Monoblock base for efficient heat transfer

Abstract

A substrate support for a substrate processing system includes a monoblock pedestal plate having a first surface configured to support a substrate and a second surface configured to mate with a pedestal stem. A groove is formed in the second surface of the monoblock pedestal plate. The groove has a serpentine shape and a depth of the groove extends upward from the second surface of the monoblock pedestal plate. A heater coil is disposed in the groove. A gap is defined between the heater coil and the second surface of the monoblock pedestal plate, and a gap material is disposed in the gap to seal the heater coil within the groove.

Description

[Technical Field]

[0001] [CROSS-REFERENCE TO RELATED APPLICATIONS] This application claims the benefit of U.S. Provisional Patent Application No. 63 / 033,979, filed June 3, 2020. The entire disclosures of the above related applications are incorporated herein by reference.

[0002] SUMMARY The present disclosure relates to a substrate support for a substrate processing system. [Background technology]

[0003] The background art discussion provided herein is intended to provide a general overview of the present disclosure. Work by the currently named inventors to the extent described in this background art section, as well as aspects of the description that may not otherwise be considered prior art at the time of filing, are not admitted, expressly or impliedly, as prior art against the present disclosure.

[0004] Substrate processing systems are used to perform processes such as deposition and etching of films on substrates, such as semiconductor wafers. For example, deposition may be performed to deposit conductive films, dielectric films, or other types of films using chemical vapor deposition (CVD), plasma-enhanced CVD (PECVD), atomic layer deposition (ALD), plasma-enhanced ALD (PEALD), and / or other deposition processes. During deposition, the substrate is placed on a substrate support (e.g., a pedestal), and one or more precursor gases may be supplied to the processing chamber during one or more process steps. In a PECVD or PEALD process, a plasma is used to activate chemical reactions in the processing chamber during deposition. Summary of the Invention

[0005] A substrate support for a substrate processing system includes a monoblock pedestal plate having a first surface configured to support a substrate and a second surface configured to mate with a pedestal stem. A groove is formed in the second surface of the monoblock pedestal plate. The groove has a serpentine shape and a depth of the groove extends upward from the second surface of the monoblock pedestal plate. A heater coil is disposed in the groove. A gap is defined between the heater coil and the second surface of the monoblock pedestal plate, and a gap material is disposed in the gap to seal the heater coil within the groove.

[0006] In other features, the monoblock base plate is constructed of a material including aluminum. The heater coil includes aluminum. The gap material includes aluminum. The monoblock base plate and the gap material are constructed of the same material. The thermal conductivity of the gap material is within 5% of the thermal conductivity of the monoblock base plate. The depth of the groove is 40-60% of the thickness of the monoblock base plate.

[0007] In other features, the substrate support further includes a recess formed in the second surface of the monoblock pedestal plate. The pedestal stem is disposed within the recess. The groove has at least one of an annular, a spiral, and an oscillating wave shape. The groove is machined, milled, and etched into the second surface of the monoblock pedestal plate. The heater coil has an electrically insulating and thermally conductive coating. The coating is a thermally conductive epoxy. The heater coil is friction stir welded into the groove.

[0008] A method for assembling a substrate support for a substrate processing system includes providing a monoblock pedestal plate having a first surface configured to support a substrate and a second surface configured to mate with a pedestal stem, and forming a groove in the second surface of the monoblock pedestal plate. The groove has a serpentine shape and a depth of the groove extends upward from the second surface of the monoblock pedestal plate. The method further includes disposing a heater coil in the groove. A gap is defined between the heater coil and the second surface of the monoblock pedestal plate and is filled with a gap material to seal the heater coil within the groove.

[0009] In other features, the monoblock base plate is constructed of a material including aluminum. The heater coil includes aluminum. The gap material includes aluminum. The thermal conductivity of the gap material is within 5% of the thermal conductivity of the monoblock base plate. The method further includes forming a recess in a second surface of the monoblock base plate and disposing a base stem within the recess. The method further includes at least one of machining, milling, and etching a groove in the second surface of the monoblock base plate. The method further includes friction stir welding a heater coil within the groove.

