Semiconductor manufacturing equipment and holding equipment

Abstract

To make occurrence of an abnormal discharge in a semiconductor manufacturing apparatus less than before while securing sealability.SOLUTION: A metal member 30 is bonded to another member through a seal member S1, and comprises an opposed face facing the other member and a recessed part 34 which is recessed from the opposed surface and in which a seal member S1 is arranged, wherein the recessed part 34 comprises a bottom wall part 35 and a pair of side wall parts 36 connecting both edges of the bottom wall part 35 to the opposed surface, the opposed surface, the bottom wall part 35 and the pair of side wall parts 36 have an alumite layer AL, and the bottom wall part 35 comprises a silicone layer SL on the alumite layer AL at the bottom wall part 35.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] The present disclosure relates to a metal member, a semiconductor manufacturing apparatus, and a holding device. [Background technology]

[0002] One example of a holding device is an electrostatic chuck described in Patent Document 1. This electrostatic chuck includes a support body having an electrode therein and supporting a substrate, a cooling base coupled to the support body and controlling the temperature of the support body, and a facility plate coupled to the cooling base. The electrostatic chuck is placed in a processing chamber for plasma processing of a substrate.

[0003] A groove for placing a seal (O-ring) is formed on the underside of the cooling base. The seal placed in this groove is compressed between the cooling base and the facility plate, preventing fluid passage between the cooling base and the facility plate. The seal is placed so as to surround the area connecting the electrostatic chuck to devices located outside the processing chamber (e.g., an electrode power supply, a coolant supply device, a gas supply device, etc.). This prevents outside air from entering the processing chamber. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Publication No. 2020-13993 Summary of the Invention [Problem to be solved by the invention]

[0005] In the above-described processing chamber, it is known that the high-frequency power applied during plasma processing can cause unintended abnormal discharge (arcing) in the gas flow path of the electrostatic chuck. When abnormal discharge occurs, the processing quality of the substrate deteriorates, resulting in a decrease in yield. To reduce the occurrence of abnormal discharge, the surface of the cooling base is usually insulated by anodizing or the like.

[0006] However, conventionally, the inner walls of the grooves in which the seals are placed have not been anodized. This is because it is difficult to reduce the surface roughness of the inner walls of anodized grooves. If the surface roughness of the inner walls of the grooves is high, a gap will form between the seal and the inner walls of the grooves, making it impossible to ensure the sealing of the processing chamber. As a result, the metal is exposed on the inner walls of the grooves, and no measures have been taken to prevent abnormal discharge.

[0007] The present disclosure was completed in light of the above circumstances, and aims to reduce the occurrence of abnormal discharge in semiconductor manufacturing equipment compared to conventional methods while ensuring sealing performance. [Means for solving the problem]

[0008] The metal member of the present disclosure is a metal member that is joined to another member via a sealing member, and comprises an opposing surface that faces the other member, and a recess that is recessed from the opposing surface and has the sealing member disposed inside, the recess comprising a bottom wall portion and a pair of side wall portions that connect both side edges of the bottom wall portion to the opposing surface, the opposing surface, the bottom wall portion, and the pair of side wall portions have a barrier layer, and the bottom wall portion comprises a silicone layer on the barrier layer of the bottom wall portion. [Effects of the Invention]

[0009] According to the present disclosure, in a semiconductor manufacturing apparatus, it is possible to ensure sealing performance while reducing the occurrence of abnormal discharge compared to conventional methods. [Brief explanation of the drawings]

