Substrate processing apparatus, susceptor, and substrate processing method

Abstract

To provide a substrate processing device and a susceptor that can be used in a previous process of a semiconductor performed under reduced pressure, and can handle large-heat-quantity processes at extremely low temperatures by reducing the thermal resistance between a substrate mounting surface of the susceptor and a substrate.SOLUTION: A substrate processing device 100 comprises: a reduced-pressure container 110; a susceptor 200 which is installed in the reduced-pressure container 110, and has a flat cooling plate 210 and an electrical insulation layer 220 disposed on the cooling plate 210; medium supply means 120 which supplies, to a substrate mounting surface 222 of the electrical insulation layer 220, a medium that undergoes a phase transition from liquid to solid within a predetermined temperature range at or below 0°C; and an electrode or a discharge antenna 130 which is provided at a position facing the substrate mounting surface 222. At least one of the electrode or discharge antenna 130 and the cooling plate 210 is connected to a high-frequency power supply, and the substrate processing device processes a substrate fixed to the substrate mounting surface 222 via the medium.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a substrate processing apparatus, a susceptor used therein, and a substrate processing method. [Background technology]

[0002] In semiconductor manufacturing processes, particularly in pre-processing steps such as dry etching, which are carried out under reduced pressure, it is sometimes necessary to maintain the substrate temperature at extremely low temperatures (below 0°C).In addition, as processes have become increasingly power-intensive in recent years, there is a demand for efficient absorption of the large amount of heat that passes through the substrate.

[0003] Patent Document 1 discloses a workpiece dicing device and a workpiece dicing method that include a liquid that penetrates into uneven portions of the surface, a liquid application means that applies the liquid to the top surface of the workpiece, a freezing means that freezes the workpiece to which the liquid has been applied and solidifies the liquid on the workpiece, a dicing table on which the workpiece is placed, a blade that dices the workpiece while filling the unevenness formed by a low dielectric film or metal film on the workpiece surface with a solidified material, and a solidified material melting means that melts the solidified material on the workpiece after dicing.

[0004] Patent Document 2 discloses an electrostatic chuck device that uses an insulating viscous fluid or a low-hardness gel-like substance for at least a first electrical insulating layer as an insulating layer of the electrostatic chuck. Patent Document 2 further discloses that the exposed surface of the electrical insulating layer is covered with a corrosion-resistant second electrical insulating layer, that a third electrical insulating layer made of a highly insulating material is disposed between the first insulating layer and a metal insulating layer support plate, and that electrodes are embedded inside the first insulating layer and fixed to the lower surface of the second insulating layer or the upper surface of the third insulating layer. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2012-104607 [Patent Document 2] Japanese Patent Application Laid-Open No. 2003-60020 Summary of the Invention [Problem to be solved by the invention]

[0006] To remove a large amount of heat from a susceptor with a cooling plate placed below the substrate while maintaining the substrate at a constant temperature, methods have been studied to reduce the thermal resistance between the susceptor and the cooling plate, and between the coolant and the coolant flow passages in the cooling plate. For example, the thermal resistance between the susceptor and the cooling plate has been reduced by integrating them with a highly thermally conductive adhesive, and the thermal resistance between the coolant flow passages has been reduced by adjusting the shape and pattern of the coolant flow passage, the type of coolant, the temperature, and the flow rate.

[0007] However, with regard to the thermal resistance between the substrate and the susceptor, although measures have been taken to increase heat transfer by applying an adhesive force between the substrate and the susceptor or by interposing a gas between the substrate and the susceptor, there are limits to how much the thermal resistance can be reduced because the substrate is simply in close contact with the substrate mounting surface of the susceptor.

[0008] The present invention has been made in consideration of the above circumstances, and aims to provide a substrate processing apparatus and susceptor that can be used in semiconductor pre-processing performed under reduced pressure, and that can handle large heat processes at extremely low temperatures by reducing the thermal resistance between the substrate mounting surface of the susceptor and the substrate. [Means for solving the problem]

[0009] (1) In order to achieve the above object, the present invention provides the following means: That is, a substrate processing apparatus according to an application example of the present invention includes a reduced pressure vessel, a susceptor installed within the reduced pressure vessel and having a flat cooling plate and an electrical insulating layer disposed on the cooling plate, medium supply means for supplying a medium that undergoes a phase transition from liquid to solid within a predetermined temperature range of 0°C or less to a substrate mounting surface of the electrical insulating layer, and an electrode or a discharge antenna disposed opposite the substrate mounting surface, wherein at least one of the electrode or the discharge antenna and the cooling plate is connected to a high-frequency power source, and wherein a substrate fixed to the substrate mounting surface is processed via the medium. The susceptor has an exhaust hole that opens to the substrate mounting surface and that sucks the medium or adsorbs the substrate.

[0010] In this way, by solidly bonding the substrate to the susceptor's substrate-mounting surface, the thermal resistance between the substrate and susceptor can be reduced, even in processes using high-frequency power sources, and a large amount of heat can be transferred to the susceptor while maintaining the substrate temperature below a certain level. Furthermore, because the medium on which the substrate is mounted is in a liquid state, self-alignment by the medium (flatness correction by meniscus force) can be expected. Furthermore, in processes inside a reduced-pressure vessel, it becomes possible to mount, fix, and flatten the substrate without the need for conventional electrostatic or vacuum suction functions.

[0011] (2) In the substrate processing apparatus of the application example of (1) above, the medium is water or a mixture of water and alcohol, which makes it easy to maintain an extremely low temperature of 0°C or below.

[0012] (3) In the substrate processing apparatus according to the application example of (1) or (2), the medium supply means is a medium supply hole provided in the susceptor and opening to the substrate mounting surface. By providing the medium supply means on the susceptor side in this way, the configuration of the substrate processing apparatus can be simplified.

[0013] (4) Also, (1) above ofIn the substrate processing apparatus of the application example, the susceptor is characterized by having an exhaust hole that opens to the substrate mounting surface and sucks the medium or adsorbs the substrate. This allows the medium between the substrate and the substrate mounting surface to be made thinner, further reducing thermal resistance during substrate processing. It is also possible to adsorb warped substrates.

[0014] (5) In the substrate processing apparatus according to any one of the application examples (1) to (4) above, the electrically insulating layer is characterized in that at least a portion of the substrate mounting surface is formed of a porous material, thereby further simplifying the medium supply means provided on the susceptor side.

