Semiconductor light emitting element and method for manufacturing the same

Abstract

[Problem] To provide a semiconductor light emitting element which has excellent productivity and which can perform positioning with high accuracy between a current injection region and a lens, and to provide a manufacturing method of semiconductor light emitting element. [Solution] A manufacturing method of semiconductor light emitting element involves: forming a light-blocking structure, which is a structure opaque to an exposure wavelength, on the first main surface of a substrate that has a first main surface and a second main surface opposite of the first main surface; forming a light sensitive layer comprising a light sensitive material on the second main surface of the substrate; irradiating light having the aforementioned exposure wavelength onto the substrate from the first main surface side; forming the light sensitive layer in a pattern corresponding to the light-blocking structure; and forming a lens using the light sensitive layer.

Description

[Technical Field]

[0001] The present technology relates to a semiconductor light emitting device including a lens and a method for manufacturing the semiconductor light emitting device. [Background technology]

[0002] In semiconductor light-emitting devices such as VCSEL (Vertical Cavity Surface Emitting Laser) devices, a method of forming a lens on one side has been proposed as a method of nullifying diffraction loss due to lateral optical field confinement (see Patent Document 1). In this method, a photosensitive member is patterned on the back surface of the substrate in accordance with a current injection region provided on the surface of the substrate, and the pattern of this photosensitive member is used to form the lens.

[0003] In order to accurately direct the light emitted from the current injection region into the lens, the current injection region and the photosensitive member must be aligned with high precision. In the above method, the alignment marks on the substrate surface are aligned with the alignment marks on the photomask through the substrate, and the photosensitive member is patterned by exposure using this photomask. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] International Publication No. 2018-083877 Summary of the Invention [Problem to be solved by the invention]

[0005] However, with the technique described in Patent Document 1, when aligning the current injection region with the photomask, there is a risk that the centers of the alignment marks on the substrate and the photomask may be misaligned due to the difference in refractive index between the substrate and air. If exposure is performed in this state, the misalignment between the current injection region and the lens may exceed the specifications of the exposure device, which could result in a deterioration in threshold value and yield.

[0006] Furthermore, because there are few exposure tools that can perform exposure through the substrate, improving overlay accuracy requires a large amount of money. Measuring overlay misalignment also requires measurement through the substrate, which increases measurement errors and causes development delays.

[0007] In view of the above circumstances, an object of the present technology is to provide a semiconductor light emitting device that is excellent in productivity and that allows for highly accurate alignment of a current injection region and a lens, and a method for manufacturing the semiconductor light emitting device. [Means for solving the problem]

[0008] In order to achieve the above object, a method for manufacturing a light-emitting element according to the present technology includes forming a light-shielding structure that is opaque to an exposure wavelength on a side of a substrate having a first main surface and a second main surface opposite to the first main surface, the light-shielding structure being opaque to the first main surface; forming a photosensitive layer made of a photosensitive material on the second main surface side of the substrate; irradiating the substrate from the first principal surface side with light having the exposure wavelength to form the photosensitive layer into a pattern corresponding to the light-shielding structure; The photosensitive layer is used to form a lens.

[0009] In the step of irradiating light having the exposure wavelength, a modified region may be formed in the photosensitive layer where light not blocked by the light-shielding structure has entered, and the modified region may be removed to form the photosensitive layer into a pattern corresponding to the shape of the light-shielding structure.

[0010] In the step of irradiating light having the exposure wavelength, the modified region may be removed to form the photosensitive layer into a shape such that the outline of the photosensitive layer as viewed from a direction perpendicular to the first main surface is similar to the outline of the light-shielding structure as viewed from a direction perpendicular to the first main surface, and the center of gravity of the photosensitive layer as viewed from a direction perpendicular to the first main surface coincides with the center of gravity of the light-shielding structure as viewed from a direction perpendicular to the first main surface.

[0011] In the step of forming the lenses, the photosensitive layer may be heated to cause the photosensitive layer to ball up.

[0012] In the step of forming the lens, the balled-up photosensitive layer may be used as the lens.

[0013] In the step of forming the lens, the substrate may be etched using the balled-up photosensitive layer as an etching mask to form the lens.

[0014] The balled-up photosensitive layer may have an outline similar to the outline of the light-shielding structure as viewed in a direction perpendicular to the first main surface, and the center of gravity of the balled-up photosensitive layer as viewed in a direction perpendicular to the first main surface may coincide with the center of gravity of the light-shielding structure as viewed in a direction perpendicular to the first main surface.

[0015] The substrate may be made of GaN, GaAs or InP.

[0016] The light-shielding structure may be made of either or both of a metal and a multilayer light-reflecting film.

[0017] The photosensitive material may be a positive photoresist.

[0018] In order to achieve the above object, a light-emitting element according to the present technology includes a substrate, a light-shielding structure, and a lens structure. The substrate has a first major surface and a second major surface opposite to the first major surface. The light-shielding structure is formed on the first main surface side of the substrate and is a structure that is opaque to the exposure wavelength. The lens structure is formed on the second main surface side of the substrate, and its outline when viewed from a direction perpendicular to the first main surface is similar to the outline of the light-shielding structure when viewed from a direction perpendicular to the first main surface, and its center of gravity when viewed from a direction perpendicular to the first main surface coincides with the center of gravity of the light-shielding structure when viewed from a direction perpendicular to the first main surface.

[0019] a current injection region is provided in the substrate; The lens structure includes a lens; The light emitting device may further include a light reflecting layer formed on a surface of the lens, forming a concave mirror that focuses light generated within the substrate onto the current injection region.

[0020] The center of the lens when viewed in a direction perpendicular to the first main surface may coincide with the center of the current injection region when viewed in a direction perpendicular to the first main surface. Light-emitting element.

[0021] The substrate may be made of GaN, GaAs or InP.

[0022] The light-shielding structure may be made of either or both of a metal and a multilayer light-reflecting film.

[0023] The lens structure may be made of the same material as the substrate.

[0024] The lens structure may be made of a photosensitive material. [Brief explanation of the drawings]

