Semiconductor package and method for manufacturing semiconductor package

Abstract

This invention facilitates the size reduction of semiconductor packages in which pixels are provided.　A semiconductor package according to the invention comprises a transparent member, a semiconductor chip, a photosensitive rib and an interposer. In this semiconductor package, pixels are arranged on a portion of a chip surface of the semiconductor chip. The photosensitive rib is a photosensitive resin disposed between the area of the chip surface of the semiconductor chip to which no pixels are relevant and the transparent member. The interposer is electrically connected to the semiconductor chip.

Description

[Technical Field]

[0001] The present technology relates to a semiconductor package, and more particularly to a semiconductor package with a GOC (Glass On Chip) structure and a method for manufacturing the semiconductor package. [Background technology]

[0002] In recent years, advances in device wafer stacking technology have led to an increase in the placement of logic and pixel wiring below the chip in imaging devices, resulting in an increase in pixel occupancy. Meanwhile, the use of GOC structures aimed at package miniaturization is spreading, primarily in automotive packages (see, for example, Patent Document 1). Here, the GOC structure involves die-bonding a semiconductor chip to an interposer, establishing electrical connections using wire bonds or the like, applying an adhesive resin to the chip, mounting a cover glass on top, and protecting it with sealing or molding resin. When an imaging element is placed as a semiconductor chip, the adhesive resin is applied to areas other than the pixel area. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2016-72266 Summary of the Invention [Problem to be solved by the invention]

[0004] The conventional technology mentioned above uses a GOC structure to miniaturize semiconductor packages. However, when applying the adhesive resin, it is necessary to consider the accuracy of the application position, application stability, which is affected by resin properties such as thixotropy and viscosity, and the spread of the resin when mounting the glass, and ensure that the adhesive area is large enough to prevent the adhesive resin from interfering with the pixels. This makes further miniaturization difficult.

[0005] The present technology was developed in view of such circumstances, and aims to facilitate miniaturization of semiconductor packages in which pixels are provided. [Means for solving the problem]

[0006] The present technology has been made to solve the above-mentioned problems, and a first aspect thereof is a semiconductor package including a transparent member, a semiconductor chip having pixels arranged on a part of the chip plane, a photosensitive rib made of photosensitive resin arranged between the transparent member and an area of ​​the chip plane that does not correspond to the pixels, and an interposer electrically connected to the semiconductor chip, which has the effect of facilitating miniaturization.

[0007] In addition, in the first aspect, an adhesive resin may be further provided for bonding the photosensitive rib and the semiconductor chip together, thereby providing the effect that the photosensitive rib is bonded in a completely cured state.

[0008] Furthermore, the first side surface may further include a stopper, the semiconductor chip is disposed between the transparent member and the interposer, the direction from the interposer to the transparent member is defined as the upward direction, the photosensitive rib is formed around a predetermined region of the lower surface of the transparent member that faces the pixel, and the stopper may be formed between the predetermined region of the lower surface and the photosensitive rib, thereby suppressing the intrusion of bleed into the pixel.

[0009] In addition, in this first aspect, the photosensitive rib may be formed in close contact with both the transparent member and the semiconductor chip, thereby providing the effect of eliminating the need for adhesive resin.

[0010] In this first aspect, the transparent member may be a lens, which provides the effect of eliminating the need for a cover glass.

[0011] In this first aspect, the photosensitive rib may have a tapered cross section, which serves to suppress the incidence of reflected light on the pixels.

[0012] In addition, in this first aspect, the semiconductor chip may include a silicon substrate and an organic film formed on a portion of a surface of the silicon substrate, and the photosensitive rib may be disposed between the transparent member and an area of ​​the substrate surface where the organic film is not formed, thereby preventing defects due to peeling of the organic film.

[0013] In addition, in this first aspect, the semiconductor chip may have an opening, and the distance from the edge of the opening to the organic film may be not less than 200 micrometers, thereby preventing defects due to peeling of the organic film.

[0014] In addition, in this first aspect, the shape of the inner wall of the photosensitive rib, with the direction toward the pixels as the inward direction, may be a shape of a plurality of connected triangular prisms, which brings about the effect of improving optical characteristics.

[0015] In this first aspect, the shape of the outer wall of the photosensitive rib relative to the inner wall may be a shape of a plurality of connected triangular prisms, which brings about an effect of improving optical properties.

[0016] In addition, in this first aspect, the semiconductor device may further include a dam and a sealing resin that seals the semiconductor chip, the transparent member, and the interposer, the semiconductor chip being disposed between the transparent member and the interposer, the direction from the interposer to the transparent member being the upward direction, and the dam being formed on the upper surface of the transparent member around the light receiving region directly above the pixel, thereby preventing resin from spilling out.

[0017] In addition, in this first aspect, a portion of the sealing resin may light-shield a region of the upper surface of the transparent member between the outer periphery of the transparent member and the dam, thereby preventing the sealing resin from spilling out.

[0018] Furthermore, the first side surface may further include a molding resin that shields a region of the upper surface of the transparent member between the outer periphery of the transparent member and the dam, thereby preventing the molding resin from spilling out.

[0019] A second aspect of the present technology is a method for manufacturing a semiconductor package, comprising: a connection step for electrically connecting a semiconductor chip having pixels arranged on a portion of a predetermined chip plane to an interposer; a photosensitive rib formation step for forming a photosensitive resin as a photosensitive rib on one of both surfaces of a transparent member in an area not facing the pixels; and a mounting step for mounting the transparent member on which the photosensitive rib has been formed on the semiconductor chip, thereby providing an effect of facilitating miniaturization.

[0020] In addition, in this second aspect, the method may further include a coating step of coating a resist on the semiconductor chip, the semiconductor chip having a silicon substrate and an organic film formed on a surface of the silicon substrate, a resist removal step of removing a portion of the resist, and an organic film removal step of removing a portion of the organic film on which the resist is not coated, and the connection step may be performed after the organic film removal step, thereby providing the effect of avoiding defects due to peeling of the organic film. [Brief explanation of the drawings]

