Edge processing device and edge processing method

Abstract

To improve the processing accuracy of a processing region when the peripheral edge of a substrate is processed.SOLUTION: A peripheral portion processing apparatus that processes a peripheral edge region on one surface side of a substrate by irradiating the peripheral edge region with light, includes a holding and rotating unit that holds and rotates the substrate, a light emitting unit arranged on the other surface side of the substrate held by the holding and rotating unit and emitting the light, and a reflecting unit arranged on one surface side of the substrate held by the holding and rotating unit, reflecting the light from the light emitting unit, and irradiating a peripheral edge region on the one surface side of the substrate, and the light emitting unit is arranged such that a part of the light emitting width of the light emitted from the light emitting unit is blocked by the end portion of the substrate held by the holding and rotating unit, and the light emitting width of the light emitted from the light emitting unit has a width equal to or greater than the radial length of the substrate in the peripheral edge region.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] The present disclosure relates to a peripheral edge processing device and a peripheral edge processing method. [Background technology]

[0002] BACKGROUND ART Conventionally, peripheral portions of coating films such as resist films formed on substrates such as semiconductor wafers (hereinafter sometimes simply referred to as wafers) have been treated.

[0003] Patent Document 1 describes a film peeling device that peels off a film formed on a substrate, comprising: a holding means that holds the substrate; and an irradiation means that processes the substrate by irradiating an ultrashort pulse laser beam onto the interface between the substrate and the film through the film, thereby peeling off the film, wherein the fluence of the ultrashort pulse laser beam irradiated onto the interface by the irradiation means is greater than the processing threshold fluence required to process the substrate with the ultrashort pulse laser beam, and is smaller than the processing threshold fluence required to process the film with the ultrashort pulse laser beam. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2013-21263 Summary of the Invention [Problem to be solved by the invention]

[0005] The technology according to the present disclosure improves the processing accuracy of the processing region when processing the peripheral edge portion of a substrate. [Means for solving the problem]

[0006] One aspect of the present disclosure is a peripheral edge processing apparatus for processing a peripheral edge region on one surface of a substrate by irradiating the peripheral edge region with light, the apparatus comprising: a holding and rotating unit that holds and rotates the substrate; a light emitting unit that is disposed on the other surface side of the substrate held by the holding and rotating unit and emits the light; and a reflecting unit that is disposed on one surface side of the substrate held by the holding and rotating unit and reflects the light from the light emitting unit to irradiate the peripheral edge region on the one surface side of the substrate, the light emitting unit is disposed so that a portion of the emission width of the light from the light emitting unit is blocked by an edge of the substrate held by the holding and rotating unit, the emission width of the light from the light emitting unit has a width equal to or greater than a radial length of the peripheral edge region of the substrate, the one surface is a front surface of the substrate, the reflecting unit is disposed above the substrate held by the holding and rotating unit, the light emitting unit is disposed on the back side of the substrate, the distance from the light emitting unit to the substrate is shorter than the distance from the reflecting unit to the substrate, the reflecting portion has a reflecting surface that is curved concavely outward, and the light irradiated from the reflecting portion to the peripheral region has an irradiation width that narrows as it approaches the substrate, and the position at which the irradiation width is smallest is set to be located closer to the other surface than the one surface of the substrate, The extent to which a part of the emission width of the light from the light emitting unit is blocked by the edge of the substrate held by the holding rotation unit changes depending on the amount of eccentricity of the substrate, and the light is transmitted from the reflecting unit to the Peripheral region The width of the reflected light towards the target changes. [Effects of the Invention]

[0007] According to the present disclosure, when processing the peripheral edge portion of a substrate, the processing accuracy of the processing region can be improved. [Brief explanation of the drawings]

