Ceramic heater

Abstract

Provided is a ceramic heater which is capable of achieving both power consumption reduction through increased resistance, and in-plane temperature uniformity of a ceramic plate. The ceramic heater comprises: a ceramic plate including a central part that is in a radius of 60 mm or less from the center of the ceramic plate, an intermediate part that is in a radius of 80-120 mm from the center, and an outer circumferential part that is in a radius of 130 mm or more from the center; and resistance heating bodies that are embedded in the central part, the intermediate part, and the outer circumferential part of the ceramic plate. The resistance heating bodies are configured such that the volume resistivity of the resistance heating bodies gradually increases as the distance from the center of the ceramic plate becomes longer. When the volume resistivity of the resistance heating bodies on the outer edge of the central part is 100%, the rate of the volume resistivity of the resistance heating bodies in the intermediate part is within the range of 102-120%, and the rate of the volume resistivity of the resistance heating bodies in the outer circumferential part is within the range of 108-139%.

Description

[Technical Field]

[0001] The present disclosure relates to ceramic heaters. [Background technology]

[0002] In film deposition equipment for semiconductor manufacturing processes, ceramic heaters are used as support stages for uniformly controlling the temperature of wafers. A widely used ceramic heater includes a ceramic plate on which the wafer is placed and a cylindrical ceramic shaft attached to the ceramic plate. Multi-zone ceramic heaters, which have multiple heating zones, are also known as ceramic heaters.

[0003] Patent Document 1 (JP-A-11-339 93 No. 9 discloses a ceramic heater comprising a ceramic body in which a resistance heating element having a substantially concentric or spiral heating pattern is embedded, and a ceramic cylindrical support body joined to the underside of the ceramic body. In this ceramic heater, when the area of ​​the region of the heating pattern located inside the cylindrical support body is S1, the resistance value of the resistance heating element in the region located inside the cylindrical support body is R1, the area of ​​the region of the heating pattern located outside the cylindrical support body is S2, and the resistance value of the resistance heating element in the region located outside the cylindrical support body is R2, the ratio of R1 / S1 is larger than the ratio of R2 / S2 by 3 to 60%.

[0004] Patent Document 2 (JP Patent Publication No. 8-274147) discloses a wafer holding device in which first to n-th heating resistors (n≧2) that are sequentially energized are embedded in a ceramic base that forms the wafer holding surface, and the ratio of the resistance value of the (m-1)th heating resistor to the m-th heating resistor (m=2 to n) is 1.5 to 4.

[0005] Patent Document 3 (JP 2019-194939 A) discloses a ceramic heater including a disk-shaped ceramic substrate, an electrostatic attraction electrode or a high-frequency generating electrode embedded in the ceramic substrate, a first heating resistor embedded in the ceramic substrate below the electrode, and a second heating resistor embedded in the ceramic substrate below the first heating resistor. The first heating resistor includes a planar first resistor portion located in an inner region of an imaginary circle defined by the outermost contour of the electrode, a linear or strip-shaped second resistor portion located within the inner region, radially outward of the first resistor portion, and extending circumferentially of the ceramic substrate, and a connecting portion connecting the first resistor portion and the second resistor portion. The second heating resistor is located inside the imaginary circle defined by the innermost contour of the second resistor portion.

[0006] Patent Document 4 (WO2020 / 153218) discloses a ceramic heater comprising a ceramic plate having a circular inner zone and an annular outer zone, an inner resistance heating element made of a high-melting point metal provided in the inner zone, and an outer resistance heating element provided in the outer zone, at least the surface of which is made of metal carbide. [Prior art documents] [Patent documents]

[0007] [Patent Document 1] Japanese Patent Application Publication No. 11-339939 [Patent Document 2] Japanese Patent Application Publication No. 8-274147 [Patent Document 3] Japanese Patent Application Publication No. 2019-194939 [Patent Document 4] WO2020 / 153218 Summary of the Invention

[0008] The miniaturization and multi-layering of semiconductors are progressing at an accelerating pace, resulting in higher temperatures and longer processing times in semiconductor manufacturing processes. As a result, the power consumption of manufacturing equipment is increasing. At the same time, addressing the Sustainable Development Goals (SDGs) has become inevitable, and there is a demand for higher voltage power supplies to reduce power losses throughout semiconductor manufacturing factories. This is because higher voltage power supplies can reduce the amount of current, thereby reducing power losses. As power supply voltages increase, each component that makes up manufacturing equipment must also be compatible with higher voltages. Furthermore, there is an increasing demand for temperature uniformity (heat uniformity) in ceramic heaters. For this reason, achieving both high voltage compatibility and temperature uniformity in ceramic heaters is an urgent issue.

[0009] In fact, the voltage of power supplies in semiconductor manufacturing plants has risen from 208V to 440V or higher in the future. One possible solution to this increase in voltage is to increase the resistance of the resistance heating element embedded in the ceramic heater and reduce the current flowing through the ceramic heater. This is because, when considering the entire semiconductor manufacturing plant, reducing the total current can reduce power loss. In conventional ceramic heaters, the resistance of three-dimensional coil-type resistance heating elements has been increased by thinning the wire or increasing the winding diameter, two-dimensional resistance heating elements such as linear zigzag structures by thinning the wire or increasing the amplitude, and printed pattern-type resistance heating elements by reducing the thickness or narrowing the printing width. However, while conventional methods for increasing resistance can achieve high resistance, they often result in deformation or deterioration of the resistance heating element, making it difficult to achieve uniform temperature distribution.

