Semiconductor device and manufacturing method thereof

Abstract

To enhance manufacturing efficiency of a semiconductor device for efficiently cooling a semiconductor element.SOLUTION: A semiconductor device includes a semiconductor package sealed with a resin so that a heat dissipation layer is exposed to at least one main surface, and a heat dissipation member joined to the heat dissipation layer, in which at least one of the semiconductor package and the heat dissipation member has a recess on a surface contacting the other of the semiconductor package and the heat dissipation member, and the recess is provided with a joining member for joining the heat dissipation layer and the heat dissipation member.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to a semiconductor device and a method for manufacturing the semiconductor device. [Background technology]

[0002] Power conversion devices using power semiconductor elements, such as IGBTs (Insulated Gate Bipolar Transistors), have come into use in recent years, and there is a demand for efficient cooling of these power semiconductor elements.

[0003] Patent Document 1 describes a double-sided cooling semiconductor device in which a semiconductor element, the top and bottom surfaces of an insulating substrate, and a water-cooled cooler (heat dissipation member) are joined together with plate solder (jointing member).

[0004] Patent Document 2 discloses a solder plate (joining member) in which metal particles are dispersed inside in order to maintain a uniform distance between members. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Publication No. 2019-037047 [Patent Document 2] Japanese Patent Application Laid-Open No. 2013-099789 Summary of the Invention [Problem to be solved by the invention]

[0006] In order to efficiently cool semiconductor elements, it is necessary to bond the insulating substrate on which the semiconductor elements are mounted to the heat dissipation member so that heat can be transferred sufficiently between them. To achieve sufficient heat transfer between the insulating substrate on which the semiconductor elements are mounted and the heat dissipation member, it is necessary to attach the bonding member with high positional accuracy and to ensure that the distance between the insulating substrate and the bonding member is uniform.

[0007] Patent Document 1 does not describe a specific method for mounting the solder plate (joining member) or a method for correcting the tilt of the joining member.

[0008] The invention described in Patent Document 2 is concerned about the possibility of tilting due to inability to maintain dispersibility during bonding. Note that the invention described in Patent Document 2 cannot address misalignment of bonding members.

[0009] The present disclosure aims to improve the manufacturing efficiency of semiconductor devices that efficiently cool semiconductor elements. [Means for solving the problem]

[0010] According to one aspect of the present disclosure, a semiconductor device is provided, comprising: a semiconductor package sealed with resin so that a heat dissipation layer is exposed on at least one of its main surfaces; and a heat dissipation member bonded to the heat dissipation layer, wherein at least one of the semiconductor package and the heat dissipation member has a recess on the surface that contacts the other of the semiconductor package and the heat dissipation member, and the recess is provided with a bonding member that bonds the heat dissipation layer and the heat dissipation member. [Effects of the Invention]

[0011] According to each embodiment of the present disclosure, it is possible to improve the manufacturing efficiency of a semiconductor device that efficiently cools a semiconductor element. [Brief explanation of the drawings]

[0012] [Figure 1] FIG. 1 is a perspective view of a semiconductor device according to a first embodiment. [Figure 2] FIG. 2 is an exploded perspective view of the semiconductor device of the first embodiment. [Figure 3] FIG. 3 is a perspective view of an insulating substrate of the semiconductor device of the first embodiment. [Figure 4] FIG. 4 is a bottom view of the insulating substrate of the semiconductor device of the first embodiment. [Figure 5] FIG. 5 is a bottom view of the bonding member of the semiconductor device according to the first embodiment. [Figure 6]FIG. 6 is a diagram illustrating the assembly of the semiconductor device of the first embodiment. [Figure 7] FIG. 7 is a diagram illustrating the assembly of the semiconductor device of the first embodiment. [Figure 8] FIG. 8 is a perspective view of a modified example of the insulating substrate of the semiconductor device of the first embodiment. [Figure 9] FIG. 9 is a bottom view of a modified insulating substrate of the semiconductor device of the first embodiment. [Figure 10] FIG. 10 is a bottom view of a modified example of the bonding member of the semiconductor device of the first embodiment. [Figure 11] FIG. 11 is a diagram illustrating the assembly of the semiconductor device according to the second embodiment. [Figure 12] FIG. 12 is a diagram illustrating the assembly of the semiconductor device according to the second embodiment. [Figure 13] FIG. 13 is a top view of the heat dissipation member of the semiconductor device according to the second embodiment. [Figure 14] FIG. 14 is a top view of a heat dissipation member of a modified example of the semiconductor device of the second embodiment. [Figure 15] FIG. 15 is a diagram illustrating the assembly of the semiconductor device according to the third embodiment. [Figure 16] FIG. 16 is a diagram illustrating the assembly of the semiconductor device according to the third embodiment. [Figure 17] FIG. 17 is a diagram illustrating the assembly of the semiconductor device according to the fourth embodiment. [Figure 18] FIG. 18 is a diagram illustrating the assembly of the semiconductor device according to the fourth embodiment. [Figure 19] FIG. 19 is a diagram illustrating the assembly of the semiconductor device according to the fourth embodiment. [Figure 20] FIG. 20 is a diagram illustrating the assembly of the semiconductor device according to the fourth embodiment. [Figure 21] FIG. 21 is a diagram for explaining the assembly of the semiconductor device of the reference example. DETAILED DESCRIPTION OF THE INVENTION

[0013] Hereinafter, each embodiment of the present invention will be described with reference to the accompanying drawings. Note that in the description of each embodiment and in the drawings, components having substantially the same or corresponding functional configurations may be designated by the same reference numerals, and redundant description may be omitted. For ease of understanding, the scale of each part in the drawings may differ from the actual scale. Directions such as parallel, right-angled, orthogonal, horizontal, vertical, up / down, left / right, etc., are permitted to a degree that does not impair the effects of the embodiments. The shape of corners is not limited to right angles and may be rounded like an arch. Parallel, right-angled, orthogonal, horizontal, and vertical may include approximately parallel, approximately right-angled, approximately orthogonal, approximately horizontal, and approximately vertical.

