Semiconductor processing device and its process chamber and tray detection method

Abstract

This application discloses a semiconductor process apparatus, its process chamber, and a method for detecting a tray. The process chamber includes a process chamber body, a tray, a first heater, a rotating shaft assembly, and an infrared thermometer. The first heater includes a first heating plate. The tray is rotatably provided on the upper surface of the first heating plate. The rotating shaft assembly includes a rotating shaft and a temperature marking member. The rotating shaft is inserted into the first heating plate and rotatably engaged with the first heating plate. By connecting the first end of the rotating shaft to the tray, the rotating shaft can rotate together with the tray. The second end of the rotating shaft extends and protrudes from the bottom surface of the first heating plate. The temperature marking member is provided at the second end of the rotating shaft and can rotate together with the rotating shaft. The infrared thermometer is used to detect the temperature of the rotating temperature marking member at a predetermined temperature detection position, thereby periodically obtaining the temperature of the temperature marking member.

Description

[Technical Field]

[0001] This application relates to the field of semiconductor manufacturing technology, and more particularly to semiconductor process equipment and process chambers and tray detection methods. [Background technology]

[0002] In the manufacturing process of semiconductor wafers, the epitaxial growth process is a very important factor, which is to grow a single crystal layer on the surface of the wafer with certain requirements in the same crystal direction as the wafer, thereby expanding the crystal on the wafer surface.

[0003] In the related art, an epitaxial growth apparatus includes a tray, an upper heater, and a lower heater. The tray is located between the upper and lower heaters and is jointly heated by the upper and lower heaters. The tray has a rotation function, which allows the wafers placed on the tray to be uniformly heated by rotation. Because the upper and lower heaters are covered with thermal insulation felt, an infrared pyrometer cannot be directly attached above the tray to detect the tray temperature. Because the tray temperature and rotation speed are closely related to the uniformity of the wafer epitaxial film, the epitaxial growth apparatus is equipped with a temperature sensor to detect the tray temperature and a speed sensor to detect the tray rotation speed. However, the temperature sensor and speed sensor make the structure of the epitaxial growth apparatus too complicated. Summary of the Invention [Problem to be solved by the invention]

[0004] The present application discloses a semiconductor processing device, a processing chamber, and a tray detection method, which can simultaneously detect the temperature and rotation speed of the tray, thereby simplifying the structural layout of the device. [Means for solving the problem]

[0005] In order to solve the above problems, the present application adopts the following technical solutions.

[0006] In a first aspect, the present application provides a process chamber for a semiconductor process device, comprising: a process chamber body, a tray provided in the process chamber body, a first heater, a rotating shaft assembly, and an infrared thermometer provided outside the process chamber body, wherein the first heater comprises a first heating plate, the tray is rotatably provided on the upper surface of the first heating plate, the rotating shaft assembly comprises a rotating shaft and a temperature marking member, the rotating shaft is inserted into the first heating plate and rotatably engaged with the first heating plate, a first end of the rotating shaft is connected to the tray so that the rotating shaft can rotate together with the tray, a second end of the rotating shaft extends and protrudes from the bottom surface of the first heating plate, the temperature marking member is provided at the second end of the rotating shaft and can rotate together with the rotating shaft, and the infrared thermometer is used to detect the temperature of the temperature marking member rotated to a predetermined temperature detection position, thereby periodically obtaining the temperature of the temperature marking member.

[0007] In a second aspect, the present application provides a semiconductor processing apparatus including a process chamber according to the first aspect of the present application.

[0008] In a third aspect, the present application provides a tray detection method, which is applied to the process chamber described in the first aspect of the present application, and the detection method includes the steps of: starting the infrared thermometer; and when the temperature mark member rotates to the predetermined temperature detection position, periodically receiving the temperature of the temperature mark member detected by the infrared thermometer as the temperature of the tray; comparing the temperatures of all the temperature mark members acquired within the detection time and determining the stability of the tray temperature based on the temperatures of all the temperature mark members; and calculating the number of rotations of the tray based on the number of times the tray temperature is acquired per unit time. [Effects of the Invention]

[0009] The technical solutions used in this application can achieve the following beneficial effects:

[0010] In the semiconductor processing apparatus and process chamber thereof disclosed herein, a first end of the rotating shaft is connected to the tray, and a second end of the rotating shaft extends and protrudes from the bottom surface of the first heating plate, thereby ensuring that the tray is rotatably engaged with the first heating plate by the rotating shaft. The temperature marking member is provided at the second end of the rotating shaft and can rotate circumferentially together with the rotating shaft.

[0011] When detecting the temperature of the tray, as the temperature mark member rotates, the infrared thermometer can periodically detect the temperature of the temperature mark member at a predetermined temperature detection position, thereby periodically acquiring the temperature of the tray, and further determining the stability of the tray temperature from the temperatures of all temperature mark members acquired within the detection time, thereby accurately measuring the temperature of the tray and simultaneously detecting the heating environment.

[0012] At the same time, when detecting the number of rotations of the tray, the number of rotations of the tray can be calculated based on the number of times the tray temperature is acquired per unit time.

