Method for measuring the height of semiconductor microbumps

Abstract

Provide a method for measuring the height of microbumps of a semiconductor capable of determining the presence or absence of defects. 【Solution means】The method includes capturing an image of the top of the measurement target with a first image capture unit, and detecting a first movement distance d between the work platform or the first light source and the first image capture unit with a sensor unit; capturing an image of the top of the measurement target with a second image capture unit, and detecting a second movement distance D between the work platform or the second light source and the second image capture unit with a sensor unit; when d = D, determining by a processing unit that the height of the measurement target is equal to the height of the reference target; when d > D, calculating the height of the measurement target by the formula ΔH=(d - D)×tan(θ), H = H s +ΔH; when d < D, calculating the height of the measurement target by the formula ΔH=(D - d)×tan(θ), H = H s -ΔH.

Description

[Technical Field]

[0001] The present invention relates to a measurement method, and more particularly to a method for measuring the height of semiconductor microbumps. [Background technology]

[0002] Semiconductors are substances or materials whose electrical conductivity lies between that of metal conductors and insulators. The surface of semiconductors contains microbumps such as bonding pads, copper posts, metal eutectics, and metal contacts. However, the height of the microbumps can be either too high or too low, resulting in uneven microbump heights, both of which can be considered defects.

[0003] However, it is recognized that currently there is no detection method for detecting the presence or absence of defects in semiconductor microbumps. Summary of the Invention [Problem to be solved by the invention]

[0004] A primary object of the present invention is to provide a method for measuring the height of a semiconductor microbump, which can accurately measure the height of the measurement object and determine whether or not the measurement object has a defect. [Means for solving the problem]

[0005] In order to achieve the above object, the present invention provides a method for measuring the height of a semiconductor micro-bump, comprising: placing a reference object and a measurement object on a work platform; the reference object and the measurement object are both spherical; and the height of the reference object is H S a step in which the height of the measurement object is H, and the reference object and the measurement object are both semiconductor microbumps; simultaneously reflecting a light beam from a first light source and a light beam from a second light source on the top of the reference object, capturing an image of the top of the reference object by the reflected light of the first light source with a first image capture unit, capturing an image of the top of the reference object by the reflected light of the second light source with a second image capture unit, wherein the light beam from the first light source and a horizontal plane passing through the top of the reference object form a first angle, and the reflected light from the first light source and a horizontal plane passing through the top of the reference object form a second angle, and the first angle is equal to the second angle; moving the work platform or moving the first light source, the second light source, the first image capture unit, and the second image capture unit; reflecting the light beam of the first light source on the top of the measurement object, capturing an image of the top of the measurement object by the reflected light of the first light source with the first image capture unit, and detecting a first moving distance of the working platform or a first moving distance between the first light source and the first image capture unit with a sensor unit, wherein the first moving distance is d; reflecting the light beam of the second light source on the top of the measurement object, capturing an image of the top of the measurement object by the reflected light of the second light source with the second image capture unit, and detecting a second moving distance of the working platform or a second moving distance between the second light source and the second image capture unit with the sensor unit, wherein the second moving distance is D; If the first moving distance is equal to the second moving distance, the processing unit determines that the height of the measurement object is equal to the height of the reference object and the measurement object is a non-defective product; if the first moving distance is greater than the second moving distance, the processing unit determines that the height of the measurement object is greater than the height of the reference object and the measurement object is a defective product; and, ΔH=(dD)×tan(θ),H=H s+ΔH, θ is equal to the first angle; if the first moving distance is smaller than the second moving distance, the processing unit determines that the height of the measurement object is smaller than the height of the reference object and the measurement object is defective; and, ΔH=(Dd)×tan(θ), H=H s and calculating the height of the measurement object using a formula where -ΔH and θ are equal to the first angle. [Effects of the Invention]

[0006] The effect of the present invention is that the method of the present invention can accurately measure the height of the measurement object, and can accurately determine whether or not there is a defect in the measurement object based on the height difference between the reference object and the measurement object. [Brief explanation of the drawings]

