Adsorption material

Abstract

To provide an adsorption member that has excellent adsorption properties to an adsorbed object, does not easily damage the back side of the adsorbed object, and has high cleaning efficiency.SOLUTION: An adsorption member according to the present disclosure includes a first film having an adsorption surface for adsorbing an object to be adsorbed, and a porous substrate supporting the first film. The average value of the arithmetic mean inclination angle (RΔa) in the roughness curve of the suction surface is 15° or more and 45° or less.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to a suction member, and a processing device and an inspection device that use this suction member. [Background technology]

[0002] Conventionally, suction members have been used to suction and hold an object to be sucked, such as a semiconductor wafer, in the manufacturing process of a memory, an IC (integrated circuit), etc. An example of such a suction member is a vacuum suction member using a porous material, as described in Patent Document 1. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2019-12757 DISCLOSURE OF THE INVENTION [Problem to be solved by the invention]

[0004] In vacuum suction members using porous materials, particles that make up the porous material may fall off and become trapped between the suction surface of the vacuum suction member and the back surface of the object to be suctioned. If such floating particles become trapped between the suction surface of the vacuum suction member and the back surface of the object to be suctioned, the back surface of the object to be suctioned may be damaged.

[0005] An object of the present disclosure is to provide an adsorption member that has excellent adsorption properties for an object to be adsorbed, is less likely to damage the back surface of the object to be adsorbed, and has high cleaning efficiency. [Means for solving the problem]

[0006] (1) An adsorption member according to the present disclosure includes a first membrane having an adsorption surface for adsorbing an adsorbate, and a porous substrate supporting the first membrane. The adsorption surface has a roughness curve having an average arithmetic mean slope angle (RΔa) of 15° or more and 45° or less.

[0007] (2) The adsorption member described in (1) above further comprises a second membrane having an annular surface surrounding the adsorption surface, and a support portion having a bottomed annular body that supports the second membrane and accommodates the porous substrate. (3) In the adsorption member described in (2) above, the adsorption surface and the annular surface are semiconductive. (4) In the adsorption member described in (2) or (3) above, the second film has higher fracture toughness than the bottomed ring body, and the thickness of the outer peripheral portion of the second film located on the extension of the outer peripheral surface of the bottomed ring body is greater than the thickness of the first film. (5) In the adsorption member described in any one of (1) to (4) above, the adsorption surface is black, and there is a positive correlation between wavelengths at 10 nm intervals in the wavelength range of 360 nm to 740 nm and the reflectance R(λ) of the adsorption surface (where λ is the wavelength (nm) within the wavelength range), and the slope of the regression equation obtained by logarithmic approximation is 2 or less. (6) In the adsorption member described in any one of (2) to (5) above, the annular surface is black, and there is a positive correlation between wavelengths at 10 nm intervals in the wavelength range of 360 nm to 740 nm and the reflectance R(λ) of at least one of the annular surface and the adsorption surface (where λ is a wavelength (nm) within the wavelength range), and the slope of the regression equation obtained by logarithmic approximation is 2 or less. (7) In the adsorption member according to any one of (1) to (6) above, the adsorption surface is black, and the color difference within the adsorption surface is 3 or less (excluding 0). (8) In the suction member according to any one of (2) to (7) above, the annular surface is black, and the color difference within the annular surface is 3 or less (excluding 0).

[0008] (9) A processing device according to the present disclosure includes the suction member according to any one of (1) to (8) above. Furthermore, (10) An inspection device according to the present disclosure includes the suction member according to any one of (1) to (8) above. [Effects of the Invention]

[0009] As described above, the adsorption member according to the present disclosure has an average value of the arithmetic mean slope angle (RΔa) in the roughness curve of the adsorption surface of 15° to 45°. Therefore, the adsorption member according to the present disclosure has excellent adsorption properties for the adsorbed object, is less likely to damage the back surface of the adsorbed object, and has high cleaning efficiency.

[0010] Furthermore, the processing device and inspection device according to the present disclosure include the suction member according to the present disclosure, and therefore have excellent suction properties for the object to be attracted, are less likely to damage the back surface of the object to be attracted, and have high cleaning efficiency. [Brief explanation of the drawings]

[0011] [Figure 1] FIG. 1 is a perspective view showing an adsorption member according to an embodiment of the present disclosure. [Figure 2] FIG. 2 is an explanatory diagram showing a cross section taken along line XX shown in FIG. [Figure 3] FIG. 10 is an explanatory view showing a cross section of an adsorption member according to another embodiment of the present disclosure. [Figure 4] 4A to 4C are explanatory diagrams for explaining various embodiments of the region Y shown in FIG. 3. [Figure 5] 2 is a schematic diagram showing an inspection device according to an embodiment of the present disclosure, which is equipped with the suction member shown in FIG. 1. FIG. DETAILED DESCRIPTION OF THE INVENTION

[0012] An adsorption member according to one embodiment of the present disclosure will be described with reference to Figures 1 and 2. As shown in Figures 1 and 2, an adsorption member 1 according to one embodiment includes a first membrane 2, a porous substrate 3, and a support 4. Figure 1 is a perspective view showing the adsorption member 1 according to one embodiment, and Figure 2 is an explanatory diagram showing a cross section taken along line XX shown in Figure 1.

