Mounting board

Abstract

To provide a structure with better heat dissipation properties.SOLUTION: A structure includes a support substrate 71 having a support surface 73, and a structural portion 60 located on the support surface. The structural portion includes an electronic component 50 having an electrode 52 exposed on the support substrate side, and a metal member 61 located in a direction parallel to the support surface relative to the electronic component and having a thickness of 10 μm or more. When viewed along the normal direction to the support surface, the structural portion includes an insulating layer 34 located between the metal member and the electronic component, and a connecting member 32 penetrating the insulating layer and having electrical conductivity.SELECTED DRAWING: Figure 9

Description

[Technical Field]

[0001] FIELD Embodiments of the present disclosure relate to a mounting substrate and a method for manufacturing a mounting substrate. [Background technology]

[0002] Various technologies related to mounting substrates on which electronic components such as semiconductor chips are mounted have been proposed. For example, Patent Document 1 discloses a semiconductor device using a flip-chip bonding method in which a semiconductor chip is mounted on a substrate face-down with the circuit surface facing downward. In the semiconductor device described in Patent Document 1, a coolant path member having a coolant path formed therein is attached to the back surface of the semiconductor chip in order to efficiently release heat generated in the semiconductor chip to the outside. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2010-73866 Summary of the Invention [Problem to be solved by the invention]

[0004] If a heat dissipation member is attached to the back surface of the semiconductor chip as in Patent Document 1, the thickness of the entire semiconductor device increases by the amount of the member.

[0005] An object of the embodiments of the present disclosure is to provide a mounting board that can effectively solve such problems. [Means for solving the problem]

[0006] One embodiment of the present disclosure is a mounting board comprising: a substrate having a first surface and a second surface located opposite the first surface; an electronic component located on the first surface side of the substrate and having an electrode exposed on the side opposite the substrate; a metal member located in a direction parallel to the first surface of the substrate relative to the electronic component and having a thickness of 10 μm or more; an insulating layer at least partially covering the electronic component and the metal member; and a conductive layer having a first portion located on the insulating layer and a second portion that penetrates the insulating layer and electrically connects the first portion to the electrode of the electronic component.

[0007] In a mounting board according to one embodiment of the present disclosure, the board may be provided with a first through hole that overlaps the metal member when viewed along a normal direction of the first surface of the board, and the mounting board may further include a first metal layer located within the first through hole.

[0008] In a mounting board according to one embodiment of the present disclosure, the board may be provided with a second through hole that overlaps the electronic component when viewed along the normal direction of the first surface of the board, and the mounting board may further include a second metal layer located within the second through hole.

[0009] In an embodiment of the mounting substrate according to the present disclosure, the mounting substrate may further include a through electrode that penetrates the substrate from the first surface to the second surface, and a connecting member that penetrates the insulating layer and electrically connects the first portion of the conductive layer and the through electrode.

[0010] In the mounting board according to an embodiment of the present disclosure, the through electrode may be electrically connected to the connection member via a conductive member containing conductive particles and a binder.

[0011] In the mounting board according to the embodiment of the present disclosure, the through electrode may be part of an inductor.

[0012] The mounting board according to the embodiment of the present disclosure may further include a capacitor electrically connected to the through electrode.

[0013] In the mounting substrate according to an embodiment of the present disclosure, the substrate may contain glass.

[0014] One embodiment of the present disclosure is a method for manufacturing a mounting substrate, comprising the steps of: preparing a substrate having a first surface and a second surface located opposite the first surface; arranging, on the first surface side of the substrate, an electronic component having an electrode exposed on the side opposite the substrate, and a metal member having a thickness of 10 μm or more; forming an insulating layer that at least partially covers the electronic component and the metal member; and forming a conductive layer having a first portion located on the insulating layer and a second portion that penetrates the insulating layer and electrically connects the first portion to the electrode of the electronic component.

[0015] In a method for manufacturing a mounting substrate according to one embodiment of the present disclosure, the substrate may include a through electrode that penetrates the substrate from the first surface to the second surface, and the step of forming the conductive layer may include a step of forming a connection member that penetrates the insulating layer and electrically connects the first portion of the conductive layer to the through electrode.

[0016] One embodiment of the present disclosure is a method for manufacturing a mounting substrate, comprising the steps of: preparing a support substrate having a support surface; arranging, on the support surface side of the support substrate, a structural portion including at least an electronic component having an electrode exposed on the support substrate side and a metal member having a thickness of 10 μm or more; joining, to the structural portion, a substrate having a first surface and a second surface located on the opposite side of the first surface; separating the support substrate from the structural portion; forming an insulating layer that at least partially covers the electronic component and the metal member; and forming a conductive layer that has a first portion located on the insulating layer and a second portion that penetrates the insulating layer and electrically connects the first portion to the electrode of the electronic component.

[0017] In a method for manufacturing a mounting substrate according to one embodiment of the present disclosure, the substrate may have a through electrode penetrating the substrate from the first surface to the second surface, and the method may further include a step of forming a connecting member that penetrates the insulating layer and electrically connects to the through electrode, and the step of forming the conductive layer may include a step of electrically connecting the connecting member to the first portion of the conductive layer.

[0018] In a method for manufacturing a mounting substrate according to an embodiment of the present disclosure, the step of joining the substrates may include a step of joining the through electrode and the connection member via a conductive paste containing conductive particles and a binder.

[0019] In the method for manufacturing a mounting substrate according to an embodiment of the present disclosure, the arranging of the metal member may include adhering the metal member with an adhesive.

[0020] In the method for manufacturing a mounting substrate according to an embodiment of the present disclosure, the arranging of the metal member may include forming the metal member by plating.