[0007] [Figures 1A-1D] 1 is a flow chart of a first embodiment of a method according to the present invention; [Figure 2] 2 is a schematic diagram of steps S10 and S20 of a first embodiment of the method according to the present invention. FIG. [Figure 3] 2 is a schematic diagram of steps S30, S40, S50, and S61 of a first embodiment of the method according to the present invention. [Figure 4] FIG. 2 is a schematic diagram showing the connection relationship between the sensor unit and the processing unit of the present invention. [Figures 5A-5D] 2 is a schematic diagram of steps S30, S40, S50 and S62 of a first embodiment of the method according to the present invention. [Figures 6A-6D] 2 is a schematic diagram of steps S30, S40, S50 and S63 of a first embodiment of the method according to the present invention. [Figure 7] 5 is a schematic diagram of steps S10 and S20 of a second embodiment of the method according to the present invention. FIG. [Figures 8A-8D] 4 is a flowchart of a third embodiment of the method according to the present invention. [Figure 9A-9B]10 is a schematic diagram of steps S10 and S20 of a third embodiment of the method according to the present invention. FIG. [Figure 10] 2 is a schematic diagram of the connection relationship between a first image capturing unit, a second image capturing unit and a processing unit according to the present invention; FIG. [Figures 11A-11B] 5 is a schematic diagram of steps S30, S40, S50 and S61 of a third embodiment of the method according to the present invention. [Figures 12A-12F] 5 is a schematic diagram of steps S30, S40, S50 and S62 of a third embodiment of the method according to the present invention. [Figures 13A-13F] 5 is a schematic diagram of steps S30, S40, S50 and S63 of a third embodiment of the method according to the present invention. [Figure 14] 10 is a schematic diagram of steps S10 and S20 of a fourth embodiment of the method according to the present invention. FIG. DETAILED DESCRIPTION OF THE INVENTION

[0008] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the embodiments of the present invention will be described in more detail with reference to the drawings and reference numerals, so that those skilled in the art can practice the present invention after reading the specification.

[0009] 1A to 1D are flowcharts of a first embodiment of a method according to the present invention. FIG. 2 is a schematic diagram of steps S10 and S20 of a first embodiment of a method according to the present invention. FIG. 3 is a schematic diagram of steps S30, S40, S50, and S61 of a first embodiment of a method according to the present invention. FIG. 4 is a schematic diagram of the connection relationship between a sensor unit 70 and a processing unit 80 of the present invention. FIGS. 5A to 5D are schematic diagrams of steps S30, S40, S50, and S62 of a first embodiment of a method according to the present invention. FIGS. 6A to 6D are schematic diagrams of steps S30, S40, S50, and S63 of a first embodiment of a method according to the present invention. The present invention provides a method for measuring the height of semiconductor microbumps, comprising the following steps:

[0010] In step S10, as shown in FIG. 1A and FIG. 2, one reference object 10 and a plurality of measurement objects 11, 12, 13 are placed on a working platform 20. The reference object 10 and the measurement objects 11, 12, 13 are both spherical in shape, and the height of the reference object 10 is H S (See Figure 3), the height of measurement object 11 is H1 (see Figure 3), the height of measurement object 12 is H2 (see Figure 5D), and the height of measurement object 13 is H3 (see Figure 6D), and reference object 10 and these measurement objects 11, 12, and 13 are all semiconductor microbumps.

[0011] 1A and 2, in step S20, the light beam from the first light source 30 and the light beam from the second light source 40 are simultaneously reflected by the top of the reference object 10, the first image capture unit 50 captures an image of the top of the reference object 10 using the reflected light from the first light source 30, and the second image capture unit 60 captures an image of the top of the reference object 10 using the reflected light from the second light source 40, where a first angle α1 is formed between the light beam from the first light source 30 and a horizontal plane 90 passing through the top of the reference object 10, and a second angle α2 is formed between the reflected light from the first light source 30 and the horizontal plane 90 passing through the top of the reference object 10, and the first angle α1 is equal to the second angle α2. In other words, the first angle α1 corresponds to the incident angle of the light beam from the first light source 30 minus 90 degrees, and the second angle α2 corresponds to the reflection angle of the reflected light from the first light source 30 minus 90 degrees.