[0013] The first film 2 has an adsorption surface 2a for adsorbing an adsorbate. The material forming the first film 2 is not limited, and examples thereof include diamond-like carbon (DLC), silicon carbide, titanium, titanium nitride, titanium carbide, titanium carbonitride, titanium oxide or aluminum titanate, each of which has a stoichiometric composition with oxygen missing. The first film 2 has a thickness of, for example, 0.5 μm to 3 μm and has through-holes that penetrate from the surface facing the porous substrate 3 (described below) to the adsorption surface 2a. Due to the presence of such through-holes in the first film 2, when the adsorbate is sucked from the porous substrate 3 side, it is adsorbed onto the adsorption surface 2a. The average diameter of the through-holes in the first film 2 is, for example, 30 μm to 70 μm. The first film 2 may be a porous film or a dense film, as long as it has the above-described through-holes.

[0014] In an adsorption member 1 according to one embodiment, the average value of the arithmetic mean slope angle (RΔa) in the roughness curve of the adsorption surface 2a of the first film 2 is 15° or more and 45° or less. When the average value of the arithmetic mean slope angle (RΔa) is 15° or more, the contact area of ​​the adsorption surface 2a with the back surface of the adsorbent is reduced. This reduces the likelihood of floating particles being trapped between the adsorption surface 2a and the back surface. As a result, the back surface of the adsorbent is less likely to be damaged. On the other hand, when the average value of the arithmetic mean slope angle (RΔa) is 45° or less, the airflow resistance is less likely to increase even when backwashing is performed from the back surface side of the bottomed annular body 41 of the support part 4 (described later). As a result, the first film 2 and the porous substrate 3 are less likely to come off the support part 4, allowing for efficient cleaning.

[0015] The arithmetic mean slope angle (RΔa) can be measured in accordance with JIS B 0601:2001 using a shape analysis laser microscope (Keyence Corporation, Ultra-Deep Color 3D Shape Measuring Microscope (VK-X1100 or its successor)). Specifically, the illumination method is set to coaxial incident light, the magnification is set to 240x, the cutoff value λs is set to none, the cutoff value λc is set to 0.08 mm, the cutoff value λf is set to none, end effect correction is set, and the measurement range per point from the absorption surface to be measured is set to 1420 μm × 1070 μm. Four lines to be measured are drawn approximately equally spaced along the longitudinal direction of each measurement range, and line roughness measurements are performed. The length of each line to be measured is set to 1282 μm. Six measurement ranges are set approximately equally spaced along the circumferential direction, for a total of 24 lines to be measured. The mean value of the arithmetic mean tilt angle (RΔa) is the average value of the measurements obtained from these 24 lines.

[0016] The adsorption surface 2a of the first film 2 may be semiconductive. In this specification, "semiconductive" means a surface resistance value of 10 4 Ω or more 10 11 This means that the surface resistance is Ω or less. If the attraction surface 2a of the first film 2 is semiconductive, it is possible to further mitigate the occurrence of sudden discharge due to peeling electrification that is likely to occur when an object to be attracted is removed from the attraction surface 2a. The surface resistance value can be determined using a two-needle electrical resistance meter (PROSTAT, PRS-802) with a terminal distance of 10 mm and an applied voltage of 100 V.

[0017] The adsorption surface 2a of the first film 2 may be black. When the adsorption surface 2a of the first film 2 is black, there may be a positive correlation between wavelengths at 10 nm intervals in the wavelength range of 360 nm to 740 nm and the reflectance R(λ) of the adsorption surface 2a (where λ is the wavelength (nm) within the wavelength range), and the slope of the regression equation obtained by logarithmic approximation may be 2 or less. If the slope of the regression equation is 2 or less, the slope of the regression equation is small, and the reflectance tends to converge even in the long wavelength range. Therefore, the difference between the reflectance in the short wavelength range and the reflectance in the long wavelength range becomes small. As a result, color unevenness is less likely to occur, making it easier to detect and identify the adsorbate. In particular, visual detection and identification becomes easier.

[0018] When the adsorption surface 2a of the first film 2 is black, the color difference within the adsorption surface 2a may be 3 or less (excluding 0). If the color difference within the adsorption surface 2a is 3 or less, color unevenness will be reduced. Reducing color unevenness will also improve the commercial value of the adsorption member 1.

