Semiconductor light-emitting device

Abstract

A semiconductor light-emitting device (1) is provided with a first sub-mount (10) and a semiconductor light-emitting chip (30). The semiconductor light-emitting chip (30) has a first surface (30a), an optical waveguide (WG) that extends in a first direction (D1) in parallel with the first surface (30a) and that is disposed closer to the first surface than to a second surface (30b), and an emission surface (30F) that emits emitted light. The first sub-mount (10) has a first base (19) having a third surface (19a) and a spacer (11) disposed on the third surface (19a). The semiconductor light-emitting chip (30) is joined to the first sub-mount (10) such that the first surface (30a) opposes the spacer (11). The emission surface (30F) is located frontward with respect to an end surface frontward of the spacer (11). A first front surface (19F) that is an end surface frontward of the first base (19) is located frontward of the emission surface (30F).

Description

[Technical Field]

[0001] The present disclosure relates to a semiconductor light emitting device and a light source device including the same. [Background technology]

[0002] The output of semiconductor light-emitting chips such as semiconductor laser diodes is becoming higher and higher. As the output of semiconductor light-emitting chips increases, the input power and the amount of heat generated also increase.

[0003] In a semiconductor light-emitting device in which a semiconductor light-emitting chip is mounted on a submount, a technology has been proposed to efficiently discharge the heat generated by the semiconductor light-emitting chip into the submount and dissipate it from the submount to the outside (see, for example, Patent Document 1 and Patent Document 2).

[0004] Patent Document 1 proposes a technology in which a block with high thermal conductivity is placed on the side of a semiconductor light-emitting chip, and heat generated in the semiconductor light-emitting chip is discharged from the side to a submount. Patent Documents 1 and 2 also propose a technology in which submounts are placed above and below a semiconductor light-emitting chip, and heat generated in the submounts is discharged in the vertical direction. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] International Publication No. 2015 / 024860 [Patent Document 2] International Publication No. 2013 / 128794 Summary of the Invention [Problem to be solved by the invention]

[0006] On the other hand, the surface from which emitted light such as laser light is emitted from the semiconductor light-emitting chip and its vicinity require a mechanism for suppressing obstruction of the optical path of the emitted light, as well as a mechanism for arranging and fixing an optical element coupled with the emitted light. Specifically, to suppress obstruction of the optical path and to arrange an optical element, nothing needs to be arranged on or near the emission surface. However, in this case, it becomes difficult to dissipate heat generated near the emission surface of the semiconductor light-emitting chip. Furthermore, when an optical element is arranged near the emission surface, it becomes difficult to increase the accuracy of the fixing position of the optical element. If the fixing position of the optical element is not accurate, the coupling efficiency of the emitted light from the semiconductor light-emitting chip with the optical element may decrease.

[0007] The object of the present disclosure is to provide a semiconductor light emitting device and a light source device that can efficiently couple the light emitted from a semiconductor light emitting chip with an optical element when the optical element is fixed, and can easily discharge heat generated by the semiconductor light emitting chip to the outside from the submount. [Means for solving the problem]

[0008] In order to solve the above-described problems, one aspect of a semiconductor light emitting device according to the present disclosure includes a first submount and a first semiconductor light emitting chip disposed on the first submount, the first semiconductor light emitting chip having a first surface, a second surface opposite to the first surface, a first optical waveguide extending in a first direction parallel to the first surface and disposed closer to the first surface than the second surface, and a first emission surface which is one of side surfaces connecting the first surface and the second surface and intersects with the first direction, and which emits emitted light in the first direction; The substrate has a first base having a third surface and a spacer arranged on the third surface, the first semiconductor light emitting chip is bonded to the first submount so that the first surface faces the spacer, the first emission surface is located forward along the traveling direction of the emitted light relative to one of the two end surfaces of the spacer in the first direction that is closer to the first emission surface, and a first front surface, which is one of the two end surfaces of the first base in the first direction that is closer to the first emission surface, is located forward along the traveling direction of the emitted light relative to the first emission surface.

[0009] In addition, in one aspect of the semiconductor light-emitting device according to the present disclosure, the distance in the first direction between the first front surface and the first emission surface may be 13 μm or more and 200 μm or less, and the thickness of the spacer may be 10 μm or more and 163 μm or less.

[0010] In addition, in one aspect of the semiconductor light emitting device according to the present disclosure, the first semiconductor light emitting chip may be a semiconductor laser chip or a superluminescent diode.

[0011] In one aspect of the semiconductor light-emitting device according to the present disclosure, the first base may include an insulating material. The first base may be made entirely of an insulating material, or may be made of a composite material in which an insulating material is formed on the surface of a conductive material.

[0012] In addition, in one aspect of the semiconductor light emitting device according to the present disclosure, the spacer may be a first metal material made of a metal material.

[0013] In addition, in one aspect of the semiconductor light-emitting device according to the present disclosure, the first semiconductor light-emitting chip may have a first electrode, the first electrode may have the first surface, and the first electrode and the spacer may be electrically connected.

[0014] In addition, in one aspect of the semiconductor light-emitting device according to the present disclosure, the first semiconductor light-emitting chip may have a second electrode, the second electrode having the second surface, the first submount having a second metal material arranged on the third surface, and the second electrode and the second metal material may be electrically connected.

[0015] Furthermore, one aspect of the semiconductor light emitting device according to the present disclosure may include a second submount disposed on the second surface.

[0016] In addition, in one aspect of the semiconductor light-emitting device according to the present disclosure, the second submount may have a second base having a fourth surface and a third metal material arranged on the fourth surface, and the second surface may face the third metal material.

[0017] Furthermore, in one aspect of the semiconductor light-emitting device according to the present disclosure, the end face of the third metal material in the first direction that is closer to the first emission surface may be located forward of the first emission surface along the direction in which the emitted light travels.

[0018] In addition, in one aspect of the semiconductor light-emitting device according to the present disclosure, the first semiconductor light-emitting chip may have a second electrode, the second electrode may have the second surface, and the second electrode and the third metal material may be electrically connected.

[0019] Furthermore, one aspect of the semiconductor light emitting device according to the present disclosure may include a first side wall and a second side wall connected to the second submount, the first side wall and the second side wall being parallel to the first surface and arranged in a second direction perpendicular to the first direction, and the first semiconductor light emitting chip being arranged between the first side wall and the second side wall.

[0020] In one aspect of the semiconductor light emitting device according to the present disclosure, the first sidewall may include a first metal pillar, and the second sidewall may include a second metal pillar.

[0021] In addition, in one aspect of the semiconductor light-emitting device according to the present disclosure, the first submount may have a second metal material disposed on the third surface, and the first metal pillar may be electrically connected to the second metal material.

[0022] In addition, in one aspect of the semiconductor light emitting device according to the present disclosure, the first metal pillar may be electrically connected to the third metal material.

[0023] In the semiconductor light emitting device according to the aspect of the present disclosure, the second metal material and the second electrode may be electrically connected.

[0024] In addition, in one aspect of the semiconductor light-emitting device according to the present disclosure, the second submount may have a fourth metal material disposed on the fourth surface, and the second metal pillar may be electrically connected to the fourth metal material.

[0025] In the semiconductor light emitting device according to the aspect of the present disclosure, the second metal pillar may be electrically connected to the spacer.

[0026] In addition, in one aspect of the semiconductor light-emitting device according to the present disclosure, the first semiconductor light-emitting chip may have a first electrode, the second base may have a fifth surface opposite to the fourth surface, the second submount may have a fifth metal material arranged on the fifth surface, and the first electrode may be electrically connected to the fifth metal material.

[0027] In addition, in one aspect of the semiconductor light-emitting device according to the present disclosure, the second submount may have a sixth metal material disposed on the fifth surface, and the second electrode may be electrically connected to the sixth metal material.

[0028] Furthermore, one aspect of the semiconductor light emitting device according to the present disclosure may include an optical element connected to the first submount and the second submount.

[0029] In addition, in one aspect of the semiconductor light emitting device according to the present disclosure, a second front surface, which is the end surface closer to the first emission surface of the two end surfaces of the second base in the first direction, may be located forward of the first emission surface along the traveling direction of the emitted light.

[0030] In one aspect of the semiconductor light emitting device according to the present disclosure, the first front surface and the second front surface may be in the same plane.

[0031] Furthermore, in one aspect of the semiconductor light-emitting device according to the present disclosure, the first semiconductor light-emitting chip may have a third rear surface facing away from the first emission surface, the first base may have a first rear surface, the second base may have a second rear surface, the first rear surface being the end surface of the first base's two end surfaces in the first direction that is closer to the third rear surface, the second rear surface being the end surface of the second base's two end surfaces in the first direction that is closer to the third rear surface, the third rear surface may be located forward of the first rear surface along the direction of travel of the emitted light, and the third rear surface may be located forward of the second rear surface along the direction of travel of the emitted light.

[0032] Furthermore, one aspect of the semiconductor light emitting device according to the present disclosure may include a light-transmitting member arranged on the first front surface and the second front surface, a first side wall and a second side wall arranged in a second direction parallel to the first surface and perpendicular to the first direction, and a third side wall, wherein the first base has a first rear surface facing away from the first front surface, the second base has a second rear surface facing away from the second front surface, the third side wall is arranged between the first rear surface and the second rear surface, the first semiconductor light emitting chip is arranged between the first side wall and the second side wall, and the first semiconductor light emitting chip is hermetically sealed by the first submount, the second submount, the light-transmitting member, the first side wall, the second side wall, and the third side wall.

[0033] In addition, in one aspect of the semiconductor light-emitting device according to the present disclosure, in a top view of the third surface, the spacer and the second metal material may protrude from the second submount in a second direction parallel to the first surface and perpendicular to the first direction.

[0034] Furthermore, one aspect of the semiconductor light emitting device according to the present disclosure may include a functional element disposed on the fifth surface, the functional element being electrically connected to the fifth metal material and the sixth metal material.

[0035] Furthermore, one aspect of the semiconductor light emitting device according to the present disclosure may include a second semiconductor light emitting chip disposed on the first submount, the second semiconductor light emitting chip having a sixth surface parallel to the first direction, a seventh surface opposite the sixth surface, and a second optical waveguide extending in the first direction and disposed closer to the sixth surface than the seventh surface, the first submount having a seventh metal material disposed on the third surface, the spacer and the seventh metal material being electrically insulated, the second semiconductor light emitting chip being bonded to the first submount so that the sixth surface faces the seventh metal material, the second submount having a fourth metal material disposed on the fourth surface, the seventh surface being connected to the fourth metal material, and the sixth surface being electrically connected to the seventh metal material.

[0036] Furthermore, in one aspect of the semiconductor light-emitting device according to the present disclosure, the second semiconductor light-emitting chip has a second emission surface, which is the end surface of the second semiconductor light-emitting chip that is closer to the first emission surface, the second base has a second front surface, which is the end surface of the second base that is closer to the first emission surface, of the two end surfaces of the second base in the first direction, the second emission surface is located forward along the direction of travel of the emitted light relative to the end surface of the seventh metal material that is closer to the second emission surface, and the end surface of the fourth metal material that is closer to the second emission surface, of the two end surfaces of the fourth metal material in the first direction, is located forward along the direction of travel of the emitted light relative to the second emission surface and is located rearward along the direction of travel of the emitted light relative to the second front surface.

[0037] Furthermore, one embodiment of the semiconductor light-emitting device according to the present disclosure may include a functional element arranged on the fourth surface, the second submount having an eighth metal material and a ninth metal material arranged on the fourth surface and electrically insulated from the third metal material and the fourth metal material, and the functional element may be electrically connected to the eighth metal material and the ninth metal material.

[0038] In addition, in one aspect of the semiconductor light-emitting device according to the present disclosure, the spacer may have, when viewed from above on the third surface, a first recess recessed inward of the spacer at one of the two edges of the spacer in the first direction that is closer to the first emission surface.

[0039] In addition, in one aspect of the semiconductor light-emitting device according to the present disclosure, the second metal material may have, when viewed from above on the third surface, a second recess recessed inward into the second metal material at one of the two edges of the second metal material in the first direction that is closer to the first emission surface.

[0040] Furthermore, one aspect of the semiconductor light emitting device according to the present disclosure may further include an auxiliary plate joined to the first submount.

[0041] In addition, in order to solve the above problem, one aspect of the light source device according to the present disclosure comprises the above semiconductor light emitting device and a lens optical element, wherein the lens optical element is positioned forward of the first submount along the direction of travel of the emitted light and is connected to the first submount.

[0042] Furthermore, one aspect of the light source device according to the present disclosure may include a second submount disposed on the second surface, and the lens optical element may be connected to the second submount.

[0043] Furthermore, one aspect of the light source device according to the present disclosure may include the semiconductor light emitting device and a lens optical element, wherein the spacer has, in a top view of the third surface, a first recess recessed inward of the spacer at one of the two edges of the spacer in the first direction that is closer to the first emission surface, and the lens optical element may be connected to the first recess and the second recess. [Effects of the Invention]

[0044] According to the present disclosure, it is possible to provide a semiconductor light emitting device and a light source device that can efficiently couple the light emitted from the semiconductor light emitting chip with the optical element when the optical element is fixed, and can easily discharge the heat generated by the semiconductor light emitting chip to the outside from the submount. [Brief explanation of the drawings]

[0045] [Figure 1] FIG. 1 is a schematic perspective view of a semiconductor light emitting device according to the first embodiment. [Figure 2] FIG. 2 is a schematic cross-sectional view of the semiconductor light emitting device according to the first embodiment. [Figure 3] FIG. 3 is a schematic cross-sectional view showing the configuration of a semiconductor light emitting device and a light source device according to a first modification of the first embodiment. [Figure 4A] FIG. 4A is a schematic view illustrating a first step of a method for manufacturing a first submount, a bonding preliminary film, and a bonding material according to Modification 1 of Embodiment 1. FIG. [Figure 4B] FIG. 4B is a schematic view illustrating a second step of the method for manufacturing the first submount, the preliminary bonding film, and the bonding material according to the first modification of the first embodiment. [Figure 4C] FIG. 4C is a schematic view illustrating a third step of the method for manufacturing the first submount, the preliminary bonding film, and the bonding material according to the first modification of the first embodiment. [Figure 4D] FIG. 4D is a schematic view illustrating a fourth step of the method for manufacturing the first submount, the preliminary bonding film, and the bonding material according to the first modification of the first embodiment. [Figure 5]FIG. 5 is a schematic diagram illustrating a process of attaching a lens optical element to the first submount according to the first modification of the first embodiment. [Figure 6] FIG. 6 is a schematic perspective view showing the overall configuration of a semiconductor light emitting device according to the second embodiment. [Figure 7] FIG. 7 is a first cross-sectional view schematically illustrating the overall configuration of a semiconductor light-emitting device according to the second embodiment. [Figure 8] FIG. 8 is a second cross-sectional view schematically illustrating the overall configuration of the semiconductor light-emitting device according to the second embodiment. [Figure 9] FIG. 9 is an exploded perspective view of the semiconductor light emitting device according to the second embodiment. [Figure 10A] FIG. 10A is a schematic perspective view showing the configuration of a second submount and a member connected to the second submount according to the second embodiment. [Figure 10B] FIG. 10B is a schematic perspective view illustrating the configuration of the semiconductor light-emitting chip according to the second embodiment. [Figure 11A] FIG. 11A is a schematic cross-sectional view showing a first step of a method for manufacturing a semiconductor light emitting device according to the second embodiment. [Figure 11B] FIG. 11B is a schematic cross-sectional view showing a second step of the method for manufacturing the semiconductor light emitting device according to the second embodiment. [Figure 11C] FIG. 11C is a schematic cross-sectional view showing a third step of the method for manufacturing the semiconductor light emitting device according to the second embodiment. [Figure 11D] FIG. 11D is a schematic cross-sectional view showing a fourth step of the method for manufacturing the semiconductor light emitting device according to the second embodiment. [Figure 12] FIG. 12 is a schematic cross-sectional view showing the positional relationship between components of the semiconductor light emitting device according to the second embodiment. [Figure 13] FIG. 13 is a first cross-sectional view illustrating a heat dissipation path of the semiconductor light emitting device according to the second embodiment. [Figure 14] FIG. 14 is a second cross-sectional view illustrating a heat dissipation path of the semiconductor light emitting device according to the second embodiment. [Figure 15]FIG. 15 is a schematic perspective view of a semiconductor light emitting device according to a first modification of the second embodiment. [Figure 16] FIG. 16 is a schematic cross-sectional view of a semiconductor light emitting device according to a first modification of the second embodiment. [Figure 17] FIG. 17 is a schematic perspective view illustrating a method for manufacturing a semiconductor light emitting device according to the first modification of the second embodiment. [Figure 18] FIG. 18 is a schematic perspective view showing the overall configuration of a semiconductor light emitting device according to Modification 2 of Embodiment 2. As shown in FIG. [Figure 19A] FIG. 19A is a schematic cross-sectional view showing the overall configuration of a semiconductor light-emitting device according to Modification 3 of Embodiment 2. FIG. [Figure 19B] FIG. 19B is a schematic cross-sectional view of a semiconductor light emitting device according to Modification 3 of Embodiment 2. As shown in FIG. [Figure 20] FIG. 20 is a schematic cross-sectional view showing the overall configuration of a semiconductor light emitting device according to a fourth modification of the second embodiment. [Figure 21] FIG. 21 is a schematic perspective view showing the overall configuration of a light source device according to Modification 5 of Embodiment 2. As shown in FIG. [Figure 22] FIG. 22 is a schematic partial cross-sectional view showing a configuration in the vicinity of a semiconductor light emitting device in a light source device according to Modification 5 of Embodiment 2. As shown in FIG. [Figure 23A] FIG. 23A is a perspective view illustrating a first step of a method for manufacturing a light source device according to Modification 5 of Embodiment 2. FIG. [Figure 23B] FIG. 23B is a perspective view illustrating a second step of the method for manufacturing the light source device according to the fifth modification of the second embodiment. [Figure 24] FIG. 24 is a perspective view showing the overall configuration of a semiconductor light emitting device according to the third embodiment. [Figure 25] FIG. 25 is a cross-sectional view showing the overall configuration of a semiconductor light-emitting device according to the third embodiment. [Figure 26] FIG. 26 is a schematic perspective view showing the overall configuration of a light source device according to Modification 1 of Embodiment 3. As shown in FIG. [Figure 27]FIG. 27 is a perspective view showing a configuration of a semiconductor light emitting device according to a first modification of the third embodiment. [Figure 28] FIG. 28 is an exploded perspective view showing a method for manufacturing a semiconductor light emitting device according to the first modification of the third embodiment. [Figure 29] FIG. 29 is a schematic perspective view showing a configuration in the vicinity of the semiconductor light emitting device of the light source device according to the first modification of the third embodiment. [Figure 30A] FIG. 30A is a schematic perspective view showing a first step of a method for manufacturing a light source device according to Modification 1 of Embodiment 3. FIG. [Figure 30B] FIG. 30B is a schematic perspective view showing a second step of the method for manufacturing the light source device according to the first modification of the third embodiment. [Figure 30C] FIG. 30C is a schematic perspective view showing a third step of the method for manufacturing the light source device according to the first modification of the third embodiment. [Figure 31] FIG. 31 is a schematic perspective view showing the overall configuration of a semiconductor light emitting device according to Modification 2 of Embodiment 3. As shown in FIG. [Figure 32] FIG. 32 is a schematic exploded perspective view showing the overall configuration of a semiconductor light emitting device according to Modification 2 of Embodiment 3. As shown in FIG. [Figure 33] FIG. 33 is a schematic exploded perspective view of a light source device according to Modification 2 of Embodiment 3. As shown in FIG. [Figure 34] FIG. 34 is a schematic perspective view of a light source device according to Modification 2 of Embodiment 3. As shown in FIG. [Figure 35] FIG. 35 is a schematic perspective view showing the overall configuration of a semiconductor light emitting device according to the fourth embodiment. [Figure 36] FIG. 36 is a schematic cross-sectional view showing the overall configuration of a semiconductor light-emitting device according to the fourth embodiment. [Figure 37] FIG. 37 is a schematic perspective view showing the overall configuration of a light source device according to the fourth embodiment. [Figure 38] FIG. 38 is a schematic enlarged perspective view showing the configuration of the vicinity of the semiconductor light emitting device included in the light source device according to the fourth embodiment. [Figure 39]FIG. 39 is a schematic partial cross-sectional view showing the configuration in the vicinity of the semiconductor light emitting device of the light source device according to the fifth embodiment. [Figure 40A] FIG. 40A is a schematic exploded perspective view illustrating a method for manufacturing a semiconductor light-emitting device according to the fifth embodiment. [Figure 40B] FIG. 40B is a schematic perspective view showing the configuration of the second submount and the member connected to the second submount according to the fifth embodiment. [Figure 41] FIG. 41 is a schematic perspective view showing the configuration of a light source device according to the fifth embodiment. [Figure 42A] FIG. 42A is a schematic cross-sectional view showing the overall configuration of a semiconductor light-emitting device according to the sixth embodiment. [Figure 42B] FIG. 42B is an equivalent circuit of the semiconductor light emitting device according to the sixth embodiment. [Figure 43A] FIG. 43A is a schematic cross-sectional view showing the overall configuration of a semiconductor light-emitting device according to the seventh embodiment. [Figure 43B] FIG. 43B is an equivalent circuit of the semiconductor light emitting device according to the seventh embodiment. [Figure 44] FIG. 44 is a schematic cross-sectional view showing the overall configuration of a semiconductor light-emitting device according to the eighth embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0046] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. Note that each of the embodiments described below represents a specific example of the present disclosure. Therefore, the numerical values, shapes, materials, components, and the arrangement and connection of the components shown in the following embodiments are merely examples and are not intended to limit the present disclosure.

[0047] Furthermore, each figure is a schematic diagram and is not necessarily an exact representation. Therefore, the scales and the like do not necessarily match in each figure. In each figure, the same reference numerals are used to denote substantially the same components, and redundant explanations will be omitted or simplified.

[0048] In addition, in this specification, the terms "upper" and "lower" refer to absolute spatial perception. Lead Directly above Hotoo Yo lead Directly below How to It does not refer to a specific position, but is used as a term that defines a relative positional relationship based on the stacking order in the stacking configuration. Furthermore, the terms "above" and "below" are applicable not only to the case where two components are arranged with a gap between them and another component exists between them, but also to the case where two components are arranged in contact with each other.

[0049] (Embodiment 1) A semiconductor light emitting device according to a first embodiment will be described.

[0050] [Overall configuration] First, the overall configuration of a semiconductor light emitting device according to the present embodiment will be described with reference to Figures 1 and 2. Figures 1 and 2 are a schematic perspective view and a cross-sectional view, respectively, of a semiconductor light emitting device 1 according to the present embodiment. Figure 2 is a cross-sectional view taken along line II-II in Figure 1.

