Light-emitting device and image display device

Abstract

A light-emitting device according to one embodiment of the present disclosure comprises: a substrate having a first surface and a second surface that oppose each other; a plurality of light-emitting elements disposed in an array pattern on the first surface side of the substrate; a partition wall formed above the plurality of light-emitting elements by using a metal material, the partition wall having an opening for each of the plurality of light-emitting elements; and a wavelength conversion layer which is provided inside the openings and which converts the wavelength of light emitted from the plurality of light-emitting elements.

Description

[Technical Field]

[0001] The present disclosure relates to a light-emitting device and an image display device including the same. [Background technology]

[0002] For example, Patent Document 1 discloses a display device having a reflective film on the side surface of a partition wall provided between a blue conversion layer, a green conversion layer, and a red conversion layer provided on a light-emitting layer. Also, for example, Patent Document 2 discloses a display device in which an organic layer and a second electrode layer extend on the side surface and top surface of a partition wall provided between a plurality of light-emitting elements having an organic layer including a light-emitting layer. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent Publication No. 2020-086461 [Patent Document 2] Japanese Patent Application Laid-Open No. 2016-45979 Summary of the Invention

[0004] Incidentally, in image display devices that use light-emitting diodes (LEDs) as light sources for display pixels, improvements in display quality are being sought.

[0005] It is desirable to provide a light emitting device and an image display device that can improve display quality.

[0006] A light emitting device according to an embodiment of the present disclosure includes a substrate having a first surface and a second surface opposite to each other, a plurality of light emitting elements arranged in an array on the first surface side of the substrate, a partition wall formed of a metal material above the plurality of light emitting elements and having an opening for each of the plurality of light emitting elements, and a wavelength conversion layer provided in the opening and configured to convert the wavelength of light emitted from the plurality of light emitting elements. The partition wall has a laminated structure of a first partition wall portion formed using a semiconductor material and a second partition wall portion formed using the metal material, and the first partition wall portion and the second partition wall portion are laminated in this order from the substrate side. .

[0007] An image display device according to an embodiment of the present disclosure includes a light-emitting device, and includes the light-emitting device according to the embodiment of the present disclosure as the light-emitting device.

[0008] In the light-emitting device and the image display device according to an embodiment of the present disclosure, a partition wall is disposed above a plurality of light-emitting elements arranged in an array, and the partition wall separates the wavelength conversion layer, which converts the wavelength of light emitted from the plurality of light-emitting elements, into each of the light-emitting elements. The partition wall is formed of a metal material, thereby suppressing a temperature rise in the wavelength conversion layer. [Brief explanation of the drawings]