[0010] Further areas of applicability of the present disclosure will become apparent from the detailed description, claims, and drawings. The detailed description and specific examples are for purposes of illustration only and are not intended to limit the scope of the present disclosure. [Brief explanation of the drawings]

[0011] The present disclosure will become more fully understood from the detailed description and the accompanying drawings, wherein:

[0012] [Figure 1] FIG. 1 is a functional block diagram of an exemplary substrate processing system according to the present disclosure.

[0013] [Figure 2A]FIG. 2A illustrates an exemplary monoblock pedestal manufacturing process according to the present disclosure. [Figure 2B] FIG. 2B illustrates an exemplary monoblock pedestal manufacturing process according to the present disclosure. [Figure 2C] FIG. 2C illustrates an exemplary monoblock pedestal manufacturing process according to the present disclosure. [Figure 2D] FIG. 2D illustrates an exemplary monoblock pedestal manufacturing process according to the present disclosure.

[0014] [Figure 3A] FIG. 3A is a bottom view of a monoblock base according to the present disclosure.

[0015] [Figure 3B] FIG. 3B is an isometric view of a monoblock base and stem according to the present disclosure.

[0016] [Figure 3C] FIG. 3C is a bottom view of a monoblock base and stem according to the present disclosure.

[0017] [Figure 4] FIG. 4 illustrates steps of an exemplary method for manufacturing a monoblock base according to the present disclosure.

[0018] In the drawings, reference numbers may be reused to identify similar and / or identical elements. DETAILED DESCRIPTION OF THE INVENTION

[0019] Typically, a substrate support, such as a temperature control pedestal, includes multiple layers and materials. For example, the substrate support may include multiple metal and / or ceramic layers. One or more heater layers or coils may be embedded within a metal or ceramic layer, disposed between adjacent metal or ceramic layers, or the like. In some examples, the layers of the substrate support are welded or laminated together, and the heater coil is brazed (e.g., vacuum brazed) or welded to one of the layers. However, the welded interfaces between the layers of the substrate support and / or between the heater coil and the layers of the substrate support may deteriorate over time, causing poor thermal uniformity and inefficient heat transfer. Furthermore, assembling the substrate support using multiple layers increases manufacturing complexity, cost, and lead time.

[0020] The substrate support according to the present disclosure implements a single metal plate (e.g., a monoblock substrate support) constructed of a single material with an embedded heater coil. For example, the heater coil is friction stir welded into a channel formed in the plate. The monoblock substrate support has a uniform grain structure, resulting in improved thermal and mechanical performance, simplified manufacturing, and reduced cost compared to substrate supports including multiple welded layers.

[0021] Referring now to FIG. 1 , an example of a substrate processing system 100 according to the principles of the present disclosure is shown. While the above example relates to a PECVD system, other plasma-based substrate processing chambers may be used. The substrate processing system 100 includes a processing chamber 104 that houses the other components of the substrate processing system 100. The substrate processing system 100 includes a first (e.g., upper) electrode 108 and a substrate support, such as a pedestal 112, that includes a second (e.g., lower) electrode 116. A substrate 120 is disposed on the pedestal 112 between the upper electrode 108 and the lower electrode 116.

[0022] By way of example only, the upper electrode 108 may include a showerhead 124 for introducing and distributing process gases. Alternatively, the upper electrode 108 may include a conductive plate, and the process gases may be introduced in another manner. In some examples, the lower electrode 116 may correspond to a conductive electrode embedded in a non-conductive pedestal. Alternatively, the pedestal 112 may include an electrostatic chuck that includes a conductive plate that functions as the lower electrode 116.

