hard stops, at least four hard stops, at least about five hard stops, at least six hard stops, at least seven hard stops, at least eight hard stops, at least nine hard stops, at least ten hard stops, or more hard stops.

[0056] The peripheral valve 600 can include a lift mechanism 645 operable to move the seal ring 620 and the second surface 619 of the chamber seal bellows 615 within the processing chamber. The lift mechanism 645 can include a mounting bracket 650 coupling the lift mechanism 645 to the bottom plate 605. For example, a surface 651 of the mounting bracket 650 can be fixed and / or otherwise coupled to the underside of the bottom plate 605. A lower portion of the mounting bracket 650 can be connected to an actuator 655, such as a servo motor and / or other linear actuator, which can raise and lower a platform 660 movably mounted to the mounting bracket 650. A mounting support 665 can be coupled to the platform 660 such that vertical movement of the platform 660 can cause corresponding vertical movement of the mounting support 665. The mounting support 665 can define an open interior that allows the shaft of a substrate support to extend through the mounting support 665. As shown, the mounting support 665 is provided as a C-shaped body, with the central portion of the C-shape coupled to the platform 660, although other open-center designs can be utilized in various embodiments. Lift rods 670, such as pivoting lifts, can be supported on the ends of the mounting support 665. As shown here, two lift rods 670 can be provided, although other numbers of lift rods 670 are possible in various embodiments. In many cases, the number of lift rods 670 will match the number of openings 611 formed in the base plate 605. The lower end of each lift rod 670 can be coupled to the upper surface of the mounting support 665, for example, via a base 675 attached to the mounting support 665. The upper end of each lift rod 670 can pass through the base plate 605, such as through one of the openings 611. The upper end of the lift rod 670 may be directly and / or indirectly coupled to the seal ring 620. For example, in some embodiments, the upper end may be directly secured to the first surface 621 of the seal ring 620.In other embodiments, such as the one shown here, one or more seal ring supports 695 can be used to couple an upper end of each lift rod 670 to the first surface 621 of the seal ring 620. When the actuator 655 raises the platform 660, the mounting supports 665 can lift the lift rods 670, causing the upper ends of the lift rods 670 to extend upward through the openings 611 and raise the seal ring 620 relative to the base plate 605. In some embodiments, each lift rod 670 can include an atmospheric seal bellows 680. For example, the atmospheric seal bellows 680 can surround the lift rod 670, where the upper end of the atmospheric seal bellows 680 is coupled to the lower surface of the base plate 605 and the lower end of the atmospheric seal bellows 680 is coupled to the upper surface of the base 675. In this manner, the chamber can be sealed from the area of ​​the structure containing the lift mechanism 645.

[0057] In some embodiments, the base 675 can include a shock-absorbing mechanism and / or a self-aligning mechanism, which can be the same or different components. FIG. 6C shows a schematic, partially cutaway, side cross-sectional view of the base 675. For example, the base 675 can be secured to the mounting support 665, with one or more shock-absorbing mechanisms disposed between these components. As shown, the shock-absorbing mechanism can include one or more springs 685 disposed between the bottom surface of the base 675 and the top surface of the mounting support 665. When the second surface 623 and / or the hard stop 640 contact the choke plate during elevation of the peripheral valve 600, the springs 685 help to attenuate the force of the impact and protect the actuator 655. In some embodiments, the force of the springs can act as a force limiter that triggers the actuator 655 to stop the elevation of the peripheral valve 600.