[0019] The reflectance R(λ) and color difference of the attraction surface 2a can be determined, for example, using a spectrophotometer (Konica Minolta, Inc., CM-2600d or its successor model) under measurement conditions of a CIE standard illuminant D65 and a viewing angle of 2°. To determine the color difference, first, measurement points are set at approximately equal intervals, for example, five points, along the circumferential direction of the attraction surface 2a. Of these five measurement points, any one is designated as a reference measurement point and the others as comparison measurement points, and the color difference (ΔE*ab) can be determined using the following formula (A):

[0020] ΔE*ab=((ΔL*) 2 +(Δa*) 2 +(Δb*) 2 )) 1 / 2 (A) ΔL*: Difference in brightness index L* between the reference measurement point and the comparison measurement point Δa*: Difference in chromaticity index a* between the reference measurement point and the comparison measurement point Δb*: Difference in chromaticity index b* between the reference measurement point and the comparison measurement point

[0021] The porous substrate 3 is a member for supporting the first membrane 2. There are no limitations on the method for supporting the first membrane 2 on the porous substrate 3. The size of the porous substrate 3 is not particularly limited as long as it is large enough to support the first membrane 2. The porous substrate 3 has a thickness of, for example, 5 mm or more and 20 mm or less. The porous substrate 3 has a diameter of, for example, 70 mm or more and 203 mm or less.

[0022] The porous substrate 3 is formed of, for example, ceramics. Examples of ceramic raw materials include ceramic raw materials containing, as a main component, an oxide such as aluminum oxide or silicon oxide. In this specification, the porous substrate 3 refers to a substrate having a porosity of 20% by volume or more as determined by mercury intrusion porosimetry. Mercury intrusion porosimetry is a method in which mercury is injected (mercury intrusion porosimetry) into the pores of the porous substrate 3 (sample) using a mercury intrusion porosimeter to determine the porosity, and the determination may be made in accordance with JIS R 1655-2003.

[0023] The porous substrate 3 contains pores that communicate in the thickness direction, and the porosity of the pores contained in the porous substrate 3 is not limited as long as it is 20% by volume or more. The porosity of the pores contained in the porous substrate 3 may be, for example, 28% by volume or more and 38% by volume or less. If the porosity is in this range, the airflow resistance can be reduced without reducing the mechanical strength. The average diameter of the pores present in the porous substrate 3 is, for example, 30 μm or more and 70 μm or less.

[0024] The pores contained in the porous substrate 3 communicate with at least some of the through-holes contained in the first film 2. Because the pores and the through-holes communicate with each other, when suction is applied from the porous substrate 3 side, the adsorbate is adsorbed onto the adsorption surface 2a of the first film 2.

[0025] As shown in FIG. 1, in an adsorption member 1 according to one embodiment, a porous substrate 3 supporting a first membrane 2 is housed in a support 4. The support 4 has a bottomed annular body 41 for housing the porous substrate 3, and a mounting hole 4a is formed at the outer edge of the bottom for mounting to various devices such as processing equipment and inspection equipment. The support 4 is made of dense ceramics. Dense ceramics refer to ceramics with a relative density of, for example, 94% or more.

[0026] This relative density is the percentage of the apparent density of the ceramics calculated in accordance with JIS R 1634: 1998 relative to the theoretical density of the ceramics. The theoretical density of the ceramics can be determined by determining the content of each component constituting the ceramics using ICP (Inductively Coupled Plasma) emission spectroscopy or X-ray fluorescence analysis, and identifying each component using X-ray diffraction using CuKα radiation.

[0027] As shown in FIG. 2, in addition to the mounting holes 4a, suction channels 4b are formed in the bottom of the support 4, extending in the thickness direction of the bottom, and grooves 4c are located between the suction channels 4b and the porous substrate 3. The suction channels 4b and grooves 4c formed in the support 4 communicate with the pores contained in the porous substrate 3. Therefore, even when the porous substrate 3 is housed in the support 4, the object to be adsorbed can be adsorbed onto the adsorption surface 2a of the first membrane 2 by applying suction from the bottom of the support 4. It is sufficient that at least one suction channel 4b and one groove 4c are formed. For example, multiple suction channels 4b and grooves 4c may be formed concentrically, linearly, such as in a row or grid, or randomly.

[0028] As shown in Fig. 3, a second membrane 5 may be supported on an upper surface 41a of a bottomed annular body 41 of a support portion 4. Fig. 3 is an explanatory diagram showing a cross section of an adsorption member 1' according to another embodiment of the present disclosure. The same members as those shown in Figs. 1 and 2 are designated by the same reference numerals, and detailed description thereof will be omitted.

[0029] In the adsorption member 1', the second film 5 has an annular surface 5a that surrounds the adsorption surface 2a of the first film 2. The annular surface 5a of the second film 5 and the adsorption surface 2a of the first film 2 are positioned so as to be substantially flush with each other. Because the second film 5 is supported on the upper surface 41a of the bottomed annular body 41 of the support part 4, heat generated when the adsorption target is processed can be quickly dissipated from the first film 2 to the second film 5.

