Etching composition

Abstract

The present disclosure relates to etching compositions that include: 1) at least one oxidizing agent; 2) at least one chelating agent; 3) at least one organic solvent; 4) at least one amine compound; and 5) water.

Description

[Technical Field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS This application claims priority to U.S. Provisional Patent Application No. 62 / 898,069, filed September 10, 2019, which is incorporated herein by reference in its entirety.

[0002] The present disclosure relates to compositions and methods for selectively etching titanium silicon nitride in the presence of other materials, such as metallic conductors, barrier materials, insulator materials, and exposed or underlying layers of copper, tungsten, and low-k dielectric materials. [Background technology]

[0003] The semiconductor industry is rapidly reducing the dimensions and increasing the density of electronic circuits and components in microelectronic devices, silicon chips, liquid crystal displays, MEMS (microelectromechanical systems), printed wiring boards, and the like. The integrated circuits therein are structured in layers or stacks, and the thickness of the insulating layers between each circuit layer continues to shrink, resulting in smaller and smaller feature sizes. As feature sizes shrink, patterns become smaller and device performance parameters become more stringent and robust. As a result, various problems that were previously acceptable are no longer acceptable or are becoming increasingly problematic due to the shrinking feature sizes.

[0004] In the fabrication of advanced integrated circuits, both high-k and low-k insulators, as well as combinations of barrier layer materials, have been used to minimize problems associated with increasing density and to optimize performance.

[0005] Titanium silicon nitride (TiSiN) can be used in semiconductor devices and as a ground and cap layer for noble metal, aluminum (Al), and copper (Cu) interconnects. It can be used as a barrier metal, hard mask, or gate metal in semiconductor devices.

[0006] In the construction of devices for these applications, it is often necessary to etch TiSiN. In various types of TiSiN applications and device environments, other layers are in contact with or exposed while the TiSiN is being etched. In the presence of these other materials (e.g., metal conductors, dielectrics, and hard marks), highly selective etching of TiSiN is essential for device yield and long life. The etching process for TiSiN can be a plasma etching process. However, using a plasma etching process on the TiSiN layer can cause damage to either or both the gate insulating layer and the semiconductor substrate. In addition, the etching process can remove portions of the semiconductor substrate by etching the gate insulating layer exposed by the gate electrode. The electrical characteristics of the transistor can be adversely affected. To avoid such etching damage, additional protective device fabrication steps can be used, but at significant cost.

[0007] Wet etching methods for TiSiN are known. Such methods may involve the use of etchants containing hydrofluoric acid in combination with other reagents. However, the selectivity to silicon-based dielectrics and metals (e.g., Al) is not sufficient, and other exposed metals in the device may also be corroded or etched.

[0008] Therefore, there is a need for a TiSiN etching solution that has a relatively high etch rate, but a relatively low etch and corrosion rate for other semiconductor materials that are exposed or in contact with the TiSiN during the etching process. Summary of the Invention [Problem to be solved by the invention]

[0009] The present disclosure relates to compositions and methods for selectively etching TiSiN relative to metal conductor layers, hard mask layers, and low-k dielectric layers present in semiconductor devices. More particularly, the present disclosure relates to compositions and methods for selectively etching titanium silicon nitride relative to copper, tungsten, bottom antireflective coatings (BARCs), high-k dielectrics (e.g., HfOx), and interlayer dielectrics (ILDs) (e.g., SiOx or low-k dielectrics). [Means for solving the problem]

[0010] In one aspect, the present disclosure relates to an etching composition (e.g., an etching composition for selectively removing TiSiN) that includes: 1) at least one oxidizing agent; 2) at least one chelating agent; 3) at least one organic solvent; 4) at least one amine compound; and 5) water, and has a pH of about 6.5 to about 9.5.

[0011] In some embodiments, the etching composition comprises: 1) at least one oxidizing agent in an amount of about 0.1% to about 30% by weight of the composition; 2) at least one chelating agent in an amount of about 0.01% to about 1% by weight of the composition; 3) at least one organic solvent in an amount of about 1% to about 30% by weight of the composition; 4) at least one amine compound comprising a diamine, an alkanolamine, or a quaternary ammonium compound containing 1 to 6 carbon atoms and in an amount of about 0.1% to about 5% by weight of the composition; and 5) water, and the composition has a pH of about 6.5 to about 9.5.

[0012] In another aspect, the present disclosure relates to a method comprising contacting a semiconductor substrate including TiSiN features with an etching composition disclosed herein to remove said TiSiN features.

[0013] In yet another aspect, the present disclosure relates to an article formed by the method described above, wherein the article is a semiconductor device (eg, an integrated circuit). DETAILED DESCRIPTION OF THE INVENTION

[0014] As defined herein, unless otherwise specified, all percentages expressed should be understood as weight percents based on the total weight of the etching composition. Unless otherwise specified, ambient temperature is defined as being between about 16 degrees Celsius and about 27 degrees Celsius (°C). As defined herein, a "water-soluble" substance (e.g., a water-soluble alcohol, ketone, ester, or ether) means a substance that has a solubility of at least 0.5% by weight (e.g., at least 1% by weight or at least 5% by weight) in water at 25°C.

[0015] In one aspect, the present disclosure relates to an etching composition (e.g., an etching composition for selectively removing TiSiN) that includes: 1) at least one oxidizing agent; 2) at least one chelating agent; 3) at least one organic solvent; 4) at least one amine compound; and 5) water.

[0016] In some embodiments, the etching compositions of the present disclosure may contain at least one (e.g., two, three, or four) oxidizing agent suitable for microelectronic cleaning compositions. Examples of oxidizing agents to be used in the compositions of the present disclosure include, but are not limited to, peroxides (e.g., hydrogen peroxide, dialkyl peroxides, urea hydrogen peroxide), persulfonic acids (e.g., hexafluoropropanepersulfonic acid, methanepersulfonic acid, trifluoromethanepersulfonic acid, or p-toluenepersulfonic acid) and their salts, ozone, percarbonates (e.g., peracetic acid) and their salts, perphosphoric acid and its salts, persulfuric acid and its salts (e.g., ammonium persulfate or tetramethylammonium persulfate), perchloric acid and its salts (e.g., ammonium perchlorate or tetramethylammonium perchlorate), and periodic acid and its salts (e.g., ammonium periodate or tetramethylammonium periodate). These oxidizing agents may be used alone or in combination.

