Solar cell and its manufacturing method

Abstract

The present invention provides a solar cell and a method for manufacturing the same, comprising: a semiconductor substrate; a first transparent electrode layer provided on one side of the semiconductor substrate; and a first electrode provided on one side of the first transparent electrode layer, the first electrode comprising a first patterned layer patterned by a deposition process using a shadow mask.

Description

[Technical Field]

[0001] The present invention relates to a solar cell, and more particularly to an electrode for a solar cell. [Background technology]

[0002] A solar cell comprises a semiconductor layer and an electrode provided on a substrate.

[0003] For example, a conventional solar cell includes an n-type semiconductor layer formed on one side of a semiconductor substrate, a p-type semiconductor layer formed on the other side of the semiconductor substrate, and electrodes formed on the p-type semiconductor layer and the n-type semiconductor layer, respectively.

[0004] Conventionally, the electrodes have been formed by a photolithography process, which makes the manufacturing process complicated and reduces productivity. Summary of the Invention [Problem to be solved by the invention]

[0005] The present invention has been devised to solve the above-mentioned conventional problems, and an object of the present invention is to provide a solar cell and a manufacturing method thereof in which electrodes can be formed through a shadow mask process instead of a photolithography process. [Means for solving the problem]

[0006] To achieve the above object, the present invention provides a solar cell comprising a semiconductor substrate, a first transparent electrode layer provided on one side of the semiconductor substrate, and a first electrode provided on one side of the first transparent electrode layer, wherein the first electrode comprises a first patterned layer patterned by a deposition process using a shadow mask.

[0007] The first transparent electrode layer and the first pattern layer may each comprise a transparent oxide containing at least one of indium (In) and tin (Sn).

[0008] The first pattern layer and the first transparent electrode layer may be in contact with each other, and the indium content of the first pattern layer may be greater than the indium content of the first transparent electrode layer.

[0009] The first pattern layer and the first transparent electrode layer may be in contact with each other, and the oxygen content of the first pattern layer may be less than the oxygen content of the first transparent electrode layer.

[0010] The first electrode further includes a first seed layer provided on the first pattern layer and a first metal layer provided on the first seed layer, the seed layer being patterned by a deposition process using a shadow mask, and the first metal layer being patterned by a selective deposition process without a mask.

[0011] The first pattern layer, the first seed layer, and the first metal layer may have the same pattern as each other.

[0012] A first semiconductor layer and a second semiconductor layer may be further provided between the semiconductor substrate and the first transparent electrode layer, and the first semiconductor layer may be an intrinsic amorphous silicon layer, and the second semiconductor layer may be an n-type amorphous silicon layer.

[0013] The device may further include a perovskite solar cell disposed between the first transparent electrode layer and the first patterned layer, and the perovskite solar cell may comprise a first conductive charge transfer layer, a light absorbing layer disposed on the first conductive charge transfer layer, and a second conductive charge transfer layer disposed on the light absorbing layer.

[0014] The device may further include a third transparent electrode layer between the second conductive charge transfer layer and the first pattern layer, the third transparent electrode layer comprising a transparent oxide containing at least one of indium (In) and tin (Sn), the third transparent electrode layer and the first pattern layer being in contact with each other, the indium content of the first pattern layer being greater than the indium content of the third transparent electrode layer, and the oxygen content of the first pattern layer being less than the oxygen content of the third transparent electrode layer.

[0015] The present invention also provides a perovskite solar cell comprising a first conductive charge transfer layer, a light absorbing layer provided on the first conductive charge transfer layer, and a second conductive charge transfer layer provided on the light absorbing layer, and a solar cell comprising a first electrode provided on one side of the second conductive charge transfer layer, the first electrode comprising a first patterned layer patterned by a vapor deposition process using a shadow mask.

[0016] The device may further include a third transparent electrode layer between the second conductive charge transfer layer and the first pattern layer, and the third transparent electrode layer and the first pattern layer may each comprise a transparent oxide containing at least one of indium (In) and tin (Sn).

[0017] The first pattern layer and the third transparent electrode layer may be in contact with each other, and the indium content of the first pattern layer may be greater than the indium content of the third transparent electrode layer, and the oxygen content of the first pattern layer may be less than the oxygen content of the third transparent electrode layer.

[0018] The present invention also provides a method for manufacturing a solar cell, comprising the steps of forming a first transparent electrode layer on one side of a semiconductor substrate and forming a first electrode on the one side of the first transparent electrode layer, wherein the step of forming the first electrode comprises the step of forming a first pattern layer by a deposition process using a shadow mask, and the first transparent electrode layer and the first pattern layer are formed in succession in the same process equipment.

[0019] The first transparent electrode layer and the first pattern layer may each include a transparent oxide containing at least one of indium (In) and tin (Sn).

[0020] The process of forming the first transparent electrode layer and the first pattern layer in succession in the same process equipment may include a process of forming the first transparent electrode layer by adding a material containing Sn, a material containing oxygen, and a material containing indium in the same chamber, and then forming the first pattern layer using a shadow mask while adding the material containing Sn, the material containing oxygen (O), and the material containing indium.

[0021] The ratio of the input amount of the indium-containing material to the total input amount of materials during the process of forming the first pattern layer may be greater than the ratio of the indium-containing material to the total input amount of materials during the process of forming the first transparent electrode layer, and the ratio of the input amount of the oxygen-containing material to the total input amount of materials during the process of forming the first pattern layer may be smaller than the ratio of the oxygen-containing material to the total input amount of materials during the process of forming the first transparent electrode layer.

[0022] The process of forming the first transparent electrode layer and the first pattern layer in succession in the same process equipment can include a process of forming the first transparent electrode layer by introducing a material containing Sn and a material containing oxygen into the same chamber, and then forming the first pattern layer using a shadow mask while introducing the material containing Sn, the material containing oxygen (O), and the material containing indium.

