Embedded package heat dissipation structure, manufacturing method thereof, and semiconductor

Abstract

To provide an embedded package heat dissipation structure, a manufacturing method for the same, and a semiconductor.SOLUTION: A manufacturing method for an embedded package heat dissipation structure includes the steps of: forming a semi-finished board comprising an embedded device and a first metal layer, where the first metal layer is disposed in close contact with a non-pin surface of the embedded device; forming a heat sink in close contact with the non-pin surface of the embedded device based on the first metal layer; preparing a heat-dissipating copper column on the heat sink; providing a dielectric layer covering the heat-dissipating copper column; pressing a second metal layer on the dielectric layer; partially etching the second metal layer and the dielectric layer to form a micro-channel; removing a remaining portion of the second metal layer; and compressing a sealing layer on the dielectric layer to seal the micro-channel in a direction perpendicular to the semi-finished board, to obtain the embedded package heat dissipation structure.EFFECT: Heat dissipation efficiency of the embedded device can be improved.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present application relates to the technical field of semiconductor fabrication, and in particular to an embedded package heat dissipation structure and a method for fabricating the same, and a semiconductor. [Background technology]

[0002] In the prior art, a typical embedded packaging method involves mounting a device such as a chip in a polymer frame or core material with a pre-installed cavity, and then packaging it with a molding material. For example, as in the pre-installed cavity organic substrate frame disclosed in Patent Document 1, active and passive components are mounted in the pre-installed cavity, and then packaging is performed by compressing a dielectric material, as in the packaging method disclosed in Patent Document 2.

[0003] The conventional method of mounting a device such as a chip on a polymer frame or core material in a pre-installed cavity and then packaging it with a molding material has the following drawbacks: With the development of high-frequency, high-speed, and high-power products, the heat dissipation requirements for embedded package products are increasing, and no matter how good the heat dissipation properties of organic polymer materials are, they have limitations in their heat dissipation characteristics and cannot solve the heat dissipation problems of high-frequency, high-speed, and high-power embedded products. Therefore, a new method for manufacturing an embedded package heat dissipation structure is needed. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Chinese Patent Application Publication No. 105679682 [Patent Document 2] Chinese Patent Application Publication No. 104332414 Summary of the Invention [Problem to be solved by the invention]

[0005] The purpose of the present application is to solve, at least to some extent, one of the technical problems present in the prior art.

[0006] Therefore, one objective of the embodiments of the present application is to provide an embedded package heat dissipation structure and a manufacturing method thereof, and a semiconductor, which can improve the heat dissipation effect of the embedded device. [Means for solving the problem]

[0007] In order to achieve the above technical objectives, the technical solutions used in the embodiments of the present application include: forming a semi-finished board including an embedded device and a first metal layer, the first metal layer disposed in intimate contact with a non-pin surface of the embedded device; forming a heat sink based on the first metal layer, the heat sink being in close contact with a non-pin surface of the embedded device; fabricating a heat dissipation copper pillar on the heat dissipation plate; providing a dielectric layer covering the heat dissipation copper pillar; compressing a second metal layer onto the dielectric layer; partially etching the second metal layer and the dielectric layer to form a microchannel, wherein the heat dissipation copper pillar and the heat dissipation plate are disposed inside the microchannel, and both the outlet and inlet of the microchannel are disposed on a side of the semi-finished board perpendicular to the direction of the semi-finished board; removing the remaining portion of the second metal layer; and pressing a sealing layer onto the dielectric layer to seal the microchannels in a direction perpendicular to the semi-finished board, thereby obtaining an embedded package heat dissipation structure.

[0008] Furthermore, the method for manufacturing the embedded package heat dissipation structure in the above embodiment of the present invention may have the following additional technical features.

[0009] Furthermore, in the embodiment of the present application, the step of forming a heat sink based on the first metal layer specifically includes: applying a photoresist film to cover the first metal layer; exposing the photoresist film to light to form a heat sink pattern; and etching the photoresist film and the heat sink pattern to form a heat sink.

[0010] Furthermore, in the embodiment of the present application, the material of the second metal layer is titanium or aluminum.

