Bottom purge for semiconductor processing systems

Abstract

An exemplary substrate processing system may include multiple processing regions. The system may include a transfer region housing defining a transfer region fluidly coupled to the multiple processing regions. The system may include multiple substrate supports, each of which may be vertically movable between the transfer region and an associated processing region of the multiple processing regions. The system may include a transfer apparatus including a rotatable shaft extending through the transfer region housing. The transfer apparatus may include an end effector coupled to the rotatable shaft. The end effector may include a central hub defining a central opening fluidly coupled to a purge source. The end effector may also include multiple arms, with a number of arms equal to the number of substrate supports of the multiple substrate supports.

Description

[Technical Field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of and priority to U.S. patent application Ser. No. 16 / 844,121, entitled "BOTTOM PURGE FOR SEMICONDUCTOR PROCESSING SYSTEM," filed April 9, 2020, the entire contents of which are incorporated herein by reference.

[0002]

[0002] The present technology relates to semiconductor processes and equipment. In particular, the present technology relates to semiconductor substrate supports. [Background technology]

[0003]

[0003] Semiconductor processing systems often utilize cluster tools to integrate several process chambers. This configuration may facilitate the performance of several sequential processing operations without removing the substrate from the controlled processing environment, or allow similar processes to be performed on multiple substrates at once in different chambers. These chambers may include, for example, degassing chambers, pre-processing chambers, transfer chambers, chemical vapor deposition chambers, physical vapor deposition chambers, etch chambers, metrology chambers, and other chambers. The combination of chambers in the cluster tool, as well as the operating conditions and parameters under which these chambers are run, are selected to produce a particular structure using a particular process recipe and process flow.

[0004]

[0004] Some processing systems may include multiple processing and transport regions connected to each other. Depending on the layout and configuration of the components, various regions may be fluidly accessible to precursors delivered through the system. When deposition and cleaning precursors, including plasma-enhanced species of precursors, can access regions of the system, deposition or damage can occur within the system. In addition, certain layouts and flow patterns can create dead zones within the system, causing precursors to accumulate in certain regions and making it difficult to evacuate various regions of the system.

[0005]

[0005] Therefore, there is a need for improved systems and components that can be used to efficiently flow and evacuate materials within semiconductor processing chambers and systems. These and other needs are addressed by the present technology. Summary of the Invention

[0006] An exemplary substrate processing system may include multiple processing regions. The system may include a transfer region housing defining a transfer region fluidly coupled to the multiple processing regions. The system may include multiple substrate supports, each of which may be vertically movable between the transfer region and an associated processing region of the multiple processing regions. The system may include a transfer apparatus including a rotatable shaft extending through the transfer region housing. The transfer apparatus may include an end effector coupled to the rotatable shaft. The end effector may include a central hub defining a central opening fluidly coupled to a purge source. The end effector may also include multiple arms, with a number of arms equal to the number of substrate supports of the multiple substrate supports.

[0007] In some embodiments, a semiconductor processing chamber may include a plurality of purge channels having a number of purge channels equal to the number of substrate supports of the plurality of substrate supports. Each purge channel of the plurality of purge channels may extend through the transfer region housing proximate a separate substrate support of the plurality of substrate supports. Each processing region of the plurality of processing regions may be at least partially defined from above by a separate lid stack, and each lid stack may include a pumping liner fluidly coupled to an exhaust section of the substrate processing system. Each pumping liner may at least partially define an exhaust flow path from each processing region for purge gas supplied through the plurality of purge channels. The rotatable shaft may define one or more openings fluidly coupled to a purge source. The one or more openings may be configured to supply purge gas to a central space of the transfer region defined at least in part by a central hub of the end effector. The purge source may be configured to supply approximately 75% or more of the purge gas through the one or more openings compared to a central opening defined through the central hub. The plurality of substrate supports may include at least three substrate supports distributed around the transfer region, and the transfer apparatus may be centrally located between the plurality of substrate supports.

[0008] Some embodiments of the present technology may include a substrate processing system including multiple processing regions. The system may include a transfer region housing defining a transfer region fluidly coupled to the multiple processing regions. The system may include multiple substrate supports, each of which is vertically movable between the transfer region and an associated processing region of the multiple processing regions. The system may include multiple purge channels defined through the transfer region housing. The number of purge channels of the multiple purge channels may be equal to the number of substrate supports of the multiple substrate supports. The system may include a transfer device including a rotatable shaft extending through the transfer region housing. The transfer device may include an end effector coupled to the rotatable shaft. The end effector may include a central hub and may also include multiple arms, with the number of arms equal to the number of substrate supports of the multiple substrate supports.

[0009] In some embodiments, a central hub of the end effector may define an opening providing fluid access to the transfer region from a rotatable shaft of the transfer device. Each processing region of the multiple processing regions may be at least partially defined from above by a separate lid stack. Each lid stack may include a pumping liner fluidly coupled to an exhaust section of the substrate processing system. Each pumping liner may at least partially define an exhaust flow path from each processing region for purge gas supplied through the multiple purge channels. The rotatable shaft may define one or more openings fluidly coupled to a purge source. The one or more openings may be configured to supply purge gas to a central space of the transfer region at least partially defined by the central hub of the end effector.

[0010] Some embodiments of the present technology may include a method of semiconductor processing. The method may include delivering one or more process precursors through a plurality of lid stacks of a substrate processing system. Each lid stack of the plurality of lid stacks may fluidly access a processing region of a plurality of processing regions. Each processing region of the plurality of processing regions may be at least partially defined by a lid stack of the plurality of lid stacks and a substrate support of a plurality of substrate supports. The method may include delivering a purge gas into a transfer region of the substrate processing system through a plurality of purge channels extending through a transfer region housing that defines the transfer region. The transfer region may be fluidly coupled to the plurality of processing regions. The method may include evacuating the one or more process precursors and the purge gas through pumping liners of the plurality of lid stacks.