[0014] <<First Embodiment>> <Semiconductor device 1> <Configuration of Semiconductor Device 1> Fig. 1 is a perspective view of a semiconductor device 1 according to a first embodiment, and Fig. 2 is an exploded perspective view of the semiconductor device 1 according to the first embodiment.

[0015] For ease of explanation, an XYZ Cartesian coordinate system may be used in the figures. For coordinate axes perpendicular to the plane of the drawing, a cross in a circle indicates that the direction toward the back of the plane is positive, and a black circle in a circle indicates that the direction toward the front of the plane is positive. However, this coordinate system is defined for the purpose of explanation only and does not limit the orientation of the semiconductor device, etc. In this disclosure, unless otherwise specified, the X axis is defined as a direction parallel to the mounting surface of the heat dissipation member 20, and the Y axis is defined as a direction parallel to the mounting surface of the heat dissipation member 20 and perpendicular to the X axis. The Z axis is defined as a direction perpendicular to the X axis and Y axis. The Z axis direction may also be referred to as the up-down direction. For example, the +Z side may be referred to as the top, and the -Z side may be referred to as the bottom. A plan view viewed from the +Z side may also be referred to as a top view, and a plan view viewed from the -Z side may also be referred to as a bottom view.

[0016] The semiconductor device 1 includes an insulating substrate 10, a heat dissipation member 20, and a bonding member 30. Each of the components will be described below.

[0017] [Insulating substrate 10] The insulating substrate 10 is a substrate on which a semiconductor element is mounted. The insulating substrate 10 includes an insulator layer 12, a wiring layer 14 formed on one surface (the surface on the +Z side) of the insulator layer 12, and a heat dissipation layer 16 formed on the other surface (the surface on the -Z side) of the insulator layer 12.

[0018] (insulator layer 12) The insulator layer 12 is a layer made of an insulator. The insulator layer 12 is made of, for example, ceramic or silicon carbide. The thickness of the insulator layer 12 is, for example, 0.3 mm to 0.6 mm.

[0019] (wiring layer 14) The wiring layer 14 is a layer that forms wiring electrically connected to a mounted semiconductor element. The wiring layer 14 is formed on one main surface of the insulator layer 12. A semiconductor element is mounted on the +Z side surface of the wiring layer 14. Wiring for connecting to the semiconductor element is formed in the wiring layer 14. Note that the wiring pattern of the wiring layer 14 is omitted in the drawings of the present application, such as FIG. 1. The wiring layer 14 is formed of a conductive material, for example, copper. The thickness of the wiring layer 14 is, for example, 0.3 mm to 1 mm.

[0020] (Heat dissipation layer 16) The heat dissipation layer 16 is a layer for dissipating heat from the semiconductor elements stacked on the wiring layer 14 to the outside of the insulating substrate 10. The heat dissipation layer 16 is formed on one main surface of the insulator layer 12. The heat dissipation layer 16 is formed from the same conductive material as the wiring layer 14, for example, copper. The thickness of the heat dissipation layer 16 is, for example, 0.3 mm to 1 mm. Because the heat dissipation layer 16 is formed from a conductive material, it also acts as an electrostatic shield. Note that the heat dissipation layer 16 is desirably formed thick to dissipate heat and prevent warping of the substrate. It is also desirably that the heat dissipation layer 16 and the wiring layer 14 have the same thickness to prevent warping of the substrate.

[0021] The heat dissipation layer 16 has a recess 16a on the -Z side to which a bonding member 30 is attached during assembly. FIG. 3 is a perspective view of the insulating substrate 10 of the semiconductor device 1 of the first embodiment. Specifically, FIG. 3 is a perspective view of the insulating substrate 10 viewed from the -Z side. FIG. 4 is a bottom view of the insulating substrate 10 of the semiconductor device 1 of the first embodiment. The recess 16a is formed so as to recess from a bottom surface 16S of the heat dissipation layer 16 of the insulating substrate 10, where the heat dissipation layer 16 contacts the mounting surface 20S of the heat dissipation member 20, toward the insulator layer 12 (+Z side). The bonding member 30 is attached to the recess 16a during assembly of the semiconductor device 1. The recess 16a has a substantially rectangular shape with a width W16a and a height H16a when viewed from the bottom. The depth of the recess 16a from the bottom surface 16S is constant at a depth D16a (see FIG. 6). The shape of the recess 16a in a plan view (bottom view) is not limited to a substantially rectangular shape. For example, the shape of the recess 16a in a plan view (bottom view) may be circular, elliptical, or polygonal. The corners of the recess 16a may be chamfered or fillets may be provided. The depth of the recess 16a may also not be constant. The shape of the recess 16a may be determined appropriately depending on the location of heat generation in the insulating substrate 10, etc.

[0022] [Heat dissipation member 20] The heat dissipation member 20 is a member that dissipates heat from the insulating substrate 10 to the outside. The heat dissipation member 20 is, for example, a heat dissipation plate made of metal or a liquid-cooled cooler with a cooling liquid flowing inside (see, for example, heat dissipation members 320 and 321 in FIG. 18 ). The heat dissipation layer 16 of the insulating substrate 10 is joined to the mounting surface 20S of the heat dissipation member 20 via a joining member 30. The heat dissipation member 20 dissipates heat from the insulating substrate 10 by connecting to the heat dissipation layer 16 of the insulating substrate 10 via the joining member 30. By using, for example, a heat dissipation plate made of metal as the heat dissipation member 20, the heat dissipation member 20 transfers heat from the mounting surface to the surface opposite the mounting surface. By making the size of the heat dissipation member 20 larger than that of the insulating substrate 10, the heat dissipation area is increased, improving heat dissipation efficiency and the efficiency of cooling the insulating substrate 10. Furthermore, by using, for example, a liquid-cooled cooler as the heat dissipation member 20, the efficiency of cooling the insulating substrate 10 can be increased by the liquid (for example, water, antifreeze, or coolant liquid) that flows through the inside of the liquid-cooled cooler.

