Positive resist material and pattern forming method

Abstract

To provide a positive resist material that has better resolution than those of the conventional positive resist materials, and has reduced LWR, improved CDU, and a good pattern profile after exposure, and a pattern forming process.SOLUTION: A positive resist material comprises a base polymer comprising repeat units (a) having two triple bonds and repeat units (b) adapted to increase solubility in an alkaline developer under the action of acid.SELECTED DRAWING: None

Description

[Technical Field]

[0001] The present invention relates to a positive resist material and a pattern forming method. [Background technology]

[0002] As LSIs become more highly integrated and faster, pattern rules are becoming increasingly miniaturized. This is because the widespread adoption of 5G high-speed communications and artificial intelligence (AI) requires high-performance devices to process these technologies. The most advanced miniaturization technology is extreme ultraviolet (EUV) lithography with a wavelength of 13.5 nm, which is currently used to mass-produce 5 nm node devices. Furthermore, the use of EUV lithography is being considered for next-generation 3 nm node devices and the next-generation 2 nm node devices.

[0003] As miniaturization progresses, image blurring due to acid diffusion has become a problem. To ensure resolution in fine patterns with dimensions of 45 nm and smaller, it has been suggested that controlling acid diffusion is important, in addition to improving dissolution contrast, as has been proposed previously (Non-Patent Document 1). However, because chemically amplified resist materials increase sensitivity and contrast through acid diffusion, attempts to minimize acid diffusion by lowering the post-exposure bake (PEB) temperature or shortening the time result in significant decreases in sensitivity and contrast.

[0004] The triangle trade-off relationship between sensitivity, resolution, and edge roughness (LWR) is shown. To improve resolution, it is necessary to suppress acid diffusion, but as the acid diffusion distance becomes shorter, sensitivity decreases.

[0005] It is effective to suppress acid diffusion by adding an acid generator that generates bulky acid. Therefore, it has been proposed to incorporate repeating units derived from onium salts having polymerizable unsaturated bonds into a polymer. In this case, the polymer also functions as an acid generator (polymer-bound acid generator). Patent Document 1 proposes sulfonium salts and iodonium salts having polymerizable unsaturated bonds that generate specific sulfonic acids. Patent Document 2 proposes sulfonium salts in which sulfonic acids are directly linked to the main chain.

[0006] A resist material using a polymer containing a repeating unit derived from a methacrylate ester having a primary or secondary triple bond that does not have acid elimination properties has been proposed (Patent Document 3). This document describes a positive resist material in which a lactone ring-containing adhesive group is combined with the polymer. The triple bond is acidic, improving alkali affinity, but a resist with only one triple bond does not have the same alkali affinity or solubility in alkaline developers as phenol. [Prior art documents] [Patent documents]

[0007] [Patent Document 1] Japanese Patent Application Laid-Open No. 2006-045311 [Patent Document 2] Japanese Patent Application Laid-Open No. 2006-178317 [Patent Document 3] Japanese Patent Application Laid-Open No. 2009-86445 [Non-patent literature]

[0008] [Non-Patent Document 1] SPIE Vol. 3331 p531 (1998) Summary of the Invention [Problem to be solved by the invention]

[0009] The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a positive resist material and a pattern formation method that have a resolution superior to that of conventional positive resist materials, a small LWR, good dimensional uniformity (CDU), and a good pattern shape after exposure. [Means for solving the problem]

[0010] The present inventors have conducted extensive research to obtain a positive resist material that meets the recent demand for high resolution and has minimal edge roughness and dimensional variation. As a result, they have discovered that to achieve this, it is necessary to minimize the acid diffusion distance and to suppress swelling in an alkaline developer. They have also discovered that introducing a repeating unit containing two triple bonds into a base polymer improves alkaline solubility, thereby reducing swelling, and that this is particularly effective when used as a base polymer for a chemically amplified positive resist material.

[0011] Furthermore, the present inventors have found that by introducing into the base polymer a repeating unit in which the hydrogen atom of a carboxyl group or a phenolic hydroxyl group is substituted with an acid labile group in order to improve the dissolution contrast, it is possible to obtain a positive resist material which significantly increases the alkaline dissolution rate contrast before and after exposure, is highly effective in suppressing acid diffusion, has high resolution, and exhibits good pattern shape, LWR, and CDU after exposure, and is particularly suitable as a material for forming fine patterns in VLSI manufacturing or photomasks, and have completed the present invention.

[0012] That is, the present invention provides the following positive resist material and pattern forming method. 1. A positive resist material comprising a base polymer containing a repeating unit a having two triple bonds and a repeating unit b whose solubility in an alkaline developer is improved by the action of an acid. 2. A positive resist material according to 1, wherein the repeating unit a is represented by the following formula (a): [ka] (In the formula, R Ais a hydrogen atom or a methyl group. X 1 is an ester bond or a phenylene group. X 2 represents a single bond, a phenylene group, or an aliphatic hydrocarbylene group having 1 to 10 carbon atoms, and some of the -CH2- groups constituting the aliphatic hydrocarbylene group may be substituted with an ether bond, an ester bond, or a sulfonate ester bond. X 3 is a single bond, an ether bond, an ester bond, a carbonate bond or a urethane bond. R 1 and R 2 are each independently a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, or a phenyl group. 3. A positive resist material according to 1 or 2, wherein the repeating unit b is a repeating unit b1 in which the hydrogen atom of the carboxy group is substituted with an acid labile group, or a repeating unit b2 in which the hydrogen atom of the phenolic hydroxy group is substituted with an acid labile group. 4. A positive resist material according to 3, wherein the repeating unit b1 is represented by the following formula (b1) and the repeating unit b2 is represented by the following formula (b2). [ka] (In the formula, R A are each independently a hydrogen atom or a methyl group. Y 1 is a single bond, a phenylene group, a naphthylene group, or a linking group having 1 to 12 carbon atoms and containing an ester bond, an ether bond, or a lactone ring. Y 2 is a single bond, an ester bond or an amide bond. Y 3 is a single bond, an ether bond or an ester bond. R 11 and R 12 are each independently an acid labile group. R 13 is a fluorine atom, a trifluoromethyl group, a cyano group or a saturated hydrocarbyl group having 1 to 6 carbon atoms. R 14is a single bond or an alkanediyl group having 1 to 6 carbon atoms, and the alkanediyl group may contain an ether bond or an ester bond. a is 1 or 2, and b is an integer from 0 to 4, provided that 1≦a+b≦5. 5. The positive resist material of any one of 1 to 4, wherein the base polymer further contains a repeating unit c containing an adhesive group selected from a hydroxy group, a carboxy group, a lactone ring, a carbonate bond, a thiocarbonate bond, a carbonyl group, a cyclic acetal group, an ether bond, an ester bond, a sulfonate ester bond, a cyano group, an amide bond, -OC(=O)-S-, and -OC(=O)-NH-. 6. The positive resist material of any one of 1 to 5, wherein the base polymer further contains a repeating unit represented by any one of the following formulas (d1) to (d3): [ka] (In the formula, R A are each independently a hydrogen atom or a methyl group. Z 1 represents a single bond, an aliphatic hydrocarbylene group having 1 to 6 carbon atoms, a phenylene group, a naphthylene group, or a group having 7 to 18 carbon atoms obtained by combining these, or -OZ 11 -, -C(=O)-OZ 11 - or -C(=O)-NH-Z 11 -It is. Z 11 represents an aliphatic hydrocarbylene group having 1 to 6 carbon atoms, a phenylene group, a naphthylene group, or a group having 7 to 18 carbon atoms obtained by combining these, and may contain a carbonyl group, an ester bond, an ether bond, or a hydroxy group. Z 2 is a single bond or an ester bond. Z 3 is a single bond, -Z 31 -C(=O)-O-, -Z 31 -O- or -Z 31 -OC(=O)-. Z 31represents an aliphatic hydrocarbylene group having 1 to 12 carbon atoms, a phenylene group, or a group having 7 to 18 carbon atoms obtained by combining these, and may contain a carbonyl group, an ester bond, an ether bond, a bromine atom, or an iodine atom. Z 4 is a methylene group, a 2,2,2-trifluoro-1,1-ethanediyl group, or a carbonyl group. Z 5 represents a single bond, a methylene group, an ethylene group, a phenylene group, a fluorinated phenylene group, a phenylene group substituted with a trifluoromethyl group, -OZ 51 -, -C(=O)-OZ 51 - or -C(=O)-NH-Z 51 -It is. Z 51 represents an aliphatic hydrocarbylene group having 1 to 6 carbon atoms, a phenylene group, a fluorinated phenylene group, or a phenylene group substituted with a trifluoromethyl group, and may contain a carbonyl group, an ester bond, an ether bond, a halogen atom, or a hydroxy group. R 21 ~R 28 are each independently a halogen atom or a hydrocarbyl group having 1 to 20 carbon atoms which may contain a heteroatom. 23 and R 24 or R 26 and R 27 may be bonded to each other to form a ring together with the sulfur atom to which they are attached. M - is a non-nucleophilic counterion. 7. A positive resist material according to any one of 1 to 6, further comprising an acid generator. 8. A positive resist material according to any one of 1 to 7, further comprising an organic solvent. 9. A positive resist material according to any one of 1 to 8, further comprising a quencher. 10. A positive resist material according to any one of 1 to 9, further comprising a surfactant. 11. A pattern forming method comprising the steps of forming a resist film on a substrate using a positive resist material according to any one of 1 to 10, exposing the resist film to high-energy rays, and developing the exposed resist film using a developer. 12. The pattern formation method according to 11, wherein the high-energy beam is i-line, KrF excimer laser light, ArF excimer laser light, electron beam (EB), or EUV having a wavelength of 3 to 15 nm. [Effects of the Invention]

[0013] The positive resist material of the present invention has a high acid diffusion suppression effect, and when formed into a resist film, it exhibits high contrast in alkaline dissolution before and after exposure, high resolution, and good pattern shape, edge roughness, and CDU after exposure. Therefore, due to these excellent properties, it is highly practical and is particularly useful as a fine pattern forming material for photomasks used in VLSI manufacturing or EB lithography, and as a pattern forming material for EB or EUV exposure. The positive resist material of the present invention can be applied, for example, not only to lithography in semiconductor circuit formation, but also to the formation of mask circuit patterns, micromachines, and thin-film magnetic head circuits. DETAILED DESCRIPTION OF THE INVENTION

[0014] [Base polymer] The positive resist material of the present invention is characterized by comprising a base polymer that includes a repeating unit a having two triple bonds and a repeating unit b whose solubility in an alkaline developer is improved by the action of an acid.

[0015] The repeating unit a is preferably one represented by the following formula (a). [ka]

[0016] In formula (a), R A is a hydrogen atom or a methyl group.

[0017] In formula (a), X 1 is an ester bond or a phenylene group.

[0018] In formula (a), X 2represents a single bond, a phenylene group, or an aliphatic hydrocarbylene group having 1 to 10 carbon atoms, and the aliphatic hydrocarbylene group may be saturated or unsaturated. Specific examples thereof include alkanediyl groups having 1 to 10 carbon atoms, such as methanediyl group, ethane-1,2-diyl group, propane-1,3-diyl group, and butane-1,4-diyl group; cyclic saturated hydrocarbylene groups having 3 to 10 carbon atoms, such as cyclopentanediyl group, cyclohexanediyl group, norbornanediyl group, and adamantanediyl group; alkenediyl groups having 2 to 10 carbon atoms, such as vinylene group, propene-1,3-diyl group, and butene-1,4-diyl group; and alkynediyl groups having 2 to 10 carbon atoms, such as ethyne-1,2-diyl group, propyne-1,3-diyl group, and butyne-1,4-diyl group. In addition, a portion of the -CH2- constituting the aliphatic hydrocarbylene group may be substituted with an ether bond, an ester bond, or a sulfonate ester bond. Note that a portion of the -CH2- constituting the cyclic saturated hydrocarbylene group may be substituted to form a lactone ring or a sultone ring.

[0019] In formula (a), X 3 is a single bond, an ether bond, an ester bond, a carbonate bond or a urethane bond.

[0020] In formula (a), R 1 and R 2 are each independently a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, or a phenyl group. Examples of the alkyl group having 1 to 4 carbon atoms include a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a sec-butyl group, and a tert-butyl group. Among these, R 1 and R 2 is preferably a hydrogen atom, a methyl group, an ethyl group, or a phenyl group, more preferably a hydrogen atom.

[0021] Examples of monomers that provide the repeating unit a include, but are not limited to, the following: [ka]

[0022] [ka]

[0023] The compound having two triple bonds can be synthesized, for example, by an esterification reaction between an alcohol having two triple bonds and methacrylic acid chloride.

[0024] Repeating unit a has two triple bonds, and these weakly acidic triple bonds give it moderate alkali solubility. While alkali-soluble phenol groups aggregate through hydrogen bonding, triple bonds do not aggregate through hydrogen bonding, so aggregation between polymers can be suppressed, which makes the microscopic distance of acid diffusion uniform and results in uniform pattern dimensions after development.

[0025] The repeating unit b is preferably a repeating unit b1 in which the hydrogen atom of a carboxy group is substituted with an acid labile group, or a repeating unit b2 in which the hydrogen atom of a phenolic hydroxy group is substituted with an acid labile group.

[0026] Examples of the repeating units b1 and b2 include those represented by the following formulae (b1) and (b2), respectively. [ka]

[0027] In formulas (b1) and (b2), R A are each independently a hydrogen atom or a methyl group. 1 Y is a single bond, a phenylene group, a naphthylene group, or a linking group having 1 to 12 carbon atoms and containing an ester bond, an ether bond, or a lactone ring. 2 is a single bond, an ester bond or an amide bond. 3 is a single bond, an ether bond, or an ester bond. 11 and R 12 are each independently an acid labile group. 13R is a fluorine atom, a trifluoromethyl group, a cyano group, or a saturated hydrocarbyl group having 1 to 6 carbon atoms. 14 is a single bond or an alkanediyl group having 1 to 6 carbon atoms, and the alkanediyl group may contain an ether bond or an ester bond. a is 1 or 2. b is an integer of 0 to 4, provided that 1≦a+b≦5.