[0008] [Figure 1] 1 is a side cross-sectional view illustrating a schematic outline of the configuration of a peripheral edge processing apparatus according to an embodiment; [Figure 2] FIG. 2 is a plan view illustrating a schematic outline of the configuration of the peripheral edge processing apparatus of FIG. 1. [Figure 3] 2 is an explanatory diagram showing the positional relationship between a laser emitting unit and a mirror in the peripheral edge processing device of FIG. 1. FIG. [Figure 4] 10A and 10B are explanatory diagrams illustrating the operation of the peripheral edge processing device according to the embodiment. [Figure 5] 10A and 10B are explanatory diagrams illustrating the effect when the angle of the mirror is changed. [Figure 6]10A and 10B are explanatory diagrams illustrating the influence of the optical path length when the height position of the peripheral edge region of a warped wafer is changed. [Figure 7] 10A and 10B are explanatory diagrams illustrating the relationship between the distances of a wafer and a laser light emitting unit and a mirror. [Figure 8] 10 is an explanatory diagram showing how a laser beam is emitted obliquely from a laser emitting unit. FIG. [Figure 9] FIG. 10 is an explanatory diagram showing a state in which a laser emitting unit is arranged on the upper surface side of a wafer and a mirror is arranged on the lower surface side. [Figure 10] 10A and 10B are explanatory diagrams showing the effect when a concave mirror is used for a warped wafer. DETAILED DESCRIPTION OF THE INVENTION

[0009] In the manufacturing process of semiconductor devices, etc., there is a step of forming a resist film as a coating film for pattern formation on the surface of a substrate such as a semiconductor wafer (hereinafter sometimes referred to as "wafer"), and this step may be followed by a process to remove unnecessary resist film formed on the peripheral edge of the wafer, known as edge bead removal (hereinafter sometimes referred to as "EBR process").

[0010] In this regard, the technique described in Patent Document 1 involves irradiating a peripheral edge region of a wafer with a laser beam while rotating the wafer, thereby performing a peeling process.

[0011] When processing the peripheral edge of a wafer, the processing width must be uniform around the entire peripheral edge of the wafer. However, when the wafer is placed on a rotating holding part such as a spin chuck, the wafer may be misaligned due to the wafer transfer device. Furthermore, the spin chuck itself may be eccentric.

[0012] In such a case, when the wafer held on the spin chuck is rotated, such misalignment and eccentricity cause the position of the wafer's peripheral edge to fluctuate when, for example, a fixed point is observed in a plan view.The technology described in Patent Document 1 continuously irradiates a laser beam from above onto a fixed point on the wafer's peripheral edge, so the processing width fluctuates due to the effects of the eccentricity and the like.

[0013] Therefore, the technology according to the present disclosure suppresses fluctuations in the processing width of the peripheral edge of the wafer even if the wafer is misaligned or eccentric as described above, thereby improving the processing accuracy of the processing area in the peripheral edge.

[0014] Hereinafter, the present embodiment will be described with reference to the drawings. In this specification, elements having substantially the same functional configuration are designated by the same reference numerals, and redundant description will be omitted.

[0015] Fig. 1 is a schematic cross-sectional side view of a peripheral portion processing apparatus 1 according to an embodiment, and Fig. 2 is a schematic plan view of the same. This peripheral portion processing apparatus 1 is configured as an apparatus for forming a resist film as a coating film on the surface of a wafer W and then removing unnecessary resist film from the peripheral portion.

[0016] This peripheral edge processing apparatus 1 has a housing 2. An air supply unit 3 is provided in the upper part of the housing 2, which supplies clean air from an FFU (not shown) downward as a downflow.

[0017] A spin chuck 10 is provided below the air supply unit 3 in the housing 2 as a holding and rotating unit that holds and rotates the wafer W. The spin chuck 10 is configured to horizontally hold the wafer W, which is a circular substrate having a diameter of, for example, 300 mm, by vacuum suction. The spin chuck 10 is connected to a rotation drive unit 11 that includes a motor and the like. The rotation drive unit 11 rotates the spin chuck 10 around a vertical axis at a rotation speed corresponding to a control signal output from a control unit 100, which will be described later.

[0018] The transfer of the wafer W to the spin chuck 10 by a transfer device (not shown) is performed by raising and lowering three support pins 12 (only two are shown in the figure for convenience of illustration) that support the backside of the wafer W. The support pins 12 are provided on a base 13, and the base 13 can be raised and lowered by driving an elevation mechanism 14.