[0023] [Connecting member 30] The bonding member 30 is a member that bonds the heat dissipation layer 16 of the insulating substrate 10 and the heat dissipation member 20. FIG. 5 is a bottom view of the bonding member 30 of the semiconductor device 1 of the first embodiment. The bonding member 30 is attached to the recess 16a of the heat dissipation layer 16 when the semiconductor device 1 is assembled. The bonding member 30 is, for example, a plate solder. The bonding member 30 has a substantially rectangular shape with a width W30 and a height H30 when viewed from below. The thickness of the bonding member 30 is a constant thickness T30 (see FIG. 6). The shape of the bonding member 30 when viewed from below is substantially the same as or slightly larger than the shape of the recess 16a of the heat dissipation layer 16 when viewed from below.

[0024] A specific shape of the joining member 30 will be described. For example, the width W30 of the joining member 30 satisfies the relationship of formula 1. Furthermore, the height H30 of the joining member 30 satisfies the relationship of formula 2. Note that both formulas 1 and 2 may be satisfied, or only one of the formulas may be satisfied. The joining member 30 is slightly larger than the recess 16a because it is attached by fitting into the recess 16a. In other words, the width of the joining member 30 is wider than the recess 16a.

[0025] W30 ≧ W16a (Formula 1) H30 ≧ H16a (Formula 2)

[0026] Furthermore, the thickness of the joining member 30 satisfies the relationship of formula 3.

[0027] 0 ≦ T30 - D16a ≦ 100μm (Formula 3)

[0028] <Method for Assembling Semiconductor Device 1> A description will now be given of a method for assembling (manufacturing) the semiconductor device 1. Figures 6 and 7 are diagrams for explaining the assembly of the semiconductor device 1 of the first embodiment.

[0029] First, as shown in Fig. 6, the bonding member 30 is moved in the direction of arrow A to attach the bonding member 30 to the recess 16a of the heat dissipation layer 16 of the insulating substrate 10 (step of attaching the bonding member). If the shape of the bonding member 30 is slightly larger than the recess 16a of the heat dissipation layer 16 of the insulating substrate 10 in bottom view, when the bonding member 30 is attached to the recess 16a, the bonding member 30 fits into the recess 16a. Therefore, the insulating substrate 10 and the bonding member 30 can be handled as a single unit.

[0030] Next, the insulating substrate 10 with the bonding members 30 attached thereto is placed on the heat dissipation member 20 (a step of placing the insulating substrate on the heat dissipation member). FIG.

[0031] Then, the insulating substrate 10 placed on the heat dissipation member 20 is heated. When the insulating substrate 10 placed on the heat dissipation member 20 is heated, the plate solder, which is the joining member 30 attached to the insulating substrate 10, melts. Next, the insulating substrate 10 placed on the heat dissipation member 20 is cooled. When the insulating substrate 10 placed on the heat dissipation member 20 is cooled, the plate solder, which is the joining member 30 attached to the insulating substrate 10, solidifies. The solidification of the plate solder bonds the insulating substrate 10 and the heat dissipation member 20. As described above, the insulating substrate 10 and the heat dissipation member 20 are bonded together by heating and cooling the insulating substrate 10 placed on the heat dissipation member 20 (step of bonding the insulating substrate and the heat dissipation member).

[0032] Through the above-described steps, the insulating substrate 10 and the heat dissipation member 20 are bonded together using the bonding member 30, thereby manufacturing the semiconductor device 1.

[0033] <Effects and Actions> In the semiconductor device 1 of this embodiment, the heat dissipation layer 16 of the insulating substrate 10 has a recess 16a on its lower surface 16S that comes into contact with the heat dissipation member 20, and a bonding member 30 is attached to the recess 16a. By attaching the bonding member 30 to the recess 16a, the bonding member 30 can be positioned when attaching the insulating substrate 10 to the heat dissipation member 20. Furthermore, by having the lower surface 16S of the heat dissipation layer 16 in contact with the mounting surface 30S, tilt of the insulating substrate 10 with respect to the heat dissipation member 20 can be suppressed.

[0034] Here, a reference example for comparison will be described. Figure 21 is a diagram for explaining the assembly of a semiconductor device 1z of the reference example.

[0035] The semiconductor device 1z of the reference example includes an insulating substrate 10z, a heat dissipation member 20z, and a bonding member 30z. Here, as an example, a semiconductor element 50z is bonded to the insulating substrate 10z via a bonding layer 40z.

[0036] The semiconductor device 1z requires alignment when bonding the insulating substrate 10z to the heat dissipation member 20z using the bonding member 30z. In the semiconductor device 1z of the reference example, alignment frames 81z and 82z are used for alignment. Since the alignment frames 81z and 82z must take into account component tolerances, the alignment frames 81z and 82z must be made larger. Therefore, when alignment is performed using the alignment frames 81z and 82z, the accuracy of the alignment deteriorates. Furthermore, the alignment frames 81z and 82z must be made with high accuracy, which increases manufacturing costs. Furthermore, the use and management of the alignment frames 81z and 82z requires man-hours. Furthermore, it takes time to perform alignment.

[0037] In the semiconductor device 1 of this embodiment, the joining member 30 fits into the recess 16a, allowing the joining member 30 to be positioned with high precision. Furthermore, since positioning can be performed using the components that make up the semiconductor device 1, it is possible to eliminate the need for jigs such as alignment frames. Eliminating jigs and the like reduces the time and management costs required for manufacturing. Furthermore, by providing the recess 16a on the lower surface 16S of the heat dissipation layer 16 that comes into contact with the heat dissipation member 20, it is possible to reduce the tilt between the insulating substrate 10 and the heat dissipation member 20. As described above, the semiconductor device 1 allows the manufacture of a semiconductor device that efficiently cools semiconductor elements while improving manufacturing efficiency.