[0028] Examples of monomers that provide the repeating unit b1 include, but are not limited to, the following: A and R 11 is the same as above. [ka]

[0029] [ka]

[0030] Examples of the monomer that provides the repeating unit b2 include, but are not limited to, the following: A and R 12 is the same as above. [ka]

[0031] R 11 or R 12 The acid labile group represented by the formula (AL-1) may be selected from a variety of groups, and examples thereof include those represented by the following formulae (AL-1) to (AL-3). [ka] (In the formula, the dashed lines represent bonds.)

[0032] In formula (AL-1), c is an integer of 0 to 6. L1is a tertiary hydrocarbyl group having 4 to 20 carbon atoms, preferably 4 to 15 carbon atoms, a trihydrocarbylsilyl group in which each hydrocarbyl group is a saturated hydrocarbyl group having 1 to 6 carbon atoms, a carbonyl group, or a saturated hydrocarbyl group having 4 to 20 carbon atoms containing an ether bond or an ester bond, or a group represented by formula (AL-3). The tertiary hydrocarbyl group means a group obtained by eliminating a hydrogen atom from a tertiary carbon atom of a hydrocarbon.

[0033] R L1 The tertiary hydrocarbyl group represented by the formula (I) may be saturated or unsaturated, and may be branched or cyclic. Specific examples thereof include a tert-butyl group, a tert-pentyl group, a 1,1-diethylpropyl group, a 1-ethylcyclopentyl group, a 1-butylcyclopentyl group, a 1-ethylcyclohexyl group, a 1-butylcyclohexyl group, a 1-ethyl-2-cyclopentenyl group, a 1-ethyl-2-cyclohexenyl group, and a 2-methyl-2-adamantyl group. Examples of the trihydrocarbylsilyl group include a trimethylsilyl group, a triethylsilyl group, and a dimethyl-tert-butylsilyl group. The saturated hydrocarbyl group containing a carbonyl group, an ether bond, or an ester bond may be linear, branched, or cyclic, but is preferably cyclic. Specific examples thereof include a 3-oxocyclohexyl group, a 4-methyl-2-oxooxan-4-yl group, a 5-methyl-2-oxoxolan-5-yl group, a 2-tetrahydropyranyl group, and a 2-tetrahydrofuranyl group.

[0034] Examples of the acid labile group represented by formula (AL-1) include a tert-butoxycarbonyl group, a tert-butoxycarbonylmethyl group, a tert-pentyloxycarbonyl group, a tert-pentyloxycarbonylmethyl group, a 1,1-diethylpropyloxycarbonyl group, a 1,1-diethylpropyloxycarbonylmethyl group, a 1-ethylcyclopentyloxycarbonyl group, a 1-ethylcyclopentyloxycarbonylmethyl group, a 1-ethyl-2-cyclopentenyloxycarbonyl group, a 1-ethyl-2-cyclopentenyloxycarbonylmethyl group, a 1-ethoxyethoxycarbonylmethyl group, a 2-tetrahydropyranyloxycarbonylmethyl group, and a 2-tetrahydrofuranyloxycarbonylmethyl group.

[0035] Further, examples of the acid labile group represented by formula (AL-1) include groups represented by the following formulae (AL-1)-1 to (AL-1)-10. [ka] (In the formula, the dashed lines represent bonds.)

[0036] In formulae (AL-1)-1 to (AL-1)-10, c is the same as defined above. L8 are each independently a saturated hydrocarbyl group having 1 to 10 carbon atoms or an aryl group having 6 to 20 carbon atoms. L9 is a hydrogen atom or a saturated hydrocarbyl group having 1 to 10 carbon atoms. L10 is a saturated hydrocarbyl group having 2 to 10 carbon atoms or an aryl group having 6 to 20 carbon atoms. The saturated hydrocarbyl group may be linear, branched, or cyclic.

[0037] In formula (AL-2), R L2 and R L3are each independently a hydrogen atom or a saturated hydrocarbyl group having 1 to 18 carbon atoms, preferably 1 to 10. The saturated hydrocarbyl group may be linear, branched, or cyclic, and specific examples thereof include a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a sec-butyl group, a tert-butyl group, a cyclopentyl group, a cyclohexyl group, a 2-ethylhexyl group, and an n-octyl group.

[0038] In formula (AL-2), R L4 is a hydrocarbyl group having 1 to 18 carbon atoms, preferably 1 to 10, which may contain a heteroatom. The hydrocarbyl group may be saturated or unsaturated, and may be linear, branched, or cyclic. Examples of the hydrocarbyl group include saturated hydrocarbyl groups having 1 to 18 carbon atoms, and some of the hydrogen atoms may be substituted with hydroxy groups, alkoxy groups, oxo groups, amino groups, alkylamino groups, etc. Examples of such substituted saturated hydrocarbyl groups include those shown below. [ka] (In the formula, the dashed lines represent bonds.)

[0039] R L2 and R L3 and R L2 and R L4 and, or R L3 and R L4 may be bonded to each other to form a ring together with the carbon atom to which they are bonded, or together with the carbon atom and oxygen atom, and in this case, R L2 and R L3 , R L2 and R L4 , or R L3 and R L4 are each independently an alkanediyl group having 1 to 18 carbon atoms, preferably 1 to 10. The ring obtained by combining these groups preferably has 3 to 10 carbon atoms, more preferably 4 to 10 carbon atoms.

[0040] Among the acid labile groups represented by formula (AL-2), linear or branched ones include, but are not limited to, those represented by the following formulae (AL-2)-1 to (AL-2)-69, in which the dashed lines represent bonds. [ka]

[0041] [ka]

[0042] [ka]

[0043] [ka]

[0044] Among the acid labile groups represented by formula (AL-2), examples of cyclic groups include a tetrahydrofuran-2-yl group, a 2-methyltetrahydrofuran-2-yl group, a tetrahydropyran-2-yl group, and a 2-methyltetrahydropyran-2-yl group.

[0045] Further, examples of the acid labile group include groups represented by the following formula (AL-2a) or (AL-2b): The base polymer may be inter- or intramolecularly crosslinked by the acid labile group. [ka] (In the formula, the dashed lines represent bonds.)

[0046] In formula (AL-2a) or (AL-2b), R L11 and R L12 are each independently a hydrogen atom or a saturated hydrocarbyl group having 1 to 8 carbon atoms. The saturated hydrocarbyl group may be linear, branched, or cyclic. L11 and R L12may be bonded to each other to form a ring together with the carbon atoms to which they are attached, in which case R L11 and R L12 are each independently an alkanediyl group having 1 to 8 carbon atoms. L13 are each independently a saturated hydrocarbylene group having 1 to 10 carbon atoms. The saturated hydrocarbylene group may be linear, branched, or cyclic. d and e are each independently an integer of 0 to 10, preferably an integer of 0 to 5, and f is an integer of 1 to 7, preferably an integer of 1 to 3.

[0047] In formula (AL-2a) or (AL-2b), L A is an (f+1)-valent aliphatic saturated hydrocarbon group having 1 to 50 carbon atoms, an (f+1)-valent alicyclic saturated hydrocarbon group having 3 to 50 carbon atoms, an (f+1)-valent aromatic hydrocarbon group having 6 to 50 carbon atoms, or an (f+1)-valent heterocyclic group having 3 to 50 carbon atoms. In addition, some of the -CH2- groups may be substituted with groups containing hetero atoms, and some of the hydrogen atoms in these groups may be substituted with hydroxy groups, carboxy groups, acyl groups, or fluorine atoms. A As L, saturated hydrocarbon groups such as saturated hydrocarbylene groups having 1 to 20 carbon atoms, trivalent saturated hydrocarbon groups, and tetravalent saturated hydrocarbon groups, and arylene groups having 6 to 30 carbon atoms are preferred. The saturated hydrocarbon groups may be linear, branched, or cyclic. B is -C(=O)-O-, -NH-C(=O)-O- or -NH-C(=O)-NH-.

[0048] Examples of the crosslinked acetal group represented by formula (AL-2a) or (AL-2b) include groups represented by the following formulae (AL-2)-70 to (AL-2)-77. [ka] (In the formula, the dashed lines represent bonds.)

[0049] In formula (AL-3), R L5 , R L6 and R L7are each independently a hydrocarbyl group having 1 to 20 carbon atoms, which may contain heteroatoms such as oxygen, sulfur, nitrogen, or fluorine atoms. The hydrocarbyl group may be saturated or unsaturated, and may be linear, branched, or cyclic. Specific examples thereof include alkyl groups having 1 to 20 carbon atoms, cyclic saturated hydrocarbyl groups having 3 to 20 carbon atoms, alkenyl groups having 2 to 20 carbon atoms, cyclic unsaturated hydrocarbyl groups having 3 to 20 carbon atoms, and aryl groups having 6 to 10 carbon atoms. In addition, R L5 and R L6 and R L5 and R L7 and, or R L6 and R L7 may be bonded to each other to form an alicyclic ring having 3 to 20 carbon atoms together with the carbon atom to which they are bonded.

[0050] Examples of the group represented by formula (AL-3) include a tert-butyl group, a 1,1-diethylpropyl group, a 1-ethylnorbornyl group, a 1-methylcyclopentyl group, a 1-ethylcyclopentyl group, a 1-isopropylcyclopentyl group, a 1-methylcyclohexyl group, a 2-(2-methyl)adamantyl group, a 2-(2-ethyl)adamantyl group, and a tert-pentyl group.

[0051] Further, examples of the group represented by formula (AL-3) include groups represented by the following formulae (AL-3)-1 to (AL-3)-19. [ka] (In the formula, the dashed lines represent bonds.)

[0052] In formulas (AL-3)-1 to (AL-3)-19, R L14 are each independently a saturated hydrocarbyl group having 1 to 8 carbon atoms or an aryl group having 6 to 20 carbon atoms. L15 and R L17 are each independently a hydrogen atom or a saturated hydrocarbyl group having 1 to 20 carbon atoms. L16is an aryl group having 6 to 20 carbon atoms. The saturated hydrocarbyl group may be linear, branched, or cyclic. The aryl group is preferably a phenyl group. R F is a fluorine atom or a trifluoromethyl group, and g is an integer of 1 to 5.

[0053] Further examples of the acid labile group include groups represented by the following formula (AL-3)-20 or (AL-3)-21: The acid labile group may cause intramolecular or intermolecular crosslinking of the polymer. [ka] (In the formula, the dashed lines represent bonds.)

[0054] In formulas (AL-3)-20 and (AL-3)-21, R L14 is the same as above. R L18 is a (h+1)-valent saturated hydrocarbylene group having 1 to 20 carbon atoms or a (h+1)-valent arylene group having 6 to 20 carbon atoms, and may contain a heteroatom such as an oxygen atom, a sulfur atom, or a nitrogen atom. The saturated hydrocarbylene group may be linear, branched, or cyclic. h is an integer of 1 to 3.

[0055] Examples of the monomer that provides the repeating unit containing the acid labile group represented by formula (AL-3) include (meth)acrylate esters containing the exo structure represented by formula (AL-3)-22 below. [ka]

[0056] In formula (AL-3)-22, R A is the same as above. R Lc1 R is a saturated hydrocarbyl group having 1 to 8 carbon atoms or an optionally substituted aryl group having 6 to 20 carbon atoms. The saturated hydrocarbyl group may be linear, branched, or cyclic. Lc2 ~R Lc11are each independently a hydrogen atom or a hydrocarbyl group having 1 to 15 carbon atoms which may contain a heteroatom. Examples of the heteroatom include an oxygen atom. Examples of the hydrocarbyl group include an alkyl group having 1 to 15 carbon atoms and an aryl group having 6 to 15 carbon atoms. R Lc2 and R Lc3 and R Lc4 and R Lc6 and R Lc4 and R Lc7 and R Lc5 and R Lc7 and R Lc5 and R Lc11 and R Lc6 and R Lc10 and R Lc8 and R Lc9 and, or R Lc9 and R Lc10 may bond to each other to form a ring together with the carbon atom to which they are bonded, and in this case, the group participating in the bond is a hydrocarbylene group having 1 to 15 carbon atoms which may contain a heteroatom. Lc2 and R Lc11 and R Lc8 and R Lc11 and, or R Lc4 and R Lc6 The term "a" means that adjacent carbon atoms may bond to each other without any intervening bond to form a double bond. This formula also represents an enantiomer.

[0057] Here, examples of the monomer represented by formula (AL-3)-22 include those described in JP-A-2000-327633. Specific examples include, but are not limited to, the following. In the following formula, R A is the same as above. [ka]

[0058] Examples of monomers that provide repeating units containing an acid labile group represented by formula (AL-3) include (meth)acrylic acid esters containing a furandiyl group, a tetrahydrofurandiyl group, or an oxanorbornanediyl group represented by formula (AL-3)-23 below. [ka]

[0059] In formula (AL-3)-23, R A is the same as above. R Lc12 and R Lc13 are each independently a hydrocarbyl group having 1 to 10 carbon atoms. Lc12 and R Lc13 may be bonded to each other to form an alicyclic ring together with the carbon atoms to which they are attached. Lc14 is a furandiyl group, a tetrahydrofurandiyl group, or an oxanorbornanediyl group. Lc15 is a hydrocarbyl group having 1 to 10 carbon atoms which may contain a hydrogen atom or a heteroatom. The hydrocarbyl group may be linear, branched, or cyclic. Specific examples thereof include saturated hydrocarbyl groups having 1 to 10 carbon atoms.