[0010] The inventors have now discovered that in a ceramic heater having a resistance heating element embedded in a central portion, intermediate portion, and outer periphery defined radially from the center of a ceramic plate, by making the volume resistivity of the resistance heating element gradually increase with increasing distance from the center of the ceramic plate, and by adjusting the ratios of the volume resistivity of the resistance heating element in the intermediate portion and outer periphery to the volume resistivity of the resistance heating element at the outer edge of the central portion within respective predetermined ranges, it is possible to achieve both reduced power consumption due to increased resistance and temperature uniformity across the surface of the ceramic plate.

[0011] SUMMARY OF THE INVENTION It is therefore an object of the present invention to provide a ceramic heater that can achieve both reduced power consumption due to increased resistance and uniform temperature across the ceramic plate.

[0012] According to the present disclosure, the following aspects are provided. [Aspect 1] a circular ceramic plate having a first surface on which a wafer is placed and a second surface opposite to the first surface, the ceramic plate including, when viewed from above, a central portion defined as a circular region having a radius of 60 mm or less from the center of the ceramic plate, an intermediate portion defined as an annular region having a radius of 80 to 120 mm from the center, and an outer peripheral portion defined as an annular region having a radius of 130 mm or more from the center; a resistance heating element embedded in the central portion, the intermediate portion, and the outer periphery of the ceramic plate; A ceramic heater comprising: the resistive heating element is configured such that the volume resistivity of the resistive heating element gradually increases with increasing distance from the center of the ceramic plate; A ceramic heater, wherein, when the volume resistivity of the resistance heating element at the outer edge of the central portion is taken as 100%, the volume resistivity ratio of the resistance heating element at the intermediate portion is within a range of 102 to 120%, and the volume resistivity ratio of the resistance heating element at the outer periphery is within a range of 108 to 139%. [Aspect 2] 2. The ceramic heater according to claim 1, wherein the resistance heating element is in the form of at least one selected from the group consisting of a coil, a linear zigzag structure, a printed pattern, a foil, and a mesh. [Aspect 3] the resistance heating element embedded in the central portion, the resistance heating element embedded in the intermediate portion, and the resistance heating element embedded in the outer periphery are each arranged in a single stroke when viewed from above, and The ceramic heater according to aspect 1 or 2, wherein the resistance heating element embedded in the central portion, the resistance heating element embedded in the intermediate portion, and the resistance heating element embedded in the outer periphery are made of the same material. [Aspect 4] the ceramic heater includes at least two of the resistance heating elements, one of the resistance heating elements embedded in the central portion, the intermediate portion, and the outer peripheral portion forms an outer zone control heater circuit as a single continuous resistance heating element; the outer zones of the central portion, the intermediate portion and the periphery; control heater circuit The ceramic heater according to aspect 3, wherein the other of the resistance heating elements buried at a depth different from the first resistance heating element forms an inner zone control heater circuit independent of the outer zone control heater circuit as a single continuous resistance heating element. [Aspect 5] the ceramic heater includes at least two of the resistance heating elements, the resistance heating element embedded in the outer peripheral portion or the outer peripheral portion and the intermediate portion forms an outer zone control heater circuit as a single continuous resistance heating element; A ceramic heater according to aspect 3, wherein the resistance heating element embedded in the central portion or the central portion and the intermediate portion constitutes, as a single continuous resistance heating element, an inner zone controlled heater circuit independent of an outer zone controlled heater circuit. [Aspect 6] A ceramic heater according to any one of aspects 1 to 5, wherein the ceramic plate comprises aluminum nitride or aluminum oxide. [Aspect 7] the ceramic plate includes aluminum nitride, and the ceramic plate has an upper ceramic plate providing the first surface and a lower ceramic plate providing the second surface, and the aluminum nitride constituting the upper ceramic plate has a melting point of 1.0×10 at 550° C. 8 7. The ceramic heater of embodiment 6, having a volume resistivity greater than Ω·cm. [Aspect 8] The ceramic heater according to any one of aspects 1 to 7, further including an internal electrode, which is an RF electrode and / or an ESC electrode, in the ceramic plate. [Aspect 9] The ceramic heater according to any one of aspects 1 to 8, further comprising a cylindrical ceramic shaft concentrically attached to the second surface of the ceramic plate and having an internal space. [Brief explanation of the drawings]

[0013] [Figure 1] 1 is a top view schematically showing an example of a ceramic heater according to the present invention. [Figure 2] FIG. 2 is a perspective cross-sectional view schematically showing the cross-sectional structure of the ceramic heater shown in FIG. [Figure 3] FIG. 2 is a top view schematically showing another example of a ceramic heater according to the present invention. [Figure 4] This is a schematic perspective cross-sectional view of the cross-sectional structure of the ceramic heater shown in Figure 3. For convenience of explanation, the jumper 22 is drawn slightly lower than its actual position in order to clearly show the configurations of the inner zone control heater circuit 14a and the jumper 22, which are actually located at the same height. [Figure 5] 1 is a schematic diagram conceptually showing the patterns and heat generation densities of the inner zone control heater circuits employed in Examples 1 to 5. In this diagram, the thickness of the lines represents the heat generation density. [Figure 6] 1 is a schematic diagram conceptually showing the patterns and heat generation densities of the outer zone control heater circuits employed in Examples 1 to 5. In this diagram, the thickness of the lines represents the heat generation density. [Figure 7] 1 is a graph showing the distribution of volume resistivity ratios relative to the radial position of the heating resistor measured in Examples 1 to 5. DETAILED DESCRIPTION OF THE INVENTION

[0014] The ceramic heater according to the present invention is a ceramic platform for supporting a wafer in a semiconductor manufacturing device. Typically, the ceramic heater according to the present invention can be a ceramic heater for a semiconductor film formation device. Typical examples of film formation devices include CVD (chemical vapor deposition) devices (e.g., thermal CVD devices, plasma CVD devices, photo CVD devices, and MOCVD devices) and PVD (physical vapor deposition) devices.