[0023] A radio frequency (RF) generation system 126 generates and outputs an RF voltage to the upper electrode 108 and / or the lower electrode 116 upon activation of the plasma. In some examples, one of the upper electrode 108 and the lower electrode 116 may be at digital ground, analog ground, or floating potential. By way of example only, the RF generation system 126 may include one or more RF voltage generators 128 (e.g., a capacitively coupled plasma RF generator, a bias RF power generator, and / or other RF power generators), such as an RF generator 128 that generates an RF voltage supplied to the lower electrode 116 and / or the upper electrode 108 by one or more matching and distribution networks 130. For example, as shown, the RF generator 128 provides an RF and / or bias voltage to the lower electrode 116. The lower electrode 116 may alternatively or additionally receive power from another power source, such as a power source 132. In other examples, an RF voltage may be supplied to the upper electrode 108, or the upper electrode 108 may be connected to a ground reference.

[0024] The exemplary gas delivery system 140 includes one or more gas sources 144-1, 144-2, ..., and 144-N (collectively, gas sources 144), where N is an integer greater than 0. The gas sources 144 supply one or more gases (e.g., precursors, inert gases, etc.) and mixtures thereof. Vaporized precursors may also be used. At least one of the gas sources 144 may contain a gas (e.g., NH3, N2, etc.) used in the pre-treatment process of the present disclosure. The gas sources 144 are connected to a manifold 154 by valves 148-1, 148-2, ..., and 148-N (collectively, valves 148) and mass flow controllers 152-1, 152-2, ..., and 152-N (collectively, mass flow controllers 152). The output of the manifold 154 is provided to the processing chamber 104. By way of example only, the output of the manifold 154 is provided to the showerhead 124. In some examples, an optional ozone generator 156 may be located between the mass flow controller 152 and the manifold 154. In some examples, the substrate processing system 100 may include a liquid precursor delivery system 158. The liquid precursor delivery system 158 may be incorporated within the gas delivery system 140 as shown, or may be external to the gas delivery system 140. The liquid precursor delivery system 158 is configured to provide precursors that are liquid and / or solid at room temperature via a bubbler, direct liquid injection, vapor suction, etc.

[0025] The heater 160 may be connected to a heater coil 162 disposed on the pedestal 112 to heat the pedestal 112. The heater 160 may be used to control the temperature of the pedestal 112 and the substrate 120. The pedestal 112 according to the present disclosure comprises a monoblock plate with a heater coil 162 embedded therein, as described in more detail below.

[0026] Valves 164 and pumps 168 may be used to evacuate reactants from the processing chamber 104. A controller 172 may be used to control various components of the substrate processing system 100. By way of example only, the controller 172 may be used to control the flow of process gases, carrier gases, and precursor gases, plasma ignition and extinguishing, reactant removal, monitoring of chamber parameters, etc.

[0027] 2A-2D illustrate a manufacturing process for an exemplary monoblock pedestal 200 according to the present disclosure. As used herein, "monoblock" refers to a pedestal formed from a single block or casting. As shown in FIG. 2A, pedestal 200 is formed from a single block or plate 204 (i.e., a monoblock pedestal plate). For example, plate 204 comprises a metal material, such as aluminum, cast into a generally rectangular shape. The material of plate 204 has a uniform grain structure.

[0028] As shown in FIG. 2B , features corresponding to the final desired shape of the base 200 are formed in the plate 204. For example, a channel or groove 208 is formed in the second (e.g., lower) surface 210 of the plate 204. The groove 208 is generally serpentine and may have a circular or annular shape (i.e., in plan view), a spiral shape, an oscillating wave shape, or the like, as shown in more detail below in FIGS. 3A-3C . The groove 208 may be formed by machining, milling, etching, laser ablation, or the like, in the plate 204. The groove 208 (i.e., the vertical depth of the groove) extends upward from the lower surface 210 of the plate 204. For example, the depth of the groove 208 may correspond to 40-60% of the thickness of the plate 204. As shown, the depth of the groove 208 is approximately 50% (e.g., ±2%) of the thickness of the plate 204.

