Surface light emitting element and light source device

Abstract

Provided is a surface light-emitting element which enables a simplified configuration and in which a light emission wavelength is not constrained by a substrate used during production.　A surface light-emitting element according to the present technology comprises at least one light-emitting element part including at least one organic semiconductor layer and a concave mirror that is disposed on one side of the organic semiconductor layer. With the surface light-emitting element according to the present technology, it is possible to provide a surface light-emitting element which enables a simplified configuration and in which a light emission wavelength is not constrained by a substrate used during production.

Description

[Technical Field]

[0001] The technology according to the present disclosure (hereinafter also referred to as "the technology") relates to a surface light emitting element and a light source device. [Background technology]

[0002] BACKGROUND ART Conventionally, a surface light emitting device is known that includes a light emitting layer made of an inorganic semiconductor layer and a reflecting mirror (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] International Publication No. 2018 / 083877 Summary of the Invention [Problem to be solved by the invention]

[0004] However, while conventional surface light emitting devices can be simplified in configuration, the emission wavelength is restricted by the substrate used during manufacture.

[0005] Therefore, a main object of the present technology is to provide a surface light emitting device that can be simplified in configuration and whose emission wavelength is not restricted by a substrate used during manufacturing. [Means for solving the problem]

[0006] The present technology comprises at least one organic semiconductor layer; a concave mirror disposed on one side of the organic semiconductor layer; The present invention provides a surface light emitting device having at least one light emitting element portion including: The light emitting element section may further include a reflector disposed on the other side of the organic semiconductor layer. The distance between the organic semiconductor layer and the concave mirror may be wider than the distance between the organic semiconductor layer and the reflecting mirror. The distance between the organic semiconductor layer and the concave mirror may be smaller than the distance between the organic semiconductor layer and the reflecting mirror. The at least one organic semiconductor layer may include a plurality of organic semiconductor layers with different emission wavelengths. The at least one organic semiconductor layer may include a plurality of organic semiconductor layers having different volumes. The at least one organic semiconductor layer may include a plurality of organic semiconductor layers arranged in an in-plane direction. The at least one organic semiconductor layer may include a plurality of organic semiconductor layers arranged in a stacking direction. At least one of the light-emitting element components may be a plurality of light-emitting element components arranged in an array, and the organic semiconductor layers of at least two of the plurality of light-emitting element components may have different emission wavelengths. At least one of the light-emitting element components may be a plurality of light-emitting element components arranged in an array, and the organic semiconductor layers of at least two of the plurality of light-emitting element components may be located at different positions in the stacking direction. The concave mirror may be made of a material including a metal and / or a dielectric material. The concave mirror and / or the reflecting mirror may be made of a diffraction grating. The concave mirror may have a structure in which a plurality of dielectric multilayer film reflectors corresponding to a plurality of wavelengths are stacked. The light emitting element section may further include an intermediate layer disposed between the organic semiconductor layer and the concave mirror. The intermediate layer may be made of a nitride, an oxide, a resin, a semiconductor, or an insulator. The intermediate layer may have a mesa structure. The light emitting device may further include an active layer that is disposed between the organic semiconductor layer and the concave mirror and / or between the organic semiconductor layer and the reflecting mirror and that emits excitation light that excites the organic semiconductor layer. The device may further include a transparent conductive film disposed between the reflecting mirror and the organic semiconductor layer and / or between the concave mirror and the organic semiconductor layer. The at least one light emitting element component may be a plurality of light emitting element components arranged in an array. The present technology also provides a light source device including the surface light emitting element and a driver that drives the light emitting element section. The present technology also provides a light source device including the surface light emitting element including the plurality of light emitting element portions, and a driver that drives the plurality of light emitting element portions individually. [Brief explanation of the drawings]

[0007] [Figure 1] 1 is a cross-sectional view of a surface light emitting device according to Example 1 of an embodiment of the present technology. [Figure 2] 2 is a flowchart illustrating an example of a method for manufacturing the surface light emitting device of FIG. [Figure 3] 3A and 3B are cross-sectional views of each step of a method for manufacturing the surface light emitting device of FIG. [Figure 4] 4A and 4B are cross-sectional views of each step of a method for manufacturing the surface light emitting device of FIG. [Figure 5] 5A and 5B are cross-sectional views of each step of a method for manufacturing the surface light emitting device of FIG. [Figure 6] 2A to 2C are cross-sectional views of steps in a method for manufacturing the surface light emitting device of FIG. [Figure 7] 1A and 1B are diagrams showing the emission spectra of conventional VCSELs, DFB lasers, LEDs, and OLEDs. [Figure 8] FIG. 1 is a diagram showing that the resonant mode of a surface-emitting device according to an embodiment can exist in any wavelength range. [Figure 9] FIG. 10 is a cross-sectional view of a surface light emitting device according to Example 2 of an embodiment of the present technology. [Figure 10] FIG. 10 is a cross-sectional view of a surface light emitting device according to Example 3 of an embodiment of the present technology. [Figure 11] FIG. 10 is a cross-sectional view of a surface light emitting device according to Example 4 of an embodiment of the present technology. [Figure 12] 12 is a flowchart illustrating an example of a method for manufacturing the surface light emitting device of FIG. [Figure 13]13A and 13B are cross-sectional views of each step of the method for manufacturing the surface light emitting device of FIG. [Figure 14] 14A and 14B are cross-sectional views of each step of the method for manufacturing the surface light emitting device of FIG. [Figure 15] 15A and 15B are cross-sectional views of each step of the method for manufacturing the surface light emitting device of FIG. [Figure 16] FIG. 10 is a cross-sectional view of a surface light emitting device according to Example 5 of an embodiment of the present technology. [Figure 17] FIG. 1 is a diagram showing the laminated structure of a composite DBR. [Figure 18] FIG. 10 is a cross-sectional view of a surface light emitting device according to Example 6 of an embodiment of the present technology. [Figure 19] 19 is a flowchart for explaining an example of a method for manufacturing the surface light emitting device of FIG. 18. [Figure 20] 20A and 20B are cross-sectional views of each step of the method for manufacturing the surface light emitting device of FIG. [Figure 21] 21A and 21B are cross-sectional views of each step of the method for manufacturing the surface light emitting device of FIG. [Figure 22] 22A and 22B are cross-sectional views of each step of the method for manufacturing the surface light emitting device of FIG. [Figure 23] 23A and 23B are cross-sectional views of each step of the method for manufacturing the surface light emitting device of FIG. [Figure 24] 19A to 19C are cross-sectional views of the steps of a method for manufacturing the surface light emitting device of FIG. 18. [Figure 25] FIG. 10 is a cross-sectional view of a surface light emitting device according to Example 7 of an embodiment of the present technology. [Figure 26] 26 is a flowchart illustrating an example of a method for manufacturing the surface light emitting device of FIG. 25. [Figure 27] 27A to 27C are cross-sectional views of each step of the method for manufacturing the surface light emitting device of FIG. [Figure 28] 28A and 28B are cross-sectional views of each step of the method for manufacturing the surface light emitting device of FIG. [Figure 29] 29A and 29B are cross-sectional views of each step of the method for manufacturing the surface light emitting device of FIG. [Figure 30] 30A and 30B are plan and cross-sectional views of a surface light emitting device according to Example 8 of an embodiment of the present technology. [Figure 31] 31 is a flowchart illustrating an example of a method for manufacturing the surface light emitting device of FIG. 30. [Figure 32] 32A and 32B are cross-sectional views of each step of the method for manufacturing the surface light emitting device of FIG. [Figure 33] 33A and 33B are cross-sectional views of each step of the method for manufacturing the surface light emitting device of FIG. [Figure 34] 34A and 34B are plan and cross-sectional views of a surface light emitting device according to Example 9 of an embodiment of the present technology. [Figure 35] 35A and 35B are plan and cross-sectional views of a surface light emitting device according to Example 10 of an embodiment of the present technology. [Figure 36] 36A and 36B are plan and cross-sectional views of a surface light emitting device according to Example 11 of an embodiment of the present technology. [Figure 37] FIG. 16 is a cross-sectional view of a surface light emitting device according to Example 12 of an embodiment of the present technology. [Figure 38] 38 is a flowchart illustrating an example of a method for manufacturing the surface light emitting device of FIG. 37. [Figure 39] 39A and 39B are cross-sectional views of each step of the method for manufacturing the surface light emitting device of FIG. [Figure 40] 40A to 40C are cross-sectional views of each step of a method for manufacturing the surface light emitting device of FIG. [Figure 41] 41A and 41B are cross-sectional views of each step of a method for manufacturing the surface light emitting device of FIG. [Figure 42] FIG. 20 is a cross-sectional view of a surface light emitting device according to Example 13 of an embodiment of the present technology. [Figure 43]43 is a flowchart for explaining a first example of a method for manufacturing the surface light emitting device of FIG. 42. [Figure 44] 44A and 44B are cross-sectional views of each step of a first example of a method for manufacturing the surface light emitting device of FIG. [Figure 45] 45A and 45B are cross-sectional views of each step of a first example of a method for manufacturing the surface light emitting device of FIG. [Figure 46] 43A to 43C are cross-sectional views of each step of a first example of a method for manufacturing the surface light emitting device of FIG. 42. [Figure 47] 43 is a flowchart for explaining a second example of a method for manufacturing the surface light emitting device of FIG. [Figure 48] 48A and 48B are cross-sectional views of the steps of a second example of a method for manufacturing the surface light emitting device of FIG. [Figure 49] 43 is a flowchart for explaining a third example of a method for manufacturing the surface light emitting device of FIG. [Figure 50] 50A to 50C are cross-sectional views of the steps of a third example of a method for manufacturing the surface light emitting device of FIG. [Figure 51] 43A to 43C are cross-sectional views of the steps of a third example of a method for manufacturing the surface light emitting device of FIG. 42. [Figure 52] FIG. 13 is a cross-sectional view of a surface light emitting device according to Example 14 of an embodiment of the present technology. [Figure 53] FIG. 15 is a cross-sectional view of a surface light emitting device according to Example 15 of an embodiment of the present technology. [Figure 54] 54 is a flowchart for explaining an example of a method for manufacturing the surface light emitting device of FIG. 53. [Figure 55] 55A and 55B are cross-sectional views of each step of the method for manufacturing the surface light emitting device of FIG. [Figure 56] 54A to 54C are cross-sectional views of the steps of a method for manufacturing the surface light emitting device of FIG. 53. [Figure 57] FIG. 16 is a cross-sectional view of a surface light emitting device according to Example 16 of an embodiment of the present technology. [Figure 58] FIG. 13 is a cross-sectional view of a surface light emitting device according to Example 17 of an embodiment of the present technology. [Figure 59]59 is a flowchart for explaining an example of a method for manufacturing the surface light emitting device of FIG. 58. [Figure 60] 60A and 60B are cross-sectional views of each step of a method for manufacturing the surface light emitting device of FIG. [Figure 61] 61A and 61B are cross-sectional views of each step of the method for manufacturing the surface light emitting device of FIG. [Figure 62] FIG. 13 is a cross-sectional view of a surface light emitting device according to Example 18 of an embodiment of the present technology. [Figure 63] FIG. 13 is a cross-sectional view of a surface light emitting device according to Example 19 of an embodiment of the present technology. [Figure 64] 64A and 64B are plan and cross-sectional views of a surface light emitting device according to Example 20 of an embodiment of the present technology. [Figure 65] 65A and 65B are plan and cross-sectional views of a surface light emitting device according to Example 21 of an embodiment of the present technology. [Figure 66] FIG. 22 is a cross-sectional view of a surface light emitting device according to Example 22 of an embodiment of the present technology. [Figure 67] 67 is a flowchart for explaining an example of a method for manufacturing the surface light emitting device of FIG. 66. [Figure 68] 68A to 68C are cross-sectional views of each step of the method for manufacturing the surface light emitting device of FIG. [Figure 69] 69A to 69C are cross-sectional views of each step of the method for manufacturing the surface light emitting device of FIG. [Figure 70] 70A and 70B are plan and cross-sectional views of a surface light emitting device according to Example 23 of an embodiment of the present technology. [Figure 71] 71 is a flowchart for explaining an example of a method for manufacturing the surface light emitting device of FIG. 70. [Figure 72] 72A and 72B are cross-sectional views of each step of the method for manufacturing the surface light emitting device of FIG. [Figure 73]73A and 73B are cross-sectional views of each step of the method for manufacturing the surface light emitting device of FIG. [Figure 74] 74A and 74B are cross-sectional views of each step of the method for manufacturing the surface light emitting device of FIG. [Figure 75] 75A and 75B are cross-sectional views of each step of the method for manufacturing the surface light emitting device of FIG. [Figure 76] 76A and 76B are cross-sectional views of each step of the method for manufacturing the surface light emitting device of FIG. [Figure 77] 77A and 77B are plan and cross-sectional views of a surface light emitting device according to Example 24 of an embodiment of the present technology. [Figure 78] 78A and 78B are plan and cross-sectional views of a surface light emitting device according to Example 25 of an embodiment of the present technology. [Figure 79] 79A and 79B are plan and cross-sectional views of a surface light emitting device according to Example 26 of an embodiment of the present technology. [Figure 80] 80A and 80B are plan and cross-sectional views of a surface light emitting device according to Example 27 of an embodiment of the present technology. [Figure 81] 81A and 81B are plan and cross-sectional views of a surface light emitting device according to Example 28 of an embodiment of the present technology. [Figure 82] FIG. 10 is a cross-sectional view of a surface light emitting device according to Example 29 of an embodiment of the present technology. [Figure 83] 83 is a flowchart for explaining an example of a method for manufacturing the surface light emitting device of FIG. 82. [Figure 84] 84A and 84B are cross-sectional views of each step of the method for manufacturing the surface light emitting device of FIG. [Figure 85] 85A and 85B are cross-sectional views of each step of the method for manufacturing the surface light emitting device of FIG. [Figure 86]86A and 86B are cross-sectional views of each step of the method for manufacturing the surface light emitting device of FIG. [Figure 87] 87A and 87B are cross-sectional and schematic plan views of a surface light emitting device according to Example 30 of an embodiment of the present technology. [Figure 88] 88A to 88H are diagrams showing specific examples of shapes of the organic semiconductor layer in plan view. [Figure 89] 89A to 89I are diagrams showing specific examples of shapes of the organic semiconductor layer in plan view. [Figure 90] 90A to 90H are diagrams showing specific examples of the cross-sectional shape of the organic semiconductor layer. [Figure 91] FIG. 10 is a cross-sectional view of a surface light emitting device according to a modified example. [Figure 92] 1 is a diagram illustrating an example of application of a light source device having a surface light emitting element according to the present technology to a distance measuring device. [Figure 93] 1 is a block diagram showing an example of a schematic configuration of a vehicle control system; [Figure 94] FIG. 2 is an explanatory diagram showing an example of an installation position of a distance measurement device. DETAILED DESCRIPTION OF THE INVENTION

[0008] Preferred embodiments of the present technology will be described in detail below with reference to the accompanying drawings. Note that in this specification and the drawings, components having substantially the same functional configurations are denoted by the same reference numerals, and redundant description will be omitted. The embodiments described below are representative embodiments of the present technology, and the scope of the present technology should not be interpreted narrowly. Even when it is described in this specification that the surface light emitting element and light source device according to the present technology achieve multiple effects, it is sufficient that the surface light emitting element and light source device according to the present technology achieve at least one effect. The effects described in this specification are merely examples and are not limiting, and other effects may also be achieved.

[0009] The explanation will be given in the following order: 0. Introduction 1. Surface light emitting device according to Example 1 of an embodiment of the present technology 2. Surface light emitting device according to Example 2 of an embodiment of the present technology 3. Surface light emitting device according to Example 3 of an embodiment of the present technology 4. Surface light emitting device according to Example 4 of an embodiment of the present technology 5. Surface light emitting device according to Example 5 of an embodiment of the present technology 6. Surface light emitting device according to Example 6 of an embodiment of the present technology 7. Surface light emitting device according to Example 7 of an embodiment of the present technology 8. Surface light emitting device according to Example 8 of an embodiment of the present technology 9. Surface light emitting device according to Example 9 of an embodiment of the present technology 10. Surface light emitting device according to Example 10 of an embodiment of the present technology 11. Surface light emitting device according to Example 11 of an embodiment of the present technology 12. Surface light emitting device according to Example 12 of an embodiment of the present technology 13. Surface light emitting device according to Example 13 of an embodiment of the present technology 14. Surface light emitting device according to Example 14 of an embodiment of the present technology 15. Surface light emitting device according to Example 15 of an embodiment of the present technology 16. Surface light emitting device according to Example 16 of an embodiment of the present technology 17. Surface light emitting device according to Example 17 of an embodiment of the present technology 18. Surface light emitting device according to Example 18 of an embodiment of the present technology 19. Surface light emitting device according to Example 19 of an embodiment of the present technology 20. Surface light emitting device according to Example 20 of an embodiment of the present technology 21. Surface light emitting device according to Example 21 of an embodiment of the present technology 22. Surface light emitting device according to Example 22 of an embodiment of the present technology 23. Surface light emitting device according to Example 23 of an embodiment of the present technology 24. Surface light emitting device according to Example 24 of an embodiment of the present technology 25. Surface light emitting device according to Example 25 of an embodiment of the present technology 26. Surface light emitting device according to Example 26 of an embodiment of the present technology 27. Surface light emitting device according to Example 27 of an embodiment of the present technology 28. Surface light emitting device according to Example 28 of an embodiment of the present technology 29. Surface light emitting device according to Example 29 of an embodiment of the present technology 30. Surface light emitting device according to Example 30 of an embodiment of the present technology 31. Modifications of this technology 32.Applications to electronic devices 33. Example of application of a light source device having a surface light emitting element to a distance measuring device 34. Example of distance measurement device mounted on a moving object

[0010] 0. Introduction Although various semiconductor lasers have been known in the past, inorganic semiconductor lasers, which are light-emitting elements that use inorganic semiconductors (inorganic light-emitting elements), are difficult to fabricate if their base material is not a single crystal, due to deterioration of electrical and optical characteristics caused by crystal defects. For this reason, it has been common for inorganic semiconductor lasers to select a substrate with an appropriate lattice constant for each emission wavelength and form a semiconductor laser with the desired emission wavelength using a single crystal. In other words, there is a constraint that the emission wavelength is determined by the substrate.

[0011] On the other hand, organic semiconductor lasers, which are light-emitting elements that use organic semiconductors (organic light-emitting elements), are capable of emitting and oscillating at various wavelengths, as typified by dye lasers. However, for light-emitting elements that use organic semiconductors, although light emission by current injection has been achieved in LEDs, laser oscillation by current injection had not been realized for many years. In 2018, Kyushu University confirmed laser oscillation of an organic semiconductor laser by current injection for the first time.

[0012] The device structure of organic semiconductor lasers typically consists of flat emitters arranged on a limited plane on a glass substrate or a semiconductor substrate, such as a silicon substrate. One approach reported is to form a grating structure on the substrate surface and drive oscillation by resonating in the in-plane direction of the substrate. While this method is simple and effective for initial confirmation of the operation of organic semiconductor lasers, it poses several challenges for mass production and practical application. For example, when resonating in the in-plane direction of the substrate, light leaks laterally, resulting in optical crosstalk between adjacent elements. Furthermore, the large size of the in-plane direction of the substrate makes it difficult to form a dense array. Furthermore, increasing the total number of grating lines can improve the Q factor of the resonator, thereby reducing the laser's threshold current, but this comes with a trade-off: the element becomes even larger in the lateral direction. Furthermore, the grating spacing must be equal to or less than the wavelength, making fabrication difficult and requiring the use of expensive exposure tools, such as electron beam lithography (EB) lithography, which has low throughput, is expensive, and is difficult to pattern over large areas.

[0013] Furthermore, in this organic semiconductor laser, the wavelength of light circulating in the cavity is limited to a specific wavelength, so when combined with an organic semiconductor film with a wide emission range, only light within that specific wavelength range can contribute to laser oscillation. Furthermore, organic semiconductors often deteriorate due to overheating, so it was recommended that the maximum temperature reached in the fabrication process after the formation of the organic semiconductor film be kept below 100°C.

