Dynamic temperature control of a substrate support in a substrate processing system

Abstract

To provide a substrate processing system comprising dynamic temperature control of a substrate support.SOLUTION: A temperature-controlled substrate support for a substrate processing system 120 includes a substrate support 126 located in a processing chamber 122. The substrate support includes N zones and N resistive heaters 164, respectively, where N is an integer greater than one. A thermocouple 165, which is a temperature sensor, is located in one of the N zones. A dynamic temperature controller 163 calculates N resistances of the N resistive heaters during operation and adjusts power to N-1 of the N resistive heaters during operation of the substrate processing system in response to a temperature measured in the one of the N zones by the temperature sensor, the N resistances of the N resistive heaters, and N-1 resistance ratios.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] [CROSS-REFERENCE TO RELATED APPLICATIONS] This application claims the benefit of U.S. Provisional Application No. 62 / 694,171, filed July 5, 2018, the entire disclosure of which is incorporated herein by reference.

[0002] FIELD OF THE DISCLOSURE The present disclosure relates to substrate processing systems, and more particularly to substrate processing systems with dynamic temperature control of a substrate support. [Background technology]

[0003] The discussion of the background art provided herein is intended to present the contents of the present disclosure generally, and the inventions of the presently named inventors are not admitted expressly or impliedly as prior art to the present disclosure to the extent that they are described in this background art section and in a manner that is not prior art at the time of filing.

[0004] Substrate processing systems may be used to perform etching, deposition, and / or other processing of substrates, such as semiconductor wafers. Exemplary processes that may be performed on a substrate include, but are not limited to, chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD), atomic layer etching (ALE), plasma-enhanced atomic layer deposition (PEALD), and / or other etching, deposition, and cleaning processes. During processing, the substrate is placed on a substrate support, such as a pedestal or electrostatic chuck (ESC), in a processing chamber of the substrate processing system. To process the substrate, a process gas mixture is introduced into the processing chamber. In some examples, a plasma may be generated to enhance chemical reactions in the processing chamber.

[0005] During substrate processing, the temperature of the substrate may be controlled by resistive heating elements disposed on the substrate support. In some examples, the resistive heating elements are disposed in two or more separately controlled zones. Maintaining thermal uniformity in the zones heated by the resistive heating elements typically requires direct temperature measurement in each zone or individually calibrated indirect temperature measurement (e.g., known dependence of heating element resistance with temperature). Summary of the Invention

[0006] A temperature-controlled substrate support for a substrate processing system includes a substrate support mounted in a processing chamber. The substrate support includes N zones and N resistive heating elements, where N is an integer greater than 1. A temperature sensor is mounted in one of the N zones. A controller is configured to calculate N resistances of the N resistive heating elements during operation, and is configured to adjust power to N-1 of the N resistive heating elements during operation of the substrate processing system in response to the temperature in one of the N zones measured by the temperature sensor, the N resistances of the N resistive heating elements, and N-1 resistance ratios.

[0007] In other features, the N-1 resistance ratios are determined by measuring N resistances of N resistive heating elements in N zones, respectively, when the substrate support is at a uniform temperature, and dividing N-1 of the N resistances of the N-1 zones by one of the N resistances corresponding to one of the N zones.

[0008] In other features, the uniform temperature corresponds to ambient temperature. The N-1 zones do not include temperature sensors. The controller calculates the N resistances of the N operating resistive heating elements by monitoring N voltages supplied to the N resistive heating elements and calculating N resistances based on the N voltages supplied to the N resistive heating elements.

[0009] In other features, the controller calculates the N resistances of the N operating resistive heating elements by monitoring N currents supplied to the N resistive heating elements, respectively, and calculating the N resistances based on the N currents supplied to the N resistive heating elements.

[0010] In other features, the controller calculates the N resistances of the N resistive heating elements during operation by monitoring the N currents and N voltages supplied to the N resistive heating elements, respectively, and calculating the N resistances based on the N currents and N voltages supplied to the N resistive heating elements, respectively.

[0011] In other features, the controller is configured to control power to one of the N zones based on a temperature measured by the temperature sensor.

[0012] A method of manufacturing a substrate support for a substrate processing system includes embedding N resistive heating elements in N zones of the substrate support, embedding a temperature sensor in one of the N zones of the substrate support, measuring N resistances of the N resistive heating elements in the N zones of the substrate support, determining N-1 resistance ratios based on the N resistances, connecting a controller to the N resistive heating elements and the temperature sensor, and programming the controller to control N-1 temperatures of the N resistive heating elements in N-1 of the N zones, respectively, during operation of the substrate processing system in response to the measured temperature in one of the N zones, the N resistances of the N resistive heating elements, and the N-1 resistance ratios.

[0013] In other features, the N-1 resistance ratios are calculated by determining the N resistances of the N resistive heating elements, respectively, when the substrate support is at a uniform temperature and dividing N-1 of the N resistances of the N-1 zones by one of the N resistances corresponding to one of the N zones.