[0019] A guide ring 20 having a mountain-shaped cross section is provided below the spin chuck 10, and a circular outer peripheral wall 21 extending downward is provided on the outer peripheral edge of the guide ring 20. A cup 22 is disposed so as to surround the spin chuck 10 and the guide ring 20.

[0020] The cup 22 is open at the top so that the wafer W can be transferred to the spin chuck 10. A gap 23 forming a discharge path is formed between the inner peripheral surface of the cup 22 and the outer peripheral wall 21 of the guide ring 20. An exhaust pipe 24 standing upright from the bottom 22a of the cup 22 is provided at the bottom 22a of the cup 22. A drain port 25 is also provided at the bottom 22a of the cup 22.

[0021] The peripheral edge processing apparatus 1 includes a resist nozzle 30 that supplies resist liquid onto the wafer W held on the spin chuck 10. The resist nozzle 30 has a discharge port 30a formed on its lower end surface. The resist nozzle 30 is connected to a resist liquid supply source 32 that stores resist liquid via a resist liquid supply path 31. The resist liquid supply source 32 includes a pump that pressure-feeds the resist liquid toward the resist nozzle 30, and the pressure-feed resist liquid is discharged from the discharge port 30a. The supply, stop, and amount of resist liquid supplied to the resist nozzle 30 are controlled based on control signals output from the control unit 100.

[0022] 2, the resist nozzle 30 is supported by an arm 33 extending horizontally. The resist nozzle 30 is connected to a moving mechanism 34 via the arm 33. The moving mechanism 34 moves along a guide rail 35 extending laterally, and can also raise and lower the arm 33. The moving mechanism 34 moves in accordance with a control signal from the control unit 100, and the movement of the moving mechanism 34 allows the resist nozzle 30 to move between a standby position 36 provided outside the cup 22 and a position above the center of the wafer W. The moving distance, moving speed, and moving direction of the moving mechanism 34 are also controlled by a control signal from the control unit 100.

[0023] The peripheral edge processing apparatus 1 has a laser emission unit 40 as a light emission unit. The laser emission unit 40 is disposed below the edge of the wafer W held by the spin chuck 10 and above the guide ring 20. As shown in FIG. 1 , the laser emission unit 40 emits laser light B vertically upward.

[0024] 1 and 2, the laser emission unit 40 can be moved by a driving member (not shown) in the horizontal direction and in the radial direction of the wafer W held by the spin chuck 10. Therefore, in the peripheral edge processing apparatus 1 according to the embodiment, the emission width BW from the laser emission unit 40 is the maximum movement width of the laser emission unit 40 moved in this way, that is, the trajectory width of the laser light B emitted between the position closest to the center and the position closest to the periphery.

[0025] Laser light B emitted from laser emitter 40 is directed toward mirror 50, which serves as a reflector. Mirror 50 is disposed above the edge of wafer W held by spin chuck 10. In this embodiment, as shown in FIG. 1, mirror 50 is disposed near the ceiling of housing 2, i.e., directly below air supply unit 3. Mirror 50 is supported by, for example, a support member (not shown). The angle of the reflecting surface of mirror 50 relative to wafer W is variable and can be fixed at any angle.

[0026] The positional relationship between the laser emitter 40 and the mirror 50 is as shown in Fig. 3. That is, they are arranged so that a part of the emission width BW of the laser light B from the laser emitter 40 is blocked by the edge of the wafer W held on the spin chuck 10, and the emission width BW of the laser light B that reaches the mirror 50 is reflected by the mirror 50 and irradiated onto the peripheral region A of the wafer W held on the spin chuck 10. The angle of the reflecting surface of the mirror 50 with respect to the wafer W is adjusted so that such irradiation onto the peripheral region A can be realized.

[0027] The movement speed, movement width, and angle adjustment of the mirror 50 of the laser emission unit 40, the adjustment of the irradiation position on the peripheral region A, the movement speed of the laser emission unit 40 and the rotation speed, start / stop of the spin chuck 10, etc. are controlled by the control unit 100 described below.