[0051] 1, the semiconductor light emitting device 1 includes a semiconductor light emitting chip 30 and a first submount 10. In this embodiment, the semiconductor light emitting device 1 further includes a plurality of metal wires 91.

[0052] The semiconductor light-emitting chip 30 is an example of a first semiconductor light-emitting chip mounted on the first submount 10. In this embodiment, the semiconductor light-emitting chip 30 is a semiconductor laser diode chip having a first electrode 31, a second electrode 32, and a stack 39, as shown in FIG. 2, and is mounted on the first submount 10. The semiconductor light-emitting chip 30 is mounted in the center of the first submount 10. The stack 39 includes a substrate and a semiconductor stack including a light-emitting layer. The substrate may be made of, for example, InP, GaAs, GaN, or AlN. In this embodiment, the substrate is an n-type semiconductor substrate. The semiconductor stack includes, for example, an n-type cladding layer, an n-side guide layer, a quantum well active layer, a p-side guide layer, and a p-type cladding layer, which are stacked in this order on the substrate. A first electrode 31 is disposed on the principal surface of the stack 39 facing the semiconductor stack, and a second electrode 32 is disposed on the principal surface facing the substrate. The semiconductor light-emitting chip 30 is bonded to the first submount 10 at the first electrode 31 disposed in the semiconductor laminate. That is, the semiconductor light-emitting chip 30 is junction-down bonded to the first submount 10. In this embodiment, the first electrode 31 is thermally and electrically connected to the spacer 11 of the first submount 10.

[0053] The semiconductor light emitting chip 30 has a first surface 30a, a second surface 30b, an emission surface 30F, and a rear surface 30R. The first surface 30a is a portion of the surface of the semiconductor light emitting chip 30 that faces the first submount 10. In this embodiment, the first electrode 31 has the first surface 30a. That is, the semiconductor stack of the semiconductor light emitting chip 30 is disposed on the first surface 30a side of the semiconductor light emitting chip 30 with respect to the substrate. The second surface 30b is the surface opposite to the first surface 30a. In this embodiment, the second electrode 32 has the second surface 30b.

[0054] The semiconductor light-emitting chip 30 also has an optical waveguide WG extending in a first direction D1 parallel to the first surface 30a. The optical waveguide WG is disposed closer to the first surface 30a than the second surface 30b. The optical waveguide WG is an example of a first optical waveguide. Specifically, the semiconductor laminate portion of the laminate 39 of the semiconductor light-emitting chip 30 has, for example, an optical confinement structure formed of a ridge extending in the first direction D1 in the p-type cladding layer. This results in the optical waveguide WG having an optical confinement structure in the second direction D2. The optical waveguide WG is disposed on the first surface 30a side of the semiconductor light-emitting chip 30 relative to the substrate. The optical waveguide WG is formed, for example, at the center of the semiconductor laminate portion in the second direction D2. Here, the second direction D2 is parallel to the first surface 30a and perpendicular to the first direction D1.

[0055] The emission surface 30F is one of the side surfaces connecting the first surface 30a and the second surface 30b that intersects with the first direction D1 and is an example of a first emission surface that emits emission light in the first direction D1. In this embodiment, the emission light is emitted from a position of the emission surface 30F that corresponds to the optical waveguide WG. The emission light is, for example, ultraviolet light, visible light, or infrared laser light having a peak wavelength between 250 nm and 20 μm. The rear surface 30R is an example of a third rear surface that is the other of the side surfaces connecting the first surface 30a and the second surface 30b that intersects with the first direction D1. In other words, the rear surface 30R is a side surface facing away from the emission surface 30F of the semiconductor light-emitting chip 30. In this embodiment, the emission surface 30F and the rear surface 30R form a laser resonator, and the laser light resonates in the optical waveguide WG. A point on the light exit surface 30F corresponding to the optical waveguide WG, that is, a point from which the emitted light is emitted, is referred to as a light emitting point 30e.

[0056] The first submount 10 is a base on which the semiconductor light-emitting chip 30 is placed. The first submount 10 also functions as a heat sink that dissipates heat generated by the semiconductor light-emitting chip 30. In this embodiment, as shown in FIG. 1, the first submount 10 has a first base 19, a spacer 11, a second metal material 12, and a bonding material 18. Furthermore, as shown in FIG. 2, the first submount 10 further has a backside metal material 17.

[0057] The first base 19 is a main component of the first submount 10. The first base 19 has a third surface 19a, on which the spacer 11 and the second metal material 12 are disposed. In this embodiment, the first base 19 is an example of a first insulating material. The first base 19 may be, for example, a ceramic substrate, a polycrystalline substrate, or a single-crystal substrate made of a material with high thermal conductivity, such as alumina, AlN, SiC, or diamond. The first base 19 may also be a composite material composed of a conductive material and an insulating material formed on the third surface 19a. The first base 19 may be, for example, a silicon substrate with an oxide film formed on its surface. In this manner, the first base 19 may include an insulating material. The first base 19 has a back surface 19b opposite the third surface 19a, on which the back metal material 17 is disposed.

[0058] The spacer 11 is an example of a first metal material disposed on the third surface 19a. The spacer 11 is disposed at least between the third surface 19a of the first base 19 and the first surface 30a of the semiconductor light-emitting chip 30. The spacer 11 covers at least a central portion of the third surface 19a. In this embodiment, the spacer 11 is electrically connected to the first surface 30a of the semiconductor light-emitting chip 30 via the bonding material 18. In this manner, the semiconductor light-emitting chip 30 is junction-down bonded to the first submount 10 so that the first surface 30a faces the spacer 11. The spacer 11 is, for example, a plate-shaped metal material mainly composed of a metal with high thermal conductivity such as Cu, with a protective metal film such as Ni or Au formed on its surface.

[0059] The second metal material 12 is a metal material disposed on the third surface 19a. The second metal material 12 is electrically insulated from the spacer 11 and electrically connected to the second electrode 32 of the semiconductor light-emitting chip 30. In this embodiment, the second metal material 12 and the second electrode 32 are electrically connected via a metal wire 91. As shown in FIG. 1 , the second metal material 12 is disposed apart from the spacer 11 in the second direction D2. The second metal material 12 is, for example, a plate-shaped metal material mainly composed of a metal with high thermal conductivity such as Cu, with a protective metal film such as Ni or Au formed on the surface.

[0060] The bonding material 18 is a metal material that bonds the spacer 11 and the semiconductor light emitting chip 30. The bonding material 18 is disposed on the surface of the spacer 11 that faces the semiconductor light emitting chip 30. The bonding material 18 is made of, for example, AuSn.

[0061] The back-side metal material 17 is a metal material disposed on the back-side surface 19b of the first base 19. The back-side metal material 17 is a plate-shaped metal material mainly composed of a metal with high thermal conductivity such as Cu, with a protective metal film of Ni, Au, or the like formed on the surface. The back-side metal material 17 is connected to a heat dissipation member such as a heat sink.

[0062] The metal wire 91 is a metal wire that connects the second electrode 32 of the semiconductor light-emitting chip 30 and the second metal material 12 of the first submount 10. The metal wire 91 is made of, for example, Au.

[0063] The semiconductor light emitting device 1 includes the above-described components, and the spacer 11 and the second metal material 12 are each connected to external wiring by a metal wire (not shown), etc. This allows power to be supplied to the semiconductor light emitting device 1 from the outside.

[0064] [Positional relationship between components] Next, the positional relationship between the emission surface 30F of the semiconductor light-emitting chip 30 of the semiconductor light-emitting device 1, the end surface 11F (i.e., the side surface on the left in FIG. 2) of the spacer 11 of the first submount 10, and the first front surface 19F (i.e., the side surface on the left in FIG. 2) of the first base 19 will be described with reference to FIG. 2. Here, the first front surface 19F is the end surface closer to the emission surface 30F of the two end surfaces of the first base 19 in the first direction D1.

[0065] End surface 11F of spacer 11 is an end surface located near emission surface 30F of spacer 11. In other words, end surface 11F of spacer 11 is the end surface closer to emission surface 30F of the two end surfaces of spacer 11 in first direction D1.

[0066] The first front surface 19F is an end surface located near the emission surface 30F of the first base 19. In other words, the first front surface 19F is the end surface closer to the emission surface 30F of the two end surfaces of the first base 19 in the first direction D1.

[0067] The end face 11F and the first front face 19F of the spacer 11 are end faces on the side of the traveling direction of the emitted light, and may be described as end faces on the side of the emitted light. When the end face 11F and the first front face 19F are arranged closer to the rear face 30R than the emission face 30F in the first direction D1 based on the emission face 30F of the semiconductor light-emitting chip 30, they are expressed as being arranged rearward of the emission face 30F (along the traveling direction of the emitted light). When the end face 11F and the first front face 19F are arranged closer to the rear face 30R than the emission face 30F in the traveling direction of the emitted light, they are expressed as being arranged forward of the emission face 30F (along the traveling direction of the emitted light). When the end face 11F of the spacer 11 is arranged closer to the rear face 30R than the end face 11F in the first direction D1 based on the emission face 30F, they are expressed as being arranged rearward of the end face 11F along the traveling direction of the emitted light. When exit surface 30F and first front surface 19F are disposed closer to rear surface 30R than first front surface 19F in the first direction D1 when first front surface 19F is used as a reference, they are expressed as being disposed forward of end surface 11F along the direction of travel of the emitted light. Furthermore, when exit surface 30F and end surface 11F are disposed closer to rear surface 30R than first front surface 19F in the first direction D1 when first front surface 19F is used as a reference, they are expressed as being disposed rearward of first front surface 19F along the direction of travel of the emitted light. When exit surface 30F and end surface 11F are disposed closer to the direction of travel of the emitted light than first front surface 19F, they are expressed as being disposed forward of first front surface 19F along the direction of travel of the emitted light. In either case, when simply referring to being disposed forward or rearward of a reference surface, it means being disposed forward or rearward of the reference surface along the direction of travel of the emitted light.

[0068] Furthermore, the distance between the rear surface 30R and the first rear surface 19R, which is the rear end surface of the first base 19, is longer than the distance between the emission surface 30F and the first front surface 19F.

[0069] The positional relationship between the components is determined to increase the utilization efficiency of the emitted light. For example, when the emitted light is a laser beam and is used for material processing, high-power light is required, so it is necessary to guide the emitted light to the target with as high utilization efficiency as possible. Therefore, it is necessary to avoid placing opaque objects in the optical path of the emitted light, which can cause loss of the emitted light.

[0070] The light emitted from the semiconductor light emitting device 1 has a distribution of light intensity with respect to the angle with respect to the optical axis Ax, which is perpendicular to the light emitting surface 30F, i.e., the output angle. The light intensity is approximately greatest near the optical axis, and has a Gaussian distribution with respect to the output angle. As shown in FIG. 2, the divergence angle (full angle) of the light emitted from the semiconductor light emitting device 1 in the fast axis direction (i.e., the vertical direction in FIG. 2) is defined as 2θf. The divergence angle 2θf is defined as the light beam from the lower outermost ray (the ray indicated by the dashed line Lb below the optical axis Ax in FIG. 2) to the upper outermost ray (the ray indicated by the dashed line Lb above the optical axis Ax in FIG. 2) having an intensity less than 1% of the peak light intensity of the emitted light. In a high-power semiconductor laser diode, the divergence angle 2θf is defined as 1 / e of the peak intensity. 2 The corresponding divergence angle in the fast axis direction is in the range of 40° to 50°. In this case, the divergence angle of the outermost ray is in the range of 62° (corresponding to NA 0.52) to 76° (corresponding to NA 0.62). When the light emitted from the semiconductor light-emitting chip 30 is propagated using an optical element, in order to obtain high-intensity light, the light emitted from the semiconductor light-emitting chip 30 needs to be coupled to the optical element with high efficiency. Therefore, it is necessary to reduce the irradiation of the outermost ray with a divergence angle of 76° onto parts of the semiconductor light-emitting device 1, such as the first submount 10.

[0071] 2, in the present embodiment, emission surface 30F is disposed in front of end surface 11F of spacer 11. Also, first front surface 19F is disposed in front of emission surface 30F (i.e., on the left side in FIG. 2).

[0072] In this way, by disposing the exit surface 30F forward relative to the end surface 11F of the spacer 11, it is possible to prevent the exit light emitted from the light-emitting point 30e in the first direction D1 at a predetermined divergence angle from being blocked by the spacer 11. Therefore, it is possible to prevent a decrease in the utilization efficiency of the exit light. Furthermore, when the exit light is incident on an optical element, it is possible to prevent a decrease in the coupling efficiency of the exit light with the optical element.

[0073] Furthermore, when using an optical element onto which emitted light is incident, the first front surface 19F is disposed forward of the emission surface 30F of the semiconductor light emitting chip 30, so that the optical element can be fixed to the first front surface 19F while suppressing interference between the semiconductor light emitting chip 30 and the optical element. When the optical element is fixed to the first base 19 in this manner, the accuracy of the fixing position of the optical element relative to the semiconductor light emitting chip 30 can be increased compared to when the first submount 10 and the optical element are separated. Therefore, the emitted light from the semiconductor light emitting chip 30 can be efficiently coupled to the optical element.

[0074] Next, a description will be given of the positional relationship between the first front surface 19F and the emission surface 30F for preventing the emitted light having the above-mentioned divergence angle 2θf from being blocked by the first base 19. As shown in Fig. 2, using a distance Dy between the first surface 30a of the semiconductor light-emitting chip 30 and the third surface 19a of the first base 19, and a distance Dz1 between the emission surface 30F and the first front surface 19F, the condition for preventing the outermost rays of the emitted light from being blocked by the first base 19 can be expressed by the following inequality (1):

[0075] tan -1 (Dy / Dz1) ≥ θf (1)

[0076] It is assumed here that the distance from the first surface 30a to the light-emitting point 30e is sufficiently smaller than the distance from the third surface 19a to the first surface 30a. By determining the positional relationship between the semiconductor light-emitting chip 30 and the first base 19 so that inequality (1) holds, it is possible to reduce interference of the emitted light with the first base 19. This makes it possible to improve the utilization efficiency of the light emitted from the light-emitting point 30e. In addition, it is possible to suppress the generation of stray light due to the emitted light being blocked by the first base 19.

[0077] (First Modification of First Embodiment) A semiconductor light emitting device according to Modification 1 of Embodiment 1 and a light source device using the semiconductor light emitting device will be described. The semiconductor light emitting device according to this modification further includes a bonding preparatory film in addition to the semiconductor light emitting device 1 according to Embodiment 1. The light source device according to this modification further includes a lens optical element in addition to the semiconductor light emitting device according to this modification. The semiconductor light emitting device and light source device according to this modification will be described below, focusing on the differences from the semiconductor light emitting device 1 according to Embodiment 1.

[0078] [Overall configuration] First, the configuration of the semiconductor light emitting device 1a and the light source device 102 according to this modification will be described with reference to Fig. 3. Fig. 3 is a schematic cross-sectional view showing the configuration of the semiconductor light emitting device 1a and the light source device 102 according to this modification. Fig. 3 shows a cross section at the same position as the cross section of the semiconductor light emitting device 1 shown in Fig. 2.

[0079] 3, the semiconductor light emitting device 1a according to this modification includes a semiconductor light emitting chip 30, a first submount 10, and a bonding preparatory film 85c. The light source device 102 includes the semiconductor light emitting device 1a and a lens optical element 80. The light source device 102 further includes a bonding preparatory film 85a and a bonding material 85b that fix the lens optical element 80 to the first submount 10, and a heat dissipation member 9 on which the semiconductor light emitting device 1a is disposed. The semiconductor light emitting device 1a is fixed to the heat dissipation member 9 made of Cu or the like by a second bonding material 16 made of solder or the like.

[0080] The lens optical element 80 is an element connected to the first submount 10, and receives the emitted light from the semiconductor light-emitting chip 30. The lens optical element 80 is disposed forward of the first submount 10 along the traveling direction of the emitted light and is connected to the first submount 10. The lens optical element 80 is fixed to the first front surface 19F by a bonding portion 85. In this modification, the lens optical element 80 is a fast-axis collimator lens that collimates the emitted light in the fast-axis direction. For example, a cylindrical lens can be used as the lens optical element 80. Here, the fast-axis direction is the direction perpendicular to the first surface 30a of the semiconductor light-emitting chip 30 (i.e., the up-and-down direction in FIG. 3 ). In order to collimate the emitted light, the lens optical element 80 is positioned so that the focal length f of the lens optical element 80 is equal to the distance from the principal point of the lens optical element 80 to the emission surface 30F of the semiconductor light-emitting chip 30. The lens optical element 80 has an incident surface 80a facing the emission surface 30F of the semiconductor light emitting chip 30.

[0081] The bonding portion 85 is a member that bonds the first submount 10 and the lens optical element 80. The bonding portion 85 includes preliminary bonding films 85a and 85c and a bonding material 85b. The preliminary bonding films 85a and 85c are films that are disposed on the incident surface 80a and the first front surface 19F of the lens optical element 80, respectively. In this modification, the preliminary bonding films 85a and 85c are formed of a multilayer metal film made of, for example, Ni, Ti, Pt, or Au. The components and layering order of the multilayer metal film that constitutes the preliminary bonding films 85a and 85c may be appropriately selected so as to achieve strong bonding depending on the materials of the lens optical element 80, the first base 19, and the bonding material 85b. In this modification, the preliminary bonding films 85a and 85c are each a multilayer metal film in which a Ni film and an Au film are layered in order from the side farthest from the bonding material 85b. The bonding material 85b is made of a solder material such as AuSn, SnAgCu, or SnSb.

[0082] The preliminary bonding film 85a is formed in advance on the incident surface 80a of the lens optical element 80. The preliminary bonding film 85c is formed in advance on the first front surface 19F. The bonding material 85b is formed in advance on either the incident surface 80a or the first front surface 19F. In this embodiment, it is formed on the first front surface 19F. The lens optical element 80 is placed at a predetermined position on the first base 19, and its optical axis is adjusted, and the bonding material 85b and the preliminary bonding film 85a are brought into close contact with each other. Next, with the optical axis adjustment of the lens optical element 80 still complete, the first submount 10 is heated. This melts the bonding material 85b of the bonding portion 85. Next, the first base 19 and the lens optical element 80 are cooled, causing the bonding material 85b to solidify, and the lens optical element 80 is fixed to the first base 19.

[0083] The spacer 11 can be prevented from blocking the light emitted from the light-emitting point 30e of the semiconductor light-emitting chip 30 of the semiconductor light-emitting device 1a having the above configuration. This can improve the utilization efficiency of the emitted light in the semiconductor light-emitting device 1a according to this modification. Furthermore, by determining the positional relationship between the light-emitting surface 30F and the first front surface 19F so that the above-mentioned inequality (1) holds, the first base 19 can be prevented from blocking the emitted light. This can further improve the utilization efficiency of the emitted light in the semiconductor light-emitting device 1a according to this modification. In this case, almost all of the emitted light is incident on the lens optical element 80, becomes collimated light (laser light in this modification) by the lens optical element 80, and is then emitted from the lens optical element 80.

[0084] Furthermore, in the semiconductor light-emitting device 1a according to this modification, the emission surface 30F is disposed rearward of the first front surface 19F. Therefore, in the light source device 102, the lens optical element 80 can be fixed using the first front surface while maintaining a predetermined distance between the emission surface 30F and the lens optical element 80. Therefore, interference between the semiconductor light-emitting chip 30 and the lens optical element 80 can be suppressed. Furthermore, by fixing the lens optical element 80 to the first base 19, the distance between the lens optical element 80 and the emission surface 30F can be minimized, thereby improving the degree of freedom in the optical design of the lens optical element 80. Furthermore, since the semiconductor light-emitting chip 30 and the lens optical element 80 can be fixed to the same first base 19, it is possible to suppress changes over time in the positional relationship between the semiconductor light-emitting chip 30 and the lens optical element 80 after the lens optical element 80 is fixed.

[0085] [Design examples and effects] Next, a specific design example of the semiconductor light emitting device 1a according to this modification will be described with reference to FIG.

[0086] In the semiconductor light emitting device 1a according to this modification, as in the semiconductor light emitting device 1 according to embodiment 1, it is possible to prevent the emitted light from being blocked by the spacer 11. Furthermore, by determining the positional relationship between the semiconductor light emitting chip 30 and the first base 19 so that the above inequality (1) holds, it is possible to prevent the emitted light from being blocked by the first base 19.

[0087] Furthermore, in a configuration in which a lens optical element 80, which is a fast-axis collimator lens, is fixed to a first base 19, as shown in Figure 3, in order to more reliably prevent a collision between the semiconductor light-emitting chip 30 and the lens optical element 80, the distance Dz4 between the first front surface of the first base 19 and the emission surface 30F of the semiconductor light-emitting chip 30 may be, for example, 10 μm or more.

[0088] Furthermore, in order to combine multiple emitted beams in the fast axis direction and accurately direct them into the entrance surface of a small converging lens, the beam width in the fast axis direction of the emitted beams emitted as collimated beams from the lens optical element 80 of the semiconductor light emitting device 1a can be small, for example, 200 μm or more and 400 μm or less. To achieve such a small beam width, the focal length f of the lens optical element 80 must be short. Meanwhile, a thin thickness (sag) Dz5 of the outermost beam of the lens optical element 80 is preferable to shorten the focal length f of the lens optical element 80, but a thicker thickness is preferable to ensure the structural strength of the lens optical element 80. To achieve both a short focal length f and sufficient strength, the thickness Dz5 can be, for example, 100 μm or more and 200 μm or less.

[0089] In this case, if the refractive index of the material that constitutes the lens optical element 80 is n, the distance Dz4 is expressed by the following equation (2).

[0090] Dz4=(DyL / 2-Dz5×tan(θf1)) / tan(θf) (2)

[0091] However, here, the following equation (3) holds true regarding the divergence angle θf1 and the refractive index n of the material that constitutes the lens optical element 80.

[0092] n=sin(θf) / sin(θf1) (3)

[0093] In this modification, a material with a refractive index n of 1.5 or more and 1.8 or less is selected as the material for the lens optical element 80, so the distance Dz4 may be 13 μm or more and 200 μm or less.

[0094] Here, assuming that the thickness Dz3 of the bonding portion 85 is thin enough to be negligible, the distance Dz1 in the first direction between the first front surface 19F and the emission surface (i.e., the distance Dz4) may be 13 μm or more and 200 μm or less. In this case, the distance Dy may be 10 μm or more and 163 μm or less. Here, assuming that the thickness of the bonding material 18 is thin enough to be negligible compared to the thickness of the spacer 11, the distance Dy can be regarded as the thickness of the spacer 11. Therefore, the thickness of the spacer 11 may be 10 μm or more and 163 μm or less.