[0009] [Figure 1] 1 is a cross-sectional view illustrating an example of a configuration of a light-emitting device according to an embodiment of the present disclosure. [Figure 2] FIG. 2 is a schematic diagram illustrating an example of the overall planar configuration of the light emitting device shown in FIG. [Figure 3] 3 is a schematic enlarged view of a part of the planar configuration of the light emitting device shown in FIG. 2. FIG. [Figure 4A] 2A to 2C are cross-sectional views illustrating an example of a manufacturing process for the light-emitting device shown in FIG. [Figure 4B] FIG. 4B is a schematic cross-sectional view showing a step subsequent to FIG. 4A. [Figure 4C] FIG. 4C is a schematic cross-sectional view showing a step subsequent to FIG. 4B. [Figure 4D] FIG. 4D is a schematic cross-sectional view showing a step subsequent to FIG. 4C. [Figure 4E] FIG. 4B is a schematic cross-sectional view showing a step subsequent to FIG. 4D. [Figure 4F] FIG. 4B is a schematic cross-sectional view showing a step subsequent to FIG. 4E. [Figure 5A] 1. FIG. 4 is a cross-sectional view illustrating another example of the manufacturing process for the light-emitting device shown in FIG. [Figure 5B] FIG. 5B is a schematic cross-sectional view showing a step subsequent to FIG. 5A. [Figure 5C] FIG. 5C is a schematic cross-sectional view showing a step subsequent to FIG. 5B. [Figure 6A] 1. FIG. 4 is a cross-sectional view illustrating another example of the manufacturing process for the light-emitting device shown in FIG. [Figure 6B]FIG. 6B is a schematic cross-sectional view showing a step subsequent to FIG. 6A. [Figure 6C] FIG. 6C is a schematic cross-sectional view showing a step subsequent to FIG. 6B. [Figure 7] 10 is a cross-sectional view schematically illustrating an example of the configuration of a light-emitting device according to Modification 1 of the present disclosure. FIG. [Figure 8] 10 is a cross-sectional view schematically illustrating an example of the configuration of a light-emitting device according to Modification 2 of the present disclosure. FIG. [Figure 9] FIG. 10 is a cross-sectional view illustrating an example of the configuration of a light-emitting device according to Modification 3 of the present disclosure. [Figure 10] FIG. 10 is a cross-sectional view illustrating an example of the configuration of a light-emitting device according to Modification 4 of the present disclosure. [Figure 11] FIG. 11 is a cross-sectional view illustrating an example of the configuration of a light-emitting device according to Modification 5 of the present disclosure. [Figure 12] 12 is a schematic diagram illustrating an example of the planar configuration of the light emitting device shown in FIG. [Figure 13] 13 is a cross-sectional view schematically illustrating an example of the configuration of a light-emitting device according to Modification 6 of the present disclosure. FIG. [Figure 14] FIG. 13 is a cross-sectional view illustrating an example of the configuration of a light-emitting device according to Modification 7 of the present disclosure. [Figure 15A] 15A to 15C are cross-sectional views illustrating an example of a manufacturing process for the light-emitting device shown in FIG. 14. [Figure 15B] FIG. 15B is a schematic cross-sectional view showing a step subsequent to FIG. 15A. [Figure 15C] FIG. 15C is a schematic cross-sectional view showing a step subsequent to FIG. 15B. [Figure 15D] FIG. 15D is a schematic cross-sectional view showing a step subsequent to FIG. 15C. [Figure 15E] FIG. 15B is a schematic cross-sectional view showing a step subsequent to FIG. 15D. [Figure 15F] FIG. 15B is a schematic cross-sectional view showing a step subsequent to FIG. 15E. [Figure 15G] FIG. 15B is a schematic cross-sectional view showing the step following FIG. 15F. [Figure 15H] FIG. 15B is a schematic cross-sectional view showing the step following FIG. 15G. [Figure 15I] FIG. 15B is a schematic cross-sectional view showing the step subsequent to FIG. 15H. [Figure 16]FIG. 13 is a plan view schematically illustrating an example of the layout of a wavelength conversion layer in a light emitting device according to Modification 8 of the present disclosure. [Figure 17] FIG. 13 is a plan view schematically illustrating another example of the layout of the wavelength conversion layer in the light emitting device according to the eighth modification of the present disclosure. [Figure 18] FIG. 1 is a perspective view illustrating an example of a configuration of an image display device according to an application example of the present disclosure. [Figure 19] FIG. 19 is a schematic diagram illustrating an example of a wiring layout of the image display device shown in FIG. [Figure 20] FIG. 1 is a perspective view illustrating an example of a configuration of an image display device according to an application example of the present disclosure. [Figure 21] FIG. 21 is a perspective view illustrating the configuration of the mounting board illustrated in FIG. 20. [Figure 22] FIG. 22 is a perspective view illustrating the configuration of the unit substrate illustrated in FIG. 21. [Figure 23] FIG. 1 is a diagram illustrating an example of an image display device according to an application example of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0010] An embodiment of the present disclosure will be described in detail below with reference to the drawings. The following description is a specific example of the present disclosure, and the present disclosure is not limited to the following aspects. Furthermore, the present disclosure is not limited to the arrangement, dimensions, dimensional ratios, etc. of each component shown in each drawing. The order of description is as follows. 1. Embodiment (Example in which a partition constituting a wavelength conversion unit arranged above a light emitting unit is formed using a metal material) 1-1.Configuration of the light-emitting device 1-2. Manufacturing method of light emitting device 1-3. Actions and Effects 2. Variations 2-1. Modification 1 (another example of a light-emitting device) 2-2. Modification 2 (another example of a light-emitting device) 2-3. Modification 3 (another example of a light-emitting device) 2-4. Modification 4 (another example of a light-emitting device) 2-5. Modification 5 (another example of a light-emitting device) 2-6. Modification 6 (another example of a light-emitting device) 2-7. Modification 7 (another example of a light-emitting device) 2-8. Modification 8 (another example of a light-emitting device) 3. Application Examples

