Template, template manufacturing method, and semiconductor device manufacturing method

Abstract

To provide a template capable of forming alignment marks that enable high-precision alignment.SOLUTION: A template comprises: a substrate having a first surface, a first pattern having a second surface protruding with respect to the first surface, the first pattern including a first recess and a second recess on the second surface, and a second pattern having a third surface protruding with respect to the first surface; and an optical layer in the first recess. The template has a bottom surface of the second recess exposed.SELECTED DRAWING: Figure 4

Description

[Technical Field]

[0001] FIELD Embodiments of the present invention relate to a template, a method for manufacturing a template, and a method for manufacturing a semiconductor device. [Background technology]

[0002] 2. Description of the Related Art In the manufacturing method of a semiconductor device, a technique for forming a fine pattern using nanoimprint lithography (NIL) is known. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2007-103915 [Patent Document 2] Japanese Patent Application Laid-Open No. 2013-168604 [Patent Document 3] Japanese Patent Publication No. 2021-150629 Summary of the Invention [Problem to be solved by the invention]

[0004] The problem to be solved by the present invention is to provide a template that can form an alignment mark that enables highly accurate alignment. [Means for solving the problem]

[0005] The template of the embodiment includes a substrate having a first surface, a second surface protruding from the first surface, a first pattern including a first recess and a second recess provided on the second surface, and a second pattern having a third surface protruding from the first surface, and an optical layer provided in the first recess, wherein the bottom surface of the second recess is exposed. [Brief explanation of the drawings]

[0006] [Figure 1]FIG. 10 is a schematic perspective view illustrating an example of the structure of a template. [Figure 2] 1A and 1B are schematic cross-sectional views for explaining an example of the structure of a template. [Figure 3] FIG. 10 is a schematic top view for explaining an example of the layout of the surface MS. [Figure 4] 2A to 2C are schematic cross-sectional views for explaining an example of a template according to the first embodiment. [Figure 5] 1A and 1B are schematic top views showing examples of the shape of alignment mark patterns AM. [Figure 6] 1A and 1B are schematic top views showing examples of the shape of alignment mark patterns AM. [Figure 7] 1A and 1B are schematic top views showing examples of the shape of alignment mark patterns AM. [Figure 8] 3A to 3C are schematic cross-sectional views for explaining an example of a method for manufacturing the template according to the first embodiment. [Figure 9] 3A to 3C are schematic cross-sectional views for explaining an example of a method for manufacturing the template according to the first embodiment. [Figure 10] 3A to 3C are schematic cross-sectional views for explaining an example of a method for manufacturing the template according to the first embodiment. [Figure 11] 3A to 3C are schematic cross-sectional views for explaining an example of a method for manufacturing the template according to the first embodiment. [Figure 12] 3A to 3C are schematic cross-sectional views for explaining an example of a method for manufacturing the template according to the first embodiment. [Figure 13] 3A to 3C are schematic cross-sectional views for explaining an example of a method for manufacturing the template according to the first embodiment. [Figure 14] 3A to 3C are schematic cross-sectional views for explaining an example of a method for manufacturing the template according to the first embodiment. [Figure 15] 3A to 3C are schematic cross-sectional views for explaining an example of a method for manufacturing the template according to the first embodiment. [Figure 16] 3A to 3C are schematic cross-sectional views for explaining an example of a method for manufacturing the template according to the first embodiment. [Figure 17]3A to 3C are schematic cross-sectional views for explaining an example of a method for manufacturing the template according to the first embodiment. [Figure 18] 3A to 3C are schematic cross-sectional views for explaining an example of a method for manufacturing the template according to the first embodiment. [Figure 19] 3A to 3C are schematic cross-sectional views for explaining an example of a method for manufacturing the template according to the first embodiment. [Figure 20] 3A to 3C are schematic cross-sectional views for explaining an example of a method for manufacturing the template according to the first embodiment. [Figure 21] 3A to 3C are schematic cross-sectional views for explaining an example of a method for manufacturing the template according to the first embodiment. [Figure 22] 3 is a cross-sectional view schematically illustrating an example of forming an optical layer 21 in the peripheral region. FIG. [Figure 23] 3 is a cross-sectional view schematically illustrating an example of forming an optical layer 21 in the peripheral region. FIG. [Figure 24] 10A and 10B are schematic cross-sectional views for explaining an example of a template according to a second embodiment. [Figure 25] FIG. 10 is a schematic cross-sectional view for explaining another example of the template according to the second embodiment. [Figure 26] FIG. 25 is an enlarged view of a portion of FIG. 24. [Figure 27] 1A and 1B are schematic top views showing examples of the shape of alignment mark patterns AM. [Figure 28] 10A to 10C are cross-sectional views illustrating an example of a method for manufacturing a template according to a second embodiment. [Figure 29] 10A to 10C are cross-sectional views illustrating an example of a method for manufacturing a template according to a second embodiment. [Figure 30] 10A to 10C are cross-sectional views illustrating an example of a method for manufacturing a template according to a second embodiment. [Figure 31] 10A to 10C are cross-sectional views illustrating an example of a method for manufacturing a template according to a second embodiment. [Figure 32] 10A to 10C are cross-sectional views illustrating an example of a method for manufacturing a template according to a second embodiment. [Figure 33] 10A to 10C are cross-sectional views illustrating an example of a method for manufacturing a template according to a second embodiment. [Figure 34] 10A to 10C are cross-sectional views illustrating an example of a method for manufacturing a template according to a second embodiment. [Figure 35] 10A to 10C are cross-sectional views illustrating an example of a method for manufacturing a template according to a second embodiment. [Figure 36] 10A and 10B are schematic top views for illustrating schematic cross-sectional views for illustrating an example of a method for manufacturing a template according to a second embodiment. [Figure 37] 10A to 10C are cross-sectional views illustrating an example of a method for manufacturing a template according to a second embodiment. [Figure 38] 10A to 10C are cross-sectional views illustrating an example of a method for manufacturing a template according to a second embodiment. [Figure 39] 10A to 10C are cross-sectional views illustrating an example of a method for manufacturing a template according to a second embodiment. [Figure 40] 10A to 10C are cross-sectional views illustrating an example of a method for manufacturing a template according to a second embodiment. [Figure 41] 10A to 10C are cross-sectional views illustrating an example of a method for manufacturing a template according to a second embodiment. [Figure 42] 10A to 10C are cross-sectional views illustrating an example of a method for manufacturing a template according to a second embodiment. [Figure 43] 10A to 10C are cross-sectional views illustrating an example of a method for manufacturing a template according to a second embodiment. [Figure 44] 10A to 10C are cross-sectional views illustrating an example of a method for manufacturing a template according to a second embodiment. [Figure 45] 10A to 10C are cross-sectional views illustrating an example of a method for manufacturing a template according to a second embodiment. [Figure 46] 10 is a schematic diagram for explaining the difference in the shape of the imprint material layer due to the difference in the shape of the optical layer 21. FIG. [Figure 47] 10 is a schematic diagram for explaining the difference in the shape of the imprint material layer due to the difference in the shape of the optical layer 21. FIG. [Figure 48] FIG. 10 is a schematic cross-sectional view for explaining an example of a template according to a third embodiment. [Figure 49] FIG. 10 is a schematic cross-sectional view for explaining an example of a template according to a third embodiment. [Figure 50] 10A to 10C are cross-sectional views illustrating an example of a method for manufacturing a template according to a third embodiment. [Figure 51] 10A to 10C are cross-sectional views illustrating an example of a method for manufacturing a template according to a third embodiment. [Figure 52] 10A to 10C are cross-sectional views illustrating an example of a method for manufacturing a template according to a third embodiment. [Figure 53] 10A to 10C are cross-sectional views illustrating an example of a method for manufacturing a template according to a third embodiment. [Figure 54] 1A to 1C are schematic cross-sectional views for explaining an example of a method for manufacturing a semiconductor device using NIL. [Figure 55] 1A to 1C are schematic cross-sectional views for explaining an example of a method for manufacturing a semiconductor device using NIL. [Figure 56] 1A to 1C are schematic cross-sectional views for explaining an example of a method for manufacturing a semiconductor device using NIL. [Figure 57] 1A to 1C are schematic cross-sectional views for explaining an example of a method for manufacturing a semiconductor device using NIL. DETAILED DESCRIPTION OF THE INVENTION