[0095] The above configuration makes it possible to realize a semiconductor light emitting device 1a with high light utilization efficiency.

[0096] [Manufacturing method] Next, a method for manufacturing the semiconductor light emitting device 1a according to this modification will be described with reference to Figures 4A to 4D, and a method for manufacturing the light source device 102 will be described with reference to Figure 5. Figures 4A to 4D are schematic diagrams illustrating the steps of the method for manufacturing the first submount 10, the bonding preliminary film 85c, and the bonding material 85b according to this modification. Figure 5 is a schematic diagram illustrating the step of attaching the lens optical element 80 to the first submount 10 according to this modification.

[0097] 4A, a base material 19M of the first base platform 19 is prepared. In this modification, a ceramic plate of a predetermined thickness made of AlN, SiC, diamond, or the like is prepared as the base material 19M. The thickness of the base material 19M is, for example, about 50 μm to 1000 μm.

[0098] Next, a metal film such as Ti, Pt, or Au is formed on one main surface (the upper main surface in FIG. 4A) of the base material 19M, and then patterned. Next, a metal film such as Ti, Pt, or Au is formed on the other main surface (the lower main surface in FIG. 4A) of the base material 19M, and then patterned. Next, a metal such as Cu is formed on the patterned metal film on both sides of the base material 19M by electroplating or the like. The thickness of the metal such as Cu is, for example, approximately 10 to 200 μm. This allows multiple spacers 11 to be formed on the base material 19M. Although not shown in FIG. 4A, a second metal material 12 is also simultaneously formed on the main surface of the base material 19M on which the spacers 11 are formed. Furthermore, multiple back-side metal materials 17 are also simultaneously formed on the other main surface of the base material 19M.

[0099] Although not shown, a protective metal film made of Cr, Ni, Au, or the like is then formed by vapor deposition or the like on the surfaces of the spacers 11, the second metal material 12, and the backside metal material 17. Then, a patterned bonding material 18 is formed on a portion of each of the spacers 11. The formation method can be vapor deposition using a metal mask, selective electrolytic plating, or the like.

[0100] 4B, the base material 19M is then diced to divide (ie, separate) it into a plurality of first bases 19. In this way, the first submount 10 can be formed.

[0101] 4C, the first submount 10 is sandwiched between a T-shaped jig 99, and only a portion of the first front surface 19F is exposed from the jig 99. Next, a metal film of Ti, Pt, Au, or the like is formed on the exposed first front surface 19F by vapor deposition or the like to form a preliminary bonding film 85c.

[0102] Subsequently, a bonding material 85b made of a solder material such as AuSn is formed on the surface of the preliminary bonding film 85c by vapor deposition, plating, or the like.

[0103] Subsequently, as shown in FIG. 4D, the jig 99 is removed from the first submount 10, thereby completing the manufacturing of the first submount 10, the bonding preliminary film 85c, and the bonding material 85b according to this modification.

[0104] 5, the semiconductor light-emitting chip 30 is placed on the bonding material 18 of the first submount 10, and the second electrode 32 of the semiconductor light-emitting chip 30 is connected to the second metal material 12 by a metal wire 91. This completes the semiconductor light-emitting device 1 according to the first embodiment. Note that the semiconductor light-emitting device 1 shown in FIG. 5 has a bonding preliminary film 85c (not shown in FIG. 5) and a bonding material 85b formed on the first front surface 19F.

[0105] Next, as shown in Fig. 5, a lens optical element 80 is prepared as a component of the light source device. Here, a preliminary bonding film 85a having a configuration similar to that of the preliminary bonding film 85c is formed on the incident surface 80a of the lens optical element 80 by selective vapor deposition or the like. Next, the preliminary bonding film 85a and a bonding material 85b are bonded together. Specifically, as described above, the lens optical element 80 is fixed to the first base 19 with its optical axis adjusted.

[0106] As described above, the semiconductor light emitting device 1a according to this modification can be manufactured. According to the manufacturing method described above, by using the semiconductor light emitting device 1a according to this modification, the optical axis of the lens optical element 80 constituting the light source device can be easily adjusted, and the manufacture of the light source device can be facilitated.

[0107] (Embodiment 2) A semiconductor light emitting device according to embodiment 2 will be described. The semiconductor light emitting device according to this embodiment differs from the semiconductor light emitting device 1 according to embodiment 1 mainly in that the semiconductor light emitting device according to this embodiment includes a second submount in addition to a first submount. The following description of the semiconductor light emitting device according to this embodiment will focus on the differences from the semiconductor light emitting device 1 according to embodiment 1.

[0108] [Overall configuration] First, the overall configuration of the semiconductor light-emitting device according to the present embodiment will be described with reference to FIGS. 6 to 10B. FIGS. 6, 7, and 8 are a schematic perspective view, a first cross-sectional view, and a second cross-sectional view, respectively, showing the overall configuration of a semiconductor light-emitting device 101 according to the present embodiment. FIGS. 7 and 8 are cross-sectional views taken along lines VII-VII and VIII-VIII in FIG. 6, respectively. FIG. 9 is an exploded perspective view of the semiconductor light-emitting device 101 according to the present embodiment. FIG. 10A is a schematic perspective view showing the configuration of a second submount 120 and members connected to the second submount 120 according to the present embodiment. FIG. 10B is a schematic perspective view showing the configuration of a semiconductor light-emitting chip 30 according to the present embodiment.

[0109] As shown in FIGS. 6 to 8, the semiconductor light emitting device 101 includes a first submount 110, a semiconductor light emitting chip 30, and a second submount 120. In this embodiment, as shown in FIGS. 6 and 7, the semiconductor light emitting device 101 further includes a first sidewall 40 and a second sidewall 50. When used in a light source device, the semiconductor light emitting device 101 is fixed to a heat dissipation member (not shown) by a second bonding material (not shown). The heat dissipation member is disposed on the backside metal material 17 of the first submount 110, and the backside metal material 17 of the first submount 110 and the heat dissipation member are bonded together by the second bonding material.

[0110] The semiconductor light emitting chip 30 has the same configuration as the semiconductor light emitting chip 30 according to embodiment 1. As shown in Fig. 10B, the semiconductor light emitting chip 30 has a first surface 30a and a second surface 30b, and has an optical waveguide WG extending in a first direction D1 parallel to the first surface 30a.

[0111] 7, the first submount 110 has a first base 19, a spacer 111, a second metal material 112, a bonding material 18, and a backside metal material 17. In the present embodiment, the first submount 110 further has bonding materials 48 and 58.

[0112] The spacer 111 is an example of a first metal material disposed on the third surface 19a of the first base 19. The spacer 111 is disposed at least between the third surface 19a of the first base 19 and the first surface 30a of the semiconductor light-emitting chip 30. The spacer 111 covers at least a central portion of the third surface 19a. In this embodiment, the spacer 111 is thermally and electrically connected to the first surface 30a of the semiconductor light-emitting chip 30 via the bonding material 18. In this manner, the semiconductor light-emitting chip 30 is junction-down bonded to the first submount 110 such that the first surface 30a faces the spacer 111. The spacer 111 is, for example, a plate-shaped metal material mainly composed of a metal with high thermal conductivity, such as Cu, with a protective metal film, such as Au, formed on the surface.

[0113] 9, the spacer 111 has a first recess 111c recessed inward of the spacer 111 on an edge (i.e., a front edge) disposed near the light-emitting surface 30F of the semiconductor light-emitting chip 30 in a top view of the third surface 19a of the first base 19. In other words, the spacer 111 has a first recess 111c recessed inward of the spacer 111 in a top view of the third surface 19a. ,vinegar pacer 111thThe spacer 111 has a first recess 111c recessed inward on one of its two edges in one direction, the edge closer to the light-emitting surface 30F. In the present embodiment, the first recess 111c is disposed at the end of the spacer 111 farther from the second metal material 112 in the second direction D2. The first recess 111c is a portion recessed from the end surface 111F (i.e., the front edge) of the spacer 111 disposed near the light-emitting surface 30F of the semiconductor light-emitting chip 30 toward the rear surface 30R (i.e., rearward) in a top view of the third surface 19a. The first recess 111c and other recesses described below can be used, for example, as spaces for placing a bonding material when fixing an optical element or the like to the first base 19 and the second base 29. Furthermore, the spacer 111 has a third recess 111d recessed inward of the spacer 111 at an edge (i.e., rear edge) located near the rear surface 30R when viewed from above on the third surface 19a of the first base 19. The third recess 111d is a portion recessed from the edge 111R (i.e., rear edge) located near the rear surface 30R of the spacer 111 toward the emission surface 30F (i.e., forward) when viewed from above on the third surface 19a. In the present embodiment, the third recess 111d is located at an end of the spacer 111 farther from the second metal material 112 in the second direction D2.

[0114] The second metal material 112 is a metal material disposed on the third surface 19a. The second metal material 112 is electrically insulated from the spacer 111 and electrically connected to the second electrode 32 of the semiconductor light-emitting chip 30. In the present embodiment, the second metal material 112 is electrically connected to the second electrode 32 via the bonding material 48, the first sidewall 40, the third metal material 23 of the second submount 120, and the bonding material 28. As shown in FIG. 7 , the second metal material 112 is disposed apart from the spacer 111 in the second direction D2. The second metal material 112 is, for example, a plate-shaped metal material mainly composed of a metal with high thermal conductivity such as Cu, with a protective metal film such as Ni or Au formed on its surface.

[0115] 9, the second metal material 112 has a second recess 112c recessed inward of the second metal material 112 at an edge (i.e., a front edge) located near the emission surface 30F when viewed from above on the third surface 19a of the first base 19. In other words, the second metal material 112 has a second recess 112c recessed inward of the second metal material 112 at an edge closer to the emission surface 30F of two edges of the second metal material 112 in the first direction D1 when viewed from above on the third surface 19a. The second recess 112c is a portion recessed from an end surface 112F (i.e., a front edge) located near the emission surface 30F of the second metal material 112 toward the rear surface 30R (i.e., rearward) when viewed from above on the third surface 19a. In this embodiment, the second recess 112c is disposed at an end of the second metal material 112 that is farther from the spacer 111 in the second direction D2. The second metal material 112 also has a fourth recess 112d recessed inward of the second metal material 112 at an edge (i.e., rear edge) disposed near the rear surface 30R in a top view of the third surface 19a of the first base 19. The fourth recess 112d is a portion recessed from an edge 112R (i.e., rear edge) disposed near the rear surface 30R of the second metal material 112 toward the emission surface 30F side (i.e., forward) in a top view of the third surface 19a. In this embodiment, the fourth recess 112d is disposed at an end of the second metal material 112 that is farther from the spacer 111 in the second direction D2.

[0116] The second submount 120 is a component disposed on the second surface 30b of the semiconductor light-emitting chip 30. The second submount 120 functions as a heat sink that dissipates heat generated by the semiconductor light-emitting chip 30. As shown in FIG. 7 , the second submount 120 includes a second base 29, a third metal material 23, a fourth metal material 24, a fifth metal material 25, a sixth metal material 26, and a bonding material 28. The semiconductor light-emitting device 101 includes a first sidewall 40 and a second sidewall 50 connected to the second submount 120. In this embodiment, as shown in FIGS. 9 and 10A , the first sidewall 40 and the second sidewall 50 are attached to the second submount 120 in advance. The bonding material 48 and the bonding material 58 are attached to portions of the surfaces of the first sidewall 40 and the second sidewall 50, respectively.

[0117] The second base 29 is a main component of the second submount 120. The second base 29 has a fourth surface 29a and a fifth surface 29b opposite the fourth surface 29a. In this embodiment, the second base 29 includes a second insulating material and one or more first vias B1 and one or more second vias B2 that penetrate between the fourth surface 29a and the fifth surface 29b of the second base 29. In this embodiment, as shown in FIG. 9 , the second base 29 has three first vias B1 arranged in the first direction D1 and three second vias B2 arranged in the first direction D1. The second insulating material of the second base 29 is, for example, a ceramic substrate, a polycrystalline substrate, or a single-crystal substrate made of a material with high thermal conductivity, such as alumina, AlN, SiC, or diamond. Furthermore, the one or more first vias B1 and the one or more second vias B2 are through electrodes made of a metal material formed in holes penetrating between the fourth surface 29a and the fifth surface 29b of the second base 29, and are made of a metal material such as W, Mo, Cu, or Au. A third metal material 23 and a fourth metal material 24 are disposed on the fourth surface 29a of the second base 29. A bonding material 28 is disposed on the third metal material 23. A fifth metal material 25 and a sixth metal material 26 are disposed on the fifth surface 29b of the second base 29. The third metal material 23, the fourth metal material 24, the fifth metal material 25, and the sixth metal material 26 are, for example, plate-shaped metal materials mainly composed of a metal with high thermal conductivity such as Cu, with a protective metal film such as Ni or Au formed on the surface.

[0118] The third metal material 23 is a metal material disposed on the fourth surface 29a of the second base 29. The second surface 30b of the semiconductor light-emitting chip 30 faces the third metal material 23. The third metal material 23 is disposed at least between the fourth surface 29a of the second base 29 and the second surface 30b of the semiconductor light-emitting chip 30. In this embodiment, the third metal material 23 is thermally and electrically connected to the second surface 30b of the semiconductor light-emitting chip 30 via the bonding material 28. In this manner, the semiconductor light-emitting chip 30 is bonded to the second submount 120 such that the second surface 30b faces the third metal material 23. In addition, the third metal material 23 is connected to the first sidewall 40.

[0119] The bonding material 28 is a metal material that bonds the third metal material 23 and the semiconductor light-emitting chip 30. The bonding material 28 is disposed on the surface of the third metal material 23 that faces the semiconductor light-emitting chip 30. The bonding material 28 is made of, for example, AuSn.

[0120] As shown in FIG. 10A , the third metal material 23 has a fifth recess 23c recessed inward of the third metal material 23 on an end face 23F, which is an edge (i.e., a front edge) located near the emission surface 30F, when viewed from above on the fourth surface 29a of the second base 29. The end face 23F is the end face closer to the emission surface 30F of the two end faces of the third metal material 23 in the first direction D1. The fifth recess 23c is a portion recessed from the end face 23F (i.e., a front edge) located near the emission surface 30F of the third metal material 23 toward the rear surface 30R (i.e., rearward) when viewed from above on the fourth surface 29a. In this embodiment, the fifth recess 23c is located at the end of the third metal material 23 farther from the fourth metal material 24 in the second direction D2. Furthermore, the third metal material 23 has a seventh recess 23d recessed inward of the third metal material 23 at an edge (i.e., rear edge) located near the rear surface 30R when viewed from above on the fourth surface 29a of the second base 29. The seventh recess 23d is a portion recessed from the edge 23R (i.e., rear edge) located near the rear surface 30R of the third metal material 23 toward the exit surface 30F side (i.e., forward) when viewed from above on the fourth surface 29a. In the present embodiment, the seventh recess 23d is located at an end of the third metal material 23 farther from the fourth metal material 24 in the second direction D2.

[0121] The fourth metal material 24 is a metal material disposed on the fourth surface 29a of the second base 29. The fourth metal material 24 is electrically insulated from the third metal material 23 and electrically connected to the first electrode 31 of the semiconductor light-emitting chip 30. As shown in FIG. 7 , the fourth metal material 24 is disposed apart from the third metal material 23 in the second direction D2.

[0122] 10A , the fourth metal material 24 has a sixth recess 24c recessed inward of the fourth metal material 24 at an edge (i.e., a front edge) located near the light-emitting surface 30F when viewed from above on the fourth surface 29a of the second base 29. The sixth recess 24c is a portion recessed from the edge 24F (i.e., a front edge) located near the light-emitting surface 30F of the fourth metal material 24 toward the rear surface 30R (i.e., rearward) when viewed from above on the fourth surface 29a. In this embodiment, the sixth recess 24c is located at an end of the fourth metal material 24 farther from the third metal material 23 in the second direction D2. Furthermore, the fourth metal material 24 has an eighth recess 24d recessed inward of the fourth metal material 24 at an edge (i.e., a rear edge) located near the rear surface 30R when viewed from above on the fourth surface 29a of the second base 29. The eighth recess 24d is a portion recessed toward the emission surface 30F (i.e., forward) from the end surface 24R (i.e., rear edge) located near the rear surface 30R of the fourth metal material 24 in a top view of the fourth surface 29a. In the present embodiment, the eighth recess 24d is located at the end of the fourth metal material 24 farther from the third metal material 23 in the second direction D2.

[0123] The fifth metal material 25 is a metal material disposed on a fifth surface 29b of the second base 29. As shown in Fig. 7, the fifth metal material 25 is disposed apart from the sixth metal material 26 in the second direction D2.

[0124] The sixth metal material 26 is a metal material disposed on the fifth surface 29b of the second base 29. The sixth metal material 26 is electrically insulated from the fifth metal material 25 and electrically connected to the second electrode 32 of the semiconductor light-emitting chip 30. In the present embodiment, the sixth metal material 26 is electrically connected to the second electrode 32 via the first via B1, the third metal material 23, and the bonding material 28. As shown in FIG. 7 , the sixth metal material 26 is disposed apart from the fifth metal material 25 in the second direction D2.

[0125] The first sidewall 40 and the second sidewall 50 are members connected to the second submount 120. In this embodiment, as shown in FIG. 7 and other figures, the first sidewall 40 and the second sidewall 50 are arranged in the second direction. The semiconductor light-emitting chip 30 is disposed between the first sidewall 40 and the second sidewall 50. The first sidewall 40 includes a first metal pillar electrically connected to the second metal material 112 and the third metal material 23. The second sidewall 50 includes a second metal pillar electrically connected to the spacer 111 and the fourth metal material 24. The first metal pillar is electrically connected to the second metal material 112 via a bonding material 48 and directly connected to the third metal material 23. The second metal pillar is electrically connected to the spacer 111 via a bonding material 58 and directly connected to the fourth metal material 24.

[0126] In this embodiment, the first side wall 40 includes only the first metal pillar, but may also include a component other than the first metal pillar. Furthermore, the second side wall 50 includes only the second metal pillar, but may also include a component other than the second metal pillar. For example, the first side wall 40 and the second side wall 50 may include an insulating component. The first metal pillar and the second metal pillar are formed of a material with high thermal conductivity and high electrical conductivity, such as Cu, Ni, Al, or Au. In this embodiment, the first metal pillar and the second metal pillar are metal pillars in which a protective metal film of Ni or Au is formed on the surface of a Cu pillar formed by electroplating.

[0127] In this embodiment, the first side wall 40 (i.e., the first metal pillar) has a substantially rectangular pillar shape having a length equivalent to that of the semiconductor light-emitting chip 30 in the first direction D1. As shown in FIG. 10A , the first side wall 40 has a ninth recess 40c recessed inward of the first side wall 40 at an edge (i.e., the front edge) located near the light-emitting surface 30F in a top view of the fourth surface 29a of the second base 29. The ninth recess 40c is a portion recessed from the edge 40F (i.e., the front edge) located near the light-emitting surface 30F of the first side wall 40 toward the rear surface 30R (i.e., rearward) in a top view of the fourth surface 29a. In this embodiment, the ninth recess 40c is located at an end of the first side wall 40 farther from the second side wall 50 in the second direction D2. Furthermore, the first side wall 40 has an eleventh recess 40d recessed inward of the first side wall 40 at an edge (i.e., rear edge) located near the rear surface 30R when viewed from above on the fourth surface 29a of the second base 29. The eleventh recess 40d is a portion recessed from the edge 40R (i.e., rear edge) located near the rear surface 30R of the first side wall 40 toward the exit surface 30F (i.e., forward) when viewed from above on the fourth surface 29a. In the present embodiment, the eleventh recess 40d is located at the end of the first side wall 40 farther from the second side wall 50 in the second direction D2.

[0128] In this embodiment, the second side wall 50 (i.e., the second metal pillar) has a substantially rectangular pillar shape having a length equivalent to that of the semiconductor light-emitting chip 30 in the first direction D1. As shown in FIG. 10A , the second side wall 50 has a tenth recess 50c recessed inward of the second side wall 50 at an edge (i.e., the front edge) located near the light-emitting surface 30F in a top view of the fourth surface 29a of the second base 29. The tenth recess 50c is a portion recessed from the edge 50F (i.e., the front edge) of the second side wall 50 located near the light-emitting surface 30F toward the rear surface 30R (i.e., rearward) in a top view of the fourth surface 29a. In this embodiment, the tenth recess 50c is located at an end of the second side wall 50 farther from the first side wall 40 in the second direction D2. Furthermore, the second side wall 50 has a twelfth recess 50d recessed inward of the second side wall 50 at an edge (i.e., rear edge) located near the rear surface 30R when viewed from above on the fourth surface 29a of the second base 29. The twelfth recess 50d is a portion recessed from the edge 50R (i.e., rear edge) of the second side wall 50 located near the rear surface 30R toward the emission surface 30F (i.e., forward) when viewed from above on the fourth surface 29a. In the present embodiment, the twelfth recess 50d is located at an end of the first side wall 40 farther from the first side wall 40 in the second direction D2.

[0129] As shown in FIG. 10A , a bonding material 48 is attached to the surface of the first side wall 40. A bonding material 58 is attached to the surface of the second side wall 50. The bonding material 48 is a metal material that bonds the first side wall 40 and the second metal material 112. The bonding material 48 is formed of, for example, AuSn. The bonding material 48 is disposed on the surface of the second metal material 112 that faces the first side wall 40. In this embodiment, the bonding material 48 has a portion that is recessed inward to match the ninth recess 40c and the eleventh recess 40d.

[0130] The bonding material 58 is a metal material that bonds the spacer 111 and the second side wall 50. The bonding material 58 is formed of, for example, AuSn. The bonding material 58 is disposed on the surface of the spacer 111 that faces the second side wall 50. In this embodiment, the bonding material 58 has a portion that is recessed inward to match the tenth recess 50c and the twelfth recess 50d.

[0131] With the above configuration, the fourth metal material 24 is electrically connected to the first electrode 31 via the second sidewall 50, the bonding material 58, the spacer 111 of the first submount 110, and the bonding material 18. Therefore, the fifth metal material 25 is electrically connected to the first electrode 31 via the second via B2, the fourth metal material 24, the second sidewall 50, the bonding material 58, the spacer 111 of the first submount 110, and the bonding material 18. On the other hand, the sixth metal material 26 is electrically insulated from the fifth metal material 25 and electrically connected to the second electrode 32 of the semiconductor light-emitting chip 30.

