Semiconductor device and method for manufacturing the same

Abstract

To provide a semiconductor device that improves temperature detection precision, and a method of manufacturing the same.SOLUTION: In a semiconductor device, a temperature sense part 178 has: a plurality of temperature sense diode parts 173 which each have an anode part 175 provided above a top surface 21 of a semiconductor substrate and a cathode part 177 connected to the anode part 175, and are connected in series; an N type resistance part 179 which is electrically connected to the temperature sense diode parts 173; anode wiring 180; a connection part 181; and cathode wiring 182. The total of resistance values of the cathode part 177 and the resistance part 179 is larger than the resistance value of the anode part 175.SELECTED DRAWING: Figure 3A

Description

[Technical Field]

[0001] The present invention relates to a semiconductor device and a method for manufacturing the semiconductor device. [Background technology]

[0002] Traditionally, Metal Oxide Semiconductor BACKGROUND ART There is known a technique of providing a temperature sensor on a semiconductor substrate on which semiconductor elements such as field effect transistors (MOSFETs) are formed (see, for example, Patent Documents 1 and 2). Patent Document 1 Japanese Patent Application Laid-Open No. 7-153920 Patent Document 2: Japanese Patent Application Laid-Open No. 2010-129707 Summary of the Invention [Problem to be solved by the invention]

[0003] There is a demand for improved accuracy in temperature detection in semiconductor devices. [Means for solving the problem]

[0004] A first aspect of the present invention provides a semiconductor device comprising: a temperature sensor section provided above a front surface of a semiconductor substrate, the temperature sensor section having a temperature sensor diode section and an N-type resistor section electrically connected to the temperature sensor diode section, the temperature sensor diode section having an anode section and a cathode section connected to the anode section, a plurality of temperature sensor diode sections connected in series, and a total resistance value of the cathode section and the resistor section being greater than a resistance value of the anode section.

[0005] The resistor may be N-type polysilicon.

[0006] The plurality of temperature sensing diode sections connected in series may further have an anode wiring electrically connected to the anode section and a cathode wiring electrically connected to the cathode section, and the resistance section may be provided between the anode wiring and the plurality of temperature sensing diode sections connected in series.

[0007] The plurality of temperature sensing diode sections connected in series may further have an anode wiring electrically connected to the anode section and a cathode wiring electrically connected to the cathode section, and the resistance section may be provided between the cathode wiring and the plurality of temperature sensing diode sections connected in series.

[0008] The plurality of temperature sensing diode sections connected in series may further have an anode wiring electrically connected to the anode section and a cathode wiring electrically connected to the cathode section, and the resistance section may have an anode-side resistance section provided between the anode wiring and the plurality of temperature sensing diode sections connected in series, and a cathode-side resistance section provided between the cathode wiring and the plurality of temperature sensing diode sections connected in series.

[0009] The resistor portion may be provided between the temperature sensing diode portions.

[0010] The resistor portion may be provided in communication with the cathode portion.

[0011] The anode portion and the cathode portion may be arranged on a plane parallel to the front surface of the semiconductor substrate.

[0012] The doping concentration of the resistor is 1E18cm -3 More than 1E20cm -3 It may be less than.

[0013] The doping concentration of the temperature sensing diode is 1E18cm -3 More than 1E20cm -3 It may be less than.

[0014] The doping concentration of the resistor portion may be equal to or less than the doping concentration of the cathode portion.

[0015] The doping concentration of the resistor portion may be the same as the doping concentration of the cathode portion.

[0016] The semiconductor device may further include a first insulating film provided on the front surface of the semiconductor substrate, a conductive layer provided on the first insulating film, and a second insulating film covering the conductive layer, and the temperature sensing unit may be provided on the second insulating film.

[0017] The conductive layer may be N-type polysilicon.

[0018] The doping concentration of the conductive layer is 1E20 cm -3 It may be more than that.

[0019] The conductive layer may have a plurality of regions that are arranged corresponding to the temperature sensing diode portions and the resistor portions and are separated from one another.

[0020] A second aspect of the present invention provides a method for manufacturing a semiconductor device, comprising the step of forming, above a front surface of a semiconductor substrate, a temperature sensor unit having a plurality of temperature sensor diode units connected in series, each having an anode unit and a cathode unit connected to the anode unit, and an N-type resistor unit electrically connected to the temperature sensor diode unit, wherein the sum of the resistance values ​​of the cathode unit and the resistor unit is greater than the resistance value of the anode unit.

[0021] The doping concentration of the resistor portion is the same as the doping concentration of the cathode portion, and the resistor portion and the cathode portion may be formed in the same process.

[0022] The doping concentration of the resistor section is different from the doping concentration of the cathode section, and the resistor section may be formed without ion implantation from N-type polysilicon having a lower doping concentration than the cathode section.

[0023] The above summary of the invention does not list all of the features of the present invention, and subcombinations of these features may also be inventions. [Brief explanation of the drawings]

[0024] [Figure 1] 1 shows an example of a top view of a semiconductor device 100 according to an embodiment. [Figure 2] 1 shows an example of an XZ cross-sectional view of the semiconductor device 100. FIG. [Figure 3A] 10 shows an example of a top view of a temperature sensing unit 178 according to an embodiment. [Figure 3B] 3B shows an example of a cross-sectional view taken along line AA' in FIG. 3A. [Figure 3C] 3B shows an example of a cross-sectional view taken along line BB' in FIG. 3A. [Figure 3D] An example of an equivalent circuit of the semiconductor device 100 is shown. [Figure 4A] FIG. 10 shows a top view of a temperature sensing diode portion according to a comparative example. [Figure 4B] 1 shows an equivalent circuit of a semiconductor device according to a comparative example. [Figure 5A] 1 shows the temperature dependency of the forward voltage of the temperature sensing diode section 173. [Figure 5B] The temperature dependence of P-type and N-type polysilicon resistance is shown. [Figure 5C] 10 shows the temperature dependency of the forward voltage of the temperature sensing diode section 173 connected to the P-type resistor section. [Figure 5D] 10 shows the temperature dependency of the forward voltage of the temperature sensing diode section 173 connected to the N-type resistor section. [Figure 6A] 10 shows another example of a top view of the temperature sensing unit 178 according to the embodiment. [Figure 6B] 1 shows another example of an equivalent circuit of the semiconductor device 100. [Figure 6C] 10 shows another example of a top view of the temperature sensing unit 178 according to the embodiment. [Figure 7A] 10 shows another example of a top view of the temperature sensing unit 178 according to the embodiment. [Figure 7B] 7B shows an example of a cross-sectional view taken along line BB' in FIG. 7A. [Figure 7C] 7B shows another example of a cross-sectional view taken along the line BB' in FIG. 7A. [Figure 7D] 7B shows yet another example of the cross-sectional view taken along line BB' in FIG. 7A. [Figure 7E] 7B shows yet another example of the cross-sectional view taken along line BB' in FIG. 7A. [Figure 8A]10 shows another example of a top view of the temperature sensing unit 178 according to the embodiment. [Figure 8B] 1 shows another example of an equivalent circuit of the semiconductor device 100. [Figure 9A] 10 shows another example of a top view of the temperature sensing unit 178 according to the embodiment. [Figure 9B] 1 shows another example of an equivalent circuit of the semiconductor device 100. [Figure 10A] 1 shows an example of a top view of a semiconductor device 200 according to an embodiment. [Figure 10B] 1 shows an example of an XZ cross-sectional view of a semiconductor device 200. FIG. [Figure 11A] An example of a method for manufacturing the semiconductor device 100 will be described. [Figure 11B] An example of a method for manufacturing the semiconductor device 100 will be described. [Figure 12] Another example of the method for manufacturing the semiconductor device 100 will be described. DETAILED DESCRIPTION OF THE INVENTION

[0025] The present invention will be described below through embodiments of the invention, but the following embodiments do not limit the scope of the invention according to the claims. Furthermore, not all of the combinations of features described in the embodiments are necessarily essential to the solution of the invention.