[0015] 1 and 2 show an example of a two-zone ceramic heater as one embodiment of a ceramic heater. The ceramic heater 10 shown in FIGS. 1 and 2 includes a ceramic plate 12 and a resistance heating element 14. The ceramic plate 12 is disk-shaped and has a first surface 12a on which a wafer W is placed and a second surface 12b opposite the first surface 12a. When viewed from above, the ceramic plate 12 includes a central portion 12c, an intermediate portion 12d, and an outer peripheral portion 12e. The central portion 12c is defined as a circular region having a radius of 60 mm or less from the center of the ceramic plate 12. The intermediate portion 12d is defined as an annular region having a radius of 80 to 120 mm from the center of the ceramic plate 12. The outer peripheral portion 12e is defined as an annular region having a radius of 130 mm or more from the center of the ceramic plate 12. The resistance heating element 14 is embedded in the central portion 12c, the intermediate portion 12d, and the outer peripheral portion 12e of the ceramic plate 12. The resistance heating element 14 is configured so that the volume resistivity of the resistance heating element 14 gradually increases with increasing distance from the center of the ceramic plate 12. When the volume resistivity of the resistance heating element 14 at the outer edge of the central portion 12c is taken as 100%, the volume resistivity ratio of the resistance heating element 14 at the intermediate portion 12d is within a range of 102 to 120%, and the volume resistivity ratio of the resistance heating element 14 at the outer periphery 12e is within a range of 108 to 139%. In this way, in the ceramic heater 10 having the resistance heating element 14 embedded in the central portion 12c, intermediate portion 12d, and outer peripheral portion 12e, which are defined in the radial direction from the center of the ceramic plate 12, the volume resistivity of the resistance heating element 14 is gradually increased with increasing distance from the center of the ceramic plate 12, and the ratios of the volume resistivity of the resistance heating element 14 in the intermediate portion 12d and outer peripheral portion 12e to the volume resistivity of the resistance heating element 14 at the outer edge of the central portion 12c are adjusted to be within respective predetermined ranges, thereby making it possible to achieve both reduced power consumption due to higher resistance and temperature uniformity within the surface of the ceramic plate 12.

[0016] As mentioned above, achieving both high-voltage compatibility and temperature uniformity in ceramic heaters is an urgent issue. For example, the voltage of power supplies in semiconductor manufacturing plants has risen from 208V to 440V or higher in the future. One possible solution to this increase in voltage is to increase the resistance of the resistive heating element embedded in the ceramic heater and reduce the current flowing through it. In conventional ceramic heaters, the resistance of the resistive heating element has been increased by thinning the wire or increasing the winding diameter for three-dimensional coil-type resistive heating elements, thinning the wire or increasing the amplitude for two-dimensional resistive heating elements such as linear zigzag structures, and thinning the film or narrowing the printing width for printed pattern-type resistive heating elements. However, while thinning the wire or increasing the winding diameter for three-dimensional coil-type resistive heating elements doubles the resistance, achieving temperature uniformity becomes more difficult due to the increased susceptibility to deformation of the coil shape and pattern during manufacturing. In two-dimensional resistance heating elements such as those with a linear zigzag structure, the resistance value doubles when the wire is made thinner or the amplitude is increased, but as mentioned above, deformation during manufacturing deteriorates the temperature uniformity. In printed pattern resistance heating elements, the resistance value doubles when the thickness is reduced or the printing width is narrowed, but this makes the resistance heating element more susceptible to deterioration during manufacturing and, as mentioned above, makes it more difficult to achieve temperature uniformity. In this way, while conventional methods for increasing resistance can achieve high resistance, they do not achieve the temperature uniformity of ceramic heaters due to deformation and deterioration of the resistance heating element.

[0017] Therefore, we reexamined the firing method used to manufacture the ceramic plate 12 and significantly modified the firing process, from heating through the maximum temperature and then cooling down. This successfully suppressed deformation of the resistance heating element 14 and increased the overall volume resistivity of the resistance heating element 14 along a desirable profile. These efforts also improved temperature uniformity. This enabled us to increase the volume resistivity of the resistance heating element 14 so that it gradually increases with increasing distance from the center of the ceramic plate 12 (i.e., toward the periphery). This significantly increased the resistance of the resistance heating element 14 compared to conventional methods, resulting in a higher resistance for the resistance heating element 14 located near the periphery compared to the resistance heating element 14 located near the center of the ceramic plate 12. This also reduced the current, which often flows high near the periphery of the ceramic plate 12 due to the equipment configuration and process conditions. This resulted in both a reduction in current due to the increased resistance (which reduces power consumption) and improved temperature uniformity across the ceramic plate 12. It can be said that increasing the volume resistivity of the entire resistance heating element 14 would be more effective in reducing the current value. However, trying to achieve this would double the firing time and the power consumption during firing, which would be counterproductive. Furthermore, doubling the firing time could increase deformation of the resistance heating element. Therefore, we concluded that the optimal method for achieving both power consumption reduction and temperature uniformity is to increase the volume resistivity of the resistance heating elements 14 located near the periphery compared to the volume resistivity of the resistance heating elements 14 located near the center of the ceramic plate 12, which led to the completion of this invention.