[0021] In the method for manufacturing a mounting substrate according to an embodiment of the present disclosure, the placement of the electronic components may include adhering the electronic components with an adhesive. [Effects of the Invention]

[0022] According to the embodiment of the present disclosure, a mounting board with better heat dissipation properties can be provided. [Brief explanation of the drawings]

[0023] [Figure 1] FIG. 2 is a cross-sectional view showing a mounting substrate according to an embodiment. [Figure 2] FIG. 10 is a cross-sectional view showing a mounting board according to a first modified example of an embodiment. [Figure 3] FIG. 10 is a cross-sectional view showing a mounting board according to a second modified example of the embodiment. [Figure 4] FIG. 10 is a cross-sectional view showing a mounting board according to a third modified example of the embodiment. [Figure 5] FIG. 10 is a cross-sectional view showing a mounting board according to a fourth modified example of the embodiment. [Figure 6] 3A to 3C are diagrams illustrating a manufacturing process of the mounting substrate according to the first embodiment. [Figure 7] 3A to 3C are diagrams illustrating a manufacturing process of the mounting substrate according to the first embodiment. [Figure 8] 3A to 3C are diagrams illustrating a manufacturing process of the mounting substrate according to the first embodiment. [Figure 9] 10A to 10C are diagrams illustrating a manufacturing process of a mounting substrate according to a second embodiment. [Figure 10] 10A to 10C are diagrams illustrating a manufacturing process of a mounting substrate according to a second embodiment. [Figure 11] 10A to 10C are diagrams illustrating a manufacturing process of a mounting substrate according to a second embodiment. [Figure 12] 10A to 10C are diagrams illustrating a manufacturing process of a mounting substrate according to a second embodiment. [Figure 13] 10A to 10C are diagrams illustrating a manufacturing process of a mounting substrate according to a second embodiment. [Figure 14] 10A to 10C are diagrams illustrating a manufacturing process of a mounting substrate according to a second embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0024] The configuration of a mounting substrate and a manufacturing method thereof according to one embodiment will be described in detail below with reference to the drawings. The following embodiments are merely examples of embodiments of the present disclosure, and the present disclosure should not be construed as being limited to these embodiments. Furthermore, in this specification, terms such as "substrate," "base material," "sheet," and "film" are not distinguished from one another solely based on differences in nomenclature. For example, "substrate" and "base material" are concepts that also include components that may be called sheets or films. Furthermore, terms used in this specification that specify shapes, geometric conditions, and their degrees, such as "parallel" and "orthogonal," as well as values ​​of length and angle, are not limited to their strict meanings but are interpreted to include the extent to which similar functions can be expected. In the drawings referenced in this embodiment, identical or similar symbols are used to designate identical or similarly functional parts, and repeated explanations may be omitted. For convenience of explanation, the dimensional ratios in the drawings may differ from the actual ratios, and some components may be omitted from the drawings.

[0025] Mounting board First, the configuration of a mounting substrate 10 according to one embodiment will be described with reference to Fig. 1. Fig. 1 is a cross-sectional view showing the mounting substrate 10 according to this embodiment.

[0026] 1, the mounting board 10 includes a substrate 12, an electronic component 50, an insulating layer 34, a conductive layer 31, and a metal member 61. Each of the components of the mounting board 10 will be described below.

[0027] (substrate) The substrate 12 has a first surface 13 on an upper side D1 in the thickness direction D of the substrate, and a second surface 14 located on the opposite side, i.e., the lower side, of the first surface 13. The first surface 13 on the upper side D1 is the surface on which the above-mentioned electronic component 50 is mounted. Note that the expressions "upper side" and "lower side" merely represent the relative positional relationship between the first surface 13 and the second surface 14, and do not limit the attitude of the mounting substrate 10 during manufacture or use.

[0028] Substrate 12 may be an organic or inorganic substrate as long as it has a certain level of insulating properties, but preferably contains an inorganic material with a certain level of insulating properties. For example, substrate 12 may be a glass substrate, quartz substrate, sapphire substrate, resin substrate, silicon substrate, silicon carbide substrate, alumina (Al2O3) substrate, aluminum nitride (AlN) substrate, zirconia oxide (ZrO2) substrate, or a laminate of these substrates. Substrate 12 may also partially include a substrate made of a conductive material, such as an aluminum substrate or stainless steel substrate.

[0029] The substrate 12 preferably contains glass, and is even more preferably a glass substrate. Examples of such glass include alkali-free glass. Alkali-free glass is glass that does not contain alkali components such as sodium or potassium. Alkali-free glass contains, for example, boric acid instead of alkali components. Alkali-free glass also contains alkaline earth metal oxides such as calcium oxide or barium oxide. Examples of alkali-free glass include EN-A1 manufactured by Asahi Glass Co., Ltd. and Eagle XG manufactured by Corning Co., Ltd. When the substrate 12 contains glass, the insulating properties and thermal stability of the substrate are improved.

[0030] Although the thickness of the substrate 12 is not particularly limited, it is preferable to use a substrate 12 having a thickness of, for example, 100 μm or more and 800 μm or less. More preferably, the substrate 12 has a thickness of 200 μm or more and 600 μm or less. By making the thickness of the substrate 12 100 μm or more, it is possible to prevent the substrate 12 from warping too much. This prevents the substrate 12 from becoming difficult to handle during the manufacture of the mounting substrate 10. Furthermore, by making the thickness of the substrate 12 800 μm or less, when forming the first through holes 20 and the like described below in the substrate 12, it is possible to prevent an increase in the manufacturing cost of the mounting substrate 10 due to the time required to form the first through holes 20 and the like. Note that the "thickness" refers to the dimension of the target component in the normal direction to the first surface 13 of the substrate 12.

[0031] (electronic parts) The electronic component 50 is located on the first surface 13 and transmits or receives an electrical signal through the conductive layer 31. The electronic component 50 has a main body 51 and an electrode 52 located on an upper side D1 of the main body 51.

[0032] The main body 51 is, for example, a device chip such as an LSI (Large-Scale Integration), a MEMS (Micro Electro Mechanical Systems), or a discrete component. A MEMS is an electronic device in which mechanical components, sensors, actuators, electronic circuits, etc. are integrated on a single substrate. The main body 51 includes at least a base material made of silicon or the like.

[0033] The electrodes 52 are exposed on the upper side D1 of the electronic component 50. Therefore, the electrodes 52 can function as terminals for electrically connecting the electronic component 50 to other components.