[0132] The semiconductor light-emitting device 101 having the above-described configuration is supplied with power from the fifth metal material 25 and the sixth metal material 26 of the second submount 120. The fifth metal material 25 and the sixth metal material 26 are each connected to an external power source via a metal wire or the like (not shown). The current input to the fifth metal material 25 is input to the first electrode 31 of the semiconductor light-emitting chip 30 via the second via B2, the fourth metal material 24, the second sidewall 50 (second metal pillar), the bonding material 58, the spacer 111, and the bonding material 18 of the second submount 120. The current input to the semiconductor light-emitting chip 30 is output from the second electrode 32 via the third metal material 23, the first via B1, and the sixth metal material 26.

[0133] In the present embodiment, the method of electrically connecting the sixth metal material 26 and the third metal material 23 of the second submount 120 and the method of electrically connecting the fifth metal material 25 and the fourth metal material 24 are performed by providing a first via B1 and a second via B2 that penetrate the second base 29, but this is not limiting. For example, a metal film may be formed on the fourth surface, side surface, and fifth surface of the second base 29 to electrically connect the sixth metal material 26 and the third metal material 23 and to electrically connect the fifth metal material 25 and the fourth metal material 24.

[0134] [Manufacturing method] Next, a method for manufacturing the semiconductor light emitting device 101 according to this embodiment will be described with reference to Figures 11A to 11D. Figures 11A to 11D are schematic cross-sectional views showing steps in the method for manufacturing the semiconductor light emitting device 101 according to this embodiment. Figures 11A to 11D show a cross section passing through the optical waveguide WG of the semiconductor light emitting chip 30 and perpendicular to the first surface 30a.

[0135] 11A, the first submount 110 is placed on the heating stage HS, and the semiconductor light-emitting chip 30 is placed at a predetermined position on the first submount 110. The method for manufacturing the first submount 110 is the same as the method for manufacturing the first submount 10 according to the first modification of the first embodiment.

[0136] Next, as shown in FIG. 11B, a positioning jig JG having a peak-to-valley surface roughness of 1 μm or less is prepared, and the positioning jig JG is placed so that its surface is in contact with the first front surface 19F of the first base 19. Here, the surface of the positioning jig JG that is in contact with the first front surface 19F is flat and perpendicular to the mounting surface of the heating stage HS (i.e., the upper surface of the heating stage HS shown in FIG. 11B). Note that here, "perpendicular" means not only a completely perpendicular state but also a substantially perpendicular state. For example, "perpendicular" means an angle of 85° or more and 95° or less.

[0137] 11C, the second submount 120 is moved using the collet CL. Note that the first sidewall 40 and the second sidewall 50 are attached to the second submount 120, as shown in FIG. 10A.

[0138] 11D, the second submount 120 is positioned so that its second front surface 29F, which is the end surface located near the emission surface 30F of the second base 29 (i.e., the front end surface), is in contact with the surface of the positioning jig JG (the surface that is in the same plane as the surface in contact with the first front surface 19F), and then fixed in place. Here, the second front surface 29F is the end surface closer to the emission surface 30F of the two end surfaces of the second base 29 in the first direction D1.

[0139] Next, the first submount 110 and the like are heated by the heating stage HS to melt the bonding materials. The heating stage HS is then cooled to solidify the bonding materials, thereby manufacturing the semiconductor light emitting device 101. With this manufacturing method, it is possible to keep the positional misalignment between the first front surface 19F and the second front surface 29F in the first direction D1 to within, for example, approximately 5 μm or less.

[0140] At this time, the light emitting surface 30F of the semiconductor light emitting chip 30 may be positioned 10 μm or more behind the first front surface 19F so that the positioning jig JG and the light emitting surface 30F of the semiconductor light emitting chip 30 do not come into contact with each other.

[0141] [Positional relationship between components] Next, the positional relationship between the components of semiconductor light emitting device 101 will be described with reference to Fig. 12. Fig. 12 is a schematic cross-sectional view showing the positional relationship between the components of semiconductor light emitting device 101 according to this embodiment.

[0142] 12, in semiconductor light emitting device 101 according to the present embodiment, similarly to semiconductor light emitting device 1 according to the first embodiment, emission surface 30F is located forward of end surface 111F arranged on the emission surface 30F side (i.e., forward) of spacer 111, and first front surface 19F is located forward of emission surface 30F. As a result, semiconductor light emitting device 101 according to the present embodiment also achieves the same effects as semiconductor light emitting device 1 according to the first embodiment.

[0143] The relationship between the distance Dz between the first front surface 19F and the emission surface 30F, and the distance Dy from the first surface 30a of the semiconductor light-emitting chip 30 to the third surface 19a of the first base 19, which is necessary to prevent the emitted light from being blocked by the first base 19, can be determined in the same way as the relationship between the distance Dz1 and the distance Dy according to the first embodiment. In general, the distance Dz should be equal to or less than the distance Dy. This makes it possible to prevent the emitted light from being blocked by the first base 19 when the divergence angle (2θf) of the emitted light is 90° or less.

[0144] In this embodiment, the second front surface 29F, which is disposed near (ie, in front of) the emission surface 30F of the second base 29 of the second submount 120, is located in front of the emission surface 30F.

[0145] For example, when using an optical element onto which emitted light is incident, the second front surface 29F is disposed forward of the emission surface 30F of the semiconductor light-emitting chip 30, so that the optical element can be fixed to the second front surface 29F while suppressing interference between the semiconductor light-emitting chip 30 and the optical element. Fixing the optical element to the second base 29 in this manner can improve the accuracy of the fixing position of the optical element relative to the semiconductor light-emitting chip 30 compared to when the second submount 120 and the optical element are separated. Therefore, the emitted light from the semiconductor light-emitting chip 30 can be efficiently coupled to the optical element. Furthermore, the first base 19 may be used in addition to the second base 29 to fix the optical element. For example, the first front surface 19F and the second front surface 29F may be in the same plane.

[0146] Furthermore, in order to prevent the emitted light having the above-described divergence angle 2θf from being blocked by the third metal material 23 and the second base 29, the positional relationship between the end face 23F and the second front face 29F of the third metal material 23 and the emission face 30F can be determined in the same manner as the positional relationship between the first front face 19F and the emission face 30F in Embodiment 1. That is, the positional relationship can be determined from the relationship between the distance from the emission face 30F to the end face 23F and the distance from the first surface 30a to the second surface 30b, or the relationship between the distance from the emission face 30F to the second front face 29F and the distance from the first surface 30a to the fourth surface 29a.

[0147] In this embodiment, the end face 23F of the third metal material 23 arranged on the side of the emission surface 30F (i.e., forward) is located forward of the emission surface 30F. This allows heat to be efficiently dissipated to the third metal material 23 and the second base 29 via the bonding material 28 that is in contact with the emission surface 30F, which is the hottest surface of the semiconductor light-emitting chip 30. The heat dissipation path from the semiconductor light-emitting chip 30 will be described later.

[0148] Moreover, the end face 23F of the third metal material 23 is disposed rearward relative to the first front face 19F and the second front face 29F. This makes it possible to prevent the emitted light from being blocked by the third metal material 23. Furthermore, by keeping the distance from the emission surface 30F to the end face 23F approximately equal to or less than the distance from the third metal material 23 to the light-emitting point 30e (that is, approximately the thickness of the semiconductor light-emitting chip 30), it is possible to more reliably prevent the emitted light from being blocked by the third metal material 23.

[0149] Next, heat dissipation paths in semiconductor light emitting device 101 according to this embodiment will be described with reference to Fig. 13 and Fig. 14. Fig. 13 and Fig. 14 are respectively a first cross-sectional view and a second cross-sectional view that are schematic diagrams illustrating heat dissipation paths in semiconductor light emitting device 101 according to this embodiment. Fig. 13 and Fig. 14 are respectively cross-sectional views taken along lines VII-VII and VIII-VIII in Fig. 6. In Fig. 13 and Fig. 14, the outlines of the heat dissipation paths are indicated by arrows.

[0150] 13, a portion of the heat generated in the optical waveguide WG (particularly the active layer) of the semiconductor light-emitting chip 30 is conducted directly to the first submount 110, and while diffusing in the second direction D2, is discharged to a heat dissipation member (not shown) that is disposed opposite the back surface 19b of the first submount 110 and connected to the first submount 110. Another portion of the heat generated in the optical waveguide WG of the semiconductor light-emitting chip 30 is conducted to the first submount 110 via the second submount 120, the first side wall 40, and the second side wall 50, and is discharged to the heat dissipation member (not shown).

[0151] As described above, in the semiconductor light-emitting device 101 according to this embodiment, the first submount 110, the second submount 120, the first sidewall 40, and the second sidewall 50 can be used to effectively dissipate heat generated in the optical waveguide WG of the semiconductor light-emitting chip 30. Furthermore, a third metal material 23 having high thermal conductivity and a predetermined thickness is disposed in a portion of the second submount 120 adjacent to the semiconductor light-emitting chip 30. This allows for more effective heat dissipation of heat generated in the optical waveguide WG. Furthermore, a spacer 111 having high thermal conductivity and a predetermined thickness is disposed in a portion of the first submount 110 adjacent to the optical waveguide WG of the semiconductor light-emitting chip 30. This allows for more effective heat dissipation of heat generated in the optical waveguide WG. Furthermore, because the first submount 110 has an insulating first base 19, a conductive metal such as copper can be used as a heat dissipation member. With this configuration, the positive and negative electrodes of the semiconductor light-emitting chip 30 and the heat dissipation member can be insulated from each other, and the heat generated in the semiconductor light-emitting chip 30 can be dissipated effectively.

[0152] 14, to provide an overview of the heat dissipation paths, arrows are used to indicate the heat dissipation paths of heat generated on the optical waveguide WG at point Y1 near the output surface 30F, points Y2 and Y3 near the center in the first direction D1, and point Y4 near the rear surface 30R. Part of the heat generated from each of these points is conducted to the first submount 110, and the other part is conducted to the second submount 120. At least part of the heat conducted to the second submount 120 is conducted to the first submount 110 via the first sidewall 40 and the second sidewall 50, as shown in FIG.

[0153] 14, heat generated at point Y1 is conducted from the semiconductor light-emitting chip 30 to the third metal material 23 and the second base 29 of the second submount 120. Here, the end face 23F of the third metal material 23 is located forward of the emission face 30F, and the second front face 29F is located forward of the end face 23F. Therefore, the heat generated at point Y1 is conducted while diffusing forward in the second submount 120, so that the heat generated at point Y1 can be effectively dissipated.

[0154] On the other hand, the heat generated at point Y4 near the rear surface 30R is conducted from the semiconductor light-emitting chip 30 to the third metal material of the second submount 120 and the second base 29 on the second submount 120 side, and from the semiconductor light-emitting chip 30 to the spacer 111 of the first submount 110 and the first base 19 on the first submount 110 side.

[0155] In this embodiment, the semiconductor light-emitting chip 30 has a rear surface 30R facing away from the emission surface 30F. The first base 19 has a first rear surface 19R, which is an end surface located near (i.e., rear of) the rear surface 30R, and the second base 29 of the second submount 120 has a second rear surface 29R, which is an end surface located near (i.e., rear of) the rear surface 30R. Here, the rear surface 30R is located forward of the first rear surface 19R, and the rear surface 30R is located forward of the second rear surface 29R. In other words, the first rear surface 19R is the end surface closer to the rear surface 30R of the two end surfaces of the first base 19 in the first direction D1, and the second rear surface 29R is the end surface closer to the rear surface 30R of the two end surfaces of the second base 29 in the first direction D1.

[0156] More specifically, an end face 111R of the spacer 111 of the first submount 110, which is located near the rear face 30R, is located rearward relative to the rear face 30R of the semiconductor light-emitting chip 30. A first rear face 19R, which is an end face of the first base 19 of the first submount 110 located near the rear face 30R, is located rearward relative to the end face 111R. Therefore, the heat generated at point Y4 is conducted while diffusing rearward in the first submount 110, and the heat generated at point Y4 can be effectively dissipated.

[0157] Furthermore, the end face 23R of the third metal material 23 of the second submount 120, which is located near the rear face 30R, is located rearward relative to the rear face 30R of the semiconductor light-emitting chip 30. The second rear face 29R, which is the end face of the second base 29 of the second submount 120 located near the rear face 30R, is located rearward relative to the end face 23R. Therefore, the heat generated at point Y4 is conducted while diffusing rearward in the second submount 120 as well, and the heat generated at point Y4 can be effectively dissipated.

[0158] (Modification 1 of Embodiment 2) A semiconductor light emitting device according to Modification 1 of Embodiment 2 will be described. The semiconductor light emitting device according to this modification differs from semiconductor light emitting device 101 according to Embodiment 2 mainly in that it includes a first optical element and a second optical element. The following describes the semiconductor light emitting device according to this modification, focusing on the differences from semiconductor light emitting device 101 according to Embodiment 2.

[0159] [Overall configuration] First, the overall configuration of the semiconductor light emitting device according to this modification will be described with reference to Fig. 15 and Fig. 16. Fig. 15 and Fig. 16 are a schematic perspective view and a cross-sectional view, respectively, of a semiconductor light emitting device 101a according to this modification. Fig. 16 is a cross-sectional view taken along line XVI-XVI in Fig. 15, showing the semiconductor light emitting device 101a fixed to the heat dissipation member 9 with a second bonding material 16.

[0160] 16, the semiconductor light emitting device 101a according to this modification includes a semiconductor light emitting chip 30, a first submount 110, and a second submount 120, similar to the semiconductor light emitting device 101 according to embodiment 2. Although not shown in FIGS. 15 and 16, the semiconductor light emitting device 101a also includes a first sidewall 40 and a second sidewall 50. The semiconductor light emitting device 101a according to this modification further includes a first optical element 181, a second optical element 182, and four bonding portions 185.

[0161] The first optical element 181 is an example of a light-transmitting member that transmits at least a portion of the emitted light. In this embodiment, as shown in FIG. 15 , the first optical element 181 is a light-transmitting plate having a rectangular flat plate shape. The thickness of the first optical element 181 is, for example, approximately 10 μm or more and 300 μm or less. The first optical element 181 is an example of an optical element connected to the first submount 110 and the second submount 120. The first optical element 181 is disposed forward of the emission surface 30F of the semiconductor light-emitting chip 30. More specifically, as shown in FIGS. 15 and 16 , the first optical element 181 is disposed on the first front surface 19F and the second front surface 29F. In this modification, the first optical element 181 is bonded to the first base 19 and the second base 29 by bonding portions 185 disposed on the first front surface 19F and the second front surface 29F, respectively.

[0162] The second optical element 182 is an example of a third side wall disposed on the first rear surface 19R of the first base 19 and the second rear surface 29R of the second base 29. Similar to the first optical element 181, the second optical element 182 is a light-transmitting plate having a rectangular flat plate shape. The thickness of the second optical element 182 is, for example, approximately 10 μm or more and 1000 μm or less. The second optical element 182 is an example of an optical element connected to the first submount 110 and the second submount 120. The second optical element 182 is disposed rearward of the rear surface 30R of the semiconductor light-emitting chip 30. More specifically, as shown in FIG. 16 , the second optical element 182 is disposed on the first rear surface 19R and the second rear surface 29R. In this modification, the second optical element 182 is bonded to the first base 19 and the second base 29 by bonding portions 185 disposed on the first rear surface 19R and the second rear surface 29R, respectively. In this modification, the second optical element 182, which is a light-transmitting member, is used as an example of the third side wall, but the third side wall does not have to be light-transmitting.

[0163] The bonding portion 185 includes preliminary bonding films 185a and 185c and a bonding material 185b. The preliminary bonding films 185a and 185c have the same configuration as the preliminary bonding films 85a and 85c according to the first modification of the first embodiment. The bonding material 185b has the same configuration as the bonding material 85b according to the first modification of the first embodiment.

[0164] In the semiconductor light-emitting device 101a according to this modification, the semiconductor light-emitting chip 30 is surrounded by the first submount 110, the second submount 120, the first optical element 181, the second optical element 182, the first sidewall 40, and the second sidewall 50. This reduces contact between the semiconductor light-emitting chip 30 and the ambient air around the semiconductor light-emitting device 101a. This prevents the semiconductor light-emitting chip 30 from being deteriorated due to contact with ambient air during transportation of the semiconductor light-emitting device 101a. Furthermore, while surrounding the semiconductor light-emitting chip 30, power can be supplied to the semiconductor light-emitting chip 30 from the outside using the fifth metal material 25 and the sixth metal material 26. Furthermore, using a translucent material for the first optical element 181 allows light emitted from the semiconductor light-emitting chip to be extracted to the outside while protecting the semiconductor light-emitting chip.

[0165] Furthermore, the end faces 40F and 50F of the first side wall 40 and the second side wall 50 near the light-emitting surface 30F (i.e., front) may be in the same plane as the first front surface 19F and the second front surface 29F. Furthermore, the end faces 40R and 50R of the first side wall 40 and the second side wall near the rear surface 30R (i.e., rear) may be in the same plane as the first rear surface 19R and the second rear surface 29R. This reduces the gap between the first side wall 40 and the second side wall 50 and the first optical element 181 and the second optical element 182, thereby further reducing contact between the semiconductor light-emitting chip 30 and the outside air.

[0166] [Manufacturing method] Next, a method for manufacturing the semiconductor light emitting device 101a according to this modification will be described with reference to Fig. 17. Fig. 17 is a schematic perspective view illustrating the method for manufacturing the semiconductor light emitting device 101a according to this modification.

[0167] First, the semiconductor light-emitting device 101 according to the second embodiment is manufactured. At this time, the first submount 110 and the second submount 120 are formed with a bonding preparation film 185c and a bonding material 185b on the first front surface 19F and the first rear surface 19R and the second front surface 29F and the second rear surface 29R, respectively, by the same manufacturing method as in the first modification of the first embodiment. A first optical element 181 is also prepared, and bonding preparation films 185a are formed on the first optical element 181 at positions facing the first front surface 19F and the second front surface 29F, respectively. A second optical element 182 is also prepared, and bonding preparation films 185a are formed on the second optical element 182 at positions facing the first rear surface 19R and the second rear surface 29R, respectively.

[0168] Next, the first optical element 181 is disposed on the first front surface 19F and the second front surface 29F. The second optical element 182 is disposed on the first rear surface 19R and the second rear surface 29R. Next, the bonding material 185b is heated to melt it, and then cooled to solidify it. This allows the first optical element 181 and the second optical element 182 to be bonded to the first base 19 and the second base 29.

[0169] As described above, the semiconductor light emitting device 101a according to this modification can be manufactured.

[0170] (Modification 2 of Embodiment 2) A semiconductor light emitting device according to Modification 2 of Embodiment 2 will be described. The semiconductor light emitting device according to this modification differs from semiconductor light emitting device 101a according to Modification 1 of Embodiment 2 mainly in the configuration for sealing the gap between first optical element 181 and second optical element 182 and first base 19 and second base 29. The semiconductor light emitting device according to this modification will be described below with reference to FIG. 18 , focusing on the differences from semiconductor light emitting device 101a according to Modification 1 of Embodiment 2.

[0171] Fig. 18 is a schematic perspective view showing the overall configuration of a semiconductor light emitting device 101b according to this modification. As shown in Fig. 18, a sealant R1 is used to seal between the first optical element 181 and the second optical element 182 and the first base 19 and the second base 29. As the sealant R1, for example, a siloxane-free or low-siloxane ultraviolet-curable resin or a thermosetting resin can be used.

[0172] Specifically, the sealing material R1 is filled into each of the gap surrounded by the first optical element 181, the first base 19, the second base 29, and the first sidewall 40, the gap surrounded by the first optical element 181, the first base 19, the second base 29, and the second sidewall 50, the gap surrounded by the second optical element 182, the first base 19, the second base 29, and the first sidewall 40, and the gap surrounded by the second optical element 182, the first base 19, the second base 29, and the second sidewall 50. As a result, the semiconductor light-emitting chip 30 is sealed by the first base 19, the second base 29, the first optical element 181, the second optical element 182, and the sealing material R1. In this way, the semiconductor light emitting chip 30 is hermetically sealed by the first submount 110, the second submount 120, the first optical element 181, the second optical element 182, the first sidewall 40, and the second sidewall 50. This reduces contact between the semiconductor light emitting chip 30 and the outside air, thereby suppressing deterioration of the semiconductor light emitting chip 30. Furthermore, the optical tweezers effect can prevent external foreign matter from adhering to the light-emitting surface 30F of the semiconductor light emitting chip 30 during operation of the semiconductor light emitting device 101b. This allows the semiconductor light emitting device 101b to operate for a longer period of time.

[0173] The semiconductor light-emitting device 101b according to this modification can be formed, for example, by manufacturing the semiconductor light-emitting device 101a according to the first modification of the second embodiment, disposing the sealing material R1 in each of the first recess 111c, the second recess 112c, the third recess 111d, and the fourth recess 112d using a nozzle or the like, and then curing the sealing material R1 by ultraviolet irradiation, heating, or the like. Since the first recess 111c, the second recess 112c, the third recess 111d, and the fourth recess 112d are formed in the first submount 110 and the second submount 120, a predetermined volume of sealing material R1 can be easily retained in each recess. Therefore, the semiconductor light-emitting chip 30 can be easily hermetically sealed.

[0174] (Third Modification of Second Embodiment) A semiconductor light emitting device according to Modification 3 of Embodiment 2 will be described. The semiconductor light emitting device according to this modification differs from the semiconductor light emitting device 101b according to Modification 2 of Embodiment 2 mainly in that the rear surface 30R side of the semiconductor light emitting chip 30 is sealed with a sealing material instead of the second optical element 182. The semiconductor light emitting device according to this modification will be described below with reference to FIGS. 19A and 19B, focusing on the differences from the semiconductor light emitting device 101b according to Modification 2 of Embodiment 2.

[0175] FIG. 19A is a schematic cross-sectional view showing the overall configuration of a semiconductor light-emitting device 101c according to this modification. FIG. 19A shows a cross section passing through the semiconductor light-emitting chip 30 and perpendicular to the first surface 30a of the semiconductor light-emitting chip 30. FIG. 19B is a schematic cross-sectional view of the semiconductor light-emitting device 101c according to this modification. FIG. 19B shows a cross section taken along line XIXB-XIXB in FIG. 19A. In FIG. 19B, the outlines of the third metal material 23 and the fourth metal material 24 are also shown by dashed lines to explain the shapes of the third metal material 23 and the fourth metal material 24. The cross section shown in FIG. 19A corresponds to the cross section taken along line XIXA-XIXA in FIG. 19B.