[0011] <1. Embodiment> Fig. 1 is a schematic diagram illustrating an example of a cross-sectional configuration of a light-emitting device (light-emitting device 1) according to an embodiment of the present disclosure. Fig. 2 is a schematic diagram illustrating an example of an overall planar configuration of the light-emitting device 1 shown in Fig. 1. The light-emitting device 1 is suitably applicable to a display unit of an image display device (image display device 100, see Fig. 18) known as an LED display.

[0012] (1-1. Configuration of the Light-Emitting Device) The light emitting device 1 is, for example, a circuit board 30 having a front surface (surface 30S1) and a back surface (surface 30S2) opposite to each other, and on the surface 30S1 side of the circuit board 30, a light emitting section 10 having a plurality of light emitting elements 11 arranged in an array, a partition wall 21 having an opening 21H for each light emitting element 11, and a wavelength converting section 20 having a wavelength converting layer 22 provided in the opening 21H, stacked in this order. In this embodiment, the partition wall 21 and the wavelength converting layer 22 are integrally formed, and the partition wall 21 is made of a metal material. Furthermore, the light emitting device 1 is connected to the circuit board 30, for example, via through-wires 25, in a peripheral portion 100B surrounding an array portion 100A in which a plurality of light emitting elements 11 are arranged in a two-dimensional array.

[0013] The light-emitting section 10 has a plurality of light-emitting elements 11 arranged in a two-dimensional array as described above, an insulating layer 12 in which the plurality of light-emitting elements 11 are embedded, and an electrode layer 13 as a common electrode for the plurality of light-emitting elements 11. The light-emitting section 10 further has wiring 14 formed on, for example, the surface 30S1 of the circuit board 30, and through wiring 15 that electrically connects the electrode layer 13 and the wiring 14.

[0014] The light-emitting element 11 corresponds to a specific example of a "light-emitting element" in the present disclosure. The light-emitting element 11 is a solid-state light-emitting element that emits light in a predetermined wavelength band from a light extraction surface (surface 11S1), and is, for example, an LED (Light Emitting Diode) chip. The LED chip refers to an element cut from a wafer used for crystal growth, and is not a packaged type covered with molded resin or the like. The LED chip has a size of, for example, 5 μm to 100 μm, and is what is known as a micro LED.

[0015] The light-emitting element 11 has a first-conductivity-type layer 111, an active layer 112, and a second-conductivity-type layer 113 stacked in this order, with the upper surface of the second-conductivity-type layer 113 serving as a light extraction surface (surface 11S1). Although not shown, the light-emitting element 11 further has electrodes electrically connected to the first-conductivity-type layer 111 and the second-conductivity-type layer 113, respectively. Vias V1 and V2 are connected to these electrodes, respectively, with the via V1 electrically connecting the first-conductivity-type layer 111 to the circuit board 30 and the via V2 electrically connecting the second-conductivity-type layer 113 to the electrode layer 13.

[0016] The first conductivity type layer 111 is formed of, for example, an n-type GaN-based semiconductor material. The active layer 112 has, for example, a multiple quantum well structure in which InGaN and GaN are alternately stacked, and has a light emitting region within the layer. Light in the blue band of, for example, 430 nm or more and 500 nm or less is extracted from the active layer 112. In addition, light with a wavelength corresponding to, for example, the ultraviolet region (ultraviolet light) may also be extracted from the active layer 112. The second conductivity type layer 113 is formed of, for example, a p-type GaN-based semiconductor material.