[0015] (6) In the substrate processing apparatus according to any one of the application examples (1) to (5) above, the cooling plate is made of metal, ceramics, or a composite material thereof, which makes it easy to provide structures such as a coolant flow path, a medium supply hole, and an exhaust hole inside the cooling plate.

[0016] (7) In the substrate processing apparatus according to any one of the application examples (1) to (6) above, the electrical insulating layer is made of a ceramic sprayed film, a ceramic sintered body, or an organic film, which allows for the formation of a dense electrical insulating layer and reduces thermal resistance.

[0017] (8) In addition, in the substrate processing apparatus according to any one of the application examples (1) to (7) above, a bonding layer is provided between the cooling plate and the electrical insulating layer, and the cooling plate and the electrical insulating layer are bonded via the bonding layer. This allows the bonding layer to be provided according to the difference in CTE between the cooling plate and the electrical insulating layer, thereby reducing the thermal resistance between the cooling plate and the electrical insulating layer and improving the reliability of the bond even when the difference in CTE between the cooling plate and the electrical insulating layer is large.

[0018] (9) In the substrate processing apparatus according to any one of the application examples (1) to (8) above, the susceptor is characterized by including a heater, which facilitates melting the medium that has undergone a phase transition after the process is completed, and facilitates the removal and transportation of the substrate from the substrate mounting surface of the susceptor.

[0019] (10) In addition, in the substrate processing apparatus according to any one of the application examples (1) to (9), the substrate processing apparatus is characterized in that the substrate processing apparatus is a dry etching apparatus. The substrate processing apparatus of the present invention is suitable for a dry etching apparatus because it can transfer a large amount of heat to the susceptor side while maintaining the temperature of the substrate below a certain temperature.

[0020] (11) Furthermore, a susceptor according to an application example of the present invention comprises a flat cooling plate connected to a high-frequency power supply or ground, and an electrically insulating layer disposed on the cooling plate and having the substrate mounting surface, and is characterized in that it is used in the substrate processing apparatus according to the application example of (1) above.

[0021] In this way, by solidly bonding the substrate to the susceptor's substrate-mounting surface, the thermal resistance between the substrate and susceptor can be reduced, even in processes using high-frequency power sources, and a large amount of heat can be transferred to the susceptor while maintaining the substrate temperature below a certain level. Furthermore, because the medium on which the substrate is mounted is in a liquid state, self-alignment by the medium (flatness correction by meniscus force) can be expected. Furthermore, in processes inside a reduced-pressure vessel, it becomes possible to mount, fix, and flatten the substrate without the need for conventional electrostatic or vacuum suction functions.

[0022] (12) In the susceptor of the application example of (11) above, a medium supply hole is provided in the substrate mounting surface for supplying the medium. By providing the medium supply means on the susceptor side in this way, the configuration of the substrate processing apparatus can be simplified.

[0023] (13) In addition, the susceptor according to the application example of (11) or (12) above is characterized by having an exhaust hole that opens to the substrate mounting surface and sucks the medium or adsorbs the substrate. This allows the medium between the substrate and the substrate mounting surface to be made thinner, further reducing thermal resistance during substrate processing. It is also possible to adsorb warped substrates.

[0024] (14) In the susceptor of any of the application examples (11) to (13) above, the electrical insulating layer is characterized in that at least a portion of the substrate mounting surface is formed of a porous material, thereby further simplifying the medium supply means provided on the susceptor side.

[0025] (15) In the susceptor of any of the application examples (11) to (14) above, the cooling plate is made of metal, ceramics, or a composite material thereof, which makes it easy to provide structures such as a coolant flow path, a medium supply hole, and an exhaust hole inside the cooling plate.

[0026] (16) In the susceptor of any of the application examples (11) to (15) above, the electrical insulating layer is made of a ceramic sprayed film, a ceramic sintered body, or an organic film, which allows for the formation of a dense electrical insulating layer and reduces thermal resistance.

[0027] (17) In addition, in the susceptor of any of the application examples (11) to (16) above, a bonding layer is provided between the cooling plate and the electrical insulating layer, and the cooling plate and the electrical insulating layer are bonded via the bonding layer. This allows the bonding layer to be provided according to the difference in CTE between the cooling plate and the electrical insulating layer, making it possible to reduce the thermal resistance between the cooling plate and the electrical insulating layer and to increase the reliability of the bond even when the difference in CTE between the cooling plate and the electrical insulating layer is large.

[0028] (18) The susceptor of any of the application examples (11) to (17) above is characterized by further comprising a heater, which makes it easier to melt the medium that has undergone phase transition after the process is completed, and makes it easier to remove and transport the substrate from the substrate mounting surface of the susceptor.

[0029] (19) A substrate processing method according to an application example of the present invention includes the steps of: supplying a medium that undergoes a phase transition from liquid to solid within a predetermined temperature range of 0°C or less onto a substrate mounting surface of a susceptor in a reduced pressure vessel; placing a substrate on the substrate mounting surface to which the medium has been supplied; cooling the substrate mounting surface to a temperature below the predetermined temperature range, causing a phase transition of the medium, and fixing the substrate to the substrate mounting surface via the medium; reducing the pressure of the reduced pressure vessel; and processing the substrate. The susceptor has an exhaust hole that opens to the substrate mounting surface and sucks the medium or adsorbs the substrate. It is characterized by the following.

[0030] In this way, by solidly bonding the substrate to the susceptor's substrate-mounting surface, the thermal resistance between the substrate and susceptor can be reduced, and a large amount of heat can be transferred to the susceptor while maintaining the substrate temperature below a certain level. Furthermore, because the substrate is mounted on a liquid medium, self-alignment (flatness correction by meniscus force) can be expected. Furthermore, in processes inside a reduced-pressure vessel, it becomes possible to mount, fix, and flatten the substrate without the need for conventional electrostatic or vacuum suction functions. [Effects of the Invention]

[0031] The substrate processing apparatus, susceptor, and substrate processing method of the present invention can reduce the thermal resistance between the substrate and susceptor, and can transfer a large amount of heat to the susceptor while maintaining the substrate temperature at or below a certain temperature. Furthermore, because the substrate is placed on a liquid medium, self-alignment by the medium (flatness correction by meniscus force) can be expected. Furthermore, in processes within a reduced-pressure vessel, it is possible to place, fix, and flatten a substrate without the need for conventional electrostatic or vacuum suction functions. [Brief explanation of the drawings]