[0021] [Figure 1] 1 is an example of a cross-sectional view of a semiconductor package according to a first embodiment of the present technology. [Figure 2] 1 is an example of a plan view of a transparent member and a semiconductor chip according to a first embodiment of the present technology. [Figure 3] 5A to 5C are diagrams for explaining the effect of suppressing flare and the like in the first embodiment of the present technology. [Figure 4] 1 is an example of a cross-sectional view of a semiconductor package according to a first comparative example. [Figure 5] 2A to 2C are diagrams illustrating a method for manufacturing a semiconductor package according to a first embodiment of the present technology. [Figure 6] 2A to 2C are diagrams for explaining steps from die bonding to sealing in the first embodiment of the present technology. [Figure 7] 5A to 5C are diagrams illustrating a method for manufacturing a transparent member according to the first embodiment of the present technology. [Figure 8] 3 is an example of a flowchart showing a method for manufacturing a semiconductor package according to the first embodiment of the present technology. [Figure 9] 3 is an example of a flowchart showing a method for manufacturing a transparent member according to the first embodiment of the present technology. [Figure 10] 10A and 10B are diagrams illustrating an example of a cross-sectional shape of a photosensitive rib in a first modified example of the first embodiment of the present technology. [Figure 11] 10 is an example of a plan view of a transparent member according to a second modified example of the first embodiment of the present technology. [Figure 12] 10 is an example of a cross-sectional view of a semiconductor package according to a third modified example of the first embodiment of the present technology. [Figure 13] 10A to 10C are diagrams for explaining steps from die bonding to sealing in a third modified example of the first embodiment of the present technology. [Figure 14] 10 is an example of a flowchart showing a method for manufacturing a transparent member according to a third modified example of the first embodiment of the present technology. [Figure 15] 10 is an example of a cross-sectional view of a semiconductor package according to a fourth modified example of the first embodiment of the present technology. [Figure 16] 10A to 10C are diagrams for explaining a manufacturing method up to placement of a transparent member in a fourth modified example of the first embodiment of the present technology. [Figure 17] 10 is an example of a flowchart showing a method for manufacturing a transparent member according to a fourth modified example of the first embodiment of the present technology. [Figure 18]10 is an example of a cross-sectional view of a semiconductor package according to a second embodiment of the present technology. [Figure 19] 10 is an example of a cross-sectional view of a semiconductor package according to a second comparative example. [Figure 20] 10A to 10C are diagrams for explaining steps up to removal of the resist according to the second embodiment of the present technology. [Figure 21] 10A to 10C are diagrams for explaining steps up to opening in a silicon substrate according to a second embodiment of the present technology. [Figure 22] 13 is an example of a bottom view of a transparent member according to a third embodiment of the present technology. [Figure 23] 13 is an example of a perspective view of a photosensitive rib according to a third embodiment of the present technology. [Figure 24] 10A to 10C are diagrams illustrating a method for manufacturing a transparent member according to a third embodiment of the present technology. [Figure 25] 13 is an example of a bottom view of a transparent member in a modified example of the third embodiment of the present technology. [Figure 26] 13A and 13B are examples of a cross-sectional view and a plan view of a semiconductor package according to a fourth embodiment of the present technology. [Figure 27] 10 is an example of a cross-sectional view of a semiconductor package according to a third comparative example. [Figure 28] 10A to 10C are diagrams for explaining a method for manufacturing a semiconductor package according to a fourth embodiment of the present technology. [Figure 29] 13 is an example of a cross-sectional view of a semiconductor package according to a modified example of the fourth embodiment of the present technology. DETAILED DESCRIPTION OF THE INVENTION

[0022] Hereinafter, modes for carrying out the present technology (hereinafter referred to as embodiments) will be described. The description will be made in the following order. 1. First embodiment (example in which photosensitive ribs are formed on the lower surface of a transparent member) 2. Second embodiment (an example in which a photosensitive rib is formed on the lower surface of a transparent member and the organic film below the photosensitive rib is removed) 3. Third embodiment (an example in which a photosensitive rib is formed on the lower surface of a transparent member and its inner wall is jagged) 4. Fourth embodiment (an example in which a photosensitive rib is formed on the lower surface of a transparent member and a dam is formed on the upper surface thereof)

[0023] <1. First embodiment> [Example of semiconductor package configuration] 1 is an example of a cross-sectional view of a semiconductor package 100 according to a first embodiment of the present technology. The semiconductor package 100 is a semiconductor package to be mounted on an imaging device or the like, and includes a transparent member 110, a semiconductor chip 200, and an interposer 150.

[0024] The semiconductor chip 200 captures image data. A plurality of pixels 211 are arranged on a part of the chip plane of the semiconductor chip 200. For example, a solid-state image sensor is used as the semiconductor chip 200.

[0025] Hereinafter, an axis perpendicular to the chip plane of the semiconductor chip 200 will be referred to as the "Z-axis," and a specific axis parallel to the chip plane will be referred to as the "X-axis." An axis perpendicular to the X-axis and Z-axis will be referred to as the "Y-axis." The figure is a cross-sectional view seen from the Y-axis direction. Furthermore, the semiconductor chip 200 is disposed between the interposer 150 and the transparent member 110, and the direction from the interposer 150 to the transparent member 110 will be referred to as the upward direction.

[0026] In addition, although some of the regions in this figure are marked with patterns, these patterns are merely there to make it easier to identify the range of the regions and are unrelated to the actual appearance or material. Also, parts with the same pattern do not necessarily represent the same material. The same applies to the following drawings.

[0027] The interposer 150 is a substrate that relays signals between the semiconductor chip 200 and a circuit external to the semiconductor package 100. Materials that can be used for the interposer 150 include ceramic, organic materials, FPC (Flexible Printed Circuits), glass, and silicon. A portion of the upper surface of the interposer 150 is bonded to the lower surface of the semiconductor chip 200 by a die attach material 143.

[0028] As the die attach material 143, an epoxy-based, acrylic-based, or silicone-based paste material, or a DAF (Die Attach Film) is used.

[0029] Furthermore, bonding pads (not shown) are provided on the upper surface of the interposer 150 in an area that is not bonded to the semiconductor chip 200, and are electrically connected (i.e., wire-bonded) to the semiconductor chip 200 by wires 141. Note that instead of wire bonding, the interposer 150 and the semiconductor chip 200 can also be electrically connected by side wiring or flip-chip mounting.

[0030] Furthermore, a plurality of solder balls 142 are arranged on the lower surface of the interposer 150. The semiconductor package 100 is mounted on an external substrate or the like by means of these solder balls 142. A semiconductor package mounted in this manner is also called a BGA (Ball Grid Array) package.

[0031] Instead of a BGA package, a surface mount type package other than a BGA, such as an LGA (Land Grid Array) or an LCC (Leaded Chip Carrier), can also be used as the semiconductor package 100. Alternatively, instead of these surface mount types, a lead insertion type package, such as a DIP (Dual In-line Package), a SIP (Single In-line Package), or a PGA (Pin Grid Array) can also be used as the semiconductor package 100.

[0032] The transparent member 110 is, for example, a cover glass, and is placed so that its bottom surface faces the top surface of the semiconductor chip 200. Borosilicate glass, a quartz plate, or a transparent resin plate is used as this transparent member 110. Note that a lens may be placed as the transparent member 110 instead of the cover glass.

[0033] Furthermore, a photosensitive resin is formed by lithography on the area of ​​the lower surface of the transparent member 110 that does not face the pixels 211. This photosensitive resin is hereinafter referred to as "photosensitive rib 121." Note that an AR (Anti-Reflection) coat, an IR (Infra-Red) cut coat, a visible light cut coat, or the like may also be formed on the upper surface of the transparent member 110.