[0014] Therefore, after intensive research in consideration of the above problems, the inventors have found that it is theoretically possible to fabricate a laser that resonates in the vertical direction (stacking direction) by combining an organic semiconductor layer and a concave mirror, and have developed a surface light emitting device according to an embodiment of the present technology as a surface light emitting device that has sublimated this finding to a practical level. Preferred examples of the surface light emitting device according to an embodiment of the present technology will be described in detail below.

[0015] <1. Surface light emitting device according to Example 1 of one embodiment of the present technology> Hereinafter, a surface light emitting device according to Example 1 of an embodiment of the present technology will be described with reference to the drawings.

[0016] <Configuration of surface-emitting element> 1 is a cross-sectional view of a surface light emitting device 10-1 according to Example 1 of an embodiment of the present technology. For convenience, the upper side in the cross-sectional views of FIG. 1 and the like will be referred to as "upper" and the lower side as "lower."

[0017] As will be described in detail below, the surface-emitting device 10-1 is a vertical-cavity surface-emitting laser (VCSEL) in which a light-emitting organic semiconductor layer is sandwiched between first and second reflecting mirrors.

[0018] 1, the surface light emitting device 10-1 includes at least one light emitting element section 50 including at least one organic semiconductor layer 101 and a concave mirror 102 arranged on one side (below) of the organic semiconductor layer 101. That is, the surface light emitting device 10-1 may be configured such that the light emitting element section 50 is a single surface emitting laser, or may be configured as a surface emitting laser array in which a plurality of light emitting element sections 50 are arranged in an array (for example, one-dimensionally or two-dimensionally).

[0019] For example, the light-emitting element section 50 further includes a reflecting mirror 103 disposed on the other side (upper side) of the organic semiconductor layer 101. That is, the light-emitting element section 50 has a vertical resonator structure in which the organic semiconductor layer 101 is disposed between the concave mirror 102 and the reflecting mirror 103.

[0020] The light-emitting element section 50 further includes, for example, an intermediate layer 100 disposed between the organic semiconductor layer 101 and the concave mirror 102. One side (lower side) of the intermediate layer 100 is provided with a convex surface 100a (more specifically, a convex curved surface), and the concave mirror 102 is provided along the convex surface 100a.

[0021] For example, the light-emitting element section 50 further includes a first transparent conductive film 104 disposed between the concave mirror 102 and the organic semiconductor layer 101. More specifically, the first transparent conductive film 104 is disposed between the intermediate layer 100 and the organic semiconductor layer 101.

[0022] For example, the light-emitting element section 50 further includes a second transparent conductive film 105 disposed between the reflector 103 and the organic semiconductor layer 101. That is, the organic semiconductor layer 101 is located between the first and second transparent conductive films 104 and 105.

[0023] The light emitting element section 50 further includes, for example, a high resistance layer 106 that surrounds the organic semiconductor layer 101 between the first and second transparent conductive films 104 and 105 .

[0024] (reflector) For example, the reflecting mirror 103 functions as a first reflecting mirror of the surface light emitting element 10-1. For example, the reflecting mirror 103 is a plane mirror. However, the reflecting mirror 103 may be a concave mirror.

[0025] The reflecting mirror 103 is made of a structure including, for example, a metal, an alloy, a dielectric, or a semiconductor.

[0026] When the reflecting mirror 103 is made of a conductor such as a metal or alloy, it can also function as an anode electrode. In this case, the reflecting mirror 103 is connected to the anode (positive electrode) of a laser driver, for example. When the reflecting mirror 103 is made of a metal or alloy, it is preferable to cover at least a portion of the reflecting mirror 103 with a protective film (passivation film) made of, for example, SiO2.

[0027] When the reflecting mirror 103 is made of a metal or an alloy, it may be made of Ag, Al, Mg, Au, Rh, or the like.

[0028] When the reflecting mirror 103 is made of a dielectric material, it can be a dielectric multilayer reflecting mirror having a pair of refractive index layers such as Ta2O5 / SiO2, SiN / SiO2, etc. When the reflecting mirror 103 is made of a dielectric material, the second transparent conductive film 105 can function as an anode electrode.

[0029] When reflecting mirror 103 is made of a semiconductor, it can be a semiconductor multilayer film reflecting mirror having pairs of refractive index layers such as AlInN / GaN, AlN / GaN, AlAs / GaAs, etc. When reflecting mirror 103 is made of a semiconductor, second transparent conductive film 105 can also function as an anode electrode.

[0030] (First transparent conductive film) For example, the first transparent conductive film 104 can function as a cathode electrode. In this case, for example, the first transparent conductive film 104 is connected to the cathode (negative electrode) of a laser driver. The first transparent conductive film 104 is made of, for example, ITO, IZO, IGZO, ITiO, graphene, etc.

[0031] (Second transparent conductive film) The second transparent conductive film 105 functions as a buffer layer that increases the efficiency of hole injection into the organic semiconductor layer 101 and prevents leakage. The second transparent conductive film 105 can also function as an anode electrode instead of the reflecting mirror 103. In this case, the second transparent conductive film 105 is connected to the anode (positive electrode) of a laser driver, for example. The second transparent conductive film 105 is made of, for example, ITO, IZO, IGZO, ITiO, graphene, etc.

[0032] (concave mirror) For example, the concave mirror 102 functions as a second reflecting mirror of the surface light emitting element 10-1. By using a concave mirror having a positive power as the second reflecting mirror, even if the cavity length is increased, the light emitted from the organic semiconductor layer 101 and the light transmitted through the organic semiconductor layer 101 can be focused on the organic semiconductor layer 101, and the optical amplification action of the organic semiconductor layer 101 can provide the gain required for laser oscillation.

[0033] The reflectance of concave mirror 102 is set to be slightly lower than the reflectance of reflecting mirror 103. In other words, concave mirror 102 serves as a reflecting mirror on the output side.

[0034] As an example, concave mirror 102 is made of a dielectric or a semiconductor. Concave mirror 102 can also be made of a metal or an alloy. In this case, it is preferable that reflecting mirror 103 is made of a dielectric or a semiconductor and serves as the reflecting mirror on the output side. When concave mirror 102 is made of a metal or an alloy, it is preferable to cover at least a portion of concave mirror 102 with a protective film made of, for example, SiO2.

[0035] When the concave mirror 102 is made of a dielectric material, it can be a dielectric multilayer reflector, such as Ta2O5 / SiO2 or SiN / SiO2.

[0036] It is known that the ratio of the stop band width to the refractive index ratio of pairs of refractive index layers that make up a multilayer reflector (for example, AlInN / GaN, AlN / GaN, AlAs / GaAs, SiN / SiO2, Ta2O5 / SiO2) increases in the order of AlInN / GaN, AlN / GaN, AlAs / GaAs, SiN / SiO2, and Ta2O5 / SiO2. In particular, dielectric multilayer reflectors having pairs such as Ta2O5 / SiO2 and SiN / SiO2 have a large ratio, so they can obtain the desired reflectivity even if the film thickness varies slightly. In other words, these dielectric multilayer reflectors are highly robust in terms of film thickness control.

[0037] Among pairs of refractive index layers that make up a multilayer reflector (for example, AlInN / GaN, AlN / GaN, AlAs / GaAs, SiN / SiO2, Ta2O5 / SiO2), it is known that a dielectric multilayer reflector having pairs such as Ta2O5 / SiO2, SiN / SiO2, etc. can obtain high reflectance with a small number of pairs. In other words, such a dielectric multilayer reflector can be manufactured in a short time, and can be made thin while obtaining high reflectance.

[0038] When the concave mirror 102 is made of a semiconductor, it may be a semiconductor multilayer reflector having pairs of refractive index layers such as AlInN / GaN, AlN / GaN, or AlAs / GaAs.

[0039] When reflecting mirror 103 is made of, for example, a dielectric or a semiconductor and used as the reflecting mirror on the output side, concave mirror 102 can also be made of a metal or an alloy. In this case, the concave mirror 102 can be made of a metal material such as Ag, Al, Mg, Au, or Rh.

[0040] (organic semiconductor layer) The positional relationship between the organic semiconductor layer 101 and the concave mirror 102 is set so that the entire organic semiconductor layer 101 falls within the range of light collected from the concave mirror 102. The organic semiconductor layer 101 has, for example, a rectangular cross-sectional shape, but may have other shapes. The organic semiconductor layer 101 has, for example, a circular or polygonal shape in a plan view, but may have other shapes.

[0041] The organic semiconductor layer 101 is a layer that emits light when holes supplied from the anode electrode and electrons supplied from the cathode electrode are recombined.

[0042] The organic semiconductor layer 101 can be made of an organic semiconductor material commonly used in OLEDs (organic light-emitting diodes). For example, the organic semiconductor layer 101 has a structure in which a hole transport layer, a light-emitting layer, and an electron transport layer are stacked in this order from the second transparent conductive film 105 side to the first transparent conductive film 104 side. The organic semiconductor layer 101 may also have a structure in which a hole transport layer, a light-emitting layer, and an electron transport layer are stacked in this order from the first transparent conductive film 104 side to the second transparent conductive film 105 side. In this case, the first transparent conductive film 104 side is the anode side, and the second transparent conductive film 105 side is the cathode side.

[0043] The light-emitting layer emits light of a predetermined wavelength (emission wavelength λ) depending on the material of the light-emitting layer due to the recombination of electrons and holes. The light-emitting layer emits, for example, red light, green light, or blue light.

[0044] The width (in-plane width) of the organic semiconductor layer 101 can be, for example, 1 μm or more and less than 4 μm, or can be, for example, 4 μm or more. Here, the width of the organic semiconductor layer 101 is, for example, 1 to 4 μm.

[0045] The thickness of the light-emitting layer can be, for example, less than 20 nm, for example, 20 nm or more and less than 300 nm, for example, 30 nm or more and less than 300 nm, or 300 nm or more.

[0046] Examples of materials for the light-emitting layer include BSBCz (4,4'-bis[(N-carbazole)styryl]biphenyl), polyfluorene polymer derivatives, (poly)paraphenylenevinylene derivatives, polyphenylene derivatives, polyvinylcarbazole derivatives, polythiophene derivatives, perylene dyes, coumarin dyes, rhodamine dyes, and these polymers doped with an organic electroluminescent material. The light-emitting layer may also serve as a hole transport layer and / or an electron transport layer.

[0047] The hole transport layer is provided to increase the efficiency of transporting holes to the light emitting layer, and the electron transport layer is provided to increase the efficiency of transporting electrons to the light emitting layer.

[0048] The thickness of each of the hole transport layer and the electron transport layer can be, for example, 100 nm, thinner than 100 nm, or thicker than 100 nm.

[0049] The organic semiconductor layer 101 may be composed of only a light-emitting layer. In this case, the second transparent conductive film 105 can also function as a hole transport layer, and the first transparent conductive film 104 can also function as an electron transport layer.

[0050] (middle class) The intermediate layer 100 is formed of a single layer as an example, but may be formed of multiple layers.

[0051] The intermediate layer 100 is made of, for example, a nitride (for example, SiN, SiON), an oxide (for example, SiO2, AlOx, Al2O3), a semiconductor (for example, GaN, AlN, GaAs, InP), silicon, diamond, a resin, or the like.

[0052] The thickness of the intermediate layer 100 can be, for example, less than 10 μm, 10 μm or more and less than 20 μm, 20 μm or more and less than 100 μm, or 100 μm or more.

[0053] Here, as an example, the thickness of the intermediate layer 100 and / or the power of the concave mirror 102 are set so that the focusing position (beam waist position) of the light reflected by the concave mirror 102 is located on the organic semiconductor layer 101 or on the reflecting mirror 103 side (upper side) of the organic semiconductor layer 101.

[0054] The intermediate layer 100 preferably has high heat dissipation properties in order to prevent heat generated during driving of the surface light emitting device 10-1 and during the concave mirror forming process during manufacturing from being transferred to the organic semiconductor layer 101, as will be described later.

[0055] It is known that the longer the cavity length, the lower the thermal resistance of the element. In other words, from the viewpoint of heat dissipation, the thicker the intermediate layer, the lower the thermal resistance of the element and the higher the heat dissipation. By using, for example, GaN (thermal conductivity: 130 W / mK) for the intermediate layer 100, the heat dissipation can be significantly improved. In addition, to similarly improve the heat dissipation, a diamond substrate (thermal conductivity: 220 W / mK), a silicon substrate (thermal conductivity: 148 W / mK), a sapphire substrate (thermal conductivity: 46 W / mK), etc. may be used for the intermediate layer 100.

[0056] The distance between the organic semiconductor layer 101 and the concave mirror 102 is wider than the distance (including 0) between the organic semiconductor layer 101 and the reflecting mirror 103. That is, the sum of the thicknesses of the first transparent conductive film 104 and the intermediate layer 100 is greater than the thickness of the second transparent conductive film 105. In this way, in the surface light emitting device 10-1, by disposing the organic semiconductor layer 101 between the concave mirror 102 and the reflecting mirror 103 and closer to the reflecting mirror 103, the distance between the organic semiconductor layer 101 and the concave mirror 102 can be made wider, and the effect of heat generated in the concave mirror formation process on the organic semiconductor layer 101 can be reduced.

[0057] (High resistance layer) The high-resistance layer 106 has a higher electrical resistance than the organic semiconductor layer 101, and functions as a current confinement portion that confines current to the organic semiconductor layer 101. The high-resistance layer 106 is made of an insulator such as SiO2, SiN, SiON, epoxy resin, or polyimide, or an intrinsic semiconductor such as silicon or germanium. Note that by using a material with a lower refractive index than the organic semiconductor layer 101, the high-resistance layer 106 can also function as a light confinement portion that confines light to the organic semiconductor layer 101.

[0058] <Operation of surface-emitting element> The operation of the surface light emitting element 10-1 will be described below. In the surface-emitting device 10-1, when a driving voltage is applied between the anode electrode and the cathode electrode by the laser driver, a current flowing from the anode side of the laser driver to the reflecting mirror 103 is injected into the organic semiconductor layer 101 via the second transparent conductive film 105. At this time, the organic semiconductor layer 101 is excited by the current and emits light, and the light travels back and forth between the concave mirror 102 and the reflecting mirror 103 while being amplified by the organic semiconductor layer 101 (at this time, the light is reflected by the concave mirror 102 while being focused near the organic semiconductor layer 101, and is reflected by the reflecting mirror 103 as parallel or weakly diffused light toward the organic semiconductor layer 101). In other words, the light resonates in the stacking direction, and when the oscillation conditions are satisfied, it is emitted as laser light from the concave mirror 102. The current injected into the organic semiconductor layer 101 flows out from the cathode electrode to the cathode side of the laser driver. For example, even when the surface light emitting device 10-1 is continuously driven for a long period of time, the heat dissipation effect of the intermediate layer 100 can suppress a rise in the temperature of the device, allowing stable operation.

[0059] <<Method of manufacturing surface-emitting device>> A method for manufacturing the surface light emitting device 10-1 will be described below with reference to the flowchart (steps S1 to S6) in FIG. 2 and the cross-sectional views in FIGS. 3A to 6. Here, as an example, a plurality of surface light emitting devices 10-1 are simultaneously produced on a single wafer (e.g., a GaN substrate) that serves as the base material of the intermediate layer 100. Next, the series of the surface light emitting devices 10-1 are separated from one another to obtain chip-shaped surface light emitting devices (surface light emitting device chips). It is also possible to simultaneously produce a plurality of surface light emitting device arrays, in which a plurality of surface light emitting devices 10-1 are two-dimensionally arranged, on a single wafer (e.g., a GaN substrate) that serves as the base material of the intermediate layer 100, and then separate the series of the surface light emitting device arrays from one another to obtain a plurality of chip-shaped surface light emitting device arrays (surface light emitting device array chips).

[0060] In the first step S1, a first transparent conductive film 104 is laminated on the surface (upper surface) of a substrate (wafer) that will become the intermediate layer 100. Specifically, the first transparent conductive film 104 is formed on the surface of a wafer (e.g., a GaN substrate) that will become the intermediate layer 100 by, for example, vacuum deposition, sputtering, CVD (Chemical Vapor Deposition), or the like (see FIG. 3A).

[0061] In the next step S2, the organic semiconductor layer 101 is formed on the first transparent conductive film 104. Specifically, first, an organic semiconductor film that will become the organic semiconductor layer 101 is formed in a solid state on the first transparent conductive film 104 by, for example, vacuum deposition, coating, or the like. Next, a resist pattern that covers the portion of the organic semiconductor film that will become the organic semiconductor layer 101 is formed using, for example, a metal material, and the organic semiconductor film is patterned by etching using the resist pattern as a mask, thereby forming the organic semiconductor layer 101 (see FIG. 3B).

[0062] In the next step S3, a high-resistance layer 106 is formed around the organic semiconductor layer 101. Specifically, a high-resistance material that will become the high-resistance layer 106 is deposited so as to cover the organic semiconductor layer 101 and the first transparent conductive film 104. Next, a resist pattern is formed that has openings in positions corresponding to the portions of the material that cover the organic semiconductor 101, and then the material is etched using the resist pattern as a mask to expose the organic semiconductor layer 101 (see FIG. 4A).

[0063] In the next step S4, the second transparent conductive film 105 is formed on the organic semiconductor layer 101 and the high resistance layer 106. Specifically, the second transparent conductive film 105 is formed on the organic semiconductor layer 101 and the high resistance layer 106 by, for example, vacuum deposition, sputtering, or the like (see FIG. 4B).

[0064] In the next step S5, the reflecting mirror 103 is formed on the second transparent conductive film 105. Specifically, the material of the reflecting mirror 103 is deposited on the second transparent conductive film 105 by, for example, vacuum deposition, sputtering, CVD, or the like (see FIG. 5A).

[0065] In the final step S6, a concave mirror 102 is formed on the rear surface (bottom surface) of the substrate (wafer) that will become the intermediate layer 100. Specifically, first, the rear surface of the substrate that will become the intermediate layer 100 is polished to thin it, and then the rear surface is etched (e.g., dry etching) to form a convex surface 100a (see FIG. 5B). Next, a material for the concave mirror 102 (e.g., a dielectric multilayer film) is formed on the convex surface 100a by, for example, vacuum deposition, sputtering, or CVD. As a result, a concave mirror 102 having a shape that conforms to the convex surface 100a is formed (see FIG. 6). Note that heat generated during the formation of the concave mirror 102 (particularly the heat generated during the formation of the convex surface 100a and any accompanying heat) is quickly dissipated to the outside via the intermediate layer 100. This allows the temperature of the organic semiconductor layer 101 to be maintained at, for example, 100°C or below, thereby suppressing thermal degradation of the organic semiconductor layer 101.

[0066] In the method for manufacturing the surface light emitting device 10-1 described above, the use of a sputtering method, in particular, when depositing the material, can prevent cracks from occurring and / or the deposition time from becoming too long. This means that there is greater freedom in the selection of materials, and for example, it is possible to use AlN, which is a polycrystalline or single-crystalline material with high thermal conductivity, as the material for the intermediate layer 100.

[0067] <Effects of surface-emitting elements> The effects of the surface light emitting device 10-1 according to Example 1 of an embodiment of the present technology will be described below. The surface light emitting device 10-1 includes at least one light emitting element section 50 including at least one organic semiconductor layer 101 and a concave mirror 102 arranged on one side of the organic semiconductor layer 101. In this case, the emission wavelength of the organic semiconductor layer 101 can be set regardless of the substrate used during manufacturing. On the other hand, in a conventional inorganic semiconductor laser in which a lattice-matched inorganic semiconductor layer is stacked on a substrate, the emission wavelength of the inorganic semiconductor layer is restricted by the substrate. Furthermore, in conventional organic semiconductor lasers that oscillate by circulating light in the in-plane direction, a grating structure is required, making the configuration complicated.

[0068] Supplementally, inorganic semiconductor lasers such as conventional VCSELs and DFB lasers shown in Fig. 7 have resonance modes with steep spectral waveforms centered on an emission wavelength restricted by the substrate, while conventional light-emitting diodes such as LEDs and OLEDs have broad spectral waveforms centered on an emission wavelength restricted by the substrate. On the other hand, as shown in Fig. 8, the surface-emitting device according to this embodiment has a great advantage in that it can arbitrarily select a resonance mode with a steep spectrum centered on any emission wavelength that is not restricted by the substrate.

