Devices incorporating IR signal transmission areas

Abstract

1. A semiconductor device having a plurality of layers deposited on a substrate and extending to at least one side defined by a transverse axis of the semiconductor device, the semiconductor device comprising: at least one EM radiation absorbing layer deposited on a first layer surface and including a discontinuous layer of at least one grain structure comprising a deposited material, wherein the at least one grain structure of the at least one EM radiation absorbing layer facilitates absorption of EM radiation in the semiconductor device in at least a portion of at least one of the visible and UV spectrums while substantially allowing transmission of EM radiation in the semiconductor device in at least a portion of at least one of the IR and NIR spectrums.

Description

[Technical Field]

[0001] (Related Applications) This application is a joint venture of U.S. Provisional Patent Application No. 63 / 081,707 (filed September 22, 2020). application ), No. 63 / 107,393 (filed on October 29, 2020) 、 No. 63 / 153,834 (filed on February 25, 2021) 、 No. 63 / 163,453 (filed on March 19, 2021), No. 63 / 181,100 (filed on April 28, 2021) , No. 63 / 122,421 (filed December 7, 2020), No. 63 / 141,857 (filed January 26, 2021), and No. 63 / 158,185 (filed March 8, 2021) No. 60 / 699,999, filed on Oct. 1, 2007, the contents of each of which are incorporated herein by reference in their entirety.

[0002] FIELD OF THE INVENTION The present disclosure relates to stacked semiconductor devices, and in particular to optoelectronic devices having first and second electrodes separated by a semiconductor layer and having a conductive deposition material deposited thereon, patterned using a nucleation-inhibiting coating (NIC) and / or a patterned coating that can act as and / or be a NIC and / or a NIC. [Background technology]

[0003] In an optoelectronic device, such as an organic light emitting diode (OLED), at least one semiconductor layer is disposed between a pair of electrodes, such as an anode and a cathode. The anode and cathode are electrically coupled to a power source and generate holes and electrons, respectively, that migrate toward each other through the at least one semiconductor layer. When a pair of holes and electrons combine, a photon can be emitted.

[0004] OLED display panels can include multiple (sub)pixels, each with an associated pair of electrodes. The various layers and coatings of such panels are typically formed by vacuum-based deposition processes.

[0005] In some applications, during the OLED manufacturing process, it may be desirable to provide each (sub)pixel of the panel with a conductive and / or electrode coating in a pattern across either or both of its sides and cross-section by selectively depositing at least one thin film of a conductive coating to form device features such as, but not limited to, electrodes and / or conductive elements electrically coupled thereto.

[0006] In some applications, it may be desirable to make the device substantially transparent while still allowing light to be emitted from the device. In some applications, the device may have a plurality of light emitting regions or subpixels arranged between them. signal Light emitting regions generally include layers, coatings, and / or components that attenuate or inhibit the transmission of external light through such regions, thus signal The transmissive areas are generally provided in non-emissive areas of the display panel, from which the presence of such layers, coatings, and / or components that attenuate or suppress the transmission of external light may be omitted.

[0007] One method for doing so involves the interposition of a fine metal mask (FMM) during the deposition of deposition materials that, in some non-limiting applications, include electrodes and / or conductive elements electrically coupled thereto, and / or EM radiation absorbing layers. However, such deposition materials typically have relatively high evaporation temperatures, which impact the ability to reuse the FMM and / or the accuracy of the patterns that can be achieved, with attendant increases in cost, effort, and complexity.

[0008] One method for doing so involves depositing the electrode material and then removing unwanted areas of the electrode material, including by a laser drilling process, in some non-limiting examples, to form the pattern. However, the removal process often involves the creation and / or presence of debris, which can affect the yield of the manufacturing process.

[0009] Furthermore, such methods may not be suitable for use in some applications and / or for use with some devices that include certain topographical features.

[0010] In some non-limiting applications, the goal may be to increase photon transmission and / or reduce photon absorption to provide improved mechanisms along the optical path through at least a portion of the device in at least a wavelength subrange of the electromagnetic (EM) spectrum, including but not limited to, by providing selective deposition of deposition material.

[0011] In some non-limiting applications, the goal may be to provide a mechanism for depositing thin dispersed layers of metal NPs within optoelectronic devices, which may affect the performance of the device in terms of optical properties, performance, stability, reliability, and / or lifetime. The present invention provides, for example, the following. (Item 1) A semiconductor device having a plurality of layers deposited on a substrate and extending to at least one side defined by a lateral axis of the semiconductor device; at least one electromagnetic (EM) radiation absorbing layer deposited on the first layer surface, the absorbing layer comprising at least one grain-structured discontinuous layer comprising a deposition material; 1. A semiconductor device, wherein the at least one grain structure of the at least one EM radiation absorbing layer facilitates absorption of EM radiation in the semiconductor device in at least a portion of at least one of the visible spectrum and the ultraviolet (UV) spectrum, while substantially allowing transmission of EM radiation in the semiconductor device in at least a portion of at least one of the infrared (IR) spectrum and the near-infrared (NIR) spectrum. (Item 2) Item 10. The device of item 1, wherein the deposited material is a metal. (Item 3) Item 3. The device of item 2, wherein the deposited material comprises at least one of magnesium, silver, and ytterbium. (Item 4) 4. The device of any one of items 1 to 3, wherein the deposition material is co-deposited with a co-deposited dielectric material. (Item 5) 5. The device of any one of items 1 to 4, wherein the at least one particle structure has unique characteristics selected from at least one of size, size distribution, shape, surface coverage, configuration, deposition density, and composition. (Item 6) Item 6. The device of item 5, wherein the at least one particle structure has a coverage of at least one of about 10-50%, 10-45%, 12-40%, 15-40%, 15-35%, 18-35%, 20-35%, and 20-30%. (Item 7) 7. The device of claim 5 or 6, wherein a majority of the at least one grain structure has a maximum feature size of less than or equal to at least one of about 40 nm, 35 nm, 30 nm, 25 nm, and 20 nm. (Item 8) 8. The device of any one of items 5-7, wherein the at least one particle structure has a feature size that is at least one of a mean and a median of at least one of about 5-40 nm, 5-30 nm, 8-30 nm, 10-30 nm, 8-25 nm, 10-25 nm, 8-20 nm, 10-20 nm, 10-15 nm, and 8-15 nm. (Item 9) 9. The device of any one of items 1 to 8, wherein the at least one grain structure comprises a seed around which the deposited material tends to coalesce. (Item 10) further comprising a patterned coating disposed on the second layer surface; the first layer surface is an exposed layer surface of the patterned coating; 10. The device of any one of items 1-9, wherein an initial sticking probability for deposition of the deposition material on a surface of the patterned coating is substantially less than 0.3 and at least one of the initial sticking probabilities for deposition of the deposition material on a surface of the second layer, such that the patterned coating is substantially devoid of a closed coating of the deposition material. (Item 11) Item 11. The device of item 10, wherein the patterned coating comprises at least one patterned material. (Item 12) Item 12. The device of item 10 or 11, wherein the patterned coating comprises a first patterned material having a first initial sticking probability for deposition of the deposition material and a second patterned material having a second initial sticking probability for deposition of the deposition material, the first initial sticking probability being substantially less than the second initial sticking probability. (Item 13) Item 13. The device of item 12, wherein the first patterning material is a nucleation inhibitor coating (NIC) material and the second patterning material is selected from at least one of an electron transport layer (ETL) material, Liq, and lithium fluoride (LiF). (Item 14) 14. The device of any one of claims 1 to 13, wherein the layer extends into a first portion and a second portion of the at least one side, the at least one EM radiation absorbing layer extends across the first portion, and the device is adapted to pass at least one EM signal through the first portion at an angle relative to the layer. (Item 15) Item 15. The device of item 14, wherein the at least one EM signal has a wavelength range in at least a portion of at least one of the IR spectrum and the NIR spectrum. (Item 16) 16. The device of claim 14 or 15, wherein the first portion is substantially devoid of a closed coating of the deposition material. (Item 17) 17. The device according to any one of items 14 to 16, wherein the first portion corresponds to at least a part of a signal transmitting region. (Item 18) 18. The device of any one of items 14 to 17, wherein the device is adapted to receive the at least one EM signal through the device for exchange with at least one under-display component. (Item 19) the at least one under-display component: a receiver adapted to receive the at least one EM signal passing through the device; and Item 19. The device of item 18, comprising at least one transmitter adapted to emit the at least one EM signal that passes through the device. (Item 20) 20. The device of claim 19, wherein the receiver is an IR detector and the transmitter is an IR emitter. (Item 21) 21. The device of claim 19 or 20, wherein the transmitter emits a first EM signal and the receiver detects a second EM signal that is a reflection of the first EM signal. (Item 22) 22. The device of claim 21, wherein the exchange of the first and second EM signals provides biometric authentication of a user. (Item 23) 23. A device according to any one of items 18 to 22, wherein the device together with the device forms a display panel of a user device surrounding the under-display component. (Item 24) 24. The device of any one of items 14 to 23, wherein the second portion comprises at least one emission area for emitting the at least one EM signal at an angle relative to the layer. (Item 25) further comprising at least one semiconductor layer disposed on the device layer; each emission region comprising a first electrode and a second electrode; the first electrode is disposed between the substrate and the at least one semiconductor layer; Item 25. The device of item 24, wherein the at least one semiconductor layer is disposed between the first electrode and the second electrode. (Item 26) Item 26. The device of item 25, further comprising at least one closed coating of a deposition material disposed on an exposed layer surface of the device in the second portion. (Item 27) 27. The device of claim 26, wherein the second electrode comprises the at least one closed coating of the deposition material. [Brief explanation of the drawings]

[0012] Examples of the present disclosure will now be described by reference to the following drawings, in which the same reference numbers in different drawings indicate the same and / or, in some non-limiting examples, similar and / or corresponding elements. [Figure 1] 1 is a simplified block diagram from a cross section of an exemplary device having multiple layers on a side thereof, including a discontinuous layer of grain structure on an exposed layer surface of the device, including an EM radiation absorbing layer, according to an example of the present disclosure. [Figure 2] FIG. 2 is a simplified block diagram illustrating a version of the device of FIG. 1 with additional optional layers shown, according to one example of the present disclosure. [Figure 3A] 1 is a SEM micrograph of a sample fabricated in an example of the present disclosure. [Figure 3B] 1 is a SEM micrograph of a sample fabricated in an example of the present disclosure. [Figure 3C] 1 is a SEM micrograph of a sample fabricated in an example of the present disclosure. [Figure 3D] 1 is a SEM micrograph of a sample fabricated in an example of the present disclosure. [Figure 3E] 1 is a SEM micrograph of a sample fabricated in an example of the present disclosure. [Figure 3F]4 is a histogram plotting the histogram distribution of particle structure based on analysis of the micrographs of FIGS. 3A-3E. [Figure 3G] 1 is a SEM micrograph of a sample fabricated in an example of the present disclosure. [Figure 3H] 1 is a SEM micrograph of a sample fabricated in an example of the present disclosure. [Figure 3I] 1 is a SEM micrograph of a sample fabricated in an example of the present disclosure. [Figure 3J] 1 is a SEM micrograph of a sample fabricated in an example of the present disclosure. [Figure 3K] 3B is a histogram plotting the histogram distribution of particle structure based on analysis of the micrographs of FIGS. 3G-3J. [Figure 3L] 1 is a SEM micrograph of a sample fabricated in an example of the present disclosure. [Figure 3M] 1 is a SEM micrograph of a sample fabricated in an example of the present disclosure. [Figure 3N] 1 is a SEM micrograph of a sample fabricated in an example of the present disclosure. [Figure 3O] 1 is a SEM micrograph of a sample fabricated in an example of the present disclosure. [Figure 4A] 2 is a schematic diagram illustrating the EM radiation absorbing layer of FIG. 1 adjacent to the emission region of the device of FIG. 1 formed by deposition of a patterned coating followed by deposition of multiple seeds to form a grain structure according to an example of the present disclosure. [Figure 4B] FIG. 4B is a schematic diagram illustrating a version of the EM radiation absorbing layer of FIG. 4A formed by deposition of a patterned coating prior to deposition of multiple seeds, according to an example of the present disclosure. [Figure 5] 1 is a schematic diagram illustrating an exemplary cross-sectional view of an exemplary user device having a display panel having multiple layers with at least one opening therein, according to an example of the present disclosure. [Figure 6A]6 is a schematic diagram illustrating the use of the user device of FIG. 5, in which at least one aperture is embodied by at least one signal transmission region, to exchange EM radiation in the IR and / or NIR spectrum for biometric authentication of a user, according to an example of the present disclosure. [Figure 6B] 6 is a plan view of the user device of FIG. 5 including a display panel according to an example of the present disclosure. [Figure 6C] 6C shows a cross-sectional view of the device shown in FIG. 6B along line 6C-6C. [Figure 6D] 6 is a plan view of the user device of FIG. 5 including a display panel according to an example of the present disclosure. [Figure 6E] 6E shows a cross-sectional view of the device shown in FIG. 6D along line 6E-6E. [Figure 6F] 6 is a plan view of the user device of FIG. 5 including a display panel according to an example of the present disclosure. [Figure 6G] 6G shows a cross-sectional view of the device shown in FIG. 6F along line 6G-6G. [Figure 6H] 1 shows an enlarged plan view of a portion of a panel according to an example of the present disclosure. [Figure 7A] 1A-1C are simplified block diagrams from cross-section of various examples of an exemplary user device according to one example of the present disclosure, the exemplary user device having a display panel for covering a body and at least one under-display component housed therein for exchanging EM signals at an angle to a layer of the display panel through the user device. [Figure 7B] 1A-1C are simplified block diagrams from cross-section of various examples of an exemplary user device according to one example of the present disclosure, the exemplary user device having a display panel for covering a body and at least one under-display component housed therein for exchanging EM signals at an angle to a layer of the display panel through the user device. [Figure 7C]1A-1C are simplified block diagrams from cross-section of various examples of an exemplary user device according to one example of the present disclosure, the exemplary user device having a display panel for covering a body and at least one under-display component housed therein for exchanging EM signals at an angle to a layer of the display panel through the user device. [Figure 8A] 1 shows multiple SEM images, each of which shows an exemplary sample according to one example of the present disclosure, along with a plot of the distribution of several particles of various characteristic sizes therein. [Figure 8B] 1 shows multiple SEM images, each of which shows an exemplary sample according to one example of the present disclosure, along with a plot of the distribution of several particles of various characteristic sizes therein. [Figure 8C] 1 shows multiple SEM images, each of which shows an exemplary sample according to one example of the present disclosure, along with a plot of the distribution of several particles of various characteristic sizes therein. [Figure 8D] 1 shows multiple SEM images, each of which shows an exemplary sample according to one example of the present disclosure, along with a plot of the distribution of several particles of various characteristic sizes therein. [Figure 8E] 1 shows multiple SEM images, each of which shows an exemplary sample according to one example of the present disclosure, along with a plot of the distribution of several particles of various characteristic sizes therein. [Figure 9A] 1 is a SEM micrograph of a sample fabricated in an example of the present disclosure. [Figure 9B] 1 is a SEM micrograph of a sample fabricated in an example of the present disclosure. [Figure 9C] 9C is a chart of average diameters based on analysis of the micrographs of FIGS. 9A and 9B. [Figure 10] 1 is a simplified block diagram from a cross section of an exemplary device having multiple layers on a side surface formed by selective deposition of a patterned coating on a first portion of the side surface, followed by deposition of a closed coating of deposition material on a second portion thereof, according to one example of the present disclosure. [Figure 11]11A-11C are schematic diagrams illustrating an exemplary process for depositing a patterned coating in a pattern onto the underlying exposed layer surface of an exemplary version of the device of FIG. 10 according to one example of the present disclosure. [Figure 12] 11 is a schematic diagram illustrating an exemplary process for depositing a deposition material onto a second portion of an exposed layer surface including the deposition pattern of the patterned coating of FIG. 10, wherein the patterned coating is a nucleation inhibiting coating (NIC). [Figure 13A] FIG. 11 is a schematic diagram illustrating an exemplary version of the device of FIG. 10 in cross section. [Figure 13B] 13B is a schematic diagram showing the device of FIG. 13A in a complementary plan view. [Figure 13C] FIG. 11 is a schematic diagram illustrating an exemplary version of the device of FIG. 10 in cross section. [Figure 13D] 13D is a schematic diagram showing the device of FIG. 13C in a complementary plan view. [Figure 13E] FIG. 11 is a schematic cross-sectional view of an example of the device of FIG. 10. [Figure 13F] FIG. 11 is a schematic cross-sectional view of an example of the device of FIG. 10. [Figure 13G] FIG. 11 is a schematic cross-sectional view of an example of the device of FIG. 10. [Figure 14A] 11A-11C are schematic diagrams illustrating various potential behaviors of a patterned coating at a deposition interface with a deposited layer in an exemplary version of the device of FIG. 10, according to various examples of the present disclosure. [Figure 14B] 11A-11C are schematic diagrams illustrating various potential behaviors of a patterned coating at a deposition interface with a deposited layer in an exemplary version of the device of FIG. 10, according to various examples of the present disclosure. [Figure 14C] 11A-11C are schematic diagrams illustrating various potential behaviors of a patterned coating at a deposition interface with a deposited layer in an exemplary version of the device of FIG. 10, according to various examples of the present disclosure. [Figure 14D]11A-11C are schematic diagrams illustrating various potential behaviors of a patterned coating at a deposition interface with a deposited layer in an exemplary version of the device of FIG. 10, according to various examples of the present disclosure. [Figure 14E] 11A-11C are schematic diagrams illustrating various potential behaviors of a patterned coating at a deposition interface with a deposited layer in an exemplary version of the device of FIG. 10, according to various examples of the present disclosure. [Figure 14F] 11A-11C are schematic diagrams illustrating various potential behaviors of a patterned coating at a deposition interface with a deposited layer in an exemplary version of the device of FIG. 10, according to various examples of the present disclosure. [Figure 14G] 11A-11C are schematic diagrams illustrating various potential behaviors of a patterned coating at a deposition interface with a deposited layer in an exemplary version of the device of FIG. 10, according to various examples of the present disclosure. [Figure 14H] 11A-11C are schematic diagrams illustrating various potential behaviors of a patterned coating at a deposition interface with a deposited layer in an exemplary version of the device of FIG. 10, according to various examples of the present disclosure. [Figure 14I] 11A-11C are schematic diagrams illustrating various potential behaviors of a patterned coating at a deposition interface with a deposited layer in an exemplary version of the device of FIG. 10, according to various examples of the present disclosure. [Figure 15] 1 is a block diagram of an exemplary electroluminescent device from a cross section according to one example of the present disclosure. [Figure 16] FIG. 16 is a cross-sectional view of the device of FIG. 15. [Figure 17] FIG. 20 is a schematic diagram illustrating, in plan, an exemplary patterned electrode suitable for use in a version of the device of FIG. 18, according to one example of the present disclosure. [Figure 18] FIG. 18 is a schematic diagram illustrating an exemplary cross-sectional view of the device of FIG. 17 taken along line 18-18. [Figure 19A] 16 is a schematic diagram illustrating, in plan view, several exemplary patterns of electrodes suitable for use in an exemplary version of the device of FIG. 15, according to one example of the present disclosure. [Figure 19B]19B-19B are schematic diagrams illustrating exemplary cross-sectional views of the device of FIG. 19A at intermediate stages, taken along line 19B-19B. [Figure 19C] FIG. 19C is a schematic diagram illustrating an exemplary cross-sectional view of the device of FIG. 19A taken along line 19C-19C. [Figure 20] FIG. 16 is a schematic diagram showing a cross-sectional view of an exemplary version of the device of FIG. 15 having an exemplary patterned auxiliary electrode according to an example of the present disclosure. [Figure 21] 1 is a schematic diagram illustrating, in plan view, an exemplary pattern of auxiliary electrodes covering at least one emissive region and at least one non-emissive region, according to one example of the present disclosure. [Figure 22A] 16 is a schematic diagram illustrating, in plan view, an example pattern of an example version of the device of FIG. 15 having multiple groups of diamond-configured emission regions, according to an example of the present disclosure. [Figure 22B] FIG. 22B is a schematic diagram illustrating an exemplary cross-sectional view of the device of FIG. 22A taken along line 22B-22B. [Figure 22C] FIG. 22C is a schematic diagram illustrating an exemplary cross-sectional view of the device of FIG. 22A taken along line 22C-22C. [Figure 23] FIG. 17 is a schematic diagram showing an example cross-sectional view of an example version of the device of FIG. 16 with an additional example deposition step according to one example of the present disclosure. [Figure 24] FIG. 17 is a schematic diagram showing an example cross-sectional view of an example version of the device of FIG. 16 with an additional example deposition step according to one example of the present disclosure. [Figure 25] FIG. 17 is a schematic diagram showing an example cross-sectional view of an example version of the device of FIG. 16 with an additional example deposition step according to one example of the present disclosure. [Figure 26] FIG. 17 is a schematic diagram showing an example cross-sectional view of an example version of the device of FIG. 16 with an additional example deposition step according to one example of the present disclosure. [Figure 27A]16 is a schematic diagram illustrating, in plan view, an example of a transparent version of the device of FIG. 15, including at least one exemplary pixel area and at least one exemplary signal-transmitting area having at least one auxiliary electrode, according to an example of the present disclosure. [Figure 27B] FIG. 27B is a schematic diagram illustrating an exemplary cross-sectional view of the device of FIG. 27A taken along line 27B-27B. [Figure 28A] 16 is a schematic diagram illustrating, in plan view, an example of a transparent version of the device of FIG. 15, including at least one example pixel region and at least one example signal transmission region, according to an example of the present disclosure. [Figure 28B] FIG. 28B is a schematic diagram illustrating an exemplary cross-sectional view of the device of FIG. 28A taken along line 28-28. [Figure 28C] FIG. 28B is a schematic diagram illustrating an exemplary cross-sectional view of the device of FIG. 28A taken along line 28-28. [Figure 29] 17A-17C are schematic diagrams that may show exemplary stages of an exemplary process for fabricating an exemplary version of the device of FIG. 16 having subpixel regions with second electrodes of different thicknesses, according to an example of the present disclosure. [Figure 30] FIG. 16 is a schematic diagram showing an exemplary cross-sectional view of an exemplary version of the device of FIG. 15, in which the second electrode is coupled with an auxiliary electrode, according to one example of the present disclosure. [Figure 31] FIG. 16 is a schematic diagram showing an exemplary cross-sectional view of an exemplary version of the device of FIG. 15 having a divider and a shielding region, such as a recess, in a non-emitting region of the device, according to one example of the present disclosure. [Figure 32A] 16A-16C are schematic diagrams illustrating exemplary cross-sectional views of exemplary versions of the device of FIG. 15 having dividers and shielding regions, such as openings, in non-emitting regions, according to various examples of the present disclosure. [Figure 32B] 16A-16C are schematic diagrams illustrating exemplary cross-sectional views of exemplary versions of the device of FIG. 15 having dividers and shielding regions, such as openings, in non-emitting regions, according to various examples of the present disclosure. [Figure 33]33A-33C are schematic diagrams illustrating exemplary stages of an exemplary process for depositing a deposition layer in a pattern on an exposed layer surface of an exemplary version of the device of FIG. 15 by a selective deposition and subsequent removal process according to an example of the present disclosure. [Figure 34] 1 is an exemplary energy profile showing the relative energy states of adatoms absorbed on a surface, according to an example of the present disclosure. [Figure 35] FIG. 1 is a schematic diagram illustrating the formation of membrane nuclei according to an example of the present disclosure. [Figure 36] 1 is a plot of photoluminescence intensity as a function of wavelength for various experimental samples.

[0013] In this disclosure, a reference number accompanied by at least one numerical value (including, but not limited to, a subscript) and / or lowercase alphabetic character (including, but not limited to, a lowercase character) may be considered to refer to a particular instance and / or a subset of instances of the element or feature described by the reference number. Reference to a reference number without reference to an accompanying value and / or character may generally refer to the element or feature described by the reference number and / or to the set of all instances described thereby, as the context indicates. Similarly, a reference number may have the letter "x" in place of a number. Reference to such a reference number may generally refer to the element or feature described by the reference number with the letter "x" replaced by a number, and / or to the set of all instances described thereby, as the context indicates.

[0014] In this disclosure, for purposes of explanation and not limitation, specific details are set forth, including but not limited to, particular architectures, interfaces, and / or techniques, to provide a thorough understanding of the present disclosure. In some instances, detailed descriptions of well-known systems, techniques, components, devices, circuits, methods, and applications are omitted so as not to obscure the description of the present disclosure with unnecessary detail.

[0015] It will also be appreciated that the block diagrams reproduced herein may represent conceptual views of illustrative components embodying the principles of the present technology.

[0016] Accordingly, the components of the systems and methods have been represented, where appropriate, by conventional symbols in the drawings showing only those specific details relevant to understanding the examples of the present disclosure, so as not to obscure the present disclosure with details that will be readily apparent to those skilled in the art having the benefit of the description herein.

[0017] Any drawings provided herein may not be drawn to scale and may not be considered as limiting the disclosure in any way.

[0018] Any features or acts shown in dashed outline may, in some instances, be considered optional. Summary of the Invention

[0019] It is an object of the present disclosure to obviate or mitigate at least one disadvantage of the prior art.

[0020] It is an object of the present disclosure to obviate or mitigate at least one disadvantage of the prior art.

[0021] The present disclosure discloses a semiconductor device having multiple layers deposited on a substrate and extending to at least one side defined by a transverse axis of the semiconductor device. The device includes at least one EM radiation absorbing layer deposited on a surface of a first layer and including a discontinuous layer of at least one grain structure comprising a deposited material. The at least one grain structure of the at least one EM radiation absorbing layer facilitates absorption of EM radiation in the device in at least a portion of at least one of the visible light spectrum and the ultraviolet (UV) spectrum, while substantially allowing transmission of EM radiation in the device in at least a portion of at least one of the IR spectrum and the NIR spectrum.

[0022] According to a broad aspect, a semiconductor device is disclosed having a plurality of layers deposited on a substrate and extending to at least one side defined by a lateral axis of the semiconductor device, the semiconductor device comprising: at least one electromagnetic (EM) radiation absorbing layer deposited on a first layer surface and including a discontinuous layer of at least one grain structure comprising a deposited material, wherein the at least one grain structure of the at least one EM radiation absorbing layer facilitates absorption of EM radiation in the semiconductor device in at least a portion of at least one of the visible light spectrum and the ultraviolet (UV) spectrum while substantially allowing transmission of EM radiation in the semiconductor device in at least a portion of at least one of the infrared (IR) spectrum and the near infrared (NIR) spectrum.

[0023] In some non-limiting examples, the deposition material can be a metal. In some non-limiting examples, the deposition material can include at least one of magnesium, silver, and ytterbium. In some non-limiting examples, the deposition material can be co-deposited with a co-deposited dielectric material.

[0024] In some non-limiting examples, at least one particle may have a unique characteristic selected from at least one of size, size distribution, shape, surface coverage, configuration, deposition density, and composition. In some non-limiting examples, at least one particle structure may have a coverage of at least one of about 10-50%, 10-45%, 12-40%, 15-40%, 15-35%, 18-35%, 20-35%, and 20-30%. In some non-limiting examples, a majority of at least one particle structure may have a maximum feature size of at most one of about 40 nm, 35 nm, 30 nm, 25 nm, and 20 nm. In some non-limiting examples, the at least one grain structure can have a feature size that is at least one of a mean and a median of at least one of about 5-40 nm, 5-30 nm, 8-30 nm, 10-30 nm, 8-25 nm, 10-25 nm, 8-20 nm, 10-20 nm, 10-15 nm, and 8-15 nm. In some non-limiting examples, the at least one grain structure can include seeds around which the deposited material tends to coalesce.

[0025] In some non-limiting examples, the device may further include a patterned coating disposed on the second layer surface, wherein the first layer surface is an exposed layer surface of the patterned coating, and wherein an initial sticking probability for deposition of a deposition material on the surface of the patterned coating is substantially less than at least one of 0.3 and the initial sticking probability for deposition of a deposition material on the second layer surface, such that the patterned coating substantially lacks a closed coating of the deposition material. In some non-limiting examples, the patterned coating may include at least one patterned material. In some non-limiting examples, the patterned coating may include a first patterned material having a first initial sticking probability for deposition of a deposition material and a second patterned material having a second initial sticking probability for deposition of a deposition material, wherein the first initial sticking probability is substantially less than the second initial sticking probability. In some non-limiting examples, the first patterning material may be a nucleation inhibitor coating (NIC) material, and the second patterning material is selected from at least one of an electron transport layer (ETL) material, Liq, and lithium fluoride (LiF).

[0026] In some non-limiting examples, the layer may extend over a first portion and a second portion of at least one side, with at least one EM radiation absorbing layer extending across the first portion, and the device adapted to pass at least one EM signal through the first portion at an angle relative to the layer. In some non-limiting examples, the at least one EM signal may have a wavelength range in at least a portion of at least one of the IR spectrum and the NIR spectrum. In some non-limiting examples, the first portion may be substantially devoid of a closed coating of deposited material. In some non-limiting examples, the first portion may correspond to at least a portion of a signal-transmitting region.

[0027] In some non-limiting examples, the device may be adapted to receive at least one EM signal through the device for exchange with at least one under-display component. In some non-limiting examples, the at least one under-display component may include at least one of a receiver adapted to receive at least one EM signal passing through the device and a transmitter adapted to emit at least one EM signal passing through the device. In some non-limiting examples, the receiver may be an IR detector and the transmitter may be an IR emitter. In some non-limiting examples, the transmitter may emit a first EM signal and the receiver may detect a second EM signal that is a reflection of the first EM signal. In some non-limiting examples, the exchange of the first and second EM signals may provide biometric authentication of the user.

[0028] In some non-limiting examples, the device can form a display panel of a user device that together with the device surrounds an under-display component.

[0029] In some non-limiting examples, the second portion can comprise at least one emitting region for emitting at least one EM signal at an angle relative to the layer. In some non-limiting examples, the device can further comprise at least one semiconductor layer disposed on the layer, each emitting region comprising a first electrode and a second electrode, the first electrode being disposed between the substrate and the at least one semiconductor layer, and the at least one semiconductor layer being disposed between the first electrode and the second electrode.

[0030] In some non-limiting examples, the device can further comprise at least one closed coating of a deposition material on the exposed layer surface in the second portion. In some non-limiting examples, the second electrode can comprise at least one closed coating of a deposition material. DETAILED DESCRIPTION OF THE INVENTION

[0031] stacked devices The present disclosure relates generally to stacked semiconductor devices, and more particularly to optoelectronic devices. Optoelectronic devices may generally encompass any device that converts electrical signals into photons and vice versa. In some non-limiting examples, stacked semiconductor devices including, but not limited to, optoelectronic devices may function as surfaces, including but not limited to, display panels of user devices.