[0018] The ceramic plate 12 preferably contains aluminum nitride or aluminum oxide, and more preferably aluminum nitride, in its main portion (i.e., the ceramic substrate) other than the embedded members such as the resistance heating element 14, from the viewpoints of excellent thermal conductivity, high electrical insulation, and thermal expansion characteristics similar to those of silicon. In a preferred embodiment, the ceramic plate 12 contains aluminum nitride, and has an upper ceramic plate that provides the first surface 12a and a lower ceramic plate that provides the second surface 12b. In this embodiment, the aluminum nitride constituting the upper ceramic plate has a thermal expansion coefficient of 1.0×10 at 550°C. 8 It is preferable that the volume resistivity is greater than Ω·cm, and more preferably 1.0×10 9 ~1.0×10 11 Ω·cm.

[0019] The ceramic plate 12 is disk-shaped. However, the planar shape of the disk-shaped ceramic plate 12 does not need to be a perfect circle; for example, it may be an incomplete circle with a portion missing, such as an orientation flat. The diameter of the ceramic plate 12 for a 300 mm silicon wafer is typically 320 to 380 mm, for example, about 340 mm. The thickness of the ceramic plate 12 is typically 10 to 25 mm, for example, about 20 mm.

[0020] The resistance heating element 14 is embedded in the central portion 12c, intermediate portion 12d, and outer peripheral portion 12e of the ceramic plate 12. As described above, the central portion 12c is defined as a circular region having a radius of 60 mm or less from the center of the ceramic plate 12. The intermediate portion 12d is defined as an annular region having a radius of 80 to 120 mm from the center of the ceramic plate 12. The outer peripheral portion 12e is defined as an annular region having a radius of 130 mm or more from the center of the ceramic plate 12. Therefore, a 20 mm-wide annular region exists between the central portion 12c and the intermediate portion 12d, while a 10 mm-wide annular region exists between the intermediate portion 12d and the outer peripheral portion 12e. The annular regions that do not belong to any of the central portion 12c, intermediate portion 12d, and outer peripheral portion 12e are simply not taken into account when calculating the volume resistivity ratio of the resistance heating element 14; however, the resistance heating element 14 may also exist in the annular region. That is, the resistance heating element 14 may be embedded continuously throughout the central portion 12c, intermediate portion 12d, and outer periphery 12e of the ceramic plate 12 (including the annular region therebetween), as shown in Figures 1 and 2. Alternatively, as shown in Figures 3 and 4, the resistance heating element 14 may be a combination of a resistance heating element 14 (inner zone controlled heater circuit 14a) embedded continuously throughout the central portion 12c and intermediate portion 12d of the ceramic plate 12 (including the annular region therebetween) and another resistance heating element 14 (outer zone controlled heater circuit 14b) embedded in the outer periphery 12e of the ceramic plate 12.

[0021] The resistance heating element 14 is configured so that its volume resistivity gradually increases with increasing distance from the center of the ceramic plate 12. Specifically, when the volume resistivity of the resistance heating element 14 at the outer edge of the central portion 12c is taken as 100%, the ratio of the volume resistivity of the resistance heating element 14 at the intermediate portion 12d is within a range of 102 to 120%, preferably 103 to 118%, and more preferably 105 to 115%. Furthermore, the ratio of the volume resistivity of the resistance heating element 14 at the outer peripheral portion 12e is within a range of 108 to 139%, preferably 112 to 135%, and more preferably 116 to 130%. Within these ranges, power consumption reduction due to increased resistance and temperature uniformity within the surface of the ceramic plate 12 can be more effectively achieved.

[0022] The resistance heating element 14 is preferably in the form of at least one selected from the group consisting of a coil, a linear zigzag structure, a printed pattern, a foil, and a mesh.

[0023] The resistance heating element 14 embedded in the central portion 12c, the resistance heating element 14 embedded in the intermediate portion 12d, and the resistance heating element 14 embedded in the outer peripheral portion 12e are preferably arranged in a single stroke when viewed from above. The single stroke shape may be any of various known shapes, such as a spiral shape. The resistance heating element 14 embedded in the central portion 12c, the resistance heating element 14 embedded in the intermediate portion 12d, and / or the resistance heating element 14 embedded in the outer peripheral portion 12e may be continuous or separated from one another. Therefore, the resistance heating element 14 may be a one-zone heater circuit that is continuously arranged across the central portion 12c, the intermediate portion 12d, and the outer peripheral portion 12e, or a multi-zone heater circuit that is divided into two or more zones. For example, as shown in Figures 1 and 2, they may be continuously arranged in a single stroke across the central portion 12c, intermediate portion 12d, and outer peripheral portion 12e, or as shown in Figures 3 and 4, they may be arranged in a single stroke in the inner zone Z1 to form an inner zone control heater circuit 14a and in a single stroke in the outer zone Z2 to form an outer zone control heater circuit 14b. In either case, in the ceramic heater 10, the resistance heating element 14 embedded in the central portion 12c, the resistance heating element 14 embedded in the intermediate portion 12d, and the resistance heating element 14 embedded in the outer peripheral portion 12e are preferably made of the same material. This is because by reviewing the firing method used to manufacture the ceramic plate 12, it is possible to desirably control the resistance and volume resistivity of the resistance heating elements 14 even when they are made of the same material. In this sense, even if the material is the same, the volume resistivity will differ depending on the position, such as the central portion 12c, the intermediate portion 12d, and the outer peripheral portion 12e, after firing (for example, depending on the degree of carbonization), and therefore, in this specification, the term "same material" means that the original material before firing is the same, regardless of any changes (for example, carbonization) or changes in volume resistivity due to firing (in this sense, it can also be called "essentially the same material").

