Maintenance method for semiconductor manufacturing equipment

Abstract

According to an embodiment, a maintenance method for a semiconductor manufacturing apparatus comprises: separating, from a chamber having a first seal portion and a second seal portion, the first seal portion and the second seal portion; introducing atmosphere into the chamber via the separated first seal portion; and suctioning gas in the chamber via the separated second seal portion using a suction apparatus.

Description

[Technical Field]

[0001] The present invention relates to a maintenance method for semiconductor manufacturing equipment. [Background technology]

[0002] One method for forming high-quality semiconductor films is epitaxial growth, which involves growing a single-crystal film on a substrate by vapor phase growth. In a vapor phase growth apparatus using epitaxial growth, the substrate is placed on a holder in a chamber maintained at normal or reduced pressure.

[0003] Then, while the substrate is heated, a process gas containing the film raw material is supplied to the chamber, where thermal decomposition and chemical reaction of the process gas occurs on the substrate surface, forming an epitaxial single crystal film on the surface of the substrate.

[0004] After the growth of an epitaxial single crystal film, by-products remain inside the chamber. When performing maintenance on the inside of the chamber, the by-products react with the atmosphere, generating gases that may be released outside the chamber. If the gases generated by the by-products are harmful to humans or corrode components of surrounding production equipment, it is desirable to suppress the release of the gases outside the chamber. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2010-212430 Summary of the Invention [Problem to be solved by the invention]

[0006] The problem to be solved by the present invention is to provide a maintenance method for semiconductor manufacturing equipment that suppresses the release of gases originating from by-products remaining in the chamber to the outside of the equipment. [Means for solving the problem]

[0007] A maintenance method for semiconductor manufacturing equipment according to one aspect of the present invention includes: A chamber having an upper plate, a lower plate, a sidewall provided between the upper plate and the lower plate and including an upper wall and a lower wall provided between the upper wall and the lower plate, a first seal portion that seals between the upper plate and the sidewall, and a second seal portion that seals between the upper wall and the lower wall or between the lower wall and the lower plate, The first seal portion and the second seal portion each The air is introduced into the chamber through the separated first seal portion, and gas in the chamber is sucked in through the separated second seal portion using an intake device. [Effects of the Invention]

[0008] According to the present invention, it is possible to realize a maintenance method for semiconductor manufacturing equipment that suppresses the release of gases originating from by-products remaining in the chamber to the outside of the equipment. [Brief explanation of the drawings]

[0009] [Figure 1] 1 is a schematic cross-sectional view of a semiconductor manufacturing apparatus to be maintained in a maintenance method for a semiconductor manufacturing apparatus according to a first embodiment; [Figure 2] FIG. 2 is a bottom view of the top plate of the first embodiment. [Figure 3] FIG. 2 is a top view of the lower plate of the first embodiment. [Figure 4] FIG. 10 is a top view of a modified example of the lower plate of the first embodiment. [Figure 5] FIG. 1 is an explanatory diagram of a vapor phase growth method according to a first embodiment. [Figure 6] FIG. 10 is an explanatory diagram of by-products adhering to the inside of a chamber. [Figure 7] 3A to 3C are explanatory diagrams of a maintenance method for the semiconductor manufacturing apparatus according to the first embodiment. [Figure 8] 3A to 3C are explanatory diagrams of a maintenance method for the semiconductor manufacturing apparatus according to the first embodiment. [Figure 9] 3A to 3C are explanatory diagrams of a maintenance method for the semiconductor manufacturing apparatus according to the first embodiment. [Figure 10] 3A to 3C are explanatory diagrams of a maintenance method for the semiconductor manufacturing apparatus according to the first embodiment. [Figure 11] 10A and 10B are explanatory diagrams of a modification of the maintenance method for the semiconductor manufacturing apparatus according to the first embodiment. [Figure 12] FIG. 10 is an explanatory diagram of a maintenance method for a semiconductor manufacturing apparatus according to a second embodiment. [Figure 13] FIG. 10 is an explanatory diagram of a maintenance method for a semiconductor manufacturing apparatus according to a second embodiment. [Figure 14] FIG. 10 is an explanatory diagram of a maintenance method for a semiconductor manufacturing apparatus according to a second embodiment. [Figure 15] 10A to 10C are explanatory diagrams of a maintenance method for a semiconductor manufacturing apparatus according to a third embodiment. [Figure 16] 10A to 10C are explanatory diagrams of a maintenance method for a semiconductor manufacturing apparatus according to a fourth embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0010] Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

[0011] In this specification, the same or similar components may be denoted by the same reference numerals.