[0038] <Modifications of insulating substrate and bonding member> The shape of the recesses of the insulating substrate is not limited to the shape of recess 16a of insulating substrate 10. For example, an insulating substrate may have a plurality of recesses. Here, an insulating substrate 10A having two recesses will be described. FIG. 8 is a perspective view of insulating substrate 10A, which is a modified example of insulating substrate 10 of semiconductor device 1 of the first embodiment. FIG. 9 is a bottom view of insulating substrate 10A, which is a modified example of insulating substrate 10 of semiconductor device 1 of the first embodiment. Also, FIG. 10 is a bottom view of bonding members 30A1 and 30A2, which are modified examples of bonding member 30 of semiconductor device 1 of the first embodiment.

[0039] [Insulating substrate 10A] The insulating substrate 10A is a substrate on which a semiconductor element is mounted. The insulating substrate 10A includes an insulator layer 12, a wiring layer 14 formed on one surface (the surface on the +Z side) of the insulator layer 12, and a heat dissipation layer 16A formed on the other surface (the surface on the -Z side) of the insulator layer 12. The insulator layer 12 and the wiring layer 14 are the same as the insulator layer 12 and the wiring layer 14 of the insulating substrate 10, respectively.

[0040] (Heat dissipation layer 16A) The heat dissipation layer 16A has recesses 16Aa1 and 16Aa2 on the -Z side, into which bonding members 30A1 and 30A2 are attached during assembly. The recesses 16Aa1 and 16Aa2 are recessed toward the insulator layer 12 from the lower surface 16AS, where the heat dissipation layer 16A of the insulating substrate 10 contacts the mounting surface 20S of the heat dissipation member 20. The bonding member 30A1 is attached to the recess 16Aa1 during assembly of the semiconductor device. The bonding member 30A2 is attached to the recess 16Aa2 during assembly of the semiconductor device. The recesses 16Aa1 and 16Aa2 are generally rectangular. The bonding member 30A1 has substantially the same shape as the recess 16Aa1 when viewed from below, or is slightly larger than the shape of the recess 16a when viewed from below.

[0041] <<Second embodiment>> <Semiconductor device 101> <Configuration of semiconductor device 101> The semiconductor device 101 of the second embodiment differs from the semiconductor device 1 of the first embodiment in the material in which the recesses are formed. Specifically, the recesses are formed in the heat dissipation member 120 of the semiconductor device 101.

[0042] The semiconductor device 101 includes an insulating substrate 110, a heat dissipation member 120, and a bonding member 130 (see FIG. 12). The bonding member 130 is the same member as the bonding member 30. Components different from those in the first embodiment will be described.

[0043] [Insulating substrate 110] The insulating substrate 110 includes an insulator layer 112, a wiring layer 114 formed on one surface (the surface on the +Z side) of the insulator layer 112, and a heat dissipation layer 116 formed on the other surface (the surface on the -Z side) of the insulator layer 112. The insulator layer 112 and the wiring layer 114 have the same configurations as the insulator layer 12 and the wiring layer 14, respectively. Therefore, a description of the insulator layer 112 and the wiring layer 114 will be omitted. The heat dissipation layer 116 does not have a recess 16a compared to the heat dissipation layer 16, and the surface on the -Z side of the heat dissipation layer 116 is flat.

[0044] [Heat dissipation member 120] FIG. 13 is a top view of a heat dissipation member 120 of a semiconductor device 101 according to the second embodiment. The heat dissipation member 120 has a recess 120a. A bonding member 130 is attached to the recess 120a. The heat dissipation member 120 is, for example, a heat dissipation plate made of metal or a liquid-cooled cooler through which a coolant flows. Note that the recess 120a according to the second embodiment has a shape similar to that of the recess 16a according to the first embodiment. The shape of the recess 120a is not limited to the shape shown in FIG. 13, similar to that of the recess 16a.

[0045] <Method of Assembling Semiconductor Device 101> A description will now be given of a method for assembling (manufacturing) the semiconductor device 1. Figures 11 and 12 are diagrams for explaining the assembly of the semiconductor device 101 of the second embodiment.

[0046] 11, the joining member 130 is moved in the direction of arrow B to attach the joining member 130 to the recess 120a of the heat dissipation member 120 (step of attaching the joining member). If the shape of the joining member 130 is slightly larger than the recess 120a of the heat dissipation member 120 in a top view, when the joining member 130 is attached to the recess 120a, the joining member 130 fits into the recess 120a. Therefore, the heat dissipation member 120 and the joining member 130 can be handled as a single unit.

[0047] Next, the insulating substrate 110 is placed on the heat dissipation member 120 to which the bonding members 130 have been attached (a step of placing the insulating substrate on the heat dissipation member). FIG.

[0048] Then, the insulating substrate 110 placed on the heat dissipation member 120 is heated. When the insulating substrate 110 placed on the heat dissipation member 120 is heated, the plate solder, which is the joining member 130 attached to the heat dissipation member 120, melts. Next, the insulating substrate 110 placed on the heat dissipation member 120 is cooled. When the insulating substrate 110 placed on the heat dissipation member 120 is cooled, the plate solder, which is the joining member 130 attached to the heat dissipation member 120, solidifies. When the plate solder solidifies, the insulating substrate 110 and the heat dissipation member 120 are joined. As described above, the insulating substrate 110 and the heat dissipation member 120 are joined by heating and cooling the insulating substrate 110 placed on the heat dissipation member 120 (step of joining the insulating substrate and the heat dissipation member).

[0049] Through the above-described steps, the insulating substrate 110 and the heat dissipation member 120 are bonded together using the bonding member 130 to manufacture the semiconductor device 101.