[0032] Those skilled in the art will understand that while the present disclosure is directed to optoelectronic devices, the principles may be applicable to any panel having multiple layers, including, but not limited to, as a thin film, and in some non-limiting examples, at least one layer of conductive deposited material 1231 (FIG. 12) that can pass electromagnetic (EM) signals, in whole or in part, at an angle to the plane of at least one of the layers.

[0033] Referring now to FIG. 1, a cross-sectional view of an exemplary laminated device 100 can be seen. In some non-limiting examples, FIG. 15 As shown in more detail in FIG. 1, device 100 may comprise multiple layers deposited on a substrate 10 , including, but not limited to, a first layer 110 .

[0034] A horizontal axis identified as the X-axis may be shown along with a longitudinal axis identified as the Z-axis. A second horizontal axis identified as the Y-axis may be shown as substantially transverse to both the X-axis and the Z-axis. At least one of the horizontal axes may define a side of device 100. Some figures herein may be shown in plan views. In such plan views, a pair of horizontal axes is shown, identified as the X-axis and the Y-axis, respectively, which may in some instances substantially transverse to one another. At least one of these horizontal axes may define a side of device 100.

[0035] The layers of device 100 may extend laterally substantially parallel to a plane defined by the lateral axis. Those skilled in the art will understand that the substantially planar representation shown in FIG. 1 may, in some non-limiting examples, be an abstraction for purposes of illustration. In some non-limiting examples, there may be localized substantially planar layers of different thicknesses and dimensions across the lateral extent of device 100, which in some non-limiting examples includes the substantially complete absence of layers and / or layers separated by non-planar transition regions (including lateral gaps and even discontinuities).

[0036] Thus, for illustrative purposes, device 100 may be shown in cross section as a substantially layered structure of substantially parallel planar layers, although such a device may locally exhibit a variety of topographies for defining features, each of which may substantially exhibit the layered profile described in cross section.

[0037] EM Radiation Absorption A nanoparticle (NP) is a particle structure 121 of a substance whose primary characteristic size is on the nanometer (nm) scale, generally understood to be about 1-300 nm. At the nm scale, NPs of a given material may have unique properties (including, but not limited to, optical, chemical, physical, and / or electrical properties) relative to the same material in bulk form.

[0038] These properties can be utilized to improve the performance of multiple NPs when they are formed in layers of stacked semiconductor devices, including but not limited to optoelectronic devices.

[0039] Current mechanisms for introducing such layers of NPs into devices have several drawbacks.

[0040] First, such NPs are typically formed in close-packed layers in such devices and / or dispersed in a matrix material. As a result, the thickness of such NP layers can typically be much greater than the characteristic size of the NPs themselves. The thickness of such NP layers can impart undesirable attributes with respect to device performance, device stability, device reliability, and / or device lifetime, which can reduce or even eliminate any perceived benefits provided by the unique properties of the NPs.

[0041] Second, techniques for synthesizing NPs in and for use in such devices may introduce large amounts of carbon (C), oxygen (O), and / or sulfur (S) through various mechanisms.

[0042] As a non-limiting example, wet chemical methods can be used to introduce NPs into devices, typically with precisely controlled characteristic sizes, size distributions, shapes, surface coverages, configurations, and / or deposition densities. However, such methods typically employ organic capping groups to stabilize the NPs (e.g., synthesis of citrate-capped silver (Ag) NPs), which introduce C, O, and / or S atoms into the synthesized NPs.

[0043] Furthermore, NP layers deposited from solution may typically contain C, O, and / or S due to the solvent used for deposition.

[0044] Additionally, these elements may be introduced as contaminants during the wet chemical process and / or deposition of the NP layer.

[0045] However, when introduced, the presence of large amounts of C, O, and / or S in the NP layer of such devices can degrade the performance, stability, reliability, and / or lifetime of such devices.

[0046] Third, when NP layers are deposited from solution, as the solvent employed dries, the NP layers tend to have non-uniform properties across the NP layer and / or between different patterned regions of such a layer. In some non-limiting examples, the edges of a given NP layer may be significantly thicker or thinner than the interior regions of such a layer, and this inconsistency may adversely affect device performance, stability, reliability, and / or lifetime.

[0047] Fourth, although other methods and / or processes for synthesizing and / or depositing NPs beyond wet chemical synthesis and solution deposition processes exist, including but not limited to, vacuum-based processes (e.g., but not limited to, PVD), existing methods tend to provide insufficient control over the characteristic size, size distribution, shape, surface coverage, composition, deposition density, and / or dispersity of the NPs deposited thereby. As a non-limiting example, in conventional PVD processes, NPs tend to form close-packed films as their size increases. As a result, methods such as conventional PVD methods are generally not well suited to forming NP layers of large, dispersed NPs with low surface coverage. Rather, the insufficient control over the characteristic size, size distribution, shape, surface coverage, composition, and / or deposition density imparted by such conventional methods can result in poor device performance, stability, reliability, and / or lifetime.

[0048] The EM radiation-absorbing coating utilizes plasmonics, a branch of nanophotonics that studies the resonant interaction of EM radiation with metals. Those skilled in the art will appreciate that metal NPs can exhibit LSP excitations and / or coherent oscillations of free electrons whose optical response can be tuned by varying the characteristic size, size distribution, shape, surface coverage, configuration, deposition density, and / or composition of the nanostructures. For EM radiation-absorbing coatings, such optical response can include absorption of EM radiation incident thereon, thereby reducing its reflection.

[0049] Referring again to FIG. 1 , in some non-limiting examples, an EM radiation absorbing (NP) layer 120 may be employed as part of the stacked semiconductor device 100 to absorb EM radiation incident thereon or concomitantly reduce reflection from the device 100.

[0050] In some non-limiting examples, EM radiation absorbing layer 120 can be deposited on and / or over exposed layer surface 11, including, but not limited to, an underlayer, such as, but not limited to, first layer 110.

[0051] In some non-limiting examples, the EM radiation absorbing layer 120 may be formed by depositing a discrete metal grain structure 121 included as a discontinuous layer 130, which may include, in some non-limiting examples, NPs of a given characteristic size, size distribution, shape, surface coverage, configuration, deposition density, and / or composition.

[0052] In some non-limiting examples, the grain structures 121 making up the EM radiation absorbing layer 120 may be and / or include discrete metal plasmonic islands or clusters.

[0053] Those skilled in the art will understand that, given the mechanism by which the material is deposited, due to possible stacking and / or clustering of monomers and / or atoms, the actual size, height, weight, thickness, shape, profile, and / or spacing of grain structures 121 in EM radiation absorbing layer 120 may be substantially non-uniform, in some non-limiting examples. Additionally, while grain structures 121 in EM radiation absorbing layer 120 are shown as having a given profile, this is intended to be illustrative only and not to dictate any size, height, weight, thickness, shape, profile, and / or spacing of such grain structures 121.

[0054] In some non-limiting examples, the absorption can be concentrated in an absorption spectrum that is a range and / or subrange of the EM spectrum, including but not limited to the visible light spectrum. In some non-limiting examples, employing EM radiation absorbing layer 120 as part of stacked semiconductor device 100 can reduce reliance on polarizers therein.

[0055] Those skilled in the art will appreciate that, in some non-limiting examples, multiple EM radiation absorbing layers 120 may be disposed on top of one another, with various sides and different absorption spectra, whether or not separated by additional layers. In this manner, the absorption of a particular region of the device may be tailored according to one or more absorption spectra.

[0056] While EM radiation absorbing layer 120 can absorb EM radiation incident thereon across stacked semiconductor device 100, thereby reducing reflection, one skilled in the art will understand that in some non-limiting examples, EM radiation absorbing layer 120 can absorb EM radiation emitted by device 100 that is incident thereon.

[0057] In some non-limiting examples, such grain structure 121 may be in a small amount, in some non-limiting examples, on the order of a few angstroms or a fraction of an angstrom, on the exposed layer surface 11 of the underlying layer, including but not limited to, first layer 110. 、 The exposed layer surface 11 may be formed by depositing a deposition material 1231 having an average layer thickness. In some non-limiting examples, the exposed layer surface 11 may be of a nucleation-promoting coating (NPC) 1420 (FIG. 14C).

[0058] seed In some non-limiting examples, the size, height, weight, thickness, shape, profile, and / or spacing of grain structures 121 within EM radiation absorbing layer 120 can be more or less specified by depositing seed material as part of EM radiation absorbing layer 120 within the template layer at appropriate locations and / or at appropriate densities and / or deposition stages. In some non-limiting examples, such seed material can act as seeds 122 or inhomogeneities to act as nucleation sites, such as when deposited material 1231 can tend to coalesce around each seed 122 to form grain structures 121.

[0059] In some non-limiting examples, the seed material may include a metal, including but not limited to, ytterbium (Yb) or Ag. In some non-limiting examples, the seed material may have high wetting properties with respect to the deposition material 1231 that is deposited on and coalesces with it.

[0060] In some non-limiting examples, the seeds 122 may be deposited across the exposed layer surface 11 of the device 100, and in some non-limiting examples, within the template layer using an open mask and / or mask-free deposition process of the seed material.

[0061] EM layer patterned coating Referring now to FIG. 2, a version 200 of device 100 is shown having additional optional layers, in some non-limiting examples, an EM layer patterned coating 210 e EM layer patterned coating 210 for the purpose of depositing EM radiation absorbing layer 120. e and the exposed layer surface 11 of a shadow mask 1115 (FIG. 11), which in some non-limiting examples may be a fine metal mask (FMM), thereby selectively depositing over underlying layers, including but not limited to, the first layer 110.

[0062] EM Layer Patterned Coating 210 eAfter selective deposition of the deposition material 1231, the EM layer patterned coating 210 may be formed using, in some non-limiting examples, open mask and / or mask-free deposition processes. e The EM radiation absorbing layer 120 may be deposited on the device 200 as and / or to form an EM radiation absorbing grain structure 121 therein, including but not limited to by coalescing around each seed 122 (if present) that is not covered by the EM radiation absorbing layer 120.

[0063] EM Layer Patterned Coating 210 e can provide a surface with a relatively low initial sticking probability for deposition of the deposition material 1231, which initial sticking probability can be substantially lower than the initial sticking probability for deposition of the deposition material 1231 on the underlying exposed layer surface 11 of the device 200.

[0064] Thus, the underlying exposed layer surface 11 is coated with the EM layer patterned coating 210 e The grain structure 121 may be substantially devoid of a closed coating 1040 (FIG. 10) of deposition material 1231 that may be deposited to form the grain structure 121, including, but not limited to, by coalescing around seeds 122 that are not covered by the deposition material.

[0065] In this way, the EM layer patterned coating 210 e may be selectively deposited, including but not limited to, by using a shadow mask 1115, to allow deposition material 1231 to be deposited, including but not limited to, by using an open mask and / or a mask-free deposition process, thereby forming grain structures 121, including but not limited to, by coalescing around respective seeds 122.

[0066] In some non-limiting examples, the deposition material 1231 deposited on the exposed layer surface 11 of the device 200 may have dielectric constant properties that may be selected to facilitate and / or increase absorption by the EM radiation absorbing layer 120 of EM radiation in wavelength ranges of the EM spectrum, including but not limited to the visible light spectrum, including but not limited to corresponding to specific colors, in some non-limiting examples, or in some time-limited examples.

[0067] In some non-limiting examples, the EM layer patterned coating 210 e can include a patterned material 1111 that exhibits a relatively low initial adhesion probability to the seed material and / or deposition material 1231, so that such an EM layer patterned coating 210 e The surface of the non-EM layer patterned coating 210 may be used in some instances to inhibit the deposition of a closed coating 1040 of deposition material 1231, including applications described herein other than the formation of the EM radiation absorbing layer 120. n and / or may exhibit an increased tendency to deposit deposition material 1231 (and / or seed material) as grain structures 121 relative to the patterned material 1111 they may contain.

[0068] In some non-limiting examples, the EM layer patterned coating 210 e can include multiple materials, at least one of which is a patterned material 1111, including, but not limited to, a patterned material 1111 that exhibits such a relatively low initial adhesion probability to a deposition material 1231 and / or seed material as described above.

[0069] In some non-limiting examples, a first material of the plurality of materials may be a patterned material 1111 having a first initial sticking probability relative to the deposition of the deposition material 1231 and / or seed material, and a second material of the plurality of materials may be a patterned material having a second initial sticking probability relative to the deposition of the deposition material 1231 and / or seed material, where the second initial sticking probability exceeds the first initial sticking probability.

[0070] In some non-limiting examples, the first initial sticking probability and the second initial sticking probability can be measured using substantially the same conditions and parameters.

[0071] In some non-limiting examples, a first material of the plurality of materials may be doped, coated, and / or supplemented with a second material of the plurality of materials, such that the second material may act as a seed or heterogeneity to act as a nucleation site for the deposition material 1231 and / or seed material.

[0072] In some non-limiting examples, the second material of the plurality of materials can include NPC 1420. In some non-limiting examples, the second material of the plurality of materials can include organic materials, including but not limited to polycyclic aromatic compounds, and / or materials containing non-metallic elements, including but not limited to O, S, nitrogen (N), or C, whose presence may otherwise be considered to be contaminants in the source material, the equipment used for deposition, and / or the vacuum chamber environment. In some non-limiting examples, the second material of the plurality of materials may be deposited at a layer thickness that is a fraction of a monolayer to avoid forming a continuous coating 1040 thereof. Rather, a monomer of such material may be deposited. teeth , may tend to be spaced apart laterally to form separate nucleation sites for the deposition material 1231 and / or seed material.

[0073] EM layer patterned coating 210 comprising a mixture of first patterned material 11111 and second patterned material 11112 eA series of samples were fabricated to evaluate the suitability of the EM radiation absorbing layer 120 formed by the first patterned material 11111. In all samples, the first patterned material 11111 was a nucleation inhibitor coating (NIC) that had a substantially low initial sticking probability for the deposition of Ag as the deposition material 1231. material Three example materials were evaluated as the second patterned material 11112, i.e., ETL1537 (FIG. 15) material, Liq, which tends to have a relatively high initial sticking probability for Ag deposition as the deposited material 1231 and may be suitable in some non-limiting examples as NPC1420, and LiF.

[0074] For the ETL1537 material, several samples were prepared by co-depositing various ratios of the first patterned material 11111 and the ETL1537 material onto an indium tin oxide (ITO) substrate to an average layer thickness of 20 nm, and then exposing the exposed layer surface 11 to an Ag vapor flux 1232 to a reference layer thickness of 15 nm.

[0075] Six samples were prepared with volume percent ratios of ETL1537 material to first patterned material 11111 of 1:99 (ETL Sample A), 2:98 (ETL Sample B), 5:95 (ETL Sample C), 10:90 (ETL Sample D), 20:80 (ETL Sample E), and 40:60 (ETL Sample F), respectively. Additionally, two comparative samples were prepared with volume percent ratios of ETL1537 material to first patterned material 11111 of 0:100 (Comparative Sample 1) and 100:0 (Comparative Sample 2), respectively.

[0076] ETL sample B showed a total surface coverage of 15.156%, a mean characteristic size of 13.6292 nm, a dispersity of 2.0462, a number average particle diameter of 14.5399 nm, and a size average particle diameter of 20.7989 nm.

[0077] ETL sample C showed a total surface coverage of 22.083%, a mean characteristic size of 16.6985 nm, a dispersity of 1.6813, a number average particle diameter of 17.8372 nm, and a size average particle diameter of 23.1283 nm.

[0078] ETL sample D showed a total surface coverage of 27.0626%, a mean characteristic size of 19.4518 nm, a dispersity of 1.5521, a number average particle diameter of 20.7487 nm, and a size average particle diameter of 25.8493 nm.

[0079] ETL sample E showed a total surface coverage of 35.5376%, a mean characteristic size of 24.2092 nm, a dispersity of 1.6311, a number average particle diameter of 25.858 nm, and a size average particle diameter of 32.9858 nm.

[0080] 3A to 3E are SEM micrographs of Comparative Sample 1, ETL Sample B, ETL Sample C, ETL Sample D, and ETL Sample E, respectively.

[0081] FIG. 3F is a histogram plotting the histogram distribution of grain structure 121 as a function of characteristic grain size for ETL sample B 305, ETL sample C 310, ETL sample D 315, and ETL sample E 320, with curve fits to histograms 306, 311, 316, and 321, respectively.

[0082] Table 1 below shows the measured percent reduction in transmittance for various samples at various wavelengths.

[0083] [Table 1]

[0084] As can be seen, the ETL as the second patterned material 11112 1537 materials At relatively low concentrations, the reduction in transmittance was minimal across most wavelengths. 1537 materialsAt concentrations above about 5% by volume, a substantial reduction (>10%) was observed at wavelengths of 450 nm and 550 nm in the visible light spectrum, without a significant reduction in transmittance at wavelengths of 700 nm in the IR spectrum and 850 nm in the NIR spectrum.

[0085] For Liq, several samples were prepared by co-depositing various ratios of the first patterning material 11111 and Liq onto an ITO substrate to an average layer thickness of 20 nm, and then exposing the exposed layer surface 11 to an Ag vapor flux 1232 to a reference layer thickness of 15 nm.

[0086] Four samples were prepared with volume percent ratios of Liq to first patterning material 11111 of 2:98 (Liq Sample A), 5:95 (Liq Sample B), 10:90 (Liq Sample C), and 20:80 (Liq Sample D), respectively.

[0087] Liq sample A showed a total surface coverage of 11.1117%, a mean characteristic size of 13.2735 nm, a dispersity of 1.651, a number average particle size of 13.9619 nm, and a size average particle size of 17.9398 nm.

[0088] Liq sample B showed a total surface coverage of 17.2616%, a mean characteristic size of 15.2667 nm, a dispersity of 1.7914, a number average particle size of 16.3933 nm, and a size average particle size of 21.941 nm.

[0089] Liq sample C showed a total surface coverage of 32.2093%, a mean characteristic size of 23.6209 nm, a dispersity of 1.6428, a number average particle size of 25.3038 nm, and a size average particle size of 32.4322 nm.

[0090] 3G to 3J are SEM micrographs of Liq Sample A, Liq Sample B, Liq Sample C, and Liq Sample D, respectively.

[0091] FIG. 3K is a histogram plotting the histogram distribution of particle structure 121 as a function of characteristic particle size for Liq sample B 325, Liq sample A 330, and Liq sample C 335, with curve fits to histograms 326, 331, 336, respectively.

[0092] Table 2 below shows the measured percent reduction in transmittance for various samples at various wavelengths.

[0093] [Table 2]

[0094] As can be seen, there was minimal reduction in transmittance across most wavelengths when the concentration of Liq as second patterned material 11112 was relatively low. However, when the Liq concentration exceeded about 5% by volume, a substantial reduction (>10%) was observed at wavelengths of 450 nm and 550 nm in the visible light spectrum, without a significant reduction in transmittance at wavelengths of 700 nm in the IR spectrum and 850 nm and 1,000 nm in the NIR spectrum.

[0095] For LiF, first ETL 1537 Several samples were prepared by depositing the material onto an ITO substrate to an average layer thickness of 20 nm, then co-depositing the first patterned material 11111 and LiF in various ratios onto the exposed layer surface 11 of the ETL material to an average layer thickness of 20 nm, and then exposing the exposed layer surface 11 to an Ag vapor flux 1232 to a reference layer thickness of 15 nm.

[0096] Four samples were prepared with volume percentage ratios of LiF to first patterning material 11111 of 2:98 (LiF Sample A), 5:95 (LiF Sample B), 10:90 (LiF Sample C), and 20:80 (LiF Sample D), respectively.

[0097] 3L to 3O are SEM micrographs of LiF sample A, LiF sample B, LiF sample C, and LiF sample D, respectively.

[0098] Below Table 3 below shows the measured percent reduction in transmittance for various samples at various wavelengths.

[0099] [Table 3]

[0100] As can be seen, there was minimal reduction in transmittance across most wavelengths when the concentration of LiF as second patterning material 11112 was relatively low. However, when the LiF concentration exceeded about 10% by volume, a significant reduction (8%) was observed at a wavelength of 450 nm in the visible spectrum, without significant reduction in transmittance at wavelengths of 700 nm in the IR spectrum and 850 and 1,000 nm in the NIR spectrum.

[0101] Additionally, substantially no reduction in transmittance at wavelengths above 700 nm was observed for concentrations of LiF up to 20% by volume.

[0102] Co-deposition with dielectric materials Although not shown, in some non-limiting examples, the grain structure 121 that the EM radiation absorbing layer 120 may include may be formed by, including but not limited to, co-depositing the deposition material 1231 with the co-deposited dielectric material without the use of a seed 122.

[0103] In some non-limiting examples, the ratio of deposition material 1231 to codeposited dielectric material can be within at least one of the ranges of about 50:1 to 5:1, 30:1 to 5:1, or 20:1 to 10:1. In some non-limiting examples, the ratio can be at least one of about 50:1, 45:1, 40:1, 35:1, 30:1, 25:1, 20:1, 19:1, 15:1, 12.5:1, 10:1, 7.5:1, or 5:1.

[0104] In some non-limiting examples, the co-deposited dielectric material may have an initial sticking probability that may be less than 1 relative to the deposition of the deposition material 1231 with which it may be co-deposited.

[0105] In some non-limiting examples, the ratio of deposition material 1231 to codeposited dielectric material can vary depending on the initial sticking probability of the codeposited dielectric material relative to the deposition of deposition material 1231 .

[0106] In some non-limiting examples, the co-deposited dielectric material can be an organic material. In some non-limiting examples, the co-deposited dielectric material can be a semiconductor. In some non-limiting examples, the co-deposited dielectric material can be an organic semiconductor.

[0107] In some non-limiting examples, co-depositing the deposition material 1231 with the co-deposited dielectric material can facilitate the formation of the grain structure 121 in the EM radiation absorbing layer 120 in the absence of a template layer containing the seeds 122.

[0108] In some non-limiting examples, co-depositing the deposition material 1231 with the co-deposited dielectric material can facilitate and / or increase absorption by the EM radiation absorbing layer 120 of EM radiation generally, or in some non-limiting examples, in wavelength ranges of the EM spectrum, including but not limited to the visible light spectrum, including but not limited to corresponding to specific colors, and / or subranges and / or wavelengths thereof.

[0109] Absorption around the emission region In some non-limiting examples, the stacked semiconductor device 100 includes at least one emission region 610 (FIG. 7A In some non-limiting examples, the emissive region 610 may be an optoelectronic device 200 such as an organic light emitting diode (OLED) including a first electrode, which in some non-limiting examples may be an anode. 620 (Figure 15 ) and a second electrode, which in some non-limiting examples may be a cathode. 640 (Figure 15 )At least one semiconductor layer disposed between 630 (Figure 15 ) The anode and cathode may correspond to a power supply 1505 (FIG. 15 ) and at least one semiconductor layer electrically coupled to 630 When a pair of holes and electrons combine, EM radiation in the form of photons can be emitted.

[0110] In some non-limiting examples, the EM radiation absorbing layer 120 is 640 may be deposited on and / or over the exposed layer surface 11 of.

[0111] In some non-limiting examples, a side of exposed layer surface 11 of device 100 can include first portion 401 (FIG. 4A) and second portion 402 (FIG. 4A). In some non-limiting examples, second portion 402 can include a portion of underlying exposed layer surface 11 of device 100 that is located beyond first portion 401.

[0112] In some non-limiting examples, EM radiation absorbing layer 120 may be omitted or may not extend over first portion 401, but rather may extend only over second portion 402. In some non-limiting examples, first portion 401 may be more or less the same as version 400 of device 100, as shown by way of non-limiting example in FIG. a 16A ) of at least one non-emitting region 1902 ( FIG. 19A ), and the seed 122 may correspond to the side 1620 ( FIG. 16A ) of the non-EM layer patterned coating 210 n It may be deposited before the deposition of

[0113] Such non-limiting configurations may be suitable to enable and / or maximize the transmittance of EM radiation emitted from at least one emission region 610 while reducing the reflection of external EM radiation incident on exposed layer surface 11 of device 100.

[0114] Therefore, as shown in FIG. 4A, the non-EM layer patterned coating 210 n In scenarios where such a non-EM layer patterned coating 210 may be deposited not for the purpose of depositing the EM radiation absorbing layer 120 but to limit its lateral extent, n The patterned material 1111, which may include, may not exhibit a relatively low initial sticking probability with respect to the deposited material 1231 and / or the seed material, as discussed above.

[0115] Those skilled in the art will understand that, in some non-limiting examples, EM radiation absorbing layer 120 may be omitted from regions of device 100 other than and / or in addition to emission region 610 of device 100, and second portion 402 may, in some examples, correspond to and / or include such other regions.

[0116] In some non-limiting examples, the absorption can be concentrated in an absorption spectrum that is a range and / or subrange of the EM spectrum, including but not limited to the visible light spectrum. In some non-limiting examples, employing EM radiation absorbing layer 120 as part of stacked semiconductor device 100 can reduce reliance on polarizers therein.

[0117] Those skilled in the art will appreciate that, in some non-limiting examples, multiple EM radiation absorbing layers 120 may be disposed on top of one another, with various sides and different absorption spectra, whether or not separated by additional layers. In this manner, the absorption of a particular region of the device may be tailored according to one or more desired absorption spectra.

[0118] While EM radiation absorbing layer 120 can absorb EM radiation incident thereon across stacked semiconductor device 100, thereby reducing reflection, one skilled in the art will understand that in some non-limiting examples, EM radiation absorbing layer 120 can absorb EM radiation emitted by device 100 that is incident thereon.

[0119] In some non-limiting examples, such as that shown in FIG. 4A, the non-EM layer patterned coating 210 n If present, the non-EM layer patterned coating 210 may be deposited on the exposed layer surface 11 after deposition of the seeds 122 in the template layer, so that the seeds 122 may be deposited over both the first portion 401 and the second portion 402. n may cover the seeds 122 deposited over the first portion 401.

[0120] In some non-limiting examples, the non-EM layer patterned coating 210 n may provide a surface with a relatively low initial sticking probability for the deposition of the deposition material 1231 as well as the deposition of the seed material. In such an example, the exemplary version 400 of the device 100 of FIG. b As shown in Figure 2, the non-EM layer patterned coating 210 n may be deposited before, but not after, any deposition of seed material.

[0121] The non-EM layer patterned coating 210 over the first portion 401 n After selectively depositing the conductive deposition material 1231, the conductive deposition material 1231 may be selectively deposited on the device using, in some non-limiting examples, open mask and / or mask-free deposition processes. 400 The non-EM layer patterned coating 210 may be deposited on top of, but is not limited to, n The patterned coating 210 may remain substantially only within the second portion 402, which may be substantially devoid of the patterned coating 210, including but not limited to by coalescing around each seed 122 (if present) that is not covered by the patterned coating 210 as and / or to form a grain structure 121 therein.

[0122] Non-EM layer patterned coating 210 over first portion 401 nAfter selective deposition of the seed material, if deposited, the seed 122 may be deposited in the template layer over the exposed layer surface 11 of the device 400 using, in some non-limiting examples, an open mask and / or a mask-free deposition process, while the seed 122 is deposited over the non-EM layer patterned coating 210. n The ionic liquid may remain substantially only in the second portion 402, which may be substantially devoid of ionic liquid.

[0123] Additionally, the deposition material 1231 may, in some non-limiting examples, be applied to the device using open mask and / or mask-free deposition processes. 400 The deposited material 1231 may be deposited over the exposed layer surface 11 of the non-EM layer patterned coating 210. n The grains 122 may substantially remain as and / or form grain structures 121 only within the second portion 402, which may be substantially devoid of any of the grains 122, including, but not limited to, by coalescing around the respective seeds 122.

[0124] Non-EM Layer Patterned Coating 210 n can provide a surface in the first portion 401 with a relatively low initial sticking probability for deposition of the deposition material 1231 and / or seed material (if present), which may be substantially lower than the initial sticking probability for deposition of the deposition material 1231 and / or seed material (if present) on the underlying exposed layer surface 11 of the device 300 in the second portion 402.

[0125] Thus, the first portion 401 may be substantially devoid of any closed coating 1040 of the seeds 122 and / or deposition material 1231 that may be deposited within the second portion 402 and form the grain structure 121, including but not limited to by coalescing around the seeds 122.

[0126] Those skilled in the art will understand that even if some of the deposition material 1231 and / or some of the seed material remain in the first portion 401, the amount of seeds 122 formed from any such deposition material 1231 and / or seed material in the first portion 401 may be substantially less than in the second portion 402, and any such deposition material 1231 in the first portion 401 may tend to form a discontinuous layer 130 that may be substantially devoid of grain structure 121. Even if some of such deposited material 1231 in first portion 401 forms grain structures 121 around, including but not limited to, seeds 122 formed from the seed material, the size, height, weight, thickness, shape, profile, and / or spacing of any such grain structures 121 may nevertheless be sufficiently different from the size, height, weight, thickness, shape, profile, and / or spacing of the grain structures 121 of the EM radiation absorbing layer 120 in second portion 402 such that absorption of EM radiation in first portion 401 may be substantially less than in second portion 402, including but not limited to, wavelength ranges of the EM spectrum, including but not limited to, the visible light spectrum, including but not limited to, corresponding to particular colors, and / or sub-ranges and / or wavelengths thereof.

[0127] In this way, the non-EM layer patterned coating 210 n may be selectively deposited, including but not limited to, by using a shadow mask 1115, allowing the deposition material 1231 to be deposited, including but not limited to, by using an open mask and / or a mask-free deposition process, thereby forming the grain structures 121, including but not limited to, by coalescing around the respective seeds 122.

[0128] Those skilled in the art will appreciate that structures that exhibit relatively low reflectivity may be suitable for providing EM radiation absorbing layer 120 in some non-limiting examples.

[0129] Display panel 5, there is shown a cross-sectional view of a display panel 510. In some non-limiting examples, the display panel 510 may include, but is not limited to, optoelectronic devices terminating in an outermost layer that forms a surface 501 thereof. 200 1. The stacked semiconductor device 100 may be a version including:

[0130] The face 501 of the display panel 510 may extend across its sides substantially along a plane defined by the horizontal axis.