[0014] In other features, the uniform temperature corresponds to ambient temperature. N-1 of the N zones are not equipped with temperature sensors. Measuring the N resistances of the N resistive heating elements includes monitoring N voltages supplied to the N resistive heating elements, respectively, and calculating the N resistances based on the N voltages supplied to the N resistive heating elements, respectively.

[0015] In other features, measuring the N resistances of the N zones includes monitoring N currents supplied to the N resistive heating elements, respectively, and calculating the N resistances based on the N currents supplied to the N resistive heating elements, respectively.

[0016] In other features, measuring the N resistances of the N zones during operation includes monitoring N currents and N voltages supplied to the N resistive heating elements, respectively, and calculating the N resistances based on the N currents and N voltages supplied to the N resistive heating elements, respectively.

[0017] A method for controlling the temperature of zones in a substrate support of a substrate processing system includes measuring the temperature of one of N zones of the substrate support during operation of the substrate processing system using a temperature sensor installed in one of the N zones (N is an integer greater than 1); measuring N resistances of N resistive heating elements installed in the N zones during operation of the substrate processing system, respectively; and adjusting power to N-1 of the N resistive heating elements in N-1 of the N zones during operation of the substrate processing system, respectively, to control the temperature in N-1 of the N zones in response to the temperature measured in one of the N zones, the N resistances of the N resistive heating elements, and N-1 resistance ratios.

[0018] In other features, the N-1 resistance ratios are calculated by determining the N resistances of the N resistive heating elements, respectively, when the substrate support is at a uniform temperature and dividing N-1 of the N resistances of the N-1 zones by one of the N resistances corresponding to one of the N zones.

[0019] In other features, the uniform temperature corresponds to ambient temperature. N-1 of the N zones are not equipped with temperature sensors. Measuring the N resistances of the N resistive heating elements includes monitoring N voltages supplied to the N resistive heating elements, respectively, and calculating the N resistances based on the N voltages supplied to the N resistive heating elements, respectively.

[0020] In other features, measuring the N resistances of the N zones includes monitoring N currents supplied to the N resistive heating elements, respectively, and calculating the N resistances based on the N currents supplied to the N resistive heating elements, respectively.

[0021] In other features, measuring the N resistances of the N zones during operation includes monitoring N currents and N voltages supplied to the N resistive heating elements, respectively, and calculating the N resistances based on the N currents and N voltages supplied to the N resistive heating elements, respectively.

[0022] In other features, the method includes controlling power to one of the N zones based on a temperature measured by the temperature sensor.

[0023] Further scope of applicability of the present disclosure will become apparent from the detailed description, the claims, and the drawings. The detailed description and specific examples are for illustrative purposes only and are not intended to limit the scope of the present disclosure. [Brief explanation of the drawings]

[0024] The present disclosure will become better understood from the detailed description and the accompanying drawings.

[0025] [Figure 1] 1 is a functional block diagram of an exemplary substrate processing system including a dynamic temperature controller for zoned temperature controlled components, such as a substrate support, in accordance with the present disclosure.

[0026] [Figure 2] FIG. 1 is a functional block diagram of an exemplary dynamic temperature control system for a component with a resistive heating element zone according to the present disclosure.

[0027] [Figure 3A] 1 illustrates an exemplary base with multiple heating element zones according to the present disclosure. [Figure 3B] 1 illustrates an exemplary base with multiple heating element zones according to the present disclosure. [Figure 3C] 1 illustrates an exemplary base with multiple heating element zones according to the present disclosure.

[0028] [Figure 4A] 10 is a graph depicting resistance and resistance ratio as a function of temperature for a two-zone heating element according to the present disclosure. [Figure 4B] 10 is a graph depicting resistance and resistance ratio as a function of temperature for a two-zone heating element according to the present disclosure.

[0029] [Figure 5] 1 is a flow chart illustrating an exemplary method for implementing dynamic temperature control according to the present disclosure.

[0030] [Figure 6] FIG. 1 is a diagram illustrating the control of pedestal temperature as a function of time for a prior art temperature controller.

[0031] [Figure 7] FIG. 10 is a diagram illustrating the control of pedestal temperature as a function of time for a dynamic temperature controller according to the present disclosure.

[0032] In the drawings, reference numbers may be repeated to identify similar and / or identical elements. DETAILED DESCRIPTION OF THE INVENTION

[0033] Although this disclosure includes specific examples relating to multi-zone temperature control in a substrate support of a substrate processing system, the systems and methods described herein may also be applied to temperature control in other types of components that include zoned resistive heating elements.

[0034] In some applications, temperature uniformity is desired across the substrate during substrate processing. In these applications, power may be supplied to each resistive heating element independently. However, multi-zone heating element systems often have only one thermocouple installed in one of the zones to measure the temperature of the substrate support. Power is supplied to the remaining zones at a predetermined ratio (or power ratio) (or predetermined duty cycle ratio) of the power supplied to the zone with the thermocouple to maintain a uniform temperature in all zones. The power ratio or duty cycle ratio is usually determined for specific process conditions and generally does not vary. The actual temperature in the remaining zones is unknown but is expected to be within the predetermined range of the zone with the thermocouple.