[0023] The present invention also provides a method for manufacturing a solar cell, comprising the steps of: forming a perovskite solar cell on one side of a semiconductor substrate, the perovskite solar cell comprising a first conductive charge transfer layer, a light absorbing layer provided on the first conductive charge transfer layer, and a second conductive charge transfer layer provided on the light absorbing layer; forming a third transparent electrode layer on one side of the second conductive charge transfer layer; and forming a first electrode on one side of the third transparent electrode layer, wherein the step of forming the first electrode comprises forming the first patterned layer by a vapor deposition process using a shadow mask, and the third transparent electrode layer and the first patterned layer are formed in succession in the same process equipment.

[0024] The third transparent electrode layer and the first pattern layer may each comprise a transparent oxide containing at least one of indium (In) and tin (Sn).

[0025] The step of forming the first electrode may further include the steps of forming the first seed layer on the first pattern layer and forming the first metal layer on the first seed layer, wherein the first seed layer may be patterned by a deposition process using a shadow mask, and the first metal layer may be patterned by a selective deposition process without a mask. [Effects of the Invention]

[0026] According to the present invention as described above, the following effects are obtained.

[0027] According to one embodiment of the present invention, by forming a first electrode including a first pattern layer on a first transparent electrode layer, the first pattern layer can be formed through a shadow mask process instead of a photolithography process, thereby simplifying the manufacturing process and improving productivity.

[0028] In particular, the first transparent electrode layer and the first pattern layer can be formed in a continuous process in the same processing equipment, which further improves productivity. [Brief explanation of the drawings]

[0029] [Figure 1] 1 is a cross-sectional view of a solar cell according to an embodiment of the present invention. [Figure 2] 1 is a cross-sectional view of a solar cell according to another embodiment of the present invention. [Figure 3] 10 is a cross-sectional view of a solar cell according to still another embodiment of the present invention. [Figure 4A] FIG. 4A is a cross-sectional view showing a manufacturing process of a solar cell according to an embodiment of the present invention. [Figure 4B] FIG. 4B is a cross-sectional view showing a manufacturing process of a solar cell according to an embodiment of the present invention. [Figure 4C] FIG. 4C is a cross-sectional view showing a manufacturing process of a solar cell according to an embodiment of the present invention. [Figure 4D] FIG. 4D is a cross-sectional view showing a manufacturing process of a solar cell according to an embodiment of the present invention. [Figure 5A] FIG. 5A is a cross-sectional view showing a manufacturing process of a solar cell according to another embodiment of the present invention. [Figure 5B] FIG. 5B is a cross-sectional view showing a manufacturing process of a solar cell according to another embodiment of the present invention. [Figure 5C] FIG. 5C is a cross-sectional view showing a manufacturing process of a solar cell according to another embodiment of the present invention. [Figure 5D] FIG. 5D is a cross-sectional view showing a manufacturing process of a solar cell according to another embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0030] The advantages and features of the present invention, as well as methods for achieving them, will become more apparent from the following detailed description of the embodiments in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, and may be embodied in various different forms. These embodiments are provided solely to ensure that the disclosure of the present invention is complete and to fully convey the scope of the invention to those skilled in the art. The present invention is defined only by the claims.

[0031] The shapes, sizes, ratios, angles, numbers, etc. disclosed in the drawings for illustrating the embodiments of the present invention are merely examples, and the present invention is not limited to the details shown in the drawings. The same reference numerals refer to the same elements throughout the specification. Furthermore, in describing the present invention, if a detailed description of related prior art is deemed to unnecessarily obscure the gist of the present invention, the detailed description will be omitted. When "comprises," "has," "consists of," etc. are used in the present invention, other parts may be added unless "only" is used. When an element is expressed in the singular, the plural is also included unless otherwise explicitly stated.

[0032] When interpreting elements, they are interpreted as including a margin of error unless otherwise expressly stated.

[0033] When describing a positional relationship, for example, when describing the positional relationship of two parts using "above," "on top," "below," or "beside," one or more other parts may be located between the two parts, unless "immediately" or "directly" is used.

[0034] When describing a temporal relationship, for example, when the temporal precedence is described using "after," "following," "next to," or "before," non-consecutive cases can also be included, unless "immediately" or "directly" is used.

[0035] Although terms such as "first" and "second" are used to describe various components, these components are not limited by these terms. These terms are used merely to distinguish one component from another. Therefore, a "first" component referred to below may also be a "second" component within the technical spirit of the present invention.

[0036] The features of the various embodiments of the present invention may be partially or fully combined or combined with each other, and may be technically interlocked and driven in various ways, and each embodiment may be implemented independently of the others or may be implemented together in a linked relationship.

[0037] Preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings.

[0038] FIG. 1 is a cross-sectional view of a solar cell according to one embodiment of the present invention.

[0039] As can be seen from FIG. 1, a solar cell according to one embodiment of the present invention comprises a semiconductor substrate 100, a first semiconductor layer 210, a second semiconductor layer 220, a third semiconductor layer 230, a fourth semiconductor layer 240, a first transparent electrode layer 310, a second transparent electrode layer 320, a first electrode 410, and a second electrode 420.

[0040] The semiconductor substrate 100 may be an N-type semiconductor wafer. One side and the other side of the semiconductor substrate 100, specifically the top and bottom sides, may have a concave-convex structure. As a result, a number of layers stacked on one side of the semiconductor substrate 100 and a number of layers stacked on the other side of the semiconductor substrate 100 may have a concave-convex structure corresponding to the concave-convex structure of the semiconductor substrate 100. However, the concave-convex structure may be formed on only one of the one side and the other side of the semiconductor substrate 100, or the concave-convex structure may not be formed on both the one side and the other side of the semiconductor substrate 100.

[0041] The first semiconductor layer 210 is formed on one surface, for example, the upper surface, of the semiconductor substrate 100. The first semiconductor layer 210 is formed through a thin film deposition process, such as chemical vapor deposition (CVD) or atomic layer deposition (ALD), and may be an intrinsic semiconductor layer, for example, an intrinsic amorphous silicon layer. However, in some cases, the first semiconductor layer 210 may be a semiconductor layer doped with a trace amount of dopant, for example, a trace amount of n-type dopant, for example, an amorphous silicon layer doped with a trace amount of n-type dopant.