[0069] As a result, the surface light emitting device 10-1 according to Example 1 can provide a surface light emitting device whose configuration can be simplified and whose emission wavelength is not restricted by the substrate used during manufacture. In other words, the surface light emitting device 10-1 has very advantageous characteristics in terms of device structure, such as high design freedom and ease of manufacture, and is nothing but a highly promising innovative device that can dramatically increase the market value of surface light emitting devices as light emitting devices.

[0070] The light-emitting element section 50 further includes a reflecting mirror 103 disposed on the other side of the organic semiconductor layer 101. This allows the surface-emitting element 10-1 to function as a surface-emitting laser.

[0071] The distance between the organic semiconductor layer 101 and the concave mirror 102 is preferably wider than the distance between the organic semiconductor layer 101 and the reflecting mirror 103 .

[0072] The concave mirror 102 is preferably made of a metal or a dielectric material, which allows high reflectivity to be obtained even with a thin film thickness.

[0073] The light-emitting element section 50 preferably further includes an intermediate layer 100 disposed between the organic semiconductor layer 101 and the concave mirror 102. This allows the intermediate layer 100 to serve as a heat dissipation path during element manufacturing and element operation.

[0074] The intermediate layer 100 is preferably made of a nitride, an oxide, a resin, or a semiconductor. That is, the surface light emitting device 10-1 has a high degree of freedom in selecting a substrate, and does not require the use of an expensive semiconductor substrate such as a GaN substrate that is also used in inorganic semiconductor lasers.

[0075] Preferably, the light-emitting element section 50 further includes a second transparent conductive film 105 disposed between the reflector 103 and the organic semiconductor layer 101. This can increase the efficiency of injecting carriers (e.g., holes) into the organic semiconductor layer 101.

[0076] The light-emitting element section 50 further includes a first transparent conductive film 104 disposed between the concave mirror 102 and the organic semiconductor layer 101. This allows the first transparent conductive film 104 to function as an electrode, and also increases the efficiency of injecting carriers (e.g., electrons) into the organic semiconductor layer 101.

[0077] The at least one light-emitting element section 50 may be a plurality of light-emitting element sections 50 arranged in an array. In this case, a surface-emitting laser array can be configured in which a plurality of light-emitting element sections 50 are arranged in an array.

[0078] The concave mirror has the property of being able to extend the resonator in a direction perpendicular to the substrate, rather than in the in-plane direction of the substrate. Therefore, the surface-emitting device 10-1 can achieve the following specific effects (1) to (7) that could not be achieved with conventional organic semiconductor lasers.

[0079] (1) The surface light emitting device 10-1 does not resonate in the in-plane direction of the substrate, so optical crosstalk (mutual noise due to leakage of light) does not occur or is unlikely to occur. (2) By setting the resonance direction of the surface light emitting device 10-1 to the vertical direction, the size in the in-plane direction of the substrate can be reduced, and it becomes possible to arrange the devices in an array at high density. (3) The surface light emitting device 10-1 can improve the Q value by forming a reflecting mirror with high reflectivity, that is, it is possible to reduce the threshold current of the laser, and there is no need to increase the size of the device in the lateral direction. (4) The surface light emitting device 10-1 does not require a fine pattern as in a grating structure, and does not require a complicated exposure process, making the manufacturing process simple. (5) The surface-emitting device 10-1 does not suffer from diffraction loss even if the cavity is long (for example, 20 μm or longer). The long cavity structure allows light of various wavelengths to circulate, so when combined with an organic semiconductor film with a wide emission range, light of various wavelengths can be effectively utilized and contribute to laser oscillation. (6) Organic semiconductors often deteriorate due to overheating, and therefore, in the device fabrication process after the formation of the organic semiconductor film, the maximum temperature must be kept below 100° C. In the surface light emitting device 10-1, this problem can be solved by devising an appropriate order of the manufacturing process. In addition, since the concave mirror 102 is positioned away from the organic semiconductor layer 101, the heat given in the concave mirror formation process can be prevented from being transmitted to the organic semiconductor layer 101. (7) In the surface light emitting device 10-1, the intermediate layer 100 can be made thicker, and the heat dissipation path can be made longer, thereby preventing overheating during device operation and enabling larger currents and stable operation over a long period of time (longer life).

[0080] <2. Surface light emitting device according to Example 2 of one embodiment of the present technology> Hereinafter, a surface light emitting device according to Example 2 of an embodiment of the present technology will be described with reference to the drawings. Fig. 9 is a cross-sectional view of a surface light emitting device 10-2 according to Example 2 of an embodiment of the present technology.

[0081] As an example, the surface light emitting device 10-2 has the same configuration as the surface light emitting device 10-1 according to Example 1, except that it does not have the second transparent conductive film 105, as shown in FIG.

[0082] The surface light emitting device 10-2 operates in the same manner as the surface light emitting device 10-1, and can be manufactured by the same manufacturing method.

[0083] Since the surface-emitting element 10-2 does not have the second transparent conductive film 105, the efficiency of injecting carriers (e.g., holes) into the organic semiconductor layer 101 is lower than that of the surface-emitting element 10-1 of Example 1, but the layer structure and manufacturing process can be simplified.

[0084] <3. Surface light emitting device according to Example 3 of one embodiment of the present technology> Hereinafter, a surface light emitting device according to Example 3 of an embodiment of the present technology will be described with reference to the drawings. Fig. 10 is a cross-sectional view of a surface light emitting device 10-3 according to Example 3 of an embodiment of the present technology.

[0085] As an example, the surface light emitting device 10-3 has a configuration generally similar to that of the surface light emitting device 10-1 according to Example 1, except that it does not have the first and second transparent conductive films 104 and 105, as shown in FIG.

[0086] The surface light emitting device 10-3 has a step portion provided in the intermediate layer 100, and an electrode member 108 serving as a cathode electrode is provided on the step portion. The intermediate layer 100 is made of a conductive material (such as a semiconductor).

[0087] In the surface light emitting device 10-3, a current flows in from the reflecting mirror 103 serving as an anode electrode and is injected into the organic semiconductor layer 101, and flows out from the electrode member 108 serving as a cathode electrode via the intermediate layer 100. In other words, a current path exists in the intermediate layer 100.

[0088] The surface light emitting device 10-3 operates in roughly the same manner as the surface light emitting device 10-1, and can be manufactured in roughly the same manner.

[0089] The surface-emitting device 10-3 does not have the first and second transparent conductive films 104 and 105, and therefore has a lower efficiency of injecting carriers (e.g., holes and electrons) into the organic semiconductor layer 101 than the surface-emitting device 10-1 of Example 1, but the layer structure and manufacturing process can be simplified.

[0090] <4. Surface light emitting device according to Example 4 of one embodiment of the present technology> Hereinafter, a surface light emitting device according to Example 4 of an embodiment of the present technology will be described with reference to the drawings. Fig. 11 is a cross-sectional view of a surface light emitting device 10-4 according to Example 4 of an embodiment of the present technology.

[0091] <Configuration of surface-emitting element> As shown in Figure 11, the surface-emitting element 10-4 has a configuration generally similar to that of the surface-emitting element 10-1 of Example 1, except that it does not have a second transparent conductive film 105 or a high-resistance layer 106, and an organic semiconductor layer 101 is provided solidly on the first transparent conductive film 104, with a current blocking layer 107 provided around it.

[0092] The current blocking layer 107 is provided in a frame shape (for example, annular shape) so as to surround at least a part (for example, an upper part) of the central part in the thickness direction of the organic semiconductor layer 101. The current blocking layer 107 is a layer having a higher electrical resistance (a layer having a lower carrier conductivity) than the organic semiconductor layer 101, and contains, for example, a high concentration of ions (for example, B ++ , H ++ It is formed by injecting

[0093] <<Method of manufacturing surface-emitting device>> A method for manufacturing the surface light emitting device 10-4 will be described below with reference to the flowchart of FIG. 12 (steps S11 to S15) and the cross-sectional views of FIGS. 13A to 15B. Here, as an example, a plurality of surface light emitting devices 10-4 are simultaneously produced on a single wafer (e.g., a GaN substrate) that serves as the base material of the intermediate layer 100. Next, the series of the surface light emitting devices 10-4 are separated from one another to obtain chip-shaped surface light emitting devices (surface light emitting device chips). It is also possible to simultaneously produce a plurality of surface light emitting device arrays, in which a plurality of surface light emitting devices 10-4 are two-dimensionally arranged, on a single wafer (e.g., a GaN substrate) that serves as the base material of the intermediate layer 100, and then separate the series of the surface light emitting device arrays from one another to obtain chip-shaped surface light emitting device arrays (surface light emitting device array chips).

[0094] In the first step S11, a first transparent conductive film 104 is laminated on the surface (upper surface) of a substrate (wafer) that will become the intermediate layer 100. Specifically, the first transparent conductive film 104 is formed on the surface of a wafer (e.g., a GaN substrate) that will become the intermediate layer 100 by, for example, vacuum deposition, sputtering, CVD, or the like (see FIG. 13A).

[0095] In the next step S12, the organic semiconductor layer 101 is formed on the first transparent conductive film 104. Specifically, an organic semiconductor film that will become the organic semiconductor layer 101 is formed in a solid state on the first transparent conductive film 104 by, for example, vacuum deposition, coating, or the like (see FIG. 13B).

[0096] In the next step S13, the current blocking layer 107 is formed on the periphery of the organic semiconductor layer 101. Specifically, a resist pattern is formed to cover the center of the organic semiconductor layer 101, and then, using the resist pattern as a mask, a high concentration of ions (e.g., B ++ , H ++ The ion implantation depth at this time is set to the upper part of the organic semiconductor layer 101. This is to prevent the ions from reaching the first transparent conductive film 104.

[0097] In the next step S14, the reflecting mirror 103 is formed on the organic semiconductor layer 101 and the current blocking layer 107. Specifically, a film of the material of the reflecting mirror 103 is formed on the organic semiconductor layer 101 and the current blocking layer 107 by, for example, vacuum deposition, sputtering, CVD, or the like (see FIG. 14B).

[0098] In the final step S15, a concave mirror 102 is formed on the back surface (lower surface) of the substrate (wafer). Specifically, first, the back surface of the substrate that will become the intermediate layer 100 is polished to thin it, and then the back surface is etched (e.g., dry etching) to form a convex surface 100a (see FIG. 15A). Next, a material for the concave mirror 102 (e.g., a dielectric multilayer film) is formed on the convex surface 100a by, for example, vacuum deposition, sputtering, or CVD. As a result, a concave mirror 102 having a shape that matches the convex surface 100a is formed (see FIG. 15B). Note that heat generated during the formation of the concave mirror 102 is quickly dissipated to the outside through the intermediate layer 100, so the temperature of the organic semiconductor layer 101 can be kept below, for example, 100°C, and thermal degradation of the organic semiconductor layer 101 can be suppressed.

[0099] The surface light emitting element 10-4 operates in substantially the same manner as the surface light emitting element 10-1.

[0100] Since the surface-emitting device 10-4 does not have the second transparent conductive film 105, the efficiency of injecting carriers (e.g., holes) into the organic semiconductor layer 101 is lower than that of the surface-emitting device 10-1 of Example 1, but the layer structure and manufacturing process can be simplified.

[0101] <5. Surface light emitting device according to Example 5 of one embodiment of the present technology> Hereinafter, a surface light emitting device according to Example 5 of an embodiment of the present technology will be described with reference to the drawings. Fig. 16 is a cross-sectional view of a surface light emitting device 10-5 according to Example 5 of an embodiment of the present technology.

[0102] As an example, as shown in FIG. 16, the surface-emitting device 10-5 has a configuration generally similar to that of the surface-emitting device 10-1 of Example 1, except that it has multiple (e.g., three) organic semiconductor layers 101 (e.g., first to third organic semiconductor layers 101A, 101B, and 101C) with different emission wavelengths, and that the concave mirror 102 and the reflecting mirror 103 each have a structure in which multiple multilayer film reflecting mirrors corresponding to multiple wavelengths (e.g., red, green, and blue) are stacked.

[0103] For example, the first to third organic semiconductor layers 101A, 101B, and 101C are arranged side by side in the in-plane direction (more specifically, the first and third organic semiconductor layers 101A and 101C sandwich the second organic semiconductor layer 101B in the in-plane direction). The first organic semiconductor layer 101A is, for example, an organic semiconductor layer that emits red light (having an emission wavelength in the red band). The second organic semiconductor layer 101B is, for example, an organic semiconductor layer that emits green light (having an emission wavelength in the green band). The third organic semiconductor layer 101C is, for example, an organic semiconductor layer that emits blue light (having an emission wavelength in the blue band).

[0104] Each of the concave mirror 102 and the reflecting mirror 103 is made wideband so as to accommodate, for example, all of red light, green light, and blue light. That is, each of the concave mirror 102 and the reflecting mirror 103 can reflect each of red light, green light, and blue light with high reflectance.

[0105] In more detail, as an example, the concave mirror 102 has a layered structure in which a multilayer film reflector (Blue DBR) corresponding to blue light (reflecting blue light with high reflectivity), a multilayer film reflector (Green DBR) corresponding to green light (reflecting green light with high reflectivity), and a multilayer film reflector (Red DBR) corresponding to red light (reflecting red light with high reflectivity) are layered in this order from the intermediate layer 100 side (top side), as shown in Figure 17.

[0106] Similarly, as an example, the reflector 103 has a laminated structure in which a multilayer reflector (Blue DBR) corresponding to blue light (reflects blue light with high reflectivity), a multilayer reflector (Green DBR) corresponding to green light (reflects green light with high reflectivity), and a multilayer reflector (Red DBR) corresponding to red light (reflects red light with high reflectivity) are laminated in this order from the intermediate layer 100 side (bottom side).

[0107] The multiple (e.g., three) DBRs in each of the concave mirror 102 and the reflecting mirror 103 are arranged in a manner that takes into consideration that light with longer wavelengths penetrates deeper into the mirror (conversely, light with shorter wavelengths penetrates shallower).

[0108] In surface-emitting element 10-5, when a driving voltage is applied between the anode electrode and the cathode electrode by the laser driver, current flowing in from the anode electrode is injected into first to third organic semiconductor layers 101A, 101B, and 101C approximately simultaneously via second transparent conductive film 105, causing each organic semiconductor layer to emit light approximately simultaneously. Light emitted from each organic semiconductor layer 101 travels back and forth between the corresponding DBR of concave mirror 102 and the corresponding DBR of reflecting mirror 103 while being amplified by the organic semiconductor layer, and is emitted to the outside from concave mirror 102 as laser light when oscillation conditions are satisfied. Finally, white light, which is a combination of red, green, and blue light, is emitted from surface-emitting element 10-5.

[0109] The surface light emitting device 10-5 can be manufactured by the same method as the surface light emitting device 10-1 according to Example 1, except that the first to third organic semiconductor layers 101A, 101B, and 101C are formed separately.

[0110] The surface light emitting device 10-5 can achieve the same effects as the surface light emitting device 10-1 according to Example 1, and because the emission wavelength of each organic semiconductor layer is not restricted by the substrate, it is possible to arrange multiple organic semiconductor layers with different emission wavelengths on the same substrate (intermediate layer 100), cause each organic semiconductor layer to emit light and oscillate laser light approximately simultaneously, and simultaneously emit laser light of multiple colors (for example, three colors). In this way, the surface light emitting device 10-5 can monolithically integrate multiple organic semiconductor layers with different emission wavelengths (for example, organic semiconductor layers corresponding to R, G, and B), and is expected to be applicable to a variety of technical fields.

[0111] <6. Surface light emitting device according to Example 6 of one embodiment of the present technology> Hereinafter, a surface light emitting device according to Example 6 of an embodiment of the present technology will be described with reference to the drawings. Fig. 18 is a cross-sectional view of a surface light emitting device 10-6 according to Example 6 of an embodiment of the present technology.

[0112] As an example, the surface-emitting device 10-6 has a configuration generally similar to that of the surface-emitting device 10-5 of Example 5, except that the multiple organic semiconductor layers 101 include at least two organic semiconductor layers 101 with different volumes and that a low refractive index layer 109 is provided, as shown in Figure 18.

[0113] In the surface-emitting device 10-6, for example, the first and third organic semiconductor layers 101A and 101C have substantially the same volume, and the second organic semiconductor layer 101B has a smaller volume than the first and third organic semiconductor layers 101A and 101C. By providing such a volume difference, it is possible to control the threshold current and output of laser oscillation of each organic semiconductor layer. This makes it possible, for example, to make the threshold current of laser oscillation obtained from the multiple organic semiconductor layers more uniform and to balance the intensity of the emitted light.

[0114] By setting the thickness of the intermediate layer 100 and / or the power of the concave mirror 102, it is possible to position the focusing position (beam waist position) of the light reflected by the concave mirror 102 within the intermediate layer 100 (for example, near the center position in the vertical direction of the intermediate layer 100). In this case, the light from the concave mirror 102 is focused within the intermediate layer 100 and then spreads as it travels, so that the irradiation range of the organic semiconductor layer 101 can be widened.

[0115] In the surface light emitting device 10-6, in accordance with the configuration for widening the irradiation range, the widths of the multiple (e.g., three) organic semiconductor layers 101 (e.g., first to third organic semiconductor layers 101A, 101B, and 101C) in the in-plane direction are widened. Here, the total width of the first to third organic semiconductor layers 101A, 101B, and 101C is set to, for example, 5 to 20 μm.

[0116] Furthermore, in the surface light emitting device 10-6, a frame-shaped (e.g., annular) low refractive index layer 109 having a lower refractive index than the intermediate layer 100 is provided around the upper periphery of the intermediate layer 100 (at a position corresponding to the high resistance layer 106). This allows the light reflected by the concave mirror 102 and temporarily focused, and then spreading as it travels, to be confined inside the low refractive index layer 109 and efficiently incident on the first to third organic semiconductor layers 101A, 101B, and 101C. The low refractive index layer 109 can be made of, for example, BCB (benzocyclobutene) 、 It is made of oxides such as SiO2, and resins such as epoxy, silicone, and polyimide.

[0117] <<Method of manufacturing surface-emitting device>> A method for manufacturing the surface light emitting device 10-6 will be described below with reference to the flowchart of FIG. 19 (steps S21 to S28) and the cross-sectional views of FIGS. 20A to 24. Here, as an example, a plurality of surface light emitting devices 10-6 are simultaneously produced on a single wafer (e.g., a GaN substrate) that serves as the base material of the intermediate layer 100. Next, the series of the surface light emitting devices 10-6 are separated from each other to obtain chip-shaped surface light emitting devices (surface light emitting device chips). It is also possible to simultaneously produce a plurality of surface light emitting device arrays, in which a plurality of surface light emitting devices 10-6 are two-dimensionally arranged, on a single wafer (e.g., a GaN substrate) that serves as the base material of the intermediate layer 100, and then separate the series of the surface light emitting device arrays from each other to obtain a plurality of chip-shaped surface light emitting device arrays (surface light emitting device array chips).

[0118] In the first step S21, mesa 100b is formed on the surface (upper surface) of a substrate (wafer) that will become intermediate layer 100. Specifically, a resist pattern is formed to cover the position where mesa 100b will be formed on the surface of the wafer (e.g., GaN substrate) that will become intermediate layer 100, and the wafer is etched using the resist pattern as a mask to form mesa 100b (see FIG. 20A).

[0119] In the next step S22, a low refractive index layer 109 is formed around the mesa 100b. Specifically, the periphery of the mesa 100b is filled with BCB to form a frame-shaped low refractive index layer 109 that surrounds the mesa 100b (see FIG. 20B).

[0120] In the next step S23, the first transparent conductive film 104 is formed on the mesa 100b and the low refractive index layer 109. Specifically, the first transparent conductive film 104 is formed on the mesa 100b and the low refractive index layer 109 by a coating method such as a vacuum deposition method, a sputtering method, a CVD (Chemical Vapor Deposition) method, a spin coating method, a baking method, or the like (see FIG. 21A).