[0030] The annular surface 5a of the second film 5 may be semiconductive, similar to the attracting surface 2a of the first film 2. Semiconductivity has been described above, and a detailed description thereof will be omitted. If the annular surface 5a of the second film 5 is semiconductive, it is possible to further mitigate the occurrence of sudden discharge due to peeling electrification, which is likely to occur when an attracting object is removed from the attracting surface 2a.

[0031] The material forming the second film 5 is not limited, and, like the first film 2, examples include diamond-like carbon (DLC), silicon carbide, titanium, titanium nitride, titanium carbide, titanium carbonitride, titanium oxide or aluminum titanate in which oxygen is deficient from the stoichiometric composition. The second film 5 may be formed integrally with the first film 2, or may be formed separately from the first film 2. For example, when the first film 2 and the second film 5 are formed integrally, the adsorption surface 2a of the first film 2 and the annular surface 5a of the second film 5 tend to be substantially flush with each other.

[0032] When the first film 2 or the second film 5 is mainly composed of diamond-like carbon (DLC), it can be identified by a Raman spectroscopic analyzer. Specifically, when measured by a Raman spectroscopic analyzer, the peak position of graphite, 1555 cm -1 and the diamond peak position of 1333 cm -1 When diamond-like carbon (DLC) is the main component, the Raman spectrum has a peak at a wave number of 1500 to 1640 cm -1 The G band is in the range of 1300-1400 cm -1 In the Raman spectrum, the D band is observed in the range of 1500 to 1640 cm. -1The strongest peak intensity among the peaks present in H G , wave number 1300~1400cm -1 The highest peak intensity among the peaks present in the range is H D When H G >H D It is preferable that the above relationship is satisfied. When this relationship is satisfied, it is possible to maintain the density of the second film 5. The first film 2 and the second film 5 may contain, in addition to diamond-like carbon (DLC), for example, Fe at 0.05 ppm by mass or less and Ni at 0.01 ppm by mass or less.

[0033] When the first film 2 or the second film 5 is primarily composed of an inorganic substance such as silicon carbide, it can be identified using an X-ray diffractometer using CuKα radiation. The content of each component can be determined, for example, using an ICP (Inductively Coupled Plasma) emission spectrometer or an X-ray fluorescence analyzer. The "major component" in the first film 2 or the second film 5 refers to a component that accounts for 90% by mass or more of the total 100% by mass of the components that make up each film.

[0034] The second film 5 may have a higher fracture toughness than the bottomed ring body 41 of the support part 4. If the fracture toughness of the second film 5 is higher than that of the bottomed ring body 41, the upper surface 41a of the bottomed ring body 41 is covered with the second film 5 having high fracture toughness. As a result, particles are less likely to detach from the end of the upper surface 41a of the bottomed ring body 41, and the number of floating particles can be reduced.

[0035] The difference between the fracture toughness of the second film 5 and the fracture toughness of the bottomed annular body 41 is, for example, 1 MPa m 1 / 2 For example, the fracture toughness of the second film 5 is preferably 4.5 MPa m 1 / 2 More than 11MPa m 1 / 2 The fracture toughness of the bottomed annular body 41 is 3 MPa·m 1 / 2 More than 4MPa m 1 / 2 Because the second film 5 is thin, the fracture toughness of both the second film 5 and the bottomed annular body 4 may be determined using the nanoindentation method in accordance with ISO 14577-1.

[0036] As shown in Fig. 4, the second film 5 may have a uniform thickness, or the thickness of the outer peripheral portion 5b of the second film 5 located on the extension of the outer peripheral surface 41b of the bottomed ring-shaped body 41 may be greater than the thickness of the first film 2. Fig. 4 is an explanatory diagram for explaining various embodiments of region Y shown in Fig. 3. When the thickness of the outer peripheral portion 5b of the second film 5 is greater than the thickness of the first film 2, the second film 5 is less likely to peel off from the upper surface 41a of the bottomed ring-shaped body 41. The thickness of the outer peripheral portion 5b of the second film 5 is, for example, 1.1 to 1.5 times the thickness of the first film 2.

[0037] The annular surface 5a of the second film 5 may be black. When the adsorption surface 2a of the first film 2 is black, there may be a positive correlation between wavelengths at 10 nm intervals in the wavelength range of 360 nm to 740 nm and the reflectance R(λ) of at least one of the annular surface 5a and the adsorption surface 2a (where λ is a wavelength (nm) within the wavelength range), and the slope of a regression equation obtained by logarithmic approximation may be 2 or less.

[0038] If the slope of the regression equation is 2 or less, the slope of the regression equation is small, and the reflectance tends to converge even in the wide wavelength range. Therefore, the difference between the reflectance in the narrow wavelength range and the reflectance in the wide wavelength range becomes small. As a result, color unevenness is less likely to occur, making it easier to detect and identify the object to be attracted. In particular, visual detection and identification become easier. The reflectance R(λ) of the annular surface 5a can be determined using the same method as that used to determine the reflectance R(λ) of the attracting surface 2a described above.