[0042] The second semiconductor layer 220 is formed on one surface, for example, the upper surface, of the first semiconductor layer 210. The second semiconductor layer 220 is formed through a thin film deposition process and may be made of a semiconductor layer having the same polarity as the semiconductor substrate 100 or the first semiconductor layer 210, for example, an n-type semiconductor layer. The second semiconductor layer 220 may be made of an n-type amorphous silicon layer.

[0043] The third semiconductor layer 230 is formed on another surface, for example, the bottom surface, of the semiconductor substrate 100. The third semiconductor layer 230 is formed through a thin film deposition process and may be an intrinsic semiconductor layer, for example, an intrinsic amorphous silicon layer. However, in some cases, the third semiconductor layer 230 may be an amorphous silicon layer doped with a trace amount of dopant, for example, a trace amount of p-type dopant. Here, the polarity of the dopant doped in the third semiconductor layer 230 is opposite to the polarity of the dopant doped in the first semiconductor layer 210.

[0044] The fourth semiconductor layer 240 is formed on the other surface, for example, the bottom surface, of the third semiconductor layer 230. The fourth semiconductor layer 240 is formed through a thin film deposition process and may be a semiconductor layer doped with a predetermined dopant. Here, the polarity of the dopant doped in the fourth semiconductor layer 240 is opposite to the polarity of the dopant doped in the second semiconductor layer 220. The fourth semiconductor layer 240 may be a p-type amorphous silicon layer.

[0045] The first transparent electrode layer 310 is formed on one surface, for example, the upper surface, of the second semiconductor layer 220. The first transparent electrode layer 310 is formed through a thin film deposition process such as chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition (PVD). The first transparent electrode layer 310 may be made of a transparent oxide film containing at least one of indium and tin, for example, ITO or SnO2.

[0046] The second transparent electrode layer 320 is formed on the other surface, for example, the bottom surface, of the fourth semiconductor layer 240. The second transparent electrode layer 320 may be formed through a thin film deposition process such as chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition (PVD). The second transparent electrode layer 320 may be formed of a transparent oxide film containing at least one of indium and tin, for example, ITO or SnO2. The second transparent electrode layer 320 may be formed of the same material as the first transparent electrode layer 310.

[0047] The first electrode 410 is formed on one surface, for example, the upper surface, of the first transparent electrode layer 310. Specifically, the first electrode 410 is formed on an incident surface where sunlight is incident, and therefore, to prevent the first electrode 410 from reducing the amount of incident sunlight, the first electrode 410 is patterned in a predetermined shape. The first electrode 410 may be formed with a concave-convex structure. As a result, multiple layers included in the first electrode 410 may be stacked with a concave-convex structure. However, the first electrode 410 is not limited thereto, and may not have a convex-convex structure.

[0048] The first electrode 410 may include a first pattern layer 411 , a first seed layer 412 , and a first metal layer 413 .

[0049] The first pattern layer 411 may be formed on one surface, for example, the upper surface, of the first transparent electrode layer 310 .

[0050] The first pattern layer 411 may be made of a transparent oxide film containing at least one of indium and tin, such as ITO or SnO2.

[0051] The first pattern layer 411 may be formed through a thin film deposition process such as chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition (PVD), and may be patterned using a shadow mask. Accordingly, the first transparent electrode layer 310 may be first formed through a thin film deposition process without a shadow mask, and then the first pattern layer 411 may be formed through a thin film deposition process using the shadow mask in the same process equipment. In other words, the first transparent electrode layer 310 and the first pattern layer 411 may be formed through a continuous process in the same process equipment.

[0052] Here, the indium content of the first pattern layer 411 may be greater than the indium content of the first transparent electrode layer 310 , and the oxygen content of the first pattern layer 411 may be less than the oxygen content of the first transparent electrode layer 310 .

[0053] When the indium content of the first pattern layer 411 is higher than the indium content of the first transparent electrode layer 310 and the oxygen content of the first pattern layer 411 is lower than the oxygen content of the first transparent electrode layer 310, the electrical conductivity of the first pattern layer 411 is superior to that of the first transparent electrode layer 310, thereby reducing the contact resistance between the first transparent electrode layer 310 and the first seed layer 412.

[0054] Furthermore, when the indium content of the first transparent electrode layer 310 is lower than the indium content of the first pattern layer 411 and the oxygen content of the first transparent electrode layer 310 is higher than the oxygen content of the first pattern layer 411, the light transmittance of the first transparent electrode layer 310 becomes superior to that of the first pattern layer 411, thereby increasing the amount of sunlight entering the solar cell.

[0055] The first seed layer 412 may be formed on one surface, for example, the upper surface, of the first pattern layer 411 .

[0056] The first seed layer 412 may include a conductive material, for example, at least one selected from the group consisting of indium (In), tin (Sn), tantalum (Ta), and zinc (Zn).

[0057] The first seed layer 412 is formed through a thin film deposition process such as chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition (PVD). The first seed layer 412 may be formed in the same pattern as the first pattern layer 411 through the thin film deposition process using a shadow mask. Here, the first seed layer 412 may be formed in a continuous process in the same process equipment as the first pattern layer 411. For the efficiency of such a continuous process, the first seed layer 412 may preferably contain the same material as the material contained in the first pattern layer 411, for example, indium (In) or tin (Sn).

[0058] The first metal layer 413 may be formed on one surface, for example, the upper surface, of the first seed layer 412 .

[0059] The first metal layer 413 may be made of various metal materials known in the art, and preferably includes at least one selected from the group consisting of tungsten (W), aluminum (Al), and copper (Cu).

[0060] The first metal layer 413 is formed through a thin film deposition process such as chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition (PVD). The first metal layer 413 may be formed through the thin film deposition process using a shadow mask, or through a selective deposition process known in the art without a shadow mask. When the first metal layer 413 is formed through a thin film deposition process using a shadow mask, the first metal layer 413 may be formed in a continuous process in the same process equipment as the first seed layer 412. The first metal layer 413 may be formed in the same pattern as the first seed layer 412.