[0013] Compared with the related art, the infrared thermometer of the present application can not only be used to detect the tray temperature, but also as a tray rotation speed detection device, thus eliminating the need to add a separate speed measurement device, thereby effectively simplifying the structural layout of the device. [Brief explanation of the drawings]

[0014] The drawings described herein are used to provide a further understanding of the present application, constitute a part of the present application, and the illustrative embodiments and description thereof are used to explain the present application and are not to be construed as unduly limiting the present application.

[0015] [Figure 1] 1 is a cross-sectional view of a process chamber disclosed in an embodiment of the present application. [Figure 2] 10A and 10B are diagrams illustrating the engagement relationship between a tray and a rotating shaft disclosed in an embodiment of the present application. [Figure 3]1 is a structural schematic diagram of a first heating plate disclosed in an embodiment of the present application. [Figure 4] 3A to 3C are diagrams illustrating the operation principle of the process chamber disclosed in the embodiment of the present application in different operating states. [Figure 5] 3A to 3C are diagrams illustrating the operation principle of the process chamber disclosed in the embodiment of the present application in different operating states. [Figure 6] 1 is a diagram showing the relationship between temperature and time detected by an infrared thermometer disclosed in an embodiment of the present application. [Figure 7] FIG. 2 is a cross-sectional view of a first heating plate disclosed in an embodiment of the present application. [Figure 8] FIG. 2 is a plan view of a first heating plate disclosed in an embodiment of the present application. [Figure 9] 9 is a cross-sectional view taken along the arrow AA in FIG. 8. [Figure 10] 1 is a structural schematic diagram of a tray disclosed in an embodiment of the present application. [Figure 11] FIG. 2 is a partially enlarged view of FIG. DETAILED DESCRIPTION OF THE INVENTION

[0016] In order to clarify the objectives, technical solutions and advantages of the present application, the following will clearly and completely describe the technical solutions of the present application with reference to specific embodiments of the present application and corresponding drawings. Obviously, the described embodiments are only some of the embodiments of the present application, and not all of the embodiments. Based on the embodiments of the present application, all other embodiments that a person skilled in the art can obtain without creative work fall within the scope of protection of the present application.

[0017] In related technology, a temperature measurement hole that opens toward the axial direction of the heating body is opened in the upper heating body, and the infrared thermometer indirectly obtains the temperature of the tray by detecting the temperature of the temperature measurement hole. However, since the tray is heated jointly by the upper and lower heating bodies, it is also necessary to monitor the stability of the environmental temperature of the lower heating body, thereby indirectly obtaining the temperature of the tray.

[0018] The technical solutions disclosed in each embodiment of the present application will be described in detail below with reference to the drawings.

[0019] To solve the technical problem of the complicated structure caused by providing a temperature measuring device and a rate measuring device in the epitaxial growth apparatus of the related art, an embodiment of the present application provides a process chamber of a semiconductor processing apparatus.

[0020] 1 to 11 , the process chamber disclosed in the embodiments of the present application includes a process chamber body 100, a tray 200, a first heater, a rotating shaft assembly 400, and an infrared thermometer 500. The process chamber body 100 is a basic component of the process chamber and can provide a mounting base. Specifically, the tray 200, the first heater, and the rotating shaft assembly 400 are installed within the process chamber body 100. A process space S is formed within the process chamber body 100, and the process space S provides a processing environment for wafers to be processed. In addition, to maintain a high-temperature processing environment within the process chamber body 100, the process chamber further includes a thermal felt installed outside the process chamber body 100. An induction coil is installed around the thermal felt. The induction coil inductively heats the first heater, and the first heater further provides a high-temperature processing environment within the tray 200 and the process chamber body 100.

[0021] The tray 200 is used to place wafers to be processed, i.e., the tray 200 holds the wafers during processing. During processing, the wafers need to be in a high temperature state. For example, in a silicon epitaxial growth process, the temperature of the processing environment can reach 1500-1800°C. To ensure a stable high-temperature processing environment, the processing space S is heated by a heater.

[0022] In the embodiment of the present application, the tray 200 is rotatably mounted on the upper surface of the first heating plate 300, that is, the two can realize relative rotation.

[0023] The rotating shaft assembly 400 includes a rotating shaft 410 and a temperature marking member 420. The rotating shaft 410 is inserted into the first heating plate 300 and rotatably engaged with the first heating plate 300. A first end of the rotating shaft 410 is connected to the tray 200, allowing the rotating shaft 410 to rotate together with the tray 200. A second end of the rotating shaft 410 extends and protrudes from the bottom surface of the first heating plate 300.

[0024] Specifically, the first heating plate 300 can provide a mounting function for the tray 200, and the tray 200 and the rotating shaft 410 can achieve synchronous movement, allowing the tray 200 to rotate relative to the first heating plate 300 via the rotating shaft 410. Because the rotating shaft 410 is inserted into the first heating plate 300, there is a positional restriction relationship between the rotating shaft 410 and the first heating plate 300, thereby optimizing the attachment reliability between the tray 200 and the first heating plate 300. Furthermore, a receiving groove 370 may be formed on the upper surface of the first heating plate 300, and the receiving groove 370 is used to mount the tray 200, further optimizing the attachment reliability of the tray 200. The receiving groove 370 is preferably a circular groove.