[0007] Hereinafter, embodiments will be described with reference to the drawings. The relationship between the thickness and planar dimensions of each component, the thickness ratio of each component, etc. shown in the drawings may differ from the actual product. Furthermore, in the embodiments, substantially identical components are designated by the same reference numerals, and descriptions thereof will be omitted as appropriate.

[0008] First Embodiment (Template structure example) Fig. 1 is a schematic perspective view illustrating an example of the structure of a template. Fig. 2 is a schematic cross-sectional view illustrating an example of the structure of a template. Figs. 1 and 2 show an X-axis, a Y-axis perpendicular to the X-axis, and a Z-axis perpendicular to both the X-axis and the Y-axis. Fig. 2 shows a part of a cross section taken along line A1-A2 shown in Fig. 1.

[0009] As shown in FIGS. 1 and 2, the template includes a substrate 1 including a surface MS called a mesa and a recess CO. FIG. 3 is a schematic top view illustrating an example layout of the surface MS, showing a portion of the XY plane of the substrate 1. The surface MS includes an alignment mark pattern AM and a device pattern DP. The alignment mark pattern AM is a pattern for forming an alignment mark used in a pattern formation method using NIL. The device pattern DP is a pattern for forming a device pattern transferred by the pattern formation method using NIL. The number, positions, and shapes of the alignment mark patterns AM and the device patterns DP are not particularly limited.

[0010] 4 is a cross-sectional schematic diagram illustrating an example of the template of the first embodiment, showing a part of the XZ cross section of the template. As shown in FIG. 4, the example of the template of the first embodiment includes a base material 1 and an optical layer 21.

[0011] The substrate 1 contains a first material having a first optical constant with respect to the light from the optical detector. The first material includes, for example, quartz. The substrate 1 is preferably transparent to the light from the optical detector.

[0012] The substrate 1 has a surface 1a, an alignment mark pattern AM, and a device pattern DP. For convenience, Fig. 4 shows the alignment mark pattern AM and the device pattern DP as being adjacent to each other, but the actual template is not limited to the above layout.

[0013] In the NIL pattern formation method, a mold (template) is pressed onto an imprint material layer such as an ultraviolet-curable resin provided on an object, and the imprint material layer is cured by irradiating it with light, transferring a device pattern DP to the imprint material layer. The object is, for example, an insulating layer formed above a semiconductor substrate such as a silicon wafer.