[0032] [Figure 1] 1 is a schematic cross-sectional view showing an example of a substrate processing apparatus according to an embodiment of the present invention. [Figure 2] FIG. 10 is a schematic cross-sectional view showing a modified example of the substrate processing apparatus according to the embodiment of the present invention. [Figure 3] FIG. 2 is a schematic cross-sectional view showing an example of a susceptor according to an embodiment of the present invention. [Figure 4] FIG. 10 is a schematic cross-sectional view showing a modified example of a susceptor according to an embodiment of the present invention. [Figure 5] FIG. 10 is a schematic cross-sectional view showing a modified example of a susceptor according to an embodiment of the present invention. [Figure 6] FIG. 10 is a schematic cross-sectional view showing a modified example of a susceptor according to an embodiment of the present invention. [Figure 7] 1 is a flowchart showing an example of a substrate processing method according to the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0033] Next, an embodiment of the present invention will be described with reference to the drawings. To facilitate understanding of the description, the same reference numerals are used to designate the same components in the drawings, and duplicated descriptions will be omitted. Note that in the configuration diagrams, the size of each component is shown conceptually and does not necessarily represent the actual dimensional ratio.

[0034] [Embodiment] (Configuration of substrate processing apparatus) A substrate processing apparatus according to an embodiment of the present invention will be described with reference to Fig. 1. Fig. 1 is a schematic cross-sectional view showing an example of a substrate processing apparatus according to an embodiment of the present invention. The substrate processing apparatus 100 according to the embodiment of the present invention includes a reduced pressure vessel 110, a medium supply means 120, an electrode or discharge antenna 130, and a susceptor 200.

[0035] The reduced pressure vessel 110 is a general reduced pressure vessel that constitutes a plasma etching, CVD, sputtering apparatus, etc. The reduced pressure vessel 110 includes a chamber 112, an exhaust device 114, and a gas supply system .

[0036] The chamber 112 is a sealable container that maintains a pressure difference with the outside. The chamber 112 has feedthroughs for high frequency power, grounding, other electrical connections, exhaust, gas supply, medium supply, and the like.

[0037] The exhaust device 114 exhausts gas from the chamber 112 to reduce the pressure. The exhaust device 114 also supplies purge gas into the chamber 112 to restore the air pressure inside the chamber 112. The exhaust device 114 can also exhaust liquid. The exhaust device 114 is connected to the inside of the chamber 112 via a feedthrough.

[0038] The gas supply system 116 supplies gases for plasma etching, CVD, sputtering, etc. The gas supply system 116 is connected to the inside of the chamber 112 via a feedthrough. The configuration of the gas supply system 116 varies depending on the configuration of the substrate processing apparatus 100, but for example, a shower head for gas supply may be provided.

[0039] The medium supplying means 120 supplies a medium that undergoes a phase transition from liquid to solid within a predetermined temperature range below 0°C to a substrate mounting surface 222 of an electrical insulating layer 220 of the susceptor 200 (described later). The medium supplying means 120 can be configured, for example, as a mechanism that sprays or drips the medium onto the substrate mounting surface 222 of the susceptor 200. The medium supplying means 120 is connected to a medium supply device 122 provided outside the chamber 112 via a feedthrough. The number of medium supplying means 120 may be one or two or more depending on the design of the substrate processing apparatus 100.

[0040] The medium can be water, a monohydric to trihydric alcohol, or a mixture thereof, or any other medium with a phase transition temperature (freezing point temperature) of 0°C or lower. The medium is preferably water or a mixture of water and alcohol. This makes it easier to maintain an extremely low temperature of 0°C or lower. Furthermore, if the water contains a certain amount of alcohol, the effects of corrosion can be suppressed even if the cooling plate 210 is made of an Al alloy. Ultrapure water is preferably used as the water. Examples of alcohol that can be used include ethanol as a monohydric alcohol, ethylene glycol as a dihydric alcohol, and glycerin as a trihydric alcohol. In addition to the above, the medium can also be a solution of water and calcium chloride, or compounds such as amines and ketones.

[0041] The electrode or discharge antenna 130 is connected to a high-frequency power source or ground external to the substrate processing apparatus 100 via a feedthrough. The electrode or discharge antenna 130 can be shaped in accordance with the design of the substrate processing apparatus 100. The electrode or discharge antenna 130 is preferably made of metal or conductive ceramics, or a metal or conductive ceramics whose surface is covered with an electrically insulating layer.

[0042] 2 is a schematic cross-sectional view showing a modified example of the substrate processing apparatus according to the embodiment of the present invention. As shown in FIG. 2, the medium supply means 120 is preferably a medium supply hole 224 provided in the susceptor 200 and opening to the substrate mounting surface 222. This simplifies the configuration of the substrate processing apparatus 100. Details will be described later.

[0043] The substrate processing apparatus 100 is preferably a dry etching apparatus. The substrate processing apparatus 100 of the present invention is suitable for a highly directional dry etching process because it can transfer a large amount of heat to the susceptor 200 while maintaining the temperature of the substrate at a certain temperature or lower, for example, 0°C or lower.

[0044] (Susceptor configuration) A susceptor according to an embodiment of the present invention will be described with reference to Fig. 3. Fig. 3 is a schematic cross-sectional view showing an example of a susceptor according to an embodiment of the present invention. The susceptor 200 according to the embodiment of the present invention includes a cooling plate 210 and an electrical insulating layer 220. The susceptor 200 according to the embodiment of the present invention is used in the substrate processing apparatus 100 described above.

[0045] The cooling plate 210 is connected to a high-frequency power supply or ground external to the substrate processing apparatus 100 via a feedthrough. At least one of the electrode or discharge antenna 130 and the cooling plate 210 is connected to the high-frequency power supply. This allows processes such as plasma etching, CVD, and sputtering to be performed. Both the electrode or discharge antenna 130 and the cooling plate 210 may be connected to the high-frequency power supply.

[0046] The cooling plate 210 is preferably made of metal, ceramic, or a composite of these materials, which makes it easy to provide structures such as a refrigerant flow path 212, a medium flow path 214 communicating with a medium supply hole 224 (described later), and an exhaust flow path 216 communicating with an exhaust hole 226 (described later) inside the cooling plate 210.