[0012] In this specification, the direction of gravity when the vapor deposition apparatus is set up so that a film can be formed is defined as "down," and the opposite direction is defined as "up." Therefore, "lower" means a position in the direction of gravity relative to a reference, and "lower" means the direction of gravity relative to a reference. "Upper" means a position in the opposite direction to the direction of gravity relative to a reference, and "upper" means the opposite direction to the direction of gravity relative to a reference. Furthermore, "vertical direction" means the direction of gravity.

[0013] In this specification, the term "process gas" is a general term for gases used to form a film, and is a concept that includes, for example, source gas, assist gas, dopant gas, carrier gas, and mixtures thereof.

[0014] (First embodiment) A first embodiment of a maintenance method for semiconductor manufacturing equipment involves separating the first seal portion and the second seal portion of a chamber having the first seal portion and the second seal portion, introducing air into the chamber through the separated first seal portion, and using an intake device to suck out gas from the chamber through the separated second seal portion.

[0015] 1 is a schematic cross-sectional view of a semiconductor manufacturing apparatus to be maintained in a maintenance method for semiconductor manufacturing apparatus according to a first embodiment. The semiconductor manufacturing apparatus according to the first embodiment is a vapor phase growth apparatus 100. The vapor phase growth apparatus 100 according to the first embodiment is, for example, a single-wafer type epitaxial growth apparatus that epitaxially grows a single-crystal silicon carbide film on a single-crystal silicon carbide substrate.

[0016] The vapor phase growth apparatus 100 of the first embodiment includes a chamber 10, a gas supply pipe 12, a supply valve 14, a gas exhaust pipe 16, an exhaust valve 18, a first vacuum pump 20, and a first abatement device 22. The chamber 10 includes an upper plate 24, a lower plate 26, a sidewall 28, a susceptor 30, a rotor 32, an upper heater 34, a lower heater 36, a hood 38, a liner 40, a gas supply port 42, a gas exhaust port 44, a service port 46, a blank flange 48, an upper insulation 50, and a lower insulation 52. The sidewall 28 includes an upper wall 28a and a lower wall 28b. The chamber 10 includes an upper seal portion 61, a middle seal portion 62, a lower seal portion 63, and a service port seal portion 64.

[0017] The chamber 10 is made of, for example, stainless steel. In the chamber 10, for example, a silicon carbide film is formed on a wafer W. The wafer W is an example of a substrate. The wafer W is, for example, a semiconductor wafer. The wafer W is, for example, a single-crystal silicon carbide wafer.

[0018] The chamber 10 includes a top plate 24 , a bottom plate 26 , and sidewalls 28 .

[0019] 2 is a bottom view of the upper plate of the first embodiment. The upper plate 24 is, for example, in the shape of a disk. The upper plate 24 has, for example, a flange 24a on its periphery.

[0020] An O-ring 55, for example, is provided on the outer periphery of the upper plate 24. Instead of the O-ring 55, a gasket may be provided.

[0021] The upper plate 24 is provided with a gas supply port 42 for supplying gas into the chamber 10. Although Figures 1 and 2 show an example in which there is one gas supply port 42, a plurality of gas supply ports 42 may be provided.

[0022] 3 is a top view of the lower plate of the first embodiment. The lower plate 26 is, for example, in the shape of a disk. The lower plate 26 has, for example, a flange 26a on its periphery.

[0023] An O-ring 55, for example, is provided on the outer periphery of the lower plate 26. Instead of the O-ring 55, a gasket may be provided.

[0024] The lower plate 26 is provided with a gas exhaust port 44 for exhausting gas from inside the chamber 10. The lower plate 26 also has a service port 46 for attaching additional measuring equipment, etc. The service port 46 is a hole provided in the lower plate 26.

[0025] The service port 46 is closed by a blank flange 48. Between the lower plate 26 and the blank flange 48, for example, an O-ring or a gasket (not shown) is provided.

[0026] 3, for example, four gas exhaust ports 44 are provided concentrically on the lower plate 26. In addition, for example, four service ports 46 are provided concentrically on the lower plate 26.

[0027] Fig. 4 is a top view of a modified example of the lower plate of the first embodiment. As shown in Fig. 4, lower plate 26 is provided with, for example, two gas exhaust ports 44. Lower plate 26 is also provided with, for example, two service ports 46. The number and arrangement of gas exhaust ports 44 and service ports 46 provided in lower plate 26 are not limited to those shown in Fig. 3 or 4.

[0028] The sidewall 28 is provided between the upper plate 24 and the lower plate 26. The sidewall 28 has, for example, a cylindrical shape.

[0029] The sidewall 28 includes an upper wall 28a and a lower wall 28b. The lower wall 28b is provided between the upper wall 28a and the lower plate 26.

[0030] The upper wall 28a has a flange 28ax and a flange 28ay. The flange 28ax of the upper wall 28a faces the flange 24a of the upper plate 24. An O-ring 55 or a gasket, for example, is provided between the flange 28ax and the flange 24a.