[0050] <Effects and Actions> In the semiconductor device 101 of this embodiment, the heat dissipation member 120 has a recess 120a in a mounting surface 120S that contacts the heat dissipation layer 116 of the insulating substrate 110, and a bonding member 30 is attached to the recess 120a. By attaching the bonding member 30 to the recess 120a, it is possible to position the bonding member 30 when attaching the insulating substrate 110 to the heat dissipation member 120. Furthermore, since the lower surface of the heat dissipation layer 116 contacts the mounting surface 130S, tilt of the insulating substrate 110 with respect to the heat dissipation member 120 can be suppressed.

[0051] <Modifications of heat dissipation member and joining member> The shape of the recesses in the heat dissipation member is not limited to the shape of recesses 120a in heat dissipation member 120. For example, the heat dissipation member may have multiple recesses. The shape of the recesses may also be circular or elliptical, or may be polygonal, such as triangular or pentagonal.

[0052] Here, a heat dissipation member 120A having two recesses will be described. Fig. 14 is a top view of a heat dissipation member 120 that is a modified example of the heat dissipation member 120 of the semiconductor device 101 of the second embodiment. It is assumed that the shapes of the recesses 120Aa1 and 120Aa2 of the heat dissipation member 120 are the same as the recesses 16Aa1 and 16Aa2 of the modified example of the first embodiment. Therefore, bonding members 30A1 and 30A2 are used as bonding members.

[0053] [Heat dissipation member 120A] The heat dissipation member 120A has recesses 120Aa1 and 120Aa2 on the +Z side, to which bonding members 30A1 and 30A2 are attached during assembly. The recesses 120Aa1 and 120Aa2 are each formed to be recessed from the mounting surface 120S on which the insulating substrate 10 of the heat dissipation member 120 is placed. The bonding member 30A1 is attached to the recess 120Aa1 during assembly of the semiconductor device. The bonding member 30A2 is attached to the recess 120Aa2 during assembly of the semiconductor device.

[0054] <<Third Embodiment>> <Semiconductor device 201> <Configuration of semiconductor device 201> The semiconductor device 201 of the second embodiment differs from the semiconductor device 1 of the first embodiment in the material in which the recess is formed. Specifically, the recess is formed in the sealing resin 260 that seals the insulating substrate 210.

[0055] The semiconductor device 201 includes an insulating substrate 210, a heat dissipation member 220, a bonding member 230, a bonding layer 240, a semiconductor element 250, and a sealing resin 260 (see FIG. 16). A package in which the insulating substrate 210, the bonding layer 240, and the semiconductor element 250 are resin-sealed with the sealing resin 260 is called a semiconductor package 270 (see FIG. 15). The heat dissipation member 220 has the same configuration as the heat dissipation member 20. Components and portions that differ from the first embodiment will be described.

[0056] [Insulating substrate 210] The insulating substrate 210 includes an insulator layer 212, a wiring layer 214 formed on one surface (the surface on the +Z side) of the insulator layer 212, and a heat dissipation layer 216 formed on the other surface (the surface on the -Z side) of the insulator layer 212 (see FIG. 15). The insulator layer 212 and the wiring layer 214 have the same configurations as the insulator layer 12 and the wiring layer 14, respectively. Therefore, a description of the insulator layer 112 and the wiring layer 114 will be omitted. The -Z side surface of the heat dissipation layer 116 is flat.

[0057] [Connecting member 230] The joining member 230 is a member that joins the heat dissipation layer 216 of the insulating substrate 210 and the heat dissipation member 220. The joining member 230 has the same shape as the recess 260a, which will be described later.

[0058] [Joining layer 240] The bonding layer 240 bonds the wiring layer 214 and the semiconductor element 250. The bonding layer 240 is formed, for example, by melting and solidifying a solder plate.

[0059] [Semiconductor element 250] The semiconductor element 250 is, for example, a semiconductor element such as a power semiconductor element used in a power conversion device, etc. The semiconductor element 250 is bonded to the wiring layer 214 of the insulating substrate 210 via the bonding layer 240.

[0060] [Sealing resin 260] The sealing resin 260 seals the insulating substrate 210 to which the semiconductor element 250 is bonded. A recess 260a is formed in the sealing resin 260 so as to be recessed from a lower surface 260S that comes into contact with the heat dissipation member 220. The heat dissipation layer 216 is exposed from the recess 260a. Note that the recess 260a is formed so that at least a portion thereof is included in the heat dissipation layer 216 when viewed from the lower surface 260S that comes into contact with the heat dissipation member 220.

[0061] [Semiconductor Package 270] The semiconductor package 270 includes an insulating substrate 210, a bonding layer 240, a semiconductor element 250, and a sealing resin 260. The semiconductor package 270 is a package in which the insulating substrate 210, the bonding layer 240, and the semiconductor element 250 are resin-sealed with the sealing resin 260. The semiconductor package 270 has a recess 260a formed in the sealing resin 260, thereby sealing the insulating substrate 210 with the resin so that the heat dissipation layer 216 of the insulating substrate 210 is exposed on at least one main surface (the lower surface 260S).

[0062] <Method of Assembling the Semiconductor Device 201> A description will now be given of a method for assembling (manufacturing) the semiconductor device 201. Figures 15 and 16 are diagrams for explaining the assembly of the semiconductor device 201 of the third embodiment.

[0063] 15, the bonding member 230 is moved in the direction of arrow C to attach the bonding member 230 to the recess 260a of the sealing resin 260 (step of attaching the bonding member). If the shape of the bonding member 230 is slightly larger than the recess 260a of the sealing resin 260 in a top view, when the bonding member 230 is attached to the recess 260a, the bonding member 230 fits into the recess 260a. Therefore, the sealing resin 260 that seals the insulating substrate 210 and the bonding member 230 can be handled as a single unit.