[0034] The photosensitive rib 121 (i.e., photosensitive resin) is made of a photosensitive material that generates a component that hardens a monomer when exposed to ultraviolet light, or a material that hardens and exhibits a negative characteristic when exposed to ultraviolet light. Examples of the latter include epoxy silicone and epoxy acrylic materials. Furthermore, materials that have a low outgassing amount after photolithographic patterning are preferred. For example, it is preferable that the outgassing amount during the heating process at 200°C for 10 minutes during assembly is 5,000 to 20,000 ppm. Furthermore, materials with good patterning properties and adhesion are preferred.

[0035] Furthermore, the photosensitive rib 121 is formed in an area within a certain range in the X-axis direction or the Y-axis direction from the end (such as the right end X0 in the figure) of the transparent member 110. Note that in the figure, the right end of the photosensitive rib 121 is aligned with the right end of the transparent member 110, but the right end of the photosensitive rib 121 can also be spaced apart from the right end of the transparent member 110.

[0036] The cross-sectional shape of the photosensitive rib 121 is rectangular. The size of the photosensitive rib 121 in a direction parallel to the chip plane of the semiconductor chip 200 (X-axis direction or Y-axis direction) is referred to as "width," and the size of the photosensitive rib 121 in the Z-axis direction is referred to as "height." The width W of the photosensitive rib 121 is, for example, 0.05 millimeters (mm) or more, and the height H is 0.01 to 0.03 millimeters (mm).

[0037] Furthermore, the photosensitive rib 121 (photosensitive resin) is not completely reacted during the molding stage, leaving uncured portions, and is adhered to the semiconductor chip 200 by applying heat when the transparent member 110 is placed. At this time, in order to make the photosensitive resin conform to the irregularities of the semiconductor chip 200 and ensure sufficient adhesion, it is desirable to set the modulus of elasticity of the uncured portions to 100 megapascals (MPa) or less.

[0038] The sealing resin 130 seals and protects the transparent member 110, the semiconductor chip 200, and the interposer 150. The sealing resin 130 may be an epoxy-based, acrylic-based, or silicone-based resin.

[0039] It is also possible to further form a molding resin for protection after forming the sealing resin 130. Alternatively, the transparent member 110, the semiconductor chip 200, and the interposer 150 can be disposed in the semiconductor package 100 in which a cavity has been formed in advance by a partition wall or the interposer 150, without providing a molding resin.

[0040] As described above, the structure in which the semiconductor chip 200 is electrically connected to the interposer 150, the transparent member 110 (cover glass) is mounted thereon, and the resulting structure is protected by the sealing resin 130 or mold resin corresponds to the GOC structure.

[0041] In addition, photosensitive ribs 121 (i.e., photosensitive resin) are arranged between the transparent member 110 and areas of the chip plane of the semiconductor chip 200 that do not correspond to the pixels 211. Compared to applying a paste-like adhesive resin, photosensitive resin can be molded with high precision by exposure and development, making it possible to design shrinkage of the adhesive portion. In addition, by setting exposure conditions that do not cause deformation (in other words, the resin does not spread) when thermocompressed onto the semiconductor chip 200, it is no longer necessary to consider the amount of resin spillover during design.

[0042] 2 is an example of a plan view of the transparent member 110 and the semiconductor chip 200 according to the first embodiment of the present technology. In the figure, "a" is a bottom view of the transparent member 110 before placement. "b" in the figure is a top view of the semiconductor chip 200.

[0043] The thick line in the figure, designated a, indicates the outer periphery of the transparent member 110. The gray portion indicates the portion where the photosensitive rib 121 is formed. As illustrated in the figure, designated a, the photosensitive rib 121 is formed around the rectangular opening region 111.

[0044] As shown in FIG. 1B, a rectangular imaging section 210 is formed on the chip plane (i.e., the top surface) of the semiconductor chip 200. In this imaging section 210, a plurality of pixels 211 are arranged in a two-dimensional lattice pattern. Each of the pixels 211 photoelectrically converts incident light to generate a pixel signal. Then, a signal processing circuit (not shown) at a subsequent stage processes these pixel signals to generate image data.

[0045] The opening region 111 includes an area that faces the imaging unit 210 when the transparent member 110 is placed. The area within the opening region 111 surrounded by a dotted line indicates the area that faces the imaging unit 210. It is preferable to provide a predetermined margin between this area that faces the imaging unit 210 and the photosensitive rib 121. For example, in the X-axis direction, the right end X3 and left end X4 of the imaging unit 210 are located between the left end X1 and right end X2 of the opening region 111. The same applies to the Y-axis direction.

[0046] As illustrated in the figure, the photosensitive ribs 121 are formed on the lower surface of the transparent member 110 in an area other than the area facing the pixels 211 (that is, the area surrounded by the dotted line in the figure).

[0047] 3 is a diagram for explaining the effect of suppressing flare in the first embodiment of the present technology. It is preferable that the transmittance of the photosensitive rib 121 (photosensitive resin) is set to 98 percent (%) or more, and the reflectance is set to 0.01 to 1 percent (%). This allows reflected light incident on the upper surface of the semiconductor chip 200 to pass through the photosensitive rib 121, thereby suppressing re-entry of unnecessary light. As a result, the occurrence of flare and ghosting is suppressed.

[0048] As shown in the figure, the right end of the photosensitive rib 121 can be spaced apart from the right end of the transparent member 110. The same applies to the left end.

[0049] Here, a configuration in which the transparent member 110 is adhered to the semiconductor chip 200 with a paste-like adhesive resin instead of the photosensitive rib 121 is assumed as a first comparative example.

[0050] FIG. 4 is an example cross-sectional view of a semiconductor package in the first comparative example. In this first comparative example, a semiconductor chip 200 is die-bonded to an interposer 150 and electrically connected. After that, an adhesive resin is applied to the area other than the pixel area using a dispenser or the like, and a transparent member 110 is mounted on top of that. In this process, device design must take into account factors such as the accuracy of the adhesive resin application position on the semiconductor chip 200, the stability of the application, which depends on the resin's physical properties such as thixotropy and viscosity, and the spread of the resin when mounted on the glass. In particular, the device design must ensure a sufficient size so that the adhesive resin does not interfere with the pixel area. This reduces the benefits of wafer stacking technology, which allows for device shrinkage. For example, the adhesive resin width must be 0.5 millimeters (mm) or more.

[0051] Furthermore, if the adhesive resin has low transmittance and high reflectance, and the distance between the adhesive resin and the pixel is short, the light incident on the semiconductor chip 200 may be reflected by the adhesive resin, causing flare or ghosting.

[0052] 1, photosensitive ribs 121 (photosensitive resin) are disposed between the transparent member 110 and the area of ​​the chip surface that does not correspond to the pixels 211. This photosensitive resin can be molded with high precision by exposure and development, allowing shrinkage of the adhesive area. For example, the width W of the photosensitive ribs 121 can be set to approximately 0.05 millimeters (mm).

[0053] Furthermore, by disposing the photosensitive ribs 121 that have high transmittance and low reflectance, flare and ghosts can be suppressed.