[0176] 19A, the semiconductor light emitting device 101c according to this modification includes a semiconductor light emitting chip 30, a first submount 110, a second submount 120, a first optical element 181, two bonding portions 185, and a sealing material 182c. Although not shown in FIG. 19A, the semiconductor light emitting device 101c also includes a first side wall 40, a second side wall 50, and a sealing material R1, similar to the semiconductor light emitting device 101b according to the second modification of the second embodiment.

[0177] The first submount 110 according to this modification is longer in the first direction D1 than the second submount 120, and the first submount 110 protrudes further rearward relative to the second rear surface 29R than the second submount 120. This allows the sealing material 182c to be easily disposed on the first submount 110. In this modification, the first sidewall 40 and the second sidewall 50 each have an L-shape rather than a rectangular shape in a plan view. The first sidewall 40 and the second sidewall 50 are disposed so as to surround the rear surface 30R of the semiconductor light-emitting chip 30. That is, the first sidewall 40 and the second sidewall 50 have portions disposed in positions facing the rear surface 30R of the semiconductor light-emitting chip 30. The spacer 111, the second metal material 112, the third metal material 23, and the fourth metal material 24 are also formed in shapes such as an L-shape to match the shapes of the first sidewall 40 and the second sidewall 50. This allows the gap between the first side wall 40 and the second side wall 50, the gap between the spacer 111 and the second metal material 112, and the gap between the third metal material 23 and the fourth metal material 24 to be reduced, so that the semiconductor light-emitting chip 30 can be sealed with a small amount of sealing material 182c.

[0178] The sealing material 182c may be a siloxane-free or low-siloxane ultraviolet curable resin or a thermosetting resin, similar to the sealing material R1, or may be a low-melting-point glass.

[0179] A method for manufacturing the semiconductor light emitting device 101c according to this modification will be described. First, similar to the semiconductor light emitting device 101a according to Modification 1 of Embodiment 2, the semiconductor light emitting chip 30, the first submount 110, the second submount 120, the first sidewall 40, the second sidewall 50, and the first optical element 181 are assembled.

[0180] Next, the sealing material R1 is placed in the first recess 111c and the second recess 112c using a nozzle or the like. Also, the sealing material 182c is placed in the gap surrounded by the first submount 110, the second submount 120, the first sidewall 40, and the second sidewall 50 behind the rear surface 30R of the semiconductor light-emitting chip 30 using a nozzle or the like.

[0181] Subsequently, the sealing materials R1 and 182c are cured by ultraviolet irradiation, heating, or the like.

[0182] Through the steps described above, the semiconductor light emitting device 101c according to this modification can be manufactured.

[0183] The semiconductor light-emitting device 101c according to this modification provides the same effects as the semiconductor light-emitting device 101b according to Modification 2 of Embodiment 2. Furthermore, since the semiconductor light-emitting device 101c according to this modification does not use the second optical element 182, the configuration and manufacturing method can be simplified compared to the semiconductor light-emitting device 101b according to Modification 2 of Embodiment 2. The shapes of the first sidewall 40 and the second sidewall 50 are not limited to L-shapes, and any other shape can be adopted. For example, one of the first sidewall 40 and the second sidewall 50 may be rectangular, and the other may be L-shaped. By arranging a portion of the L-shaped sidewall facing the rear surface 30R of the semiconductor light-emitting chip 30, the encapsulant 182c can be positioned so as not to face the rear surface 30R of the semiconductor light-emitting chip 30.

[0184] (Fourth Modification of the Second Embodiment) A semiconductor light emitting device according to Modification 4 of Embodiment 2 will be described. The semiconductor light emitting device according to this modification differs from semiconductor light emitting device 101 according to Embodiment 2 mainly in that it includes a fast axis collimator lens. The semiconductor light emitting device according to this modification will be described below with reference to FIG. 20, focusing on the differences from semiconductor light emitting device 101 according to Embodiment 2.

[0185] 20 is a schematic cross-sectional view showing the overall configuration of a semiconductor light emitting device 101d according to this modification. As shown in FIG. 20, the semiconductor light emitting device 101d includes the semiconductor light emitting device 101 according to the second embodiment, a first optical element 181b, and a bonding portion 185.

[0186] The first optical element 181b is a fast-axis collimator lens. The first optical element 181b is connected to the first submount 110 and the second submount 120. The first optical element 181b is bonded to the first base 19 and the second base 29 by bonding portions 185, similar to the first optical element 181 according to the first modification of the second embodiment.

[0187] This allows the light emitted from the semiconductor light emitting chip 30 to be collimated in the fast axis direction. Furthermore, the first optical element 181b is bonded not only to the first submount 110 but also to the second submount 120 fixed to the semiconductor light emitting chip 30. This prevents the positional relationship between the light emitting point 30e of the semiconductor light emitting chip 30 and the first optical element 181b from changing over time.

[0188] (Fifth Modification of Second Embodiment) A light source device according to Modification 5 of Embodiment 2 will be described. The light source device according to this modification is a light source device that uses semiconductor light emitting device 101b according to Modification 2 of Embodiment 2. The following description will focus on the configuration of the light source device according to this modification other than semiconductor light emitting device 101b.

[0189] [Overall configuration] First, the overall configuration of a light source device according to this modification will be described with reference to FIG. 21. FIG. 21 is a schematic perspective view showing the overall configuration of a light source device 202 according to this modification. The light source device 202 includes a plurality of semiconductor light emitting devices 101b. As shown in FIG. 21, the light source device 202 according to this modification includes a base plate 205, a frame 206, a mounting table 209, a first lead pin LP1, a second lead pin LP2, a wiring member 292, a plurality of lens optical elements 80, a plurality of slow-axis collimator lenses 282, a plurality of reflecting mirrors 283, a condenser lens 284, an optical fiber 285, and an optical fiber holding member 286. A lid for covering the frame 206 may also be provided.

[0190] Base plate 205 is a plate-like member that serves as the base of light source device 202. Base plate 205, frame 206, and mounting base 209 form a housing for light source device 202. Base plate 205 may be provided with a through-hole or the like for fixing light source device 202. Base plate 205 and mounting base 209 also serve as heat dissipation members that dissipate heat generated in the semiconductor light emitting device, and are formed from a metal material with high thermal conductivity, such as Cu, a Cu-W alloy, Al, Ni, or Au.

[0191] The frame body 206 is a rectangular cylindrical member placed on the base plate 205. One opening of the frame body 206 is covered with the base plate 205, thereby forming a housing for the light source device 202. The frame body 206 has holes formed therein through which the first lead pin LP1, the second lead pin LP2, and the optical fiber 285 pass. The frame body 206 is made of a metal material such as Kovar, an Fe-Ni alloy, Fe, Cu, Al, Ni, or Au.

[0192] The first lead pin LP1 and the second lead pin LP2 are columnar terminals for supplying power to the light source device 202. The first lead pin LP1 and the second lead pin LP2 are connected to an external power source (not shown). The first lead pin LP1 and the second lead pin LP2 are fixed in a state in which they penetrate the frame body 206. An insulating material such as glass is filled between the first lead pin LP1 and the second lead pin LP2 and the frame body 206. The first lead pin LP1 and the second lead pin LP2 are formed of a metal material such as kovar, an Fe-Ni alloy, Cu, Ni, Au, or Al. As shown in FIG. 21 , the first lead pin LP1 is electrically connected to the wiring member 292. In this modification, the first lead pin LP1 is electrically connected to the wiring member 292 by three metal wires 91. The second lead pin LP2 is electrically connected to the semiconductor light emitting device 101b. In this modification, the second lead pin LP2 is electrically connected to the semiconductor light emitting device 101b by three metal wires 91.

[0193] The wiring member 292 is a conductive member for supplying power to the plurality of semiconductor light emitting devices 101b. The wiring member 292 is disposed inside the frame 206 on the base plate 205. The shape of the wiring member 292 is not particularly limited, but in this modification, it is L-shaped. The wiring member 292 includes, for example, an L-shaped ceramic plate and a metal layer formed on the upper surface of the ceramic plate. One end of the wiring member 292 is disposed near the first lead pin LP1 and is electrically connected to the first lead pin LP1 by a metal wire 91. The other end of the wiring member 292 is disposed near the semiconductor light emitting device 101b that is located farthest from the first lead pin LP1 among the plurality of semiconductor light emitting devices 101b and is electrically connected to the semiconductor light emitting device 101b by the metal wire 91. This facilitates electrical connection between the first lead pin LP1 and the semiconductor light emitting device 101b that is located farthest from the first lead pin LP1.

[0194] Mounting table 209 is disposed inside frame 206 on base plate 205, and is a stepped platform having mounting surfaces at different heights from base plate 205. In this modification, mounting table 209 has six mounting surfaces at different heights from base plate 205. Semiconductor light emitting device 101b, slow axis collimator lens 282, and reflecting mirror 283 are disposed on each mounting surface.

[0195] The semiconductor light emitting device 101b is a device that generates light in the light source device 202. The configuration of the semiconductor light emitting device 101b and its vicinity will be described with reference to FIG. 22. FIG. 22 is a schematic cross-sectional view showing the configuration of the semiconductor light emitting device 101b and its vicinity in the light source device 202 according to this modification. FIG. 22 shows a cross section passing through the semiconductor light emitting chip 30 of the semiconductor light emitting device 101b and perpendicular to the first surface 30a of the semiconductor light emitting chip 30. As shown in FIG. 22, in the light source device 202, a lens optical element 80, which is a fast-axis collimator lens, is fixed at a predetermined interval near the first optical element 181 of the semiconductor light emitting device 101b. The lens optical element 80 is bonded to the first front surface 19F and the second front surface 29F of the semiconductor light emitting device 101b. The semiconductor light emitting device 101b is fixed to the mounting table 209 with a second bonding material 16, such as SnAgCu solder.

[0196] 21, the light source device 202 includes six semiconductor light emitting devices 101b. Each of the six semiconductor light emitting devices 101b is disposed on a respective mounting surface of the mounting table 209. One semiconductor light emitting device 101b is disposed on each mounting surface. This allows the optical axes of the light beams emitted from the six semiconductor light emitting devices 101b to be at different heights from the base plate 205. In this modification, the height of the mounting surface on which the semiconductor light emitting devices 101b are disposed increases with increasing proximity to the second lead pin LP2.

[0197] The six semiconductor light emitting devices 101b are arranged in a row. A wiring member 292 is arranged along the arrangement direction of the semiconductor light emitting devices 101b. Of the six semiconductor light emitting devices 101b, the sixth metal material 26 of the semiconductor light emitting device 101b arranged closest to the second lead pin LP2 is electrically connected to the second lead pin LP2. In this modification, the sixth metal material 26 and the second lead pin LP2 are connected by three metal wires 91. Furthermore, of two adjacent semiconductor light emitting devices 101b, the fifth metal material 25 of the semiconductor light emitting device 101b closest to the second lead pin LP2 is electrically connected to the sixth metal material 26 of the semiconductor light emitting device 101b farthest from the second lead pin LP2. In this modification, the fifth metal material 25 and the sixth metal material 26 of the adjacent semiconductor light emitting device are connected by three metal wires 91. Furthermore, the fifth metal material 25 of the semiconductor light emitting device 101b arranged farthest from the second lead pin LP2 is electrically connected to the wiring member 292. In this modification, the fifth metal material 25 and the wiring member 292 are connected by three metal wires 91. With the above configuration, power can be supplied from the first lead pin LP1 and the second lead pin LP2 to the six semiconductor light emitting devices 101b electrically connected in series. Therefore, the same current can be supplied to the six semiconductor light emitting devices 101b, thereby suppressing differences in the intensity of the light emitted from each semiconductor light emitting device 101b.

[0198] In light source device 202 according to this modification, fifth metal material 25 and sixth metal material 26 for supplying power are disposed on the upper surface of semiconductor light emitting device 101b, and therefore, when metal wire 91 is connected to fifth metal material 25 and sixth metal material 26 by wire bonding, it is possible to reduce interference of capillaries and the like with each component of light source device 202. Note that this effect can be similarly obtained when any of semiconductor light emitting devices 101, 101a, 101c, and 101d is used as the semiconductor light emitting device constituting the light source device.

[0199] The lens optical element 80 is a lens that collimates the emitted light in the fast axis direction (i.e., the first direction). In this modification, the light source device 202 includes six lens optical elements 80. Each of the six lens optical elements 80 is fixed to each of the semiconductor light emitting devices 101b. More specifically, each lens optical element 80 is connected to the first submount 110 and the second submount 120 of the semiconductor light emitting device 101b.

[0200] Slow axis collimator lens 282 is a lens that collimates the emitted light in the slow axis direction (i.e., the second direction). In this modification, light source device 202 includes six slow axis collimator lenses 282. Each of the six slow axis collimator lenses 282 is disposed on one of the mounting surfaces of mounting table 209. Each slow axis collimator lens 282 is disposed on the optical axis of the emitted light from semiconductor light emitting device 101b.

[0201] Reflecting mirror 283 is an optical element that reflects the light emitted from semiconductor light emitting device 101b. In this modification, light source device 202 includes six reflecting mirrors 283. Each of the six reflecting mirrors 283 is disposed on a respective mounting surface of mounting table 209. Each reflecting mirror 283 is disposed on the optical axis of the light emitted from semiconductor light emitting device 101b, farther from each semiconductor light emitting device 101b than each slow axis collimator lens 282. The light collimated by each slow axis collimator lens 282 is incident on each reflecting mirror 283, and the reflected light is reflected toward condenser lens 284. In this modification, the reflecting surface of each reflecting mirror 283 is inclined at 45 degrees with respect to the optical axis of the light emitted from semiconductor light emitting device 101b so that the light is incident at an angle of 45 degrees.

[0202] Condenser lens 284 is a lens that condenses the outgoing light reflected by the multiple reflecting mirrors 283. Condenser lens 284 condenses the outgoing light onto the incident surface of optical fiber 285. This allows the outgoing light from multiple semiconductor light emitting devices 101b to be multiplexed and coupled into one optical fiber 285.

[0203] The optical fiber 285 is a light-guiding member that guides the light emitted from the plurality of semiconductor light-emitting devices 101b from the inside of the frame 206 to the outside. The incident surface of the optical fiber 285 is arranged inside the frame 206. The incident surface of the optical fiber 285 is arranged at a position away from the condenser lens 284 in the direction of travel of the emitted light, by approximately the focal length of the condenser lens 284. The optical fiber 285 is fixed in a state in which it penetrates the frame 206. The light emitted from the plurality of semiconductor light-emitting devices 101b is output from the exit surface, which is the end face of the optical fiber 285 that is arranged outside the frame 206.

[0204] The optical fiber holding member 286 is a member that fixes the optical fiber 285 to the frame body. The optical fiber holding member 286 has a through hole through which the optical fiber 285 passes, and holds the optical fiber 285 in the through hole. The optical fiber holding member 286 is fixed to the frame body 206, whereby the optical fiber 285 is fixed to the frame body 206.

[0205] [Manufacturing method] Next, an example of a manufacturing method for light source device 202 according to this modification will be described with reference to Figures 23A and 23B. Figures 23A and 23B are perspective views illustrating each step of the manufacturing method for light source device 202. Figures 23A and 23B particularly show the manufacturing step of fixing lens optical element 80 to semiconductor light emitting device 101b, which is part of the manufacturing method for light source device 202.

[0206] First, the frame body 206 and the mounting table 209 are placed and fixed on the base plate 205. The first lead pin LP1 and the second lead pin LP2 are fixed to the frame body 206 in advance.

[0207] Next, the optical fiber 285 and the optical fiber holding member 286 are fixed to the frame 206. After adjusting the position of the condenser lens 284, the condenser lens 284 is fixed to the base plate 205. Next, the position of each of the six reflecting mirrors 283 is adjusted on the mounting surface of the mounting table 209 and then fixed.

[0208] Next, semiconductor light emitting devices 101b according to Modification 2 of Embodiment 2 are prepared and fixed to each mounting surface of the mounting table 209. The semiconductor light emitting devices 101b can then be fixed to the mounting surfaces using, for example, a solder material. Next, six semiconductor light emitting devices 101b are electrically connected in series as described above using metal wires 91 made of Au or Al. The six series-connected semiconductor light emitting devices 101b are then electrically connected to the second lead pins LP2 and the wiring member 292. Furthermore, the wiring member 292 is electrically connected to the first lead pins LP1 so that power can be supplied to the six semiconductor light emitting devices 101b.

[0209] Next, as shown in FIG. 23A, a lens optical element 80, which is a fast axis collimator lens, and a slow axis collimator lens 282 are placed on the mounting surface of the mounting table 209 in front of the semiconductor light emitting device 101b, and a predetermined current is applied to each semiconductor light emitting device 101b to emit light from each semiconductor light emitting device 101b (i.e., each semiconductor light emitting chip 30).

[0210] The emitted light passes through lens optical element 80 (fast axis collimator lens) and slow axis collimator lens 282, and enters optical fiber 285. Here, the positions of lens optical element 80 and slow axis collimator lens 282 are adjusted so that the amount of light emitted from optical fiber 285 is maximized.

[0211] 23B, a bonding material R2, such as an ultraviolet curing resin, is placed on both ends of lens optical element 80, and lens optical element 80 is fixed to semiconductor light emitting device 101b by irradiating it with ultraviolet light. This allows the position of lens optical element 80 to be fixed with high precision relative to the light emitting point of semiconductor light emitting device 101b. Next, slow axis collimator lens 282 is similarly fixed to the mounting surface.

[0212] In the above, the bonding material R2 is made of the same resin as the sealing material of the semiconductor light emitting device 101b, and therefore can firmly fix the lens optical element 80 and the like.

[0213] As described above, the light source device 202 according to this modification can be manufactured. The light source device 202 may further include a lid that covers the frame 206.

[0214] In the light source device 202 of this modified example, in the semiconductor light emitting device 101b mounted thereon, the semiconductor light emitting chip is hermetically sealed in advance by the first submount, the second submount, etc. Therefore, even if foreign matter such as siloxane is generated from the optical components constituting the light source device 202 or the bonding material that fixes the slow axis collimator lens 282, it is possible to prevent the foreign matter from adhering to the light emitting point 30e of the semiconductor light emitting chip and deteriorating the characteristics of the emitted light.

[0215] (Embodiment 3) A semiconductor light emitting device according to embodiment 3 will be described. The semiconductor light emitting device according to this embodiment differs from semiconductor light emitting device 101 according to embodiment 2 mainly in the configuration of the first submount. The semiconductor light emitting device according to this embodiment will be described below with reference to FIGS. 24 and 25, focusing on the differences from semiconductor light emitting device 1 according to embodiment 1.

[0216] 24 and 25 are a perspective view and a cross-sectional view, respectively, showing the overall configuration of a semiconductor light-emitting device 301 according to this embodiment. Fig. 25 is a cross-sectional view taken along line XXV-XXV in Fig. 24.

[0217] As shown in FIG. 25, a semiconductor light emitting device 301 according to this embodiment includes a semiconductor light emitting chip 30, a first submount 310, a second submount 120, a first sidewall 40, and a second sidewall 50.

[0218] The first submount 310 according to this embodiment has a first base 319, a spacer 311, a second metal material 312, a backside metal material 317, and bonding materials 18, 48, and 58. In this embodiment, the first submount 310 has a larger dimension in the second direction D2 than the second submount 120.

[0219] The first base 319 is an example of a first insulating material made of an insulating material. The first base 319 has a third surface 319a, on which a spacer 311 and a second metal material 312 are disposed. The first base 319 has a back surface 319b opposite the third surface 319a, on which a back metal material 317 is disposed. As shown in FIG. 24 , the first base 319 is exposed from the second submount 120 when viewed from above at the third surface 319a. More specifically, the first base 319 is larger in dimension in the second direction D2 than the second base 29, and protrudes from the second submount 120 in the second direction D2 when viewed from above at the third surface 319a.

[0220] The spacer 311 has the same configuration as the spacer 111 according to embodiment 2, except for the dimension in the second direction D2. The spacer 311 is exposed from the second submount 120 when viewed from above the third surface 319a. More specifically, the spacer 311 protrudes from the second submount 120 in the second direction D2 when viewed from above the third surface 319a.

[0221] 24, the spacer 311 has a first recess 311c recessed inward of the spacer 311 on an edge (i.e., a front edge) located near the emission surface 30F when viewed from above on the third surface 319a of the first base 319. In the present embodiment, the first recess 311c is disposed at an end of the spacer 311 farther from the second metal material 312 in the second direction D2. When viewed from above on the third surface 319a, the first recess 311c is a portion recessed from an end surface 311F (i.e., a front edge) located near the emission surface 30F of the spacer 311 toward the rear surface 30R (i.e., rearward). When viewed from above on the third surface 319a of the first base 319, the spacer 311 also has a third recess 311d recessed inward of the spacer 311 on an edge (i.e., a rear edge) located near the rear surface 30R. The third recess 311d is a portion recessed toward the emission surface 30F (i.e., forward) from an end surface 311R (i.e., rear edge) located near the rear surface 30R of the spacer 311 in a top view of the third surface 19a. In the present embodiment, the third recess 311d is disposed at an end of the spacer 311 farther from the second metal material 312 in the second direction D2.

[0222] The second metal material 312 has the same configuration as the second metal material 112 according to embodiment 2, except for the dimension in the second direction D2. As shown in Fig. 24, the second metal material 312 is exposed from the second submount 120 when viewed from above the third surface 319a. More specifically, the second metal material 312 protrudes from the second submount 120 in the second direction D2 when viewed from above the third surface 319a.

[0223] 24, the second metal material 312 has a second recess 312c recessed inward of the second metal material 312 at an edge (i.e., the front edge) located near the emission surface 30F when viewed from above on the third surface 319a of the first base 319. The second recess 312c is a portion recessed from an edge 312F (i.e., the front edge) located near the emission surface 30F of the second metal material 312 toward the rear surface 30R (i.e., rearward) when viewed from above on the third surface 319a. In the present embodiment, the second recess 312c is located at an end of the second metal material 312 farther from the spacer 311 in the second direction D2. Furthermore, the second metal material 312 has a fourth recess 312d recessed inward of the second metal material 312 at an edge (i.e., rear edge) located near the rear surface 30R when viewed from above on the third surface 319a of the first base 319. The fourth recess 312d is a portion recessed from the edge 312R (i.e., rear edge) located near the rear surface 30R of the second metal material 312 toward the emission surface 30F side (i.e., forward) when viewed from above on the third surface 319a. In the present embodiment, the fourth recess 312d is arranged at an end of the second metal material 312 farther from the spacer 311 in the second direction D2.

[0224] The back-side metal material 317 has the same configuration as the back-side metal material 17 according to the second embodiment, except for the dimension in the second direction D2.