[0060] Examples of the monomer represented by formula (AL-3)-23 include, but are not limited to, the following: A is the same as above, Ac is an acetyl group, and Me is a methyl group. [ka]

[0061] [ka]

[0062] In addition to the above acid labile groups, acid labile groups containing aromatic groups described in Japanese Patent Nos. 5,565,293, 5,434,983, 5,407,941, 5,655,756 and 5,655,755 can also be used.

[0063] The base polymer may further contain a repeating unit c containing an adhesive group selected from a hydroxy group, a carboxy group, a lactone ring, a carbonate bond, a thiocarbonate bond, a carbonyl group, a cyclic acetal group, an ether bond, an ester bond, a sulfonate ester bond, a cyano group, an amide bond, -OC(=O)-S-, and -OC(=O)-NH-.

[0064] Examples of monomers that provide the repeating unit c include, but are not limited to, those shown below. A is the same as above. [ka]

[0065] [ka]

[0066] [ka]

[0067] [ka]

[0068] [ka]

[0069] [ka]

[0070] [ka]

[0071] [ka]

[0072] [ka]

[0073] [ka]

[0074] [ka]

[0075] [ka]

[0076] The base polymer may further contain at least one repeating unit selected from the group consisting of a repeating unit represented by the following formula (d1) (hereinafter also referred to as repeating unit d1), a repeating unit represented by the following formula (d2) (hereinafter also referred to as repeating unit d2), and a repeating unit represented by the following formula (d3) (hereinafter also referred to as repeating unit d3). [ka]

[0077] In formulas (d1) to (d3), R A are each independently a hydrogen atom or a methyl group. 1 represents a single bond, an aliphatic hydrocarbylene group having 1 to 6 carbon atoms, a phenylene group, a naphthylene group, or a group having 7 to 18 carbon atoms obtained by combining these, or -OZ 11 -, -C(=O)-OZ 11 - or -C(=O)-NH-Z 11 -It is. Z 11Z is an aliphatic hydrocarbylene group having 1 to 6 carbon atoms, a phenylene group, a naphthylene group, or a group having 7 to 18 carbon atoms obtained by combining these, and may contain a carbonyl group, an ester bond, an ether bond, or a hydroxy group. 2 is a single bond or an ester bond. 3 is a single bond, -Z 31 -C(=O)-O-, -Z 31 -O- or -Z 31 -OC(=O)-. Z 31 represents an aliphatic hydrocarbylene group having 1 to 12 carbon atoms, a phenylene group, or a group having 7 to 18 carbon atoms obtained by combining these, and may contain a carbonyl group, an ester bond, an ether bond, a bromine atom, or an iodine atom. Z 4 is a methylene group, a 2,2,2-trifluoro-1,1-ethanediyl group, or a carbonyl group. 5 represents a single bond, a methylene group, an ethylene group, a phenylene group, a fluorinated phenylene group, a phenylene group substituted with a trifluoromethyl group, -OZ 51 -, -C(=O)-OZ 51 - or -C(=O)-NH-Z 51 -It is. Z 51 is an aliphatic hydrocarbylene group having 1 to 6 carbon atoms, a phenylene group, a fluorinated phenylene group, or a phenylene group substituted with a trifluoromethyl group, and may contain a carbonyl group, an ester bond, an ether bond, a halogen atom, or a hydroxy group. 1 , Z 11 , Z 31 and Z 51 The aliphatic hydrocarbylene group represented by the formula (I) may be saturated or unsaturated, and may be linear, branched, or cyclic.

[0078] In formulas (d1) to (d3), R 21 ~R 28are each independently a halogen atom or a hydrocarbyl group having 1 to 20 carbon atoms which may contain a heteroatom. Examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom. The hydrocarbyl group may be saturated or unsaturated, and may be linear, branched, or cyclic. Specific examples thereof include R in formulas (1-1) and (1-2) described below. 101 ~R 105 Examples include those similar to those exemplified in the explanation of .

[0079] Also, R 23 and R 24 or R 26 and R 27 may be bonded to each other to form a ring together with the sulfur atom to which they are bonded. In this case, the ring is the same as that described in the description of formula (1-1) below, where R 101 and R 102 and the sulfur atom to which they are bonded to form a ring, the same rings as those exemplified above can be mentioned.

[0080] In formula (d1), M - is a non-nucleophilic counter ion. Examples of the non-nucleophilic counter ion include halide ions such as chloride ion and bromide ion, fluoroalkylsulfonate ions such as triflate ion, 1,1,1-trifluoroethanesulfonate ion and nonafluorobutanesulfonate ion, arylsulfonate ions such as tosylate ion, benzenesulfonate ion, 4-fluorobenzenesulfonate ion and 1,2,3,4,5-pentafluorobenzenesulfonate ion, alkylsulfonate ions such as mesylate ion and butanesulfonate ion, imide ions such as bis(trifluoromethylsulfonyl)imide ion, bis(perfluoroethylsulfonyl)imide ion and bis(perfluorobutylsulfonyl)imide ion, and methide ions such as tris(trifluoromethylsulfonyl)methide ion and tris(perfluoroethylsulfonyl)methide ion.

[0081] Further examples of the non-nucleophilic counter ion include a sulfonate ion represented by the following formula (d1-1) in which the α-position is substituted with a fluorine atom, and a sulfonate ion represented by the following formula (d1-2) in which the α-position is substituted with a fluorine atom and the β-position is substituted with a trifluoromethyl group. [ka]

[0082] In formula (d1-1), R 31 is a hydrogen atom or a hydrocarbyl group having 1 to 20 carbon atoms, and the hydrocarbyl group may contain an ether bond, an ester bond, a carbonyl group, a lactone ring, or a fluorine atom. The hydrocarbyl group may be saturated or unsaturated, and may be linear, branched, or cyclic. Specific examples thereof include R in formula (1A') described below. 111 Examples of the hydrocarbyl group represented by the formula (I) include the same as those exemplified above.

[0083] In formula (d1-2), R 32 is a hydrogen atom, a hydrocarbyl group having 1 to 30 carbon atoms, or a hydrocarbyl carbonyl group having 2 to 30 carbon atoms, and the hydrocarbyl group and the hydrocarbyl carbonyl group may contain an ether bond, an ester bond, a carbonyl group, or a lactone ring. The hydrocarbyl moiety of the hydrocarbyl group and the hydrocarbyl carbonyl group may be saturated or unsaturated, and may be linear, branched, or cyclic. Specific examples thereof include R in formula (1A') described below. 111 Examples of the hydrocarbyl group represented by the formula (I) include the same as those exemplified above.

[0084] Examples of the cation of the monomer that gives the repeating unit d1 include, but are not limited to, the following: A is the same as above. [ka]

[0085] Specific examples of the cation of the monomer that gives the repeating unit d2 or d3 include the same as those exemplified as the cation of the sulfonium salt represented by formula (1-1) described below.

[0086] Examples of the anion of the monomer that gives the repeating unit d2 include, but are not limited to, those shown below. A is the same as above. [ka]

[0087] [ka]

[0088] [ka]

[0089] [ka]

[0090] [ka]

[0091] [ka]

[0092] [ka]

[0093] [ka]

[0094] [ka]

[0095] [ka]

[0096] [ka]

[0097] Examples of the anion of the monomer that gives the repeating unit d3 include, but are not limited to, those shown below. A is the same as above. [ka]

[0098] [ka]

[0099] The repeating units d1 to d3 function as an acid generator. By bonding the acid generator to the polymer main chain, acid diffusion is reduced, preventing a decrease in resolution due to blurring caused by acid diffusion. Furthermore, uniform dispersion of the acid generator improves LWR and CDU. Note that when a base polymer containing repeating units d1 to d3 (i.e., a polymer-bound acid generator) is used, the addition of an additive-type acid generator, which will be described later, can be omitted.

[0100] The base polymer may contain a repeating unit e containing an iodine atom. Examples of monomers that provide the repeating unit e include, but are not limited to, the following. In the following formula, R A is the same as above. [ka]

[0101] [ka]

[0102]

Chem.

[0103] The base polymer may contain a repeating unit f other than the repeating units described above. Examples of the repeating unit f include those derived from styrene, vinyl naphthalene, indene, acenaphthylene, coumarin, coumarone, etc.

[0104] In the base polymer, the content ratios of the repeating units a, b1, b2, c, d1, d2, d3, e, and f are preferably 0 < a < 1.0, 0 ≤ b1 ≤ 0.9, 0 ≤ b2 ≤ 0.9, 0.1 ≤ b1 + b2 ≤ 0.9, 0 ≤ c ≤  ≤ 0.9, 0 ≤ d1 ≤ 0.5, 0 ≤ d2 ≤ 0.5, 0 ≤ d3 ≤ 0.5, 0 ≤ d1 + d2 + d3 ≤ 0.5, 0 ≤ e ≤ 0.5, and 0 ≤ f ≤ 0.5; more preferably 0.01 ≤ a ≤ 0.8, 0 ≤ b1 ≤ 0.8, 0 ≤ b2 ≤ 0.8, 0.2 ≤ b1 + b2 ≤ 0.8, 0 ≤ c ≤ 0.8, 0 ≤ d1 ≤ 0.4, 0 ≤ d2 ≤ 0.4, 0 ≤ d3 ≤ 0.4, 0 ≤ d1 + d2 + d3 ≤ 0.4, 0 ≤ e ≤ 0.4, and 0 ≤ f ≤ 0.4; still more preferably 0.02 ≤ a ≤ 0.7, 0 ≤ b1 ≤ 0.7, 0 ≤ b2 ≤ 0.7, 0.25 ≤ b1 + b2 ≤ 0.7, 0 ≤ c ≤ 0.7, 0 ≤ d1 ≤ 0.3, 0 ≤ d2 ≤ 0.3, 0 ≤ d3 ≤ 0.3, ≤ 0 ≤ d1 + d2 + d3 ≤ 0.3, 0 ≤ e ≤ 0.3, and 0 ≤ f ≤ 0.3. However, a + b1 + b2 + c + d1 + d2 + d3 + e + f = 1.0.

[0105] To synthesize the base polymer, for example, a monomer that provides the repeating units described above may be heated in an organic solvent with a radical polymerization initiator added thereto to conduct polymerization.

[0106] Examples of organic solvents used during polymerization include toluene, benzene, tetrahydrofuran (THF), diethyl ether, and dioxane. Examples of polymerization initiators include 2,2'-azobisisobutyronitrile (AIBN), 2,2'-azobis(2,4-dimethylvaleronitrile), dimethyl 2,2-azobis(2-methylpropionate), benzoyl peroxide, and lauroyl peroxide. The polymerization temperature is preferably 50 to 80°C. The reaction time is preferably 2 to 100 hours, and more preferably 5 to 20 hours.

[0107] When a monomer containing a hydroxy group is copolymerized, the hydroxy group may be substituted with an acetal group that is easily deprotected by an acid, such as an ethoxyethoxy group, during polymerization, and then deprotected with a weak acid and water after polymerization. Alternatively, the hydroxy group may be substituted with an acetyl group, a formyl group, a pivaloyl group, or the like, and then subjected to alkaline hydrolysis after polymerization.

[0108] When copolymerizing hydroxystyrene or hydroxyvinylnaphthalene, acetoxystyrene or acetoxyvinylnaphthalene may be used instead of hydroxystyrene or hydroxyvinylnaphthalene, and after polymerization, the acetoxy group may be deprotected by the alkaline hydrolysis to give hydroxystyrene or hydroxyvinylnaphthalene.

[0109] The base that can be used in alkaline hydrolysis includes aqueous ammonia, triethylamine, etc. The reaction temperature is preferably −20 to 100° C., more preferably 0 to 60° C. The reaction time is preferably 0.2 to 100 hours, more preferably 0.5 to 20 hours.

[0110] The base polymer preferably has a weight average molecular weight (Mw) in terms of polystyrene measured by gel permeation chromatography (GPC) using THF as a solvent of 1,000 to 500,000, more preferably 2,000 to 30,000. If the Mw is too small, the resist material will have poor heat resistance, while if it is too large, the alkali solubility will be reduced, making it more likely to experience a footing phenomenon after pattern formation.

[0111] Furthermore, if the base polymer has a broad molecular weight distribution (Mw / Mn), the presence of low-molecular-weight and high-molecular-weight polymers may result in the appearance of foreign matter on the pattern after exposure, or the pattern shape may be deteriorated. As the pattern rule becomes finer, the effects of Mw and Mw / Mn tend to become greater. Therefore, in order to obtain a resist material that is suitable for use with fine pattern dimensions, it is preferable that the Mw / Mn of the base polymer has a narrow distribution of 1.0 to 2.0, particularly 1.0 to 1.5.

[0112] The base polymer may contain two or more polymers with different composition ratios, Mw, or Mw / Mn. Also, polymers containing different repeating units a may be blended together, or a polymer containing repeating unit a may be blended with a polymer not containing repeating unit a.

[0113] [Acid generator] The positive resist composition of the present invention may contain an acid generator that generates a strong acid (hereinafter also referred to as an additive-type acid generator). The strong acid here refers to a compound that has sufficient acidity to cause a deprotection reaction of the acid labile groups in the base polymer.

[0114] Examples of the acid generator include compounds (photoacid generators) that generate acid in response to actinic rays or radiation. The photoacid generator may be any compound that generates an acid upon exposure to high-energy rays, but is preferably one that generates a sulfonic acid, an imide acid, or a methide acid. Suitable photoacid generators include sulfonium salts, iodonium salts, sulfonyldiazomethane, N-sulfonyloxyimide, and oxime-O-sulfonate-type acid generators. Specific examples of photoacid generators include those described in paragraphs

[0122] to

[0142] of JP 2008-111103 A.