[0035] However, in some applications, significant heat load fluctuations may occur during certain process conditions, causing one or more zones to change temperature relative to the zones equipped with thermocouples. Temperature fluctuations can result in undesirable process control. If the temperature fluctuations are large enough, defects in the substrate support may occur.

[0036] Some heating systems rely on the dependence of the resistivity of a heating element coil with temperature (or temperature coefficient of resistance (TCR)). These systems generally control the temperature of individual zones independently and usually require a temperature sensor or thermocouple in each zone. Alternatively, individual calibration / characterization of temperature versus resistance for each heating element and their relationship to zone temperature can be determined.

[0037] The present disclosure provides a method to avoid the above requirements while still providing temperature uniformity in the zones. The present disclosure maintains thermal uniformity across all zones without requiring thermocouples in each zone or individual calibration / characterization as described above.

[0038] TCR is a material property related to the microstructure of the material in a resistance heating element. Components made of the same material and manufactured under the same processing conditions are expected to have the same or very similar TCR values. That is, heating coil elements used in a resistance heating element located in different zones of a multi-zone substrate support and processed together are expected to have the same or very similar TCR values. While the resistance of a heating element may vary at a given temperature, the resistance of a heating element will trend similarly with temperature. That is, the resistance of a thermocouple (R ZN ) for the zone with a thermocouple (e.g., R Z1 , R Z2 ,···R ZN-1 ) the resistance ratio (R Z1 / R ZN , R Z2 / R ZN , ···, and R ZN-1 / R ZN ) will remain the same when the resistive heating element is at the same temperature as the resistive heating element with the thermocouple. Thus, if the resistance of a zone is determined at one temperature, such as ambient temperature, the corresponding resistance ratio of the zone can be used at other temperatures (e.g., process temperatures from ambient to 700°C) to determine the desired resistance of another zone without a thermocouple. The desired resistance and the measured resistance are used to control the power and provide a uniform temperature in the other zone.

[0039] Specifically, the dynamic temperature controller according to the present disclosure detects a thermocouple (R ZN ) for the zone with thermocouples (R Z1 , R Z2 ,···R ZN-1 ) the resistance ratio of N-1 of the resistance heating element in the zone without (R Z1 / R ZN , R Z2 / R ZN , ···, and R ZN-1 / R ZN For example, the resistance ratio can be determined at room temperature and applied to other process temperatures. Z1 , R Z2 ,···R ZN-1To determine the desired resistance in the zone without thermocouples, the resistance ratio (R Z1 / R ZN , R Z2 / R ZN , ···, and R ZN-1 / R ZN ) and temperature are used.

[0040] For example, if the resistance ratio of the first zone Z1 is R Z1 / R ZN = 1.102, the resistance measured at a given temperature is 10 Ω at the desired temperature in zone ZN and 10 Ω at zone R Z1 For example, if the resistance ratio of the second zone Z2 is R Z2 / R ZN = 1.08, the resistance measured at a given temperature is 10 Ω at the desired temperature of the zone ZN with the thermocouple, and the desired resistance of the second zone R Z1 = 1.08 × 10Ω = 10.8Ω.

[0041] The disclosed systems and methods control the temperature of multiple zones by maintaining a resistance ratio of resistive heating elements in zones without thermocouples relative to zones with thermocouples. That is, the temperature of zones with thermocouples is controlled to a desired temperature based on temperature feedback from the thermocouples. The resistance of the zones with thermocouples is measured at the desired temperature. The resistance ratio is used to determine the desired resistance in the remaining zones to achieve the desired temperature in the corresponding zone. Heating element power is increased or decreased in the corresponding zones so that the measured resistance of the corresponding zones matches the desired resistance, respectively.

[0042] Using a single temperature measurement in one zone of the substrate support, all remaining zones of the substrate support can be dynamically controlled to a uniform temperature, such that substrate support temperature uniformity is achieved without using thermocouples in the remaining zones or pre-calibrating the resistance versus temperature of each zone.

[0043] 1, an exemplary substrate processing system 120 is shown. A processing chamber for chemical vapor deposition (CVD) or atomic layer deposition (ALD) using a capacitively coupled plasma (CCP) is shown for illustrative purposes, although other types of substrate processing systems may also be used.

[0044] The substrate processing system 120 includes a processing chamber 122 that encloses the other components of the substrate processing system 120 and contains the RF plasma (if used). The substrate processing system 120 includes an upper electrode 124 and a substrate support 126, such as an electrostatic chuck (ESC) or a pedestal. During operation, a substrate 128 is positioned on the substrate support 126.

[0045] By way of example only, the upper electrode 124 may include a gas distribution device 129, such as a showerhead, for introducing and distributing process gases. The gas distribution device 129 may include a stem portion having one end connected to the upper surface of the processing chamber. A base portion is generally cylindrical and extends radially outward from the other end of the stem portion at a location away from the upper surface of the processing chamber. The substrate-facing surface or faceplate of the showerhead base portion includes a plurality of holes through which precursors, reactants, etching gases, inert gases, carrier gases, other process gases, or purge gases may flow. Alternatively, the upper electrode 124 may include a conductive plate, and process gases may be introduced in other ways.