[0225] As described above, in semiconductor light-emitting device 301 according to the present embodiment, first recess 311c, second recess 312c, third recess 311d, and fourth recess 312d are exposed from second submount 120 when viewed from above on third surface 319a. Therefore, a bonding material or the like can be easily placed in each recess from above.

[0226] (Modification 1 of Embodiment 3) A light source device according to Modification 1 of Embodiment 3 will be described. The light source device according to this modification differs from light source device 202 according to Modification 5 of Embodiment 2 in the manner in which the semiconductor light emitting device is fixed. The light source device according to this modification will be described below, focusing on the differences from light source device 202 according to Modification 5 of Embodiment 2.

[0227] [Overall configuration] First, the overall configuration of a light source device 302 according to this modification will be described with reference to FIG. 26. FIG. 26 is a schematic perspective view showing the overall configuration of the light source device 302 according to this modification. As shown in FIG. 26, the light source device 302 according to this modification includes a base plate 205, a frame 206, a mounting table 309, a first lead pin LP1, a second lead pin LP2, a plurality of semiconductor light emitting devices 301a, a wiring member 392, a plurality of lens optical elements 80, a plurality of slow-axis collimator lenses 282, a plurality of reflecting mirrors 283, a condenser lens 284, an optical fiber 285, and an optical fiber holding member 286. The semiconductor light emitting device 301a according to this modification also includes the semiconductor light emitting device 301 according to the third embodiment and an auxiliary plate 308.

[0228] The wiring member 392 is a conductive member for supplying power to the plurality of semiconductor light emitting devices 301a. The wiring member 392 has a similar configuration to the wiring member 292 according to the fifth modification of the second embodiment.

[0229] The mounting table 309 is disposed inside the frame 206 on the base plate 205 and is a stepped platform having mounting surfaces at different heights from the base plate 205. In this modification, the mounting table 309 has six mounting surfaces at different heights from the base plate 205. A semiconductor light emitting device 301a, a lens optical element 80, a slow-axis collimator lens 282, and a reflecting mirror 283 are disposed on each mounting surface. Each mounting surface has a screw hole (not shown in FIG. 26) for fixing the auxiliary plate 308 of the semiconductor light emitting device 301a. The shape of the mounting surface may be appropriately determined according to the shape of the elements to be disposed on the mounting surface. For example, as shown in FIG. 26, a notch may be formed on the mounting surface one step above the reflecting mirror 283 to prevent interference with the reflecting mirror 283. The mounting table 309 also functions as a heat dissipation member and is made of a metal material such as Cu or Au.

[0230] As described above, semiconductor light emitting device 301a includes semiconductor light emitting device 301 according to embodiment 3 and auxiliary plate 308. Auxiliary plate 308 is a plate to which semiconductor light emitting device 301 is joined. Semiconductor light emitting device 301a will be described below with reference to FIGS. 27 and 28. FIG. 27 is a perspective view showing the configuration of semiconductor light emitting device 301a according to this modification. FIG. 28 is an exploded perspective view showing a manufacturing method for semiconductor light emitting device 301a according to this modification.

[0231] 27 and 28, auxiliary plate 308 is a plate-like member and is formed with openings 308h for arranging screws and notches 308c. In this modification, auxiliary plate 308 has a stepped shape and two mounting surfaces. Auxiliary plate 308 has a main body made of, for example, oxygen-free copper (e.g., JIS standard C1020, which is pure copper with a purity of 99.96% or more) plated with Ni, Au, or the like. Of the mounting surfaces of auxiliary plate 308, semiconductor light emitting device 301 is placed on the mounting surface located at the highest position.

[0232] 28, solder sheet 308w and semiconductor light emitting device 301 are placed in this order on auxiliary plate 308 and pressure is applied. Next, auxiliary plate 308 is heated to melt solder sheet 308w, and then cooled. Then, solder sheet 308w is solidified, thereby bonding first submount 310 of semiconductor light emitting device 301 to auxiliary plate 308, thereby easily manufacturing semiconductor light emitting device 301a. Solder sheet 308w is formed of a solder material such as SnSb or SnAgCu.

[0233] Since semiconductor light emitting device 301a has the above-described configuration, semiconductor light emitting device 301a including semiconductor light emitting device 301 can be easily fixed to mounting base 309 with screws. Therefore, semiconductor light emitting device 301 can be fixed to mounting base 309 without heating base plate 205, mounting base 309, etc. Furthermore, with this configuration, semiconductor light emitting device 301 can be fixed without heating base plate 205, etc., and therefore deterioration of components on base plate 205 due to temperature rise can be suppressed.

[0234] Next, the configuration in the vicinity of semiconductor light emitting device 301a of light source device 302 according to this modified example will be described with reference to Fig. 29 and other figures. Fig. 29 is a schematic perspective view showing the configuration in the vicinity of semiconductor light emitting device 301a of light source device 302 according to this modified example. As shown in Fig. 29, lens optical element 80 is bonded to first base 319 of semiconductor light emitting device 301 constituting semiconductor light emitting device 301a by bonding material R3. Bonding material R3 is disposed at a position corresponding to first recess 311c and second recess 312c of semiconductor light emitting device 301 (see Fig. 24).

[0235] In this modification, auxiliary plate 308 of semiconductor light emitting device 301a extends forward from the portion on which semiconductor light emitting device 301 is placed. This allows components such as slow axis collimator lens 282 disposed in front of semiconductor light emitting device 301 to be fixed onto auxiliary plate 308. This improves the accuracy of the relative positions of semiconductor light emitting device 301 and optical elements such as slow axis collimator lens 282. In this modification, lens optical element 80 is bonded to semiconductor light emitting device 301 as shown in FIG. 29 , but lens optical element 80 may also be bonded to auxiliary plate 308.

[0236] [Manufacturing method] Next, a method for manufacturing light source device 302 according to this modification will be described with reference to Figures 30A to 30C. Figures 30A to 30C are schematic perspective views showing the steps of the method for manufacturing light source device 302 according to this modification.

[0237] First, similarly to the method for manufacturing the light source device 202 according to the fifth modification of the second embodiment, the frame 206 and the mounting table 309 are fixed to the base plate 205. Next, the optical fiber 285 and the optical fiber holding member 286 are fixed to the frame 206. Next, the condenser lens 284 is fixed to the base plate 205 with an adhesive (not shown), and each of the six reflecting mirrors 283 is fixed to the mounting surface of the mounting table 309 with an adhesive (not shown).

[0238] Next, the semiconductor light emitting device 301a to which the semiconductor light emitting device 301 manufactured as described above is bonded is fixed to the mounting base 309 using screws. In this modification, one screw is screwed through the opening 308h of the auxiliary plate 308 and into the screw hole 309h formed in the mounting surface of the mounting base 309. Furthermore, another screw is screwed through the notch 308c of the auxiliary plate 308 and into the screw hole 309h formed in the mounting surface of the mounting base 309. This allows the semiconductor light emitting device 301a to which the semiconductor light emitting device 301 is bonded to be fixed to the mounting surface of the mounting base 309 without increasing the temperature of the base plate 205. This prevents the adhesive on the base plate 205 from deteriorating. A heat dissipation sheet made of indium (In) or the like may be placed between the auxiliary plate 308 and the mounting surface of the mounting base 309. This increases the thermal conductivity between auxiliary plate 308 and mounting table 309, allowing heat generated in semiconductor light emitting device 301 to be dissipated to mounting table 309 more efficiently.

[0239] Subsequently, as shown in FIG. 30B, metal wires 91 are connected to the metal materials of semiconductor light emitting device 301.

[0240] Next, as shown in FIG. 30C , the positions of the lens optical element 80 and the slow-axis collimator lens 282 (not shown in FIG. 30C ) are adjusted while supplying power to the semiconductor light emitting device 301 to emit light. After the adjustment, the lens optical element 80 is bonded to the semiconductor light emitting device 301, and the slow-axis collimator lens 282 is bonded to the auxiliary plate 308. At this time, a bonding material is placed in the first recess 311c and the second recess 312c (see FIG. 24 ) of the semiconductor light emitting device 301. This holds the bonding material in each recess, preventing the bonding material from adhering to positions not required for bonding the lens optical element 80, such as the semiconductor light emitting chip 30. This allows for the realization of a highly reliable semiconductor light emitting device 301a and light source device 302. This allows for the manufacture of a semiconductor light emitting device 301a including the semiconductor light emitting device 301 and the lens optical element 80.

[0241] As described above, the light source device 302 according to this modified example can be easily manufactured.

[0242] (Modification 2 of Embodiment 3) A semiconductor light emitting device according to Modification 2 of Embodiment 3 and a light source device using the same will be described. The semiconductor light emitting device according to this modification differs from semiconductor light emitting device 301 according to Embodiment 3 mainly in that it includes a first optical element and a second optical element, and in the structures of the recesses in the spacer and the second metal material. The following describes the semiconductor light emitting device and light source device according to this modification, focusing on the differences from semiconductor light emitting device 301 according to Embodiment 3 and light source device 302 according to Modification 1 of Embodiment 3.

[0243] 31 and 32 are a schematic perspective view and an exploded perspective view, respectively, showing the overall configuration of a semiconductor light emitting device 301b according to this modification.

[0244] The semiconductor light emitting device 301b of this modification includes a semiconductor light emitting chip 30, a first submount 310b, a second submount 120, a first sidewall 40, a second sidewall 50, a first optical element 181, and a second optical element 182.

[0245] First submount 310b according to this modification differs from semiconductor light emitting device 301 according to the third embodiment in the configurations of spacer 311b and second metal material 312b.

[0246] As shown in FIG. 32, the spacer 311b differs from the spacer 311 of embodiment 3 in that it has a first inner recess 311c1 and a third inner recess 311d1 in addition to the first recess 311c and the third recess 311d, but is the same in other respects.

[0247] The first inner recess 311c1 is a portion recessed inward of the spacer 311b, and is disposed on an edge (i.e., the front edge) located near the emission surface 30F when viewed from above on the third surface 319a of the first base 319. The third inner recess 311d1 is disposed on an edge (i.e., the rear edge) located near the rear surface 30R when viewed from above on the third surface 319a of the first base 319, and is a portion recessed inward of the spacer 311b. The first inner recess 311c1 and the third inner recess 311d1 are disposed at positions overlapping with the second submount 120 when viewed from above on the third surface 319a.

[0248] As shown in Figure 32, the second metal material 312b differs from the second metal material 312 of embodiment 3 in that it has a second inner recess 312c1 and a fourth inner recess 312d1 in addition to the second recess 312c and the fourth recess 312d, but is the same in other respects.

[0249] The second inner recess 312c1 is a portion recessed inward of the second metal material 312b, and is disposed on an edge (i.e., the front edge) located near the emission surface 30F when viewed from above on the third surface 319a of the first base 319. The fourth inner recess 312d1 is disposed on an edge (i.e., the rear edge) located near the rear surface 30R when viewed from above on the third surface 319a of the first base 319, and is a portion recessed inward of the second metal material 312b. The second inner recess 312c1 and the fourth inner recess 312d1 are disposed at positions overlapping with the second submount 120 when viewed from above on the third surface 319a.

[0250] The first optical element 181 and the second optical element 182 are bonded to the first submount 310b and the second submount 120, respectively, as in Variation 1 of Embodiment 2. The gaps between the first optical element 181 and the second optical element 182 and the first submount 310b and the like are hermetically sealed with a sealant R1. In this variation, the sealant R1 is disposed in the first inner recess 311c1, the second inner recess 312c1, the third inner recess 311d1, and the fourth inner recess 312d1, as shown in FIG. 31 . Because the spacer 311b and the second metal material 312b have these inner recesses, the sealant R1 can be prevented from leaking out of the inner recesses.

[0251] Next, a light source device according to this modification will be described with reference to Fig. 33 and Fig. 34. Fig. 33 and Fig. 34 are a schematic exploded perspective view and a perspective view of the light source device according to this modification. Fig. 33 and Fig. 34 are enlarged views of the vicinity of one semiconductor light emitting device 301b included in the light source device according to this modification.

[0252] Light source device 302b according to this modification differs from light source device 302 according to modification 1 of embodiment 3 in that it uses a semiconductor light emitting device 301b as shown in FIG. 33, but is the same in other respects.

[0253] As shown in FIG. 34, a light source device 302b according to this modification includes a semiconductor light emitting device 301b and a lens optical element 80. As shown in FIG. 33, the lens optical element 80 is disposed in front of the first optical element 181 of the semiconductor light emitting device 301b. After the lens optical element 80 is positioned, it is connected to the first recess 311c and the second recess 312c shown in FIG. 31 via the bonding material R3. Specifically, the lens optical element 80 is bonded to the first base 319 of the semiconductor light emitting device 301b by the bonding material R3 disposed in the first recess 311c and the second recess 312c. At this time, the first recess 311c and the second recess 312c of the first submount 310b are positioned so as to protrude from the second submount 120 in the second direction D2 when viewed from above on the third surface 319a. Therefore, the bonding material R3 can be applied to a predetermined position between the first submount 310b and the lens optical element 80 with high precision and fixed. Therefore, the lens optical element 80 can be fixed at a predetermined position on the semiconductor light emitting device 301b with high precision.

[0254] The semiconductor light emitting device 301b may be joined to an auxiliary plate as in the first modification.

[0255] (Fourth embodiment) A semiconductor light emitting device according to embodiment 4 and a light source device using the same will be described. The semiconductor light emitting device according to this embodiment differs from semiconductor light emitting device 301 according to embodiment 3 mainly in the configuration of the second submount. The semiconductor light emitting device and light source device according to this modification will be described below with reference to FIGS. 35 to 37, focusing on the differences from semiconductor light emitting device 301 according to embodiment 3 and light source device 302 according to modification 1 of embodiment 3.

[0256] Figures 35 and 36 are a schematic perspective view and a cross-sectional view, respectively, showing the overall configuration of a semiconductor light-emitting device 401 according to this embodiment. Figure 36 is a cross-sectional view taken along line XXXVI-XXXVI in Figure 35. For the sake of explanation, the heat dissipation member 9 and the second heat dissipation member 9b are also shown by dashed lines in semiconductor light-emitting device 401 in Figure 36.

[0257] 36, a semiconductor light emitting device 401 according to the present embodiment includes a semiconductor light emitting chip 30, a first submount 310, a second submount 420, a first sidewall 40, and a second sidewall 50. The semiconductor light emitting device 401 according to the present embodiment differs from the semiconductor light emitting device 301 according to the third embodiment in the configuration of the second submount 420, but is the same in other respects.

[0258] The second submount 420 has a second base 429 , a third metal material 23 , a fourth metal material 24 , and a backside metal material 427 .

[0259] The second base 429 according to this embodiment differs from the second base 29 according to the third embodiment in that it does not have a first via B1 or a second via B2. The second base 429 has a fourth surface 429a and a fifth surface 429b opposite the fourth surface 429a. The second base 429 is an example of a second insulating material made of an insulating material. The second base 429 may be made of, for example, a ceramic substrate, a polycrystalline substrate, or a single-crystal substrate made of a material with high thermal conductivity, such as alumina, AlN, SiC, or diamond. The second base 429 may also be made of a composite material consisting of a conductive material and an insulating material formed on the fourth surface 429a. The second base 429 may be, for example, a silicon substrate with an oxide film formed on the surface thereof. In this manner, the second base 429 may include an insulating material. The fourth surface 429a has a third metal material 23 and a fourth metal material 24 arranged thereon, similarly to the second base according to embodiment 3. The backside metal material 427 is arranged on the fifth surface 429b.

[0260] The back-side metal material 427 is a metal material disposed on the fifth surface 429b of the second base 429. The back-side metal material 427 is, for example, a plate-shaped metal material mainly composed of a metal with high thermal conductivity such as Cu, with a protective metal film of Ni, Au, or the like formed on the surface. The back-side metal material 427 may have the same material and thickness as the third metal material 23 and the fourth metal material 24. This allows the same metal materials to be disposed on both sides of the second base 429, thereby suppressing warping of the second base 429. Note that the back-side metal material 427 is not an essential component of the semiconductor light-emitting device 401.

[0261] In the semiconductor light-emitting device 401 according to the present embodiment, power is supplied to the semiconductor light-emitting chip 30 through the spacer 311 and the second metal material 312. The spacer 311 and the second metal material 312 of the semiconductor light-emitting device 401 protrude from the second submount 420 in the second direction D2 when viewed from above the third surface 319a. This allows metal wires or the like to be connected from above the spacer 311 and the second metal material 312. Furthermore, unlike the semiconductor light-emitting device according to the first embodiment, the semiconductor light-emitting device 401 according to the present embodiment can achieve a so-called wireless structure in which the semiconductor light-emitting chip 30 and the second metal material 312 are connected without using the metal wire 91. With this configuration, power is supplied from the outside to the semiconductor light-emitting chip 30 without passing through metal materials such as the first via B1 and the second via B2 according to the third embodiment, thereby reducing the electrical resistance of the power supply path. Furthermore, since wiring is performed using the third metal material 23, which is a rectangular metal having a cross-sectional area larger than that of a metal wire, and the first side wall 40, instead of using a metal wire, the electrical resistance of the power supply path can be further reduced.

[0262] Furthermore, the third metal material 23 and the fourth metal material 24 of the second submount 420 are electrically insulated. Therefore, the second sidewall 50 and the fourth metal material 24, which are electrically connected to the spacer 311, are electrically insulated from the first sidewall 40 and the third metal material 23, which are electrically connected to the second metal material 312. Therefore, when power is supplied using the spacer 311 and the second metal material 312, it is possible to prevent current from flowing through a path other than the semiconductor light-emitting chip 30. Meanwhile, the third metal material 23, the fourth metal material 24, and the second base 429 constituting the second submount 420 are made of a metal or an insulator with high thermal conductivity. Therefore, a portion of the heat generated by the semiconductor light-emitting chip 30 can be transferred to the second submount 420, the first sidewall 40, and the second sidewall 50, and efficiently dissipated from the first submount 310 to the outside. Specifically, the heat is efficiently dissipated to the heat dissipation member 9 connected to the back surface 319b of the first submount 310. Alternatively, a second heat dissipation member 9b may be disposed at a position facing the fifth surface 429b of the second submount 420 and thermally connected to the second submount 420. In this case, since the second submount 420 includes the insulating second base 429, the positive and negative electrodes of the semiconductor light-emitting chip 30 are not short-circuited via the second submount 420. Therefore, according to the present embodiment, while supplying power to the positive and negative electrodes of the semiconductor light-emitting chip 30, a portion of the heat generated in the semiconductor light-emitting chip 30 can be efficiently dissipated to the second heat dissipation member 9b via the second submount 420.

[0263] Next, a light source device according to the present embodiment will be described with reference to Fig. 37 and Fig. 38. Fig. 37 is a schematic perspective view showing the overall configuration of light source device 402 according to the present embodiment. Fig. 38 is a schematic enlarged perspective view showing the configuration in the vicinity of semiconductor light emitting device 401 included in light source device 402 according to the present embodiment.

[0264] As shown in Figure 37, the light source device 402 of this embodiment differs from the light source device 302 of variant example 1 of embodiment 3 in that it has multiple semiconductor light emitting devices 401 instead of multiple semiconductor light emitting devices 301, but is the same in other respects.

[0265] 38 , the light source device 402 supplies power to the semiconductor light emitting device 401 via the metal wire 91 connected to the spacer 311 and the second metal material 312. As described above, the spacer 311 and the second metal material 312 protrude from the second submount 420 in the second direction D2 when viewed from above the third surface 319a. This allows the metal wire 91 to be easily connected from above the spacer 311 and the second metal material 312. Furthermore, the first recess 311c and the second recess 312c of the first submount 310b are disposed at positions protruding from the second submount 420 in the second direction D2 when viewed from above the third surface 319a. Therefore, by applying the bonding material R3 to the first recess 311c and the second recess 312c, the bonding material R3 can be accurately positioned at a predetermined position between the first submount 310 and the lens optical element 80, and the lens optical element 80 can be accurately fixed at a predetermined position on the semiconductor light emitting device 401.

[0266] Semiconductor light emitting device 401 may be joined to an auxiliary plate as in the first modification of the third embodiment.

[0267] Alternatively, a second heat dissipation member 9b may be disposed on the top of each semiconductor light emitting device 401 to thermally connect the second submount 420 to the base plate 205, the frame 206, etc. In this case, the heat generated in the semiconductor light emitting chip of the light source device 402 can be effectively dissipated.

[0268] (Embodiment 5) A semiconductor light emitting device according to embodiment 5 and a light source device using the same will be described. The semiconductor light emitting device according to this embodiment differs from semiconductor light emitting device 101d according to modification 4 of embodiment 2 mainly in that it includes an optical fiber as an optical element and a light receiving element. The semiconductor light emitting device and light source device according to this embodiment will be described below with reference to FIGS. 39 to 41, focusing on the differences from semiconductor light emitting device 101b and light source device 202 according to modification 5 of embodiment 2.

[0269] Fig. 39 is a schematic cross-sectional view showing the configuration of a semiconductor light emitting device 501 and its vicinity in a light source device 502 according to the present embodiment. Fig. 39 shows a cross section passing through a semiconductor light emitting chip 30 included in the semiconductor light emitting device 501 and perpendicular to a first surface 30a of the semiconductor light emitting chip 30. Fig. 40A is a schematic exploded perspective view showing a manufacturing method for the semiconductor light emitting device 501 according to the present embodiment. Fig. 40B is a schematic perspective view showing the configuration of a second submount 520 and members connected to the second submount 520 according to the present embodiment.

[0270] 39, the semiconductor light emitting device 501 includes a semiconductor light emitting chip 30, a first submount 510, a second submount 520, and a light receiving element 570. As shown in FIG. 40B, the semiconductor light emitting device 501 further includes a first sidewall 40 and a second sidewall 50. The light source device 502 further includes a lens optical element 580, which is an optical fiber having a lens formed at its tip, and a bonding material 585.

[0271] As shown in Fig. 39, the first submount 510 has a first base 519, a spacer 511, a backside metal material 517, and a bonding material 18. As shown in Fig. 40A, the first submount 510 further has a second metal material 512. The first submount 510 also has bonding materials 48 and 58 shown in Fig. 40B.

[0272] The first base 519 has a configuration similar to that of the first base 19 according to Modification 4 of Embodiment 2. A spacer 511 and a second metal material 512 are arranged on a third surface 519a of the first base 519. A back-side metal material 517 is arranged on the surface of the first base 519 opposite to the third surface 519a.

[0273] Spacer 511 has the same configuration as spacer 111 according to Variation 4 of Embodiment 2, except for the shape of third surface 519a in top view. As shown in Fig. 40A, spacer 511 has a cutout in a region facing light receiving element 570. This can prevent spacer 511 from contacting light receiving element 570 and metal wire 91.