[0047] When the cooling plate 210 is made of ceramic, the material is preferably a ceramic sintered body primarily composed of SiC or AlN. "SiC-based" refers to a ceramic sintered body containing 50 wt% or more of SiC, or a ceramic sintered body containing SiC and having a thermal conductivity of 70 W / mK or higher. "AlN-based" refers to a ceramic sintered body containing 50 wt% or more of AlN. These materials reduce the difference in CTE between the cooling plate 210 and the electrical insulating layer 220 placed on its upper surface, thereby suppressing peeling or warping between the cooling plate 210 and the electrical insulating layer 220 even with large heat inputs from the process, resulting in a stable structure. Furthermore, SiC allows the use of an aqueous medium as a coolant. Aqueous mediums have a high heat transfer coefficient and are suitable for absorbing large amounts of heat. The cooling plate 210 may have various shapes, such as a substantially cylindrical shape, a polygonal column, or an elliptical column, depending on the shape of the substrate-mounting surface 222 of the electrical insulating layer 220.

[0048] The cooling plate 210 preferably has a coolant flow path 212 therein, which allows heat to be absorbed from the substrate by the coolant in the coolant flow path 212. The cooling function of the cooling plate 210 may be achieved by a method other than the coolant.

[0049] When the cooling plate 210 includes the refrigerant flow path 212, the refrigerant flow path 212 may be formed in a tubular shape. In this case, the width of the refrigerant flow path 212 is preferably 1 mm or more and 60 mm or less. The cross-sectional shape of the refrigerant flow path 212 is not limited to a rectangle, and may be any manufacturable shape, such as a circle, an ellipse, a semicircle, or a stepped shape. The refrigerant flow path 212 preferably uses a system that circulates a low-temperature chiller. Therefore, the refrigerant flow path 212 preferably has an inlet for introducing the chiller and an outlet for discharging the chiller. In this case, the refrigerant flow path 212 is connected to a chiller unit 240 provided outside the chamber 112 via a feedthrough.

[0050] The shape of the refrigerant flow path 212, when viewed from above through the cooling plate 210, may include a substantially circular or spiral shape centered at the center of the cooling plate 210. A substantially circular shape includes a shape in which some of the arcs of the circular ring are not connected, and a normal circular ring. A substantially spiral shape includes a shape in which the circumferential arc shapes are connected with their curvature changing in the radial direction with the center of the cooling plate 210 as the base.

[0051] The refrigerant flow paths 212 may be arranged concentrically around the center of the cooling plate 210 when viewed see-through from above. The concentrically arranged, approximately annular refrigerant flow paths 212 may be double, triple, or more. The concentrically arranged, approximately annular refrigerant flow paths 212 may be connected inside the cooling plate 210, or each may be formed with an inlet and an outlet.

[0052] When the cooling plate 210 is made of a sintered ceramic body, the width of the gap between adjacent refrigerant flow paths 212 (the width of the cooling plate 210 existing in the gap between adjacent refrigerant flow paths 212) is preferably 2 mm or more. Furthermore, the width of the gap between adjacent refrigerant flow paths 212 is preferably 25% or more of the width of the refrigerant flow path 212. This makes it possible to maintain the strength of the cooling plate 210 even when the refrigerant flow paths 212 are formed inside the cooling plate 210.

[0053] The refrigerant flow path 212 may include a linear shape. Alternatively, a substantially annular refrigerant flow path 212 may be combined with a linear refrigerant flow path 212. The substantially annular refrigerant flow path 212 and the linear refrigerant flow path 212 may be in communication with each other.

[0054] The electrical insulating layer 220 is disposed on the cooling plate 210 and has a substrate mounting surface 222. A substrate is placed on the substrate mounting surface 222.

[0055] The electrical insulating layer 220 is preferably made of a ceramic sprayed film, a ceramic sintered body, or an organic film, which allows for the formation of a dense electrical insulating layer 220 and reduces thermal resistance.

[0056] When the electrical insulating layer 220 is formed of a ceramic sprayed film or a ceramic sintered body, the material is preferably a ceramic containing Al2O3 or AlN as the main component. "Mainly containing" means containing 50 wt% or more of AlN. When the electrical insulating layer 220 is formed of an organic film, the material is preferably a fluororesin such as PTFE (Poly Tetra Fluoro Ethylene) or polyimide.

[0057] When the electrical insulating layer 220 is formed of a ceramic sprayed film, the thickness of the electrical insulating layer 220 is preferably 0.1 mm or more and 2 mm or less. When the electrical insulating layer 220 is formed of a ceramic sintered body, the thickness of the electrical insulating layer 220 is preferably 0.1 mm or more and 5 mm or less. When the electrical insulating layer 220 is formed of an organic film, the thickness of the electrical insulating layer 220 is preferably 0.05 mm or more and 1 mm or less.

[0058] The electrical insulating layer 220 preferably has exhaust holes 226 that open to the substrate mounting surface 222 and suck in a medium or adsorb a substrate. This allows the medium between the substrate and the substrate mounting surface 222 to be thinner, thereby reducing thermal resistance during substrate processing. It is also possible to adsorb a warped substrate. The exhaust holes 226 are connected to an exhaust device 114 provided outside the chamber 112 via a feedthrough. The exhaust holes 226 may be connected to an exhaust flow path 216 formed in the cooling plate 210 and connected to the exhaust device 114 via a feedthrough. The number of exhaust holes 226 may be one, two, or more, depending on the design of the substrate processing apparatus 100.

[0059] The heat transferred to the susceptor 200 is thermally conducted within the susceptor 200. Therefore, the thermal conductivity of the cooling plate 210 is preferably 25 W / mK or more in the case of a ceramic sintered body, more preferably 70 W / mK or more, and even more preferably 100 W / mK or more. Furthermore, the thermal conductivity of the electrical insulating layer 220 is preferably 4 W / mK or more in the case of a ceramic sprayed film. In the case of a ceramic sintered body, the thermal conductivity is preferably 25 W / mK or more, more preferably 70 W / mK or more, and even more preferably 100 W / mK or more. In the case of an organic film, the thermal conductivity is preferably 0.1 W / mK or more.

[0060] FIG. 4 is a schematic cross-sectional view showing a modified example of a susceptor according to an embodiment of the present invention. As shown in FIG. 4, the electrical insulation layer 220 preferably has a medium supply hole 224 that opens to a substrate mounting surface 222 and supplies a medium. When a susceptor 200 having this configuration is used in a substrate processing apparatus 100, the medium supply hole 224 corresponds to the medium supply means 120 of the substrate processing apparatus 100. This simplifies the configuration of the substrate processing apparatus 100. The medium supply hole 224 is connected to a medium supply device 122 provided outside the chamber 112 via a feedthrough. The medium supply hole 224 may be connected to a medium flow path 214 formed in the cooling plate 210 and to the medium supply device 122 via a feedthrough. The number of medium supply holes 224 may be one or more depending on the design of the substrate processing apparatus 100.