[0115] Furthermore, as the photoacid generator, a sulfonium salt represented by the following formula (1-1) or an iodonium salt represented by the following formula (1-2) can also be suitably used. [ka]

[0116] In formulas (1-1) and (1-2), R 101 ~R 105 are each independently a halogen atom or a hydrocarbyl group having 1 to 20 carbon atoms which may contain a heteroatom.

[0117] Examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom.

[0118] R 101 ~R 105The hydrocarbyl group having 1 to 20 carbon atoms represented by the formula (I) may be saturated or unsaturated, and may be linear, branched, or cyclic. Specific examples thereof include alkyl groups having 1 to 20 carbon atoms, such as methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, n-pentyl, n-hexyl, n-octyl, n-nonyl, n-decyl, undecyl, dodecyl, tridecyl, tetradecyl, pentadecyl, heptadecyl, octadecyl, nonadecyl, and icosyl groups; cyclic saturated hydrocarbyl groups having 3 to 20 carbon atoms, such as cyclopropyl, cyclopentyl, cyclohexyl, cyclopropylmethyl, 4-methylcyclohexyl, cyclohexylmethyl, norbornyl, and adamantyl groups; alkenyl groups having 2 to 20 carbon atoms, such as vinyl, propenyl, butenyl, and hexenyl groups; and ethynyl groups. alkynyl groups having 2 to 20 carbon atoms such as a propynyl group or a butynyl group; cyclic unsaturated aliphatic hydrocarbyl groups having 3 to 20 carbon atoms such as a cyclohexenyl group or a norbornenyl group; aryl groups having 6 to 20 carbon atoms such as a phenyl group, a methylphenyl group, an ethylphenyl group, an n-propylphenyl group, an isopropylphenyl group, an n-butylphenyl group, an isobutylphenyl group, a sec-butylphenyl group, a tert-butylphenyl group, a naphthyl group, a methylnaphthyl group, an ethylnaphthyl group, an n-propylnaphthyl group, an isopropylnaphthyl group, an n-butylnaphthyl group, an isobutylnaphthyl group, a sec-butylnaphthyl group or a tert-butylnaphthyl group; aralkyl groups having 7 to 20 carbon atoms such as a benzyl group or a phenethyl group; and groups obtained by combining these.

[0119] In addition, some or all of the hydrogen atoms of these groups may be substituted with a group containing a heteroatom such as an oxygen atom, a sulfur atom, a nitrogen atom or a halogen atom, and some of the -CH2- groups of these groups may be substituted with a group containing a heteroatom such as an oxygen atom, a sulfur atom or a nitrogen atom, resulting in the group containing a hydroxy group, a fluorine atom, a chlorine atom, a bromine atom, an iodine atom, a cyano group, a nitro group, a carbonyl group, an ether bond, an ester bond, a sulfonate ester bond, a carbonate bond, a lactone ring, a sultone ring, a carboxylic acid anhydride, a haloalkyl group, etc.

[0120] Also, R 101 and R 102 and may be bonded to each other to form a ring together with the sulfur atom to which they are bonded. In this case, the ring preferably has the following structure: [ka] (In the formula, the dashed line indicates R 103 )

[0121] Examples of the cation of the sulfonium salt represented by formula (1-1) include, but are not limited to, those shown below. [ka]

[0122] [ka]

[0123] [ka]

[0124] [ka]

[0125] [ka]

[0126]

change

[0127]

change

[0128]

change

[0129]

change

[0130]

change

[0131]

change

[0132]

change

[0133]

change

[0134]

change

[0135]

change

[0136] [ka]

[0137] [ka]

[0138] [ka]

[0139] [ka]

[0140] [ka]

[0141] [ka]

[0142] [ka]

[0143] [ka]

[0144] [ka]

[0145] Examples of the cation of the iodonium salt represented by formula (1-2) include, but are not limited to, the following: [ka]

[0146] [ka]

[0147] In formulas (1-1) and (1-2), Xa - is an anion selected from the following formulae (1A) to (1D). [ka]

[0148] In formula (1A), R fa is a hydrocarbyl group having 1 to 40 carbon atoms which may contain a fluorine atom or a heteroatom. The hydrocarbyl group may be saturated or unsaturated, and may be linear, branched, or cyclic. Specific examples thereof include R in formula (1A') described below. 111 Examples of the hydrocarbyl group represented by the formula (I) include the same as those exemplified above.

[0149] The anion represented by formula (1A) is preferably one represented by the following formula (1A'). [ka]

[0150] In formula (1A'), R HF is a hydrogen atom or a trifluoromethyl group, preferably a trifluoromethyl group. 111 is a hydrocarbyl group having 1 to 38 carbon atoms which may contain a heteroatom. The heteroatom is preferably an oxygen atom, a nitrogen atom, a sulfur atom, a halogen atom, or the like, and more preferably an oxygen atom. In order to obtain high resolution in the formation of a fine pattern, the hydrocarbyl group is particularly preferably one having 6 to 30 carbon atoms.

[0151] R 111The hydrocarbyl group represented by the formula (I) may be saturated or unsaturated, and may be linear, branched, or cyclic. Specific examples thereof include alkyl groups having 1 to 38 carbon atoms, such as a methyl group, an ethyl group, an n-propyl group, an isopropyl group, a butyl group, an isobutyl group, a sec-butyl group, a tert-butyl group, a pentyl group, a neopentyl group, a hexyl group, a heptyl group, a 2-ethylhexyl group, a nonyl group, an undecyl group, a tridecyl group, a pentadecyl group, a heptadecyl group, and an icosyl group; a cyclopentyl group, a cyclohexyl group, a 1-adamantyl group, a 2-adamantyl group, a 1-adamantylmethyl group, a norbornyl group, Examples include cyclic saturated hydrocarbyl groups having 3 to 38 carbon atoms, such as norbornylmethyl, tricyclodecanyl, tetracyclododecanyl, tetracyclododecanylmethyl, and dicyclohexylmethyl; unsaturated aliphatic hydrocarbyl groups having 2 to 38 carbon atoms, such as allyl and 3-cyclohexenyl; aryl groups having 6 to 38 carbon atoms, such as phenyl, 1-naphthyl, and 2-naphthyl; aralkyl groups having 7 to 38 carbon atoms, such as benzyl and diphenylmethyl; and groups obtained by combining these.

[0152] In addition, some or all of the hydrogen atoms in these groups may be substituted with a group containing a heteroatom such as an oxygen atom, sulfur atom, nitrogen atom, or halogen atom, and some of the -CH2- groups in these groups may be substituted with a group containing a heteroatom such as an oxygen atom, sulfur atom, or nitrogen atom, resulting in the group containing a hydroxy group, a fluorine atom, a chlorine atom, a bromine atom, an iodine atom, a cyano group, a nitro group, a carbonyl group, an ether bond, an ester bond, a sulfonate ester bond, a carbonate bond, a lactone ring, a sultone ring, a carboxylic acid anhydride, a haloalkyl group, etc. Examples of hydrocarbyl groups containing heteroatoms include a tetrahydrofuryl group, a methoxymethyl group, an ethoxymethyl group, a methylthiomethyl group, an acetamidomethyl group, a trifluoroethyl group, a (2-methoxyethoxy)methyl group, an acetoxymethyl group, a 2-carboxy-1-cyclohexyl group, a 2-oxopropyl group, a 4-oxo-1-adamantyl group, and a 3-oxocyclohexyl group.

[0153] Synthesis of sulfonium salts containing anions represented by formula (1A') is described in detail in JP-A Nos. 2007-145797, 2008-106045, 2009-7327, and 2009-258695. Sulfonium salts described in JP-A Nos. 2010-215608, 2012-41320, 2012-106986, and 2012-153644 are also suitable.

[0154] Examples of the anion represented by formula (1A) include the same anions as those exemplified as the anion represented by formula (1A) in JP 2018-197853 A.

[0155] In formula (1B), R fb1 and R fb2 are each independently a hydrocarbyl group having 1 to 40 carbon atoms which may contain a fluorine atom or a heteroatom. The hydrocarbyl group may be saturated or unsaturated, and may be linear, branched, or cyclic. Specific examples thereof include R in formula (1A'). 111 Examples of the hydrocarbyl group represented by R include the same as those exemplified above. fb1 and R fb2 is preferably a fluorine atom or a linear fluorinated alkyl group having 1 to 4 carbon atoms. fb1 and R fb2 means that the groups to which they are bonded (-CF2-SO2-N - -SO2-CF2-) together to form a ring, in which case, R fb1 and R fb2 The group obtained by bonding together is preferably a fluorinated ethylene group or a fluorinated propylene group.

[0156] In formula (1C), R fc1 , R fc2 and R fc3 are each independently a hydrocarbyl group having 1 to 40 carbon atoms which may contain a fluorine atom or a heteroatom. The hydrocarbyl group may be saturated or unsaturated, and may be linear, branched, or cyclic. Specific examples thereof include R in formula (1A').111 Examples of the hydrocarbyl group represented by R include the same as those exemplified above. fc1 , R fc2 and R fc3 is preferably a fluorine atom or a linear fluorinated alkyl group having 1 to 4 carbon atoms. fc1 and R fc2 are groups that are bonded together and bonded to each other (-CF2-SO2-C - -SO2-CF2-) together to form a ring, in which case, R fc1 and R fc2 The group obtained by bonding together is preferably a fluorinated ethylene group or a fluorinated propylene group.

[0157] In formula (1D), R fd is a hydrocarbyl group having 1 to 40 carbon atoms which may contain a heteroatom. The hydrocarbyl group may be saturated or unsaturated, and may be linear, branched, or cyclic. Specific examples thereof include R in formula (1A'). 111 Examples of the hydrocarbyl group represented by the formula (I) include the same as those exemplified above.

[0158] The synthesis of sulfonium salts containing anions represented by formula (1D) is described in detail in JP-A-2010-215608 and JP-A-2014-133723.

[0159] Examples of the anion represented by formula (1D) include the same anions as those exemplified as the anion represented by formula (1D) in JP 2018-197853 A.

[0160] Although the photoacid generator containing the anion represented by formula (1D) does not have a fluorine atom at the α-position of the sulfo group, it has two trifluoromethyl groups at the β-position, and therefore has sufficient acidity to cleave the acid labile groups in the base polymer, making it suitable for use as a photoacid generator.

[0161] As the photoacid generator, a compound represented by the following formula (2) can also be suitably used. [ka]

[0162] In formula (2), R 201 and R 202 R are each independently a halogen atom or a hydrocarbyl group having 1 to 30 carbon atoms which may contain a heteroatom. 203 is a hydrocarbylene group having 1 to 30 carbon atoms which may contain a heteroatom. 201 , R 202 and R 203 Any two of these may be bonded to each other to form a ring together with the sulfur atom to which they are bonded. In this case, the ring may be any of the groups represented by R 101 and R 102 and the sulfur atom to which they are bonded to form a ring, the same rings as those exemplified above can be mentioned.

[0163] R 201 and R 202 The hydrocarbyl group represented by the formula (I) may be saturated or unsaturated, and may be linear, branched, or cyclic. Specific examples thereof include alkyl groups having 1 to 30 carbon atoms, such as a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a sec-butyl group, a tert-butyl group, an n-pentyl group, a tert-pentyl group, an n-hexyl group, an n-octyl group, a 2-ethylhexyl group, an n-nonyl group, and an n-decyl group; a cyclopentyl group, a cyclohexyl group, a cyclopentylmethyl group, a cyclopentylethyl group, a cyclopentylbutyl group, a cyclohexylmethyl group, a cyclohexylethyl group, a cyclohexylbutyl group, a norbornyl group, and a tricyclo[5.2.1.0] 2,6cyclic saturated hydrocarbyl groups having 3 to 30 carbon atoms such as a phenyl group, a methylphenyl group, an ethylphenyl group, an n-propylphenyl group, an isopropylphenyl group, an n-butylphenyl group, an isobutylphenyl group, a sec-butylphenyl group, a tert-butylphenyl group, a naphthyl group, a methylnaphthyl group, an ethylnaphthyl group, an n-propylnaphthyl group, an isopropylnaphthyl group, an n-butylnaphthyl group, an isobutylnaphthyl group, a sec-butylnaphthyl group, a tert-butylnaphthyl group, an anthracenyl group, and the like; and groups obtained by combining these. In addition, some or all of the hydrogen atoms of these groups may be substituted with a group containing a heteroatom such as an oxygen atom, a sulfur atom, a nitrogen atom or a halogen atom, and some of the -CH2- groups of these groups may be substituted with a group containing a heteroatom such as an oxygen atom, a sulfur atom or a nitrogen atom, resulting in the group containing a hydroxy group, a fluorine atom, a chlorine atom, a bromine atom, an iodine atom, a cyano group, a nitro group, a carbonyl group, an ether bond, an ester bond, a sulfonate ester bond, a carbonate bond, a lactone ring, a sultone ring, a carboxylic acid anhydride, a haloalkyl group, etc.