[0012] In step S30, as shown in Figures 1A, 3, 5A, 5B, 5C, 6A, 6B, and 6C, the working platform 20 is moved, or the first light source 30, the second light source 40, the first image capturing unit 50, and the second image capturing unit 60 are moved.

[0013] In step S40, as shown in Figures 1A, 3, 4, 5A, 5C, 6B and 6C, the light beam from the first light source 30 is reflected by the tops of the measurement objects 11, 12 and 13, and the first image capture unit 50 captures images of the tops of the measurement objects 11, 12 and 13 through the reflected light from the first light source 30, and the sensor unit 70 detects a first moving distance of the working platform 20 or a first moving distance between the first light source 30 and the first image capture unit 50, where the first moving distances are d1, d2 and d3.

[0014] In step S50, as shown in Figures 1A, 3, 4, 5B, 5C, 6A and 6C, the light beam from the second light source 40 is reflected by the tops of these measurement objects 11, 12 and 13, and the second image capture unit 60 captures images of the tops of these measurement objects 11, 12 and 13 through the reflected light from the second light source 40, and the sensor unit 70 detects a second moving distance of the working platform 20 or a second moving distance between the second light source 40 and the second image capture unit 60, where the second moving distances are D1, D2 and D3.

[0015] In step S61, as shown in FIGS. 1B, 3, and 4, when the first moving distance d1 is equal to the second moving distance D1, the processing unit 80 determines whether the height H1 of the measurement object 11 is equal to the height H of the reference object 10. S and the object 11 to be measured is determined to be a non-defective product.

[0016] In step S62, as shown in FIGS. 1C, 4, and 5A to 5D, if the first moving distance d2 is greater than the second moving distance D2, the processing unit 80 calculates the height H2 of the measurement object 12 as the height H of the reference object 10. S and the measurement object 12 is determined to be a defective product, and ΔH2=(d2-D2)×tan(θ), H2=H s The height H2 of the measurement object 12 is calculated using the formula +ΔH2, where θ is equal to the first angle α1.

[0017] In step S63, as shown in FIGS. 1D, 4, and 6A to 6D, if the first moving distance d3 is smaller than the second moving distance D3, the processing unit 80 calculates the height H3 of the measurement object 13 as the height H of the reference object 10. S and the measurement object 13 is determined to be a defective product, and ΔH3=(D3-d3)×tan(θ), H3=H s The height H3 of the measurement object 13 is calculated using the formula -ΔH3, where θ is equal to the first angle α1.

[0018] In the first embodiment, in step S20, the light beam from the second light source 40 and the reflected light from the second light source 40 overlap with the axis 102 of the reference object 10, as shown in Fig. 2. In step S50, the light beam from the second light source 40 and the reflected light from the second light source 40 overlap with the axes 112, 122, 132 of the measurement objects 11, 12, 13, as shown in Figs. 3, 5B, and 6A.

[0019] When the work platform 20 moves at an accelerated speed, or when the first light source 30, the second light source 40, the first image capture unit 50, and the second image capture unit 60 move at an accelerated speed, the movement speed of the work platform 20 and the movement speeds of the first light source 30, the second light source 40, the first image capture unit 50, and the second image capture unit 60 become unstable, making it impossible for the first image capture unit 50 to clearly capture images of the tops of the objects 11, 12, and 13 due to the reflected light of the first light source 30, and making it impossible for the second image capture unit 60 to clearly capture images of the tops of the objects 11, 12, and 13 due to the reflected light of the second light source 40.

[0020] Preferably, in step S30, the working platform 20 moves at a uniform speed, or the first light source 30, the second light source 40, the first image capturing unit 50 and the second image capturing unit 60 move at a uniform speed.