[0011] In some embodiments, a substrate processing system may include a transfer apparatus disposed within a transfer region. The transfer apparatus may include a rotatable shaft extending through a transfer region housing. The transfer apparatus may include an end effector coupled to the rotatable shaft. The end effector may include a central hub defining a central opening fluidly coupled to a purge source. The end effector may further include a plurality of arms, the number of arms being equal to the number of substrate supports of the plurality of substrate supports. The method may include supplying additional purge gas into the transfer region through the rotatable shaft from the central opening defined by the central hub. The rotatable shaft may define one or more openings fluidly coupled to the purge source. A central space of the transfer region may be at least partially defined by the central hub of the end effector. The method may include supplying additional purge gas into the central space of the transfer region through the rotatable shaft. The purge gas that may be supplied into the transfer region of the substrate processing system through the plurality of purge channels comprises a gas volume that is about 80% or less of the gas volume of one or more process precursors that is supplied through the plurality of lid stacks of the substrate processing system. The additional purge gas that may be supplied into the transfer region from the central opening defined by the central hub through the rotatable shaft comprises a total volume that is about 20% or less of the additional purge gas that is supplied into the central space of the transfer region through the rotatable shaft.

[0012] Such techniques may provide numerous advantages over conventional systems and techniques. For example, the purge channels may limit or prevent the formation of dead zones within the transport region or other regions of the system. Additionally, the flow of one or more purge gases may limit the entry of process precursors into the transport region within the system. These and other embodiments, along with their many advantages and features, are described in more detail below and in the accompanying drawings.

[0013]

[0013] A further understanding of the nature and advantages of the disclosed technology may be realized by reference to the remaining portions of the specification and the drawings. [Brief explanation of the drawings]

[0014] [Figure 1A]

[0014] A schematic top view of an exemplary processing tool according to some embodiments of the present technique is shown. [Figure 1B]

[0015] 1 shows a schematic partial cross-sectional view of an exemplary processing system in accordance with some embodiments of the present technique; [Figure 2]

[0016] 1 depicts a simplified isometric view of a transfer section of an exemplary substrate processing system, in accordance with some embodiments of the present technique; [Figure 3]

[0017] 1 shows a schematic isometric view of an exemplary exhaust system of an exemplary substrate processing system, in accordance with some embodiments of the present technique; [Figure 4]

[0018] 1 depicts a schematic partial cross-sectional view of a transfer section of an exemplary substrate processing system, in accordance with some embodiments of the present technique; [Figure 5A]

[0019] 1 depicts a schematic partial cross-sectional view of a transfer section of an exemplary substrate processing system, in accordance with some embodiments of the present technique; [Figure 5B]

[0020] 5B shows a schematic partial cross-sectional view of an exemplary transfer device taken along line AA of FIG. 5A, in accordance with some embodiments of the present technology. [Figure 6]

[0021] 1 illustrates selected operations in a method of semiconductor processing in accordance with some embodiments of the present technique. DETAILED DESCRIPTION OF THE INVENTION

[0015]

[0022] Some of the drawings are included as schematic diagrams. It should be understood that the drawings are for illustrative purposes and should not be considered to be to scale or proportion unless specifically stated. Furthermore, as schematic diagrams, the drawings are provided to aid in understanding and may not include all aspects or information compared to realistic depictions and may include exaggerated material for illustrative purposes.

[0016]

[0023] In the accompanying drawings, similar components and / or features may have the same reference numerals. Furthermore, various components of the same type may be distinguished according to the reference numeral, with a letter distinguishing between the similar components. When only a first reference numeral is used in this specification, the description is applicable to any of the similar components having the same first reference numeral, regardless of the letter.

[0017]

[0024] Substrate processing can involve time-consuming operations to add, remove, or otherwise modify material on wafers or semiconductor substrates. Efficient movement of substrates may reduce queue times and improve substrate throughput. To increase the number of substrates processed in a cluster tool, additional chambers may be incorporated onto the mainframe. While tool lengthening allows for the continued addition of transfer robots and processing chambers, this can become spatially inefficient as the footprint of the cluster tool expands. Therefore, the present technology may include cluster tools with an increased number of processing chambers within a defined footprint. To accommodate the limited footprint around the transfer robot, the technology may increase the number of processing chambers laterally outward from the robot. For example, some conventional cluster tools may include one or two processing chambers arranged around a centrally located section of the transfer robot to maximize the number of chambers radially around the robot. The present technology may extend this concept by incorporating additional chambers laterally outward as another row or group of chambers. For example, the techniques may be applied to a cluster tool that includes three, four, five, six, or more processing chambers accessible at each of one or more robot access locations.

[0018]

[0025] However, as additional process locations are added, accessing these locations from the central robot may no longer be feasible without additional transfer capabilities at each location. Conventional techniques may include wafer carriers on which substrates remain seated during transfer. However, wafer carriers can contribute to thermal non-uniformities and particle contamination on the substrate. The present technique overcomes these problems by incorporating a transfer section vertically aligned with the processing chamber region and a carousel or transfer device that may operate in cooperation with the central robot to access the additional wafer locations. The substrate support may then move vertically between the transfer region and the processing region to deliver substrates for processing.

[0019]

[0026] When the transfer region is fluidly accessible to the processing region, process gases or plasma-enhanced species may pass through the processing region and enter the transfer region. These active precursors, which may include deposition precursors, cleaning gases, or other materials, may cause deposition or other process interactions within the transfer region, resulting in deposition or damage to components in the transfer region. The present technique may overcome these problems by supplying one or more purge gases into the transfer region to help limit or prevent process precursors from entering the transfer region. When multiple processing chambers perform the same process as other processing chambers and purge gases are flowing toward each region, the material flows may balance, creating flow dead zones in the center or other regions within the transfer region or other regions of the processing system. The present technique may also limit the creation of these dead zones by incorporating additional purge channels directed toward one or more areas of the transfer region to provide flow through multiple areas of the system.

[0020]

[0027] While the remaining disclosure will routinely identify specific structures, such as a four-position transfer region, in which the present structures and methods may be used, it will be readily understood that the substrate support assemblies or components may equally be employed in any number of other systems or chambers. Thus, the present technology should not be considered limited to use with any particular chamber alone. Furthermore, to provide a foundation for the present technology, an exemplary tool system will be described, but it should be understood that the present technology may be incorporated into any number of semiconductor processing chambers and tools that may benefit from some or all of the described operations and systems.