[0121] In the next step S24, a plurality of (e.g., three) organic semiconductor layers 101 (e.g., first to third organic semiconductor layers 101A, 101B, and 101C) are formed on the first transparent conductive film 104 (see FIG. 21B). Specifically, first, an organic semiconductor film that will become the first organic semiconductor layer 101A is formed in a solid state on the first transparent conductive film 104 by, for example, vacuum deposition, coating, or the like. Next, a resist pattern is formed of, for example, a metal material, to cover the portion of the organic semiconductor film that will become the first organic semiconductor layer 101A. Next, the organic semiconductor film is patterned by etching using the resist pattern as a mask, to form the first organic semiconductor layer 101A. Next, after removing the resist pattern, an organic semiconductor film that will become the second organic semiconductor layer 101B is formed in a solid state by, for example, vacuum deposition, coating, or the like. Next, a resist pattern is formed of, for example, a metal material, to cover the portion of the organic semiconductor film that will become the second organic semiconductor layer 101B. Next, the organic semiconductor film is patterned by etching using the resist pattern as a mask to form the second organic semiconductor layer 101B. After removing the resist pattern, an organic semiconductor film that will become the third organic semiconductor layer 101B is formed in a solid state by, for example, vacuum deposition or coating. A resist pattern is then formed using, for example, a metal material to cover the portion of the organic semiconductor film that will become the third organic semiconductor layer 101C. The organic semiconductor film is then patterned by etching using the resist pattern as a mask to form the third organic semiconductor layer 101C, and the resist pattern is then removed. Thereafter, if necessary, the top surfaces of the first to third organic semiconductor layers 101A, 101B, and 101C are polished and planarized. The first to third organic semiconductor layers 101A, 101B, and 101C may also be patterned using a metal mask.

[0122] In the next step S25, a high-resistance layer 106 is formed around the plurality of organic semiconductor layers 101 (see FIG. 22A). Specifically, first, a high-resistance material that will become the high-resistance layer 106 is formed so as to cover the plurality of organic semiconductor layers 101 and the first transparent conductive film 104, and then a resist pattern having openings at positions corresponding to the portions of the high-resistance material that cover the plurality of organic semiconductor layers 101 is formed on the high-resistance material. Next, using the resist pattern as a mask, the portions of the high-resistance material that cover the plurality of organic semiconductor layers 101 are removed by etching, exposing the plurality of organic semiconductor layers 101.

[0123] In the next step S26, a second transparent conductive film 105 is formed on the plurality of organic semiconductor layers 101 and the high resistance layer 106. Specifically, the second transparent conductive film 105 is formed on the plurality of organic semiconductor layers 101 and the high resistance layer 106 by, for example, vacuum deposition, sputtering, or the like (see FIG. 22B).

[0124] In the next step S27, the reflecting mirror 103 is formed on the second transparent conductive film 105. Specifically, the material of the reflecting mirror 103 is deposited on the second transparent conductive film 105 by, for example, vacuum deposition, sputtering, CVD, or the like (see FIG. 23A).

[0125] In the final step S28, a concave mirror 102 is formed on the back surface (lower surface) of the substrate (wafer). Specifically, first, the back surface of the substrate that will become the intermediate layer 100 is polished to thin it, and then the back surface is etched (e.g., dry etching) to form a convex surface 100a (see FIG. 23B). Next, a material for the concave mirror 102 (e.g., a dielectric multilayer film) is formed on the convex surface 100a by, for example, vacuum deposition, sputtering, or CVD. As a result, a concave mirror 102 having a shape that matches the convex surface 100a is formed (see FIG. 24). Note that heat generated during the formation of the concave mirror 102 is dissipated relatively quickly to the outside through the intermediate layer 100, making it easier to maintain the temperature of each organic semiconductor layer 101 at, for example, 100°C or below, thereby suppressing thermal degradation of the organic semiconductor layer 101.

[0126] The surface light emitting device 10-6 can achieve the same effects as the surface light emitting device 10-5 according to Example 5, and can emit laser light with a large beam diameter because laser oscillation is performed by emitting light from multiple organic semiconductor layers 101 that are large in-plane width. Furthermore, the surface light emitting device 10-6 allows the intermediate layer 100 to have the mesa 100b and multiple organic semiconductor layers 101 disposed on the mesa 100b, which enables high-density arrangement when arranging the light emitting device units 50 in an array, for example.

[0127] <7. Surface light emitting device according to Example 7 of one embodiment of the present technology> Hereinafter, a surface light emitting device according to Example 7 of an embodiment of the present technology will be described with reference to the drawings. Fig. 25 is a cross-sectional view of a surface light emitting device 10-7 according to Example 7 of an embodiment of the present technology.

[0128] As an example, as shown in FIG. 25, the surface light emitting device 10-7 has a configuration generally similar to that of the surface light emitting device 10-6 according to Example 6, except that the high resistance layer 106 and the low refractive index layer 109 are not provided.

[0129] In the surface light emitting device 10-7, a reflecting mirror 103 is provided so as to cover the mesa 100b, the first to third organic semiconductor layers 101A, 101B, and 101C, and the first and second transparent conductive films 104 and 105.

[0130] In the surface light emitting device 10-7, the reflecting mirror 103 has a plane mirror portion 103a located on the plurality of organic semiconductor layers 101 and a light confinement portion 103b surrounding the plurality of organic semiconductor layers 101. Here, the reflecting mirror 103 is made of a material having a lower refractive index than the intermediate layer 100.

[0131] The surface light emitting device 10-7 operates in the same manner as the surface light emitting device 10-6 according to the sixth embodiment.

[0132] <<Method of manufacturing surface-emitting device>> A method for manufacturing the surface light emitting device 10-7 will be described below with reference to the flowchart of FIG. 26 (steps S31 to S36) and the cross-sectional views of FIGS. 27A to 29B. Here, as an example, a plurality of surface light emitting devices 10-7 are simultaneously produced on a single wafer (e.g., a GaN substrate) that serves as the base material of the intermediate layer 100. Next, the series of the surface light emitting devices 10-7 are separated from one another to obtain chip-shaped surface light emitting devices (surface light emitting device chips). It is also possible to simultaneously produce a plurality of surface light emitting device arrays, in which a plurality of surface light emitting devices 10-7 are two-dimensionally arranged, on a single wafer (e.g., a GaN substrate) that serves as the base material of the intermediate layer 100, and then separate the series of the surface light emitting device arrays from one another to obtain a plurality of chip-shaped surface light emitting device arrays (surface light emitting device array chips).

[0133] In the first step S31, mesa 100b is formed on the surface (upper surface) of a substrate (wafer) that will become intermediate layer 100. Specifically, a resist pattern is formed to cover the position where mesa 100b will be formed on the surface of the wafer (e.g., GaN substrate) that will become intermediate layer 100, and the wafer is etched using the resist pattern as a mask to form mesa 100b (see FIG. 27A).

[0134] In the next step S32, the first transparent conductive film 104 is formed on the mesa 100b. Specifically, the first transparent conductive film 104 is formed on the mesa 100b by, for example, vacuum deposition, sputtering, or CVD (Chemical Vapor Deposition) (see FIG. 27B).

[0135] In the next step S33, a plurality of (for example, three) organic semiconductor layers 101 (for example, first to third organic semiconductor layers 101A, 101B, and 101C) are formed on the first transparent conductive film 104 (see FIG. 27C). Specifically, the plurality of organic semiconductor layers 101 are formed on the first transparent conductive film 104 in the same manner as in step S24 of the flowchart in FIG.

[0136] In the next step S34, a second transparent conductive film 105 is formed on the plurality of organic semiconductor layers 101. Specifically, the second transparent conductive film 105 is formed on the plurality of organic semiconductor layers 101 by, for example, vacuum deposition, sputtering, or the like (see FIG. 28A).

[0137] In the next step S35, the reflector 103 is formed. Specifically, a material for the reflector 103 is formed by, for example, vacuum deposition, sputtering, CVD, or the like so as to cover the second transparent conductive film 105, the plurality of organic semiconductor layers 101, and the mesa 100b (see FIG. 28B). As a result, the reflector 103 is formed in a shape that follows the mesa 100b and the layers stacked on the mesa 100b.

[0138] In the final step S36, a concave mirror 102 is formed on the back surface (lower surface) of the substrate (wafer). Specifically, first, the back surface of the substrate that will become the intermediate layer 100 is polished to thin it, and then the back surface is etched (e.g., dry etching) to form a convex surface 100a (see FIG. 29A). Next, a material for the concave mirror 102 (e.g., a dielectric multilayer film) is formed on the convex surface 100a by, for example, vacuum deposition, sputtering, or CVD. As a result, a concave mirror 102 having a shape that matches the convex surface 100a is formed (see FIG. 29B). Note that heat generated during the formation of the concave mirror 102 is quickly dissipated to the outside through the intermediate layer 100, so that the temperature of each organic semiconductor layer 101 can be maintained at, for example, 100°C or below, and thermal degradation of the organic semiconductor layer 101 can be suppressed.

[0139] According to the surface light emitting device 10-7, it is possible to obtain the same effects as the surface light emitting device 10-6 according to the sixth embodiment, and also to greatly reduce the number of parts and greatly simplify the manufacturing process.

[0140] <8. Surface-emitting device according to Example 8 of one embodiment of the present technology> Hereinafter, a surface light emitting device according to Example 8 of an embodiment of the present technology will be described with reference to the drawings. Fig. 30A is a plan view of a surface light emitting device 10-8 according to Example 8 of an embodiment of the present technology. Fig. 30B is a cross-sectional view of the surface light emitting device 10-8 according to Example 8 of an embodiment of the present technology. Fig. 30B is a cross-sectional view taken along line PP of Fig. 30A.

[0141] The surface-emitting device 10-8 has a configuration similar to that of the surface-emitting device 10-6 of Example 6, except that it has a configuration that allows driving voltages to be applied individually to multiple (e.g., three) organic semiconductor layers 101, as shown in Figures 30A and 30B.

[0142] The surface light emitting element 10-8 has a plurality of reflecting mirrors 103 (for example, first to third reflecting mirrors 103A, 103B, and 103C) that correspond to a plurality of organic semiconductor layers 101 (for example, first to third organic semiconductor layers 101A, 101B, and 101C) and are insulated from each other.

[0143] The surface light emitting element 10-8 has a plurality of second transparent conductive films 105 (for example, second transparent conductive films 105A, 105B, 105C) that correspond to a plurality of organic semiconductor layers 101 (for example, first to third organic semiconductor layers 101A, 101B, 101C) and are insulated from each other.

[0144] The first transparent conductive film 104 is a cathode electrode (common electrode) common to the plurality of organic semiconductor layers 101.

[0145] In the surface-emitting device 10-8, by selectively applying a driving voltage between at least one of the multiple reflectors 103 and the first transparent conductive film 104, it is possible to selectively cause at least one of the multiple organic semiconductor layers 101 to emit light, and selectively emit laser light of at least one color out of multiple colors (e.g., three colors).

[0146] <<Method of manufacturing surface-emitting device>> A method for manufacturing the surface light emitting device 10-8 will be described below with reference to the flowchart in FIG. 31 (steps S41 to S48), and the cross-sectional views in FIGS. 20A to 22A, and 32A to 33B. Here, as an example, a plurality of surface light emitting devices 10-8 are simultaneously produced on a single wafer (e.g., a GaN substrate) that serves as the base material of the intermediate layer 100. The series of surface light emitting devices 10-8 are then separated from one another to obtain chip-shaped surface light emitting devices (surface light emitting device chips). It is also possible to simultaneously produce a plurality of surface light emitting device arrays, each having a plurality of surface light emitting devices 10-8 arranged two-dimensionally, on a single wafer (e.g., a GaN substrate) that serves as the base material of the intermediate layer 100, and then separate the series of surface light emitting device arrays from one another to obtain chip-shaped surface light emitting device arrays (surface light emitting device array chips).

[0147] In the first step S41, mesa 100b is formed on the surface (upper surface) of a substrate (wafer) that will become intermediate layer 100. Specifically, a resist pattern is formed to cover the position where mesa 100b will be formed on the surface of the wafer (e.g., GaN substrate) that will become intermediate layer 100, and the wafer is etched using the resist pattern as a mask to form mesa 100b (see FIG. 20A).

[0148] In the next step S42, a low refractive index layer 109 is formed around the mesa 100b. Specifically, the periphery of the mesa 100b is filled with BCB to form a frame-shaped low refractive index layer 109 that surrounds the mesa 100b (see FIG. 20B).

[0149] In the next step S43, the first transparent conductive film 104 is formed on the mesa 100b and the low refractive index layer 109. Specifically, the first transparent conductive film 104 is formed on the mesa 100b and the low refractive index layer 109 by, for example, vacuum deposition, sputtering, CVD (Chemical Vapor Deposition), or the like (see FIG. 21A).

[0150] In the next step S44, a plurality of (for example, three) organic semiconductor layers 101 (for example, first to third organic semiconductor layers 101A, 101B, and 101C) are formed on the first transparent conductive film 104 (see FIG. 21B). Specifically, the plurality of organic semiconductor layers 101 are formed on the first transparent conductive film 104 in the same manner as in step S24 of the flowchart in FIG. 19.

[0151] In the next step S45, a high-resistance layer 106 is formed around the plurality of organic semiconductor layers 101 (see FIG. 22A). Specifically, first, a high-resistance material that will become the high-resistance layer 106 is formed so as to cover the plurality of organic semiconductor layers 101 and the first transparent conductive film 104, and then a resist pattern is formed on the high-resistance material, with openings at positions corresponding to the portions of the high-resistance material that cover the plurality of organic semiconductor layers 101. Next, using the resist pattern as a mask, the portions of the high-resistance material that cover the plurality of organic semiconductor layers 101 are removed to expose the plurality of organic semiconductor layers 101.

[0152] In the next step S46, a plurality of second transparent conductive films 105 are formed on the plurality of organic semiconductor layers 101 (see FIG. 32A). Specifically, first, the material of the second transparent conductive film 105 is formed as a solid film on the plurality of organic semiconductor layers 101, for example, by vacuum deposition, sputtering, or the like. Next, a resist pattern is formed on the solid film made of the material of the second transparent conductive film 105, covering the portions of the solid film where the plurality of second transparent conductive films 105 will be formed. Next, the solid film is etched using the resist pattern as a mask to form a plurality of second transparent conductive films 105. After this, the resist pattern is removed.

[0153] In the next step S47, a plurality of corresponding reflecting mirrors 103 are formed on the plurality of second transparent conductive films 105 (see FIG. 32B). Specifically, first, a material for the reflecting mirror 103 is formed as a solid film on the second transparent conductive film 105 by, for example, vacuum deposition, sputtering, or CVD. Next, a resist pattern is formed on the solid film made of the material for the reflecting mirror 103, covering the areas of the solid film where the plurality of reflecting mirrors 103 will be formed. Next, the solid film is etched using the resist pattern as a mask, to form the plurality of reflecting mirrors 103.

[0154] In the final step S48, a concave mirror 102 is formed on the back surface (lower surface) of the substrate (wafer). Specifically, first, the back surface of the substrate that will become the intermediate layer 100 is polished to thin it, and then the back surface is etched (e.g., dry etching) to form a convex surface 100a (see FIG. 33A). Next, a material for the concave mirror 102 (e.g., a dielectric multilayer film) is formed on the convex surface 100a by, for example, vacuum deposition, sputtering, or CVD. As a result, a concave mirror 102 having a shape that matches the convex surface 100a is formed (see FIG. 33B). Note that heat generated during the formation of the concave mirror 102 is quickly dissipated to the outside through the intermediate layer 100, so that the temperature of each organic semiconductor layer 101 can be maintained at, for example, 100°C or below, and thermal degradation of the organic semiconductor layer 101 can be suppressed.

[0155] The surface light emitting device 10-8 can achieve the same effects as the surface light emitting device 10-6 according to Example 6, and can emit light of a desired color (for example, any one of red light, green light, and blue light, or a composite light of at least two of these lights) because voltages can be applied individually to the plurality of organic semiconductor layers 101. Furthermore, the surface light emitting device 10-8 can also adjust the color of the emitted light, which is composite light, by applying different drive voltages to the plurality of organic semiconductor layers 101.

[0156] 9. Surface-emitting device according to Example 9 of one embodiment of the present technology A surface light emitting device according to Example 9 of an embodiment of the present technology will be described below with reference to the drawings. Fig. 34A is a plan view of a surface light emitting device 10-9 according to Example 9 of an embodiment of the present technology. Fig. 34B is a cross-sectional view of the surface light emitting device 10-9 according to Example 9 of an embodiment of the present technology. Fig. 34B is a cross-sectional view taken along line PP in Fig. 34A.

[0157] 34A and 34B, the surface light emitting device 10-9 has the same configuration as the surface light emitting device 10-8 according to Example 8, except that each of the multiple (e.g., three) reflecting mirrors 103 has a grating structure (diffraction grating structure). In the surface light emitting device 10-9, as an example, the grating pitch of the grating structure is the same between the reflecting mirrors 103.

[0158] The surface emitting device 10-9 operates in the same manner as the surface emitting device 10-8 of Example 8, and can be manufactured using the same manufacturing method as the surface emitting device 10-8 of Example 8, except that each reflector 103 is formed in a grating structure.

[0159] The surface light emitting device 10-9 exhibits the same effects as the surface light emitting device 10-8 according to Example 8, and since each reflecting mirror 103 has a grating structure, high reflectivity can be obtained even with a thin film, and a thin device can be achieved while maintaining high reflectivity. Note that instead of or in addition to the reflecting mirror 103 having a grating structure, the concave mirror 102 may have a grating structure.

[0160] <10. Surface light emitting device according to Example 10 of one embodiment of the present technology> A surface light emitting device according to Example 10 of an embodiment of the present technology will be described below with reference to the drawings. Fig. 35A is a plan view of a surface light emitting device 10-10 according to Example 10 of an embodiment of the present technology. Fig. 35B is a cross-sectional view of the surface light emitting device 10-10 according to Example 10 of an embodiment of the present technology. Fig. 35B is a cross-sectional view taken along line PP of Fig. 35A.

[0161] As shown in FIGS. 35A and 35B, the surface light emitting device 10-10 has the same configuration as the surface light emitting device 10-9 according to Example 9, except that the grating pitch of the grating structure (diffraction grating structure) differs between the reflecting mirrors 103.

[0162] In the surface light emitting device 10-10, the grating pitch of the grating structure of the reflecting mirror 103 corresponding to light on the longer wavelength side is set to be larger. Specifically, the grating pitch of the first reflecting mirror 103A corresponding to the first organic semiconductor layer 101A emitting red light is set to be the largest, and the grating pitch of the third reflecting mirror 103C corresponding to the third organic semiconductor layer 101C emitting blue light is set to be the smallest. This optimizes the reflectance of each reflecting mirror 103.

[0163] The surface-emitting device 10-10 operates in the same manner as the surface-emitting device 10-9 of Example 9, and can be manufactured using the same manufacturing method as the surface-emitting device 10-9 of Example 9, except that each reflector 103 is formed so that the grating pitch of the grating structure differs between the reflectors 103.

[0164] The surface emitting device 10-10 has the same effect as the surface emitting device 10-9 of Example 9, and since the grating pitch of each reflecting mirror 103 is set to a size corresponding to the wavelength of the corresponding light, the variation in the reflectance of the corresponding light at each reflecting mirror 103 can be suppressed.

[0165] <11. Surface light emitting device according to Example 11 of one embodiment of the present technology> Hereinafter, a surface light emitting device according to Example 11 of an embodiment of the present technology will be described with reference to the drawings. Fig. 36A is a plan view of a surface light emitting device 10-11 according to Example 11 of an embodiment of the present technology. Fig. 36B is a cross-sectional view of the surface light emitting device 10-11 according to Example 11 of an embodiment of the present technology. Fig. 36B is a cross-sectional view taken along line PP of Fig. 36A.

[0166] The surface light emitting device 10-11 has the same configuration as the surface light emitting device 10-10 according to Example 10, except that the grating members constituting the grating structure of each reflector 103 are made of corrosion-resistant materials, with some exceptions.