[0034] 1, electronic component 50 may be in contact with first surface 13 at an end surface of a lower side D2 of electronic component 50 (hereinafter also referred to as "lower end surface of electronic component 50"). Alternatively, although not shown, other components such as an insulating layer may be present between the lower end surface of electronic component 50 and first surface 13. When the lower end surface of electronic component 50 is bonded to first surface 13, it is bonded to first surface 13 via an adhesive (not shown), such as a die attachment material.

[0035] The thickness of the electronic component 50 is not particularly limited, but is, for example, not less than 50 μm and not more than 100 μm.

[0036] (insulating layer) The insulating layer 34 is an insulating layer that at least partially covers the electronic components 50 and the metal member 61. The material of the insulating layer 34 is not particularly limited as long as it has insulating properties, but organic materials such as polyimide, epoxy, acrylic resin, and polybenzoxazole (PBO) can be used.

[0037] (Conductive layer) The conductive layer 31 is a layer having electrical conductivity and at least partially located on the upper side D1 of the insulating layer 34 or the electronic component 50. The conductive layer 31 functions as, for example, wiring for transmitting electrical signals transmitted or received by the electronic component 50 or the like.

[0038] The conductive layer 31 has a first portion 311 located on the upper side D1 of the insulating layer 34 and a second portion 312 that penetrates the insulating layer 34 to the electrode 52 of the electronic component 50. One end of the second portion 312 in the thickness direction D is connected to the first portion 311, and the other end is connected to the electrode 52.

[0039] The configuration of the conductive layer 31 is not particularly limited as long as the conductive layer 31 is conductive. For example, the conductive layer 31 may be composed of a single conductive layer or may include multiple conductive layers. For example, the conductive layer 31 may include a seed layer located on the insulating layer 34 and a plating layer located on the seed layer. The seed layer is a conductive layer that serves as a base for depositing metal ions in a plating solution to grow a plating layer during the electroplating process to form the plating layer. A conductive material such as copper can be used as the material for the seed layer. The material of the seed layer may be the same as or different from the material of the plating layer. For example, the seed layer may be a laminate film in which titanium and copper are stacked in order, or chromium. The seed layer may be formed by, for example, sputtering, vapor deposition, electroless plating, or the like. The plating layer is a conductive layer formed by electroplating. The plating layer contains copper. The plating layer may contain an alloy of copper and a metal other than copper, such as gold, silver, platinum, rhodium, tin, aluminum, nickel, or chromium, or may be a laminate of copper and a metal other than copper.

[0040] (Metal parts) When the mounting substrate 10 according to this embodiment is viewed along the normal direction of the first surface 13 of the substrate 12, wiring such as the conductive layer 31 described above exists between the end 10e of the mounting substrate 10 and the end 50e of the electronic component 50 in the in-plane direction of the first surface 13. The wiring such as the conductive layer 31 is wiring that can be formed using a semiconductor wafer process. Therefore, the thickness and length of the wiring can be reduced compared to when electrical connection between the electronic component 50 and other components is achieved using wire bonding, bumps, or the like. This allows for increased wiring density.

[0041] On the other hand, the presence of wiring outside the end 50e of the electronic component 50 means that there is an area between the end 50e of the electronic component 50 and the end 10e of the mounting substrate 10. Therefore, heat generated in the electronic component 50 is less likely to be released from the end 10e of the mounting substrate 10 than when the end 50e of the electronic component 50 is closer to the end 10e of the mounting substrate 10. Furthermore, in this embodiment, the substrate 12 preferably contains glass. The thermal conductivity of glass is lower than that of silicon, which is commonly used in semiconductor wafers. Therefore, the contribution of the substrate 12 to thermal conduction in the in-plane direction of the first surface 13 is small. This also contributes to the fact that heat generated in the electronic component 50 is less likely to be released from the end 10e of the mounting substrate 10.

[0042] In view of these problems, the present embodiment proposes providing a metal member 61 on the mounting substrate 10. The metal member 61 is positioned in a direction parallel to the first surface 13 of the substrate 12 with respect to the electronic component 50. Here, "positioned in a parallel direction" means that the metal member 61 at least partially overlaps with the electronic component 50 when viewed along the in-plane direction of the first surface 13 of the substrate 12.

[0043] By arranging the metal member 61, the thermal conductivity of the portion of the mounting board 10 where the metal member 61 is arranged increases, and heat generated by the electronic component 50 is more likely to escape in the in-plane direction of the first surface 13. This improves the heat dissipation of the mounting board. Furthermore, by arranging the metal member 61 in a direction parallel to the first surface 13 of the board 12 with respect to the electronic component 50, it is possible to prevent the thickness of the mounting board 10 from increasing by the thickness of the metal member 61. As a result, the heat dissipation of the mounting board 10 can be improved while keeping the overall thickness of the mounting board 10 small.

[0044] 1, the metal member 61 may be in contact with the first surface 13 at an end surface of the lower side D2 of the metal member 61 (hereinafter also referred to as the "lower end surface of the metal member 61"). Alternatively, although not shown, other components such as an insulating layer may be present between the lower end surface of the metal member 61 and the first surface 13. When the lower end surface of the metal member 61 is bonded to the first surface 13, it is bonded to the first surface 13 via an adhesive material (not shown), such as a die attachment material.

[0045] The material of the metal member 61 is a material having a higher thermal conductivity than the insulating layer 34. For example, the metal member 61 may contain at least one of copper, aluminum, silver, and iron. To further increase the thermal conductivity of the metal member 61, aluminum foil that has been anodized may be used as the metal member 61. Furthermore, for example, the metal member 61 may be an iron alloy containing nickel. Specific examples of iron alloys containing nickel include an iron alloy containing 34% to 38% by mass of nickel, known as Invar material, and an iron alloy containing approximately 42% by mass of nickel, known as 42 alloy.

[0046] The shortest distance between the metal member 61 and the electronic component 50 in the in-plane direction of the first surface 13 of the substrate 12 is preferably 10 μm or more and 30 μm or less. This allows the heat generated in the electronic component 50 to be efficiently transferred to the metal member 61.