[0164] R 203The hydrocarbylene group represented by the formula (I) may be saturated or unsaturated, and may be linear, branched, or cyclic. Specific examples thereof include alkanediyl groups having 1 to 30 carbon atoms, such as methanediyl group, ethane-1,1-diyl group, ethane-1,2-diyl group, propane-1,3-diyl group, butane-1,4-diyl group, pentane-1,5-diyl group, hexane-1,6-diyl group, heptane-1,7-diyl group, octane-1,8-diyl group, nonane-1,9-diyl group, decane-1,10-diyl group, undecane-1,11-diyl group, dodecane-1,12-diyl group, tridecane-1,13-diyl group, tetradecane-1,14-diyl group, pentadecane-1,15-diyl group, hexadecane-1,16-diyl group, and heptadecane-1,17-diyl group; cyclopentanediyl group, cyclohexene-1,18-diyl group, and the like. Examples of the alkylene groups include cyclic saturated hydrocarbylene groups having 3 to 30 carbon atoms, such as xanediyl, norbornanediyl, and adamantanediyl; arylene groups having 6 to 30 carbon atoms, such as phenylene, methylphenylene, ethylphenylene, n-propylphenylene, isopropylphenylene, n-butylphenylene, isobutylphenylene, sec-butylphenylene, tert-butylphenylene, naphthylene, methylnaphthylene, ethylnaphthylene, n-propylnaphthylene, isopropylnaphthylene, n-butylnaphthylene, isobutylnaphthylene, sec-butylnaphthylene, and tert-butylnaphthylene; and groups obtained by combining these groups. In addition, some or all of the hydrogen atoms of these groups may be substituted with a group containing a heteroatom such as an oxygen atom, a sulfur atom, a nitrogen atom, or a halogen atom, and some of the -CH2- groups of these groups may be substituted with a group containing a heteroatom such as an oxygen atom, a sulfur atom, or a nitrogen atom, resulting in the group containing a hydroxy group, a fluorine atom, a chlorine atom, a bromine atom, an iodine atom, a cyano group, a nitro group, a carbonyl group, an ether bond, an ester bond, a sulfonate ester bond, a carbonate bond, a lactone ring, a sultone ring, a carboxylic acid anhydride, a haloalkyl group, etc. The heteroatom is preferably an oxygen atom.

[0165] In formula (2), L Cis a single bond, an ether bond, or a hydrocarbylene group having 1 to 20 carbon atoms which may contain a heteroatom. The hydrocarbylene group may be saturated or unsaturated, and may be linear, branched, or cyclic. Specific examples thereof include R 203 Examples of the hydrocarbylene group represented by the formula (I) include the same as those exemplified above.

[0166] In formula (2), X A , X B , X C and X D are each independently a hydrogen atom, a fluorine atom, or a trifluoromethyl group, provided that X A , X B , X C and X D At least one of the groups is a fluorine atom or a trifluoromethyl group.

[0167] In formula (2), t is an integer of 0 to 3.

[0168] The photoacid generator represented by formula (2) is preferably one represented by the following formula (2'). [ka]

[0169] In formula (2'), L C is the same as above. R HF is a hydrogen atom or a trifluoromethyl group, preferably a trifluoromethyl group. 301 , R 302 and R 303 are each independently a hydrocarbyl group having 1 to 20 carbon atoms which may contain a hydrogen atom or a heteroatom. The hydrocarbyl group may be saturated or unsaturated, and may be linear, branched, or cyclic. Specific examples thereof include R in formula (1A'). 111 Examples of the hydrocarbyl group include the same as those exemplified above. Each of x and y is independently an integer of 0 to 5, and z is an integer of 0 to 4.

[0170] Examples of the photoacid generator represented by formula (2) include the same compounds as those exemplified as the photoacid generator represented by formula (2) in JP-A-2017-026980.

[0171] Among the photoacid generators, those containing an anion represented by formula (1A') or (1D) are particularly preferred because of their small acid diffusion and excellent solubility in solvents. Also, those represented by formula (2') are particularly preferred because of their extremely small acid diffusion.

[0172] The photoacid generator may also be a sulfonium salt or iodonium salt containing an anion having an aromatic ring substituted with an iodine atom or a bromine atom, such as those represented by the following formula (3-1) or (3-2): [ka]

[0173] In formulas (3-1) and (3-2), p is an integer that satisfies 1≦p≦3. q and r are integers that satisfy 1≦q≦5, 0≦r≦3, and 1≦q+r≦5. q is preferably an integer that satisfies 1≦q≦3, more preferably 2 or 3. r is preferably an integer that satisfies 0≦r≦2.

[0174] In formulas (3-1) and (3-2), X BI is an iodine atom or a bromine atom, and when p and / or q is 2 or more, they may be the same or different.

[0175] In formulas (3-1) and (3-2), L 1 is a single bond, an ether bond, an ester bond, or a saturated hydrocarbylene group having 1 to 6 carbon atoms which may contain an ether bond or an ester bond. The saturated hydrocarbylene group may be linear, branched, or cyclic.

[0176] In formulas (3-1) and (3-2), L 2represents a single bond or a divalent linking group having 1 to 20 carbon atoms when p is 1, and represents a (p+1)-valent linking group having 1 to 20 carbon atoms when p is 2 or 3, and the linking group may contain an oxygen atom, a sulfur atom, or a nitrogen atom.

[0177] In formulas (3-1) and (3-2), R 401 is a hydroxy group, a carboxy group, a fluorine atom, a chlorine atom, a bromine atom or an amino group, or a hydrocarbyl group having 1 to 20 carbon atoms, a hydrocarbyloxy group having 1 to 20 carbon atoms, a hydrocarbylcarbonyl group having 2 to 20 carbon atoms, a hydrocarbyloxycarbonyl group having 2 to 20 carbon atoms, a hydrocarbylcarbonyloxy group having 2 to 20 carbon atoms or a hydrocarbylsulfonyloxy group having 1 to 20 carbon atoms which may contain a fluorine atom, a chlorine atom, a bromine atom, a hydroxy group, an amino group or an ether bond, or 401A )(R 401B ), -N(R 401C )-C(=O)-R 401D or -N(R 401C )-C(=O)-OR 401D R 401A and R 401B are each independently a hydrogen atom or a saturated hydrocarbyl group having 1 to 6 carbon atoms. 401C is a hydrogen atom or a saturated hydrocarbyl group having 1 to 6 carbon atoms, and may contain a halogen atom, a hydroxy group, a saturated hydrocarbyloxy group having 1 to 6 carbon atoms, a saturated hydrocarbylcarbonyl group having 2 to 6 carbon atoms, or a saturated hydrocarbylcarbonyloxy group having 2 to 6 carbon atoms. 401Dis an aliphatic hydrocarbyl group having 1 to 16 carbon atoms, an aryl group having 6 to 12 carbon atoms, or an aralkyl group having 7 to 15 carbon atoms, and may contain a halogen atom, a hydroxy group, a saturated hydrocarbyloxy group having 1 to 6 carbon atoms, a saturated hydrocarbylcarbonyl group having 2 to 6 carbon atoms, or a saturated hydrocarbylcarbonyloxy group having 2 to 6 carbon atoms. The aliphatic hydrocarbyl group may be saturated or unsaturated and may be linear, branched, or cyclic. The hydrocarbyl group, hydrocarbyloxy group, hydrocarbylcarbonyl group, hydrocarbyloxycarbonyl group, hydrocarbylcarbonyloxy group, and hydrocarbylsulfonyloxy group may be linear, branched, or cyclic. When p and / or r is 2 or more, each R 401 may be the same or different from each other.

[0178] Of these, R 401 Examples of the hydroxyl group include -N(R 401C )-C(=O)-R 401D , -N(R 401C )-C(=O)-OR 401D , a fluorine atom, a chlorine atom, a bromine atom, a methyl group, a methoxy group, and the like are preferred.

[0179] In formulas (3-1) and (3-2), Rf 1 ~Rf 4 are each independently a hydrogen atom, a fluorine atom, or a trifluoromethyl group, and at least one of them is a fluorine atom or a trifluoromethyl group. 1 and Rf 2 may combine to form a carbonyl group. 3 and Rf 4 are preferably both fluorine atoms.

[0180] In formulas (3-1) and (3-2), R 402 ~R 406are each independently a hydrocarbyl group having 1 to 20 carbon atoms which may contain a halogen atom or a heteroatom. The hydrocarbyl group may be saturated or unsaturated, and may be linear, branched, or cyclic. Specific examples thereof include R 101 ~R 105 Examples of the hydrocarbyl group represented by the formula (I) include the same as those exemplified above. In addition, some or all of the hydrogen atoms of these groups may be substituted with a hydroxy group, a carboxy group, a halogen atom, a cyano group, a nitro group, a mercapto group, a sultone group, a sulfone group, or a sulfonium salt-containing group, and some of the -CH2- groups of these groups may be substituted with an ether bond, an ester bond, a carbonyl group, an amide bond, a carbonate bond, or a sulfonate ester bond. 402 and R 403 may be bonded to each other to form a ring together with the sulfur atom to which they are bonded. In this case, the ring is the same as that described for R in the explanation of formula (1-1). 101 and R 102 and the sulfur atom to which they are bonded to form a ring, the same rings as those exemplified above can be mentioned.

[0181] Examples of the cation of the sulfonium salt represented by formula (3-1) include the same as those exemplified as the cation of the sulfonium salt represented by formula (1-1). Examples of the cation of the iodonium salt represented by formula (3-2) include the same as those exemplified as the cation of the iodonium salt represented by formula (1-2).

[0182] Examples of the anion of the onium salt represented by formula (3-1) or (3-2) include, but are not limited to, those shown below. BI is the same as above. [ka]

[0183] [ka]

[0184]

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[0185]

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[0186]

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[0187]

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[0188]

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[0189]

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[0190]

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[0191]

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[0192]

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[0193]

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[0194]

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[0195]

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[0196]

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[0197]

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[0198]

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[0199]

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[0200]

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[0201]

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[0202]

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[0203]

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[0204]

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[0205] When the positive resist material of the present invention contains an additive acid generator, the amount thereof is preferably 0.1 to 50 parts by mass, more preferably 1 to 40 parts by mass, per 100 parts by mass of the base polymer. The additive acid generators may be used alone, or in combination of two or more. When the base polymer contains repeating units d1 to d3 and / or when the additive acid generator is included, the positive resist material of the present invention can function as a chemically amplified positive resist material.

[0206] [Organic solvents] The positive resist material of the present invention may contain an organic solvent. The organic solvent is not particularly limited as long as it can dissolve the components described above and below. Examples of the organic solvent include ketones such as cyclohexanone, cyclopentanone, methyl-2-n-pentyl ketone, and 2-heptanone, as described in paragraphs

[0144] and

[0145] of JP-A No. 2008-111103; alcohols such as 3-methoxybutanol, 3-methyl-3-methoxybutanol, 1-methoxy-2-propanol, 1-ethoxy-2-propanol, and diacetone alcohol; propylene glycol monomethyl ether, ethylene glycol monomethyl ether, propylene glycol monoethyl ether, ethylene glycol monoethyl ether, and propylene glycol monomethyl ether. Examples of the esters include ethers such as pyrene glycol dimethyl ether and diethylene glycol dimethyl ether; esters such as propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, ethyl lactate (L-form), ethyl lactate (D-form), ethyl lactate (DL-form), ethyl pyruvate, butyl acetate, methyl 3-methoxypropionate, ethyl 3-ethoxypropionate, tert-butyl acetate, tert-butyl propionate, and propylene glycol mono tert-butyl ether acetate; and lactones such as γ-butyrolactone.

[0207] In the positive resist composition of the present invention, the content of the organic solvent is preferably 100 to 10,000 parts by mass, and more preferably 200 to 8,000 parts by mass, per 100 parts by mass of the base polymer. The organic solvents may be used singly or in combination of two or more.

[0208] [Quencher] The positive resist material of the present invention may contain a quencher. A quencher is a compound that can trap the acid generated by the acid generator in the resist material, thereby preventing the acid from diffusing into unexposed areas.

[0209] Examples of the quencher include conventional basic compounds. Examples of conventional basic compounds include primary, secondary, and tertiary aliphatic amines, mixed amines, aromatic amines, heterocyclic amines, nitrogen-containing compounds having a carboxyl group, nitrogen-containing compounds having a sulfonyl group, nitrogen-containing compounds having a hydroxyl group, nitrogen-containing compounds having a hydroxyphenyl group, alcoholic nitrogen-containing compounds, amides, imides, and carbamates. Particularly preferred are the primary, secondary, and tertiary amine compounds described in paragraphs

[0146] to

[0164] of JP 2008-111103 A, particularly amine compounds having a hydroxyl group, an ether bond, an ester bond, a lactone ring, a cyano group, or a sulfonate ester bond, and compounds having a carbamate group described in Japanese Patent No. 3790649 A. Addition of such basic compounds can further suppress the diffusion rate of acid in the resist film and correct the shape.

[0210] Further, examples of the quencher include onium salts such as sulfonium salts, iodonium salts, and ammonium salts of sulfonic acids and carboxylic acids not fluorinated at the α-position, as described in JP-A-2008-158339. Sulfonic acids, imide acids, or methide acids fluorinated at the α-position are necessary for deprotecting the acid labile group of a carboxylic acid ester, and the sulfonic acids or carboxylic acids not fluorinated at the α-position are released by salt exchange with onium salts not fluorinated at the α-position. Sulfonic acids and carboxylic acids not fluorinated at the α-position do not undergo deprotection reactions, and therefore function as quenchers.

[0211] Examples of such quenchers include a compound represented by the following formula (4) (onium salt of sulfonic acid not fluorinated at the α-position) and a compound represented by the following formula (5) (onium salt of carboxylic acid). [ka]

[0212] In formula (4), R 501 represents a hydrocarbyl group having 1 to 40 carbon atoms which may contain a hydrogen atom or a heteroatom, but excludes those in which the hydrogen atom bonded to the carbon atom at the α-position of the sulfo group is substituted with a fluorine atom or a fluoroalkyl group.