[0131] User Device In some non-limiting examples, the surface 501, indeed the entire display panel 510, can act as the surface of the user device 500 through which at least one EM signal 531 can be exchanged internally at an angle relative to the plane of the surface 501. In some non-limiting examples, the user device 500 can be a computing device such as, but not limited to, a smartphone, a tablet, a laptop, and / or an e-reader, and / or some other electronic device such as a monitor, a television set, and / or a smart device, including, but not limited to, an automobile display and / or windshield, a consumer electronics device, and / or a medical, commercial, and / or industrial device.

[0132] In some non-limiting examples, the surface 501 may be a body within which at least one under-display component 530 may be housed. 502 and / or may correspond to and / or mate with opening 521 therein.

[0133] In some non-limiting examples, at least one under-display component 530 may be formed integrally with or as an assembled module with the display panel 510 on its surface opposite face 501. In some non-limiting examples, at least one under-display component 530 may be formed on the exposed layer surface 11 of the substrate 10 of the display panel 510 opposite face 501.

[0134] In some non-limiting examples, at least one opening 513 can be formed in the display panel 510 to allow exchange of at least one EM signal 531 through the face 501 of the display panel 510 at an angle relative to the horizontal axis of the display panel 510 or a plane defined by the accompanying layers, including but not limited to the face 501 of the display panel 510.

[0135] In some non-limiting examples, the at least one opening 513 may be understood to include a lack and / or reduction in thickness and / or opacity of a substantially opaque coating otherwise disposed across the display panel 510. In some non-limiting examples, the at least one opening 513 may be understood to include a signal transmissive area, as described herein. 520 It can be embodied as:

[0136] However the at least one aperture 513 is embodied, the at least one EM signal 531 can pass through it, as it does through the surface 501. As a result, the at least one EM signal 531 can be considered to exclude any EM radiation that can extend along a plane defined by the horizontal axis, including, but not limited to, any current that can be conducted across the EM radiation absorbing layer 120 laterally across the display panel 510.

[0137] Furthermore, those skilled in the art will understand that the at least one EM signal 531 can be distinguished from EM radiation itself, including, but not limited to, electrical current and / or the electric field generated thereby, in that the at least one EM signal 531, alone or in conjunction with other EM signals 531, can convey some information content, including, but not limited to, an identifier that can distinguish the at least one EM signal 531 from other EM signals 531. In some non-limiting examples, the information content can be conveyed by specifying, altering, and / or modulating at least one of the wavelength, frequency, phase, timing, bandwidth, resistance, capacitance, impedance, conductance, and / or other characteristics of the at least one EM signal 531.

[0138] In some non-limiting examples, the at least one EM signal 531 passing through the at least one aperture 513 of the display panel 510 may include at least one photon and, in some non-limiting examples, may have a wavelength spectrum within at least one of, but not limited to, the visible light spectrum, the IR spectrum, and / or the NIR spectrum. In some non-limiting examples, the at least one EM signal 531 passing through the at least one aperture 513 of the display panel 510 may have a wavelength within, but not limited to, the IR spectrum and / or the NIR spectrum.

[0139] In some non-limiting examples, the at least one EM signal 531 passing through the at least one opening 513 in the display panel 510 may include ambient light incident on the display panel 510 .

[0140] In some non-limiting examples, at least one EM signal 531 exchanged through at least one opening 513 in the display panel 510 can be transmitted and / or received by at least one under-display component 531.

[0141] In some non-limiting examples, the at least one under-display component 530 may include a single signal transparent area 520 may have a size larger than 520 Not only may the at least one under-display component 531 be located below the at least one emission region 610 extending therebetween, but also below the at least one emission region 610 extending therebetween. Similarly, in some non-limiting examples, the at least one under-display component 531 may have a size larger than a single opening of the at least one opening 513.

[0142] In some non-limiting examples, the at least one under-display component 530 may transmit at least one received EM signal 531 through at least one aperture 513 beyond the user device 500. r a receiver 530 adapted to receive and process r Such a receiver 530 may include r Non-limiting examples include under-display cameras (UDCs) and / or sensors, including, but not limited to, IR sensors or detectors, NIR sensors or detectors, LIDAR detection modules, fingerprint detection modules, light detection modules, IR (proximity) detection modules, iris recognition detection modules, and / or facial recognition detection modules, and / or portions thereof.

[0143] In some non-limiting examples, the at least one under-display component 530 transmits at least one transmitted EM signal 531 through at least one aperture 513 beyond the user device 500. t a transmitter 530 adapted to emit t Such a transmitter 530 may include t Non-limiting examples include EM radiation sources, including, but not limited to, built-in flash, flash devices, IR emitters, and / or NIR emitters, and / or LIDAR detection modules, fingerprint detection modules, light detection modules, IR (proximity) detection modules, iris recognition detection modules, and / or facial recognition detection modules, and / or portions thereof.

[0144] In some non-limiting examples, including but not limited to, transmitter 530 t a transmitted EM signal 531 emitted by at least one under-display component 530 comprising: t At least one EM signal 531 passing through at least one opening 513 in the display panel 510 across the user device 500 emanates from the display panel 510 and emits the emitted EM signal 531. r 510 , passing through at least one opening 513 in the display panel 510 to a receiver 530 r , and the at least one under-display component 530 comprising:

[0145] In some non-limiting examples, the under-display component 530 may include an IR emitter and an IR sensor. By way of non-limiting example, such an under-display component 530 may include as a part, component, or module thereof a dot-matrix projector, a time-of-flight (ToF) sensor module that may operate as direct ToF and / or indirect ToF, a VCSEL, a flood illuminator, a NIR imager, a curved optics, and a diffraction grating.

[0146] In some non-limiting examples, there may be multiple under-display components 530 within the user device 500, and a first under-display component of the multiple under-display components 530 may transmit at least one transmitted EM signal 531 through at least one opening 513 beyond the user device 500. t a transmitter 530 for emitting t a second under-display component of the plurality of under-display components 530 receiving at least one received EM signal 531; r a receiver 530 for receiving r In some non-limiting examples, such a transmitter 530 t and receiver 530 r may be embodied in a single common under-display component 530.

[0147] This can be seen, by way of non-limiting example, in Figure 6A, where a user device 500 is shown having a display panel 510 with at least one display 615 adjacent to, and in some non-limiting examples separated by, in its lateral extent (shown vertically in the figure), at least one signal exchanging display 616. The user device 500 may also include at least one transmitting EM signal 531. t at least one first signal transmitting area in the first signal exchange display section 620 520 at least one transmitter 530 for transmitting across the surface 501 through t and at least one received EM signal 531. r at least one second signal transmitting area in the second signal exchange display portion 616 520 a receiver 530 for receiving through r In some non-limiting examples, at least one of the first and second signal exchange indicators 616 may be the same.

[0148] 6B shows a plan view of a user device 500 according to a non-limiting example, including a display panel 510 defining a face of the device. The device 500 has at most one transmitter 530 arranged across the face 501. t and at least one receiver 530 r FIG. 6C shows a cross-sectional view of device 500 along line 6C-6C.

[0149] The display panel 510 includes a display section 615 and a signal exchanging display section 616. The display section 615 includes a plurality of emission areas 610. The signal exchanging display section 616 includes a plurality of emission areas 610 and a plurality of signal transmission areas 616. 520 The display unit 615 and the signal exchange display unit 616 have a plurality of emission areas 610. 510 Subpixels 64x (Figure 6H) A plurality of signal transmission areas in the signal exchange display section 616 520is configured to allow signals or light having wavelengths corresponding to the IR range of the electromagnetic spectrum to pass through its entire cross section. t and at least one receiver 530 r are arranged behind the corresponding signal exchanging display 616 so that IR signals are emitted and received, respectively, by passing through the signal exchanging display 616 of the panel 510. In the illustrated non-limiting example, at least one transmitter 530 t and at least one receiver 530 r Each of these is shown as having a corresponding signal exchange indicator 616 located in the path of the signal transmission.

[0150] FIG. 6D illustrates a plan view of a user device 500 according to another non-limiting example, including at least one transmitter 530. t and at least one receiver 530 r are both arranged behind a common signal exchange display 616. By way of non-limiting example, the signal exchange display 616 may be t and receiver 530 r 6D. 6E-6E 1 shows a cross-sectional view along the line.

[0151] 6F illustrates a plan view of a user device 500 according to yet another non-limiting example, where the display panel 510 further includes a non-display portion 551. More specifically, the display panel 510 includes at least one transmitter 530. t and at least one receiver 530 r Each of these is arranged behind a corresponding signal exchange display unit 616. In plan view, the non-display unit 551 is 6165. Non-display portion 551 is generally devoid of any light emitting regions. In some non-limiting examples, device 500 houses camera 540 arranged in non-display portion 551. In some non-limiting examples, non-display portion 551 includes through-hole portion 552 arranged to overlap camera 540. Panel 510 within through-hole portion 552 may omit the presence of one or more layers, coatings, and / or components present in display portion 615 and / or signal exchanging display portion 616. As a non-limiting example, panel 510 within through-hole portion 552 may omit the presence of one or more backplane and / or frontplane components, which may otherwise interfere with the image captured by camera 540. In some non-limiting examples, the cover glass of the panel 510 extends substantially across the display portion 615, the signal switching display portion 616, and the through-hole portion 552 so as to be present in all of the aforementioned portions of the panel 510. In some non-limiting examples, the panel 510 further includes a polarizer (not shown), which can extend substantially across the display portion 615, the signal switching display portion 616, and the through-hole portion 552 so as to be present in all of the aforementioned portions of the panel 510. In some non-limiting examples, the presence of a polarizer in the through-hole portion 552 can be omitted to improve the transmission of light through such portions of the panel 510.

[0152] In some non-limiting examples, the non-display portion 551 of the panel 510 further includes a non-through hole portion 553. As a non-limiting example, the non-through hole portion 553 may be arranged between the through hole portion 552 and the signal exchange display portion 616 in a plan view. In some non-limiting examples, the non-through hole portion 553 may surround at least a portion or the entire periphery of the through hole portion 552. Although not specifically shown, the device 500 may include additional modules, components, and / or sensors in a portion of the device 500 corresponding to the non-through hole portion 553 of the display panel 510.

[0153] In some non-limiting examples, the signal switching display 616 may reduce or substantially eliminate the presence of backplane components that would otherwise impede or reduce the transmission of light through the signal switching display 616. As a non-limiting example, the signal switching display 616 may include a TFT structure 701 (Figure 7A) , and / or the presence of TFT components, including, but not limited to, metal trace lines, capacitors, and / or other opaque or light-absorbing elements, may be omitted. In some non-limiting examples, the light-emitting region 610 in the signal switching display portion 616 may be electrically coupled to one or more TFT structures and / or TFT components located in the blind-through hole portion 553 of the non-display portion 551. Specifically, the TFT structures and / or TFT components for actuating subpixels in the signal switching display portion 616 may be relocated outside the signal switching display portion 616 and within the blind-through hole portion 553 of the panel 510 such that relatively high transmission of light in at least the IR and / or NIR wavelength ranges through the non-emitting area in the signal switching display portion 616 may be achieved. As a non-limiting example, the TFT structures and / or TFT components in the blind-through hole portion 553 may be electrically coupled to the subpixels in the signal switching display portion 616 via conductive traces. In some non-limiting examples, the transmitter 530 t and receiver 530 r are arranged adjacent or close to the blind hole portion 553 in plan view so as to reduce the distance that current travels between the TFT structure and / or TFT component and the subpixel.

[0154] In some non-limiting examples, the light emitting region 610 is configured such that at least one of the aperture ratio and pixel density of the light emitting region is the same between the display portion 615 and the signal exchanging display portion 616. In some non-limiting examples, the light emitting region 610 is configured such that both the aperture ratio and pixel density of the light emitting region are the same between the display portion 615 and the signal exchanging display portion 616. In some non-limiting examples, the pixel density may be greater than about 300 ppi, 350 ppi, 400 ppi, 450 ppi, 500 ppi, 550 ppi, or 600 ppi. In some non-limiting examples, the aperture ratio may be greater than about 25%, 27%, 30%, 33%, 35%, or 40%. In some non-limiting examples, the light emitting region 610 or pixel of the panel 510 may be configured such that the user can see the pixel density of the panel 516. 510 To reduce the likelihood of detecting visual differences between the display portion 615 and the signal exchange display portion 616, the display portion 615 and the signal exchange display portion 616 may be shaped and arranged substantially identically.

[0155] 6H shows an expanded plan view of a portion of panel 510, according to a non-limiting example, specifically the configuration and layout of emissive regions 264, represented as subpixels 610x, in display portion 615 and signal switching portion 616. Each portion is provided with a plurality of emissive regions 610, each corresponding to a subpixel. 64x In some non-limiting examples, the sub-pixel 64x are the R (red) subpixels, respectively. 641 , G (green) subpixel 642 , and / or B (blue) subpixel 643 The signal exchange display 616 may correspond to adjacent sub-pixels. 64x There are multiple signal transmission areas between 520 is provided.

[0156] 6H, the gap between the display portion 615 and the signal switching display portion 616 is indicated by a wavy broken line. In some non-limiting examples, the display panel 510 further includes a transition region (not shown) between the display portion 615 and the signal switching display portion 616, and the emissive region 610 and / or the signal transmissive region 616 may be formed in a transition region (not shown). 520 The configuration of the emission regions 610 may differ from the configuration of adjacent display portions 615 and / or signal exchanging display portions 616. In some non-limiting examples, the presence of such transition regions may be omitted, such that the emission regions 610 are provided in a substantially continuous repeating pattern across the display portions 615 and signal exchanging display portions 616.

[0157] Although not shown, in some non-limiting examples, at least one signal transparent region 520 in some non-limiting examples, at least in areas laterally spaced apart from neighboring emission regions 610, and in some non-limiting examples, in the pixel definition layer (PDL) 740 of the TFT insulating layer 709 (FIG. 7). of The thickness may be reduced to improve the transmission and / or transmission angle to and through the layers of surface 501 .

[0158] Exemplary Version 700 of User Device 500 a As shown in FIG. 7A, which is a simplified block diagram of the emitting region 610, in some non-limiting examples, the emitting region 610 may be formed on a side 1610 (FIG. 16 ) includes at least one associated TFT structure 701 for driving the emission region 610 along data lines and / or scan lines (not shown), which may be formed from copper (Cu) and / or transparent conducting oxide (TCO) in some non-limiting examples. to It may extend through and include.

[0159] In some non-limiting examples, at least one received EM signal 531 r transmits at least one transmitted EM signal 531 t, which fragments are reflected from or otherwise returned by the external surface to the user device 500.

[0160] In some non-limiting examples, the user device 500 includes at least one transmitter 530 t At least one transmitted EM signal 531 t and passing through the display panel 510 so that it is incident on the face, profile, or other portion of the user 60 of the user device 500. t Fragments of the signal are reflected from or otherwise returned by the user 60 to produce at least one received EM signal 531. r which then passes through the display panel 510 and thus to at least one receiver 530. r are received and / or detected by

[0161] In some non-limiting examples, at least one transmitter 530 t , at least one transmitted EM signal 531 reflected from the user 60 t and generating at least one received EM signal 531 associated therewith. r (collectively EM signal pair 531) by generating at least one receiver 530 r , thereby providing biometric authentication of the user 60.

[0162] In some non-limiting examples, at least one transmitter 530 t transmits at least one IR signal 531 t As an example, the at least one receiver 530 may be an IR emitter for emitting at least one EM signal 531 having a wavelength range in the IR spectrum and / or the NIR spectrum. r at least one received IR signal 531 rAs such, it may be an IR sensor for receiving at least one EM signal 531 having a wavelength in the IR spectrum and / or NIR spectrum.

[0163] In some non-limiting examples, the signal transmissive areas of the display panel 510 520 are arranged in an array, and at least one transmitter 530 t and / or at least one receiver 530 r 5, at least one EM signal pair 531 associated with them is transmitted through at least one signal transmitting area of ​​the display panel 510. 520 5. The optical fiber 500 is positioned within the user device 500 behind the display panel 510 so as to be configured to pass through the optical fiber 500.

[0164] In some non-limiting examples, at least one transmitter 530 t and at least one receiver 530 r are signal transmission regions with at least one EM signal pair 531 associated therewith. 520 In some non-limiting examples, at least one transmitter 530 t and at least one receiver 530 r signal transmission regions in which at least one EM signal pair 531 associated with them is different 520 is positioned to allow passage of

[0165] In the display panel 510, at least one emission area 610 may be associated with a second portion 402 of the side of the display panel 510, the underlying exposed layer surface 11 of which may have a closed coating 1040 of deposition material 1231 deposited thereon.

[0166] In the display panel 510, at least one signal-transmitting region 520 may be associated with a first portion 401 of the side of the display panel 510, and the EM layer patterned coating 210 emay be disposed on an underlying exposed layer surface 11, which has an EM radiation absorbing layer 120 including a discontinuous layer 130 of at least one grain structure 121 disposed thereon.

[0167] In some non-limiting examples, at least one signal transparent region 520 may be substantially devoid of a closed coating 1040 of deposited material 1231.

[0168] In some non-limiting examples, at least one signal transparent region 520 can facilitate absorption of EM radiation in at least the wavelength range of the visible light spectrum while allowing passage of EM radiation in at least the wavelength range of the IR spectrum.

[0169] This is done by transmitting at least one IR signal 531 t and at least one received IR signal 531 r transmits through at least to the extent that it is in the IR spectrum, while absorbing at least a portion of these (or other) EM signals 531, including EM signals 531 (not shown) within at least the wavelength range of the visible light spectrum, that may be incident on the display panel 510 from an external source, to the extent that it is in the visible light spectrum.

[0170] In this way, the IR emitter 530 t and IR detector 530 r The presence of at least one transmitted IR signal 531 t and at least one received IR signal 531 r The display panel 510 may be at least partially hidden from the user 60 for purposes including, but not limited to, providing biometric authentication of the user 60 without substantially preventing the display panel 510 from transmitting the image data.

[0171] Such a configuration of the display panel 510 may, for example, allow the IR emitter 530 to be illuminated without substantially impairing the user experience. t and / or IR detector 530r is positioned within the user device 500 and includes at least one signal transparent area 520 to allow the user 60 to position the IR emitter 530 within the lateral extent of the display panel 510 and / or t and / or IR detector 530 r It may be advantageous to make it easier to hide

[0172] Those skilled in the art will recognize that, in some non-limiting examples, IR emitter 530 t and / or IR detector 530 r At least one under-display component 530, including but not limited to a single signal-transmitting area 520 as well as multiple signal transmission areas 520 , and / or at least one emissive region 610 extending therebetween. In such an example, the at least one under-display component 530 may be sized to include a plurality of such signal-transmitting regions. 520 and a plurality of such signal transmitting regions may be positioned below the 520 510. The EM signal 531 may be exchanged through the layers of the display panel 510 at an angle to and passing through the layers.

[0173] In some non-limiting examples, at least one semiconductor layer in at least a portion of the emission region 610 630 In some non-limiting examples, the first electrode 620 may be deposited on the exposed layer surface 11 of face 501 comprising:

[0174] In some non-limiting examples, the exposed layer surface 11 of face 501 may be, in some non-limiting examples, at least one semiconductor layer. 630and can be exposed to a vaporized flux 1112 of patterned material 1111 (FIG. 11), including but not limited to, by using a shadow mask 1115, to form patterned coating 210 on first portion 401. Whether or not shadow mask 1115 is employed, patterned coating 210 can have substantially signal transparent areas on its sides. 520 may be limited to

[0175] In some non-limiting examples, exposed layer surface 11 of face 501 may be exposed to a vapor flux 1232 of deposition material 1231, including but not limited to open-mask and / or mask-free deposition processes.

[0176] In some non-limiting examples, at least one signal transparent region 520 Side of 1620 Inside The exposed layer surface 11 of the face 501 may include a patterned coating 210. Thus, at least one signal transmissive region 520 Within the side 1620, the vapor flux 1232 of the deposition material 1231 incident on the exposed layer surface 11 can form at least one grain structure 121 on the exposed layer surface 11 of the patterned coating 210 as the EM radiation absorbing layer 120. In some non-limiting examples, the surface coverage of the EM radiation absorbing layer 120 can be less than or equal to at least one of about 70%, 60%, 50%, 40%, 30%, 25%, 20%, 15%, or 10%.

[0177] At the same time, the patterned coating 210 has substantially non-emissive regions 1902 on its sides. to In some non-limiting examples, the surface within the side 1610 of the emission region 610 501 The exposed layer surface 11 of at least one semiconductor layer 630 Thus, within the second portion 402 of the side surface 1610 of the at least one emission region 610, the vapor flux 1232 of the deposition material 1231 incident on the exposed layer surface 11 is directed toward the second electrode 1610. 640As a result, a closed coating 1040 of the deposited material 1231 can be formed.

[0178] Thus, in some non-limiting examples, the patterned coating 210 serves a dual purpose: to provide a base for deposition of the EM layer radiation absorbing layer 120 in the first portion 401. e as well as the second electrode 1115 without employing a shadow mask 1115 during deposition of the deposition material 1231. 640 a non-EM layer patterned coating 210 for limiting the lateral extent of deposition of the deposition material 1231 to the second portion 402 as n It can function as.

[0179] In some non-limiting examples, the average film thickness of the closed coating 1040 of the deposited material 1231 can be at least one of about 5 nm, 6 nm, or 8 nm. In some non-limiting examples, the deposited material 1231 can include MgAg.

[0180] In some non-limiting examples, the second electrode 640 is the transition region 705 The patterned coating 210 may extend partially over the inner patterned coating 210 .

[0181] Details of the EM radiation absorbing layer In some non-limiting examples, the EM radiation absorbing layer 120 can be formed by forming the EM layer patterned coating 210, including but not limited to, by using a mask-free and / or open-mask deposition process. e The substrate may comprise at least one grain structure 121 deposited thereon.

[0182] Without wishing to be limited to any particular theory, it is believed that forming a closed coating 1040 of deposited material 1231 on the EM layer patterned coating 210 e Although the above may be substantially inhibited, in some non-limiting examples, the EM layer patterned coating 210 eWhen exposed to the deposition of deposition material 1231 thereon, some vapor monomers of the deposition material 1231 teeth , and finally, it can be assumed that at least one grain structure 121 of the deposition material 1231 can be formed thereon.

[0183] Thus, in some non-limiting examples, EM radiation absorbing layer 120 can include a discontinuous layer 130 that, in some non-limiting examples, includes at least one grain structure 121 of deposited material 1231. In some non-limiting examples, at least some of the grain structures 121 may be disconnected from one another. In other words, in some non-limiting examples, discontinuous coating 130 can include features including grain structures 121 that can be physically separated from one another such that EM radiation absorbing layer 120 does not form a closed coating 1040.

[0184] Such an EM radiation absorbing layer 120, in some non-limiting examples, may thus be formed as a grain structure 121, forming an EM layer patterned coating 210 within the display panel 510. e and at least one covering layer 710 and , may include a thin, dispersed layer of deposition material 1231 interposed at and substantially across its lateral extent at the interface between them.

[0185] In some non-limiting examples, at least one of the grain structures 121 of the deposited material 1231 in the EM radiation absorbing layer 120 is patterned as an EM layer patterned coating 210 e In some non-limiting examples, substantially all of the grain structures 121 of the deposited material 1231 in the EM radiation absorbing layer 120 may be in physical contact with the exposed layer surface 11 of the EM layer patterned coating 210. e The substrate may be in physical contact with the exposed layer surface 11 of the substrate.

[0186] Without being bound by any particular theory, it is somewhat surprising that the EM layer patterned coating 210 eIt has been found that the presence of such a thin, dispersed EM radiation absorbing layer 120 of deposited material 1231, including but not limited to at least one grain structure 121, including but not limited to metallic grain structures 121, including but not limited to within a discontinuous layer 130 on the exposed layer surface 11, can exhibit one or more various attributes and concomitant various behaviors, including but not limited to optical effects and properties of the display panel 510, as discussed herein. In some non-limiting examples, such effects and properties can be achieved by the EM layer patterned coating 210. e To some extent, this can be controlled by judicious selection of at least one of the characteristic size, size distribution, shape, surface coverage, composition, deposition density, and / or dispersity of the above particle structures 121.

[0187] In some non-limiting examples, the formation of at least one of the characteristic size, size distribution, shape, surface coverage, composition, deposition density, and / or dispersion of such EM radiation absorbing layer 120 may be determined, in some non-limiting examples, by at least one attribute of patterned material 1111, EM layer patterned coating 210 e Average thickness of EM layer patterned coating 210 e Introduction of non-uniformities in the EM layer and / or patterned coating 210 e The deposition conditions for patterning material 1111 can be controlled by judicious selection of at least one of the deposition environment, including but not limited to, temperature, pressure, duration, deposition rate, and / or deposition process.

[0188] In some non-limiting examples, the formation of at least one of the characteristic size, size distribution, shape, surface coverage, composition, deposition density, and / or dispersion of such EM radiation absorbing layer 120 may be determined, in some non-limiting examples, by at least one attribute of the deposited material 1231, the EM layer patterned coating 210, eThe extent to which the deposition material 1231 may be exposed to deposition (which may, in some non-limiting examples, be specified in terms of the thickness of the corresponding discontinuous layer 130) and / or may be controlled by judicious selection of at least one of the deposition environment, including, but not limited to, the temperature, pressure, duration, deposition rate, and / or method of deposition for the deposition material 1231.

[0189] In some non-limiting examples, at least one grain structure 121 of EM radiation absorbing layer 120 may be provided to exhibit greater absorption in at least a wavelength subrange of the visible light spectrum than in the IR and / or NIR spectrum. In some non-limiting examples, at least one grain structure 121 of EM radiation absorbing layer 120 may be provided to absorb EM radiation in at least a wavelength subrange of the visible light spectrum and not substantially absorb EM radiation in the IR and / or NIR spectrum.

[0190] In some non-limiting examples, the EM radiation absorbing layer 120 of the deposited material 1231, including but not limited to at least one grain structure 120, can include and / or act as a UVA absorbing coating 120 capable of absorbing EM radiation generally in the UVA spectrum.

[0191] In some non-limiting examples, it may be advantageous to provide such a UVA absorbing coating 120 to reduce and / or mitigate the transmission of UVA radiation through the display panel 510. As a non-limiting example, the presence of such a UVA absorbing coating 120 can improve the image quality captured by the under-display component 530 through the display panel 510 by reducing interference caused by UVA radiation.

[0192] In some non-limiting examples, EM radiation absorbing layer 120 may absorb EM radiation in at least a portion of the UV spectrum and at least a portion of the visible spectrum, while exhibiting reduced and / or substantially no absorption of EM radiation in the IR and / or NIR spectrum.

[0193] In some non-limiting examples, an optical effect can be described in terms of its effect on the transmission and / or absorption wavelength spectrum, including the wavelength range and / or its peak intensity.

[0194] Additionally, while the presented models may suggest certain effects on the transmission and / or absorption of EM radiation passing through such EM radiation absorbing layer 120, in some non-limiting examples, such effects may reflect local effects that may not be reflected on a broad, observable basis.

[0195] In some non-limiting examples, the characteristic size of grain structures 121 within (the used observation window of) EM radiation absorbing layer 120 may reflect a statistical distribution.

[0196] In some non-limiting examples, the absorption spectrum intensity may tend to be proportional to the deposition density of the EM radiation absorbing layer 120 for a particular distribution of characteristic sizes of the grain structures 121 .

[0197] In some non-limiting examples, the characteristic size of the grain structures 121 within (the used observation window of) the EM radiation absorbing layer 120 may be concentrated around approximately a single value and / or within a relatively narrow range.

[0198] In some non-limiting examples, the characteristic size of the grain structures 121 in (the used observation window of) the EM radiation absorbing layer 120 can be centered around at least one value and / or within at least one relatively narrow range. As a non-limiting example, the grain structure of the EM radiation absorbing layer 120 can exhibit multimodal behavior such that there are multiple different values ​​and / or ranges around which the characteristic size of the grain structures 121 in (the used observation window of) the EM radiation absorbing layer 120 can be centered.

[0199] In some non-limiting examples, the EM radiation absorbing layer 120 can include at least one first grain structure 1211 having a first range of characteristic sizes and at least one second grain structure 1212 having a second range of characteristic sizes. In some non-limiting examples, the first characteristic size range can correspond to sizes of approximately 50 nm or less, and the second characteristic size range can correspond to sizes of at least 50 nm. As non-limiting examples, the first characteristic size range can correspond to sizes of approximately 1-49 nm, and the second characteristic size range can correspond to sizes of approximately 50-300 nm. In some non-limiting examples, a majority of the first grain structures 1211 can have a characteristic size within at least one of the following ranges: approximately 10-40 nm, 5-30 nm, 10-30 nm, 15-35 nm, 20-35 nm, or 25-35 nm. In some non-limiting examples, the majority of the second grain structures 1212 can have a characteristic size in at least one range of approximately 50-250 nm, 50-200 nm, 60-150 nm, 60-100 nm, or 60-90 nm. In some non-limiting examples, the first grain structures 1211 and the second grain structures 1212 can be interspersed with each other.

[0200] To study the formation of such multimodal particle structures,121 a series of five samples was fabricated. Each sample consisted of an approximately 20 nm thick organic semiconductor layer on a glass substrate. 630 , followed by an approximately 34 nm thick Ag layer, followed by an approximately 30 nm thick EM layer patterned coating 210 eand then depositing the EM layer patterned coating 210. e The surfaces of the samples were prepared by exposing them to Ag vapor flux 1232. SEM images of each sample were taken at various magnifications.

[0201] FIG. 8A shows an SEM image 800 of a first sample and a further, enlarged SEM image 805. As can be seen in image 800, there are several first grain structures 1211 that may tend to be concentrated around a first, small characteristic size, and fewer second grain structures 1212 that may tend to be concentrated around a second, larger characteristic size. A plot 810 of the count of grain structures 121 as a function of characteristic grain size can show that the majority of the first grain structures 1211 may be concentrated around about 30 nm. Analysis shows that the surface coverage of the observation window in image 800 of first grain structures 1211 having a characteristic size of about 50 nm or less was about 38%, while the surface coverage of the observation window in image 800 of second grain structures 1212 having a characteristic size of at least about 50 nm was about 1%.

[0202] FIG. 8B shows an SEM image 820 of the second sample and a further, enlarged SEM image 825. As can be seen in image 820, some first grain structures 1211, which may tend to be centered around a first characteristic size, remain present, while some second grain structures 1212, which may tend to be centered around a second characteristic size, may be larger. Furthermore, such second grain structures 1212 may tend to be more prominent. A plot 830 of the counts of grain structures 121 as a function of characteristic grain size can show two distinguishable peaks: a large peak for the first grain structures 1211 centered around about 30 nm, and a smaller peak for the second grains 1212 centered around about 75 nm. The analysis shows that the surface coverage of the observation window of the image 820 of the first particle structure 1211, which has a characteristic size of about 50 nm or less, was about 23%, while the surface coverage of the observation window of the image 820 of the second particle structure 1212, which has a characteristic size of at least about 50 nm, was about 10%.