[0274] The second metal material 512 has the same configuration as the second metal material 112 according to Modification 4 of Embodiment 2, except for the shape of the third surface 519a in a top view. As shown in Fig. 40A, the second metal material 512 has a cutout in a region facing the light receiving element 570. This makes it possible to prevent the second metal material 512 from contacting the light receiving element 570 and the metal wire 91.

[0275] The back-side metal material 517 has the same configuration as the back-side metal material 17 according to the fourth modification of the second embodiment.

[0276] As shown in Fig. 39, the second submount 520 has a second base 529, a third metal material 523, a lower electrode 523a, and bonding materials 528 and 578. As shown in Fig. 40A, the second submount 520 further has a fourth electrode E04, a fifth electrode E05, a seventh electrode E07, an eighth electrode E08, a ninth electrode E09, and a tenth electrode E10. As shown in Fig. 40B, the second submount 520 further has a fourth metal material 524, an eighth metal material 523b, and a ninth metal material 523c.

[0277] The second base 529 has a fourth surface 529a and a fifth surface 529b opposite the fourth surface 529a. In this embodiment, the second base 529 includes a second insulating material and multiple vias (not shown) penetrating between the fourth surface 529a and the fifth surface 529b of the second base 529. The second insulating material of the second base 529 is made of a ceramic substrate, a polycrystalline substrate, a single-crystal substrate, or the like, made of a material such as alumina, AlN, SiC, or diamond. The multiple vias are made of a metal material such as W, Mo, Cu, or Au. A third metal material 523, a fourth metal material 524, a lower layer electrode 523a, an eighth metal material 523b, and a ninth metal material 523c are arranged on the fourth surface 529a of the second base 529. On a fifth surface 529b of the second base 529, a fourth electrode E04, a fifth electrode E05, a seventh electrode E07, an eighth electrode E08, a ninth electrode E09, and a tenth electrode E10 are arranged.

[0278] The third metal material 523 has the same configuration as the third metal material 23 according to Variation 4 of Embodiment 2, except for the shape of the fourth surface 529a when viewed from above. As shown in Fig. 40B, the third metal material 523 has cutouts in areas where the light receiving element 570 and the eighth metal material 523b are arranged. This makes it possible to prevent the third metal material 523 from contacting the light receiving element 570 and the eighth metal material 523b.

[0279] The fourth metal material 524 has the same configuration as the fourth metal material 24 according to Variation 4 of Embodiment 2, except for the shape of the fourth surface 529a in a top view. As shown in Fig. 40B, the fourth metal material 524 has cutouts in areas where the light receiving element 570 and the ninth metal material 523c are arranged. This makes it possible to prevent the fourth metal material 524 from coming into contact with the light receiving element 570 and the ninth metal material 523c.

[0280] The lower layer electrode 523a, the eighth metal material 523b, and the ninth metal material 523c are electrodes connected to the light receiving element 570 and are arranged on the fourth surface 529a. The lower layer electrode 523a is a metal material connected to the light receiving element 570 via a bonding material 578. The eighth metal material 523b is an electrode to which one terminal of the light receiving element 570 is connected via a metal wire 91. The ninth metal material 523c is an electrode to which the other terminal of the light receiving element 570 is connected via a metal wire 91.

[0281] The lower-layer electrode 523a, the eighth metal material 523b, and the ninth metal material 523c are electrodes connected to the light-receiving element 570 and are electrically insulated from one another. The lower-layer electrode 523a, the eighth metal material 523b, and the ninth metal material 523c are arranged on the fourth surface 529a. The lower-layer electrode 523a is a metal material connected to the light-receiving element 570 via a bonding material 578. The eighth metal material 523b is an electrode to which one terminal of the light-receiving element 570 is connected via a metal wire 91. The ninth metal material 523c is an electrode to which the other terminal of the light-receiving element 570 is connected via a metal wire 91. The eighth metal material 523b is electrically connected to the ninth electrode E09 via a via. The ninth metal material 523c is electrically connected to the eighth electrode E08 via a via.

[0282] The fourth electrode E04, the fifth electrode E05, the seventh electrode E07, the eighth electrode E08, the ninth electrode E09, and the tenth electrode E10 are electrodes disposed on the fifth surface 529b and are electrically insulated from one another. The fourth electrode E04 is electrically connected to the third metal material 523 through a via. The fifth electrode E05 is electrically connected to the fourth metal material 524 through a via. The eighth electrode E08 is electrically connected to the ninth metal material 523c through a via. The ninth electrode E09 is electrically connected to the eighth metal material 523b through a via. The seventh electrode E07 and the tenth electrode E10 do not necessarily need to be connected to vias. With this configuration, a voltage can be applied to the light receiving element 570 via the eighth electrode E08 and the ninth electrode E09. Furthermore, power can be supplied to the semiconductor light emitting chip 30 via the fourth electrode E04 and the fifth electrode E05.

[0283] The bonding materials 528 and 578 have the same configuration as the bonding material 28 according to the fourth modification of the second embodiment.

[0284] The light-receiving element 570 is an element for measuring the intensity of light leaking from the rear surface 30R of the semiconductor light-emitting chip 30, and is an example of a functional element disposed on the fourth surface 529a. In this embodiment, functional elements such as the light-receiving element 570 are mounted on the second submount 520. This makes it possible to select the placement position relative to the semiconductor light-emitting chip 30 in three-dimensional space. In other words, the functional element can be placed not only within the plane on which the semiconductor light-emitting chip 30 is disposed, but also at a position away from the plane.

[0285] In this embodiment, the light-receiving element 570 is a photodiode. As shown in FIG. 39 , the light-receiving element 570 is disposed on the second submount 520. More specifically, the light-receiving element 570 is disposed on the fourth surface 529a of the second base 529 via the lower-layer electrode 523a and the bonding material 578. Disposing the light-receiving element 570 on the second submount 520 can prevent light from being blocked by the spacer 511 disposed behind the rear surface 30R of the semiconductor light-emitting chip 30 (i.e., on the right side in FIG. 39 ), compared to when the light-receiving element 570 is disposed on the first submount 510. The light-receiving element 570 is electrically connected to the eighth metal material 523b and the ninth metal material 523c. More specifically, the light-receiving element 570 has two terminals, one of which is electrically connected to the eighth metal material 523b via the metal wire 91, and the other of which is electrically connected to the ninth metal material 523c via the metal wire 91.

[0286] Next, a light source device 502 using a semiconductor light emitting device 501 according to this embodiment will be described with reference to Fig. 39 and Fig. 41. Fig. 41 is a schematic perspective view showing the configuration of light source device 502 according to this embodiment. Fig. 41 shows an enlarged view of the vicinity of semiconductor light emitting device 501, along with an overall image of light source device 502.

[0287] The lens optical element 580 is an example of an optical element into which light emitted from the semiconductor light-emitting chip 30 of the semiconductor light-emitting device 501 is incident. The lens optical element 580 is a step-index optical fiber and has a core 581 and a cladding 582 that covers the core 581. One end of the lens optical element 580 has a convex lens shape, which is a so-called lensed fiber. This end of the lens optical element 580 is disposed near the light emission surface 30F of the semiconductor light-emitting chip 30. This allows the light emitted from the light emission surface 30F to be focused on the core 581 of the lens optical element 580, so that the emitted light can be coupled to the lens optical element 580 with high efficiency.

[0288] As shown in FIG. 39 , the lens optical element 580 is connected to the first submount 510 and the second submount 520. In this embodiment, the lens optical element 580 is connected to the first base 519 of the first submount 510 and the second base 529 of the second submount 520 by a bonding material 585. For example, an ultraviolet-curable resin or a thermosetting resin can be used as the bonding material 585. With the above configuration, the lens optical element 580 is fixed not only to the first submount 510 but also to the second submount 520 bonded to the semiconductor light-emitting chip 30. Therefore, it is possible to prevent a change over time in the positional relationship between the lens shape at the tip of the lens optical element 580 and the semiconductor light-emitting device, which would otherwise cause a change in the coupling efficiency of the emitted light.

[0289] Light source device 502 further includes a package made up of a base plate 505, a frame 506, and lead pins LP01 to LP10. It also includes an optical fiber holding member 586 that holds lens optical element 580, and a heat dissipation member 9 that holds semiconductor light emitting device 501 on base plate 505. As shown in FIG. 41, the package of light source device 502 has a so-called butterfly-type package structure.

[0290] Base plate 505 is a plate-like member that serves as the base of light source device 502. Base plate 505 and frame 506 form a housing for light source device 502. The outer periphery of base plate 505 may be provided with through holes for fixing light source device 502 with screws or the like. Base plate 505 is formed of a metal material such as Cu, a Cu-W alloy, or a Cu-Mo alloy.

[0291] Frame body 506 is a rectangular cylindrical member placed on base plate 505. One opening of frame body 506 is covered with base plate 505 to form a housing of light source device 502. Frame body 506 has holes formed therein through which lead pins LP01 to LP10 and lens optical element 580 pass. Frame body 506 is made of a metal material such as kovar or an Fe—Ni alloy.

[0292] The heat dissipation member 9 is a member on which the semiconductor light emitting device 501 is placed. The heat dissipation member 9 is disposed between the base plate 505 and the semiconductor light emitting device 501, and dissipates heat generated by the semiconductor light emitting device 501 to the base plate 505.

[0293] The lead pins LP01 to LP10 are terminals for supplying power and electrical signals from the outside to the light source device 502. Signals may also be output from the lead pins LP01 to LP10. The lead pins LP01 to LP10 are fixed in a state in which they penetrate the frame body 506. An insulating material such as glass or ceramic is filled between each of the lead pins LP01 to LP10 and the frame body 506. The lead pins LP01 to LP10 are formed of a metal material such as Kovar or an Fe-Ni alloy.

[0294] In the present embodiment, the lead pins LP04 and LP05 are electrically connected to the fourth electrode E04 and the fifth electrode E05 of the semiconductor light-emitting device 501 via the metal wire 91, respectively. This allows power to be supplied from the lead pins LP04 and LP05 to the semiconductor light-emitting chip 30. Furthermore, the lead pins LP08 and LP09 are electrically connected to the eighth electrode E08 and the ninth electrode E09 of the semiconductor light-emitting device 501 via the metal wire 91, respectively. This allows a voltage to be applied to the light-receiving element 570 of the semiconductor light-emitting device 501 from the lead pins LP08 and LP09, and a signal corresponding to the amount of light emitted from the semiconductor light-emitting chip 30 can be monitored by measuring the value of the current flowing between the lead pin LP08 and the lead pin LP09.

[0295] In the light source device 502, the semiconductor light emitting device 501 further includes a thermistor 560. The thermistor 560 is an element for measuring temperature and is an example of a functional element disposed on the fifth surface 529b. In the present embodiment, the thermistor 560 is disposed on the tenth electrode E10 of the semiconductor light emitting device 501. The thermistor 560 has a terminal electrically connected to the seventh electrode E07 via the metal wire 91. This allows the temperature of the semiconductor light emitting device 501 to be monitored based on signals output from the lead pin LP07 and the lead pin LP10.

[0296] In this embodiment, the semiconductor light-emitting device 501 includes a second submount 520, and the functional element is mounted on the second submount 520. This makes it possible to select the placement position of the functional element in three-dimensional space with respect to the semiconductor light-emitting chip 30. That is, not only two-dimensional mounting in which the functional element is placed on the same plane as the semiconductor light-emitting chip 30, but also three-dimensional mounting can be realized, thereby increasing the design freedom in the placement of the functional element.

[0297] (Embodiment 6) A semiconductor light emitting device according to embodiment 6 will be described. The semiconductor light emitting device according to this embodiment differs from semiconductor light emitting device 101 according to embodiment 2 mainly in that it does not include first via B1 and second via B2 and that it includes a Zener diode. The semiconductor light emitting device according to this embodiment will be described below with reference to FIGS. 42A and 42B, focusing on the differences from semiconductor light emitting device 101 according to embodiment 2.

[0298] Fig. 42A is a schematic cross-sectional view showing the overall configuration of semiconductor light-emitting device 601 according to this embodiment. Fig. 42A shows a cross section perpendicular to first direction D1 of semiconductor light-emitting device 601. Fig. 42B is an equivalent circuit of semiconductor light-emitting device 601 according to this embodiment.

[0299] As shown in FIG. 42A, the semiconductor light emitting device 601 of this embodiment includes a semiconductor light emitting chip 30, a first submount 110, a second submount 620, a first sidewall 40, a second sidewall 50, and a Zener diode 660.

[0300] The second submount 620 has a second base 629, a third metal material 623, a fourth metal material 624, and a bonding material .

[0301] The second base 629 differs from the second base 29 according to the second embodiment in that it does not have a first via B1 or a second via B2. The second base 629 is an example of a second insulating material. The second base 629 may be a ceramic substrate, a polycrystalline substrate, or a single-crystal substrate made of a material with high thermal conductivity, such as alumina, AlN, SiC, or diamond. The second base 629 has a fourth surface 629a and a fifth surface 629b opposite the fourth surface 629a. A third metal material 623 and a fourth metal material 624 are disposed on the fourth surface 629a, the fifth surface 629b, and the side surfaces connecting the fourth surface 629a and the fifth surface 629b. A Zener diode 660 is disposed on the fifth surface 629b.

[0302] The third metal material 623 is a metal material electrically connected to the semiconductor light-emitting chip 30 and the first sidewall 40. The third metal material 623 is continuously disposed from the fourth surface 629a, along the side surface of the second base 529, to the fifth surface 629b. The third metal material 623 is connected to one terminal of the Zener diode 660 at the fifth surface 629b. As shown in FIG. 42B , in this embodiment, the third metal material 623 is connected to the anode terminal of the Zener diode 660. The third metal material 623 is electrically insulated from the fourth metal material 624. The third metal material 623 is, for example, a patterned metal film of Ni, Au, or the like, and is formed by a vacuum deposition process or the like multiple times.

[0303] The fourth metal material 624 is a metal material that is electrically connected to the second side wall 50. The fourth metal material 624 is continuously disposed from the fourth surface 629a, along the side surface of the second base 529, to the fifth surface 629b. The fourth metal material 624 is connected to the other terminal of the Zener diode 660 at the fifth surface 629b. As shown in FIG. 42B , in this embodiment, the fourth metal material 624 is connected to the cathode terminal of the Zener diode 660. The fourth metal material 624 is electrically insulated from the third metal material 623. The fourth metal material 624 is, for example, a patterned metal film of Ni, Au, or the like, and is formed by a vacuum deposition process or the like that is repeated multiple times.

[0304] The Zener diode 660 is an element for protecting the semiconductor light-emitting chip 30 by maintaining the voltage applied to the semiconductor light-emitting chip 30 at or below a certain level, and is an example of a functional element disposed on the fifth surface 629b. As shown in Fig. 42B, the anode terminal and the cathode terminal of the Zener diode are connected to the third metal material 623 and the fourth metal material 624, respectively.

[0305] As described above, the semiconductor light-emitting device 601 according to this embodiment includes the Zener diode 660 connected in parallel with the semiconductor light-emitting chip 30 as shown in FIG. 42B . This makes it possible to prevent the semiconductor light-emitting chip 30 from deteriorating even when an external surge is applied to the semiconductor light-emitting device 601. In this embodiment, the semiconductor light-emitting device 601 includes the second submount 620, and the functional element is mounted on the second submount 620. This makes it possible to select the placement position of the functional element relative to the semiconductor light-emitting chip in three-dimensional space. In other words, not only two-dimensional mounting in which the functional element is placed on the same plane as the semiconductor light-emitting chip, but also three-dimensional mounting can be realized, thereby increasing the design freedom in the placement of the functional element.

[0306] (Embodiment 7) A semiconductor light emitting device according to embodiment 7 will be described. The semiconductor light emitting device according to this embodiment differs from semiconductor light emitting device 401 according to embodiment 4 mainly in that it includes a plurality of semiconductor light emitting chips. The semiconductor light emitting device according to this embodiment will be described below with reference to FIGS. 43A and 43B, focusing on the differences from semiconductor light emitting device 401 according to embodiment 4.

[0307] Fig. 43A is a schematic cross-sectional view showing the overall configuration of semiconductor light-emitting device 701 according to this embodiment. Fig. 43A shows a cross section perpendicular to first direction D1 of semiconductor light-emitting device 701. Fig. 43B is an equivalent circuit of semiconductor light-emitting device 701 according to this embodiment.

[0308] As shown in FIG. 43A, the semiconductor light emitting device 701 of this embodiment includes a first semiconductor light emitting chip 7301, a second semiconductor light emitting chip 7302, a third semiconductor light emitting chip 7303, a first submount 710, a second submount 720, first side walls 740a, 740b and 740c, and a second side wall 50.

[0309] The first semiconductor light emitting chip 7301 , the second semiconductor light emitting chip 7302 , and the third semiconductor light emitting chip 7303 are elements similar to the semiconductor light emitting chip 30 according to each of the above embodiments, and are disposed on the first submount 710 .

[0310] Similar to the semiconductor light-emitting chip 30, the first semiconductor light-emitting chip 7301 has a first surface, a second surface opposite to the first surface, a first optical waveguide extending in a first direction parallel to the first surface and positioned closer to the first surface than the second surface, and a first emission surface which is one of the side surfaces connecting the first surface and the second surface and intersects with the first direction, and which emits light in the first direction.

[0311] The second semiconductor light emitting chip 7302 has a sixth surface corresponding to the first surface of the semiconductor light emitting chip 30. The sixth surface is a portion of the surface of the second semiconductor light emitting chip 7302 that faces the first submount 710. The second semiconductor light emitting chip 7302 further has a seventh surface that is the surface opposite to the sixth surface, a second optical waveguide that extends in a first direction parallel to the sixth surface and is positioned closer to the sixth surface than the seventh surface, and a second emission surface that is one of the side surfaces connecting the sixth surface and the seventh surface and intersects with the first direction, and that emits emitted light in the first direction.

[0312] The third semiconductor light emitting chip 7303 has an eighth surface corresponding to the first surface of the semiconductor light emitting chip 30. The eighth surface is a portion of the surface of the third semiconductor light emitting chip 7303 that faces the first submount 710. The third semiconductor light emitting chip 7303 further has a ninth surface that is the surface opposite to the eighth surface, a third optical waveguide that extends in a first direction parallel to the eighth surface, and a third emission surface that is one of the side surfaces connecting the eighth surface and the ninth surface that intersects with the first direction and emits light in the first direction.

[0313] The first submount 710 has a first base 719, spacers 711a, 711b and 711c, a second metal material 712, a rear metal material 717, and bonding materials 18, 48a, 48b, 48c and 58.

[0314] First base 719 has the same configuration as first base 319 according to embodiment 3. Spacers 711a, 711b, and 711c and a second metal material 712 are arranged on a third surface 719a of first base 719. A back-side metal material 717 is arranged on the surface of first base 719 opposite to third surface 719a.

[0315] The back metal material 717 has the same configuration as the back metal material 317 according to the fourth embodiment.

[0316] The second submount 720 has a second base 729, third metal materials 723a, 723b, and 723c, a fourth metal material 724, a rear metal material 727, and a bonding material .

[0317] The second base 729 has the same configuration as the second base 429 according to Embodiment 4. The second base 729 has a fourth surface 729a and a fifth surface 729b.

[0318] The first surface of the first semiconductor light emitting chip 7301 is connected to the spacer 711a, and the second surface is connected to the third metal material 723a. The sixth surface of the second semiconductor light emitting chip 7302 is connected to the spacer 711b, and the seventh surface is connected to the third metal material 723b. The eighth surface of the third semiconductor light emitting chip 7303 is connected to the spacer 711c, and the ninth surface is connected to the third metal material 723c.

[0319] The first sidewalls 740a, 740b, and 740c and the second sidewall 50 are arranged side by side between the first submount 710 and the second submount 720. A first semiconductor light emitting chip 7301, a second semiconductor light emitting chip 7302, and a third semiconductor light emitting chip 7303 are arranged between the first sidewall 740a and the second sidewall 50. Furthermore, the first semiconductor light emitting chip 7301 is arranged between the first sidewall 740a and the first sidewall 740b. The second semiconductor light emitting chip 7302 is arranged between the first sidewall 740b and the first sidewall 740c. The third semiconductor light emitting chip 7303 is arranged between the first sidewall 740c and the second sidewall 50.

[0320] The spacer 711a is an example of a first metal material disposed on the third surface 719a of the first base 719. The spacer 711a is disposed at least between the third surface 719a of the first base 719 and the first surface of the first semiconductor light-emitting chip 7301. In this embodiment, the spacer 711a is thermally and electrically connected to the first surface of the first semiconductor light-emitting chip 7301 via the bonding material 18. In this manner, the first semiconductor light-emitting chip 7301 is junction-down bonded to the first submount 710 such that the first surface faces the spacer 711a. The spacer 711a is also connected to the first sidewall 740b via the bonding material 48b.

[0321] The spacer 711b is an example of a seventh metal material disposed on the third surface 719a of the first base 719. The spacer 711b is disposed at least between the third surface 719a of the first base 719 and the sixth surface of the second semiconductor light emitting chip 7302. In this embodiment, the spacer 711b is thermally and electrically connected to the sixth surface of the second semiconductor light emitting chip 7302 via the bonding material 18. In this manner, the second semiconductor light emitting chip 7302 is junction-down bonded to the first submount 710 such that the sixth surface faces the spacer 711b.

[0322] The spacer 711c is an example of a metal material disposed on the third surface 719a of the first base 719. The spacer 711c is disposed at least between the third surface 719a of the first base 719 and the eighth surface of the third semiconductor light-emitting chip 7303. In this embodiment, the spacer 711c is thermally and electrically connected to the eighth surface of the third semiconductor light-emitting chip 7303 via the bonding material 18. In this manner, the third semiconductor light-emitting chip 7303 is junction-down bonded to the first submount 710 such that the eighth surface faces the spacer 711c. The second sidewall 50 is connected to the spacer 711c via the bonding material 58.

[0323] The second metal material 712 has the same configuration as the second metal material 312 according to the fourth embodiment.

[0324] The spacers 711a, 711b, 711c and the second metal material 712 are electrically insulated from one another. The spacers 711a, 711b, 711c and the second metal material 712 are, for example, plate-shaped metal materials whose main component is a metal with high thermal conductivity, such as Cu, and on whose surface a metal film, such as Ni or Au, is formed.

[0325] Next, each component of the second submount 720 will be described.