[0028] That is, the peripheral area processing device 1 having the above configuration is controlled by the control unit 100 as described above. The control unit 100 is configured by a computer equipped with, for example, a CPU, a memory, etc., and has a program storage unit (not shown). The program storage unit stores programs that control various processes in the peripheral area processing device 1. The programs may be recorded on a computer-readable storage medium H and installed into the control unit 100 from the storage medium. The storage medium H may be temporary or non-temporary.

[0029] Next, a peripheral edge processing method using the peripheral edge processing apparatus 1 having the above configuration will be described. First, a wafer W loaded into the peripheral edge processing apparatus 1 is placed on the spin chuck 10 as shown in FIG. 1. Then, an arm 33 supporting a resist nozzle 30 moves from a standby position 36 to the center position of the wafer W, and while rotating the wafer W, ejects the resist liquid from the ejection port 30a onto the center position of the wafer W. The ejected resist liquid is spread and applied over the entire surface of the wafer W by a spin coating method. Note that the resist liquid may also be applied by a known pre-wetting method in which a solvent for the resist liquid is supplied to the wafer W before the resist liquid is applied.

[0030] When the supply of the resist solution is completed, the resist nozzle 30 immediately retracts, and the wafer W is then rotated to dry the resist solution. After this so-called spin-off drying is completed, the spin chuck 10 rotates, rotating the held wafer W, and in this state, the laser emitter 40 moves back and forth (scanning) while emitting laser light B toward the mirror 50. The laser light reflected by the mirror 50 then performs the peripheral edge processing, which is one aspect of the present disclosure, i.e., the process of removing unnecessary resist film from the peripheral surface of the wafer W.

[0031] According to the edge processing technique of the present disclosure in the embodiment, as shown in FIG. 3 , a portion of the emission width BW of the laser light B from the laser emitter 40 is blocked by the edge of the wafer W held by the spin chuck 10. As a result, the width BWA of the reflected light of the laser light reflected by the mirror 50 is narrowed by the amount blocked by the edge. When the wafer W is eccentric, this width BWA fluctuates due to the movement of the edge in and out as the wafer W rotates. In other words, it changes in accordance with the amount of eccentricity of the wafer W.

[0032] 4, for example, if the center of rotation Q of the wafer W is displaced (eccentric) from the reference center P of rotation of the wafer W, the edge of a certain portion of the rotating wafer W will be shifted inward (toward the center) due to the eccentricity, as shown on the right side of Fig. 4, and the edge of another portion of the wafer W will be shifted outward (toward the outside) due to the eccentricity, as shown on the left side of Fig. 4. For convenience of illustration, both cases are shown at the same time.

[0033] 4, when the edge of the wafer W is shifted inward (toward the center) due to eccentricity, the emission width BW of the laser light may not be blocked by the edge of the wafer W. In this case, the width BWA of the light reflected by the mirror 50 becomes the same as the emission width BW of the laser light B, and the processing width (radial width) in the peripheral region of the wafer W is also wide.

[0034] 4, when the edge of the wafer W is shifted outward (outward) due to eccentricity, the emission width BW of the laser light is largely blocked by the edge of the wafer W, and the width BWA of the reflected light reflected by the mirror 50 becomes smaller than the emission width BW of the laser light B. In other words, the processing width (radial width) in the peripheral region of the wafer W becomes narrower.

[0035] Therefore, according to the peripheral edge processing technique of the present disclosure in the embodiment, the processing width varies in accordance with the amount of eccentricity of the wafer W. Therefore, even if the wafer W is eccentrically held on the spin chuck 10, the eccentricity can be absorbed, and the processing of the peripheral edge region of the wafer W can be made uniform over the entire circumference, thereby improving the accuracy of the processing region. The emission width BW of the laser light is preferably equal to or greater than the radial width of the peripheral edge region A.

[0036] As described above, when the laser emitting unit 40 is moved back and forth (scanned) to emit the laser light B toward the mirror 50 while the held wafer W is rotating, the rotation speed of the wafer W and the movement speed of the laser emitting unit 40 can be determined taking into consideration the following points, for example: (1) If the rotation of the wafer W is too slow, some areas will be irradiated with the laser light B and some areas will not be irradiated, and (2) If the rotation of the wafer W is too fast, it is expected that the energy required to remove the resist film with the laser light B will be insufficient.