[0061] In some cases, the first seed layer 412 and the first metal layer 413 may be omitted, in which case the first electrode 410 may consist of the first pattern layer 411 .

[0062] The second electrode 420 is formed on the other surface, for example, the lower surface, of the second transparent electrode layer 320. Since the second electrode 420 is formed on the surface opposite to the incident surface where sunlight is incident, it may be formed on the entire lower surface of the second transparent electrode layer 320. However, like the first electrode 410 described above, the second electrode 420 may also be patterned in a predetermined shape so that reflected sunlight can be incident into the solar cell through the second transparent electrode layer 320. The second electrode 420 may be formed with a concave-convex structure. As a result, multiple layers included in the second electrode 420 may be stacked in a concave-convex structure. However, the second electrode 420 is not limited to this, and may not have a convex-convex structure.

[0063] The second electrode 420 may include a second pattern layer 421 , a second seed layer 422 , and a second metal layer 423 .

[0064] The second pattern layer 421 may be formed on the other surface, for example, the lower surface, of the second transparent electrode layer 320 .

[0065] The second pattern layer 421, like the second transparent electrode layer 320, may be made of a transparent oxide film containing at least one of indium and tin, such as ITO or SnO2.

[0066] The second pattern layer 421 may be formed through a thin film deposition process such as chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition (PVD), and may be patterned using a shadow mask. Therefore, the second transparent electrode layer 320 may be formed first through a thin film deposition process without a shadow mask, and then the second pattern layer 421 may be formed through a thin film deposition process using the shadow mask in the same process equipment. That is, the second transparent electrode layer 320 and the second pattern layer 421 may be formed through a continuous process in the same process equipment.

[0067] Here, the indium content of the second pattern layer 421 may be greater than the indium content of the second transparent electrode layer 320 , and the oxygen content of the second pattern layer 421 may be less than the oxygen content of the second transparent electrode layer 320 .

[0068] When the indium content of the second pattern layer 421 is higher than the indium content of the second transparent electrode layer 320 and the oxygen content of the second pattern layer 421 is lower than the oxygen content of the second transparent electrode layer 320, the electrical conductivity of the second pattern layer 421 is superior to that of the second transparent electrode layer 320, thereby reducing the contact resistance between the second transparent electrode layer 320 and the second seed layer 422.

[0069] Furthermore, when the indium content of the second transparent electrode layer 320 is lower than the indium content of the second pattern layer 421 and the oxygen content of the second transparent electrode layer 320 is higher than the oxygen content of the second pattern layer 421, the light transmittance of the second transparent electrode layer 320 becomes superior to that of the second pattern layer 421, thereby increasing the amount of sunlight entering the solar cell.

[0070] The second seed layer 422 may be formed on another surface, for example, a lower surface, of the second pattern layer 421 .

[0071] The second seed layer 422 may include a conductive material, for example, at least one selected from the group consisting of indium (In), tin (Sn), tantalum (Ta), and zinc (Zn).

[0072] The second seed layer 422 is formed through a thin film deposition process such as chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition (PVD). The second seed layer 422 may be formed in the same pattern as the second pattern layer 421 through the thin film deposition process using a shadow mask. Here, the second seed layer 422 may be formed in a continuous process in the same process equipment as the second pattern layer 421. For the process efficiency of such a continuous process, it may be preferable that the second seed layer 422 contains the same material as the material contained in the second pattern layer 421, for example, indium (In) or tin (Sn).

[0073] The second metal layer 423 may be formed on the other surface, for example, the lower surface, of the second seed layer 422 .

[0074] The second metal layer 423 may be made of various metal materials known in the art, and preferably includes at least one selected from the group consisting of tungsten (W), aluminum (Al), and copper (Cu).

[0075] The second metal layer 423 is formed through a thin film deposition process such as chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition (PVD). The second metal layer 423 may be formed through the thin film deposition process using a shadow mask, or through a selective deposition process known in the art without a shadow mask. When the second metal layer 423 is formed through the thin film deposition process using a shadow mask, the second metal layer 423 may be formed in a continuous process in the same process equipment as the second seed layer 422. The second metal layer 423 may be formed in the same pattern as the second seed layer 422.

[0076] In some cases, the second seed layer 422 and the second metal layer 423 may be omitted, in which case the second electrode 420 may consist of the second pattern layer 421 .

[0077] FIG. 2 is a cross-sectional view of a solar cell according to another embodiment of the present invention.

[0078] As can be seen from FIG. 2, a solar cell according to another embodiment of the present invention may include the semiconductor substrate 100, a first semiconductor layer 210, a second semiconductor layer 220, a third semiconductor layer 230, a fourth semiconductor layer 240, a first transparent electrode layer 310, a second transparent electrode layer 320, the first electrode 410, the second electrode 420, and a perovskite solar cell 500.

[0079] The solar cell according to another embodiment of the present invention shown in Figure 2 is the same as the solar cell according to Figure 1, except for the addition of a perovskite solar cell 500. Therefore, the same reference numerals are used to refer to the same components, and only the different components will be described below.

[0080] As can be seen from FIG. 2, according to another embodiment of the present invention, a perovskite solar cell 500 is further formed between the first transparent electrode layer 310 and the first electrode 410 in the structure of FIG. 1 described above.

[0081] Therefore, the solar cell according to another embodiment of the present invention is a tandem structure solar cell including a substrate type solar cell including the semiconductor substrate 100, the first semiconductor layer 210, the second semiconductor layer 220, the third semiconductor layer 230, the fourth semiconductor layer 240, the first transparent electrode layer 310, and the second transparent electrode layer 320, and a perovskite solar cell 500 formed on the substrate type solar cell.

[0082] Here, the first transparent electrode layer 310 can function as a buffer layer between the substrate-type solar cell and the perovskite solar cell 500, eliminating the need for a separate buffer layer.

[0083] The perovskite solar cell 500 includes conductive charge transfer layers 520, 530 and a light absorbing layer 510.