[0326] The third metal material 723a is a metal material disposed on the fourth surface 729a of the second base 729. The second surface of the first semiconductor light-emitting chip 7301 faces the third metal material 723a. The third metal material 723a is disposed at least between the fourth surface 729a of the second base 729 and the second surface of the first semiconductor light-emitting chip 7301. In this embodiment, the third metal material 723a is thermally and electrically connected to the second surface of the first semiconductor light-emitting chip 7301 via the bonding material 28. In this manner, the first semiconductor light-emitting chip 7301 is bonded to the second submount 720 such that the second surface faces the third metal material 723a. The third metal material 723a is also connected to the first sidewall 740a. The first sidewall 740a is thermally and electrically connected to the second metal material 712 via the bonding material 48a. That is, the third metal material 723a is electrically connected to the second metal material 712 via the first side wall 740a and the bonding material 48a.

[0327] The third metal material 723b is a metal material disposed on the fourth surface 729a of the second base 729. The seventh surface of the second semiconductor light emitting chip 7302 faces the third metal material 723b. The third metal material 723b is disposed at least between the fourth surface 729a of the second base 729 and the seventh surface of the second semiconductor light emitting chip 7302. In this embodiment, the third metal material 723b is thermally and electrically connected to the seventh surface of the second semiconductor light emitting chip 7302 via the bonding material 28. In this manner, the second semiconductor light emitting chip 7302 is bonded to the second submount 720 such that the seventh surface faces the third metal material 723b. In addition, the third metal material 723b is connected to the first sidewall 740b. The first sidewall 740b is thermally and electrically connected to the spacer 711a via the bonding material 48b. That is, the third metal material 723b is electrically connected to the spacer 711a via the first sidewall 740b and the bonding material 48b. The third metal material 723b is also an example of a fourth metal material connected to the seventh surface. The first sidewall 740b is also an example of a second sidewall that thermally and electrically connects the spacer 711a and the third metal material 723b, which is also the fourth metal material.

[0328] The third metal material 723c is a metal material disposed on the fourth surface of the second base 729. The ninth surface of the third semiconductor light emitting chip 7303 faces the third metal material 723c. The third metal material 723c is disposed at least between the fourth surface 729a of the second base 729 and the ninth surface of the third semiconductor light emitting chip 7303. In this embodiment, the third metal material 723c is thermally and electrically connected to the ninth surface of the third semiconductor light emitting chip 7303 via the bonding material 28. In this manner, the third semiconductor light emitting chip 7303 is bonded to the second submount 720 so that the ninth surface faces the third metal material 723c. In addition, the third metal material 723c is connected to the first sidewall 740c. The first sidewall 740c is thermally and electrically connected to the spacer 711b via the bonding material 48c. That is, the third metal material 723c is electrically connected to the spacer 711b via the first sidewall 740c and the bonding material 48c.

[0329] The fourth metal material 724 is a metal material disposed on a fourth surface of the second base 729. The fourth metal material 724 is connected to the second side wall 50. The second side wall 50 is thermally connected to the spacer 711c via the bonding material 58. In other words, the fourth metal material 724 is thermally connected to the spacer 711c via the second side wall 50 and the bonding material 58.

[0330] The third metal materials 723a, 723b, 723c and the fourth metal material 724 are plate-shaped metal materials that are primarily composed of a metal with high thermal conductivity, such as Cu, and have a metal film, such as Ni or Au, formed on the surface. The back-side metal material 727 and the bonding material 28 have the same configurations as the back-side metal material 427 and the bonding material 28 according to the fourth embodiment, respectively.

[0331] With the above-described configuration, the first semiconductor light-emitting chip 7301, the second semiconductor light-emitting chip 7302, and the third semiconductor light-emitting chip 7303 of the semiconductor light-emitting device 701 according to this embodiment can be electrically connected in series as shown in Fig. 43B. That is, the first semiconductor light-emitting chip 7301, the second semiconductor light-emitting chip 7302, and the third semiconductor light-emitting chip 7303 are electrically connected in series between the spacer 711c, which also functions as an electrode to the outside, and the second metal material 712.

[0332] According to such a semiconductor light emitting device 701, a plurality of semiconductor light emitting chips can be arranged in a small space, and therefore a small, high-output semiconductor light emitting device can be realized.

[0333] Furthermore, the positional relationship in the first direction between each semiconductor light emitting chip according to the present embodiment and the first submount 710 and the second submount 720 may be the same as the positional relationship between the semiconductor light emitting chip 30 according to the second embodiment and the first submount 110 and the second submount 120. That is, the first semiconductor light emitting chip 7301 may have a first emission surface which is a side surface from which emitted light is emitted, and the first emission surface may be located forward of an end face (i.e., front) of the spacer 711a which is located near the first emission surface, and a second front surface which is an end face (i.e., front) of the second base 729 which is located near the first emission surface may be located forward of the first emission surface. Furthermore, the second semiconductor light emitting chip 7302 may have a second emission surface which is a side surface from which emitted light is emitted, and the second emission surface may be located forward of an end face (i.e., front) of the spacer 711b which is an example of a seventh metal material which is located near the second emission surface, and the second front surface may be located forward of the second emission surface. The third semiconductor light emitting chip 7303 has a third emission surface which is a side surface from which emitted light is emitted, and the third emission surface may be located forward of an end surface of the spacer 711c located near the third emission surface, and the second front surface may be located forward of the third emission surface. Furthermore, the end surface of the third metal material 723a located near the first emission surface (i.e., the front) may be located forward of the first emission surface and rearward of the second front surface. The end surface of the third metal material 723b located near the second emission surface (i.e., the front) may be located forward of the second emission surface and rearward of the second front surface. The end surface of the third metal material 723c located near the third emission surface (i.e., the front) may be located forward of the third emission surface and rearward of the second front surface. Here, the second light emitting surface is the end surface of the two end surfaces of the second semiconductor light emitting chip 7302 in the first direction D1 that is closer to the first light emitting surface, and the third light emitting surface is the end surface of the two end surfaces of the third semiconductor light emitting chip 7303 in the first direction D1 that is closer to the first light emitting surface.

[0334] This provides the same effect as in the second embodiment with respect to the light emitted from each semiconductor light emitting chip.

[0335] In the present embodiment, the number of semiconductor light emitting chips is three, but the number of semiconductor light emitting chips may be two, or may be four or more.

[0336] (Embodiment 8) A semiconductor light-emitting device according to embodiment 8 will be described. The semiconductor light-emitting device according to this embodiment differs from semiconductor light-emitting device 401 according to embodiment 4 in that the semiconductor light-emitting chip is a semiconductor laser diode array chip having a plurality of optical waveguides. The semiconductor light-emitting device according to this embodiment will be described below with reference to FIG. 44, focusing on the differences from semiconductor light-emitting device 401 according to embodiment 4.

[0337] FIG. 44 is a schematic cross-sectional view showing the overall configuration of a semiconductor light-emitting device 801 according to this embodiment.

[0338] As shown in FIG. 44, a semiconductor light emitting device 801 according to the present embodiment includes a semiconductor light emitting chip 830, a first submount 310, a second submount 420, a first sidewall 40, and a second sidewall 50.

[0339] 44, the semiconductor light-emitting chip 830 differs from the semiconductor light-emitting chip 30 according to the fourth embodiment in that it has a plurality of optical waveguides, but is the same in other respects. In this embodiment, the semiconductor light-emitting chip 830 has five optical waveguides WG1 to WG5.

[0340] With this configuration, multiple beams of light can be emitted from one semiconductor light-emitting chip, thereby realizing a small, high-output semiconductor light-emitting device 801. Furthermore, by sandwiching the semiconductor light-emitting chip 830 between the first submount 310 and the second submount 420, warping of the semiconductor light-emitting chip 830 due to differences in the linear expansion coefficients can be suppressed.

[0341] (Variations, etc.) Although the semiconductor light emitting device according to the present disclosure has been described above based on the respective embodiments, the present disclosure is not limited to the above-described respective embodiments.

[0342] For example, although the above-described embodiments have been described with reference to examples in which the semiconductor light-emitting chip is a semiconductor laser diode chip, the semiconductor light-emitting chip is not limited to a semiconductor laser diode chip, and may be, for example, a quantum cascade laser diode or a superluminescent diode.

[0343] The spacer may also be made of a material other than a metal material, for example, an insulating material.

[0344] Furthermore, the functional element such as the Zener diode 660 included in the semiconductor light-emitting device 601 according to the sixth embodiment may also be included in semiconductor light-emitting devices according to other embodiments and modifications. For example, if the semiconductor light-emitting device 101 according to the second embodiment includes a Zener diode, the functional element such as the Zener diode 660 may be disposed on the fifth surface 29b and electrically connected to the fifth metal material 25 and the sixth metal material 26. The functional element is not limited to a light-receiving element, a thermistor, or a Zener diode, but may also be other elements such as a transistor or a capacitor. The semiconductor light-emitting device may also include multiple functional elements. The semiconductor light-emitting device may also include multiple different functional elements. The metal materials used for electrical wiring may differ depending on the type and number of functional elements. The second submount itself may also function as a functional element.

[0345] This disclosure also includes forms obtained by applying various modifications to the above-mentioned embodiments that a person skilled in the art would conceive, and forms realized by arbitrarily combining the components and functions of the above-mentioned embodiments within the scope of the present disclosure. [Industrial Applicability]

[0346] The semiconductor light-emitting device of the present disclosure can be applied as a high-output, high-efficiency light source to, for example, projectors, welding laser devices, processing laser devices, automotive headlamp devices, LiDAR (Light Detection And Ranging) devices, analytical devices, inspection devices, endoscope laser devices, optical communication laser devices, and optical amplifiers for optical fiber communication. [Explanation of symbols]

[0347] 1, 1a, 101, 101a, 101b, 101c, 101d, 301, 301a, 301b, 401, 501, 601, 701, 801 Semiconductor light-emitting device 9 Heat dissipation material 9b Second heat dissipation member 10, 110, 310, 310b, 510, 710 1st submount 11, 111, 311, 311b, 511, 711a, 711b, 711c spacers 11F, 23F, 23R, 24F, 24R, 40F, 40R, 50F, 50R, 111F, 111R, 112F, 112R, 311F, 311R, 312F, 312R End face 12, 112, 312, 312b, 512, 712 2nd metal material 16 Second bonding material 17, 317, 427, 517, 717, 727 Back metal material 18, 28, 48, 48a, 48b, 48c, 58, 85b, 185b, 528, 578, 585, R2, R3 Bonding material 19, 319, 519, 719 First Foundation 19a, 319a, 519a, 719a 3rd surface 19b, 319b Back surface 19F 1st front 19M Base material 19R 1st rear side 23, 523, 623, 723a, 723b, 723c Third metal material 24, 524, 624, 724 4th metal material 25 5th metal material 26 6th metal material 29, 429, 529, 629, 729 Second Foundation 29a, 429a, 529a, 629a, 729a 4th surface 29b, 429b, 529b, 629b, 729b 5th surface 29F 2nd front 29R 2nd rear 30,830 Semiconductor light-emitting chip 30a 1st surface 30b 2nd surface 30e Light-emitting point 30F exit surface 30R rear 31 1st electrode 32 2nd electrode 39 Laminate 40, 740a, 740b, 740c 1st side wall 50 Second side wall 80, 580 lens optical elements 80a entrance plane 85, 185 joint 85a, 85c, 185a, 185c Bonding pre-film 91 Metal Wire 99 Jig 102, 202, 302, 302b, 402, 502 Light source device 111c, 311c First recess 111d, 311d Third recess 112c, 312c Second recess 112d, 312d 4th recess 120, 420, 520, 620, 720 Second submount 181, 181b First optical element 182 Second optical element 182c, R1 encapsulant 205, 505 base plate 206, 506 frame 209, 309 Mounting table 282 slow axis collimator lens 283 Reflective Mirror 284 Condenser Lens 285 Optical Fiber 286, 586 Optical fiber holding member 292, 392 Wiring materials 308 Auxiliary Plate 308c Notch 308h opening 308w solder sheet 309h screw hole 311c1 First inner recess 311d1 Third inner recess 312c1 Second inner recess 312d1 4th inner recess 523a Lower electrode 523b 8th metal material 523c 9th metal material 560 Thermistor 570 Photodetector 581 cores 582 Clad 660 Zener diode 7301 First semiconductor light-emitting chip 7302 Second semiconductor light-emitting chip 7303 Third Semiconductor Light Emitting Chip B1 First via B2 2nd via CL Colette E04 4th electrode E05 5th electrode E07 7th electrode E08 8th electrode E09 9th electrode E10 10th electrode JG jig LP01, LP02, LP03, LP04, LP05, LP06, LP07, LP08, LP09, LP10 lead pins LP1 First lead pin LP2 Second lead pin WG, WG1, WG2, WG3, WG4, WG5 Optical waveguide θf divergence angle

Claims

1. a first submount; a first semiconductor light emitting chip disposed on the first submount; a second submount; and a first sidewall and a second sidewall connected to the second submount; The first semiconductor light emitting chip includes: a first surface; and a second surface opposite to the first surface; a first optical waveguide extending in a first direction parallel to the first surface and disposed closer to the first surface than the second surface; a first exit surface that is one of side surfaces connecting the first surface and the second surface and intersects with the first direction, and that emits output light in the first direction; The first submount is a first base having a third surface; a spacer disposed on the third surface; the first semiconductor light emitting chip is bonded to the first submount such that the first surface faces the spacer; the first emission surface is located forward along a traveling direction of the emitted light with respect to one of two end surfaces of the spacer in the first direction that is closer to the first emission surface, a first front surface, which is an end surface of the first base closer to the first exit surface, of the two end surfaces in the first direction of the first base, is located forward of the first exit surface along a traveling direction of the emitted light, the second submount is disposed on the second surface; The second submount is a second base having a fourth surface; a third metal material disposed on the fourth surface; the second surface faces the third metal material; the first sidewall and the second sidewall are parallel to the first surface and are arranged in a second direction perpendicular to the first direction; the first semiconductor light emitting chip is disposed between the first sidewall and the second sidewall; the first sidewall includes a first metal pillar; the second sidewall includes a second metal pillar; the first submount has a second metallic material disposed on the third surface; the first metal pillar is electrically connected to the second metal material; When viewed from above on the third surface, the spacer and the second metal material protrude from the second submount in the second direction. Semiconductor light-emitting device.

2. A semiconductor light emitting device, a first submount; a first semiconductor light emitting chip disposed on the first submount; a second submount; The first semiconductor light emitting chip includes: a first surface; and a second surface opposite to the first surface; a first optical waveguide extending in a first direction parallel to the first surface and disposed closer to the first surface than the second surface; a first exit surface that is one of side surfaces connecting the first surface and the second surface and intersects with the first direction, and that emits output light in the first direction; The first submount is a first base having a third surface; a spacer disposed on the third surface; the first semiconductor light emitting chip is bonded to the first submount such that the first surface faces the spacer; the first emission surface is located forward along a traveling direction of the emitted light with respect to one of two end surfaces of the spacer in the first direction that is closer to the first emission surface, a first front surface, which is an end surface of the first base closer to the first exit surface, of the two end surfaces in the first direction of the first base, is located forward of the first exit surface along a traveling direction of the emitted light, the second submount is disposed on the second surface; The second submount is a second base having a fourth surface; a third metal material disposed on the fourth surface; the second surface faces the third metal material; a second front surface, which is one of the two end surfaces of the second base in the first direction closer to the first exit surface, is located forward of the first exit surface along a traveling direction of the emitted light, The semiconductor light emitting device is a light-transmitting member disposed on the first front surface and the second front surface; a first sidewall and a second sidewall parallel to the first surface and arranged in a second direction perpendicular to the first direction; a third side wall; the first base has a first rear surface facing away from the first front surface, the second base has a second rear surface facing away from the second front surface, the third side wall is disposed on the first rear surface and the second rear surface; the first semiconductor light emitting chip is disposed between the first sidewall and the second sidewall; The first semiconductor light emitting chip is hermetically sealed by the first submount, the second submount, the light-transmitting member, the first sidewall, the second sidewall, and the third sidewall. Semiconductor light-emitting device.

3. A semiconductor light emitting device, a first submount; a first semiconductor light emitting chip disposed on the first submount; a second submount; The first semiconductor light emitting chip includes: a first surface; and a second surface opposite to the first surface; a first optical waveguide extending in a first direction parallel to the first surface and disposed closer to the first surface than the second surface; a first exit surface that is one of side surfaces connecting the first surface and the second surface and intersects with the first direction, and that emits output light in the first direction; The first submount is a first base having a third surface; a spacer disposed on the third surface; the first semiconductor light emitting chip is bonded to the first submount such that the first surface faces the spacer; the first emission surface is located forward along a traveling direction of the emitted light with respect to one of two end surfaces of the spacer in the first direction that is closer to the first emission surface, a first front surface, which is an end surface of the first base closer to the first exit surface, of the two end surfaces in the first direction of the first base, is located forward of the first exit surface along a traveling direction of the emitted light, the second submount is disposed on the second surface; The second submount is a second base having a fourth surface; a third metal material disposed on the fourth surface; the second surface faces the third metal material; the first semiconductor light emitting chip has a first electrode; the second base has a fifth surface opposite to the fourth surface; the second submount has a fifth metallic material disposed on the fifth surface; the first electrode is electrically connected to the fifth metal material; The semiconductor light emitting device includes a functional element disposed on the fifth surface. Semiconductor light-emitting device.

4. The spacer is a first metal material made of a metal material.

4. The semiconductor light emitting device according to claim 1.

5. the first semiconductor light emitting chip has a first electrode; the first electrode has the first surface; The first electrode and the spacer are electrically connected. The semiconductor light emitting device according to claim 4 .

6. the first semiconductor light emitting chip has a second electrode; the second electrode has the second surface; the first submount has a second metallic material disposed on the third surface; The second electrode and the second metal material are electrically connected to each other. The semiconductor light emitting device according to claim 5 .

7. a first sidewall and a second sidewall connected to the second submount; the first sidewall and the second sidewall are parallel to the first surface and are arranged in a second direction perpendicular to the first direction; The first semiconductor light emitting chip is disposed between the first sidewall and the second sidewall.

7. The semiconductor light emitting device according to claim 1.

8. The end face of the third metal material that is closer to the first light exit surface than the two end faces in the first direction is located forward of the first light exit surface along the traveling direction of the emitted light.

4. The semiconductor light emitting device according to claim 1.

9. the first semiconductor light emitting chip has a second electrode; the second electrode has the second surface; The second electrode and the third metal material are electrically connected to each other.

9. The semiconductor light emitting device according to claim 1.

10. the first semiconductor light emitting chip has a second electrode; The second metal material and the second electrode are electrically connected. The semiconductor light emitting device according to claim 1 .

11. The first metal pillar is electrically connected to the third metal material. The semiconductor light emitting device according to claim 1 or 10.

12. the second submount has a fourth metal material disposed on the fourth surface; The second metal pillar is electrically connected to the fourth metal material.

12. The semiconductor light emitting device according to claim 1, 10, or 11.

13. The second metal pillar is electrically connected to the spacer.

13. The semiconductor light emitting device according to claim 1, 10 or 12.

14. the first semiconductor light emitting chip has a second electrode; the second submount has a sixth metal material disposed on the fifth surface; The second electrode is electrically connected to the sixth metal material. The semiconductor light emitting device according to claim 3 .

15. The first front surface and the second front surface are in the same plane. The semiconductor light emitting device according to claim 2 .

16. the first semiconductor light emitting chip has a third rear surface facing away from the first light emitting surface; the first base has a first rear surface; the second base has a second rear surface; the first rear surface is one of two end surfaces of the first base in the first direction that is closer to the third rear surface, the second rear surface is one of two end surfaces of the second base in the first direction that is closer to the third rear surface, the third rear surface is located forward of the first rear surface along the traveling direction of the emitted light, The third rear surface is located forward of the second rear surface along the traveling direction of the emitted light. The semiconductor light emitting device according to any one of claims 1 to 15.

17. the second submount has a sixth metal material disposed on the fifth surface; The functional element is electrically connected to the fifth metal material and the sixth metal material. The semiconductor light emitting device according to claim 3 .

18. a second semiconductor light emitting chip disposed on the first submount; The second semiconductor light emitting chip is a sixth surface parallel to the first direction; a seventh surface opposite to the sixth surface; a second optical waveguide extending in the first direction and disposed closer to the sixth surface than the seventh surface; the first submount has a seventh metal material disposed on the third surface; the spacer and the seventh metal material are electrically insulated from each other; the second semiconductor light emitting chip is bonded to the first submount such that the sixth surface faces the seventh metal material; the second submount has a fourth metal material disposed on the fourth surface; the seventh surface is connected to the fourth metallic material; The sixth surface is electrically connected to the seventh metallic material. The semiconductor light emitting device according to any one of claims 1 to 17.

19. the second semiconductor light emitting chip has a second light emitting surface; the second light emitting surface is one of two end surfaces of the second semiconductor light emitting chip in the first direction that is closer to the first light emitting surface, the second base has a second front surface; the second front surface is one of two end surfaces of the second base in the first direction that is closer to the first emission surface, the second light exit surface is located forward along a traveling direction of the emitted light with respect to one of two end surfaces of the seventh metal material in the first direction that is closer to the second light exit surface, Of the two end faces of the fourth metal material in the first direction, the end face closer to the second light exit surface is located forward of the second light exit surface along the traveling direction of the emitted light, and is located rearward of the second front surface along the traveling direction of the emitted light.

19. The semiconductor light emitting device according to claim 18.

20. a functional element disposed on the fourth surface; the second submount is disposed on the fourth surface and has an eighth metal material and a ninth metal material that are electrically insulated from the third metal material and the fourth metal material, The functional element is electrically connected to the eighth metal material and the ninth metal material. The semiconductor light emitting device according to claim 12.

21. an optical element connected to the first submount and the second submount; The semiconductor light emitting device according to any one of claims 1 to 20.

22. The distance in the first direction between the first front surface and the first light exit surface is 13 μm or more and 200 μm or less, and the thickness of the spacer is 10 μm or more and 163 μm or less. The semiconductor light emitting device according to any one of claims 1 to 21.

23. The first semiconductor light emitting chip is a semiconductor laser chip or a superluminescent diode. The semiconductor light emitting device according to any one of claims 1 to 22.

24. The first base includes an insulating material. The semiconductor light emitting device according to any one of claims 1 to 23.

25. The spacer has a first recess recessed inward of the spacer at an edge closer to the first light exit surface out of two edges of the spacer in the first direction when viewed from above on the third surface. The semiconductor light emitting device according to any one of claims 1 to 24.

26. The second metal material has a second recess recessed inward of the second metal material at an edge closer to the first light exit surface out of two edges of the second metal material in the first direction when viewed from above on the third surface. The semiconductor light emitting device according to claim 1 or 10.

27. The first submount further includes an auxiliary plate bonded to the first submount. The semiconductor light emitting device according to any one of claims 1 to 26.

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