[0203] 8C shows an SEM image 840 of the third sample and a further, enlarged SEM image 845. As can be seen in image 840, some first grain structures 1211, which may tend to be centered around a first characteristic size, continue to be present, while some second grain structures 1212, which may tend to be centered around a second characteristic size, may be larger than in the second sample. A plot 850 of the counts of grain structures 121 as a function of characteristic grain size may show two distinguishable peaks: a large peak for the first grain structures 1211 centered around about 30 nm, and a smaller (but larger than shown in plot 830) peak for the second grain structures 1212 centered around about 75 nm. The analysis shows that the surface coverage of the observation window of the image 840 of the first particle structure 1211, which has a characteristic size of about 50 nm or less, was about 19%, while the surface coverage of the observation window of the image 840 of the second particle structure 1212, which has a characteristic size of at least about 50 nm, was about 21%.

[0204] FIG. 8D shows an SEM image 860 of the fourth sample and a further, enlarged, SEM image 865. As can be seen in image 860, several first grain structures 1211 remain present, which may tend to cluster around a first characteristic size, while several second grain structures 1212, which may tend to cluster around a second characteristic size, may be larger. A plot 870 of the counts of grain structures 121 as a function of characteristic grain size can show two distinguishable peaks: a large peak for the first grain structures 1211 centered around approximately 20 nm and a smaller peak for the second grain structures 1212 centered around approximately 85 nm. Analysis indicates that the surface coverage of the observation window in image 860 of the first grain structures 1211 having a characteristic size of approximately 50 nm or less was approximately 14%, while the surface coverage of the observation window in image 860 of the second grain structures 1212 having a characteristic size of at least approximately 50 nm was approximately 34%.

[0205] FIG. 8E shows an SEM image 880 of the fifth sample and a further, enlarged SEM image 885. As can be seen in image 880, some first grain structures 1211, which may tend to be centered around a first characteristic size, remain present, while some second grain structures 1212, which may tend to be centered around a second characteristic size, may be larger. In fact, the second grain structures 1212 may tend to dominate. A plot 890 of the counts of grain structures 121 as a function of characteristic grain size shows two distinguishable peaks: a large peak for the first grain structures 1211 centered around about 15 nm, and a smaller peak for the second grain structures 1212 centered around about 85 nm. The analysis shows that the surface coverage of the observation window of the image 880 of the first particle structure 1211, which has a characteristic size of about 50 nm or less, was about 3%, while the surface coverage of the observation window of the image 880 of the second particle structure 1212, which has a characteristic size of at least about 50 nm, was about 55%.

[0206] Without wishing to be limited to any particular theory, in some non-limiting examples, such multi-modal behavior of the EM radiation absorbing layer 120 may be due to the EM layer patterned coating 210 e It may be hypothesized that a plurality of nucleation sites for the deposition material 1231 may be generated within the EM layer patterned coating 210, including, but not limited to, by doping, coating, and / or supplementing the patterned material 1111 with another material that may act as a seed or inhomogeneity that may act as such nucleation sites. In some non-limiting examples, the first grain structure 1211 of a first characteristic size may be generated within the EM layer patterned coating 210, where such nucleation sites may be substantially absent. e It can be hypothesized that second grain structures 1212 of a second characteristic size may tend to form at the locations of such nucleation sites.

[0207] Those skilled in the art will appreciate that there may be other mechanisms by which such multimodal behavior may be generated.

[0208] The above also assumes, as a simplifying assumption, that the NPs modeling each particle structure 121 may have a perfect spherical shape. Typically, the shape of the particle structures 121 within (the observation window used for) the EM radiation absorbing layer 120 may be highly dependent on the deposition process. In some non-limiting examples, the shape of the particle structures 121 may have a significant effect on the SP excitation exhibited thereby, including but not limited to, the width, wavelength range, and / or intensity of the resonance band, and concomitantly, its absorption band.

[0209] In some non-limiting examples, the material surrounding the EM radiation absorbing layer 120, whether underlying (such that the grain structure 121 may be deposited on its exposed layer surface 11) or later disposed on the exposed layer surface 11 of the EM radiation absorbing layer 120, may affect the optical effects produced by the emission and / or transmission of EM radiation and / or EM signals 531 through the EM radiation absorbing layer 120.

[0210] The EM radiation absorbing layer 120 including the grain structure 121 is coated with an EM layer patterned coating 210 which may be composed of a material having a low refractive index. e It can be hypothesized that placing the EM radiation absorbing layer 120 on, and / or in physical contact with, and / or in close proximity to exposed layer surface 11 may, in some non-limiting examples, shift the absorption spectrum of EM radiation absorbing layer 120.

[0211] EM radiation absorbing layer 120 may be arranged on, and / or in physical contact with, and / or in close proximity to EM radiation absorbing layer 120 such that the presence of EM radiation absorbing layer 120 may adjust and / or modify the absorption spectrum of EM radiation absorbing layer 120, including but not limited to, being configured such that the absorption spectrum of EM radiation absorbing layer 120 may substantially overlap and / or not overlap with at least a wavelength range of the EM spectrum, including but not limited to the visible light spectrum, UV spectrum, and / or IR spectrum.

[0212] In some non-limiting examples, the EM layer patterned coating 210 e and / or patterned material 1111, in some non-limiting examples, when deposited as a form of film and / or coating within display panel 510, and EM layer patterned coating 210 e , in some non-limiting examples, when deposited as a form of film and / or coating within the display panel 510, and under circumstances similar to the deposition of the EM radiation absorbing layer 120.

[0213] In some non-limiting examples, the quotient of the second surface energy / first surface energy can be at least one of at least about 1, 5, 10, or 20.

[0214] In some non-limiting examples, the surface coverage of the area of ​​the EM layer patterned coating 210 with the at least one grain structure 121 deposited thereon can be less than or equal to a maximum threshold coverage.

[0215] In some non-limiting examples, the grain structure 121 may be positioned in a signal transmissive region of the surface 501 of the display panel 510 at an angle relative to the layers of the surface 501. 520In the context of allowing transmission of EM signals 531 in the IR and / or NIR spectrum through the ion exchange membrane, the ion exchange membrane may have a characteristic size that may be in the range of at least one of approximately 1-200 nm, 1-150 nm, 1-100 nm, 1-50 nm, 1-40 nm, 1-30 nm, 1-20 nm, 5-20 nm, or 8-15 nm.

[0216] In some non-limiting examples, the grain structure 121 may be positioned in a signal transmissive region of the surface 501 of the display panel 510 at an angle relative to the layers of the surface 501. 520 In the context of allowing transmission of EM signals 531 in the IR and / or NIR spectrum through the EM radiation absorbing layer 120, the EM radiation absorbing layer 120 may have an average and / or median feature size of at least one of about 5-100 nm, 5-50 nm, 5-40 nm, 5-30 nm, 5-25 nm, 5-20 nm, or 8-15 nm. As a non-limiting example, such average and / or median dimensions may correspond to an average diameter and / or median diameter, respectively, of the grain structures 121 of the EM radiation absorbing layer 120.

[0217] In some non-limiting examples, the majority of the grain structure 121 is aligned with the signal transmissive region of the surface 501 of the display panel 510 at an angle relative to the layers of the surface 501. 520 In the context of allowing transmission of EM signals 531 in the IR and / or NIR spectrum through the substrate, the substrate may have at least one maximum feature size of about 100 nm, 80 nm, 50 nm, 40 nm, 30 nm, 25 nm, 20 nm, or 15 nm or less.

[0218] In some non-limiting examples, the percentage of grain structures 121 that may have such a maximum feature size may be determined by the signal transmissive area of ​​surface 501 of display panel 510 at an angle relative to the layer of surface 501. 520 In the context of allowing transmission of EM signals 531 in the IR and / or NIR spectrum through the EM radiation absorbing layer 120, the area of ​​the EM radiation absorbing layer 120 may be at least one of at least about 70%, 60%, 50%, 40%, 30%, 25%, 20%, 15%, or 10% of the area of ​​the EM radiation absorbing layer 120.

[0219] In some non-limiting examples, the particle structure 121 may be reflective to a signal transmissive region of the surface 501 of the display panel 510 at an angle relative to the layers of the surface 501 while absorbing EM signals 531 within at least a portion of the visible light spectrum and / or UV spectrum. 520 In some non-limiting examples, such particle structures 121 may be configured to allow transmission of EM signals 531 in the IR and / or NIR spectrum through the particle structures 121. In some non-limiting examples, such particle structures 121 may have (i) a coverage of at least one of about 10-50%, 10-45%, 12-40%, 15-40%, 15-35%, 18-35%, 20-35%, or 20-30%, (ii) a majority of the particle structures 121 may have at least one maximum feature size of at least about 40 nm, 35 nm, 30 nm, 25 nm, or 20 nm, and (iii) an average and / or median feature size of at least one of about 5-40 nm, 5-30 nm, 8-30 nm, 10-30 nm, 8-25 nm, 10-25 nm, 8-20 nm, 10-15 nm, or 8-15 nm.

[0220] In some non-limiting examples, the resonance provided by at least one particle structure 121 to enhance transmission of EM signals 531 through non-emitting regions 1902 of surface 501 of display panel 510 at an angle relative to the layers of surface 501 can be tailored by judicious selection of at least one of the characteristic size, size distribution, shape, surface coverage, configuration, dispersion, and / or material of particle structure 121.

[0221] In some non-limiting examples, the resonance can be tuned by varying the deposition thickness of the deposited material 1231.

[0222] In some non-limiting examples, the resonance may be generated by the EM layer patterned coating 210 e The thickness can be adjusted by changing the average thickness of the film.

[0223] In some non-limiting examples, the resonance can be tuned by varying the thickness of the at least one coating layer 710. In some non-limiting examples, the thickness of the at least one coating layer 710 can range from 0 nm (corresponding to the absence of the at least one coating layer 710) to a value exceeding the characteristics of the deposited grain structure 121.

[0224] In some non-limiting examples, the resonance can be tuned by changing the composition of the metal in the deposited material 1231 to change the dielectric constant of the deposited grain structure 121.

[0225] In some non-limiting examples, the resonance can be tuned by doping the patterned material 1111 with organic materials having different compositions.

[0226] In some non-limiting examples, the resonance can be tuned by selecting and / or modifying the patterned material 1111 to have a particular refractive index and / or a particular extraction coefficient.

[0227] In some non-limiting examples, the resonance can be tuned by selecting and / or modifying the material deposited as at least one cladding layer 710 to have a particular refractive index and / or a particular extinction coefficient. As a non-limiting example, typical organic CPL materials may have refractive indices in the range of about 1.7 to 2.0, while SiON, a material typically used as a TFE material, x may have a refractive index that may exceed about 2.4. x may have a high extinction coefficient that may affect the desired resonance characteristics.

[0228] Those skilled in the art will appreciate that additional parameters and / or values ​​and / or ranges thereof may be used to determine the relative position of the non-emissive areas of surface 501 of display panel 510 at an angle relative to the layers of surface 501. 1902It will be appreciated that it may prove suitable to tailor the resonance provided by the EM radiation absorbing layer 120 to allow transmission of the EM signal 531 passing therethrough and / or to improve absorption of EM radiation, which may be visible light as a non-limiting example, incident on the face 501 of the display panel 510.

[0229] Those skilled in the art will appreciate that while certain values ​​and / or ranges of these parameters may be appropriate for tuning the resonance provided by the EM radiation absorbing layer 120 to enhance the transmission of the EM signal 531 through the non-emitting region 1902 of the surface 501 of the display panel 510 at certain angles relative to the layers of the surface 501, other values ​​and / or ranges of such parameters may be appropriate for purposes other than enhancing the transmission of the EM signal 531, including enhancing the performance, stability, reliability, and / or lifetime of the surface 501, and in some non-limiting examples, the presence of a suitable second electrode 1902 within the emitting region 510 of the second portion 402. 640 It will be appreciated that this may be suitable for ensuring deposition of the material and thereby facilitating the emission of EM radiation.

[0230] Additionally, one of ordinary skill in the art will appreciate that there may be additional parameters and / or values ​​and / or ranges that may be suitable for such other purposes.

[0231] In some non-limiting examples, the light is incident on the exposed layer surface 11 of the face 501 in the second portion 402 (i.e., the exposed layer surface 11 of the face 501 is in contact with the EM layer patterned coating 210 e The vapor flux 1232 of the deposition material 1231 (over the sides of the first portion 401 that is the EM layer patterned coating 210 e Even if the deposition material 1231 is not present, the deposition material 1231 may flow at a rate and / or for a duration that is incapable of forming a closed coating 1040 thereon. In such a scenario, the vapor flux 1232 of the deposition material 1231 on the exposed layer surface 11 within the side of the second portion 402 may form at least one grain structure 121, including, but not limited to, the discontinuous layer 130, as shown in FIG. 7A. tcan also be formed thereon.

[0232] FIG. 7B illustrates an exemplary version of the user device 500. 700 b 1 is a simplified block diagram of a display panel. 700 b So, the deposited material 1231 When the vapor flux 1232 of the second electrode 1232 is incident on the exposed layer surface 11, the second electrode 1232 is formed on the second portion 402 as shown in the surface 501. 640 Rather than forming a closed coating 1040 as a t A discontinuous layer 130 including at least one grain structure 121 may be formed in the second portion 402. t When the first electrode 130 is electrically coupled to the second electrode 130, the discontinuous layer 130 640 It can function as.

[0233] In some non-limiting examples, the particle structure 121 t The characteristic size, size distribution, shape, surface coverage, composition, deposition density, and / or dispersion of the particles may be determined by the grain structure 121 of the EM radiation absorbing layer 120. d The particle structure 121 may differ in characteristic size, size distribution, shape, surface coverage, composition, deposition density, and / or dispersity. t The characteristic size of the grain structure 121 of the EM radiation absorbing layer 120 d In some non-limiting examples, the surface coverage of the grain structures 121t may be greater than the characteristic size of the grain structures 121t of the EM radiation absorbing layer 120. d In some non-limiting examples, the surface coverage of the particle structure 121 t The deposition density of the EM radiation absorbing layer 120 is determined by the grain structure 121 of the EM radiation absorbing layer 120. d The deposition density may be greater than that of the

[0234] In some non-limiting examples, the particle structure 121 t The characteristic size, size distribution, shape, surface coverage, composition, deposition density, and / or dispersity of the particles are referred to as the particle structure 121. tmay be such as to allow them to be electrically coupled.

[0235] In some non-limiting examples, the second electrode in the second portion 402 640 At least one grain structure 121 of the discontinuous layer 130 forming t The characteristic size of at least one grain structure 121 of the EM radiation absorbing layer 120 in the first portion 401 d may exceed the characteristic size of

[0236] In some non-limiting examples, the second electrode of the second portion 402 640 At least one grain structure 121 of the discontinuous layer 130 forming t The surface coverage of at least one grain structure 121 of the EM radiation absorbing layer 120 of the first portion 401 d The surface coverage may exceed 100%.

[0237] In some non-limiting examples, the second electrode in the second portion 402 640 The deposition density of the discontinuous layer 130 in the first portion 401 may be greater than the deposition density of the EM radiation absorbing layer 120 in the first portion 401.

[0238] In some non-limiting examples, the second electrode 640 At least one grain structure 121 of the discontinuous layer 130 forming the EM layer patterned coating 210 may extend partially over the EM layer patterned coating 210 in the transition region 705.

[0239] FIG. 7C illustrates an exemplary version of the user device 500. 700 c 5 is a simplified block diagram of a display panel 510. b So, display panel 510 b At least one TFT structure 701 for driving the emission region 610 in the second portion 402 of the side of the display panel 510 b co-located with the emission area 610 in the second portion 402 of the side of the first electrode 620 is the TFT insulating layer 709and at least one such TFT structure extending through the 701 The power supply 1505 is electrically coupled to a terminal and / or ground via at least one drive circuit incorporating the power supply 1505.

[0240] In contrast, the display panel 510 c In the second portion 402 of the side of the face 501, there is no TFT structure 701 co-located with the emission region 610 that it drives. c The first electrode 620 does not penetrate the TFT insulating layer 709. Rather, the display panel 510 c At least one TFT structure 701 for driving the emission region 610 in the second portion 402 of the side of the display panel 510 is located elsewhere (not shown) within that side, and the conductive channel 735 may be a TFT insulating layer 709, in some non-limiting examples. c over the second portion 402 on the exposed layer surface 11 of the display panel 510 c In some non-limiting examples, the conductive channel 735 may extend into the side of the display panel 510. c The conductive channel 735 can extend across at least a portion of the first portion 401 of the side of the surface 501. In some non-limiting examples, the conductive channel 735 can have an average thickness that maximizes the transmittance of the EM signal 531 passing therethrough at an angle relative to the layers of the surface 501. In some non-limiting examples, the conductive channel 735 can be formed from Cu and / or TCO.

[0241] EM Layer Patterned Coating 210 e In order to analyze the characteristics of the EM radiation absorbing layer 120 formed on the exposed layer surface 11 of the silicon dioxide film, a series of samples were fabricated after exposing such exposed layer surface 11 to an Ag vapor flux 1232.

[0242] The sample was prepared by patterning an EM layer on a silicon (Si) substrate. eThe EM layer was then patterned and coated with 210 e The exposed layer surface 11 of the EM layer was exposed to an Ag vapor flux 1232 until a nominal thickness of 8 nm was reached. e After exposing the exposed layer surface 11 to the vapor flux 1232, the EM layer patterned coating 210 e The formation of a discontinuous layer 130 in the form of distinct grain structures 121 of Ag was observed on the exposed layer surface 11 of the Ag layer.

[0243] Such a discontinuous layer 130 feature is the EM layer patterned coating 210 e The Ag discrete grain structures 121 deposited on the exposed layer surface 11 were characterized by SEM to measure their size. Specifically, the average diameter of each discrete grain structure 121 was measured using the SEM layer patterning coating 210. e The area occupied by each distinct grain structure 121 was measured when the exposed layer surface 11 was viewed in plan view, and the area occupied by each distinct grain structure 121 was fitted to a circle of the same area to calculate the average diameter. An SEM micrograph of the sample is shown in Figure 9A, and Figure 9C shows the distribution of average diameters 910 obtained from this analysis. For comparison, a reference sample was prepared in which 8 nm of Ag was deposited directly on a Si substrate. An SEM micrograph of such a reference sample is shown in Figure 9B, and an analysis 920 of this micrograph is also reflected in Figure 9C.

[0244] As can be seen, the EM layer patterned coating 210 e The median size of the distinct Ag grain structures 121 on the exposed layer surface 11 of the EM layer was found to be approximately 13 nm, while the median grain size of the Ag film deposited on the Si substrate of the reference sample was found to be approximately 28 nm. e The area ratio of the exposed layer surface 11 of the Si substrate covered with Ag particles in the reference sample was found to be approximately 22.5%, while the area ratio of the exposed layer surface 11 of the Si substrate covered with Ag particles in the reference sample was found to be approximately 48.5%.

[0245] Additionally, EM layer patterned coating 210 on glass substrate e A glass sample was prepared using substantially the same process by depositing a discontinuous layer 130 of Ag and Ag grain structures 121, and this sample (Sample B) was analyzed to determine the effect of the discontinuous layer 130 on the transmittance through the sample. e onto a glass substrate (Comparative Sample A), and by depositing an 8 nm thick Ag coating directly onto the glass substrate (Comparative Sample C). The transmittance of EM radiation, expressed as a percentage of the intensity of EM radiation detected when EM radiation passes through each sample, was measured at various wavelengths for each sample and is summarized in Table 4 below.

[0246] [Table 4]

[0247] As can be seen, Sample B exhibited a relatively low EM radiation transmittance of about 54% at a wavelength of 450 nm in the visible light spectrum, but a relatively high EM radiation transmittance of about 88% at a wavelength of 850 nm in the NIR spectrum due to EM radiation absorption caused by the presence of EM radiation absorbing layer 120. Because Comparative Sample A exhibited a transmittance of about 90% at a wavelength of 850 nm, it can be seen that the presence of EM radiation absorbing layer 120 did not substantially attenuate the transmission of EM radiation, including, but not limited to, EM signal 531, at such wavelengths. Comparative Sample C exhibited a relatively low transmittance of 30-40% in the visible light spectrum and an even lower transmittance at a wavelength of 850 nm in the NIR spectrum, compared to Sample B.

[0248] For the purposes of the aforementioned analysis, approximately 10 nm on a 500 nm scale 2 and approximately 2.5 nm on the 200 nm scale 2 Small particle structures 121 below a threshold area were ignored as they approached the image resolution.

[0249] Covering layer In some non-limiting examples, the at least one covering layer 710 may be provided in the form of at least one layer of an outcoupling and / or encapsulation coating of the display panel 510, including, but not limited to, an outcoupling layer, a CPL, a layer of TFE, a polarizing layer, or other physical layers and / or coatings that may be deposited on the display panel 510 as part of the manufacturing process. In some non-limiting examples, the at least one covering layer 710 may include lithium fluoride (LiF).

[0250] In some non-limiting examples, the CPL may be a device 200 The function of the CPL is generally to 200 The purpose of this invention may be to promote the outcoupling of light emitted by the ion beam and thus improve the external quantum efficiency (EQE).

[0251] In some non-limiting examples, the at least one coating layer 710 may be deposited at least partially across the lateral extent of the face 501, and in some non-limiting examples, at least partially coating the at least one grain structure 121 of the EM radiation absorbing layer 120 in the first portion 401 and forming the EM layer patterned coating 210 at its exposed layer surface 11. e In some non-limiting examples, the at least one coating layer 710 also forms an interface with the second electrode 402 in the second portion 402. 640 may be at least partially coated.

[0252] In some non-limiting examples, the at least one coating layer 710 can have a high refractive index. In some non-limiting examples, the at least one coating layer 710 can have a high refractive index. e The refractive index may be greater than the refractive index of the

[0253] In some non-limiting examples, the display panel 510 includes an EM layer patterned coating 210 e , an air gap and / or air interface may be provided at the interface with exposed layer surface 11, whether during fabrication, after fabrication, and / or during operation. Accordingly, in some non-limiting examples, such an air gap and / or air interface may be considered at least one covering layer 710. In some non-limiting examples, display panel 510 may include both a CPL and an air gap, and EM radiation absorbing coating 120 may be covered by the CPL, with the air gap disposed on or over the CPL.

[0254] In some non-limiting examples, at least one of the grain structures 121 of the deposited material 1231 in the EM radiation absorbing layer 120 may be in physical contact with the at least one coating layer 710. In some non-limiting examples, substantially all of the grain structures 121 of the deposited material 1231 in the EM radiation absorbing layer 120 may be in physical contact with the at least one coating layer 710.

[0255] Those skilled in the art will understand that there may be additional layers introduced at various stages of manufacture that are not shown.

[0256] In some non-limiting examples, the thin dispersed EM radiation absorbing layer 120 of the grain structure 121 in the first portion 401 is a patterned material 1111 having a low refractive index. coating 210 and at least one cladding layer 710, including a CPL, including, but not limited to, a material that may have a high refractive index, at an angle to the layers of the surface 501. 520 The outcoupling of the at least one EM signal 531 passing through the at least one EM signal 531 may be enhanced.

[0257] Patterning Those skilled in the art will appreciate that further details of patterning deposited material 1231 using patterned coating 210 (whether for the purpose of forming EM radiation absorbing layer 120 or not) are described herein.

[0258] In some non-limiting examples, in first portion 401, patterned coating 210 (which may be a NIC, in some non-limiting examples) comprising patterned material 1111 (which may be a NIC material) may be selectively deposited as a closed coating 1040 on exposed layer surfaces 11 of underlying layers (including, but not limited to, substrate 10) of device 100 only in first portion 401. However, in second portion 402, the exposed layer surfaces 11 of underlying layers may be substantially devoid of closed coating 1040 of patterned material 1111.

[0259] Patterned Coating 10 is a cross-sectional view of a stacked semiconductor device 1000, of which device 100 may be, in some non-limiting examples. Patterned coating 210 may include patterned material 1111. In some non-limiting examples, patterned coating 210 may include a closed coating 1040 of patterned material 1111.

[0260] The patterned coating 210 can provide an exposed layer surface 11 with a relatively low initial adhesion probability for deposition of the deposition material 1231 (in some non-limiting examples, under conditions specified in the dual QCM technique described by Walker et al.), which initial adhesion probability can, in some non-limiting examples, be substantially lower than the initial adhesion probability for deposition of the deposition material 1231 of the underlying exposed layer surface 11 of the device 100 on which the patterned coating 210 is deposited.

[0261] Due to the low initial adhesion probability of the patterned coating 210 and / or patterned material 1111 to the deposition of the deposition material 1231, in some non-limiting examples, when deposited as a film and / or some form of coating, and under circumstances similar to the deposition of the patterned coating 210 in the device 1000, the first portion 401 including the patterned coating 210 may be substantially devoid of a closed coating 1040 of the deposition material 1231.

[0262] In some non-limiting examples, the patterned coating 210 and / or patterned material 1111, when deposited as a film and / or some form of coating, and under conditions similar to the deposition of the patterned coating 210 in the device 1000, may have an initial sticking probability less than or equal to at least one of about 0.9, about 0.3, about 0.2, about 0.15, about 0.1, about 0.08, about 0.05, about 0.03, about 0.02, about 0.01, about 0.008, about 0.005, about 0.003, about 0.001, about 0.0008, about 0.0005, about 0.0003, or about 0.0001, relative to the deposition of the deposition material 1231, in some non-limiting examples.

[0263] In some non-limiting examples, the patterned coating 210 and / or patterned material 1111, when deposited as a film and / or some form of coating, and under conditions similar to the deposition of the patterned coating 210 in the device 1000, may have an initial sticking probability that is less than or equal to at least one of about 0.9, about 0.3, about 0.2, about 0.15, about 0.1, about 0.08, about 0.05, about 0.03, about 0.02, about 0.01, about 0.008, about 0.005, about 0.003, about 0.001, about 0.0008, about 0.0005, about 0.0003, or about 0.0001, relative to the deposition of silver (Ag) and / or magnesium (Mg).

[0264] In some non-limiting examples, the patterned coating 210 and / or patterned material 1111, when deposited as a film and / or some form of coating, and under conditions similar to the deposition of the patterned coating 210 in the device 1000, may have a molecular weight of about 0.15 to 0.0001, about 0.1 to 0.0003, or about 0.1 to 0.0003 relative to the deposition of the deposition material 1231. ,approximately 0.08~0.0005,approximately 0.08~0.0008,approximately 0.05~0.001,approximately 0.03~0.0001,approximately 0.03~0.0003,approximately 0.03~0.0005,approximately 0.03~0.0008,approximately 0.03~0.001,approximately 0.02~0.0001,approximately 0.02~0.0003,approximately 0. 0.02~0.0005, approx. 0.02~0.0008, approx. 0.02~0.001, approx. 0.02~0.005, approx. 0.02~0.008, approx. 0.02~0.01, approx. 0.01~0.0001, approx. 0.01~0.0003, approx. 0.01~0.0005, approx. 0.01~0.0008, approx. 0.01~0.001, approx. 0.01~0.005, approx. 0.01~0.008, approx. 0.008~0 The initial adhesion probability may be at least one of about 0.0001, about 0.008 to 0.0003, about 0.008 to 0.0005, about 0.008 to 0.0008, about 0.008 to 0.001, about 0.008 to 0.005, about 0.005 to 0.0001, about 0.005 to 0.0003, about 0.005 to 0.0005, about 0.005 to 0.0008, or about 0.005 to 0.001.

[0265] In some non-limiting examples, patterned coating 210 and / or patterned material 1111, when deposited as a film and / or some form of coating, and under circumstances similar to the deposition of patterned coating 210 in device 1000, can have an initial sticking probability that is less than or equal to a threshold value for deposition of a plurality of deposition materials 1231. In some non-limiting examples, such threshold value can be at least one of about 0.3, about 0.2, about 0.18, about 0.15, about 0.13, about 0.1, about 0.08, about 0.05, about 0.03, about 0.02, about 0.01, about 0.008, about 0.005, about 0.003, or about 0.001.

[0266] In some non-limiting examples, patterned coating 210 and / or patterned material 1111, when deposited as a film and / or some form of coating, in some non-limiting examples, can have an initial sticking probability that is below such a threshold for deposition of a plurality of deposition materials 1231 selected from at least one of Ag, Mg, ytterbium (Yb), cadmium (Cd), and zinc (Zn) under circumstances similar to the deposition of patterned coating 210 in device 1000. In some further non-limiting examples, patterned coating 210 can exhibit an initial sticking probability that is below such a threshold for deposition of a plurality of deposition materials 1231 selected from at least one of Ag, Mg, and Yb.

[0267] In some non-limiting examples, the patterned coating 210 and / or patterned material 1111, when deposited as a film and / or some form of coating, and under circumstances similar to the deposition of the patterned coating 210 in the device 1000, may exhibit an initial sticking probability for deposition of the first deposition material 1231 that is equal to or less than a first threshold, and an initial sticking probability for deposition of the second deposition material 1231 that is equal to or less than a second threshold. In some non-limiting examples, the first deposition material 1231 may be Ag and the second deposition material 1231 may be Mg. In some other non-limiting examples, the first deposition material 1231 may be Ag and the second deposition material 1231 may be Yb. In some other non-limiting examples, the first deposition material 1231 may be Yb and the second deposition material 1231 may be Mg. In some non-limiting examples, the first deposition material 1231 may be Ag and the second deposition material 1231 may be Mg. In some non-limiting examples, the first deposition material 1231 may be Yb and the second deposition material 1231 may be Mg. In some non-limiting examples, the first threshold may be greater than the second threshold.

[0268] In some non-limiting examples, the patterned coating 210 and / or patterned material 1111, when deposited as a film and / or some form of coating, and under conditions similar to the deposition of the patterned coating 210 in the device 1000, may have a transmittance to EM radiation of at least a threshold transmittance value after being exposed to a vapor flux 1232 of the deposition material 1231, including but not limited to Ag (FIG. 12).

[0269] In some non-limiting examples, such transmittance may be measured after exposing the patterned coating 210 formed as a thin film and / or the exposed layer surface 11 of the patterned material 1111 to a vapor flux 1232 of a deposition material 1231, including but not limited to Ag, under typical conditions that may be used to deposit an electrode of an optoelectronic device, which may be, by way of non-limiting example, the cathode of an organic light emitting diode (OLED) device.