[0011] Furthermore, in an embodiment of the present application, the step of partially etching the second metal layer and the dielectric layer to form a microchannel specifically includes the steps of forming a window on the second metal layer by performing a photoresist film application process, an exposure process, and an etching process in this order, where the projection of the window in a direction perpendicular to the semi-finished board is the same as the projection of the microchannel in a direction perpendicular to the semi-finished board, and etching the dielectric layer to expose the heat sink and the heat dissipation copper pillar and form a microchannel.

[0012] Furthermore, in an embodiment of the present application, the step of pressing a sealing layer onto the dielectric layer to seal the microchannel in a direction perpendicular to the semi-finished board and obtaining an embedded package heat dissipation structure specifically includes the steps of adhering an adhesive layer onto the dielectric layer, and pressing a sealing layer onto the adhesive layer to seal the microchannel in a direction perpendicular to the semi-finished board and obtaining an embedded package heat dissipation structure.

[0013] In another aspect, embodiments of the present application also include: An embedded package heat dissipation structure obtained by the method for manufacturing an embedded package heat dissipation structure according to any one of the above embodiments is provided, and the embedded package heat dissipation structure comprises: The device includes an embedded device, a heat sink, a heat sink copper pillar, a microchannel, and a sealing layer, wherein the heat sink and the heat sink copper pillar are disposed inside the microchannel, the non-pin surface of the embedded device is in close contact with the heat sink, the heat sink copper pillar is connected to the heat sink, and the sealing layer seals the microchannel in a direction perpendicular to the heat sink structure.

[0014] Furthermore, in embodiments of the present application, the implanted device may be one or more.

[0015] Furthermore, in the embodiment of the present application, the number of the heat dissipation copper pillars is one or more.

[0016] Furthermore, the embodiment of the present application further includes a wiring layer electrically connected to the pins of the embedded device.

[0017] In another aspect, the present application also provides a semiconductor device including the embedded package heat dissipation structure according to any one of the above embodiments. [Effects of the Invention]

[0018] The advantages and beneficial effects of the present application will be set forth in part in the description that follows, and in part will be obvious from the description, or may be learned through the practice of the present application.

[0019] According to the present application, the heat sink and heat dissipation copper pillars, which are in close contact with the microchannel and the embedded device, are arranged perpendicular to the semi-finished board of the embedded device, thereby improving the heat dissipation effect of the embedded device, and thus the embedded package heat dissipation structure meets the heat dissipation requirements of high-frequency and high-speed products. [Brief explanation of the drawings]

[0020] [Figure 1] 2A-2C are schematic diagrams illustrating steps of a method for fabricating an embedded package heat dissipation structure in accordance with certain embodiments of the present invention. [Figure 2] 1 is a structural schematic diagram of an embedded package heat dissipation structure according to a specific embodiment of the present invention; [Figure 3] 1A and 1B are schematic diagrams illustrating structural changes due to a method for fabricating an embedded package heat dissipation structure in a specific embodiment of the present invention. [Figure 4] 10A and 10B are schematic diagrams illustrating structural changes according to a method for fabricating another embedded package heat dissipation structure in a specific embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0021] Hereinafter, a method for manufacturing an embedded package heat dissipation structure, an embedded package heat dissipation structure, and principles and processes of semiconductors according to embodiments of the present invention will be described in detail with reference to the drawings.

[0022] Referring to FIG. 1, the method for fabricating an embedded package heat dissipation structure of the present invention includes steps S1 to S8.

[0023] S1: Form a semi-finished board including an embedded device and a first metal layer, the first metal layer being provided in close contact with a non-pin surface of the embedded device.

[0024] In this step, the semi-finished board may include an embedded device and a first metal layer, in which the non-pin side of the embedded device may be in close contact with the first metal layer. The first metal layer in close contact with the embedded device contributes to the thermal conduction of the embedded device and may be made of titanium metal or other metals with high thermal conductivity and thermal stability. The embedded device may be an active device or a passive device. The semi-finished board may further include a wiring layer. The wiring layer may be electrically connected to the embedded device, thereby realizing the function of the embedded device. A dielectric layer may also be provided between the first metal layer and the wiring layer. The dielectric layer can fix the embedded device and the first metal layer and electrically isolate the first metal layer from the wiring layer.

