Substrate processing apparatus and substrate processing method

Abstract

A substrate processing device for irradiating a substrate with laser light and processing the substrate, the substrate processing device having a substrate holding part for holding the substrate, a laser irradiation unit for irradiating the substrate held by the substrate holding part with the laser light, and a dust collection part for collecting dust, the dust collection part having an upper dust collection part disposed above the substrate holding part, and a lower dust collection part that moves below the upper dust collection part. A substrate processing method includes: causing the substrate holding part and the lower dust collection part to move below the upper dust collection part; and suctioning the atmosphere in a space between the upper dust collection part, the substrate, and the lower dust collection part to collect dust while irradiating the substrate with the laser light from the laser irradiation unit.

Description

[Technical Field]

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method. [Background technology]

[0002] Patent Document 1 discloses a laser processing device. The laser processing device includes a laser beam irradiation means having a condenser for laser processing a workpiece, and a dust discharge means for collecting and discharging dust generated by the irradiation of the laser beam. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2007-069249 Summary of the Invention [Problem to be solved by the invention]

[0004] The technology according to the present disclosure appropriately collects dust particles that are generated when a substrate is processed by irradiating the substrate with laser light. [Means for solving the problem]

[0005] One aspect of the present disclosure is a substrate processing apparatus that processes a substrate by irradiating the substrate with laser light, the substrate processing apparatus including: a substrate holding unit that holds the substrate; a laser irradiation unit that irradiates the laser light onto the substrate held by the substrate holding unit; and a dust collecting unit that collects dust. a rotating unit that rotates the substrate holding unit; the dust collecting unit has an upper dust collecting unit disposed above the substrate holding unit and a plate that moves relative to a position below the upper dust collecting unit, and the height of the upper surface of the plate is the same as the height of the upper surface of the substrate held by the substrate holding unit. The plate is disposed close to the outer periphery of the substrate holder, and a gap is formed between the plate and the substrate holder. [Effects of the Invention]

[0006] According to the present disclosure, when a substrate is processed by irradiating the substrate with laser light, dust generated can be appropriately collected. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 2 is a side view illustrating an example of an overlapping wafer being processed in a wafer processing system. [Figure 2] FIG. 1 is a plan view schematically illustrating an outline of the configuration of a wafer processing system. [Figure 3] 1A to 1C are explanatory views showing main steps of wafer processing. [Figure 4] FIG. 1 is a flow diagram showing the main steps of wafer processing. [Figure 5] FIG. 10 is an explanatory diagram showing the state of a peripheral modified layer formed inside the first wafer. [Figure 6] FIG. 2 is a plan view showing an outline of the configuration of the membrane treatment device. [Figure 7] FIG. 2 is a side view showing an outline of the configuration of the membrane treatment device. [Figure 8] FIG. 2 is a side view showing an outline of the configuration of the membrane treatment device. [Figure 9] FIG. 2 is a cross-sectional perspective view showing an outline of the configuration of a laser irradiation unit and a part of an upper dust collecting unit. [Figure 10] FIG. 2 is a perspective view showing the outline of the configuration of the upper dust collecting section. [Figure 11] FIG. 2 is a cross-sectional perspective view showing the outline of the configuration of the upper dust collecting section. [Figure 12] FIG. 3 is a plan view showing an outline of the configuration of a portion of the upper dust collecting section. [Figure 13] FIG. 2 is a cross-sectional perspective view showing the outline of the configuration of a part of the upper dust collecting section. [Figure 14] FIG. 4 is an explanatory diagram showing the flow of atmosphere in the upper dust collecting section. [Figure 15] FIG. 4 is an explanatory diagram showing the flow of atmosphere in the upper dust collecting section. [Figure 16] FIG. 2 is a side view showing an outline of the configuration of a lower dust collecting section. [Figure 17] FIG. 2 is a plan view showing the outline of the configuration of a lower dust collecting section. [Figure 18]FIG. 10 is an explanatory diagram showing a comparative example in which a lower dust collecting section is not provided. [Figure 19] FIG. 2 is a perspective view showing the outline of the configuration of a lower dust collecting section. [Figure 20] FIG. 1 is an explanatory diagram showing the main steps of membrane treatment. [Figure 21] FIG. 1 is a flow diagram showing the main steps of membrane treatment. DETAILED DESCRIPTION OF THE INVENTION

[0008] In recent years, in the manufacturing process of semiconductor devices, processes are being carried out on overlapped wafers, which are semiconductor substrates (hereinafter referred to as "wafers") bonded together, each having a plurality of devices such as electronic circuits formed on its surface. For example, the first wafer that forms the overlapped wafer is thinned, and the devices formed on the first wafer are transferred to the second wafer that forms the overlapped wafer.

[0009] Typically, the peripheral edge of a wafer is chamfered, but as described above, when the overlapping wafer is subjected to the thinning process or transfer process, the peripheral edge of the first wafer after thinning or the overlapping wafer after transfer may become sharp (so-called knife-edge shape). This can cause chipping at the peripheral edge of these wafers, which can damage the wafer. Therefore, the peripheral edge of the first wafer before processing is removed, a process known as edge trimming.