[0017] In some embodiments, the at least one oxidizing agent is present in an amount of about 0.1 wt. % or more (e.g., about 1 wt. % or more, about 2.5 wt. % or more, about 5 wt. % or more, about 7.5 wt. % or more, about 10 wt. % or more, about 11 wt. % or more, about 12 wt. % or more, about 13 wt. % or more, about 14 wt. % or more, or about 15 wt. % or more) and / or about 30 wt. % or less (e.g., about 25 wt. % or less, about 20 wt. % or less, about 19 wt. % or less, about 18 wt. % or less, about 17 wt. % or less, or about 15 wt. % or less) of the etching composition of the present disclosure.

[0018] In some embodiments, the etching compositions of the present disclosure may contain at least one (e.g., two, three, or four) chelating agent, which may be, but is not limited to, a polyaminopolycarboxylic acid. For purposes of this disclosure, polyaminopolycarboxylic acid refers to a compound having multiple (e.g., two, three, four, or more) amino groups and multiple (e.g., two, three, four, or more) carboxylic acid groups. Suitable classes of polyaminopolycarboxylic acid chelating agents include, but are not limited to, mono- or polyalkylenepolyaminepolycarboxylic acids, polyaminoalkanepolycarboxylic acids, polyaminoalkanolpolycarboxylic acids, and hydroxyalkyletherpolyaminepolycarboxylic acids.

[0019] Suitable polyaminopolycarboxylic acid chelating agents include, but are not limited to, butylenediaminetetraacetic acid, diethylenetriaminepentaacetic acid (DTPA), ethylenediaminetetrapropionic acid, triethylenetetraminehexaacetic acid, 1,3-diamino-2-hydroxypropane-N,N,N',N'-tetraacetic acid, propylenediaminetetraacetic acid, ethylenediaminetetraacetic acid (EDTA), trans-1,2-diaminocyclohexanetetraacetic acid, ethylenediaminediacetic acid, ethylenediaminedipropionic acid, 1,6-hexamethylene-diamine-N,N,N',N'-tetraacetic acid, N,N-bis(2-hydroxybenzyl)ethylenediamine-N,N-diacetic acid, diaminopropanetetraacetic acid, 1,4,7,10-tetraazacyclododecane-tetraacetic acid, diaminopropanoltetraacetic acid, and (hydroxyethyl)ethylene-diaminetriacetic acid.

[0020] In some embodiments, the at least one chelating agent may be present in an amount of about 0.01 wt. % or more (e.g., about 0.05 wt. % or more, about 0.1 wt. % or more, about 0.15 wt. % or more, about 0.2 wt. % or more, about 0.25 wt. % or more, or about 0.3 wt. % or more) and / or about 1 wt. % or less (e.g., about 0.9 wt. % or less, about 0.8 wt. % or less, about 0.7 wt. % or less, about 0.6 wt. % or less, about 0.5 wt. % or less, about 0.4 wt. % or less, or about 0.3 wt. % or less) of the etching composition of the present disclosure.

[0021] In some embodiments, the etching compositions of the present disclosure may optionally contain at least one (e.g., two, three, or four) metal corrosion inhibitor selected from substituted or unsubstituted benzotriazoles. Suitable substituted benzotriazoles include, but are not limited to, benzotriazoles substituted with alkyl, aryl, halogen, amino, nitro, alkoxy, and hydroxyl groups. Substituted benzotriazoles also include benzotriazoles fused with one or more aryl (e.g., phenyl) or heteroaryl groups.

[0022] Benzotriazoles suitable for use as metal corrosion inhibitors include, but are not limited to, benzotriazole (BTA), 5-aminobenzotriazole, 1-hydroxybenzotriazole, 5-phenylthiol-benzotriazole, 5-chlorobenzotriazole, 4-chlorobenzotriazole, 5-bromobenzotriazole, 4-bromobenzotriazole, 5-fluorobenzotriazole, 4-fluorobenzotriazole, naphthotriazole, tolyltriazole, 5-phenyl-benzotriazole, 5-nitrobenzotriazole, 4-nitrobenzotriazole, 2-(5-amino-pentyl)-benzotriazole, 1-amino-benzotriazole, 5-methyl-1H-benzotriazole (5-MBTA), benzotriazole-5-carboxylic acid, 4-methylbenzotriazole, 4-ethylbenzotriazole, 5-ethylbenzotriazole, 4-propylbenzotriazole , 5-propylbenzotriazole, 4-isopropylbenzotriazole, 5-isopropylbenzotriazole, 4-n-butylbenzotriazole, 5-n-butylbenzotriazole, 4-isobutylbenzotriazole, 5-isobutylbenzotriazole, 4-pentylbenzotriazole, 5-pentylbenzotriazole, 4-hexylbenzotriazole, 5-hexylbenzotriazole, 5-methoxybenzotriazole, 5-hydroxybenzotriazole, dihydroxypropylbenzotriazole, 1-[N,N-bis(2-ethylhexyl)aminomethyl]-benzotriazole, 5-t-butylbenzotriazole, 5-(1',1'-dimethylpropyl)-benzotriazole, 5-(1',1',3'-trimethylbutyl)benzotriazole, 5-n-octylbenzotriazole, and 5-(1',1',3',3'-tetramethylbutyl)benzotriazole.

[0023] In some embodiments, the at least one metal corrosion inhibitor is present in an amount of about 0.05% or more (e.g., about 0.1% or more, about 0.15% or more, about 0.2% or more, about 0.25% or more, or about 0.3% or more) and / or about 1% or less (e.g., about 0.9% or less, about 0.8% or less, about 0.7% or less, about 0.6% or less, about 0.5% or less, about 0.4% or less, or about 0.3% or less) by weight of the etching composition of the present disclosure. Without being bound by theory, it is believed that the inclusion of a metal corrosion inhibitor in the etching composition of the present disclosure can reduce corrosion or etching of metals (e.g., Co, Cu, or W) and / or high-k dielectric materials (e.g., HfOx) in semiconductor substrates.