[0025] Furthermore, since the second end of the rotating shaft 410 extends and protrudes from the bottom surface of the first heating plate 300, the term "protruding" here means that the second end of the rotating shaft 410 extends outside the bottom surface of the first heating plate 300, and the bottom surface of the first heating plate 300 is separated from the process space S, that is, the second end of the rotating shaft 410 extends outside the process space S but is still located within the process chamber body 100; specifically, see Figures 1 to 3.

[0026] In this embodiment, the temperature marking member 420 is provided at the second end of the rotating shaft 410 and can rotate together with the rotating shaft 410, and the infrared thermometer 500 is used to detect the temperature of the temperature marking member 420, and the temperature marking member 420 is used to be detected by the infrared thermometer 500 when rotated to a predetermined temperature detection position, thereby periodically obtaining the temperature of the temperature marking member 420.

[0027] As can be seen, the infrared thermometer 500 is installed outside the process chamber body, thus avoiding damage from high temperatures caused by installation inside the chamber. The infrared thermometer 500 can detect the temperature of the temperature mark member 420 rotated to a predetermined temperature detection position, for example, through a detection window installed in the process chamber body 100. When measuring the temperature of the tray 200, since there is a thermal conduction relationship between the rotating shaft 410 and the tray 200, the infrared energy radiated from the second end of the rotating shaft 410 can be directly detected by the infrared thermometer 500, i.e., the temperature of the tray 200 can be indirectly detected. This significantly improves the detection accuracy of the temperature of the tray 200 compared to the related art solution of indirectly obtaining the tray temperature by detecting the temperature of a heater. In the embodiment of the present application, the temperature marking member 420 is provided at the second end of the rotating shaft 410, so that the infrared thermometer 500 can realize temperature detection for the tray 200 in the process space S by detecting the temperature of the temperature marking member 420 outside the process space S, and at the same time can also perform environmental temperature detection for the first heating element.

[0028] The temperature marking member 420 rotates circumferentially in accordance with the rotation of the rotating shaft 410 and the tray 200. In this way, the temperature marking member 420 can periodically rotate to a predetermined temperature detection position which is a position corresponding to the infrared thermometer 500, so that the infrared thermometer 500 can periodically detect the temperature of the temperature marking member 420, thereby periodically acquiring the temperature of the tray, and further, determine the stability of the temperature of the tray 200 from the temperatures of all the temperature marking members 420 acquired within the detection time, thereby accurately measuring the temperature of the tray 200.

[0029] At the same time, when detecting the rotational speed of the tray 200, the rotational speed of the tray 200 can be calculated based on the number of times the temperature of the tray 200 is acquired per unit time.

[0030] Specifically, when the tray 200 is rotating, the temperature mark member 420 passes through a predetermined temperature detection position during rotation, and each pass records one acquisition count. The number of acquisitions by the infrared thermometer 500 for the temperature of the temperature mark member 420 can be represented by the detected temperature data. Specifically, as shown in Figure 6, in the relationship diagram between the temperature detected by the infrared thermometer 500 and time, the sudden change in temperature detected by the infrared thermometer 500 may be a sudden change from a peak temperature to a bottom temperature, or a sudden change from a bottom temperature to a peak temperature, and here, the number of times the peak temperature is recorded within the detection time is the acquisition count.

[0031] In this structural layout, the circumferential area of ​​the second end of the rotating shaft 410 is equally divided by the temperature marking member 420, and if the temperature marking member 420 is a single unitary structure, the circumferential area of ​​the second end of the rotating shaft 410 is the entire area of ​​360°. In this way, if the number of times the temperature marking member 420 acquires temperature per unit time can be detected, the number of equally divided areas that rotate can be obtained, and the sum of the number of these equally divided areas represents the rotation speed of the rotating shaft 410, and thus the rotation speed of the tray 200.

[0032] The process chamber further includes a control system, which includes a reading unit, and the reading unit can read the number of times the tray 200 is detected per unit time, which is the number of times the temperature detected by the infrared thermometer 500 is detected per unit time, and then the control system calculates the number of rotations of the tray 200 based on the number of times. For ease of calculation, the control system can treat the complete peak temperature section and bottom temperature section as one calculation unit.

[0033] Specifically, the ratio of the number of acquisitions to the number of mark structures (e.g., blades) included in the temperature mark member 420 is multiplied by 2π to obtain the rotation angle of the tray 200 per unit time, thereby obtaining the rotation speed of the tray 200. The above calculation can be made by referring to the formula ω=2nπ / mT, where ω is the angular velocity of the tray 200, n is the number of acquisitions, and m is the number of mark structures (e.g., blades) included in the temperature mark member 420.

[0034] Compared with the related art, the infrared thermometer 500 of the embodiment of the present application can not only be used to detect the temperature of the tray 200, but also serve as a device for detecting the rotation speed of the tray 200, thus eliminating the need for a separate speed measuring device, thereby effectively simplifying the structural layout of the device. In the embodiment of the present application, the specific type of the temperature marking member 420 is not limited, and for example, the temperature marking member 420 may include a bump or the like provided on the circumferential sidewall of the second end of the rotating shaft 410.