[0024] As described above, the ceramic plate 12 may include an inner zone Z1 and an outer zone Z2 when viewed from above. The inner zone Z1 is defined as a circular region within a predetermined distance from the center of the ceramic plate 12, typically including the central portion 12c and, optionally, part or all of the intermediate portion 12d. The outer zone Z2 is defined as an annular region outside the inner zone Z1, typically including the outer periphery 12e and, optionally, part or all of the intermediate portion 12d. Therefore, the inner zone Z1 and the central portion 12c (or the region combining the central portion 12c and the intermediate portion 12d) do not necessarily coincide with each other, and the outer zone Z2 does not necessarily coincide with the outer periphery 12e (or the region combining the outer periphery 12e and the intermediate portion 12d). The outer zone Z2 may be composed of multiple outer subzones defined in an arcuate shape. The outer zone Z2 may have two or more concentric annular regions of different sizes that do not overlap each other. In this case, the outer zone Z2 has at least a first outer zone adjacent to the inner zone Z1 and a second outer zone located outside the first outer zone. If necessary, there may be a third or more outer zones outside the second outer zone.

[0025] 1 and 2, the ceramic heater 10 may include at least two overlapping resistance heating elements 14. In this embodiment, it is preferable that one of the resistance heating elements 14 embedded in the central portion 12c, the intermediate portion 12d, and the outer peripheral portion 12e constitutes, as a single continuous resistance heating element, an outer zone control heater circuit 14b for selectively or preferentially heating the outer zone Z2, and the other of the resistance heating elements 14 embedded in the central portion 12c, the intermediate portion 12d, and the outer peripheral portion 12e at a different depth from the outer zone control heater circuit 14b constitutes, as a single continuous resistance heating element, an inner zone control heater circuit 14a independent of the outer zone control heater circuit 14b for selectively or preferentially heating the inner zone Z1. In this embodiment, the inner zone control heater circuit 14a and the outer zone control heater circuit 14b are both disposed at different depths in the overlapping regions including the central portion 12c, the intermediate portion 12d, and the outer peripheral portion 12e, but the inner zone control heater circuit 14a may be configured to have a high resistance in the inner zone Z1 and a low resistance in the outer zone Z2 (for example, by changing the coil pitch in the case of a coil), thereby selectively heating the inner zone Z1. Similarly, the outer zone control heater circuit 14b may be configured to have a low resistance in the inner zone Z1 and a high resistance in the outer zone Z2 (for example, by changing the coil pitch in the case of a coil), thereby selectively heating the outer zone Z2.

[0026] 3 and 4, the ceramic heater 10 may include at least two resistance heating elements 14 in different regions. In this embodiment, the resistance heating element 14 embedded in the outer zone Z2 (typically the outer peripheral portion 12 e, or the outer peripheral portion 12 e and the intermediate portion 12 d) preferably constitutes, as a single continuous resistance heating element 14, an outer zone control heater circuit 14 b for selectively or preferentially heating the outer zone Z2, and the resistance heating element embedded in the inner zone Z1 (typically the central portion 12 c, or the central portion 12 c and the intermediate portion 12 d) preferably constitutes, as a single continuous resistance heating element 14, an inner zone control heater circuit 14 a for selectively or preferentially heating the inner zone Z1, which is independent of the outer zone control heater circuit 14 b.

[0027] In any of the embodiments shown in FIGS. 1 to 4, the inner zone control heater circuit 14a is embedded in the inner zone Z1 (and the outer zone Z2, if present) of the ceramic plate 12, parallel to the first surface 12a. A pair of first power supply terminals 18 for supplying power to the inner zone control heater circuit 14a is provided in the center of the inner zone Z1 of the ceramic plate 12. Preferably, the first power supply terminals 18 are connected to both ends of the inner zone control heater circuit 14a, respectively. There may be two or more pairs of first power supply terminals 18. The first power supply terminals 18 are rod-shaped, and the inner zone control heater circuit 14a is connected to a heater power supply (not shown) via the rod-shaped first power supply terminals 18.

[0028] In any of the embodiments shown in FIGS. 1 to 4, the outer zone control heater circuit 14b is embedded in the outer zone Z2 (and inner zone Z1, if present) of the ceramic plate 12 parallel to the first surface 12a. A pair of second power supply terminals 20 for supplying power to the outer zone control heater circuit 14b is provided in the center of the inner zone Z1 of the ceramic plate 12 (but at a position different from the first power supply terminals 18). The pair of second power supply terminals 20 may be directly connected to the outer zone control heater circuit 14b as shown in FIG. 2, or may be electrically connected to the outer zone control heater circuit 14b via a pair of jumpers 22 as shown in FIG. 4. Two or more pairs of second power supply terminals 20 may be present. The second power supply terminals 20 are rod-shaped, and the outer zone control heater circuit 14b is connected to a heater power supply (not shown) via the rod-shaped second power supply terminals 20 (via jumpers 22, if necessary).

[0029] The ceramic plate 12 may further include an RF electrode 30 and / or an ESC electrode as an internal electrode. In this case, the RF electrode 30 and / or the ESC electrode are preferably embedded in the ceramic plate 12 at a depth closer to the first surface 12a than the resistance heating element 14 and (the jumper 22, if present). The RF electrode enables film formation by a plasma CVD process when high frequency is applied to it. The ESC electrode is an abbreviation for electrostatic chuck (ESC) electrode and is also called an electrostatic electrode. When a voltage is applied to the ESC electrode from an external power supply, the ESC electrode chucks a wafer placed on the surface of the ceramic plate 12 by the Johnsen-Rahbek force. The ESC electrode is preferably a circular thin-layer electrode with a diameter slightly smaller than that of the ceramic plate 12. For example, the ESC electrode may be a mesh electrode formed by weaving thin metal wires into a net shape into a sheet. The ESC electrode may also be used as a plasma electrode. That is, by applying high frequency to the ESC electrode, the ESC electrode can also be used as an RF electrode, and film formation by a plasma CVD process can also be performed. An RF terminal 32 or an ESC terminal for feeding power is connected to the RF electrode 30 or the ESC electrode. The RF terminal 32 or the ESC terminal is rod-shaped, and the RF electrode 30 or the ESC electrode is connected to an external power supply (not shown) via the rod-shaped RF terminal 32 or the ESC terminal.