[0026] In this specification, one side of a semiconductor substrate in a direction parallel to the depth direction is referred to as the "front" or "top," and the other side is referred to as the "back" or "bottom." Of the two main surfaces of a substrate, layer, or other member, one is referred to as the top surface, and the other is referred to as the bottom surface. The directions of "front," "top," "back," and "bottom" are not limited to the direction of gravity or the directions when the semiconductor device is mounted.

[0027] In this specification, technical matters may be explained using orthogonal coordinate axes of the X-axis, Y-axis, and Z-axis. The orthogonal coordinate axes merely identify the relative positions of components and do not limit a specific direction. For example, the Z-axis does not limit the height direction relative to the ground. Note that the +Z-axis direction and the -Z-axis direction are opposite directions. When the Z-axis direction is written without specifying positive or negative, it means a direction parallel to the +Z-axis and -Z-axis. In this specification, the view from the +Z-axis direction may be referred to as a top view.

[0028] In this specification, when we say "same" or "equal," it may also include cases where there is an error due to manufacturing variations, etc. The error is, for example, within 10%.

[0029] In this specification, the conductivity type of a doped region doped with impurities is described as P-type or N-type. However, the conductivity type of each doped region may be opposite. Furthermore, in this specification, P+ type or N+ type means a doping concentration higher than P-type or N-type, and P-type or N-type means a doping concentration lower than P-type or N-type.

[0030] In this specification, the doping concentration refers to the concentration of an impurity activated as a donor or an acceptor. In this specification, the difference in concentration between the donor and the acceptor may be referred to as the concentration of the larger donor or acceptor. This concentration difference can be measured by voltage-capacitance measurement (CV). Alternatively, the carrier concentration measured by spreading resistance measurement (SR) may be used as the donor or acceptor concentration. Furthermore, when the donor or acceptor concentration distribution has a peak, the peak value may be used as the donor or acceptor concentration in that region. In cases where the donor or acceptor concentration in a region where the donor or acceptor is present is approximately uniform, the average value of the donor or acceptor concentration in that region may be used as the donor or acceptor concentration.

[0031] 1 shows an example of a top view of a semiconductor device 100 according to an embodiment. The semiconductor device 100 includes a semiconductor substrate 10, a gate pad 50, a current sense pad 172, a temperature sensing unit 178, and an anode pad 174 and a cathode pad 176 electrically connected to the temperature sensing unit 178.

[0032] The semiconductor substrate 10 has an edge 102. In this specification, the direction of one edge 102-1 of the semiconductor substrate 10 in the top view of FIG. 1 is defined as the X-axis, and the direction perpendicular to the X-axis is defined as the Y-axis. In this example, the X-axis is taken in the direction of the edge 102-1. Furthermore, a direction perpendicular to the X-axis direction and the Y-axis direction, which forms a right-handed system, is referred to as the Z-axis direction. In this example, the temperature sensor 178 is provided in the +Z-axis direction of the semiconductor substrate 10.

[0033] The semiconductor substrate 10 is made of a semiconductor material such as silicon or a compound semiconductor. The side of the semiconductor substrate 10 on which the temperature sensing unit 178 is provided is referred to as the front surface, and the opposite surface is referred to as the back surface. In this specification, the direction connecting the front surface and the back surface of the semiconductor substrate 10 is referred to as the depth direction. In this example, the semiconductor substrate 10 has a substantially rectangular shape on the front surface, but may have a different shape.

[0034] The semiconductor substrate 10 has an active portion 120 on its front surface. The active portion 120 is a region through which a main current flows in the depth direction between the front and back surfaces of the semiconductor substrate 10 when the semiconductor device 100 is turned on. A gate conductive portion 44 (described later) of the active portion 120 is connected to a gate pad 50 by a gate runner.

[0035] The active section 120 includes a MOSFET (Metal Oxide Semiconductor Field Effect Transistor). Metal Oxide Semiconductor A transistor section 70 such as a field effect transistor may be provided.

[0036] On the front surface, semiconductor device 100 has a P-type well region 130 outside active section 120. Further outside, it has an edge termination structure. The edge termination structure has, for example, a guard ring provided in an annular shape surrounding active section 120, a field plate, or a structure combining these.

[0037] The temperature sensing unit 178 may be disposed in a wide portion provided near the center of the front surface of the semiconductor substrate 10. The active portion 120 is not provided in the wide portion. When the active portion 120 of the semiconductor substrate 10 is integrated, the center of the semiconductor substrate 10 is more likely to heat up due to heat generated by the switching elements formed in the active portion 120. By providing the temperature sensing unit 178 in the wide portion near the center, the temperature of the transistor portion 70 can be monitored. This makes it possible to prevent the transistor portion 70 from overheating beyond the junction temperature Tj, which is the normal operating temperature range.

[0038] The temperature sensing unit 178 has a plurality of temperature sensing diode units, which will be described later. Each temperature sensing diode unit has an anode wiring 180 electrically connected to an anode unit and a cathode wiring 182 electrically connected to a cathode unit. The anode wiring 180 and the cathode wiring 182 are wirings containing a metal such as aluminum or an alloy containing aluminum.

[0039] The anode pad 174 and the cathode pad 176 are provided in the outer peripheral region of the active section 120. The anode pad 174 is connected to the temperature sensor section 178 via an anode wiring 180. The cathode pad 176 is connected to the temperature sensor section 178 via a cathode wiring 182. In FIG. 1, the anode pad 174 and the cathode pad 176 are provided side by side along the edge 102-3, and the anode wiring 180 and the cathode wiring 182 extend in the X-axis direction. The anode pad 174 and the cathode pad 176 are electrodes containing a metal such as aluminum or an alloy containing aluminum.

[0040] The current sense pad 172 is provided in the peripheral region of the active section 120. The current sense pad 172 may be aligned with the gate pad 50, the anode pad 174, and the cathode pad 176 along the Y-axis direction (edge ​​102-3 in FIG. 1 ). The current sense pad 172 is electrically connected to the current sense section 110. The current sense pad 172 is an example of a front surface electrode. The current sense section 110 has a structure similar to that of the transistor section 70 of the active section 120, and simulates the operation of the transistor section 70. A current proportional to the current flowing through the transistor section 70 flows through the current sense section 110. This makes it possible to monitor the current flowing through the transistor section 70.

[0041] A gate trench portion is provided in the current sense portion 110. The gate trench portion of the current sense portion 110 is electrically connected to the gate runner. Unlike the transistor portion 70, the gate trench portion may have a portion where a source region 12, which will be described later, is not provided.

[0042] Fig. 2 shows an example of an XZ cross-sectional view of the semiconductor device 100. Fig. 2 shows an example of an XZ cross-sectional view of an element structure in a transistor section 70 of an active section 120. In this example, the active section 120 may be provided with the transistor section 70 on the entire surface.