[0037] Regarding (1) above, the minimum rotation speed is determined by the light source width of the laser light B of the laser emitter 40 used. For example, if the reciprocating (scanning) speed of the laser emitter 40 is 1 mm / s, then if the light source width is 0.1 mm, the rotation speed is 600 rpm or more, if the light source width is 1 mm, the rotation speed is 60 rpm or more, and if the light source width is 1 mm, the rotation speed is 6 rpm or more. Regarding (2) above, the rotation speed is also dependent on the output of the laser light B, so it cannot be determined uniquely, but it is thought that it can be used at 3000 rpm or less, the same as a general spin module.

[0038] From the above, for example, when the light source width of the laser light B is 0.1 mm or less, the appropriate rotation speed of the wafer W is 600 rpm to 3000 rpm, when the light source width is 1 mm or more but less than 10 mm, 60 rpm to 2000 rpm, and when the light source width is 10 mm or more, 1 rpm to 1500 rpm. From these facts, if the speed (linear velocity) in the circumferential direction of the peripheral region of the wafer W to be processed is sufficiently fast relative to the moving speed of the laser emission unit 40, the intended object of the technology of the present disclosure can be achieved.

[0039] To change the processing width of the peripheral region (the width in the radial direction processed by the light reflected from the mirror 50), the angle of the mirror 50 with respect to the wafer W can be changed. For example, as shown in FIG. 5, the angle θ formed by the laser light B emitted vertically from the laser emitter 40 and the reflection from the mirror 50 can be changed. For example, to change the processing width to 1 mm, the angle θ can be set to 1 degree, and to change the processing width to 3 mm by setting the angle θ to 3 degrees. A galvanometer mirror or a MEMS mirror can be used as the mirror 50.

[0040] The angle θ is determined, for example, taking into consideration the following points: In terms of the accuracy of the processing width, it is preferable that the laser beam B directed from the mirror 50 to the wafer W be closer to perpendicular to the top surface of the wafer W, for example, within a range of ±45 degrees with respect to an axis perpendicular to the top surface of the wafer W. Since the laser beam B directed to the mirror 50 is set so that a portion of it is blocked by the wafer W, it is preferable that the reflection angle be set to approximately 45 degrees or less so as to avoid unnecessary space on the sides of the wafer W. In addition, the angle θ is preferably 45 degrees or less in terms of ensuring space when actually installing the laser beam B in an actual device.

[0041] Incidentally, the wafer W held by the spin chuck 10 may itself be warped. In such a case, the height position of the peripheral edge of the wafer W fluctuates up and down as the wafer rotates when observed at a fixed point. This may cause fluctuations in the processing width itself.

[0042] 6 can be increased. That is, if the change in the height position of the wafer W due to warpage is Δ, the angle between the laser light B emitted vertically from the laser emitter 40 and the light reflected by the mirror 50 is θ, and the change in the processing width due to warpage is Δw, then the change in the processing width due to warpage can be expressed as follows:

[0043] Δw=(L+ΔL)tanθ-Ltanθ =ΔLtanθ ≒ΔLθ

[0044] That is, when the angle θ is small, a change proportional to the angle θ occurs, so a smaller angle θ is preferable. Therefore, to reduce θ without narrowing the processing width, it is sufficient to increase the distance L from the reflection point of the mirror 50 to the normal surface of the wafer W (the optical path length from the surface of the wafer W to the reflection point of the mirror 50). This can suppress a change in the processing width Δw caused by a rise in the height position of the peripheral region by ΔL when the wafer W is concave upward, as shown in FIG. 6 . Similarly, when the wafer W is convex upward, a change in the height position of the peripheral region by ΔL can suppress a change in the processing width Δw caused by a decrease in the height position of the peripheral region by ΔL. This can suppress a change in the processing width Δw caused by a decrease in the height position of the peripheral region by ΔL. This makes it possible to keep these changes in Δw within the adjustable range of the processing width, which depends on the emission width BW of the laser light.