[0030] If desired, a ceramic shaft 28 may be concentrically attached to the second surface 12b of the ceramic plate 12. The ceramic shaft 28 is a cylindrical member with an internal space S and may have a configuration similar to that of ceramic shafts used in known ceramic susceptors or ceramic heaters. The internal space S is configured so that terminal rods such as the first power supply terminal 18, the second power supply terminal 20, and the RF terminal 32 pass through it. The ceramic shaft 28 is preferably made of the same ceramic material as the ceramic plate 12. Therefore, the ceramic shaft 28 preferably contains aluminum nitride or aluminum oxide, more preferably aluminum nitride. The upper end surface of the ceramic shaft 28 is preferably bonded to the second surface 12b of the ceramic plate 12 by solid-state bonding or diffusion bonding. The outer diameter of the ceramic shaft 28 is preferably 40 to 60 mm, for example, approximately 55 mm. The inner diameter of the ceramic shaft 28 (the diameter of the internal space S) is preferably 33 to 55 mm, for example, approximately 50 mm.

[0031] The ceramic plate 12 may have a thermocouple insertion hole 34. The thermocouple insertion hole 34 may be a vertical hole formed from the second surface 12b toward the first surface 12a. By inserting a thermocouple 36 into this thermocouple insertion hole 34, the temperature of the ceramic plate 12 or an internal electrode such as the RF electrode 30 can be measured. In this case, the thermocouple insertion hole 34 preferably reaches the internal electrode such as the RF electrode 30 or its vicinity.

[0032] The ceramic plate 12 having the unique volume resistivity ratio profile according to the present invention can be preferably manufactured, for example, as follows: First, aluminum nitride powder is press-molded to obtain a first aluminum nitride compact. Then, aluminum nitride powder and the inner zone control heater circuit 14a are arranged on the obtained first aluminum nitride compact and press-molded to obtain a second aluminum nitride compact having the inner zone control heater circuit 14a embedded therein. Then, aluminum nitride powder and the outer zone control heater circuit 14b are arranged on the obtained second aluminum nitride compact and press-molded to obtain a third aluminum nitride compact having the outer zone control heater circuit 14b further embedded therein. Then, aluminum nitride powder and an RF electrode 30 are arranged on the obtained third aluminum nitride compact and press-molded to obtain a fourth aluminum nitride compact having the RF electrode 30 further embedded therein. In this way, a pressed compact is obtained, consisting of an aluminum nitride powder compact in which the inner zone control heater circuit 14a, the outer zone control heater circuit 14b, and the RF electrode 30 are embedded, as shown in Figure 2. The process up to this point is the same as in the past and can be carried out according to known manufacturing methods. To obtain the ceramic plate 12 of the present invention, the obtained pressed compact (laminate) is preferably fired in a nitrogen atmosphere under the following specific firing conditions. ·Maximum temperature: 1760~1870℃ Maximum temperature hold time: 5-13 hours Number of times to change the heating rate to the maximum temperature: 2 to 7 times Heating rate: Changeable within the range of 40 to 60°C / min. Firing pressure: 60-120kg / cm 2

[0033] By undergoing such firing, the degree of carbonization of the resistance heating element 14 can be changed depending on the radial position, thereby achieving a desired profile of volume resistivity depending on the radial position, such as the central portion 12c, the intermediate portion 12d, and the outer peripheral portion 12e. [Example]

[0034] The present invention will be explained in more detail by the following examples, but the present invention is not limited to the following examples.

[0035] Examples 1-5 (1) Fabrication of a two-zone ceramic heater Using the components shown below, a two-zone ceramic heater 10 having the structure shown in FIGS. 1 and 2 was fabricated by a known procedure except for the firing conditions. <Component parts and their specifications> Ceramic plate 12: Disk-shaped aluminum nitride sintered body (diameter: 330 mm, thickness: 20 mm, volume resistivity at 550°C: 1.0 × 10 10 Ω·cm (measured on a coupon (test piece) cut out at 550°C) (with inner zone control heater circuit 14a, outer zone control heater circuit 14b, and RF electrode 30 embedded inside) Ceramic shaft 28: Cylindrical aluminum nitride sintered body (height: 170 mm, outer diameter: 45 mm, inner diameter: 36 mm) Inner zone control heater circuit 14a: a coil (material: molybdenum, wire diameter: 500 μm, outer diameter: 3.5 mm) embedded in the inner zone Z1 and outer zone Z2 (area with a diameter of 320 mm) of the ceramic plate 12 at a depth of 11.5 mm from the first surface 12a according to the circuit pattern shown in FIG. 5 (arranged so that the coil pitch becomes shorter (the coils become denser) as it approaches the center of the ceramic plate 12, as conceptually represented by the line thickness in the circuit pattern of FIG. 5); Outer zone control heater circuit 14b: Coils embedded in the inner zone Z1 and outer zone Z2 (area with a diameter of 320 mm) of ceramic plate 12 at a depth of 6.5 mm from first surface 12a according to the circuit pattern shown in FIG. 6 (material: molybdenum, wire diameter: 500 μm, outer diameter: 3.5 mm, arranged so that the coil pitch becomes shorter (the coils become denser) as they approach the outer periphery of ceramic plate 12, as conceptually represented by the line thickness in the circuit pattern of FIG. 6). RF electrode 30: a molybdenum electrode layer embedded at a depth of 1.0 mm from the first surface 12a of the ceramic plate 12. First power supply terminal 18: Two nickel terminal rods Second power supply terminal 20: Two terminal rods made of nickel RF terminal 32: One nickel terminal rod