[0031] The lower wall 28b has a flange 28bx and a flange 28by. The flange 28bx of the lower wall 28b faces the flange 28ay of the upper wall 28a. An O-ring or a gasket (not shown), for example, is provided between the flanges 28bx and 28ay.

[0032] The flange 28by of the lower wall 28b faces the flange 26a of the lower plate 26. An O-ring 55 or a gasket, for example, is provided between the flange 28by and the flange 26a.

[0033] Chamber 10 includes an upper seal portion 61, an intermediate seal portion 62, a lower seal portion 63, and a service port seal portion 64. The upper seal portion 61, the intermediate seal portion 62, the lower seal portion 63, and the service port seal portion 64 maintain the airtightness of chamber 10. The upper seal portion 61, the intermediate seal portion 62, the lower seal portion 63, and the service port seal portion 64 make it possible to maintain a vacuum inside chamber 10.

[0034] The upper seal portion 61 is the portion where the flange 24a of the upper plate 24 faces the flange 28ax of the upper wall 28a. The middle seal portion 62 is the portion where the flange 28ay of the upper wall 28a faces the flange 28bx of the lower wall 28b. The lower seal portion 63 is the portion where the flange 28by of the lower wall 28b faces the flange 26a of the lower plate 26. The service port seal portion 64 is the portion between the lower plate 26 and the blank flange 48.

[0035] The upper seal portion 61 provides a seal between the upper plate 24 and the upper wall 28a. The upper seal portion 61 is separable in the vertical direction. In other words, the flange 24a of the upper plate 24 and the flange 28ax of the upper wall 28a are separable in the vertical direction.

[0036] For example, the upper plate 24 is moved upward relative to the upper wall 28a by a lifting mechanism (not shown), thereby making it possible to separate the upper seal portion 61 in the vertical direction.

[0037] The intermediate seal portion 62 provides a seal between the upper wall 28a and the lower wall 28b. The intermediate seal portion 62 is vertically separable. In other words, the flange 28ay of the upper wall 28a and the flange 28bx of the lower wall 28b are vertically separable.

[0038] For example, the upper wall 28a is moved upward relative to the lower wall 28b by a lifting mechanism (not shown), thereby separating the middle seal portion 62 in the vertical direction.

[0039] The lower seal portion 63 provides a seal between the lower wall 28b and the lower plate 26. The lower seal portion 63 is separable in the vertical direction. In other words, the flange 28by of the lower wall 28b and the flange 26a of the lower plate 26 are separable in the vertical direction.

[0040] For example, the lower wall 28b is moved upward by a lifting mechanism (not shown) relative to the lower plate 26. This allows the lower seal portion 63 to be separated in the vertical direction.

[0041] The service port seal 64 provides a seal between the lower plate 26 and the blank flange 48. The service port seal 64 is separable in the vertical direction. In other words, the lower plate 26 and the blank flange 48 are separable in the vertical direction. For example, the service port seal 64 can be separated in the vertical direction by removing the screws that attach the blank flange 48 to the lower plate 26.

[0042] A gas supply pipe 12 is connected to the gas supply port 42. A process gas is supplied from the gas supply pipe 12 through the gas supply port 42 into the chamber 10. A supply valve 14 is provided on the gas supply pipe 12 to control the supply of the process gas. Note that a plurality of supply valves 14 may be provided, one for each type of gas. The supply valve 14 may have any structure that can control the supply of gas to the chamber 10. In other words, the supply valve 14 also includes a three-way valve that can switch between supplying gas to the chamber 10 and supplying gas to a vent line (exhaust line) (not shown) using a single valve unit.

[0043] A gas exhaust pipe 16 is connected to the gas exhaust port 44. For example, unreacted process gas is exhausted as exhaust gas from the gas exhaust port 44 through the gas exhaust pipe 16. An exhaust valve 18 that controls the exhaust of gas is provided in the gas exhaust pipe 16. The exhaust valve 18 is provided with a stop valve that opens and closes a flow path from the chamber 10 to a first vacuum pump 20, which will be described later. In addition to the stop valve, the exhaust valve 18 may also be provided with a variable conductance valve (not shown) for controlling the amount of gas exhausted from the chamber 10 to the first vacuum pump 20, which will be described later.

[0044] A first vacuum pump 20 for reducing the pressure in the chamber 10 is provided in the gas exhaust pipe 16. Also connected to the gas exhaust pipe 16 is a first abatement device 22 for removing toxic substances in the exhaust gas.

[0045] The susceptor 30 is provided in the chamber 10. A wafer W can be placed on the susceptor 30.

[0046] The susceptor 30 is placed on top of a rotor 32. The rotor 32 is fixed to a rotation shaft (not shown).

[0047] The rotation shaft can be rotated by a rotation drive mechanism (not shown). Rotating the rotation shaft can rotate the susceptor 30. Rotating the susceptor 30 can rotate the wafer W placed on the susceptor 30.