[0010] Here, after edge trimming, unwanted surface films and particles remain on the surface of the second wafer, specifically, on the peripheral edge of the second wafer exposed by removing the first wafer. These surface films and particles may peel off, fall off, or scatter during transport or processing of the laminated wafer, potentially contaminating the inside of the wafer processing system, the inside of the cassette, or other laminated wafers. Therefore, after edge trimming, the surface films on the peripheral edge of the second wafer are removed.

[0011] There are various methods for removing the surface film on the peripheral edge, for example, by irradiating the surface film with laser light. When using laser light in this way, fine dust particles are generated by the laser processing (ablation processing). If the dust particles adhere to the focusing lens of the laser light, the processing quality will decrease. Furthermore, if the dust particles adhere to the wafer surface, the production yield of the product wafer will decrease. Furthermore, if the dust particles adhere to the wafer processing equipment, the operating rate will decrease.

[0012] Therefore, a conventional laser processing apparatus (wafer processing apparatus) disclosed in Patent Document 1, for example, is provided with a dust discharge means for collecting and discharging dust generated during laser processing. The dust discharge means includes a cover member having an opening on the bottom wall through which the laser light irradiated from the condenser passes and which sucks in the dust. The laser light is irradiated onto the wafer while the wafer is moved from one end to the other.

[0013] When irradiating the edge (one edge or the other edge) of the wafer with a laser, a collector and a cover member are placed directly above the edge. In this case, the opening in the cover member is covered by the wafer in a plan view from the inside of the wafer's edge, but the area radially outside the edge is exposed. This can cause uneven suction of dust around the entire circumference of the opening, making it difficult to stably collect dust. Therefore, there is room for improvement in conventional substrate processing.

[0014] The technology disclosed herein appropriately collects dust particles generated when a substrate is irradiated with laser light to process the substrate. Hereinafter, a wafer processing system including a film processing apparatus as a substrate processing apparatus according to the present embodiment, and a wafer processing method as a substrate processing method will be described with reference to the drawings. Note that in this specification and the drawings, elements having substantially the same functional configuration are designated by the same reference numerals, and redundant description will be omitted.

[0015] In a wafer processing system 1 according to this embodiment, which will be described later, processing is performed on a bonded wafer T, which is a substrate formed by bonding a first wafer W1 and a second wafer W2, as shown in FIG. 1 . The wafer processing system 1 then removes a peripheral portion We of the first wafer W1. Hereinafter, the surface of the first wafer W1 that is bonded to the second wafer W2 will be referred to as the front surface W1a, and the surface opposite the front surface W1a will be referred to as the back surface W1b. Similarly, the surface of the second wafer W2 that is bonded to the first wafer W1 will be referred to as the front surface W2a, and the surface opposite the front surface W2a will be referred to as the back surface W2b. Furthermore, in the first wafer W1, the region radially inward of the peripheral portion We to be removed will be referred to as the central portion We.

[0016] The first wafer W1 is a semiconductor wafer such as a silicon substrate, and has a device layer D1 including a plurality of devices formed on its surface W1a. A bonding film F1 is further formed on the device layer D1, and the first wafer W1 is bonded to the second wafer W2 via the bonding film F1. Examples of the bonding film F1 include an oxide film (SiO2 film, TEOS film), a SiC film, a SiCN film, or an adhesive. The peripheral edge We of the first wafer W1 is chamfered, and the cross-section of the peripheral edge We becomes thinner toward its tip. The peripheral edge We is a portion to be removed during edge trimming, which will be described later. The peripheral edge We extends, for example, from 0.5 mm to 5 mm in the radial direction from the outer edge of the first wafer W1. A laser absorbing layer (not shown) capable of absorbing laser light irradiated to the inside of the overlapped wafer T during removal of the peripheral edge We may be further formed at the interface between the first wafer W1 and the device layer D1. The bonding film F1 formed on the device layer D1 may also be used as the laser absorbing layer.

[0017] The second wafer W2 has, for example, the same configuration as the first wafer W1, and has a device layer D2 and a bonding film F2 formed on its surface W2a, with its peripheral edge being chamfered. Note that the second wafer W2 does not necessarily have to be a device wafer on which the device layer D2 is formed, and may be, for example, a support wafer that supports the first wafer W1. In such a case, the second wafer W2 functions as a protective material that protects the device layer D1 of the first wafer W1.

[0018] In this embodiment, the device layers D1, D2 and bonding films F1, F2 formed on the first wafer W1 and the second wafer W2 may be referred to as “surface films.” In other words, the first wafer W1 and the second wafer W2 according to this embodiment are formed with a plurality of stacked surface films.

[0019] 2, the wafer processing system 1 has a configuration in which a load / unload block G1, a transfer block G2, and a processing block G3 are integrally connected. The load / unload block G1, the transfer block G2, and the processing block G3 are arranged in this order from the negative side of the X axis.

[0020] The carry-in / out block G1 carries in and out a cassette C capable of accommodating a plurality of overlapped wafers T, for example, between the outside and the block. A cassette mounting table 10 is provided in the carry-in / out block G1. In the illustrated example, the cassette mounting table 10 can freely mount a plurality of cassettes C, for example, four cassettes C, in a line in the Y-axis direction. The number of cassettes C mounted on the cassette mounting table 10 is not limited to that in this embodiment and can be determined arbitrarily.