[0025] [Figure 1] 1 is a cross-sectional view of a light-emitting device according to an embodiment of the present technology. [Figure 2] FIG. 2 is a plan view of the light emitting element as viewed from the first main surface side. [Figure 3] FIG. 3 is a plan view of a second main surface of the light-emitting element. [Figure 4] FIG. 2 is a cross-sectional view of a substrate of the light-emitting element. [Figure 5] 3 is a schematic diagram showing a light-shielding structure of the light-emitting element. FIG. [Figure 6] 3 is a schematic diagram showing a light-shielding structure of the light-emitting element. FIG. [Figure 7] 3A and 3B are schematic diagrams showing a lens structure of the light-emitting element. [Figure 8] 3A to 3C are schematic diagrams illustrating a method for manufacturing the light-emitting element. [Figure 9] 3A to 3C are schematic diagrams illustrating a method for manufacturing the light-emitting element. [Figure 10] 3A to 3C are schematic diagrams illustrating a method for manufacturing the light-emitting element. [Figure 11] 3A to 3C are schematic diagrams illustrating a method for manufacturing the light-emitting element. [Figure 12] 3A to 3C are schematic diagrams illustrating a method for manufacturing the light-emitting element. [Figure 13] 3A to 3C are schematic diagrams illustrating a method for manufacturing the light-emitting element. [Figure 14] 3A to 3C are schematic diagrams illustrating a method for manufacturing the light-emitting element. [Figure 15] 3 is a schematic diagram showing a pattern of a photosensitive layer of the light-emitting element. FIG. [Figure 16] 5A to 5C are schematic diagrams illustrating a method for manufacturing a light-emitting element according to a comparative example. [Figure 17] 5A to 5C are schematic diagrams illustrating a method for manufacturing a light-emitting element according to a comparative example. [Figure 18] 10A and 10B are schematic diagrams illustrating light-shielding structures having other shapes of the light-emitting element according to the embodiment of the present technology. [Figure 19] 5A to 5C are schematic diagrams illustrating a method for forming a lens structure using the light-shielding structure. [Figure 20] 10A and 10B are schematic diagrams illustrating light-shielding structures having other shapes of the light-emitting element according to the embodiment of the present technology. [Figure 21] 5A to 5C are schematic diagrams illustrating a method for forming a lens structure using the light-shielding structure. [Figure 22] 1 is a cross-sectional view of a rear-emission type light-emitting element according to an embodiment of the present technology. [Figure 23] 1 is a cross-sectional view of a light-emitting element according to a first embodiment of the present technology. [Figure 24] 1 is a schematic diagram illustrating a light-shielding structure of a light-emitting element according to a first embodiment of the present technology. [Figure 25] 1 is a schematic diagram illustrating a lens structure of a light-emitting device according to a first embodiment of the present technology. [Figure 26] 3A to 3C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to the first embodiment of the present technology. [Figure 27] 3A to 3C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to the first embodiment of the present technology. [Figure 28] 3A to 3C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to the first embodiment of the present technology. [Figure 29] 3A to 3C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to the first embodiment of the present technology. [Figure 30] 3A to 3C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to the first embodiment of the present technology. [Figure 31] 3A to 3C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to the first embodiment of the present technology. [Figure 32] 3A to 3C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to the first embodiment of the present technology. [Figure 33] 3A to 3C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to the first embodiment of the present technology. [Figure 34] 3A to 3C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to the first embodiment of the present technology. [Figure 35] 1 is a cross-sectional view of a rear emission type light emitting element according to a first embodiment of the present technology. [Figure 36] FIG. 10 is a cross-sectional view of a light-emitting device according to a second embodiment of the present technology. [Figure 37] 10 is a schematic diagram illustrating a light-shielding structure of a light-emitting element according to a second embodiment of the present technology. [Figure 38] 10 is a schematic diagram illustrating a lens structure of a light-emitting device according to a second embodiment of the present technology. [Figure 39] 5A to 5C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to a second embodiment of the present technology. [Figure 40] 5A to 5C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to a second embodiment of the present technology. [Figure 41] 5A to 5C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to a second embodiment of the present technology. [Figure 42] 5A to 5C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to a second embodiment of the present technology. [Figure 43] 5A to 5C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to a second embodiment of the present technology. [Figure 44] 5A to 5C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to a second embodiment of the present technology. [Figure 45] 5A to 5C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to a second embodiment of the present technology. [Figure 46] FIG. 10 is a cross-sectional view of a rear emission type light emitting element according to a second embodiment of the present technology. [Figure 47] FIG. 10 is a cross-sectional view of a light-emitting device according to a third embodiment of the present technology. [Figure 48] 10 is a schematic diagram illustrating a light-shielding structure of a light-emitting element according to a third embodiment of the present technology. FIG. [Figure 49] 10 is a schematic diagram illustrating a lens structure of a light-emitting device according to a third embodiment of the present technology. FIG. [Figure 50] 10A to 10C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to a third embodiment of the present technology. [Figure 51] 10A to 10C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to a third embodiment of the present technology. [Figure 52] 10A to 10C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to a third embodiment of the present technology. [Figure 53] 10A to 10C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to a third embodiment of the present technology. [Figure 54] 10A to 10C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to a third embodiment of the present technology. [Figure 55] 10A to 10C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to a third embodiment of the present technology. [Figure 56] 10A to 10C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to a third embodiment of the present technology. [Figure 57] FIG. 10 is a cross-sectional view of a rear emission type light emitting element according to a third embodiment of the present technology. [Figure 58] FIG. 10 is a cross-sectional view of a light-emitting device according to Example 4 of the present technology. [Figure 59] 10 is a schematic diagram showing a light-shielding structure of a light-emitting element according to Example 4 of the present technology. FIG. [Figure 60] 10 is a schematic diagram illustrating a lens structure of a light-emitting device according to Example 4 of the present technology. FIG. [Figure 61] 10A to 10C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to Example 4 of the present technology. [Figure 62] 10A to 10C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to Example 4 of the present technology. [Figure 63] 10A to 10C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to Example 4 of the present technology. [Figure 64] 10A to 10C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to Example 4 of the present technology. [Figure 65] 10A to 10C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to Example 4 of the present technology. [Figure 66] 10A to 10C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to Example 4 of the present technology. [Figure 67] 10A to 10C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to Example 4 of the present technology. [Figure 68] FIG. 10 is a cross-sectional view of a rear emission type light emitting element according to a fourth embodiment of the present technology. [Figure 69] FIG. 11 is a cross-sectional view of a light-emitting device including a lens structure having another shape according to Example 4 of the present technology. [Figure 70] 10A and 10B are schematic diagrams of lens structures having other shapes according to the fourth embodiment of the present technology. [Figure 71] FIG. 11 is a cross-sectional view of a rear-emission type light-emitting element having a lens structure with another shape according to a fourth embodiment of the present technology. [Figure 72] FIG. 10 is a cross-sectional view of a light-emitting device according to a fifth embodiment of the present technology. [Figure 73] 10 is a schematic diagram showing a light-shielding structure of a light-emitting element according to Example 5 of the present technology. FIG. [Figure 74] 10 is a schematic diagram illustrating a lens structure of a light-emitting device according to Example 5 of the present technology. FIG. [Figure 75] 10A to 10C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to a fifth embodiment of the present technology. [Figure 76] 10A to 10C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to a fifth embodiment of the present technology. [Figure 77]10A to 10C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to a fifth embodiment of the present technology. [Figure 78] 10A to 10C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to a fifth embodiment of the present technology. [Figure 79] 10A to 10C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to a fifth embodiment of the present technology. [Figure 80] 10A to 10C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to a fifth embodiment of the present technology. [Figure 81] 10A to 10C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to a fifth embodiment of the present technology. [Figure 82] 10A to 10C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to a fifth embodiment of the present technology. [Figure 83] FIG. 10 is a cross-sectional view of a rear emission type light emitting element according to a fifth embodiment of the present technology. [Figure 84] FIG. 10 is a cross-sectional view of a light-emitting device according to Example 6 of the present technology. [Figure 85] 13 is a schematic diagram showing a light-shielding structure of a light-emitting element according to Example 6 of the present technology. FIG. [Figure 86] 13 is a schematic diagram illustrating a lens structure of a light-emitting device according to Example 6 of the present technology. FIG. [Figure 87] 10A to 10C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to Example 6 of the present technology. [Figure 88] 10A to 10C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to Example 6 of the present technology. [Figure 89] 10A to 10C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to Example 6 of the present technology. [Figure 90] 10A to 10C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to Example 6 of the present technology. [Figure 91] 10A to 10C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to Example 6 of the present technology. [Figure 92] 10A to 10C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to Example 6 of the present technology. [Figure 93] 10A to 10C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to Example 6 of the present technology. [Figure 94] 10A to 10C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to Example 6 of the present technology. [Figure 95]10A to 10C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to Example 6 of the present technology. [Figure 96] FIG. 11 is a cross-sectional view of a light-emitting device according to Example 7 of the present technology. [Figure 97] FIG. 10 is a cross-sectional view of a light-emitting device according to an eighth embodiment of the present technology. [Figure 98] 13 is a schematic diagram illustrating a method for manufacturing a light-emitting device according to Example 8 of the present technology. [Figure 99] 13 is a schematic diagram illustrating a method for manufacturing a light-emitting device according to Example 8 of the present technology. [Figure 100] 13 is a schematic diagram illustrating a method for manufacturing a light-emitting device according to Example 8 of the present technology. [Figure 101] 13 is a schematic diagram illustrating a method for manufacturing a light-emitting device according to Example 8 of the present technology. [Figure 102] 13 is a schematic diagram illustrating a method for manufacturing a light-emitting device according to Example 8 of the present technology. [Figure 103] 13 is a schematic diagram illustrating a method for manufacturing a light-emitting device according to Example 8 of the present technology. [Figure 104] 13 is a schematic diagram illustrating a method for manufacturing a light-emitting device according to Example 8 of the present technology. [Figure 105] 13 is a schematic diagram illustrating a method for manufacturing a light-emitting device according to Example 8 of the present technology. [Figure 106] 13 is a schematic diagram illustrating a method for manufacturing a light-emitting device according to Example 8 of the present technology. [Figure 107] 13 is a schematic diagram illustrating a method for manufacturing a light-emitting device according to Example 8 of the present technology. [Figure 108] FIG. 10 is a cross-sectional view of a light-emitting device according to Example 9 of the present technology. [Figure 109] 13A to 13C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to Example 9 of the present technology. [Figure 110] 13A to 13C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to Example 9 of the present technology. [Figure 111] 13A to 13C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to Example 9 of the present technology. [Figure 112] 13A to 13C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to Example 9 of the present technology. [Figure 113]13A to 13C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to Example 9 of the present technology. [Figure 114] 13A to 13C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to Example 9 of the present technology. [Figure 115] 13A to 13C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to Example 9 of the present technology. [Figure 116] 13A to 13C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to Example 9 of the present technology. DETAILED DESCRIPTION OF THE INVENTION

[0026] A light-emitting device according to an embodiment of the present technology will be described.

[0027] [Light-emitting element configuration] FIG. 1 is a cross-sectional view of a light-emitting element 100 according to this embodiment, and FIG. 2 is a plan view of the light-emitting element 100. FIG. 1 is a cross-sectional view taken along line AA in FIG. 2. The light-emitting element 100 is a VCSEL (Vertical Cavity Surface Emitting Laser) element, and as shown in FIGS. 1 and 2, includes a substrate 101, a transparent conductive layer 102, an insulating layer 103, an upper electrode 104, a lower electrode 105, an upper light-reflecting layer 106, a lower light-reflecting layer 107, wax 108, and a supporting substrate 109. Note that the wax 108 and the supporting substrate 109 are not shown in FIG. 3. Hereinafter, the layer plane directions of the light-emitting element 100 are referred to as XY directions, and the stacking direction is referred to as Z direction.

[0028] The substrate 101 is made of a semiconductor material and forms the light-emitting structure of the light-emitting element 100. The semiconductor material constituting the substrate 101 is, for example, GaN, GaAs, or InP. FIG. 4 is a cross-sectional view of the substrate 101. As shown in the figure, the substrate 101 has a first main surface 101a and a second main surface 101b, and the first main surface 101a and the second main surface 101b are main surfaces on opposite sides of the substrate 101. FIG. 2 is a view of the light-emitting element 100 viewed from the first main surface 101a side, and FIG. 3 is a view of the second main surface 101b of the light-emitting element 100 viewed from the first main surface 101a side.

[0029] As shown in Figure 4, the substrate 101 has an active layer 121. The active layer 121 is a layer that generates light due to carrier recombination. The active layer 121 may have a multiple quantum well structure in which multiple quantum well layers and barrier layers are alternately stacked. The active layer 121 may also be any other layer that generates light due to carrier recombination.

[0030] 4, the substrate 101 has a current injection region 122 and an insulating region 123. The current injection region 122 is a region that has conductivity, and the insulating region 123 is a region that has insulation properties. The current injection region 122 and the insulating region 123 are formed in the substrate 101 at a depth that includes the active layer 121. The current injection region 122 is provided in the center of the substrate 101, and is surrounded by the insulating region 123 in the X and Y directions, as shown in FIGS.

[0031] There are no particular limitations on the method for forming the current injection region 122 and the insulating region 123. For example, the insulating region 123 can be formed by implanting ions such as boron into the constituent material of the substrate 101, and the region into which the ions are not implanted can be the current injection region 122. Alternatively, the constituent material of the substrate 101 can be oxidized from the outer periphery, with the oxidized region being the insulating region 123 and the unoxidized region being the current injection region 122. Furthermore, a buried tunnel junction layer can be formed in the substrate 101, and the region where the tunnel junction layer is provided can be the current injection region 122, and the other region can be the insulating region 123.

[0032] As shown in FIGS. 3 and 4, a lens structure 131 is provided on the second main surface 101b side of the substrate 101. The lens structure 131 includes a lens 132 and a protective portion 133. The lens 132 has a convex lens shape that protrudes from the second main surface 101b. As shown in FIG. 3, the lens 132 is arranged so that its center coincides with the center of the current injection region 122 when viewed from a direction perpendicular to the first main surface 101a (Z direction). The protective portion 133 protrudes from the second main surface 101b and protects the lens 132. The lens structure 131 is made of the same material as the substrate 101 or a photosensitive material described below.

[0033] The transparent conductive layer 102 (see FIG. 1) is made of a transparent conductive material such as ITO (Indium Tin Oxide) and is provided on the first main surface 101a side of the substrate 101. The insulating layer 103 is made of an insulating material such as SiO2 and is provided on the first main surface 101a side of the substrate 101.

[0034] The upper electrode 104 is made of metal and is provided on the transparent conductive layer 102 and the insulating layer 103. The upper electrode 104 is electrically connected to the first major surface 101a side of the active layer 121 (see FIG. 4) via the transparent conductive layer 102 and functions as one electrode (e.g., a p-type electrode) of the light-emitting element 100. As shown in FIG. 2, the upper electrode 104 is formed in a predetermined shape when viewed from a direction perpendicular to the first major surface 101a (Z direction). Specifically, the upper electrode 104 has a pad portion 104a, an outer ring portion 104b, and a central portion 104c. The pad portion 104a is a portion to which a terminal that supplies current to the light-emitting element 100 is joined. The outer ring portion 104b is connected to the pad portion 104a and is an annular portion that surrounds the central portion 104c. The central portion 104c is electrically connected to the outer ring portion 104b via the transparent conductive layer 102 and supplies current to the current injection region 122.

[0035] The lower electrode 105 (see FIG. 2) is made of metal and is provided on the insulating layer 103. The lower electrode 105 is electrically connected to the second major surface 101b side of the active layer 121 (see FIG. 4) via a through-hole or the like provided in the insulating layer 103, and functions as the other electrode (e.g., an n-type electrode) of the light-emitting element 100. Specifically, the lower electrode 105 has a portion formed on the second major surface 101b around the lens 132, and supplies current to the current injection region 122 from this portion.

[0036] The upper light-reflecting layer 106 is provided on the transparent conductive layer 102 and the insulating layer 103, and overlaps the current injection region 122 when viewed from a direction perpendicular to the first main surface 101a (Z direction). The upper light-reflecting layer 106 reflects a component of a specific wavelength (hereinafter, wavelength λ) of light incident from the active layer 121 toward the active layer 121. The upper light-reflecting layer 106 can be a DBR (Distributed Bragg Reflector) made of a multilayer light-reflecting film in which high-refractive-index layers and low-refractive-index layers are alternately stacked, and is, for example, a dielectric multilayer film having a stacked structure such as Ta2O5 / SiO2, SiO2 / SiN, or SiO2 / Nb2O5.