[0054] [Semiconductor package manufacturing method] 5 is a diagram for explaining a manufacturing method of a semiconductor package 100 according to the first embodiment of the present technology. The manufacturing system manufactures a plurality of semiconductor chips 200 as illustrated in FIG. 5. The manufacturing system die-bonds each of the semiconductor chips 200 to an interposer 150 with a die attach material 143 as illustrated in FIG. 5.

[0055] Then, as illustrated in c in the figure, the manufacturing system electrically connects each of the semiconductor chips 200 to the interposer 150 by wires 141. As illustrated in d in the figure, the manufacturing system places a transparent member 110 having photosensitive ribs 121 formed on its lower surface on the upper surface of the semiconductor chip 200.

[0056] Then, as shown in FIG. 15(e), the manufacturing system seals the structure with sealing resin 130. As shown in FIG. 15(f), the manufacturing system attaches each of the solder balls 142 to the underside of the interposer 150. The structure is separated into a plurality of pieces, and a plurality of semiconductor packages 100 are manufactured.

[0057] 6A to 6D are diagrams for explaining the steps from die bonding to sealing in the first embodiment of the present technology, in which a to d are enlarged views of b, c, d, and e in FIG.

[0058] The manufacturing system performs die bonding as shown in FIG. 6A and electrical connection as shown in FIG. 6B. Then, as shown in FIG. 6C, the manufacturing system thermocompresses a transparent member 110 with photosensitive ribs 121 (photosensitive resin) to the area of ​​the chip surface other than the pixels 211. The photosensitive resin is not completely cured during exposure, but is formed into a shape in a semi-cured state while retaining its adhesive function. By setting the modulus of elasticity (e.g., 100 MPa or less) to conform to the unevenness of the device during thermocompression bonding, it is possible to reduce unbonded areas.

[0059] The manufacturing system then forms the sealing resin 130 as shown in d in the figure.

[0060] Fig. 7 is a diagram for explaining a method for manufacturing transparent member 110 according to the first embodiment of the present technology. The step in Fig. 7 is performed before c in Fig. 6. The steps in Fig. 6 and Fig. 7 can be performed in parallel or sequentially.

[0061] As shown in FIG. 7A, the manufacturing system applies a photosensitive resin to a glass wafer. The gray area in FIG. 7A indicates the photosensitive resin. As shown in FIG. 7B, the manufacturing system exposes and develops the photosensitive resin while masking the areas facing the pixels 211. As shown in FIG. 7C, the manufacturing system divides the glass wafer into individual chips. Through these steps, a transparent member 110 with photosensitive ribs 121 is formed.

[0062] As shown in the figure, by forming a film of photosensitive resin on the transparent member 110 (glass) side, development can be carried out without having to consider damage to the semiconductor chip 200 side. This reduces resin residue, leading to improved yield. Furthermore, because the photosensitive resin is exposed from the resin side without going through the transparent member 110, there is no need to consider wavelength attenuation due to the type of cover glass or coating.

[0063] Furthermore, by setting exposure conditions that prevent deformation (in other words, the resin from spreading) when thermocompressing the semiconductor chip 200, it becomes unnecessary to consider the amount of resin spilling out during design.

[0064] FIG. 8 is an example of a flowchart showing a method for manufacturing a semiconductor package according to the first embodiment of the present technology.

[0065] The manufacturing system die-bonds each of the semiconductor chips 200 to the interposer 150 (step S901) and electrically connects each of the semiconductor chips 200 to the interposer 150 (step S902). Then, the manufacturing system mounts the transparent member 110 on which the photosensitive ribs 121 are formed on the upper surface of the semiconductor chip 200 (step S903) and seals it with the sealing resin 130 (step S904). The manufacturing system attaches the solder balls 142 (step S905) and separates the structure into multiple pieces (step S906). After step S906, the manufacturing system completes the manufacturing process of the semiconductor package 100.

[0066] FIG. 9 is an example of a flowchart showing a method for manufacturing transparent member 110 according to the first embodiment of the present technology.

[0067] The manufacturing system applies a photosensitive resin to a glass wafer (step S911). The manufacturing system exposes and develops the photosensitive resin while masking the portions facing the pixels 211 (step S912). The manufacturing system divides the glass wafer into chips (step S914). After step S914, the manufacturing system completes the manufacturing process of the transparent member 110 and starts the subsequent process.

[0068] As described above, according to the first embodiment of the present technology, the photosensitive rib 121 (photosensitive resin) is disposed between the transparent member 110 and the region of the semiconductor chip 200 that does not correspond to pixels, so that the adhesive portion can be shrunk more than when adhesive resin is used. This makes it easier to miniaturize the semiconductor package 100.

[0069] [First Modification] In the first embodiment described above, the photosensitive ribs 121 are formed to have a rectangular cross-sectional shape, but the cross-sectional shape of the photosensitive ribs 121 is not limited to a rectangular shape. The semiconductor package 100 of the first modification of the first embodiment differs from the first embodiment in that the photosensitive ribs 121 have a tapered cross-sectional shape.

[0070] 10 is a diagram showing an example of a cross-sectional shape of the photosensitive rib 121 in a first modified example of the first embodiment of the present technology. As shown in a in the figure, in the first modified example of the first embodiment, the area of ​​the upper surface of the photosensitive rib 121 is smaller than that of the lower surface. As a result, the photosensitive rib 121 tapers upward (in other words, is tapered).

[0071] As shown in FIG. 11B, the area of ​​the upper surface of the photosensitive rib 121 may be made larger than that of the lower surface, so that the photosensitive rib 121 is tapered downward.

[0072] Flare and ghosting occur in different ways depending on the angle of the incident light (optical path). With photosensitive resin, it is possible to control the shape by adjusting the focus during exposure, and as shown in the example in the figure, it is possible to select the shape that suits the application.

[0073] Furthermore, the transmittance and reflectance that are effective in suppressing flare and ghosting differ depending on the module installed, but because the photosensitive resin itself can be colored, it is possible to control the transmittance and reflectance to the desired level.

[0074] Furthermore, by forming the photosensitive rib 121 in a tapered shape, it is possible to reduce the light reflected by the photosensitive rib 121 and suppress the incidence of the reflected light on the pixels.

[0075] As described above, according to the first modification of the first embodiment of the present technology, the photosensitive rib 121 is tapered, thereby making it possible to suppress the incidence of reflected light into pixels.

[0076] [Second Modification] In the first embodiment described above, the photosensitive ribs 121 are formed around the rectangular opening region 111, but the photosensitive ribs 121 can also be formed in a region other than the periphery of the rectangle. The semiconductor package 100 of this second modified example of the first embodiment differs from the first embodiment in that the shape of the region in the transparent member 110 where the photosensitive ribs 121 are formed is different.

[0077] 11 is an example of a plan view of a transparent member 110 according to a second modified example of the first embodiment of the present technology. The gray portion in the drawing indicates an area where the photosensitive ribs 121 are formed.

[0078] As shown in the figure (a), in the second modified example of the first embodiment, the four corners of the opening region 111 are rounded to form a rounded rectangle. Photosensitive ribs 121 are formed around this rounded rectangle. By rounding the four corners, it is possible to reduce stress on the adhesive portion.