[0025] S2: A heat sink is formed based on the first metal layer.

[0026] In this step, the first metal layer may be etched into a heat sink using a conventional process, such as exposure, development, and etching. Because an etching process is used to form the heat sink, the heat sink obtained by partially etching the metal layer must adhere to the non-pin surface of the embedded device to enhance the heat dissipation effect of the embedded device. If the thickness of the first metal layer is not sufficient to meet the requirements of the etching process, the metal layer may be thickened using a conventional process, such as electroplating. Alternatively, if the thickness of the formed heat sink is too small to provide sufficient heat dissipation performance, the heat sink may be thickened using an electroplating process to meet specific heat dissipation requirements. Furthermore, in some embodiments, if a wiring layer needs to be fabricated on the first metal layer, the wiring layer may be fabricated based on the first metal layer while the heat sink is fabricated using a conventional process.

[0027] S3: Heat-dissipating copper pillars are fabricated on the heat-dissipating plate.

[0028] In this step, a heat dissipating copper pillar may be fabricated on the heat sink. The heat dissipating copper pillar may be fabricated by conventional processes such as pasting a photoresist film, exposing a pattern, and etching the pattern. The heat dissipating copper pillar may be connected to the heat sink. The material of the heat dissipating copper pillar may be the same as the material of the heat sink, or the heat sink may use a material with higher thermal conductivity.

[0029] S4: A dielectric layer is provided to cover the heat dissipation copper pillar.

[0030] In this step, a dielectric layer may be provided. The dielectric layer may cover the heat dissipating copper pillar, or a resin film may be used. The resin film may be a thermosetting resin or a thermoplastic resin that is pressed onto the heat dissipating copper pillar, or any one of these materials may be used. The dielectric layer must completely cover the heat dissipating copper pillar and provide support for subsequent processes.

[0031] S5: A second metal layer is pressed onto the dielectric layer.

[0032] In this step, the second metal layer may include a metal material other than copper, and serves as a protective layer to protect the dielectric layer and prevent excessive processing of the dielectric layer in later processes from affecting subsequent processing.

[0033] S6: The second metal layer and the dielectric layer are partially etched to form microchannels.

[0034] In this step, the second metal layer may be partially etched by a conventional process such as exposure, development, and etching, and the dielectric layer may be partially etched by a plasma method to form a microchannel. Here, the heat dissipation copper pillar and heat dissipation plate obtained by the above steps may be disposed inside the microchannel. Both the outlet and inlet of the microchannel are disposed on the side of the semi-finished board perpendicular to the direction of the semi-finished board.

[0035] S7: The remaining portion of the second metal layer is removed.

[0036] In this step, the remaining portions of the second metal layer may be removed by chemical etching or etching, the latter requiring the use of a reagent that does not react with the heat sink and the heat-sinking copper pillars.

[0037] S8: A sealing layer is pressed onto the dielectric layer to seal the microchannel in the direction perpendicular to the semi-finished board, thereby obtaining an embedded package heat dissipation structure.

[0038] In this step, a sealing layer may be pressed onto the dielectric layer by physical pressing, sealing the microchannels in the direction perpendicular to the semi-finished board, and finally obtaining a heat dissipation structure. The sealing layer may serve as a substrate for subsequent processing, while the heat generated by the embedded device can be conducted to the outside through the outlets and inlets of the microchannels.

[0039] Furthermore, in some embodiments of the present application, the step of forming a heat sink based on the first metal layer may specifically include the following steps S21 to S23.

[0040] S21: A photoresist film is attached so as to cover the first metal layer.

[0041] S22: The photoresist film is exposed to light to form a heat sink pattern.

[0042] S23: The photoresist film and the heat sink pattern are etched to form a heat sink.

[0043] In this embodiment, the heat sink may be formed by covering the first metal layer with a photoresist film, then exposing the photoresist film to light, forming a pattern for the heat sink, etching the photoresist film, and partially etching the first metal layer. The heat sink must be fully or partially in contact with the embedded device.