[0010] [Figure 1] FIG. 1 is a perspective view schematically illustrating the external configuration of an electrostatic chuck according to a first embodiment. [Figure 2] FIG. 2 is a cross-sectional view schematically showing the connection between the electrostatic chuck and the chamber in the semiconductor manufacturing apparatus according to the first embodiment. [Figure 3] FIG. 3 is an enlarged cross-sectional view schematically illustrating the periphery of a recess according to the first embodiment. [Figure 4] FIG. 4 is an enlarged cross-sectional view schematically showing the periphery of a recess according to a comparative example. [Figure 5] FIG. 5 is a cross-sectional view schematically showing the connection between the electrostatic chuck and the mounting plate in the semiconductor manufacturing apparatus according to the second embodiment. [Figure 6] FIG. 6 is a cross-sectional view schematically showing the bonding between the metal member and the ceramic member in the electrostatic chuck according to the third embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0011] [Description of the embodiments of the present disclosure] First, embodiments of the present disclosure will be listed and described. (1) The metal member of the present disclosure is a metal member that is joined to another member via a sealing member, and includes an opposing surface that faces the other member, and a recess that is recessed from the opposing surface and has the sealing member disposed therein. The recess includes a bottom wall portion and a pair of side wall portions that connect both side edges of the bottom wall portion to the opposing surface. The opposing surface, the bottom wall portion, and the pair of side wall portions have a barrier layer, and the bottom wall portion includes a silicone layer on the barrier layer of the bottom wall portion.

[0012] Since the recessed portion is provided with the barrier layer, when the metal member is used in a semiconductor manufacturing device, arcing can be suppressed in the recessed portion.

[0013] The barrier layer on the bottom wall of the recess is recessed from the opposing surface, making it difficult to perform polishing or other processes, resulting in high surface roughness. When the bottom wall of the recess has high surface roughness, even if the sealing member is compressed between the bottom wall and another member, a gap may form between the sealing member and the bottom wall, resulting in an insufficient seal at the joint between the metal member and the other member. In such cases, air leaks into the vacuum system of the semiconductor manufacturing equipment. However, with the above-described configuration, the bottom wall includes a silicone layer covering the barrier layer, allowing the silicone layer to adhere to the sealing member. Therefore, no gap forms between the bottom wall and the sealing member, ensuring the seal at the joint between the metal member and the other member. This prevents air leaks into the vacuum system of the semiconductor manufacturing equipment.

[0014] (2) The maximum height Rz of the surface of the silicone layer is preferably 60 μm or less.

[0015] According to the above configuration, the silicone layer and the sealing member are more likely to adhere to each other, which further ensures the sealing performance of the sealing member. Note that the maximum height Rz (JIS B0601:2013) is one of the parameters that indicate surface roughness.

[0016] (3) The silicone layer preferably has a hardness of 10 or more and 60 or less in Shore A hardness.

[0017] The silicone layer has a hardness of 10 or more and 60 or less on the Shore A hardness scale, which makes it relatively softer than, for example, a metal member or a barrier layer, making it easy to adhere the silicone layer to the sealing member. Furthermore, when the sealing member is compressed between the bottom wall and another member, the reaction force from the sealing member acting on the bottom wall can be alleviated. Because the reaction force from the sealing member can be alleviated, the range of choices for the hardness of the sealing member can be expanded.

[0018] (4) The thickness of the silicone layer is preferably 15 to 25% of the depth of the recess.

[0019] While a thicker silicone layer can reduce the surface roughness of the bottom wall, it also increases the reaction force from the sealing member, making it difficult to bond the metal member to another member. The above configuration ensures the sealing performance of the sealing member while reducing the reaction force from the sealing member, making it easy to bond the metal member to another member.

[0020] (5) The semiconductor manufacturing apparatus of the present disclosure may be a semiconductor manufacturing apparatus including the above-mentioned metal member, a sealing member disposed in the recess, and a chamber including a chamber bottom wall to which the metal member is joined via the sealing member.

[0021] (6) The semiconductor manufacturing apparatus of the present disclosure may also be a semiconductor manufacturing apparatus including the above-described metal member, a sealing member disposed in the recess, and an installation plate to which the metal member is joined via the sealing member.

[0022] According to the semiconductor manufacturing apparatus described above, arcing can be suppressed and the sealing performance of the sealing member can be ensured.