[0046] The substrate support 126 includes a base plate 130 that functions as a lower electrode. The base plate 130 supports a heater plate 132, which may correspond to a ceramic multi-zone heater plate. A thermal resistance layer 134 may be disposed between the heater plate 132 and the base plate 130. The base plate 130 may include one or more channels 136 for flowing a coolant through the base plate 130.

[0047] When a plasma is used, an RF generation system 140 generates and outputs an RF voltage to either the upper electrode 124 or the lower electrode (e.g., the base plate 130 of the substrate support 126). The other of the upper electrode 124 and the base plate 130 may be DC grounded, AC grounded, or floating. By way of example only, the RF generation system 140 may include an RF voltage generator 142 that generates an RF voltage supplied to the upper electrode 124 or the base plate 130 by a matched distribution network 144. In other examples, the plasma may be generated inductively or remotely.

[0048] Gas supply system 150 includes one or more gas sources, gas source 152-1, gas source 152-2, ..., and gas source 152-N (collectively, gas source 152), where N is an integer greater than zero. Gas source 152 is connected to manifold 160 by valves 154-1, valves 154-2, ..., and valves 154-N (collectively, valves 154), and MFCs 156-1, MFC 156-2, ..., and MFC 156-N (collectively, MFC 156). Although one gas supply system 150 is shown, more than one gas supply system may be used.

[0049] The dynamic temperature controller 163 is connected to a plurality of resistive heating elements 164 disposed on the heating plate 132. The dynamic temperature controller 163 is also connected to a thermocouple 165 disposed in one of a plurality of heating zones on the heating plate 132. The remaining heating zones do not include a thermocouple. The dynamic temperature controller 163 may be used to control the plurality of resistive heating elements 164 to adjust and control the temperature of the substrate support 126 and the substrate 128.

[0050] In some examples, the dynamic temperature controller 163 and / or another controller may also be in communication with the coolant assembly 166 to control the flow of coolant through the flow passage 136. For example, the coolant assembly 166 may include a coolant pump, a reservoir, and / or one or more thermocouples. In some examples, the dynamic temperature controller 163 operates the coolant assembly 166 to selectively flow coolant through the flow passage 136 to cool the substrate support 126.

[0051] A valve 170 and a pump 172 may be used to evacuate reactants from the processing chamber 122. A system controller 180 may be used to control the components of the substrate processing system 120.

[0052] 2, a dynamic temperature control system 200 according to the present disclosure is shown. The dynamic temperature control system 200 includes a power supply 220 having a driver circuit 224-1, a driver circuit 224-2, ..., and a driver circuit 224-N (collectively, driver circuits 224), where N is an integer greater than 1. The driver circuits 224 control power to the resistive heating elements, as described further below.

[0053] The current output by drive circuit 224-1, drive circuit 224-2, ..., and drive circuit 224-N to each zone is monitored by current sensor 228-1, current sensor 228-2, ..., and current sensor 228-N (collectively, current sensor 228). The voltage output by drive circuit 224-1, drive circuit 224-2, ..., and drive circuit 224-N to each zone is monitored by voltage sensor 230-1, voltage sensor 230-2, ..., and voltage sensor 230-N (collectively, voltage sensor 230).

[0054] Component 231 includes heating zone 232-1, heating zone 232-2, ..., and heating zone 232-N (collectively, zone 232). In the following description, component 231 includes a substrate support, but any heating component including multiple zones with resistive heating elements may be used. Zones 232-1, 232-2, ..., and 232-N each include a resistive heating element 236-1, 232-2, ..., and 232-N (collectively, resistive heating element 236) embedded therein. In some examples, resistive heating element 236 includes a heating element or heating coil having a corresponding resistance. One of zones 232-1, 232-2, ..., and 232-N includes a thermocouple 240 for detecting its temperature. The remaining zones, zone 232-1, zone 232-2, ..., and zone 232-N, do not include thermocouples.

[0055] Controller 250 is in communication with current sensor 228 and / or voltage sensor 230, thermocouple 240, and drive circuit 224. Controller 250 includes a heating element control module 254. Heating element control module 254 determines the resistance of each of resistive heating elements 236 based on the respective current and / or voltage measurements from current sensor 228 and / or voltage sensor 230. In some examples, current sensor 228 may be omitted when the current is held sufficiently constant by power supply 220 and the voltage is varied to control the RF power. In other examples, voltage sensor 230 may be omitted when the voltage is held sufficiently constant by power supply 220 and the current is varied to control the RF power.

[0056] The heating element control module 254 monitors the temperature of one of the zones 232 (e.g., zone 232-1) that has a thermocouple 240 and controls the power to that zone based on temperature feedback from the thermocouple 240. The heating element control module 254 measures the resistance of the zones and uses the resistance ratio to determine the desired resistance for the remaining zones 232. The heating element control module 254 controls the drive circuits 224 of the remaining zones 232 to increase or decrease the power to achieve the desired resistance, thereby resulting in a uniform temperature in all remaining zones 232.