[0037] The lower light reflecting layer 107 is provided on the second principal surface 101b and overlaps the current injection region 122 when viewed from a direction perpendicular to the first principal surface 101a (Z direction). The lower light reflecting layer 107 reflects a component of wavelength λ of light incident from the active layer 121 toward the active layer 121. Since the lens structure 131 is provided on the second principal surface 101b, the lower light reflecting layer 107 has a shape corresponding to the shape of the lens structure 131. Since the lens 132 has a convex lens shape as described above, the lower light reflecting layer 107 on the lens 132 forms a concave mirror when viewed from the current injection region 122 side. The lower light reflecting layer 107 can be a DBR (Distributed Bragg Reflector) made of a multilayer light reflecting film in which high-refractive index layers and low-refractive index layers are alternately stacked in multiple layers, and is, for example, a dielectric multilayer film having a stacked structure such as Ta2O5 / SiO2, SiO2 / SiN, or SiO2 / Nb2O5.

[0038] Wax 108 is applied onto lower light reflecting layer 107 to bond substrate 101 to supporting substrate 109. Supporting substrate 109 is made of sapphire or the like, and supports each layer of light emitting element 100.

[0039] The light-emitting element 100 has the above-described configuration. When a voltage is applied between the upper electrode 104 and the lower electrode 105 in the light-emitting element 100, a current is injected into the current injection region 122. This injected current causes spontaneous emission of light near the current injection region 122 in the active layer 121. The component of the spontaneous emission light with wavelength λ is reflected by the upper light-reflecting layer 106 and the lower light-reflecting layer 107, forms a standing wave between the upper light-reflecting layer 106 and the lower light-reflecting layer 107, and is amplified by the active layer 121. When the injected current exceeds a threshold, the light forming the standing wave causes laser oscillation. The laser light thus generated passes through the upper light-reflecting layer 106 and is emitted from the light-emitting element 100.

[0040] As described above, the lens 132 is provided on the second principal surface 101b, and the lower light-reflecting layer 107 on the lens 132 forms a concave mirror. Therefore, light incident on the lower light-reflecting layer 107 is focused by this concave mirror onto the current injection region 122, making it possible to suppress diffraction loss due to optical field confinement in the lateral directions (X and Y directions). However, to achieve this effect, the positional relationship between the lens 132 and the current injection region 122 must be adjusted with high precision.

[0041] In the light-emitting device 100, the upper electrode 104 may be a p-type electrode, the lower electrode 105 may be an n-type electrode, the upper light-reflecting layer 106 may be a p-type DBR, and the lower light-reflecting layer 107 may be an n-type DBR. Conversely, the upper electrode 104 may be an n-type electrode, the lower electrode 105 may be a p-type electrode, the upper light-reflecting layer 106 may be an n-type DBR, and the lower light-reflecting layer 107 may be a p-type DBR.

[0042] [Shape of the light-blocking structure and lens structure] The light-emitting element 100 has a light-shielding structure, and this light-shielding structure has a predetermined relationship with the lens structure 131. The light-shielding structure is formed on the first main surface 101a side of the substrate 101, among the components of the light-emitting element 100, and is a structure that is opaque to the exposure wavelength described below. FIGS. 5 and 6 are schematic diagrams showing a light-shielding structure 141. FIG. 5 is a cross-sectional view of a portion of the configuration of the light-emitting element 100, and the light-shielding structure 141 is indicated by a thick line. FIG. 6 is a plan view of the light-emitting element 100 as viewed from a direction perpendicular to the first main surface 101a (Z direction), and the light-shielding structure 141 is indicated by a thick line and hatching. As shown in FIGS. 5 and 6, the light-shielding structure 141 is composed of an upper electrode 104, a lower electrode 105, and an upper light-reflecting layer 106.

[0043] 7 is a schematic diagram showing lens structure 131, and is a plan view of second principal surface 101b as viewed from a direction perpendicular to first principal surface 101a (Z direction). In this figure, lens structure 131 is indicated by thick lines and hatching. As shown in FIGS. 6 and 7, the outer shape of lens structure 131 as viewed from a direction perpendicular to first principal surface 101a (Z direction) is similar to the outer shape of light-shielding structure 141 as viewed from the same direction (Z direction), and the center of gravity as viewed from the same direction (Z direction) coincides with the center of gravity of light-shielding structure 141 as viewed from the same direction (Z direction).

[0044] Specifically, the lens structure 131 may have an outer shape when viewed from a direction perpendicular to the first main surface 101a (Z direction) that is the same as the outer shape of the light-shielding structure 141 when viewed from the same direction (Z direction), and the center of gravity when viewed from the same direction (Z direction) may coincide with the center of gravity of the light-shielding structure 141 when viewed from the same direction (Z direction). Alternatively, the lens structure 131 may have an outer shape when viewed from a direction perpendicular to the first main surface 101a (Z direction) that is a shape obtained by reducing or enlarging the outer shape of the light-shielding structure 141 when viewed from the same direction (Z direction) by a certain magnification, and the center of gravity when viewed from the same direction (Z direction) may coincide with the center of gravity of the light-shielding structure 141 when viewed from the same direction (Z direction). Such a shape of the lens structure 131 can be formed by a manufacturing method described later.

[0045] The light-shielding structure 141 is not limited to including all of the upper electrode 104, the lower electrode 105, and the upper light-reflecting layer 106, but may include at least one of them (see Examples). Furthermore, the lens structure 131 is not limited to including both the lens 132 and the protective portion 133, but may include at least the lens 132 (see Examples).

[0046] [Method of manufacturing light-emitting element] A method for manufacturing the light-emitting device 100 will now be described. Figures 8 to 14 are schematic diagrams showing a method for manufacturing the light-emitting device 100.

[0047] First, as shown in FIG. 8, a light-emitting element 150 is fabricated. The light-emitting element 150 has the same configuration as the light-emitting element 100, except that the substrate 101 does not have the lens structure 131 and does not have the wax 108 or the support substrate 109, and has a light-shielding structure 141. Each component of the light-emitting element 150 can be fabricated using a general semiconductor process. Next, as shown in FIG. 9, a photosensitive layer 161 is laminated on the second main surface 101b of the substrate 101. The photosensitive layer 161 is made of a photosensitive material whose solubility increases upon exposure, and the photosensitive material is, for example, a positive photoresist.

[0048] 10, light having a predetermined exposure wavelength is irradiated from the first main surface 101a side to expose the photosensitive layer 161. The upper electrode 104, the lower electrode 105, and the upper light-reflecting layer 106 constitute the light-shielding structure 141 (see FIGS. 5 and 6) as described above, and light L incident on the light-shielding structure 141 is a is blocked by the light blocking structure 141. On the other hand, light L that does not enter the light blocking structure 141 b The light passes through the transparent conductive layer 102, the insulating layer 103, the substrate 101, etc. and enters the photosensitive layer 161, where it modifies the photosensitive material to form a modified region. As a result, a modified region where the photosensitive material is modified and an unmodified region where the photosensitive material is not modified are formed in the photosensitive layer 161.

[0049] 11 is a schematic diagram showing the non-modified region 161a and the modified region 161b formed in the photosensitive layer 161. As shown in the figure, the unmodified region 161a and the modified region 161b are formed in the photosensitive layer 161 by the light L b A modified region 161b is formed in the region where the light is incident. Next, a developer is supplied to the photosensitive layer 161, and the modified region 161b is dissolved and removed as shown in FIG. 12. As a result, a pattern consisting of only the unmodified region 161a is formed in the photosensitive layer 161. Note that a taper is formed around the periphery of the unmodified region 161a due to the spread of light during the exposure process.

[0050] 15 is a schematic diagram showing the shape of the non-altered region 161a, and is a view of the photosensitive layer 161 viewed from a direction (Z direction) perpendicular to the first main surface 101a. The non-altered region 161a is a region where light is blocked by the light-shielding structure 141 (see FIG. 6), and therefore the non-altered region 161a is formed in a pattern corresponding to the light-shielding structure 141. Specifically, as shown in FIG. 15, the outer shape of the non-altered region 161a viewed from a direction (Z direction) perpendicular to the first main surface 101a is similar to the outer shape of the light-shielding structure 141 viewed from the same direction (Z direction), and the center of gravity of the non-altered region 161a viewed from the same direction (Z direction) coincides with the center of gravity of the light-shielding structure 141 viewed from the same direction (Z direction).

[0051] Next, the photosensitive layer 161 is heated and reflowed. As a result, the non-altered region 161a is balled up and changes into a shape having a predetermined radius of curvature, as shown in Fig. 13. Like the non-altered region 161a before being balled up, the balled-up non-altered region 161a has an outer shape (the same as Fig. 15) seen from a direction perpendicular to the first main surface 101a (Z direction) that is similar to the outer shape of the light-shielding structure 141 seen from the same direction (see Fig. 6), and its center of gravity seen from the same direction (Z direction) coincides with the center of gravity of the light-shielding structure 141 seen from the same direction (Z direction).

[0052] Depending on the degree of light diffusion during exposure and expansion due to ball-up, the external shape of the non-altered region 161a as viewed from a direction perpendicular to the first main surface 101a (Z direction) will be a shape that is reduced or enlarged by a certain factor compared to the external shape of the light-shielding structure 141 as viewed from the same direction (Z direction).

[0053] Next, the balled-up unaltered region 161a is used to form the lens structure 131 as shown in FIG. 14. The lens structure 131 can be formed by etching the substrate 101 using the balled-up unaltered region 161a as an etching mask. This etching can be performed by, for example, RIE (Reactive Ion Etching). In this case, the lens structure 131 is made of the same material as the substrate 101.

[0054] Alternatively, the balled-up non-altered region 161a may be used as the lens structure 131. In this case, the lens structure 131 is made of a photosensitive material that forms the photosensitive layer 161. Subsequently, the lower light-reflecting layer 107 (see FIG. 1) is laminated on the lens structure 131, and the lens structure 131 is bonded to the support substrate 109 with wax 108. The light-emitting element 100 can be manufactured as described above. Note that the manufacturing method for the light-emitting element 100 is not limited to the one shown here, and any method may be used as long as it includes at least an exposure step of the photosensitive layer 161 using the light-shielding structure 141.

[0055] [Effect of light-emitting element] The effects of the light-emitting device 100 will now be described. As described above, the light-emitting device 100 can be fabricated by blocking light with the light-shielding structure 141, patterning the photosensitive layer 161, and using the pattern to form the lens structure 131. Therefore, the light-emitting device 100 does not require substrate alignment in the fabrication process.

[0056] For comparison, Figures 16 and 17 are schematic diagrams showing a method for forming a lens structure according to the prior art. Figures 16 and 17 show a light-emitting device 250. The light-emitting device 250 includes a substrate 201, an upper electrode 204, and an upper light-reflecting layer 206, and is provided with a current injection region 222 and an insulating region 223.

[0057] In this formation method, as shown in Fig. 16, a photomask 272 having a light-shielding region 271 is placed on the back side of a substrate 201, and an image of an alignment mark M1 on the substrate 201 side and an alignment mark M2 on the photomask 272 side is captured by a camera 273. The photomask 272 and the substrate 201 are aligned so that the alignment marks M1 and M2 overlap in the captured image. At this time, even if the two alignment marks match in the captured image, there may actually be a misalignment between the center C1 of the alignment mark M1 and the center C2 of the alignment mark M2 due to the difference in refractive index between the substrate 201 and air, as shown in Fig. 16.