[0213] The hydrocarbyl group may be saturated or unsaturated, and may be linear, branched, or cyclic. Specific examples thereof include alkyl groups having 1 to 40 carbon atoms, such as methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, tert-pentyl, n-pentyl, n-hexyl, n-octyl, 2-ethylhexyl, n-nonyl, and n-decyl; cyclopentyl, cyclohexyl, cyclopentylmethyl, cyclopentylethyl, cyclopentylbutyl, cyclohexylmethyl, cyclohexylethyl, cyclohexylbutyl, norbornyl, and tricyclo[5.2.1.0]. 2,6]Cyclic saturated hydrocarbyl groups having 3 to 40 carbon atoms such as decanyl group, adamantyl group, and adamantylmethyl group; C2 to 40 alkenyl groups such as vinyl group, allyl group, propenyl group, butenyl group, and hexenyl group; C3 to 40 unsaturated aliphatic hydrocarbyl groups such as cyclohexenyl group; phenyl group, naphthyl group, alkylphenyl group (2-methylphenyl group, 3-methylphenyl group, 4-methylphenyl group, 4-ethylphenyl group, 4-tert-butyl ... Examples of the alkyl groups include aryl groups having 6 to 40 carbon atoms, such as aryl groups (e.g., t-butylphenyl group, 4-n-butylphenyl group), dialkylphenyl groups (e.g., 2,4-dimethylphenyl group, 2,4,6-triisopropylphenyl group), alkylnaphthyl groups (e.g., methylnaphthyl group, ethylnaphthyl group), and dialkylnaphthyl groups (e.g., dimethylnaphthyl group, diethylnaphthyl group); and aralkyl groups having 7 to 40 carbon atoms, such as benzyl group, 1-phenylethyl group, and 2-phenylethyl group.

[0214] Furthermore, some of the hydrogen atoms of these groups may be substituted with groups containing heteroatoms such as oxygen atoms, sulfur atoms, nitrogen atoms, and halogen atoms, and some of the -CH2- groups of these groups may be substituted with groups containing heteroatoms such as oxygen atoms, sulfur atoms, and nitrogen atoms, resulting in the group containing a hydroxy group, a cyano group, a carbonyl group, an ether bond, an ester bond, a sulfonate ester bond, a carbonate bond, a lactone ring, a sultone ring, a carboxylic acid anhydride, a haloalkyl group, etc. Examples of the hydrocarbyl group containing a heteroatom include heteroaryl groups such as thienyl and indolyl; alkoxyphenyl groups such as 4-hydroxyphenyl, 4-methoxyphenyl, 3-methoxyphenyl, 2-methoxyphenyl, 4-ethoxyphenyl, 4-tert-butoxyphenyl, and 3-tert-butoxyphenyl; alkoxynaphthyl groups such as methoxynaphthyl, ethoxynaphthyl, n-propoxynaphthyl, and n-butoxynaphthyl; dialkoxynaphthyl groups such as dimethoxynaphthyl and diethoxynaphthyl; and aryloxoalkyl groups such as 2-aryl-2-oxoethyl, 2-(1-naphthyl)-2-oxoethyl, and 2-(2-naphthyl)-2-oxoethyl.

[0215] In formula (5), R 502 R is a hydrocarbyl group having 1 to 40 carbon atoms which may contain a heteroatom. 502 Examples of the hydrocarbyl group represented by R 501 Other specific examples include fluorine-containing alkyl groups such as a trifluoromethyl group, a trifluoroethyl group, a 2,2,2-trifluoro-1-methyl-1-hydroxyethyl group, and a 2,2,2-trifluoro-1-(trifluoromethyl)-1-hydroxyethyl group; and fluorine-containing aryl groups such as a pentafluorophenyl group and a 4-trifluoromethylphenyl group.

[0216] In equations (4) and (5), Mq + is an onium cation. The onium cation is preferably a sulfonium cation, an iodonium cation, or an ammonium cation, and more preferably a sulfonium cation or an iodonium cation. Examples of the sulfonium cation include the same as those exemplified as the cation of the sulfonium salt represented by formula (1-1). Examples of the iodonium cation include the same as those exemplified as the cation of the iodonium salt represented by formula (1-2).

[0217] As the quencher, a sulfonium salt of an iodinated benzene ring-containing carboxylic acid represented by the following formula (6) can also be suitably used. [ka]

[0218] In formula (6), R 601represents a hydroxy group, a fluorine atom, a chlorine atom, a bromine atom, an amino group, a nitro group, a cyano group, or a saturated hydrocarbyl group having 1 to 6 carbon atoms, a saturated hydrocarbyloxy group having 1 to 6 carbon atoms, a saturated hydrocarbylcarbonyloxy group having 2 to 6 carbon atoms, or a saturated hydrocarbylsulfonyloxy group having 1 to 4 carbon atoms, in which some or all of the hydrogen atoms may be substituted with halogen atoms, or -N(R 601A )-C(=O)-R 601B or -N(R 601A )-C(=O)-OR 601B R 601A is a hydrogen atom or a saturated hydrocarbyl group having 1 to 6 carbon atoms. 601B is a saturated hydrocarbyl group having 1 to 6 carbon atoms or an unsaturated aliphatic hydrocarbyl group having 2 to 8 carbon atoms.

[0219] In formula (6), x' is an integer of 1 to 5. y' is an integer of 0 to 3. z' is an integer of 1 to 3. L 11 is a single bond or a (z'+1)-valent linking group having 1 to 20 carbon atoms, and may contain at least one selected from an ether bond, a carbonyl group, an ester bond, an amide bond, a sultone ring, a lactam ring, a carbonate bond, a halogen atom, a hydroxy group, and a carboxy group. The saturated hydrocarbyl group, saturated hydrocarbyloxy group, saturated hydrocarbylcarbonyloxy group, and saturated hydrocarbylsulfonyloxy group may be linear, branched, or cyclic. When y' and / or z' is 2 or more, each R 601 may be the same or different from each other.

[0220] In formula (6), R 602 , R 603 and R 604 are each independently a hydrocarbyl group having 1 to 20 carbon atoms which may contain a halogen atom or a heteroatom. The hydrocarbyl group may be saturated or unsaturated, and may be linear, branched, or cyclic. Specific examples thereof include R in formulas (1-1) and (1-2). 101 ~R 105Examples of the hydrocarbyl group represented by the formula (I) include the same as those exemplified above. In addition, some or all of the hydrogen atoms of these groups may be substituted with a hydroxy group, a carboxy group, a halogen atom, an oxo group, a cyano group, a nitro group, a sultone group, a sulfone group, or a sulfonium salt-containing group, and some of the -CH2- groups of these groups may be substituted with an ether bond, an ester bond, a carbonyl group, an amide bond, a carbonate bond, or a sulfonate ester bond. 602 and R 603 and may be bonded to each other to form a ring together with the sulfur atom to which they are attached.

[0221] Specific examples of the compound represented by formula (6) include those described in JP-A-2017-219836.

[0222] Another example of the quencher is the polymer-type quencher described in JP 2008-239918 A. This quencher enhances the rectangularity of the resist pattern by orienting on the surface of the resist film. The polymer-type quencher also has the effect of preventing pattern thinning and rounding of the pattern top when a protective film for immersion lithography is applied.

[0223] When the positive resist composition of the present invention contains the quencher, the content thereof is preferably 0 to 5 parts by mass, more preferably 0 to 4 parts by mass, relative to 100 parts by mass of the base polymer. The quencher may be used alone, or two or more types may be used in combination.

[0224] [Other ingredients] The positive resist composition of the present invention may contain, in addition to the above-mentioned components, surfactants, dissolution inhibitors, water repellency improvers, acetylene alcohols, and the like.

[0225] Examples of the surfactant include those described in paragraphs

[0165] and

[0166] of JP 2008-111103 A. Adding a surfactant can further improve or control the coatability of the resist material. When the positive resist material of the present invention contains the surfactant, the content thereof is preferably 0.0001 to 10 parts by mass per 100 parts by mass of the base polymer. The surfactant may be used alone or in combination of two or more types.

[0226] By incorporating a dissolution inhibitor into the positive resist composition of the present invention, the difference in dissolution rate between exposed and unexposed areas can be further increased, resulting in improved resolution. Examples of dissolution inhibitors include compounds having a molecular weight of preferably 100 to 1,000, more preferably 150 to 800, containing two or more phenolic hydroxy groups in the molecule, in which the hydrogen atoms of the phenolic hydroxy groups have been substituted with acid labile groups at a rate of 0 to 100 mol % overall, and compounds containing carboxy groups in the molecule, in which the hydrogen atoms of the carboxy groups have been substituted with acid labile groups at an average rate of 50 to 100 mol % overall. Specific examples include compounds in which the hydrogen atoms of the hydroxyl groups or carboxyl groups of bisphenol A, trisphenol, phenolphthalein, cresol novolak, naphthalenecarboxylic acid, adamantanecarboxylic acid, and cholic acid have been substituted with acid labile groups. These compounds are described, for example, in paragraphs

[0155] to

[0178] of JP 2008-122932 A.

[0227] When the positive resist composition of the present invention contains the dissolution inhibitor, the content thereof is preferably 0 to 50 parts by mass, and more preferably 5 to 40 parts by mass, relative to 100 parts by mass of the base polymer. The dissolution inhibitor may be used alone or in combination of two or more types.

[0228] The water repellency improver improves the water repellency of the resist film surface and can be used in immersion lithography without a topcoat. Preferred examples of the water repellency improver include polymers containing fluorinated alkyl groups and polymers containing a specific 1,1,1,3,3,3-hexafluoro-2-propanol residue structure, with those exemplified in JP-A Nos. 2007-297590 and 2008-111103 being more preferred. The water repellency improver must be soluble in an alkaline developer or an organic solvent developer. The water repellency improver having the specific 1,1,1,3,3,3-hexafluoro-2-propanol residue described above has good solubility in the developer. As a water repellency improver, polymers containing repeating units containing an amino group or an amine salt are highly effective in preventing the evaporation of acid during PEB and preventing poor opening of the hole pattern after development. When the positive resist composition of the present invention contains a water repellency improver, the content thereof is preferably 0 to 20 parts by mass, and more preferably 0.5 to 10 parts by mass, relative to 100 parts by mass of the base polymer. The water repellency improvers may be used alone or in combination of two or more.

[0229] Examples of the acetylene alcohols include those described in paragraphs

[0179] to

[0182] of JP 2008-122932 A. When the positive resist composition of the present invention contains an acetylene alcohol, the content thereof is preferably 0 to 5 parts by mass per 100 parts by mass of the base polymer. The acetylene alcohols may be used alone or in combination of two or more.

[0230] [Pattern formation method] When the positive resist material of the present invention is used in the manufacture of various integrated circuits, known lithography techniques can be applied. For example, a pattern formation method can include a method comprising the steps of forming a resist film on a substrate using the above-mentioned positive resist material, exposing the resist film to high-energy rays, and developing the exposed resist film using a developer.

[0231] First, the positive resist material of the present invention is applied to a substrate for integrated circuit manufacturing (Si, SiO2, SiN, SiON, TiN, WSi, BPSG, SOG, organic antireflective coating, etc.) or a substrate for mask circuit manufacturing (Cr, CrO, CrON, MoSi2, SiO2, etc.) by an appropriate coating method such as spin coating, roll coating, flow coating, dip coating, spray coating, doctor coating, etc., to a coating thickness of 0.01 to 2 μm. This is then prebaked on a hot plate, preferably at 60 to 150°C for 10 seconds to 30 minutes, more preferably at 80 to 120°C for 30 seconds to 20 minutes, to form a resist film.

[0232] Next, the resist film is exposed to high-energy radiation. Examples of the high-energy radiation include ultraviolet radiation, far ultraviolet radiation, EB, EUV radiation with a wavelength of 3 to 15 nm, i-rays, X-rays, soft X-rays, excimer laser light, gamma rays, and synchrotron radiation. When ultraviolet radiation, far ultraviolet radiation, EUV, X-rays, soft X-rays, excimer laser light, gamma rays, and synchrotron radiation are used as the high-energy radiation, the exposure dose is preferably 1 to 200 mJ / cm, either directly or using a mask for forming a desired pattern. 2 approximately, more preferably 10 to 100 mJ / cm 2 When EB is used as the high energy beam, the exposure dose is preferably 0.1 to 100 μC / cm 2 approximately, more preferably 0.5 to 50 μC / cm 2 The positive resist material of the present invention is particularly suitable for fine patterning using high-energy rays such as KrF excimer laser light, ArF excimer laser light, EB, EUV, i-rays, X-rays, soft X-rays, γ-rays, and synchrotron radiation, and is particularly suitable for fine patterning using EB or EUV.

[0233] After the exposure, PEB may be performed on a hot plate or in an oven, preferably at 50 to 150° C. for 10 seconds to 30 minutes, more preferably at 60 to 120° C. for 30 seconds to 20 minutes.

[0234] After exposure or PEB, the exposed resist film is developed using a developer, preferably an aqueous alkaline solution of 0.1 to 10 mass %, more preferably 2 to 5 mass %, of tetramethylammonium hydroxide (TMAH), tetraethylammonium hydroxide (TEAH), tetrapropylammonium hydroxide (TPAH), tetrabutylammonium hydroxide (TBAH), or the like, for 3 seconds to 3 minutes, preferably 5 seconds to 2 minutes, by a conventional method such as dipping, puddling, or spraying. The irradiated portions dissolve in the developer, while the unexposed portions do not, forming the desired positive pattern on the substrate.

[0235] Negative patterns can also be obtained by using the positive resist material through organic solvent development.The developer used in this case includes 2-octanone, 2-nonanone, 2-heptanone, 3-heptanone, 4-heptanone, 2-hexanone, 3-hexanone, diisobutyl ketone, methylcyclohexanone, acetophenone, methylacetophenone, propyl acetate, butyl acetate, isobutyl acetate, pentyl acetate, butenyl acetate, isopentyl acetate, propyl formate, butyl formate, isobutyl formate, pentyl formate, isopentyl formate, methyl valerate, methyl pentenoate, methyl crotonate, ethyl crotonate, Examples of the organic solvent include methyl propionate, ethyl propionate, ethyl 3-ethoxypropionate, methyl lactate, ethyl lactate, propyl lactate, butyl lactate, isobutyl lactate, pentyl lactate, isopentyl lactate, methyl 2-hydroxyisobutyrate, ethyl 2-hydroxyisobutyrate, methyl benzoate, ethyl benzoate, phenyl acetate, benzyl acetate, methyl phenylacetate, benzyl formate, phenylethyl formate, methyl 3-phenylpropionate, benzyl propionate, ethyl phenylacetate, 2-phenylethyl acetate, etc. These organic solvents may be used alone or in combination of two or more.