[0035] In another embodiment, as shown in FIGS. 1 to 5, the temperature marking member 420 may include a plurality of blades 421, and the plurality of blades 421 may be arranged on a rotating shaft. 410 are arranged evenly along the circumferential direction.

[0036] In such a structural layout, the detection path of the infrared thermometer 500 is offset from the rotation axis 410, and at the detection path of the infrared thermometer 500, which is a predetermined temperature detection position, the blades 421 rotate to that position in sequence and the temperature is detected by the infrared thermometer 500, which is the peak temperature, specifically refer to Figure 5; when the detection path of the blades 421 and the infrared thermometer 500 is offset, the temperature detected by the infrared thermometer 500 is the bottom temperature, specifically refer to Figure 4.

[0037] As shown in Figures 2 and 11, the temperature marking member 420 includes an impeller 422 mounted on the second end of the rotating shaft 410, the impeller 422 is fitted onto the rotating shaft 410, and the blades 421 are connected to the impeller 422 and distributed along the circumferential direction. A fastener 401 may be mounted on the second end of the rotating shaft 410, thereby restricting the position of the impeller 422 by the fastener 401.

[0038] In an alternative embodiment, as shown in FIGS. 8 to 10 , a gas flow path is provided in a first heating plate 300, and the gas flow path includes an exhaust flow path 350, which is used to transport a driving gas. The first heating plate 300 includes an exhaust port 302 provided on its upper surface, which is connected to the exhaust flow path 350 and provided corresponding to the tray 200. The tray 200 includes a driving unit 210 provided on its bottom surface, and the driving gas sent out through the exhaust port 302 pushes the driving unit 210, thereby rotating the tray 200.

[0039] In this structural layout, the driving gas introduced into the gas flow path can be discharged through the exhaust path 350 and the exhaust port 302. The driving gas exerts a driving force on the bottom surface of the tray 200. The driving gas drives the driving unit 210, thereby rotating the tray 200. As can be seen, the tray 200 of the present embodiment employs a gas-driven solution, thereby avoiding the drawback of conventional solutions that use a motor to drive the tray 200, such as poor high-temperature resistance. Furthermore, the structural layout between the tray 200 and the first heating plate 300 ensures that the driving force of the driving gas on the tray 200 has a vertical component, which can lift the tray 200 by a certain distance, thereby separating the tray 200 from the first heating plate 300 and thereby achieving rotation of the tray 200. The driving force of the driving gas on the tray 200 also has a horizontal component, which can drive the tray 200 to rotate.

[0040] The embodiments of the present application do not limit the specific structure of the actuator 210, and it may be a groove or a protrusion. When the actuator 210 is a groove, the driving gas presses against the groove wall to provide the driving action, and when the actuator 210 is a protrusion, the driving gas presses against the side wall of the protrusion to provide the driving action.

[0041] 10 , the driving section 210 is a strip-shaped groove, and the strip-shaped groove has a long extension length, thereby increasing the area over which the driving gas acts on the strip-shaped groove wall, thereby improving driving efficiency. To further optimize the driving effect of the driving gas on the strip-shaped groove, multiple driving sections 210 may be provided, thereby further increasing the area over which the driving gas acts. Each strip-shaped groove may be configured to be inclined around the rotation axis 410, thereby increasing the driving effect of the driving gas along the circumferential direction of the tray 200. Furthermore, multiple strip-shaped grooves may be configured to be inclined in the same direction, thereby avoiding interference caused by strip-shaped grooves arranged in opposite directions and advantageously allowing the driving gas to provide a driving effect in the same direction.

[0042] Furthermore, the plurality of band-shaped grooves are provided symmetrically around the center of the tray 200 .

[0043] When the driving part 210 is a groove, the driving part 210 may be selected as a spiral groove. When the driving part 210 is a protrusion, the driving part 210 may be a ridge, a spiral protrusion, etc.

[0044] 8, the first heating plate 300 includes at least three exhaust ports 302, which are evenly distributed around the central axis of the tray 200. In this layout, based on the principle that three points form a surface, the driving gas sent out from the at least three exhaust ports 302 can form at least three working areas on the bottom surface of the tray 200, which obviously can effectively improve the driving stability and reliability of the tray 200 compared with the solutions of one working area and two working areas.

[0045] The number of exhaust ports 302 is not specifically limited in the embodiment of the present application, and may be one, two, four, five, etc., other than the three shown in FIG.

[0046] In an alternative embodiment, as shown in FIGS. 7 to 9 , the gas flow path further includes an intake flow path, one end of which is connected to an external gas source and the other end of which is connected to an exhaust flow path, thereby transporting a drive gas into the exhaust flow path. The intake flow path is arranged in a horizontal plane, and the exhaust flow path 350 is arranged at an angle relative to the vertical. In this structural layout, the exhaust flow path 350 is arranged at an angle relative to the vertical, so that the drive gas transported in the intake flow path can be transported upward and discharged through the exhaust port 302 in the horizontal plane, and the exhaust direction and the tray 200 form a predetermined angle, thereby rotating the tray 200. Of course, the embodiment of the present application does not limit the specific relationship between the exhaust flow path 350 and the intake flow path. The exhaust flow path 350 can also be an arc-shaped flow path, which can transport the drive gas transported in the horizontal plane and discharge it upward through the exhaust port 302, and the exhaust direction and the tray 200 form a predetermined angle.