[0058] Additionally, the springs 685 can help the peripheral valve 600 self-align if the contact surfaces of the choke plate and the seal ring 620 are not perfectly parallel to one another. For example, any misalignment between the contact surfaces of the choke plate and the seal ring 620 can result in the springs 685 on one base 675 and / or on one side of one or more bases 675 being compressed to a different height than the other springs 685, which can cause the second surface 623 of the seal ring 620 to deflect and / or tilt relative to its default position, thereby bringing the contact surfaces of the choke plate and the seal ring 620 parallel and allowing the peripheral valve 600 to properly seal the process space from the rest of the chamber space. To further allow deflection and / or tilting of the sealing ring 620, the base 675 can include one or more ball studs 690 that allow the base 675 to rotate and / or move vertically and / or horizontally relative to the mounting support 665 to accommodate misalignment between the contact surfaces of the choke plate and the sealing ring 620. For example, the ball portion of the ball stud 690 can be received within a socket formed in the mounting support 665 and can include a fastening portion that extends through the center of the spring 685 and through the base 675. A fastener, such as a nut, can secure the fastening portion of the ball stud 690 to the base 675. In some embodiments, the spring 685 can have a total stroke of between about 100 mils and about 500 mils to accommodate any misalignment between the choke plate and the sealing ring 620, although the amount of stroke can depend on the spring force, the design of the peripheral valve 600, and / or the tolerances of the chamber.

[0059] When elevated, the peripheral valve 600 can seal the processing region from the rest of the chamber space. This can be particularly beneficial in embodiments where multiple chambers share a common chamber space, as the elevated peripheral valve 600 allows each chamber to have its own processing region that is isolated from other processing regions during processing. Isolating the processing regions can improve operating conditions within each chamber, which can result in improved wafer quality. Additionally, the atmospheric seal bellows 680 can seal the chamber region (which may be maintained at a vacuum) from the exterior of the chamber (such as the region housing the lift mechanism 645), helping to maintain a vacuum environment within the chamber.

[0060] 7A-7C illustrate simplified schematic cross-sectional side views of an exemplary semiconductor processing chamber 700 according to some embodiments of the present technology. FIGS. 7A-7C may illustrate additional details related to components within systems 100, 200, 400, and / or chamber 500. It is understood that chamber 700, in some embodiments, may include any feature or aspect of systems 100, 200, 400, and / or chamber 500 previously described. Chamber 700 may be used to perform semiconductor processes such as deposition, removal, and cleaning steps. Chamber 700 may illustrate a partial view of the components of the discussed chamber that may be incorporated into a semiconductor processing system. Any aspect of chamber 700 may be incorporated into other processing chambers or systems, as would be readily apparent to one skilled in the art.

[0061] The chamber 700 may include a chamber body 702, which may define a transfer region and a processing region. A lid plate 705 may seat on the chamber body 702 and may support a choke plate 710. As shown, the choke plate 710 may include a rim 712 defining an opening therethrough. The rim 712 may extend along an inner sidewall of the lid plate 705 such that the rim 712 extends within the opening defined by the lid plate 705, with at least a portion of the rim 712 extending below all or a portion of the lid plate 705. In some embodiments, a liner 715, such as a pumping liner, may seat on an upper surface of the choke plate 710. A face plate 720 may be disposed on the liner 715. In some embodiments, one or more intervening components may be disposed between the face plate 720 and the liner 715.