[0045] As a result of verification, for example, when a wafer W has a warp of 1 mm, if it is desired to limit the change in processing width to 0.04 mm or less, θ is set to 0.04 or less (2.2 degrees or less), and in order to make the adjustment range of the processing width 5 mm or more with an angle change of 2.2 degrees or less, the required length of the distance L is 130 mm. In other words, if the distance L is 130 mm or more, when processing a wafer W having a warp of 1 mm in the height direction, it is possible to limit the variation in processing width to 0.04 mm or less.

[0046] 7, it is preferable to make the distance U from the laser emitting unit 40 to the wafer W shorter than the distance K from the reflection point of the mirror 50 to the wafer W. This makes it easier to secure space on the underside of the wafer W, thereby saving space and simultaneously making it possible to lengthen the distance L from the reflection point of the mirror 50 to the surface of a normal wafer W.

[0047] In the above example, the laser light B from the laser emission unit 40 is also emitted in the vertical direction, but this is not limiting, and as shown in Fig. 8, the laser light B from the laser emission unit 40 may be emitted obliquely outward, thereby irradiating the light reflected from the mirror 50 onto the edge side region of the wafer W, making it possible to process not only the so-called bevel portion of the wafer W but also the side edge surface called the APEX. In this case, the movement of the laser emission unit 40 may be horizontal, or may be oblique as shown in Fig. 8.

[0048] Furthermore, in all of the above examples, the laser emitting unit 40 is disposed on the underside of the wafer W and the mirror 50 is disposed on the upper side of the wafer W, but this is not limiting, and as shown in Fig. 9, the laser emitting unit 40 may be disposed on the upper side of the wafer W and the mirror 50 may be disposed on the lower side of the wafer W. This makes it possible to process the peripheral region on the lower side of the wafer W.

[0049] In the above examples, the mirror 50 has a flat reflecting surface, but as shown in Figures 10(a) to 10(c), a mirror 55 may be used that has a reflecting surface that is curved concavely outward, i.e., toward the wafer W. In this case, the reflected light irradiated from the mirror 50 onto the peripheral region of the wafer W narrows in irradiation width as it moves toward the wafer W, and it is preferable to set the position where the irradiation width is smallest to be located closer to the back surface of the wafer W than to the front surface.

[0050] 10(a), when the peripheral region of the wafer W is lower in height than the peripheral region of a normal wafer W without warpage as shown in FIG. 10(b), or when the peripheral region is higher in height than the peripheral region of a normal wafer W as shown in FIG. 10(c), the width BWA of the reflected light actually irradiated onto the peripheral region in each case varies accordingly, so that the influence of the warpage can be absorbed and the variation in the processing width can be suppressed. In other words, since the width BWA of the reflected light is wider at higher positions and narrower at lower positions, the narrowing of the processing width as the peripheral region of the wafer W gets closer to the mirror can be alleviated and improved, and the variation in the processing width can be suppressed.

[0051] In the above example, the laser light-emitting unit 40 was moved to ensure the light-emitting width BW in the present disclosure, but if the light emitted from a single light source originally has the light-emitting width BW, the light-emitting unit itself does not need to be moved. Also, the light from the light-emitting unit is light close to coherent light such as laser light, but a light-emitting unit that emits light linearly through an aperture may also be used, and it is not necessarily a laser light source.

[0052] Furthermore, in the above examples, the technology of the present disclosure has been described as a peripheral processing for removing unnecessary resist film R, but the present disclosure is not limited to this, and can also be applied to, for example, a case where light is irradiated onto the peripheral region to perform a hardening process or other modification process. In such cases, the light emitted may be not only laser light but also ultraviolet light, etc.