[0014] The alignment mark pattern AM has at least one protrusion 11, at least one recess 12a, and at least one recess 12b provided around the recess 12a. Figure 4 illustrates, as an example, an alignment mark pattern AM including a plurality of protrusions 11, a plurality of recesses 12a provided on the upper surface 111 of the protrusion 11, and a plurality of recesses 12b provided on the upper surface 111 of the protrusion 11.

[0015] The device pattern DP has at least one convex portion 13a and at least one concave portion 14. Fig. 4 illustrates, as an example, a device pattern DP having a line-and-space pattern including a plurality of convex portions 13a and a plurality of concave portions 14 provided on the upper surface 130 of the convex portion 13a.

[0016] The protrusions 11 and the recesses 12a are arranged alternately in the X-axis direction, for example. Fig. 4 shows an example in which the upper surface 130 of the protrusions 13a is higher than the upper surface 111 of the protrusions 11 relative to the surface 1a, but this is not limiting, and the upper surfaces 111 of the protrusions 11 and the upper surfaces 130 of the protrusions 13a may have the same height.

[0017] The recesses 12b are provided around the recesses 12a when viewed from the top surface of the substrate 1. The protrusions 11 and the recesses 12b are provided alternately in the X-axis direction, for example.

[0018] FIG. 4 shows an example in which the depth of recess 12a relative to the upper surface 111 is the same as the depth of recess 12b relative to the upper surface 111, but this is not limited to this, and the depth of recess 12a relative to the upper surface 111 may be different from the depth of recess 12b relative to the upper surface 111.

[0019] FIG. 4 shows an example in which the depth of recess 12a relative to upper surface 111 is shallower than the depth of recess 14 relative to upper surface 130, but this is not limited to this, and the depth of recess 12a relative to upper surface 111 may be the same as or deeper than the depth of recess 14 relative to upper surface 130.

[0020] The optical layer 21 contains a second material having a second optical constant with respect to light from the optical detector, the second optical constant being different from the first optical constant. Examples of the second material include chromium. Without being limited thereto, the second material may include at least one material selected from the group consisting of titanium, tantalum, tungsten, chromium, copper, silicon carbide, and silicon fluoride. The optical layer 21 preferably forms, for example, a light-shielding layer that reflects light from the optical detector. The provision of the optical layer 21 creates contrast between the recesses 12a and other regions, making it easier to detect the alignment mark pattern AM using the optical detector. This improves the accuracy of alignment between the template and the target.

[0021] The optical layer 21 is provided in the recess 12a but not in the recess 12b. That is, the bottom surface 121 of the recess 12a is in contact with the optical layer 21, whereas the bottom surface 122 of the recess 12b is not in contact with the optical layer 21 and forms an exposed surface. The thickness of the optical layer 21 may be smaller than the depth of the recess 12a. The optical layer 21 may be in contact with only a portion of the bottom surfaces 121 of the multiple recesses 12a.

[0022] 5, 6, and 7 are top view schematic diagrams showing examples of the shape of an alignment mark pattern AM, showing a convex portion 11, a concave portion 12a on which the optical layer 21 is formed, and a concave portion 12b on which the optical layer 21 is not formed. The alignment mark pattern AM shown in FIG. 5 has a convex portion 11, a concave portion 12a, and a plurality of concave portions 12b arranged on either side of the concave portion 12a, which are arranged in a stripe pattern. The alignment mark pattern AM shown in FIG. 6 has a convex portion 11, a plurality of concave portions 12a, and a plurality of dot-shaped concave portions 12b arranged around the plurality of concave portions 12a, which are arranged in a grid pattern. The alignment mark pattern AM shown in FIG. 7 has a plurality of convex portions 11, a plurality of concave portions 12a, and a plurality of concave portions 12b arranged around the plurality of concave portions 12a, which are arranged in an array pattern. The area of ​​the concave portions 12b on the upper surface of the substrate 1 is appropriately set depending on the alignment accuracy of the mask used to form the optical layer 21.

[0023] (Example of template manufacturing method) 8 to 21 are cross-sectional schematic views for explaining an example of a method for manufacturing a template according to the first embodiment, showing a portion of an XZ cross section of the substrate 1. The example of the method for manufacturing a template will be explained by schematically illustrating a region R1 on the substrate 1 where an alignment mark pattern AM is formed and a region R2 on the substrate 1 where a device pattern DP is formed. Each of the regions R1 and R2 shown in FIGS. 8 to 21 faces the surface 1a.

[0024] First, as shown in FIG. 8, a hard mask layer 31 is formed on the surface 1a, and then, as shown in FIG. 9, a resist mask layer 32 is formed on the hard mask layer 31.

[0025] The hard mask layer 31 functions as a hard mask for processing the substrate 1. The hard mask layer 31 contains, for example, chromium. The hard mask layer 31 can be formed by, for example, sputtering or atomic layer deposition (ALD).

[0026] The resist mask layer 32 functions as a resist mask for processing the hard mask layer 31. The resist mask layer 32 has a protrusion 32a provided in region R1 and a protrusion 32b provided in region R2. The protrusions 32a and 32b are provided in portions where the hard mask layer 31 will remain. The protrusions 32b are higher in height from the surface 1a than the protrusions 32a. The resist mask layer 32 is formed using, for example, a pattern formation method using NIL.