[0021] In the transfer block G2, a wafer transfer device 20 is provided adjacent to the cassette mounting table 10 on the positive side of the X-axis of the cassette mounting table 10. The wafer transfer device 20 is configured to be movable on a transfer path 21 extending in the Y-axis direction. The wafer transfer device 20 also has, for example, two transfer arms 22, 22 that hold and transfer the overlapped wafer T. Each transfer arm 22 is configured to be movable horizontally, vertically, around a horizontal axis, and around a vertical axis. The configuration of the transfer arm 22 is not limited to this embodiment and may have any configuration. The wafer transfer device 20 is also configured to be able to transfer the overlapped wafer T to the cassette C on the cassette mounting table 10 and to a transition device 30, which will be described later.

[0022] In the transfer block G2, a transition device 30 for transferring the overlapped wafer T is provided adjacent to the wafer transfer device 20 on the positive side of the wafer transfer device 20 in the X-axis direction.

[0023] The processing block G3 includes a wafer transfer device 40, a cleaning device 50, a peripheral edge removal device 60, an interface modification device 70, an internal modification device 80, a film processing device 90 as a substrate processing device, and an inspection device 100.

[0024] The wafer transfer device 40 is configured to be movable on a transfer path 41 extending in the X-axis direction. The wafer transfer device 40 also has, for example, two transfer arms 42, 42 that hold and transfer the overlapped wafer T. Each transfer arm 42 is configured to be movable horizontally, vertically, around a horizontal axis, and around a vertical axis. The configuration of the transfer arm 42 is not limited to this embodiment and may have any configuration. The wafer transfer device 40 is also configured to be able to transfer the overlapped wafer T to the transition device 30, the cleaning device 50, the edge removal device 60, the interface modification device 70, the internal modification device 80, and the film processing device 90.

[0025] The cleaning device 50 cleans the overlapped wafer T. The edge removal device 60 removes the edge portion We of the first wafer W1, i.e., performs edge trimming. The interface modification device 70 irradiates the interface between the first wafer W1 and the second wafer W2 with laser light (interface laser light, e.g., CO2 laser) to form an unbonded region Ae, which will be described later. The internal modification device 80 irradiates the inside of the first wafer W1 with laser light (internal laser light, e.g., YAG laser) to form an edge modified layer M1, which serves as a base point for peeling the edge portion We, and a divided modified layer M2, which serves as a base point for dividing the edge portion We into small pieces. The film processing device 90 irradiates a laser light (film processing laser light, e.g., CO2 laser or IR laser) onto the surface film (residual film) exposed at the edge portion of the second wafer W2 by the edge trimming. The detailed configuration of the film processing device 90 will be described later. The inspection device 100 inspects the peripheral edge of the first wafer W1 after the unbonded area Ae is formed, or the peripheral edge of the second wafer W2 after the film processing.

[0026] The wafer processing system 1 described above is provided with a control device 110. The control device 110 is, for example, a computer equipped with a CPU, a memory, etc., and has a program storage unit (not shown). The program storage unit stores a program for controlling the processing of the overlapped wafer T in the wafer processing system 1. The program may be recorded on a computer-readable storage medium H and installed from the storage medium H into the control device 110. The storage medium H may be temporary or non-temporary.

[0027] Next, a description will be given of wafer processing performed using the wafer processing system 1 configured as described above. In this embodiment, a first wafer W1 and a second wafer W2 are bonded together in a bonding device (not shown) external to the wafer processing system 1 to form an overlapped wafer T in advance.

[0028] First, a cassette C containing a plurality of overlapping wafers T is placed on the cassette mounting table 10 of the carry-in / out block G1. Next, the overlapping wafers T are removed from the cassette C by the wafer transfer device 20. The overlapping wafers T removed from the cassette C are transferred to the wafer transfer device 40 via the transition device 30 and then transferred to the interface modification device 70. As shown in FIG. 3(a), the interface modification device 70 irradiates the interface between the first wafer W1 and the device layer D1 (more specifically, the laser absorption layer formed at the interface) with laser light (for example, a CO2 laser having a wavelength of 8.9 μm to 11 μm) while rotating the overlapping wafer T (first wafer W1), thereby forming an unbonded region Ae (step S1 in FIG. 4).

[0029] In the unbonded region Ae, the interface between the first wafer W1 and the device layer D1 is modified or peeled off, reducing or eliminating the bonding strength between the first wafer W1 and the second wafer W2. As a result, an annular unbonded region Ae is formed at the interface between the first wafer W1 and the device layer D1, and a bonded region Ac, where the first wafer W1 and the second wafer W2 are bonded, is formed radially inside the unbonded region Ae. In the edge trimming process described below, the peripheral edge We of the first wafer W1, which is the target for removal, is removed. The presence of the unbonded region Ae allows the peripheral edge We to be removed appropriately.