[0017] The electrode electrically connected to the first conductivity type layer 111 is in ohmic contact with the first conductivity type layer 111 and is formed using a transparent conductive material such as a multilayer film (Ni / Au) of nickel (Ni) and gold (Au) or indium tin oxide (ITO). The electrode electrically connected to the second conductivity type layer 113 is in ohmic contact with the second conductivity type layer 113 and is formed using a multilayer film (Ti / Al) of titanium (Ti) and aluminum (Al), a multilayer film (Cr / Au) of chromium (Cr) and gold (Au), or a transparent conductive material such as ITO.

[0018] Although not shown, a laminated film made up of an insulating film and a reflective film is provided on the side surface of the light emitting element 11. This laminated film extends, for example, to an electrode provided on the first conductivity type layer 111 side, and the electrode is exposed to the outside from the laminated film.

[0019] The insulating layer 12 embeds the plurality of light-emitting elements 11 and forms a flat front surface (surface 10S1) and a back surface (surface 10S2) of the light-emitting section 10. The insulating layer 12 is formed of, for example, silicon oxide (SiO) or silicon nitride (SiN).

[0020] The electrode layer 13 is provided above the plurality of light-emitting elements 11 as a common electrode for the plurality of light-emitting elements 11. Specifically, the electrode layer 13 is embedded in the insulating layer 12, extends from the array section 100A to a part of the outer periphery section 100B, and forms a surface 10S1 together with the insulating layer 12. The electrode layer 13 is formed of a transparent electrode material such as ITO, indium zinc oxide (IZO), tin oxide (SnO), or TiO.

[0021] The wiring 14 is provided, for example, in the peripheral portion 100B of the circuit board 30 so as to surround the array portion 100A and is connected, for example, to an external terminal. As described above, the wiring 14 is electrically connected to the electrode layer 13 via the through wiring 15 and to the partition wall 21 via the through wiring 25. The wiring 14 is formed, for example, using copper (Cu), Al, Au, silver (Ag), Ti, or an alloy thereof. The wiring 14 may be formed as a single-layer film or a multilayer film using the above materials. For example, by forming a Ti film or a TiN film on the front and back surfaces of the wiring 14, reliability such as adhesion can be improved. The through wirings 15 and 25 are formed, for example, using Cu, Al, tungsten (W), Ag, or an alloy thereof. Similarly to the wiring 14, the through wirings 15 and 25 may have a Ti film or a TiN film formed on the front and back surfaces thereof. This can improve reliability such as adhesion.

[0022] The wavelength conversion section 20 is provided on the surface 10S1 side of the light emitting section 10. As described above, the wavelength conversion section 20 includes, for example, partition walls 21 having openings 21H for each light emitting element 11, and a wavelength conversion layer 22 provided in the openings 21H. A light reflecting film 23 is further provided between the partition walls 21 and the wavelength conversion layer 22. A protective layer 24 is further provided on the light extraction surface (surface 20S1) side of the wavelength conversion section 20.

[0023] The partition 21 corresponds to a specific example of a "partition" in the present disclosure. The partition 21 is intended to suppress color mixing due to light leakage between adjacent RGB sub-pixels (red pixel Pr, green pixel Pg, and blue pixel Pb) when the light-emitting device 1 is applied to the image display device 100. The partition 21 has, for example, a honeycomb structure. Specifically, as shown in FIG. 3 , the partition 21 has, for example, a substantially regular hexagonal opening 21H for each of the plurality of light-emitting elements 11 arranged in an array. In cross-sectional view, the opening 21H has, for example, a surface inclined at an angle of less than 90° with respect to the surface 20S2 of the wavelength conversion section 20 opposite to the surface 20S1. In other words, in cross-sectional view, the partition 21 has a forward tapered shape between adjacent color pixels Pr, Pg, and Pb. The partition 21 is preferably formed using a material with high thermal conductivity and electrical conductivity, such as a metal material such as Cu, Al, Au, nickel (Ni), or platinum (Pt).