[0270] In some non-limiting examples, the conditions for subjecting the exposed layer surface 11 to a vapor flux 1232 of deposition material 1231, including but not limited to Ag, may be as follows: (i) about 10- 4 Torr or 10 -5 a vacuum pressure of 1 Torr, (ii) a vapor flux 1232 of the deposition material 1231, including but not limited to Ag, substantially corresponds to a reference deposition rate of about 1 angstrom (Å) / second, which may be monitored and / or measured using a QCM, as a non-limiting example, and (iii) the exposed layer surface 11 is subjected to the vapor flux 1232 of the deposition material 1231, including but not limited to Ag, until a reference average layer thickness of about 15 nm is reached, at which point the exposed layer surface 11 is no longer subjected to the vapor flux 1232 of the deposition material 1231, including but not limited to Ag.

[0271] In some non-limiting examples, the exposed layer surface 11 receiving the vapor flux 1232 of the deposition material 1231, including but not limited to Ag, may be substantially at room temperature (e.g., about 25° C.). In some non-limiting examples, the exposed layer surface 11 receiving the vapor flux 1232 of the deposition material 1231, including but not limited to Ag, may be positioned about 65 cm away from an evaporation source that evaporates the deposition material 1231, including but not limited to Ag.

[0272] In some non-limiting examples, the threshold transmittance value may be measured at a wavelength within the visible light spectrum. As a non-limiting example, the threshold transmittance value may be measured at a wavelength of about 460 nm. In some non-limiting examples, the threshold transmittance value may be measured at a wavelength in the IR and / or NIR spectrum. As a non-limiting example, the threshold transmittance value may be measured at a wavelength of about 700 nm, 900 nm, or about 1000 nm. In some non-limiting examples, the threshold transmittance value may be expressed as a percentage of incident EM power that may be transmitted through the sample. In some non-limiting examples, the threshold transmittance value may be at least one of about 60%, about 65%, about 70%, about 75%, about 80%, about 85%, or about 90%.

[0273] In some non-limiting examples, there may be a positive correlation between the initial adhesion probability of the patterned coating 210 and / or patterned material 1111 to the deposition of the deposition material 1231 and, in some non-limiting examples, the average layer thickness of the deposition material 1231 thereon when deposited as a film and / or some form of coating and under circumstances similar to the deposition of the patterned coating 210 in the device 1000.

[0274] Those skilled in the art will appreciate that a high transmittance may generally indicate the absence of a closed coating 1040 of deposited material 1231, which may be Ag as a non-limiting example. On the other hand, a low transmittance may generally indicate the presence of a closed coating 1040 of deposited material 1231, including, but not limited to, Ag, Mg, and / or Yb, since thin metal films, especially when formed as closed coatings 1040, may exhibit high absorption of EM radiation.

[0275] It may further be hypothesized that exposed layer surfaces 11 that exhibit a low initial sticking probability to deposited materials 1231, including but not limited to Ag, Mg, and / or Yb, may exhibit high permeability, whereas exposed layer surfaces 11 that exhibit a high sticking probability to deposited materials 1231, including but not limited to Ag, Mg, and / or Yb, may exhibit low permeability.

[0276] A series of samples were fabricated to measure the transmittance of the example materials and to visually observe whether a closed coating 1040 of Ag was formed on the exposed layer surface 11 of such example materials. Each sample was prepared by depositing an approximately 50 nm thick coating of the example material on a glass substrate and then exposing the exposed layer surface 11 of the coating to an Ag vapor flux 1232 at a rate of about 1 Å / sec until a nominal layer thickness of about 15 nm was reached. Each sample was then visually analyzed, and the transmittance of each sample was measured.

[0277] The molecular structures of the example materials used in the samples herein are shown below.

[0278] [Table 5-1]

[0279] [Table 5-2]

[0280] [Table 5-3]

[0281] Samples on which a substantially closed coating 1040 of Ag was formed were visually identified, and the presence of such a coating in these samples was further confirmed by measuring the transmittance through them, which showed a transmittance of about 50% or less at a wavelength of about 460 nm.

[0282] Samples were also identified that did not have a closed coating 1040 of Ag, and the absence of such a coating in these samples was further confirmed by measuring the transmittance through them, which showed a transmittance of greater than about 70% at a wavelength of about 460 nm.

[0283] The results are summarized below.

[0284] [Table 6]

[0285] Based on the above, it has been found that the materials used in the first seven samples (HT211 to Example Material 2) in Tables 5 and 6 may not be well suited to inhibiting the deposition of deposition materials 1231 thereon, including but not limited to Ag and / or Ag-containing materials.

[0286] On the other hand, it has been found that Example Materials 3 through 9 may be suitable, at least in some non-limiting applications, to act as patterned coatings 210 to inhibit deposition thereon of deposition materials 1231, including, but not limited to, Ag and / or Ag-containing materials.

[0287] In some non-limiting examples, the patterned coating 210 and / or patterned material 1111, when deposited as a film and / or some form of coating, can have a surface energy of less than or equal to at least one of about 24 dynes / cm, about 22 dynes / cm, about 20 dynes / cm, about 18 dynes / cm, about 16 dynes / cm, about 15 dynes / cm, about 13 dynes / cm, about 12 dynes / cm, or about 11 dynes / cm under conditions similar to the deposition of the patterned coating in device 1000.

[0288] In some non-limiting examples, the surface energy may be at least one of about 6 dynes / cm, about 7 dynes / cm, or about 8 dynes / cm.

[0289] In some non-limiting examples, the surface energy may be at least one of about 10-20 dynes / cm, about or about 13-19 dynes / cm.

[0290] In some non-limiting examples, the critical surface tension of a surface may be determined according to the Zisman method, detailed in W. A. ​​Zisman, Advances in Chemistry 43 (1964), pp. 1-51.

[0291] By way of non-limiting example, a series of samples were fabricated to measure the critical surface tension of surfaces formed by various materials, the results of which are summarized below.

[0292] [Table 7]

[0293] Based on the foregoing measurements of critical surface tension in Table 7 and previous observations regarding the presence or absence of a substantially closed coating 1040 of Ag, it has been found that materials that form a low surface energy surface when deposited as a coating (which may be materials having at least one critical surface tension of, by way of non-limiting example, about 13-20 dynes / cm, or 13-19 dynes / cm) may be suitable for forming a patterned coating 210 and inhibiting the deposition of deposition materials 1231 (including, but not limited to, Ag and / or Ag-containing materials) thereon.

[0294] Without wishing to be bound by any particular theory, it may be hypothesized, by way of non-limiting example, that materials forming surfaces with surface energies lower than about 13 dynes / cm may be less suitable as patterning material 1111 in certain applications because such materials may exhibit relatively poor adhesion to layers surrounding them, may exhibit low melting points, and / or may exhibit low sublimation temperatures.

[0295] In some non-limiting examples, the patterned coating 210 and / or the patterned material 1111 may have a low refractive index when deposited as a film and / or some form of coating under conditions similar to the deposition of the patterned coating 210 in the device 1000.

[0296] In some non-limiting examples, the patterned coating 210 and / or patterned material 1111, when deposited as a film and / or some form of coating, can have a refractive index that can be less than or equal to at least one of about 1.55, about 1.5, about 1.45, about 1.43, about 1.4, about 1.39, about 1.37, about 1.35, about 1.32, or about 1.3 for EM radiation of a wavelength of about 550 nm under conditions similar to the deposition of the patterned coating 210 in the device 1000.

[0297] Without wishing to be bound by any particular theory, it has been observed that providing a patterned coating 210 with a low refractive index can improve the transmission of external EM radiation through its second portion 402 in at least some devices 100. As a non-limiting example, a device 1000 including an air gap therein, which may be arranged near or adjacent to the patterned coating 210, can exhibit higher transmission relative to a similarly configured device that was not provided with such a low refractive index patterned coating 210, when the patterned coating 210 has a low refractive index.

[0298] By way of non-limiting example, a series of samples were fabricated to measure the refractive index at a wavelength of 550 nm for coatings formed from several of the various example materials. The results are summarized below.

[0299] [Table 8]

[0300] Based on the foregoing measurements of refractive indices in Table 8 and previous observations regarding the presence or absence of the Ag substantially closed coating 1040 in Table 6, it has been found that materials that form low refractive index coatings, which may have refractive indices less than or equal to at least one of about 1.4 or 1.38, as non-limiting examples, may be suitable for forming patterned coatings 210 to inhibit the deposition of deposition materials 1231 thereon, including, but not limited to, Ag and / or Ag-containing materials.

[0301] In some non-limiting examples, the patterned coating 210 and / or patterned material 1111, when deposited as a film and / or some form of coating, may have an extinction coefficient that may be about 0.01 or less for photons of wavelengths that are at least one of about 600 nm, about 500 nm, about 460 nm, about 420 nm, or about 410 nm under conditions similar to the deposition of the patterned coating 210 in device 1000.

[0302] In some non-limiting examples, patterned coating 210 and / or patterned material 1111, when deposited as a film and / or some form of coating, may not substantially attenuate EM radiation passing therethrough, at least in the visible light spectrum, under conditions similar to the deposition of patterned coating 210 in device 1000.

[0303] In some non-limiting examples, the patterned coating 210 and / or patterned material 1111, when deposited as a film and / or some form of coating, may not substantially attenuate EM radiation passing therethrough, at least in the IR and / or NIR spectrum, under conditions similar to the deposition of the patterned coating 210 in the device 1000.

[0304] In some non-limiting examples, patterned coating 210 and / or patterned material 1111, when deposited as a film and / or some form of coating, can have an extinction coefficient that can be at least one of at least about 0.05, about 0.1, about 0.2, or about 0.5 for EM radiation having a wavelength shorter than at least one of about 400 nm, about 390 nm, about 380 nm, or about 370 nm, under conditions similar to the deposition of patterned coating 210 in device 1000. In this manner, patterned coating 210 and / or patterned material 1111, when deposited as a film and / or some form of coating, can absorb EM radiation in the UVA spectrum that is incident on device 1000, under conditions similar to the deposition of patterned coating 210 in device 1000, thereby reducing the likelihood that EM radiation in the UVA spectrum can have an undesirable effect on device performance, device stability, device reliability, and / or device lifetime.

[0305] In some non-limiting examples, the patterned coating 210 and / or patterned material 1111, when deposited as a film and / or some form of coating, may have a glass transition temperature that is less than or equal to at least one of about 300°C, about 150°C, about 130°C, about 30°C, about 0°C, about −30°C, or about −50°C under conditions similar to the deposition of the patterned coating 210 in device 1000.

[0306] In some non-limiting examples, patterning material 1111 may have a sublimation temperature of at least one of about 100-320° C., about 120-300° C., about 140-280° C., or about 150-250° C. In some non-limiting examples, such a sublimation temperature may allow patterning material 1111 to be readily deposited as a coating using PVD.

[0307] The sublimation temperature of a material can be determined using a variety of methods apparent to those skilled in the art, including but not limited to, by heating the material in a crucible under high vacuum and determining the temperature that can be achieved as follows: Observe the onset of material deposition onto the surface on a QCM mounted at a fixed distance from the crucible, Observe a specific deposition rate, for example, 0.1 Å / sec, on the surface on a QCM mounted at a fixed distance from the crucible; and / or As a non-limiting example, about 10 -4 or about 10 -5 Torr to reach the material's threshold vapor pressure.

[0308] In some non-limiting examples, the sublimation temperature of the material may be, for example, about 10 -4 The temperature that can be achieved to evaporate the material may also be determined by heating the material in an evaporation source in a high vacuum environment of 100 Torr, and thus generating a vapor flux sufficient to cause deposition of the material onto a surface on a QCM mounted a fixed distance from the evaporation source, at a deposition rate of about 0.1 Å / sec, as a non-limiting example.

[0309] In some non-limiting examples, a QCM may be mounted approximately 65 cm from the crucible for purposes of determining the sublimation temperature.

[0310] In some non-limiting examples, patterned coating 210 and / or patterned material 1111 may include fluorine (F) atoms and / or silicon (Si) atoms. As a non-limiting example, patterned material 1111 for forming patterned coating 210 may be a compound including F and / or Si.

[0311] In some non-limiting examples, the patterned material 1111 can include a compound containing F. In some non-limiting examples, the patterned material 1111 can include a compound containing F and carbon (C) atoms. In some non-limiting examples, the patterned material 1111 can include a compound containing F and C in an atomic ratio corresponding to an F / C quotient of at least one of at least about 1, 1.5, or 2. In some non-limiting examples, the atomic ratio of F to C counts all of the F atoms present in the compound structure and, for C atoms, counts the sp atoms present in the compound structure. 3 It can be determined by counting only the hybridized C atoms. In some non-limiting examples, the patterned material 1111 can include a compound that includes, as part of its molecular substructure, a moiety that includes F and C in an atomic ratio corresponding to an F / C quotient of at least about 1, 1.5, or 2.

[0312] In some non-limiting examples, the compound of the patterning material 1111 can include an organic-inorganic hybrid material.

[0313] In some non-limiting examples, patterning material 1111 can be or can include an oligomer.

[0314] In some non-limiting examples, the patterning material 1111 may be or may include a compound having a molecular structure containing a backbone and at least one functional group attached to the backbone. In some non-limiting examples, the backbone may be an inorganic moiety and the at least one functional group may be an organic moiety.

[0315] In some non-limiting examples, such compounds may have a molecular structure containing a siloxane group. In some non-limiting examples, the siloxane group may be a linear, branched, or cyclic siloxane group. In some non-limiting examples, the backbone may be or may include a siloxane group. In some non-limiting examples, the backbone may be or may include a siloxane group and at least one functional group containing F. In some non-limiting examples, the at least one functional group containing F may be a fluoroalkyl group. Non-limiting examples of such compounds include fluorosiloxanes. Non-limiting examples of such compounds are Example Material 6 and Example Material 9.

[0316] In some non-limiting examples, the compound may have a molecular structure including a silsesquioxane group. In some non-limiting examples, the silsesquioxane group may be a POSS. In some non-limiting examples, the backbone may be or include a silsesquioxane group. In some non-limiting examples, the backbone may be or include a silsesquioxane group and at least one functional group containing F. In some non-limiting examples, the at least one functional group containing F may be a fluoroalkyl group. Non-limiting examples of such compounds include fluoro-silsesquioxane and / or fluoro-POSS. A non-limiting example of such a compound is Example Material 8.

[0317] In some non-limiting examples, the compound may have a molecular structure including a substituted or unsubstituted aryl group and / or a substituted or unsubstituted heteroaryl group. In some non-limiting examples, the aryl group may be phenyl or naphthyl. In some non-limiting examples, at least one C atom of the aryl group may be replaced by a heteroatom (which may be, for non-limiting examples, O, N, and / or S) to derive a heteroaryl group. In some non-limiting examples, the backbone may be or may include a substituted or unsubstituted aryl group and / or a substituted or unsubstituted heteroaryl group. In some non-limiting examples, the backbone may be or may include a substituted or unsubstituted aryl group and / or a substituted or unsubstituted heteroaryl group, and at least one functional group containing F. In some non-limiting examples, the at least one functional group containing F may be a fluoroalkyl group.

[0318] In some non-limiting examples, the compounds may have molecular structures that include substituted or unsubstituted linear, branched, or cyclic hydrocarbon groups. In some non-limiting examples, one or more C atoms of the hydrocarbon group may be replaced by a heteroatom, which may be, by way of non-limiting example, O, N, and / or S.

[0319] In some non-limiting examples, the compound can have a molecular structure including a phosphazene group. In some non-limiting examples, the phosphazene group can be a linear, branched, or cyclic phosphazene group. In some non-limiting examples, the backbone can be or include a phosphazene group. In some non-limiting examples, the backbone can be or include a phosphazene group and at least one functional group including F. In some non-limiting examples, the at least one functional group including F can be a fluoroalkyl group. Non-limiting examples of such compounds include fluorophosphazenes. A non-limiting example of such a compound is Example Material 4.

[0320] In some non-limiting examples, the compound can be a fluoropolymer. In some non-limiting examples, the compound can be a block copolymer containing F. In some non-limiting examples, the compound can be an oligomer. In some non-limiting examples, the oligomer can be a fluoro-oligomer. In some non-limiting examples, the compound can be a block oligomer containing F. Non-limiting examples of fluoropolymers and / or fluoro-oligomers are those having the molecular structures of Example Material 3, Example Material 5, and / or Example Material 7.

[0321] In some non-limiting examples, the compound can be a metal complex. In some non-limiting examples, the metal complex can be an organometallic complex. In some non-limiting examples, the organometallic complex can include F. In some non-limiting examples, the organometallic complex can include at least one ligand that includes F. In some non-limiting examples, the at least one ligand that includes F can be or include a fluoroalkyl group.

[0322] In some non-limiting examples, patterning material 1111 may be or include an organic-inorganic hybrid material.

[0323] In some non-limiting examples, patterned material 1111 can include multiple different materials.

[0324] In some non-limiting examples, the molecular weight of the compound of patterning material 1111 may be less than or equal to at least one of about 5,000 g / mol, about 4,500 g / mol, about 4,000 g / mol, about 3,800 g / mol, or about 3,500 g / mol.

[0325] In some non-limiting examples, the molecular weight of the compound of patterning material 1111 may be at least one of about 1,500 g / mol, about 1,700 g / mol, about 2,000 g / mol, about 2,200 g / mol, or about 2,500 g / mol.

[0326] Without wishing to be bound by any particular theory, it can be hypothesized that for compounds adapted to form surfaces having relatively low surface energy, at least in some applications, there may be a goal that the molecular weight of such compounds be at least one of about 1,500-5,000 g / mol, about 1,500-4,500 g / mol, about 1,700-4,500 g / mol, about 2,000-4,000 g / mol, about 2,200-4,000 g / mol, or about 2,500-3,800 g / mol.

[0327] Without wishing to be bound by any particular theory, it may be hypothesized that such compounds may exhibit at least one property that may be suitable for forming coatings and / or layers having (i) a relatively high melting point, by way of non-limiting example, of at least 100°C, (ii) a relatively low surface energy, and / or (iii) a substantially amorphous structure when deposited using a vacuum-based thermal evaporation process, by way of non-limiting example.

[0328] In some non-limiting examples, the percentage of the molar weight of such compounds that can be attributed to the presence of F atoms can be at least one of about 40-90%, about 45-85%, about 50-80%, about 55-75%, or about 60-75%. In some non-limiting examples, the F atoms can constitute a majority of the molar weight of such compounds.

[0329] In some non-limiting examples, the patterned coating 210 may be arranged in a pattern that may be defined by at least one region therein that may be substantially devoid of a closed coating 1040 of the patterned coating 210. In some non-limiting examples, the at least one region may separate the patterned coating 210 into a plurality of distinct pieces thereof. In some non-limiting examples, the plurality of distinct pieces of the patterned coating 210 may be physically separated from one another on their sides. In some non-limiting examples, the plurality of distinct pieces of the patterned coating 210 may be arranged in a regular structure, including, but not limited to, an array or matrix, such that in some non-limiting examples, the distinct pieces of the patterned coating 210 may be arranged in a repeating pattern.

[0330] In some non-limiting examples, at least one of the plurality of distinct segments of patterned coating 210 may each correspond to an emission region 610 .

[0331] In some non-limiting examples, the aperture ratio of the emission region 610 can be less than or equal to at least one of about 50%, about 40%, about 30%, or about 20%.

[0332] In some non-limiting examples, patterned coating 210 may be formed as a single monolithic coating.

[0333] In some non-limiting examples, the patterned coating 210 can have and / or provide at least one nucleation site for the deposition material 1231 due to the patterning material 1111 and / or deposition environment used, but is not limited to these.

[0334] In some non-limiting examples, the patterned coating 210 may be doped, covered, and / or supplemented with another material that may act as a seed or inhomogeneity to act as such nucleation sites for the deposited material 1231. In some non-limiting examples, such other material may include an NPC 1420 material. In some non-limiting examples, such other material may include, by way of non-limiting example, organic materials such as, but not limited to, polycyclic aromatic compounds, and / or materials containing non-metallic elements such as at least one of O, S, N, or C, the presence of which may otherwise be contaminants in the source material, the equipment used for deposition, and / or the vacuum chamber environment. In some non-limiting examples, such other material may be deposited in a layer thickness that is a fraction of a monolayer to avoid the formation of a closed coating 1040 thereof. Rather, monomers of such other material may tend to be laterally spaced to form separate nucleation sites for the deposited material.

[0335] In some non-limiting examples, the patterned coating 210 may act as an optical coating. In some non-limiting examples, the patterned coating 210 may modify at least one property and / or characteristic of the EM radiation (including, but not limited to, the form of photons) emitted by the device 1000. In some non-limiting examples, the patterned coating 210 may exhibit some degree of haze, scattering the emitted EM radiation. In some non-limiting examples, the patterned coating 210 may include a crystalline material for scattering EM radiation transmitted therethrough. Such scattering of EM radiation may, in some non-limiting examples, facilitate enhanced outcoupling of EM radiation from the device. In some non-limiting examples, the patterned coating 210 may initially be deposited as a substantially amorphous coating, including, but not limited to, a substantially amorphous coating, and after its deposition, the patterned coating 210 may be crystallized and then function as an optical coupler.

[0336] Materials suitable for use in providing NICs generally can have low surface energy when deposited as a thin film or coating on a surface. Generally, materials with low surface energy can exhibit low intermolecular forces. Generally, materials with low intermolecular forces can exhibit low melting points. Generally, materials with low melting points may not be suitable for use in some applications requiring high-temperature reliability, for example, up to 60°C, 85°C, or 100°C, due to changes in the physical properties of the coating or material at operating temperatures near the material's melting point. As a non-limiting example, a material with a melting point of 120°C may not be suitable for applications requiring high-temperature reliability up to 100°C. Therefore, for some applications requiring at least high-temperature reliability, a material with a higher melting point may be desirable. Without wishing to be bound by any particular theory, it is hypothesized herein that materials with relatively high surface energy may be useful in at least some applications where high-temperature reliability may be desired.

[0337] Generally, materials with low intermolecular forces may exhibit low sublimation temperatures. In at least some applications, a low sublimation temperature may be undesirable because the material may not be suitable for certain manufacturing processes that require a high degree of control over the thickness of the deposited film. As a non-limiting example, for materials with sublimation temperatures below about 140°C, 120°C, 110°C, 100°C, or 90°C, it may be difficult to control the deposition rate and thickness of films deposited using vacuum thermal evaporation or other methods in the art. Therefore, materials with higher sublimation temperatures may be useful in at least some applications where a high degree of control over film thickness is desired. Without wishing to be bound by any particular theory, it is hypothesized herein that materials with relatively high surface energy may be useful in at least some applications where a high degree of control over film thickness is desired.

[0338] Generally, materials with low surface energy may exhibit a large or wide optical gap, which may correspond, by way of non-limiting example, to the HOMO-LUMO gap of the material. At least some materials with large or wide optical gaps and / or HOMO-LUMO gaps may exhibit relatively weak or no photoluminescence in the visible, deep blue, and / or near-UV wavelength ranges of the electromagnetic spectrum. As a non-limiting example, such materials may exhibit weak or no photoluminescence when subjected to radiation having a wavelength of approximately 365 nm, a common wavelength of radiation sources used in fluorescence microscopy. The presence of such materials may be difficult to detect using standard optical detection techniques, such as fluorescence microscopy, because the materials exhibit weak or no photoluminescence, especially when deposited as thin films. This may be particularly problematic in applications where materials are selectively deposited over portions of a substrate, for example, through a fine metal mask, because it may be desirable to determine the portions where such materials are present following deposition of the material. Therefore, materials with relatively small HOMO-LUMO gaps may be useful in applications where detection of films of materials using optical techniques is desired. Materials with higher surface energies may therefore be desirable for such applications for detecting films of materials using optical techniques.

[0339] In at least some applications, patterned substrates exposed to a vapor flux of the deposition material coating patterning to cause the formation of a discontinuous coating containing particle structures thereon. coating In at least some applications, it may also be desirable to provide a substantially closed coating of deposited material. coating a discontinuous coating containing a grain structure having at least one characteristic is formed on the uncoated second portion by patterning the coating The pattern is formed on the first part of the coatingIt may also be desirable for the first portion to exhibit a sufficiently low initial sticking probability. In at least some applications, it may be desirable to deposit a substantially closed thin film coating of the deposition material, e.g., having a thickness of less than about 100 nm, 50 nm, 25 nm, or 15 nm, while forming a discontinuous film or grain structure of the deposition material, which may be, by way of non-limiting example, a metal or metal alloy, in the second portion. In some non-limiting examples, the relative amount of the deposition material deposited as a discontinuous film or grain structure in the first portion may correspond to about 1% to 50%, 2% to 25%, 5% to 20%, or 7% to 10% of the amount of the deposition material deposited as a substantially closed coating in the second portion, which may correspond, by way of non-limiting example, to a thickness of less than about 100 nm, 75 nm, 50 nm, 25 nm, or 15 nm.

[0340] Without wishing to be bound by any particular theory, it is believed that patterned films containing materials that exhibit relatively high surface energy when deposited as thin films. coating It has been found by the inventors that this method can be useful in at least some applications where the formation of a discontinuous film or grain structure of deposited material in a first portion and a substantially closed coating of deposited material in a second portion is desired, particularly where the thickness of the substantially closed coating is less than about 100 nm, 75 nm, 50 nm, 25 nm, or 15 nm, as non-limiting examples.

[0341] In some non-limiting examples, patterned coating 210 and / or the patterned coating comprises at least two materials. In some non-limiting examples, patterned coating 210 comprises a first material and a second material.

[0342] In some non-limiting examples, patterned coating 210 and / or at least one of the materials of the patterned coating, when deposited as a thin film, forms a NIC.

[0343] In some non-limiting examples, at least one of the materials of patterned coating 210 forms a NIC when deposited as a thin film, and another material of patterned coating 210 forms a NPC when deposited as a thin film. In some non-limiting examples, a first material forms a NPC when deposited as a thin film, and a second material forms a NIC when deposited as a thin film. In some non-limiting examples, the presence of a first material in patterned coating 210 can result in an increased initial adhesion probability of patterned coating 210 compared to when patterned coating 210 is formed from a second material without a substantial presence of the first material.

[0344] In some non-limiting examples, at least one of the materials of patterned coating 210 is adapted to form a surface having a low surface energy when deposited as a thin film. In some non-limiting examples, a first material is adapted to form a surface having a lower surface energy when deposited as a thin film than a surface provided by a thin film of a second material.

[0345] In some non-limiting examples, the patterned coating 210 exhibits photoluminescence. vinegar. This may be achieved, for example, by including a material in patterned coating 210 that exhibits photoluminescence.

[0346] In some non-limiting examples, the patterned coating 210 exhibits photoluminescence at wavelengths corresponding to the UV and / or visible portions of the electromagnetic spectrum. In some non-limiting examples, the photoluminescence can be at wavelengths corresponding to UV, including but not limited to UVA, which corresponds to wavelengths from about 315 nm to about 400 nm, and / or UVB, which corresponds to wavelengths from about 280 nm to about 315 nm. In some non-limiting examples, the photoluminescence can be at wavelengths corresponding to the visible portion of the electromagnetic spectrum, which can correspond to wavelengths from about 380 nm to about 740 nm. In some non-limiting examples, the photoluminescence can be at wavelengths corresponding to deep blue or near UV.

[0347] In some non-limiting examples, the first material has a first optical gap and the second material has a second optical gap. The second optical gap is larger than the first optical gap. In some non-limiting examples, the difference between the first and second optical gaps is greater than about 0.3 eV, greater than about 0.5 eV, greater than about 0.7 eV, greater than about 1 eV, greater than about 1.3 eV, greater than about 1.5 eV, greater than about 1.7 eV, greater than about 2 eV, greater than about 2.5 eV, and / or greater than about 3 eV.

[0348] In some non-limiting examples, the first optical gap is less than about 4.1 eV, less than about 3.5 eV, or less than about 3.4 eV. In some non-limiting examples, the second optical gap is greater than about 3.4 eV, greater than about 3.5 eV, greater than about 4.1 eV, greater than about 5 eV, or greater than about 6.2 eV.

[0349] In some non-limiting examples, the first optical gap and / or the second optical gap correspond to a HOMO-LUMO gap.

[0350] In some non-limiting examples, the first material exhibits photoluminescence at wavelengths corresponding to the UV and / or visible portions of the electromagnetic spectrum. In some non-limiting examples, the photoluminescence can be at wavelengths corresponding to UV, including but not limited to UVA, which corresponds to wavelengths from about 315 nm to about 400 nm, and / or UVB, which corresponds to wavelengths from about 280 nm to about 315 nm. In some non-limiting examples, the photoluminescence can be at wavelengths corresponding to the visible portion of the electromagnetic spectrum, which can correspond to wavelengths from about 380 nm to about 740 nm. In some non-limiting examples, the photoluminescence can be at wavelengths corresponding to deep blue.

[0351] In some non-limiting examples, the first material exhibits photoluminescence at wavelengths corresponding to the visible portion of the electromagnetic spectrum, and the second material exhibits substantially no photoluminescence at any wavelengths corresponding to the visible portion of the electromagnetic spectrum.

[0352] In some non-limiting examples, at least one of the materials of patterned coating 210 exhibits photoluminescence, and at least one of the materials includes conjugated bonds, aryl moieties, donor-acceptor groups, and / or heavy metal complexes.

[0353] As a non-limiting example, photoluminescence of a coating and / or material may be observed through a photoexcitation process. In a photoexcitation process, the coating and / or material is exposed to radiation emitted by a light source, such as a UV lamp. When the radiation emitted by the light source is absorbed by the coating and / or material, electrons within the coating and / or material are temporarily excited. Following excitation, one or more relaxation processes, including, but not limited to, fluorescence and phosphorescence, may occur, resulting in the emission of light from the coating and / or material. The light emitted from the coating and / or material during such processes can be detected, for example, by a photodetector, to characterize the photoluminescence properties of the coating and / or material. As used herein, the wavelength of photoluminescence with respect to a coating and / or material generally refers to the wavelength of light emitted by such coating and / or material as a result of the relaxation of electrons from an excited state. As will be understood by one of ordinary skill in the art, the wavelength of light emitted by the coating and / or material as a result of a photoexcitation process is generally longer than the wavelength of the radiation used to initiate the photoexcitation. Photoluminescence can be detected and / or characterized using a variety of techniques known in the art, including, but not limited to, fluorescence microscopy. As used herein, a photoluminescent coating or material is a coating or material that exhibits photoluminescence at a certain wavelength when irradiated with excitation radiation of a particular wavelength. In some non-limiting examples, a photoluminescent coating or material may exhibit photoluminescence at wavelengths greater than about 365 nm when irradiated with excitation radiation having a wavelength of 365 nm. Photoluminescent coatings can be detected on substrates using standard optical techniques, such as fluorescence microscopy, which are useful for quantifying, measuring, or inspecting the presence of such coatings or materials.