[0024] In some embodiments, the etching compositions of the present disclosure may contain at least one (e.g., two, three, or four) organic solvents, preferably selected from the group consisting of water-soluble alcohols, water-soluble ketones, water-soluble esters, and water-soluble ethers (e.g., glycol diethers).

[0025] Classes of water-soluble alcohols include, but are not limited to, alkanediols (including, but not limited to, alkylene glycols), glycols, alkoxyalcohols (including, but not limited to, glycol monoethers), saturated aliphatic monohydric alcohols, unsaturated non-aromatic monohydric alcohols, and low molecular weight alcohols containing a ring structure (e.g., C4-C8 alcohols).

[0026] Examples of water-soluble alkanediols include, but are not limited to, 2-methyl-1,3-propanediol, 1,3-propanediol, 2,2-dimethyl-1,3-diol, 1,4-butanediol, 1,3-butanediol, 1,2-butanediol, 2,3-butanediol, pinacol, and alkylene glycols.

[0027] Examples of water-soluble alkylene glycols include, but are not limited to, ethylene glycol, propylene glycol, diethylene glycol, dipropylene glycol, triethylene glycol, and tetraethylene glycol.

[0028] Examples of water-soluble alkoxy alcohols include, but are not limited to, 3-methoxy-3-methyl-1-butanol, 3-methoxy-1-butanol, 1-methoxy-2-butanol, and water-soluble glycol monoethers.

[0029] Examples of water-soluble glycol monoethers include, but are not limited to, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol mono-n-propyl ether, ethylene glycol monoisopropyl ether, ethylene glycol mono-n-butyl ether (EGBE), diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether, triethylene glycol monobutyl ether, 1-methoxy-2-propanol, 2-methoxy-1-propanol, 1-ethoxy-2-propanol, 2-ethoxy-1-propanol, propylene glycol mono-n-propyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, dipropylene glycol monobutyl ether, dipropylene glycol mono-n-propyl ether, tripropylene glycol monoethyl ether, tripropylene glycol monomethyl ether, ethylene glycol monobenzyl ether, and diethylene glycol monobenzyl ether.

[0030] Examples of water-soluble saturated aliphatic monohydric alcohols include, but are not limited to, methanol, ethanol, n-propyl alcohol, isopropyl alcohol, 1-butanol, 2-butanol, isobutyl alcohol, tert-butyl alcohol, 2-pentanol, t-pentyl alcohol, and 1-hexanol.

[0031] Examples of water-soluble unsaturated non-aromatic monohydric alcohols include, but are not limited to, allyl alcohol, propargyl alcohol, 2-butenyl alcohol, 3-butenyl alcohol, and 4-penten-2-ol.

[0032] Examples of water-soluble low molecular weight alcohols containing a ring structure include, but are not limited to, tetrahydrofurfuryl alcohol, furfuryl alcohol, and 1,3-cyclopentanediol.

[0033] Examples of water-soluble ketones include, but are not limited to, acetone, cyclobutanone, cyclopentanone, diacetone alcohol, 2-butanone, 5-hexanedione, 1,4-cyclohexanedione, 3-hydroxyacetophenone, 1,3-cyclohexanedione, and cyclohexanone.

[0034] Examples of water-soluble esters include, but are not limited to, ethyl acetate, glycol monoesters (such as ethylene glycol monoacetate and diethylene glycol monoacetate), and glycol monoether monoesters (such as propylene glycol monomethyl ether acetate, ethylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, and ethylene glycol monoethyl ether acetate).

[0035] In some embodiments, the at least one organic solvent is present in an amount of about 1 wt % or more (e.g., about 2 wt % or more, about 3 wt % or more, about 4 wt % or more, about 5 wt % or more, about 6 wt % or more, about 7 wt % or more, about 8 wt % or more, about 9 wt % or more, or about 10 wt % or more) and / or about 30 wt % or less (e.g., about 25 wt % or less, about 20 wt % or less, about 15 wt % or less, about 14 wt % or less, about 13 wt % or less, about 12 wt % or less, about 11 wt % or less, about 10 wt % or less) of the etching composition of the present disclosure.

[0036] In some embodiments, the etching compositions of the present disclosure may contain at least one (e.g., two, three, or four) amine compound. The amine compound may be a diamine, an alkanolamine, or a quaternary ammonium compound. In some embodiments, the amine compound may contain 1, 2, 3, 4, 5, or 6 carbon atoms.

[0037] In some embodiments, the diamine may be a compound of formula (I): H2N-R1-NH2(I), where R1 is a linear or branched C2-C6 alkyl. Examples of diamines of formula (I) include ethylenediamine, 1,2-diaminopropane, and 1,3-diaminopropane.

[0038] In some embodiments, the alkanolamine may be a compound of formula (II): HO-R1-NH2(II), where R1 is a linear or branched C2-C6 alkyl. An example of an alkanolamine of formula (II) is ethanolamine (also known as monoethanolamine or MEA).

[0039] In some embodiments, the quaternary ammonium compound may be a quaternary ammonium salt or a quaternary ammonium hydroxide. In some embodiments, the quaternary ammonium compound may be a tetraalkylammonium compound (e.g., a salt or hydroxide). In some embodiments, the quaternary ammonium compound has the formula (III): [NR1R2R3R4] + X - (III), where R1, R2, R3, and R4 are each independently a straight or branched C1-C6 alkyl, and X is OH or halo (e.g., F, Cl, Br, or I). An example of a quaternary ammonium compound of formula (III) is tetramethylammonium fluoride.

[0040] In some embodiments, the at least one amine compound is present in an amount of about 0.1 wt. % or more (e.g., about 0.2 wt. % or more, about 0.3 wt. % or more, about 0.5 wt. % or more, about 0.7 wt. % or more, about 1 wt. % or more, about 1 wt. % or more, about 1 wt. % or more, about 1.2 wt. % or more, about 1.4 wt. % or more, or about 1.5 wt. % or more) and / or about 5 wt. % or less (e.g., about 4.5 wt. % or less, about 4 wt. % or less, about 3.5 wt. % or less, about 3 wt. % or less, about 2.5 wt. % or less, about 2 wt. % or less, about 1.5 wt. % or less, or about 1 wt. % or less) of the etching composition of the present disclosure. Without being bound by theory, it is believed that the inclusion of an amine compound in the etching composition of the present disclosure can increase the etching of TiSiN in semiconductor substrates and / or reduce the corrosion or etching of high-k dielectric materials (e.g., HfOx).