[0039] When the annular surface 5a of the second film 5 is black, the color difference within the annular surface 5a may be 3 or less (excluding 0). If the color difference within the annular surface 5a is 3 or less, color unevenness will be reduced. Reducing color unevenness will also improve the commercial value of the adsorption member 1. The color difference of the annular surface 5a can be determined using the same method as that used to determine the color difference of the adsorption surface 2a described above.

[0040] Next, a method for manufacturing an adsorption member according to the present disclosure will be described. The method for manufacturing an adsorption member according to the present disclosure is not limited, and for example, the adsorption member may be manufactured by the following procedure.

[0041] First, a method for manufacturing a porous substrate will be described. When the main component of the ceramic forming the porous substrate is aluminum oxide, a mixed powder is prepared containing 16% by mass to 22% by mass of silicon oxide, 2% by mass to 3.4% by mass of titanium oxide, 1% by mass to 1.6% by mass of magnesium hydroxide, 0.7% by mass to 1.1% by mass of calcium carbonate, and the remainder being aluminum oxide. The prepared mixed powder may contain impurities in a total amount of 3% by mass or less.

[0042] The resulting mixed powder and a solvent are then wet-mixed and pulverized to obtain a slurry, using, for example, a barrel mill, a rotary mill, a vibration mill, a bead mill, or an attritor.

[0043] A spherical resin may be added as a pore-forming material in a ratio of 30 to 70 parts by mass per 100 parts by mass of the resulting mixed powder. Examples of the spherical resin include powdered polyethylene, vinyl acetate, cellulose, polypropylene, polyvinyl alcohol, and acrylic resin. These pore-forming materials are burned off in the firing step described below to form pores. The average particle size of the spherical resin is not limited; for example, if it is 50 to 106 μm, a porous substrate with an average pore size of 40 to 85 μm can be obtained by firing described below.

[0044] The slurry is then spray-dried using a spray dryer to produce granules. The granules are molded using an isostatic press at a pressure of, for example, 80 MPa, and then optionally machined to produce a disk-shaped compact. The resulting compact is fired in air at a temperature of 1500°C to 1600°C, for example, about 1550°C, to produce a porous body (porous substrate) with a porosity of 35% to 40% by volume.

[0045] Next, a support having a bottomed annular body capable of accommodating the obtained porous substrate is prepared. When the main component of the ceramic forming the support having a bottomed annular body is aluminum oxide, aluminum oxide powder (purity of 99.9% by mass or more), magnesium hydroxide, silicon oxide, and calcium carbonate powders are charged into a grinding mill together with a solvent (ion-exchanged water) and a dispersant to obtain an average particle size (D 50 After pulverizing the powder until the particle size is 1.5 μm or less, an organic binder, a plasticizer, and a release agent are added and mixed to obtain a slurry.

[0046] The content of magnesium hydroxide powder is 0.43% by mass or more and 0.53% by mass or less, the content of silicon oxide powder is 0.039% by mass or more and 0.041% by mass or less, the content of calcium carbonate powder is 0.020% by mass or more and 0.071% by mass or less, and the remainder is aluminum oxide powder and unavoidable impurities, based on a total of 100% by mass of the above powders.

[0047] As the organic binder, for example, acrylic emulsion, polyvinyl alcohol, polyethylene glycol, polyethylene oxide, etc. can be used.

[0048] The slurry is then spray-granulated to obtain granules, which are then molded into a disk shape using an isostatic press, and then machined to form recesses. After the machined process, the molded body is sintered at a temperature of 1500°C to 1650°C for a holding time of 4 to 6 hours to obtain the support part.

[0049] A glass paste is applied to the inner peripheral surface and bottom surface of the bottomed ring, and the porous substrate is placed inside (in the recess) of the bottomed ring and pressurized from the thickness direction (up and down). The glass paste is applied to a thickness of, for example, 40 μm to 200 μm. The glass paste contains, for example, a raw material powder containing, in oxide equivalents, 30% to 65% by mass of Si, 10% to 40% by mass of Al, 10% to 20% by mass of B, 4% to 5% by mass of Ca, 1% to 5% by mass of Mg, and 5% by mass or less of Ti (excluding 0% by mass), and an organic solvent. This pressurized state is maintained, for example, at 900°C to 1400°C in air or vacuum for 1 hour to 10 hours, to obtain a bonded structure in which the porous substrate is bonded to the support.

[0050] Next, the upper surface of the bonded body (the surface to which the object to be attached is attached) is ground. For example, a rotary grinder is used for grinding. The grit size number of the diamond grinding wheel used for grinding is, for example, F150 to F220, as defined in JIS R 6001-1:2017 (ISO 8486-1 (MOD)).