[0027] Next, a portion of the resist mask layer 32 is removed in the thickness direction to expose a portion of the hard mask layer 31, and the exposed portion of the hard mask layer 31 is removed as shown in FIG. 10. The resist mask layer 32 is processed so that each of the protrusions 32a and 32b partially remains. The resist mask layer 32 can be partially removed by, for example, reactive ion etching (RIE). The hard mask layer 31 can be partially removed by, for example, dry etching. The dry etching used to process the hard mask layer 31 is, for example, inductively coupled plasma (ICP)-reactive ion etching (RIE) using a mixed gas of chlorine (Cl2) gas and oxygen (O2) gas.

[0028] 11, portions of the substrate 1 are removed in the thickness direction by etching using the hard mask layer 31 and the resist mask layer 32 as masks, thereby forming protrusions 11, recesses 12a, and recesses 12b in region R1, and protrusions 13a and recesses 14 in region R2. The substrate 1 is processed by anisotropic etching, such as dry etching, to partially remove portions from surface 1a in the thickness direction of the substrate 1. The dry etching used to process the substrate 1 is, for example, inductively coupled plasma-reactive ion etching using trifluoromethane (CHF) gas.

[0029] 12, a portion of the resist mask layer 32 is removed in the thickness direction to expose a portion of the hard mask layer 31. The resist mask layer 32 is processed so that the protrusions 32a are removed and the protrusions 32b are partially left.

[0030] Next, as shown in FIG. 13, the exposed portion of the hard mask layer 31 is removed by etching using the resist mask layer 32 as a mask.

[0031] Next, the resist mask layer 32 is removed as shown in Fig. 14, and then the base material 1 is partially removed by etching using the hard mask layer 31 as a mask as shown in Fig. 15. As a result, the protrusions 13a remain protected, while the protrusions 11, the recesses 12a, 12b, and 14 are processed in the thickness direction of the base material 1.

[0032] 16, the hard mask layer 31 is removed, and then, as shown in Fig. 17, an optical layer 21 is formed to cover the surface 1a, the protrusions 11, the recesses 12a, 12b, the protrusions 13a, and the recesses 14. The optical layer 21 is formed by depositing a material applicable to the optical layer 21 on the surface 1a by, for example, reactive sputtering.

[0033] Next, as shown in FIG. 18, a resist mask layer 33 is formed on the optical layer 21. The resist mask layer 33 functions as a resist mask for processing the optical layer 21. The resist mask layer 33 has convex portions 33a provided on the concave portions 12a. The convex portions 33a are provided in portions where the optical layer 21 will remain. The resist mask layer 33 is formed using, for example, a pattern formation method using NIL.

[0034] 19, a portion of the resist mask layer 33 is removed in the thickness direction to expose a portion of the optical layer 21 while leaving the resist mask layer 33 in the recesses 12a. The resist mask layer 33 can be partially removed by, for example, reactive ion etching.

[0035] Next, as shown in FIG. 20, the exposed portions of the optical layer 21 are removed by etching using the resist mask layer 33 as a mask, thereby exposing the recesses 12b, the protrusions 13a, and the recesses 14.

[0036] Next, the resist mask layer 33 is removed as shown in Fig. 21. This completes the description of the example method for manufacturing the template of the first embodiment.

[0037] When the optical layer 21 is formed as described above, if the alignment accuracy of the convex portions 33a relative to the substrate 1 is low and the formation position of the portion where the optical layer 21 is to remain is shifted, an optical pattern having an area larger than that of the optical layer 21 formed in the concave portions 12a may be formed at the end of the alignment mark pattern AM. In this case, when the alignment mark pattern AM is detected using light from an optical detector, the pattern portion extending to the end of the alignment mark pattern AM becomes a source of bright noise light, causing a deterioration in alignment accuracy.

[0038] 22 and 23 are cross-sectional schematic diagrams showing examples of forming optical layer 21 at the end of alignment mark pattern AM. If recess 12b is not formed as shown in the comparative example of Fig. 22, and the position of the pattern of optical layer 21 is shifted, for example, in the direction of arrow A on the X axis, optical pattern portion 21a having an area larger than that of optical layer 21 formed in recess 12a is likely to be formed at the end of alignment mark pattern AM as shown in Fig. 22.

[0039] In contrast, in the template and its manufacturing method according to the first embodiment, recesses 12b are formed in which optical layer 21 is not formed. In this case, even if the position of the pattern of optical layer 21 formed in recesses 12a is shifted, as shown in Fig. 23, the shifted optical pattern portion is formed in recess 12b, and therefore it is possible to prevent optical pattern portion 21a having an area larger than that of optical layer 21 from being formed at the end of alignment mark pattern AM. This makes it possible to form an alignment mark that enables high-precision alignment.

[0040] This embodiment can be combined with other embodiments as appropriate.

[0041] <Second embodiment> (Template structure example) Similar to the template of the first embodiment, the template of the second embodiment includes a substrate 1 including a surface MS and a recess CO, and the surface MS includes an alignment mark pattern AM and a device pattern DP. Note that the description of the second embodiment can be applied as appropriate to the same parts as those of the first embodiment.

[0042] 24 is a cross-sectional schematic diagram illustrating an example of the template of the second embodiment, showing a part of the XZ cross section of the template. The example of the template of the second embodiment includes a base material 1 and an optical layer 21, similar to the first embodiment.

[0043] The alignment mark pattern AM has at least one protrusion 11 and at least one recess 12c. Figure 24 illustrates, as an example, an alignment mark pattern AM that includes a plurality of protrusions 11 and a plurality of recesses 12c.