[0041] The etching compositions of the present disclosure may further comprise water. Preferably, the water is deionized, ultrapure water, free of organic contaminants, and has a minimum resistivity of about 4 to about 17 megaohms. More preferably, the resistivity of the water is about 17 megaohms or greater.

[0042] In some embodiments, the water is present in an amount of about 35% by weight or more (e.g., about 45% by weight or more, about 50% by weight or more, about 55% by weight or more, about 60% by weight or more, about 65% by weight or more, about 68% by weight or more, or about 70% by weight or more) and / or about 98% by weight or less (e.g., about 95% by weight or less, about 90% by weight or less, about 85% by weight or less, about 80% by weight or less, about 75% by weight or less, or about 70% by weight or less) of the etching composition of the present disclosure.

[0043] In some embodiments, the etching compositions of the present disclosure may optionally include at least one acid (e.g., two, three, or four). The acid may be an organic acid or an inorganic acid. Suitable organic acids may include carboxylic acids or sulfonic acids, such as alkylsulfonic acids or arylsulfonic acids. Examples of suitable alkylsulfonic acids include methanesulfonic acid, trifluoromethanesulfonic acid (or triflic acid), and 2-hydroxyethanesulfonic acid (or isethionic acid). An example of a suitable arylsulfonic acid is p-toluenesulfonic acid. Suitable inorganic acids may include mineral acids, such as hydrogen halides (e.g., hydrochloric acid or hydrobromic acid).

[0044] In some embodiments, the at least one acid is present in an amount of about 0.1 wt. % or more (e.g., about 0.2 wt. % or more, about 0.3 wt. % or more, about 0.5 wt. % or more, about 0.7 wt. % or more, about 1 wt. % or more, about 1 wt. % or more, about 1 wt. % or more, about 1.2 wt. % or more, about 1.4 wt. % or more, about 1.5 wt. % or more, about 1.6 wt. % or more, about 1.8 wt. % or more, or about 2 wt. % or more) and / or about 5 wt. % or less (e.g., about 4.5 wt. % or less, about 4 wt. % or less, about 3.5 wt. % or less, about 3 wt. % or less, about 2.5 wt. % or less, about 2 wt. % or less, about 1.5 wt. % or less, or about 1 wt. % or less) of the etching composition of the present disclosure. Without being bound by theory, it is believed that the inclusion of an acid in the etching composition of the present disclosure can adjust the pH of the composition and reduce corrosion or etching of high-k dielectric materials (e.g., HfOx) in semiconductor substrates.

[0045] In some embodiments, the etching compositions of the present disclosure may have a pH of about 6.5 or greater (e.g., about 7 or greater, about 7.5 or greater, about 7.8 or greater, or about 8 or greater) and / or about 9.5 or less (e.g., about 9 or less, about 8.5 or less, about 8.2 or less, or about 8 or less). Without being bound by theory, it is believed that etching compositions with a pH lower than 6.5 significantly increase the etch rate of cobalt and decrease the etch rate of TiSiN, while etching compositions with a pH higher than 9.5 accelerate decomposition of the oxidizing agent (e.g., hydrogen peroxide), resulting in significantly increased corrosion of tungsten. The relative concentrations of the polyaminopolycarboxylic acid, the benzotriazole (or derivative thereof), the acid, and the amine compound in the etching compositions of the present disclosure may be adjusted to achieve a desired pH.

[0046] In some embodiments, the etching compositions of the present disclosure may contain optional additives such as additional pH adjusters, additional corrosion inhibitors, surfactants, additional organic solvents, biocides, and antifoaming agents.

[0047] Examples of suitable antifoaming agents include polysiloxane antifoaming agents (e.g., polydimethylsiloxane), polyethylene glycol methyl ether polymers, ethylene oxide / propylene oxide copolymers, and glycidyl ether-capped acetylenic diol ethoxylates (such as those described in U.S. Patent No. 6,717,019, incorporated herein by reference). Optional surfactants may be cationic, anionic, nonionic, or amphoteric.

[0048] In some embodiments, the etching compositions of the present disclosure may optionally be free of one or more components, or any combination of more than one component. Such components that may be absent from the etching compositions include organic solvents, pH adjusters, polymers (e.g., cationic or anionic polymers, or polyethers such as poly(methyl vinyl ether)), oxygen scavengers, quaternary ammonium compounds (e.g., salts or hydroxides), amines, alkali bases (e.g., alkali hydroxides), surfactants other than antifoaming agents, antifoaming agents, fluoride-containing compounds, abrasives (e.g., cationic or anionic abrasives), silicates, hydroxycarboxylic acids (e.g., those containing more than two hydroxyl groups), monocarboxylic and polycarboxylic acids (e.g., those containing amino groups or (excluding 1,8-diazabicyclo[5.4.0]undec-7-ene (DBU) and 1,5-diazabicyclo[4.3.0]non-5-ene (DBN)), silanes (e.g., alkoxysilanes), imines (e.g., amidines such as 1,8-diazabicyclo[5.4.0]undec-7-ene (DBU) and 1,5-diazabicyclo[4.3.0]non-5-ene (DBN)), hydrazines, cyclic compounds (e.g., cyclic compounds containing at least two rings such as azoles (e.g., diazoles, triazoles, or tetrazoles), triazines, and substituted or unsubstituted naphthalenes or substituted or unsubstituted biphenyl ethers), buffers, non-azole corrosion inhibitors, halide salts, and metal salts (e.g., metal halides).

[0049] In some embodiments, an advantage of the etching compositions described herein is that they can selectively etch TiSiN without substantially removing or etching high-k dielectric materials (e.g., HfOx).