[0029] A first (e.g., upper) surface 212 of plate 204 corresponds to the upper support surface of pedestal 200. In other words, plate 204 is configured to support a substrate (e.g., substrate 120) directly on upper surface 212 without an additional layer disposed between the substrate and upper surface 212.

[0030] As shown in FIG. 2C , the heater coil 214 is disposed within the groove 208 (i.e., at the upper end of the groove 208). Because the groove 208 extends from the lower surface 210 of the plate 204 into an interior region of the plate 204, the heater coil 214 can be embedded directly within the plate 204 via the groove 208 extending from the lower surface 210. For example, the heater coil 214 is friction stir welded within the groove 208. Friction stir welding refers to a solid-state joining process that bonds two or more components (e.g., the plate 204 and the heater coil 214) by generating friction between them, without melting any of the components. In other examples, the heater coil 214 is attached within the groove 208 using another suitable welding or joining method, a thermal adhesive (e.g., a thermally conductive epoxy), or the like. The heater coil 214 may be constructed of the same material as the plate 204 or a different material. For example, the heater coil 214 may be constructed of aluminum and have an electrically insulating, thermally conductive coating. For example, the heater coil 214 may be coated with a thermally conductive epoxy. Although the heater coil 214 is shown as having a round cross-section, in some examples the heater coil 214 may have a flattened rectangular shape (e.g., the heater coil 214 may be formed as an electrical trace).

[0031] In other examples, the depth of the grooves 208 may be increased or decreased to correspondingly decrease or increase the distance of the heater coil 214 from the top surface 212 of the plate 204. In this manner, the distribution of heat from the heater coil 214 to the top surface 212 can be customized for each pedestal and / or process.

[0032] The heater coil 214 is configured to function as a resistive heater. In other words, power is provided to the heater coil 214 (e.g., via the heater 160) to pass a current through the heater coil 214. The current heats the heater coil 214, which distributes the heat throughout the plate 204. The monoblock plate 204, which includes a single material and a uniform grain structure, facilitates uniform distribution of heat from the heater coil 214 into the plate 204. For example, because the plate 204 is not constructed from multiple layers, the distribution of heat from the heater coil 214 is not hindered by interfaces between different layers or by adhesives or other intermediate materials disposed between different layers.

[0033] 2D , the gap 216 below the heater coil 214 (i.e., between the heater coil 214 and the lower surface 210) may be filled with a gap material 220. The gap material 220 seals the heater coil 214 within the groove 208. The gap material 220 may be composed of the same material as the plate 204, or a different material. For example, the gap material 220 may be composed of aluminum. If the gap material 220 is a different material than the plate 204, the gap material 220 may be selected to have the same or similar thermal and / or electrical conductivity properties as the plate 204. For example, the thermal conductivity of the gap material 220 is within 5% of the thermal conductivity of the plate 204.

[0034] As shown, pedestal 200 may include other features formed using the same process used to form groove 208. In some examples, all features are formed in the same process (e.g., the same machining or milling process). For example, an annular shelf or step 224 may be formed in top surface 212 of pedestal 200. In some examples, step 224 may be configured to support an edge ring. A recess 228 and a central opening 232 are formed in bottom surface 210. For example, recess 228 is configured to mate with a pedestal stem (e.g., as shown in FIGS. 3B and 3C ), and central opening 232 is configured to receive wiring connections, such as for powering heater coil 214 or providing RF power to pedestal 200. A lower annular edge 236 of the pedestal may be chamfered or beveled.