[0084] The perovskite solar cell 500 may include one or more conductive charge transfer layers 520, 530. For example, the perovskite solar cell 500 may include a first conductive charge transfer layer 520 on the first transparent electrode layer 310 and in contact with the first transparent electrode layer 310, a light absorbing layer 510 provided on the first conductive charge transfer layer 520, and a second conductive charge transfer layer 530 provided on the light absorbing layer 510. However, the present invention is not limited thereto, and the conductive charge transfer layers 520, 530 may be disposed on only one of both sides of the light absorbing layer 510.

[0085] The first conductive charge transfer layer 520 may be configured to have a different polarity, for example, p-type polarity, from the second semiconductor layer 220, and the second conductive charge transfer layer 530 may be configured to have a different polarity, for example, n-type polarity, from the first conductive charge transfer layer 520. Thus, the first conductive charge transfer layer 520 may be a hole transporting layer (HTL), and the second conductive charge transfer layer 530 may be an electron transporting layer (ETL).

[0086] The hole transport layer may be comprised of various p-type organic materials known in the art, such as Spiro-MeO-TAD, Spiro-TTB, polyaniline, polypinol, poly-3,4-ethylenedioxythiophene-polystyrenesulfonate (PEDOT-PSS), poly-[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), poly(3-hexylthiophene-2,5-diyl) (P3HT), etc., or may be comprised of various p-type metal oxides known in the art, such as Ni oxide, Mo oxide, V oxide, W oxide, Cu oxide, etc., in addition to various p-type organic or inorganic compounds.

[0087] The electron transport layer may be composed of an N-type organic material such as BCP (Bathocuproine), C60, or PCBM (Phenyl-C61-butyric acid methyl ester), or various N-type metal oxides known in the art such as ZnO, c-TiO2 / mp-TiO2, SnO2, or IZO, as well as various N-type organic or inorganic compounds.

[0088] Meanwhile, the second conductive charge transfer layer 530 may be in contact with the first pattern layer 411 of the first electrode 410. In this case, the second conductive charge transfer layer 530 and the first pattern layer 411 may be formed in a continuous process in the same processing equipment, just as the first transparent electrode layer 310 and the first pattern layer 411 are formed in a continuous process in the same processing equipment in FIG. 1. For this purpose, the second conductive charge transfer layer 530 may be made of a transparent oxide film containing at least one of indium and tin, for example, ITO or SnO2. Here, the second conductive charge transfer layer 530 is formed through a thin film deposition process such as chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition (PVD).

[0089] Although not shown, a third transparent electrode layer may be further formed between the second conductive charge transfer layer 530 and the first pattern layer 411, and the third transparent electrode layer may be in contact with the first pattern layer 411. In this case, like the first transparent electrode layer 310, the third transparent electrode layer may be formed through a thin film deposition process such as chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition (PVD), and may be made of a transparent oxide film containing at least one of indium and tin, such as ITO or SnO2. Therefore, the indium content of the first pattern layer 411 may be greater than the indium content of the third transparent electrode layer, and the oxygen content of the first pattern layer 411 may be less than the oxygen content of the third transparent electrode layer.

[0090] The light absorbing layer 510 is made of a perovskite compound known in the art.

[0091] FIG. 3 is a cross-sectional view of a solar cell according to yet another embodiment of the present invention.

[0092] As can be seen from FIG. 3, a solar cell according to yet another embodiment of the present invention comprises a first electrode 410, a second electrode 420, and a perovskite solar cell 500.

[0093] The solar cell according to another embodiment of the present invention shown in FIG. 3 has a structure in which the substrate-type solar cell is removed from the solar cell of FIG. 2 described above, and has a structure in which the first electrode 410 is formed on one surface, for example, the upper surface, of a perovskite solar cell 500, and the second electrode 420 is formed on the other surface, for example, the lower surface, of the perovskite solar cell 500.

[0094] Here, the specific configurations of the first electrode 410, the second electrode 420, and the perovskite solar cell 500 may be the same as those shown in FIG. 2 above.

[0095] Although not shown, a third transparent electrode layer may be further formed between the second conductive charge transfer layer 530 and the first pattern layer 411, and the third transparent electrode layer may be in contact with the first pattern layer 411. In this case, like the first transparent electrode layer 310 described above, the third transparent electrode layer may be formed through a thin film deposition process such as chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition (PVD), and may be made of a transparent oxide film containing at least one of indium and tin, such as ITO or SnO2. Therefore, the indium content of the first pattern layer 411 may be greater than the indium content of the third transparent electrode layer, and the oxygen content of the first pattern layer 411 may be less than the oxygen content of the third transparent electrode layer.

[0096] 3, the second pattern layer 421 of the second electrode 420 contacts the first conductive charge transfer layer 520 of the perovskite solar cell 500. Here, when the first conductive charge transfer layer 520 is made of a transparent oxide film containing at least one of indium and tin, such as ITO or SnO2, the first conductive charge transfer layer 520 and the second pattern layer 421 may not be formed in a continuous process. However, when the first conductive charge transfer layer 520 is made of a transparent oxide film containing at least one of indium and tin, such as ITO or SnO2, the first conductive charge transfer layer 520 and the second pattern layer 421 are formed in a continuous process, and the indium content of the second pattern layer 421 may be greater than the indium content of the first conductive charge transfer layer 520, and the oxygen content of the second pattern layer 421 may be less than the oxygen content of the first conductive charge transfer layer 520.

[0097] 4A to 4D are cross-sectional views of a solar cell according to an embodiment of the present invention, which relate to the solar cell according to the above-described FIG. 1. Hereinafter, repeated descriptions of the same components, such as materials, will be omitted.

[0098] First, as can be seen from FIG. 4A, a first semiconductor layer 210 is formed on one surface, for example, the upper surface, of a semiconductor substrate 100, and a second semiconductor layer 220 is formed on one surface, for example, the upper surface, of the first semiconductor layer 210.