[0023] (7) The holding device of the present disclosure may be a holding device including the above-mentioned metal member, a sealing member disposed in the recess, and a ceramic member to which the metal member is joined via the sealing member.

[0024] According to the above-described holding device, arcing can be suppressed and the sealing performance of the sealing member can be ensured.

[0025] [Details of the First Embodiment of the Present Disclosure] A first embodiment of the present disclosure will be described with reference to Figures 1 to 4. Note that the present disclosure is not limited to these examples, but is defined by the claims, and is intended to include all modifications within the meaning and scope equivalent to the claims. In the following description, for multiple identical components, only some of the components may be designated by reference numerals, and the reference numerals for other components may be omitted.

[0026] <Semiconductor manufacturing equipment> The semiconductor manufacturing apparatus 70 of the first embodiment is for performing various processes (such as film formation and etching) on ​​semiconductor wafers, glass substrates, or the like (hereinafter referred to as "wafers W") using plasma under reduced pressure. As shown in Fig. 2, the semiconductor manufacturing apparatus 70 includes a chamber 50, an electrostatic chuck 10 fixed within the chamber 50, and an external device 60 disposed outside the chamber 50. The external device 60 includes, for example, a vacuum pump 61, a gas supply device 62, a refrigerant circulation device 63, a power supply 64, and the like.

[0027] The chamber 50 defines a closed internal space 53 except for a portion connected to an external device 60. The chamber 50 includes a chamber bottom wall 51 (an example of another member) to which the metal member 30 of the electrostatic chuck 10 is coupled. The chamber bottom wall 51 is provided with a through-hole 52 for introducing pipes, wiring, and the like connected to the external device 60 into the chamber 50. A sealing member S1 such as an O-ring or an MSE seal is disposed around the through-hole 52. The sealing member S1 is compressed between the metal member 30 and the chamber bottom wall 51, thereby preventing outside air from entering through the through-hole 52. This allows the pressure inside the chamber 50 to be reduced by a vacuum pump 61. Note that in the drawings, the distance between the metal member 30 and the chamber bottom wall 51 is exaggerated for clarity.

[0028] <Electrostatic chuck> As shown in Fig. 1, the electrostatic chuck 10 includes a ceramic member 20 and a metal member 30. As shown in Fig. 2, the ceramic member 20 and the metal member 30 are bonded together by a bonding portion 26. The bonding portion 26 is formed of an adhesive such as a silicone resin, an acrylic resin, or an epoxy resin. The electrostatic chuck 10 is capable of attracting and holding the wafer W by electrostatic attraction.

[0029] <Ceramics components> The ceramic member 20 has an overall disk shape and can be formed into a shape with, for example, a diameter of approximately 300 mm and a thickness of approximately 3 mm. As shown in FIG. 2, the ceramic member 20 has a first surface 20A for holding the wafer W and a second surface 20B disposed on the opposite side of the first surface 20A. The first surface 20A is disposed on the upper side of the ceramic member 20, and the second surface 20B is disposed on the lower side of the ceramic member 20. The ceramic member 20 includes a ceramic insulator 21 and a chuck electrode 27 and a heater electrode (not shown) disposed inside the insulator 21. The chuck electrode 27 is disposed on the side closer to the first surface 20A. The heater electrode is disposed below the chuck electrode 27. The chuck electrode 27 exerts an electrostatic chucking force when a voltage is applied. The heater electrode is configured to generate heat when a voltage is applied and a current flows through it.

[0030] The chuck electrode 27 and the heater electrode are mainly composed of tungsten, molybdenum, an alloy of these, or a carbide of these. As the chuck electrode and the heater electrode, metallization in which a conductive layer formed by printing a conductive paste and sintering, metal foil, metal mesh, etc. may also be used.

[0031] A terminal 24 (only one shown) is connected to each of the heater electrode and the chuck electrode 27. Each terminal 24 is disposed so as to penetrate vertically through the metal member 30. Each terminal 24 is connected to a power source 64 disposed outside the chamber 50 via wiring or the like.