[0050] The etching compositions of the present disclosure may be prepared by simply mixing the components together, or by blending two components in a kit. The first composition in the kit may be an aqueous solution of an oxidizing agent (e.g., hydrogen peroxide). The second composition in the kit may contain the remaining components of the etching compositions of the present disclosure in concentrated form in predetermined ratios, such that blending the two compositions will yield the desired etching composition of the present disclosure.

[0051] Alternatively, the etching composition of the present disclosure may be prepared by blending three compositions in a kit. In such an embodiment, the first composition may include the oxidizer in the form of an aqueous concentrate, the second composition may include only water, and the third composition may include all of the remaining components of the etching composition of the present disclosure in predetermined proportions.

[0052] The present disclosure also relates to a method for etching a semiconductor substrate including TiSiN features. The method may include contacting the semiconductor substrate including TiSiN features with an etching composition of the present disclosure to remove the TiSiN features. The method may further include rinsing the semiconductor substrate with a rinse solvent after the contacting step and / or drying the semiconductor substrate after the rinsing step. In some embodiments, the method does not substantially remove HfOx from the semiconductor substrate. For example, the method removes at most about 5 wt% (e.g., at most about 3 wt% or at most about 1 wt%) of HfOx from the semiconductor substrate. As another example, when using the etching compositions described herein for a time period to achieve a desired TiSiN etching effect (e.g., 2 minutes), the film loss of the HfOx layer in the semiconductor substrate may be about 1 Å or less (e.g., about 0.5 Å or less or 0.1 Å or less).

[0053] In some embodiments, the etching method comprises: (A) providing a semiconductor substrate including TiSiN features; (B) contacting the semiconductor substrate with an etching composition described herein; (C) rinsing the semiconductor substrate with one or more suitable rinsing solvents; and (D) optionally drying the semiconductor substrate (e.g., by any suitable means that removes the rinse solvent and does not compromise the integrity of the semiconductor substrate); Includes.

[0054] In some embodiments, the etching method further comprises forming a semiconductor device (eg, an integrated circuit device such as a semiconductor chip) from the semiconductor substrate obtained by the method described above.

[0055] The semiconductor substrate containing the TiSiN features etched in this manner may contain organic and organometallic residues, as well as various metal oxides, which may also be removed during the etching process.

[0056] Semiconductor substrates are typically constructed from silicon, silicon germanium, III-V compounds such as GaAs, or any combination thereof. The semiconductor substrate may further include exposed integrated circuit structures, such as interconnect features, such as metal lines and dielectric materials. Metals and metal alloys used in interconnect features include, but are not limited to, aluminum, aluminum alloyed with copper, copper, titanium, tantalum, cobalt, silicon, titanium nitride, tantalum nitride, and tungsten. The semiconductor substrate may further include layers of interlayer dielectrics, silicon oxide, silicon nitride, silicon carbide, titanium oxide, and carbon-doped silicon oxide.

[0057] Contacting the semiconductor substrate with the etching composition may be accomplished in any suitable manner, such as by placing the etching composition in a tank and immersing and / or submerging the semiconductor substrate in the etching composition, spraying the etching composition onto the semiconductor substrate, flowing the etching composition onto the semiconductor substrate, or any combination thereof. In some embodiments, the semiconductor substrate is immersed in the etching composition.

[0058] The etching compositions of the present disclosure may be used at temperatures substantially up to about 85° C. In some embodiments, the etching compositions may be used at temperatures between about 20° C. and about 80° C. (e.g., between about 55° C. and about 65° C. or between about 60° C. and about 65° C.). The etch rate of TiSiN increases with temperature in this range; therefore, processes at higher temperatures can be performed in shorter times, and processes at lower temperatures require longer etching times.

[0059] Etching times may vary over a wide range depending on the particular etching method, thickness, and temperature used. When etching is performed in an immersion batch-type process, a suitable time range is, for example, up to about 10 minutes (e.g., about 1 minute to about 7 minutes, about 1 minute to about 5 minutes, or about 2 minutes to about 4 minutes).

[0060] In some embodiments, the etching time for a single wafer process may be in the range of about 30 seconds to about 5 minutes (e.g., about 30 seconds to about 4 minutes, about 1 minute to about 3 minutes, or about 1 minute to about 2 minutes).

[0061] Mechanical agitation may be used to further enhance the etching capabilities of the etching compositions of the present disclosure. Suitable agitation methods include circulating the etching composition over the substrate, flowing or spraying the etching composition over the substrate, and ultrasonic or megasonic agitation during the etching process. The orientation of the semiconductor substrate relative to the ground surface may be at any suitable angle. Horizontal or vertical orientations are preferred.

[0062] In some embodiments, following the etching, the semiconductor substrate may be rinsed with a suitable rinse solvent for about 5 seconds to about 5 minutes, with or without agitation. Multiple rinse steps using different rinse solvents may be used. Examples of suitable rinse solvents include, but are not limited to, deionized (DI) water, methanol, ethanol, isopropyl alcohol, N-methylpyrrolidinone, gamma-butyrolactone, dimethyl sulfoxide, ethyl lactate, and propylene glycol monomethyl ether acetate. Alternatively, or in addition, an aqueous rinse with a pH > 8 (such as a dilute aqueous ammonium hydroxide solution) may be used. Examples of rinse solvents include, but are not limited to, a dilute aqueous ammonium hydroxide solution, DI water, methanol, ethanol, and isopropyl alcohol. In some embodiments, the rinse solvent is a dilute aqueous ammonium hydroxide solution, DI water, and isopropyl alcohol. The solvent application may be performed using a method similar to that used to apply the etching compositions described herein. The etching composition may be removed from the semiconductor substrate before the rinsing step begins, or may still be in contact with the semiconductor substrate at the start of the rinsing step. In some embodiments, the temperature used in the rinsing step is between 16°C and 27°C.

[0063] Optionally, the semiconductor substrate is dried after the rinsing step. Any suitable drying means known in the art may be used. Examples of suitable drying means include spin drying, flowing a drying gas over the semiconductor substrate, or heating the semiconductor substrate using a heating means such as a hot plate or infrared lamp, Marangoni drying, Rotagoni drying, IPA drying, or any combination thereof. Drying times vary depending on the specific method used, but are typically on the order of 15 seconds to several minutes.