[0099] The first semiconductor layer 210 may be formed as an intrinsic semiconductor layer, for example, an intrinsic amorphous silicon layer, or a semiconductor layer doped with a trace amount of n-type dopant, for example, an amorphous silicon layer doped with a trace amount of n-type dopant, through a thin film deposition process such as chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition (PVD).

[0100] The second semiconductor layer 220 may be formed as a semiconductor layer doped with an n-type dopant, for example, an amorphous silicon layer doped with an n-type dopant, through a thin film deposition process such as chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition (PVD).

[0101] Here, the first semiconductor layer 210 and the second semiconductor layer 220 may be formed in succession in the same processing equipment. Specifically, the first semiconductor layer 210 may be formed as an intrinsic amorphous silicon layer by chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition (PVD) by introducing a Si source material into a chamber, and then the second semiconductor layer 220 may be formed as an n-type amorphous silicon layer by chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition (PVD) by further introducing an n-type dopant material into the Si source material.

[0102] Next, as can be seen from FIG. 4B, a third semiconductor layer 230 is formed on the other surface, for example, the lower surface, of the semiconductor substrate 100, and a fourth semiconductor layer 240 is formed on the other surface, for example, the lower surface, of the third semiconductor layer 230.

[0103] The third semiconductor layer 230 may be formed as an intrinsic semiconductor layer, for example, an intrinsic amorphous silicon layer, or a semiconductor layer doped with a trace amount of p-type dopant, for example, an amorphous silicon layer doped with a trace amount of p-type dopant, through a thin film deposition process such as chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition (PVD).

[0104] The fourth semiconductor layer 240 may be formed from a semiconductor layer doped with a p-type dopant, for example, an amorphous silicon layer doped with a p-type dopant, through a thin film deposition process such as chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition (PVD).

[0105] Here, the third semiconductor layer 230 and the fourth semiconductor layer 240 may be formed in succession in the same process equipment. Specifically, the third semiconductor layer 230 may be formed as an intrinsic amorphous silicon layer by chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition (PVD) by introducing a Si source material into a chamber, and then the fourth semiconductor layer 240 may be formed as a p-type amorphous silicon layer by chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition (PVD) by further introducing a p-type dopant material into the Si source material.

[0106] 4A and 4B are not necessarily performed in a particular order, that is, the step shown in FIG. 4B may be performed first, followed by the step shown in FIG.

[0107] Next, as shown in FIG. 4C, a first transparent electrode layer 310 is formed on one surface, for example, the upper surface, of the second semiconductor layer 220, and a first electrode 410 is formed on one surface, for example, the upper surface, of the first transparent electrode layer 310.

[0108] The first transparent electrode layer 310 may be formed of a transparent oxide film containing at least one of indium and tin, such as ITO or SnO2, using chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition (PVD), etc.

[0109] The process of forming the first transparent electrode layer 310 may include a process of forming ITO by introducing a material containing Sn, a material containing oxygen (O), and a material containing indium into a chamber, or a process of forming SnO2 by introducing a material containing Sn and a material containing oxygen (O) into a chamber.

[0110] The step of forming the first electrode 410 may include the steps of forming a first pattern layer 411, forming a first seed layer 412 on the upper surface of the first pattern layer 411, and forming the first metal layer 413 on the upper surface of the first seed layer 412.

[0111] The first pattern layer 411 may be formed of a transparent oxide film containing at least one of indium and tin using chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition (PVD) using a shadow mask.

[0112] The process of forming the first pattern layer 411 may comprise a process of forming ITO by putting a material containing Sn, a material containing oxygen (O), and a material containing indium into a chamber, or a process of forming SnO2 by putting a material containing Sn and a material containing oxygen (O) into a chamber.

[0113] Here, the first pattern layer 411 and the first transparent electrode layer 310 may be formed in succession in the same process equipment. For example, the first transparent electrode layer 310 may be formed by chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition (PVD) using a Sn-containing material, an oxygen (O)-containing material, and an indium-containing material in the same chamber, and then the first pattern layer 411 may be formed by chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition (PVD) using a shadow mask while the Sn-containing material, the oxygen (O)-containing material, and the indium-containing material are introduced, but in different contents from those of the first transparent electrode layer 310.

[0114] As another example, a material containing Sn and a material containing oxygen (O) may be introduced into the same chamber to form the first transparent electrode layer 310 using chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition (PVD), and then the first pattern layer 411 may be formed using chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition (PVD) while introducing the material containing Sn, the material containing oxygen (O), and the material containing indium using a shadow mask.

[0115] The ratio of the input amount of the indium-containing material to the total input amount of materials during the process of forming the first pattern layer 411 may be greater than the ratio of the indium-containing material to the total input amount of materials during the process of forming the first transparent electrode layer 310, and the ratio of the oxygen (O)-containing material to the total input amount of materials during the process of forming the first pattern layer 411 may be smaller than the ratio of the oxygen (O)-containing material to the total input amount of materials during the process of forming the first transparent electrode layer 310. As a result, the indium content of the first pattern layer 411 is greater than the indium content of the first transparent electrode layer 310, and the oxygen content of the first pattern layer 411 is less than the oxygen content of the first transparent electrode layer 310, so that the electrical conductivity of the first pattern layer 411 can be increased.

[0116] The first seed layer 412 may be formed by introducing a conductive material, such as at least one selected from the group consisting of indium (In), tin (Sn), tantalum (Ta), and zinc (Zn), using chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition (PVD) using a shadow mask.

[0117] Here, the first seed layer 412 may be formed in the same process equipment as the first pattern layer 411 using a shadow mask in a continuous process.

[0118] The first metal layer 413 is formed through a thin film deposition process such as chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition (PVD). Here, the first metal layer 413 may be formed through the thin film deposition process using a shadow mask, or through a selective deposition process known in the art without a shadow mask. When the first metal layer 413 is formed through the thin film deposition process using a shadow mask, the first metal layer 413 may be formed in a continuous process in the same process equipment as the first seed layer 412.