[0062] A substrate support 725 may be disposed within the chamber body 702. The substrate support 725 may be vertically movable within the chamber body 702 between a transfer region and a processing region. The substrate support 725 may include a support plate 730, which may include a heater in some embodiments. The substrate support 725 may also include a shaft 735 that extends through the bottom of the chamber body 702 and may be connected to a radio frequency and / or other power source. A peripheral valve 740 may be disposed within the transfer region of the chamber 700 and may be located outside and / or below the substrate support 725. The peripheral valve 740 may be similar to the peripheral valves 540 and 600 described herein and may be understood to have any of the features described in connection with such peripheral valves. For example, the peripheral valve 740 may include a bottom plate 745 that may be coupled to the bottom end of the chamber body 702. The bottom plate 745 can define a central opening that can receive the shaft 735 of the substrate support 725. The peripheral valve 740 can include a chamber seal bellows 750, which can feature a first surface and a second surface that can be opposite the first surface. A bottom surface of the chamber seal bellows 750 can be coupled to an upper surface of the bottom plate 745 in some embodiments. The peripheral valve 740 can include a seal ring 755, which includes a body that defines a central opening sized to receive the shaft 735 of the substrate support 725. An upper surface of the body of the seal ring 755 can define a recess having a diameter larger than the diameter of the support plate 730 of the substrate support 725, thereby allowing a portion of the support plate 730 to be received within the recess when the substrate support 725 and the peripheral valve 740 are in the lowered position, as shown in FIG. 7A . The substrate support 725 and peripheral valve 740 can be raised from the position shown in Figure 7A to the raised processing position shown in Figure 7C. For example, a lift mechanism for the substrate support 725 can raise the substrate support 725 to the raised position, while a lift mechanism for the peripheral valve 740 (similar to lift mechanism 645) can raise the peripheral valve 740 to the raised position. The raising of the substrate support 725 and peripheral valve 740 can be sequential and / or synchronized with one another.As the peripheral valve 740 is raised, a lift rod (similar to lift rod 670) of the lift mechanism can raise the sealing ring 755 relative to the base plate 745, which can also lengthen the chamber seal bellows 750. The sealing ring 755 can be raised until its upper surface contacts the lower surface of the rim 712 of the choke plate 710, as shown in FIG. 7B , thereby preventing the peripheral valve from being raised any further. In some embodiments, several hard stops 765 (similar to hard stops 640) can be coupled to the sealing ring 755 and extend slightly above the upper surface of the sealing ring 755 to contact the lower surface of the rim 712. The upper surface of the sealing ring 755 can also include a compressible sealing element 770 that can be compressed between the upper surface of the sealing ring 755 and the lower surface of the rim 712 to seal the processing space from the remainder of the chamber space (and the slit valve) when the peripheral valve 740 is positioned as shown in FIG. 7B . This can be particularly beneficial in embodiments where multiple chambers share a common chamber space, because the elevated peripheral valve 740 allows each chamber to have its own processing region that is isolated from other processing regions during processing. Isolating the processing regions can improve operating conditions within each chamber, which can result in improved wafer quality. The substrate support 725 can continue to elevate after the peripheral valve 740 is positioned against the rim 712 of the choke plate 710. For example, the substrate support 725 can be elevated to an elevated processing position near the face plate 720, as shown in FIG. 7C . In such a processing position, the substrate support 725 can be higher than the peripheral valve 740.

[0063] 8 illustrates steps of an exemplary method 800 of substrate processing according to some embodiments of the present technique. The method can be performed in a variety of processing chambers, including processing systems 100, 200, 400, and chambers 500 and 700, which may include peripheral valves according to some embodiments of the present technique. Method 800 can include several optional steps that may or may not be specifically related to some embodiments of the method according to the present technique.

[0064] Method 800 may include optional steps before starting method 800, or the method may include additional steps. For example, method 800 may include steps performed in a different order than illustrated. In some embodiments, method 800 may include, in step 805, moving a substrate support upward within the semiconductor processing chamber from a transfer position to a process position. In step 810, a peripheral valve (e.g., peripheral valve 540, 600, 740) may be moved upward within the semiconductor processing chamber to seal the processing region from the remainder of the chamber volume (and the slit valve). The substrate support and peripheral valve may be raised in unison and / or sequentially. In some embodiments, the peripheral valve may be moved upward until its upper surface contacts the lower surface of a choke plate seated on the chamber body of the semiconductor processing chamber (which may limit the upward movement of the peripheral valve). In some embodiments, the peripheral valve may include a shock-absorbing mechanism that helps prevent damage to the lift mechanism when the peripheral valve contacts the choke plate. The peripheral valve may include a self-aligning feature that may assist in aligning the contacting surfaces of the components when the upper surface of the peripheral valve and the lower surface of the choke plate are not parallel to one another.