[0051] Next, a first film is formed on the upper surface of the porous substrate, and a second film is formed on the upper surface of the bottomed annular support. When both the first and second films are primarily composed of DLC, the bonded body is placed in a predetermined position in a processing chamber and evacuated to, for example, 1.3 kPa or less. The bonded body is then heated to 100°C to 450°C in a non-oxidizing gas atmosphere such as argon gas or nitrogen gas, or in a high vacuum. Next, in the non-oxidizing gas atmosphere or inert gas atmosphere, high-frequency power and a negative bias voltage are applied to the bonded body to generate discharge plasma, and ions are irradiated onto the upper surface of the bonded body. This ion irradiation removes any oxide film or deposits adhering to the upper surface of the bonded body.

[0052] By supplying a DLC film-forming source gas into a processing vessel and generating a discharge plasma, a film primarily composed of DLC can be formed on the upper surface of the bonded structure. The film formed on the upper surface of the porous substrate is the first film, and the film formed on the upper surface of the bottomed ring is the second film. Examples of the DLC film-forming source gas include hydrocarbon gases such as methane, acetylene, and toluene. The DLC film-forming source gas may contain hydrogen, if necessary.

[0053] When both the first and second films are primarily composed of silicon carbide, the bonded body is placed in a predetermined position within a processing chamber and evacuated to, for example, 1.3 kPa or less. Then, a silane-based gas such as SiCH3Cl3, SiHCl3, or SiH4 and a hydrocarbon gas such as CH4, C2H4, or CCl4 are supplied together with a carrier gas of hydrogen or argon gas at a volume ratio of 5% to 20%. By heating the bonded body to 1100°C to 1500°C in an atmosphere containing the silane-based gas and the hydrocarbon gas, a film primarily composed of silicon carbide can be formed on the main surface. The film formed on the upper surface of the porous substrate is the first film, and the film formed on the upper surface of the bottomed annular body is the second film.

[0054] The suction members according to the present disclosure are employed in various industrial devices, such as cutting devices, polishing devices, processing devices, and inspection devices.

[0055] Figure 5 is a schematic diagram showing an inspection device according to one embodiment of the present disclosure, which is equipped with the suction member shown in Figure 1. The inspection device 10 includes the suction member 1, a vacuum pump 11 as a suction means, an irradiation unit 12 as a light irradiation means, and a CCD camera 13 as an imaging means. The suction member 1 shown in Figure 5 has fewer suction paths 4b and grooves 4c than the suction member 1 shown in Figure 1.

[0056] The irradiation unit 12 irradiates the outer peripheral surface of the adherend W, which is adhered and held on the adsorption surface by the suction of the vacuum pump 11, and the surface of the support 4 with light via a reflection mirror 14. The CCD camera 13 receives light specularly reflected from the outer peripheral surface of the adherend W and the surface of the support 4, captures an image based on that light, and outputs the image to the image processing unit 14. The CCD camera 13 is installed in a position where it is difficult to receive light diffusely reflected from the outer peripheral surface and the surface of the support 4.

[0057] The image processing unit 15 performs binarization processing using a predetermined threshold value on the image input from the CCD camera 13 to obtain a binary image. From this binary image, the contour of the object to be attracted W is extracted, and the center position of the object to be attracted W is extracted. The image processing unit 15 outputs the extracted center position of the object to be attracted W to the control unit 16, whereby various controls are performed.

[0058] The processing apparatus (not shown) of the present disclosure is, for example, a cutting apparatus equipped with an inspection device 10, which cuts the attractable body W into a lattice pattern, or a polishing apparatus which polishes the surface of the attractable body W. The cutting apparatus is equipped with an inspection device, a cutting blade which cuts the attractable body W into a lattice pattern, and a driving means for rotating the cutting blade. The polishing apparatus is equipped with an inspection device, a polishing plate which polishes the surface of the attractable body, and a driving means for rotating the polishing plate so that the polishing plate and the attractable body W slide relative to each other.

[0059] Such a processing device uses the suction device of the present disclosure, which can prevent erroneous recognition of the contour of the object to be attracted W, and therefore can process the object to be attracted W with high precision.

[0060] The adsorption member according to the present disclosure is not limited to the above-described embodiment or other embodiments. For example, in the above-described adsorption members 1 and 1′, the porous substrate 3 is housed in a support 4. However, in the adsorption member according to the present disclosure, the porous substrate does not necessarily have to be housed in a support.

[0061] For example, in the above-described adsorption members 1, 1', both the first membrane 2 and the porous substrate 3 have a circular shape when viewed from above. However, the first membrane and the porous substrate are not limited to being circular, and may have, for example, an elliptical shape when viewed from above, or a polygonal shape such as a triangular shape, a rectangular shape, a pentagonal shape, or a hexagonal shape, depending on the desired application.