[0064] In some embodiments, the semiconductor substrate may be subsequently processed to form one or more circuits on the substrate, or may be processed to form a semiconductor chip, for example, by assembling (e.g., dicing and bonding) and packaging (e.g., chip encapsulation). [Example]

[0065] The present disclosure will now be described in more detail with reference to the following examples, which are for illustrative purposes only and should not be construed as limiting the scope of the present disclosure. All percentages listed are by weight (wt %) unless otherwise specified. Testing was performed with controlled stirring at 250 rpm using a 1-inch stir bar unless otherwise specified.

[0066] General Procedure 1 Compound Blend Samples of the etching composition were prepared by adding the remaining ingredients of the formulation to the calculated amount of solvent with stirring until a homogeneous solution was obtained, at which point optional additives, if used, were added.

[0067] General Procedure 2 Materials and Methods Blanket film etch rate measurements were performed on films using commercially available unpatterned 300 mm diameter wafers that were diced into 0.5 x 0.5 inch test coupons for evaluation. The primary blanket film materials used in the testing included 1) a TiSiN film with 19 wt% Si and a thickness of approximately 52 Å disposed on a silicon substrate, 2) a TiSiN film with 23 wt% Si and a thickness of approximately 56 Å disposed on a silicon substrate, and 3) a hafnium oxide (HfOx) film with a thickness of 20 Å disposed on a silicon substrate.

[0068] The blanket film test coupons were measured for thickness before and after processing to determine the etch rate of the blanket film. For TiSiN and HfOx films, thickness was measured before and after processing by ellipsometry using a Woollam M-2000X.

[0069] General Procedure 3 Etching evaluation by beaker test All blanket film etching tests and patterned coupon etching tests were conducted with 200 g of sample solution in a 600 mL glass beaker heated to 60 °C with a Parafilm® cover in place to minimize evaporation losses and continuous stirring at 250 rpm. All blanket or patterned test coupons, with either a patterned or blanket metal or dielectric film exposed on one side to the sample solution, were diced with a diamond scriber to 0.5 x 0.5 inch square test coupons for beaker-scale testing. Each individual test coupon was held in place using a single 4-inch long locking plastic tweezers clip. The test coupon, with one edge held in place by the locking tweezers clip, was suspended in a 600 mL glass beaker and immersed in 200 g of test solution while it was heated to 60 °C and continuously stirred at 250 rpm. Immediately after placing each sample coupon in the heated, stirred solution, the top of the 600 mL glass beaker was covered with Parafilm® and resealed. The test coupons were undisturbed in the stirred, heated solution until the treatment time (described in General Procedure 3A) had elapsed. After the treatment time in the test solution had elapsed, the sample coupons were immediately removed from the 600 mL glass beaker and rinsed according to General Procedure 3A (Blanket Test Coupons). After the final DI rinse step, all test coupons were subjected to a filtered nitrogen gas blow-off step using a handheld nitrogen gas blower, which forced the removal of all traces of DI water and provided the final, dry sample for test measurements.

[0070] General Procedure 3A (Blanket Test Coupon) Immediately after the 10 minute treatment period according to General Procedure 3, the coupon was immersed in a 1000 mL volume of ultra-high purity deionized (DI) water at 20° C. with an overflow rate of approximately 1 liter / minute for 15 seconds, followed by an additional 15 seconds with gentle agitation. Treatment was completed according to General Procedure 3.

[0071] Example 1 Formulation Examples 1 to 10 (FE-1 to FE-10) were prepared according to General Procedure 1 and evaluated according to General Procedure 2 and General Procedure 3. The TiSiN and HfOx films were etched at 60°C for 2 minutes. The formulations are summarized in Table 1, and the test results are summarized in Table 2.

[0072] [Table 1]

[0073] [Table 2]

[0074] Comparative Formulation Examples 1 to 15 (CFE-1 to CFE-15) were prepared according to General Procedure 1 and evaluated according to General Procedure 2 and General Procedure 3. The TiSiN and HfOx films were etched at 60° C. for 2 minutes. The formulations are summarized in Table 3, and the test results are summarized in Table 4.

[0075] [Table 3]

[0076] [Table 4]

[0077] As shown in Tables 2 and 4, formulations FE-1 through FE-10 exhibited improved TiSiN etching and reduced HfOx etching compared to comparative formulations CFE-1 through CFE-15.