[0021]

[0028] 1A shows a top view of one embodiment of a deposition, etch, bake, and cure chamber substrate processing tool or processing system 100 in accordance with some embodiments of the present technique. In the figure, a set of front-opening unified pods 102 supplies substrates of various sizes, which are received into a factory interface 103 by robotic arms 104a and 104b and placed into a load lock or low-pressure holding area 106. The substrates are then delivered to one of the substrate processing regions 108 and placed into chamber systems or quad sections 109a-c. The chamber systems or quad sections 109a-c may each be a substrate processing system having a transfer region fluidly coupled to multiple processing regions 108. While a quad system is shown, it should be understood that standalone chambers, twin chambers, and platforms incorporating other multiple chamber systems are equally encompassed by the present technique. A second robot arm 110 housed in a transfer chamber 112 may be used to transfer substrate wafers from the holding area 106 to the quad section 109 and vice versa. The second robot arm 110 may be housed in a transfer chamber to which each of the quad sections or processing systems may be connected. Each substrate processing region 108 may be provided to perform several substrate processing operations, including any number of deposition processes, including cyclical layer deposition, atomic layer deposition, chemical vapor deposition, physical vapor deposition, as well as etching, pre-cleaning, annealing, plasma treatment, degassing, orientation, and other substrate processes.

[0022]

[0029] Each quad section 109 may include a transfer region that may receive substrates from and deliver substrates to the second robot arm 110. The transfer region of the chamber system may be aligned with a transfer chamber having the second robot arm 110. In some embodiments, the transfer region may be laterally accessible to a robot. In subsequent operations, components of the transfer section may move the substrate vertically into the overlapping processing regions 108. Similarly, the transfer region may also be operable to rotate the substrate between positions within each transfer region. The substrate processing region 108 may include any number of system components for depositing, annealing, curing, and / or etching a material film on a substrate or wafer. In one configuration, two sets of processing regions, such as the processing regions in quad sections 109a and 109b, may be used to deposit material on a substrate, and a third set of processing chambers, such as the processing chambers or region in quad section 109c, may be used to cure, anneal, or process the deposited film. In another configuration, all three sets of chambers, such as all 12 chambers shown, may be configured to deposit and / or cure a film on a substrate.

[0023]

[0030] As shown in the figures, the second robot arm 110 may include two arms for simultaneously delivering and / or retrieving multiple substrates. For example, each quad section 109 may include two accesses 107 along a surface of the transfer region housing, which may be laterally aligned with the second robot arm. The accesses may be defined along a surface adjacent to the transfer chamber 112. In some embodiments, as shown, a first access may be aligned with a first substrate support of the quad section's plurality of substrate supports. Further, a second access may be aligned with a second substrate support of the quad section's plurality of substrate supports. In some embodiments, the first substrate support may be adjacent to the second substrate support, and the two substrate supports may define a first row of substrate supports. As shown in the illustrated configuration, the second row of substrate supports may be positioned laterally outward from the transfer chamber 112 and aft of the first row of substrate supports. The two arms of the second robot arm 110 may be spaced apart to allow the two arms to simultaneously enter a quad section or chamber system to deliver or retrieve one or two substrates to a substrate support in the transfer region.

[0024]

[0031] Any one or more of the described transfer regions may be incorporated into additional chambers separate from the fabrication system illustrated in various embodiments. It should be understood that additional configurations of deposition, etching, annealing, and curing chambers for material films are contemplated by processing system 100. Additionally, any number of other processing systems may be utilized with the present techniques, which may incorporate transfer systems for performing any of the specific operations, such as substrate transfer. In some embodiments, a processing system may provide access to multiple processing chamber regions while maintaining reduced pressure environments within various sections, such as the holding and transfer areas described above, allowing operations to be performed in multiple chambers while maintaining a specific reduced pressure environment between discrete processes.

[0025]

[0032] FIG. 1B illustrates a schematic cross-sectional elevation view of one embodiment of an exemplary processing tool, such as through a chamber system, in accordance with some embodiments of the present technique. FIG. 1B may illustrate a cross-sectional view through any two adjacent processing regions 108 in any quad section 109. The elevation view may illustrate the configuration or fluid coupling of one or more processing regions 108 with a transfer region 120. For example, a continuous transfer region 120 may be defined by a transfer region housing 125. The housing may define an open interior space in which several substrate supports 130 may be disposed. For example, as shown in FIG. 1A, an exemplary processing system may include four or more substrate supports 130 distributed within the housing around the transfer region. The substrate supports may be pedestals as illustrated, although several other configurations may be used. In some embodiments, the pedestal may be vertically movable between the transfer region 120 and a processing region overlapping the transfer region. The substrate support may be vertically movable along a central axis of the substrate support along a path between a first position and a second position within the chamber system. Thus, in some embodiments, each substrate support 130 may be axially aligned with an overlapping processing region 108 defined by one or more chamber components.

[0026]

[0033] The open transfer region may provide a transfer device 135, such as a carousel, with the ability to engage and move substrates, including rotating them between various substrate supports. The transfer device 135 may be rotatable about a central axis, allowing the substrate to be positioned for processing in any of the processing regions 108 in the processing system. The transfer device 135 may include one or more end effectors that can engage the substrate from above, below, or at the outer edge of the substrate to move it around the substrate support. The transfer device may receive a substrate from a transfer chamber robot, such as the robot 110 described above. The transfer device may then rotate the substrate to an alternate substrate support to facilitate the delivery of additional substrates.

[0027]

[0034] Once positioned and awaiting processing, the transfer apparatus may position an end effector or arm between the substrate supports. This allows the substrate support to be lifted past the transfer apparatus 135 and deliver the substrate into the processing region 108. The processing region 108 may be vertically offset from the transfer region. For example, as shown, substrate support 130b may deliver the substrate to processing region 108b, while substrate support 130a may deliver the substrate into processing region 108a. This may be done with two other substrate supports and processing regions, as well as additional substrate supports and processing regions in embodiments where additional processing regions are included. In this configuration, when the substrate support is operably engaged to process a substrate, such as in the second position, it may at least partially define the processing region 108 from below, and the processing region may be axially aligned with the associated substrate support. The processing region may be defined from above by the face plate 140, as well as other lid stack components. In some embodiments, each processing region may have an individual lid stack component, while in some embodiments, multiple components may house multiple processing regions 108. Based on this configuration, in some embodiments, each processing region 108 may be fluidly coupled to the transfer region while being fluidly isolated from above from each other processing region within the chamber system or quad section.