[0047] The metal member 61 has a thickness greater than that of the conductive layer that constitutes the wiring, for example, a thickness of 10 μm or more. More preferably, the metal member 61 has a thickness of 50 μm or more. When the metal member 61 has the above thickness, the cross-sectional area of ​​the metal member 61 can be significantly larger than that of the wiring. This reduces the thermal resistance of the metal member 61 in the in-plane direction of the first surface 13 of the substrate 12. Therefore, heat generated in the electronic component 50 can be efficiently transferred in the in-plane direction of the first surface 13 and released to the outside.

[0048] It is preferable that the thickness of the metal member 61 does not greatly exceed the thickness of the electronic component 50. The thickness of the metal member 61 is, for example, 150 μm or less, and may be 100 μm or less. Furthermore, the thickness of the metal member 61 is preferably equal to or less than the thickness of the electronic component 50. This makes it possible to prevent the thickness of the entire mounting substrate 10 from increasing due to the provision of the metal member 61.

[0049] (First through hole and first metal layer) The substrate 12 may be provided with a first through hole 20 that overlaps the metal member 61 when viewed along the normal direction of the first surface 13 of the substrate 12. In this case, a member having a higher thermal conductivity than the substrate 12 is preferably provided inside the first through hole 20. For example, a first metal layer 62 may be located inside the first through hole 20. This allows heat transferred from the electronic component 50 to the metal member 61 to be released in the thickness direction D of the substrate 12 via the first metal layer 62, even if the thermal conductivity of the substrate 12 is low, for example, when the substrate 12 includes glass. This further improves the heat dissipation performance of the mounting substrate 10.

[0050] The shape of the first through hole 20 will be described. The side wall of the first through hole 20 may extend along the normal direction to the first surface 13 of the substrate 12. Alternatively, the side wall may extend in a direction deviated from the normal direction to the first surface 13 of the substrate 12, or a portion of the side wall may be curved.

[0051] Next, the dimensions of the first through hole 20 will be described. The length of the first through hole 20, i.e., the dimension of the first through hole 20 in the normal direction to the first surface 13, is equal to the thickness of the substrate 12. The width of the first through hole 20, i.e., the dimension of the first through hole 20 in the direction parallel to the first surface 13, is, for example, 40 μm or more and 150 μm or less. Furthermore, the ratio of the length to the width of the first through hole 20, i.e., the aspect ratio of the first through hole 20, is, for example, 4 or more and 10 or less.

[0052] The number of first through holes 20 arranged to overlap with the metal member 61 is determined so that the mounting substrate 10 has appropriate heat dissipation properties. For example, in the region of the first surface 13 of the substrate 12 that overlaps with the metal member 61, the density of the first through holes 20 is set to 9 holes / mm 2 In order to ensure the strength of the substrate 12 and reduce the time and cost required to manufacture the mounting substrate 10, the density of the first through holes 20 in the region of the first surface 13 of the substrate 12 that overlaps with the metal member 61 is preferably 50 / mm 2 It is preferable that:

[0053] The shape of the first metal layer 62 is not particularly limited as long as the mounting substrate 10 has appropriate heat dissipation properties. For example, as shown in FIG. 1 , the first through-hole 20 may be filled with the first metal layer 62. That is, the first metal layer 62 may form a so-called filled via. Alternatively, the thickness of the first metal layer 62 may be smaller than the width of the first through-hole 20, so that there may be a space within the first through-hole 20 where the first metal layer 62 is not present. That is, the first metal layer 62 may form a so-called conformal via. Furthermore, when the first metal layer 62 is shaped as a conformal via, the space within the first through-hole 20 may be hollow or may be filled with an organic layer or the like. When the space within the first through-hole 20 is filled with an organic layer, the organic material may be the same as that used to form the insulating layer 34.

[0054] Although not shown in FIG. 1, the first metal layer 62 may extend from the sidewall of the first through-hole 20 onto the first surface 13 or the second surface 14 of the substrate 12 .

[0055] Similar to the conductive layer 31, the first metal layer 62 may include a seed layer and a plating layer stacked in this order from the sidewall side of the first through hole 20. The material constituting the first metal layer 62 may be the same as the material of the conductive layer 31.

[0056] (Effects of this embodiment) In the mounting substrate 10 according to this embodiment, there is a region between the end 50e of the electronic component 50 and the end 10e of the mounting substrate 10 where components such as conductive layers and insulating layers can be located. Therefore, wiring electrically connected to the electrodes 52 of the electronic component 50 can be provided in the region between the end 50e of the electronic component 50 and the end 10e of the mounting substrate 10 using the conductive layer 31 described above. In this case, forming the conductive layer 31 using a semiconductor wafer process allows for finer wiring. This allows for a higher wiring density than when electrical connection between the electronic component 50 and other components is achieved using wire bonding or the like.

[0057] Furthermore, in the mounting substrate 10 according to this embodiment, the electrodes 52 of the electronic component 50 are exposed on the upper side D1 of the electronic component 50. This allows the electrodes 52 of the electronic component 50 to be electrically connected to the conductive layer 31 without using bumps. This allows the electronic component 50 to be easily mounted on the substrate 12.

[0058] Furthermore, the mounting board 10 according to this embodiment includes a metal member 61 that is located in a direction parallel to the first surface 13 of the board 12 with respect to the electronic component 50. This makes it possible to reduce the overall thickness of the mounting board 10 while facilitating the heat generated by the electronic component 50 to escape in the in-plane direction of the first surface 13. This improves the heat dissipation performance of the mounting board 10.

[0059] Furthermore, according to the mounting board 10 of this embodiment, the heat that escapes through the metal member 61 can be further dissipated in the thickness direction D of the board 12 via the first metal layer 62. This allows the heat dissipation performance of the mounting board 10 to be further improved.

[0060] (First Modification of Mounting Board) Next, a first modification of the above-described embodiment will be described. Fig. 2 is a cross-sectional view showing a mounting substrate 10 according to the first modification.