[0061] 4, it is preferable that a bonding layer 230 is provided between the cooling plate 210 and the electrical insulating layer 220, and the cooling plate 210 and the electrical insulating layer 220 are bonded via the bonding layer 230. This allows the bonding layer 230 to be provided according to the difference in CTE between the cooling plate 210 and the electrical insulating layer 220, making it possible to reduce the thermal resistance between the cooling plate and the electrical insulating layer, and to increase the reliability of the bond even when the difference in CTE between the cooling plate 210 and the electrical insulating layer 220 is large. In addition, this increases the degree of freedom in selecting the materials for the cooling plate 210 and the electrical insulating layer 220.

[0062] The bonding layer 230 is preferably formed of a brazing material containing a metal such as In, Al, or Au, or an inorganic or organic adhesive. When an adhesive is used, it is preferable that a filler be added to the adhesive to enhance thermal conductivity. The thermal conductivity of the bonding layer 230 is preferably 0.4 W / mK or higher. The elongation of the bonding layer 230 is preferably 100% or higher. The thickness of the bonding layer 230 is preferably 100 μm or less, more preferably 70 μm or less, and even more preferably 50 μm or less. This allows for a large amount of heat to be transferred. If the thickness is greater than 100 μm, the thermal resistance of the bonding layer 230 may become significant even when a highly thermally conductive metal or adhesive is used. The lower limit of the thickness of the bonding layer 230 can be, for example, 10 μm or more. If the thickness is thinner than this, it becomes difficult to control the thickness.

[0063] 5 is a schematic cross-sectional view showing a modified example of a susceptor according to an embodiment of the present invention. As shown in FIG. 5, it is preferable that at least a portion of the substrate mounting surface 222 of the electrical insulating layer 220 is formed of a porous body 228. This further simplifies the medium supply means 120 provided on the susceptor 200 side. The porous body 228 has communication holes of a size that allows the liquid medium to easily pass through, and the openings of the communication holes on the substrate mounting surface 222 side become medium supply holes 224. This allows the entire surface of the substrate mounting surface 222 to be wetted with the liquid medium.

[0064] Fig. 6 is a schematic cross-sectional view showing a modified example of a susceptor according to an embodiment of the present invention. As shown in Fig. 6, the susceptor 200 preferably further includes a heater 250. This makes it easier to melt the medium that has undergone phase transition after the process is completed, and makes it easier to remove and transport the substrate from the substrate mounting surface 222 of the susceptor 200. Note that terminals and terminal holes are omitted from the susceptor 200 in Fig. 6.

[0065] The heater 250 may be embedded in the electrical insulation layer 220, or may be disposed between the cooling plate 210 and the electrical insulation layer 220, or may be embedded in the cooling plate 210. When the heater 250 is disposed between the cooling plate 210 and the electrical insulation layer 220, the heater 250 is disposed in an electrically insulated state. In this case, it is preferable that a bonding layer 230 is provided between the cooling plate 210 and the heater 250, and between the heater 250 and the electrical insulation layer 220, for bonding. The heater 250 can have a shape according to the design of the substrate processing apparatus 100 or the susceptor 200. The heater 250 is preferably made of W, Mo, or an alloy containing these as its main components.

[0066] The susceptor 200 may be provided with terminals, terminal holes, and lift pin holes as required.

[0067] The electrical insulating layer 220 made of a ceramic sprayed film can be formed directly on the cooling plate 210, and since there is no bonding layer 230, it is possible to reduce the thermal resistance between the cooling plate 210 and the electrical insulating layer 220. A suitable example of such a combination is a susceptor 200 including a cooling plate 210 made of an Al alloy and an electrical insulating layer 220 made of an Al2O3 sprayed film formed by APS spraying.

[0068] The electrical insulating layer 220 made of a ceramic sintered body can be made of a material having a small difference in CTE from the cooling plate 210 using a ceramic sintered body and a high thermal conductivity, and in such a case, the thermal resistance between the cooling plate 210 and the electrical insulating layer 220 can be reduced. As such a combination, for example, a susceptor 200 in which the cooling plate 210 made of a SiC ceramic sintered body and the electrical insulating layer 220 made of an Al2O3 ceramic sintered body are bonded together with an In bonding layer 230 is suitable. Furthermore, when the difference in CTE between the electrical insulating layer 220 made of a ceramic sintered body and the cooling plate 210 using a ceramic sintered body is sufficiently small, they may be bonded together by direct bonding.

[0069] The electrical insulating layer 220 made of a ceramic sintered body can easily incorporate a heater 250 inside the electrical insulating layer 220, making it possible to configure a susceptor 200 equipped with a heater 250. A suitable example of such a combination is a susceptor 200 in which a cooling plate 210 made of a SiC ceramic sintered body and an electrical insulating layer 220 made of an AlN ceramic sintered body and having a heater 250 incorporated therein are joined together by an In bonding layer 230.

[0070] Since the electrical insulating layer 220 made of a sintered ceramic body can easily have a porous body in part, it is possible to configure the susceptor 200 with porous bodies as medium supply holes. As such a combination, for example, a susceptor 200 in which a cooling plate 210 made of a sintered SiC ceramic body and an electrical insulating layer 220 in which a porous sintered ceramic body is formed on the upper surface of the sintered ceramic body and bonded together with a bonding layer 230 made of In is suitable.

[0071] [Substrate processing method] Next, an example of the substrate processing method of the present invention will be described. FIG. 7 is a flowchart showing an example of the substrate processing method of the present invention. In the substrate processing method of the present invention, as a preparation step, an electrode, a discharge antenna, or a susceptor provided in a position opposite the substrate mounting surface is connected to a high-frequency power supply or ground. The connection to the high-frequency power supply or ground may be made at any stage before substrate processing. Next, a medium that undergoes a phase transition from liquid to solid within a predetermined temperature range of 0°C or less is supplied onto the substrate mounting surface of the susceptor in the reduced pressure vessel (step S1). The medium is supplied by a medium supply means. The medium is preferably water or a mixture of water and alcohol.

[0072] Next, the substrate is placed on the substrate placement surface to which the medium has been supplied (step S2). In this way, the substrate is placed on the medium in a liquid state, so self-alignment by the medium (flatness correction by meniscus force) can be expected. From the viewpoint of thermal resistance, it is preferable that the thickness of the medium after the substrate is placed is thin, for example, 10 μm or less. Therefore, in order to thin the thickness of the medium, a step of adjusting the medium supply amount according to the area of ​​the substrate, etc., may be provided.