[0064] Next, the insulating substrate 210 sealed with the sealing resin 260 to which the bonding members 230 are attached is placed on the heat dissipation member 220 (step of placing the insulating substrate on the heat dissipation member). Fig. 16 is a diagram showing the state in which the insulating substrate 210 sealed with the sealing resin 260 to which the bonding members 230 are attached is placed on the heat dissipation member 220.

[0065] Then, insulating substrate 210 placed on heat dissipation member 220 is heated. When insulating substrate 210 placed on heat dissipation member 220 is heated, plate solder, which is joining member 230 attached to heat dissipation member 220, melts. Next, insulating substrate 210 placed on heat dissipation member 220 is cooled. When insulating substrate 210 placed on heat dissipation member 220 is cooled, plate solder, which is joining member 230 attached to heat dissipation member 220, solidifies. When the plate solder solidifies, insulating substrate 210 and heat dissipation member 220 are joined. As described above, insulating substrate 210 and heat dissipation member 220 are joined by heating and cooling insulating substrate 210 placed on heat dissipation member 220 (step of joining insulating substrate and heat dissipation member).

[0066] Through the above-described steps, the insulating substrate 210 and the heat dissipation member 220 are bonded together using the bonding member 230 to manufacture the semiconductor device 201 .

[0067] <Effects and Actions> In the semiconductor device 201 of this embodiment, the semiconductor package 270 has a recess 260a on its bottom surface 260S that comes into contact with the heat dissipation member 220, and the bonding member 230 is attached to the recess 260a. By attaching the bonding member 230 to the recess 260a, the bonding member 230 can be positioned when attaching the semiconductor package 270 to the heat dissipation member 220. Furthermore, by having the bottom surface 260S come into contact with the mounting surface of the heat dissipation member 220, tilting of the semiconductor package 270 with respect to the heat dissipation member 220 can be suppressed.

[0068] In the semiconductor device 201 of the third embodiment, a recess may be provided on the mounting surface of the heat dissipation member 220, as in the heat dissipation member 120 of the second embodiment 101. Also, recesses may be provided in both the semiconductor package 270 and the heat dissipation member 220.

[0069] <<Fourth Embodiment>> <Semiconductor device 301> <Configuration of semiconductor device 301> The semiconductor device 301 of the fourth embodiment differs from the semiconductor device 201 of the third embodiment in that recesses are formed on both sides. Specifically, recesses 360a1 and 360a2 are formed on both sides of the sealing resin 360 that seals the insulating substrate 310.

[0070] Semiconductor device 301 includes insulating substrates 310 and 311, heat dissipation members 320 and 321, bonding members 330 and 333, bonding layers 340 and 341, a semiconductor element 350, and sealing resin 360 (see FIGS. 17 and 18). A package in which insulating substrates 310 and 311, bonding layers 340 and 341, and semiconductor element 350 are sealed with sealing resin 360 is called semiconductor package 370. Components and parts that differ from the third embodiment will be described below.

[0071] [Insulating substrate 310] The insulating substrate 310 includes an insulator layer 312, a wiring layer 314 formed on one surface (the surface on the +Z side) of the insulator layer 312, and a heat dissipation layer 316 formed on the other surface (the surface on the -Z side) of the insulator layer 312 (see FIG. 17). The insulating substrate 310 has the same configuration as the insulating substrate 210.

[0072] [Insulating substrate 311] The insulating substrate 311 includes an insulator layer 313, a wiring layer 315 formed on one surface (the surface on the -Z side) of the insulator layer 313, and a heat dissipation layer 317 formed on the other surface (the surface on the +Z side) of the insulator layer 313 (see FIG. 17). The insulating substrate 311 has the same configuration as the insulating substrate 210.

[0073] [Heat dissipation member 320 and heat dissipation member 321] The heat dissipation member 320 is a member that dissipates heat from the insulating substrate 310 to the outside. Fig. 18 shows, as an example, a liquid-cooled cooler in which a coolant flows through an internal flow path. The heat dissipation member 320 is bonded to the insulating substrate 310 via a bonding member 330.

[0074] The heat dissipation member 321 is a member that dissipates heat from the insulating substrate 311 to the outside. Fig. 18 shows, as an example, a liquid-cooled cooler in which a coolant flows through an internal flow path. The heat dissipation member 321 is joined to the insulating substrate 311 via a joining member 331.

[0075] [Joint member 330 and joint member 331] The joining member 330 is a member that joins the heat dissipation layer 316 of the insulating substrate 310 and the heat dissipation member 320. The joining member 330 has the same shape as a recess 360a, which will be described later.

[0076] The joining member 331 is a member that joins the heat dissipation layer 317 of the insulating substrate 311 to the heat dissipation member 321. The joining member 331 has the same shape as the recess 361a described later.

[0077] [Bonding Layer 340 and Bonding Layer 341] The bonding layer 340 bonds the wiring layer 314 and the semiconductor element 350. The bonding layer 340 is formed, for example, by melting and solidifying a solder plate.

[0078] The bonding layer 341 bonds the wiring layer 315 and the semiconductor element 350. The bonding layer 341 is formed, for example, by melting and solidifying a solder plate.

[0079] [Semiconductor element 350] The semiconductor element 350 is, for example, a power semiconductor element used in a power conversion device, etc. The semiconductor element 350 is bonded to the wiring layer 314 of the insulating substrate 310 via a bonding layer 340. The semiconductor element 351 is bonded to the wiring layer 315 of the insulating substrate 311 via a bonding layer 341.