[0058] 17, when light L is irradiated to pattern the photosensitive layer 261, a misalignment occurs between the center D1 of the substrate 201 and the center D2 of the photomask 272, which also causes a misalignment in the pattern of the photosensitive layer 261. Therefore, when a lens structure is formed using the photosensitive layer 261, a misalignment occurs between the lens structure and the current injection region 222. The misalignment between the lens structure and the current injection region 222 causes an increase in the threshold current density and a decrease in yield.

[0059] On the other hand, in the light-emitting element 100, the photosensitive layer 161 is patterned using the light-shielding structure 141 provided on the substrate 101 as described above. This makes it possible to align the lens 132 and the current injection region 122 with high precision, thereby realizing improvements in the electrical characteristics, optical characteristics, and yield of the light-emitting element 100.

[0060] In addition, although the substrate 101 may expand and contract in the manufacturing process of the light-emitting element 100, the light-shielding structure 141 also expands and contracts in accordance with the substrate 101, and therefore it is possible to eliminate the influence of the expansion and contraction of the substrate 101. Furthermore, the manufacturing process of the light-emitting element 100 does not require a photomask except for some manufacturing processes described below, and therefore it is possible to reduce manufacturing costs by reducing photomask costs and by simplifying the photomask alignment process and exposure device.

[0061] Additionally, in the light-emitting element 100, the diameter of the lenses 132 can be controlled by the outer diameter of the light-shielding structure 141, which allows for control of the transverse mode of the light-emitting element 100. Furthermore, since a taper is formed on the outer periphery of the non-altered region 161a due to the spread of light in the exposure process (see FIG. 12), it is possible to increase the radius of curvature (ROC) of the lenses 132 and narrow the pitch of the lenses 132.

[0062] [Other lens structure shapes] As described above, the outer shape of lens structure 131 as viewed from the direction perpendicular to first main surface 101a (Z direction) is similar to the outer shape of light-shielding structure 141 as viewed from the same direction (Z direction), and the center of gravity as viewed from the same direction (Z direction) coincides with the center of gravity of light-shielding structure 141 as viewed from the same direction (Z direction) (see FIGS. 6 and 7). The shapes of light-shielding structure 141 and lens structure 131 may also have the following relationship.

[0063] Fig. 18 is a schematic diagram showing a light-shielding structure 141 having another shape that is provided in the light-emitting element 100, and is a plan view of the light-emitting element 100 as viewed from a direction perpendicular to the first main surface 101a (Z direction). Fig. 19 is a schematic diagram showing a method for forming a lens structure 131 using this light-shielding structure 141, and is a cross-sectional view taken along line BB in Fig. 18. As shown in Figs. 18 and 19, the light-shielding structure 141 may have a structure that does not include the upper light-reflecting layer 106.

[0064] 19, by using a photomask 172 having a light-shielding region 171 to shield the vicinity of the current injection region 122 from light, it is possible to form a non-altered region 161a having the shape shown in Fig. 15. Furthermore, this non-altered region 161a can be used to form a lens structure 131 having the shape shown in Fig. 7. That is, even if the outer shape of the lens structure 131 viewed from a direction perpendicular to the first main surface 101a (Z direction) does not completely match the outer shape of the light-shielding structure 141 viewed from the same direction (Z direction), it is sufficient that the outer shape is similar to the outer shape of the light-shielding structure 141 and that the center of gravity of the lens structure 131 coincides with the center of gravity of the light-shielding structure 141.

[0065] Fig. 20 is a schematic diagram showing a light-shielding structure 141 having another shape that is provided in the light-emitting element 100, and is a plan view of the light-emitting element 100 as viewed from a direction perpendicular to the first main surface 101a (Z direction). Fig. 21 is a schematic diagram showing a method for forming a lens structure 131 using this light-shielding structure 141, and is a cross-sectional view taken along line CC in Fig. 20. As shown in Figs. 20 and 21, the light-shielding structure 141 may have narrow beam portions 141a.

[0066] In this case, by generating light diffraction during exposure, it is possible to prevent the shape of the beam portion 141a from being reflected in the pattern of the non-altered region 161a. c By generating light diffraction during exposure, the light L c By making the light incident on the photosensitive layer 161, it is possible to form the non-modified region 161a that does not reflect the shape of the beam portion 141a. Whether or not light diffraction occurs during exposure can be controlled by the width of the beam portion 141a and the amount of light.

[0067] This makes it possible to form unaltered region 161a having the shape shown in Fig. 15. Furthermore, by utilizing this unaltered region 161a, lens structure 131 having the shape shown in Fig. 7 can be formed. That is, even if the outer shape of lens structure 131 viewed from a direction perpendicular to first main surface 101a (Z direction) does not completely match the outer shape of light-shielding structure 141 viewed from the same direction (Z direction), it is sufficient that the outer shape viewed from the same direction (Z direction) has the Fourier transform shape of the outer shape of light-shielding structure 141 viewed from the same direction (Z direction) and that the center of gravity coincides with the center of gravity of light-shielding structure 141.

[0068] [Back-emission structure] Although the light-emitting element 100 has been described as having a front-side emission structure in which light is emitted from the first main surface 101a of the substrate 101, it may also have a back-side emission structure in which light is emitted from the second main surface 101b of the substrate 101. FIG. 22 is a cross-sectional view of the light-emitting element 100 having a back-side emission structure. As shown in the figure, in this light-emitting element 100, the lower light-reflecting layer 107 is provided only on the lens 132, and a lower electrode 105 is provided around the lower light-reflecting layer 107. In addition, a support substrate 111 is bonded to the first main surface 101a of the substrate 101 with a conductive paste 110. The rest of the configuration is the same as that of the front-side emission light-emitting element 100.

[0069] In this configuration, when a voltage is applied to the upper electrode 104 and the lower electrode 105, light generated in the active layer 121 (see Figure 4) causes laser oscillation between the upper light-reflecting layer 106 and the lower light-reflecting layer 107, and the laser light passes through the lower light-reflecting layer 107 and is emitted from the light-emitting element 100.

[0070] [Other structures of light-emitting elements] In the above description, the light-emitting element 100 has been described as a VCSEL element, but the light-emitting element 100 may be a light-emitting element other than a VCSEL element, and the present technology is applicable to a light-emitting element having a structure equivalent to the light-shielding structure 141 and the lens structure 131.

[0071] [About the Examples] Specific examples of the light-emitting device according to this embodiment will be described below. In the following examples, the same components as those of the light-emitting device 100 will be denoted by the same reference numerals as those of the light-emitting device 100, and the description thereof will be omitted.

[0072] Example 1 23 is a cross-sectional view of a light-emitting device 1100 according to Example 1. As shown in the figure, the light-emitting device 1100 includes a transparent conductive layer 102 including a first transparent conductive layer 102a and a second transparent conductive layer 102b. The light-emitting device 1100 also includes an upper electrode 104 including a first upper electrode 104d and a second upper electrode 104e.

[0073] FIG. 24 is a schematic diagram showing a light-shielding structure 141 included in the light-emitting element 1100, and is a plan view of the light-shielding structure 141 as seen from a direction perpendicular to the first main surface 101a (Z direction). As shown in the figure, in the light-emitting element 1100, the light-shielding structure 141 is formed by an upper electrode 104, a lower electrode 105, and an upper light-reflecting layer 106. FIG. 25 is a schematic diagram showing a lens structure 131 included in the light-emitting element 1100, and is a plan view of the lens structure 131 as seen from a direction perpendicular to the first main surface 101a (Z direction). Note that FIG. 23 is a cross-sectional view taken along line DD in FIG. 24.

[0074] As shown in Figures 24 and 25, the outer shape of the lens structure 131 when viewed from a direction perpendicular to the first main surface 101a (Z direction) is similar to the outer shape of the shading structure 141 when viewed from the same direction (Z direction), and the center of gravity when viewed from a direction perpendicular to the first main surface 101a coincides with the center of gravity of the shading structure 141 when viewed from the same direction (Z direction).

[0075] 26 to 34 are schematic diagrams showing a method for manufacturing a light-emitting element 1100. As shown in FIG. 26, a current injection region 122 and an insulating region 123 are formed in a substrate 101 to form a light-emitting element 1150. Furthermore, an insulating layer 103 having a certain aperture ratio is formed on a first major surface 101a, and a first transparent conductive layer 102a is formed on the first major surface 101a and the insulating layer 103. A first upper electrode 104d and a second upper electrode 104e having a certain aperture diameter are further formed thereon. The first upper electrode 104d and the second upper electrode 104e are electrically connected via the first transparent conductive layer 102a. The gap between the first upper electrode 104d and the second upper electrode 104e is, for example, 10 μm, and the outer diameter of the first upper electrode 104d is, for example, 30 μm.

[0076] Next, as shown in Fig. 27, an upper light reflecting layer 106 is formed thereon. After that, as shown in Fig. 28, part of the upper light reflecting layer 106 is removed by dry etching to separate the upper light reflecting layer 106 from the second upper electrode 104e. Because this dry etching also removes the first transparent conductive layer 102a connecting the first upper electrode 104d and the second upper electrode 104e, a second transparent conductive layer 102b is formed as shown in Fig. 29, and the first upper electrode 104d and the second upper electrode 104e are reconnected.

[0077] Next, as shown in FIG. 30, wax 112 is applied to the first main surface 101a of the substrate 101, and the substrate 101 is bonded to a support substrate 113. Furthermore, the second main surface 101b is ground by a grinding device to thin the substrate 101. The thickness of the substrate 101 after thinning is, for example, 30 μm. Next, a photosensitive layer 161 is formed on the second main surface 101b, and exposure is performed from the first main surface 101a side as shown in FIG. 31. Light L a is blocked by the light blocking structure 141 (see FIG. 24), and the light L b This forms modified regions in the photosensitive layer 161. The modified regions are removed by etching, and a pattern of the photosensitive layer 161 consisting of non-modified regions 161a is formed as shown in FIG.

[0078] Next, the photosensitive layer 161 is heated to reflow, and the photosensitive layer 161 is balled up as shown in FIG. 32. This causes the photosensitive layer 161 to have a shape with a predetermined radius of curvature. This radius of curvature is, for example, 50 μm. Next, the balled-up photosensitive layer 161 is used to form the lens structure 131 as shown in FIG. 33. The lens structure 131 can be formed by etching the substrate 101 using the balled-up photosensitive layer 161 as an etching mask. Alternatively, the balled-up photosensitive layer 161 may be used as the lens structure 131.

[0079] Next, a lower light reflecting layer 107 is formed on the lens structure 131 as shown in Fig. 34. Furthermore, a support substrate 109 is bonded onto the lower light reflecting layer 107 with wax 108 (see Fig. 23), and the wax 112 and support substrate 113 are removed. This exposes the light emitting surface. In this manner, a light emitting device 1100 (see Fig. 23) can be manufactured.

[0080] Although the light-emitting element 1100 described above has a surface-emission structure, the light-emitting element 1100 can also have a back-emission structure. FIG. 35 is a cross-sectional view of the light-emitting element 1100 having a back-emission structure. As shown in the figure, in this light-emitting element 1100, the lower light-reflecting layer 107 is provided only on the lens 132, and a lower electrode 105 is provided around the lower light-reflecting layer 107. In addition, a support substrate 111 is bonded to the first main surface 101a of the substrate 101 with a conductive paste 110. The other configurations are the same as those of the surface-emission light-emitting element 1100.