[0028]

[0035] In some embodiments, face plate 140 may act as an electrode in the system for generating a localized plasma within processing region 108. As shown, each processing region may utilize or incorporate a separate face plate. For example, face plate 140a may be included to define processing region 108a from above, and face plate 140b may be included to define processing region 108b from above. In some embodiments, the substrate support may act as a companion electrode for generating a capacitively coupled plasma between the face plate and the substrate support. Pumping liner 145 may at least partially define processing region 108 radially or laterally, depending on the spatial geometry. Again, a separate pumping liner may be utilized for each processing region. For example, pumping liner 145a may at least partially define processing region 108a radially, and pumping liner 145b may at least partially define processing region 108b radially. A blocker plate 150 may be disposed between the lid 155 and the face plate 140 in some embodiments, and again, individual blocker plates may be included to facilitate fluid distribution within each processing region. For example, blocker plate 150a may be included for distribution directed toward processing region 108a, and blocker plate 150b may be included for distribution directed toward processing region 108b.

[0029]

[0036] The lid 155 may be a separate component for each processing region or may include one or more common features. In some embodiments, as shown, the lid 155 may be a single component defining multiple openings 160 for fluid supply to the individual processing regions. For example, the lid 155 may define a first opening 160a for fluid supply to processing region 108a, and the lid 155 may define a second opening 160b for fluid supply to processing region 108b. Additional openings, if included, may be defined for additional processing regions within each section. In some embodiments, each quad section 109, or a section of multiple processing regions that may accommodate more or fewer than four substrates, may include one or more remote plasma units 165 for supplying plasma effluents into the processing chamber. In some embodiments, individual plasma units may be incorporated for each chamber processing region, while in some embodiments, fewer remote plasma units may be used. For example, as shown, a single remote plasma unit 165 may be used for multiple chambers, such as two, three, four, or more, up to all the chambers for a particular quad section. Piping may extend from the remote plasma unit 165 to each opening 160 for delivery of plasma effluent for processing or cleaning in embodiments of the present technology.

[0030]

[0037] In some embodiments, a purge channel 170 may extend through the transfer region housing proximate or near each substrate support 130. For example, multiple purge channels may extend through the transfer region housing to provide fluid access for fluidly coupled purge gas supplied into the transfer region. The number of purge channels may be the same as or different from (including greater than or less than) the number of substrate supports in the processing system. For example, a purge channel 170 may extend through the transfer region housing below each substrate support. Two substrate supports 130 are shown, with a first purge gas channel 170a extending through the housing proximate to substrate support 130a and a second purge gas channel 170b extending through the housing proximate to substrate support 130b. It should be understood that any additional substrate supports may similarly have plumbed purge channels extending through the transfer region housing to provide purge gas into the transfer region.

[0031]

[0038] When purge gas is supplied through one or more of the purge channels, the purge gas may also be exhausted through the pumping liner 145. The pumping liner 145 may provide all exhaust paths from the processing system. As a result, in some embodiments, both the process precursor and the purge gas may be exhausted through the pumping liner. The purge gas may flow upward to the associated pumping liner; for example, purge gas flowed through purge channel 170b may be exhausted from the processing system through pumping liner 145b. As will be explained further below, the flow of purge gas may be supplied to limit intrusion of process precursors into the transport region of the system. Because the flow profile of the purge gas may extend upward toward the associated pumping liner, purge gas flow dead zones may be created in certain regions of the transport region, such as the center. As will be explained below, in some embodiments of the present technology, additional purge gas may be flowed through and around the transport device 135 to limit the accumulation of process precursors in these regions.

[0032]

[0039] As described above, the processing system 100, and more specifically, a quad section or chamber system incorporated into the processing system 100 or other processing systems, may include a transfer section disposed below the illustrated processing chamber region. FIG. 2 shows a schematic isometric view of the transfer section of an exemplary chamber system 200 in accordance with some embodiments of the present technique. FIG. 2 may illustrate additional aspects or variations of aspects of the transfer region 120 described above, which may include any of the components or features described above. The illustrated system may include a transfer region housing 205 defining a transfer region in which several components may be included. The transfer region may further be defined, at least in part, from above by a processing chamber or processing region fluidly coupled to the transfer region, such as the processing chamber region 108 shown in the quad section 109 of FIG. 1A. Sidewalls of the transfer region housing may define one or more access locations 207. As described above, substrates may be delivered and retrieved through the one or more access locations 207, such as by the second robot arm 110. The access locations 207 may be slit valves or other sealable access locations, which in some embodiments include doors or other sealing mechanisms to provide an airtight environment within the transfer region housing 205. While illustrated as having two such access locations 207, it should be understood that in some embodiments, only a single access location 207 may be included, as well as multiple access locations on multiple sides of the transfer region housing. It should also be understood that the illustrated transfer section may be sized to accommodate any substrate size, including 200 mm, 300 mm, 450 mm, or larger or smaller substrates, including substrates characterized by any number of dimensions or shapes.

[0033]

[0040] Within the transfer region housing 205, there may be multiple substrate supports 210 arranged around the volume of the transfer region. While four substrate supports are shown, it should be understood that any number of substrate supports is similarly encompassed by embodiments of the present technology. For example, according to embodiments of the present technology, three or more, four or more, five or more, six or more, eight or more, or more substrate supports 210 may be housed within the transfer region. The second robot arm 110 may deliver substrates to one or both of the substrate supports 210a or 210b through the access 207. Similarly, the second robot arm 110 may retrieve substrates from these locations. Lift pins 212 may protrude from the substrate support 210 to allow the robot access below the substrate. In some embodiments, the lift pins may be fixed on the substrate support, or the substrate support may retract downward, or the lift pins may further rise or lower through the substrate support. The substrate support 210 may be vertically movable and, in some embodiments, may extend to a processing chamber region of the substrate processing system, such as processing chamber region 108, located above the transfer region housing 205.