[0030] The overlapped wafer T with the unbonded region Ae formed therein is then transferred by the wafer transfer device 40 to the internal reforming device 80. In the internal reforming device 80, as shown in FIGS. 3(b) and 5, a peripheral modified layer M1 and divided modified layers M2 are formed inside the first wafer W1 (step S2 in FIG. 4). The peripheral modified layer M1 serves as a base point for removing the peripheral portion We in the edge trimming described below. The divided modified layers M2 serve as base points for dividing the peripheral portion We into small pieces to be removed. Note that in the drawings used in the following explanation, the divided modified layers M2 may be omitted to avoid complicating the illustrations.

[0031] 3(b), a crack C1 extends from the peripheral modified layer M1 formed inside the first wafer W1 in the thickness direction of the first wafer W1. The lower end of the crack C1 reaches, for example, the surface W1a or the unbonded region Ae of the first wafer W1.

[0032] The overlapped wafer T, in which the peripheral modified layer M1 and the divided modified layer M2 are formed inside the first wafer W1, is then transferred by the wafer transfer device 40 to the peripheral removal device 60. In the peripheral removal device 60, as shown in FIG. 3(c), the peripheral portion We of the first wafer W1 is removed, i.e., an edge trimming process is performed (step S3 in FIG. 4). At this time, the peripheral portion We is peeled from the center portion Wc of the first wafer W1 using the peripheral modified layer M1 and the crack C1 as base points, and is also peeled from the device layer D1 (second wafer W2) using the unbonded region Ae as base points. At this time, the removed peripheral portion We is also broken into small pieces using the divided modified layer M2 and the crack C2 as base points.

[0033] To remove the peripheral edge portion We, for example, a wedge-shaped blade may be inserted into the interface between the first wafer W1 and the second wafer W2 that form the overlapped wafer T. To perform edge trimming, an impact is applied to the peripheral edge portion We of the first wafer W1, so that the peripheral edge portion We is properly peeled off from the peripheral modified layer M1 and the crack C1 as starting points.

[0034] The overlapped wafer T from which the peripheral edge We of the first wafer W1 has been removed is then transferred by the wafer transfer device 40 to the film processing device 90. In the film processing device 90, as shown in FIG. 3(d), a process (hereinafter sometimes referred to as "film processing") is performed to remove the surface film from the peripheral edge of the second wafer W2 from which the peripheral edge We has been removed (step S4 in FIG. 4).

[0035] After the peripheral edge We is removed, unwanted surface films and particles remain on the surface of the second wafer W2, specifically, on the peripheral edge of the second wafer W2 exposed by the removal of the first wafer W1. These surface films and particles may peel off, fall off, or scatter during transport or processing of the overlapped wafer T, potentially contaminating the inside of the wafer processing system 1, the inside of the cassette C, or other overlapped wafers T.

[0036] Therefore, in step S4, in order to suppress scattering of the surface film and particles after removing the peripheral portion We, the surface film on the peripheral portion of the second wafer W2 is removed by, for example, irradiating the surface film with laser light (for example, a CO laser) to remove the surface film.

[0037] In this case, the surface film is removed by irradiation with laser light, and particles remaining on the surface of the surface film are also removed, so that the surface film and particles are prevented from peeling off, falling off, or scattering.

[0038] The laminated wafer T, from which the surface film on the peripheral edge of the second wafer W2 has been removed, is then transferred by the wafer transfer device 40 to the cleaning device 50. In the cleaning device 50, the peripheral edge We is removed, and the back surface W1b of the first wafer W1 after the film treatment and the exposed portion are cleaned (step S5 in FIG. 4). Note that in the cleaning device 50, the back surface W2b of the second wafer W2 may be cleaned together with the back surface W1b of the first wafer W1.

[0039] Thereafter, the overlapped wafer T on which all wafer processes have been performed is transferred by the wafer transfer device 20 to the cassette C on the cassette mounting table 10 via the transition device 30. In this way, a series of wafer processes in the wafer processing system 1 is completed.

[0040] Next, the detailed configuration of the above-mentioned film treatment device 90 will be described.

[0041] As shown in FIGS. 6 to 8 , the film processing apparatus 90 includes a chuck 200 as a substrate holder that holds the overlapped wafer T on its upper surface. With the first wafer W1 positioned on top and the second wafer W2 positioned on the bottom, the chuck 200 suction-holds the backside W2b of the second wafer W2. The chuck 200 is supported by a slider table 202 via an air bearing 201. A rotating unit 203 is provided on the underside of the slider table 202. The rotating unit 203 incorporates, for example, a motor as a drive source. The chuck 200 is configured to be rotatable about a vertical axis by the rotating unit 203 via the air bearing 201. The slider table 202 is configured to be movable on rails 206 extending in the Y-axis direction on a base 205 via a moving unit 204 provided on the underside of the slider table 202. The driving source of the moving unit 204 is not particularly limited, but a linear motor, for example, is used.

[0042] A macro camera 210 is provided above the chuck 200. For example, the macro camera 210 is supported by a support column 211. The macro camera 210 captures an image of the outer edge of the second wafer W2. The macro camera 210 is equipped with, for example, a coaxial lens, irradiates infrared light (IR light), and receives reflected light from an object. For example, the imaging magnification of the macro camera 210 is 2x. The image captured by the macro camera 210 is output to the control device 110. The control device 110 calculates the amount of eccentricity between the center of the chuck 200 and the center of the second wafer W2 from the image captured by the macro camera 210.