[0073] Furthermore, in a configuration in which exhaust holes are provided on the substrate mounting surface of the susceptor, it is preferable to include a step of sucking the medium or adsorbing the substrate after step S2. This allows the medium between the substrate and the substrate mounting surface to be thinner, further reducing the thermal resistance during substrate processing. It is also possible to adsorb warped substrates.

[0074] Next, the substrate mounting surface is cooled to below a predetermined temperature range, causing the medium to undergo a phase transition, and the substrate is fixed to the substrate mounting surface via the medium (step S3). Next, the reduced pressure container is depressurized (step S4). Steps S3 and S4 may be performed in either order, or simultaneously. This causes the medium on the substrate mounting surface to solidify (undergo a phase transition), and the susceptor and substrate become one body. Therefore, in processes within the reduced pressure container, it is possible to mount, fix, and correct the flatness of the substrate without the need for conventional electrostatic or vacuum suction functions.

[0075] In this case, the heat transfer between the substrate and susceptor is governed by the thermal conduction of the solidified material. Therefore, the thermal resistance between the substrate and susceptor can be reduced compared to conventional heat transfer through simple contact or gas heat transfer between the substrate and susceptor. As a result, even if a large amount of heat passes through, the temperature difference between the coolant temperature and the substrate can be reduced, making it possible to maintain the substrate temperature below a certain temperature. For example, when water is used as the medium, it can be maintained at an extremely low temperature below 0°C.

[0076] The substrate is then processed (step S5). This allows the process to be performed while the substrate temperature is stably maintained at an extremely low temperature. Furthermore, the self-alignment by the medium allows the process to be performed on a substrate with high flatness.

[0077] After the process is completed, the medium is melted to remove the substrate from the substrate mounting surface of the susceptor. If the susceptor is equipped with a heater, it is preferable to melt the medium using the heater. This makes it easier to remove the substrate from the substrate mounting surface of the susceptor.

[0078] This substrate processing method reduces the thermal resistance between the substrate and the susceptor, and allows a large amount of heat to be transferred to the susceptor while maintaining the substrate temperature below a certain level. Furthermore, it allows processing of substrates with high flatness.

[0079] [Susceptor manufacturing method] Next, an example of a method for manufacturing a susceptor according to an embodiment of the present invention will be described. In the following, a method for manufacturing a susceptor in which the cooling plate is made of a sintered SiC ceramic and the electrical insulating layer is made of a sintered AlN ceramic will be described.

[0080] (Cooling plate manufacturing method) The cooling plate of the susceptor according to the embodiment of the present invention is fabricated, for example, by a molded body hot pressing method described below. Note that the manufacturing method of the cooling plate is not limited to this method, and may be, for example, a powder hot pressing method or a conventional green sheet lamination method. The powder hot pressing method is a method in which ceramic raw material powder and predetermined heating resistors and electrodes are alternately stacked to embed the heating resistors and electrodes inside the ceramic, and then the resultant is uniaxial hot press fired.

[0081] The manufacturing method of the cooling plate of a susceptor according to an embodiment of the present invention using a molded body hot pressing method includes a ceramic molded body forming process, a ceramic degreased body producing process, a firing process, a ceramic sintered body processing process, a cooling plate precursor joining process, and a cooling plate processing process.

[0082] In the ceramic green body forming process, for example, multiple ceramic green bodies are formed from ceramic raw material powder containing silicon carbide (SiC) as the main component. Sintering aids may be added as needed. For example, sintering aids such as B4C and C, binders, plasticizers, dispersants, and other additives are appropriately added to and mixed with SiC ceramic raw material powder to prepare a slurry, which is then granulated by a method such as spray drying. The granulated powder is then pressure-molded to form multiple ceramic green bodies.

[0083] The SiC ceramic raw material powder is preferably highly pure, preferably 99% or more, more preferably 99.9% or more, and preferably has an average particle size of 0.1 μm to 1.0 μm.

[0084] The mixing method may be either wet or dry, and a mixer such as a ball mill or a vibration mill may be used. The molding method may be a known method such as uniaxial pressing or cold isostatic pressing (CIP). The method for forming the ceramic compact is not limited to pressure molding; for example, green sheet lamination or slip casting may also be used. The ceramic compact can be manufactured by appropriately degreasing or further calcining the resulting product.

[0085] After molding, the ceramic molded body may be machined to adjust the shape of the molded body. The machining may be performed after degreasing.

[0086] In the ceramic degreased body production process, multiple ceramic molded bodies are degreased at a predetermined temperature or higher for a predetermined time or longer to produce multiple ceramic degreased bodies. The ceramic molded bodies are heat-treated, for example, at a temperature of 500°C to 900°C to produce ceramic degreased bodies. The degreasing time is preferably 1 hour to 120 hours. An atmospheric or nitrogen atmosphere furnace can be used for degreasing, but an atmospheric furnace is preferred to remove organic components from the binder.

[0087] In the firing process, the formed ceramic degreased body is subjected to uniaxial pressure firing or atmospheric pressure firing to form multiple ceramic sintered bodies. When uniaxial pressure firing is performed, the pressure is preferably 4 MPa or more. The firing temperature is preferably 2000°C or more and 2200°C or less. The firing time is preferably 1 hour or more and 12 hours or less, and more preferably 1 hour or more and 5 hours or less. The firing atmosphere is, for example, a nitrogen or inert gas atmosphere, but may also be a vacuum atmosphere. Alternatively, the vacuum atmosphere may be followed by an inert gas atmosphere. As a result, the multiple ceramic degreased bodies are sintered individually to form multiple SiC ceramic sintered bodies.

[0088] In the ceramic sintered body processing step, one or more SiC ceramic sintered bodies are processed as required to form one or more cooling plate precursors. Examples of the multiple cooling plate precursors include a cooling plate precursor that serves as a lid for the refrigerant flow path, a cooling plate precursor in which part of the refrigerant flow path is formed, and so on. For example, grooves that will become the refrigerant flow path after bonding are formed in one or more SiC ceramic sintered bodies. At this time, the refrigerant flow path may be formed by covering a groove formed in one cooling plate precursor with another cooling plate precursor (SiC ceramic sintered body). Alternatively, the refrigerant flow path may be formed by combining grooves formed in two cooling plate precursors. Using this method, refrigerant flow paths of various shapes can be formed.