[0032] <Insulator> The insulator 21 is mainly composed of alumina, aluminum nitride, yttria, or a composite material of alumina and silicon carbide.

[0033] A gas flow path 22 for flowing an inert gas such as helium is formed inside the insulator 21. An outlet 23 communicating with the gas flow path 22 is formed on the surface of the insulator 21. The inert gas supplied from the gas supply device 62 to the gas flow path 22 is discharged from the outlet 23. This introduces the inert gas into the space between the wafer W and the ceramic member 20. By introducing the inert gas into this space, the thermal conduction between the wafer W and the ceramic member 20 can be improved.

[0034] <Metal parts> The metal member 30 is a substantially circular, flat, plate-like member having the same diameter as or a larger diameter than the ceramic member 20. For example, the metal member 30 can be formed into a shape having a diameter of approximately 340 mm and a thickness of approximately 20 mm. The metal member 30 is mainly composed of aluminum, an aluminum alloy, or the like. The metal member 30 has a third surface 30A disposed on the ceramic member 20 side and a fourth surface 30B disposed on the chamber bottom wall 51 side. The third surface 30A is disposed on the upper side of the metal member 30, and the fourth surface 30B is disposed on the lower side of the metal member 30. The third surface 30A is joined to the second surface 20B of the ceramic member 20 by a joining portion 26. The fourth surface 30B (an example of an opposing surface) faces the chamber bottom wall 51.

[0035] A refrigerant flow path 31 is provided inside the metal member 30. The refrigerant flow path 31 is connected to a refrigerant circulation device 63 via piping or the like. The refrigerant circulation device 63 is configured to be able to circulate a refrigerant such as a fluorine-based inert liquid or water through the refrigerant flow path 31. When the refrigerant flows through the refrigerant flow path 31, the metal member 30 is cooled, and heat transfer (heat dissipation) between the metal member 30 and the ceramic member 20 via the joint 26 cools the ceramic member 20, and the wafer W held by the first surface 20A of the ceramic member 20 is cooled. This allows the temperature of the wafer W to be controlled.

[0036] The metal member 30 is provided with a terminal hole 32 that receives the terminal 24 and a gas introduction path 33 that communicates with the gas flow path 22 of the ceramic member 20. The terminal hole 32 and the gas introduction path 33 are formed to penetrate the metal member 30 in the vertical direction. The gas introduction path 33 is connected to a gas supply device 62 disposed outside the chamber 50 via a pipe or the like.

[0037] The metal member 30 is joined to the chamber bottom wall 51 via a seal member S1. Although not shown, the metal member 30 and the chamber bottom wall 51 can be joined by, for example, bolt fastening. A configuration can be employed in which insertion holes through which bolts are inserted are formed on the outer periphery of the metal member 30, and fastening portions into which the bolts are fastened are provided on the chamber bottom wall 51.

[0038] As shown in FIG. 3 , the metal member 30 has a groove-shaped recess 34 recessed from the fourth surface 30B. A seal member S1 is arranged within the recess 34. The recess 34 includes a bottom wall 35 and a pair of side walls 36 connecting both side edges of the bottom wall 35 to the fourth surface 30B. The fourth surface 30B, the bottom wall 35, and the pair of side walls 36 have an anodized aluminum layer AL (an example of a barrier layer). This anodized aluminum layer AL is formed by anodizing the metal member 30. The anodized aluminum layer AL may be provided on the third surface 30A or a side surface of the metal member 30. By providing the anodized aluminum layer AL on the metal member 30, it is possible to reduce the occurrence of abnormal discharge during plasma processing in the semiconductor manufacturing apparatus 70.

[0039] The anodized aluminum layer AL has a high surface roughness immediately after being formed by anodizing. The surface roughness of the anodized aluminum layer AL on the fourth surface 30B has been reduced by polishing. However, it is difficult to reduce the surface roughness of the anodized aluminum layer AL on the bottom wall portion 35 and the pair of side wall portions 36, which are located in a recessed position from the fourth surface 30B, by polishing.