[0065] In step 815, one or more precursors, such as, but not limited to, a silicon-containing precursor, may be supplied to the semiconductor processing chamber. In step 820, a plasma may be generated from the precursors in the processing region, such as by supplying RF power to a faceplate to generate the plasma. In step 825, material formed in the plasma may be deposited on a substrate and / or the material may be etched.

[0066] In the foregoing description, for purposes of explanation, numerous details are set forth in order to provide an understanding of various embodiments of the present technology. However, it will be apparent to one skilled in the art that particular embodiments may be practiced without some of these details or with additional details.

[0067] Although several embodiments have been disclosed, those skilled in the art will recognize that various modifications, alternative structures, and equivalents may be used without departing from the spirit of the embodiments. Moreover, in order to avoid unnecessarily obscuring the present technology, some well-known processes and elements have not been described. Therefore, the foregoing description should not be deemed to limit the scope of the present technology. In addition, while a method or process may be described as sequential or stepwise, it should be understood that these steps may be performed simultaneously or in a different order than described.

[0068] Where a range of values ​​is given, unless the context clearly indicates otherwise, it is understood that each intervening value between the upper and lower limit of that range is specifically disclosed, to the smallest unit of the lower limit. Any narrower range between any stated or unstated intervening value in a stated range and any other stated or intervening value within that stated range is encompassed. The upper and lower limits of these narrower ranges may individually be included or excluded within the range, and each range where one or both limits are included or neither are included within the narrower range is also encompassed within the technology, subject to any specifically excluded limits in the stated range. When a stated range includes one or both limits, ranges excluding one or both of those included limits are also included.

[0069] As used in this specification and the appended claims, the singular forms "a," "an," and "the" include plural referents unless the context clearly dictates otherwise. Thus, for example, reference to "a plate" includes a plurality of such plates, reference to "the aperture" includes a reference to one or more components and equivalents known to those skilled in the art, and so forth.

[0070] Additionally, the terms "comprise(s)", "comprising", "contain(s)", "containing", "include(s)", and "including", when used in this specification and claims, are intended to specify the presence of stated features, integers, components, or steps, but do not exclude the presence or addition of one or more other features, integers, components, steps, actions, or groups.

Claims

1. 1. A substrate processing system, comprising: a chamber body defining a transfer region; a lid plate seated on the chamber body, the lid plate defining a plurality of openings therethrough; a plurality of lid stacks equal in number to the number of openings defined through the lid plate, the plurality of lid stacks at least partially defining a plurality of processing regions vertically offset from the transfer region; a plurality of substrate support assemblies equal to the number of the plurality of openings defined through the lid plate, each substrate support assembly of the plurality of substrate support assemblies being disposed within a respective one of the plurality of processing regions, each substrate support assembly of the plurality of substrate support assemblies including a support plate and a shaft coupled to a bottom of the support plate; a plurality of peripheral valves equal to the number of the plurality of openings defined through the lid plate, each peripheral valve of the plurality of peripheral valves being positioned beneath a respective one of the plurality of substrate support assemblies in a respective one of the plurality of processing regions; wherein each peripheral valve of the plurality of peripheral valves comprises: a bottom plate coupled to a lower end of the chamber body, the bottom plate being aligned with a respective one of the plurality of openings; a chamber seal bellows characterized by a first surface and a second surface opposite the first surface, the first surface of the chamber seal bellows being coupled to an upper surface of the bottom plate; and a seal ring having a body defining a central opening dimensioned to receive the shaft of a respective one of the plurality of substrate support assemblies; a bottom surface of the body coupled to an upper surface of the chamber seal bellows; an upper surface of the body defining a recess having a diameter greater than a diameter of the support plate of each one of the plurality of substrate support assemblies; the seal ring being vertically movable within the respective one of the plurality of processing regions. A substrate processing system comprising:

2. The substrate processing system of claim 1 , wherein each peripheral valve of the plurality of peripheral valves includes a shock absorbing mechanism.