[0035] 3A, 3B, and 3C, an exemplary monoblock pedestal 300 according to the present disclosure is shown. FIG. 3A is a bottom view of the monoblock pedestal 300. Grooves 304 are formed on the underside of the pedestal 300. The shape or pattern of the grooves 304 is exemplary. In other examples, the grooves 304 may have different shapes. For example, the grooves 304 may have a circular, spiral, or oscillating wave (e.g., sinusoidal or zigzag) pattern. While only one groove 304 is shown, in other examples, the pedestal 300 may include two more grooves 304, each housing a different heater coil. FIG. 3B is an isometric view of the pedestal 300 including a stem 308. FIG. 3C is a bottom view of the pedestal 300 including the stem 308.

[0036] 4, an exemplary method 400 for manufacturing a monoblock pedestal (e.g., pedestal 200) according to the present disclosure begins at 404. At 408, a single block or plate is placed. At 412, a channel or groove is formed in the underside of the plate. For example, the groove may be machined, milled, etched, laser ablated, etc. At 416, a heater coil is placed in the groove. At 420, a gap below the heater coil in the groove is filled with a gap material. Method 400 ends at 424.

[0037] The foregoing description is merely exemplary in nature and is in no way intended to limit the disclosure, its application, or uses. The broad teachings of the present disclosure can be embodied in a variety of forms. Accordingly, while the present disclosure includes specific examples, the true scope of the disclosure should not be limited to such examples, as other variations will become apparent upon review of the drawings, the specification, and the following claims. It should be understood that one or more steps of a method may be performed in a different order (or simultaneously) without altering the principles of the present disclosure. Furthermore, although each of the embodiments is described above as having particular features, any one or more of these features described with respect to any embodiment of the present disclosure can be implemented in other embodiments and / or combined with any features of other embodiments, even if such combination is not explicitly described. In other words, the described embodiments are not mutually exclusive, and substituting one or more embodiments for one another remains within the scope of the present disclosure.

[0038] Spatial and functional relationships between elements (e.g., between modules, circuit elements, semiconductor layers, etc.) are described using various terms, including "connected," "engaged," "coupled," "adjacent," "next to," "on," "above," "below," and "disposed." In the above disclosure, when a relationship between a first element and a second element is described, unless explicitly described as "direct," the relationship may be a direct relationship where no other intervening elements exist between the first element and the second element, or an indirect relationship where one or more intervening elements (spatial or functional) exist between the first element and the second element. As used herein, the phrase "at least one of A, B, and C" should be interpreted to mean the logic (A or B or C) using a non-exclusive logical OR, and not to mean "at least one of A, at least one of B, and at least one of C."

[0039] In some implementations, the controller is part of a system, which may be part of the examples described above. Such systems may include semiconductor processing equipment, including one or more processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components (such as a wafer pedestal, gas flow system, etc.). These systems may be integrated with electronics for controlling system operation before, during, and after processing of a semiconductor wafer or substrate. The electronics, sometimes referred to as a "controller," may control various components or subparts of one or more systems. The controller may be programmed to control any of the processes disclosed herein, depending on the processing requirements and / or type of system. Such processes may include supplying process gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid supply settings, position and motion settings, wafer loading and unloading into the tool, and wafer loading and unloading into other transport tools and / or load locks connected or interfaced with the particular system.

[0040] Broadly, a controller may be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. Integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application-specific integrated circuits (ASICs), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). Program instructions may be instructions communicated to the controller in the form of various individual settings (or program files) that define operational parameters for performing a particular process on or for a semiconductor wafer or for a system. The operational parameters, in some embodiments, may be part of a recipe defined by a process engineer to accomplish one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0041] The controller, in some embodiments, may be part of or coupled to a computer that is integrated with, coupled to, or otherwise networked to the system, or a combination thereof. For example, the controller may be in the “cloud” or may be all or part of a fab host computer system. This allows for remote access of wafer processing. The computer may provide remote access to the system to monitor the current progress of a manufacturing operation, examine the history of past manufacturing operations, examine trends or performance criteria from multiple manufacturing operations, modify parameters of a current process, configure processing steps following a current process, or initiate a new process. In some examples, a remote computer (e.g., a server) can provide process recipes to the system over a network. Such a network may include a local network or the Internet. The remote computer may include a user interface that allows entry or programming of parameters and / or settings, which are then communicated from the remote computer to the system. In some examples, the controller receives instructions in the form of data. Such data identifies parameters for each of the processing steps performed during one or more operations. It should be understood that the parameters may be specific to the type of process being performed and the type of tool the controller is configured to interface with or control. Thus, as described above, the controller may be distributed, such as by including one or more individual controllers networked together and cooperating toward a common purpose, such as the processes and controls described herein. An example of a distributed controller for such purposes would include one or more integrated circuits on the chamber that are located remotely (e.g., at the platform level or as part of a remote computer) and communicate with one or more integrated circuits that are coupled to control the processes on the chamber.