[0048] The lower heater 36 is provided below the susceptor 30. The lower heater 36 is provided inside the rotating body 32. The lower heater 36 heats the wafer W held on the susceptor 30 from below.

[0049] The upper heater 34 is provided between the hood 38 and the sidewall 28. The upper heater 34 is located above the susceptor 30. The upper heater 34 heats the wafer W held on the susceptor 30 from above.

[0050] The hood 38 has, for example, a cylindrical shape. The hood 38 has, for example, a function of preventing the process gas from coming into contact with the upper heater 34. The hood 38 has, for example, a function of rectifying the flow of the process gas.

[0051] The liner 40 is provided between the rotor 32 and the lower heat insulating material 52. The liner 40 has, for example, a cylindrical shape. The liner 40 has, for example, a function of rectifying the flow of the process gas.

[0052] The upper insulation 50 is provided between the upper heater 34 and the sidewall 28. The lower insulation 52 is provided between the liner 40 and the sidewall 28.

[0053] Next, an example of a vapor phase growth method using the vapor phase growth apparatus 100 of the first embodiment will be described. Hereinafter, the case of forming a single crystal silicon carbide film doped with nitrogen as an n-type impurity on the surface of a single crystal silicon carbide wafer W will be described as an example.

[0054] FIG. 5 is an explanatory diagram of the vapor phase growth method of the first embodiment.

[0055] First, the wafer W is placed on the susceptor 30. The wafer W is a single-crystal silicon carbide wafer.

[0056] Next, the wafer W is rotated by a rotation drive mechanism (not shown), and is heated by the upper heater 34 and the lower heater 36.

[0057] Next, as shown in FIG. 5, the supply valve 14 is opened to supply the process gas from the gas supply pipe 12 into the chamber 10 .

[0058] The process gas is, for example, a mixed gas containing a silicon source gas, a carbon source gas, an n-type impurity dopant gas, an assist gas, and a carrier gas. The silicon source gas is, for example, silane gas (SiH4). The carbon source gas is, for example, propane gas (C3H8). The n-type impurity dopant gas is, for example, nitrogen gas (N2). The assist gas is, for example, hydrogen chloride gas (HCl). The carrier gas is, for example, argon gas (Ar) or hydrogen gas (H2).

[0059] For example, the wafer W is processed in an atmosphere containing chlorine, or in an atmosphere containing hydrogen chloride gas (HCl) as an assist gas.

[0060] A single-crystal silicon carbide film doped with nitrogen as an n-type impurity is formed on the surface of the wafer W by reaction of the process gas.

[0061] 5, exhaust valve 18 is opened, and exhaust gases such as unreacted process gases are exhausted from gas exhaust pipe 16 during the formation of the silicon carbide film. The exhaust gases are rendered harmless by first vacuum pump 20 and first detoxification device 22 and then exhausted.

[0062] After the single-crystal silicon carbide film is formed, the supply valves 14 are closed to stop the supply of process gas into the chamber 10. Heating by the upper heater 34 and the lower heater 36 is also stopped to lower the temperature of the wafer W. The wafer W is then unloaded from the chamber 10. If multiple supply valves 14 are provided for different gases, only the supply valves 14 corresponding to specific gases may be closed during the unloading of the wafer W from the chamber 10. For example, only the supply valves 14 for silane gas (SiH), propane gas (C3H8), nitrogen gas (N2), hydrogen chloride gas (HCl), and hydrogen gas (H2) may be closed, while the supply valve 14 for argon gas (Ar) may remain open. This allows the interior of the chamber 10 to be replaced with argon gas (Ar), reducing the risk of toxic gases flowing into a destination, such as a transfer chamber or load lock chamber, where the wafer W is being unloaded from the chamber 10.

[0063] FIG. 6 is an explanatory diagram of by-products adhering to the inside of the chamber.

[0064] 6, after the single-crystal silicon carbide film is formed, primary by-products 66 generated by the reaction of the process gas adhere to the inside of chamber 10. By-products 66 adhere to, for example, the surface of rotor 32, the surface of hood 38, the surface of liner 40, the surface of lower plate 26, and the surface of gas exhaust port 44.

[0065] The by-product 66 includes, for example, chlorine (Cl). The chlorine contained in the by-product 66 is derived from, for example, hydrogen chloride gas (HCl) which is the assist gas.

[0066] Next, a maintenance method for semiconductor manufacturing equipment according to the first embodiment will be described.

[0067] 7, 8, 9, and 10 are explanatory diagrams of the maintenance method for the semiconductor manufacturing equipment of the first embodiment.

[0068] For example, after a single-crystal silicon carbide film is formed and the wafer W is removed from the chamber 10, the upper seal portion 61 and the middle seal portion 62 are separated (FIG. 7). The upper seal portion 61 is an example of a first seal portion. The middle seal portion 62 is an example of a second seal portion.