[0043] The transistor section 70 has a plurality of gate trench sections 40 on the front surface 21 of the semiconductor substrate 10. The semiconductor substrate 10 also has mesa sections 60 between the plurality of trench sections. The mesa sections 60 are connected to the source electrode 52 via contact holes 54.

[0044] The gate trench portion 40 has a gate conductive portion 44 made of a conductor such as metal and a gate insulating film 42. The gate conductive portion 44 is insulated from the source electrode 52 by an interlayer insulating film 38. The gate conductive portion 44 is electrically connected to a gate pad 50 by a gate runner and set to a gate potential. The gate conductive portion 44 corresponds to the gate electrode of the transistor portion 70. As an example, the gate potential may be higher than the source potential.

[0045] The transistor section 70 has, from the front surface 21 side of the semiconductor substrate 10, a source region 12 of a first conductivity type, a base region 14 of a second conductivity type, a drift region 18 of the first conductivity type, and a drain region 22 of the first conductivity type. The source region 12 may be provided across the entire active section 120 on the front surface 21 of the semiconductor substrate 10, and may be provided in contact with the gate trench section 40. Between adjacent source regions 12 in the active section 120, the base region 14 may be exposed on the front surface 21. As a result, the base region 14 and the source region 12 are connected to the source electrode 52 via a contact hole 54.

[0046] In addition, in the mesa portion 60, a second conductivity type contact region (not shown) may be provided between adjacent source regions 12 sandwiching the base region 14, and the contact region and the source electrode 52 may be connected to the source electrode 52 via a contact hole 54.

[0047] As an example, the source region 12 has an N+ type polarity. That is, in this example, the first conductivity type is N type and the second conductivity type is P type, but the first conductivity type may be P type and the second conductivity type may be N type. In this case, the conductivity types of the substrate, layer, region, etc. in each example will be opposite polarities.

[0048] In this example, the base region 14 has P-type polarity. When the gate conductive portion 44 is set to a gate potential, electrons are attracted to the gate trench portion 40 in the base region 14. An N-type channel is formed in the region of the base region 14 that contacts the gate trench portion 40, and the base region 14 operates as a transistor.

[0049] An N- type drift region 18 is provided below the base region 14. An N+ type drain region 22 is provided below the drift region 18.

[0050] The lower surface of the drain region 22 corresponds to the back surface 23 of the semiconductor substrate 10. A drain electrode 24 is provided on the back surface 23 of the semiconductor substrate 10. The drain electrode 24 is made of a conductive material such as a metal, or is formed by laminating conductive materials such as a metal.

[0051] 3A shows an example of a top view of a temperature sensing unit 178 according to an embodiment. The temperature sensing unit 178 of this example is provided above the front surface 21 of the semiconductor substrate 10. The temperature sensing unit 178 has a temperature sensing diode unit 173 connected in series and an N-type resistor unit 179 electrically connected to the temperature sensing diode unit 173.

[0052] The temperature sensing diode section 173 has a P-type anode section 175 and an N-type cathode section 177 connected (joined) to the anode section 175. The anode section 175 may be polysilicon doped with boron (B). The cathode section 177 may be polysilicon doped with arsenic (As), phosphorus (P), or the like. The doping concentrations of the anode section 175 and the cathode section 177 are 1E18 cm -3 More than 1E20cm -3 The anode portion 175 and the cathode portion 177 have approximately the same dimensions. In Figure 3A, four temperature sensing diode portions 173 are connected in series along the X-axis direction.

[0053] The resistor section 179 in this example is made of N-type polysilicon. The resistor section 179 may be made of polysilicon doped with arsenic (As), phosphorus (P), or the like. The doping concentration of the resistor section 179 is 1E18 cm -3 More than 1E20cm -3 It may be less than.

[0054] In this example, the doping concentration of the resistor portion 179 is equal to or lower than the doping concentration of the cathode portion 177. The doping concentration of the resistor portion 179 may be the same as the doping concentration of the cathode portion 177.

[0055] The resistance portion 179 of this example is provided between the cathode wiring 182 and the temperature sensing diode portion 173, and is connected in series with the temperature sensing diode portion 173. The resistance portion 179 has approximately the same dimensions as the anode portion 175 and the cathode portion 177.

[0056] A connection portion 181 is provided above the temperature sensing portion 178 to connect adjacent temperature sensing diode portions 173 and resistor portions 179. In Fig. 3A, the connection portion 181 is provided above the vicinity of the ends in the -Y axis direction of the temperature sensing diode portion 173 and resistor portion 179. The connection portion 181 is a member containing a metal such as aluminum or an alloy containing aluminum.

[0057] The temperature sensing diode portions 173 and the resistor portions 179 are connected to the connection portions 181 via contact holes 56 formed through the interlayer insulating film 38, and are connected to each other via the connection portions 181. The interlayer insulating film 38 is omitted from FIG. 3A.

[0058] The temperature sensing unit 178 is connected to the anode pad 174 and the cathode pad 176 via an anode wiring 180 and a cathode wiring 182, respectively. In FIG. 3A , the anode wiring 180 is connected to the anode portion 175 of the temperature sensing diode unit 173 that is farthest from the anode pad 174 (in the +X-axis direction) via a contact hole 54 that penetrates the interlayer insulating film 38. The cathode wiring 182 is connected to the resistor portion 179 via a contact hole 55 that penetrates the interlayer insulating film 38, and the resistor portion 179 is connected to the cathode portion 177 of the nearest temperature sensing diode unit 173 via a contact hole 56 and a connection portion 181.

[0059] 3B shows an example of an A-A' cross-sectional view of FIG. 3A. The A-A' cross-sectional view is an XZ cross-sectional view passing through the anode wiring 180 and the temperature sensing unit 178. FIG. 3C shows an example of a B-B' cross-sectional view of FIG. 3A. The B-B' cross-sectional view is an XZ cross-sectional view passing through the cathode wiring 182 and the temperature sensing unit 178.

[0060] The temperature sensing portion 178 of this example is provided above the well region 130. The anode portion 175 and the cathode portion 177 are arranged on a plane parallel to the front surface 21 of the semiconductor substrate 10. The resistor portion 179, the anode portion 175, and the cathode portion 177 of this example are provided on a first insulating film 36 provided on the front surface 21 of the semiconductor substrate 10, and are covered from above and on the sides by the interlayer insulating film 38. The first insulating film 36 may be formed of the same oxide film as the gate insulating film 42.

[0061] The contact holes 54 and 55 are aligned with the contact hole 56 in the Y-axis direction. Figure 3A In the example, contact holes 54, 55, and 56 are aligned in the direction in which the cathode wiring 182 extends.

[0062] FIG. 3D shows an example of an equivalent circuit of the semiconductor device 100. FIG. 3D shows an example of the element structure of the active section 120 and the circuit configuration of the temperature sensing section 178 shown in FIG. 3A. The two are insulated by an interlayer insulating film 38. The element structure of the active section 120 in this example is a MOSFET ( Metal Oxide Semiconductor field-effect transistor).

[0063] In this example, multiple temperature sensing diode sections 173 and resistor section 179 are connected in series between an anode pad 174 and a cathode pad 176. The temperature sensing diode section 173 may be a Zener diode composed of an anode section 175 and a cathode section 177.