[0042] Exemplary systems may include, but are not limited to, a plasma etch chamber or module, a deposition chamber or module, a spin rinse chamber or module, a metal plating chamber or module, a cleaning chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, a tracking chamber or module, and any other semiconductor processing system associated with or usable for the fabrication and / or manufacturing of semiconductor wafers.

[0043] As described above, depending on the process step or steps being performed by the tool, the controller may communicate with one or more of the other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, nearby tools, tools located throughout the factory, a main computer, another controller, or tools used in material transport to and from tool locations and / or load ports of wafers within a semiconductor fabrication factory. The present disclosure can also be realized as the following application examples. <Application example 1> 1. A substrate support for a substrate processing system, comprising: a monoblock base plate having a first surface configured to support a substrate and a second surface configured to mate with the base stem; a groove formed in the second surface of the monoblock base plate, the groove having a serpentine shape, and a depth of the groove extending upward from the second surface of the monoblock base plate; a heater coil disposed in the groove, wherein (i) a gap is defined between the heater coil and the second surface of the monoblock base plate, and (ii) a gap material is disposed in the gap to seal the heater coil within the groove. <Application example 2> The substrate support according to Application Example 1, A substrate support, wherein the monoblock base plate is constructed from a material comprising aluminum. <Application example 3> The substrate support according to Application Example 1, The substrate support, wherein the heater coil comprises aluminum. <Application Example 4> The substrate support according to Application Example 1, The substrate support, wherein the gap material comprises aluminum. <Application example 5> The substrate support according to Application Example 1, A substrate support wherein the monoblock base plate and the gap material are constructed of the same material. <Application Example 6> The substrate support according to Application Example 1, A substrate support wherein the thermal conductivity of the gap material is within 5% of the thermal conductivity of the monoblock pedestal plate. <Application Example 7> The substrate support according to Application Example 1, A substrate support, wherein the depth of the groove is 40 to 60% of the thickness of the monoblock base plate. <Application Example 8> The substrate support according to Application Example 1, The substrate support further includes a recess formed in the second surface of the monoblock pedestal plate, the pedestal stem being disposed within the recess. <Application Example 9> The substrate support according to Application Example 1, The substrate support, wherein the groove has at least one of a circular, a spiral, and an oscillating wave shape. <Application Example 10> The substrate support according to Application Example 1, The groove is at least one of machined, milled, and etched into the second surface of the monoblock base plate. <Application Example 11> The substrate support according to Application Example 1, The heater coil has an electrically insulating and thermally conductive coating. <Application Example 12> The substrate support according to Application Example 11, A substrate support wherein the coating is a thermally conductive epoxy. <Application Example 13> The substrate support according to Application Example 1, The heater coil is friction stir welded into the groove. <Application Example 14> 1. A method of assembling a substrate support for a substrate processing system, comprising: providing a monoblock pedestal plate having a first surface configured to support a substrate and a second surface configured to mate with the pedestal stem; forming a groove in the second surface of the monoblock base plate, the groove having a serpentine shape, and a depth direction of the groove extending upward from the second surface of the monoblock base plate; a heater coil disposed within the groove, a gap being defined between the heater coil and the second surface of the monoblock base plate; filling the gap with a gap material to seal the heater coil within the groove. A method comprising: <Application Example 15> The method according to Application Example 14, The method wherein the monobloc base plate is constructed from a material including aluminum. <Application Example 16> The method according to Application Example 14, The method, wherein the heater coil comprises aluminum. <Application Example 17> The method according to Application Example 14, The method, wherein the interstitial material comprises aluminum. <Application Example 18> The method according to Application Example 14, The method wherein the thermal conductivity of the gap material is within 5% of the thermal conductivity of the monoblock base plate. <Application Example 19> The method according to Application Example 14, further comprising: forming a recess in the second surface of the monoblock base plate and positioning the base stem within the recess. <Application Example 20> The method according to Application Example 14, further comprising: the method comprising at least one of machining, milling, and etching the groove into the second surface of the monoblock base plate.