[0036] The ceramic plate 12 having the inner zone control heater circuit 14a, the outer zone control heater circuit 14b, and the RF electrode 30 embedded therein was fabricated by the following procedure. First, aluminum nitride powder was press-molded to obtain a first aluminum nitride compact. The obtained first aluminum nitride compact was then placed with aluminum nitride powder and the inner zone control heater circuit 14a and press-molded to obtain a second aluminum nitride compact having the inner zone control heater circuit 14a embedded therein in the pattern shown in FIG. 5. The obtained second aluminum nitride compact was then placed with aluminum nitride powder and the outer zone control heater circuit 14b and press-molded to obtain a third aluminum nitride compact having the outer zone control heater circuit 14b embedded therein in the pattern shown in FIG. 6. The obtained third aluminum nitride compact was then placed with aluminum nitride powder and the RF electrode 30 and press-molded to obtain a fourth aluminum nitride compact having the RF electrode 30 embedded therein. In this way, a press-molded body was obtained consisting of an aluminum nitride powder compact in which the inner zone control heater circuit 14a, the outer zone control heater circuit 14b, and the RF electrode 30 were embedded, as shown in Fig. 2. The obtained press-molded body (laminate) was fired in a nitrogen atmosphere under the firing conditions shown in Table 1, to obtain a ceramic plate 12 in which the inner zone control heater circuit 14a, the outer zone control heater circuit 14b, and the RF electrode 30 were embedded.

[0037] (2) Evaluation The obtained two-zone ceramic heater was subjected to various evaluations.

[0038] <Volume resistivity ratio distribution> The volume resistivity of the resistance heating elements constituting the inner zone control heater circuit 14a and outer zone control heater circuit 14b embedded in the two-zone ceramic heater was measured at various positions in the radial direction from the center of the ceramic plate 12 as follows. The volume resistivity at each position was calculated relative to the volume resistivity at a position 60 mm from the center of the ceramic plate 12 (the outer edge of the central part), which was set at 100%, to determine the distribution of the volume resistivity ratio. The results are shown in Figure 7.

[0039] (Volume resistivity measurement) As in (1) above, a ceramic heater for measuring the volume resistivity of a resistance heating element was prepared and cut into six equal sections to obtain six test pieces with a fan-shaped planar shape. Terminals with a diameter of 2 mm were attached to the cross section of each resistance heating element exposed on the cut surface of each test piece, and the resistance value of each resistance heating element was measured at room temperature using a four-terminal tester. The length of each arc-shaped resistance heating element was determined from the radius at each measurement position, and the volume resistivity of each resistance heating element was calculated from the measured resistance value, the length of the resistance heating element, and the cross-sectional area of ​​the resistance heating element (calculated from a wire diameter of 0.5 mm). In this example, the ceramic heater has two layers, the inner zone control heater circuit 14a and the outer zone control heater circuit 14b, coexisting at the same radial position, so two volume resistivities were obtained at each radial position. In this way, 12 volume resistivities (= 6 × 2 layers) based on the six test pieces were obtained for each radial position, and their average was calculated to obtain the volume resistivity at each radial position of the ceramic heater.

[0040] <Resistance value> The resistance values ​​of the inner zone control heater circuit 14a and the outer zone control heater circuit 14b were measured at room temperature and 650°C. The resistance value of the inner zone control heater circuit 14a at room temperature was measured by connecting a four-terminal tester to the pair of first power feed terminals 18. Similarly, the resistance value of the outer zone control heater circuit 14b at room temperature was measured by connecting a four-terminal tester to the pair of second power feed terminals 20. The resistance value of the inner zone control heater circuit 14a at 650°C was calculated from the current and voltage values ​​applied to the inner zone control heater circuit 14a. Similarly, the resistance value of the outer zone control heater circuit 14b at 650°C was calculated from the current and voltage values ​​applied to the outer zone control heater circuit 14b. The results are shown in Table 1.

[0041] <Heat uniformity> A two-zone ceramic heater 10 was installed in the chamber of a film forming apparatus. The chamber was evacuated and N2 gas was introduced, setting the N2 gas pressure in the chamber to 5 Torr. The two-zone ceramic heater 10 was heated to a set temperature of 650°C by supplying power to the inner zone control heater circuit 14a and the outer zone control heater circuit 14b via the first power supply terminal 18 and the second power supply terminal 20. At this set temperature, the temperature distribution on the first surface 12a of the ceramic plate 12 was measured using an infrared camera. Based on the obtained temperature distribution map, the difference between the maximum and minimum temperatures within the surface (i.e., the maximum temperature difference within the surface) was calculated as an index of thermal uniformity, and the following criteria were used: - Rating A: Maximum temperature difference within the surface is less than 5.0°C - Rating B: Maximum temperature difference within the surface is 5.0℃ or more and less than 7.0℃ - Rating C: Maximum temperature difference within the surface is 7.0°C or more The results are shown in Table 1.

[0042] <Total current value and current value reduction effect> In the same manner as in the above-described temperature uniformity test, power was supplied from a power source (power supply voltage: 208 V) to the inner zone control heater circuit 14a and the outer zone control heater circuit 14b via the first power supply terminal 18 and the second power supply terminal 20, thereby heating the two-zone ceramic heater 10 to a set temperature of 650°C. The current values ​​flowing through the inner zone control heater circuit 14a and the outer zone control heater circuit 14b were measured, and the measured current values ​​were added together to calculate a total current value. The results are shown in Table 1. The total current value in Example 1 (Comparative Example) was used as a reference value, and the reduction in total current in Examples 2 to 5 relative to this reference value was shown in Table 1 as the reduction effect in total current value.