[0064] The anode wiring 180 connects the anode pad 174 and the anode portion 175 of the temperature sensing diode portion 173, and the cathode wiring 182 connects the cathode pad 176 and the resistor portion 179. In this example, the resistor portion 179 is provided between the cathode wiring 182 and the temperature sensing diode portion 173.

[0065] In the circuit between the anode pad 174 and the cathode pad 176, the resistance of the metal wiring (anode wiring 180, cathode wiring 182, and connection portion 181) is smaller than the resistance of the polysilicon (resistance portion 179, anode portion 175, and cathode portion 177) by two orders of magnitude. Therefore, the resistance of this circuit substantially depends on the resistance of the polysilicon.

[0066] The resistance of polysilicon depends on its dimensions and impurity doping concentration. As described above, the dimensions of the resistor section 179, the anode section 175, and the cathode section 177 are approximately the same. In the temperature sensing section 178 of this example, the resistance value of the N-type region is greater than the resistance value of the P-type region. That is, the sum of the resistance values ​​of the cathode section 177 and the resistor section 179 is greater than the resistance value of the anode section 175.

[0067] 4A shows a top view of a temperature sensing diode section according to a comparative example. The semiconductor device according to the comparative example has a common configuration with the semiconductor device 100 according to the embodiment, except that the semiconductor device according to the comparative example does not have an N-type resistor section electrically connected to the temperature sensing diode section. Therefore, in the description of the comparative example, elements that share the same configuration and function as the semiconductor device 100 are denoted by the same reference numerals, and their description will be omitted.

[0068] In the comparative example, multiple temperature sensing diode units 173 are connected in series. The multiple temperature sensing diode units 173 are connected to an anode pad 174 and a cathode pad 176 via an anode wiring 180 and a cathode wiring 182, respectively. In FIG. 4A , the anode wiring 180 is connected to the anode unit 175 of the temperature sensing diode unit 173 that is farthest from the anode pad 174 (in the +X-axis direction) via a contact hole 54 that penetrates the interlayer insulating film 38. The cathode wiring 182 is connected to the cathode unit 177 of the temperature sensing diode unit 173 that is closest to the cathode pad 176 (in the −X-axis direction) via a contact hole 55 that penetrates the interlayer insulating film 38.

[0069] 4B shows an equivalent circuit of a semiconductor device according to a comparative example. In the comparative example, the resistance of the circuit between the anode pad 174 and the cathode pad 176 substantially depends on the resistance of the plurality of temperature sensing diode sections 173. Furthermore, in the plurality of temperature sensing diode sections 173, the resistance of the N-type region and the resistance of the P-type region are approximately the same. That is, the resistance of the cathode section 177 and the resistance of the anode section 175 are approximately the same.

[0070] 5A shows the temperature dependence of the forward voltage of the temperature sensing diode section 173. In FIG. 5A, the horizontal axis represents the forward voltage V F [V], the vertical axis is the forward current I F The graph shows the forward voltage V F The temperature sensing diode 173 flows a forward current I F is the voltage that drops when current flows.

[0071] The forward voltage V of the temperature sensing diode part 173 formed by polysilicon F The forward current at the reference temperature is I0 [A] and the forward voltage is V. F1 [V], in the temperature range higher than the reference temperature, the forward voltage V F1L is V F1 In the temperature range lower than the reference temperature, the forward voltage V F1H is V F1 is greater than.

[0072] Forward voltage V F1 The amount of change from ΔV F is converted into the amount of temperature change and monitored. F When ΔV exceeds a predetermined threshold, it is determined that the amount of heat generated has exceeded the guaranteed value. F is generally small, 0.6 to 0.8 V, so multiple temperature sensing diode units 173 are connected in series, and ΔV F A method is used to improve detection sensitivity by measuring the total value of

[0073] ΔV of the plurality of temperature sensing diode sections 173 F In the method of measuring the total value of each ΔV F However, in recent years, the semiconductor device 100 has been used in applications requiring high-precision temperature detection in high-temperature areas such as the engine compartment of a vehicle. Furthermore, in view of increasing demands for safety, there is a demand for improved temperature detection accuracy in the semiconductor device 100.

[0074] Figure 5B shows the temperature dependence of P-type and N-type polysilicon resistance, with the vertical axis representing the relative resistance (ratio of the resistance at the reference temperature to 1) to the resistance at the reference temperature (room temperature) and the horizontal axis representing temperature [K].

[0075] As shown in FIG. 5B, for P-type polysilicon resistors (circle and square legends), the relative value to the resistance value at the reference temperature is proportional to the temperature. That is, the resistance of P-type polysilicon resistors is proportional to the temperature and has positive temperature dependency. Furthermore, when comparing P-type polysilicon resistors with different resistances, P-type polysilicon resistors with smaller resistances (circle legend) have higher temperature dependency than P-type polysilicon resistors with larger resistances (square legend). Therefore, P-type polysilicon resistors have a higher temperature dependency than the forward voltage V of the temperature sensing diode section 173. F Here, this example shows the temperature dependence of resistance due to differences in impurity concentration in polysilicon of the same shape.

[0076] On the other hand, the N-type polysilicon resistor (with a triangle in the legend) is inversely proportional to the temperature. That is, the resistance of the N-type polysilicon resistor is inversely proportional to the temperature, and has a negative temperature dependency. Therefore, the N-type polysilicon resistor is inversely proportional to the forward voltage V F It has the same temperature dependence as

[0077] 5C shows the temperature dependence of the forward voltage of the temperature sensing diode section 173 connected to the P-type resistor section. FIG. 5D shows the temperature dependence of the forward voltage of the temperature sensing diode section 173 connected to the N-type resistor section. In FIGS. 5C and 5D, the horizontal axis represents the forward voltage VF [V], the vertical axis is the forward current I F 3A shows a graph of [A]. Here, connecting the temperature sensing diode portion 173 to an N-type resistor portion means that, for example, as shown in FIG. 3A, the cathode portion 177 of the temperature sensing diode portion 173 is connected to an N-type polysilicon resistor portion having similar dimensions. Also, connecting the temperature sensing diode portion 173 to a P-type resistor portion means that, for example, the anode portion 175 of the temperature sensing diode portion 173 is connected to a P-type polysilicon resistor portion having similar dimensions, as opposed to FIG. 3A.

[0078] As described above, the P-type polysilicon resistor is connected to the temperature sensing diode 173 through the forward voltage V F 5C, the temperature sensing diode section 173 connected to the P-type resistor section has a temperature dependency opposite to that of V F -I F The slope of V becomes smaller in the temperature range lower than the reference temperature. F -I F Therefore, the forward voltage V at the forward current I F The amount of change ΔV F ΔV of the temperature sensing diode section 173 shown in FIG. F will be smaller than

[0079] On the other hand, the N-type polysilicon resistor is connected to the temperature sensing diode 173. F Therefore, as shown in FIG. 5D, the temperature sensing diode section 173 connected to the N-type resistor section has the same temperature dependency as V F -I F The slope of V becomes larger in the temperature range lower than the reference temperature. F -I F Therefore, the forward voltage V at the forward current I F The amount of change ΔV F ΔV of the temperature sensing diode section 173 shown in FIG. F becomes larger than

[0080] In this way, the temperature sensing section 178 of this example is configured to detect the forward voltage V F Since the resistance value of the N-type region is greater than the resistance value of the P-type region, the forward voltage V F The amount of change ΔV F This increases the temperature detection accuracy.