[0021] Therefore, the movement speeds of the first light source 30, the second light source 40, the first image capture unit 50, and the second image capture unit 60 are very stable, and the first image capture unit 50 can clearly capture images of the tops of the measurement objects 11, 12, and 13 using the reflected light from the first light source 30, and the second image capture unit 60 can clearly capture images of the tops of the measurement objects 11, 12, and 13 using the reflected light from the second light source 40.

[0022] Preferably, the semiconductor microbumps are bond pads, copper posts, metal eutectics, or metal contacts.

[0023] 7 is a schematic diagram of steps S10 and S20 of a second embodiment of the method according to the present invention. The difference between the first and second embodiments is that in step S20, as shown in FIG. 7, the light beam from the second light source 40 forms a third angle α3 with the horizontal plane 90 passing through the top of the reference object 10, and the reflected light from the second light source 40 forms a fourth angle α4 with the horizontal plane 90 passing through the top of the reference object 10, and the third angle α3 is equal to the fourth angle α4. In other words, the third angle α3 corresponds to the angle of incidence of the light beam from the second light source 40 minus 90 degrees, and the fourth angle α4 corresponds to the angle of reflection of the reflected light from the second light source 40 minus 90 degrees. Other than that, the other technical features of the second embodiment are identical to those of the first embodiment.

[0024] FIGS. 8A-8D are a flowchart of a third embodiment of the method according to the present invention. FIGS. 9A and 9B are schematic diagrams of steps S10 and S20 of the third embodiment of the method according to the present invention. FIG. 10 is a schematic diagram of the connection relationship between the first image capture unit 50, the second image capture unit 60, and the processing unit 80 according to the present invention. FIGS. 11A and 11B are schematic diagrams of steps S30, S40, S50, and S61 of the third embodiment of the method according to the present invention. FIGS. 12A-12F are schematic diagrams of steps S30, S40, S50, and S62 of the third embodiment of the method according to the present invention. FIGS. 13A-13F are schematic diagrams of steps S30, S40, S50, and S63 of the third embodiment of the method according to the present invention. The present invention provides a method for measuring the height of semiconductor microbumps, comprising the following steps:

[0025] Specifically, in step S10, as shown in FIGS. 8A and 9A, one reference object 10A and a plurality of measurement objects 11A, 12A, and 13A are placed on the working platform 20. The reference object 10A and the measurement objects 11A, 12A, and 13A are all rectangular in shape, and the height of the reference object 10A is H S A (see Figure 11A), the height of measurement object 11A is H1A (see Figure 11A), the height of measurement object 12A is H2A (see Figure 12F), and the height of measurement object 13A is H3A (see Figure 13F), and reference object 10A and these measurement objects 11A, 12A, and 13A are all semiconductor microbumps.

[0026] In step 20, as shown in Figures 8A, 9A, 9B, and 10, the light beam from the first light source 30 and the light beam from the second light source 40 are simultaneously reflected by the top surface 101 of the reference object 10A, the first image capture unit 50 captures images of the first end 1011 and the second end 1012 on the top surface 101 of the reference object 10A using the reflected light from the first light source 30, the second image capture unit 60 captures images of the first end 1011 and the second end 1012 on the top surface 101 of the reference object 10A using the reflected light from the second light source 40, and the processing unit 80 calculates the midpoint positions 1013, 1013A, and 1013B between the first end 1011 and the second end 1012 on the top surface 101 of the reference object 10A based on the images of the first end 1011 and the second end 1012 on the top surface 101 of the reference object 10A.

[0027] 9B, the light beams of the first light source 30 and the second light source 40 may be irradiated onto the top surface 101 of the reference object 10A along the midpoint L1, with the midpoint 1013 located exactly at the central axis of the reference object 10A. The light beams of the first light source 30 and the second light source 40 may also be irradiated onto the top surface 101 of the reference object 10A along the eccentricity lines L2 and L3, with the midpoints 1013A and 1013B located exactly at the eccentricity of the reference object 10A. The light beams of the first light source 30 and the top surface of the reference object 10A form a first angle α1A, and the reflected light of the first light source 30 and the top surface of the reference object 10A form a second angle α2A, where the first angle α1A is equal to the second angle α2A. In other words, the first angle α1A corresponds to the angle of incidence of the light beam from the first light source 30 minus 90 degrees, and the second angle α2A corresponds to the angle of reflection of the reflected light from the first light source 30 minus 90 degrees.