[0119] The first metal layer 413 may be made of various metal materials known in the art, and preferably includes at least one selected from the group consisting of tungsten (W), aluminum (Al), and copper (Cu).

[0120] Next, as can be seen from FIG. 4D, a second transparent electrode layer 320 is formed on the other surface, for example, the lower surface, of the fourth semiconductor layer 240, and a second electrode 420 is formed on the other surface, for example, the lower surface, of the second transparent electrode layer 320.

[0121] The second transparent electrode layer 320 may be formed of a transparent oxide film containing at least one of indium and tin, such as ITO or SnO2, using chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition (PVD).

[0122] The process of forming the second transparent electrode layer 320 may comprise a process of forming ITO by putting a material containing Sn, a material containing oxygen (O), and a material containing indium into a chamber, or a process of forming SnO2 by putting a material containing Sn and a material containing oxygen (O) into a chamber.

[0123] The process of forming the second electrode 420 may include the steps of forming the second pattern layer 421, forming a second seed layer 422 on the lower surface of the second pattern layer 421, and forming a second metal layer 423 on the lower surface of the second seed layer 422.

[0124] The second pattern layer 421 may be formed of a transparent oxide film containing at least one of indium and tin using chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition (PVD) using a shadow mask.

[0125] The process of forming the second pattern layer 421 may comprise a process of forming ITO by putting a material containing Sn, a material containing oxygen (O), and a material containing indium into a chamber, or a process of forming SnO2 by putting a material containing Sn and a material containing oxygen (O) into a chamber.

[0126] Here, the second pattern layer 421 and the second transparent electrode layer 320 may be formed in succession in the same process equipment. For example, the second transparent electrode layer 320 may be formed by chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition (PVD) using a Sn-containing material, an oxygen (O)-containing material, and an indium-containing material in the same chamber, and then the second pattern layer 421 may be formed by chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition (PVD) using a shadow mask while the Sn-containing material, the oxygen (O)-containing material, and the indium-containing material are introduced, but the oxygen (O)-containing material and the indium-containing material have different contents from those of the second transparent electrode layer 320.

[0127] As another example, a material containing Sn and a material containing oxygen (O) can be introduced into the same chamber and the second transparent electrode layer 320 can be formed using chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition (PVD), and then the second pattern layer 421 can be formed using chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition (PVD) while introducing the material containing Sn, the material containing oxygen (O), and the material containing indium using a shadow mask.

[0128] The ratio of the input amount of the indium-containing material to the total input amount of materials during the process of forming the second pattern layer 421 may be greater than the ratio of the indium-containing material to the total input amount of materials during the process of forming the second transparent electrode layer 320, and the ratio of the oxygen (O)-containing material to the total input amount of materials during the process of forming the second pattern layer 421 may be smaller than the ratio of the oxygen (O)-containing material to the total input amount of materials during the process of forming the second transparent electrode layer 320. As a result, the indium content of the second pattern layer 421 is greater than the indium content of the second transparent electrode layer 320, and the oxygen content of the second pattern layer 421 is less than the oxygen content of the second transparent electrode layer 320, so that the electrical conductivity of the second pattern layer 421 can be increased.

[0129] The second seed layer 422 may be formed by introducing a conductive material, such as at least one material selected from the group consisting of indium (In), tin (Sn), tantalum (Ta), and zinc (Zn), using chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition (PVD) using a shadow mask.

[0130] Here, the second seed layer 422 may be formed in the same process equipment as the second pattern layer 421 using a shadow mask in a continuous process.

[0131] The second metal layer 423 is formed through a thin film deposition process such as chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition (PVD). Here, the second metal layer 423 may be formed through the thin film deposition process using a shadow mask, or through a selective deposition process known in the art without a shadow mask. When the second metal layer 423 is formed through the thin film deposition process using a shadow mask, the second metal layer 423 may be formed in a continuous process in the same process equipment as the second seed layer 422.

[0132] The second metal layer 423 may be made of various metal materials known in the art, and preferably includes at least one selected from the group consisting of tungsten (W), aluminum (Al), and copper (Cu).

[0133] 4C and 4D are not necessarily performed in a particular order, that is, the step shown in FIG. 4D may be performed first, followed by the step shown in FIG.

[0134] In some cases, it is also possible to perform the step of FIG. 4C after the step of FIG. 4A, and then perform the steps of FIG. 4B and FIG. 4D consecutively.

[0135] 5A to 5D are cross-sectional views showing the steps of manufacturing a solar cell according to another embodiment of the present invention, which relate to the steps of manufacturing the solar cell according to FIG. 2 described above.

[0136] First, as can be seen from FIG. 5A , a first semiconductor layer 210 is formed on one surface, for example the upper surface, of a semiconductor substrate 100, a second semiconductor layer 220 is formed on one surface, for example the upper surface, of the first semiconductor layer 210, a first transparent electrode layer 310 is formed on one surface, for example the upper surface, of the second semiconductor layer 220, a first conductive charge transfer layer 520 of a perovskite solar cell 500 is formed on one surface, for example the upper surface, of the first transparent electrode layer 310, and a light absorbing layer 510 is formed on one surface, for example the upper surface, of the first conductive charge transfer layer 520.

[0137] The processes for forming the first semiconductor layer 210, the second semiconductor layer 220, and the first transparent electrode layer 310 are the same as those described above, and therefore, repeated description will be omitted.

[0138] The process of forming the first conductive charge transfer layer 520 may include a process of forming an organic hole transport layer (HTL) through a thin film deposition process such as evaporation, or a process of forming an inorganic hole transport layer (HTL) through a thin film deposition process such as chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition (PVD).

[0139] The light absorbing layer 510 may be formed by forming a perovskite compound through a solution process or a thin film deposition process such as chemical vapor deposition (CVD).

[0140] Next, as can be seen from FIG. 5B, a second conductive charge transfer layer 530 is formed on one surface, for example the upper surface, of the light absorbing layer 510 of the perovskite solar cell 500, and a first electrode 410 is formed on one surface, for example the upper surface, of the second conductive charge transfer layer 530.