[0069] For example, the upper plate 24 is moved upward relative to the upper wall 28a by a lifting mechanism (not shown), thereby separating the upper seal portion 61 in the vertical direction.

[0070] Also, for example, the upper wall 28a is moved upward relative to the lower wall 28b by a lifting mechanism (not shown), thereby separating the middle seal portion 62 in the vertical direction.

[0071] Next, the intake device 70 is attached to the separated intermediate seal portion 62 (FIG. 8).

[0072] The suction device 70 includes an annular jig 72, a gas suction pipe 74, a second abatement device 76, and a second vacuum pump 78. The annular jig 72 is sandwiched between the upper wall 28a and the lower wall 28b. The second abatement device 76 is simple and easy to use if it is an adsorption type, but is not limited to this. The second vacuum pump 78 may be provided in the suction device 70, or may be a vacuum line provided in a factory or the like.

[0073] 9 is a perspective view of the annular jig of the intake device of Embodiment 1. The annular jig 72 includes a first portion 72a, a second portion 72b, a locking mechanism 72c, a connecting pipe 72d, and an intake port 72e.

[0074] The first portion 72a and the second portion 72b are, for example, semicircular. The first portion 72a and the second portion 72b are joined together to form a ring shape. The first portion 72a and the second portion 72b are joined together using, for example, a locking mechanism 72c.

[0075] The first portion 72a and the second portion 72b are hollow. An intake port 72e is provided inside the first portion 72a and the second portion 72b. A gas intake pipe 74 is connected to the connecting pipe 72d.

[0076] A second detoxification device 76 that removes toxic substances from the gas taken in by the gas intake pipe 74 is connected to the gas intake pipe 74. A second vacuum pump 78 that reduces the pressure in the gas intake pipe 74 is also provided in the gas intake pipe 74. The second vacuum pump 78 may be provided in the intake device 70, or may be a vacuum line provided in a factory or the like.

[0077] Next, the second vacuum pump 78 is operated to set the pressure in the gas intake pipe 74 to a pressure lower than atmospheric pressure. Air flows into the chamber 10 from the separated upper seal portion 61. The air that has flowed into the chamber 10 is sucked in through the intake port 72e of the annular jig 72. The air sucked in through the intake port 72e passes through the hollow portions of the first portion 72a and the second portion 72b, and flows from the connecting pipe 72d to the gas intake pipe 74 (FIG. 10).

[0078] The by-products 66 adhering to the surfaces of the rotor 32, the hood 38, the liner 40, the lower plate 26, and the gas exhaust port 44 react with the atmosphere to form secondary by-products. The secondary by-products are, for example, by-product gases. The generated by-product gases flow into the gas intake pipe 74 together with the atmosphere.

[0079] After the gas inside the chamber 10 has been sucked for a predetermined time, the suction device 70 is removed from the intermediate seal portion 62. Then, the chamber 10 is completely opened, and maintenance work inside the chamber 10 is carried out.

[0080] For example, the upper plate 24 is completely separated from the upper wall 28a to perform maintenance work on the inside of the chamber 10. Also, for example, the upper wall 28a and the lower wall 28b are completely separated to perform maintenance work on the inside of the chamber 10. The parts to be completely separated are selected depending on the content of the maintenance work.

[0081] Next, the operation and effects of the maintenance method for semiconductor manufacturing equipment according to the first embodiment will be described.

[0082] After the single-crystal silicon carbide film is formed, primary by-products 66 generated by the reaction of the process gas adhere to the inside of chamber 10. The by-products 66 include, for example, chlorine (Cl) derived from hydrochloric acid gas (HCl) that is the assist gas.

[0083] During maintenance of the interior of the chamber 10 of the vapor phase growth apparatus 100, the byproducts 66 react with the atmosphere, forming secondary byproducts derived from the byproducts 66. The secondary byproducts are released, for example, as byproduct gases. The byproduct gases contain, for example, chlorine. The chlorine-containing byproduct gases are harmful to humans, for example. Furthermore, the chlorine-containing byproduct gases corrode components of the production equipment surrounding the vapor phase growth apparatus 100. In this case, if all of the chlorine-containing byproduct gases inside the chamber 10 are exhausted via the gas exhaust pipe 16, there is a risk that the reaction byproducts will adhere to the exhaust valve 18. If the exhaust valve 18 is a stop valve, the adhesion of the reaction byproducts is undesirable because it deteriorates the vacuum seal performance. Furthermore, if a variable conductance valve is provided, the adhesion of the reaction byproducts is undesirable because it deteriorates the controllability of the exhaust flow rate.