[0028] In step S30, as shown in Figures 8A, 11A, 12A, 12B, 12C, 12E, 13A, 13B, 13C, and 13E, the work platform 20 is moved, and the first light source 30, the second light source 40, the first image capture unit 50, and the second image capture unit 60 are moved.

[0029] In step S40, as shown in FIGS. 4, 8A, 11A, 11B, 12A to 12E, and 13A to 13E, the light beam from the first light source 30 is reflected by the top surfaces 111, 121, and 131 of the measurement targets 11A, 12A, and 13A, and the first image capture unit 50 captures images of the first ends 1111, 1211, and 1311 and the second ends 1112, 1212, and 1312 of the top surfaces 111, 121, and 131 of the measurement targets 11A, 12A, and 13A using the reflected light from the first light source 30. The processing unit 80 then captures the images of the first ends 1111, 1211, and 1311 and the second ends 1112, 1212, and 1312 of the top surfaces 111, 121, and 131 of the measurement targets 11A, 12A, and 13A. Based on the images of the first ends 1111, 1211, 1311 and the second ends 1112, 1212, 1312, the midpoint positions 1113, 1113A, 1113B, 1213, 1213A, 1213B, 1313, 1313A, 1313B between the first ends 1111, 1211, 1311 and the second ends 1112, 1212, 1312 on the top surfaces of the measurement objects 11A, 12A, 13A are calculated, and the sensor unit 70 detects a first movement distance of the working platform 20 or a first movement distance between the first light source 30 and the first image capture unit 50, and the first movement distance is d1A, d2A, d3A.

[0030] More specifically, as shown in FIG. 11B, the light beams of the first light source 30 and the second light source 40 may be irradiated onto the top surface 111 of the object to be measured 11A along the midpoint L1, in which case the midpoint position 1113 is exactly at the axial position of the object to be measured 11A, and the light beams of the first light source 30 and the second light source 40 may also be irradiated onto the top surface 111 of the object to be measured 11A along the eccentricity lines L2 and L3, in which case the midpoint positions 1113A and 1113B are exactly at the eccentricity positions of the object to be measured 11A.

[0031] More specifically, as shown in FIG. 12D, the light beams of the first light source 30 and the second light source 40 may be irradiated onto the top surface 121 of the object to be measured 12A along the midpoint L1, in which case the midpoint position 1213 is exactly at the axial position of the object to be measured 12A, and the light beams of the first light source 30 and the second light source 40 may also be irradiated onto the top surface 121 of the object to be measured 12A along the eccentricity lines L2 and L3, in which case the midpoint positions 1213A and 1213B are exactly at the eccentricity positions of the object to be measured 12A.

[0032] More specifically, as shown in FIG. 13D, the light beams of the first light source 30 and the second light source 40 may be irradiated onto the top surface 131 of the object to be measured 13A along the midpoint line L1, in which case the midpoint position 1313 is exactly at the axial position of the object to be measured 13A, and the light beams of the first light source 30 and the second light source 40 may also be irradiated onto the top surface 131 of the object to be measured 13A along the eccentricity lines L2 and L3, in which case the midpoint positions 1313A and 1313B are exactly at the eccentric positions of the object to be measured 13A.