[0080] [Sealing resin 360] The sealing resin 360 seals the insulating substrate 310 and the insulating substrate 311 to which the semiconductor element 350 is bonded. A recess 360a1 is formed in the sealing resin 360 so as to be recessed from a lower surface 360S1 on the -Z side of the sealing resin 360. The heat dissipation layer 316 is exposed from the recess 360a1. The recess 360a1 is formed so that at least a portion of the recess 360a1 is included in the heat dissipation layer 316 when viewed from the lower surface 360S1 that contacts the heat dissipation member 320. The sealing resin 360 is formed so as to be recessed from an upper surface 360S2 on the +Z side of the sealing resin 360. The heat dissipation layer 317 is exposed from the recess 360a2. The recess 360a2 is formed so that at least a portion of the recess 360a2 is included in the heat dissipation layer 317 when viewed from the upper surface 360S2 that contacts the heat dissipation member 321.

[0081] [Semiconductor Package 370] The semiconductor package 370 includes insulating substrates 310 and 311, bonding layers 340 and 341, a semiconductor element 350, and sealing resin 360. The semiconductor package 370 is a package in which the insulating substrates 310 and 311, the bonding layers 340 and 341, and the semiconductor element 350 are resin-sealed with sealing resin 360. In the semiconductor package 370, recesses 360a1 and 360a2 are formed in the sealing resin 360, thereby sealing the insulating substrates 310 and 311 with the resin so that the heat dissipation layer 316 of the insulating substrate 310 and the heat dissipation layer 317 of the insulating substrate 311 are exposed on both main surfaces (a lower surface 360S1 and an upper surface 360S2).

[0082] <Method of Assembling Semiconductor Device 301> A description will now be given of a method for assembling (manufacturing) the semiconductor device 201. Figures 17, 18, 19 and 20 are diagrams for explaining the assembly of a semiconductor device 301 according to the fourth embodiment.

[0083] 17, the bonding member 330 is moved in the direction of arrow D1 to be attached to the recess 360a1 of the sealing resin 360. Then, the bonding member 331 is moved in the direction of arrow D2 to be attached to the recess 360a2 of the sealing resin 360 (a step of attaching a bonding member). If the shape of the bonding member 330 is slightly larger than the recess 360a1 of the sealing resin 360 in a top view, when the bonding member 330 is attached to the recess 360a1, the bonding member 330 fits into the recess 360a1. If the shape of the bonding member 331 is slightly larger than the recess 360a2 of the sealing resin 360 in a top view, when the bonding member 331 is attached to the recess 360a2, the bonding member 331 fits into the recess 360a2. Therefore, the sealing resin 360 that seals the insulating substrates 310 and 311 and the bonding members 330 and 331 can be handled as an integrated unit.

[0084] Next, the insulating substrates 310 and 311 (hereinafter referred to as an assembly 380) sealed with sealing resin 360 to which bonding members 330 and 331 are attached are placed on the heat dissipation members 320 and 321 (a step of placing the insulating substrates on the heat dissipation members). FIG. 18 is a diagram showing the state in which the insulating substrates 310 and 311 sealed with sealing resin 360 to which bonding members 330 and 331 are attached are placed on the heat dissipation members 320 and 321. When placing the assembly 380 on the heat dissipation members 320 and 321, for example, as shown in FIG. 19, the assembly 380 may be inserted between the fixed heat dissipation members 320 and 321 by moving it in the direction of arrow E. 20, the heat dissipation member 320 may be joined to the assembly 380 by moving it in the direction of the arrow F1, and the heat dissipation member 321 in the direction of the arrow F2.

[0085] Then, assembled body 380 is heated. When assembled body 380 is heated, the plate solder that forms joining members 330 and 331 melts. Next, assembled body 380 is cooled. When assembled body 380 is cooled, the plate solder that forms joining members 330 and 331 solidifies. As the plate solder solidifies, insulating substrate 310 and heat dissipation member 320 are bonded together. Also, insulating substrate 311 and heat dissipation member 321 are bonded together. As described above, by heating and cooling assembled body 380, insulating substrate 310 and heat dissipation member 320, and insulating substrate 311 and heat dissipation member 321 are bonded together (a process of bonding insulating substrates and heat dissipation members).

[0086] Through the above-described steps, the insulating substrate 210 and the heat dissipation member 220 are bonded together using the bonding member 230 to manufacture the semiconductor device 201 .

[0087] <Effects and Actions> In the semiconductor device 301 of this embodiment, the semiconductor package 370 has a recess 360a1 on a bottom surface 360S1 that comes into contact with the heat dissipation member 320, and a bonding member 330 is attached to the recess 360a1. The semiconductor package 370 also has a recess 360a2 on an top surface 360S2 that comes into contact with the heat dissipation member 321, and a bonding member 331 is attached to the recess 360a2. By attaching the bonding member 330 to the recess 360a1 and the bonding member 331 to the recess 361a2, the bonding members 330 and 331 can be positioned when attaching the semiconductor package 370 to the heat dissipation member 320 and the heat dissipation member 321. Furthermore, the lower surface 360S1 and the upper surface 360S2 are in contact with the mounting surfaces of the heat dissipation members 320 and 321, respectively, so that the inclination of the semiconductor package 370 relative to the heat dissipation members 320 and 321 can be suppressed.

[0088] In the semiconductor device 201 of the fourth embodiment, a recess may be provided on the mounting surface of at least one of the heat dissipation member 320 or the heat dissipation member 321, as in the heat dissipation member 120 of the second embodiment 101. Alternatively, a recess may be provided on both the semiconductor package 370 and the heat dissipation member 320. Alternatively, a recess may be provided on both the semiconductor package 370 and the heat dissipation member 321.