[0084] In the maintenance method for semiconductor manufacturing equipment of the first embodiment, before completely opening chamber 10, one of the seal portions of chamber 10 is separated and atmospheric air is introduced through the separated seal portion. Another of the seal portions of chamber 10 is separated and an air intake device 70 is attached. Then, by-product gas generated by the reaction between atmospheric air and by-product 66 is sucked in using air intake device 70.

[0085] Therefore, when the chamber 10 is completely opened, the by-product gas is prevented from being released outside the apparatus. This prevents the by-product gas from harming the human body. Furthermore, the by-product gas is prevented from corroding components of the production equipment around the vapor phase growth apparatus 100.

[0086] As the intake device 70, it is preferable to use an intake device 70 having an annular jig 72 that can be separated into a first part 72a and a second part 72b, as shown in Figure 9. By using the intake device 70 as described above, it becomes possible to attach and detach the intake device 70 without interference from structures inside the chamber 10. This improves the efficiency of maintenance work.

[0087] (Variation) The modified example of the maintenance method for semiconductor manufacturing equipment of the first embodiment differs from the maintenance method for semiconductor manufacturing equipment of the first embodiment in that the second seal portion seals between the lower wall and the lower plate.

[0088] FIG. 11 is an explanatory diagram of a modification of the maintenance method for semiconductor manufacturing equipment according to the first embodiment.

[0089] For example, after a single-crystal silicon carbide film is formed and the wafer W is removed from the chamber 10, the upper seal portion 61 and the lower seal portion 63 are separated. The upper seal portion 61 is an example of a first seal portion. The lower seal portion 63 is an example of a second seal portion.

[0090] For example, the upper plate 24 is moved upward relative to the upper wall 28a by a lifting mechanism (not shown), thereby separating the upper seal portion 61 in the vertical direction.

[0091] Also, for example, the lower wall 28b is moved upward by a lifting mechanism (not shown) relative to the lower plate 26. This separates the lower seal portion 63 in the vertical direction.

[0092] Next, the intake device 70 is attached to the separated lower seal portion 63.

[0093] The suction device 70 includes an annular jig 72, a gas suction pipe 74, a second abatement device 76, and a second vacuum pump 78. The annular jig 72 is sandwiched between the lower wall 28b and the lower plate 26.

[0094] Next, the second vacuum pump 78 is operated to set the pressure in the gas intake pipe 74 to a pressure lower than atmospheric pressure. Air flows into the chamber 10 from the separated upper seal portion 61. The air that has flowed into the chamber 10 is sucked in through the intake port 72e of the annular jig 72. The air sucked in through the intake port 72e passes through the hollow portions of the first portion 72a and the second portion 72b, and flows from the connecting pipe 72d to the gas intake pipe 74.

[0095] The by-products 66 adhering to the surfaces of the rotor 32, the hood 38, the liner 40, the lower plate 26, and the gas exhaust port 44 react with the atmosphere to form secondary by-products. The secondary by-products are, for example, by-product gases. The generated by-product gases flow into the gas intake pipe 74 together with the atmosphere.

[0096] After the gas inside the chamber 10 has been sucked for a predetermined time, the suction device 70 is removed from the lower seal portion 63. Then, the chamber 10 is completely opened, and maintenance work inside the chamber 10 is carried out.

[0097] As described above, according to the maintenance method for semiconductor manufacturing equipment of the first embodiment and the modified example, it is possible to suppress the release of gas originating from by-products remaining in the chamber to the outside of the equipment.

[0098] (Second embodiment) The maintenance method for semiconductor manufacturing equipment of the second embodiment differs from the maintenance method for semiconductor manufacturing equipment of the first embodiment in that the second seal unit seals between the lower plate and the blank flange. Hereinafter, some of the description overlapping with the first embodiment may be omitted.

[0099] 12, 13, and 14 are explanatory diagrams of a maintenance method for semiconductor manufacturing equipment according to the second embodiment.

[0100] For example, after a single-crystal silicon carbide film is formed and the wafer W is removed from the chamber 10, the upper seal portion 61 and the service port seal portion 64 are separated (FIG. 12). The upper seal portion 61 is an example of a first seal portion. The service port seal portion 64 is an example of a second seal portion.

[0101] For example, the upper plate 24 is moved upward relative to the upper wall 28a by a lifting mechanism (not shown), thereby separating the upper seal portion 61 in the vertical direction.

[0102] Additionally, for example, by removing the screws that attach the blank flange 48 to the lower plate 26, the service port seal portion 64 is separated in the vertical direction.

[0103] Next, the intake device 80 is attached to the separated service port seal portion 64 (FIG. 13). The intake device 80 is attached to the service port 46.

[0104] The suction device 80 includes a connecting jig 82, a gas suction pipe 74, a second abatement device 76, and a second vacuum pump 78. The connecting jig 82 is attached to the service port 46 of the lower plate 26. The connecting jig 82 is, for example, screwed to the lower plate 26. The gas suction pipe 74 is connected to the connecting jig 82.