[0033] In step S50, as shown in FIGS. 4, 8A, 11A, 11B, 12A to 12E, and 13A to 13E, the light beam from the second light source 40 is reflected by the top surfaces 111, 121, and 131 of the measurement targets 11A, 12A, and 13A, and the second image capture unit 60 captures images of the first ends 1111, 1211, and 1311 and the second ends 1112, 1212, and 1312 of the top surfaces 111, 121, and 131 of the measurement targets 11A, 12A, and 13A using the reflected light from the second light source 40. The processing unit 80 then processes the first ends 1111, 1211, and 1311 of the top surfaces 111, 121, and 131 of the measurement targets 11A, 12A, and 13A. Based on the images of the first ends 1111, 1211, 1311 and the second ends 1112, 1212, 1312, midpoint positions 1113, 1113A, 1113B, 1213, 1213A, 1213B, 1313, 1313A, 1313B between the first ends 1111, 1211, 1311 and the second ends 1112, 1212, 1312 on the top surfaces of the measurement objects 11A, 12A, 13A are calculated, and the sensor unit 70 detects a second movement distance of the working platform 20 or a second movement distance between the second light source 40 and the second image capture unit 60, which are D1A, D2A, D3A.

[0034] In step S61, as shown in FIGS. 4, 8B, 11A, and 11B, when the first moving distance d1A is equal to the second moving distance D1A, the processing unit 80 determines whether the height H1A of the measurement object 11A is equal to the height H of the reference object 10A. S and the object to be measured 11A is determined to be a non-defective product.

[0035] In step S62, as shown in FIGS. 4, 8C, and 12A to 12F, if the first moving distance d2A is greater than the second moving distance D2A, the processing unit 80 calculates the height H2A of the measurement object 12A to be equal to the height H of the reference object 10A. S A, and the measurement object 12A is determined to be defective. In addition, ΔH2A=(d2A-D2A)×tan(θ), H2A=H s The height H2A of the measurement target 12A is calculated using the formula A+ΔH2A, where θ is equal to the first angle α1A.

[0036] In step S63, as shown in FIGS. 4, 8D, and 13A to 13F, if the first movement distance d3A is smaller than the second movement distance D3A, the processing unit 80 determines whether the height H3A of the measurement object 13A is equal to the height H of the reference object 10A. S A, and the measurement object 13A is determined to be defective, ΔH3A=(D3A-d3A)×tan(θ), H3A=H s The height H3A of the measurement target 13A is calculated using the formula A-ΔH3A, where θ is equal to the first angle α1A.

[0037] In the third embodiment, in step S20, the light beam from the second light source 40 and the reflected light from the second light source 40 overlap with the axis 102A of the reference object 10A, as shown in Fig. 9A. In step S50, the light beam from the second light source 40 and the reflected light from the second light source 40 overlap with the axes 112A, 122A, and 132A of the measurement objects 11A, 12A, and 13A, as shown in Figs. 11A, 12C, and 13B.

[0038] FIG. 14 is a schematic diagram of steps S10 and S20 of a fourth embodiment of the method according to the present invention. The difference between the fourth embodiment and the third embodiment is that in step S20, as shown in FIG. 14, the light beam from the second light source 40 and the apex of the reference object 10A form a third angle α3A, and the reflected light from the second light source 40 and the apex of the reference object 10A form a fourth angle α4A, and the third angle α3A is equal to the fourth angle α4A. In other words, the third angle α3A corresponds to the angle of incidence of the light beam from the second light source 40 minus 90 degrees, and the fourth angle α4A corresponds to the angle of reflection of the reflected light from the second light source 40 minus 90 degrees. Other than that, the other technical features of the fourth embodiment are identical to those of the third embodiment.

[0039] As described above, the method of the present invention can accurately measure the heights of these measurement objects 11, 11A, 12, 12A, 13, 13A, and can accurately determine whether there are defects in the measurement objects 11, 11A, 12, 12A, 13, 13A based on the differences in heights H1, H1A, H2, H2A, H3, H3A between the reference objects 10, 10A and these measurement objects 11, 11A, 12, 12A, 13, 13A.