[0047] In this structural layout, the exhaust flow path 350 is a straight flow path, and the axis of the exhaust flow path 350 is collinear with the axis of the exhaust port 302. A straight flow path is easy to directly process and mold, which makes it easy to set the inclination angle of the axis of the exhaust flow path relative to the central axis of the tray 200, thereby engaging with the drive part 210 on the bottom of the tray 200 and optimizing the driving effect of the drive gas.

[0048] Here, the included angle between the axis of the exhaust channel 350 and the central axis of the tray 200 is a, and this included angle is an obtuse angle, which directly affects the inclination of the exhaust channel 350. Specifically, this included angle may be 120°, 130°, 140°, etc.

[0049] Furthermore, the intake channel includes an inlet sub-channel, a distribution sub-channel, and a plurality of transport sub-channels, a first end of the inlet sub-channel is connected to an external gas source, a second end of the inlet sub-channel is connected to the inlet end of the distribution sub-channel, the distribution sub-channel has a plurality of exhaust ends, the inlet ends of the plurality of transport sub-channels are connected to the inlet ends of the plurality of distribution sub-channels in a one-to-one correspondence, at least three exhaust ports 302 are opened on the upper surface of the first heating plate, the exhaust channel 350 includes at least three exhaust sub-channels, each exhaust sub-channel is connected to a respective exhaust port 302 in a one-to-one correspondence, and the exhaust end of each transport sub-channel is connected to one of the exhaust sub-channels. In this structural layout, an external gas source can deliver drive gas into the inlet sub-channels, and the drive gas can be uniformly distributed through the distribution sub-channels. The drive gas is then delivered to each of the multiple delivery sub-channels, and then further delivered to the exhaust sub-channels connected to the delivery sub-channels, and finally delivered through the exhaust ports 302 connected to the exhaust sub-channels. This structural layout can prevent drive gases with different compositions from being delivered from different exhaust ports 302, thereby optimizing the uniformity of the driving action of the drive gas on the tray 200.

[0050] In a preferred embodiment, as shown in FIGS. 7 to 9 , the intake channel includes an inlet subchannel 310, a distribution subchannel 320, a first transport subchannel 330, and a second transport subchannel 340. The inlet subchannel 310 extends in a first horizontal direction (i.e., the vertical direction in FIG. 7 ). The distribution subchannel 320 extends perpendicular to the first horizontal direction (i.e., perpendicular to the vertical direction in FIG. 7 ). A first end of the inlet subchannel 310 is connected to an external gas source via the inlet port 301. A second end of the inlet subchannel 310 is connected to the distribution subchannel 320, for example, to the central intake end of the distribution subchannel 320. This ensures that the driving gas flowing through the distribution subchannel 320 travels the same distance to the two exhaust ends of the distribution subchannel 320 after being split. There are two transport sub-channels, the first transport sub-channel 330 and the second transport sub-channel 340, which are connected to the two exhaust ends of the distribution sub-channel 320, respectively. The first transport sub-channel 330 and the second transport sub-channel 340 are arranged symmetrically with respect to the feed sub-channel 310. One end of each of the distribution sub-channel 320, the first transport sub-channel 330, and the second transport sub-channel 340 is provided with a through-hole 303 on the outer surface of the first heating plate 300, and each of the through-holes 303 is provided with a sealing material 304. There are three exhaust ports 302, which are evenly distributed circumferentially around the central axis of the tray 200. There are three exhaust sub-channels, namely, first exhaust sub-channel 305, second exhaust sub-channel 306, and third exhaust sub-channel 307. The first exhaust sub-channel 305 is connected to the feed sub-channel 310, the second exhaust sub-channel 306 is connected to the first transport sub-channel 330, and the third exhaust sub-channel 307 is connected to the second transport sub-channel 340. The first exhaust sub-channel 305, the second exhaust sub-channel 306, and the third exhaust sub-channel 307 are connected to the three exhaust ports 302 in a one-to-one correspondence, respectively.

[0051] In this structural layout, an external gas source can deliver the drive gas into the inlet sub-channel 310, and the drive gas can be uniformly distributed through the distribution sub-channel 320, and then the drive gas is delivered to the first delivery sub-channel 330 and the second delivery sub-channel 340, respectively. In the inlet sub-channel 310, the drive gas can be delivered through the first exhaust sub-channel 305 and the corresponding exhaust port 302, and in the first delivery sub-channel 330, the drive gas can be delivered through the second exhaust sub-channel 306 and the corresponding exhaust port 302, and the drive gas can be delivered through the second delivery sub-channel 340. 340 In this case, the drive gas can be delivered through the third exhaust sub-channel 307 and the corresponding exhaust port 302. This structural layout can avoid delivering drive gases with different compositions from different exhaust ports 302, thereby optimizing the uniformity of the drive action of the drive gas on the tray 200.