[0040] Referring to FIG. 4, consider a comparative example in which the bottom wall 35 and the pair of sidewalls 36 have high surface roughness, the seal member S1 is disposed in the recess 34, and the metal member 30 is bonded to the chamber bottom wall 51. In this case, when the seal member S1 is compressed between the bottom wall 35 and the chamber bottom wall 51, a small gap is formed between the seal member S1 and the anodized aluminum layer AL of the bottom wall 35. This gap is large enough to allow fluid to pass through, allowing outside air to enter the interior space 53 of the chamber 50 through the through-hole 52 in the chamber bottom wall 51 located inside the seal member S1. For example, in FIG. 4, arrows indicate the flow of outside air into the interior space 53 of the chamber 50 through the through-hole 52 through which the connection wiring 25 connecting the terminal 24 to the power source 64 outside the chamber 50 is introduced. Therefore, even if the gas in the interior space 53 of the chamber 50 is exhausted by the vacuum pump 61, the pressure inside the chamber 50 cannot be reduced (see FIG. 2). Therefore, plasma cannot be generated in the semiconductor manufacturing equipment 70, and the wafer W cannot be processed.

[0041] 3, a silicone layer SL is formed on the outside of the anodized aluminum layer AL of the bottom wall portion 35. The silicone layer SL is formed by applying a curable silicone resin to the bottom wall portion 35 and then curing it. This makes it possible to eliminate the uneven shape of the anodized aluminum layer AL of the bottom wall portion 35.

[0042] According to the configuration of this embodiment, when the seal member S1 disposed in the recess 34 is compressed between the bottom wall 35 and the chamber bottom wall 51, the seal member S1 adheres to the silicone layer SL, thereby ensuring the sealing performance of the seal member S1. For example, in FIG. 3, outside air that has entered the terminal hole 32 from the through hole 52 through which the connection wiring 25 connecting the terminal 24 to the power source 64 outside the chamber 50 is introduced cannot penetrate into the internal space 53 of the chamber 50 through the gap between the bottom wall 35 and the seal member S1 because of the close contact between the silicone layer SL and the seal member S1. Therefore, the pressure inside the chamber 50 can be reduced by the vacuum pump 61, enabling processing of the wafer W in the semiconductor manufacturing apparatus 70 (see FIG. 2).

[0043] <Metal component manufacturing methods> An example of a method for manufacturing the metal member 30 of this embodiment will now be described. First, a metal disk-shaped member that will form the metal member 30 is prepared. This disk-shaped member is cut to form the recess 34. An anodized aluminum layer AL is formed on the disk-shaped member with the recess 34 provided therein. As a result, the anodized aluminum layer AL is formed on the outer surfaces of the disk-shaped member (e.g., the third surface 30A, side surfaces, etc.) and on the bottom wall 35 and pair of side wall portions 36 of the recess 34. Note that the manufacture of the metal member 30 may be started after preparing a disk-shaped member on which the manufacturing process up to this point (i.e., the formation of the recess 34 and the anodizing treatment) has been completed. Next, a silicone-based resin is applied to the anodized aluminum layer AL on the bottom wall portion 35 of the recess 34 and cured. This allows a silicone layer SL to be formed on the anodized aluminum layer AL on the bottom wall portion 35. This completes the manufacture of the metal member 30 of this embodiment.

[0044] <Effects of the First Embodiment> As described above, the metal member 30 of embodiment 1 is a metal member 30 that is bonded to another member (chamber bottom wall 51) via a sealing member S1, and has an opposing surface (fourth surface 30B) that faces the other member, and a recess 34 that is recessed from the opposing surface and has the sealing member S1 disposed inside. The recess 34 has a bottom wall portion 35 and a pair of side wall portions 36 that connect both side edges of the bottom wall portion 35 to the opposing surface. The opposing surface, the bottom wall portion 35, and the pair of side wall portions 36 have a barrier layer (anodized layer AL), and the bottom wall portion 35 has a silicone layer SL on the barrier layer of the bottom wall portion 35.