[0044] Furthermore, in some embodiments of the present application, the step of partially etching the second metal layer and the dielectric layer to form a microchannel may specifically include the following steps S31 and S32.

[0045] S31: By carrying out a photoresist film pasting process, an exposure process, and an etching process in this order, a window is formed on the second metal layer, and the projection of the window in a direction perpendicular to the semi-finished board is the same as the projection of the microchannel in a direction perpendicular to the semi-finished board.

[0046] S32: Etch the dielectric layer to expose the heat sink and the heat dissipation copper pillars and form microchannels.

[0047] In this embodiment, first, the second metal is partially etched to form a window using a conventional photoresist film application process, exposure process, and etching process, and then the dielectric layer is etched through the window using a plasma process to expose the heat sink and heat dissipation copper pillars and form a microchannel.

[0048] Furthermore, in some embodiments of the present application, the step of pressing a sealing layer onto the dielectric layer, sealing the microchannels in a direction perpendicular to the semi-finished board, and obtaining an embedded package heat dissipation structure specifically includes the following steps S41 and S42:

[0049] S41: An adhesive layer is adhered onto the dielectric layer.

[0050] S42: A sealing layer is pressed onto the adhesive layer to seal the microchannel in a direction perpendicular to the semi-finished board, thereby obtaining an embedded package heat dissipation structure.

[0051] In this step, before the sealing layer is pressed, an adhesive layer is adhered onto the dielectric layer, and the adhesive layer and the sealing layer achieve sealing in the direction perpendicular to the semi-finished board of the microchannel, i.e., the direction perpendicular to the heat dissipation structure, thereby meeting the requirements for heat dissipation as well as the requirements for subsequent processing.

[0052] 2, corresponding to the method of FIG. 1, an embodiment of the present application further provides an embedded package heat dissipation structure. This embedded package heat dissipation structure can be obtained by the method for fabricating an embedded package heat dissipation structure described in any of the above embodiments, and may include an embedded device 101, a heat dissipation plate 102, heat dissipation copper pillars 103, a microchannel 104, and a sealing layer 105. The heat dissipation plate 102 and the heat dissipation copper pillars 103 are provided inside the microchannel 104. The non-pin surface of the embedded device 101 is in close contact with the heat dissipation plate 102, the heat dissipation copper pillars 103 are connected to the heat dissipation plate 102, and the sealing layer 105 seals the microchannel 104 in a direction perpendicular to the heat dissipation structure.

[0053] Furthermore, in some embodiments of the present application, the embedded device is one or more, and the number of embedded devices varies for each embedded package heat dissipation structure, but the specific number may be adjusted according to actual needs.

[0054] Furthermore, in some embodiments of the present application, the heat dissipation copper pillar is one or more, and the more heat dissipation copper pillars there are, the higher the heat dissipation efficiency. However, taking into account the difficulty and cost of fabrication, the specific number may be adjusted according to actual needs.

[0055] Furthermore, in some embodiments of the present application, the embedded package heat dissipation structure may further include a wiring layer electrically connected to the pins of the embedded device, which can provide a foundation for subsequent processing of the embedded package heat dissipation structure and improve the practicality of the structure.

[0056] The contents of the above method embodiments all apply to the embodiment of this embedded package heat dissipation structure, and the functions specifically realized by the embodiment of this embedded package heat dissipation structure are the same as those of the above method embodiments, and the beneficial effects achieved are also the same as those achieved by the above method embodiments.

[0057] Corresponding to the embedded package heat dissipation structure of FIG. 2, an embodiment of the present application also provides a semiconductor that may include the embedded package heat dissipation structure described in any of the above embodiments.

[0058] Hereinafter, a method for fabricating the embedded package heat dissipation structure of the present application will be described with reference to specific embodiments.

[0059] Embodiment 1 In this embodiment, there are four embedded devices, fifteen conductive copper pillars, the first metal layer is a copper material, and the second metal layer is a titanium material.

[0060] 3a to 3f, first, a semi-finished board 201 is fabricated by a conventional technique. The semi-finished board 201 includes four embedded devices 202, a copper layer 203, and a wiring layer 204 connected to the embedded devices 202, and the copper layer 203 is provided in close contact with the non-pin surfaces of the embedded devices 202.