[0167] The grating structure of each reflector 103 has at least one metallic or alloy grating member (dark gray in Figures 36A and 36B) located on the corresponding organic semiconductor layer 101, and multiple corrosion-resistant grating members (light gray in Figures 36A and 36B).

[0168] The metal or alloy grid member can function as an anode electrode in addition to functioning as a part of the reflector.

[0169] The plurality of corrosion-resistant grid members are made of, for example, an oxide such as SiO2 or a nitride such as SiN or SiON.

[0170] The surface light emitting device 10-11 has the same effects as the surface light emitting device 10-9 according to the ninth embodiment, and can operate stably for a long period of time because each reflecting mirror 103 has corrosion resistance.

[0171] <12. Surface light emitting device according to Example 12 of one embodiment of the present technology> Hereinafter, a surface light emitting device according to Example 12 of an embodiment of the present technology will be described with reference to the drawings. Fig. 37 is a cross-sectional view of a surface light emitting device 10-12 according to Example 12 of an embodiment of the present technology.

[0172] The surface-emitting device 10-12 of Example 12 has a configuration similar to that of the surface-emitting device 10-5 of Example 5, except that it has a configuration in which a driving voltage can be applied individually to multiple (e.g., three) organic semiconductor layers 101, as shown in Figure 37.

[0173] In the surface light emitting device 10-12, the first transparent conductive film 104 as a cathode electrode is separated and insulated by first and second insulating layers 111A and 111B into three electrode regions corresponding to the plurality of organic semiconductor layers 101. The first and second insulating layers 111A and 111B are, for example, insulating layers that contain high concentration ions (e.g., B ++ , H ++ The ion-implanted layer is an ion-implanted layer in which ions such as ions (e.g., ions) are implanted.

[0174] Each of the first and second insulating layers 111A and 111B extends from between two adjacent electrode regions of the first transparent conductive film 104 to the inside of the intermediate layer 100. This makes it possible to prevent a current flowing through one electrode region from flowing into another electrode region.

[0175] In the surface light emitting device 10-12, the reflecting mirror 103 is made of a metal or an alloy and also functions as an anode electrode (common electrode) common to the plurality of organic semiconductor layers 101.

[0176] In the surface-emitting device 10-12, by selectively applying a driving voltage between the reflector 103 and at least one of the three electrode regions of the first transparent conductive film 104, it is possible to selectively cause at least one of the multiple organic semiconductor layers 101 to emit light and selectively emit laser light of at least one color out of multiple colors (e.g., three colors).

[0177] <<Method of manufacturing surface-emitting device>> A method for manufacturing the surface light emitting device 10-12 will be described below with reference to the flowchart of FIG. 38 (steps S51 to S56) and the cross-sectional views of FIGS. 39A to 41B. Here, as an example, a plurality of surface light emitting devices 10-12 are simultaneously produced on a single wafer (e.g., a GaN substrate) that serves as the base material of the intermediate layer 100. Next, the series of the surface light emitting devices 10-12 are separated from one another to obtain chip-shaped surface light emitting devices (surface light emitting device chips). It is also possible to simultaneously produce a plurality of surface light emitting device arrays, in which a plurality of surface light emitting devices 10-12 are two-dimensionally arranged, on a single wafer (e.g., a GaN substrate) that serves as the base material of the intermediate layer 100, and then separate the series of the surface light emitting device arrays from one another to obtain a plurality of chip-shaped surface light emitting device arrays (surface light emitting device array chips).

[0178] In the first step S51, a first transparent conductive film 104 is formed on the surface (upper surface) of a substrate (wafer) that will become the intermediate layer 100. Specifically, the first transparent conductive film 104 is formed on the surface of the wafer by, for example, vacuum deposition, sputtering, CVD (Chemical Vapor Deposition), or the like (see FIG. 39A).

[0179] In the next step S52, the first and second insulating layers 111A and 111B are formed (see FIG. 39B). Specifically, first, a protective film is formed on the first transparent conductive film 104 so as to cover areas other than the areas where the first and second insulating layers 111A and 111B will be formed. Next, using the protective film as a mask, a high concentration of ions (for example, B ++ , H ++ The ion implantation depth at this time is set to, for example, until it reaches the inside of the intermediate layer 100.

[0180] In the next step S53, a plurality of (for example, three) organic semiconductor layers 101 (for example, first to third organic semiconductor layers 101A, 101B, and 101C) are formed on the first transparent conductive film 104 (see FIG. 40A). Specifically, the plurality of organic semiconductor layers 101 are formed on the first transparent conductive film 104 in the same manner as in step S24 of the flowchart in FIG.

[0181] In the next step S54, a high-resistance layer 106 is formed around the plurality of organic semiconductor layers 101 (see FIG. 40B). Specifically, first, a high-resistance material that will become the high-resistance layer 106 is formed so as to cover the plurality of organic semiconductor layers 101 and the first transparent conductive film 104, and then a resist pattern is formed on the high-resistance material, with openings at positions corresponding to the portions of the high-resistance material that cover the plurality of organic semiconductor layers 101. Next, using the resist pattern as a mask, the portions of the high-resistance material that cover the plurality of organic semiconductor layers 101 are removed to expose the plurality of organic semiconductor layers 101.

[0182] In the next step S55, a reflecting mirror 103 is formed on the plurality of organic semiconductor layers 101. Specifically, a film of the material of the reflecting mirror 103 is formed on the plurality of organic semiconductor layers 101 and the high-resistance layer 106 by, for example, vacuum deposition, sputtering, CVD, or the like (see FIG. 40C).

[0183] In the final step S56, a concave mirror 102 is formed on the back surface (lower surface) of the substrate (wafer). Specifically, first, the back surface of the substrate that will become the intermediate layer 100 is polished to thin it, and then the back surface is etched (e.g., dry etching) to form a convex surface 100a (see FIG. 41A). Next, a material for the concave mirror 102 (e.g., a dielectric multilayer film) is formed on the convex surface 100a by, for example, vacuum deposition, sputtering, or CVD. As a result, a concave mirror 102 having a shape that matches the convex surface 100a is formed (see FIG. 41B). Note that heat generated during the formation of the concave mirror 102 is quickly dissipated to the outside through the intermediate layer 100, so that the temperature of each organic semiconductor layer 101 can be maintained at, for example, 100°C or below, thereby suppressing thermal degradation of the organic semiconductor layer 101.

[0184] The surface light emitting device 10-12 can obtain the same effects as the surface light emitting device 10-5 according to Example 5, and can emit light of a desired color because voltages can be applied individually to the plurality of organic semiconductor layers 101. Furthermore, the surface light emitting device 10-12 can also adjust the color of the emitted light, which is composite light, by applying different driving voltages to the plurality of organic semiconductor layers 101.

[0185] <13. Surface light emitting device according to Example 13 of one embodiment of the present technology> Hereinafter, a surface light emitting device according to Example 13 of an embodiment of the present technology will be described with reference to the drawings. Fig. 42 is a cross-sectional view of a surface light emitting device 10-13 according to Example 13 of an embodiment of the present technology.

[0186] As shown in Figure 42, the surface-emitting element 10-13 has a layered structure in which a reflector 103, a first transparent conductive film 104, an organic semiconductor layer 101, a second transparent conductive film 105, an intermediate layer 100, and a concave mirror 102 are layered in this order on a substrate 112.

[0187] The substrate 112 is, for example, a semiconductor substrate, a semi-insulating substrate, an insulating substrate, or the like.

[0188] In the surface light emitting device 10-13, the distance between the organic semiconductor layer 101 and the concave mirror 102 is wider than the distance between the organic semiconductor layer 101 and the reflecting mirror 103.

[0189] In the surface light emitting device 10-13, for example, the second transparent conductive film 105 functions as an anode electrode, and the first transparent conductive film 104 functions as a cathode electrode.

[0190] The surface light emitting element 10-13 operates in substantially the same manner as the surface light emitting element 10-1 according to the first embodiment.

[0191] <First example of a method for manufacturing a surface-emitting device> A first example of a method for manufacturing the surface light emitting device 10-13 will be described below with reference to the flowchart in FIG. 43 (steps S61 to S64) and the cross-sectional views in FIGS. 44A to 46. Here, as an example, a plurality of surface light emitting devices 10-13 are simultaneously produced on a single wafer (e.g., a GaN substrate) that serves as the base material of the intermediate layer 100. Next, the series of the surface light emitting devices 10-13 are separated from one another to obtain chip-shaped surface light emitting devices (surface light emitting device chips). It is also possible to simultaneously produce a plurality of surface light emitting device arrays, in which a plurality of surface light emitting devices 10-13 are two-dimensionally arranged, on a single wafer (e.g., a GaN substrate) that serves as the base material of the intermediate layer 100, and then separate the series of the surface light emitting device arrays from one another to obtain a plurality of chip-shaped surface light emitting device arrays (surface light emitting device array chips).

[0192] In the first step S61, a first transparent conductive film 104, an organic semiconductor layer 101, a second transparent conductive film 105, and a reflecting mirror 103 are laminated in this order on the surface (upper surface) of a substrate (wafer) that will become the intermediate layer 100. Specifically, each layer is sequentially formed on the surface of a wafer (e.g., a GaN substrate) that will become the intermediate layer 100 by, for example, vacuum deposition, sputtering, CVD (Chemical Vapor Deposition), or the like (see FIG. 44A).

[0193] In the next step S62, a substrate 112 serving as a support substrate is bonded to the reflecting mirror 103 (see FIG. 44B).

[0194] In the next step S63, a convex surface 100a is formed on the back surface of the substrate that will become the intermediate layer 100. Specifically, the substrate is inverted so that the substrate 112 that serves as the support substrate becomes the bottom layer (see FIG. 45A), and the back surface of the substrate that will become the intermediate layer 100 is polished to make it thinner, and then etched (e.g., dry etching) to form the convex surface 100a (see FIG. 45B).

[0195] In the final step S64, a concave mirror material is deposited on the convex surface 100a of the substrate that will become the intermediate layer 100. Specifically, the material of the concave mirror 102 (e.g., a dielectric multilayer film) is deposited on the convex surface 100a of the substrate that will become the intermediate layer 100 by, for example, vacuum deposition, sputtering, or CVD. As a result, a concave mirror 102 having a shape that matches the convex surface 100a is formed (see FIG. 46). Note that heat generated during the formation of the concave mirror 102 is quickly released to the outside through the intermediate layer 100, so the temperature of the organic semiconductor layer 101 can be maintained at, for example, 100°C or below, and thermal degradation of the organic semiconductor layer 101 can be suppressed.

[0196] <Second Example of the Method for Manufacturing a Surface-Emitting Device> A second example of a method for manufacturing the surface light emitting device 10-13 will be described below with reference to the flowchart of FIG. 47 (steps S71 to S73) and the cross-sectional views of FIGS. 48A and 48B. Here, as an example, a plurality of surface light emitting devices 10-13 are simultaneously produced on a single wafer (e.g., a GaN substrate) that serves as the base material of the intermediate layer 100. Next, the series of the surface light emitting devices 10-13 are separated from one another to obtain chip-shaped surface light emitting devices (surface light emitting device chips). It is also possible to simultaneously produce a plurality of surface light emitting device arrays, in which a plurality of surface light emitting devices 10-13 are two-dimensionally arranged, on a single wafer (e.g., a GaN substrate) that serves as the base material of the intermediate layer 100, and then separate the series of the surface light emitting device arrays from one another to obtain a plurality of chip-shaped surface light emitting device arrays (surface light emitting device array chips).

[0197] In the first step S71, a reflector 103, a first transparent conductive film 104, an organic semiconductor layer 101, a second transparent conductive film 105, and an intermediate layer 100 are laminated in this order on the surface (upper surface) of a wafer that will become the substrate 112. Specifically, each layer is sequentially formed on the surface of a wafer (e.g., a GaN substrate) that will become the substrate 112 by, for example, vacuum deposition, sputtering, CVD (Chemical Vapor Deposition), or the like (see FIG. 48A).

[0198] In the next step S72, convex surface 100a is formed on intermediate layer 100 (see FIG. 48B). Specifically, the rear surface of intermediate layer 100 is polished to reduce its thickness, and then the rear surface is etched (e.g., dry etching) to form convex surface 100a (see FIG. 48B).

[0199] In the final step S73, a concave mirror material is deposited on the convex surface 100a of the intermediate layer 100. Specifically, the material of the concave mirror 102 (e.g., a dielectric multilayer film) is deposited on the convex surface 100a of the intermediate layer 100 by, for example, vacuum deposition, sputtering, or CVD. As a result, the concave mirror 102 is formed in a shape that matches the convex surface 100a (see FIG. 46). Note that heat generated during the formation of the concave mirror 102 is quickly released to the outside through the intermediate layer 100, so the temperature of the organic semiconductor layer 101 can be kept below 100°C, for example, and thermal degradation of the organic semiconductor layer 101 can be suppressed.

[0200] <Third Example of the Method for Manufacturing a Surface-Emitting Device> A third example of a method for manufacturing the surface light emitting element 10-13 will be described below with reference to the flowchart of FIG. 49 (steps S81 to S84) and the cross-sectional views of FIGS. 50A to 51. Here, as an example, a plurality of surface light emitting elements 10-13 are simultaneously produced on a single wafer (e.g., a GaN substrate) that serves as the base material of the intermediate layer 100. Next, the series of the surface light emitting elements 10-13 are separated from one another to obtain chip-shaped surface light emitting elements (surface light emitting element chips). It is also possible to simultaneously produce a plurality of surface light emitting element arrays, in which a plurality of surface light emitting elements 10-13 are two-dimensionally arranged, on a single wafer (e.g., a GaN substrate) that serves as the base material of the intermediate layer 100, and then separate the series of the surface light emitting element arrays from one another to obtain a plurality of chip-shaped surface light emitting element arrays (surface light emitting element array chips).

[0201] In the first step S81, a first laminate is generated by laminating a reflecting mirror 103, a first transparent conductive film 104, an organic semiconductor layer 101, and a second transparent conductive film 105 in this order on the surface (upper surface) of a first substrate (wafer) that will become the substrate 112. Specifically, each layer is sequentially formed on the surface of the first substrate that will become the substrate 112 by, for example, vacuum deposition, sputtering, CVD (Chemical Vapor Deposition), or the like (see FIG. 50A).

[0202] In the next step S82, convex surface 100a is formed on the second substrate that will become intermediate layer 100 (see FIG. 50B). Specifically, one surface of the second substrate is etched (for example, dry etching) to form convex surface 100a (see FIG. 50B).

[0203] In the next step S83, a concave mirror material is deposited on the convex surface 100a of the second substrate, which will become the intermediate layer 100, to generate a second laminate. Specifically, a material for the concave mirror 102 (e.g., a dielectric multilayer film) is deposited on the convex surface 100a of the second substrate, which will become the intermediate layer 100, by vacuum deposition, sputtering, CVD, or the like. As a result, a concave mirror 102 having a shape following the convex surface 100a is formed (see FIG. 50C).

[0204] In the final step S84, the second transparent conductive film 105 and the second substrate that will become the intermediate layer 100 are bonded together (see FIG. 51). Specifically, the second transparent conductive film 105 is attached to the second substrate that will become the intermediate layer 100.

[0205] According to the third example of the manufacturing method for the surface emitting device 10-13 described above, the first laminate including the organic semiconductor layer 101 and the second laminate including the concave mirror 102 are separately manufactured, and then the first and second laminates are bonded together, which is effective in preventing the heat generated during the formation of the concave mirror 102 from being transferred to the organic semiconductor layer 101.

[0206] The surface light emitting device 10-13 described above provides the same effects as the surface light emitting device 10-1 according to the first embodiment, and also has a simple configuration and can be manufactured by various methods.

[0207] <14. Surface-emitting device according to Example 14 of one embodiment of the present technology> Hereinafter, a surface light emitting device according to Example 14 of an embodiment of the present technology will be described with reference to the drawings. Fig. 52 is a cross-sectional view of a surface light emitting device 10-14 according to Example 14 of an embodiment of the present technology.

[0208] As shown in FIG. 52, the surface light emitting device 10-14 has the same configuration as the surface light emitting device 10-14 according to the thirteenth embodiment, except that it has a transistor 133 instead of the substrate 112.

[0209] The transistor 133 constitutes a part of the laser driver, and switches the current or voltage applied to the organic semiconductor layer 101. In addition to the transistor 133, the laser driver includes a power supply, a capacitor, and the like.

[0210] The circuit elements of the laser driver including the transistor 133 are fabricated on a semiconductor substrate using, for example, a photolithography method.

[0211] The surface light emitting device 10-14 can be manufactured by the same method as the surface light emitting device 10-13 of Example 13, except that the transistor 133 is formed.

[0212] In the surface light emitting device 10-14, the organic semiconductor layer 101 can be directly driven by the transistor 133, and therefore the response can be improved.

[0213] <15. Surface light emitting device according to Example 15 of one embodiment of the present technology> Hereinafter, a surface light emitting device according to Example 15 of an embodiment of the present technology will be described with reference to the drawings. Fig. 53 is a cross-sectional view of a surface light emitting device 10-15 according to Example 15 of an embodiment of the present technology.

[0214] The surface light emitting device 10-15 has a configuration similar to that of the surface light emitting device 13 of Example 13, except that the first and second transparent conductive films 104, 105 and the organic semiconductor layer 101 are disposed between the concave mirror 102 and the intermediate layer 100. In the surface light emitting device 10-15, the distance between the organic semiconductor layer 101 and the concave mirror 102 is narrower than the distance between the organic semiconductor layer 101 and the reflecting mirror 103.

[0215] The surface light emitting device 10-15 operates in a manner generally similar to that of the surface light emitting device 10-13 according to the thirteenth embodiment.

[0216] <<Method of manufacturing surface-emitting device>> A method for manufacturing the surface light emitting element 10-15 will be described below with reference to the flowchart in FIG. 54 (steps S91 to S93) and the cross-sectional views in FIGS. 55A to 56. Here, as an example, a plurality of surface light emitting elements 10-15 are simultaneously produced on a single wafer (e.g., a GaN substrate) that serves as the base material of the intermediate layer 100. Next, the series of the surface light emitting elements 10-15 are separated from one another to obtain chip-shaped surface light emitting elements (surface light emitting element chips). It is also possible to simultaneously produce a plurality of surface light emitting element arrays, in which a plurality of surface light emitting elements 10-15 are two-dimensionally arranged, on a single wafer (e.g., a GaN substrate) that serves as the base material of the intermediate layer 100, and then separate the series of the surface light emitting element arrays from one another to obtain a plurality of chip-shaped surface light emitting element arrays (surface light emitting element array chips).

[0217] In the first step S91, the reflecting mirror 103 and the intermediate layer 100 are laminated in this order on the wafer that will become the substrate 112. Specifically, the reflecting mirror 103 and the intermediate layer 100 are sequentially formed on the surface of the wafer that will become the substrate 112 by, for example, vacuum deposition, sputtering, CVD (Chemical Vapor Deposition), or the like (see FIG. 55A).

[0218] In the next step S92, convex surface 100a is formed on intermediate layer 100 (see FIG. 55B). Specifically, the rear surface of intermediate layer 100 is polished to make it thinner, and then the rear surface is etched (e.g., dry etching) to form convex surface 100a.

[0219] In the final step S93, the first transparent conductive film 104, the organic semiconductor layer 101, the second transparent conductive film 105, and the concave mirror material are deposited in this order on the convex surface 100a of the intermediate layer 100. Specifically, the first transparent conductive film 104, the organic semiconductor layer 101, the second transparent conductive film 105, and the material for the concave mirror 102 (e.g., a dielectric multilayer film) are deposited on the convex surface 100a of the intermediate layer 100 by, for example, vacuum deposition, sputtering, CVD, or the like. As a result, the first transparent conductive film 104, the organic semiconductor layer 101, the second transparent conductive film 105, and the concave mirror 102 are formed into a shape that follows the convex surface 100a (see FIG. 56).

[0220] According to the surface light emitting device 10-15, light reflected by the concave mirror 102 can be reliably incident on the organic semiconductor layer 101 regardless of the thickness of the intermediate layer 100 and the power of the concave mirror 102. In other words, there is a high degree of freedom in setting the thickness of the intermediate layer 100 and the power of the concave mirror 102.