[0052] The through-holes 303 allow for easy processing of the distribution sub-channel 320, the first transport sub-channel 330, and the second transport sub-channel 340, and the sealant 304 ensures airtightness of the distribution sub-channel 320, the first transport sub-channel 330, and the second transport sub-channel 340. The sealant 304 may be a gas channel plug, a seal rubber, or the like.

[0053] Of course, the present embodiment does not limit the specific method for forming the intake channel in the first heating plate 300. In another embodiment, the first heating plate 300 may include a first sub-heating plate and a second sub-heating plate, and the lower surface of the first sub-heating plate and the upper surface of the second sub-heating plate each have an opposing intake groove. When the first sub-heating plate and the second sub-heating plate are combined, the opposing intake grooves form a complete feed sub-channel 310, a distribution sub-channel 320, a first transport sub-channel 330, and a second transport sub-channel 340. In this structural layout, the aforementioned through-hole 303 does not need to be provided.

[0054] In an alternative embodiment, the axes of the at least three exhaust ports 302 are all tilted around the rotation axis 410 in the same direction. With this arrangement, when the driving gas discharged from the exhaust ports 302 enters the bottom surface of the tray 200, it forms an included angle with the bottom surface of the tray 200, thereby ensuring that the driving action of the driving gas on the tray 200 has vertical and horizontal components. The vertical component can drive the tray 200 to float, and the horizontal component can act on the drive unit 210 to rotate the tray 200.

[0055] In addition, since the inclination directions of the axes of the exhaust ports 302 are the same, it is possible to ensure that the axes of these exhaust ports 302 have the same inclination characteristics, which makes it easier for the driving action of the horizontal components of the driving gases respectively discharged from different exhaust ports 302 on the tray 200 to be consistent, thereby optimizing the driving effect.

[0056] 2 and 11, the process chamber further includes a sleeve 600. The first heating plate 300 has a through-hole 360 ​​penetrating its top and bottom surfaces. The sleeve 600 is fitted over the rotating shaft 410 and disposed between the rotating shaft 410 and the wall of the through-hole 360. When installed in this manner, the sleeve 600 can support the rotating shaft 410 and the wall of the through-hole 360, thereby preventing distortion of the rotating shaft 410. The rotating shaft 410 is typically made of a wear-resistant material, thereby reducing wear on the rotating shaft 410.

[0057] 11, a first annular stepped groove 361 is provided in the through hole 360, and the sleeve 600 is provided in the first annular stepped groove 361. In this structural layout, the first annular stepped groove 361 provides an accommodation space for the sleeve 600, thereby improving the compactness of the structure. The stepped surface of the first annular stepped groove 361 can support and position the sleeve 600.

[0058] Furthermore, as shown in Figures 8, 10 and 11, a second annular stepped groove 362 is further provided within the through hole 360, and the first annular stepped groove 361 and the second annular stepped groove 362 are arranged from top to bottom along the through hole 360, and the tray 200 includes an annular engaging portion 220 provided on its bottom surface, which is fitted outside the sleeve 600 and provided within the second annular stepped groove 362.

[0059] In this structural layout, the through hole 360 ​​is a multi-step hole, the second annular stepped groove 362 provides an accommodation space for the annular engagement portion 220, and the annular engagement portion 220 is subjected to the radial inward positioning restriction action of the sleeve 600, and further subjected to the radial outward positioning restriction action of the groove side wall of the second annular stepped groove 362, thereby optimizing the positioning action relative to the tray 200.

[0060] In an alternative embodiment, the process chamber further includes a second heating element 700, a first end cap, and a second end cap, wherein the first heating element further includes a first arc-shaped heating element connected to the first heating plate 300, the second heating element 700 includes a second heating plate and a second arc-shaped heating element, the first heating element and the second heating element are arranged opposite each other, the first end cap is fitted onto a first end of the first heating element and a first end of the second heating element 700, the second end cap is fitted onto a second end of the first heating element and a second end of the second heating element 700, the first heating element and the second heating element are arranged opposite each other, and a process space S is formed between them.

[0061] Specifically, the first heating plate 300 is connected to the first arc-shaped heating element and surrounds it to form a semicircular first heating element penetrating along the axial direction, forming a first heating chamber between the first heating plate and the first arc-shaped heating element. The second heating plate is connected to the second arc-shaped heating element and surrounds it to form a semicircular second heating element 700 penetrating along the axial direction, forming a second heating chamber between the second heating plate and the second arc-shaped heating element. The temperature marking element 420 is installed in the first heating chamber, and the infrared thermometer 500 can detect the infrared radiation energy generated by the temperature marking element 420 in the first heating chamber, thereby detecting the temperature of the temperature marking element 420 and not only realizing detection of the temperature of the tray 200, but also detecting the environmental temperature in the first heating chamber of the first heating element.

[0062] In an embodiment of the present application, the process chamber includes a first heating plate 300 and a second heating plate arranged opposite each other, a tray 200 is positioned in the process space S between the first heating plate 300 and the second heating plate, and an induction coil is arranged around the outside of the first heating element 300 and the second heating element 700, and the induction coil may be configured to inductively heat the first heating element 300 and the second heating element 700, which can improve the temperature uniformity in the environment in which the tray 200 is located and is advantageous for improving the epitaxial growth quality of the wafers W.