[0061] Next, a heat sink 205 is formed by a general manufacturing process based on the copper layer 203. The heat sink 205 is in close contact with the non-pin surface of the embedded device 202.

[0062] Thereafter, 15 heat dissipating copper pillars 206 are formed on the heat dissipating plate 205 by a general process of applying a photoresist film and a general process of exposure, development, and etching.

[0063] Thereafter, a dielectric layer 207 is applied over the heat sink 205 and the heat sink copper pillars 206, and then a titanium layer 208 is provided by pressure bonding.

[0064] Then, the titanium layer 208 and the dielectric layer 207 are partially removed by etching to form the microchannel 209. Fifteen heat-dissipating copper pillars 206 and a heat-dissipating plate 205 are provided inside the microchannel 209, and both the outlet and the inlet of the microchannel 209 are provided on the side of the semi-finished board 201 perpendicular to the direction of the semi-finished board 201.

[0065] The remaining portion of titanium layer 208 is then removed by conventional techniques.

[0066] Finally, a sealing layer 210 is pressed onto the dielectric layer 207. Before pressing the sealing layer, an adhesive layer 211 may be attached. Finally, the microchannel 209 is sealed in a direction perpendicular to the semi-finished board 201, and a solder resist layer (adhesive layer) 211 is formed on the wiring layer 204, thereby obtaining a finished embedded package heat dissipation structure.

[0067] Embodiment 2 In this embodiment, there are four embedded devices, fifteen conductive copper pillars, the first metal layer is a copper material, and the second metal layer is a titanium material.

[0068] 4a to 4g, first, a semi-finished board 301 is fabricated by a conventional technique. The semi-finished board 301 includes four embedded devices 302, a copper layer 303, and a first wiring layer 304 connected to the embedded devices 302, and the copper layer 303 is provided in close contact with the non-pin surfaces of the embedded devices 302.

[0069] Next, based on the copper layer 303, a heat sink 305 and a second wiring layer 312 are formed using a typical manufacturing process, and the second wiring layer 312 is connected to the first wiring layer 304 and the embedded device 302, and the heat sink 305 is in close contact with the non-pin surface of the embedded device 302.

[0070] Next, 15 heat dissipating copper pillars 306 are fabricated on the heat dissipating plate 305 by a general process of applying a photoresist film and a general process of exposure, development, and etching.

[0071] Thereafter, a dielectric layer 307 is applied over the heat sink 305 and the heat sink copper pillars 306, and then a titanium layer 308 is provided by pressure bonding.

[0072] Then, the titanium layer 308 and the dielectric layer 307 are partially removed by etching to form the microchannel 309. Fifteen heat-dissipating copper pillars 306 and a heat-dissipating plate 305 are provided inside the microchannel 309, and both the outlet and the inlet of the microchannel 309 are provided on the side of the semi-finished board 301 perpendicular to the direction of the semi-finished board 301.

[0073] The remaining portion of titanium layer 308 is then removed by conventional techniques.

[0074] Finally, a sealing layer 310 is pressed onto the dielectric layer 307. An adhesive layer 311 may be attached before pressing the sealing layer 310. Finally, the microchannel 309 is sealed in a direction perpendicular to the semi-finished board 301, a solder resist layer (adhesive layer) 311 is formed on the wiring layer 304, and a third wiring layer 313 and a package layer 314, which will later be connected to the embedded device 302, are fabricated on the sealing layer 310, thereby obtaining a finished embedded package heat dissipation structure.

[0075] The contents of the above method embodiments all apply to the present device embodiment, and the functions specifically realized by the present device embodiment are the same as those of the above method embodiments, and the beneficial effects achieved are also the same as those achieved by the above method embodiments.

[0076] In some alternative embodiments, the functions / acts described in the block diagrams may not be in the order described in the operational diagrams. For example, two blocks shown in succession may be executed substantially simultaneously, or may be executed in the reverse order, depending on the functions / acts involved. Furthermore, the embodiments shown and described in the flowcharts herein are provided for illustrative purposes to provide a more comprehensive understanding of the technology. The disclosed methods are not limited to the operations and logic flows presented herein. Alternative embodiments are contemplated in which the order of various operations is changed and sub-operations described as part of a larger operation are performed independently.