[0062] Furthermore, in the above-described adsorption members 1, 1', the first membrane 2 and the porous substrate 3 have the same shape when viewed from above. However, the first membrane and the porous substrate do not need to have the same shape when viewed from above. The shape of the porous substrate is not limited as long as it has a shape that can support the first membrane. [Example]

[0063] The porous substrate was prepared by the following procedure. First, a mixed powder containing 19% by mass of silicon oxide, 2.7% by mass of titanium oxide, 1.3% by mass of magnesium hydroxide, 0.9% by mass of calcium carbonate, and the remainder being aluminum oxide was obtained. The total impurities contained in the obtained mixed powder were 1% by mass or less.

[0064] The resulting mixed powder and solvent were then placed in a barrel mill and wet mixed and pulverized to obtain a slurry. To the resulting slurry, 50 parts by mass of spherical resin was added as a pore-forming material per 100 parts by mass of the mixed powder. Powdered polyethylene with an average particle size of 32.5 μm was used as the spherical resin.

[0065] The slurry was then spray-dried using a spray dryer to obtain granules. The granules were molded by the CIP method at a pressure of 80 MPa, and then machined as necessary to obtain a disk-shaped molded body. The obtained disk-shaped molded body was fired at approximately 1,550°C in an air atmosphere to obtain a disk-shaped porous body (porous substrate) with a porosity of 35% by volume.

[0066] Next, the upper surface of the obtained porous substrate (the surface onto which the adsorbate is to be adsorbed) was ground using a rotary grinder with a diamond grinding wheel having the grit size numbers shown in Table 1. The grit size numbers are specified in JIS R 6001-1:2017 (ISO 8486-1 (MOD)).

[0067] Next, a first film mainly composed of DLC was formed on the top surface of the ground porous substrate. No support was used so that the influence of the support would not be taken into account when measuring the airflow resistance.

[0068] The first film, primarily composed of DLC, was formed using the following procedure. The ground porous substrate was placed in a predetermined position within a processing chamber, which was then evacuated to 1.3 kPa or less. The ground porous substrate was then heated to 300°C in an argon gas atmosphere. Next, high-frequency power and a negative bias voltage were supplied to the ground porous substrate in the argon gas atmosphere to generate discharge plasma. Ions were then irradiated onto the top surface of the ground porous substrate.

[0069] Next, a DLC film-forming source gas was supplied into the processing vessel, and a discharge plasma was generated to form a film mainly composed of DLC on the upper surface of the ground porous substrate. In this way, samples (samples No. 1 to 5) in which a first film mainly composed of DLC was formed on the upper surface of the ground porous substrate were obtained.

[0070] The arithmetic mean tilt angle (RΔa) was measured for the obtained samples No. 1 to No. 5. The arithmetic mean tilt angle (RΔa) was measured in accordance with JIS B 0601:2001 using a shape analysis laser microscope (Keyence Corporation, Ultra-Deep Color 3D Shape Measuring Microscope (VK-X1100)). Specifically, first, the illumination method was set to coaxial incident light, the magnification was set to 240x, the cutoff value λs was not set, the cutoff value λc was set to 0.08 mm, the cutoff value λf was not set, the end effect was corrected, and the measurement range per point from the adsorption surface to be measured was set to 1420 μm × 1070 μm. Then, In each measurement range, four lines to be measured were drawn along the longitudinal direction of the measurement range, and line roughness measurements were performed. The length of each line to be measured was 1282 μm. The measurement range was set at six locations approximately equally spaced along the circumferential direction, for a total of 24 lines to be measured. The average value of the arithmetic mean tilt angle (RΔa) was the average value of the measurements obtained from these 24 lines. The average values ​​of the arithmetic mean tilt angle (RΔa) for samples No. 1 to 5 are shown in Table 1.

[0071] Next, the airflow resistance of the adsorption surface of the first membrane of the obtained samples No. 1 to No. 5 was measured. The airflow resistance was measured using the following procedure. First, a rubber pad attached to the end of a suction tube connected to a vacuum pump was placed on the adsorption surface of the first membrane. A vacuum gauge was attached midway through the suction tube, allowing the reduced pressure value, which represents the airflow resistance, to be read. The reduced pressure value is displayed as a negative value, and the smaller the absolute value, the smaller the airflow resistance and the higher the cleaning efficiency when backwashing from the back surface to the adsorption surface. The rubber pad has a trumpet-shaped suction port that opens on the installation side and has an opening diameter of 50 mm. After placing the rubber pad on the adsorption surface of the first membrane, the vacuum pump was operated and the reduced pressure value indicated by the vacuum gauge was read. The reduced pressure values ​​for samples No. 1 to No. 5 are shown in Table 1.

[0072] [Table 1]

[0073] Next, the number of scratches on the back surface of the adsorbed object was counted. First, a disk-shaped porous body (porous substrate) was obtained using the procedure described above. A support member having a bottomed ring body capable of housing the obtained porous substrate was prepared. Glass was applied to the inner peripheral surface and bottom surface of the bottomed ring body, and the porous substrate was housed inside the bottomed ring body (recess), and pressure was applied from the thickness direction (up and down). In this pressurized state, the porous substrate was held in an air atmosphere at 1200°C for 3 hours to obtain a bonded body in which the porous substrate was bonded to the support member.