[0221] <16. Surface-emitting device according to Example 16 of one embodiment of the present technology> Hereinafter, a surface light emitting device according to Example 16 of an embodiment of the present technology will be described with reference to the drawings. Fig. 57 is a cross-sectional view of a surface light emitting device 10-16 according to Example 16 of an embodiment of the present technology.

[0222] As shown in FIG. 57, the surface light emitting device 10-16 has a configuration generally similar to that of the surface light emitting device 10-15 according to Example 15, except that the surface light emitting device 10-16 does not have the second transparent conductive film 105.

[0223] In the surface light emitting device 10-16, for example, the concave mirror 102 is made of a metal or an alloy and functions as an anode electrode, and the first transparent conductive film 104 functions as a cathode electrode.

[0224] In the surface light emitting device 10-16, as an example, the reflecting mirror 103 is made of a dielectric or a semiconductor and is a reflecting mirror on the emission side.

[0225] In the surface light emitting device 10-16, the substrate 112 is transparent to the emission wavelength of the organic semiconductor layer 101. That is, the surface light emitting device 10-16 emits light to the rear surface side (lower surface side) of the substrate 112.

[0226] The surface light emitting device 10-16 can be manufactured by substantially the same method as that for the surface light emitting device 10-15 according to the fifteenth embodiment.

[0227] The surface light emitting device 10-16 exhibits substantially the same effects as the surface light emitting device 10-15 according to the fifteenth embodiment.

[0228] <17. Surface light emitting device according to Example 17 of one embodiment of the present technology> Hereinafter, a surface light emitting device according to Example 17 of an embodiment of the present technology will be described with reference to the drawings. Fig. 58 is a cross-sectional view of a surface light emitting device 10-17 according to Example 17 of an embodiment of the present technology.

[0229] As shown in FIG. 58, the surface light emitting device 10-17 has a configuration generally similar to that of the surface light emitting device 10-15 according to Example 15, except that it has an electrode member 120 instead of the first transparent conductive film 104.

[0230] In the surface-emitting device 10-17, the intermediate layer 100 protrudes on both sides in the in-plane direction compared to the other layers, and a frame-shaped (e.g., annular) electrode member 120 is provided on the protruding portion. The intermediate layer 100 is made of a conductive material. In the surface-emitting device 10-17, a current path for a current injected into the organic semiconductor layer 101 exists within the intermediate layer 100.

[0231] The surface light emitting device 10-17 operates in a manner generally similar to that of the surface light emitting device 10-15 according to the fifteenth embodiment.

[0232] <<Method of manufacturing surface-emitting device>> A method for manufacturing the surface light emitting device 10-17 will be described below with reference to the flowchart in FIG. 59 (steps S101 to S104) and the cross-sectional views in FIGS. 60A to 61B. Here, as an example, a plurality of surface light emitting devices 10-17 are simultaneously produced on a single wafer (e.g., a GaN substrate) that serves as the base material of the intermediate layer 100. Next, the series of the surface light emitting devices 10-17 are separated from one another to obtain chip-shaped surface light emitting devices (surface light emitting device chips). It is also possible to simultaneously produce a plurality of surface light emitting device arrays, in which a plurality of surface light emitting devices 10-17 are two-dimensionally arranged, on a single wafer (e.g., a GaN substrate) that serves as the base material of the intermediate layer 100, and then separate the series of the surface light emitting device arrays from one another to obtain a plurality of chip-shaped surface light emitting device arrays (surface light emitting device array chips).

[0233] In the first step S101, a convex surface 100a is formed on the surface of the substrate that will become the intermediate layer 100 (see FIG. 60A). Specifically, the surface of the intermediate layer 100 is polished to thin it, and then the surface is etched (e.g., dry etching) to form the convex surface 100a.

[0234] In the next step S102, the organic semiconductor layer 101, the second transparent conductive film 105 (transparent conductive film), and the concave mirror material are laminated in this order on the convex surface 100a of the substrate that will become the intermediate layer 100 (see FIG. 60B). Specifically, the organic semiconductor layer 101, the second transparent conductive film 105, and the material for the concave mirror 102 (e.g., a dielectric multilayer film, a semiconductor multilayer film, etc.) are sequentially deposited on the convex surface 100a of the substrate that will become the intermediate layer 100 by, for example, vacuum deposition, sputtering, CVD (Chemical Vapor Deposition), etc. (see FIG. 60B). As a result, the organic semiconductor layer 101, the second transparent conductive film 105, and the concave mirror 102 are formed into shapes that follow the convex surface 100a.

[0235] In the next step S103, an electrode member 120 is formed on the surface of the substrate that will become the intermediate layer 100 (see FIG. 61A). Specifically, for example, using a lift-off method, the material of the electrode member 120 is formed on the surface of the intermediate layer 100 so as to surround the organic semiconductor layer 101.

[0236] In the final step S104, a reflecting mirror 103 is formed on the rear surface of the substrate that will become the intermediate layer 100 (see FIG. 61B). Specifically, a material for the reflecting mirror 103 (e.g., a dielectric multilayer film, a semiconductor multilayer film, etc.) is formed on the rear surface of the intermediate layer 100 by, for example, vacuum deposition, sputtering, CVD, etc.

[0237] The surface light emitting device 10-17 exhibits substantially the same effects as the surface light emitting device 10-15 according to the fifteenth embodiment.

[0238] <18. Surface light emitting device according to Example 18 of one embodiment of the present technology> Hereinafter, a surface light emitting device according to Example 18 of an embodiment of the present technology will be described with reference to the drawings. Fig. 62 is a cross-sectional view of a surface light emitting device 10-18 according to Example 18 of an embodiment of the present technology.

[0239] As shown in Figure 62, the surface-emitting element 10-18 has a configuration generally similar to that of the surface-emitting element 10-3 of Example 3 and the surface-emitting element 10-5 of Example 5, except that multiple organic semiconductor layers 101 (e.g., first to third organic semiconductor layers 101A, 101B, 101C) are stacked in the vertical direction.

[0240] Incidentally, the position of the antinode of the standing wave in the resonator varies depending on the wavelength of the light emitted from the organic semiconductor layer (the emission wavelength of the organic semiconductor layer).

[0241] Therefore, in the surface light emitting device 10-18, the positions of the organic semiconductor layers 101 in the stacking direction are set so that the positions of the organic semiconductor layers 101 in the stacking direction approximately coincide with the positions of the antinodes of the standing waves of the light emitted from the organic semiconductor layers 101. This makes it possible to improve the light amplification effect of each organic semiconductor layer 101 (obtain high gain).

[0242] Specifically, as an example, of the first to third organic semiconductor layers 101A, 101B, and 101C, the first organic semiconductor layer 101A that emits red light is disposed in a position closest to the reflecting mirror 103, and the third organic semiconductor layer 101C that emits blue light is disposed in a position farthest from the reflecting mirror 103. Note that the first to third organic semiconductor layers 101A, 101B, and 101C may be disposed upside down depending on the positions of the antinodes of the standing waves of the respective colored lights.

[0243] The surface light emitting device 10-18 can be manufactured by substantially the same method as the surface light emitting device 10-1 of the first embodiment.

[0244] According to the surface light emitting device 10-18, a high gain can be obtained in each organic semiconductor layer 101, so that the threshold current can be reduced, and thus a highly efficient surface light emitting device can be realized.

[0245] <19. Surface-emitting device according to Example 19 of one embodiment of the present technology> Hereinafter, a surface light emitting device according to Example 19 of an embodiment of the present technology will be described with reference to the drawings. Fig. 63 is a cross-sectional view of a surface light emitting device 10-19 according to Example 19 of an embodiment of the present technology.

[0246] As shown in Figure 63, the surface-emitting element 10-19 has a plurality of light-emitting element sections 50 (e.g., a plurality of light-emitting element sections 50 including first to third light-emitting element sections 50A, 50B, and 50C) arranged in an array (e.g., a two-dimensional arrangement), and as a whole forms a surface-emitting laser array.

[0247] The organic semiconductor layers 101 of at least two of the light-emitting element units 50 may have different emission wavelengths. As an example, the first light-emitting element unit 50A has a first organic semiconductor layer 101A that emits red light, the second light-emitting element unit 50B has a second organic semiconductor layer 101B that emits green light, and the third light-emitting element unit 50C has a third organic semiconductor layer 101C that emits blue light. That is, the emission wavelengths of the organic semiconductor layers 101 of the first to third light-emitting element units 50A, 50B, and 50C are different from one another.

[0248] The organic semiconductor layers 101 of at least two light-emitting element components 50 may be positioned differently in the stacking direction. As an example, the first to third organic semiconductor layers 101A, 101B, and 101C are positioned differently in the stacking direction (vertical direction). More specifically, the first organic semiconductor layer 101A is disposed at the farthest position from the intermediate layer 100 in the stacking direction, and the third organic semiconductor layer 101C is disposed at the closest position from the intermediate layer 100. Each organic semiconductor layer 101 is disposed at the position of an antinode of the corresponding light standing wave. Note that the arrangement of the multiple organic semiconductor layers 101 may be reversed depending on the position of the antinode of the standing wave.

[0249] In the surface light emitting device 10-19, as an example, the plurality of light emitting element units 50 have separate reflectors 103 (anode electrodes), and the first transparent conductive film 104 serves as a cathode electrode common to the plurality of light emitting element units 50. Therefore, a voltage can be applied to the plurality of organic semiconductor layers 101 individually, and the plurality of light emitting element units 50 can be driven individually.

[0250] According to the surface light emitting device 10-19, it is possible to realize a surface emitting laser array in which each light emitting element section 50 can be driven individually and with high efficiency.

[0251] <20. Surface light emitting device according to Example 20 of one embodiment of the present technology> A surface light emitting device according to Example 20 of an embodiment of the present technology will be described below with reference to the drawings. Fig. 64A is a plan view of a surface light emitting device 10-20 according to Example 20 of an embodiment of the present technology. Fig. 64B is a cross-sectional view of the surface light emitting device 10-20 according to Example 20 of an embodiment of the present technology. Fig. 64B is a cross-sectional view taken along line PP of Fig. 64A.

[0252] The surface-emitting element 10-20 has a configuration generally similar to that of the surface-emitting element 10-3 of Example 3 and the surface-emitting element 10-6 of Example 6, except that multiple organic semiconductor layers 101 are arranged concentrically, as shown in Figures 64A and 64B.

[0253] The surface light emitting device 10-20 operates in the same manner as the surface light emitting device 10-6 according to the sixth embodiment, and can be manufactured by the same manufacturing method.

[0254] In the surface light emitting device 10-20, for example, the third organic semiconductor layer 101C is cylindrical, the second organic semiconductor layer 101B is concentrically annular and surrounds the third organic semiconductor layer 101C, and the first organic semiconductor layer 101A is concentrically annular and surrounds the second organic semiconductor layer 101B. The center of each organic semiconductor layer 101 is located on the optical axis of the concave mirror. By arranging the organic semiconductor layers 101 concentrically in this manner, the concave mirror 102 can accurately reflect light emitted from each organic semiconductor layer 101 and light passing through the organic semiconductor layer 101 toward the organic semiconductor layer 101, thereby achieving high gain in the organic semiconductor layer 101.

[0255] <21. Surface light emitting device according to Example 21 of one embodiment of the present technology> A surface light emitting device according to Example 21 of an embodiment of the present technology will be described below with reference to the drawings. Fig. 65A is a plan view of a surface light emitting device 10-21 according to Example 21 of an embodiment of the present technology. Fig. 65B is a cross-sectional view of the surface light emitting device 10-21 according to Example 21 of an embodiment of the present technology. Fig. 65B is a cross-sectional view taken along line PP of Fig. 65A.

[0256] As shown in FIGS. 65A and 65B, the surface light emitting device 10-21 has the same configuration as the surface light emitting device 10-5 according to Example 5, except that it has a plurality of (for example, two) organic semiconductor layers that emit light of the same color.

[0257] In the surface light emitting device 10-21, for example, two layers, a first organic semiconductor layer 101A, a second organic semiconductor layer 101B, and a third organic semiconductor layer 101C, are arranged side by side in the in-plane direction.

[0258] The surface light emitting device 10-21 operates in the same manner as the surface light emitting device 10-5 according to the fifth embodiment, and can be manufactured by the same manufacturing method.

[0259] The surface light emitting element 10-21 can emit light of a color obtained by mixing white light with one color (for example, red).

[0260] <22. Surface light emitting device according to Example 22 of one embodiment of the present technology> Hereinafter, a surface light emitting device according to Example 22 of an embodiment of the present technology will be described with reference to the drawings. Fig. 66 is a cross-sectional view of a surface light emitting device 10-22 according to Example 22 of an embodiment of the present technology.

[0261] 66, the surface light emitting device 10-22 has a configuration generally similar to that of the surface light emitting device 10-5 according to Example 5, except that in addition to the first reflecting mirror 103A, the second reflecting mirror 103B is also a flat mirror. The first reflecting mirror 103A is substantially the same as the reflecting mirror 103 (for example, a flat mirror).

[0262] Since the surface-emitting device 10-22 does not use a concave mirror, it is not possible to thicken the intermediate layer 100, i.e., to lengthen the resonator length, and the temperature rise during long-term continuous operation cannot be sufficiently suppressed, which raises concerns about reliability. However, it is believed to be practical depending on the application, such as short-term operation.

[0263] <<Method of manufacturing surface-emitting device>> A method for manufacturing the surface light emitting device 10-22 will be described below with reference to the flowchart in FIG. 67 (steps S111 to S116) and the cross-sectional views in FIGS. 68A to 69C. Here, as an example, a plurality of surface light emitting devices 10-22 are simultaneously produced on a single wafer (e.g., a GaN substrate) that serves as the base material of the intermediate layer 100. Next, the series of the surface light emitting devices 10-22 are separated from one another to obtain chip-shaped surface light emitting devices (surface light emitting device chips). It is also possible to simultaneously produce a plurality of surface light emitting device arrays, in which a plurality of surface light emitting devices 10-22 are two-dimensionally arranged, on a single wafer (e.g., a GaN substrate) that serves as the base material of the intermediate layer 100, and then separate the series of the surface light emitting device arrays from one another to obtain a plurality of chip-shaped surface light emitting device arrays (surface light emitting device array chips).

[0264] In the first step S111, a first transparent conductive film 104 is laminated on the surface (upper surface) of a substrate (wafer) that will become the intermediate layer 100. Specifically, the first transparent conductive film 104 is formed on the surface of a wafer (e.g., a GaN substrate) that will become the intermediate layer 100 by, for example, vacuum deposition, sputtering, CVD (Chemical Vapor Deposition), or the like (see FIG. 68A).

[0265] In the next step S112, a plurality of organic semiconductor layers 101 are formed on the first transparent conductive film 104. A plurality (for example, three) of organic semiconductor layers 101 (for example, first to third organic semiconductor layers 101A, 101B, and 101C) are formed on the first transparent conductive film 104 (see FIG. 68B). Specifically, a plurality of organic semiconductor layers 101 are formed on the first transparent conductive film 104 in the same manner as in step S24 of the flowchart in FIG. 19.

[0266] In the next step S113, a high-resistance layer 106 is formed around the plurality of organic semiconductor layers 101. Specifically, a high-resistance material that will become the high-resistance layer 106 is formed to cover the plurality of organic semiconductor layers 101 and the first transparent conductive film 104, and then only the portions of the material that cover the plurality of organic semiconductor layers 101 are removed by etching to expose the plurality of organic semiconductor layers 101 (see FIG. 68C).

[0267] In the next step S114, a second transparent conductive film 105 is formed on the plurality of organic semiconductor layers 101 and the high resistance layer 106. Specifically, the second transparent conductive film 105 is formed on the plurality of organic semiconductor layers 101 and the high resistance layer 106 by, for example, vacuum deposition, sputtering, or the like (see FIG. 69A).

[0268] In the next step S115, first reflecting mirror 103A is formed on second transparent conductive film 105. Specifically, the material of first reflecting mirror 103A is deposited on second transparent conductive film 105 by, for example, vacuum deposition, sputtering, CVD, or the like (see FIG. 69B).

[0269] In the final step S116, second reflecting mirror 103B is formed on the back surface (lower surface) of the substrate (wafer). Specifically, first, the back surface of the substrate that will become intermediate layer 100 is polished to thin it. Next, a material for second reflecting mirror 103B (e.g., a dielectric multilayer film or a semiconductor multilayer film) is formed on the back surface of the substrate by, for example, vacuum deposition, sputtering, CVD, or the like. As a result, second reflecting mirror 103B is formed (see FIG. 69C).

[0270] The surface light emitting device 10-22 can provide the same effects as the surface light emitting device 10-5 according to Example 5, and can also be made thinner, although the intermediate layer 100 cannot be made thick, resulting in poor heat dissipation.

[0271] <23. Surface-emitting device according to Example 23 of one embodiment of the present technology> Hereinafter, a surface light emitting device according to Example 23 of an embodiment of the present technology will be described with reference to the drawings. Fig. 70A is a plan view of a surface light emitting device 10-23 according to Example 23 of an embodiment of the present technology, and Fig. 70B is a cross-sectional view of the surface light emitting device 10-23 according to Example 23 of an embodiment of the present technology. Fig. 70B is a cross-sectional view taken along line PP in Fig. 70A.

[0272] The surface light emitting device 10-23 has a configuration generally similar to that of the surface light emitting device 10-5 according to Example 5, except that it has an active layer 113 made of an inorganic semiconductor between the plurality of organic semiconductor layers 101 and the concave mirror 102 (for example, in the intermediate layer 100), and the active layer 113 is excited by electric current to emit light, which excites (photoexcites) the plurality of organic semiconductor layers 101. Note that a configuration may also be adopted in which the active layer 113 is disposed between the plurality of organic semiconductor layers 101 and the reflecting mirror 103, and the active layer 113 is excited by electric current.

[0273] The active layer 113 is, for example, In 0.04 Ga 0.96 N layer (barrier layer) and In 0.16 Ga 0.84 It has a five-layered multiple quantum well structure in which an N layer (well layer) is stacked, and is designed to emit light at a wavelength of, for example, 405 nm.

[0274] In the surface light emitting device 10-23, the reflecting mirror 103 and the concave mirror 102 are each a multilayer reflecting mirror (for example, a dielectric multilayer reflecting mirror or a semiconductor multilayer reflecting mirror) having high reflectance for light with a wavelength of, for example, 405 nm.

[0275] The emission wavelength of the active layer 113 may be, for example, in the blue band, and each of the reflecting mirror 103 and the concave mirror 102 may be a multilayer reflecting mirror (for example, a dielectric multilayer reflecting mirror or a semiconductor multilayer reflecting mirror) having high reflectivity for light with wavelengths in the blue band.

[0276] <Operation of surface-emitting element> In the surface light emitting device 10-23, a current flowing in from the anode electrode (reflector 103) passes through the plurality of organic semiconductor layers 101, the first transparent conductive film 104, and the upper part of the intermediate layer 100, and is injected into the active layer 113. At this time, the active layer 113 emits light, and the light is irradiated onto the plurality of organic semiconductor layers 101, exciting each of the organic semiconductor layers 101. At this time, the organic semiconductor layer 101 emits light, and the light travels back and forth between the concave mirror 102 and the reflector 103 while being amplified by the organic semiconductor layer 101, and when the oscillation conditions are satisfied, it is emitted as laser light from the concave mirror 102. The current injected into the active layer 113 flows out from the cathode electrode (electrode member 108) through the lower part of the intermediate layer 100.

[0277] <<Method of manufacturing surface-emitting device>> A method for manufacturing the surface light emitting device 10-23 will be described below with reference to the flowchart in FIG. 71 (steps S121 to S129) and the cross-sectional views in FIGS. 72A to 76B. Here, as an example, a plurality of surface light emitting devices 10-23 are simultaneously produced on a single wafer (e.g., a GaN substrate) that serves as the base material of the intermediate layer 100. Next, the series of the surface light emitting devices 10-23 are separated from one another to obtain chip-shaped surface light emitting devices (surface light emitting device chips). It is also possible to simultaneously produce a plurality of surface light emitting device arrays, in which a plurality of surface light emitting devices 10-23 are two-dimensionally arranged, on a single wafer (e.g., a GaN substrate) that serves as the base material of the intermediate layer 100, and then separate the series of the surface light emitting device arrays from one another to obtain chip-shaped surface light emitting device arrays (surface light emitting device array chips).