[0043] Above the chuck 200 and on the negative Y-axis side of the macro camera 210, a laser irradiation unit 220 is provided that irradiates a laser beam onto the laminated wafer T held by the chuck 200. The laser irradiation unit 220 is connected to a laser head (not shown) that incorporates a laser oscillator (not shown) that oscillates the laser beam. The laser irradiation unit 220 is supported by a support member 221. The laser irradiation unit 220 is configured to be able to move up and down by an elevator unit 223 along rails 222 that extend in the vertical direction. The laser irradiation unit 220 is also configured to be able to move in the Y-axis direction by a moving unit 225 along rails 224 that extend in the Y-axis direction on the support column 211.

[0044] The laser irradiation unit 220 irradiates a surface film on the peripheral edge of the second wafer W2 with laser light to remove the surface film. The laser irradiation unit 220 includes a condenser lens 231 and a nozzle 232.

[0045] As shown in FIG. 9, the condenser lens 231 condenses the laser light emitted from the laser oscillator of the laser head and irradiates the laser light onto the surface film on the peripheral edge of the second wafer W2.

[0046] The nozzle 232 is provided below the condenser lens 231. The nozzle 232 is a hollow cylindrical member through which the laser light from the condenser lens 231 passes and is irradiated onto the surface film on the peripheral edge of the second wafer W2.

[0047] A first gas supply unit 233 is provided above the nozzle 232 to supply gas such as dry air into the nozzle 232. The first gas supply unit 233 is connected to an air supply path 232a formed inside the sidewall of the nozzle 232. The gas supplied from the first gas supply unit 233 and the air supply path 232a flows downward through the nozzle 232 and is sprayed onto the surface film at the peripheral edge of the second wafer W2. This gas can prevent dust generated during laser processing from adhering to the condenser lens 231.

[0048] 6 to 8, the film processing apparatus 90 has a dust collection unit 240 that collects dust. The dust collection unit 240 collects fine dust generated during the film processing (laser processing) in step S4 described above, i.e., when the laser irradiation unit 220 irradiates the surface film on the peripheral edge of the second wafer W2 with laser light. The dust collection unit 240 has an upper dust collection unit 241 and a lower dust collection unit 242.

[0049] The upper dust collection unit 241 is provided above the chuck 200 and directly below the laser irradiation unit 220. As shown in Figures 10 and 11, the upper dust collection unit 241 has a sleeve 250 and an exhaust duct 260. The sleeve 250 is provided on the upper surface of the exhaust duct 260.

[0050] As shown in Figures 9 and 11, the sleeve 250 has a generally truncated cone shape whose diameter decreases from top to bottom. A storage section 251 that stores a portion of the nozzle 232 of the laser irradiation unit 220 is formed in the center of the upper surface of the sleeve 250. The nozzle 232 can move up and down relative to the storage section 251 and enter or leave the storage section 251. For example, the laser head is provided with a power meter (not shown) for checking the output of the laser light, but the output of this laser light cannot be measured while exhaust is being performed by the dust collection unit 240. Therefore, in such a case, the nozzle 232 is retracted from the storage section 251. On the other hand, during laser processing, the nozzle 232 is stored in the storage section 251.

[0051] Furthermore, nozzle 232 is movable in the Y-axis direction in storage section 251. Furthermore, nozzle 232 is rotatable at its lower end with its upper end as a base point. Note that nozzle 232 does not come into contact with storage section 251 when stored in storage section 251.

[0052] As described above, nozzle 232 is movable in the Y-axis direction, and to enable movement during laser processing, accommodating section 251 may have an elongated hole shape with its major axis in the Y-axis direction, as shown in Fig. 12. Further, elongated hole 252 for passing laser light irradiated from nozzle 232 is formed in the lower surface of accommodating section 251, and this elongated hole 252 may also have its major axis in the Y-axis direction. Note that, during film processing, the movement distance of nozzle 232 is, for example, 2 mm to 5 mm, as will be described later. For this reason, the length of elongated hole 252 in the Y-axis direction is preferably 5 mm or more.

[0053] As shown in FIGS. 9 and 11 , a second air supply unit 253 is provided on the upper surface of the sleeve 250 on the positive side of the X-axis of the housing unit 251. The second air supply unit 253 supplies gas such as dry air to an air intake passage 262 (described later). The second air supply unit 253 is connected to an air supply passage 250a formed by penetrating the sleeve 250 from the upper surface to the lower surface. The air supply passage 250a is connected to an outlet portion 250b formed on the lower surface of the sleeve 250. The gas supplied from the outlet portion 250b via the second air supply unit 253 and the air supply passage 250a flows into the air intake passage 262. This gas blows away fumes generated during laser processing. The gas from the second air supply unit 253 guides the atmosphere in the air intake passage 262 to an exhaust passage 263 (described later). At this time, the fumes are also guided to the exhaust passage 263.