[0024] The wavelength conversion layer 22 corresponds to a specific example of a "wavelength conversion layer" of the present disclosure. The wavelength conversion layer 22 converts light emitted from the plurality of light-emitting elements 11 into a desired wavelength (e.g., red (R) / green (G) / blue (B)) and emits the converted light, and is formed in an opening 21H provided above each light-emitting element 11. Specifically, the red pixel Pr is provided with a red wavelength conversion layer 22R that converts light emitted from the light-emitting element 11 into light in a red wavelength band (red light), the green pixel Pg is provided with a green wavelength conversion layer 22G that converts light emitted from the light-emitting element 11 into light in a green wavelength band (green light), and the blue pixel Pb is provided with a blue wavelength conversion layer 22B that converts light emitted from the light-emitting element 11 into light in a blue wavelength band (blue light).

[0025] Each of the wavelength conversion layers 22R, 22G, and 22B can be formed using quantum dots corresponding to each color. Specifically, when red light is to be obtained, the quantum dots can be selected from, for example, InP, GaInP, InAsP, CdSe, CdZnSe, CdTeSe, or CdTe. When green light is to be obtained, the quantum dots can be selected from, for example, InP, GaInP, ZnSeTe, ZnTe, CdSe, CdZnSe, CdS, or CdSeS. When blue light is to be obtained, the quantum dots can be selected from, for example, ZnSe, ZnTe, ZnSeTe, CdSe, CdZnSe, CdS, CdZnS, and CdSeS. Note that when blue light is emitted from the light-emitting element 11 as described above, the blue wavelength conversion layer 22B may be formed from a light-transmitting resin layer.

[0026] The light-reflecting film 23 corresponds to a specific example of a "light-reflecting film" in the present disclosure. The light-reflecting film 23 is provided on the side surface of the opening 21H to efficiently extract the color light emitted from the light-emitting element 11 and converted in each of the wavelength conversion layers 22R, 22G, and 22B from the light extraction surface (surface 22S1) of the wavelength conversion layer 22. The light-reflecting film 23 is formed using a metal material having light reflectivity. Examples of the metal material for forming the light-reflecting film 23 include metals having high reflectivity in the visible light range. Specific examples of the material include Ag, Al, Cu, Au, Pt, Rh, and alloys thereof.

[0027] It should be noted that the light reflecting film 23 does not necessarily have to be formed when the partition wall 21 is formed using the above-mentioned metal material having light reflectivity.

[0028] The protective layer 24 is for protecting the surface of the light emitting device 1, and is made of, for example, SiO or SiN.

[0029] The circuit board 30 is provided with a drive circuit and the like that controls the driving of the plurality of light-emitting elements 11 arranged in the array section 100A. A heat dissipation member 40 is provided on a surface (surface 30S2) of the circuit board 30 opposite to a surface 30S1 that faces the light-emitting section 10. The heat dissipation member 40 is, for example, a metal plate having high thermal conductivity, such as Cu. The metal plate may further be provided with a plurality of heat dissipation fins.

[0030] (1-2. Manufacturing Method of Light-Emitting Device) The light emitting device 1 of this embodiment can be manufactured, for example, as follows: FIGS. 4A to 4F show an example of a manufacturing process for the light emitting device 1. FIG.

[0031] First, as shown in FIG. 4A, a light emitting section 10 having a plurality of light emitting elements 11 on a surface 30S1 of a circuit board 30 and an electrode layer 13 continuous above the plurality of light emitting elements 11 is formed.

[0032] Next, as shown in FIG. 4B, a seed layer 21X made of, for example, Cu is formed on the surface 10S1 of the light-emitting section 10 by, for example, sputtering, and then a resist film 61 is patterned on the seed layer 21X by, for example, photolithography.