[0057] 3A-3C, various examples of zones on a substrate support are shown. While specific examples are shown, other zone layouts may be used. In FIG. 3A, a substrate support 310 includes concentric zones, including Zone 1, Zone 2, and Zone 3. Each zone includes a resistive heating element. In FIG. 3B, a substrate support 350 includes a resistive heating element coil defining an inner zone 360 ​​and an outer zone 362. In FIG. 3C, inner zone 1 is surrounded by surrounding outer zones 2, 3, 4, and 5. Each zone includes a resistive heating element. As can be appreciated, other zone layouts may be used.

[0058] Referring now to FIGS. 4A and 4B, graphs showing resistance as a function of temperature for two zone heating elements are shown. In FIG. 4A, the resistance of the inner heating element and the outer heating element during pedestal heating are recorded using a dynamic temperature controller driven to uniform the inner and outer pedestal temperatures based on the TCR-mounted wafer on the pedestal. In FIG. 4B, the inner and outer resistances are both adjusted to a resistance of 1 at 0° C. As can be seen, the slopes are nearly consistent. The inner / outer resistance ratio shows less than 0.05% variation over the temperature range. These tests show that the inner and outer TCR values ​​are very close to each other, supporting the idea that the resistance ratio can be used to uniformly heat the pedestal without calibration.

[0059] 5, a method 400 for controlling the temperature of each of the zones of a component is shown. The method 400 is used to control the temperature of multiple zones of a component to a uniform temperature using thermocouples associated with only one zone. The method 400 includes, at 410, determining the resistance of a resistive heating element in each zone of the component at a single temperature. In some examples, the single temperature is ambient temperature, although other temperatures may also be used.

[0060] At 414, the method determines a resistance ratio between the remaining zone (without a thermocouple) and the zone with the thermocouple. At 418, the temperature of the zone with the thermocouple is sensed during operation, power is controlled based on the measured temperature, and the resistance of the zone with the thermocouple is measured. At 422, the resistance of the resistive heating elements in the remaining zone is measured during operation. At 426, the desired resistance of the remaining zone is calculated using the corresponding resistance ratio. At 430, the power output to the remaining zone is controlled based on the difference between the measured resistance and the desired resistance.

[0061] 5-6, temperature as a function of time is shown for a conventional temperature control system and a dynamic temperature control system according to the present disclosure, respectively. In FIG. 5, temperature as a function of time is shown for the substrate support 350 of FIG. 3B using a conventional temperature control system. As can be seen, the temperature difference between the inner and outer zones is greater than 20° C., which tends to result in process non-uniformity, defects, and / or damage to the substrate support. In FIG. 6, tighter temperature control is achieved using the temperature control system described herein, reducing process non-uniformity and defects and eliminating damage to the substrate support.

[0062] A method for manufacturing a substrate support for a substrate processing system includes embedding N resistive heating elements in N zones of the substrate support. A temperature sensor is embedded in one of the N zones of the substrate support. N resistances of the N resistive heating elements in the N zones of the substrate support are measured. N-1 resistance ratios are determined based on the N resistances. A controller is connected to the N resistive heating elements and the temperature sensor. The controller is programmed to control N-1 temperatures of the N resistive heating elements in N-1 of the N zones, respectively, during operation of the substrate processing system in response to the measured temperature in one of the N zones, the N resistances of the N resistive heating elements, and the N-1 resistance ratios.

[0063] The foregoing description is merely exemplary in nature and is not intended to limit the disclosure, its application, or uses. The broad teachings of the present disclosure may be embodied in various forms. Thus, while the present disclosure includes specific examples, other variations will become apparent upon consideration of the drawings, the specification, and the following claims, and the true scope of the present disclosure should not be so limited. It should be understood that one or more steps within a method may be performed in a different order (or simultaneously) without altering the principles of the present disclosure. Furthermore, although each embodiment is described above as having particular features, one or more of those features described with respect to an embodiment of the present disclosure may also be implemented in other embodiments and / or in combination with features of other embodiments (even if the combination is not expressly stated). In other words, the described embodiments are not mutually exclusive, and permutations of one or more embodiments with one another remain within the scope of the present disclosure.

[0064] Spatial and functional relationships between elements (e.g., between modules, circuit elements, semiconductor layers, etc.) are described using various terms, including "connected," "engaged," "coupled," "adjacent," "near," "on," "above," "below," and "disposed." When a relationship between a first element and a second element is described in the above disclosure, unless expressly specified as "direct," the relationship may be a direct relationship between the first element and the second element, with no intervening elements present, or an indirect relationship where one or more intervening elements (spatial or functional) exist between the first element and the second element. As used herein, the phrase "at least one of A, B, and C" should be interpreted as meaning a non-exclusive logical OR (A OR B OR C), and not as meaning "at least one of A, at least one of B, and at least one of C."