[0040] The above-mentioned are only preferred embodiments for explaining the present invention, and are not intended to limit the present invention in any way, so that any modifications or variations made based on the spirit of the present invention shall fall within the protection scope of the present invention. [Explanation of symbols]

[0041] 10, 10A Referent 101 Top surface 1011 1st end 1012 2nd end 1013, 1013A, 1013B intermediate point position 102, 102A axis 11, 11A, 12, 12A, 13, 13A Measurement target 111, 121, 131 top surface 1111, 1211, 1311 1st end 1112, 1212, 1312 2nd end 1113, 1113A, 1113B, 1213, 1213A, 1213B, 1313, 1313A, 1313B Intermediate position 112, 112A, 122, 122A, 132, 132A Axis 20 Working Platform 30 1st light source 40 Second light source 50 First Image Capture Unit 60 Second Image Capture Unit 70 Sensor Unit 80 processing units d1, d1A, d2, d2A, d3, d3A First movement distance D1, D1A, D2, D2A, D3, D3A Second travel distance H1, H1A, H2, H2A, H3, H3A, H S , H S A Height L1 Median line L2, L3 eccentric wire S10~S63 process α1, α1A 1st angle α2, α2A Second angle α3, α3A 3rd angle α4, α4A 4th angle

Claims

1. A method for measuring the height of a semiconductor microbump, comprising: A reference object and a measurement object are placed on a work platform, and the reference object and the measurement object are both spherical in shape, and the height of the reference object is H S a step in which the height of the measurement object is H, and the reference object and the measurement object are both semiconductor microbumps; simultaneously reflecting a light beam from a first light source and a light beam from a second light source on the top of the reference object, capturing an image of the top of the reference object by the reflected light of the first light source with a first image capture unit, capturing an image of the top of the reference object by the reflected light of the second light source with a second image capture unit, wherein the light beam from the first light source and a horizontal plane passing through the top of the reference object form a first angle, and the reflected light from the first light source and a horizontal plane passing through the top of the reference object form a second angle, and the first angle is equal to the second angle; moving the work platform or moving the first light source, the second light source, the first image capture unit, and the second image capture unit; reflecting the light beam of the first light source on the top of the measurement object, capturing an image of the top of the measurement object by the reflected light of the first light source with the first image capture unit, and detecting a first moving distance of the working platform or a first moving distance between the first light source and the first image capture unit with a sensor unit, wherein the first moving distance is d; reflecting the light beam of the second light source on the top of the measurement object, capturing an image of the top of the measurement object by the reflected light of the second light source with the second image capture unit, and detecting a second moving distance of the working platform or a second moving distance between the second light source and the second image capture unit with the sensor unit, wherein the second moving distance is D; If the first moving distance is equal to the second moving distance, the processing unit determines that the height of the measurement object is equal to the height of the reference object and the measurement object is a non-defective product; if the first moving distance is greater than the second moving distance, the processing unit determines that the height of the measurement object is greater than the height of the reference object and the measurement object is a defective product; and, ΔH=(d−D)×tan(θ), H=H s +ΔH, θ is equal to the first angle; if the first moving distance is smaller than the second moving distance, the processing unit determines that the height of the measurement object is smaller than the height of the reference object and the measurement object is defective; and ΔH=(D-d)×tan(θ), H=H s -ΔH, θ is equal to the first angle, and A method for measuring the height of semiconductor microbumps.

2. The step of simultaneously reflecting the light beam of the first light source and the light beam of the second light source onto the top of the reference object further includes causing the light beam of the second light source and the reflected light of the second light source to overlap with an axis of the reference object; and the step of reflecting the light beam of the second light source onto the top of the measurement object further includes causing the light beam of the second light source and the reflected light of the second light source to overlap with an axis of the measurement object. The method for measuring the height of microbumps according to claim 1 .

3. The step of simultaneously reflecting the light beam of the first light source and the light beam of the second light source onto the top of the reference object further includes forming a third angle between the light beam of the second light source and a horizontal plane passing through the top of the reference object, and forming a fourth angle between the reflected light of the second light source and a horizontal plane passing through the top of the reference object, the third angle being equal to the fourth angle. The method for measuring the height of microbumps according to claim 1 .

4. The step of moving the work platform or moving the first light source, the second light source, the first image capture unit, and the second image capture unit further includes: the first light source, the second light source, the first image capture unit, and the second image capture unit moving at a uniform speed; or the step of moving the work platform at a uniform speed. The method for measuring the height of microbumps according to claim 1 .