[0079] In recent years, high heat resistance is often required for package structures to accommodate reflow mounting. By using photosensitive resin, it is possible to consistently produce dimensions and shapes (such as rounded rectangles) that alleviate stress on the adhesive area. In addition, complex resin shapes that cannot be achieved with paste materials can be formed by exposure to light, making it possible to accommodate these shapes.

[0080] For example, as shown in FIG. 1B, the photosensitive ribs 121 may be formed in a plurality of concentric rectangular regions.

[0081] Alternatively, as shown in c in the figure, when multiple rectangular imaging units 210 are arranged on one semiconductor chip 200, the photosensitive ribs 121 can be formed in an island shape to avoid them. The area surrounded by the dotted line in c in the figure indicates the area facing the imaging units 210.

[0082] As shown in the figure, the photosensitive rib 121 can be designed to have various shapes depending on the application, such as the periphery of a rounded rectangle, a concentric polygon, or an island shape.

[0083] As described above, according to the second modified example of the first embodiment of the present technology, the photosensitive rib 121 is formed around the periphery of the rounded rectangle, so that the stress applied to the adhesive portion can be alleviated.

[0084] [Third Modification] In the first embodiment described above, the photosensitive ribs 121 are bonded to the semiconductor chip 200 by thermocompression bonding, but the photosensitive ribs 121 and the semiconductor chip 200 can also be bonded with a different adhesive resin. The semiconductor package 100 of this third modified example of the first embodiment differs from the first embodiment in that the photosensitive ribs 121 and the semiconductor chip 200 are bonded with an adhesive resin.

[0085] 12 is an example of a cross-sectional view of a semiconductor package 100 according to a third modified example of the first embodiment of the present technology. The semiconductor package 100 according to the third modified example of the first embodiment differs from the first embodiment in that the lower surface of the photosensitive rib 121 and the upper surface of the semiconductor chip 200 are bonded together by an adhesive resin 122.

[0086] FIG. 13 is a diagram for explaining steps from die bonding to sealing in the third modified example of the first embodiment of the present technology.

[0087] The manufacturing system performs die bonding as illustrated in FIG. 1A, and electrical connection as illustrated in FIG. 1B. Then, the manufacturing system places the transparent member 110 with the photosensitive ribs 121 fully cured in advance as illustrated in FIG. 1C. The manufacturing system then applies low-viscosity adhesive resin 122 to the outside of the transparent member 110 and performs penetration bonding using capillary action. As a result, the adhesive resin 122 fills the gap between the bottom surface of the photosensitive ribs 121 and the top surface of the semiconductor chip 200 as illustrated in FIG. 1D.

[0088] FIG. 14 is an example of a flowchart showing a method for manufacturing a transparent member according to the third modified example of the first embodiment of the present technology.

[0089] The manufacturing system applies a photosensitive resin to the glass wafer (step S911), and then performs exposure and development (step S912). The manufacturing system then performs a hard bake to completely cure the photosensitive resin (step S913). After curing, the photosensitive resin can be used as a spacer. The manufacturing system then divides the glass wafer into individual chips (step S914).

[0090] Thus, according to the third variant of the first embodiment of the present technology, the photosensitive rib 121 and the semiconductor chip 200 are bonded together by the adhesive resin 122, so that the photosensitive rib 121 can be fully hardened in advance before the transparent member 110 is placed.

[0091] [Fourth Variation] In the third modified example of the first embodiment described above, the photosensitive rib 121 and the semiconductor chip 200 are bonded together with the adhesive resin 122, but there is a risk that the liquid additive in the adhesive resin 122 will spurt out (i.e., bleed), and the liquid may infiltrate into the pixels. The semiconductor package 100 of this fourth modified example of the first embodiment differs from the first embodiment in that a stopper is used to prevent the bleed from infiltrating into the pixels.

[0092] 15 is an example of a cross-sectional view of a semiconductor package 100 according to a fourth modified example of the first embodiment of the present technology. A stopper 123 is further formed on the lower surface of the transparent member 110 according to the fourth modified example of the first embodiment.

[0093] The stoppers 123 are photosensitive resins formed between the photosensitive ribs 121 and the areas of the underside of the transparent member 110 that face the pixels 211. These stoppers 123 can prevent bleeding from entering the pixels. In addition, in a fourth modification of the first embodiment, the photosensitive resin is applied multiple times, and exposure and development are repeated to form the photosensitive ribs 121 whose size in the Z-axis direction is larger than that of the stoppers 123.

[0094] FIG. 16 is a diagram for explaining a manufacturing method up to placement of transparent member 110 in the fourth modified example of the first embodiment of the present technology.

[0095] The manufacturing system applies a photosensitive resin to the upper surface of the glass wafer, as illustrated in FIG. 1A. The gray area in FIG. 1A represents the photosensitive resin. The manufacturing system masks the areas other than the stopper 123 and the lower part of the photosensitive rib 121, exposes the mask, and develops the mask, as illustrated in FIG. 1B. The manufacturing system then hard bakes the photosensitive resin to completely harden it. This forms the stopper 123 and the lower part of the photosensitive rib 121.

[0096] Then, the manufacturing system applies photosensitive resin again, as shown in c in the figure. As shown in d in the figure, the manufacturing system masks the areas other than the upper part of the photosensitive rib 121, exposes the area, and develops it. Furthermore, the manufacturing system performs hard baking to completely harden the photosensitive resin. This forms the upper part of the photosensitive rib 121.

[0097] The manufacturing system then divides the glass wafer into individual chips, and as shown in e in the figure, places the transparent member 110 upside down on the semiconductor chip 200. The manufacturing system then performs penetration bonding using adhesive resin 122.

[0098] In the manufacturing system, the process from applying the photosensitive resin to exposure and development is carried out twice, but it is also possible to carry out the process three or more times.

[0099] FIG. 17 is an example of a flowchart showing a method for manufacturing transparent member 110 in the fourth modified example of the first embodiment of the present technology.

[0100] The manufacturing system applies a photosensitive resin to the upper surface of the glass wafer (step S911), and performs exposure and development (step S912).The manufacturing system then performs hard baking to completely harden the photosensitive resin (step S913).

[0101] The manufacturing system then applies a photosensitive resin again (step S921), and performs exposure and development (step S922).The manufacturing system then hard bakes the glass wafer (step S923), and divides the glass wafer into chips (step S914).

[0102] As described above, according to the fourth variant of the first embodiment of the present technology, a stopper 123 is formed between the area of ​​the underside of the transparent member 110 facing the pixel 211 and the photosensitive rib 121, thereby preventing bleeding from entering the pixel 211.

[0103] <2. Second Embodiment> In the first embodiment described above, no organic film was formed inside the semiconductor chip 200, but the photoelectric conversion film of the pixels, microlenses, etc. can also be formed from an organic film. However, since organic films generally have weaker adhesion than inorganic films, there is a risk that the organic film in the portion where the photosensitive rib 121 is formed may peel off due to stress. The semiconductor package 100 of this second embodiment differs from the first embodiment in that the organic film below the photosensitive rib 121 is removed.