[0065] In some embodiments, the controller is part of a system, which may be part of the examples above. Such systems may include semiconductor processing equipment, including processing tools, chambers, processing platforms, and / or specific processing components (such as wafer pedestals and gas flow systems). These systems may be integrated with electronics for controlling their operation before, during, and after semiconductor wafer or substrate processing. This electronics may refer to a "controller" that may control various components or subcomponents of the system. Depending on the processing conditions and / or the type of system, the controller may be programmed to control the processes disclosed herein, such as supply of process gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid supply settings, positional operation settings, wafer transfer to and from the tool and other transport tools, and / or wafer transfer to and from load locks connected or coupled to the specific system.

[0066] Generally, a controller may be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receives instructions, issues instructions, controls operations, enables cleaning operations, enables endpoint measurements, etc. Integrated circuits may include chips in firmware format that store program instructions, digital signal processors (DSPs), chips defined as application-specific integrated circuits (ASICs), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). Program instructions may be instructions communicated to the controller in the form of various personalizations (or program files) that define operational parameters for performing a particular process on or for a semiconductor wafer or system. In some embodiments, the operational parameters may be part of a recipe defined by a process engineer to accomplish one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or wafer dies.

[0067] In some embodiments, the controller may be part of or coupled to a computer integrated with, coupled to, or otherwise networked to the system. For example, the controller may be in the “cloud” that enables remote access of wafer processing, or may be all or part of a fab host computer system. The computer may enable remote access to the system to monitor the progress of manufacturing operations, examine the history of past manufacturing operations, examine trends or performance benchmarks from multiple manufacturing operations, modify parameters of a current process, set processing steps following a current process, or initiate a new process. In some examples, a remote computer (e.g., a server) can provide process recipes to the system over a network, which may include a local network or the Internet. The remote computer may include a user interface that enables entry or programming of parameters and / or settings that are then communicated from the remote computer to the system. In some examples, the controller receives instructions in the form of data specifying parameters for each processing step to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process being performed and the type of tool the controller is configured to connect to or control. Thus, as described above, the controller may be distributed, for example, by including one or more individual controllers networked together and cooperating for a common purpose, such as the processes and controls described herein. An example of a controller distributed for such a purpose would be one or more integrated circuits in the chamber that are located remotely (e.g., at the platform level or as part of a remote computer) and that communicate with one or more integrated circuits that cooperate to control the process in the chamber.

[0068] Without being limited thereto, example systems may include plasma etch chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, clean chambers or modules, bevel edge etch chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etch (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and other semiconductor processing systems related to or usable in the fabrication and / or manufacturing of semiconductor wafers.