[0045] Since the recess 34 is provided with a barrier layer, when the metal member 30 is used in the semiconductor manufacturing apparatus 70, arcing can be suppressed in the recess 34.

[0046] The barrier layer on the bottom wall 35 of the recess 34 is recessed from the opposing surface, making it difficult to perform polishing or other processes, resulting in high surface roughness. If the bottom wall 35 of the recess 34 has high surface roughness, compressing the seal member S1 between the bottom wall 35 and another component may result in a gap between the seal member S1 and the bottom wall 35, potentially deteriorating the sealability of the bonded portion between the metal component 30 and the other component. In such cases, air leaks into the vacuum system of the semiconductor manufacturing equipment 70. However, with the above-described configuration, the bottom wall 35 includes a silicone layer SL covering the barrier layer, allowing the silicone layer SL to be tightly attached to the seal member S1. This prevents a gap from forming between the bottom wall 35 and the seal member S1, ensuring the sealability of the bonded portion between the metal component 30 and the other component. This prevents air leaks into the vacuum system of the semiconductor manufacturing equipment 70.

[0047] In the first embodiment, the maximum height Rz of the surface of the silicone layer SL is preferably 60 μm or less.

[0048] According to the above configuration, the surface of the silicone layer SL does not have large irregularities, which facilitates adhesion between the silicone layer SL and the seal member S1, thereby further ensuring the sealing performance of the seal member S1.

[0049] In the first embodiment, the hardness of the silicone layer SL is preferably 10 or more and 60 or less in Shore A hardness.

[0050] The silicone layer SL has a hardness of 10 or more and 60 or less on the Shore A hardness scale, which makes it relatively softer than, for example, the metal member 30 or the barrier layer, and therefore the silicone layer SL can be easily attached to the sealing member S1. Furthermore, when the sealing member S1 is compressed between the bottom wall portion 35 and another member, the reaction force from the sealing member S1 applied to the bottom wall portion 35 can be alleviated. Because the reaction force from the sealing member S1 can be alleviated, the range of selection in terms of the hardness of the sealing member S1 is broadened. The hardness of the silicone layer SL can be adjusted by adjusting the filler content in the uncured silicone-based resin that forms the silicone layer SL.

[0051] In the first embodiment, the thickness of the silicone layer SL is preferably 15 to 25% of the depth of the recess .

[0052] If the thickness of the silicone layer SL is increased, it is easier to reduce the surface roughness of the bottom wall portion 35, but the reaction force from the sealing member S1 increases, making it difficult to bond the metal member 30 to other members. According to the above configuration, the reaction force from the sealing member S1 is reduced while ensuring the sealing performance of the sealing member S1, and it is possible to easily bond the metal member 30 to other members.

[0053] The semiconductor manufacturing apparatus 70 of embodiment 1 includes the above-described metal member 30, a seal member S1 disposed in the recess 34, and a chamber 50 including a chamber bottom wall 51 to which the metal member 30 is joined via the seal member S1.

[0054] According to the semiconductor manufacturing apparatus 70 of the first embodiment, arcing can be suppressed and the sealing performance of the sealing member S1 can be ensured.

[0055] [Details of the Second Embodiment of the Present Disclosure] A second embodiment of the present disclosure will be described with reference to Fig. 5. A semiconductor manufacturing apparatus 170 of the second embodiment further includes an installation plate 40 between a chamber bottom wall 51 and a metal member 30, and the metal member 30 is coupled to the installation plate 40 (an example of another member). Other configurations of the second embodiment are similar to those of the first embodiment. Hereinafter, the same members as those of the first embodiment will be assigned the same reference numerals as those of the first embodiment, and a description of the same configurations, functions, and effects as those of the first embodiment will be omitted.