[0081] As described above, in the light-emitting element 1100 of Example 1, the lens structure 131 is formed using the light-shielding structure 141, so that the alignment of the lens 132 and the current injection region 122 can be performed with high precision, and improvements in the electrical characteristics, optical characteristics, and yield of the light-emitting element 100 can be realized.

[0082] <Example 2> Example 2 is a modification of Example 1. Fig. 36 is a cross-sectional view of a light emitting device 1200 according to Example 2. As shown in the drawing, the light emitting device 1200 includes an upper electrode 104 including a first upper electrode 104d and a second upper electrode 104e.

[0083] FIG. 37 is a schematic diagram showing a light-shielding structure 141 included in the light-emitting element 1200, and is a plan view of the light-shielding structure 141 as viewed from a direction perpendicular to the first main surface 101a (Z direction). As shown in the figure, in the light-emitting element 1200, the light-shielding structure 141 is formed by an upper electrode 104, a lower electrode 105, and an upper light-reflecting layer 106. FIG. 38 is a schematic diagram showing a lens structure 131 included in the light-emitting element 1200, and is a plan view of the lens structure 131 as viewed from a direction perpendicular to the first main surface 101a (Z direction). Note that FIG. 36 is a cross-sectional view taken along the EE line in FIG. 37.

[0084] As shown in Figures 37 and 38, the outer shape of the lens structure 131 when viewed from a direction perpendicular to the first main surface 101a (Z direction) is similar to the outer shape of the shading structure 141 when viewed from the same direction (Z direction), and the center of gravity when viewed from the same direction (Z direction) coincides with the center of gravity of the shading structure 141 when viewed from the same direction (Z direction).

[0085] 39 to 45 are schematic diagrams showing a method for manufacturing a light-emitting element 1200. As shown in FIG. 39, a current injection region 122 and an insulating region 123 are formed in a substrate 101 to form a light-emitting element 1250. Furthermore, an insulating layer 103 having a certain aperture ratio is formed on a first major surface 101a, and a transparent conductive layer 102 is formed on the first major surface 101a and the insulating layer 103. Furthermore, a first upper electrode 104d and a second upper electrode 104e having a certain aperture diameter are formed thereon. The first upper electrode 104d and the second upper electrode 104e are electrically connected via the transparent conductive layer 102. The gap between the first upper electrode 104d and the second upper electrode 104e is, for example, 10 μm, and the outer diameter of the first upper electrode 104d is, for example, 30 μm.

[0086] Next, as shown in FIG. 40, an upper light reflecting layer 106 is formed thereon by lift-off. Next, as shown in FIG. 41, wax 112 is applied to the first main surface 101a side of the substrate 101, and it is then bonded to a support substrate 113. Furthermore, the second main surface 101b is ground by a grinding device to thin it. The thickness of the substrate 101 after thinning is, for example, 30 μm. Next, a photosensitive layer 161 is formed on the second main surface 101b, and exposure is performed from the first main surface 101a side as shown in FIG. 42. Light L a is blocked by the light blocking structure 141 (see FIG. 37), and the light L b This forms modified regions in the photosensitive layer 161. The modified regions are removed by etching, and a pattern of the photosensitive layer 161 consisting of non-modified regions 161a is formed as shown in FIG.

[0087] Next, the photosensitive layer 161 is heated to reflow, and the photosensitive layer 161 is balled up as shown in FIG. 43. This causes the photosensitive layer 161 to have a shape with a predetermined radius of curvature. This radius of curvature is, for example, 50 μm. Next, the balled-up photosensitive layer 161 is used to form the lens structure 131 as shown in FIG. 44. The lens structure 131 can be formed by etching the substrate 101 using the balled-up photosensitive layer 161 as an etching mask. Alternatively, the balled-up photosensitive layer 161 may be used as the lens structure 131.

[0088] Next, as shown in Fig. 45, a lower light reflecting layer 107 is formed on the lens structure 131. Furthermore, a support substrate 109 is bonded onto the lower light reflecting layer 107 with wax 108 (see Fig. 36), and the wax 112 and support substrate 113 are removed. This exposes the light emitting surface. In this manner, a light emitting element 1200 (see Fig. 36) can be manufactured.

[0089] Although the light-emitting element 1200 described above has a surface-emission structure, the light-emitting element 1200 can also have a back-emission structure. FIG. 46 is a cross-sectional view of the light-emitting element 1200 having a back-emission structure. As shown in the figure, in this light-emitting element 1200, the lower light-reflecting layer 107 is provided only on the lens 132, and a lower electrode 105 is provided around the lower light-reflecting layer 107. In addition, a support substrate 111 is bonded to the first main surface 101a of the substrate 101 with a conductive paste 110. The other configurations are the same as those of the surface-emission light-emitting element 1200.

[0090] As described above, in the light-emitting device 1200 according to Example 2, the lens structure 131 is formed using the light-shielding structure 141, and therefore it is possible to align the lens 132 with the current injection region 122 with high precision. Moreover, since the upper light-reflecting layer 106 is formed by lift-off, no damage to the transparent conductive layer 102 occurs due to patterning of the upper light-reflecting layer 106, and it is possible to improve electrical characteristics and yield. Furthermore, since the process of patterning the upper light-reflecting layer 106 and the subsequent process of forming the transparent conductive layer 102 are unnecessary, it is possible to reduce manufacturing costs.

[0091] Example 3 Example 3 is a modification of Example 1. Fig. 47 is a cross-sectional view of a light-emitting device 1300 according to Example 3. As shown in the figure, the light-emitting device 1300 includes an upper electrode 104 including a first upper electrode 104d and a second upper electrode 104e. The light-emitting device 1300 also includes an upper light-reflecting layer 106 in which an opening 106a and an opening 106b (see Fig. 48) are provided.

[0092] Fig. 48 is a schematic diagram showing a light-shielding structure 141 included in the light-emitting element 1300, and is a plan view of the light-shielding structure 141 as seen from a direction perpendicular to the first main surface 101a (Z direction). As shown in the figure, in the light-emitting element 1300, the light-shielding structure 141 is formed by an upper electrode 104 and a lower electrode 105. Fig. 49 is a schematic diagram showing a lens structure 131 included in the light-emitting element 1300, and is a plan view of the lens structure 131 as seen from a direction perpendicular to the first main surface 101a (Z direction). Note that Fig. 47 is a cross-sectional view taken along line FF in Fig. 48.

[0093] As shown in Figures 48 and 49, the outer shape of the lens structure 131 when viewed from a direction perpendicular to the first main surface 101a (Z direction) is similar to the outer shape of the shading structure 141 when viewed from the same direction (Z direction), and the center of gravity when viewed from the same direction (Z direction) coincides with the center of gravity of the shading structure 141 when viewed from the same direction (Z direction).

[0094] 50 to 56 are schematic diagrams showing a method for manufacturing a light-emitting element 1300. As shown in FIG. 50, a current injection region 122 and an insulating region 123 are formed in a substrate 101 to form a light-emitting element 1350. Furthermore, an insulating layer 103 having a certain aperture ratio is formed on a first major surface 101a, and a transparent conductive layer 102 is formed on the first major surface 101a and the insulating layer 103. Furthermore, a first upper electrode 104d and a second upper electrode 104e having a certain aperture diameter are formed thereon. The first upper electrode 104d and the second upper electrode 104e are electrically connected via the transparent conductive layer 102. The gap between the first upper electrode 104d and the second upper electrode 104e is, for example, 10 μm, and the outer diameter of the first upper electrode 104d is, for example, 30 μm.

[0095] Next, as shown in FIG. 51, wax 112 is applied to the first main surface 101a of the substrate 101, and the substrate 101 is bonded to a support substrate 113. Furthermore, the second main surface 101b is ground using a grinding device to thin it. The thickness of the substrate 101 after thinning is, for example, 30 μm. Next, a photosensitive layer 161 is formed on the second main surface 101b, and exposure is performed from the first main surface 101a side as shown in FIG. 52. At this time, a photomask 172 having a light-shielding region 171 is arranged on the first main surface 101a side of the light-emitting element 1350, and light is irradiated through the photomask 172. The light-shielding region 171 is arranged so as to shield the current injection region 122. Light L a is blocked by the light blocking structure 141 (see FIG. 49) and the light blocking region 171, and the light L b This forms modified regions in the photosensitive layer 161. The modified regions are removed by etching, and a pattern of the photosensitive layer 161 consisting of non-modified regions 161a is formed as shown in FIG.

[0096] Next, the photosensitive layer 161 is heated to reflow, and the photosensitive layer 161 is balled up as shown in FIG. 53. This causes the photosensitive layer 161 to have a shape with a predetermined radius of curvature. This radius of curvature is, for example, 50 μm. Next, the balled-up photosensitive layer 161 is used to form the lens structure 131 as shown in FIG. 54. The lens structure 131 can be formed by etching the substrate 101 using the balled-up photosensitive layer 161 as an etching mask. Alternatively, the balled-up photosensitive layer 161 may be used as the lens structure 131.

[0097] Next, as shown in FIG. 55, a lower light reflecting layer 107 is formed on the lens structure 131. Furthermore, as shown in FIG. 56, a support substrate 109 is bonded onto the lower light reflecting layer 107 with wax 108 (see FIG. 47), and the wax 112 and support substrate 113 are removed. This exposes the light emitting surface. Next, openings 106a and 106b (see FIG. 48) are formed in the upper light reflecting layer 106. In this manner, a light emitting device 1300 (see FIG. 47) can be manufactured.

[0098] Although the light-emitting element 1300 described above has a surface-emission structure, the light-emitting element 1300 can also have a back-emission structure. Figure 57 is a cross-sectional view of a light-emitting element 1300 having a back-emission structure. As shown in the figure, in this light-emitting element 1300, the lower light-reflecting layer 107 is provided only on the lens 132, and a lower electrode 105 is provided around the lower light-reflecting layer 107. In addition, a support substrate 111 is bonded to the first main surface 101a of the substrate 101 with a conductive paste 110. The other configurations are the same as those of the surface-emission light-emitting element 1300.

[0099] As described above, in the light-emitting device 1300 according to Example 3, the lens structure 131 is formed using the light-shielding structure 141, and therefore it is possible to align the lens 132 with the current injection region 122 with high precision. Furthermore, since the upper light-reflecting layer 106 is formed after the exposure step, no damage occurs to the transparent conductive layer 102 due to patterning of the upper light-reflecting layer 106, and it is possible to improve electrical characteristics and yield. Furthermore, since the step of forming the transparent conductive layer 102 again is not required, it is possible to reduce manufacturing costs.

[0100] Example 4 Example 4 is a modification of Example 2. Fig. 58 is a cross-sectional view of a light-emitting element 1400 according to Example 4. Fig. 59 is a schematic diagram showing a light-shielding structure 141 included in the light-emitting element 1400, and is a plan view of the light-shielding structure 141 as viewed from a direction perpendicular to the first main surface 101a (Z direction). As shown in the figure, in the light-emitting element 1400, the light-shielding structure 141 is formed by an upper electrode 104, a lower electrode 105, and an upper light-reflecting layer 106. In addition, the light-shielding structure 141 has beam portions 141a formed by the upper electrode 104.

[0101] Fig. 60 is a schematic diagram showing lens structure 131 included in light-emitting element 1400, and is a plan view of lens structure 131 as viewed from a direction perpendicular to first main surface 101a (Z direction). As shown in the figure, lens structure 131 has beam portions 131a. Fig. 58 is a cross-sectional view taken along line GG in Fig. 59.