[0044] The protrusions 11 and recesses 12c are alternately formed, for example, in the X-axis direction. As the top surface layout of the recesses 12c, for example, the layout of the recesses 12a shown in FIG.

[0045] The device pattern DP has a convex portion 13b. The convex portion 13b has a convex region 131 and a convex region 132 that protrudes further than the convex region 131. Fig. 24 illustrates, as an example, a device pattern DP including one convex portion 13b for forming a dual damascene structure in an object. In Fig. 24, the height of the convex portion 13b relative to the surface 1a is the same as the height of the convex region 132 of the convex portion 13b relative to the surface 1a.

[0046] The bottom surface 123 of the recess 12c is located deeper than the surface 1a.

[0047] The alignment mark pattern AM may have at least one convex portion 112 between a plurality of concave portions 12c as shown in Fig. 25. Fig. 25 is a cross-sectional schematic view for explaining another example of the template of the second embodiment, showing a part of the XZ cross section of the template.

[0048] The protrusions 112 are light-transmitting regions that form alignment marks. The width of the protrusions 112 in the X-axis direction is preferably greater than the width of the protrusions 11 in the X-axis direction.

[0049] The optical layer 21 is provided in the recess 12c. A bottom surface 123 of the recess 12c is in contact with the optical layer 21. The thickness of the optical layer 21 may be smaller than the depth of the recess 12a.

[0050] It is preferable that the upper surface 211 of the optical layer 21 is substantially flush with the surface 1a, as shown in Fig. 26. Fig. 26 is an enlarged view of a portion of Fig. 24. In this specification, the upper surface 211 and the surface 1a being substantially flush means, for example, that the difference in height between the upper surface 211 and the surface 1a is within ±5 nm.

[0051] As in the first embodiment, the optical layer 21 contains a second material having a second optical constant for light from the optical detector that is different from the first optical constant.

[0052] 27 is a schematic top view showing an example of the shape of an alignment mark pattern AM. The alignment mark pattern AM shown in FIG. 27 has an alignment mark pattern region AR1 and an alignment mark pattern region AR2. Each of the alignment mark pattern region AR1 and the alignment mark pattern region AR2 has a convex portion 112 surrounded by a plurality of concave portions 12c. The extending directions of the concave portions 12c are different in the alignment mark pattern region AR1 and the alignment mark pattern region AR2. The concave portions 12c in the alignment mark pattern region AR1 extend, for example, in the X-axis direction, and the concave portions 12c in the alignment mark pattern region AR2 extend, for example, in the Y-axis direction.

[0053] (Example of template manufacturing method) 28 to 45 are cross-sectional schematic views for explaining an example of a method for manufacturing a template according to the second embodiment, showing a part of the XZ cross section of the substrate 1. The example of the method for manufacturing a template will be explained by schematically illustrating a region R1 on the substrate 1 where an alignment mark pattern AM is formed and a region R2 on the substrate 1 where a device pattern DP is formed. Each of the regions R1 and R2 shown in FIGS. 28 to 45 faces the surface 1a.

[0054] First, as shown in FIG. 28, a hard mask layer 34 is formed on the surface 1a, and then, as shown in FIG. 29, a resist mask layer 35 is formed on the hard mask layer 34.

[0055] The hard mask layer 34 functions as a hard mask for processing the substrate 1. The hard mask layer 34 contains, for example, chromium. The hard mask layer 34 can be formed by, for example, sputtering or ALD.

[0056] The resist mask layer 35 functions as a resist mask for processing the hard mask layer 34. The resist mask layer 35 has a convex portion 35a provided in region R1, a concave portion 35b provided in region R1, a convex portion 35c provided in region R2, and a convex portion 35d provided in region R2. The convex portions 35a, 35c, and 35d are provided in portions where the hard mask layer 34 will remain. FIG. 29 shows an example in which the height of the convex portion 35d relative to the surface 1a is higher than that of the convex portion 35c. The resist mask layer 35 is formed using, for example, a pattern formation method using NIL.

[0057] Next, a portion of the resist mask layer 35 is removed in the thickness direction to expose a portion of the hard mask layer 34, and the exposed portion of the hard mask layer 34 is removed as shown in FIG. 30 . The resist mask layer 35 is processed so that protrusions 35a, 35c, and 35d partially remain. The resist mask layer 35 can be partially removed by, for example, reactive ion etching. The hard mask layer 34 can be partially removed by, for example, dry etching. The dry etching used to process the hard mask layer 34 is, for example, inductively coupled plasma-reactive ion etching using a mixed gas of chlorine gas and oxygen gas.

[0058] 31, the substrate 1 is partially removed by etching using the hard mask layer 34 and the resist mask layer 35 as a mask, thereby forming a convex portion 11 and a concave portion 12c in the region R1 and a convex region 132 in the region R2. The substrate 1 is processed by partially removing the surface 1a, for example, in the thickness direction of the substrate 1, by anisotropic etching such as dry etching. The dry etching used to process the substrate 1 is, for example, inductively coupled plasma-reactive ion etching using trifluoromethane gas.

[0059] 32, a portion of the resist mask layer 35 is removed in the thickness direction to remove the protrusion 35c and expose a portion of the hard mask layer 34. The resist mask layer 35 is processed so that the protrusion 35c is removed and the protrusions 35a and 35d partially remain.

[0060] Next, as shown in FIG. 33, the exposed portions of the hard mask layer 34 are removed by etching using the resist mask layer 35 as a mask.