[0069] As described above, depending on the process steps being performed by the tool, the controller may be in communication with one or more of other tool circuits or tool modules, other tool components, cluster tools, other tool interfaces, adjacent tools, nearby tools, tools installed throughout the factory, a main computer, another controller, or tools used to transport materials to and from tool locations and / or load ports in a semiconductor manufacturing factory to transport wafer containers. The present disclosure includes the following application examples: [Application example 1] 1. A temperature controlled substrate support for a substrate processing system, comprising: a substrate support each having N zones and N resistive heating elements, N being an integer greater than 1, one of the N zones being provided with a temperature sensor; a controller, Calculating the resistance of N of the N operating resistive heating elements; During operation of the substrate processing system, the temperature in said one of said N zones measured by said temperature sensor; and The resistances of the N resistive heating elements; The resistance ratio of N-1, a controller configured to adjust power to N-1 of the N resistive heating elements in response to 1. A temperature controlled substrate support comprising: [Application example 2] The temperature-controlled substrate support according to Application Example 1, A temperature controlled substrate support, wherein the N-1 resistance ratios are determined by measuring the N resistances of the N resistive heating elements in the N zones when the substrate support is at a uniform temperature, and dividing N-1 of the N resistances of the N-1 of the N zones by one of the N resistances corresponding to the one of the N zones. [Application example 3] The temperature-controlled substrate support according to Application Example 2, A temperature-controlled substrate support, wherein the uniform temperature corresponds to ambient temperature. [Application example 4] The temperature-controlled substrate support according to Application Example 1, The temperature-controlled substrate support, wherein the N-1 zone does not include a temperature sensor. [Application example 5] The temperature-controlled substrate support according to Application Example 1, The controller monitoring N voltages supplied to the N resistance heating elements, respectively; Calculating the resistance of each of the N resistors based on the voltages supplied to the N resistors; and calculating the N resistances of the N resistive heating elements during operation by: [Application Example 6] The temperature-controlled substrate support according to Application Example 1, The controller monitoring N currents supplied to the N resistive heating elements, respectively; Calculating the resistance of each of the N based on the N currents supplied to the N resistive heating elements; and calculating the N resistances of the N resistive heating elements during operation by: [Application Example 7] The temperature-controlled substrate support according to Application Example 1, The controller monitoring N currents and N voltages supplied to the N resistive heating elements, respectively; Calculating the resistance of each of the N based on the current and voltage of each of the N supplied to the resistance heating elements of each of the N; and calculating the N resistances of the N resistive heating elements during operation by: [Application Example 8] The temperature-controlled substrate support according to Application Example 1, The temperature controlled substrate support, wherein the controller is configured to control power to the one of the N zones based on the temperature measured by the temperature sensor. [Application Example 9] 1. A method of manufacturing a temperature controlled substrate support for a substrate processing system, comprising: embedding N resistive heating elements in N zones of a substrate support; embedding a temperature sensor in one of the N zones of the substrate support; measuring the resistance of N of the N resistive heating elements in the N zones of the substrate support; determining an N-1 resistance ratio based on the N resistances; connecting a controller to the N resistive heating elements and the temperature sensor; During operation of the substrate processing system, the measured temperature in said one of said N zones; and The resistances of the N resistive heating elements; The resistance ratio of the N-1; programming the controller to control temperatures of N-1 of the N resistive heating elements in N-1 of the N zones, respectively, in response to A method comprising: [Application Example 10] The method according to Application Example 9, The resistance ratio of N-1 is determining a resistance of each of the N resistive heating elements when the substrate support is at a uniform temperature; Dividing N-1 of the N resistors in the N-1 zones by one of the N resistors corresponding to the one of the N zones; The method is calculated by: [Application Example 11] The method according to Application Example 9, The method wherein the uniform temperature corresponds to ambient temperature. [Application Example 12] The method according to Application Example 9, The method, wherein N-1 of the N zones are not equipped with temperature sensors. [Application Example 13] The method according to Application Example 9, The step of measuring the resistance of the N of the N resistance heating elements includes: monitoring N voltages supplied to the N resistance heating elements, respectively; Calculating the resistance of each of the N resistors based on the voltages supplied to the N resistor heating elements; A method comprising: [Application Example 14] The method according to Application Example 9, The step of measuring the resistance of the N zones includes: monitoring N currents supplied to the N resistive heating elements; Calculating the resistance of each of the N resistors based on the N currents supplied to the N resistor heating elements; A method comprising: [Application Example 15] The method according to Application Example 9, The step of measuring the resistance of the N zones during operation includes: monitoring the N currents and N voltages supplied to the N resistive heating elements, respectively; Calculating the resistance of each of the N based on the current and voltage of each of the N supplied to the resistance heating elements; A method comprising: [Application Example 16] 1. A method for controlling a temperature of a zone in a substrate support of a substrate processing system, comprising: measuring a temperature in one of the N zones of a substrate support using a temperature sensor located in one of the N zones during operation of the substrate processing system, where N is an integer greater than 1; measuring resistances of the N resistive heating elements installed in the N zones during operation of the substrate processing system; During operation of the substrate processing system, the measured temperature in said one of said N zones; and The resistances of the N resistive heating elements; The resistance ratio of N-1, adjusting power to N-1 of the N resistive heating elements in N-1 of the N zones, respectively, to control the temperature in N-1 of the N zones in response to A method comprising: [Application Example 17] The method according to Application Example 16, The resistance ratio of N-1 is determining the resistance of each of the N resistive heating elements when the substrate support is at a uniform temperature; Dividing N-1 of the N resistors in N-1 of the N zones by one of the N resistors corresponding to said one of the N zones; The method is calculated by: [Application Example 18] The method according to Application Example 17, The method wherein the uniform temperature corresponds to ambient temperature. [Application Example 19] The method according to Application Example 16, The method, wherein N-1 of the N zones are not equipped with temperature sensors. [Application Example 20] The method according to Application Example 16, The step of measuring the resistance of the N of the N resistance heating elements includes: monitoring N voltages supplied to the N resistance heating elements, respectively; Calculating the resistance of each of the N resistors based on the voltages supplied to the N resistor heating elements; A method comprising: [Application Example 21] The method according to Application Example 16, The step of measuring the resistance of the N zones includes: monitoring N currents supplied to the N resistive heating elements; Calculating the resistance of each of the N resistors based on the N currents supplied to the N resistor heating elements; A method comprising: [Application Example 22] The method according to Application Example 16, The step of measuring the resistance of the N zones during operation includes: monitoring the N currents and N voltages supplied to the N resistive heating elements, respectively; Calculating the resistance of each of the N based on the current and voltage of each of the N supplied to the resistance heating elements; A method comprising: [Application Example 23] The method according to Application Example 16, further comprising: controlling power to said one of said N zones based on said temperature measured by said temperature sensor.