Claims

1. 1. A substrate support for a substrate processing system, comprising: a monoblock pedestal plate having a first surface configured to support a substrate and a second surface configured to mate with the pedestal stem; a groove formed in the second surface of the monoblock base plate, the groove having a serpentine shape, the groove having a depth extending upward from the second surface of the monoblock base plate and having a depth of 40-60% of a thickness of the monoblock base plate; a heater coil disposed in the groove, wherein (i) a gap is defined between the heater coil and the second surface of the monoblock base plate, and (ii) a gap material is disposed in the gap to seal the heater coil within the groove, and the heater coil is coated with a thermally conductive epoxy.

2. 10. The substrate support of claim 1, A substrate support, wherein the monoblock base plate is constructed from a material comprising aluminum.

3. 10. The substrate support of claim 1, The substrate support, wherein the heater coil comprises aluminum.

4. 10. The substrate support of claim 1, The substrate support, wherein the gap material comprises aluminum.

5. 10. The substrate support of claim 1, A substrate support wherein the monoblock base plate and the gap material are constructed of the same material.

6. 10. The substrate support of claim 1, A substrate support wherein the thermal conductivity of the gap material is within 5% of the thermal conductivity of the monoblock pedestal plate.

7. 10. The substrate support of claim 1, The substrate support further includes a recess formed in the second surface of the monoblock pedestal plate, the pedestal stem being disposed within the recess.

8. 10. The substrate support of claim 1, The substrate support, wherein the groove has at least one of a circular, a spiral, and an oscillating wave shape.

9. 10. The substrate support of claim 1, The groove is at least one of machined, milled, and etched into the second surface of the monoblock base plate.

10. 10. The substrate support of claim 1, The heater coil is friction stir welded into the groove.

11. 1. A method of assembling a substrate support for a substrate processing system, comprising: providing a monoblock pedestal plate having a first surface configured to support a substrate and a second surface configured to mate with the pedestal stem; forming a groove in the second surface of the monoblock base plate, the groove having a serpentine shape, a depth direction of the groove extending upward from the second surface of the monoblock base plate, and a depth of the groove being 40 to 60% of a thickness of the monoblock base plate; disposing a heater coil coated with thermally conductive epoxy within the groove, a gap being defined between the heater coil and the second surface of the monoblock base plate; filling the gap with a gap material to seal the heater coil within the groove. A method comprising:

12. 12. The method of claim 11, The method wherein the monobloc base plate is constructed from a material including aluminum.

13. 12. The method of claim 11, The method, wherein the heater coil comprises aluminum.

14. 12. The method of claim 11, The method, wherein the interstitial material comprises aluminum.

15. 12. The method of claim 11, The method wherein the thermal conductivity of the gap material is within 5% of the thermal conductivity of the monoblock base plate.

16. 12. The method of claim 11 further comprising: forming a recess in the second surface of the monoblock base plate and positioning the base stem within the recess.

17. 12. The method of claim 11 further comprising: the method comprising at least one of machining, milling, and etching the groove into the second surface of the monoblock base plate.

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