[0054] As will be described later, in laser processing, the overlapped wafer T is irradiated with laser light while the overlapped wafer T is being rotated. It is preferable that the gas from the second gas supply unit 253, the gas supply path 250a, and the discharge unit 250b be supplied in the rotation direction of the overlapped wafer T. In this case, the atmosphere in the gas intake path 262 can be more reliably guided to the exhaust path 263.

[0055] The exhaust duct 260 is provided so as to extend in the X-axis direction. As shown in Figures 11 and 13, an opening 261 is formed in a lower surface 260a of the exhaust duct 260 below the sleeve 250, for passing the laser light irradiated from the nozzle 232. The lower surface 260a has a substantially circular shape in a plan view. An intake flow path 262 and an exhaust flow path 263 are formed inside the exhaust duct 260.

[0056] The intake passage 262 is a passage formed between the sleeve 250 and the opening 261. The intake passage 262 sucks the atmosphere between the overlapped wafer T held by the chuck 200 and the exhaust duct 260 through the opening 261.

[0057] The exhaust flow path 263 is a flow path that communicates with the intake flow path 262 and extends in the tangential direction of the overlapped wafer T, i.e., in the X-axis direction. The exhaust flow path 263 communicates with an exhaust pipe 264 provided at the end of the exhaust duct 260 on the X-axis negative side. The exhaust pipe 264 is connected to an exhaust device (not shown) that sucks the atmosphere inside the exhaust duct 260.

[0058] As shown in FIGS. 9 and 11 , a third air supply unit 265 that supplies gas such as dry air is provided inside the exhaust duct 260 on the positive X-axis side of the accommodation unit 251. The third air supply unit 265 is connected to an air supply path 260b that penetrates from the side wall of the exhaust duct 260 to the lower surface. The air supply path 260b is connected to an outlet portion 260c that is formed on the lower surface 260a of the exhaust duct 260. A plurality of outlet portions 260c are provided around the opening 261 on the lower surface 260a of the exhaust duct 260. The plurality of outlet portions 260c are provided at equal intervals on a circle concentric with the opening 261; that is, the radial distance between each outlet portion 260c and the lower surface 260a is equal. Therefore, the atmosphere between the exhaust duct 260 and the overlapped wafer T is uniformly sucked through the opening 261.

[0059] The gas supplied from the third air supply section 265, the air supply path 260b, and the discharge section 260c is ejected downward around the opening 261, forming a so-called air curtain. In this case, dust generated by laser processing is prevented from escaping to the outside of the air curtain. Furthermore, because the diameter of the opening 261 is larger than the gap outside the air curtain, the gas from the third air supply section 265, the air supply path 260b, and the discharge section 260c flows into the intake path 262 through the opening 261. In this case, dust also flows into the intake path 262 through the opening 261, so that the dust can be reliably collected in the exhaust duct 260. Note that the number of air supply paths 260b on the lower surface 260a of the exhaust duct 260 is not limited, but the greater the number, the more effective the air curtain becomes.

[0060] As shown in FIG. 12 , a fourth air supply unit 266 that supplies gas such as dry air is provided on the side surface of exhaust duct 260 on the positive Y-axis side of accommodation unit 251. Fourth air supply unit 266 is connected to air supply path 260d that penetrates from the side wall of exhaust duct 260 toward intake flow path 262. Air supply path 260d is connected to discharge portion 260e that is formed on the inner surface of exhaust duct 260. Air supply path 260d and discharge portion 260e are formed, for example, toward the positive X-axis direction with respect to intake flow path 262. Gas supplied from fourth air supply unit 266, air supply path 260d, and discharge portion 260e flows into intake flow path 262 and forms a swirling flow in intake flow path 262. Note that the positions of air supply path 260d and discharge portion 260e are not limited to those of this embodiment, as long as they are positions that allow a swirling flow to be formed in intake flow path 262.

[0061] As shown in FIGS. 14 and 15 , during laser processing, the atmosphere between the exhaust duct 260 and the overlapped wafer T is sucked into the exhaust duct 260 through the opening 261, flows through the intake passage 262 and the exhaust passage 263, and is discharged from the exhaust pipe 264. Dust generated during laser processing is also collected along this airflow. At this time, fumes generated during laser processing are blown away by the gas from the second air supply unit 253 and guided to the exhaust passage 263. In addition, the gas from the third air supply unit 265 prevents the dust from flowing out to the outside. Furthermore, a swirling flow is formed in the intake passage 262 by the gas from the fourth air supply unit 266, and the atmosphere and dust are smoothly guided to the exhaust passage 263.

[0062] 6 and 8, the lower dust collecting section 242 has a dust collecting plate 270 and a support member 271. The dust collecting plate 270 is provided close to the outer periphery of the chuck 200. The gap between the dust collecting plate 270 and the outer periphery of the chuck 200 is, for example, 0.5 mm or less. The narrower this gap is, the more the outflow of dust to the outside can be suppressed.

[0063] 16, the height of the upper surface of the dust collection plate 270 is desirably the same as the height of the upper surface of the overlapped wafer T (the back surface W1b of the first wafer W1) held by the chuck 200. The lower surface of the dust collection plate 270 is supported by a support member 271. The support member 271 is fixed to the slider table 202. That is, the lower dust collection unit 242 is provided integrally with the chuck 200, and as the chuck 200 moves, the lower dust collection unit 242 also moves in the Y-axis direction.