[0034]

[0041] The transfer region housing 205 may provide access 215 for an alignment system. This may include an aligner, which may extend through an opening in the transfer region housing as shown and may operate in conjunction with a laser, camera, or monitoring device projecting or transmitting through an adjacent opening to determine whether a moving substrate is properly aligned. The transfer region housing 205 may also include a transfer apparatus 220, which may be operated in several ways to position and move substrates between various substrate supports. In one example, the transfer apparatus 220 may move substrates on substrate supports 210a and 210b to substrate supports 210c and 210d, which may allow additional substrates to be delivered into the transfer chamber. The additional transfer operation may include rotating the substrate between the substrate supports for further processing in an overlapping processing region.

[0035]

[0042] The transfer apparatus 220 may include a central hub 225 that may include one or more shafts extending into the transfer chamber. An end effector 235 may be coupled to the shaft. The end effector 235 may include multiple arms 237 extending radially or laterally outward from the central hub. While illustrated as having a central body with arms extending therefrom, in various embodiments, the end effector may further include separate arms, each coupled to a shaft or central hub. Any number of arms may be included in embodiments of the present technology. In some embodiments, the number of arms 237 may be similar to or equal to the number of substrate supports 210 included in the chamber. Thus, as illustrated, for four substrate supports, the transfer apparatus 220 may include four arms extending from the end effector. The arms may be characterized by any number of shapes and profiles, such as linear or arcuate profiles, as well as any number of distal profiles including hooks, rings, forks, or other designs for supporting and / or providing access to the substrate, such as for alignment or engagement.

[0036]

[0043] As described above, in some embodiments, a central purge may be included within the processing region. For example, when each of the four substrate supports 210 includes a purge channel adjacent to the stem and extending through the housing of the transfer chamber, the flow may not extend over the central hub 225. As a result, processing precursors that may flow in this region may accumulate and not be purged from the transfer region. To limit or prevent this effect, in some embodiments, the present technique may provide an additional purge through and / or around the transfer apparatus. The flow may extend from below the end effector, as will be described below, and the flow may also extend through a central opening 240 defined through the central hub. The opening may provide fluid access into the transfer region from a shaft, such as a rotatable shaft of a transfer apparatus to which the end effector may be coupled. A purge source may be fluidly coupled to the shaft to provide a purge path through the central opening.

[0037]

[0044] The end effector 235, or components or portions of the end effector, can be used to contact the substrate during transfer or movement. These components as well as the end effector can be made from or include several materials, including conductive and / or insulating materials. In some embodiments, the materials can be coated or plated to withstand contact with precursors or other chemicals that may migrate into the transfer chamber from overlying processing chambers.

[0038]

[0045] Additionally, materials may be provided or selected to withstand other environmental characteristics, such as temperature. In some embodiments, the substrate support may be operable to heat a substrate disposed thereon. The substrate support may be configured to elevate the temperature of the surface or substrate to about 100°C or higher, about 200°C or higher, about 300°C or higher, about 400°C or higher, about 500°C or higher, about 600°C or higher, about 700°C or higher, about 800°C or higher, or higher. Any of these temperatures may be maintained during operation, and thus components of the transfer apparatus 220 may be exposed to any of these listed temperatures or temperatures included. Consequently, in some embodiments, any of the materials may be selected to accommodate these temperature regimes and may include materials such as ceramics and metals, which may be characterized by relatively low coefficients of thermal expansion or other beneficial properties.

[0039]

[0046] The component joints may also be adapted for operation in high temperature and / or corrosive environments. For example, if the end effector and end portion are each ceramic, the joints may include press joints, snap joints, or other joints that may not include additional materials, such as bolts, that expand and contract with temperature and may crack the ceramic. In some embodiments, the end portion may be continuous with the end effector or monolithically formed therewith. Any number of other materials that may facilitate operation or resistance during operation may be utilized and are also encompassed by the present technology.

[0040]

[0047] FIG. 3 shows a schematic isometric view of an exemplary exhaust system 300 of an exemplary substrate processing system, in accordance with some embodiments of the present technique. The drawing may depict aspects of the processing system and components described above, and may depict additional aspects of the system. The drawing may depict the system with some components removed to facilitate illustration of the exhaust system of the processing system. It should be understood that the exhaust system 300 may include any aspect of any portion of a processing system described or illustrated elsewhere, and may depict aspects of an exhaust system incorporated into any of the systems described elsewhere. For example, the exhaust system 300 may depict the system with some of the lid stack components described above removed. It should be understood that components may still be incorporated, such as including pumping liners at each processing position.

[0041]

[0048] As previously described, processing systems according to some embodiments of the present technique may include substrate supports 305 that may be moved vertically from the transfer region 310, which may include any aspect of the chamber section 200 described above. The substrate supports 305 may each extend to an associated processing region, where they may at least partially define the processing region from below and a faceplate or other lid stack component at least partially defines the processing region from above. Pumping liners may at least partially define the processing region radially and may provide exhaust paths as described above. The exhaust paths may feed materials into an exhaust system as shown in the figures. Each pumping liner may provide access to an exhaust port 315 that may lead to a foreline. The foreline may fluidly couple each of the exhaust ports 315 to a pumping system configured to draw materials from the system.

[0042]

[0049] As shown, the exhaust port 315 may be the only exhaust path from the processing system, including from the transfer region 310. Additionally, as shown, the substrate support 305 may not fully seat or seal with lid stack components, such as the lower lid plate 320, which may support individual lid stack components and at least partially define the processing region around the substrate support. The lower lid plate 320 may also define the transfer region from above. As a result, each processing region may then be fluidly coupled with the transfer region around the substrate support. When purge gas is flowed from purge channels proximate the substrate support, the gas may therefore be drawn up through the lower lid plate to the pumping liner around the substrate support before flowing through the pumping liner into the exhaust system. The pumping liner may therefore define an exhaust flow path from each processing region for both process precursors, which may be supplied from above the pumping liner, and purge gas, which may be supplied from the transfer region below the pumping liner.