[0081] Fig. 6A shows another example of a top view of the temperature sensing unit 178 according to the embodiment. Fig. 6B shows another example of an equivalent circuit of the semiconductor device 100. Fig. 6B shows an example of an equivalent circuit corresponding to the semiconductor device 100 including the temperature sensing unit 178 of Fig. 6A. In the description of Fig. 6A, description of elements common to Fig. 3A will be omitted.

[0082] In FIG. 6A, the contact holes 54 and 56 provided on the temperature sensing diode section 173 are connected to the cathode wiring 182. stretching The contact holes 55 and 56 provided on the resistor portion 179 are aligned in the +X-axis direction. stretching They are arranged side by side in the +X direction.

[0083] The cathode wiring 182 is connected to the cathode portion 177 of the temperature sensing diode portion 173, which is closest to the cathode pad 176, via a contact hole 54. The anode wiring 180 is connected to the resistor portion 179 via a contact hole 55.

[0084] The resistor portion 179 is connected to the anode portion 175 of the temperature sensing diode portion 173 that is farthest from the anode pad 174 via the contact hole 56 and the connection portion 183. The resistor portion 179 is provided between the anode wiring 180 and the temperature sensing diode portion 173.

[0085] The connecting portion 183 is L-shaped and is connected to the anode wiring 180. stretchingThe wiring 180 has a portion extending in the positive X-axis direction and a portion extending from the anode wiring 180 side to the cathode wiring 182 side (in the negative Y-axis direction).

[0086] FIG. 6B shows an example of an equivalent circuit corresponding to the semiconductor device 100 including the temperature sensing section 178 of FIG. 6A. FIG. 6B shows an example of the element structure of the active section 120 and the circuit configuration of the temperature sensing section 178 shown in FIG. 6A. The two are insulated by an interlayer insulating film 38. The element structure of the active section 120 of this example is a MOSFET ( Metal Oxide Semiconductor field-effect transistor).

[0087] In this example, multiple temperature sensing diode sections 173 and resistor section 179 are connected in series between an anode pad 174 and a cathode pad 176. The temperature sensing diode section 173 may be a Zener diode composed of an anode section 175 and a cathode section 177.

[0088] The cathode wiring 182 connects the cathode pad 176 and the cathode portion 177 of the temperature sensing diode portion 173, and the anode wiring 180 connects the anode pad 174 and the resistance portion 179. This example differs from FIG. 3D in that the resistance portion 179 is provided between the anode wiring 180 and the temperature sensing diode portion 173, but the same effects as those in FIGS. 3A to 3D can be obtained.

[0089] 6C shows another example of a top view of the temperature sensing section 178 according to the embodiment. The example of FIG. 6C differs from FIG. 6A in that the connecting section 183 is rectangular. In FIG. 6C, the contact holes 54 and 56 provided on the temperature sensing diode section 173 are located at the same position as the cathode wiring 182 except for a part of them. stretching They are aligned in the +X direction.

[0090] The contact hole 56 provided on the anode portion 175 of the temperature sensing diode portion 173 located at the farthest position from the anode wiring 180 is stretchingThe contact holes 55 and 56 provided on the resistor portion 179 are formed in the direction (+X-axis direction) of the anode wiring 180. stretching They are arranged side by side in the +X-axis direction.

[0091] The cathode wiring 182 is connected to the cathode portion 177 of the temperature sensing diode portion 173 that is closest (in the +X-axis direction) via a contact hole 54. The anode wiring 180 is connected to the resistor portion 179 via a contact hole 55. The resistor portion 179 is connected to the anode portion 175 of the temperature sensing diode portion 173 that is farthest from the anode pad 174 via a contact hole 56 and a connection portion 183. The resistor portion 179 is provided between the anode wiring 180 and the temperature sensing diode portion 173. In this example, the same effects as those in FIGS. 3A to 3D can be obtained.

[0092] Fig. 7A shows another example of a top view of the temperature sensing unit 178 according to the embodiment. In the description of Fig. 7A and Fig. 7B, the description of elements common to Fig. 3A will be omitted.

[0093] 7A, the resistance portion 179 is provided so as to be connected to the cathode portion 177. That is, the resistance portion 179 is provided integrally with the cathode portion 177 of the temperature sensing diode portion 173 that is closest to the cathode pad 176 (in the -X-axis direction). This shortens the distance of the temperature sensing portion 178 in the X-axis direction, thereby increasing the area of ​​the active portion 120 and reducing the number of connecting portions 181 and contact holes 56.

[0094] In FIG. 7A, contact holes 54, 55, and 56 are aligned in the extension direction of cathode wiring 182, as in FIG. 3A, but they may also be aligned in the extension direction of anode wiring 180, as in FIG. 6A.

[0095] Figure 7B shows an example of a cross-sectional view taken along line BB' of Figure 7A. Similar to the temperature sensing unit 178 of Figure 3A, the temperature sensing unit 178 of this example is provided on the first insulating film 36 provided on the front surface 21 of the semiconductor substrate 10 (see Figure 3C).

[0096] 7C shows another example of the cross-sectional view taken along line B-B' in FIG. 7A. The semiconductor device 100 of this example further includes a conductive layer 185 provided on the first insulating film 36 and a second insulating film 37 covering the conductive layer 185. The temperature sensing unit 178 is provided on the second insulating film 37.

[0097] The second insulating film 37 may be an oxide film formed by thermal oxidation or CVD. The conductive layer 185 is N-type polysilicon. The conductive layer 185 may be formed of the same doped polysilicon as the dummy conductive portion 34 and the gate conductive portion 44. The doping concentration of the conductive layer 185 is 1E20 cm -3 That's all.

[0098] In this way, the conductive layer 185 is disposed between the first insulating film 36 and the second insulating film 37, and the distance in the Z-axis direction from the front surface 21 of the semiconductor substrate 10 to the lower end of the temperature sensing diode portion 173 is increased. This forms a capacitance component below the temperature sensing diode portion 173, making it possible to prevent the temperature sensing diode portion 173 from being destroyed by static electricity or an overvoltage applied to the electrode.

[0099] Fig. 7D shows yet another example of the cross-sectional view taken along line B-B' in Fig. 7A. The semiconductor device 100 of this example is similar to that of Fig. 7C in that it includes a conductive layer 185 and a second insulating film 37, but the conductive layer 185 has a plurality of mutually separated regions that are arranged corresponding to the respective temperature sensing diode portions 173 and resistor portions 179.

[0100] In this way, by dividing the conductive layer 185, even if any of the multiple temperature sensing diode sections 173 is destroyed, the impact is limited to that temperature sensing diode section 173, and the other temperature sensing diode sections 173 can be prevented from shorting out.

[0101] 7E shows yet another example of the cross-sectional view taken along line B-B' of FIG. 7A. The semiconductor device 100 of this example is similar to that of FIG. 7D in that it includes a conductive layer 185 and a second insulating film 37, and the conductive layer 185 is divided into multiple regions. However, in this example, the resistor portion 179 is provided on the first insulating film 36, not on the second insulating film 37. That is, in this example, any of the divided regions of the conductive layer 185 may be used as the resistor portion 179. In this way, the thickness in the Z-axis direction can be reduced in the region where the conductive layer 185 also serves as the resistor portion 179.