[0236] After the development is completed, the resist film is rinsed. A preferred rinse solution is a solvent that is miscible with the developer but does not dissolve the resist film. Preferred examples of such solvents include alcohols having 3 to 10 carbon atoms, ether compounds having 8 to 12 carbon atoms, alkanes, alkenes, alkynes, and aromatic solvents having 6 to 12 carbon atoms.

[0237] Specific examples of alcohols having 3 to 10 carbon atoms include n-propyl alcohol, isopropyl alcohol, 1-butyl alcohol, 2-butyl alcohol, isobutyl alcohol, tert-butyl alcohol, 1-pentanol, 2-pentanol, 3-pentanol, tert-pentyl alcohol, neopentyl alcohol, 2-methyl-1-butanol, 3-methyl-1-butanol, 3-methyl-3-pentanol, cyclopentanol, 1-hexanol, 2-hexanol, and 3-hexanol. , 2,3-dimethyl-2-butanol, 3,3-dimethyl-1-butanol, 3,3-dimethyl-2-butanol, 2-ethyl-1-butanol, 2-methyl-1-pentanol, 2-methyl-2-pentanol, 2-methyl-3-pentanol, 3-methyl-1-pentanol, 3-methyl-2-pentanol, 3-methyl-3-pentanol, 4-methyl-1-pentanol, 4-methyl-2-pentanol, 4-methyl-3-pentanol, cyclohexanol, 1-octanol, and the like.

[0238] Examples of the ether compound having 8 to 12 carbon atoms include di-n-butyl ether, diisobutyl ether, di-sec-butyl ether, di-n-pentyl ether, diisopentyl ether, di-sec-pentyl ether, di-tert-pentyl ether, and di-n-hexyl ether.

[0239] Examples of alkanes having 6 to 12 carbon atoms include hexane, heptane, octane, nonane, decane, undecane, dodecane, methylcyclopentane, dimethylcyclopentane, cyclohexane, methylcyclohexane, dimethylcyclohexane, cycloheptane, cyclooctane, cyclononane, etc. Examples of alkenes having 6 to 12 carbon atoms include hexene, heptene, octene, cyclohexene, methylcyclohexene, dimethylcyclohexene, cycloheptene, cyclooctene, etc. Examples of alkynes having 6 to 12 carbon atoms include hexyne, heptine, octyne, etc.

[0240] Examples of aromatic solvents include toluene, xylene, ethylbenzene, isopropylbenzene, tert-butylbenzene, and mesitylene.

[0241] Rinsing can reduce the occurrence of resist pattern collapse and defects. Rinsing is not always necessary, and not performing rinsing can reduce the amount of solvent used.

[0242] The developed hole or trench pattern can also be shrunk using thermal flow, RELACS, or DSA. A shrink agent is applied to the hole pattern, and the diffusion of an acid catalyst from the resist film during baking causes crosslinking of the shrink agent on the surface of the resist film, resulting in adhesion of the shrink agent to the sidewalls of the hole pattern. The baking temperature is preferably 70 to 180°C, more preferably 80 to 170°C, and the baking time is preferably 10 to 300 seconds. Excess shrink agent is removed, and the hole pattern is shrunk. [Example]

[0243] The present invention will be specifically explained below by showing synthesis examples, examples and comparative examples, but the present invention is not limited to the following examples.

[0244] [1] Monomer synthesis [Synthesis Example 1-1] Synthesis of Monomer M-1 In a reaction vessel, 8.0 g of 1,4-pentadiyn-3-ol, 8.60 g of triethylamine, and 0.61 g of 4-dimethylaminopyridine were dissolved in 25 mL of acetonitrile, and 11.0 g of methacrylic acid chloride was added dropwise while maintaining the internal temperature at 40-60°C. After the addition, the mixture was stirred at an internal temperature of 60°C for 19 hours, after which the reaction solution was cooled and 20 mL of saturated aqueous sodium bicarbonate was added to terminate the reaction. After extraction with a mixed solvent of 25 mL of toluene, 15 mL of hexane, and 15 mL of ethyl acetate, standard aqueous work-up was performed. The solvent was then distilled off, and the mixture was distilled under reduced pressure to obtain 14.2 g of Monomer M-1 as a colorless, transparent oil. [ka]

[0245] [Synthesis Example 1-2] Synthesis of Monomer M-2 Monomer M-2 was obtained in the same manner as in Synthesis Example 1-1, except that 11.0 g of methacrylic acid chloride was changed to 13.9 g of styrene-4-carboxylic acid chloride. [ka]

[0246] [2] Synthesis of base polymer The monomers M-1, M-2, cM-1, PM-1 to PM-4, AM-1 to AM-11, FM-1, and FM-2 used in the synthesis of the base polymer are as follows: The Mw of the polymer is a polystyrene-equivalent value measured by GPC using THF as the solvent. [ka]

[0247] [ka]

[0248] [ka]

[0249] [ka]

[0250] [Synthesis Example 2-1] Synthesis of Polymer P-1 A 2L flask was charged with 3.0g of monomer M-1, 9.8g of 1-isopropyl-1-cyclopentyl methacrylate, 3.6g of 4-hydroxystyrene, and 40g of THF as a solvent. The reaction vessel was cooled to -70°C under a nitrogen atmosphere, and degassing under reduced pressure and nitrogen blowing were repeated three times. After warming to room temperature, 1.2g of AIBN was added as a polymerization initiator, and the temperature was raised to 60°C and the reaction was carried out for 15 hours. This reaction solution was added to 1L of isopropyl alcohol, and the precipitated white solid was filtered off. The obtained white solid was dried under reduced pressure at 60°C to obtain polymer P-1. The composition of polymer P-1 was as follows: 13 C-NMR and 1 Mw and Mw / Mn were confirmed by H-NMR and GPC, respectively. [ka]

[0251] [Synthesis Example 2-2] Synthesis of Polymer P-2 A 2L flask was charged with 3.0g of Monomer M-1, 7.8g of 1-isopropyl-1-cyclopentyl methacrylate, 3.0g of 4-hydroxystyrene, 11.0g of Monomer PM-2, and 40g of THF as a solvent. The reaction vessel was cooled to -70°C under a nitrogen atmosphere, and degassing under reduced pressure and nitrogen blowing were repeated three times. After warming to room temperature, 1.2g of AIBN was added as a polymerization initiator, and the temperature was raised to 60°C and the reaction was carried out for 15 hours. This reaction solution was added to 1L of isopropyl alcohol, and the precipitated white solid was filtered off. The resulting white solid was dried under reduced pressure at 60°C to obtain Polymer P-2. The composition of Polymer P-2 was as follows: 13 C-NMR and 1 Mw and Mw / Mn were confirmed by H-NMR and GPC, respectively. [ka]

[0252] [Synthesis Example 2-3] Synthesis of Polymer P-3 A 2L flask was charged with 3.0g of Monomer M-1, 8.4g of 1-methyl-1-cyclopentyl methacrylate, 1.8g of 3-hydroxystyrene, 11.9g of Monomer PM-1, and 40g of THF as a solvent. The reaction vessel was cooled to -70°C under a nitrogen atmosphere, and degassing under reduced pressure and nitrogen blowing were repeated three times. After warming to room temperature, 1.2g of AIBN was added as a polymerization initiator, and the temperature was raised to 60°C and the reaction was carried out for 15 hours. This reaction solution was added to 1L of isopropyl alcohol, and the precipitated white solid was filtered off. The obtained white solid was dried under reduced pressure at 60°C to obtain Polymer P-3. The composition of Polymer P-3 was as follows: 13 C-NMR and 1 Mw and Mw / Mn were confirmed by H-NMR and GPC, respectively. [ka]

[0253] [Synthesis Example 2-4] Synthesis of Polymer P-4 A 2L flask was charged with 3.0g of Monomer M-1, 8.4g of 1-methyl-1-cyclopentyl methacrylate, 2.4g of 3-hydroxystyrene, 8.9g of Monomer PM-3, and 40g of THF as a solvent. The reaction vessel was cooled to -70°C under a nitrogen atmosphere, and degassing under reduced pressure and nitrogen blowing were repeated three times. After warming to room temperature, 1.2g of AIBN was added as a polymerization initiator, and the temperature was raised to 60°C and the reaction was carried out for 15 hours. This reaction solution was added to 1L of isopropyl alcohol, and the precipitated white solid was filtered off. The obtained white solid was dried under reduced pressure at 60°C to obtain Polymer P-4. The composition of Polymer P-4 was as follows: 13 C-NMR and 1 Mw and Mw / Mn were confirmed by H-NMR and GPC, respectively. [ka]

[0254] [Synthesis Example 2-5] Synthesis of Polymer P-5 A 2L flask was charged with 3.7g of Monomer M-1, 8.9g of Monomer AM-1, 3.6g of 3-hydroxystyrene, 11.0g of Monomer PM-2, and 40g of THF as a solvent. The reaction vessel was cooled to -70°C under a nitrogen atmosphere, and degassing under reduced pressure and nitrogen blowing were repeated three times. After warming to room temperature, 1.2g of AIBN was added as a polymerization initiator, and the temperature was raised to 60°C and the reaction was carried out for 15 hours. This reaction solution was added to 1L of isopropyl alcohol, and the precipitated white solid was filtered off. The obtained white solid was dried under reduced pressure at 60°C to obtain Polymer P-5. The composition of Polymer P-5 was as follows: 13 C-NMR and 1 Mw and Mw / Mn were confirmed by H-NMR and GPC, respectively. [ka]

[0255] [Synthesis Example 2-6] Synthesis of Polymer P-6 A 2L flask was charged with 3.0g of Monomer M-1, 4.6g of Monomer AM-2, 4.0g of Monomer AM-3, 3.0g of 3-hydroxystyrene, 11.0g of Monomer PM-2, and 40g of THF as a solvent. The reaction vessel was cooled to -70°C under a nitrogen atmosphere, and degassing under reduced pressure and nitrogen blowing were repeated three times. After warming to room temperature, 1.2g of AIBN was added as a polymerization initiator, and the temperature was raised to 60°C and the reaction was carried out for 15 hours. This reaction solution was added to 1L of isopropyl alcohol, and the precipitated white solid was filtered off. The obtained white solid was dried under reduced pressure at 60°C to obtain Polymer P-6. The composition of Polymer P-6 was as follows: 13 C-NMR and 1 Mw and Mw / Mn were confirmed by H-NMR and GPC, respectively. [ka]

[0256] [Synthesis Example 2-7] Synthesis of Polymer P-7 A 2L flask was charged with 4.4g of Monomer M-1, 6.6g of Monomer AM-4, 3.0g of 3-hydroxystyrene, 11.0g of Monomer PM-2, and 40g of THF as a solvent. The reaction vessel was cooled to -70°C under a nitrogen atmosphere, and degassing under reduced pressure and nitrogen blowing were repeated three times. After warming to room temperature, 1.2g of AIBN was added as a polymerization initiator, and the temperature was raised to 60°C and the reaction was carried out for 15 hours. This reaction solution was added to 1L of isopropyl alcohol, and the precipitated white solid was filtered off. The obtained white solid was dried under reduced pressure at 60°C to obtain Polymer P-7. The composition of Polymer P-7 was as follows: 13 C-NMR and 1 Mw and Mw / Mn were confirmed by H-NMR and GPC, respectively. [ka]

[0257] [Synthesis Example 2-8] Synthesis of Polymer P-8 A 2L flask was charged with 3.0g of Monomer M-1, 7.2g of Monomer AM-5, 3.0g of 3-hydroxystyrene, 11.0g of Monomer PM-2, and 40g of THF as a solvent. The reaction vessel was cooled to -70°C under a nitrogen atmosphere, and degassing under reduced pressure and nitrogen blowing were repeated three times. After warming to room temperature, 1.2g of AIBN was added as a polymerization initiator, and the temperature was raised to 60°C and the reaction was carried out for 15 hours. This reaction solution was added to 1L of isopropyl alcohol, and the precipitated white solid was filtered off. The obtained white solid was dried under reduced pressure at 60°C to obtain Polymer P-8. The composition of Polymer P-8 was as follows: 13 C-NMR and 1 Mw and Mw / Mn were confirmed by H-NMR and GPC, respectively. [ka]

[0258] [Synthesis Example 2-9] Synthesis of Polymer P-9 A 2L flask was charged with 3.0g of Monomer M-1, 7.1g of Monomer AM-6, 3.0g of 3-hydroxystyrene, 11.0g of Monomer PM-2, and 40g of THF as a solvent. The reaction vessel was cooled to -70°C under a nitrogen atmosphere, and degassing under reduced pressure and nitrogen blowing were repeated three times. After heating to room temperature, 1.2g of AIBN was added as a polymerization initiator, and the temperature was raised to 60°C and the reaction was carried out for 15 hours. This reaction solution was added to 1L of isopropyl alcohol, and the precipitated white solid was filtered off. The obtained white solid was dried under reduced pressure at 60°C to obtain Polymer P-9. The composition of Polymer P-9 was as follows: 13 C-NMR and 1 Mw and Mw / Mn were confirmed by H-NMR and GPC, respectively. [ka]