[0105] A second abatement device 76 is connected to the gas intake pipe 74 to remove toxic substances from the gas taken in by the gas intake pipe 74. A second vacuum pump 78 is also provided to the gas intake pipe 74 to reduce the pressure in the gas intake pipe 74.

[0106] Next, the second vacuum pump 78 is operated to set the pressure in the gas intake pipe 74 to a pressure lower than atmospheric pressure. Air flows into the chamber 10 through the separated upper seal part 61. The air that has flowed into the chamber 10 is sucked in via the connecting jig 82. The air sucked in through the connecting jig 82 flows into the gas intake pipe 74 (FIG. 14).

[0107] The by-products 66 adhering to the surfaces of the rotor 32, the hood 38, the liner 40, the lower plate 26, and the gas exhaust port 44 react with the atmosphere to form secondary by-products. The secondary by-products are, for example, by-product gases. The generated by-product gases flow into the gas intake pipe 74 together with the atmosphere.

[0108] After the gas inside the chamber 10 has been sucked for a predetermined time, the suction device 80 is removed from the service port 46. Then, the chamber 10 is completely opened, and maintenance work inside the chamber 10 is carried out.

[0109] As described above, according to the maintenance method for semiconductor manufacturing equipment of the second embodiment, similarly to the first embodiment, it is possible to suppress the release of gas originating from by-products remaining in the chamber to the outside of the equipment.

[0110] (Third embodiment) The maintenance method for semiconductor manufacturing equipment of the third embodiment differs from the maintenance method for semiconductor manufacturing equipment of the second embodiment in that the first seal unit seals between the upper wall and the lower wall. Hereinafter, some description of content that overlaps with the first or second embodiment may be omitted.

[0111] FIG. 15 is an explanatory diagram of a maintenance method for semiconductor manufacturing equipment according to the third embodiment.

[0112] For example, after a single-crystal silicon carbide film is formed and the wafer W is removed from the chamber 10, the intermediate seal part 62 and the service port seal part 64 are separated. The intermediate seal part 62 is an example of a first seal part. The service port seal part 64 is an example of a second seal part.

[0113] For example, the upper wall 28a is moved upward relative to the lower wall 28b by a lifting mechanism (not shown), thereby separating the middle seal portion 62 in the vertical direction.

[0114] Additionally, for example, by removing the screws that attach the blank flange 48 to the lower plate 26, the service port seal portion 64 is separated in the vertical direction.

[0115] Next, the intake device 80 is attached to the separated service port seal portion 64.

[0116] Next, the second vacuum pump 78 is operated to set the pressure in the gas intake pipe 74 to a pressure lower than atmospheric pressure. Air flows into the chamber 10 from the separated middle seal part 62. The air that has flowed into the chamber 10 is sucked in via the connecting jig 82. The air sucked in from the connecting jig 82 flows into the gas intake pipe 74.

[0117] The by-products 66 adhering to the surfaces of the rotor 32, the hood 38, the liner 40, the lower plate 26, and the gas exhaust port 44 react with the atmosphere to form secondary by-products. The secondary by-products are, for example, by-product gases. The generated by-product gases flow into the gas intake pipe 74 together with the atmosphere.

[0118] After the gas inside the chamber 10 has been sucked for a predetermined time, the suction device 80 is removed from the service port 46. Then, the chamber 10 is completely opened, and maintenance work inside the chamber 10 is carried out.

[0119] As described above, according to the maintenance method for semiconductor manufacturing equipment of the third embodiment, similarly to the first and second embodiments, it is possible to suppress the release of gas originating from by-products remaining in the chamber to the outside of the equipment.

[0120] (Fourth embodiment) The semiconductor manufacturing equipment maintenance method of the fourth embodiment differs from the semiconductor manufacturing equipment maintenance method of the second embodiment in that the first seal unit seals between the lower plate and the blank flange. Hereinafter, some of the content that overlaps with the first to third embodiments may be omitted.

[0121] FIG. 16 is an explanatory diagram of a maintenance method for semiconductor manufacturing equipment according to the fourth embodiment.

[0122] For example, after a single-crystal silicon carbide film is formed and the wafer W is removed from the chamber 10, the service port seal 64 is separated. The service port seal 64 is an example of a first seal. The other service port seal 64 is an example of a second seal.

[0123] For example, by removing the screws that attach the blank flange 48 to the lower plate 26, the service port seal portion 64 is separated in the vertical direction.

[0124] Next, the intake device 80 is attached to at least one of the separated service port seal portions 64 .

[0125] A connecting jig 82 of the intake device 80 is attached to at least one of the service ports 46 of the lower plate 26. The gas intake pipe 74 is connected to the connecting jig 82.