[0053] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive, and the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0054] 1. Peripheral processing device 10 Spin chuck 40 Laser emission unit 50 Mirror 100 control section B. Laser light R resist film W wafer

Claims

1. A peripheral processing apparatus for processing a peripheral region on one surface of a substrate by irradiating the peripheral region with light, a holding and rotating unit that holds and rotates the substrate; a light emitting unit that is disposed on the other surface side of the substrate held by the holding rotation unit and that emits the light; a reflecting section that is disposed on one side of the substrate held by the holding and rotating section and that reflects light from the light emitting section and irradiates the light onto a peripheral region on the one side of the substrate, the light emitting unit is disposed so that a part of an emission width of light from the light emitting unit is blocked by an edge of the substrate held by the holding rotation unit; an emission width of the light from the light emitting portion is equal to or greater than the radial length of the substrate in the peripheral edge region; the one surface is a front surface of a substrate, the reflecting unit is disposed above the substrate held by the holding and rotating unit, and the light emitting unit is disposed on a rear surface side of the substrate, the distance from the light emitting portion to the substrate is shorter than the distance from the reflecting portion to the substrate; The reflecting portion has a reflecting surface that is curved concavely outward, the light irradiated from the reflecting portion to the peripheral region has an irradiation width that narrows as it approaches the substrate, and the position at which the irradiation width is smallest is set to be located closer to the other surface than the one surface of the substrate; A peripheral edge processing device in which the width of the reflected light from the reflecting unit toward the peripheral edge region changes depending on the amount of eccentricity of the substrate, as a result of a change in the extent to which a portion of the emission width of the light from the light emitting unit is blocked by the edge of the substrate held by the holding rotation unit.

2. A peripheral processing apparatus for processing a peripheral region on one surface of a substrate by irradiating the peripheral region with light, a holding and rotating unit that holds and rotates the substrate; a light emitting unit that is disposed on the other surface side of the substrate held by the holding rotation unit and that emits the light; a reflecting section that is disposed on one side of the substrate held by the holding and rotating section and that reflects light from the light emitting section and irradiates the light onto a peripheral region on the one side of the substrate, the light emitting unit is disposed so that a part of an emission width of light from the light emitting unit is blocked by an edge of the substrate held by the holding rotation unit; an emission width of the light from the light emitting portion is equal to or greater than the radial length of the substrate in the peripheral edge region; the one surface is a front surface of a substrate, the reflecting unit is disposed above the substrate held by the holding and rotating unit, and the light emitting unit is disposed on a rear surface side of the substrate, the distance from the light emitting portion to the substrate is shorter than the distance from the reflecting portion to the substrate; the light-emitting width is a light-emitting width realized by movement of the light-emitting unit in a radial direction of the substrate held by the holding rotation unit, A peripheral edge processing device in which the width of the reflected light from the reflecting unit toward the peripheral edge region changes depending on the amount of eccentricity of the substrate, as a result of a change in the extent to which a portion of the emission width of the light from the light emitting unit is blocked by the edge of the substrate held by the holding rotation unit.

3. A peripheral processing apparatus for processing a peripheral region on one surface of a substrate by irradiating the peripheral region with light, a holding and rotating unit that holds and rotates the substrate; a light emitting unit that is disposed on the other surface side of the substrate held by the holding rotation unit and that emits the light; a reflecting section that is disposed on one side of the substrate held by the holding and rotating section and that reflects light from the light emitting section and irradiates the light onto a peripheral region on the one side of the substrate, the light emitting unit is disposed so that a part of an emission width of light from the light emitting unit is blocked by an edge of the substrate held by the holding rotation unit; an emission width of the light from the light emitting portion is equal to or greater than the radial length of the substrate in the peripheral edge region; the one surface is a front surface of a substrate, the reflecting unit is disposed above the substrate held by the holding and rotating unit, and the light emitting unit is disposed on a rear surface side of the substrate, the distance from the light emitting portion to the substrate is shorter than the distance from the reflecting portion to the substrate; The light from the light emitting unit is emitted obliquely outward, A peripheral edge processing device in which the width of the reflected light from the reflecting unit toward the peripheral edge region changes depending on the amount of eccentricity of the substrate, as a result of a change in the extent to which a portion of the emission width of the light from the light emitting unit is blocked by the edge of the substrate held by the holding rotation unit.

4. The edge processing apparatus according to claim 1 , wherein the light emission width is a light emission width of light emitted from one light emitting portion.

5. The peripheral edge processing device according to any one of claims 1 to 3, wherein the light irradiated from the reflecting section onto the peripheral edge region is irradiated onto the peripheral edge region at an angle of 45 degrees or less with respect to a vertical axis.