[0064] 17, the dust collecting plate 270 has a substantially rectangular shape in a plan view, and an end 270a on the chuck 200 side is curved along the outer periphery of the chuck 200. However, because the chuck 200 rotates, the dust collecting plate 270 and the chuck 200 do not come into contact with each other. The length A of the dust collecting plate 270 in the Y-axis direction is greater than the diameter D of the opening 261 of the exhaust duct 260. Furthermore, the length B of the dust collecting plate 270 in the X-axis direction is greater than the radius D / 2 of the opening 261. When the dust collecting plate 270 is disposed below the exhaust duct 260 of the upper dust collecting unit 241, the dust collecting plate 270 is arranged to overlap the opening 261 in a plan view. Note that, unlike the present embodiment, if the chuck 200 does not rotate, the dust collecting plate 270 and the chuck 200 may come into contact with each other.

[0065] 18, when laser light is irradiated onto the peripheral edge of the second wafer W2 during laser processing, the opening 261 is covered by the chuck 200 in a plan view from the inner side in the radial direction from the edge of the chuck 200 (superimposed wafer T), but the outer side in the radial direction from the edge is exposed. This causes an uneven amount of dust suction around the entire circumference of the opening 261, which may prevent stable collection of dust.

[0066] 19, when the dust collecting plate 270 is disposed below the exhaust duct 260, it is arranged so as to overlap the opening 261 in a plan view. In this case, the amount of dust sucked becomes uniform all around the circumference of the opening 261, and the dust can be collected stably.

[0067] Next, the membrane treatment performed in the membrane treatment device 90 configured as above will be described.

[0068] First, as shown in Fig. 20(a), the chuck 200 is placed at the standby position P1. At this time, the nozzle 232 is accommodated in the accommodation portion 251 of the sleeve 250. Then, the overlapped wafer T is carried into the film processing apparatus 90 and held by the chuck 200 (step T1 in Fig. 21).

[0069] Next, the chuck 200 is moved to a macro alignment position. The macro alignment position is a position where the macro camera 210 can capture an image of the outer edge of the second wafer W2. Next, the macro camera 210 captures images of the outer edge of the second wafer W2 in a 360-degree circumferential direction. The captured images are output from the macro camera 210 to the control device 110.

[0070] The control device 110 calculates the amount of eccentricity between the center of the chuck 200 and the center of the second wafer W2 from the image captured by the macro camera 210. Furthermore, the control device 110 calculates the amount of movement of the chuck 200 based on the amount of eccentricity so as to correct the Y-axis component of the amount of eccentricity. Then, the position of the chuck 200 is determined so that the center of the second wafer W2m and the center of the chuck 200 coincide with each other (step T2 of u22).

[0071] Next, as shown in FIG. 20(b), the chuck 200 is moved to processing position P2 (step T3 in FIG. 21). Processing position P2 is a position where the end of the peripheral edge of the second wafer W2 in the positive Y-axis direction is located directly below the nozzle 232 of the laser irradiation unit 220. At this time, the dust collection plate 270 is located so as to overlap with the opening 261 of the exhaust duct 260 in a plan view.

[0072] Next, while the chuck 200 is rotated, the nozzle 232 is moved in the negative direction of the X axis, and the surface film on the peripheral edge of the second wafer W2 is irradiated with laser light from the nozzle 232. As a result, the laser light is irradiated in a spiral pattern on the surface film. The movement distance of the nozzle 232 is 2 mm to 5 mm, and the peripheral edge of the second wafer W2 to be processed is within a range of 2 mm to 5 mm from the outer edge. In other words, the processing width of the laser light is adjusted by moving the nozzle 232. Then, the surface film is removed (step T4 in FIG. 21).

[0073] Dust is generated during the laser processing in step T4. This dust is collected by the upper dust collection unit 241. Specifically, as described above, the atmosphere between the exhaust duct 260 and the laminated wafer T is sucked into the exhaust duct 260 through the opening 261, flows through the intake flow path 262 and the exhaust flow path 263, and is discharged from the exhaust pipe 264. Then, the dust generated during the laser processing is carried along with this air flow and collected.

[0074] After the surface film on the peripheral edge of the second wafer W2 is removed, the chuck 200 is then moved to the standby position P1. Then, the overlapped wafer T is unloaded from the film processing apparatus 90 (step T5 in FIG. 21). In this way, a series of film processing steps in the film processing apparatus 90 is completed.

[0075] According to the above embodiment, the dust collection unit 240 has the upper dust collection unit 241 and the lower dust collection unit 242, and the dust collection plate 270 of the lower dust collection unit 242 is provided so as to overlap the opening 261 in a plan view when the dust collection plate 270 is disposed below the exhaust duct 260 of the upper dust collection unit 241. This makes it possible to uniformly suck in the amount of dust around the entire circumference of the opening 261, and to stably collect the dust. Furthermore, the diameter of the opening 261 can be increased, allowing dust to be collected over a wide area. Therefore, the dust generated during laser processing can be collected appropriately and efficiently by the dust collection unit 240.