[0078] Although the invention has been described in detail with reference to specific embodiments, it will be understood that modifications and variations are within the spirit and scope of the invention as described in the specification and claimed below. The present disclosure includes the following embodiments. <1> 1. An etching composition comprising: 1) at least one oxidizing agent in an amount of about 0.1% to about 30% by weight of the composition; 2) at least one chelating agent in an amount of about 0.01% to about 1% by weight of the composition; 3) at least one organic solvent in an amount of about 1% to about 30% by weight of the composition; 4) at least one amine compound comprising a diamine, an alkanolamine, or a quaternary ammonium compound containing 1 to 6 carbon atoms and in an amount of about 0.1% to about 5% by weight of the composition; and 5) water, and having a pH of about 6.5 to about 9.5. <2> having a pH of about 7 to about 9.5. <1> The composition described in <3> the at least one oxidizing agent comprises hydrogen peroxide; <1> The composition described in <4> the at least one oxidizing agent is in an amount of about 1% to about 18% by weight of the composition; <1> The composition described in <5> the at least one chelating agent comprises a polyaminopolycarboxylic acid; <1> The composition described in <6> The polyaminopolycarboxylic acid is selected from the group consisting of mono- or polyalkylenepolyaminepolycarboxylic acids, polyaminoalkanepolycarboxylic acids, polyaminoalkanolpolycarboxylic acids, and hydroxyalkyletherpolyaminepolycarboxylic acids. <5> The composition described in <7> the polyaminopolycarboxylic acid is selected from the group consisting of butylenediaminetetraacetic acid, diethylenetriaminepentaacetic acid, ethylenediaminetetrapropionic acid, triethylenetetraminehexaacetic acid, 1,3-diamino-2-hydroxypropane-N,N,N',N'-tetraacetic acid, propylenediaminetetraacetic acid, ethylenediaminetetraacetic acid, trans-1,2-diaminocyclohexanetetraacetic acid, ethylenediaminediacetic acid, ethylenediaminedipropionic acid, 1,6-hexamethylenediamine-N,N,N',N'-tetraacetic acid, N,N-bis(2-hydroxybenzyl)ethylenediamine-N,N-diacetic acid, diaminopropanetetraacetic acid, iminodiacetic acid, 1,4,7,10-tetraazacyclododecane-tetraacetic acid, diaminopropanoltetraacetic acid, and (hydroxyethyl)ethylenediaminetriacetic acid; <6> The composition described in <8> the at least one chelating agent is in an amount of about 0.1% to about 0.5% by weight of the composition; <1> The composition described in <9> further comprising at least one metal corrosion inhibitor. <1> The composition described in <10> the at least one metal corrosion inhibitor comprises a substituted or unsubstituted benzotriazole; <9> The composition described in <11> the at least one metal corrosion inhibitor comprises a benzotriazole optionally substituted with at least one substituent selected from the group consisting of an alkyl group, an aryl group, a halogen group, an amino group, a nitro group, an alkoxy group, and a hydroxyl group; <10> The composition described in <12> The substituted or unsubstituted benzotriazole may be benzotriazole, 5-aminobenzotriazole, 1-hydroxybenzotriazole, 5-phenylthiol-benzotriazole, 5-chlorobenzotriazole, 4-chlorobenzotriazole, 5-bromobenzotriazole, 4-bromobenzotriazole, 5-fluorobenzotriazole, 4-fluorobenzotriazole, naphthotriazole, tolyltriazole, 5-phenyl-benzotriazole, 5-nitrobenzotriazole, 4-nitrobenzotriazole, 2-(5-amino-pentyl)-benzotriazole, 1-amino-benzotriazole, 5-methyl-1H-benzotriazole, benzotriazole-5-carboxylic acid, 4-methylbenzotriazole, 4-ethylbenzotriazole, 5-ethylbenzotriazole, 4-propylbenzotriazole, 5-propylbenzotriazole, 4-iso ... the benzotriazole is selected from the group consisting of 1-isopropylbenzotriazole, 5-isopropylbenzotriazole, 4-n-butylbenzotriazole, 5-n-butylbenzotriazole, 4-isobutylbenzotriazole, 5-isobutylbenzotriazole, 4-pentylbenzotriazole, 5-pentylbenzotriazole, 4-hexylbenzotriazole, 5-hexylbenzotriazole, 5-methoxybenzotriazole, 5-hydroxybenzotriazole, dihydroxypropylbenzotriazole, 1-[N,N-bis(2-ethylhexyl)aminomethyl]-benzotriazole, 5-t-butylbenzotriazole, 5-(1',1'-dimethylpropyl)-benzotriazole, 5-(1',1',3'-trimethylbutyl)benzotriazole, 5-n-octylbenzotriazole, and 5-(1',1',3',3'-tetramethylbutyl)benzotriazole; <10> The composition described in <13> the at least one metal corrosion inhibitor is in an amount of about 0.1% to about 0.5% by weight of the composition; <9> The composition described in <14> The at least one organic solvent comprises a solvent selected from the group consisting of a water-soluble alcohol, a water-soluble ketone, a water-soluble ester, and a water-soluble ether. <1> The composition described in <15> about 5% by weight to about 25% by weight of the at least one organic solvent, <1> The composition described in <16> The at least one amine compound comprises ethylenediamine, 1,2-diaminopropane, 1,3-diaminopropane, ethanolamine, or tetramethylammonium fluoride. <1> The composition described in <17> the at least one amine compound is in an amount of about 1% to about 5% by weight of the composition; <1> The composition described in <18> The water is in an amount of about 35% to about 98% by weight of the composition. <1> The composition described in <19> further comprising at least one acid. <1> The composition described in <20> the at least one acid comprises an inorganic acid or a sulfonic acid; <19> The composition described in <21> the at least one acid is in an amount of about 0.1% to about 5% by weight of the composition; <19> The composition described in <22> the said composition being substantially free of polymers, imines, hydrazines, or amidines; <1> Described in composition. <23> 1. A method comprising contacting a semiconductor substrate including TiSiN features with an etching composition to remove said TiSiN features, The composition comprises at least one oxidizing agent, at least one chelating agent, at least one organic solvent, at least one amine compound containing 1 to 6 carbon atoms, and water, and the composition has a pH of about 6.5 to about 9.5. method. <24> The method further comprises rinsing the semiconductor substrate with a rinsing solvent after the contacting step. <23> The method described below. <25> The method further comprises drying the semiconductor substrate after the rinsing step. <24> The method described below. <26> The HfOx in the semiconductor substrate is not substantially removed. <23> The method described below.

Claims

1. An etching composition for etching TiSiN, comprising: 1) at least one oxidizing agent in an amount of 0.1% to 30% by weight of the composition; 2) at least one chelating agent in an amount of 0.01% to 1% by weight of the composition; 3) at least one organic solvent in an amount of 1% to 30% by weight of the composition; 4) at least one amine compound containing 1 to 6 carbon atoms, comprising a diamine or a quaternary ammonium compound, in an amount of 0.1% to 5% by weight of the composition; and 5) water, and having a pH of 6.5 to 9.

5.

2. 10. The composition of claim 1 having a pH of from 7 to 9.

5.

3. The composition of claim 1 , wherein the at least one oxidizing agent comprises hydrogen peroxide.

4. The composition of claim 1, wherein the at least one oxidizing agent is in an amount of from 1% to 18% by weight of the composition.

5. The composition of claim 1 , wherein the at least one chelating agent comprises a polyaminopolycarboxylic acid.

6. 6. The composition of claim 5, wherein the polyaminopolycarboxylic acid is selected from the group consisting of mono- or polyalkylenepolyaminepolycarboxylic acids, polyaminoalkanepolycarboxylic acids, polyaminoalkanolpolycarboxylic acids, and hydroxyalkyletherpolyaminepolycarboxylic acids.