[0074] Next, the upper surface of the resulting bonded body (the surface onto which the adsorbed body is attached) was ground using a rotary grinder with diamond grinding wheels having the grit numbers shown in Table 2. The grit numbers are as described above.

[0075] Next, a film mainly composed of DLC was formed using the following procedure. The ground bonded body was placed in a predetermined position in a processing chamber, and the chamber was evacuated to 1.3 kPa or less. The ground bonded body was then heated to 300°C in an argon gas atmosphere. Next, high-frequency power and a negative bias voltage were supplied to the ground bonded body in the argon gas atmosphere to generate discharge plasma. Ions were irradiated onto the top surface of the ground bonded body.

[0076] Next, a DLC film-forming source gas was supplied into the processing vessel, and a discharge plasma was generated to form a film mainly composed of DLC on the upper surface of the ground bonded body. In this way, samples (samples No. 6 to 10) were obtained in which the first and second films mainly composed of DLC were formed on the upper surface of the ground bonded body.

[0077] Next, a semiconductor wafer was used as the object to be adsorbed, and after the semiconductor wafer was repeatedly attached and detached 100 times, the backside of the semiconductor wafer was visually observed and the number of visible scratches was counted. The average values ​​of the arithmetic mean tilt angles (RΔa) and the number of visible scratches for Samples No. 6 to 10 are shown in Table 1. The method for determining the average value of the arithmetic mean tilt angles (RΔa) was as described above.

[0078] [Table 2]

[0079] As shown in Tables 1 and 2, the average value of the arithmetic mean tilt angle (RΔa) is 15° or more and 45° or less for Samples Nos. 2 to 4 and 7 to 9. Therefore, it can be seen that Samples Nos. 2 to 4 and 7 to 9 have few scratches on the backside of the adsorbate (semiconductor wafer), have reduced airflow resistance, and have high cleaning efficiency.

[0080] On the other hand, for samples No. 1 and 6, the average value of the arithmetic mean tilt angle (RΔa) exceeds 45°. This indicates that although the airflow resistance is suppressed, there are many scratches on the backside of the semiconductor wafers. For samples No. 5 and 10, the average value of the arithmetic mean tilt angle (RΔa) is less than 15°. This indicates that although there are few scratches on the backside of the semiconductor wafers, the airflow resistance is high and the cleaning efficiency is poor. [Explanation of symbols]

[0081] 1. Adsorption material 2 1st membrane 2a Adsorption surface 3 Porous substrate 4 Support part 4a Mounting hole 4b Suction path 4c groove 41 Bottomed ring 41a Upper surface of bottomed annular body 41b Outer surface of bottomed annular body 5 Second membrane 5a Annular surface of second membrane 5b Outer periphery of second membrane 10 Inspection equipment 11 Vacuum pump 12 Irradiation unit 13 CCD camera 14 Reflective mirror 15 Image processing section 16 Control Unit

Claims

1. a first film having an adsorption surface for adsorbing an adsorbate; a porous substrate supporting the first membrane; Including, the average value of the arithmetic mean slope angle (RΔa) in the roughness curve of the adsorption surface is 15° or more and 45° or less; Adsorption material.

2. The adsorption member according to claim 1, further comprising: a second membrane having an annular surface surrounding the adsorption surface; and a support portion having a bottomed annular body that supports the second membrane and accommodates the porous substrate.

3. The suction member according to claim 2 , wherein the suction surface and the annular surface are semi-conductive.

4. The adsorption member described in claim 2, wherein the second film has higher fracture toughness than the bottomed ring body, and the thickness of the outer peripheral portion of the second film located on an extension of the outer peripheral surface of the bottomed ring body is greater than the thickness of the first film.

5. The adsorption surface is black, a wavelength in 10 nm intervals in a wavelength range of 360 nm to 740 nm and a reflectance R(λ) of the adsorption surface (where λ is a wavelength (nm) within the wavelength range) have a positive correlation; The slope of the regression equation obtained by logarithmic approximation is 2 or less. The suction member according to claim 1 or 2.

6. the annular surface is black; a wavelength at intervals of 10 nm in a wavelength range of 360 nm to 740 nm has a positive correlation with a reflectance R(λ) of at least one of the annular surface and the adsorption surface (where λ is a wavelength (nm) within the wavelength range); The slope of the regression equation obtained by logarithmic approximation is 2 or less. The suction member according to claim 2 .

7. 3. The suction member according to claim 1, wherein the suction surface is black and the color difference within the suction surface is 3 or less (excluding 0).

8. 3. The suction member according to claim 2, wherein the annular surface is black and the color difference within the annular surface is 3 or less (excluding 0).

9. A processing device comprising the suction member according to claim 1 or 2.

10. An inspection device comprising the suction member according to claim 1 or 2.

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