[0102] By reducing the thickness in the Z-axis direction, the resistance increases in the region where conductive layer 185 also serves as resistor section 179, thereby enabling the area of ​​resistor section 179 to be reduced. Furthermore, by reducing the length in the Y-axis direction in the region where conductive layer 185 also serves as resistor section 179, the resistance also increases, enabling the area of ​​resistor section 179 to be reduced.

[0103] Fig. 8A shows another example of a top view of the temperature sensing unit 178 according to the embodiment. Fig. 8B shows another example of an equivalent circuit of the semiconductor device 100. Fig. 8B shows an example of an equivalent circuit corresponding to the semiconductor device 100 including the temperature sensing unit 178 of Fig. 8A. In the description of Figs. 8A and 8B, description of elements common to Fig. 3A will be omitted.

[0104] The resistance section 179 of this example has an anode-side resistance section 179A provided between the anode wiring 180 and the temperature sensing diode section 173, and a cathode-side resistance section 179K provided between the cathode wiring 182 and the temperature sensing diode section 173.

[0105] The anode wiring 180 is connected to the anode-side resistance portion 179A via the contact hole 54, and the anode-side resistance portion 179A is connected to the anode portion 175 of the temperature sensing diode portion 173 that is farthest from the anode pad 174 (in the +X-axis direction) via the contact hole 56 and the connection portion 181. The cathode wiring 182 is connected to the cathode-side resistance portion 179K via the contact hole 55, and the cathode-side resistance portion 179K is connected to the cathode portion 177 of the nearest temperature sensing diode portion 173 via the contact hole 56 and the connection portion 181.

[0106] The anode-side resistor 179A and the cathode-side resistor 179K may have the same doping concentration or different doping concentrations. The anode-side resistor 179A and the cathode-side resistor 179K may have the same dimensions or different dimensions. Although the anode-side resistor 179A is located on the +X-axis side of the cathode-side resistor 179K in FIG. 8A , their positions may be reversed.

[0107] Fig. 9A shows another example of a top view of the temperature sensing unit 178 according to the embodiment. Fig. 9B shows another example of an equivalent circuit of the semiconductor device 100. Fig. 9B shows an example of an equivalent circuit corresponding to the semiconductor device 100 including the temperature sensing unit 178 of Fig. 9A. In the description of Figs. 9A and 9B, description of elements common to Fig. 3A will be omitted.

[0108] The resistance portions 179 in this example are provided between the temperature sensing diode portions 173. That is, each resistance portion 179 is provided integrally with the cathode portion 177 of the corresponding temperature sensing diode portion 173. This shortens the distance in the X-axis direction of the temperature sensing portions 178, allowing the area of ​​the active portion 120 to be increased, and the number of connecting portions 181 and contact holes 56 to be reduced.

[0109] In the example of FIGS. 8A to 9B, a conductive layer 185 and a second insulating film 37 as shown in FIG. 7C or 7D may be provided below the temperature sensing section 178.

[0110] In this way, the temperature sensing section 178 of this example is configured to detect the forward voltage V F Since the resistance value of the N-type region is greater than the resistance value of the P-type region, the forward voltage V F The amount of change ΔV F This increases the temperature detection accuracy.

[0111] Although the temperature sensing unit 178 according to the above-described embodiment has an N-type resistance unit 179, the resistance unit may instead be made of a metal such as aluminum or an alloy containing aluminum. In this case, the dimensions (particularly the length) of the resistance unit may be determined so that the total resistance of the cathode unit 177 and the resistance unit is greater than the resistance of the anode unit 175. Alternatively, instead of providing a resistance unit in the temperature sensing unit 178, the extension lengths of the anode wiring 180 and the cathode wiring 182 may be increased.

[0112] 10A shows an example of a top view of a semiconductor device 200 according to an embodiment. This example differs from FIG. 1 in that an active section 120 is provided with a transistor section 70 including a transistor element such as an IGBT (insulated gate bipolar transistor) and a diode section 80 including a diode element such as an FWD (free wheel diode).

[0113] When an IGBT and an FWD are provided in the active section 120, the transistor section 70 and the diode section 80 form an RC-IGBT (Reverse Conducting IGBT). The active section 120 may be a region in which at least one transistor section 70 and one diode section 80 are provided.

[0114] In this example, in the active section 120, the region where the transistor section 70 is arranged is marked with the symbol "I," and the region where the diode section 80 is arranged is marked with the symbol "F." The transistor sections 70 and the diode sections 80 may be arranged alternately in the X-axis direction in each region of the active section 120.

[0115] 10B shows an example of an XZ cross-sectional view of the semiconductor device 200. FIG. 10B shows an example of an XZ cross-sectional view of the element structure in the transistor section 70 and the diode section 80 of the active section 120.

[0116] The transistor section 70 has a plurality of dummy trenches 30 and a plurality of gate trenches 40 on the front surface 21 of the semiconductor substrate 10, and the diode section 80 has a plurality of dummy trenches 30. The semiconductor substrate 10 also has mesa sections 60, which are dopant diffusion regions, between the plurality of trenches. The mesa sections 60 are connected to the emitter electrode 53 via contact holes 54.

[0117] The dummy trench portion 30 has a dummy insulating film 32 and a dummy conductive portion 34. The dummy conductive portion 34 is electrically connected to the emitter electrode 53 via a contact hole and is set to the emitter potential.

[0118] The gate trench portion 40 has a gate conductive portion 44 made of a conductor such as metal and a gate insulating film 42. The gate conductive portion 44 is insulated from the emitter electrode 53 by an interlayer insulating film 38. The gate conductive portion 44 is electrically connected to a gate pad 50 by a gate runner and is set to a gate potential. The gate conductive portion 44 corresponds to the gate electrode of the transistor portion 70. As an example, the gate potential may be higher than the emitter potential.

[0119] The transistor section 70 has, from the front surface 21 side of the semiconductor substrate 10, an emitter region 13 of a first conductivity type, a base region 15 of a second conductivity type, a drift region 18 of the first conductivity type, and a collector region 25 of the second conductivity type. The emitter region 13 may be provided over the entire mesa section 60 on the front surface 21 of the semiconductor substrate 10, or may be provided only in regions adjacent to the dummy trench section 30 and the gate trench section 40. In regions of the mesa section 60 where the emitter region 13 is not provided, the base region 15 may be exposed at the front surface 21.

[0120] The transistor section 70 of this example also has an accumulation region 16 of the first conductivity type provided between the base region 15 and the drift region 18. Providing the accumulation region 16 improves the IE effect (Injection Enhancement effect) of carriers into the base region 15, thereby reducing the on-voltage. However, the accumulation region 16 may be omitted.

[0121] As an example, the emitter region 13 has N+ type polarity. The base region 15 differs from the base region 14 in FIG. 2 in that it has P- type polarity. When the gate conductive portion 44 is set to a gate potential, electrons are attracted to the gate trench portion 40 in the base region 15. An N-type channel is formed in the region of the base region 15 that contacts the gate trench portion 40, and the base region 15 operates as a transistor.

[0122] In the diode section 80, a P-type base region 15 is provided on the front surface 21 side of the semiconductor substrate 10. In this example, the diode section 80 does not have an accumulation region 16. In other examples, the diode section 80 may also have an accumulation region 16.