[0354] In some non-limiting examples, the optical gaps of the various coatings and / or materials, including, by way of non-limiting example, the first optical gap and / or the second optical gap, may correspond to the energy gap of the coatings and / or materials where photons are absorbed or emitted during the photoexcitation process.

[0355] In some non-limiting examples, photoluminescence is detected and / or characterized by exposing the coating and / or material to radiation having a wavelength corresponding to the UV portion of the electromagnetic spectrum, such as, by way of non-limiting example, UVA or UVB. In some non-limiting examples, the radiation for causing photoexcitation has a wavelength of about 365 nm.

[0356] In some non-limiting examples, the second material exhibits substantially no photoluminescence at any wavelength corresponding to the visible portion of the electromagnetic spectrum. In some non-limiting examples, the second material exhibits no photoluminescence when exposed to radiation having wavelengths of about 300 nm, 320 nm, 350 nm, and / or 365 nm or longer. By way of non-limiting example, the second material may exhibit a negligible amount of absorption and / or no detectable amount of absorption when exposed to such radiation. In some non-limiting examples, the second material's second optical gap may be wider than the photon energy of the radiation emitted by the light source, such that the second material does not undergo photoexcitation when exposed to such radiation. However, a patterned coating 210 containing such a second material may nevertheless exhibit photoluminescence when exposed to such radiation due to the photoluminescent first material. Thus, for example, the presence of patterned coating 210 may be readily detected and / or observed using routine characterization techniques, such as fluorescence microscopy, upon deposition of patterned coating 210.

[0357] In some non-limiting examples, the concentration (e.g., by weight) of the first material in patterned coating 210 is less than the concentration of the second material in patterned coating 210. In some non-limiting examples, patterned coating 210 may contain about 0.1% by weight or more, 0.2% by weight or more, 0.5% by weight or more, 0.8% by weight or more, 1% by weight or more, 3% by weight or more, 5% by weight or more, 8% by weight or more, 10% by weight or more, 15% by weight or more, or 20% by weight or more of the first material. In some non-limiting examples, patterned coating 210 may contain about 50% by weight or less, about 40% by weight or less, about 30% by weight or less, about 25% by weight or less, about 20% by weight or less, about 15% by weight or less, about 10% by weight or less, about 8% by weight or less, about 5% by weight or less, about 3% by weight or less, or about 1% by weight or less of the first material. In some non-limiting examples, the remainder of patterned coating 210 may consist substantially of the second material. In some non-limiting examples, patterned coating 210 may contain additional materials, such as, by way of non-limiting example, a third material and / or a fourth material.

[0358] In some non-limiting examples, at least one of the materials of patterned coating 210, which may be, for example, the first material and / or the second material, contains at least one of fluorine (F) atoms and silicon (Si) atoms. As a non-limiting example, at least one of the first material and the second material contains at least one of F and Si. In some further non-limiting examples, the first material includes F and / or Si, and the second material includes F and / or Si. In some non-limiting examples, both the first material and the second material include F. In some non-limiting examples, both the first material and the second material include Si. In some non-limiting examples, each of the first material and the second material includes F and / or Si.

[0359] In some non-limiting examples, at least one of the first material and the second material contains both F and Si. In some non-limiting examples, one of the first material and the second material does not contain F and / or Si. In some non-limiting examples, the second material contains F and / or Si and the first material does not contain F and / or Si.

[0360] In some non-limiting examples, at least one of the materials of patterned coating 210, which may be, for example, the first material and / or the second material, contains F and at least one of the other materials of patterned coating 210 contains sp 2 In some non-limiting examples, at least one of the materials of patterned coating 210, which may be, for example, the first material and / or the second material, contains F and at least one of the other materials of patterned coating 210 contains sp 3 In some non-limiting examples, at least one of the materials of patterned coating 210, which may be, for example, the first material and / or the second material, contains F and sp 3 The patterned coating 210 may contain carbon and at least one of the other materials may be sp 2 In some non-limiting examples, at least one of the materials of patterned coating 210, which may be, for example, the first material and / or the second material, contains F and sp 3 All F atoms that contain carbon and are bonded to carbon (C) are sp 3 At least one of the other materials of the patterned coating 210 bonded to the carbon is sp 2 In some non-limiting examples, at least one of the materials of patterned coating 210, which may be, for example, the first material and / or the second material, contains F and sp 3 All F containing carbon and bonded to C are sp 3 At least one of the other materials of the patterned coating 210 bonded to the carbon is sp 2It contains carbon and does not contain F. As a non-limiting example, in any of the foregoing non-limiting examples, "at least one of the materials of patterned coating 210" may correspond to the second material, and "at least one of the other materials of patterned coating 210" may correspond to the first material.

[0361] As will be appreciated by those skilled in the art, F,sp 2 Carbon, sp 3 The presence of materials in the coating that contain carbon, aromatic hydrocarbon moieties, and / or other functional groups or moieties can be detected using a variety of methods known in the art, including, by way of non-limiting example, X-ray Photoelectron Spectroscopy (XPS).

[0362] In some non-limiting examples, at least one of the materials of patterned coating 210, which may be, for example, the first material and / or the second material, contains F and at least one of the other materials of patterned coating 210 contains an aromatic hydrocarbon moiety. In some non-limiting examples, at least one of the materials of patterned coating 210, which may be, for example, the first material and / or the second material, contains F and at least one of the materials of patterned coating 210 does not contain an aromatic hydrocarbon moiety. In some non-limiting examples, at least one of the materials of patterned coating 210, which may be, for example, the first material and / or the second material, contains F and does not contain an aromatic hydrocarbon moiety and at least one of the other materials of patterned coating 210 contains an aromatic hydrocarbon moiety. In some non-limiting examples, at least one of the materials of patterned coating 210, which may be, for example, the first material and / or the second material, contains F and does not contain an aromatic hydrocarbon moiety, and at least one of the other materials of patterned coating 210 contains an aromatic hydrocarbon moiety and does not contain F. Non-limiting examples of aromatic hydrocarbon moieties include substituted polycyclic aromatic hydrocarbon moieties, unsubstituted polycyclic aromatic hydrocarbon moieties, substituted phenyl moieties, and unsubstituted phenyl moieties.

[0363] In some non-limiting examples, at least one of the materials of patterned coating 210, which may be, for example, the first material and / or the second material, contains F and at least one of the other materials of patterned coating 210 contains a polycyclic aromatic hydrocarbon moiety. In some non-limiting examples, at least one of the materials of patterned coating 210, which may be, for example, the first material and / or the second material, contains F and at least one of the materials of patterned coating 210 does not contain a polycyclic aromatic hydrocarbon moiety. In some non-limiting examples, at least one of the materials of patterned coating 210, which may be, for example, the first material and / or the second material, contains F and does not contain a polycyclic aromatic hydrocarbon moiety and at least one of the other materials of patterned coating 210 contains a polycyclic aromatic hydrocarbon moiety. In some non-limiting examples, at least one of the materials of patterned coating 210, which may be, for example, the first material and / or the second material, contains F and does not contain a polycyclic aromatic hydrocarbon moiety, and at least one of the other materials of patterned coating 210 contains a polycyclic aromatic hydrocarbon moiety and does not contain F.

[0364] In some non-limiting examples, at least one of the materials of patterned coating 210, which may be, for example, the first material and / or the second material, contains at least one of a fluorocarbon moiety and a siloxane moiety, and at least one of the other materials of patterned coating 210 contains a polycyclic aromatic hydrocarbon moiety. In some non-limiting examples, at least one of the materials of patterned coating 210, which may be, for example, the first material and / or the second material, contains at least one of a fluorocarbon moiety and a siloxane moiety, and at least one of the materials of patterned coating 210 does not contain a polycyclic aromatic hydrocarbon moiety. In some non-limiting examples, at least one of the materials of patterned coating 210, which may be, for example, the first material and / or the second material, contains at least one of a fluorocarbon moiety and a siloxane moiety, does not contain a polycyclic aromatic hydrocarbon moiety, and at least one of the other materials of patterned coating 210 contains a polycyclic aromatic hydrocarbon moiety. In some non-limiting examples, at least one of the materials of patterned coating 210, which may be, for example, the first material and / or the second material, contains at least one of a fluorocarbon moiety and a siloxane moiety and does not contain a polycyclic aromatic hydrocarbon moiety, and at least one of the other materials of patterned coating 210 contains a polycyclic aromatic hydrocarbon moiety and does not contain a fluorocarbon moiety or a siloxane moiety.

[0365] In some non-limiting examples, at least one of the materials of patterned coating 210, which may be, for example, the first material and / or the second material, contains F and at least one of the other materials of patterned coating 210 contains a phenyl moiety. In some non-limiting examples, at least one of the materials of patterned coating 210, which may be, for example, the first material and / or the second material, contains F and at least one of the materials of patterned coating 210 does not contain a phenyl moiety. In some non-limiting examples, at least one of the materials of patterned coating 210, which may be, for example, the first material and / or the second material, contains F and does not contain a phenyl moiety and at least one of the other materials of patterned coating 210 contains a phenyl moiety. In some non-limiting examples, at least one of the materials of patterned coating 210, which may be, for example, the first material and / or the second material, contains F and does not contain a phenyl moiety and at least one of the other materials of patterned coating 210 contains a phenyl moiety and does not contain F.

[0366] In some non-limiting examples, at least one of the materials of patterned coating 210, which may be, for example, the first material and / or the second material, contains at least one of a fluorocarbon moiety and a siloxane moiety, and at least one of the other materials of patterned coating 210 contains a phenyl moiety. In some non-limiting examples, at least one of the materials of patterned coating 210, which may be, for example, the first material and / or the second material, contains at least one of a fluorocarbon moiety and a siloxane moiety, and at least one of the materials of patterned coating 210 does not contain a phenyl moiety. In some non-limiting examples, at least one of the materials of patterned coating 210, which may be, for example, the first material and / or the second material, contains at least one of a fluorocarbon moiety and a siloxane moiety, does not contain a phenyl moiety, and at least one of the other materials of patterned coating 210 contains a phenyl moiety. In some non-limiting examples, at least one of the materials of patterned coating 210, which may be, for example, the first material and / or the second material, contains at least one of a fluorocarbon moiety and a siloxane moiety and does not contain a phenyl moiety, and at least one of the other materials of patterned coating 210 contains a phenyl moiety and does not contain a fluorocarbon moiety or a siloxane moiety.

[0367] Generally, the molecular structures and / or molecular compositions of the materials of patterned coating 210, which may be, for example, a first material and a second material, differ from one another. In some non-limiting examples, the materials may be selected to have at least one characteristic that is substantially similar to or different from one another. Non-limiting examples of such traits and / or characteristics include: (1) monomer molecular structure, monomer backbone, and / or functional groups; (2) presence of common elements; (3) similarity of molecular structure; (4) characteristic surface energy; (5) refractive index; (6) molecular weight; and / or (7) thermal properties, including, but not limited to, melting temperature, sublimation temperature, glass transition temperature, and / or thermal decomposition temperature.

[0368] Characteristic surface energy, as used herein, particularly with respect to materials, generally refers to the surface energy determined from such materials. By way of example, characteristic surface energy may be measured from a surface formed by a material deposited and / or coated in a thin film form. Various methods and theories are known for determining the surface energy of solids. For example, surface energy can be calculated or derived based on a series of contact angle measurements in which various liquids are brought into contact with the solid surface and the contact angle between the liquid-vapor interface and the surface is measured. In some non-limiting examples, the surface energy of a solid surface is equal to the surface tension of the liquid with the highest surface tension that completely wets the surface. For example, a Zisman plot can be used to determine the highest surface tension value that results in complete wetting of the surface (i.e., a contact angle of 0°).

[0369] The sublimation temperature of a material can be determined using various methods known in the art. As a non-limiting example, the sublimation temperature can be determined by heating the material in a crucible under high vacuum and determining the temperature required to observe the initiation of deposition of the material on a quartz crystal microbalance mounted at a fixed distance from the source. In some non-limiting examples, the quartz crystal microbalance can be mounted approximately 65 cm from the source for purposes of determining the sublimation temperature. In some non-limiting examples, the sublimation temperature can be determined by heating the material in a crucible under high vacuum and measuring the temperature required to observe a specific deposition rate, for example, 0.1 Å / sec, on a quartz crystal microbalance mounted at a fixed distance from the crucible, for example, 65 cm from the source. In some non-limiting examples, the sublimation temperature can be determined by heating the material in a crucible under high vacuum and determining the temperature required to reach the threshold vapor pressure of the material. As a non-limiting example, the threshold vapor pressure can be approximately 10E. -4 Torr or 10E -5 In some non-limiting examples, the sublimation temperature of the material may be about 10E -4The deposition rate can be determined by heating the material in a vapor source in a high vacuum environment of 100 Torr and measuring the temperature required to vaporize the material, thus producing a vapor flux sufficient to deposit the material at a rate of about 0.1 Angstroms / second onto a surface positioned about 65 cm from the vapor source. As a non-limiting example, the deposition rate can be measured using a quartz crystal microbalance positioned about 65 cm from the vapor source.

[0370] Although some non-limiting examples have been described herein with reference to a first material and a second material, it should be understood that the patterned coating may further include one, two, three, or more additional materials, and the descriptions regarding the molecular structure and / or properties of the first material, second material, first oligomer, and / or second oligomer may be applicable with respect to the additional materials that may be contained within the patterned coating.

[0371] In some non-limiting examples, at least one of the first and second materials of the patterned coating 210 is an oligomer. As used herein, an oligomer generally refers to a material comprising at least two monomer units or monomers. As will be understood by those skilled in the art, an oligomer may differ from a polymer in at least one aspect, including, but not limited to, (1) the number of monomer units contained therein, (2) molecular weight, and (3) other material properties and / or characteristics. As non-limiting examples, further descriptions of polymers and oligomers can be found in Naka K. (2014) Monomers, Oligomers, Polymers, and Macromolecules (Overview). and Kobayashi S., Mullen K. (eds) Encyclopedia of Polymeric Nanomaterials. Springer, Berlin, Heidelberg.

[0372] An oligomer or polymer generally comprises monomeric units chemically bonded together to form a molecule. Such monomeric units may be substantially identical to one another, such that the molecule is primarily formed by repeating monomeric units, or the molecule may comprise two or more different monomeric units. Additionally, the molecule may comprise one or more terminal units that may be different from the monomeric units of the molecule. An oligomer or polymer may be linear, branched, cyclic, cyclolinear, and / or crosslinked. An oligomer or polymer may comprise two or more different monomeric units arranged in a repeating pattern and / or in alternating blocks of different monomeric units.

[0373] In some non-limiting examples, at least one of the first material and the second material is an oligomer. In some further non-limiting examples, the first material includes a first oligomer and the second material includes a second oligomer. Each of the first oligomer and the second oligomer includes at least two monomers.

[0374] In some non-limiting examples, at least a portion of the molecular structure of at least one of the materials of patterned coating 210, which may be, for example, the first material and / or the second material, is represented by the following formula: (Mon) n Formula (I) In the formula, Mon represents a monomer, and n is an integer of 2 or more.

[0375] In some non-limiting examples, n is an integer from 2 to 100, from 2 to 50, from 3 to 20, from 3 to 15, from 3 to 10, or from 3 to 7.

[0376] In some non-limiting examples, the molecular structures of the first and second materials of patterned coating 210 are each independently represented by Formula (I). As a non-limiting example, the monomer and / or n of the first material can be different from that of the second material. In some non-limiting examples, n of the first material is the same as n of the second material. In some non-limiting examples, n of the first material is different from n of the second material. In some non-limiting examples, the first and second materials are oligomers.

[0377] In some non-limiting examples, the monomer comprises at least one of fluorine and silicon.

[0378] In some non-limiting examples, the monomer comprises a functional group. In some non-limiting examples, at least one functional group of the monomer has low surface tension. In some non-limiting examples, at least one functional group of the monomer comprises at least one of fluorine and silicon. Non-limiting examples of such functional groups include fluorocarbon groups and siloxane groups. In some non-limiting examples, the monomer comprises a silsesquioxane group.

[0379] For example, the surface tension attributable to portions of a molecular structure, including monomers, monomer backbone units, linkers, and / or functional groups, can be determined using various methods known in the art. Non-limiting examples of such methods include the use of a parachute. Further description of parachutes is found, for example, in "Conception and Significance of the Parachute," Nature. 196:890-891. In some non-limiting examples, at least one functional group of the monomer has a surface tension of less than 25 dynes / cm, less than about 21 dynes / cm, less than about 20 dynes / cm, less than about 19 dynes / cm, less than about 18 dynes / cm, less than about 17 dynes / cm, less than about 16 dynes / cm, less than about 15 dynes / cm, less than about 14 dynes / cm, less than about 13 dynes / cm, less than about 12 dynes / cm, less than about 11 dynes / cm, or less than about 10 dynes / cm.

[0380] In some non-limiting examples, the monomer comprises at least one of a CF2 and a CF2H moiety. In some non-limiting examples, the monomer comprises at least one of a CF2 and a CF3 moiety. In some non-limiting examples, the monomer comprises a CH2CF3 moiety. In some non-limiting examples, the monomer comprises at least one of carbon and oxygen. In some non-limiting examples, the monomer comprises a fluorocarbon monomer. In some non-limiting examples, the monomer comprises a vinyl fluoride moiety, a vinylidene fluoride moiety, a tetrafluoroethylene moiety, a chlorotrifluoroethylene moiety, a hexafluoropropylene moiety, and / or a fluorinated 1,3-dioxole moiety.

[0381] In some non-limiting examples, the monomer comprises a monomer backbone and a functional group. In some non-limiting examples, the functional group is attached to the monomer backbone either directly or through a linker group. In some non-limiting examples, the monomer comprises a linker group, and the linker group is attached to the monomer backbone and the functional group. In some non-limiting examples, the monomer may comprise two or more functional groups, which may be the same or different from one another. In such examples, each functional group may be attached to the monomer backbone either directly or through a linker group. In some non-limiting examples where two or more functional groups are present, two or more linker groups may also be present.

[0382] In some non-limiting examples, the molecular structure of at least one of the materials of patterned coating 210, which may be the first material and / or the second material, includes two or more different monomers. In other words, such molecular structure includes monomer species having different molecular compositions and / or molecular structures from one another. Non-limiting examples of such molecular structures include those represented by the following formula: (Mon A ) k (Mon B )m (Mon A ) k (Mon A ) m(Mon C ) o Formula (I-1) Formula (I-2) During the ceremony, Mon A , Mon B , and Mon C Each represents a monomer species, and k, m, and o each represent an integer greater than 2. In some non-limiting examples, k, m, and o each represent an integer from 2 to 100, 2 to 50, 3 to 20, 3 to 15, 3 to 10, or 3 to 7. Various non-limiting examples and descriptions of the monomer Mon are given below. A , Mon B , and Mon C It is understood that the above may be applicable with respect to each of the above.

[0383] In some non-limiting examples, the monomer is represented by the following formula: M-(LR x ) y formula ( II ) In the formula, M represents a monomer backbone unit, L represents a linker group, R represents a functional group, x is an integer of 1 to 4, and y is an integer of 1 to 3.

[0384] In some non-limiting examples, the linker group is represented by at least one of a single bond, O, N, NH, C, CH, CH2, and S.

[0385] Various non-limiting examples of functional groups described herein include those of the formula ( II )The above-mentioned formulas may be applied to R in the formula (I). In some non-limiting examples, the functional group R comprises an oligomeric unit, and the oligomeric unit further comprises at least two functional monomeric units. As a non-limiting example, the functional monomeric unit can be CH2 and / or CF2. In some non-limiting examples, the functional group comprises a CH2CF3 moiety. For example, such functional monomeric units can be linked together to form alkyl and / or fluoroalkyl oligomeric units. In some non-limiting examples, the oligomeric unit further comprises a functional terminal unit. As a non-limiting example, the functional terminal unit can be arranged at the end of the oligomeric unit and bonded to the functional monomeric unit. In some non-limiting examples, the end at which the functional terminal unit is arranged can correspond to a portion of the functional group distal to the monomer backbone unit. Non-limiting examples of functional terminal units include CF2H and CF3.

[0386] In some non-limiting examples, the monomeric backbone unit M has a high surface tension. In some non-limiting examples, the monomeric backbone unit has a higher surface tension than at least one of the functional groups R attached thereto. In some further non-limiting examples, the monomeric backbone unit has a higher surface tension than any of the functional groups R attached thereto.

[0387] In some non-limiting examples, the monomer backbone unit has a surface tension of greater than about 25 dynes / cm, greater than about 30 dynes / cm, greater than about 40 dynes / cm, greater than about 50 dynes / cm, greater than about 75 dynes / cm, greater than about 100 dynes / cm, greater than about 150 dynes / cm, greater than about 200 dynes / cm, greater than about 250 dynes / cm, greater than about 500 dynes / cm, greater than about 1,000 dynes / cm, greater than about 1,500 dynes / cm, or greater than about 2,000 dynes / cm.

[0388] In some non-limiting examples, the monomer backbone unit includes phosphorus (P) and nitrogen (N). A non-limiting example of such a monomer backbone unit is a phosphazene, where a double bond exists between P and N and can be represented as "NP" or "N=P". In some non-limiting examples, the monomer backbone unit includes silicon (Si) and oxygen (O). A non-limiting example of such a monomer backbone unit is a silsesquioxane, which is a SiO 3 / 2 It can be expressed as:

[0389] In some non-limiting examples, at least a portion of the molecular structure of at least one of the materials of patterned coating 210, which may be, for example, the first material and / or the second material, is represented by the following formula: (NP-(LR x ) y ) n Formula (III)

[0390] In formula (III), NP represents a phosphazene monomer backbone unit, L represents a linker group, R represents a functional group, x is an integer of 1 to 4, y is an integer of 1 to 3, and n is an integer of 2 or more.

[0391] In some non-limiting examples, the molecular structure of the first material and / or the second material is represented by Formula (III). In some further non-limiting examples, at least one of the first material and the second material is a cyclophosphazene. In some further non-limiting examples, the molecular structure of the cyclophosphazene is represented by Formula (III).

[0392] In some non-limiting examples, L represents oxygen, x is 1, and R represents a fluoroalkyl group. In some non-limiting examples, at least a portion of the molecular structure of at least one of the materials of patterned coating 210, which may be, for example, the first material and / or the second material, is represented by the following formula: (NP(OR f )2) n Formula (IV) In the formula, R frepresents a fluoroalkyl group, and n is an integer of 3 to 7.

[0393] In some non-limiting examples, the fluoroalkyl group comprises at least one of a CF2 group, a CF2H group, a CH2CF3 group, and a CF3 group. In some non-limiting examples, the fluoroalkyl group is represented by the following formula:

[0394] [ka] In the formula, p is an integer of 1 to 5. q is an integer of 6 to 20, and Z is hydrogen or fluorine. In some non-limiting examples, p is 1 and q is an integer of 6 to 20.

[0395] In some non-limiting examples, the fluoroalkyl group R in formula (IV) f is represented by formula (V).

[0396] In some non-limiting examples, at least a portion of the molecular structure of at least one of the materials of patterned coating 210, which may be, for example, the first material and / or the second material, is represented by the following formula: (SiO 3 / 2 -(LR)) n Formula (VI)

[0397] In formula (VI), L represents a linker group, R represents a functional group, and n is an integer of 6 to 12.

[0398] In some non-limiting embodiments, L represents the presence of a single bond, O, a substituted alkyl, or an unsubstituted alkyl. In some non-limiting examples, n is 8, 10, or 12. In some non-limiting examples, R comprises a functional group having low surface tension. In some non-limiting examples, R comprises an F-containing group and / or an Si-containing group. In some non-limiting examples, R comprises a fluorocarbon group and / or a siloxane-containing group. In some non-limiting examples, R comprises a CF2 group and / or a CF2H group. In some non-limiting examples, R comprises a CF2 and / or CF3 group. In some non-limiting examples, R comprises a CH2CF3 group. In some non-limiting examples, the material represented by Formula (VI) is a polyoctahedral silsesquioxane.

[0399] In some non-limiting examples, at least a portion of the molecular structure of at least one of the materials of patterned coating 210, which may be, for example, the first material and / or the second material, is represented by the following formula: (SiO 3 / 2 -R f ) n Formula (VII) In the formula, n represents an integer of 6 to 12, and Rf represents a fluoroalkyl group. In some non-limiting examples, n is 8, 10, or 12. In some non-limiting examples, Rf comprises a functional group having low surface tension. In some non-limiting examples, Rf comprises a CF2 moiety and / or a CF2H moiety. In some non-limiting examples, Rf comprises a CF2 moiety and / or a CF3 moiety. In some non-limiting examples, Rf comprises a CH2CF3 moiety. In some non-limiting examples, the material represented by Formula (VII) is a polyoctahedral silsesquioxane.

[0400] In some non-limiting examples, the fluoroalkyl group R in formula (VII) f is represented by formula (V).

[0401] In some non-limiting examples, at least a portion of the molecular structure of at least one of the materials of patterned coating 210, which may be, for example, the first material and / or the second material, is represented by the following formula: (SiO 3 / 2 -(CH2) x (CF3)) n Formula (VIII)

[0402] In formula (VIII), x is an integer from 1 to 5, and n is an integer from 6 to 12. In some non-limiting examples, n is 8, 10, or 12. In some non-limiting examples, the compound represented by formula (VIII) is a polyoctahedral silsesquioxane.

[0403] In some non-limiting examples, the functional group R and / or the fluoroalkyl group R f may be independently selected at each occurrence of such a group in any of the foregoing formulas. It will also be understood that any of the foregoing formulas may represent a partial structure of a compound, and that additional groups or moieties may be present that are not explicitly shown in the formula above. It will also be understood that the various formulas provided in this application may represent linear, branched, cyclic, cyclo-linear, and / or bridged structures.

[0404] In some non-limiting examples, the patterned coating 210 includes at least one material represented by at least one of the following formulas (I), (I-1), (I-2), (II), (III), (IV), (VI), (VII), and (VIII) and at least one material exhibiting at least one of the following characteristics: (a) comprising an aromatic hydrocarbon moiety; (b) sp 2 (c) comprise carbon; (d) comprise a phenyl moiety; (e) have a characteristic surface energy greater than about 20 dynes / cm; and (f) exhibit photoluminescence, including, by way of non-limiting example, exhibiting photoluminescence at wavelengths greater than about 365 nm when irradiated with excitation radiation having a wavelength of about 365 nm.

[0405] In some non-limiting examples, the patterned coating can further include a third material different from the first material and the second material, hi some non-limiting examples, the third material includes a monomer in common with at least one of the first material and the second material.

[0406] In some non-limiting examples, the difference in sublimation temperatures of two or more materials of patterned coating 210, including but not limited to such a difference between a first material and a second material, is about 5° C., about 10° C., about 15° C., about 20° C., about 30° C., about 40° C., or about 50° C. or less. In some non-limiting examples, at least one of the materials of patterned coating 210, which may be, for example, the first material and / or the second material, comprises at least one of F and Si, and the sublimation temperatures of the materials of patterned coating 210 differ by about 5° C., about 10° C., about 15° C., about 20° C., about 25° C., about 40° C., or about 50° C. or less. In some non-limiting examples, at least one of the materials of patterned coating 210, which may be, for example, the first material and / or the second material, includes at least one of a fluorocarbon moiety and a siloxane moiety, and the sublimation temperatures of the materials of patterned coating 210 differ by no more than about 5°C, about 10°C, about 15°C, about 20°C, about 25°C, about 40°C, or about 50°C.

[0407] In some non-limiting examples, the difference in melting temperatures of two or more materials of patterned coating 210, including but not limited to, such difference between a first NIC material and a second NIC material, is about 5° C., about 10° C., about 15° C., about 20° C., about 30° C., about 40° C., or about 50° C. or less. In some non-limiting examples, at least one of the materials of patterned coating 210, which may be, for example, the first material and / or the second material, comprises at least one of F and Si, and the melting temperatures of the materials of patterned coating 210 differ by about 5° C., about 10° C., about 15° C., about 20° C., about 25° C., about 40° C., or about 50° C. or less. In some non-limiting examples, at least one of the materials of patterned coating 210, which may be, for example, the first material and / or the second material, includes at least one of a fluorocarbon moiety and a siloxane moiety, and the melting temperatures of the materials of patterned coating 210 differ by no more than about 5°C, about 10°C, about 15°C, about 20°C, about 25°C, about 40°C, or about 50°C.

[0408] In some non-limiting examples, at least one of the materials of patterned coating 210, which may be, for example, the first material and / or the second material, has a low characteristic surface energy. In some non-limiting examples, at least one of the materials of patterned coating 210, which may be, for example, the first material and / or the second material, has a low characteristic surface energy and at least one of the materials of patterned coating 210 contains at least one of F and Si. In some non-limiting examples, at least one of the materials of patterned coating 210, which may be, for example, the first material and / or the second material, has a low characteristic surface energy and contains at least one of F and Si, and at least one of the other materials of patterned coating 210 has a high characteristic surface energy. In some non-limiting examples, the presence of F and Si may be explained by the presence of fluorocarbon moieties and siloxane moieties, respectively. As a non-limiting example, at least one of the materials, which may correspond to the second material, may have a low characteristic surface energy of about 10-20 dynes / cm, 12-20 dynes / cm, 15-20 dynes / cm, or 17-19 dynes / cm, and another material, which may correspond to the first material, may have a high characteristic surface energy of about 20-100 dynes / cm, 20-50 dynes / cm, or 25-45 dynes / cm. In some non-limiting examples, at least one of the materials contains at least one of F and Si. As a non-limiting example, the second material may contain at least one of F and Si.

[0409] In some non-limiting examples, at least one of the materials of patterned coating 210, which may be, for example, the second material, has a low characteristic surface energy of less than about 20 dynes / cm and includes at least one of F and / or Si, and at least one of the other materials of patterned coating 210, which may be, for example, the first material, has a characteristic surface energy of greater than about 20 dynes / cm.

[0410] In some non-limiting examples, at least one of the materials of patterned coating 210 (which may be, for example, the second material) has a low characteristic surface energy of less than about 20 dynes / cm and includes at least one of a fluorocarbon moiety and a siloxane moiety, and at least one of the other materials of patterned coating 210 (which may be, for example, the first material) has a characteristic surface energy of greater than about 20 dynes / cm.