[0043]

[0050] While each processing region performs similar operations, which may include supplying similar amounts of purge gas from the processing region around each substrate support, the illustrated central region may not have a significant flow across it because the purge gas may generally flow upward to the associated processing region and not across or between the substrate supports. This may create a dead zone in the central region of the transfer region, which may allow process precursors accessing the transfer region to accumulate between the substrate supports. The transfer region may be above the transfer apparatus. If material is allowed to accumulate, deposition may interfere with the operation of the transfer apparatus or the cleaning gas may damage the end effector.

[0044]

[0051] To limit the accumulation of process materials or precursors in the transfer region, in some embodiments of the present technique, an additional purge flow may be provided into the processing region. FIG. 4 shows a schematic partial cross-sectional view of a transfer section 400 of an exemplary substrate processing system in accordance with some embodiments of the present technique, and may show a cross-section through a transfer apparatus 405. The transfer apparatus, as described above, may be disposed within the transfer region. The transfer region may be defined from above by a lower lid plate 410 and from below by a transfer region housing 412. When the substrate support 415 is in a raised position, process precursors may be allowed to accumulate in a central area of ​​the transfer region, which may be above the transfer apparatus. The present technique may create one or more additional purge channels to limit accumulation and improve purging from the transfer region.

[0045]

[0052] As shown, the transfer apparatus 405 may include a rotatable shaft 420 coupled to an end effector 425. The end effector may include a central hub 427 coupled to the rotatable shaft. The end effector may also include multiple arms 430 extending from the central hub. As described above, the central hub 427 may define an opening through which purge gas may be supplied. The purge gas may flow up through the shaft 420 and be supplied to a transfer region above the transfer apparatus. The transfer apparatus may be centrally positioned between the substrate supports and adjacent to a flow dead zone within the transfer region. A purge source 435 may be fluidly coupled to the rotatable shaft to supply purge gas through the central hub opening. Additionally, the purge source may be coupled to a baffle plate or may be accessed through the transfer region housing to a central space formed between the transfer apparatus and the transfer region housing 412. As shown, purge gas may be supplied through a rotatable shaft of the transfer device into the area directly above the transfer device, such as between the central hub and the lower lid plate 410 .

[0046]

[0053] Additionally, purge gas may be supplied to a central space defined below the transfer apparatus, such as between the central hub and the transfer region housing, as shown. The purge gas supplied below the transfer apparatus may then flow radially outward to interact with the purge flow extending near each substrate support and purge the central zone of the transfer region. The end effector 425 may facilitate equal outward flow to limit any disparate effects on the flow profiles extending toward each pumping liner. This may facilitate maintaining similar processes and effects in each processing region and may limit any turbulence that could generate variations in flow directed toward one or more processing regions. To further limit circulation or jetting of flow from the central opening, the amount of purge gas flowing through the central opening may be limited in some embodiments. For example, the volume of purge gas flowing through the central opening may be no more than about 40% of the volume flowing through the central space during any unit of time. Additionally, the volume flowing through the central opening may be about 35% or less of the volume flowing into the central space, about 30% or less, about 25% or less, about 20% or less, about 15% or less, about 10% or less, about 5% or less, or less, which may further promote equal flow toward each processing region of the system.

[0047]

[0054] 5A shows a schematic partial cross-sectional view of a transfer section 500 of an exemplary substrate processing system in accordance with some embodiments of the present technique, which may illustrate further embodiments for flowing purge gas into a central zone between a transfer apparatus and a transfer region housing. As shown, the transfer apparatus 505 may include a rotatable shaft 510 coupled to an end effector 515. The end effector 515 may include a central hub 520 having one or more arms 525 extending from the central hub. An opening 522 may be defined in the central hub and may provide a fluid coupling through a channel through the shaft 510. Purge gas supplied from a purge source 527 may thereby be flowed to a region above the transfer apparatus.

[0048]

[0055] Additionally, one or more openings 535 may be defined in the shaft 510. They may also be fluidly coupled to a purge source 527 to supply purge gas to a central space formed between the end effector 515 and the transfer region housing 530. In some embodiments, the openings 535 may include baffles or chokes, as shown, which may increase the amount of flow exiting the shaft into the central space and decrease the amount of flow supplied through the central opening 522. This may restrict jetting or purge flow from the transfer device, which may make it difficult to ensure equal flow to each of the processing regions to evacuate the system.

[0049]

[0056] FIG. 5B shows a schematic partial cross-sectional view of an exemplary transfer device shaft 510 along line A-A in FIG. 5A in accordance with some embodiments of the present technology. As shown, one or more openings 535 may be defined through the transfer device shaft 510. While four openings are shown, any number of openings may be formed, including about one or more, about two or more, about three or more, about four or more, about five or more, about six or more, or more, which may improve flow uniformity within the central space defined below the transfer device. Additionally, one or more baffles or chokes may extend through the shaft into the central channel and direct flow toward the openings. This may be used to reduce the amount of flow that may extend through the central opening of the central hub by forming a reduced path 540 extending through the opening to the central space of the transfer region between the central hub of the transfer device and the transfer region housing. The choke may reduce the volume of purge gas supplied through the central opening compared to the openings 535 to any of the percentages or ranges described above. By supplying a purge gas through one or each of the central opening of the transfer device and the central space of the transfer region, flow dead zones may be limited or prevented, thereby ensuring complete removal of the precursor.

[0050]

[0057] FIG. 6 illustrates selected operations in a method 600 of semiconductor processing in accordance with some embodiments of the present technique. The method may be performed in various processing systems, including the processing system 100 described above. The method may include performing a purging operation in a transfer region of the processing system during semiconductor processing or chamber cleaning, which may limit material accumulation in the transfer region, as described above. Method 600 may include several optional operations that may or may not be specifically associated with some embodiments of methods in accordance with the present technique. For example, many operations are described to provide a broader range of structures and operations that may be performed, but they are not critical to the present technique or may be performed in alternative ways, as may be readily understood. The method may be performed in any processing chamber or system that includes any of the components, configurations, or aspects described above, including any aspect of the transfer apparatus or exhaust system described above. The method may also be performed in any other processing chamber that may benefit from purging in accordance with embodiments of the present technique.