[0061] Next, as shown in FIG. 34, the resist mask layer 35 is removed, and then, as shown in FIG. 35, a resist mask layer 36 is formed to cover the convex portions 11, the concave portions 12c, and the convex regions 132. The resist mask layer 36 functions as a resist mask for processing the substrate 1. The resist mask layer 36 has concave portions 36a at positions overlapping with the convex portions 11 and the concave portions 12c. The resist mask layer 36 is formed using, for example, a pattern formation method using NIL.

[0062] 36, a portion of the resist mask layer 36 is removed in the thickness direction to expose the recesses 12c and a portion of the hard mask layer 34 that overlaps the protrusions 11. The resist mask layer 36 can be partially removed by, for example, reactive ion etching.

[0063] 37, the base material 1 is partially removed in the thickness direction by etching using the hard mask layer 34 and the resist mask layer 36 as a mask. As a result, the recess 12c is processed in the thickness direction of the base material 1 to a position deeper than the surface 1a, while the protrusion 11 and the convex region 132 remain protected.

[0064] Next, as shown in Fig. 38, the resist mask layer 36 is removed, and then, as shown in Fig. 39, the base material 1 is partially removed in the thickness direction by etching using the hard mask layer 34 as a mask. As a result, the recessed portion 12c is processed along the thickness direction of the base material 1 while the protrusions 11 and parts of the convex regions 132 remain protected, and another part of the convex regions 132 is processed to form the convex regions 131.

[0065] Next, as shown in Fig. 40, the hard mask layer 34 is removed, and then, as shown in Fig. 41, an optical layer 21 is formed to cover the surface 1a. The optical layer 21 is formed by depositing a material applicable to the optical layer 21 on the surface 1a by, for example, reactive sputtering. The optical layer 21 is also formed on each of the protrusions 11, the recesses 12c, the convex regions 131, and the convex regions 132.

[0066] Next, as shown in FIG. 42, a resist mask layer 37 is formed on the optical layer 21. The resist mask layer 37 functions as a resist mask for processing the optical layer 21. The resist mask layer 37 has convex portions 37a provided on the concave portions 12a. The convex portions 37a are provided in portions where the optical layer 21 will remain. The resist mask layer 37 is formed using, for example, a pattern formation method using NIL.

[0067] Next, as shown in FIG. 43, a portion of the resist mask layer 37 is removed in the thickness direction to expose a portion of the optical layer 21 while leaving the resist mask layer 37 in the recesses 12c.

[0068] Next, as shown in FIG. 44, the exposed portions of the optical layer 21 are removed by etching using the resist mask layer 37 as a mask, thereby exposing the convex portions 11, the convex regions 131, and the convex regions 132.

[0069] Next, the resist mask layer 37 is removed as shown in Fig. 45. The above is a description of the example of the method for manufacturing the template of the second embodiment.

[0070] The template of the second embodiment forms the upper surface 211 of the optical layer 21 and the surface 1a so that they are approximately flush with each other, thereby allowing a pattern to be transferred to the imprint material layer by NIL using a template including an alignment mark pattern AM, and enabling the formation of an alignment mark that allows for high-precision alignment without violating design rules when forming the alignment mark using the transferred pattern.

[0071] 46 and 47 are schematic diagrams illustrating differences in the shape of the imprint material layer due to differences in the shape of the optical layer 21. If the upper surface 211 of the optical layer 21 is too high compared to the surface 1a, the height of the convex portions 102a of the layer 102, which is the imprint material layer formed opposite the concave portions 12c, will be reduced, as shown in FIG. 46. In this case, it may be difficult to form an alignment mark in the desired shape using a transfer pattern including the convex portions 102a, which may violate the design rules. Furthermore, if the upper surface 211 of the optical layer 21 is too low compared to the surface 1a, the height of the convex portions 102a of the layer 102 formed opposite the concave portions 12c will be reduced, as shown in FIG. 47, which may result in the formation of a void S. In this case, the void S has optical properties different from those of the optical layer 21 and the layer 102, which may result in a deterioration in alignment accuracy.

[0072] This embodiment can be combined with other embodiments as appropriate.

[0073] <Third embodiment> (Template structure example) Similar to the template of the second embodiment, the template of the third embodiment includes a substrate 1 including a surface MS and a recess CO, and the surface MS includes an alignment mark pattern AM and a device pattern DP. Note that the description of the second embodiment can be used as appropriate for the same parts as those of the first and second embodiments.

[0074] 48 is a cross-sectional schematic diagram illustrating an example of the template of the third embodiment, showing a part of the XZ cross section of the template. The example of the template of the third embodiment includes a base material 1 and an optical layer 21, similar to the second embodiment.

[0075] As in the second embodiment, the alignment mark pattern AM has at least one protrusion 11 and at least one recess 12c, and further has at least one recess 12d.

[0076] The protrusions 11 and the recesses 12d are alternately formed, for example, in the X-axis direction. The layout of the top surface of the recesses 12d can be the same as that of the recesses 12b shown in Figures 5, 6, and 7. The bottom surface 124 of the recesses 12d is located deeper than the surface 1a.

[0077] The device pattern DP has a convex portion 13b, similar to the second embodiment.

[0078] The alignment mark pattern AM may have convex portions 112 shown in FIG. 25 between the plurality of concave portions 12c, as in the second embodiment.