[0259] [Synthesis Example 2-10] Synthesis of Polymer P-10 A 2L flask was charged with 2.1g of Monomer M-2, 7.2g of Monomer AM-7, 4.2g of 3-hydroxystyrene, 11.0g of Monomer PM-2, and 40g of THF as a solvent. The reaction vessel was cooled to -70°C under a nitrogen atmosphere, and degassing under reduced pressure and nitrogen blowing were repeated three times. After warming to room temperature, 1.2g of AIBN was added as a polymerization initiator, and the temperature was raised to 60°C and the reaction was carried out for 15 hours. This reaction solution was added to 1L of isopropyl alcohol, and the precipitated white solid was filtered off. The obtained white solid was dried under reduced pressure at 60°C to obtain Polymer P-10. The composition of Polymer P-10 was as follows: 13 C-NMR and 1 Mw and Mw / Mn were confirmed by H-NMR and GPC, respectively. [ka]

[0260] [Synthesis Example 2-11] Synthesis of Polymer P-11 A 2L flask was charged with 3.0g of Monomer M-1, 7.1g of Monomer AM-6, 8.0g of Monomer FM-1, 11.0g of Monomer PM-2, and 40g of THF as a solvent. The reaction vessel was cooled to -70°C under a nitrogen atmosphere, and degassing under reduced pressure and nitrogen blowing were repeated three times. After warming to room temperature, 1.2g of AIBN was added as a polymerization initiator, and the temperature was raised to 60°C and the reaction was carried out for 15 hours. This reaction solution was added to 1L of isopropyl alcohol, and the precipitated white solid was filtered off. The obtained white solid was dried under reduced pressure at 60°C to obtain Polymer P-11. The composition of Polymer P-11 was as follows: 13 C-NMR and 1 Mw and Mw / Mn were confirmed by H-NMR and GPC, respectively. [ka]

[0261] [Synthesis Example 2-12] Synthesis of Polymer P-12 A 2L flask was charged with 3.0g of Monomer M-1, 7.1g of Monomer AM-6, 6.8g of Monomer FM-2, 8.0g of Monomer PM-2, and 40g of THF as a solvent. The reaction vessel was cooled to -70°C under a nitrogen atmosphere, and degassing under reduced pressure and nitrogen blowing were repeated three times. After warming to room temperature, 1.2g of AIBN was added as a polymerization initiator, and the temperature was raised to 60°C and the reaction was carried out for 15 hours. This reaction solution was added to 1L of isopropyl alcohol, and the precipitated white solid was filtered off. The obtained white solid was dried under reduced pressure at 60°C to obtain Polymer P-12. The composition of Polymer P-12 was as follows: 13 C-NMR and 1 Mw and Mw / Mn were confirmed by H-NMR and GPC, respectively. [ka]

[0262] [Synthesis Example 2-13] Synthesis of Polymer P-13 A 2L flask was charged with 3.0g of Monomer M-1, 8.9g of Monomer AM-1, 3.0g of 3-hydroxystyrene, 10.5g of Monomer PM-4, and 40g of THF as a solvent. The reaction vessel was cooled to -70°C under a nitrogen atmosphere, and degassing under reduced pressure and nitrogen blowing were repeated three times. After warming to room temperature, 1.2g of AIBN was added as a polymerization initiator, and the temperature was raised to 60°C and the reaction was carried out for 15 hours. This reaction solution was added to 1L of isopropyl alcohol, and the precipitated white solid was filtered off. The obtained white solid was dried under reduced pressure at 60°C to obtain Polymer P-13. The composition of Polymer P-13 was as follows: 13 C-NMR and 1 Mw and Mw / Mn were confirmed by H-NMR and GPC, respectively. [ka]

[0263] [Synthesis Example 2-14] Synthesis of Polymer P-14 A 2L flask was charged with 3.0g of Monomer M-1, 6.7g of Monomer AM-8, 3.8g of Monomer AM-9, 3.0g of 3-hydroxystyrene, 11.0g of Monomer PM-2, and 40g of THF as a solvent. The reaction vessel was cooled to -70°C under a nitrogen atmosphere, and degassing under reduced pressure and nitrogen blowing were repeated three times. After warming to room temperature, 1.2g of AIBN was added as a polymerization initiator, and the temperature was raised to 60°C and the reaction was carried out for 15 hours. This reaction solution was added to 1L of isopropyl alcohol, and the precipitated white solid was filtered off. The resulting white solid was dried under reduced pressure at 60°C to obtain Polymer P-14. The composition of Polymer P-14 was as follows: 13 C-NMR and 1 Mw and Mw / Mn were confirmed by H-NMR and GPC, respectively. [ka]

[0264] [Synthesis Example 2-15] Synthesis of Polymer P-15 A 2L flask was charged with 3.0g of Monomer M-1, 5.6g of Monomer AM-10, 2.9g of Monomer AM-11, 3.0g of 3-hydroxystyrene, 11.0g of Monomer PM-2, and 40g of THF as a solvent. The reaction vessel was cooled to -70°C under a nitrogen atmosphere, and degassing under reduced pressure and nitrogen blowing were repeated three times. After warming to room temperature, 1.2g of AIBN was added as a polymerization initiator, and the temperature was raised to 60°C and the reaction was carried out for 15 hours. This reaction solution was added to 1L of isopropyl alcohol, and the precipitated white solid was filtered off. The obtained white solid was dried under reduced pressure at 60°C to obtain Polymer P-15. The composition of Polymer P-15 was as follows: 13 C-NMR and 1 Mw and Mw / Mn were confirmed by H-NMR and GPC, respectively. [ka]

[0265] [Comparative Synthesis Example 1] Synthesis of comparative polymer cP-1 Comparative polymer cP-1 was obtained in the same manner as in Synthesis Example 2-1, except that monomer M-1 was not used. The composition of comparative polymer cP-1 was: 13 C-NMR and 1 Mw and Mw / Mn were confirmed by H-NMR and GPC, respectively. [ka]

[0266] [Comparative Synthesis Example 2] Synthesis of Comparative Polymer cP-2 Comparative polymer cP-2 was obtained in the same manner as in Synthesis Example 2-1, except that monomer cM-1 was used instead of monomer M-1. The composition of comparative polymer cP-2 was: 13 C-NMR and 1 Mw and Mw / Mn were confirmed by H-NMR and GPC, respectively. [ka]

[0267] [Comparative Synthesis Example 3] Synthesis of Comparative Polymer cP-3 Comparative polymer cP-3 was obtained in the same manner as in Synthesis Example 2-2, except that monomer M-1 was not used. The composition of comparative polymer cP-3 was: 13 C-NMR and 1 Mw and Mw / Mn were confirmed by H-NMR and GPC, respectively. [ka]

[0268] [3] Preparation and evaluation of positive resist materials [Examples 1 to 16, Comparative Examples 1 to 3] (1) Preparation of positive resist material A positive resist material was prepared by dissolving the components shown in Table 1 in a solvent containing 50 ppm of Omnova surfactant PolyFox PF-636. The solution was then filtered through a 0.02 μm high-density polyethylene filter.

[0269] In Table 1, the components are as follows: Organic solvent: PGMEA (propylene glycol monomethyl ether acetate) DAA (diacetone alcohol) EL (L-ethyl lactate)

[0270] Acid generator: PAG-1, PAG-2 [ka]

[0271] Quencher: Q-1, Q-2 [ka]

[0272] (2) EUV lithography evaluation Each positive resist material shown in Table 1 was spin-coated onto a Si substrate with a 20 nm thick silicon-containing spin-on hard mask SHB-A940 (43% silicon by mass) manufactured by Shin-Etsu Chemical Co., Ltd., and pre-baked at 105°C for 60 seconds using a hot plate to produce a 60 nm thick resist film. The resist film was exposed to light using an ASML EUV scanner NXE3400 (NA 0.33, σ 0.9 / 0.6, quadruple pole illumination, wafer dimensions 46 nm pitch, +20% bias hole pattern mask), subjected to PEB on a hot plate at the temperature shown in Table 1 for 60 seconds, and developed for 30 seconds with a 2.38% by mass TMAH aqueous solution to obtain a hole pattern with a dimension of 23 nm. The exposure dose when each hole dimension was 23 nm was measured and used as the sensitivity. The dimensions of 50 holes were measured using a Hitachi High-Technologies Corporation CD-SEM (CG6300), and the CDU was calculated as three times the standard deviation (σ) (3σ). The results are shown in Table 1.

[0273] [Table 1]

[0274] As can be seen from the results shown in Table 1, the positive resist material of the present invention, which uses a base polymer containing a repeating unit having two triple bonds and a repeating unit whose solubility in an alkaline developer is improved by the action of an acid, had good CDU.

Claims

1. A positive resist material comprising a base polymer containing a repeating unit a having two triple bonds represented by the following formula (a) and a repeating unit b whose solubility in an alkaline developer is improved by the action of an acid: 【Chemical 1】 (wherein R A is a hydrogen atom or a methyl group. X 1 is an ester bond or a phenylene group. X 2 is a single bond, a phenylene group or an aliphatic hydrocarbylene group having 1 to 10 carbon atoms, and some of the —CH 2 — groups constituting the aliphatic hydrocarbylene group may be substituted with ether bonds, ester bonds or sulfonate ester bonds. X 3 is a single bond, an ether bond, an ester bond, a carbonate bond or a urethane bond. R 1 and R 2 are hydrogen atoms.

2. 2. The positive resist material according to claim 1, wherein the repeating unit b is a repeating unit b1 in which the hydrogen atom of the carboxy group is substituted with an acid labile group, or a repeating unit b2 in which the hydrogen atom of the phenolic hydroxy group is substituted with an acid labile group.

3. 3. The positive resist material according to claim 2, wherein the repeating unit b1 is represented by the following formula (b1), and the repeating unit b2 is represented by the following formula (b2). 【Chemistry 2】 (In the formula, R A are each independently a hydrogen atom or a methyl group. Y 1 is a single bond, a phenylene group, a naphthylene group, or a linking group having 1 to 12 carbon atoms and containing an ester bond, an ether bond, or a lactone ring. Y 2 is a single bond, an ester bond or an amide bond. Y 3 is a single bond, an ether bond or an ester bond. R 11 and R 12 are each independently an acid labile group. R 13 is a fluorine atom, a trifluoromethyl group, a cyano group or a saturated hydrocarbyl group having 1 to 6 carbon atoms. R 14 is a single bond or an alkanediyl group having 1 to 6 carbon atoms, and the alkanediyl group may contain an ether bond or an ester bond. a is 1 or 2, and b is an integer from 0 to 4, provided that 1≦a+b≦5.

4. 2. The positive resist material according to claim 1, wherein the base polymer further comprises a repeating unit c containing an adhesive group selected from the group consisting of a hydroxy group, a carboxy group, a lactone ring, a carbonate bond, a thiocarbonate bond, a carbonyl group, a cyclic acetal group, an ether bond, an ester bond, a sulfonate ester bond, a cyano group, an amide bond, —O—C(═O)—S—, and —O—C(═O)—NH—.

5. 2. The positive resist material according to claim 1, wherein the base polymer further comprises a repeating unit represented by any one of the following formulas (d1) to (d3): 【Chemistry 3】 (In the formula, R A are each independently a hydrogen atom or a methyl group. Z 1 represents a single bond, an aliphatic hydrocarbylene group having 1 to 6 carbon atoms, a phenylene group, a naphthylene group, or a group having 7 to 18 carbon atoms obtained by combining these, or -O-Z 11 -, -C(=O)-O-Z 11 - or -C(=O)-NH-Z 11 - is. Z 11 represents an aliphatic hydrocarbylene group having 1 to 6 carbon atoms, a phenylene group, a naphthylene group, or a group having 7 to 18 carbon atoms obtained by combining these, and may contain a carbonyl group, an ester bond, an ether bond, or a hydroxy group. Z 2 is a single bond or an ester bond. Z 3 is a single bond, -Z 31 -C(=O)-O-, -Z 31 -O- or -Z 31 -O-C(=O)-. Z 31 represents an aliphatic hydrocarbylene group having 1 to 12 carbon atoms, a phenylene group, or a group having 7 to 18 carbon atoms obtained by combining these, and may contain a carbonyl group, an ester bond, an ether bond, a bromine atom, or an iodine atom. Z 4 is a methylene group, a 2,2,2-trifluoro-1,1-ethanediyl group, or a carbonyl group. Z 5 represents a single bond, a methylene group, an ethylene group, a phenylene group, a fluorinated phenylene group, a phenylene group substituted with a trifluoromethyl group, -O-Z 51 -, -C(=O)-O-Z 51 - or -C(=O)-NH-Z 51 - is. Z 51 represents an aliphatic hydrocarbylene group having 1 to 6 carbon atoms, a phenylene group, a fluorinated phenylene group, or a phenylene group substituted with a trifluoromethyl group, and may contain a carbonyl group, an ester bond, an ether bond, a halogen atom, or a hydroxy group. R 21 ~R 28 are each independently a halogen atom or a hydrocarbyl group having 1 to 20 carbon atoms which may contain a heteroatom. 23 and R 24 or R 26 and R 27 may be bonded to each other to form a ring together with the sulfur atom to which they are attached. M - is a non-nucleophilic counterion.)

6. 2. The positive resist material according to claim 1, further comprising an acid generator.

7. 2. The positive resist material according to claim 1, further comprising an organic solvent.

8. 2. The positive resist material according to claim 1, further comprising a quencher.

9. 2. The positive resist material according to claim 1, further comprising a surfactant.

10. A pattern forming method comprising the steps of: forming a resist film on a substrate using the positive resist material according to any one of claims 1 to 9; exposing the resist film to high-energy rays; and developing the exposed resist film using a developer.

11. 11. The pattern forming method according to claim 10, wherein the high-energy beam is i-ray, KrF excimer laser light, ArF excimer laser light, electron beam, or extreme ultraviolet light having a wavelength of 3 to 15 nm.

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