[0104] 18 is an example of a cross-sectional view of a semiconductor package 100 according to the second embodiment of the present technology. In the enlarged view at the bottom of the figure, the sealing resin 130 and the wires 141 are omitted.

[0105] The semiconductor chip 200 of the second embodiment includes a silicon substrate 240 and an organic film 230. The organic film 230 is formed on a portion of the substrate surface of the silicon substrate 240. The organic film 230 includes an optical unit (such as a microlens) and a photoelectric conversion unit within a pixel. Pads 241 for wire bonding are formed on the silicon substrate 240, and the upper portion of the pad 241 from coordinate X5 to coordinate X6 on the substrate surface is open in the Z-axis direction. The organic film 230 and the silicon substrate 240 are covered with an inorganic film 220 such as silicon dioxide (SiO2).

[0106] Furthermore, the photosensitive rib 121 of the second embodiment is disposed between an area of ​​the substrate surface of the silicon substrate 240 where the organic film 230 is not formed and the transparent member 110. For example, the organic film 230 is not formed in the area from the coordinate X6 at the left end of the opening to the coordinate X9. The photosensitive rib 121 is disposed in the range from the coordinate X7 to the coordinate X8 within this area.

[0107] The distance L from the edge of the opening (such as X6) to the organic film 230 is set to, for example, 200 micrometers (μm) or more.

[0108] Here, a second comparative example is assumed in which an organic film 230 is formed on the adhesion portion of the photosensitive rib 121.

[0109] 19 is an example of a cross-sectional view of a semiconductor package in a second comparative example. In this second comparative example, an organic film 230 is formed in the range from the coordinate X6 of the left edge of the left opening to the right edge (not shown) of the right opening. A photosensitive rib 121 is adhered to the organic film 230. In general, organic films have weaker adhesion than inorganic films, so in the structure shown in the figure, there is a risk that the organic film 230 will peel off due to stress generated in the adhesion portion of the photosensitive rib 121.

[0110] In contrast, in the semiconductor package 100 illustrated in FIG. 18, the photosensitive ribs 121 are removed from the adhesive portions of the photosensitive ribs 121, so that defects due to peeling of the organic film 230 can be avoided.

[0111] 20 is a diagram for explaining the process up to the removal of the resist in the second embodiment of the present technology. As illustrated in FIG. 20A, the manufacturing system forms a wafer having an organic film 230 formed on the entire surface by a normal CIS (CMOS Image Sensors) process.

[0112] As shown in FIG. 1B, the manufacturing system applies resist 300 to the entire wafer. Then, as shown in FIG. 1C, the manufacturing system removes the resist 300 around the pad 241 by etching and cleaning. For example, the resist 300 in the area to the left of coordinate X9 in FIG. 1B is removed.

[0113] Next, as illustrated in d in the figure, the manufacturing system removes the organic film 230 in the area where the resist 300 has been removed (such as the left side of the coordinate X9) by etching and cleaning.

[0114] 21 is a diagram for explaining the process up to the opening in the silicon substrate in the second embodiment of the present technology. The process in this figure is carried out after the process of removing the organic film 230.

[0115] The manufacturing system forms an inorganic film 220 on the entire surface, as shown in FIG. 1A, and then applies a resist 300, as shown in FIG.

[0116] Next, as shown in c in the figure, the manufacturing system patterns only the upper part of the pad (the region from coordinates X5 to X6), and as shown in d in the figure, opens the upper part of the pad by etching.

[0117] After the steps illustrated in FIGS. 20 and 21, the wafer is divided into individual pieces, and the steps from b onward in FIG. 5 are carried out.

[0118] As described above, according to the second embodiment of the present technology, the organic film 230 is removed from the adhesion portion of the photosensitive rib 121, so that defects due to peeling of the organic film 230 can be avoided.

[0119] <3. Third Embodiment> In the first embodiment described above, photosensitive ribs 121 were formed around the areas facing the pixels on the underside of transparent member 110, but light reflection around the pixels can enter the pixels and degrade their optical characteristics. The semiconductor package 100 of this third embodiment differs from the first embodiment in that the inner walls of photosensitive ribs 121 are jagged to improve their optical characteristics.

[0120] 22 is an example of a bottom view of the transparent member 110 according to the third embodiment of the present technology. The rectangular area surrounded by a dotted line in the figure indicates the area facing the pixels 211 (not shown). The direction toward these pixels 211 is referred to as the "inner direction." The arrows in the figure indicate the inward direction. The gray portion indicates the area where the photosensitive ribs 121 are formed. Of the side walls of the photosensitive ribs 121, the inner wall surface is referred to as the "inner wall" and the outer wall surface is referred to as the "outer wall."

[0121] In the third embodiment, multiple triangular depressions are formed on the inner wall of the photosensitive rib 121. These depressions give the inner wall of the photosensitive rib 121 a shape of multiple connected triangular prisms. In other words, the inner wall of the photosensitive rib 121 is jagged when viewed from the Z-axis direction.

[0122] By forming the inner wall of the photosensitive rib 121 into the shape of multiple connected triangular prisms, the light is attenuated in the recesses between the triangular prisms, reducing reflected light. This improves the optical characteristics of the pixel. The dashed dotted line in the figure indicates the optical path of reflected light.

[0123] FIG. 23 is an example of a perspective view of a photosensitive rib 121 according to the third embodiment of the present technology. The angle R1 formed by the triangular depression formed on the inner wall is, for example, 90 degrees or less. The thick line in the figure is a line segment connecting the vertex of the lower surface of the triangular prism formed by the depression to the vertex of its upper surface. The dotted arrow indicates the direction of a straight line along this line segment (i.e., the generatrix of the triangle). The angle R2 formed by this generatrix and an axis (such as the X-axis) parallel to the plane of the transparent member 110 is, for example, 90 degrees, as illustrated in a in the figure.

[0124] As shown in Fig. 1B, the generatrix of the triangular prism can be tilted so that the angle R2 between the generatrix and an axis parallel to the plane (such as the X-axis) is an angle other than 90 degrees. A prism tilted in this way is called an oblique prism.

[0125] FIG. 24 is a diagram for explaining a manufacturing method of the transparent member 110 according to the third embodiment of the present technology. As illustrated in FIG. 24 a, the manufacturing system places a glass wafer that will become the transparent member 110, and as illustrated in FIG. 24 b, applies a photosensitive resin to the upper surface of the glass wafer. The gray area in FIG. 24 indicates the photosensitive resin. Then, as illustrated in FIG. 24 c, the manufacturing system patterns the photosensitive ribs 121 by exposure and development, and turns the product upside down. After the steps in FIG. 24 a, the steps from d onward in FIG. 5 are performed.

[0126] In the figure, d, e, and f are examples of the portions to be singulated on the plane of the glass wafer of a, b, and c in the figure. As shown in f in the figure, photosensitive ribs 121 with jagged inner walls are formed during patterning.