[0077] In the preceding description of this specification, references to terms such as "one embodiment / example," "another embodiment / example," or "some embodiments / examples" mean that a particular feature, structure, material, or characteristic described with reference to an embodiment or example is included in at least one embodiment or example of the present application. General references to such terms in this specification do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

[0078] Although embodiments of the present application have been shown and described, those skilled in the art will understand that these embodiments are capable of various changes, modifications, substitutions, and variations without departing from the principles and purpose of the present application, and that the scope of the present application is limited by the claims and their equivalents.

[0079] Although the above describes preferred embodiments of the present application, the present application is not limited to the above embodiments, and those skilled in the art may make various equivalent modifications or substitutions without violating the spirit of the present application, and these equivalent modifications or substitutions are intended to be included within the scope defined by the claims of the present application.

Claims

1. forming a semi-finished board including an embedded device and a first metal layer, the first metal layer disposed in intimate contact with a non-pin surface of the embedded device; forming a heat sink based on the first metal layer, the heat sink being in close contact with a non-pin surface of the embedded device; fabricating a plurality of heat-dissipating copper pillars spaced apart on the heat-dissipating plate; providing a dielectric layer covering the heat dissipation copper pillar; compressing a second metal layer onto the dielectric layer; partially etching the second metal layer and the dielectric layer to form a microchannel, wherein the plurality of spaced apart heat dissipation copper pillars and the heat dissipation plate are disposed inside the microchannel, and both the outlet and inlet of the microchannel are disposed on a side of the semi-finished board perpendicular to the direction of the semi-finished board; removing the remaining portion of the second metal layer; a sealing layer as a substrate is pressed onto the adhesive layer so as not to contact the heat dissipation copper pillars, the microchannel is sealed in a direction perpendicular to the semi-finished board, and a third wiring layer and a package layer connected to the embedded device are fabricated on the sealing layer, thereby obtaining an embedded package heat dissipation structure.

2. The step of forming a heat sink based on the first metal layer includes: applying a photoresist film to cover the first metal layer; exposing the photoresist film to light to form a heat sink pattern; 2. The method for fabricating an embedded package heat dissipation structure according to claim 1, further comprising: etching the photoresist film and the heat dissipation plate pattern to form a heat dissipation plate.

3. 2. The method for fabricating an embedded package heat dissipation structure according to claim 1, wherein the material of the second metal layer is titanium or aluminum.

4. The step of partially etching the second metal layer and the dielectric layer to form a microchannel comprises: forming a window on the second metal layer by carrying out a photoresist film pasting process, an exposure process, and an etching process in this order, wherein the projection of the window in a direction perpendicular to the semi-finished board is the same as the projection of the microchannel in a direction perpendicular to the semi-finished board; 2. The method for fabricating an embedded package heat dissipation structure according to claim 1, further comprising: etching the dielectric layer to expose the heat dissipation plate and the heat dissipation copper pillars and form microchannels.

5. An embedded package heat dissipation structure, an embedded package heat dissipation structure comprising: an embedded device; a heat sink; a plurality of heat dissipation copper pillars arranged at intervals; a microchannel; and a sealing layer as a substrate, wherein the heat sink and the plurality of heat dissipation copper pillars arranged at intervals are arranged inside the microchannel; a non-pin surface of the embedded device is in close contact with the heat sink; the heat dissipation copper pillars are connected to the heat sink; the sealing layer seals the microchannel in a direction perpendicular to the heat dissipation structure so as not to come into contact with the heat dissipation copper pillars; and a third wiring layer and a package layer connected to the embedded device are formed on the sealing layer.

6. The embedded package heat dissipation structure according to claim 5 , wherein the embedded device is one or more.

7. The embedded package heat dissipation structure according to claim 5 , further comprising a wiring layer electrically connected to pins of the embedded device.

8. A semiconductor device comprising the embedded package heat dissipation structure according to any one of claims 5 to 7.

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