[0089] It should be noted that the embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive, and the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0090] 1, 101, 201, 301 Semiconductor device 10, 10A, 110, 210, 310, 311 insulating substrate 16, 16A, 116, 216, 316, 317 Heat dissipation layer 16S, 16AS bottom side 16a, 16Aa1, 16Aa2 recesses 20, 120, 220, 320, 321 Heat dissipation materials 220S Placement surface 30, 30A1, 30A2, 130, 230, 330, 331 Joint members 120a, 120Aa1, 120Aa2 recess 260, 360 Sealing resin 260S, 360S1 bottom side 360S2 top 260a, 360a, 360a1, 360a2 recesses 270, 370 semiconductor packages W16a, W30 width H16a, H30 height D16a Depth T30 thickness

Claims

1. a resin-sealed semiconductor package having a heat dissipation layer exposed on at least one of its main surfaces; a heat dissipation member bonded to the heat dissipation layer, the semiconductor package has a plurality of recesses on a surface that comes into contact with the heat dissipation member, a bonding member for bonding the heat dissipation layer and the heat dissipation member to each of the plurality of recesses; a portion of the contact surface surrounding each of the plurality of recesses contacts the heat dissipation member; The joining member fits into each of the plurality of recesses. Semiconductor device.

2. The recessed portion is At least a part of the contact surface is included in the heat dissipation layer when viewed from a direction perpendicular to the contact surface. The semiconductor device according to claim 1 .

3. The heat dissipation layer is formed on an insulating substrate 3. The semiconductor device according to claim 1.

4. a resin-sealed semiconductor package in which a first heat dissipation layer is exposed on a first main surface of one of the two main surfaces and a second heat dissipation layer is exposed on a second main surface of the other of the two main surfaces; a heat dissipation member including a first heat dissipation member bonded to the first heat dissipation layer and a second heat dissipation member bonded to the second heat dissipation layer; Equipped with the semiconductor package has a first recess in the first main surface that contacts the first heat dissipation member and a second recess in the second main surface that contacts the second heat dissipation member; a first bonding member that bonds the first heat dissipation layer and the first heat dissipation member to each other is provided in the first recess; a second bonding member that bonds the second heat dissipation layer and the first heat dissipation member to each other in the second recess; a portion of the first main surface surrounding the first recess is in contact with the first heat dissipation layer; the first joining member is fitted into the first recess, a portion of the second main surface surrounding the second recess is in contact with the second heat dissipation layer; The second joining member fits into the second recess. Semiconductor device.

5. the first recess is at least partially included in the first heat dissipation layer when viewed in a direction perpendicular to the first main surface; At least a portion of the second recess is included in the second heat dissipation layer when viewed in a direction perpendicular to the second main surface. The semiconductor device according to claim 4 .

6. The heat dissipation member is a heat dissipation plate. The semiconductor device according to claim 1 .

7. The heat dissipation member is a liquid-cooled cooler. The semiconductor device according to claim 1 .

8. A method for manufacturing a semiconductor device including an insulating substrate having a heat dissipation layer formed on one main surface thereof, and a heat dissipation member bonded to the heat dissipation layer, comprising: a step of attaching a bonding member that bonds the insulating substrate and the heat dissipation member to each of a plurality of recesses formed on a surface of the heat dissipation layer that comes into contact with the heat dissipation member; placing the insulating substrate on the heat dissipation member; and a step of bonding the insulating substrate and the heat dissipation member by heating and cooling the insulating substrate on which the heat dissipation member is placed, a portion of the contact surface surrounding each of the plurality of recesses contacts the heat dissipation member; The joining member fits into each of the plurality of recesses. A method for manufacturing a semiconductor device.

9. The width of the joining member is wider than the width of each of the plurality of recesses. The method for manufacturing a semiconductor device according to claim 8 .

10. The thickness of the joining member is greater than the depth of each of the plurality of recesses. The method for manufacturing a semiconductor device according to claim 8 .

11. a difference between the thickness of the joining member and the depth of each of the plurality of recesses is 100 μm or less; The method for manufacturing a semiconductor device according to claim 10.

12. a resin-sealed semiconductor package having a heat dissipation layer exposed on at least one of its main surfaces; a heat dissipation member bonded to the heat dissipation layer, a step of attaching a joining member for joining the semiconductor package and the heat dissipation member to each of a plurality of recesses formed on a surface of the semiconductor package that comes into contact with the heat dissipation member; placing the semiconductor package on the heat dissipation member; and a step of bonding the semiconductor package and the heat dissipation member by heating and cooling the semiconductor package on which the heat dissipation member is placed, a portion of the contact surface surrounding each of the plurality of recesses contacts the heat dissipation member; The joining member fits into each of the plurality of recesses. A method for manufacturing a semiconductor device.

13. The width of the joining member is wider than the width of each of the plurality of recesses. The method for manufacturing a semiconductor device according to claim 12.

14. The thickness of the joining member is greater than the depth of each of the plurality of recesses. The method for manufacturing a semiconductor device according to claim 12.

15. a difference between the thickness of the joining member and the depth of each of the plurality of recesses is 100 μm or less; The method for manufacturing a semiconductor device according to claim 14.

16. a resin-sealed semiconductor package in which a first heat dissipation layer is exposed on a first main surface of one of the two main surfaces and a second heat dissipation layer is exposed on a second main surface of the other of the two main surfaces; a heat dissipation member including a first heat dissipation member bonded to the first heat dissipation layer and a second heat dissipation member bonded to the second heat dissipation layer; A method for manufacturing a semiconductor device comprising: a step of attaching a first bonding member that bonds the first heat dissipation layer and the first heat dissipation member to a first recess in the first main surface of the semiconductor package that contacts the first heat dissipation member, and attaching a second bonding member that bonds the second heat dissipation layer and the second heat dissipation member to a second recess in the second main surface of the semiconductor package that contacts the second heat dissipation member; placing the semiconductor package on the first heat dissipation member and the second heat dissipation member; a step of heating and cooling the semiconductor package on which the first heat dissipation member and the second heat dissipation member are placed, thereby bonding the semiconductor package to the first heat dissipation member and the second heat dissipation member, a portion of the first main surface surrounding the first recess is in contact with the first heat dissipation layer; the first joining member is fitted into the first recess, a portion of the second main surface surrounding the second recess is in contact with the second heat dissipation layer; The second joining member fits into the second recess. A method for manufacturing a semiconductor device.

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