[0123] An N-type drift region 18 is provided below the accumulation region 16 in the transistor section 70 and below the base region 15 in the diode section 80. An N-type buffer region 20 is provided below the drift region 18 in both the transistor section 70 and the diode section 80. The buffer region 20 may function as a field stop layer that prevents a depletion layer extending from the lower surface of the base region 15 from reaching the P-type collector region 25 and the N+ type cathode region 82.

[0124] In the transistor section 70, a P-type collector region 25 is provided below the buffer region 20. In the diode section 80, an N+-type cathode region 82 is provided below the buffer region 20.

[0125] The surfaces below the collector region 25 and the cathode region 82 correspond to the rear surface 23 of the semiconductor substrate 10. A collector electrode 26 is provided on the rear surface 23 of the semiconductor substrate 10. The collector electrode 26 is made of a conductive material such as a metal or a laminate of conductive materials such as metals.

[0126] In this example, the transistor sections 70 and the diode sections 80 are alternately arranged along the X-axis direction, but the transistor sections 70 and the diode sections 80 may also be alternately arranged along the Y-axis direction.

[0127] 3A, 3B, 3C, 6A, 6C, 7A, 7B, 7C, 7D, 7E, 8A, and 9A may also be provided in the semiconductor device 200 having an RC-IGBT in the active section 120. In this case, in the temperature sensing section 178, a buffer region 20 is provided on the lower surface of the drift region 18, and a collector region 25 is provided on the lower surface of the buffer region 20.

[0128] The temperature sensing section 178 can achieve the same effect as when the active section 120 is provided with a MOSFET. Furthermore, the same applies to the case where the active section 120 includes an IGBT (insulated gate bipolar transistor).

[0129] 11A and 11B show an example of a method for manufacturing the semiconductor device 100. Here, a process for forming the temperature sensing portion 178 of FIG. 3A will be described. In step S100, a first insulating film 36 is formed on the front surface 21 of the semiconductor substrate 10 by thermal oxidation. The region where the temperature sensing portion 178 is formed may be a region where the well region 130 is provided on the front surface 21 of the semiconductor substrate 10.

[0130] The first insulating film 36 may be formed of the same oxide film as the gate insulating film 42. In other words, the first insulating film 36 may be formed in the same process as the gate insulating film 42.

[0131] In step S102, a polysilicon layer 170 for forming the temperature sensing portion 178 is formed by a CVD method on the first insulating film 36. The polysilicon layer 170 may be undoped polysilicon or lightly doped N-type polysilicon.

[0132] In step S104, a P-type impurity such as boron (B) is ion-implanted from above the front surface 21 of the semiconductor substrate 10. The P-type impurity is Polysilicon layer 170 The doping concentration of the P-type impurity is 1E18 cm -3 More than 1E20cm -3 It may be less than.

[0133] Next, in step S106, a resist mask 190 is placed on the polysilicon layer 170, and N-type impurities are selectively ion-implanted from above the front surface 21 of the semiconductor substrate 10 using the resist mask 190. The N-type impurities are arsenic (As) or phosphorus (P), etc. The doping concentration of the N-type impurities is 1E18 cm -3 More than 1E20cm -3 It may be less than.

[0134] The region where the resist mask 190 is placed corresponds to a P-type region that will eventually become the anode portion 175. The region where the N-type impurity is ion-implanted corresponds to an N-type region that will eventually become the cathode portion 177 or the resistor portion 179.

[0135] The N-type impurity is ion-implanted to a dimension (width) such that the resistance of the N-type region is greater than the resistance of the P-type region. The implantation depth of the P-type impurity implanted in the previous step S104 is indicated by a dashed line.

[0136] The doping concentration of the resistor portion 179 may be the same as the doping concentration of the cathode portion 177. In this case, the resistor portion 179 and the cathode portion 177 may be formed in the same process. That is, the regions that will become the resistor portion 179 and the cathode portion 177 may be ion-implanted at the same doping concentration in step S106.

[0137] On the other hand, the doping concentration of the resistor portion 179 may be different from the doping concentration of the cathode portion 177. In this case, polysilicon having a doping concentration lower than the doping concentration to be ion-implanted in step S106 is used as the polysilicon layer 170. In step S106, ions are implanted only into the region that will become the cathode portion 177, and ions are not implanted into the region that will become the resistor portion 179.

[0138] In step S108, the resist mask 190 is removed. In step S110, a heat treatment is performed to diffuse the implanted N-type and P-type impurities from the upper surface to the lower surface of the polysilicon layer 170. In addition, a resist mask 191 is placed on the polysilicon layer 170, and the polysilicon layer 170 is patterned by etching using the resist mask 191.

[0139] In step S112, the resist mask 191 is removed, and a plurality of temperature sensing diode portions 173 each having an anode portion 175 and a cathode portion 177, and an N-type resistor portion 179 are formed.

[0140] In step S114, an interlayer insulating film 38 is formed so as to cover the resistance portion 179, the anode portion 175, and the cathode portion 177, and then contact holes 54, 55, and 56 are formed by patterning the interlayer insulating film 38. Next, a metal layer made of aluminum or an alloy containing aluminum, or the like, arranged on the interlayer insulating film 38 is patterned to form an anode wiring 180, a cathode wiring 182, and a connection portion 181.

[0141] 12 shows another example of a method for manufacturing semiconductor device 100. Here, as with FIGS. 11A and 11B, a process for forming temperature sensing unit 178 in FIG. 3A will be described. Note that steps S100 and S102 are common to FIG. 11A, so their description will be omitted, and only the following step S105 will be described.

[0142] In step S105, a resist mask 190 is placed on the polysilicon layer 170, and N-type impurities such as arsenic (As) or phosphorus (P) are selectively ion-implanted from above the front surface 21 of the semiconductor substrate 10. The region where the resist mask 190 is placed corresponds to the P-type region that will eventually become the anode portion 175. The region where the N-type impurity is ion-implanted corresponds to the N-type region that will eventually become the cathode portion 177 or the resistor portion 179.

[0143] Next, in step S107, resist mask 190 is removed, resist mask 192 is placed on polysilicon layer 170, and P-type impurities such as boron (B) are ion-implanted from above front surface 21 of semiconductor substrate 10. Resist mask 192 is placed in the region where N-type impurities were ion-implanted in step S105, i.e., the region where resist mask 190 was not placed.

[0144] In steps S105 and S107, N-type and P-type impurities are ion-implanted to dimensions (widths) such that the resistance of the N-type region is greater than the resistance of the P-type region. Steps S108 and onward are the same as those in FIG. 11B, and therefore will not be described further.

[0145] Although the present invention has been described above using embodiments, the technical scope of the present invention is not limited to the scope described in the above embodiments. It will be apparent to those skilled in the art that various modifications and improvements can be made to the above embodiments. It is clear from the claims that such modifications and improvements can also be included within the technical scope of the present invention.