[0102] As shown in Figures 59 and 60, the outer shape of the lens structure 131 when viewed from a direction perpendicular to the first main surface 101a (Z direction) is similar to the outer shape of the shading structure 141 when viewed from the same direction (Z direction), and the center of gravity when viewed from the same direction (Z direction) coincides with the center of gravity of the shading structure 141 when viewed from the same direction (Z direction).

[0103] 61 to 68 are schematic diagrams showing a method for manufacturing a light-emitting element 1400. As shown in Fig. 61, a current injection region 122 and an insulating region 123 are formed in a substrate 101 to form a light-emitting element 1450. Furthermore, an insulating layer 103 having a certain aperture ratio is formed on the first main surface 101a, and a transparent conductive layer 102 is formed on the first main surface 101a and the insulating layer 103. Furthermore, an upper electrode 104 is formed thereon.

[0104] Next, as shown in FIG. 62, an upper light reflecting layer 106 is formed thereon by lift-off. Next, as shown in FIG. 63, wax 112 is applied to the first main surface 101a side of the substrate 101, and it is then bonded to a support substrate 113. Furthermore, the second main surface 101b is ground by a grinding device to thin it. The thickness of the substrate 101 after thinning is, for example, 30 μm. Next, a photosensitive layer 161 is formed on the second main surface 101b, and exposure is performed from the first main surface 101a side as shown in FIG. 64. Light L a is blocked by the light blocking structure 141 (see FIG. 59), and the light L b forms modified regions in the photosensitive layer 161. The modified regions are removed by etching, and a pattern of the photosensitive layer 161 consisting of non-modified regions 161a is formed as shown in FIG.

[0105] Next, the photosensitive layer 161 is heated to reflow, and the photosensitive layer 161 is balled up as shown in FIG. 65. This causes the photosensitive layer 161 to have a shape with a predetermined radius. This radius of curvature is, for example, 50 μm. Next, the balled-up photosensitive layer 161 is used to form the lens structure 131 as shown in FIG. 66. The lens structure 131 can be formed by etching the substrate 101 using the balled-up photosensitive layer 161 as an etching mask. Alternatively, the balled-up photosensitive layer 161 may be used as the lens structure 131.

[0106] Next, as shown in Fig. 67, a lower light reflecting layer 107 is formed on the lens structure 131. Furthermore, a support substrate 109 is bonded onto the lower light reflecting layer 107 with wax 108 (see Fig. 58), and the wax 112 and support substrate 113 are removed. This exposes the light emitting surface. In this manner, a light emitting element 1400 (see Fig. 58) can be manufactured.

[0107] Although the light-emitting element 1400 described above has a surface-emitting structure, the light-emitting element 1400 can also have a back-emitting structure. Figure 68 is a cross-sectional view of a light-emitting element 1400 having a back-emitting structure. As shown in the figure, in this light-emitting element 1400, a support substrate 111 is bonded to the first main surface 101a side of the substrate 101 with a conductive paste 110. The other configurations are the same as those of the surface-emitting light-emitting element 1400.

[0108] As described above, in the light-emitting device 1400 according to Example 4, the lens structure 131 is formed using the light-shielding structure 141, and therefore it is possible to align the lens 132 with the current injection region 122 with high precision. Furthermore, since the lens structure 131 has the beam portion 131a, the current density of the transparent conductive layer 102 is reduced, and it is possible to improve the reliability and electrical characteristics. Furthermore, since the radius of curvature of the lens 132 can be increased, it is possible to lower the order of the transverse mode.

[0109] Furthermore, in the light-emitting element 1400 according to Example 4, it is also possible to prevent the beam portions 141a (see FIG. 59) of the light-shielding structure 141 from being reflected in the lens structure 131 by generating light diffraction during exposure. FIG. 69 is a cross-sectional view of a light-emitting element 1470 having this lens structure 131. FIG. 70 is a schematic diagram showing this lens structure 131, and is a plan view of the lens structure 131 as viewed from a direction perpendicular to the first main surface 101a (Z direction). As shown in FIGS. 59 and 70, the lens structure 131 does not have the beam portions 131a, and the outer shape as viewed from a direction perpendicular to the first main surface 101a (Z direction) may have a Fourier transform shape of the outer shape of the light-shielding structure 141 as viewed from the same direction (Z direction).

[0110] 71 is a cross-sectional view showing a light-emitting element 1470 having a back-emission type structure. As shown in the figure, in the light-emitting element 1470 having a back-emission type structure, the lower light-reflecting layer 107 is provided only on the lens 132, and a lower electrode 105 is provided around the lower light-reflecting layer 107. In addition, a support substrate 111 is bonded to the first main surface 101a side of the substrate 101 with a conductive paste 110. The rest of the configuration is the same as that of the surface-emission type light-emitting element 1470.

[0111] <Example 5> Example 5 is a modified example of Example 2. Fig. 72 is a cross-sectional view of a light-emitting device 1500 according to Example 5. As shown in the drawing, the light-emitting device 1500 includes an upper electrode 104 including a first upper electrode 104d, a second upper electrode 104e, and a third upper electrode 104f.

[0112] FIG. 73 is a schematic diagram showing the light-shielding structure 141 included in the light-emitting element 1500, and is a plan view of the light-shielding structure 141 as viewed from a direction perpendicular to the first main surface 101a (Z direction). As shown in the figure, in the light-emitting element 1500, the light-shielding structure 141 is formed by a first upper electrode 104d, a second upper electrode 104e, a lower electrode 105, and an upper light-reflecting layer 106. FIG. 74 is a schematic diagram showing the lens structure 131 included in the light-emitting element 1500, and is a plan view of the lens structure 131 as viewed from a direction perpendicular to the first main surface 101a (Z direction). Note that FIG. 72 is a cross-sectional view taken along line HH in FIG. 73.

[0113] As shown in Figures 73 and 74, the outer shape of the lens structure 131 when viewed from a direction perpendicular to the first main surface 101a (Z direction) is similar to the outer shape of the shading structure 141 when viewed from the same direction (Z direction), and the center of gravity when viewed from the same direction (Z direction) coincides with the center of gravity of the shading structure 141 when viewed from the same direction (Z direction).

[0114] 75 to 82 are schematic diagrams showing a method for manufacturing a light-emitting element 1500. As shown in FIG. 75, a current injection region 122 and an insulating region 123 are formed in a substrate 101 to form a light-emitting element 1550. Furthermore, an insulating layer 103 having a certain aperture ratio is formed on a first major surface 101a, and a transparent conductive layer 102 is formed on the first major surface 101a and the insulating layer 103. Furthermore, a first upper electrode 104d and a second upper electrode 104e are formed thereon. The outer diameter of the first upper electrode 104d is, for example, 30 μm.

[0115] Next, as shown in FIG. 76, an upper light reflecting layer 106 is formed thereon by lift-off. Next, as shown in FIG. 77, wax 112 is applied to the first main surface 101a side of the substrate 101, and it is then bonded to a support substrate 113. Furthermore, the second main surface 101b is ground by a grinding device to thin it. The thickness of the substrate 101 after thinning is, for example, 30 μm. Next, a photosensitive layer 161 is formed on the second main surface 101b, and exposure is performed from the first main surface 101a side as shown in FIG. 78. Light L a is blocked by the light blocking structure 141 (see FIG. 73), and the light L b forms modified regions in the photosensitive layer 161. The modified regions are removed by etching, and a pattern of the photosensitive layer 161 consisting of non-modified regions 161a is formed as shown in FIG.

[0116] Next, the photosensitive layer 161 is heated to reflow, and the photosensitive layer 161 is balled up as shown in FIG. 79. This causes the photosensitive layer 161 to have a shape with a predetermined radius. This radius of curvature is, for example, 50 μm. Next, the balled-up photosensitive layer 161 is used to form the lens structure 131 as shown in FIG. 80. The lens structure 131 can be formed by etching the substrate 101 using the balled-up photosensitive layer 161 as an etching mask. Alternatively, the balled-up photosensitive layer 161 may be used as the lens structure 131.

[0117] Next, as shown in FIG. 81, a lower light reflecting layer 107 is formed on the lens structure 131. Furthermore, as shown in FIG. 82, a support substrate 109 is bonded onto the lower light reflecting layer 107 with wax 108, and the wax 112 and support substrate 113 are removed. This exposes the light emitting surface. Furthermore, a third upper electrode 104f (see FIG. 72) is formed on the first upper electrode 104d and the insulating layer 103, and the first upper electrode 104d and the second upper electrode 104e are electrically connected. In this manner, a light emitting element 1500 (see FIG. 72) can be manufactured.

[0118] Although the light-emitting element 1500 described above has a surface-emission structure, the light-emitting element 1500 can also have a back-emission structure. Figure 83 is a cross-sectional view of a light-emitting element 1500 having a back-emission structure. As shown in the figure, in this light-emitting element 1500, the lower light-reflecting layer 107 is provided only on the lens 132, and a lower electrode 105 is provided around the lower light-reflecting layer 107. In addition, a support substrate 111 is bonded to the first main surface 101a of the substrate 101 with a conductive paste 110. The other configurations are the same as those of the surface-emission light-emitting element 1500.

[0119] As described above, in the light-emitting device 1500 according to Example 5, the lens structure 131 is formed using the light-shielding structure 141, and therefore it is possible to perform highly accurate alignment between the lens 132 and the current injection region 122. Furthermore, since the third upper electrode 104f is formed after the exposure step (see FIG. 78) and the first upper electrode 104d and the second upper electrode 104e are made conductive, it is possible to reduce the element area of ​​the light-emitting device 1500, improve yield, and reduce the wiring resistance of the upper electrode 104.

[0120] Example 6 Example 6 is a modification of Example 1. Fig. 84 is a cross-sectional view of a light-emitting device 1600 according to Example 6. Fig. 85 is a schematic diagram showing a light-shielding structure 141 included in the light-emitting device 1600, and is a plan view of the light-shielding structure 141 as seen from a direction perpendicular to the first main surface 101a (Z direction). As shown in the figure, in the light-emitting device 1600, the light-shielding structure 141 is formed by an upper electrode 104 and an upper light-reflecting layer 106. Fig. 86 is a schematic diagram showing a lens structure 131 included in the light-emitting device 1600, and is a plan view of the lens structure 131 as seen from a direction perpendicular to the first main surface 101a (Z direction). Note that Fig. 84 is a cross-sectional view taken along line II in Fig. 85.

[0121] As shown in Figures 85 and 86, the outer shape of the lens structure 131 when viewed from a direction perpendicular to the first main surface 101a (Z direction) is similar to the outer shape of the shading structure 141 when viewed from the same direction (Z direction), and the center of gravity when viewed from the same direction (Z direction) coincides with the center of gravity of the shading structure 141 when viewed from the same direction (Z direction).

[0122] 87 to 95 are schematic diagrams showing a method for manufacturing a light-emitting element 1600. As shown in FIG. 87, a current injection region 122 and an insulating region 123 are formed in a substrate 101 to form a light-emitting element 1650. Furthermore, an insulating layer 103 having a certain aperture ratio is formed on the first main surface 101a, and a transparent conductive layer 102 is formed on the first main surface 101a. Furthermore, an upper electrode 104 having a certain aperture diameter is formed thereon. The outer diameter of the upper electrode 104 is, for example, 30 μm.