[0089] In the cooling plate precursor bonding step, a plurality of cooling plate precursors are bonded together to produce a cooling plate. Bonding can be performed using either a bonding method that uses a bonding material or a bonding method that does not use a bonding material.

[0090] First, a bonding method using a bonding material will be described. First, a bonding material is prepared and applied to at least one end face of the cooling plate precursor on the bonding side. The end face of the cooling plate precursor on the bonding side is preferably polished to a surface roughness Ra of 1.6 μm or less, and more preferably to 0.4 μm or less. The thickness of the applied bonding material is preferably 5 μm or more and 30 μm or less.

[0091] Next, multiple cooling plate precursors are placed and heated while applying pressure vertically to the upper surface. The pressure is preferably 5 kPa or more. The heating temperature is preferably 1500°C or more and 1800°C or less. The heating time is preferably 0.5 hours or more and 5 hours or less. The heating atmosphere is, for example, a nitrogen or inert gas atmosphere, but may also be a vacuum atmosphere. This allows multiple cooling plate precursors to be bonded together.

[0092] The bonding material may be any material capable of bonding the cooling plate precursors together. For example, it may be a paste of mixed powder containing at least BC powder in SiC powder, which is the same main component as the cooling plate precursor. Alternatively, it may be a paste containing 90 wt% or more of SiC, and optionally containing Si or B to adjust the temperature at which it becomes molten during bonding. Au brazing material, silver brazing material, or Al foil may also be used.

[0093] Next, a bonding method that does not use a bonding material will be described. First, multiple cooling plate precursors are arranged. The end faces of the cooling plate precursors on the bonding side are preferably polished to a surface roughness Ra of 0.1 μm or less. Next, they are heated while being pressed in a direction perpendicular to the upper surface. Among the bonding conditions, the pressure is preferably 4 MPa or more. The heating temperature is preferably 1600°C or more and 2000°C or less. The heating time is preferably 0.5 hours or more and 6 hours or less. The heating atmosphere is, for example, a nitrogen or inert gas atmosphere, but may also be a vacuum atmosphere. In this way, multiple cooling plate precursors can be bonded to form a cooling plate having a refrigerant flow path therein.

[0094] In the above-described method, the cooling plate precursor is formed from a ceramic sintered body and then bonded to form a cooling plate, but the cooling plate precursor may also be formed from a ceramic calcined body and then bonded and sintered to form a cooling plate. Furthermore, when the structure of the refrigerant flow path, etc. is simple, the cooling plate can also be produced by processing a ceramic degreased body, laminating it, and sintering it. When the structure of the refrigerant flow path, etc. is complex, or when high dimensional accuracy of the refrigerant flow path, etc. is required, the method of bonding ceramic sintered bodies is preferable.

[0095] In the cooling plate processing step, the outer shape of the cooling plate is processed. Furthermore, if necessary, a discharge flow path, a medium flow path, terminal holes or through holes for connecting terminals, etc. are drilled. The drilling of the discharge flow path, the medium flow path, terminal holes or through holes for connecting terminals, etc. may be performed before the cooling plate precursor joining step.

[0096] (Method of manufacturing electrical insulating layer) When the electrical insulating layer of the susceptor according to the embodiment of the present invention is formed of a ceramic sintered body, it is produced, for example, by a molded body hot pressing method described below. Note that the method for producing the electrical insulating layer is not limited to this method, and may be, for example, a powder hot pressing method or a conventional green sheet lamination method.

[0097] The method for manufacturing an electrical insulating layer of a susceptor according to an embodiment of the present invention by hot pressing a molded body includes a ceramic molded body forming step, a ceramic degreased body preparing step, a firing step, and a ceramic sintered body processing step.

[0098] In the ceramic green body forming process, multiple ceramic green bodies are formed from ceramic raw material powder containing, for example, aluminum nitride (AlN) as the main component. Sintering aids may be added as needed. For example, AlN ceramic raw material powder is mixed with an appropriate amount of additives, such as a sintering aid Y2O3, a binder, a plasticizer, and a dispersant, to prepare a slurry, which is then granulated by a method such as spray drying. The granulated powder is then pressure-molded to form multiple ceramic green bodies.

[0099] The AlN ceramic raw material powder is preferably highly pure, preferably 99% or more, more preferably 99.9% or more, and preferably has an average particle size of 0.1 μm to 1.0 μm.

[0100] When at least a portion of the electrical insulation layer is to be made porous, a ceramic molded body with modified conditions, such as using AlN ceramic raw material powder with a larger average particle size, adding a pore-forming agent, or changing the amount of sintering aid or additive added, can be prepared for the ceramic molded body of the portion that will be made porous after sintering, and then sintered in combination with a normal ceramic molded body, thereby making at least a portion of the electrical insulation layer porous.

[0101] The mixing and molding methods are the same as those for the SiC ceramics described above. After molding, the ceramic compact may be machined to adjust its shape. When embedding a heater electrode in the electrical insulating layer, a groove may be formed on one side of the ceramic compact (the surface to be joined with another ceramic compact) in a shape that matches the shape of the heater electrode. Machining may be performed after degreasing.

[0102] In the ceramic degreased body preparation process, a plurality of ceramic compacts are degreased at a predetermined temperature or higher for a predetermined time or longer to prepare a plurality of ceramic degreased bodies. The conditions for the ceramic degreased body preparation process are the same as those for the SiC ceramics described above.

[0103] When embedding heater electrodes in the electrical insulation layer, the heater electrodes are prepared in a shape that corresponds to the design and application of the susceptor. The heater electrodes can be formed in various shapes, such as mesh or foil. They can also be made of various materials, such as molybdenum and tungsten. The heater electrodes and multiple ceramic degreased bodies are combined to form a flat laminate with the heater electrodes embedded.

[0104] In the firing process, the formed ceramic degreased body or laminate is sintered under uniaxial pressure or atmospheric pressure to form a ceramic sintered body. When uniaxial pressure firing is used, the pressure is preferably 1 MPa or more. The firing temperature is preferably 1700°C or more and 2000°C or less. The firing time is preferably 1 hour or more and 12 hours or less, and more preferably 1 hour or more and 5 hours or less. The firing atmosphere is, for example, a nitrogen or inert gas atmosphere, but may also be a vacuum atmosphere. As a result, one or more ceramic degreased bodies are sintered to form an AlN ceramic sintered body.