3. The substrate processing system of claim 2 , wherein the shock absorbing mechanism includes a spring.

4. 10. The substrate processing system of claim 1, wherein the seal ring includes at least one hard stop disposed on an upper surface of the seal ring.

5. The substrate processing system of claim 1 , wherein each peripheral valve of the plurality of peripheral valves includes a lift mechanism disposed below the base plate.

6. 2. The substrate processing system of claim 1, wherein each lid stack of the plurality of lid stacks includes a choke plate, the choke plate being seated on the lid plate along a first surface of the choke plate and including an inner portion extending inwardly of an inner surface of the chamber body.

7. The substrate processing system of claim 6 , wherein an upper edge of the seal ring is vertically aligned with at least a portion of the inner portion of the choke plate.

8. each substrate support assembly is vertically movable within a respective one of the plurality of processing regions; The substrate processing system of claim 1 , wherein the raised position of the substrate support assembly is higher than the raised position of each one of the plurality of peripheral valves.

9. 10. The substrate processing system of claim 1, wherein the chamber seal bellows is expandable and contractible along a vertical axis of the chamber seal bellows.

10. 1. A substrate processing chamber comprising: a chamber body defining a processing region; a bottom plate coupled to a lower end of the chamber body, the bottom plate defining a central opening; a substrate support disposed within the chamber body, a support plate including a heater; a shaft coupled to the bottom of the support plate and passing through a central opening in the bottom plate; a substrate support comprising: a peripheral valve positioned below the substrate support within the processing region; wherein the peripheral valve comprises: a chamber seal bellows characterized by a first surface and a second surface opposite the first surface, the first surface of the chamber seal bellows being coupled to an upper surface of the bottom plate; and a seal ring having a body defining a central opening sized to receive the shaft of the substrate support; a bottom surface of the body coupled to an upper surface of the chamber seal bellows; an upper surface of the body defining a recess having a diameter greater than a diameter of the support plate of the substrate support; The seal ring is vertically movable within the processing region. a substrate processing chamber comprising:

11. The substrate processing chamber of claim 10 , wherein the peripheral valve comprises a plurality of atmospheric seal bellows coupled to a bottom surface of the bottom plate.

12. The substrate processing chamber of claim 10 , wherein the seal ring includes at least one hard stop disposed on an upper surface of the seal ring.

13. The substrate processing chamber of claim 12 , wherein the at least one hard stop comprises a polymeric material.

14. 11. The substrate processing chamber of claim 10, further comprising a choke plate disposed on the chamber body, the choke plate including an inner portion extending downwardly inwardly and along an inner surface of the chamber body.

15. 15. The substrate processing chamber of claim 14, wherein at least a portion of the seal ring contacts a bottom of the inner portion of the choke plate when the peripheral valve is in a raised position.

16. The substrate processing chamber of claim 15 , wherein the peripheral valve includes a shock absorbing mechanism.

17. The substrate processing chamber of claim 16 , wherein the shock-absorbing mechanism comprises a ball stud joint.

18. A substrate processing method, comprising: moving a substrate support upward from a transfer position to a processing position within a semiconductor processing chamber; moving a peripheral valve upward within the semiconductor processing chamber to seal a processing region from the remainder of the chamber volume; flowing a precursor into the semiconductor processing chamber; generating a plasma of the precursor in the processing region of the semiconductor processing chamber; Etching a material on a substrate supported on the substrate support; A substrate processing method comprising:

19. 20. The method of claim 18, wherein the peripheral valve is moved upward until an upper surface of the peripheral valve contacts a lower surface of a choke plate seated on a chamber body of the semiconductor processing chamber.

20. 20. The method of claim 19, wherein the peripheral valve is self-aligning when the upper surface of the peripheral valve contacts the lower surface of the choke plate.

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