[0123] Next, as shown in FIG. 88, an upper light-reflecting layer 106 is formed on the transparent conductive layer 102 and the upper electrode 104, and a portion of the upper light-reflecting layer 106 is removed by dry etching. This dry etching also removes the peripheral portion of the insulating layer 103. Next, as shown in FIG. 89, wax 112 is applied to the first main surface 101a side of the substrate 101, and the substrate 101 is bonded to a support substrate 113. Furthermore, the second main surface 101b is ground using a grinding device to thin it. The thickness of the substrate 101 after thinning is, for example, 30 μm.

[0124] Next, a photosensitive layer 161 is formed on the second main surface 101b, and exposure is performed from the first main surface 101a side as shown in FIG. a is blocked by the light blocking structure 141 (see FIG. 85), and the light L b This forms modified regions in the photosensitive layer 161. The modified regions are removed by etching, and a pattern of the photosensitive layer 161 consisting of non-modified regions 161a is formed as shown in FIG.

[0125] Next, the photosensitive layer 161 is heated to reflow, and the photosensitive layer 161 is balled up as shown in FIG. 91. This causes the photosensitive layer 161 to have a shape with a predetermined radius of curvature. This radius of curvature is, for example, 50 μm. Next, the balled-up photosensitive layer 161 is used to form the lens structure 131 as shown in FIG. 92. The lens structure 131 can be formed by etching the substrate 101 using the balled-up photosensitive layer 161 as an etching mask. Alternatively, the balled-up photosensitive layer 161 may be used as the lens structure 131.

[0126] Next, as shown in FIG. 93, a lower light reflecting layer 107 is formed on the second main surface 101b, and the lower light reflecting layer 107 on the peripheral region of the lens 132 is removed. Furthermore, as shown in FIG. 94, a lower electrode 105 is formed on the peripheral region of the lens 132 on the second main surface 101b. Furthermore, as shown in FIG. 95, a support substrate 109 is bonded onto the lower light reflecting layer 107 and the lower electrode 105 with wax 108. Next, a support substrate 111 is bonded to the first main surface 101a side of the substrate 101 with conductive paste 110 (see FIG. 84), and the wax 112 and support substrate 113 are removed. This exposes the light emitting surface. In this manner, a light emitting device 1600 (see FIG. 84) having a rear emission type structure can be manufactured.

[0127] As described above, in the light-emitting element 1600 according to Example 6, the lens structure 131 is formed using the light-shielding structure 141, and therefore it is possible to perform highly accurate alignment between the lens 132 and the current injection region 122. Furthermore, by mounting the light-emitting element 1600 using the conductive paste 110, it is possible to improve the heat dissipation of the light-emitting element 1600.

[0128] Example 7 Example 7 is a modification of Example 6. Fig. 96 is a cross-sectional view of a light-emitting element 1700 according to Example 7. As shown in the figure, the light-emitting element 1700 further includes a light-emitting element driving unit 181, a conductive layer 182, a driving unit terminal 183, and a joint unit 184. The light-emitting element driving unit 181 is, for example, a laser driver.

[0129] The light-shielding structure 141 of the light-emitting element 1700 is formed by the upper electrode 104 and the upper light-reflecting layer 106, and the shape of the light-shielding structure 141 when viewed from a direction perpendicular to the first main surface 101a (Z direction) is the same as that of Example 6 (see FIG. 85). The shape of the lens structure 131 of the light-emitting element 1700 when viewed from a direction perpendicular to the first main surface 101a (Z direction) is also the same as that of Example 6 (see FIG. 86). Therefore, the outer shape of the lens structure 131 when viewed from a direction perpendicular to the first main surface 101a (Z direction) is similar to the outer shape of the light-shielding structure 141 when viewed from the same direction (Z direction), and the center of gravity of the lens structure 131 when viewed from the same direction (Z direction) coincides with the center of gravity of the light-shielding structure 141 when viewed from the same direction (Z direction).

[0130] The manufacturing method of the light-emitting element 1700 is the same as that of the light-emitting element 1600, except for the final step. That is, after bonding the support substrate 109 onto the lower light-reflecting layer 107 and the lower electrode 105 with wax 108 (see FIG. 95), a conductive layer 182 (see FIG. 96) is provided on the upper light-reflecting layer 106 and the upper electrode 104. Furthermore, the conductive layer 182 and the driver terminal 183 are bonded by a bonding portion 184. The bonding portion 184 is, for example, an Au-Au bond. Next, the wax 108 and the support substrate 109 are removed. In this manner, the light-emitting element 1700 (see FIG. 96) having a rear-emission structure can be manufactured.

[0131] As described above, in the light-emitting element 1700 according to Example 7, the lens structure 131 is formed using the light-shielding structure 141, and therefore it is possible to perform highly accurate alignment between the lens 132 and the current injection region 122. In addition, the light-emitting element 1700 can be individually driven by the light-emitting element driving unit 181.

[0132] Example 8 Example 8 is a modification of Example 6. Fig. 97 is a cross-sectional view of a light-emitting element 1800 according to Example 8. As shown in the figure, the light-emitting element 1800 further includes a light-emitting element driving unit 181, a driving unit terminal 183, a bonding unit 184, and a transparent conductive layer 185. The light-emitting element driving unit 181 is, for example, a laser driver.

[0133] The light-shielding structure 141 of the light-emitting element 1800 is formed by the upper electrode 104 and the upper light-reflecting layer 106, and the shape of the light-shielding structure 141 when viewed from a direction perpendicular to the first main surface 101a (Z direction) is the same as that of Example 6 (see FIG. 85). The shape of the lens structure 131 of the light-emitting element 1800 when viewed from a direction perpendicular to the first main surface 101a (Z direction) is also the same as that of Example 6 (see FIG. 86). Therefore, the outer shape of the lens structure 131 when viewed from a direction perpendicular to the first main surface 101a (Z direction) is similar to the outer shape of the light-shielding structure 141 when viewed from the same direction (Z direction), and the center of gravity of the lens structure 131 when viewed from the same direction (Z direction) coincides with the center of gravity of the light-shielding structure 141 when viewed from the same direction (Z direction).

[0134] 98 to 107 are schematic diagrams showing a manufacturing method for a light-emitting element 1800. As shown in Fig. 98, a current injection region 122 and an insulating region 123 are formed in a substrate 101 to form a light-emitting element 1850. Furthermore, a transparent conductive layer 102 and an insulating layer 103 are formed on the first main surface 101a, and an upper electrode 104 is formed on the transparent conductive layer 102. The outer diameter of the upper electrode 104 is, for example, 30 µm.

[0135] Next, as shown in FIG. 99, an upper light-reflecting layer 106 is formed on the transparent conductive layer 102 and the upper electrode 104, and a portion of the upper light-reflecting layer 106 is removed by dry etching. This dry etching also removes the insulating layer 103. Next, as shown in FIG. 100, a transparent conductive layer 185 is formed on the upper electrode 104 and the upper light-reflecting layer 106. The transparent conductive layer 185 is made of, for example, ITO (Indium Tin Oxide). Next, as shown in FIG. 101, wax 112 is applied to the first main surface 101a of the substrate 101, and the substrate 101 is bonded to a support substrate 113. Furthermore, the second main surface 101b is ground using a grinding device to thin it. The thickness of the substrate 101 after thinning is, for example, 30 μm.

[0136] Next, a photosensitive layer 161 is formed on the second main surface 101b, and exposure is performed from the first main surface 101a side as shown in FIG. a is blocked by the light blocking structure 141 (see FIG. 85), and the light L b This forms modified regions in the photosensitive layer 161. The modified regions are removed by etching, and a pattern of the photosensitive layer 161 consisting of non-modified regions 161a is formed as shown in FIG.

[0137] Next, the photosensitive layer 161 is heated to reflow, and the photosensitive layer 161 is balled up as shown in FIG. 103. This causes the photosensitive layer 161 to have a shape with a predetermined radius of curvature. This radius of curvature is, for example, 50 μm. Next, the balled-up photosensitive layer 161 is used to form the lens structure 131 as shown in FIG. 104. The lens structure 131 can be formed by etching the substrate 101 using the balled-up photosensitive layer 161 as an etching mask. Alternatively, the balled-up photosensitive layer 161 may be used as the lens structure 131.

[0138] Next, as shown in FIG. 105, a lower light reflecting layer 107 is formed on the second main surface 101b, and the lower light reflecting layer 107 on the peripheral region of the lens 132 is removed. Furthermore, as shown in FIG. 106, a lower electrode 105 is formed on the peripheral region of the lens 132 on the second main surface 101b. Furthermore, as shown in FIG. 107, a support substrate 109 is bonded onto the lower light reflecting layer 107 and the lower electrode 105 with wax 108, and the wax 112 and support substrate 113 are removed. Furthermore, a transparent conductive layer 185 and a drive unit terminal 183 are bonded with a bonding portion 184 (see FIG. 97). The bonding portion 184 is, for example, an Au-Au bonding portion. Next, the wax 108 and support substrate 109 are removed. In this manner, a light emitting element 1800 (see FIG. 97) can be manufactured.

[0139] As described above, in the light-emitting element 1800 according to Example 8, the lens structure 131 is formed using the light-shielding structure 141, and therefore it is possible to perform highly accurate alignment between the lens 132 and the current injection region 122. In addition, the light-emitting element 1800 can be individually driven by the light-emitting element driving unit 181.

[0140] Example 9 Example 9 is a modification of Example 6. Fig. 108 is a cross-sectional view of a light-emitting element 1900 according to Example 9. As shown in the figure, the light-emitting element 1900 further includes a light-emitting element driving unit 181, a conductive layer 182, a driving unit terminal 183, and a bonding unit 184. The light-emitting element driving unit 181 is, for example, a laser driver.

[0141] The light-shielding structure 141 of the light-emitting element 1900 is formed by the upper electrode 104 and the upper light-reflecting layer 106, and the shape of the light-shielding structure 141 when viewed from a direction perpendicular to the first main surface 101a (Z direction) is the same as that of Example 6 (see FIG. 85). The shape of the lens structure 131 of the light-emitting element 1900 when viewed from a direction perpendicular to the first main surface 101a (Z direction) is also the same as that of Example 6 (see FIG. 86). Therefore, the outer shape of the lens structure 131 when viewed from a direction perpendicular to the first main surface 101a (Z direction) is similar to the outer shape of the light-shielding structure 141 when viewed from the same direction (Z direction), and the center of gravity of the lens structure 131 when viewed from the same direction (Z direction) coincides with the center of gravity of the light-shielding structure 141 when viewed from the same direction (Z direction).

[0142] 109 to 116 are schematic diagrams showing a method for manufacturing a light-emitting element 1900. As shown in Fig. 109, a current injection region 122 and an insulating region 123 are formed in a substrate 101 to form a light-emitting element 1950. Furthermore, a transparent conductive layer 102 and an insulating layer 103 are formed on the first main surface 101a, and an upper electrode 104 is formed on the transparent conductive layer 102 and the insulating layer 103. The outer diameter of the upper electrode 104 is, for example, 30 µm.

[0143] Next, as shown in FIG. 110, an upper light reflecting layer 106 is formed on the upper electrode 104 by lift-off. Next, as shown in FIG. 111, wax 112 is applied to the first main surface 101a side of the substrate 101, and the substrate 101 is bonded to a support substrate 113. Furthermore, the second main surface 101b is ground by a grinding device to thin the substrate 101. The thickness of the thinned substrate 101 is, for example, 30 μm.