5. The method for measuring the height of a microbump according to claim 1 , wherein the semiconductor microbump is a bonding pad, a copper post, a metal eutectic, or a metal contact.

6. A method for measuring the height of a semiconductor microbump, comprising: A reference object and a measurement object are placed on a work platform, and the reference object and the measurement object are both rectangular in shape, and the height of the reference object is H S a step in which the height of the measurement object is H, and the reference object and the measurement object are both semiconductor microbumps; a first image capture unit captures an image of a first end and a second end on the top surface of the reference object by the reflected light of the first light source; a second image capture unit captures an image of the first end and the second end on the top surface of the reference object by the reflected light of the second light source; and a processing unit calculates a midpoint position between the first end and the second end on the top surface of the reference object based on the image of the first end and the second end on the top surface of the reference object, wherein the light of the first light source and the top surface of the reference object form a first angle, and the reflected light of the first light source and the top surface of the reference object form a second angle, and the first angle is equal to the second angle; moving the work platform or moving the first light source, the second light source, the first image capture unit, and the second image capture unit; reflecting the light beam of the first light source onto the top surface of the measurement object, capturing an image of a first end and a second end on the top surface of the measurement object by the reflected light of the first light source with the first image capture unit, calculating a midpoint position between the first end and the second end on the top surface of the measurement object based on the image of the first end and the second end on the top surface of the measurement object with the processing unit, and detecting a first moving distance of the work platform or a first moving distance between the first light source and the first image capture unit with a sensor unit, wherein the first moving distance is d; reflecting the light beam of the second light source onto the top surface of the measurement object, capturing an image of the first end and the second end on the top surface of the measurement object by the reflected light of the second light source with the second image capture unit, calculating the midpoint position between the first end and the second end on the top surface of the measurement object based on the image of the first end and the second end on the top surface of the measurement object with the processing unit, and detecting a second moving distance of the work platform or a second moving distance between the second light source and the second image capture unit with the sensor unit, wherein the second moving distance is D; If the first moving distance is equal to the second moving distance, the processing unit determines that the height of the measurement object is equal to the height of the reference object and the measurement object is a non-defective product; if the first moving distance is greater than the second moving distance, the processing unit determines that the height of the measurement object is greater than the height of the reference object and the measurement object is a defective product; and, ΔH=(d−D)×tan(θ), H=H s +ΔH, θ is equal to the first angle; if the first moving distance is smaller than the second moving distance, the processing unit determines that the height of the measurement object is smaller than the height of the reference object and the measurement object is defective; and, ΔH=(D−d)×tan(θ), H=H s -ΔH, θ is equal to the first angle, and A method for measuring the height of semiconductor microbumps.

7. The step of simultaneously reflecting the light beam of the first light source and the light beam of the second light source onto the top surface of the reference object further includes causing the light beam of the second light source and the reflected light of the second light source to overlap with an axis of the reference object; and the step of reflecting the light beam of the second light source onto the top surface of the measurement object further includes causing the light beam of the second light source and the reflected light of the second light source to overlap with an axis of the measurement object. The method for measuring the height of microbumps according to claim 6.

8. The step of simultaneously reflecting the light beam of the first light source and the light beam of the second light source onto the top surface of the reference object further includes forming a third angle between the light beam of the second light source and the top surface of the reference object, and forming a fourth angle between the reflected light of the second light source and the top surface of the reference object, the third angle being equal to the fourth angle. The method for measuring the height of microbumps according to claim 6.

9. The step of moving the work platform or moving the first light source, the second light source, the first image capture unit, and the second image capture unit further includes: moving the first light source, the second light source, the first image capture unit, and the second image capture unit at a uniform speed; or moving the work platform at a uniform speed. The method for measuring the height of microbumps according to claim 6.

10. The semiconductor microbump is a bonding pad, a copper post, a metal eutectic, or a metal contact. The method for measuring the height of microbumps according to claim 6.

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