[0051]

[0058] Method 600 may include additional operations prior to the initiation of the recited operations. For example, the additional processing operations may include delivering a substrate into a transfer region, rotating the substrate between substrate supports, and performing any amount of substrate processing within the processing system or any other processing chamber. A substrate support, such as in a transfer region, on which the substrate may be placed may be moved to a processing region. The processing region may overlap with the transfer region, as described above. In operation 605, one or more processing precursors may be delivered to a processing region. This may include delivery to multiple processing regions, such as through individual lid stacks, as described above. As described above, each processing region may be at least partially defined by an associated lid stack, substrate support, and pumping liner through which processing and purge materials may be evacuated from the system.

[0052]

[0059] In operation 610, one or more purge gases may be supplied into a transfer region extending below each processing region. The purge gas may be flowed through one or more purge channels, such as purge channel 170. The purge channels may be disposed proximate each substrate support and may extend through the transfer region housing. In some embodiments, purge gas may also be provided through a rotatable shaft, which may supply additional purge gas into the transfer region, such as through a central opening defined by the central hub of the transfer apparatus. Additionally, purge gas may be supplied through baffles at the bottom of the transfer region around the shaft of the transfer apparatus, or through openings in the shaft of the transfer apparatus as described above.

[0053]

[0060] In operation 615, the processing system may exhaust one or more process precursors, process by-products, and a purge gas supplied through the transfer region. As described above, by exhausting the purge gas through a pumping liner and exhaust system, the purge gas may provide a barrier to limit or prevent the process precursors from accumulating in the transfer region.

[0054]

[0061] The purge gas may include any material that may be inert or non-reactive with one or more components of the system, such as nitrogen, argon, helium, hydrogen, oxygen, or any other process precursor or carrier gas that may limit its effect on the process being performed. The purge gas may be provided to provide a barrier or curtain to restrict the flow of process precursors from the processing region, so that the flow rate may be less than the flow rate of the process precursors. For example, in some embodiments, the purge gas provided from each purge channel may be provided at about 90% or less by volume of the flow rate of the process precursor provided through the associated lid stack. Additionally, the purge gas provided may be about 85% or less of the flow rate of the process precursors, and may be about 80% or less, about 75% or less, about 70% or less, about 65% or less, about 60% or less, about 55% or less, about 50% or less, or even lower.

[0055]

[0062] As previously mentioned, purge gas supplied above and below the transfer apparatus may be provided to prevent the creation of dead zones where accumulation of processing material may occur. To limit the impact of supply on balanced flow rates to each processing region, the amount of purge gas supplied centrally may, in some embodiments, be less than the amount supplied to any individual purge channel. For example, in some embodiments, the volume of purge gas supplied centrally through and / or around the transfer apparatus may be less than about 80% of the volume supplied from any individual purge channel proximate an individual substrate support. Additionally, the centrally supplied purge gas may be about 75% or less of the volume supplied from any individual purge channel, and may be about 70% or less of the volume, about 65% or less of the volume, about 60% or less of the volume, about 55% or less of the volume, about 50% or less of the volume, about 45% or less of the volume, about 40% or less of the volume, about 35% or less of the volume, about 30% or less of the volume, about 25% or less of the volume, about 20% or less of the volume, about 15% or less of the volume, about 10% or less of the volume, or less. As a result, when multiple purge channels are provided with multiple substrate supports, the volume of purge gas supplied to the center may be about 40% or less of the total volume of the additional purge gas supplied through the purge channels and the process precursor supplied through the lid stack, about 35% or less of the total volume, about 30% or less of the total volume, about 25% or less of the total volume, about 20% or less of the total volume, about 15% or less of the total volume, about 10% or less of the total volume, about 5% or less of the total volume, about 1% or less of the total volume, or even less.

[0056]

[0063] To further limit jetting of purge gas from the central opening through the transfer device, in some embodiments, the amount of purge gas supplied through the central opening may be about 50% or less of the total volume of purge gas supplied through the rotatable shaft and / or transfer device, about 45% or less of the total volume, about 40% or less of the total volume, about 35% or less of the total volume, about 30% or less of the total volume, about 25% or less of the total volume, about 20% or less of the total volume, about 15% or less of the total volume, about 10% or less of the total volume, about 5% or less of the total volume, about 1% or less of the total volume, or even less.

[0057]

[0064] The volume of purge gas supplied around and / or through the transfer apparatus may be based, at least in part, on the volume of the transfer region, the volume of precursor supplied through the lid stack, and any other characteristics of the process and chamber configuration. In some embodiments, the total volume of purge gas supplied through and / or around the transfer apparatus shaft may be about 5 slm or less, about 4 slm or less, about 3 slm or less, about 2 slm or less, about 1 slm or less, about 0.5 slm or less, about 0.3 slm or less, or less. In some embodiments, the supply may be at a flow rate of about 3 slm or less, which may limit thermal effects on the transfer apparatus. Because the transfer apparatus may provide a flow path for the purge gas, in some embodiments, the flow rate of the purge gas may be controlled to limit cooling along any aspect of the arm or transfer apparatus. Providing purge gas through the transfer region of a processing system according to some embodiments of the present technique may limit or prevent the flow of process precursors from flowing into the transfer region and / or accumulating in the transfer region.

[0058]

[0065] In the foregoing description, for purposes of explanation, numerous details are presented in order to facilitate an understanding of various embodiments of the present technology. However, it will be apparent to one skilled in the art that particular embodiments may be practiced without some of these details, or with additional details.

[0059]

[0066] Although several embodiments have been disclosed, those skilled in the art will recognize that various modifications, alternative structures, and equivalents may be used without departing from the spirit of the embodiments. Additionally, some well-known processes and elements have not been described to avoid unnecessarily obscuring the present technology. Therefore, the above description should not be construed as limiting the scope of the present technology. Furthermore, while a method or process may be described sequentially or in steps, it should be understood that steps may be performed simultaneously or in a different order than described.