[0278] In the first step S121, a step portion 100c is formed on the surface of the substrate that will become the intermediate layer 100 (see FIG. 72A). Specifically, a resist pattern is formed that covers the surface of the substrate that will become the intermediate layer 100 except for the portion where the step portion 100c will be formed, and then the intermediate layer 100 is etched using the resist pattern as a mask to form the step portion 100c.

[0279] In the next step S122, the active layer 113 is laminated on the upper part of the step portion 100c (see FIG. 72B). Specifically, the material of the active layer 113 is deposited on the upper part of the step portion 100c by, for example, vacuum deposition, sputtering, CVD, or the like.

[0280] In the next step S123, a substrate that will become intermediate layer 100 is regrown on active layer 113 (see FIG. 73A).

[0281] In the next step S124, the first transparent conductive film 104 is formed on the regrown substrate (see FIG. 73B). Specifically, the first transparent conductive film 104 is formed on the regrown substrate by, for example, vacuum deposition, sputtering, CVD (Chemical Vapor Deposition), or the like.

[0282] In the next step S125, a plurality of organic semiconductor layers 101 are formed on the first transparent conductive film 104 (see FIG. 74A). Specifically, a plurality of organic semiconductor layers 101 are formed on the first transparent conductive film 104 in the same manner as in step S24 of the flowchart in FIG.

[0283] In the next step S126, a high-resistance layer 106 is formed around the plurality of organic semiconductor layers 101 (see FIG. 74B). Specifically, a high-resistance material that will become the high-resistance layer 106 is formed to cover the plurality of organic semiconductor layers 101 and the first transparent conductive film 104, and then only the portion of the material that covers the organic semiconductors 101 is removed by etching using a mask to expose the organic semiconductor layer 101.

[0284] In the next step S127, a reflecting mirror 103 is formed on the plurality of organic semiconductor layers 101 (see FIG. 75A). Specifically, a film of the material of the reflecting mirror 103 is formed on the plurality of organic semiconductor layers 101 and the high resistance layer 106 by, for example, vacuum deposition, sputtering, CVD, or the like (see FIG. 75A).

[0285] In the next step S128, the electrode member 108 is formed on the lower part of the step portion 100c (see FIG. 75B). Specifically, the electrode member 108 is formed on the lower part of the step portion 100c by using, for example, a lift-off method.

[0286] In the final step S129, a concave mirror 102 is formed on the back surface (lower surface) of the substrate (wafer). Specifically, first, the back surface of the substrate that will become the intermediate layer 100 is polished to thin it, and then the back surface is etched (e.g., dry etching) to form a convex surface 100a (see FIG. 76A). Next, a material for the concave mirror 102 (e.g., a dielectric multilayer film) is formed on the convex surface 100a by, for example, vacuum deposition, sputtering, or CVD. As a result, a concave mirror 102 having a shape that matches the convex surface 100a is formed (see FIG. 76B). Note that heat generated during the formation of the concave mirror 102 is quickly dissipated to the outside through the intermediate layer 100, so that the temperature of each organic semiconductor layer 101 can be maintained at, for example, 100°C or below, and thermal degradation of each organic semiconductor layer 101 can be suppressed.

[0287] The surface-emitting device 10-23 has the same effect as the surface-emitting device 10-5 of Example 5, and since each organic semiconductor layer 101 is excited by light to emit light, no electrode (e.g., the second transparent conductive film 105) is required to apply voltage to the organic semiconductor layer 101, thereby preventing heat damage to each organic semiconductor layer 101 during manufacturing.

[0288] <24. Surface-emitting device according to Example 24 of one embodiment of the present technology> A surface light emitting device according to Example 24 of an embodiment of the present technology will be described below with reference to the drawings. Fig. 77A is a plan view of a surface light emitting device 10-24 according to Example 24 of an embodiment of the present technology, and Fig. 77B is a cross-sectional view of the surface light emitting device 10-24 according to Example 24 of an embodiment of the present technology. Fig. 77B is a cross-sectional view taken along line PP in Fig. 77A.

[0289] The surface light emitting device 10-24 has the same configuration as the surface light emitting device 10-23 of Example 23, except that a plurality of organic semiconductor layers 101 (for example, first to third organic semiconductor layers 101A, 101B, and 101C) are stacked in the vertical direction.

[0290] In the surface light emitting device 10-24, a first organic semiconductor layer 101A that emits red light, a second organic semiconductor layer 101B that emits green light, and a third organic semiconductor layer 101C that emits blue light are arranged in this order from the reflecting mirror 103 side (upper side). This allows each organic semiconductor layer 101 to be arranged so as to approximately coincide with the position of an antinode of the corresponding light standing wave, thereby enhancing the light amplification effect. Note that the arrangement of the multiple organic semiconductor layers 101 may be reversed depending on the position of the antinode of the standing wave.

[0291] The surface light emitting device 10-24 operates in the same manner as the surface light emitting device 10-23 according to Example 23, and can be manufactured by roughly the same manufacturing method.

[0292] The surface light emitting device 10-24 has the same effect as the surface light emitting device 10-23, and can also realize a highly efficient surface light emitting device.

[0293] <25. Surface light emitting device according to Example 25 of one embodiment of the present technology> Hereinafter, a surface light emitting device according to Example 25 of an embodiment of the present technology will be described with reference to the drawings. Fig. 78A is a plan view of a surface light emitting device 10-25 according to Example 25 of an embodiment of the present technology, and Fig. 78B is a cross-sectional view of the surface light emitting device 10-25 according to Example 25 of an embodiment of the present technology. Fig. 78B is a cross-sectional view taken along line PP of Fig. 78A.

[0294] The surface-emitting device 10-25 has a configuration similar to that of the surface-emitting device 10-23 of Example 23, except that the multiple organic semiconductor layers 101 are two organic semiconductor layers 101 (e.g., first and second organic semiconductor layers 101A and 101B), i.e., it does not have a third organic semiconductor layer 101C.

[0295] The surface light emitting device 10-25 operates in the same manner as the surface light emitting device 10-23 according to Example 23, and can be manufactured by roughly the same manufacturing method.

[0296] The surface light emitting element 10-25 can emit a composite light of two colors of light (for example, red light and green light).

[0297] <26. Surface-emitting device according to Example 26 of one embodiment of the present technology> Hereinafter, a surface light emitting device according to Example 26 of an embodiment of the present technology will be described with reference to the drawings. Fig. 79A is a plan view of a surface light emitting device 10-26 according to Example 26 of an embodiment of the present technology, and Fig. 79B is a cross-sectional view of the surface light emitting device 10-26 according to Example 26 of an embodiment of the present technology. Fig. 79B is a cross-sectional view taken along line PP of Fig. 79A.

[0298] The surface-emitting device 10-26 has a configuration similar to that of the surface-emitting device 10-24 of Example 24, except that the multiple organic semiconductor layers 101 are two stacked organic semiconductor layers 101 (e.g., first and second organic semiconductor layers 101A and 101B), i.e., the surface-emitting device 10-26 does not have a third organic semiconductor layer 101C.

[0299] In the surface light emitting device 10-26, the portion where the third organic semiconductor layer 101C is provided in the surface light emitting device 10-24 according to Example 24 is, for example, a part (regrowth portion) of the intermediate layer 100. In this case, for example, if the first transparent conductive film 104 is not provided, the number of times the intermediate layer 100 is regrown can be set to one.

[0300] The surface light emitting device 10-26 operates in the same manner as the surface light emitting device 10-24 according to Example 24, and can be manufactured by roughly the same manufacturing method.

[0301] The surface light emitting element 10-26 can emit a composite light of two colors of light (for example, red light and green light) with high efficiency.

[0302] <27. Surface-emitting device according to Example 27 of one embodiment of the present technology> Hereinafter, a surface light emitting device according to Example 27 of an embodiment of the present technology will be described with reference to the drawings. Fig. 80A is a plan view of a surface light emitting device 10-27 according to Example 27 of an embodiment of the present technology, and Fig. 80B is a cross-sectional view of the surface light emitting device 10-27 according to Example 27 of an embodiment of the present technology. Fig. 80B is a cross-sectional view taken along line PP in Fig. 80A.

[0303] The surface light emitting device 10-27 has the same configuration as the surface light emitting device 10-23 according to Example 23, except that it has a second transparent conductive film 105.

[0304] The surface light emitting device 10-27 operates in the same manner as the surface light emitting device 10-23 according to Example 23, and can be manufactured by roughly the same manufacturing method.

[0305] <Effects of surface-emitting elements> The surface-emitting device 10-27 has the same effects as the surface-emitting device 10-23 of Example 23, and can also increase the injection efficiency of carriers (e.g., holes) into multiple organic semiconductor layers 101, thereby increasing the luminous intensity of each organic semiconductor layer 101.

[0306] <28. Surface light emitting device according to Example 28 of one embodiment of the present technology> Hereinafter, a surface light emitting device according to Example 28 of an embodiment of the present technology will be described with reference to the drawings. Fig. 81 is a plan view of a surface light emitting device 10-28 according to Example 28 of an embodiment of the present technology, and Fig. 81B is a cross-sectional view of the surface light emitting device 10-28 according to Example 28 of an embodiment of the present technology. Fig. 81B is a cross-sectional view taken along line PP in Fig. 81A.

[0307] As shown in Figures 81A and 81B, the surface-emitting device 10-28 has a configuration similar to that of the surface-emitting device 10-27 of Example 27, except that it has a configuration that allows voltage to be applied individually to multiple organic semiconductor layers 101 (e.g., first to third organic semiconductor layers 101A, 101B, 101C).

[0308] The surface-emitting element 10-28 has first to third reflecting mirrors 103A, 103B, and 103C corresponding to the first to third organic semiconductor layers 101A, 101B, and 101C, and three second transparent conductive films 105A, 105B, and 105C corresponding to the first to third organic semiconductor layers 101A, 101B, and 101C.

[0309] The surface light emitting device 10-28 operates in the same manner as the surface light emitting device 10-27 according to Example 27, and can be manufactured by roughly the same manufacturing method.

[0310] The surface light emitting device 10-28 has the same effects as the surface light emitting device 10-27 according to Example 27, and can emit light of a desired color (for example, any one of red light, green light, and blue light, or composite light of at least two of these lights) because voltages can be applied individually to the plurality of organic semiconductor layers 101. Furthermore, the surface light emitting device 10-8 can also adjust the color of the emitted light, which is composite light, by applying different drive voltages to the plurality of organic semiconductor layers 101.

[0311] <29. Surface-emitting device according to Example 29 of one embodiment of the present technology> Hereinafter, a surface light emitting device according to Example 29 of an embodiment of the present technology will be described with reference to the drawings. Fig. 82 is a cross-sectional view of a surface light emitting device 10-29 according to Example 29 of an embodiment of the present technology.

[0312] As shown in Figure 82, the surface-emitting device 10-29 has a configuration generally similar to that of the surface-emitting device 10-3 of Example 3, except that the organic semiconductor layer 101 is arranged between the intermediate layer 100 and the concave mirror 102 and that it does not have a high-resistance layer 106.

[0313] In the surface light emitting device 10-29, the distance between the organic semiconductor layer 101 and the concave mirror 102 is narrower than the distance between the organic semiconductor layer 101 and the reflecting mirror 103.

[0314] In the surface light emitting device 10-29, as an example, a multilayer film reflector (dielectric multilayer film reflector or semiconductor multilayer film reflector) is provided as the reflector 103 on the upper part of a step portion provided in the intermediate layer 100, and a transparent electrode member 114 serving as an anode electrode is provided on the side of the reflector 103. An electrode member 108 serving as a cathode electrode is provided on the lower part of the step portion of the intermediate layer 100. The transparent electrode member 114 is made of a transparent conductive film.

[0315] The multilayer film reflecting mirror serving as reflecting mirror 103 is designed to have a reflectance slightly lower than that of concave mirror 102, and serves as the reflecting mirror on the emission side. The reflectance of reflecting mirror 103 may be made slightly higher than that of concave mirror 102, and concave mirror 102 may serve as the reflecting mirror on the emission side.

[0316] <Operation of surface-emitting element> In the surface light emitting device 10-29, a current flowing in from a transparent electrode member 114 serving as an anode electrode is injected into the organic semiconductor layer 101 via the intermediate layer 100. At this time, the organic semiconductor layer 101 emits light, and the light travels back and forth between the concave mirror 102 and the reflecting mirror 103 while being amplified by the organic semiconductor layer 101, and when the oscillation conditions are satisfied, it is emitted as laser light from the reflecting mirror 103. The current injected into the organic semiconductor layer 101 flows out from the electrode member 108 serving as a cathode electrode via the intermediate layer 100.

[0317] <<Method of manufacturing surface-emitting device>> A method for manufacturing the surface light emitting device 10-29 will be described below with reference to the flowchart in FIG. 83 (steps S131 to S135) and the cross-sectional views in FIGS. 84A to 86B. Here, as an example, a plurality of surface light emitting devices 10-29 are simultaneously produced on a single wafer (e.g., a GaN substrate) that serves as the base material of the intermediate layer 100. Next, the series of the surface light emitting devices 10-29 are separated from one another to obtain chip-shaped surface light emitting devices (surface light emitting device chips). It is also possible to simultaneously produce a plurality of surface light emitting device arrays, in which a plurality of surface light emitting devices 10-29 are two-dimensionally arranged, on a single wafer (e.g., a GaN substrate) that serves as the base material of the intermediate layer 100, and then separate the series of the surface light emitting device arrays from one another to obtain chip-shaped surface light emitting device arrays (surface light emitting device array chips).

[0318] In the first step S131, a step portion 100c is formed on the surface of the substrate that will become the intermediate layer 100 (see FIG. 84A). Specifically, a resist pattern is formed that covers the surface of the substrate that will become the intermediate layer 100 except for the portion where the step portion 100c will be formed, and then the intermediate layer 100 is etched using the resist pattern as a mask to form the step portion 100c.

[0319] In the next step S132, the reflecting mirror 103 is formed on the upper part of the step portion 100c (see FIG. 84B). Specifically, a material (dielectric or semiconductor) of the reflecting mirror 103 is deposited on the upper part of the step portion 100c by, for example, vacuum deposition, sputtering, CVD, or the like.

[0320] In the next step S133, transparent electrode members 114 are formed on the upper step of step portion 100c (see FIG. 85A). Specifically, transparent electrode members 114 are patterned on the side surfaces of reflecting mirror 103 using, for example, photolithography.

[0321] In the next step S134, the electrode member 108 is formed on the lower part of the step portion 100c by using, for example, a lift-off method (see FIG. 85B).

[0322] In the next step S135, a convex surface 100a is formed on the back surface of the substrate that will become the intermediate layer 100. Specifically, first, the back surface of the substrate that will become the intermediate layer 100 is polished to thin it, and then the back surface is etched (e.g., dry etched) to form the convex surface 100a (see FIG. 86A).

[0323] In the final step S136, an organic semiconductor layer 101 and a concave mirror material are deposited in this order on the convex surface 100a of the substrate, which will become the intermediate layer 100. Specifically, the organic semiconductor layer 101 is deposited on the convex surface 100a by, for example, vacuum deposition, coating, or the like. Next, a material for the concave mirror 102 (e.g., a dielectric multilayer film) is deposited on the organic semiconductor layer 101 by, for example, vacuum deposition, sputtering, CVD, or the like. As a result, the organic semiconductor layer 101 and the concave mirror 102 are formed in shapes that conform to the convex surface 100a (see FIG. 86B).

[0324] <Effects of surface-emitting elements> In the surface-emitting device 10-29, the organic semiconductor layer 101 is disposed between the intermediate layer 100 and the concave mirror 102, so that light reflected by the concave mirror 102 can be reliably incident on the organic semiconductor layer 101 regardless of the thickness of the intermediate layer 100 or the power of the concave mirror 102. In this case, there is a high degree of freedom in selecting the thickness of the intermediate layer 100 and the power of the concave mirror 102. Furthermore, in the surface-emitting device 10-29, the current density of the current injected into the organic semiconductor layer 101 is not high, so high output cannot be expected, but damage to the organic semiconductor layer 101 due to heat during operation is small, and a long life can be expected.

[0325] <30. Surface-emitting device according to Example 30 of one embodiment of the present technology> A surface light emitting device according to Example 30 of an embodiment of the present technology will be described below with reference to the drawings. Fig. 87A is a cross-sectional view of a surface light emitting device 10-30 according to Example 30 of an embodiment of the present technology. Fig. 87B is a plan view of a surface light emitting device 10-30 according to Example 30 of an embodiment of the present technology. Fig. 87A is a cross-sectional view taken along line QQ of Fig. 87B.

[0326] As shown in Figures 87A and 87B, the surface-emitting element 10-30 has a plurality of light-emitting element sections 50 (e.g., a plurality of light-emitting element sections 50 including first to third light-emitting element sections 50A, 50B, and 50C) arranged in an array (e.g., a two-dimensional arrangement), and as a whole forms a surface-emitting laser array.

[0327] The organic semiconductor layers 101 of at least two of the light-emitting element units 50 may have different emission wavelengths. As an example, the first light-emitting element unit 50A has a first organic semiconductor layer 101A that emits red light, the second light-emitting element unit 50B has a second organic semiconductor layer 101B that emits green light, and the third light-emitting element unit 50C has a third organic semiconductor layer 101C that emits blue light. That is, the emission wavelengths of the organic semiconductor layers 101 of the first to third light-emitting element units 50A, 50B, and 50C are different.

[0328] In the surface light emitting device 10-30, as an example, the plurality of light emitting element units 50 have separate reflectors 103 that serve as anode electrodes, and the first transparent conductive film 104 serves as a cathode electrode common to the plurality of light emitting element units 50. Therefore, voltages can be applied to the plurality of organic semiconductor layers 101 individually, and the plurality of light emitting element units 50 can be driven individually.

[0329] In the surface light emitting element 10-30, as an example, when multiple light emitting element units 50 are arranged in a staggered pattern as shown in Figure 87B, by arranging three light emitting element units 50 emitting light of three colors in order at a pitch of, for example, 5 μm, the pitch of light emitting element units 50 emitting the same color can be, for example, 10 μm.

[0330] The surface light emitting device 10-30 can be manufactured by the same manufacturing method as that for the surface light emitting device 10-1 according to the first embodiment.

[0331] <Effects of surface-emitting elements> According to the surface-emitting element 10-30, multiple light-emitting element sections 50 emitting light of different colors share the same substrate as the intermediate layer 100, thereby realizing a monolithically configured surface-emitting laser array capable of emitting laser light of different colors (e.g., R, G, B) or composite light of at least two colors.

[0332] <31. Modifications of this technology> The present technology is not limited to the above-described embodiments, and various modifications are possible.

[0333] The number, shape, arrangement and emission wavelength of the organic semiconductor layers can be changed as appropriate. For example, the surface-emitting device according to the present technology may include a plurality of organic semiconductor layers with different emission wavelengths, a plurality of organic semiconductor layers with different volumes, a plurality of organic semiconductor layers arranged in the in-plane direction, or a plurality of organic semiconductor layers arranged in the stacking direction. Furthermore, the organic semiconductor layer may include a plurality of layers with different emission wavelengths, a plurality of layers with different volumes, a plurality of layers arranged in the in-plane direction, or a plurality of layers arranged in the stacking direction. When the organic semiconductor layer has a plurality of layers as described above, at least two of the plurality of layers may be provided in the same element section or in different element sections.

[0334] For example, each of Figures 88A to 88H shows an example of a planar configuration of multiple organic semiconductor layers. In each of Figures 88A to 88H, the line inside the largest shape (rectangle) indicates the boundary between adjacent organic semiconductor layers.

[0335] For example, each of Figures 89A to 89I shows an example of a planar configuration of multiple organic semiconductor layers. In each of Figures 89A to 89I, the line inside the largest shape (circle or regular hexagon) indicates the boundary between adjacent organic semiconductor layers.