[0141] The process of forming the second conductive charge transfer layer 530 may include forming an inorganic electron transport layer (ETL), particularly a transparent oxide film containing at least one of indium and tin, such as ITO or SnO, through a thin film deposition process such as chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition (PVD).

[0142] The process of forming the first electrode 410 may include the steps of forming a first pattern layer 411, forming a first seed layer 412 on the upper surface of the first pattern layer 411, and forming a first metal layer 413 on the upper surface of the first seed layer 412, each of which is similar to the steps described above. However, since the first pattern layer 411 is formed to be in contact with the second conductive charge transfer layer 530, the first pattern layer 411 and the second conductive charge transfer layer 530 may be formed in a continuous process in the same process equipment.

[0143] Although not shown, a third transparent electrode layer (not shown) may be further formed between the second conductive charge transfer layer 530 and the first pattern layer 411, and the third transparent electrode layer may be in contact with the first pattern layer 411. In this case, the third transparent electrode layer, like the first transparent electrode layer 310, may be formed through a thin film deposition process such as chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition (PVD), and may be made of a transparent oxide film containing at least one of indium and tin, such as ITO or SnO2. Therefore, the indium content of the first pattern layer 411 may be greater than the indium content of the third transparent electrode layer, and the oxygen content of the first pattern layer 411 may be less than the oxygen content of the third transparent electrode layer. The first pattern layer 411 and the third transparent electrode layer may be formed in a continuous process using the same process equipment.

[0144] Next, as can be seen from FIG. 5C, a third semiconductor layer 230 is formed on the other surface, for example, the lower surface, of the semiconductor substrate 100, and a fourth semiconductor layer 240 is formed on the other surface, for example, the lower surface, of the third semiconductor layer 230.

[0145] The process of forming the third semiconductor layer 230 and the process of forming the fourth semiconductor layer 240 are the same as those described above, and therefore, a repeated description will be omitted.

[0146] Next, as shown in FIG. 5D, a second transparent electrode layer 320 is formed on the other surface, for example, the lower surface, of the fourth semiconductor layer 240, and a second electrode 420 is formed on the other surface, for example, the lower surface, of the second transparent electrode layer 320.

[0147] The process of forming the second transparent electrode layer 320 and the process of forming the second electrode 420 are the same as those described above, and therefore, a repeated description will be omitted.

[0148] On the other hand, although not shown in the figure, first, the first semiconductor layer 210 and the second semiconductor layer 220 are sequentially formed on the upper surface of the semiconductor substrate 100, then the third semiconductor layer 230 and the fourth semiconductor layer 240 are sequentially formed on the lower surface of the semiconductor substrate 100, and then the first transparent electrode layer 310 and the first electrode 410 are sequentially formed on the upper surface of the second semiconductor layer 220. Then, the second transparent electrode layer 320 and the second electrode 420 can be sequentially formed on the lower surface of the fourth semiconductor layer 240. In this case, the structure formed on the lower surface of the semiconductor substrate 100 can be formed before the structure formed on the upper surface of the semiconductor substrate 100.

[0149] Although the present invention has been described in detail above with reference to the accompanying drawings, the present invention is not necessarily limited to these embodiments and can be embodied in various modifications without departing from the spirit and scope of the present invention. Therefore, the disclosed embodiments are intended to illustrate, rather than limit, the spirit and scope of the present invention, and the above-described embodiments should not be construed as limiting the spirit and scope of the present invention. Therefore, the above-described embodiments should be understood to be illustrative in all respects and not restrictive. The scope of the present invention should be interpreted by the scope of the claims, and all technical concepts within the scope equivalent thereto should be interpreted as being included in the scope of the present invention.

Claims

1. a semiconductor substrate; a first transparent electrode layer provided on one surface of the semiconductor substrate; a first electrode provided on one surface of the first transparent electrode layer; A solar cell comprising: the first electrode comprises a first patterned layer; the first transparent electrode layer and the first pattern layer each comprise a transparent oxide containing at least one of indium (In) and tin (Sn); the first pattern layer and the first transparent electrode layer are in contact with each other, and the indium content of the first pattern layer is greater than the indium content of the first transparent electrode layer; the pattern of the first pattern layer is different from the pattern of the first transparent electrode layer; Solar cell.

2. The oxygen content of the first pattern layer is less than the oxygen content of the first transparent electrode layer; The solar cell according to claim 1 .

3. the first electrode further includes a first seed layer provided on the first pattern layer and a first metal layer provided on the first seed layer. The solar cell according to claim 1 .

4. the first pattern layer, the first seed layer, and the first metal layer have the same pattern; The solar cell according to claim 3 .

5. a first semiconductor layer and a second semiconductor layer are further provided between the semiconductor substrate and the first transparent electrode layer; the first semiconductor layer is made of an intrinsic amorphous silicon layer, the second semiconductor layer is made of an n-type amorphous silicon layer; The solar cell according to claim 1 .

6. a perovskite solar cell comprising a first conductive charge transfer layer, a light absorbing layer disposed on the first conductive charge transfer layer, and a second conductive charge transfer layer disposed on the light absorbing layer; a first electrode disposed on one side of the second conductive charge transfer layer; A solar cell comprising: the first electrode comprises a first patterned layer; the solar cell further comprises a third transparent electrode layer between the second conductive charge transfer layer and the first patterned layer; the third transparent electrode layer and the first pattern layer each comprise a transparent oxide containing at least one of indium (In) and tin (Sn); the first pattern layer and the third transparent electrode layer are in contact with each other, and the indium content of the first pattern layer is greater than the indium content of the third transparent electrode layer; the pattern of the first pattern layer is different from the pattern of the third transparent electrode layer; Solar cell.

7. The oxygen content of the first pattern layer is less than the oxygen content of the third transparent electrode layer. The solar cell according to claim 6 .

8. Further comprising a semiconductor substrate below the perovskite solar cell, and a first transparent electrode layer between the semiconductor substrate and the perovskite solar cell. The solar cell according to claim 6 .

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