[0411] In some non-limiting examples, the surface energy of each of the two or more materials of patterned coating 210, including but not limited to the surface energies of the first material and the second material, is less than about 25 dynes / cm, less than about 21 dynes / cm, less than about 20 dynes / cm, less than about 19 dynes / cm, less than about 18 dynes / cm, less than about 17 dynes / cm, less than about 16 dynes / cm, less than about 15 dynes / cm, less than about 14 dynes / cm, less than about 13 dynes / cm, less than about 12 dynes / cm, less than about 11 dynes / cm, or less than about 10 dynes / cm.

[0412] In some non-limiting examples, at least one of the materials of patterned coating 210, including but not limited to the first material and the second material, has a refractive index at wavelengths of 500 nm and / or 460 nm that is less than about 1.5, less than about 1.45, less than about 1.44, less than about 1.43, less than about 1.42, or less than about 1.41. In some non-limiting examples, patterned coating 210 includes at least one material that exhibits photoluminescence, and patterned coating 210 has a refractive index at wavelengths of 500 nm and / or 460 nm that is less than about 1.5, less than about 1.45, less than about 1.44, less than about 1.43, less than about 1.42, or less than about 1.41.

[0413] In some non-limiting examples, the molecular weight of at least one of the materials of patterned coating 210, including but not limited to the molecular weight of the first material and the second material, is greater than about 750, greater than about 1,000, greater than about 1,500, greater than about 2,000, greater than about 2,500, or greater than about 3,000.

[0414] In some non-limiting examples, the molecular weight of at least one of the materials of patterned coating 210, including but not limited to the molecular weights of the first material and the second material, is less than about 10,000, less than about 7,500, or less than about 5,000.

[0415] In some non-limiting examples, the NIC includes two or more materials that exhibit similar thermal properties to one another, and at least one of the materials exhibits photoluminescence. In some non-limiting examples, the patterned coating includes two or more materials with similar thermal properties to one another, and at least one of the materials exhibits photoluminescence, and at least one of the materials, or all of the materials, includes fluorine (F) and / or silicon (Si). In some non-limiting examples, the patterned coating includes two or more materials with similar thermal properties to one another, and at least one of the materials exhibits photoluminescence at wavelengths greater than 365 nm when excited by radiation having an excitation wavelength of 365 nm, and at least one of the materials, or all of the materials, includes fluorine (F) and / or silicon (Si). In some non-limiting examples, the similar thermal properties may include, but are not limited to, the melting temperature and / or sublimation temperature of the materials.

[0416] In some non-limiting examples, the patterned coating includes two or more materials having at least one common element or at least one common substructure, and at least one of the materials exhibits photoluminescence. In some non-limiting examples, at least one of the materials, or all of the materials, includes fluorine (F) and / or silicon (Si). In some non-limiting examples, the patterned coating includes two or more materials having similar thermal properties to one another, and at least one of the materials exhibits photoluminescence at wavelengths greater than 365 nm when excited by radiation having an excitation wavelength of 365 nm, and at least one of the materials, or all of the materials, includes fluorine (F) and / or silicon (Si). In some non-limiting examples, the at least one common element includes, but is not limited to, fluorine (F) and / or silicon (Si). In some non-limiting examples, the at least one common substructure includes, but is not limited to, fluorocarbon, fluoroalkyl, and / or siloxyl.

[0417] In one aspect, a method for fabricating an optoelectronic device is provided. The method includes: (i) depositing a nucleation inhibitor coating (NIC) on a first layer surface of the device at a first portion of a side of the device; and (ii) depositing a conductive coating on a second layer surface of the device at a second portion of the side of the device. An initial adhesion probability for forming a conductive coating on the surface of the patterned coating at the first portion is substantially lower than an initial adhesion probability for forming a conductive coating on the surface at the second portion, such that the surface of the patterned coating at the first portion is substantially devoid of the conductive coating. The NIC deposited on the first layer surface of the device comprises a first material and a second material.

[0418] In some non-limiting examples, depositing a patterned coating on a first layer surface of the device includes providing a mixture containing two or more materials and depositing the mixture on the first layer surface of the device to form a NIC thereon. In some non-limiting examples, the mixture contains a first material and a second material. In such non-limiting examples, both the first material and the second material are deposited on the first layer surface to form a patterned coating thereon.

[0419] In some non-limiting examples, a mixture containing two or more patterned coating materials is deposited on the first layer surface of the device by a physical vapor deposition process. Non-limiting examples of such deposition processes include thermal evaporation. In some non-limiting examples, the patterned coating is formed by evaporating the mixture from a common evaporation source and depositing the mixture on the first layer surface of the device. In other words, as a non-limiting example, a mixture containing a first material and a second material may be placed in a common crucible and / or evaporation source to heat the mixture under vacuum. Upon reaching or exceeding the evaporation temperature of the materials, a vapor flux generated from the mixture is directed toward the first layer surface of the device, causing the deposition of the patterned coating thereon.

[0420] In some non-limiting examples, the patterned coating is deposited by co-evaporation of a first material and a second material. In some further non-limiting examples, a first material is evaporated from a first crucible and / or a first evaporation source, and a second material is simultaneously evaporated from a second crucible and / or a second evaporation source, such that a mixture is formed in the vapor phase and co-deposited on the first layer surface to provide a patterned coating thereon.

[0421] The following experiment was performed to evaluate the properties of certain exemplary patterned coatings containing at least two materials.

[0422] A series of samples were fabricated by depositing in vacuum an approximately 20 nm thick layer of an organic material typically used as a hole transport layer material, followed by depositing on top of the organic material layer nucleation modification coatings with various compositions as summarized in the table below.

[0423] [Table 9]

[0424] In this example, the NIC material was selected such that when deposited as, for example, a thin film, the NIC material exhibits a low initial sticking probability relative to the material of the conductive coating, which may include, for example, Ag and / or Yb.

[0425] In this example, PL material 1 and PL material 2 were selected such that, when deposited, for example, as a thin film, each of PL material 1 and PL material 2 exhibits photoluminescence detectable by standard optical measurement techniques (e.g., fluorescence microscopy).

[0426] In the above table, Sample 1 is a comparative sample in which a nucleation-modified coating was provided by depositing an NIC material. Sample 2 is an example sample in which a nucleation-modified coating was provided by co-depositing an NIC material and PL material 1 together to form a coating containing PL material 1 at a concentration of 0.5% by volume. Sample 3 is an example sample in which a nucleation-modified coating was provided by co-depositing an NIC material and PL material 2 together to form a coating containing PL material 2 at a concentration of 0.5% by volume. Sample 4 is a comparative sample in which a nucleation-modified coating was provided by depositing PL material 1. Sample 5 is a comparative sample in which a nucleation-modified coating was provided by depositing PL material 2. Sample 6 is a comparative sample in which a nucleation-modified coating was not provided on the organic material layer.

[0427] The photoluminescence (PL) response of each of Sample 1, Sample 2, Sample 3, and Sample 6 was measured, and Fig. 36The PL intensities of Sample 1 and Sample 6 were observed to be identical, thus indicating that the NIC materials do not exhibit photoluminescence in the detected wavelength range. 36 For simplicity, the PL intensity of Sample 6 is not plotted. For each of Samples 2 and 3, photoluminescence was detected at wavelengths of approximately 500 nm to approximately 600 nm.

[0428] Each of Samples 1-6 was then subjected to open-mask deposition of Yb followed by Ag. Specifically, the surface of the nucleation-modified coating formed by the above materials was subjected to open-mask deposition of Yb followed by Ag. More specifically, each sample was exposed to a Yb vapor flux until a reference thickness of approximately 1 nm was reached, and then to an Ag vapor flux until a reference thickness of approximately 12 nm was reached. Once the samples were fabricated, optical transmittance measurements were performed to determine the relative amounts of Yb and / or Ag deposited on the surface of the nucleation-modified coating. As will be appreciated, samples with relatively small amounts of metal present thereon or no metal present thereon are substantially transparent, while samples with metal deposited thereon (especially as a closed film) generally exhibit substantially lower optical transmittance. Thus, the relative performance of various exemplary coatings as patterned coatings 210 may be assessed by measuring the optical transmission through the sample, which directly correlates to the amount or thickness of the metal coating deposited thereon from the Yb and / or Ag deposition. The reduction in light transmittance at a wavelength of 460 nm after exposing each sample to Ag vapor flux was measured and is summarized in the table below.

[0429] [Table 10]

[0430] Specifically, the percent transmittance reduction for each sample in the table above was determined by measuring the light transmittance through the sample before and after exposure to Yb and Ag vapor fluxes and expressing the reduction in light transmittance as a percentage.

[0431] As can be seen, Samples 1, 2, and 3 exhibited relatively low transmittance reductions of less than 2%, or in the case of Samples 1 and 3, less than 1%. Thus, it is observed that the nucleation-modified coatings provided on these samples acted as NICs. Samples 4, 5, and 6 exhibited transmittance reductions of 43%, 47%, and 45%, respectively. Thus, the nucleation-modified coatings provided on these samples acted as NPCs.

[0432] Additionally, Sample 1, in which the NIC contained substantially only NIC material, was found to exhibit no photoluminescence. However, Samples 2 and 3, in which the NIC contained PL material 1 and PL material 2, respectively, were found to exhibit photoluminescence while also functioning as NICs by providing a surface with a low initial adhesion probability for the conductive coating material.

[0433] As used in this and other examples described herein, the reference layer thickness refers to the layer thickness of a metal coating deposited on a reference surface exhibiting a high initial sticking probability S (e.g., a surface having an initial sticking probability S of about and / or close to 1.0). Specifically, in these examples, the reference surface was a surface of a quartz crystal positioned in a deposition chamber to monitor the deposition rate and the reference layer thickness. In other words, the reference layer thickness does not refer to the actual thickness of the metal coating deposited on the target surface (i.e., the surface of the patterned coating 210). Rather, the reference layer thickness refers to the layer thickness of a metal coating deposited on a reference surface (i.e., the surface of the quartz crystal) when the target surface and the reference surface are exposed to the same vapor flux of the metal material for the same deposition period. As will be appreciated, if the target surface and the reference surface are not exposed to the same vapor flux simultaneously during deposition, the reference thickness can be determined and monitored using appropriate tooling factors.

[0434] sedimentary layer In some non-limiting examples, in the second portion 402 of the side of the device 1000, the deposition layer 1030 including the deposition material 1231 can be disposed as a closed coating 1040 on the underlying exposed layer surface 11, including but not limited to the substrate 10.

[0435] In some non-limiting examples, the deposition layer 1030 can include a deposition material 1231 .

[0436] In some non-limiting examples, the deposition material 1231 may include an element selected from at least one of potassium (K), sodium (Na), lithium (Li), barium (Ba), cesium (Cs), Yb, Ag, gold (Au), Cu, aluminum (Al), Mg, Zn, Cd, tin (Sn), or yttrium (Y). In some non-limiting examples, the element may include at least one of K, Na, Li, Ba, Cs, Yb, Ag, Au, Cu, Al, and / or Mg. In some non-limiting examples, the element may include at least one of Cu, Ag, and / or Au. In some non-limiting examples, the element may be Cu. In some non-limiting examples, the element may be Al. In some non-limiting examples, the element may include at least one of Mg, Zn, Cd, or Yb. In some non-limiting examples, the element may include at least one of Mg, Ag, Al, Yb, or Li. In some non-limiting examples, the element may include at least one of Mg, Ag, or Yb. In some non-limiting examples, the element may include at least one of Mg or Ag. In some non-limiting examples, the element may be Ag.

[0437] In some non-limiting examples, the deposition material 1231 may be and / or include a pure metal. In some non-limiting examples, the deposition material 1231 may be at least one of pure Ag or substantially pure Ag. In some non-limiting examples, the substantially pure Ag may have a purity of at least one of about 95%, 99%, 99.9%, 99.99%, 99.999%, or 99.9995%. In some non-limiting examples, the deposition material 1231 may be at least one of pure Mg or substantially pure Mg. In some non-limiting examples, the substantially pure Mg may have a purity of at least one of about 95%, 99%, 99.9%, 99.99%, 99.999%, or 99.9995%.

[0438] In some non-limiting examples, the deposition material 1231 may include an alloy. In some non-limiting examples, the alloy may be at least one of an Ag-containing alloy, an Mg-containing alloy, or an AgMg-containing alloy. In some non-limiting examples, the AgMg-containing alloy may have an alloy composition that may range from about 1:10 (Ag:Mg) to about 10:1 by volume.

[0439] In some non-limiting examples, the deposition material 1231 may include other metals in place of and / or in combination with Ag. In some non-limiting examples, the deposition material 1231 may include an alloy of Ag and at least one other metal. In some non-limiting examples, the deposition material 1231 may include an alloy of Ag and at least one of Mg or Yb. In some non-limiting examples, such an alloy may be a binary alloy having a composition of about 5-95% Ag by volume, with the remainder being the other metal. In some non-limiting examples, the deposition material 1231 may include Ag and Mg. In some non-limiting examples, the deposition material 1231 may include an Ag:Mg alloy having a composition of about 1:10 to 10:1 by volume. In some non-limiting examples, the deposition material 1231 may include Ag and Yb. In some non-limiting examples, the deposition material 1231 may include a Yb:Ag alloy having a composition of about 1:20 to 10:1 by volume. In some non-limiting examples, the deposition material 1231 may include Mg and Yb. In some non-limiting examples, the deposition material 1231 may include a Mg:Yb alloy. In some non-limiting examples, the deposition material 1231 may include Ag, Mg, and Yb. In some non-limiting examples, the deposition layer 1030 may include a Ag:Mg:Yb alloy.

[0440] In some non-limiting examples, the deposited layer 1030 may include at least one additional element. In some non-limiting examples, such additional element may be a non-metallic element. In some non-limiting examples, the non-metallic element may be at least one of O, S, N, or C. Those skilled in the art will appreciate that in some non-limiting examples, such additional elements may be incorporated into the deposited layer 1030 as contaminants due to the presence of such additional elements in the source material, the equipment used for deposition, and / or the vacuum chamber environment. In some non-limiting examples, the concentration of such additional elements may be limited below a threshold concentration. In some non-limiting examples, such additional elements may form compounds with other elements of the deposited layer 1030. In some non-limiting examples, the concentration of non-metallic elements in the deposition material 1231 can be less than or equal to at least one of about 1%, about 0.1%, about 0.01%, about 0.001%, about 0.0001%, about 0.00001%, about 0.000001%, or about 0.0000001%. In some non-limiting examples, the deposition layer 1030 can have a composition in which the total amount of O and C therein can be less than or equal to at least one of about 10%, about 5%, about 1%, about 0.1%, about 0.01%, about 0.001%, about 0.0001%, about 0.00001%, about 0.000001%, or about 0.0000001%.

[0441] It has now been somewhat surprisingly discovered that reducing the concentration of certain non-metallic elements in the deposition layer 1030 can facilitate selective deposition of the deposition layer 1030, particularly where the deposition layer 1030 may be substantially composed of a metal and / or metal alloy. Without wishing to be bound by any particular theory, it may be hypothesized that certain non-metallic elements, such as O or C, as non-limiting examples, when present in the vapor flux 1232 of the deposition layer 1030 and / or in the deposition chamber and / or in the environment, may deposit on the surface of the patterned coating 210 and act as nucleation sites for the metal elements of the deposition layer 1030. It may be hypothesized that reducing the concentration of such non-metallic elements that can act as nucleation sites can facilitate reducing the amount of deposition material 1231 deposited on the exposed layer surface 11 of the patterned coating 210.

[0442] In some non-limiting examples, the deposition material 1231 may be deposited on a metal-containing underlayer, hi some non-limiting examples, the deposition material 1231 and the underlying underlayer may comprise a common metal.

[0443] In some non-limiting examples, the deposition layer 1030 can include multiple layers of deposition material 1231. In some non-limiting examples, the deposition material 1231 of a first layer of the multiple layers can be different from the deposition material 1231 of a second layer of the multiple layers. In some non-limiting examples, the deposition layer 1030 can include a multi-layer coating. In some non-limiting examples, such a multi-layer coating can be at least one of Yb / Ag, Yb / Mg, Yb / Mg:Ag, Yb / Yb:Ag, Yb / Ag / Mg, or Yb / Mg / Ag.

[0444] In some non-limiting examples, the deposition material 1231 may include a metal having a bond dissociation energy of less than or equal to at least one of about 300 kJ / mol, about 200 kJ / mol, about 165 kJ / mol, about 150 kJ / mol, about 100 kJ / mol, about 50 kJ / mol, or about 20 kJ / mol.

[0445] In some non-limiting examples, the deposition material 1231 can include a metal having an electronegativity less than or equal to at least one of about 1.4, about 1.3, or about 1.2.

[0446] In some non-limiting examples, the sheet resistance of the deposited layer 1030 may generally correspond to the sheet resistance of the deposited layer 1030 measured or determined in isolation from other components, layers, and / or portions of the device 100. In some non-limiting examples, the deposited layer 1030 may be formed as a thin film. Thus, in some non-limiting examples, the characteristic sheet resistance of the deposited layer 1030 may be determined and / or calculated based on the composition, thickness, and / or morphology of such a thin film. In some non-limiting examples, the sheet resistance may be less than or equal to at least one of about 10 Ω / □, about 5 Ω / □, about 1 Ω / □, about 0.5 Ω / □, about 0.2 Ω / □, or about 0.1 Ω / □.

[0447] In some non-limiting examples, the deposition layer 1030 may be arranged in a pattern that may be defined by at least one region that substantially lacks a closed coating 1040 of the deposition layer 1030. In some non-limiting examples, the at least one region may separate the deposition layer 1030 into a plurality of separate pieces thereof. In some non-limiting examples, each separate piece of the deposition layer 1030 may be a separate second portion 402. In some non-limiting examples, the plurality of separate pieces of the deposition layer 1030 may be physically separated from one another on their sides. In some non-limiting examples, at least two of such a plurality of separate pieces of the deposition layer 1030 may be electrically coupled. In some non-limiting examples, at least two of such a plurality of separate pieces of the deposition layer 1030 may each be electrically coupled to a common conductive layer or coating, including but not limited to an underlying surface, to enable current flow therebetween. In some non-limiting examples, at least two of such a plurality of separate pieces of the deposition layer 1030 may be electrically insulated from one another.

[0448] Selective Deposition Using Patterned Coatings FIG. 11 is an illustrative schematic diagram showing a non-limiting example of an evaporation deposition process, generally designated 1100, in a chamber 1110 for selectively depositing a patterned coating 210 onto a first portion 401 of an underlying exposed layer surface 11.

[0449] In process 1100, a quantity of patterned material 1111 is heated under vacuum to evaporate and / or sublimate patterned material 1111. In some non-limiting examples, patterned material 1111 may comprise entirely and / or substantially the material used to form patterned coating 210. In some non-limiting examples, such material may comprise an organic material.

[0450] A vaporized flux 1112 of patterned material 1111 can flow through chamber 1110, including in the direction indicated by arrow 111, toward exposed layer surface 11. As vaporized flux 1112 impinges on exposed layer surface 11, a patterned coating 210 can be formed thereon.

[0451] In some non-limiting examples, as shown in the diagram of process 1100, patterned coating 210 may be selectively deposited only on a portion of exposed layer surface 11, in the illustrated example, first portion 401, by interposing a shadow mask 1115, which may be an FMM in some non-limiting examples, between vaporized flux 1112 and exposed layer surface 11. In some non-limiting examples, such a shadow mask 1115 may be used to form relatively small features, in some non-limiting examples, having feature sizes of tens of microns or less.

[0452] The shadow mask 1115 can have at least one opening 1116 extending therethrough such that a portion of the vaporized flux 1112 can pass through the opening 1116 and impinge on the exposed layer surface 11 to form the patterned coating 210. If the vaporized flux 1112 does not pass through the opening 1116 and impinges on the surface 1117 of the shadow mask 1115, it is prevented from being disposed on the exposed layer surface 11 to form the patterned coating 210. In some non-limiting examples, the shadow mask 1115 can be configured such that the vaporized flux 1112 passing through the opening 1116 can impinge on the first portion 401 but not on the second portion 402. Thus, the second portion 402 of the exposed layer surface 11 can be substantially devoid of the patterned coating 210. In some non-limiting examples (not shown), the patterned material 1111 incident on the shadow mask 1115 can be deposited on its surface 1117.

[0453] Thus, a patterned surface may be produced upon completion of deposition of patterned coating 210.

[0454] FIG. 12 illustrates a method generally at 1200 within a chamber 1110 for selectively depositing a closed coating 1040 of a deposition layer 1030 onto a second portion 402 of an underlying exposed layer surface 11 substantially devoid of the patterned coating 210 selectively deposited on the first portion 401, including but not limited to by the deposition process 1100 of FIG. 11 . a 1 is an illustrative schematic diagram showing a non-limiting example of the results of the deposition process shown in FIG.

[0455] In some non-limiting examples, the deposition layer 1030 may be composed of a deposition material 1231, which in some non-limiting examples includes at least one metal. Those skilled in the art will appreciate that organic materials typically have lower vaporization temperatures than metals, such as those that may be employed as the deposition material 1231.

[0456] Thus, in some non-limiting examples, using a shadow mask 1115 to selectively deposit a patterned coating 210 in a pattern may be less restrictive than employing such a shadow mask 1115 to directly pattern the deposition layer 1030.

[0457] Once the patterned coating 210 is deposited on a first portion 401 of the underlying exposed layer surface 11, a closed coating 1040 of deposition material 1231 may be deposited as a deposition layer 1030 on a second portion 402 of the exposed layer surface 11 that is substantially devoid of the patterned coating 210.

[0458] Process 1200 a In the deposition layer 1030, a quantity of the deposition material 1231 can be heated under vacuum to evaporate and / or sublimate the deposition material 1231. In some non-limiting examples, the deposition material 1231 can completely and / or substantially comprise the material used to form the deposition layer 1030.

[0459] A vaporization flux 1232 of the deposition material 1231 may be directed toward the exposed layer surface 11 of the first portion 401 and the second portion 402, toward the interior of the chamber 1110, including in the direction indicated by arrow 121. When the vaporization flux 1232 is incident on the second portion 402 of the exposed layer surface 11, a closed coating 1040 of the deposition material 1231 may be formed thereon as the deposition layer 1030.

[0460] In some non-limiting examples, deposition of deposition material 1231 may be performed using open mask and / or mask-free deposition processes.

[0461] Those skilled in the art will appreciate that the feature size of the open mask, in contrast to the feature size of the shadow mask 1115, may be approximately comparable to the size of the device 100 being fabricated.

[0462] It will be understood by those skilled in the art that in some non-limiting examples, the use of an open mask may be omitted. In some non-limiting examples, the open mask deposition processes described herein may alternatively be performed without the use of an open mask such that the entire target exposure layer surface 11 may be exposed.

[0463] In fact, as shown in FIG. 12, the vaporization flux 1232 can be incident on both the exposed layer surface 11 of the patterned coating 210 over the first portion 401 and the underlying exposed layer surface 11 over the second portion 402, which is substantially devoid of the patterned coating 210.

[0464] Because the exposed layer surface 11 of the patterned coating 210 in the first portion 401 may exhibit a relatively low initial sticking probability for deposition of the deposition material 1231 relative to the underlying exposed layer surface 11 in the second portion 402, the deposition layer 1030 may be deposited substantially selectively only on the underlying exposed layer surface 11 in the second portion 402 that is substantially devoid of the patterned coating 210. In contrast, the vaporization flux 1232 incident on the exposed layer surface 11 of the patterned coating 210 over the first portion 401 may tend not to be deposited (as shown at 1233), and the exposed layer surface 11 of the patterned coating 210 over the first portion 401 may be substantially devoid of the closed coating 1040 of the deposition layer 1030.

[0465] In some non-limiting examples, the initial deposition rate of the vaporized flux 1232 on the underlying exposed layer surface 11 in the second portion 402 may exceed at least one of approximately 200 times, 550 times, 900 times, 1,000 times, 1,500 times, 1,900 times, or approximately 2,000 times the initial deposition rate of the vaporized flux 1232 on the exposed layer surface 11 of the patterned coating 210 in the first portion 401.

[0466] Thus, the combination of selective deposition of patterned coating 210 in FIG. 11 using a shadow mask 1115 and an open mask and / or mask-free deposition of deposition material 1231 results in version 1200 of device 100 shown in FIG. a This can result in:

[0467] After selective deposition of the patterned coating 210 over the first portion 401, a closed coating 1040 of deposition material 1231 is deposited on the device 1200 as the deposition layer 1030 using, in some non-limiting examples, open mask and / or mask-free deposition processes. a , but may remain substantially only in second portion 402 that is substantially devoid of patterned coating 210.

[0468] The patterned coating 210 is located in the first portion 401 and in the second portion 402. a The exposed layer surface 11 may have a relatively low initial sticking probability to deposition of the deposition material 1231 that is substantially equal to or less than the initial sticking probability to deposition of the deposition material 1231 of the exposed layer surface 11 of the underlying material.

[0469] Thus, the first portion 401 may be substantially devoid of a closed coating 1040 of the deposition material 1231 .

[0470] Although the present disclosure contemplates patterned deposition of patterned coating 210 by an evaporation deposition process involving a shadow mask 1115, those skilled in the art will understand that in some non-limiting examples, this may be achieved by any suitable deposition process, including, but not limited to, a microcontact printing process.

[0471] While the present disclosure contemplates that the patterned coating 210 is a NIC, those skilled in the art will understand that in some non-limiting examples, the patterned coating 210 can be a NPC 1420. In such examples, the portion where the NPC 1420 is deposited (e.g., but not limited to, the first portion 401) may, in some non-limiting examples, have a closed coating 1040 of the deposited material 1231, while other portions (e.g., but not limited to, the second portion 402) may substantially lack the closed coating 1040 of the deposited material 1231.

[0472] In some non-limiting examples, the average layer thickness of the patterned coating 210 and the subsequently deposited deposition layer 1030 may vary according to various parameters, including, but not limited to, a given application and a given performance characteristic. In some non-limiting examples, the average layer thickness of the patterned coating 210 may be comparable to and / or substantially less than the average layer thickness of the subsequently deposited deposition layer 1030. The use of a relatively thin patterned coating 210 to achieve selective patterning of the deposition layer 1030 may be suitable for providing a flexible device 1000. In some non-limiting examples, the relatively thin patterned coating 210 may be a barrier coating or other thin film encapsulation (TFE) layer 2250. (Figure 22B) In some non-limiting examples, providing such a relatively flat surface for application of such a barrier coating 1950 may increase its adhesion to such a surface.

[0473] Edge Effect Patterned Coating Transition Region 13A, device 1300 of FIG. 10 may be seen, which may show in exaggerated form the interface between patterned coating 210 in first portion 401 and deposited layer 1030 in second portion 402. a A version 1000 of the device 1300 may be shown. a can be shown in plan view.

[0474] 13B , in some non-limiting examples, patterned coating 210 in first portion 401 may be surrounded on all sides by deposited layer 1030 in second portion 402, such that first portion 401 may have a boundary defined by a further extent or edge 1315 of patterned coating 210 on a side along each lateral axis. In some non-limiting examples, patterned coating edge 1315 on a side may be defined by the perimeter of first portion 401 in such an embodiment.

[0475] In some non-limiting examples, the first portion 401 may have at least one patterned coating transition region 401 on the side. t , where the thickness of the patterned coating 210 can transition from a maximum thickness to a reduced thickness. The area of ​​the first portion 401 that does not exhibit such a transition is the patterned coating non-transition portion 401 of the first portion 401. n In some non-limiting examples, the patterned coating 210 may be identified as a patterned coating non-transition portion 401 of the first portion 401. n A substantially closed coating 1040 can be formed in

[0476] In some non-limiting examples, the patterned coating transition region 401 t The patterned coating of the first portion 401 is a non-transition portion 401 on the side. n and the patterned coating edge 1315.

[0477] In some non-limiting examples, in plan view, patterned coating transition region 401 t The patterned coating of the first portion 401 is the non-transition portion 401 n may surround and / or extend along the periphery of

[0478] In some non-limiting examples, along at least one horizontal axis, the patterned coating non-transition portion 401 n may occupy the entire first portion 401, thereby forming the patterned coating transition region 401 t does not exist between it and the second part 402.

[0479] As shown in FIG. 13A, in some non-limiting examples, the patterned coating 210 may include a patterned coating non-transition portion 401 of the first portion 401. n In some non-limiting examples, the patterned coating non-transition portion 401 of the first portion 401 may have an average film thickness d2 that may be in at least one range of about 1 to 100 nm, about 2 to 50 nm, about 3 to 30 nm, about 4 to 20 nm, about 5 to 15 nm, about 5 to 10 nm, or about 1 to 10 nm. n The average layer thickness d2 of the patterned coating 210 in the non-transition portion 401 may be substantially the same or constant throughout. n The thickness may remain within at least one of about 95% or 90% of the average thickness d2 of patterned coating 210.

[0480] In some non-limiting examples, the average film thickness d2 may be about 1 to 100 nm. In some non-limiting examples, the average film thickness d2 may be less than or equal to at least one of about 80 nm, about 60 nm, about 50 nm, about 40 nm, about 30 nm, about 20 nm, about 15 nm, or about 10 nm. In some non-limiting examples, the average film thickness d2 of patterned coating 210 may be greater than at least one of about 3 nm, about 5 nm, or about 8 nm.

[0481] In some non-limiting examples, the patterned coating of the first portion 401 may be applied to the non-transition portion 401 nThe average thickness d2 of patterned coating 210 in first portion 401 may be about 10 nm or less. Without being bound by any particular theory, it is somewhat surprising that the average thickness d2 of patterned coating 210 of greater than 0 and about 10 nm or less is, in at least some non-limiting examples, the average thickness d2 of patterned coating 210 in first portion 401, for example, the average thickness d2 of patterned coating 210 in non-transition portion 401 of first portion 401. n It has been found that this can provide certain advantages for achieving improved pattern contrast of the deposited layer 1030 compared to a patterned coating 210 having an average film thickness d2 of more than 10 nm.

[0482] In some non-limiting examples, the patterned coating 210 may include a patterned coating transition region 401 t The patterned coating thickness may decrease from a maximum to a minimum within the patterned coating transition region 401 of the first portion 401. In some non-limiting examples, the maximum value may be within the patterned coating transition region 401 of the first portion 401. t and patterned coating non-transition portion 401 n In some non-limiting examples, the minimum value may be at and / or near the boundary between the patterned coating edge 1315 of the first portion 401 and the patterned coating non-transition portion 401 of the second portion 401. In some non-limiting examples, the maximum value may be at and / or near the boundary between the patterned coating edge 1315 of the first portion 401 and the patterned coating non-transition portion 401 of the first portion 401. n In some non-limiting examples, the maximum value may be the average thickness d2 of the patterned coating non-transition portion 401 of the first portion 401. n In some non-limiting examples, the minimum value may be within a range of about 0 to 0.1 nm.