[0061] 2, in the mounting substrate 10 of the first modification, the substrate 12 is provided with a second through-hole 21 that overlaps with the electronic component 50 when viewed along the normal direction of the first surface 13. A second metal layer 63 is located within the second through-hole 21.

[0062] The shape, size and number of the second through holes 21 and the shape of the second metal layer 63 may be similar to those of the first through holes 20 and the first metal layer 62, respectively.

[0063] Similar to the conductive layer 31, the second metal layer 63 may include a seed layer and a plating layer stacked in this order from the sidewall side of the second through hole 21. The material constituting the second metal layer 63 may be the same as the material that can be used for the conductive layer 31.

[0064] According to the first modification, even if the thermal conductivity of the substrate 12 is low, for example, when the substrate 12 contains glass, the heat generated by the electronic component 50 can be dissipated in the thickness direction D of the substrate 12 via the second metal layer 63. This makes it possible to further improve the heat dissipation performance of the mounting substrate 10.

[0065] (Second Modification of Mounting Board) Next, a second modification of the above-described embodiment will be described. Fig. 3 is a cross-sectional view showing a mounting substrate 10 according to the second modification.

[0066] As shown in FIG. 3, the mounting substrate 10 of the second modified example includes a through electrode 23 that penetrates the substrate 12, and a connection member 32 that penetrates the insulating layer 34 and electrically connects the first portion 311 of the conductive layer 31 and the through electrode 23.

[0067] The shape and dimensions of the third through hole 22 and the shape and material of the through electrode 23 are not particularly limited as long as the through electrode 23 is conductive. For example, the third through hole 22 and the through electrode 23 may have the same shape and material as the first through hole 20 and the first metal layer 62, respectively.

[0068] Similar to the conductive layer 31, the through electrode 23 may include a seed layer and a plating layer stacked in this order from the sidewall side of the third through hole 22. The material forming the through electrode 23 may be similar to the material of the conductive layer 31.

[0069] Similar to the conductive layer 31, the connection member 32 may include a seed layer and a plating layer stacked in this order on the upper side D1 of the insulating layer 34. The material constituting the second metal layer 63 may be similar to the material of the conductive layer 31.

[0070] The through electrode 23 may be electrically connected to the connection member 32 via a conductive member containing at least conductive particles and a binder, which are not shown in Fig. 3. The conductive member is a member formed by solidifying a conductive paste, which will be described later.

[0071] (Third Modification of Mounting Board) Next, as a third modification of the above-described embodiment, an example will be described in which the through electrode 23 shown in the second modification constitutes a part of an inductor. Fig. 4 is a cross-sectional view showing the mounting substrate 10 according to the third modification. Fig. 4 is a cross-sectional view corresponding to the AA cross section of Fig. 3.

[0072] 4, in the mounting substrate 10 of the third modification, the conductive layer 31, the through electrode 23, and the second-surface first conductive layer 41 located on the second surface 14 side of the substrate 12 are connected to form a spiral structure. That is, the through electrode 23, together with the conductive layer 31 and the second-surface first conductive layer 41 located on the second surface 14 side of the substrate 12, form the inductor 17.

[0073] The second-surface first conductive layer 41 is a conductive layer located on the second surface 14 side of the substrate 12. At least a portion of the second-surface first conductive layer 41 is electrically connected to the through electrode 23. The second surface first conductive layer 41 may have a portion that is not electrically connected to the through electrode 23.

[0074] Similar to the conductive layer 31, the second-surface first conductive layer 41 may include a seed layer and a plating layer stacked in this order on the second surface 14 of the substrate 12. The material constituting the second-surface first conductive layer 41 may be similar to the material of the conductive layer 31.

[0075] 4, in the third modification, the metal member 61 preferably extends in both a direction D5 along which the third through holes 22 in which the through electrodes 23 constituting the inductor 17 are located are aligned on the first surface 13, and a direction D6 perpendicular to direction D5. This allows the heat generated by the inductor 17 to easily escape, thereby improving the heat dissipation performance of the mounting substrate 10.

[0076] According to the third modification, the inductor 17 and the electronic component 50 can be electrically connected via the conductive layer 31, and therefore the electronic component 50 can be easily mounted on the substrate 12 having the inductor 17. Furthermore, by providing the metal member 61, heat generated by the electronic component 50 and the inductor 17 can be easily dissipated in the in-plane direction of the first surface 13, and the heat dissipation performance of the mounting substrate 10 can be improved.

[0077] (Fourth Modification of Mounting Board) Next, a fourth modification of the above-described embodiment will be described below. Fig. 5 is a cross-sectional view showing a mounting substrate 10 according to the fourth modification.

[0078] As shown in FIG. 5, in the fourth modification, the mounting substrate 10 includes a capacitor 15 electrically connected to the through electrode 23.

[0079] Capacitor 15 is located on the second surface 14 side of substrate 12. Capacitor 15 is, for example, a capacitor having an MIM (Metal-Insulator-Metal) structure. In the example of FIG. 5, capacitor 15 is located approximately opposite electronic component 50 with respect to substrate 12. The position of capacitor 15 is not limited to the embodiment of FIG. 5, and may be, for example, a position shifted in the planar direction along second surface 14 from a position on the underside D2 of second surface 14, which is directly opposite electronic component 50. Capacitor 15 may also be located on the first surface 13 side of substrate 12.

[0080] The capacitor 15 may have, for example, a second surface first conductive layer 41 that is electrically connected to the through electrode 23 and that constitutes an electrode located on the substrate 12 side, a second surface inorganic layer 42 that constitutes an insulator, and a second surface second conductive layer 43 that constitutes an electrode located farther from the substrate 12 than the lower electrode.

[0081] The second-surface inorganic layer 42 is located on the lower side D2 of the second-surface first conductive layer 41, contains an inorganic material, and is an insulating layer. The second-surface inorganic layer 42 may have a portion of the capacitor 15 other than the insulator.

[0082] Silicon nitrides such as SiN can be used as the inorganic material for the second-side inorganic layer 42. Other examples of inorganic materials for the second-side inorganic layer 42 include silicon oxide, aluminum oxide, and tantalum pentoxide. The second-side inorganic layer 42 may be composed of a single layer or multiple layers.