[0144] Next, a photosensitive layer 161 is formed on the second main surface 101b, and exposure is performed from the first main surface 101a side as shown in FIG. a is blocked by the light blocking structure 141 (see FIG. 85), and the light L b forms modified regions in the photosensitive layer 161. The modified regions are removed by etching, and a pattern of the photosensitive layer 161 consisting of non-modified regions 161a is formed as shown in FIG.

[0145] Next, the photosensitive layer 161 is heated to reflow, and the photosensitive layer 161 is balled up as shown in FIG. 113. This causes the photosensitive layer 161 to have a shape with a predetermined radius of curvature. This radius of curvature is, for example, 50 μm. Next, the balled-up photosensitive layer 161 is used to form the lens structure 131 as shown in FIG. 114. The lens structure 131 can be formed by etching the substrate 101 using the balled-up photosensitive layer 161 as an etching mask. Alternatively, the balled-up photosensitive layer 161 may be used as the lens structure 131.

[0146] Next, as shown in FIG. 115, a lower light reflecting layer 107 is formed on the second main surface 101b, and the lower light reflecting layer 107 on the peripheral region of the lens 132 is removed. Furthermore, as shown in FIG. 116, a lower electrode 105 is formed on the peripheral region of the lens 132 on the second main surface 101b. Next, the wax 112 and the support substrate 113 are removed, and a conductive layer 182 (see FIG. 108) is formed on the upper electrode 104 and the upper light reflecting layer 106. Furthermore, the conductive layer 182 and the drive unit terminal 183 are bonded by a bonding portion 184. The bonding portion 184 is, for example, an Au-Au bond. In this manner, a light emitting element 1800 (see FIG. 108) can be manufactured.

[0147] As described above, in the light-emitting element 1900 according to Example 9, the lens structure 131 is formed using the light-shielding structure 141, and therefore it is possible to perform highly accurate alignment between the lens 132 and the current injection region 122. In addition, the light-emitting element 1900 can be individually driven by the light-emitting element driving unit 181.

[0148] [About this disclosure] The effects described in this disclosure are merely examples and are not limiting, and other effects may also be present. The description of multiple effects above does not necessarily mean that these effects are exhibited simultaneously. It means that at least one of the effects described above can be obtained depending on the conditions, etc., and effects not described in this disclosure may also be exhibited. Furthermore, at least two of the characteristic features described in this disclosure can be arbitrarily combined.

[0149] The present technology can also be configured as follows. (1) a substrate having a first main surface and a second main surface opposite to the first main surface, and forming a light-shielding structure on the first main surface side, the light-shielding structure being opaque to an exposure wavelength; forming a photosensitive layer made of a photosensitive material on the second main surface side of the substrate; irradiating the substrate from the first principal surface side with light having the exposure wavelength to form the photosensitive layer into a pattern corresponding to the light-shielding structure; Forming a lens using the photosensitive layer A method for manufacturing a light-emitting device. (2) A method for manufacturing the light-emitting element according to (1) above, In the step of irradiating the light having the exposure wavelength, a modified region is formed in the photosensitive layer into which light not blocked by the light-shielding structure has entered, and the modified region is removed to form the photosensitive layer into a pattern corresponding to the shape of the light-shielding structure. A method for manufacturing a light-emitting device. (3) A method for manufacturing the light-emitting element according to (2) above, In the step of irradiating the light having the exposure wavelength, the modified region is removed to form the photosensitive layer into a shape whose outer shape as viewed from a direction perpendicular to the first main surface is similar to the outer shape of the light-shielding structure as viewed from a direction perpendicular to the first main surface, and whose center of gravity as viewed from a direction perpendicular to the first main surface coincides with the center of gravity of the light-shielding structure as viewed from a direction perpendicular to the first main surface. A method for manufacturing a light-emitting device. (4) A method for manufacturing a light-emitting element according to any one of (1) to (3) above, In the step of forming the lens, the photosensitive layer is heated to ball up the photosensitive layer. A method for manufacturing a light-emitting device. (5) A method for manufacturing a light-emitting element according to (4) above, In the step of forming the lens, the balled-up photosensitive layer is used as the lens. A method for manufacturing a light-emitting device. (6) A method for manufacturing a light-emitting element according to (4) above, In the step of forming the lens, the substrate is etched using the balled-up photosensitive layer as an etching mask to form the lens. A method for manufacturing a light-emitting device. (7) A method for manufacturing a light-emitting element according to (4) above, The balled-up photosensitive layer has an outer shape seen from a direction perpendicular to the first main surface that is similar to an outer shape of the light-shielding structure seen from a direction perpendicular to the first main surface, and the center of gravity seen from a direction perpendicular to the first main surface coincides with the center of gravity of the light-shielding structure seen from a direction perpendicular to the first main surface. A method for manufacturing a light-emitting device. (8) A method for manufacturing a light-emitting element according to any one of (1) to (7) above, The substrate is made of GaN, GaAs, or InP. A method for manufacturing a light-emitting device. (9) A method for manufacturing a light-emitting element according to any one of (1) to (8) above, The light-shielding structure is made of either or both of a metal and a multilayer light-reflecting film. A method for manufacturing a light-emitting device. (10) A method for manufacturing a light-emitting element according to any one of (1) to (9) above, The photosensitive material is a positive photoresist. A method for manufacturing a light-emitting device. (11) a substrate having a first main surface and a second main surface opposite to the first main surface; a light-shielding structure formed on the first main surface side of the substrate and opaque to an exposure wavelength; a lens structure formed on the second main surface side of the substrate, the lens structure having an outer shape seen from a direction perpendicular to the first main surface similar to the outer shape of the light-shielding structure seen from a direction perpendicular to the first main surface, and the center of gravity seen from the direction perpendicular to the first main surface coinciding with the center of gravity of the light-shielding structure seen from the direction perpendicular to the first main surface; A light-emitting device comprising: (12) The light-emitting element according to (11) above, a current injection region is provided in the substrate; The lens structure includes a lens; The light emitting device further includes a light reflecting layer formed on the surface of the lens, the light reflecting layer forming a concave mirror that focuses light generated in the substrate onto the current injection region. Light-emitting element. (13) The light-emitting element according to (12) above, The center of the lens when viewed from a direction perpendicular to the first principal surface coincides with the center of the current injection region when viewed from a direction perpendicular to the first principal surface. Light-emitting element. (14) The light-emitting device according to any one of (11) to (13) above, The substrate is made of GaN, GaAs, or InP. Light-emitting element. (15) The light-emitting device according to any one of (11) to (14) above, The light-shielding structure is made of either or both of a metal and a multilayer light-reflecting film. Light-emitting element. (16) The light-emitting device according to any one of (11) to (15) above, The lens structure is made of the same material as the substrate. Light-emitting element. (17) The light-emitting device according to any one of (11) to (15) above, The lens structure is made of a photosensitive material. Light-emitting element. [Explanation of symbols]

[0150] 100...Light emitting element 101... Circuit board 101a...first principal surface 101b…Second main surface 102...Transparent conductive layer 103...insulating layer 104...Top electrode 105...Lower electrode 106...Top light reflective layer 107...Lower light reflective layer 121...Active layer 122...Current injection region 123...Isolation area 131...Lens structure 132...Lens 133...Protection Department 141…Light-shielding structure 161...Photosensitive layer 161a...Non-denatured region 161b…denatured region

Claims

1. a substrate having a first main surface and a second main surface opposite to the first main surface, and a light-shielding structure that is opaque to the exposure wavelength is formed on the first main surface side of the substrate; forming a photosensitive layer made of a photosensitive material on the second main surface side of the substrate; irradiating the substrate from the first principal surface side with light having the exposure wavelength to form the photosensitive layer into a pattern corresponding to the light-shielding structure; Forming a lens using the photosensitive layer A method for manufacturing a light-emitting device.

2. 2. A method for manufacturing a light-emitting element according to claim 1, comprising: In the step of irradiating the light having the exposure wavelength, a modified region is formed in the photosensitive layer into which light not blocked by the light-shielding structure has entered, and the modified region is removed to form the photosensitive layer into a pattern corresponding to the shape of the light-shielding structure. A method for manufacturing a light-emitting device.

3. 3. The method for manufacturing a light-emitting element according to claim 2, In the step of irradiating the light having the exposure wavelength, the modified region is removed to form the photosensitive layer into a shape in which the outer shape, as viewed from a direction perpendicular to the first main surface, is similar to the outer shape of the light-shielding structure as viewed from a direction perpendicular to the first main surface, and the center of gravity, as viewed from a direction perpendicular to the first main surface, coincides with the center of gravity of the light-shielding structure as viewed from a direction perpendicular to the first main surface. A method for manufacturing a light-emitting device.

4. 2. A method for manufacturing a light-emitting element according to claim 1, comprising: In the step of forming the lens, the photosensitive layer is heated to ball up the photosensitive layer. A method for manufacturing a light-emitting device.

5. 5. The method for manufacturing a light-emitting element according to claim 4, In the step of forming the lens, the balled-up photosensitive layer is used as the lens. A method for manufacturing a light-emitting device.

6. 5. The method for manufacturing a light-emitting element according to claim 4, In the step of forming the lens, the substrate is etched using the balled-up photosensitive layer as an etching mask to form the lens. A method for manufacturing a light-emitting device.

7. 5. The method for manufacturing a light-emitting element according to claim 4, The balled-up photosensitive layer has an outer shape, as viewed from a direction perpendicular to the first main surface, similar to an outer shape of the light-shielding structure as viewed from a direction perpendicular to the first main surface, and a center of gravity, as viewed from a direction perpendicular to the first main surface, coincides with the center of gravity of the light-shielding structure as viewed from a direction perpendicular to the first main surface. A method for manufacturing a light-emitting device.

8. 2. A method for manufacturing a light-emitting element according to claim 1, comprising: The substrate is made of GaN, GaAs, or InP. A method for manufacturing a light-emitting device.

9. 2. A method for manufacturing a light-emitting element according to claim 1, comprising: The light-shielding structure is made of either or both of a metal and a multilayer light-reflecting film. A method for manufacturing a light-emitting device.

10. 2. A method for manufacturing a light-emitting element according to claim 1, comprising: The photosensitive material is a positive photoresist. A method for manufacturing a light-emitting device.

11. a substrate having a first main surface and a second main surface opposite to the first main surface, the substrate having a current injection region; a light-shielding structure formed on the first main surface side of the substrate and opaque to an exposure wavelength; a lens structure formed on the second main surface side of the substrate, the lens having an outer shape seen from a direction perpendicular to the first main surface similar to the outer shape of the light-shielding structure seen from a direction perpendicular to the first main surface and a center of gravity seen from a direction perpendicular to the first main surface coinciding with the center of gravity of the light-shielding structure seen from a direction perpendicular to the first main surface; a light reflecting layer formed on the surface of the lens, forming a concave mirror that focuses light generated within the substrate onto the current injection region; A light-emitting device comprising:

12. The light-emitting device according to claim 11, The center of the lens, as viewed from a direction perpendicular to the first principal surface, coincides with the center of the current injection region, as viewed from a direction perpendicular to the first principal surface. Light-emitting element.

13. The light-emitting device according to claim 11, The substrate is made of GaN, GaAs, or InP. Light-emitting element.

14. The light-emitting device according to claim 11, The light-shielding structure is made of either or both of a metal and a multilayer light-reflecting film. Light-emitting element.

15. The light-emitting device according to claim 11, The lens structure is made of the same material as the substrate. Light-emitting element.

16. The light-emitting device according to claim 11, The lens structure is made of a photosensitive material. Light-emitting element.

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