[0079] The optical layer 21 is provided in the recess 12c but not in the recess 12d. That is, the bottom surface 121 of the recess 12c is in contact with the optical layer 21, whereas the bottom surface 124 of the recess 12d is not in contact with the optical layer 21 and forms an exposed surface. The thickness of the optical layer 21 may be smaller than the depth of the recess 12c. The optical layer 21 may be in contact with only a portion of the bottom surfaces 123 of the multiple recesses 12c.

[0080] It is preferable that the upper surface 211 of the optical layer 21 is substantially flush with the surface 1a, as shown in Figure 49. Figure 49 is an enlarged view of a portion of Figure 48.

[0081] As in the third embodiment, the optical layer 21 contains a second material having a second optical constant different from the first optical constant for light from the optical detector.

[0082] The alignment mark pattern of the third embodiment may have the example shape shown in FIG. 27, similar to the second embodiment.

[0083] (Example of template manufacturing method) 50 to 53 are cross-sectional schematic views for explaining an example of a method for manufacturing a template according to the third embodiment, showing a part of the XZ cross section of the substrate 1. The example of the method for manufacturing a template will be explained by schematically illustrating a region R1 in which an alignment mark pattern AM of the substrate 1 is formed and a region R2 in which a device pattern DP of the substrate 1 is formed. Each of the regions R1 and R2 shown in FIGS. 50 to 53 faces the surface 1a.

[0084] First, except that the recess 12d is formed in the same process as the recess 12c, the protrusion 11, the recess 12c, the protrusion 13b, and the optical layer 21 are formed through the processes of Figures 28 to 41 in the same manner as in the second embodiment. The description of the method for forming the recess 12c can be used as appropriate for the method for forming the recess 12d.

[0085] Next, as shown in FIG. 50, a resist mask layer 37 is formed on the optical layer 21. The resist mask layer 37 functions as a resist mask for processing the optical layer 21. The resist mask layer 37 has convex portions 37a provided on the concave portions 12c. The convex portions 37a are provided in the portions where the optical layer 21 will remain. In FIG. 50, the convex portions 37a do not overlap the concave portions 12d in the Z-axis direction. The resist mask layer 37 is formed using, for example, a pattern formation method using NIL.

[0086] Next, as shown in FIG. 51, a portion of the resist mask layer 37 is removed in the thickness direction to expose a portion of the optical layer 21 while leaving the resist mask layer 37 in the recesses 12c.

[0087] Next, as shown in FIG. 52, the exposed portions of the optical layer 21 are removed by etching using the resist mask layer 37 as a mask, thereby exposing the convex portions 11, the convex regions 131, and the convex regions 132.

[0088] Next, the resist mask layer 37 is removed as shown in Fig. 53. This completes the description of the example method for manufacturing the template of the third embodiment.

[0089] In the template and manufacturing method thereof according to the third embodiment, the optical layer 21 is not formed in the recess 12d. In this case, even if the position of the optical layer 21 is shifted, it is possible to prevent the optical layer 21 from protruding beyond the edge of the alignment mark pattern AM. This makes it possible to form an alignment mark that allows for high-precision alignment, similar to the first embodiment.

[0090] Furthermore, in the template and manufacturing method thereof of the third embodiment, as in the second embodiment, the upper surface 211 of the optical layer 21 and the surface 1a are formed to be approximately flush with each other, so that a pattern can be transferred to the imprint material layer by NIL using a template including an alignment mark pattern AM, and an alignment mark that allows for high-precision alignment can be formed without violating design rules when forming the alignment mark using the transferred pattern.

[0091] This embodiment can be combined with other embodiments as appropriate.

[0092] <Fourth embodiment> 54 to 57 are schematic cross-sectional views for explaining an example of a method for manufacturing a semiconductor device using NIL.

[0093] 54, the position of the processing surface of the target object 100 is aligned with the position of the pattern forming surface of the template 101, which is placed opposite the processing surface. The above positions can be aligned, for example, by relatively adjusting the position of the alignment mark pattern AM of the template 101 and the position of the alignment mark pattern provided on the target object 100.

[0094] The target object 100 is, for example, a laminate formed by laminating a plurality of films on a semiconductor substrate. The configuration of the target object 100 is not particularly limited.

[0095] The template 101 is a template manufactured by any one of the manufacturing methods according to the first to third embodiments. Figure 54 illustrates the template 101 manufactured by the template manufacturing method according to the second embodiment as an example.

[0096] The layer 102 is formed by applying an imprint material to the processing surface before or after the alignment. The imprint material includes, for example, a photocurable resin. The imprint material is applied by, for example, dropping or spin coating.

[0097] Next, as shown in Figure 55, the template 101 is pressed against the layer 102 to shape the layer 102, and the formed layer 102 is hardened, thereby transferring the device pattern DP and the alignment mark pattern AM to the layer 102. Before hardening the layer 102, precise alignment between the target object 100 and the template 101 is performed with the template 101 pressed against the layer 102. If the device pattern DP has, for example, a convex region 131 and a convex region 132, the hardened layer 102 has a pattern for forming a dual damascene structure, as shown in Figure 55.

[0098] When the layer 102 contains a photocurable resin, the layer 102 is cured by irradiating it with light through the template 101. The template 101 is separated from the layer 102 after the layer 102 has cured.

[0099] 56, a portion of the object 100 is processed using the layer 102 to form, for example, an opening 100a. The object 100 is processed by partially removing the stacked layers that make up the object 100 by, for example, dry etching. The shape of the object 100 after processing is determined by the shape of the device pattern DP.