6. The reflecting portion has a reflecting surface that is curved concavely outward, The edge processing apparatus according to any one of claims 2 to 3, wherein the light irradiated from the reflecting portion to the edge region narrows in irradiation width as it approaches the substrate, and the position where the irradiation width is smallest is set to be located on the other side of one surface of the substrate.

7. 7. The edge processing apparatus according to claim 1, wherein the angle of the reflecting portion relative to the substrate is variable.

8. A peripheral portion processing method for processing a peripheral portion area on one surface of a substrate by irradiating the peripheral portion area with light, a light emitting unit disposed on the other side of the substrate held by a holding and rotating unit that holds and rotates the substrate; Light is emitted to a reflector disposed on one side of the substrate held by the holding and rotating unit; During the light emission, a part of the emitted light is blocked by an edge of the substrate held by the holding and rotating unit, an emission width of the light from the other surface side is equal to or greater than the radial length of the substrate in the peripheral edge region; the one surface is a front surface of a substrate, the reflecting unit is disposed above the substrate held by the holding and rotating unit, and the light emitting unit is disposed on a rear surface side of the substrate, the distance from the light emitting portion to the substrate is shorter than the distance from the reflecting portion to the substrate; The reflecting portion has a reflecting surface that is curved concavely outward, the light irradiated from the reflecting portion to the peripheral region has an irradiation width that narrows as it approaches the substrate, and the position at which the irradiation width is smallest is set to be located closer to the other surface than the one surface of the substrate; A peripheral processing method in which the width of the reflected light from the reflecting section toward the peripheral region changes depending on the amount of eccentricity of the substrate, as a result of a change in the extent to which part of the emission width of the light from the light emitting section is blocked by the edge of the substrate held by the holding rotation section.

9. A peripheral portion processing method for processing a peripheral portion area on one surface of a substrate by irradiating the peripheral portion area with light, a light emitting unit disposed on the other side of the substrate held by a holding and rotating unit that holds and rotates the substrate; Light is emitted to a reflector disposed on one side of the substrate held by the holding and rotating unit; During the light emission, a part of the emitted light is blocked by an edge of the substrate held by the holding and rotating unit, an emission width of the light from the other surface side is equal to or greater than the radial length of the substrate in the peripheral edge region; the one surface is a front surface of a substrate, the reflecting unit is disposed above the substrate held by the holding and rotating unit, and the light emitting unit is disposed on a rear surface side of the substrate, the distance from the light emitting portion to the substrate is shorter than the distance from the reflecting portion to the substrate; the light-emitting width is a light-emitting width realized by movement of the light-emitting unit in a radial direction of the substrate held by the holding rotation unit, A peripheral processing method in which the width of the reflected light from the reflecting section toward the peripheral region changes depending on the amount of eccentricity of the substrate, as a result of a change in the extent to which part of the emission width of the light from the light emitting section is blocked by the edge of the substrate held by the holding rotation section.

10. A peripheral portion processing method for processing a peripheral portion area on one surface of a substrate by irradiating the peripheral portion area with light, a light emitting unit disposed on the other side of the substrate held by a holding and rotating unit that holds and rotates the substrate; Light is emitted to a reflector disposed on one side of the substrate held by the holding and rotating unit; During the light emission, a part of the emitted light is blocked by an edge of the substrate held by the holding and rotating unit, an emission width of the light from the other surface side is equal to or greater than the radial length of the substrate in the peripheral edge region; the one surface is a front surface of a substrate, the reflecting unit is disposed above the substrate held by the holding and rotating unit, and the light emitting unit is disposed on a rear surface side of the substrate, the distance from the light emitting portion to the substrate is shorter than the distance from the reflecting portion to the substrate; The light from the light emitting unit is emitted obliquely outward, A peripheral processing method in which the width of the reflected light from the reflecting section toward the peripheral region changes depending on the amount of eccentricity of the substrate, as a result of a change in the extent to which part of the emission width of the light from the light emitting section is blocked by the edge of the substrate held by the holding rotation section.

Images