[0060]

[0067] Where a range of values ​​is given, unless the context clearly dictates otherwise, each intervening value between the upper and lower limit of that range is specifically disclosed, to the smallest unit of the lower limit. Any subranges between any stated or unstated intervening value in a stated range, and any other stated or intervening value in that stated range, are also included. The upper and lower limits of these smaller ranges may be individually included or excluded from the range, and each range in which either, neither, or both limits are included in the subranges is also encompassed within the scope, subject to any explicitly excluded limit in the stated range. When a stated range includes one or both of the limits, ranges excluding either or both of those included limits are also included.

[0061]

[0068] As used in this specification and claims, the singular forms "a," "an," and "the" include plural referents unless the context clearly dictates otherwise. Thus, for example, a reference to a "shaft" includes a plurality of such shafts, a reference to an "aperture" includes a reference to one or more connectors and equivalents thereof known to those skilled in the art, and so forth.

[0062]

[0069] Additionally, the terms "comprise(s)", "comprising", "contain(s)", "containing", "include(s)", and "including", when used in this specification and claims, are intended to specify the presence of stated features, integers, components, or steps, but do not exclude the presence or addition of one or more other features, integers, components, steps, operations, or groups.

Claims

1. 1. A substrate processing system, comprising: Multiple processing areas, a transfer region housing defining a transfer region fluidly coupled to the plurality of processing regions; a plurality of substrate supports, each substrate support of the plurality of substrate supports being vertically movable between the transfer region and an associated one of the plurality of processing regions; and a transfer device, a rotatable shaft extending through the transfer region housing; and an end effector coupled to the rotatable shaft, the end effector including a central hub defining a central opening fluidly coupled to a purge source, the end effector further including a plurality of arms having a number of arms equal to a number of substrate supports of the plurality of substrate supports; a substrate processing system, wherein the rotatable shaft defines one or more openings fluidly coupled to the purge source, the one or more openings configured to supply purge gas to a central space of the transfer region defined at least in part by the central hub of the end effector.

2. The substrate processing system of claim 1 , further comprising a plurality of purge channels having a number of purge channels equal to the number of substrate supports of the plurality of substrate supports.

3. The substrate processing system of claim 2 , wherein each purge channel of the plurality of purge channels extends through the transfer region housing proximate to a separate substrate support of the plurality of substrate supports.

4. 3. The substrate processing system of claim 2, wherein each processing region of the plurality of processing regions is at least partially defined from above by a separate lid stack, each lid stack comprising a pumping liner fluidly coupled to an exhaust of the substrate processing system.

5. 5. The substrate processing system of claim 4, wherein each pumping liner at least partially defines an exhaust flow path from a respective processing region for purge gas supplied through the plurality of purge channels.

6. 6. The substrate processing system of claim 5, wherein the purge source is configured to provide 75% or more of the purge gas through the one or more openings compared to the central opening defined through the central hub.

7. 2. The substrate processing system of claim 1, wherein the plurality of substrate supports comprises at least three substrate supports distributed around the transfer region, and the transfer apparatus is centrally positioned between the plurality of substrate supports.

8. 1. A substrate processing system, comprising: Multiple processing areas, a transfer region housing defining a transfer region fluidly coupled to the plurality of processing regions; a plurality of substrate supports, each substrate support of the plurality of substrate supports being vertically movable between the transfer region and an associated one of the plurality of processing regions; a plurality of purge channels defined through the transfer region housing, the number of purge channels in the plurality of purge channels equal to the number of substrate supports in the plurality of substrate supports; and a transfer device, a rotatable shaft extending through the transfer region housing; and an end effector coupled to the rotatable shaft, the end effector including a central hub, the end effector further including a plurality of arms having a number of arms equal to the number of substrate supports of the plurality of substrate supports; a substrate processing system, wherein the rotatable shaft defines one or more openings fluidly coupled to a purge source, the one or more openings configured to supply purge gas to a central space of the transfer region defined at least in part by the central hub of the end effector.

9. The substrate processing system of claim 8 , wherein the central hub of the end effector defines an opening providing fluid access from the rotatable shaft of the transfer apparatus to the transfer region.

10. 10. The substrate processing system of claim 8, wherein each processing region of the plurality of processing regions is at least partially defined from above by a separate lid stack, each lid stack comprising a pumping liner fluidly coupled to an exhaust of the substrate processing system.

11. 9. The substrate processing system of claim 8, wherein each pumping liner at least partially defines an exhaust flow path from a respective processing region for purge gas supplied through the plurality of purge channels.

12. 1. A method of semiconductor processing comprising: delivering one or more process precursors through a plurality of lid stacks of a substrate processing system, each lid stack of the plurality of lid stacks fluidly accessing a processing region of a plurality of processing regions, each processing region of the plurality of processing regions being defined at least in part by a lid stack of the plurality of lid stacks and a substrate support of a plurality of substrate supports; supplying a purge gas into a transfer region of the substrate processing system through a plurality of purge channels extending through a transfer region housing defining the transfer region, the transfer region being fluidly coupled to the plurality of processing regions; evacuating the one or more process precursors and the purge gas through pumping liners of the plurality of lid stacks; and supplying additional purge gas into the central space of the transfer region through a rotatable shaft; The substrate processing system includes a transfer device disposed within the transfer region, the transfer device comprising: the rotatable shaft extending through the transfer region housing; and an end effector coupled to the rotatable shaft, the end effector including a central hub defining a central opening fluidly coupled to a purge source, the end effector further including a plurality of arms having a number of arms equal to a number of substrate supports of the plurality of substrate supports; The method, wherein the rotatable shaft defines one or more openings fluidly coupled to the purge source, and the central space of the transfer region is at least partially defined by the central hub of the end effector.

13. 13. The method of semiconductor processing of claim 12, wherein the purge gas supplied through a plurality of purge channels into a transfer region of the substrate processing system comprises a gas volume that is 80% or less of the gas volume of the one or more process precursors supplied through the plurality of lid stacks of the substrate processing system.

14. 14. The semiconductor processing method of claim 13, wherein the additional purge gas supplied through the rotatable shaft and from the central opening defined by the central hub into the transfer region is 20% or less of the total volume of the additional purge gas supplied through the rotatable shaft and into the central space of the transfer region.

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