[0127] The second embodiment can also be applied to the third embodiment.

[0128] As described above, according to the third embodiment of the present technology, the inner wall of the photosensitive rib 121 is formed in the shape of multiple connected triangular prisms, thereby reducing reflected light and improving the optical characteristics of the pixel.

[0129] [Variations] In the third embodiment described above, the inner walls of the photosensitive ribs 121 are jagged, but the outer walls can also be jagged. The semiconductor package 100 in this modified example of the third embodiment differs from the third embodiment in that the outer walls of the photosensitive ribs 121 are also jagged.

[0130] 25 is an example of a bottom view of a transparent member 110 in a modified example of the third embodiment of the present technology. The transparent member 110 in this modified example of the third embodiment differs from the third embodiment in that the outer wall of the photosensitive rib 121 facing the inner wall has a shape made up of multiple connected triangular prisms. By making the outer wall jagged as well, unwanted light from the outside can be attenuated by the depressions in the outer wall, further improving the optical characteristics.

[0131] As described above, according to the modified example of the third embodiment of the present technology, the outer wall of the photosensitive rib 121 is formed in the shape of multiple connected triangular prisms, thereby reducing light from outside and further improving the optical characteristics of the pixel.

[0132] <4. Fourth embodiment> In the first embodiment described above, sealing is performed with sealing resin 130, but to suppress flare, a light-shielding film can be formed on the upper surface of transparent member 110 using part of that sealing resin 130. However, when forming the light-shielding film with sealing resin 130, the sealing resin 130 may overflow into the region directly above the pixels, making it impossible to form the desired shape. The semiconductor package 100 of this fourth embodiment differs from the first embodiment in that a dam is formed on the upper surface of transparent member 110 to prevent resin overflow.

[0133] 26A and 26B are an example of a cross-sectional view and a plan view of a semiconductor package 100 according to the fourth embodiment of the present technology. In the drawing, "a" indicates a cross-sectional view of the semiconductor package 100, and "b" indicates a top view of the transparent member 110.

[0134] As illustrated in FIG. 11A, the semiconductor package 100 of the fourth embodiment differs from the first embodiment in that a dam 124 is formed on the upper surface of the transparent member 110. A rectangular area on the upper surface of the transparent member 110 directly above the imaging unit 210 is set as a light receiving area.

[0135] As shown in the diagram at b, the dam 124 is formed around the light-receiving region using a photosensitive resin. The area surrounded by the dotted line in the diagram at b indicates the light-receiving region, and the light gray area indicates the dam 124. A portion of the sealing resin 130 covers the area between the outer periphery of the transparent member 110 and the dam 124, and this portion functions as a light-shielding film. The thick line in the diagram at b indicates the outer periphery of the transparent member 110.

[0136] For example, in the X-axis direction, the coordinate of the left end of the transparent member is X10, and the coordinate of its right end is X13. Furthermore, the coordinate of the left end of the imaging unit 210 is X11, and the coordinate of its right end is X12. The dam 124 is formed in the area from coordinate X10 to X11 and the area from coordinate X12 to X13. The sealing resin 130 covers the areas on the top surface of the transparent member 110 from coordinate X10 to dam 124 and from coordinate X13 to dam 124, thereby blocking light.

[0137] As illustrated in the same figure, by shading the area near the outer periphery of the transparent member 110 with sealing resin 130, it is possible to prevent flare, which occurs when stray light reflected by members other than the semiconductor chip 200 at the edge of the field of view enters the semiconductor chip 200.

[0138] Here, a configuration in which dam 124 is not formed on the upper surface of transparent member 110 will be considered as a third comparative example.

[0139] 27 is an example of a cross-sectional view of a semiconductor package in Comparative Example 3. In this third comparative example, when forming the sealing resin 130, the sealing resin 130 may protrude into the light receiving region, causing vignetting.

[0140] 26, the dam 124 is formed around the light receiving region, which prevents the sealing resin 130 from spilling out onto the light receiving region, thereby suppressing vignetting.

[0141] 28 is a diagram for explaining a manufacturing method of a semiconductor package 100 according to the fourth embodiment of the present technology. The manufacturing system manufactures a plurality of semiconductor chips 200 as illustrated in FIG. 28 a, and die-bonds them to an interposer 150 as illustrated in FIG. 28 b.

[0142] Then, as illustrated in c in the figure, the manufacturing system electrically connects each of the semiconductor chips 200 to the interposer 150. As illustrated in d in the figure, the manufacturing system places a transparent member 110 having photosensitive ribs 121 formed on its lower surface on the upper surface of the semiconductor chip 200, and forms a dam 124 on the upper surface of the transparent member 110 using photosensitive resin.

[0143] Then, as illustrated in e in the figure, the manufacturing system seals the transparent member 110 with sealing resin 130. At this time, part of the sealing resin 130 covers the vicinity of the outer periphery of the transparent member 110, blocking light.

[0144] The manufacturing system attaches each of the solder balls 142 to the underside of the interposer 150 as illustrated at f in the figure, and separates the solder balls 142 into individual pieces as illustrated at g in the figure.

[0145] The second and third embodiments can also be applied to the fourth embodiment.

[0146] As described above, according to the fourth embodiment of the present technology, the dam 124 is formed around the light receiving area on the upper surface of the transparent member 110, so that when the sealing resin 130 is used to block light, the resin can be prevented from spilling out onto the light receiving area.

[0147] [Variations] In the above-described fourth embodiment, the light-shielding film is formed by the sealing resin 130, but the light-shielding film can also be formed by the mold resin 160. The semiconductor package 100 in this modification of the fourth embodiment differs from the fourth embodiment in that the light-shielding film is formed by the mold resin 160.

[0148] 29 is an example of a cross-sectional view of a semiconductor package 100 according to a modification of the fourth embodiment of the present technology. The semiconductor package 100 according to the modification of the fourth embodiment differs from the fourth embodiment in that a molding resin 160 is further formed.

[0149] In a modification of the fourth embodiment, sealing resin 130 does not cover the upper surface of transparent member 110. Instead, a portion of molding resin 160 covers the area between the outer periphery of transparent member 110 and dam 124, and this portion functions as a light-shielding film.

[0150] As described above, according to the modified example of the fourth embodiment of the present technology, the dam 124 is formed around the light receiving area on the upper surface of the transparent member 110, so that when the molded resin 160 is used to block light, the resin can be prevented from spilling out onto the light receiving area.

[0151] Note that the above-described embodiment shows an example for realizing the present technology, and the matters in the embodiment and the matters specifying the invention in the claims correspond to each other. Similarly, the matters specifying the invention in the claims and the matters in the embodiment of the present technology having the same name correspond to each other. However, the present technology is not limited to the embodiment, and can be realized by applying various modifications to the embodiment within the scope of the gist thereof.

[0152] The effects described in this specification are merely examples and are not limiting, and other effects may also be obtained.