[0063] The present embodiment further provides a semiconductor processing apparatus, which includes a process chamber as described in any of the above-mentioned solutions, and thus the semiconductor processing apparatus has the beneficial effects of any of the above-mentioned solutions, and the description thereof will be omitted here. Optionally, the semiconductor processing apparatus of the present embodiment may be an epitaxial growth apparatus, and of course, may also be a semiconductor heat treatment apparatus that needs to detect the temperature and rotation speed of a tray.

[0064] An embodiment of the present application further provides a tray 200 detection method, which is applicable to the process chambers mentioned in any of the above solutions and is used to detect the temperature and rotation speed of the tray 200. The detection method includes step S100 of starting the infrared thermometer 500 and periodically receiving the temperature of the temperature marking element 420 detected by the infrared thermometer 500 as the temperature of the tray 200 when the temperature marking element 420 rotates to a predetermined temperature detection position; step S200 of comparing all temperatures of the temperature marking element 420 acquired within the detection time and determining the stability of the temperature of the tray 200 based on the comparison result; and step S300 of calculating the rotation speed of the tray 200 based on the number of times the temperature of the tray 200 is acquired per unit time.

[0065] In this embodiment, the temperature marking member 420 is provided at the second end of the rotating shaft 410. Therefore, when the rotating shaft 410 rotates together with the tray 200, the temperature marking member 420 rotates in a circumferential direction along with the rotation of the rotating shaft 410 and the tray 200. At a predetermined temperature detection position, the infrared thermometer 500 can periodically detect the temperature of the temperature marking member 420, thereby periodically acquiring the temperature of the tray 200. Furthermore, the stability of the temperature of the tray 200 can be determined from the temperatures of all the temperature marking members 420 acquired within the detection time, thereby accurately measuring the temperature of the tray 200.

[0066] At the same time, when detecting the rotational speed of the tray 200, the rotational speed of the tray 200 can be calculated based on the number of times the temperature of the tray 200 is acquired per unit time.

[0067] Specifically, when the tray 200 is rotating, the temperature mark member 420 passes through a predetermined temperature detection position during rotation, and each pass records one acquisition count. The number of acquisitions by the infrared thermometer 500 for the temperature of the temperature mark member 420 can be represented by the detected temperature data. Specifically, as shown in Figure 6, in the relationship diagram between the temperature detected by the infrared thermometer 500 and time, the sudden change in temperature detected by the infrared thermometer 500 may be a sudden change from a peak temperature to a bottom temperature, or a sudden change from a bottom temperature to a peak temperature, and here, the number of times the peak temperature is recorded within the detection time is the acquisition count.

[0068] The ratio of the number of acquisitions to the number of mark structures (e.g., blades) included in the temperature mark member 420 can be multiplied by 2π to obtain the rotation angle of the tray 200 per unit time, thereby obtaining the rotation number of the tray 200. The above calculation can be made by referring to the formula ω=2nπ / mT, where ω is the angular velocity of the tray 200, n is the number of acquisitions, and m is the number of mark structures (e.g., blades) included in the temperature mark member 420.

[0069] Compared with the related art, the infrared thermometer 500 of the embodiment of the present application can not only be used to detect the temperature of the tray 200, but can also be used as a device for detecting the rotation speed of the tray 200, thus eliminating the need for a separate speed measurement device, which effectively simplifies the structural layout of the device.

[0070] The above embodiments of the present application have focused on the differences between each embodiment. As long as the different optimization features between each embodiment are consistent, they can be combined to form a more preferred embodiment. For the sake of brevity, the description will be omitted here.

[0071] The above is merely an example of the present application and is not intended to limit the present application. Those skilled in the art can make various modifications and variations to the present application. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present application should be included within the scope of the claims of the present application. [Explanation of symbols]

[0072] 100 Process chamber body 200 trays 210 Drive unit 220 Annular engagement portion 300 1st heating plate 310 Inlet sub-channel 320 Distribution sub-channel 330 First Transport Subchannel 340 Second Transport Subchannel 350 exhaust flow path 360 through hole 361 First annular stepped groove 362 Second annular stepped groove 370 Storage Groove 301 Air intake 302 Exhaust port 303 Through hole 304 Sealing material 305 First exhaust sub-passage 306 Second exhaust sub-passage 307 Third exhaust sub-passage 400 Rotating shaft assembly 410 Rotational Axis 420 Temperature marking material 421 Feather 422 Impeller 401 Fasteners 500 Infrared Thermometer 600 sleeves 700 Second heating element S process space

Claims

1. A process chamber of a semiconductor process device, a process chamber body, a tray provided in the process chamber body, a first heater, a rotating shaft assembly, and an infrared thermometer provided outside the process chamber body; the first heating element includes a first heating plate; the tray is rotatably mounted on the upper surface of the first heating plate, the rotating shaft assembly includes a rotating shaft and a temperature marking member, the rotating shaft is inserted into the first heating plate and rotatably engaged with the first heating plate, a first end of the rotating shaft is connected to the tray so that the rotating shaft can rotate together with the tray, and a second end of the rotating shaft extends and protrudes from a bottom surface of the first heating plate; A process chamber of a semiconductor process device, characterized in that the temperature mark member is provided at the second end of the rotating shaft and can rotate together with the rotating shaft, and the infrared thermometer is used to detect the temperature of the temperature mark member rotated to a predetermined temperature detection position, thereby periodically obtaining the temperature of the temperature mark member.