[0056] <Installation board> The mounting plate 40 is made of metal and has a disk shape. The mounting plate 40 has a fifth surface 40A arranged on the metal member 30 side and a sixth surface 40B arranged on the chamber bottom wall 51 side. The fifth surface 40A is arranged on the upper side of the mounting plate 40, and the sixth surface 40B is arranged on the lower side of the mounting plate 40. Similar to the metal member 30, the mounting plate 40 has a terminal hole 42 and a gas introduction path 43 formed therein. The mounting plate 40 also has a coolant introduction path 41 that communicates with the coolant flow path 31.

[0057] The installation plate 40 has a recess 44 recessed from the sixth surface 40B. Although not shown in detail, the recess 44 is configured similarly to the recess 34 of the metal member 30. That is, although not shown in the figure, the recess 44 has a bottom wall and a pair of side walls, and the bottom wall, the pair of side walls, and the sixth surface 40A have an anodized aluminum layer AL (see FIG. 3). The anodized aluminum layer AL on the bottom wall of the recess 44 is covered with a silicone layer SL. With a seal member S2 disposed inside the recess 44, the installation plate 40 is joined to the chamber bottom wall 51 by bolting or the like.

[0058] In this embodiment, the seal member S1 disposed within the recess 34 of the metal member 30 is compressed between the bottom wall 35 and the fifth surface 40A of the installation plate 40. Because the bottom wall 35 has a silicone layer SL, the silicone layer SL and the seal member S1 come into close contact with each other, preventing fluid from passing between the bottom wall 35 and the seal member S1. This ensures a tight seal provided by the seal member S1. Similarly, the seal member S2 disposed within the recess 44 of the installation plate 40 comes into close contact with the silicone layer SL on the bottom wall of the recess 44, ensuring a tight seal provided by the seal member S2.

[0059] <Effects of the Second Embodiment> The semiconductor manufacturing apparatus 170 of the second embodiment includes a metal member 30, a seal member S1 disposed in the recess 34, and an installation plate 40 to which the metal member 30 is coupled via the seal member S1.

[0060] According to this semiconductor manufacturing apparatus 170, arcing can be suppressed and the sealing performance of the sealing member S1 can be ensured.

[0061] [Details of the Third Embodiment of the Present Disclosure] A third embodiment of the present disclosure will be described with reference to FIG. 6 . In an electrostatic chuck 210 (an example of a holding device) of a semiconductor manufacturing apparatus 270 of the third embodiment, a ceramic member 220 and a metal member 230 are not joined by a joint, and the metal member 230 is coupled to the ceramic member 220 (an example of another member) via a seal member S3 by fastening with a bolt or the like. More specifically, an insertion hole 228 through which a bolt B1 is inserted is formed on the outer periphery of the ceramic member 220. A fastening portion 237 through which the bolt B1 is fastened is provided on the outer periphery of the metal member 230. The other configurations of the third embodiment are similar to those of the first embodiment. Hereinafter, the same components as those of the first embodiment will be denoted by the same reference numerals as those of the first embodiment, and a description of the same configurations, functions, and effects as those of the first embodiment will be omitted.

[0062] The metal member 230 has a third surface 230A (an example of an opposing surface) facing the ceramic member 220, and a fourth surface 30B disposed on the chamber bottom wall 51 side. The metal member 230 has a recess 234 recessed from the third surface 230A. The recess 234 is configured similarly to the recess 34 provided on the fourth surface 30B side. That is, although not shown, the recess 234 has a bottom wall portion and a pair of side walls, and the bottom wall portion, the pair of side walls, and the third surface 230A have an anodized aluminum layer AL (see FIG. 3). The anodized aluminum layer AL on the bottom wall portion of the recess 234 is covered with a silicone layer SL.

[0063] In this embodiment, the seal member S3 disposed in the recess 234 of the metal member 230 is compressed between the bottom wall of the recess 234 and the second surface 20B of the ceramic member 220. Because the bottom wall of the recess 234 has the silicone layer SL, the silicone layer SL and the seal member S3 come into close contact with each other, thereby preventing fluid from passing between the bottom wall of the recess 234 and the seal member S3. Therefore, the sealing performance provided by the seal member S3 can be ensured.