[0153] The present technology can also be configured as follows. (1) a transparent member; a semiconductor chip having pixels arranged on a part of the chip plane; a photosensitive rib made of photosensitive resin and arranged between the transparent member and an area of ​​the chip plane that does not correspond to the pixel; an interposer electrically connected to the semiconductor chip; A semiconductor package comprising: (2) The semiconductor device further includes an adhesive resin for bonding the photosensitive rib and the semiconductor chip. The semiconductor package according to (1) above. (3) Further comprising a stopper; the semiconductor chip is disposed between the transparent member and the interposer, the photosensitive rib is formed around a predetermined region of the lower surface of the transparent member that faces the pixel, with a direction from the interposer to the transparent member being defined as an upward direction; The stopper is formed between the predetermined area of ​​the lower surface and the photosensitive rib. The semiconductor package according to (2) above. (4) The photosensitive rib is formed in close contact with both the transparent member and the semiconductor chip. The semiconductor package according to (1) above. (5) The transparent member is a lens. The semiconductor package according to any one of (1) to (4). (6) The cross-sectional shape of the photosensitive rib is tapered. The semiconductor package according to any one of (1) to (5). (7) The semiconductor chip is A silicon substrate; an organic film formed on a portion of the surface of the silicon substrate; Equipped with The photosensitive rib is disposed between the transparent member and an area of ​​the substrate surface where the organic film is not formed. The semiconductor package according to any one of (1) to (6). (8) The semiconductor chip has an opening, The distance from the edge of the opening to the organic film is not less than 200 micrometers. The semiconductor package according to (7) above. (9) The shape of the inner wall of the photosensitive rib, with the direction toward the pixel as the inward direction, is a shape of a plurality of connected triangular prisms. The semiconductor package according to any one of (1) to (8). (10) The shape of the outer wall of the photosensitive rib relative to the inner wall is a shape of a plurality of connected triangular prisms. The semiconductor package according to (9) above. (11) Dams and a sealing resin that seals the semiconductor chip, the transparent member, and the interposer; Further comprising: the semiconductor chip is disposed between the transparent member and the interposer, The direction from the interposer to the transparent member is defined as the upward direction, and the dam is formed on the upper surface of the transparent member around the light receiving region directly above the pixel. The semiconductor package according to any one of (1) to (10) above. (12) A portion of the sealing resin shields a region of the upper surface of the transparent member between the outer periphery of the transparent member and the dam from light. The semiconductor package according to (11) above. (13) The transparent member further includes a molding resin that shields a region of the upper surface of the transparent member between the outer periphery of the transparent member and the dam. The semiconductor package according to (11) above. (14) a connection procedure for electrically connecting a semiconductor chip having pixels arranged on a part of a predetermined chip plane to an interposer; a photosensitive rib forming step of forming a photosensitive resin as a photosensitive rib in an area of ​​one of both surfaces of the transparent member that does not face the pixels; a placing step of placing the transparent member on which the photosensitive ribs are formed on the semiconductor chip; A method for manufacturing a semiconductor package comprising: (15) a coating step of coating a resist on the semiconductor chip, the semiconductor chip including a silicon substrate and an organic film formed on a surface of the silicon substrate; a resist removal step of removing a portion of the resist; an organic film removal step of removing a portion of the organic film on which the resist is not applied; Further comprising: The connecting step is performed after the organic film removing step. The method for manufacturing a semiconductor package according to (14) above. [Explanation of symbols]

[0154] 100 Semiconductor Packages 110 Transparent parts 111 Opening area 121 Photosensitive Rib 122 Adhesive resin 123 Stopper 124 Dam 130 Sealing resin 141 Wire 142 Solder ball 143 Die attach material 150 Interposer 160 Molding resin 200 semiconductor chips 210 Imaging unit 211 pixels 220 Inorganic membrane 230 Organic film 240 silicon substrate 241 Pad 300 Resist

Claims

1. A transparent member; a semiconductor chip having pixels arranged on a part of the chip plane; a photosensitive rib made of photosensitive resin and arranged between the transparent member and an area of ​​the chip plane that does not correspond to the pixel; an interposer electrically connected to the semiconductor chip; an adhesive resin that bonds the photosensitive rib and the semiconductor chip; Stopper and Equipped with the semiconductor chip is disposed between the transparent member and the interposer, the photosensitive rib is formed around a predetermined region of the lower surface of the transparent member that faces the pixel, with a direction from the interposer to the transparent member being defined as an upward direction; The stopper is formed between the predetermined area of ​​the lower surface and the photosensitive rib. Semiconductor package.

2. The transparent member is a lens.

2. The semiconductor package according to claim 1.

3. The semiconductor chip comprises: A silicon substrate; an organic film formed on a portion of the surface of the silicon substrate; Equipped with The photosensitive rib is disposed between the transparent member and an area of ​​the substrate surface where the organic film is not formed.

2. The semiconductor package according to claim 1.

4. the semiconductor chip has an opening; The distance from the edge of the opening to the organic film is not less than 200 micrometers.

4. The semiconductor package according to claim 3.

5. A transparent member; a semiconductor chip having pixels arranged on a part of the chip plane; a photosensitive rib made of photosensitive resin and arranged between the transparent member and an area of ​​the chip plane that does not correspond to the pixel; an interposer electrically connected to the semiconductor chip; an adhesive resin that bonds the photosensitive rib and the semiconductor chip; Equipped with the shape of an inner wall of the photosensitive rib is a shape of a plurality of connected triangular prisms, with a direction toward the pixels being an inward direction; The shape of the outer wall of the photosensitive rib relative to the inner wall is a shape of a plurality of connected triangular prisms. Semiconductor package.

6. The dam and a sealing resin that seals the semiconductor chip, the transparent member, and the interposer; Further comprising: the semiconductor chip is disposed between the transparent member and the interposer, The direction from the interposer to the transparent member is defined as the upward direction, and the dam is formed on the upper surface of the transparent member around the light receiving region directly above the pixel.

6. The semiconductor package according to claim 5.

7. A portion of the sealing resin shields a region of the upper surface of the transparent member between the outer periphery of the transparent member and the dam from light.

7. The semiconductor package according to claim 6.

8. The transparent member further includes a molding resin that shields a region of the upper surface of the transparent member between the outer periphery of the transparent member and the dam.

7. The semiconductor package according to claim 6.

9. a connection step for electrically connecting a semiconductor chip having pixels arranged on a part of a predetermined chip plane to an interposer; a photosensitive rib forming step of forming a photosensitive resin as a photosensitive rib in an area of ​​one of both surfaces of the transparent member that does not face the pixels; a mounting step of adhering the transparent member on which the photosensitive ribs are formed to the semiconductor chip with an adhesive resin; a coating step of coating a resist on the semiconductor chip, the semiconductor chip including a silicon substrate and an organic film formed on a surface of the silicon substrate; a resist removal step of removing a portion of the resist; an organic film removal step of removing a portion of the organic film on which the resist is not applied; Equipped with The connecting step is performed after the organic film removing step. A method for manufacturing semiconductor packages.

Images