[0146] It should be noted that the execution order of each process, such as operations, procedures, steps, and stages, in the devices, systems, programs, and methods shown in the claims, specifications, and drawings is not specifically stated as "before," "prior to," etc., and that the processes can be performed in any order unless the output of a previous process is used in a subsequent process. Even if the operational flow in the claims, specifications, and drawings is described using "first," "next," etc. for convenience, this does not mean that the processes must be performed in this order. [Explanation of symbols]

[0147] 10 semiconductor substrate, 12 source region, 13 emitter region, 14 base region, 15 base region, 16 accumulation region, 18 drift region, 20 buffer region, 21 front surface, 22 drain region, 23 back surface, 24 drain electrode, 25 collector region, 26 collector electrode, 30 dummy trench portion, 32 dummy insulating film, 34 dummy conductive portion, 36 first insulating film, 37 second insulating film, 38 interlayer insulating film, 40 gate trench portion, 42 gate insulating film, 44 gate conductive portion, 50 gate pad, 52 source electrode, 53 emitter electrode, 54 contact hole, 55 contact hole, 56 contact 1. A semiconductor device according to claim 1, wherein the first and second electrodes are formed on the first and second electrodes, and the second and third electrodes are formed on the second and third electrodes. 2. A semiconductor device according to claim 1, wherein the first and second electrodes are formed on the first and second electrodes. 3. A semiconductor device according to claim 1, wherein the first and second electrodes are formed on the first and second electrodes. 4. A semiconductor device according to claim 1, wherein the first and second electrodes are formed on the first and second electrodes. 5. A semiconductor device according to claim 1, wherein the first and second electrodes are formed on the first and second electrodes. 6. A semiconductor device according to claim 1, wherein the first and second electrodes are formed on the first and second electrodes. 7. A semiconductor device according to claim 1, wherein the first and second electrodes are formed on the first and second electrodes. 8. A semiconductor device according to claim 1, wherein the first and second electrodes are formed on the first and second electrodes. 9. A semiconductor device according to claim 1, wherein the first and second electrodes are formed on the first and second electrodes. 10. A semiconductor device according to claim 1, wherein the first and second electrodes are formed on the first and second electrodes. 11. A semiconductor device according to claim 1, wherein the first and second electrodes are formed on the first and second electrodes. 12. A semiconductor device according to claim 1, wherein the first and second electrodes are formed on the first and second electrodes. 13. A semiconductor device according to claim 1, wherein the first and second electrodes are formed on the first and second electrodes. 14. A semiconductor device according to claim 1, wherein the first and second electrodes are formed on the first and second electrodes. 15. A semiconductor device according to claim 1, wherein the first and second electrodes are formed on the first and second electrodes. 16. A semiconductor device according to claim 1, wherein the first and second electrodes are formed on the first and second electrodes. 17 ... 75 anode portion, 176 cathode pad, 177 cathode portion, 178 temperature sensing portion, 179 resistor portion, 180 anode wiring, 181 connection portion, 182 cathode wiring, 183 connection portion, 185 conductive layer, 190 resist mask, 191 resist mask, 192 resist mask, 200 semiconductor device

Claims

1. a temperature sensor provided above the front surface of the semiconductor substrate; the temperature sensing unit has a temperature sensing diode unit and an N-type resistor unit electrically connected to the temperature sensing diode unit, The temperature sensing diode unit an anode portion and a cathode portion connected to the anode portion; A plurality of the temperature sensing diode units are connected in series, the sum of the resistance values ​​of the cathode section and the resistor section is greater than the resistance value of the anode section; The resistor portion is provided between the temperature sensing diode portions. Semiconductor device.

2. A temperature sensor provided above the front surface of a semiconductor substrate, the temperature sensing unit has a temperature sensing diode unit and an N-type resistor unit electrically connected to the temperature sensing diode unit, The temperature sensing diode unit an anode portion and a cathode portion connected to the anode portion; A plurality of the temperature sensing diode units are connected in series, the sum of the resistance values ​​of the cathode section and the resistor section is greater than the resistance value of the anode section; The resistance value of the resistor section is smaller than the total resistance value of the plurality of temperature sensing diode sections. Semiconductor device.

3. The resistor portion is made of N-type polysilicon.

3. The semiconductor device according to claim 1.

4. The plurality of temperature sensing diode units connected in series are an anode wiring electrically connected to the anode portion; a cathode wiring electrically connected to the cathode portion; and The resistor section is provided between the anode wiring and the plurality of temperature sensing diode sections connected in series. The semiconductor device according to claim 1 .

5. The plurality of temperature sensing diode units connected in series are an anode wiring electrically connected to the anode portion; a cathode wiring electrically connected to the cathode portion; and The resistor section is provided between the cathode wiring and the plurality of temperature sensing diode sections connected in series. The semiconductor device according to claim 1 .

6. The plurality of temperature sensing diode units connected in series are an anode wiring electrically connected to the anode portion; a cathode wiring electrically connected to the cathode portion; and The resistor portion is an anode-side resistor portion provided between the anode wiring and the plurality of temperature sensing diode portions connected in series; a cathode-side resistor portion provided between the cathode wiring and the plurality of temperature sensing diode portions connected in series; have The semiconductor device according to claim 1 .

7. The resistor portion is provided between the temperature sensing diode portions. The semiconductor device according to claim 2 .

8. The resistor portion is provided in connection with the cathode portion. The semiconductor device according to claim 1 .

9. The anode portion and the cathode portion are arranged on a plane parallel to the front surface of the semiconductor substrate. The semiconductor device according to claim 1 .

10. The doping concentration of the resistor portion is 1E18 cm －３ Above, 1E20cm －３ is less than The semiconductor device according to claim 1 .

11. The doping concentration of the temperature sensing diode portion is 1E18 cm －３ Above, 1E20cm －３ is less than The semiconductor device according to claim 1 .

12. The doping concentration of the resistor portion is equal to or lower than the doping concentration of the cathode portion. The semiconductor device according to claim 1 .

13. The doping concentration of the resistor portion is the same as the doping concentration of the cathode portion. The semiconductor device according to claim 12.

14. a first insulating film provided on the front surface of the semiconductor substrate, a conductive layer provided on the first insulating film, and a second insulating film covering the conductive layer; The temperature sensing section is provided on the second insulating film. The semiconductor device according to claim 1 .

15. The conductive layer is N-type polysilicon. The semiconductor device according to claim 14.

16. The doping concentration of the conductive layer is 1E20 cm －３ That's all The semiconductor device according to claim 15.

17. The conductive layer has a plurality of regions that are arranged corresponding to the temperature sensing diode portions and the resistor portions and are separated from each other. The semiconductor device according to any one of claims 14 to 16.

18. forming a temperature sensing unit above a front surface of a semiconductor substrate, the temperature sensing unit having a plurality of temperature sensing diode units connected in series, each having an anode unit and a cathode unit connected to the anode unit, and an N-type resistor unit electrically connected to the plurality of temperature sensing diode units; the sum of the resistance values ​​of the cathode section and the resistor section is greater than the resistance value of the anode section; The resistance value of the resistor section is smaller than the total resistance value of the plurality of temperature sensing diode sections. A method for manufacturing a semiconductor device.

19. The doping concentration of the resistor portion is the same as the doping concentration of the cathode portion, and the resistor portion and the cathode portion are formed in the same process. The method for manufacturing a semiconductor device according to claim 18.

20. A method comprising the step of forming a temperature sensing section above a front surface of a semiconductor substrate, the temperature sensing section having an anode section, a cathode section connected to the anode section, a plurality of temperature sensing diode sections connected in series, and an N-type resistor section electrically connected to the plurality of temperature sensing diode sections; the sum of the resistance values ​​of the cathode section and the resistor section is greater than the resistance value of the anode section; The doping concentration of the resistor portion is different from the doping concentration of the cathode portion, and the resistor portion is formed from N-type polysilicon having a lower doping concentration than the cathode portion without ion implantation. A method for manufacturing a semiconductor device.

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