[0336] For example, each of Figures 90A to 90H shows an example of a cross-sectional configuration of multiple organic semiconductor layers. In each of Figures 90A to 90H, the line inside the largest shape (rectangle) indicates the boundary between adjacent organic semiconductor layers.

[0337] The surface-emitting device according to the present technology can be applied not only to surface-emitting lasers but also to LEDs (light-emitting diodes). For example, a surface-emitting device 20 according to a modified example shown in FIG. 91 has a configuration generally similar to the surface-emitting device 10-1 according to Example 1, except that it does not include the reflecting mirror 103 and the high-resistance layer 106 and includes a metal or alloy electrode member 115 instead of the second transparent conductive film 105. The surface-emitting device 20 functions as an LED or a superluminescent diode (SLD). In the surface-emitting device 20, when a current is injected into the organic semiconductor layer 101 via the electrode member 115 serving as an anode electrode, light is emitted from the organic semiconductor layer 101 toward the intermediate layer 100. This light is emitted to the outside from the surface (upper surface) of the intermediate layer 100 as light (e.g., weakly diffused light, parallel light, or focused light) whose spread is suppressed by the concave mirror 102. The surface-emitting device 20 also achieves a sufficient heat dissipation effect due to the intermediate layer 100. Furthermore, in this structure in which the organic semiconductor layer 101 and the concave mirror 102 are coupled, it is possible to enhance light emission by the Purcell effect, control the polarization direction, and control the radiation angle of the emitted beam. In particular, polarization control becomes possible when a diffraction grating is used for the concave mirror.

[0338] In the surface-emitting devices according to the above-described embodiments and modifications, the concave mirror 102 and the organic semiconductor layer 101 are integrally formed, but they may also be formed separately. That is, the concave mirror 102 may be an external reflecting mirror. For example, the concave mirror 102 and the intermediate layer 100 may be integrally formed, and the organic semiconductor layer 101 may be provided on a substrate different from that on which the intermediate layer 100 is formed.

[0339] Parts of the configurations of the surface light emitting devices of the above-described embodiments and modifications may be combined within a range that does not contradict each other.

[0340] In each of the embodiments and variants described above, the material, thickness, width, length, shape, size, arrangement, etc. of each component that makes up the surface light emitting device can be changed as appropriate within the range that it functions as a surface light emitting device.

[0341] <32. Application examples to electronic devices> The technology according to the present disclosure (the present technology) can be applied to various products (electronic devices). For example, the technology according to the present disclosure may be realized as a device (e.g., a distance measuring device, a shape recognition device, etc.) mounted on any type of moving body such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, personal mobility, an airplane, a drone, a ship, or a robot.

[0342] The surface-emitting element according to the present technology and the light source device equipped with the surface-emitting element can be applied, for example, as a light source or a display itself of an apparatus that forms or displays an image using laser light (e.g., a laser printer, a laser copier, a projector, a head-mounted display, a head-up display, etc.).

[0343] <33. Example of application of a light source device having a surface light emitting element to a distance measuring device> Hereinafter, application examples of the surface light emitting devices according to the above-described embodiments and modifications will be described.

[0344] 92 shows an example of a schematic configuration of a distance measurement device 1000 (distance measuring device) including a light source device 190 having a surface light emitting element 10-1, as an example of an electronic device according to the present technology. The distance measurement device 1000 measures the distance to a subject S by a TOF (Time Of Flight) method. The distance measurement device 1000 includes the light source device 190 as a light source. The distance measurement device 1000 includes, for example, the light source device 190, a light receiving device 125, lenses 117 and 130, a signal processing unit 140, a control unit 150, a display unit 160, and a storage unit 170.

[0345] The light source device 190 includes, in addition to the surface light emitting element 10-1, a laser driver (driver) that drives the light emitting element unit 50 of the surface light emitting element 10-1. The laser driver has an anode terminal and a cathode terminal that are connected to the anode electrode and the cathode electrode of the surface light emitting element 10-1 via wiring, respectively. The laser driver is configured to include circuit elements such as a capacitor and a transistor.

[0346] The light receiving device 125 detects the light reflected by the subject S. The lens 117 is a collimating lens that converts the light emitted from the surface light emitting device 10-1 into parallel light. The lens 130 is a condensing lens that collects the light reflected by the subject S and guides it to the light receiving device 125.

[0347] The signal processing unit 140 is a circuit for generating a signal corresponding to the difference between the signal input from the light receiving device 125 and the reference signal input from the control unit 150. The control unit 150 is configured to include, for example, a time-to-digital converter (TDC). The reference signal may be a signal input from the control unit 150, or may be an output signal from a detection unit that directly detects the output of the surface light emitting element 10-1. The control unit 150 is, for example, a processor that controls the light source device 190, the light receiving device 125, the signal processing unit 140, the display unit 160, and the storage unit 170. The control unit 150 is a circuit that measures the distance to the subject S based on the signal generated by the signal processing unit 140. The control unit 150 generates a video signal for displaying information about the distance to the subject S and outputs it to the display unit 160. The display unit 160 displays the information about the distance to the subject S based on the video signal input from the control unit 150. The control unit 150 stores the information about the distance to the subject S in the storage unit 170.

[0348] In this application example, instead of the surface light emitting element 10-1, any of the surface light emitting elements 10-2 to 10-30, 20 can also be applied to the distance measurement device 1000. When a surface light emitting element having a plurality of light emitting element units 50 is applied to the distance measurement device 1000, a driver capable of individually driving the plurality of light emitting element units 50 can also be used.

[0349] <34. Example of distance measurement device mounted on a moving object> FIG. 93 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a mobile object control system to which the technology of the present disclosure can be applied.

[0350] The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. In the example shown in Fig. 93, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside-vehicle information detection unit 12030, an inside-vehicle information detection unit 12040, and an integrated control unit 12050. Also shown as functional components of the integrated control unit 12050 are a microcomputer 12051, an audio / video output unit 12052, and an in-vehicle network I / F (interface) 12053.

[0351] The drivetrain control unit 12010 controls the operation of devices related to the drivetrain of the vehicle in accordance with various programs. For example, the drivetrain control unit 12010 functions as a control device for a drive force generating device for generating a drive force of the vehicle, such as an internal combustion engine or a drive motor, a drive force transmission mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, a braking device for generating a braking force of the vehicle, etc.

[0352] The body system control unit 12020 controls the operation of various devices equipped in the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window device, or various lamps such as headlamps, backup lamps, brake lamps, turn signals, and fog lamps. In this case, radio waves transmitted from a portable device that serves as a key or signals from various switches may be input to the body system control unit 12020. The body system control unit 12020 receives these radio waves or signals and controls the vehicle's door lock device, power window device, lamps, etc.

[0353] The outside-vehicle information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000. For example, a distance measurement device 12031 is connected to the outside-vehicle information detection unit 12030. The distance measurement device 12031 includes the above-described distance measurement device 1000. The outside-vehicle information detection unit 12030 causes the distance measurement device 12031 to measure the distance to an object outside the vehicle (subject S), and acquires the distance data obtained thereby. The outside-vehicle information detection unit 12030 may perform object detection processing for people, cars, obstacles, signs, etc. based on the acquired distance data.

[0354] The in-vehicle information detection unit 12040 detects information inside the vehicle. For example, a driver state detection unit 12041 that detects the state of the driver is connected to the in-vehicle information detection unit 12040. The driver state detection unit 12041 includes, for example, a camera that captures an image of the driver, and the in-vehicle information detection unit 12040 may calculate the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041, or may determine whether the driver is dozing off.

[0355] The microcomputer 12051 can calculate control target values ​​for the driving force generating device, steering mechanism, or braking device based on the information inside and outside the vehicle acquired by the outside-vehicle information detection unit 12030 or the inside-vehicle information detection unit 12040, and output control commands to the drivetrain control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing the functions of an ADAS (Advanced Driver Assistance System), including vehicle collision avoidance or impact mitigation, following driving based on the distance between vehicles, maintaining vehicle speed, vehicle collision warning, vehicle lane departure warning, etc.

[0356] In addition, the microcomputer 12051 can perform cooperative control for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on driver operation, by controlling the driving force generating device, steering mechanism, braking device, etc. based on information about the surroundings of the vehicle obtained by the outside vehicle information detection unit 12030 or the inside vehicle information detection unit 12040.

[0357] Furthermore, the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information about the outside of the vehicle acquired by the outside information detection unit 12030. For example, the microcomputer 12051 can control the headlamps according to the position of a preceding vehicle or an oncoming vehicle detected by the outside information detection unit 12030, and perform cooperative control for the purpose of preventing glare, such as switching from high beams to low beams.

[0358] The audio / video output unit 12052 transmits at least one of audio and video output signals to an output device capable of visually or audibly notifying information to passengers in the vehicle or to the outside of the vehicle. In the example of Fig. 93, an audio speaker 12061, a display unit 12062, and an instrument panel 12063 are exemplified as output devices. The display unit 12062 may include, for example, at least one of an on-board display and a head-up display.

[0359] FIG. 94 is a diagram showing an example of the installation position of the distance measurement device 12031.

[0360] In FIG. 94, a vehicle 12100 has distance measurement devices 12101, 12102, 12103, 12104, and 12105 as a distance measurement device 12031.

[0361] Distance measuring devices 12101, 12102, 12103, 12104, and 12105 are provided, for example, at positions such as the front nose, side mirrors, rear bumper, back door, and the top of the windshield inside the vehicle cabin of vehicle 12100. Distance measuring device 12101 provided at the front nose and distance measuring device 12105 provided at the top of the windshield inside the vehicle cabin mainly acquire data ahead of vehicle 12100. Distance measuring devices 12102 and 12103 provided at the side mirrors mainly acquire data on the sides of vehicle 12100. Distance measuring device 12104 provided at the rear bumper or back door mainly acquires data behind vehicle 12100. The forward data acquired by distance measuring devices 12101 and 12105 is mainly used to detect preceding vehicles, pedestrians, obstacles, traffic lights, traffic signs, etc.

[0362] 94 shows an example of the detection ranges of the distance measurement devices 12101 to 12104. Detection range 12111 indicates the detection range of the distance measurement device 12101 provided on the front nose, detection ranges 12112 and 12113 indicate the detection ranges of the distance measurement devices 12102 and 12103 provided on the side mirrors, respectively, and detection range 12114 indicates the detection range of the distance measurement device 12104 provided on the rear bumper or back door.

[0363] For example, the microcomputer 12051 can extract, as a preceding vehicle, the three-dimensional object that is the closest three-dimensional object on the path of the vehicle 12100 and traveling in approximately the same direction as the vehicle 12100 at a predetermined speed (for example, 0 km / h or higher) by calculating the distance to each three-dimensional object within the detection ranges 12111 to 12114 and the change in this distance over time (relative speed with respect to the vehicle 12100) based on the distance data obtained from the distance measuring devices 12101 to 12104. Furthermore, the microcomputer 12051 can set a vehicle-to-vehicle distance to be maintained in advance in front of the preceding vehicle, and perform automatic braking control (including follow-up stop control), automatic acceleration control (including follow-up start control), etc. In this way, cooperative control can be performed for the purpose of automatic driving, which travels autonomously without relying on driver operation.

[0364] For example, the microcomputer 12051 classifies and extracts three-dimensional object data regarding three-dimensional objects into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects based on distance data obtained from the distance measuring devices 12101 to 12104, and can use the data for automatic obstacle avoidance. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. The microcomputer 12051 then determines the collision risk, which indicates the degree of risk of collision with each obstacle, and when the collision risk is equal to or greater than a set value and a collision is possible, the microcomputer 12051 can provide driving assistance for collision avoidance by outputting an alarm to the driver via the audio speaker 12061 or the display unit 12062, or by performing forced deceleration or avoidance steering via the drivetrain control unit 12010.

[0365] The above describes an example of a mobile object control system to which the technology according to the present disclosure can be applied. The technology according to the present disclosure can be applied to the distance measurement device 12031 in the above-described configuration.

[0366] The present technology can also be configured as follows. (1) at least one organic semiconductor layer; a concave mirror disposed on one side of the organic semiconductor layer; A surface light emitting device comprising at least one light emitting element portion including: (2) The surface light emitting device according to (1), wherein the light emitting element section further includes a reflector disposed on the other side of the organic semiconductor layer. (3) The surface light emitting device according to (2), wherein the distance between the organic semiconductor layer and the concave mirror is wider than the distance between the organic semiconductor layer and the reflecting mirror. (4) The surface light emitting device according to (2), wherein the distance between the organic semiconductor layer and the concave mirror is smaller than the distance between the organic semiconductor layer and the reflecting mirror. (5) The surface-emitting device according to any one of (1) to (4), wherein the at least one organic semiconductor layer includes a plurality of organic semiconductor layers having different emission wavelengths. (6) The surface-emitting device according to any one of (1) to (5), wherein the at least one organic semiconductor layer includes a plurality of organic semiconductor layers having different volumes. (7) The surface-emitting device according to any one of (1) to (6), wherein the at least one organic semiconductor layer includes a plurality of organic semiconductor layers arranged in an in-plane direction. (8) The surface light emitting device according to any one of (1) to (7), wherein the at least one organic semiconductor layer includes a plurality of organic semiconductor layers arranged in a stacking direction. (9) A surface-emitting device described in any one of (1) to (8), wherein at least one of the light-emitting element components is a plurality of light-emitting element components arranged in an array, and the organic semiconductor layers of at least two of the plurality of light-emitting element components have different emission wavelengths. (10) A surface-emitting device described in any one of (1) to (9), wherein at least one of the light-emitting element components is a plurality of light-emitting element components arranged in an array, and the organic semiconductor layers of at least two of the plurality of light-emitting element components are at different positions in the stacking direction. (11) The surface emitting device according to any one of (1) to (10), wherein the concave mirror contains a metal and / or a dielectric. (12) The surface emitting device according to any one of (1) to (11), wherein the concave mirror is made of a diffraction grating. (13) The surface emitting device according to any one of (2) to (12), wherein the reflecting mirror is made of a diffraction grating. (14) The surface emitting device according to any one of (1) to (13), wherein the concave mirror has a structure in which a plurality of multilayer film reflectors corresponding to a plurality of wavelengths are stacked. (15) The surface emitting device according to any one of (2) to (14), wherein the reflector has a structure in which a plurality of multilayer film reflectors corresponding to a plurality of wavelengths are stacked. (16) The surface light emitting device according to any one of (1) to (15), wherein the light emitting element section further includes an intermediate layer disposed between the organic semiconductor layer and the concave mirror. (17) The surface light emitting device according to (16), wherein the intermediate layer is made of a nitride, an oxide, a resin, a semiconductor, or an insulator. (18) The surface light emitting device according to (16) or (17), wherein the intermediate layer has a mesa structure. (19) The surface-emitting device according to any one of (2) to (18), further comprising an active layer disposed between the organic semiconductor layer and the concave mirror and / or between the organic semiconductor layer and the reflecting mirror, the active layer emitting excitation light that excites the organic semiconductor layer. (20) A surface-emitting device according to any one of (2) to (19), wherein the light-emitting element section further includes a transparent conductive film disposed between the reflecting mirror and the organic semiconductor layer and / or between the concave mirror and the organic semiconductor layer. (21) The surface light emitting device according to any one of (1) to (20), wherein at least one of the light emitting element components is a plurality of light emitting element components arranged in an array. (22) A light source device comprising the surface light emitting element according to any one of (1) to (21) and a driver that drives the light emitting element section. (23) A light source device comprising the surface light emitting element according to (21) and a driver capable of individually driving the plurality of light emitting element units. (24) An electronic device comprising the surface light emitting device according to any one of (1) to (21). (25) An electronic device comprising the light source device according to (22) or (23). [Explanation of symbols]

[0367] 10-1 to 10-30, 20: surface-emitting element, 100: intermediate layer, 101: organic semiconductor layer, 101A: first organic semiconductor layer (organic semiconductor layer), 101B: second organic semiconductor layer (organic semiconductor layer), 101C: third organic semiconductor layer (organic semiconductor layer), 102: concave mirror, 103: reflecting mirror, 104: first transparent conductive film (transparent conductive film), 105: second transparent conductive film (transparent conductive film), 113: active layer, 190: light source device.

Claims

1. at least one organic semiconductor layer; a concave mirror disposed on one side of the organic semiconductor layer; At least one light-emitting element component including the light-emitting element section further includes a reflector disposed on the other side of the organic semiconductor layer, The surface light emitting device, wherein the distance between the organic semiconductor layer and the concave mirror is smaller than the distance between the organic semiconductor layer and the reflecting mirror.

2. at least one organic semiconductor layer; a concave mirror disposed on one side of the organic semiconductor layer; At least one light-emitting element component including The at least one organic semiconductor layer includes a plurality of organic semiconductor layers having different emission wavelengths.

3. at least one organic semiconductor layer; a concave mirror disposed on one side of the organic semiconductor layer; At least one light-emitting element component including The at least one organic semiconductor layer includes a plurality of organic semiconductor layers having different volumes.

4. at least one organic semiconductor layer; a concave mirror disposed on one side of the organic semiconductor layer; At least one light-emitting element component including The at least one organic semiconductor layer includes a plurality of organic semiconductor layers arranged in an in-plane direction.

5. at least one organic semiconductor layer; a concave mirror disposed on one side of the organic semiconductor layer; At least one light-emitting element component including The at least one organic semiconductor layer includes a plurality of organic semiconductor layers arranged in a stacking direction.

6. The light-emitting element portion further includes a reflector disposed on the other side of the organic semiconductor layer, 6. The surface light emitting device according to claim 2, wherein the distance between said organic semiconductor layer and said concave mirror is wider than the distance between said organic semiconductor layer and said reflecting mirror.

7. At least one of the light-emitting element components is a plurality of light-emitting element components arranged in an array, 7. The surface light emitting device according to claim 1, wherein the organic semiconductor layers of at least two of the plurality of light emitting element components have different emission wavelengths.

8. At least one of the light-emitting element components is a plurality of light-emitting element components arranged in an array, 8. The surface light emitting device according to claim 1, wherein the organic semiconductor layers of at least two of the plurality of light emitting element components are located at different positions in the stacking direction.

9. 9. The surface light emitting device according to claim 1, wherein the concave mirror is configured to contain a metal and / or a dielectric.

10. 10. The surface emitting device according to claim 1, wherein the concave mirror is made of a diffraction grating.

11. A surface-emitting element as described in claim 1 or 6, wherein the reflector is made of a diffraction grating.

12. 12. The surface emitting device according to any one of 1 to 11, wherein the concave mirror has a structure in which a plurality of multilayer film reflectors corresponding to a plurality of wavelengths are stacked.

13. The surface light emitting device according to any one of claims 1 to 12, wherein the light emitting element section further comprises an intermediate layer disposed between the organic semiconductor layer and the concave mirror.

14. The surface light emitting device according to claim 13 , wherein the intermediate layer is made of a nitride, an oxide, a resin, a semiconductor, or an insulator.

15. at least one organic semiconductor layer; a concave mirror disposed on one side of the organic semiconductor layer; At least one light-emitting element component including the light-emitting element portion further includes an intermediate layer disposed between the organic semiconductor layer and the concave mirror, The intermediate layer has a mesa structure.

16. at least one organic semiconductor layer; a concave mirror disposed on one side of the organic semiconductor layer; At least one light-emitting element component including the light-emitting element section further includes a reflector disposed on the other side of the organic semiconductor layer, The surface light emitting device further comprises an active layer disposed between the organic semiconductor layer and the concave mirror and / or between the organic semiconductor layer and the reflecting mirror, the active layer emitting excitation light that excites the organic semiconductor layer.

17. The surface light-emitting element according to claim 1 , wherein the light-emitting element section further includes a transparent conductive film disposed between the reflecting mirror and the organic semiconductor layer and / or between the concave mirror and the organic semiconductor layer.

18. The surface light emitting device according to any one of claims 1 to 17, wherein the at least one light emitting element component is a plurality of light emitting element components arranged in an array.

19. A surface light emitting device according to any one of claims 1 to 18; a driver that drives the light-emitting element unit; A light source device comprising:

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