[0483] In some non-limiting examples, the patterned coating transition region 401 tThe patterned coating thickness profile at may be sloped and / or follow a gradient. In some non-limiting examples, such a profile may be tapered. In some non-limiting examples, the taper may follow a linear, non-linear, parabolic, and / or exponential decay profile.

[0484] In some non-limiting examples, the patterned coating 210 may include a patterned coating transition region 401 t In some non-limiting examples, at least a portion of the underlayer may completely cover the surface of the underlayer in the patterned coating transition region 401. t In some non-limiting examples, the patterned coating 210 may remain uncovered by the patterned coating 210 in the patterned coating transition region 401. t and / or at least a portion of the patterned coating non-transition portion 401 n At least a portion of the coating 1040 may include a substantially closed coating 1040.

[0485] In some non-limiting examples, the patterned coating 210 may include a patterned coating transition region 401 t and / or at least a portion of the patterned coating non-transition portion 401 n At least a portion of the discontinuous layer 130 may be included.

[0486] In some non-limiting examples, at least a portion of the patterned coating 210 in the first portion 401 can be substantially devoid of a closed coating 1040 of the deposited layer 1030. In some non-limiting examples, at least a portion of the exposed layer surface 11 of the first portion 401 can be substantially devoid of a closed coating 1040 of the deposited layer 1030 or deposited material 1231.

[0487] In some non-limiting examples, the patterned coating non-transition portion 401 along at least one horizontal axis, including but not limited to the X axis. nmay have a width of w1, and the patterned coating transition region 401 t may have a width of w2. In some non-limiting examples, the patterned coating non-transition portion 401 n In some non-limiting examples, the patterned coating transition region 401 may have a cross-sectional area that may be approximated by multiplying the average film thickness d2 by the width w1. In some non-limiting examples, the patterned coating transition region 401 t In some non-limiting examples, the patterned coating transition region 401 t The cross-sectional area may be approximated by multiplying the average film thickness over the area by the width w1.

[0488] In some non-limiting examples, w1 can be greater than w2. In some non-limiting examples, the quotient of w1 / w2 can be at least one of about 5, about 10, about 20, about 50, about 100, about 500, about 1,000, about 1,500, about 5,000, about 10,000, about 50,000, or about 100,000.

[0489] In some non-limiting examples, at least one of w1 and w2 may exceed the average thickness d1 of the underlying layer.

[0490] In some non-limiting examples, at least one of w1 and w2 may exceed d2. In some non-limiting examples, both w1 and w2 may exceed d2. In some non-limiting examples, both w1 and w2 may exceed d1, and d1 may exceed d2.

[0491] Sedimentary layer transition region 13B , in some non-limiting examples, the patterned coating 210 in the first portion 401 may be surrounded by the deposited layer 1030 in the second portion 402, such that the second portion 402 has a boundary defined laterally along each lateral axis by a further extent or edge 1335 of the deposited layer 1030. In some non-limiting examples, the deposited layer edge 1335 at a side may be defined by the perimeter of the second portion 402 at such side.

[0492] In some non-limiting examples, the second portion 402 may have at least one deposition layer transition region 402 on the side. t The thickness of the deposition layer 1030 may include a transition from a maximum thickness to a reduced thickness. The area of ​​the second portion 402 that does not exhibit such a transition is the deposition layer non-transition portion 402 of the second portion 402. n In some non-limiting examples, the deposition layer 1030 can be identified as the deposition layer non-transition portion 402 of the second portion 402. n A substantially closed coating 1040 may be formed in the

[0493] In some non-limiting examples, in a plane, the deposition layer transition region 402 t The second portion 402 has a non-transition portion 402 of the deposition layer on the side. n and the stack edge 1335.

[0494] In some non-limiting examples, in plan view, the deposition layer transition region 402 t The deposition layer non-transition portion 402 of the second portion 402 n may surround and / or extend along the periphery of

[0495] In some non-limiting examples, along at least one transverse axis, the deposition layer non-transition portion 402 of the second portion 402 n 402 between it and the first portion 401. t may occupy the entire second portion 402 such that there is no

[0496] As shown in FIG. 13A, in some non-limiting examples, the deposition layer 1030 may be formed in the deposition layer non-transition portion 402 of the second portion 402. nIn some non-limiting examples, the deposition layer non-transition portion 402 of the second portion 402 may have an average film thickness d3 that may be within at least one of the following ranges: about 1 to 500 nm, about 5 to 200 nm, about 5 to 40 nm, about 10 to 30 nm, or about 10 to 100 nm. In some non-limiting examples, d3 may be greater than at least one of about 10 nm, about 50 nm, or about 100 nm. In some non-limiting examples, the deposition layer non-transition portion 402 of the second portion 402 may have an average film thickness d3 that may be within at least one of the following ranges: about 1 to 500 nm, about 5 to 200 nm, about 5 to 40 nm, about 10 to 30 nm, or about 10 to 100 nm. t The average thickness d3 of the deposited layer 1030 at may be substantially the same or constant throughout.

[0497] In some non-limiting examples, d3 may be greater than the average thickness d1 of the underlying layer.

[0498] In some non-limiting examples, the quotient d3 / d1 can be at least one of about 1.5, about 2, about 5, about 10, about 20, about 50, or about 100. In some non-limiting examples, the quotient d3 / d1 can be within at least one of the ranges of about 0.1 to 10 or about 0.2 to 40.

[0499] In some non-limiting examples, d3 may be greater than the average film thickness d2 of patterned coating 210.

[0500] In some non-limiting examples, the quotient d3 / d2 can be at least one of about 1.5, about 2, about 5, about 10, about 20, about 50, or about 100. In some non-limiting examples, the quotient d3 / d2 can be within at least one of the ranges of about 0.2-10 or about 0.5-40.

[0501] In some non-limiting examples, d3 may be greater than d2, and d2 may be greater than d1. In some other non-limiting examples, d3 may be greater than d1, and d1 may be greater than d2.

[0502] In some non-limiting examples, the quotient d2 / d1 can be between at least one of about 0.2 and 3, or about 0.1 and 5.

[0503] In some non-limiting examples, the deposition layer non-transition portion 402 of the second portion 402 along at least one horizontal axis, including but not limited to the X-axis. n In some non-limiting examples, the deposition layer non-transition portion 402 of the second portion 402 may have a width of w3. n may have a cross-sectional area a3, which may, in some non-limiting examples, be approximated by multiplying the average membrane thickness d3 by the width w3.

[0504] In some non-limiting examples, w3 is the patterned coating non-transition portion 401 n In some non-limiting examples, w1 may be greater than w3.

[0505] In some non-limiting examples, the quotient w1 / w3 can be in the range of at least one of about 0.1 to 10, about 0.2 to 5, about 0.3 to 3, or about 0.4 to 2. In some non-limiting examples, the quotient w3 / w1 can be at least one of about 1, about 2, about 3, or about 4.

[0506] In some non-limiting examples, w3 may be greater than the average thickness d3 of the deposited layer 1030.

[0507] In some non-limiting examples, the quotient w3 / d3 can be at least one of about 10, about 50, about 100, or about 500. In some non-limiting examples, the quotient w3 / d3 can be less than or equal to about 100,000.

[0508] In some non-limiting examples, the deposition layer 1030 may be formed in the deposition layer transition region 402 t The thickness of the second portion 402 can be increased from a maximum to a minimum within the deposition layer transition region 402. In some non-limiting examples, the maximum thickness can be increased within the deposition layer transition region 402 of the second portion 402. t and the non-transitional portion of the sedimentary layer 402 nIn some non-limiting examples, the minimum value may be at and / or near the boundary between the deposition layer edge 1335 of the second portion 402 and the deposition layer non-transition portion 402 of the second portion 402. n In some non-limiting examples, the minimum value may be in the range of about 0 to 0.1 nm. In some non-limiting examples, the minimum value may be the average thickness d3 of the deposition layer non-transition portion 402 of the second portion 402. n The average thickness d3 in the

[0509] In some non-limiting examples, the deposition layer transition region 402 t The thickness profile at may be sloped and / or follow a gradient. In some non-limiting examples, such a profile may be tapered. In some non-limiting examples, the taper may follow a linear, non-linear, parabolic, and / or exponential decay profile.

[0510] In some non-limiting examples, the exemplary version 1300 of FIG. 13E of the device 1000 e As shown as a non-limiting example in FIG. 1, the deposition layer 1030 is formed in the deposition layer transition region 402. t In some non-limiting examples, the deposition layer 1030 may completely cover the underlying surface in the deposition layer transition region 402. t In some non-limiting examples, at least a portion of the underlying surface may include a substantially closed coating 1040. t 1030. In this case, the surface of the substrate 100 may not be covered by the deposition layer 1030.

[0511] In some non-limiting examples, the deposition layer 1030 may be formed in the deposition layer transition region 402 t At least a portion of the discontinuous layer 130 may be included.

[0512] Although not explicitly shown, one skilled in the art will understand that patterned material 1111 may also be present to some extent at the interface between deposited layer 1030 and the underlying layer. Such material may be deposited as a result of shadowing effects where the deposited pattern is not identical to the pattern of the mask, which may, in some non-limiting examples, result in some evaporated patterned material 1111 being deposited on the masked portions of target exposure layer surface 11. As a non-limiting example, such material may be present in the grain structure 121. and and / or may be formed as a thin film having a thickness that may be substantially equal to or less than the average thickness of patterned coating 210.

[0513] overlap In some non-limiting examples, the deposition layer edge 1335 may be formed in the patterned coating transition region 401 of the first portion 401. t The first and second portions 401, 402 may be laterally spaced apart from each other so that there is no overlap between the first and second portions 401, 402 at the sides.

[0514] In some non-limiting examples, at least a portion of first portion 401 and at least a portion of second portion 402 may overlap laterally. Such overlap may be identified by overlapping portion 1303, as may be shown as a non-limiting example in FIG. 13A , where at least a portion of second portion 402 overlaps at least a portion of first portion 401.

[0515] In some non-limiting examples, as shown by way of non-limiting example in FIG. 13F, deposition layer transition region 402 t At least a portion of the patterned coating transition region 401 t In some non-limiting examples, the patterned coating transition region 401 t At least a portion of the patterned coating transition region 401 may be substantially devoid of the deposition layer 1030 and / or deposition material 1231. In some non-limiting examples, the deposition material 1231 may be present in the patterned coating transition region 401. tA discontinuous layer 130 may be formed on at least a portion of the exposed layer surface 11 .

[0516] In some non-limiting examples, as shown by way of non-limiting example in FIG. 13G, the deposition layer transition region 402 t At least a portion of the patterned coating of the first portion 401 is non-transition portion 401 n may be disposed on at least a portion of the

[0517] Although not shown, one skilled in the art will understand that in some non-limiting examples, overlapping portion 1303 may reflect a scenario in which at least a portion of first portion 401 overlaps with at least a portion of second portion 402.

[0518] Thus, in some non-limiting examples, the patterned coating transition region 401 t At least a portion of the deposition layer transition region 402 t In some non-limiting examples, the deposition layer transition region 402 t At least a portion of the deposited layer transition region 402 may be substantially devoid of patterned coating 210 and / or patterned material 1111. In some non-limiting examples, the patterned material 1111 may be present in the deposited layer transition region 402. t A discontinuous layer 130 may be formed on at least a portion of the exposed layer surface.

[0519] In some non-limiting examples, the patterned coating transition region 401 t At least a portion of the deposition layer non-transition portion 402 of the second portion 402 n may be disposed on at least a portion of the

[0520] In some non-limiting examples, the patterned coating edge 1315 may be formed on the side of the deposition layer non-transition portion 402 of the second portion 402. n It may be separated from

[0521] In some non-limiting examples, the deposition layer 1030 may be formed on the deposition layer non-transition portion 402 of the second portion 402. n and the deposition layer transition region 402 t Alternatively, the coating may be formed as a single monolithic coating over both the surface and the substrate.

[0522] Edge effects in patterned coatings and deposited layers. 14A-14I illustrate various potential behaviors of patterned coating 210 at the deposition interface with deposited layer 1030. FIG.

[0523] 14A , a first example of a portion of an illustrative version 1400 of device 1000 at a patterned coating deposition interface can be shown. Device 1400 can include a substrate 10 having an exposed layer surface 11. Patterned coating 210 can be deposited on a first portion 401 of exposed layer surface 11. Deposition layer 1030 can be deposited on a second portion 402 of exposed layer surface 11. As shown, by way of non-limiting example, first portion 401 and second portion 402 can be separate, non-overlapping portions of exposed layer surface 11.

[0524] Deposition layer 1030 can include a first portion 1301 and a second portion 10302. As shown, by way of non-limiting example, first portion 10301 of deposition layer 1030 can substantially cover second portion 402, and second portion 10302 of deposition layer 1030 can partially protrude and / or overlap the first portion of patterned coating 210.

[0525] In some non-limiting examples, the patterned coating 210 can be formed such that its exposed layer surface 11 exhibits a relatively low initial sticking probability for the deposition of the deposition material 1231, such that there can be a gap 1429 formed between the protruding and / or overlapping second portion 10302 of the deposition layer 1030 and the exposed layer surface 11 of the patterned coating 210. As a result, the second portion 10302 may not be in physical contact with the patterned coating 210, but may be separated therefrom in cross section by the gap 1429. In some non-limiting examples, the first portion 10301 of the deposition layer 1030 can be in physical contact with the patterned coating 210 at the interface and / or boundary between the first portion 401 and the second portion 402.

[0526] In some non-limiting examples, the protruding and / or overlapping second portion 10302 of the deposited layer 1030 has an average layer thickness d a As a non-limiting example, as shown, second portion 10302 may extend laterally over patterned coating 210 by an amount equal to b is the average layer thickness d of the first portion 10301 a In some non-limiting examples, the width w of the second portion 10302 may be equal to b and the average layer thickness d of the first portion 10301 a The ratio of the average layer thickness d to the average layer thickness d may be within at least one of the ranges of about 1:1 to 1:3, about 1:1 to 1:1.5, or about 1:1 to 1:2. a In some non-limiting examples, the thickness may be relatively uniform across the first portion 10301, while in some non-limiting examples, the thickness may vary over an area where the second portion 10302 may protrude into and / or overlap the patterned coating 210 (i.e., w b ) may vary to some extent over different portions of exposed layer surface 11.

[0527] 14B, the deposition layer 1030 may be shown to include a third portion 10303 disposed between the second portion 10302 and the patterned coating 210. As shown, the second portion 10302 of the deposition layer 1030 may extend laterally above and be longitudinally spaced apart from the third portion 10303 of the deposition layer 1030, and the third portion may be in physical contact with the exposed layer surface 11 of the patterned coating 210. The average layer thickness d of the third portion 10303 of the deposition layer 1030 may be c is the average layer thickness d of the first portion 10301 a In some non-limiting examples, the width w of the third portion 10303 may be less than 10303 mm, and in some non-limiting examples, may be substantially less than 10303 mm. c is the width w of the second portion 10302 b In some non-limiting examples, third portion 10303 may extend laterally to overlap patterned coating 210 more than second portion 10302. In some non-limiting examples, width w of third portion 10303 c and the average layer thickness d of the first portion 10301 a The ratio of the average layer thickness d to the average layer thickness d may be within at least one of the ranges of about 1:2 to 3:1, or about 1:1.2 to 2.5:1. a In some non-limiting examples, the thickness may be relatively uniform across the first portion 10301, but in some non-limiting examples, the thickness may vary over an area where the third portion 10303 may protrude into and / or overlap the patterned coating 210 (i.e., w c ) may vary to some extent over different portions of exposed layer surface 11.

[0528] In some non-limiting examples, the average layer thickness d of the third portion 10303 c is the average layer thickness d of the first portion 10301 a As a non-limiting example, d c is d aAlternatively, and / or in addition to, the third portion 10303 being formed as a thin film, the deposition material 1231 of the deposition layer 1030 may be formed as a grain structure 121 on a portion of the patterned coating 210, as shown. By way of non-limiting example, such grain structures 121 may include features that are physically separated from one another such that they do not form a continuous layer.

[0529] 14C , the NPC 1420 may be disposed between the substrate 10 and the deposition layer 1030. The NPC 1420 may be disposed between a first portion 10301 of the deposition layer 1030 and a second portion 402 of the substrate 10. The NPC 1420 is shown as being disposed on the second portion 402, rather than on the first portion 401 on which the patterned coating 210 was deposited. The NPC 1420 may be formed at the interface and / or boundary between the NPC 1420 and the deposition layer 1030 such that the surface of the NPC 1420 may exhibit a relatively high initial sticking probability for the deposition of the deposition material 1231. Thus, the presence of the NPC 1420 may facilitate the formation and / or growth of the deposition layer 1030 during deposition.

[0530] 14D , NPC 1420 may be disposed on both first portion 401 and second portion 402 of substrate 10, and patterned coating 210 may cover a portion of NPC 1420 disposed on first portion 401. Another portion of NPC 1420 may be substantially devoid of patterned coating 210, and deposited layer 1030 may cover such portion of NPC 1420.

[0531] 14E , the deposition layer 1030 may be shown overlapping a portion of the patterned coating 210 in a third portion 1403 of the substrate 10. In some non-limiting examples, in addition to the first portion 10301 and the second portion 10302, the deposition layer 1030 can further include a fourth portion 10304. As shown, the fourth portion 10304 of the deposition layer 1030 may be disposed between the first portion 10301 and the second portion 10302 of the deposition layer 1030, and the fourth portion 10304 may be in physical contact with the exposed layer surface 11 of the patterned coating 210. In some non-limiting examples, the overlap in the third portion 1403 may be formed as a result of lateral growth of the deposition layer 1030 during an open-mask and / or mask-free deposition process. In some non-limiting examples, the exposed layer surface 11 of the patterned coating 210 may exhibit a relatively low initial adhesion probability for the deposition of the deposition material 1231, and therefore the probability of material nucleating on the exposed layer surface 11 may be low, but as the thickness of the deposition layer 1030 grows, the deposition layer 1030 may also grow laterally and cover a subset of the patterned coating 210 as shown.

[0532] 14F, a first portion 401 of the substrate 10 may be coated with the patterned coating 210, and an adjacent second portion 402 may be coated with the deposition layer 1030. In some non-limiting examples, it has been observed that by performing open-mask and / or mask-free deposition of the deposition layer 1030, the deposition layer 1030 may exhibit a tapered cross-sectional profile at and / or near the interface between the deposition layer 1030 and the patterned coating 210.

[0533] In some non-limiting examples, the average layer thickness of the deposited layer 1030 at and / or near the interface may be less than the average layer thickness d3 of the deposited layer 1030. Such a tapered profile may be depicted as curved and / or arcuate, although in some non-limiting examples, the profile may be substantially linear and / or non-linear in some non-limiting examples. By way of non-limiting example, the average layer thickness d3 of the deposited layer 1030 may decrease substantially linearly, exponentially, and / or quadratically in the region proximate the interface.

[0534] The contact angle θ of the deposited layer 1030 at and / or near the interface between the deposited layer 1030 and the patterned coating 210 c It has been observed that the contact angle θ of the nuclei can vary depending on the properties of the patterned coating 210, such as the relative initial adhesion probability. c It may further be assumed that, in some non-limiting examples, the contact angle θ may determine the thin film contact angle of the deposition layer 1030 formed by deposition. Referring to FIG. 14F as a non-limiting example, the contact angle θ c can be determined by measuring the slope of a tangent to the deposited layer 1030 at and / or near the interface between the deposited layer 1030 and the patterned coating 210. In some non-limiting examples, when the cross-sectional tapered profile of the deposited layer 1030 can be substantially linear, the contact angle θ c can be determined by measuring the slope of the deposited layer 1030 at and / or near the interface. As will be appreciated by those skilled in the art, the contact angle θ c can generally be measured relative to the angle of the underlying layer. In this disclosure, for ease of explanation, the patterned coating 210 and the deposition layer 1030 may be shown deposited on a planar surface. However, one skilled in the art will understand that the patterned coating 210 and the deposition layer 1030 may also be deposited on a non-planar surface.

[0535] In some non-limiting examples, the contact angle θ of the deposited layer 1030 cmay be greater than about 90°. Referring now to Figure 14G, by way of non-limiting example, deposited layer 1030 may be shown as including a portion that extends beyond the interface between patterned coating 210 and deposited layer 1030, and may be separated from patterned coating 210 by gap 1429. In such a non-limiting scenario, contact angle θ c may be greater than 90° in some non-limiting examples.

[0536] In some non-limiting examples, a relatively high contact angle θ c It may be advantageous to form a deposited layer 1030 that exhibits a contact angle θ c may be greater than at least one of about 10°, about 15°, about 20°, about 25°, about 30°, about 35°, about 40°, about 50°, about 70°, about 75°, or about 80°. c A deposited layer 1030 having a contact angle θ greater than about 90° can enable the creation of finely patterned features while maintaining a relatively high aspect ratio. c As a non-limiting example, the objective may be to form a deposited layer 1030 that exhibits a contact angle θ c may be greater than at least one of about 90°, about 95°, about 100°, about 105°, about 110°, about 120°, about 130°, about 135°, about 140°, about 145°, about 150°, or about 170°.

[0537] 14H and 14I, the deposition layer 1030 may overlap a portion of the patterned coating 210 in a third portion 1403 of the substrate 10, which may be disposed between the first and second portions 401 and 402 thereof. As shown, the subset of the deposition layer 1030 that overlaps the subset of the patterned coating 210 may be in physical contact with the exposed layer surface 11 thereof. In some non-limiting examples, the overlap in the third portion 1403 may be formed due to lateral growth of the deposition layer 1030 during an open-mask and / or mask-free deposition process. In some non-limiting examples, the exposed layer surface 11 of the patterned coating 210 may exhibit a relatively low initial sticking probability for the deposition of the deposition material 1231, and therefore, the probability of material nucleating on the exposed layer surface 11 may be low; however, as the thickness of the deposition layer 1030 grows, the deposition layer 1030 may also grow laterally and cover the subset of the patterned coating 210.

[0538] In the case of FIGS. 14H and 14I, the contact angle θ of the deposited layer 1030 c can be measured at its edge near the interface between it and patterned coating 210, as shown. In FIG. 14I, the contact angle θ c may exceed about 90°, which, in some non-limiting examples, may result in a subset of the deposited layer 1030 being separated from the patterned coating 210 by a gap 1429.

[0539] particle 13C, there may be at least one particle including, but not limited to, nanoparticles (NPs), islands, plates, isolated clusters, and / or networks (collectively, particle structures 121) disposed on the exposed layer surface 11 of the underlying layer. In some non-limiting examples, the underlying layer may be patterned coating 210 in first portion 401. In some non-limiting examples, at least one particle structure 121 may be disposed on the exposed layer surface 11 of patterned coating 210. In some non-limiting examples, there may be multiple such particle structures 121.

[0540] In some non-limiting examples, the at least one grain structure 121 can include a grain material, which can be the same as the deposition material 1231 in the deposition layer 1030.

[0541] In some non-limiting examples, the particulate material in the discontinuous layer 130 in the first portion 401, the deposited material 1231 in the deposited layer 1030, and / or the material that the underlying layer may comprise may comprise a common metal.

[0542] In some non-limiting examples, the particulate material may include an element selected from at least one of K, Na, Li, Ba, Cs, Yb, Ag, Au, Cu, Al, Mg, Zn, Cd, Sn, or Y. In some non-limiting examples, the element may include at least one of K, Na, Li, Ba, Cs, Yb, Ag, Au, Cu, Al, or Mg. In some non-limiting examples, the element may include at least one of Cu, Ag, or Au. In some non-limiting examples, the element may be Cu. In some non-limiting examples, the element may be Al. In some non-limiting examples, the element may include at least one of Mg, Zn, Cd, or Yb. In some non-limiting examples, the element may include at least one of Mg, Ag, Al, Yb, or Li. In some non-limiting examples, the element may include at least one of Mg, Ag, or Yb. In some non-limiting examples, the element can include at least one of Mg or Ag. In some non-limiting examples, the element can be Ag.

[0543] In some non-limiting examples, the particle material may include a pure metal. In some non-limiting examples, at least one particle structure 121 may be a pure metal. In some non-limiting examples, at least one particle structure 121 may be at least one of pure Ag or substantially pure Ag. In some non-limiting examples, the substantially pure Ag may have a purity of at least one of about 95%, 99%, 99.9%, 99.99%, 99.999%, or 99.9995%. In some non-limiting examples, at least one particle structure 121 may be at least one of pure Mg or substantially pure Mg. In some non-limiting examples, the substantially pure Mg may have a purity of at least one of about 95%, 99%, 99.9%, 99.99%, 99.999%, or 99.9995%.

[0544] In some non-limiting examples, at least one grain structure 121 can include an alloy. In some non-limiting examples, the alloy can be at least one of an Ag-containing alloy, an Mg-containing alloy, or an AgMg-containing alloy. In some non-limiting examples, the AgMg-containing alloy can have an alloy composition that can range from about 1:10 (Ag:Mg) to about 10:1 by volume.

[0545] In some non-limiting examples, the particle material may include other metals in place of or in combination with Ag. In some non-limiting examples, the particle material may include an alloy of Ag and at least one other metal. In some non-limiting examples, the particle material may include an alloy of Ag and at least one of Mg or Yb. In some non-limiting examples, such an alloy may be a bina...

Claims

1. A semiconductor device having a plurality of layers deposited on a substrate, the plurality of layers extending on first and second portions of at least one side defined by a lateral axis of the semiconductor device; the semiconductor device comprises at least one electromagnetic (EM) radiation absorbing layer deposited on a first layer surface; the at least one EM radiation absorbing layer comprises at least one grain-structured discontinuous layer comprising a deposition material; the at least one grain structure of the at least one EM radiation absorbing layer facilitates absorption of EM radiation in the semiconductor device in at least a portion of at least one of the visible spectrum and the ultraviolet (UV) spectrum, while substantially allowing transmission of EM radiation in the semiconductor device in at least a portion of at least one of the infrared (IR) spectrum and the near-infrared (NIR) spectrum; the first portion corresponds to at least a part of a signal transmission area; the second portion comprises at least one emissive region for emitting light in a wavelength range of the visible spectrum at an angle relative to the plurality of layers; The device is adapted to pass at least one EM signal through the first portion at an angle relative to the plurality of layers.

2. The device of claim 1 , wherein the deposited material is a metal.

3. The device of claim 2 , wherein the deposited material comprises at least one of magnesium, silver, and ytterbium.

4. The device of any one of claims 1 to 3, wherein the deposition material is co-deposited with a co-deposited dielectric material.

5. The device of any one of claims 1 to 4, wherein the at least one particle structure has a characteristic selected from at least one of the following: size, size distribution, shape, surface coverage, configuration, deposition density, composition.

6. 6. The device of claim 5, wherein the at least one particle structure has a coverage of one of about 10% to about 50%, about 10% to about 45%, about 12% to about 40%, about 15% to about 40%, about 15% to about 35%, about 18% to about 35%, about 20% to about 35%, or about 20% to about 30%.

7. 7. The device of claim 5 or claim 6, wherein the at least one grain structure has a maximum size of less than or equal to one of about 40 nm, about 35 nm, about 30 nm, about 25 nm, or about 20 nm.

8. 8. The device of any one of claims 5 to 7, wherein the at least one particle structure has a size that is one of a mean and median of one of about 5 nm to about 40 nm, about 5 nm to about 30 nm, about 8 nm to about 30 nm, about 10 nm to about 30 nm, about 8 nm to about 25 nm, about 10 nm to about 25 nm, about 8 nm to about 20 nm, about 10 nm to about 20 nm, about 10 nm to about 15 nm, about 8 nm to about 15 nm.

9. The device of any one of claims 1 to 8, wherein the at least one grain structure comprises a seed around which the deposited material coalesces.

10. the device further comprises a patterned coating disposed on the second layer surface; the first layer surface is an exposed layer surface of the patterned coating; 10. The device of claim 1, wherein an initial sticking probability for deposition of the deposition material on a surface of the patterned coating is substantially less than at least one of 0.3 and the initial sticking probability for deposition of the deposition material on a surface of the second layer, and the patterned coating is substantially devoid of a closed coating of the deposition material.

11. The device of claim 10 , wherein the patterned coating comprises at least one patterned material.

12. 12. The device of claim 10 or claim 11, wherein the patterned coating comprises a first patterned material having a first initial sticking probability for deposition of the deposition material and a second patterned material having a second initial sticking probability for deposition of the deposition material, the first initial sticking probability being substantially less than the second initial sticking probability.

13. 13. The device of claim 12, wherein the first patterning material is a nucleation inhibitor coating (NIC) material and the second patterning material is selected from at least one of an electron transport layer (ETL) material, Liq, and lithium fluoride (LiF).

14. 10. The device of claim 1, wherein the at least one EM signal has a wavelength range in at least a portion of at least one of the IR spectrum and the NIR spectrum.

15. 15. The device of claim 1 or claim 14, wherein the first portion is substantially devoid of a closed coating of the deposition material.

16. 16. The device of any one of claims 1, 14-15, wherein the device is adapted to allow the at least one EM signal to pass therethrough for at least one of emission and reception of the at least one EM signal by at least one under-display component.

17. The at least one under-display component comprises: a receiver adapted to receive the at least one EM signal passing through the device; and a transmitter adapted to emit the at least one EM signal that passes through the device; 17. The device of claim 16, comprising at least one of:

18. 20. The device of claim 17, wherein the receiver is an IR detector and the transmitter is an IR emitter.

19. 19. The device of claim 17 or claim 18, wherein the transmitter emits a first EM signal and the receiver detects a second EM signal that is a reflection of the first EM signal.

20. 20. The device of claim 19, wherein the emission of the first EM signal and the reception of the second EM signal provides biometric authentication of a user.

21. The device of any one of claims 16 to 20, wherein the device together with the device forms a display panel of a user device surrounding the under-display component.

22. the device further comprising at least one semiconductor layer disposed on a layer of the device; Each emission region comprises a first electrode and a second electrode; the first electrode is disposed between the substrate and the at least one semiconductor layer; The device of claim 1 , wherein the at least one semiconductor layer is disposed between the first electrode and the second electrode.

23. 23. The device of claim 22, wherein the device further comprises at least one closed coating of a deposition material disposed on an exposed layer surface of the device in the second portion.

24. 24. The device of claim 23, wherein the second electrode comprises the at least one closed coating of the deposition material.

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