[0100] 57, a film (film to be processed) is formed on the object 100, and the film is processed to form a layer 151 in the opening 100a. The layer 151 is a conductive layer containing, for example, a metal material. The layer 151 functions as, for example, an embedded wiring.

[0101] As described above, in the example of the semiconductor device manufacturing method of this embodiment, a template manufactured by any one of the manufacturing methods of the first to third embodiments is used to form a coating layer on an object and transfer the device pattern DP. Therefore, for example, a semiconductor device can be manufactured without forming an unnecessary metal layer, thereby suppressing a decrease in the performance of the semiconductor device.

[0102] Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be embodied in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included within the scope and spirit of the invention, and are also included in the scope of the invention and its equivalents as defined in the claims. [Explanation of symbols]

[0103] 1...substrate, 1a...surface, 11...protruding portion, 12a...recess, 12b...recess, 12c...recess, 12d...recess, 13...protruding portion, 13a...protruding portion, 13b...protruding portion, 14...recess, 21...optical layer, 31...hard mask layer, 32...resist mask layer, 32a...protruding portion, 32b...protruding portion, 33...resist mask layer, 33a...protruding portion, 34...hard mask layer, 35...resist mask layer, 35a...protruding portion, 35b...recess, 35c...protruding portion, 35d...protruding portion portion, 36...resist mask layer, 36a...recess, 37...resist mask layer, 37a...protruding portion, 100...object, 100a...opening, 100b...opening, 101...template, 102...layer, 102a...protruding portion, 111...top surface, 112...protruding portion, 121...bottom surface, 122...bottom surface, 123...bottom surface, 124...bottom surface, 130...top surface, 131...protruding region, 132...protruding region, 140...bottom surface, 150...layer, 151...layer, 211...top surface.

Claims

1. A first surface; a first pattern including, in a first region, a plurality of first protrusions, each having a second surface protruding from the first surface, and arranged periodically; a first recess provided between a pair of adjacent first protrusions in a central portion of the first region; and a second recess provided between a pair of adjacent first protrusions in an outer periphery of the first region; a second pattern having a third surface protruding from the first surface in a second region different from the first region; a substrate having an optical layer provided in the first recess; Equipped with The template, wherein the bottom surface of the second recess is exposed.

2. the first pattern includes a plurality of the first recesses and a plurality of the second recesses; The template of claim 1 , wherein the plurality of second recesses are provided around the plurality of first recesses.

3. The template according to claim 1 , wherein the first pattern is a pattern of an alignment mark.

4. A template described in any one of claims 1 to 3, wherein the first surface is flat.

5. A first surface; a first pattern including, in a first region, a plurality of first protrusions, each having a second surface protruding from the first surface, and arranged periodically; a first recess provided between a pair of adjacent first protrusions in a central portion of the first region; and a second recess provided between a pair of adjacent first protrusions in an outer periphery of the first region; a second pattern having a third surface protruding from the first surface in a second region different from the first region; providing a substrate having forming an optical layer covering the first recess and the second recess; a step of partially removing the optical layer to expose a bottom surface of the second recess and leave the optical layer in the first recess; A method for manufacturing a template, comprising:

6. A method for manufacturing a template as described in claim 5, wherein the first surface is flat.

7. a step of pressing the template according to claim 1 against a layer formed by applying an imprint material to a film to be processed on a substrate to mold the layer, and then hardening the molded layer, thereby transferring the second pattern to the layer; A method for manufacturing a semiconductor device, comprising:

8. A first surface; a first pattern including, in a first region, a plurality of first protrusions, each having a second surface protruding from the first surface, and arranged periodically; a first recess provided between a pair of adjacent first protrusions in a central portion of the first region; and a second recess provided between a pair of adjacent first protrusions in an outer periphery of the first region; a second pattern having a third surface protruding from the first surface in a second region different from the first region; a substrate having an optical layer provided in the first recess and having an exposed surface that is substantially flush with the first surface; Equipped with The template, wherein the bottom surface of the second recess is exposed.

9. The template according to claim 8 , wherein the first pattern is a pattern of an alignment mark.

10. A template as described in claim 8 or claim 9, wherein the first surface is flat.

11. forming a first mask covering a portion of a first region of a substrate and a portion of a second region of the substrate that is different from the first region; by processing another part of the first region and another part of the second region using the first mask, A first surface; a first pattern including, in the first region, a plurality of first protrusions, each having a second surface protruding from the first surface, and arranged periodically; a first recess provided between a pair of adjacent first protrusions in a central portion of the first region; and a second recess provided between a pair of adjacent first protrusions in an outer periphery of the first region; a second pattern having a third surface protruding from the first surface in the second region; Forming forming a second mask covering the first surface while leaving the first mask in place; processing the first recess and the second recess using the first mask and the second mask so that they are recessed below the first surface; forming an optical layer having an exposed surface that is substantially flush with the first surface in the first recess and the second recess; the optical layer is partially removed to expose a bottom surface of the second recess and to leave the optical layer in the first recess. Method for manufacturing the template.

12. A method for manufacturing a template as described in claim 11, wherein the first surface is flat.

13. a step of pressing the template according to claim 8 against a layer formed by applying an imprint material to a film to be processed on a substrate to mold the layer, and then hardening the molded layer, thereby transferring the second pattern to the layer; A method for manufacturing a semiconductor device, comprising:

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