7. The polyaminopolycarboxylic acid is selected from the group consisting of butylenediaminetetraacetic acid, diethylenetriaminepentaacetic acid, ethylenediaminetetrapropionic acid, triethylenetetraminehexaacetic acid, 1,3-diamin 7. The composition of claim 6, wherein the hydroxybenzoate is selected from the group consisting of imino-2-hydroxypropane-N,N,N',N'-tetraacetic acid, propylenediaminetetraacetic acid, ethylenediaminetetraacetic acid, trans-1,2-diaminocyclohexanetetraacetic acid, ethylenediaminediacetic acid, ethylenediaminedipropionic acid, 1,6-hexamethylene-diamine-N,N,N',N'-tetraacetic acid, N,N-bis(2-hydroxybenzyl)ethylenediamine-N,N-diacetic acid, diaminopropanetetraacetic acid, iminodiacetic acid, 1,4,7,10-tetraazacyclododecane-tetraacetic acid, diaminopropanoltetraacetic acid, and (hydroxyethyl)ethylenediaminetriacetic acid.

8. The composition of claim 1, wherein the at least one chelating agent is in an amount of from 0.1% to 0.5% by weight of the composition.

9. 10. The composition of claim 1 further comprising at least one metal corrosion inhibitor.

10. 10. The composition of claim 9, wherein the at least one metal corrosion inhibitor comprises a substituted or unsubstituted benzotriazole.

11. 11. The composition of claim 10, wherein the at least one metal corrosion inhibitor comprises a benzotriazole optionally substituted with at least one substituent selected from the group consisting of an alkyl group, an aryl group, a halogen group, an amino group, a nitro group, an alkoxy group, and a hydroxyl group.

12. The substituted or unsubstituted benzotriazole may be benzotriazole, 5-aminobenzotriazole, 1-hydroxybenzotriazole, 5-phenylthiol-benzotriazole, 5-chlorobenzotriazole, 4-chlorobenzotriazole, 5-bromobenzotriazole, 4-bromobenzotriazole, 5-fluorobenzotriazole, 4-fluorobenzotriazole, naphthotriazole, tolyltriazole, 5-phenyl-benzotriazole, 5-nitrobenzotriazole, 4-nitrobenzotriazole, 2-(5-amino-pentyl)-benzotriazole, 1-amino-benzotriazole, 5-methyl-1H-benzotriazole, benzotriazole-5-carboxylic acid, 4-methylbenzotriazole, 4-ethylbenzotriazole, 5-ethylbenzotriazole, 4-propylbenzotriazole, 5-propylbenzotriazole, 4-isopropylbenzotriazole, 11. The composition of claim 10, wherein the benzotriazole is selected from the group consisting of benzotriazole, 5-isopropylbenzotriazole, 4-n-butylbenzotriazole, 5-n-butylbenzotriazole, 4-isobutylbenzotriazole, 5-isobutylbenzotriazole, 4-pentylbenzotriazole, 5-pentylbenzotriazole, 4-hexylbenzotriazole, 5-hexylbenzotriazole, 5-methoxybenzotriazole, 5-hydroxybenzotriazole, dihydroxypropylbenzotriazole, 1-[N,N-bis(2-ethylhexyl)aminomethyl]-benzotriazole, 5-t-butylbenzotriazole, 5-(1',1'-dimethylpropyl)-benzotriazole, 5-(1',1',3'-trimethylbutyl)benzotriazole, 5-n-octylbenzotriazole, and 5-(1',1',3',3'-tetramethylbutyl)benzotriazole.

13. 10. The composition of claim 9, wherein the at least one metal corrosion inhibitor is in an amount of from 0.1% to 0.5% by weight of the composition.

14. 10. The composition of claim 1, wherein the at least one organic solvent comprises a solvent selected from the group consisting of a water-soluble alcohol, a water-soluble ketone, a water-soluble ester, and a water-soluble ether.

15. 10. The composition of claim 1, comprising 5% to 25% by weight of said at least one organic solvent. thing.

16. The composition of claim 1, wherein the at least one amine compound comprises ethylenediamine, 1,2-diaminopropane, 1,3-diaminopropane, ethanolamine, or tetramethylammonium fluoride.

17. The composition of claim 1, wherein the at least one amine compound is in an amount of from 1% to 5% by weight of the composition.

18. The composition of claim 1, wherein the water is in an amount of from 35% to 98% by weight of the composition.

19. The composition of claim 1 further comprising at least one acid.

20. 20. The composition of claim 19, wherein the at least one acid comprises an inorganic acid or a sulfonic acid.

21. 20. The composition of claim 19, wherein the at least one acid is in an amount of 0.1% to 5% by weight of the composition.

22. 10. The composition of claim 1, which is free of polymers, imines, hydrazines, or amidines. composition.

23. 1. A method comprising contacting a semiconductor substrate including TiSiN features with an etching composition to remove said TiSiN features, The composition comprises at least one oxidizing agent, at least one chelating agent, at least one organic solvent, at least one amine compound containing 1 to 6 carbon atoms, and water, and the composition has a pH of 6.5 to 9.

5. method.

24. 24. The method of claim 23, further comprising, after contacting the semiconductor substrate including the TiSiN features with an etching composition to remove the TiSiN features, rinsing the semiconductor substrate with a rinsing solvent.

25. 25. The method of claim 24, further comprising drying the semiconductor substrate after rinsing the semiconductor substrate with a rinsing solvent.

26. 24. The method of claim 23, wherein at most 5 wt. % of HfOx in the semiconductor substrate is removed.

27. An etching composition for etching TiSiN, comprising: 1) at least one oxidizing agent in an amount of 0.1% to 30% by weight of the composition; 2) at least one chelating agent in an amount of 0.01% to 1% by weight of the composition; 3) at least one organic solvent in an amount of 1% to 30% by weight of the composition; 4) a compound of formula (II): HO-R in an amount of 0.5% to 5% by weight of the composition; １ -NH ２ (II) at least one alkanolamine (wherein R １ is a linear or branched C ２ ~C ６ alkyl); and 5) water, and having a pH of 6.5 to 9.

5.

28. 28. The composition of claim 27, wherein the at least one alkanolamine is ethanolamine.

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