[0043] [Table 1]

[0044] The distribution of the volume resistivity ratio in the radial direction of the ceramic plate 12 shown in FIG. 7 reveals the following for each example.

[0045] Example 1 (comparison) is an example corresponding to the prior art, in which the volume resistivity ratio within the resistance heating element was constant. This means that there is a limit to how much higher the resistance value can be. Example 2 (comparison) improved the firing method, so the volume resistivity ratio increased as it approached the periphery. However, the volume resistivity ratio increased sharply only near the periphery, which was not a desirable profile. As a result, the thermal uniformity was poor, with a rating of C.

[0046] In contrast, Example 3 is an example in which optimal firing conditions were adopted, and a desirable volume resistivity profile was achieved in which the volume resistivity ratio had a linear gradient that increased as the volume resistivity ratio approached the periphery. Moreover, the outer zone control heater circuit 14b achieved a 22% increase in volume resistivity compared to the volume resistivity at a position 60 mm from the center of the ceramic plate 12 (the outer edge of the central part). Example 4 shows a profile in which the volume resistivity ratio increases as the volume resistivity ratio approaches the periphery, but the volume resistivity ratio is smaller than that of Example 3. This example showed a current reduction effect of about 1 A and good thermal uniformity (rating A). Example 5 has the highest volume resistivity among the examples in which the volume resistivity ratio had a linear gradient that increased as the volume resistivity ratio approached the periphery. This example showed acceptable thermal uniformity (rating B), and the power value The reduction effect was high at approximately 3A.

[0047] The volume resistivity profiles of Examples 1 to 5 were brought about solely by the differences in the firing conditions shown in Table 1. In other words, in the past, it was necessary to employ methods that impair thermal uniformity, such as narrowing the wire diameter of the heating element to increase the resistance value or increasing the heating density (i.e., packing more resistive heating elements into the same area), but the method of the present disclosure can avoid such factors that impair thermal uniformity. As a result, a desirable profile in which the volume resistivity of the resistive heating element increases linearly toward the periphery can be achieved, and the in-plane temperature difference can be reduced to a minimum of approximately 3°C (Example 3 ) (i.e., the uniform heating was improved). In addition, the total current value was reduced to a maximum of approximately 3A (e.g., 5 ) reduction, which is equivalent to 18A in a system with six times the heater.

Claims

1. a circular ceramic plate having a first surface on which a wafer is placed and a second surface opposite to the first surface, the ceramic plate including, when viewed from above, a central portion defined as a circular region having a radius of 60 mm or less from the center of the ceramic plate, an intermediate portion defined as an annular region having a radius of 80 to 120 mm from the center, and an outer peripheral portion defined as an annular region having a radius of 130 mm or more from the center; a resistance heating element embedded in the central portion, the intermediate portion, and the outer periphery of the ceramic plate; A ceramic heater comprising: the resistive heating element is configured such that the volume resistivity of the resistive heating element gradually increases with increasing distance from the center of the ceramic plate; a ceramic heater, wherein, when the volume resistivity of the resistance heating element at the outer edge of the central portion is taken as 100%, a ratio of the volume resistivity of the resistance heating element at the intermediate portion is within a range of 102 to 120%, and a ratio of the volume resistivity of the resistance heating element at the outer periphery is within a range of 108 to 139%.

2. 2. The ceramic heater according to claim 1, wherein the resistive heating element is in the form of at least one selected from the group consisting of a coil, a linear zigzag structure, a printed pattern, a foil, and a mesh.

3. the resistance heating element embedded in the central portion, the resistance heating element embedded in the intermediate portion, and the resistance heating element embedded in the outer periphery are each arranged in a single stroke when viewed from above, and 3. The ceramic heater according to claim 1, wherein the resistance heating element embedded in the central portion, the resistance heating element embedded in the intermediate portion, and the resistance heating element embedded in the outer periphery are made of the same material.

4. the ceramic heater includes at least two of the resistance heating elements, one of the resistance heating elements embedded in the central portion, the intermediate portion, and the outer peripheral portion forms an outer zone control heater circuit as a single continuous resistance heating element; 4. The ceramic heater according to claim 3, wherein the other of the resistance heating elements embedded at a depth different from that of the outer zone control heater circuit in the central portion, the intermediate portion, and the outer peripheral portion forms an inner zone control heater circuit as a single continuous resistance heating element, independent of the outer zone control heater circuit.

5. the ceramic heater includes at least two of the resistance heating elements, the resistance heating element embedded in the outer peripheral portion or the outer peripheral portion and the intermediate portion forms an outer zone control heater circuit as a single continuous resistance heating element; 4. The ceramic heater according to claim 3, wherein the resistance heating element embedded in the central portion or the central portion and the intermediate portion constitutes, as a single continuous resistance heating element, an inner zone controlled heater circuit independent from an outer zone controlled heater circuit.

6. The ceramic heater according to claim 1 or 2, wherein the ceramic plate comprises aluminum nitride or aluminum oxide.

7. the ceramic plate includes aluminum nitride, and the ceramic plate has an upper ceramic plate providing the first surface and a lower ceramic plate providing the second surface, and the aluminum nitride constituting the upper ceramic plate has a melting point of 1.0×10 at 550° C. ８ 7. The ceramic heater of claim 6, having a volume resistivity of greater than ohm-cm.

8. 3. The ceramic heater according to claim 1, further comprising an internal electrode, which is an RF electrode and / or an ESC electrode, within the ceramic plate.

9. 3. The ceramic heater according to claim 1, further comprising a cylindrical ceramic shaft concentrically attached to the second surface of the ceramic plate and having an internal space.

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