[0083] The second-surface inorganic layer 42 may be formed by, for example, plasma CVD, sputtering, etc. The second-surface inorganic layer 42 may also be processed into a size and shape suitable for the capacitor 15 by, for example, reactive ion etching.

[0084] The second-surface second conductive layer 43 is a conductive layer located on the lower side D2 of the second-surface inorganic layer 42. The second-surface second conductive layer 43 may have a portion other than the electrode of the capacitor 15.

[0085] Similar to the conductive layer 31, the second-surface second conductive layer 43 may include a seed layer and a plating layer laminated in this order on the lower side D2 of the second-surface inorganic layer 42. The material constituting the second-surface second conductive layer 43 may be similar to the material of the conductive layer 31.

[0086] According to the fourth modification, the capacitor 15 and the electronic component 50 can be electrically connected via the through electrode 23 and the conductive layer 31, so that the electronic component 50 can be easily mounted on the substrate 12 having the capacitor 15. Furthermore, by providing the metal member 61, heat generated by the electronic component 50 and the capacitor 15 can be easily dissipated in the in-plane direction of the first surface 13, and the heat dissipation performance of the mounting substrate 10 can be improved.

[0087] Mounting board manufacturing method A method for manufacturing the mounting substrate 10 will now be described.

[0088] Manufacturing method of mounting substrate according to the first embodiment First, a method for manufacturing a mounting substrate according to the first embodiment will be described with reference to Figures 6 to 8. Here, an example of manufacturing the mounting substrate 10 shown in Figure 1 will be described.

[0089] (Substrate preparation process) 6 is a cross-sectional view showing a manufacturing method of the mounting substrate 10 according to this embodiment. First, the substrate 12 is prepared. Here, as shown in FIG. 6, the substrate 12 is prepared, which includes the first through hole 20 and the first metal layer 62. The first through hole 20 and the first metal layer 62 can be formed, for example, by the following method.

[0090] First, a resist layer is provided on at least one of the first surface 13 and the second surface 14. After that, an opening is provided in the resist layer at a position corresponding to the first through hole 20.

[0091] Next, the substrate 12 is processed at the openings in the resist layer, thereby forming first through holes 20 in the substrate 12 as shown in Fig. 6. Methods that can be used to process the substrate 12 include dry etching methods such as reactive ion etching and deep reactive ion etching, and wet etching.

[0092] The first through holes 20 may be formed in the substrate 12 by irradiating the substrate 12 with a laser. In this case, a resist layer does not need to be provided. As a laser for laser processing, an excimer laser, an Nd:YAG laser, a femtosecond laser, or the like can be used. When an Nd:YAG laser is used, a fundamental wave with a wavelength of 1064 nm, a second harmonic with a wavelength of 532 nm, a third harmonic with a wavelength of 355 nm, or the like can be used.

[0093] Furthermore, laser irradiation and wet etching can be combined as appropriate. Specifically, first, an altered layer is formed in the region of the substrate 12 where the first through hole 20 is to be formed by laser irradiation. Next, the substrate 12 is immersed in hydrogen fluoride or the like to etch the altered layer. In this way, the first through hole 20 can be formed in the substrate 12. Alternatively, the first through hole 20 can be formed in the substrate 12 by blasting, in which an abrasive is sprayed onto the substrate 12.

[0094] After the first through hole 20 is formed, a first metal layer 62 is formed on the side wall of the first through hole 20, as shown in FIG. 6 . Specifically, a seed layer is formed on the side wall by sputtering, vapor deposition, electroless plating, or the like. After forming the seed layer, if there is a region where the first metal layer 62 is not intended to be provided, a resist layer is formed on the seed layer in that region. After forming the resist layer, a plating layer is formed by electroplating on the seed layer not covered by the resist layer. Next, the resist layer is removed. Thereafter, the portion of the seed layer where the resist layer was formed is removed by wet etching. This allows the first metal layer 62, including the seed layer and the plating layer, to be formed inside the first through hole 20, etc. Note that a step of annealing the plating layer may be performed after the electroplating step.

[0095] Although not shown in FIG. 6, the first metal layer 62 may extend from the sidewall of the first through-hole 20 onto the first surface 13 or the second surface 14 of the substrate 12 .

[0096] 6, the shape of the first metal layer 62 may be a conformal via. That is, the first through hole 20 may have a space where the first metal layer 62 is not present. In this case, an organic layer may be formed inside the first through hole 20. The organic layer can be formed, for example, by the following process.

[0097] After forming the first metal layer 62, a film including a resin layer for forming an organic layer is placed on the first surface 13 and the second surface 14 of the substrate 12. Next, the film is pressed to force the resin layer into the first through hole 20. The resin layer forced into the first through hole 20 is then cured by, for example, irradiating the resin layer with light. Furthermore, unnecessary portions of the resin layer are removed. In this manner, an organic layer can be formed inside the first through hole 20. Note that the step of forming the organic layer inside the first through hole 20 may be performed after the step of arranging the electronic component 50 and the metal member 61, which will be described later. In this case, the organic layer inside the first through hole 20 and the insulating layer 34 at least partially covering the electronic component 50 and the metal member 61 may be simultaneously formed using the same material.

[0098] 6 shows an example in which the substrate 12 of the mounting substrate 10 shown in Fig. 1 is prepared, but the present invention is not limited to this, and the substrate 12 of the mounting substrate 10 shown in Fig. 2 or 3 may be prepared. The second through hole 21 and the second metal layer 63 of the mounting substrate 10 shown in Fig. 2, and the third through hole 22 and the through electrode 23 shown in Fig. 3 can be formed by a method similar to the method for forming the first through hole 20 and the first metal layer 62.

[0099] (Electronic component and metal component placement process) Fig. 7 is a cross-sectional view showing the method for manufacturing the mounting substrate 10 according to the present embodiment, following Fig. 6. After the first metal layer 62 is formed, the electronic component 50 and the metal member 61 are arranged on the first surface 13 of the substrate 12, as shown in Fig. 7.