[0064] <Effects of the Third Embodiment> The holding device (electrostatic chuck 210) of the third embodiment includes a metal member 230, a seal member S3 disposed in the recess 234, and a ceramic member 220 to which the metal member 230 is joined via the seal member S3.

[0065] This holding device can suppress arcing and ensure the sealing performance of the seal member S3.

[0066] <Other embodiments> (1) In FIG. 3 of the first embodiment, the entire anodized aluminum layer AL of the bottom wall portion 35 is covered with the silicone layer SL. However, the silicone layer need only cover the anodized aluminum layer of the bottom wall portion to an extent that abnormal discharge can be suppressed, and a configuration in which only a portion of the anodized aluminum layer of the bottom wall portion is not covered by the silicone layer may also be adopted.

[0067] (2) In embodiment 1, the metal member 30 is bonded to the chamber bottom wall 51 via the sealing member S1, in embodiment 2 the metal member 30 is bonded to the installation plate 40 via the sealing member S1, and in embodiment 3 the metal member 230 is bonded to the ceramic member 220 via the sealing member S3, but the metal member may also be bonded to a member other than those mentioned above via a sealing member.

[0068] (3) In the first embodiment, the cross-sectional shape of the recess 34 is rectangular, but the recess may be dovetail-shaped. [Explanation of symbols]

[0069] 10,210...Electrostatic chuck (holding device) 20, 220... Ceramic member 20A... First surface 20B... Second surface 21... Insulator 22... Gas flow path 23... Jet nozzle 24... Terminal 25... Connection wiring 26... Joint 27... Chuck electrode 228... Insertion hole 30, 230... Metal member 30A, 230A... Third surface 30B... Fourth surface 31... Refrigerant flow path 32... Terminal hole 33... Gas introduction path 34, 234... Recess 35... Bottom wall portion 36... Side wall portion 237... Fastening portion 40: Installation plate 40A: Fifth surface 40B: Sixth surface 41: Refrigerant introduction passage 42: Terminal hole 43: Gas introduction passage 44: Recess 50...Chamber 51...Chamber bottom wall 52...Through-hole 53...Inner space 60...External device 61...Vacuum pump 62...Gas supply device 63...Refrigerant circulation device 64...Power supply 70, 170, 270...Semiconductor manufacturing equipment AL...Alumite layer (barrier layer) B1...Bolt S1, S2, S3...Sealing material SL...Silicone layer W...Wafer

Claims

1. A holding device comprising a ceramic member, a metal member, and a joint disposed between the ceramic member and the metal member, which holds a wafer by electrostatic attraction, the metal member is connected to another member via a sealing member, the metal member includes an opposing surface facing the other member, and a recess recessed from the opposing surface and having the seal member disposed therein; the recess includes a bottom wall portion and a pair of side wall portions connecting both side edges of the bottom wall portion to the opposing surface, the opposing surface, the bottom wall portion, and the pair of side wall portions have a barrier layer; The bottom wall comprises a silicone layer on the barrier layer of the bottom wall.

2. The holding device according to claim 1 , wherein the maximum height Rz of the surface of the silicone layer is 60 μm or less.

3. The retaining device according to claim 1 , wherein the silicone layer has a hardness of 10 or more and 60 or less in Shore A hardness.

4. The retaining device according to claim 1 , wherein the thickness of the silicone layer is 15 to 25% of the depth of the recess.

5. A holding device according to any one of claims 1 to 4; a sealing member disposed within the recess; a chamber having a chamber bottom wall to which the metal member is joined via the seal member.

6. A holding device according to any one of claims 1 to 4; a sealing member disposed within the recess; a mounting plate to which the metal member is joined via the sealing member.

7. A holding device according to any one of claims 1 to 4, a sealing member disposed within the recess; a ceramic member to which the metal member is joined via the seal member.

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