[0076] In the above embodiment, the technology of the present disclosure was applied to remove a surface film on the peripheral portion of the second wafer W2, but the technology can also be used for other purposes. For example, the technology of the present disclosure can also be applied to irradiating the entire surface of a wafer with laser light. For example, when peeling the entire surface of the first wafer W1 from the second wafer W2 and transferring the device layer D1 formed on the surface W1a of the first wafer W1 to the second wafer W2, so-called laser lift-off, the entire surface of the interface between the first wafer W1 and the second wafer W2 is irradiated with laser light. Even in such a case, the same effects as those of the above embodiment can be achieved when irradiating the peripheral portion with laser light.

[0077] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive, and the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0078] 90 Membrane treatment equipment 200 Chuck 220 Laser irradiation unit 240 Dust collection unit 241 Upper dust collection section 242 Lower dust collection section T Polymerized Wafer W1 First wafer W2 Second wafer

Claims

1. A substrate processing apparatus that processes a substrate by irradiating the substrate with laser light, a substrate holder for holding the substrate; a laser irradiation unit that irradiates the laser light onto the substrate held by the substrate holding unit; a dust collecting unit that collects dust; a rotating unit that rotates the substrate holding unit, The dust collection unit is an upper dust collecting unit disposed above the substrate holding unit; a plate that moves relative to a lower portion of the upper dust collecting section, the height of the upper surface of the plate is the same as the height of the upper surface of the substrate held by the substrate holder; the plate is disposed adjacent to the outer periphery of the substrate holder; The substrate processing apparatus, wherein a gap is formed between the plate and the substrate holder.

2. The substrate processing apparatus according to claim 1 , wherein the plate is integral with the substrate holder.

3. an opening for passing the laser light irradiated from the laser irradiation unit is formed on a lower surface of the upper dust collecting unit; The substrate processing apparatus according to claim 1 , wherein the plate is provided so as to overlap the opening in a plan view when the plate is disposed below the upper dust collecting unit.

4. The substrate processing apparatus according to claim 3 , wherein when the plate is disposed below the upper dust collecting unit, the plate and the substrate holding unit are both disposed so as to overlap the opening in a plan view.

5. the upper dust collecting unit has an exhaust duct on a lower surface thereof, the exhaust duct having an opening formed therein for passing the laser light irradiated from the laser irradiating unit; the substrate holding unit is configured to be movable to a processing position where a peripheral portion of the substrate held by the substrate holding unit is positioned directly under the laser irradiation unit; 2. The substrate processing apparatus of claim 1, wherein the length of the plate in a direction perpendicular to the movement direction of the substrate holding portion is greater than the diameter of the opening of the exhaust duct, and the length of the plate in the movement direction of the substrate holding portion is greater than the radius of the opening of the exhaust duct.

6. The upper dust collecting section is Exhaust duct and a sleeve provided on an upper surface of the exhaust duct and having a housing portion formed therein that houses at least a part of the laser irradiation unit; an opening is formed in a lower surface of the exhaust duct to allow the laser light irradiated from the laser irradiation unit to pass through; Inside the exhaust duct, an intake flow path that sucks in the atmosphere between the substrate and the opening; The substrate processing apparatus according to claim 1 , further comprising: an exhaust passage communicating with said intake passage and discharging said atmosphere.

7. The substrate processing apparatus according to claim 6 , wherein the upper dust collecting section sucks an atmosphere between the upper dust collecting section and the substrate and the plate to collect dust.

8. The substrate processing apparatus according to claim 6 , wherein the exhaust flow path is formed in a tangential direction of the substrate.

9. The substrate processing apparatus according to claim 6 , further comprising a discharge part provided on the sleeve for supplying gas to the intake passage.

10. The substrate processing apparatus according to claim 6 , further comprising a discharge part that supplies gas downward around the opening.

11. The substrate processing apparatus according to claim 6 , further comprising a discharge part provided in the exhaust duct for supplying gas along a side wall of the intake flow path.

12. The substrate processing apparatus according to claim 1 , wherein the laser irradiation unit irradiates the peripheral edge of the substrate with the laser light.

13. A substrate processing method for processing a substrate by irradiating the substrate with laser light using a substrate processing apparatus, comprising: The substrate processing apparatus includes: a substrate holder for holding the substrate; a laser irradiation unit that irradiates the laser light onto the substrate held by the substrate holding unit; a dust collecting unit that collects dust; a rotating unit that rotates the substrate holding unit, The dust collection unit is an upper dust collecting unit disposed above the substrate holding unit; a plate that moves relative to a lower portion of the upper dust collecting section, the height of the upper surface of the plate is the same as the height of the upper surface of the substrate held by the substrate holder; the plate is disposed adjacent to the outer periphery of the substrate holder; a gap is formed between the plate and the substrate holder; The substrate processing method includes: moving the substrate holder and the plate below the upper dust collecting unit; and collecting dust by sucking the atmosphere between the upper dust collection unit and the substrate and the plate with the upper dust collection unit while irradiating the substrate with the laser light from the laser irradiation unit.

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