[0100] [Electronic component placement] The method for arranging the electronic components 50 is not particularly limited, but may include a step of adhering the electronic components 50 with an adhesive.

[0101] For example, first, a die attachment material in the form of a film is placed as an adhesive at the placement position of electronic component 50. Next, electronic component 50 is placed at the placement position with its circuit surface including electrodes 52 facing upward D1, face up. This allows electronic component 50 to be temporarily fixed onto first surface 13 by the adhesive force of the die attachment material.

[0102] [Arrangement of metal parts] The method for arranging the metal members 61 is not particularly limited, but may include a step of adhering the metal members 61 with an adhesive, or a step of forming the metal members 61 by plating.

[0103] When the metal member 61 is bonded to the substrate 12 with an adhesive, a metal member whose thickness has been adjusted in advance can be used, so that deviation of the thickness of the metal member from the design can be suppressed.

[0104] When the metal member 61 is formed by plating, a separate member such as wiring may be formed on the first surface 13 at the same time as the metal member 61.

[0105] (Insulating layer formation process) 8, an insulating layer 34 is formed on the first surface 13, on the electronic component 50, or on the metal member 61. In addition, a first insulating layer through-hole 34a is formed so as to penetrate the insulating layer 34 in the thickness direction D up to the electrode 52 of the electronic component 50.

[0106] The insulating layer 34 and the first insulating layer through-holes 34a can be formed, for example, by the following method. First, a film having a photosensitive layer containing an organic material and a base material is attached to the first surface 13 side of the substrate 12. Next, the film is subjected to an exposure process and a development process. In this way, the insulating layer 34 made of the photosensitive layer of the film and having the first insulating layer through-holes 34a formed therein can be formed on the first surface 13 side of the substrate 12.

[0107] (Conductive layer forming process) 1, a conductive layer 31 is formed, which includes a first portion 311 located on the insulating layer 34 and a second portion 312 penetrating the insulating layer 34. The conductive layer 31 may be formed by stacking seed layers and plating layers using a method similar to that used to form the first metal layer 62.

[0108] In addition, when the substrate 12 has a through electrode as shown in Figure 3, a connecting member that penetrates the insulating layer 34 and electrically connects the first portion 311 of the conductive layer 31 to the through electrode may be formed as part of the conductive layer 31 simultaneously with the first portion 311 and the second portion 312.

[0109] The above steps result in the mounting substrate 10 shown in Fig. 1. According to the method for manufacturing a mounting substrate of this embodiment, the provision of the metal member 61 makes it easier for heat generated by the electronic component 50 to escape in the in-plane direction of the first surface 13, making it possible to provide a mounting substrate 10 with better heat dissipation properties.

[0110] Manufacturing method of mounting substrate according to the second embodiment The method for manufacturing a mounting board according to the first embodiment described above has been exemplified by arranging electronic components 50, metal members 61, insulating layer 34, and conductive layer 31 in this order on first surface 13 of substrate 12. In the method for manufacturing a mounting board according to the second embodiment, first, electronic components 50 and metal members 61 are formed on support surface 73 of support substrate 71, and then electronic components 50 and metal members 61 are transferred from support substrate 71 to substrate 12, thereby obtaining mounting board 10 including substrate 12, electronic components 50, and metal members 61. The method for manufacturing a mounting board according to this embodiment will be described below with reference to FIGS. 9 to 14. Here, an example of manufacturing mounting board 10 shown in FIG. 3 will be described.

[0111] (Support substrate preparation process) 9 is a cross-sectional view showing a method for manufacturing the mounting substrate 10 according to this embodiment. First, a support substrate 71 having a support surface 73 is prepared. The material of the support substrate 71 is arbitrary as long as it can appropriately support the electronic components 50 and the metal member 61. For example, the material of the support substrate 71 may be the same as the material of the substrate 12.

[0112] (Structural part formation process) After preparing the support substrate 71, as shown in FIG. 9, the electronic component 50 having the electrode 52 exposed on the support substrate 71 side and the metal member 61 are arranged on the support surface 73 side of the support substrate 71.

[0113] Components other than the electronic components 50 and the metal members 61 may be further provided on the support surface 73 side of the support substrate 71. For example, a part of the insulating layer 34 that at least partially covers the electronic components 50 and the metal members 61 may be formed on the support surface 73 side of the support substrate 71. Furthermore, as shown in FIG. 10 , the insulating layer 34 may be formed so as to fill the gap between the electronic components 50 and the metal members 61. In the following description, the multiple components including at least electronic components 50 and metal members 61 that are provided on the support surface 73 side of the support substrate 71 and that later transfer from the support substrate 71 side to the substrate 12 side are also referred to as structural parts 60.

[0114] If the structural part 60 includes an insulating layer 34 located in the gap between the electronic component 50 and the metal member 61, in the process of joining the structural part 60 to the substrate 12 described below, the joining surface between the structural part 60 and the substrate 12 becomes wider, so that the substrate 12 can be more firmly joined to the structural part 60. Furthermore, although not shown, even if the electronic component 50 and the metal member 61 have different thicknesses, by forming an insulating layer 34 on the upper side D3 of the electronic component 50 or the metal member 61, the surface of the upper side D3 of the structural part 60 can be flattened, and in the process of joining the substrate 12, the substrate 12 can be more firmly joined to the structural part 60.

[0115] As a method for forming a portion of the insulating layer 34 on the support surface 73 side of the support substrate 71, a method similar to the method for forming the insulating layer 34 on the first surface 13 of the substrate 12, on the electronic component 50, or on the metal member 61 in the manufacturing method of the mounting substrate according to the first embodiment can be used.

[0116] (Connection member forming process) 9, before, after, or simultaneously with the step of arranging the electronic component 50 and the metal member 61. For example, the connection member 32 can be formed on the support surface 73 of the support substrate 71 by a method similar to the method of forming the first metal layer 62 on the side wall of the first through hole 20 in the method of manufacturing the mounting board according to the first embodiment.