2. 2. The process chamber according to claim 1, wherein the temperature marking member includes a plurality of vanes, the vanes being uniformly arranged along the circumferential direction of the rotation shaft.

3. 2. The process chamber of claim 1, wherein a gas flow path is provided within the first heating plate, the gas flow path including an exhaust flow path, the exhaust flow path being used to transport a driving gas; an exhaust port is opened on an upper surface of the first heating plate, the exhaust port is connected to the exhaust flow path and provided corresponding to the tray; the tray includes a driving unit provided on a bottom surface of the tray, and the driving gas sent out through the exhaust port can push the driving unit to rotate the tray.

4. 4. The process chamber according to claim 3, wherein at least three exhaust ports are opened in the upper surface of the first heating plate, and the at least three exhaust ports are evenly distributed along a circumferential direction of the central axis of the tray.

5. 4. The process chamber of claim 3, wherein the gas flow path further includes an intake flow path, one end of the intake flow path being connected to an external gas source and the other end of the intake flow path being connected to the exhaust flow path to transport the driving gas into the exhaust flow path, the intake flow path being arranged in a horizontal plane, and the exhaust flow path being inclined relative to the vertical direction.

6. the intake channel includes an inlet sub-channel, a distribution sub-channel and a plurality of transport sub-channels, a first end of the inlet sub-channel is connected to the external gas source, a second end of the inlet sub-channel is connected to an intake end of the distribution sub-channel, the distribution sub-channel has a plurality of exhaust ends, and the intake ends of the plurality of transport sub-channels are connected to the plurality of intake ends of the distribution sub-channels in a one-to-one correspondence; 6. The process chamber of claim 5, wherein at least three exhaust ports are formed on the upper surface of the first heating plate, the exhaust flow path includes at least three exhaust sub-flow paths, each of the exhaust sub-flow paths being connected to one of the exhaust ports in a one-to-one correspondence, and the exhaust end of each of the transport sub-flow paths being connected to one of the exhaust sub-flow paths.

7. the inlet sub-channel extends along a first horizontal direction, the extension direction of the distribution sub-channel is perpendicular to the first horizontal direction, and a second end of the inlet sub-channel communicates with an intake end of the distribution sub-channel; the first heating plate has a through-hole at one end thereof, the first heating plate has a through-hole at one end thereof, and the second heating plate has a through-hole at one end thereof, the first heating plate has a through-hole at one end thereof, and the second heating plate has a through-hole at one end thereof.

7. The process chamber of claim 6, wherein the exhaust ports are three and uniformly distributed around the central axis of the tray; the exhaust sub-channels are three, each of which is a first exhaust sub-channel, a second exhaust sub-channel, and a third exhaust sub-channel; the first exhaust sub-channel is connected to the feed sub-channel, the second exhaust sub-channel is connected to the first transport sub-channel, and the third exhaust sub-channel is connected to the second transport sub-channel; and the first exhaust sub-channel, the second exhaust sub-channel, and the third exhaust sub-channel are connected to the three exhaust ports in a one-to-one correspondence, respectively.

8. 2. The process chamber of claim 1, further comprising a sleeve, wherein the first heating plate has a through hole penetrating its top surface and bottom surface, a first annular stepped groove formed in the through hole, and the sleeve is fitted onto the outside of the rotation shaft and positioned within the first annular stepped groove.

9. 9. The process chamber of claim 8, wherein a second annular stepped groove is further provided within the through hole, the first annular stepped groove and the second annular stepped groove are arranged in order from bottom to top along the through hole, the tray includes an annular engaging portion provided on the bottom surface of the tray, and the annular engaging portion is fitted outside the sleeve and provided within the second annular stepped groove.

10. the process chamber further includes a second heating element, a first end cap, and a second end cap, the first heating element further includes a first arc-shaped heating element connected to the first heating plate, a first heating chamber being formed between the first heating plate and the first arc-shaped heating element, the second heating element includes a second heating element and a second arc-shaped heating element, a second heating chamber being formed between the second heating plate and the second arc-shaped heating element, and the first heating element and the second heating element are disposed opposite each other; 2. The process chamber of claim 1, wherein the first end cap is fitted onto a first end of the first heating element and a first end of the second heating element, the second end cap is fitted onto a second end of the first heating element and a second end of the second heating element, the first heating plate and the second heating plate are arranged opposite each other, and a process space is formed therebetween.

11. A semiconductor processing device comprising the process chamber according to any one of claims 1 to 10.

12. A tray detection method applied to the process chamber according to any one of claims 1 to 10, comprising: activating the infrared thermometer, and periodically receiving the temperature of the temperature marking member detected by the infrared thermometer as the temperature of the tray when the temperature marking member rotates to the predetermined temperature detection position; comparing the temperatures of all the temperature marking elements acquired within a detection time and determining the stability of the temperature of the tray based on the comparison results; and calculating the number of rotations of the tray based on the number of times the temperature of the tray is acquired per unit time.

Images