Claims

1. 1. A temperature controlled substrate support for a substrate processing system, comprising: a substrate support each having N zones and N resistive heating elements, where N is an integer greater than 1, and one of the N zones is provided with a temperature sensor; a controller, calculating N resistances for the N resistive heating elements during operation of the substrate processing system; During the operation of the substrate processing system, (i) a temperature measured by the temperature sensor located in the one of the N zones; and (ii) the N resistors for all of the N resistive heating elements in the N zones; a controller configured to adjust power to N-1 of the N resistive heating elements in N-1 of the N zones in response to 1. A temperature controlled substrate support comprising:

2. A temperature controlled substrate support for a substrate processing system, comprising: a substrate support each having N zones and N resistive heating elements, where N is an integer greater than 1, and one of the N zones is provided with a temperature sensor; a controller, calculating N resistances for the N resistive heating elements during operation of the substrate processing system; During the operation of the substrate processing system, a temperature measured by the temperature sensor installed in the one of the N zones; the N resistors for the N resistive heating elements; a controller configured to adjust power to N-1 of the N resistive heating elements in response to Equipped with the controller is configured to adjust power to each of the N-1 resistive heating elements in response to (i) the temperature measured in the one of the N zones and (ii) the resistance of the resistive heating element in the one of the N zones and the resistance of the resistive heating element in each of the zones.

3. A temperature controlled substrate support for a substrate processing system, comprising: a substrate support each having N zones and N resistive heating elements, where N is an integer greater than 1, and one of the N zones is provided with a temperature sensor; a controller, calculating N resistances for the N resistive heating elements during operation of the substrate processing system; During the operation of the substrate processing system, a temperature measured by the temperature sensor installed in the one of the N zones; the N resistors for the N resistive heating elements; a controller configured to adjust power to N-1 of the N resistive heating elements in response to Equipped with the controller is configured to adjust power to the one of the N resistive heating elements in the one of the N zones based on the temperature measured by the temperature sensor located in the one of the N zones.

4. 10. The temperature controlled substrate support of claim 1, The temperature controlled substrate support, wherein the controller is configured to calculate the N resistances of the N resistive heating elements without measuring temperatures of N-1 zones.

5. A temperature controlled substrate support for a substrate processing system, comprising: a substrate support each having N zones and N resistive heating elements, where N is an integer greater than 1, and one of the N zones is provided with a temperature sensor; a controller, calculating N resistances for the N resistive heating elements during operation of the substrate processing system; During the operation of the substrate processing system, a temperature measured by the temperature sensor installed in the one of the N zones; the N resistors for the N resistive heating elements; a controller configured to adjust power to N-1 of the N resistive heating elements in response to Equipped with the controller is configured to adjust power to the N-1 resistive heating elements in response to N-1 resistance ratios calculated by dividing N-1 resistances of the N-1 resistive heating elements by the resistance of one of the N zones.

6. 6. The temperature controlled substrate support of claim 5, the controller is configured to determine the N-1 resistance ratios by measuring the N resistances of the N resistive heating elements in the N zones when the substrate support is at a uniform temperature.

7. 7. The temperature controlled substrate support of claim 6, A temperature-controlled substrate support, wherein the uniform temperature corresponds to ambient temperature.

8. 10. The temperature controlled substrate support of claim 1, A temperature controlled substrate support, wherein N-1 of the N zones do not include temperature sensors.

9. 10. The temperature controlled substrate support of claim 1, The controller monitoring N voltages supplied to the N resistance heating elements, respectively; Calculating the N resistances based on the N voltages supplied to the N resistive heating elements; a temperature controlled substrate support configured to calculate the N resistances for the N resistive heating elements by:

10. 10. The temperature controlled substrate support of claim 1, The controller monitoring N currents supplied to the N resistive heating elements, respectively; Calculating the N resistances based on the N currents supplied to the N resistive heating elements; a temperature controlled substrate support configured to calculate the N resistances for the N resistive heating elements by:

11. 10. The temperature controlled substrate support of claim 1, The controller monitoring N currents and N voltages supplied to the N resistive heating elements, respectively; Calculating the N resistances based on the N currents and the N voltages supplied to the N resistive heating elements; a temperature controlled substrate support configured to calculate the N resistances for the N resistive heating elements by:

12. 1. A method of operating a temperature controlled substrate support for a substrate processing system, comprising: embedding N resistive heating elements in N zones of a substrate support, where N is an integer greater than 1; embedding a temperature sensor located in one of the N zones; calculating N resistances for the N resistive heating elements during operation of the substrate processing system; During the operation of the substrate processing system, (i) a temperature measured by the temperature sensor located in the one of the N zones; and (ii) the N resistors for all of the N resistive heating elements in the N zones; adjusting power to N-1 of the N resistive heating elements in N-1 of the N zones in response to A method comprising:

13. A method of operating a temperature controlled substrate support for a substrate processing system, comprising: embedding N resistive heating elements in N zones of a substrate support, where N is an integer greater than 1; embedding a temperature sensor located in one of the N zones; calculating N resistances for the N resistive heating elements during operation of the substrate processing system; During the operation of the substrate processing system, a temperature measured by the temperature sensor installed in the one of the N zones; the N resistors for the N resistive heating elements; adjusting power to N-1 of the N resistive heating elements in response to and adjusting power to each of the N-1 resistive heating elements in response to (i) the temperature measured in the one of the N zones, and (ii) the resistance of the resistive heating element in the one of the N zones and the resistance of the resistive heating element in each of the zones.

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