[0117] (Substrate preparation process) 10 , a substrate 12 is prepared, which has a first surface 13 and a second surface 14 located opposite the first surface. The substrate 12 may have a first through hole 20 and a first metal layer 62 so as to overlap a metal member 61 when viewed along the normal direction of the first surface 13 of the substrate 12. The substrate 12 may also have a third through hole 22 and a through electrode 23 that penetrates the substrate 12 from the first surface 13 to the second surface 14.

[0118] (Bonding process of substrates) After the substrate 12 is prepared, a bonding step is carried out to bond the substrate 12 to the structural portion 60, as shown in FIGS.

[0119] 11, the bonding step may include a step of bonding the through electrode 23 and the connection member 32 via a conductive paste 81 containing conductive particles and a binder. By including this step, it is possible to form a conductive member using the conductive paste 81 while bonding the substrate 12 to the structural part 60, and to electrically connect the through electrode 23 to the connection member 32 via the conductive member.

[0120] The conductive paste contains at least conductive particles and a binder, and may contain a solvent, additives, etc. as needed. The conductive particles may be any particles that are conductive, and specifically, metal particles may be used. Examples of metals used for the metal particles include copper, silver, and alloys using these. The conductive particles may be a combination of multiple types of metal particles. Furthermore, a resin may be used as the binder. Examples of resins used for the binder include epoxy resins.

[0121] (Support substrate separation process) After the bonding process of the substrate 12, the support substrate 71 is separated from the structural unit 60 as shown in FIG. 13 . Here, the figures from FIG. 13 onward are shown upside down compared to FIG. 12 . The specific method for separating the support substrate 71 is not particularly limited. For example, the structural unit 60 can be separated by reducing the adhesive strength between the support substrate 71 and the structural unit 60 to be lower than the adhesive strength between the structural unit 60 and the substrate 12, and then peeling off the support substrate 71. Specifically, in the process of forming the structural unit 60 on the support substrate 71, a thermally peelable temporary adhesive sheet is interposed between the support substrate 71 and the structural unit 60. In the separation process, the temporary adhesive sheet is heated to a peeling temperature to reduce the adhesive strength between the structural unit 60 and the support substrate 71, and then the support substrate 71 is peeled off, thereby achieving separation. In this case, the peeling temperature is set so as not to damage the components of the structural unit 60, such as the connecting member 32.

[0122] (Insulating layer formation process) After the step of separating the support substrate 71, an insulating layer 34 is formed to at least partially cover the electronic components 50 and the metal members 61, as shown in Fig. 14. For example, the insulating layer 34 can be formed by a method similar to the method for forming the insulating layer 34 in the method for manufacturing a mounting substrate according to the first embodiment.

[0123] In addition, as shown in Figure 13, if the structural part 60 includes a portion of the insulating layer 34, an additional insulating layer 34 is formed on the upper side D1 of the insulating layer 34 of the structural part 60, the electronic component 50, and the metal member 61, as shown in Figure 14.

[0124] (Conductive layer forming process) 3, a conductive layer 31 is formed, which includes a first portion 311 located on the insulating layer 34 and a second portion 312 penetrating the insulating layer 34. The conductive layer 31 may be formed by stacking a seed layer and a plating layer using a method similar to the method for forming the first metal layer 62 in the method for manufacturing a mounting substrate according to the first embodiment.

[0125] The above steps result in the mounting substrate 10 shown in Fig. 3. In the method for manufacturing a mounting substrate of this embodiment, the provision of the metal member 61 also makes it easier for heat generated by the electronic component 50 to escape in the in-plane direction of the first surface 13, making it possible to provide a mounting substrate 10 with better heat dissipation properties.

[0126] Although several modifications of the above-described embodiment have been described, it is of course possible to combine a plurality of modifications as appropriate. [Explanation of symbols]

[0127] 10 Mounting board 12 PCB 13 Page 1 14 Side 2 15 Capacitor 17 Inductors 20 First through hole 21 Second through hole 22 Third through hole 23 Through electrode 31 Conductive layer 311 Part 1 312 Part 2 32 Connecting member 34 Insulating layer 34a First insulating layer through hole 34b Second insulating layer through hole 41 Second surface first conductive layer 42 Second side inorganic layer 43 Second surface, second conductive layer 50 Electronic Components 51 Main body 52 electrodes 60 Structural section 61 Metallic parts 62 1st metal layer 63 Second metal layer 71 Support substrate 73 Support surface 81 Conductive paste

Claims

1. A mounting board, a substrate having a first surface and a second surface opposite the first surface; an electronic component located on the first surface side of the substrate and having an electrode exposed on the side opposite to the substrate; a metal member that is located in a direction parallel to the first surface of the substrate with respect to the electronic component, includes a lower end surface that faces the first surface of the substrate, and has a thickness of 10 μm or more; a covering insulating layer that at least partially covers the electronic component and the metal member; a conductive layer having a first portion located on the covering insulating layer and a second portion penetrating the covering insulating layer and electrically connecting the first portion to the electrode of the electronic component; an intermediate insulating layer located between the lower end surface of the metal member and the first surface, the intermediate insulating layer including an organic material; the metal member includes a portion located at an end of the mounting substrate in an in-plane direction of the first surface, The electronic component has a thickness of 50 μm or more and 100 μm or less.

2. the substrate is provided with a first through hole that overlaps with the metal member when viewed along a normal direction of the first surface of the substrate; The mounting substrate according to claim 1 , further comprising a first metal layer located in the first through hole.

3. The mounting board according to claim 2 , wherein the first metal layer forms a filled via in the first through hole.

4. a second through hole is provided in the substrate, the second through hole overlapping the electronic component when viewed along a normal direction of the first surface of the substrate; The mounting board according to claim 1 , further comprising a second metal layer located in the second through hole.

5. The mounting board according to claim 4 , wherein the second metal layer forms a filled via in the second through hole.

6. 6. The mounting substrate according to claim 1, further comprising a through electrode located in a third through hole that penetrates the substrate from the first surface to the second surface and is electrically connected to the first portion of the conductive layer.

7. The mounting board according to claim 6 , wherein the through electrode forms a filled via in the third through hole.

8. The mounting board according to claim 1 , wherein the substrate contains glass.

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