[0126] Next, the second vacuum pump 78 is operated to set the pressure in the gas intake pipe 74 to a pressure lower than atmospheric pressure. Air flows into the chamber 10 from the service port 46, which is not equipped with an intake device 80. The air that has flowed into the chamber 10 is sucked in via the connecting jig 82. The air sucked in from the connecting jig 82 flows into the gas intake pipe 74.

[0127] The by-products 66 adhering to the surfaces of the rotor 32, the hood 38, the liner 40, the lower plate 26, and the gas exhaust port 44 react with the atmosphere to form secondary by-products. The secondary by-products are, for example, by-product gases. The generated by-product gases flow into the gas intake pipe 74 together with the atmosphere.

[0128] After the gas inside the chamber 10 has been sucked for a predetermined time, the suction device 80 is removed from the service port 46. Then, the chamber 10 is completely opened, and maintenance work inside the chamber 10 is carried out.

[0129] As described above, according to the maintenance method for semiconductor manufacturing equipment of the fourth embodiment, similarly to the first to third embodiments, it is possible to suppress the release of gas originating from by-products remaining in the chamber to the outside of the equipment.

[0130] The embodiments of the present invention have been described above with reference to specific examples. The above-described embodiments are merely examples and do not limit the present invention. Furthermore, the components of each embodiment may be combined as appropriate.

[0131] In the embodiment, the case of forming a single crystal silicon carbide film has been described as an example, but the present invention can also be applied to the formation of a polycrystalline or amorphous silicon carbide film.

[0132] Furthermore, in the embodiment, a single crystal silicon carbide wafer has been described as an example of the substrate, but the substrate is not limited to a single crystal silicon carbide wafer.

[0133] In addition, although the embodiments have been described using a vapor phase growth apparatus as an example of a semiconductor manufacturing apparatus, the semiconductor manufacturing apparatus is not limited to a vapor phase growth apparatus. For example, the present invention can be applied to any semiconductor manufacturing apparatus that includes a chamber and in which by-products remain inside the chamber after substrate processing.

[0134] In the embodiments, descriptions of the equipment configuration, manufacturing method, maintenance method, and other parts not directly necessary for explaining the present invention have been omitted, but the required equipment configuration, manufacturing method, maintenance method, and the like can be selected and used as appropriate. In addition, all maintenance methods for semiconductor manufacturing equipment that incorporate the elements of the present invention and that can be appropriately modified by those skilled in the art are encompassed within the scope of the present invention. The scope of the present invention is defined by the claims and their equivalents. [Explanation of symbols]

[0135] 10 Chambers 24 Upper Plate 26 Lower Plate 28 Sidewall 28a Upper Wall 28b Lower Wall 46 Service Port 48 Blank flange 61 Upper seal portion (first seal portion) 62 Intermediate seal portion (second seal portion, first seal portion) 63 Lower seal part (second seal part) 64 Service port seal part (second seal part, first seal part) 70 Intake system 72 Annular jig 72e Air intake 80 Intake system 100 Vapor phase growth equipment (semiconductor manufacturing equipment) W wafer (substrate)

Claims

1. An upper plate; A lower plate; a sidewall provided between the upper plate and the lower plate, the sidewall including an upper wall and a lower wall provided between the upper wall and the lower plate; a first seal portion that seals between the upper plate and the sidewall; a second seal portion that seals between the upper wall and the lower wall or between the lower wall and the lower plate; In a chamber having Separating the first seal portion and the second seal portion, introducing atmospheric air into the chamber through the separated first seal portion; A maintenance method for semiconductor manufacturing equipment, comprising: sucking gas from the chamber through the separated second seal portion using an intake device.

2. the intake device includes an annular jig having an intake port on its inner surface, 2. A maintenance method for semiconductor manufacturing equipment according to claim 1, wherein the annular jig is sandwiched between the upper wall and the lower wall or between the lower wall and the lower plate, and the gas is sucked in through the intake port.

3. An upper plate; A lower plate; a sidewall disposed between the upper plate and the lower plate; a blank flange that closes a service port provided in the lower plate; a first seal portion that seals between the upper plate and the sidewall; a second seal portion that seals between the lower plate and the blank flange; In a chamber having Separating the first seal portion and the second seal portion, introducing atmospheric air into the chamber through the separated first seal portion; A maintenance method for semiconductor manufacturing equipment, comprising: sucking gas from the chamber through the separated second seal portion using an intake device.

4. 2. The maintenance method for semiconductor manufacturing equipment according to claim 1, wherein the first seal and the second seal are separated after processing the substrate in an atmosphere containing chlorine in the chamber.

5. A maintenance method for semiconductor manufacturing equipment as described in claim 3, wherein after processing a substrate in an atmosphere containing chlorine in the chamber, the first sealing portion and the second sealing portion are separated.

Images