[0105] In the ceramic sintered body processing process, the AlN ceramic sintered body is subjected to necessary processing such as external shape processing, and an electrical insulating layer is formed.

[0106] (Joining process) The bonding process involves selecting an appropriate bonding method depending on the materials and CTE differences of the fabricated cooling plate and electrical insulating layer. Bonding methods include brazing materials containing metals such as In, Al, and Au, direct bonding, and bonding with inorganic or organic adhesives.

[0107] When bonding using brazing material, the bonding surfaces of the cooling plate and the electrical insulating layer preferably have a surface roughness Ra of 1.6 μm or less. The brazing material is then placed between the bonding surfaces of the cooling plate and the electrical insulating layer and heated to the melting point or glass transition point of the brazing material to bond them. The brazing material may be a thin metal film.

[0108] In the case of direct bonding, the bonding surfaces of the cooling plate and the electrical insulating layer preferably have a surface roughness Ra of 0.2 μm or less, more preferably 0.1 μm or less. Then, the bonding surfaces of the cooling plate and the electrical insulating layer are aligned and bonded by applying a force of 1 MPa or more in the direction perpendicular to the bonding surfaces and heating to 1500°C or more.

[0109] When bonding using an inorganic or organic adhesive, the bonding surfaces of the cooling plate and the electrical insulating layer preferably have a surface roughness Ra of 1.6 μm or less. The adhesive is then placed between the bonding surfaces of the cooling plate and the electrical insulating layer and heated to the glass transition point of the adhesive to bond them. When using an adhesive, it is preferable that a filler be added to the adhesive to increase thermal conductivity.

[0110] In this manner, the susceptor according to the embodiment of the present invention can be manufactured.

[0111] As described above, the substrate processing apparatus, susceptor, and substrate processing method of the present invention can reduce the thermal resistance between the substrate and susceptor, and can transfer a large amount of heat to the susceptor while maintaining the substrate temperature at or below a certain temperature. Furthermore, because the medium on which the substrate is placed is in a liquid state, self-alignment by the medium (flatness correction by meniscus force) can be expected.

[0112] The present invention is not limited to the above-described embodiments, and it goes without saying that various modifications and equivalents are included within the spirit and scope of the present invention. Furthermore, the structure, shape, number, position, size, etc. of the components shown in each drawing are for the convenience of explanation and may be changed as appropriate. [Explanation of symbols]

[0113] 100 Substrate processing apparatus 110 Decompression vessel 112 Chamber 114 Exhaust system 116 Gas Supply System 120 Media supply means 122 Media supply device 130 Electrode or discharge antenna 200 susceptors 210 Cooling board 212 Refrigerant flow path 214 Media channel 216 Discharge channel 220 Electrical insulating layer 222 Substrate mounting surface 224 Media supply hole 226 Exhaust Vent 228 Porous Materials 230 Bonding layer 240 Chiller Unit 250 heater

Claims

1. a vacuum vessel; a susceptor installed in the reduced pressure vessel and having a flat cooling plate and an electrical insulating layer disposed on the cooling plate; a medium supplying means for supplying a medium that undergoes a phase transition from a liquid to a solid in a predetermined temperature range of 0° C. or less to the substrate mounting surface of the electrical insulating layer; an electrode or a discharge antenna provided at a position facing the substrate mounting surface, At least one of the electrode, the discharge antenna, and the cooling plate is connected to a high-frequency power source, and a substrate fixed to the substrate mounting surface is processed via the medium; The substrate processing apparatus is characterized in that the susceptor has an exhaust hole that opens to the substrate mounting surface and that sucks the medium or adsorbs the substrate.

2. 2. The substrate processing apparatus according to claim 1, wherein the medium is water or a mixture of water and alcohol.

3. 2. The substrate processing apparatus according to claim 1, wherein the medium supplying means is a medium supplying hole provided in the susceptor and opening in the substrate mounting surface.

4. A substrate processing apparatus as described in Claim 3, characterized in that at least a portion of the substrate mounting surface of the electrical insulation layer is formed from a porous material.

5. A substrate processing apparatus as described in claim 1, characterized in that the cooling plate is made of metal, ceramics, or a composite material thereof.

6. A substrate processing apparatus as described in claim 1, characterized in that the electrical insulation layer is made of a ceramic sprayed film, a ceramic sintered body, or an organic film.

7. A substrate processing apparatus as described in claim 1, characterized in that a bonding layer is provided between the cooling plate and the electrical insulation layer, and the cooling plate and the electrical insulation layer are bonded via the bonding layer.

8. A substrate processing apparatus as described in claim 1, characterized in that the susceptor is equipped with a heater.

9. A substrate processing apparatus described in any one of claims 1 to 8, characterized in that the substrate processing apparatus is a dry etching apparatus.

10. The cooling plate having a flat shape connected to a high frequency power source or ground; the electrically insulating layer disposed on the cooling plate and having the substrate mounting surface; the exhaust hole is open to the substrate mounting surface and sucks the medium or adsorbs the substrate, A susceptor used in the substrate processing apparatus of claim 1.

11. A susceptor as described in claim 10, characterized in that it is provided with a medium supply hole that opens onto the substrate mounting surface and supplies the medium.

12. A susceptor as described in Claim 11, characterized in that at least a portion of the substrate mounting surface of the electrical insulating layer is formed of a porous material.

13. A susceptor as described in claim 10, characterized in that the cooling plate is made of metal, ceramic, or a composite material thereof.

14. A susceptor as described in claim 10, characterized in that the electrical insulation layer is made of a ceramic sprayed film, a ceramic sintered body, or an organic film.

15. A susceptor as described in Claim 10, characterized in that a bonding layer is provided between the cooling plate and the electrical insulation layer, and the cooling plate and the electrical insulation layer are bonded via the bonding layer.

16. The susceptor of claim 10, further comprising a heater.

17. A substrate processing method comprising: supplying a medium that undergoes a phase transition from liquid to solid within a predetermined temperature range of 0° C. or less onto a substrate mounting surface of a susceptor in a reduced pressure vessel; placing a substrate on the substrate placement surface to which the medium has been supplied; a step of cooling the substrate mounting surface to a temperature below the predetermined temperature range, causing a phase transition of the medium, and fixing the substrate to the substrate mounting surface via the medium; depressurizing the decompression vessel; processing the substrate; Including, The substrate processing method according to claim 1, wherein the susceptor has an exhaust hole that opens to the substrate mounting surface and that sucks the medium or adsorbs the substrate.

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