[0033] 4C, a Cu film to become the partition wall 21 is formed by, for example, electrolytic plating on the seed layer 21X exposed from the resist film 61. Next, as shown in FIG. 4D, after removing the resist film 61, the shape of the opening 21H is adjusted by etching, and the seed layer 21X exposed at the bottom of the opening 21H is removed. The shape of the opening 21H can be made forward tapered by, for example, forming the resist film 61 in a reverse tapered shape using photolithography technology.

[0034] Next, for example, an Ag film is formed as a light-reflecting film 23 on the upper surfaces of the partition walls 21 and the side and bottom surfaces of the openings 21H by, for example, chemical vapor deposition (CVD). Then, as shown in FIG. 4E, only the Ag film formed on the upper surfaces of the partition walls 21 and the bottom surfaces of the openings 21H is removed by, for example, anisotropic dry etching. This forms the light-reflecting film 23 on the side surfaces of the partition walls 21. Next, as shown in FIG. 4F, a wavelength conversion layer 22 is formed in the openings 21H by, for example, an inkjet method. After that, a protective layer 24 is formed on the partition walls 21 and the wavelength conversion layer 22, and then a heat dissipation member 40 is attached to the surface 30S2 of the circuit board 30. The light-emitting device 1 shown in FIG. 1 is thus completed.

[0035] The light emitting device 1 of this embodiment can be manufactured, for example, as follows: FIGS. 5A to 5C show another example of the manufacturing process for the light emitting device 1. FIG.

[0036] First, in the same manner as described above, the light emitting section 10 having the plurality of light emitting elements 11 on the surface 30S1 of the circuit board 30 and the electrode layer 13 continuous above the plurality of light emitting elements 11 is formed.

[0037] 5A, wavelength conversion layers 22 (22R, 22G, 22B) are formed above each light-emitting element 11 on the surface 10S1 of the light-emitting unit 10, for example, by photolithography. Subsequently, as shown in FIG. 5B, seed layers 21X made of, for example, Cu are formed on the electrode layer 13 and on the upper and side surfaces of the wavelength conversion layers 22 (22R, 22G, 22B) by, for example, sputtering, and then a Cu film to become the partition walls 21 is formed on the seed layers 21X by, for example, electroplating.

[0038] Next, as shown in FIG. 5C , the Cu film formed on the wavelength conversion layer 22 (22R, 22G, 22B) is removed by, for example, chemical mechanical polishing (CMP) to expose the wavelength conversion layer 22 (22R, 22G, 22B). Thereafter, a protective layer 24 is formed on the partition wall 21 and the wavelength conversion layer 22, and then a heat dissipation member 40 is attached to the surface 30S2 of the circuit board 30. This completes the light emitting device 1 shown in FIG. 1 .

[0039] The light emitting device 1 of this embodiment can be manufactured, for example, as follows: FIGS. 6A to 6C show another example of the manufacturing process for the light emitting device 1. FIG.

[0040] First, in the same manner as described above, the light emitting section 10 having the plurality of light emitting elements 11 on the surface 30S1 of the circuit board 30 and the electrode layer 13 continuous above the plurality of light emitting elements 11 is formed.

[0041] Next, as shown in FIG. 6A, a seed layer 21X made of, for example, Cu is formed on the surface 10S1 of the light-emitting section 10, and then the seed layer 21X is patterned by, for example, photolithography and etching.

[0042] Subsequently, as shown in FIG. 6B, wavelength conversion layers 22 (22R, 22G, 22B) are formed on the electrode layer 13 from which the seed layer 21X has been removed, for example, by photolithography. Next, as shown in FIG. 6C, a Cu film that will become the partition walls 21 is formed on the seed layer 21X, for example, by electrolytic plating. After the Cu film is formed, its surface may be polished, for example, by CMP, to make the height of the partition walls 21 uniform. Thereafter, a protective layer 24 is formed on the partition walls 21 and the wavelength conversion layer 22, and then a heat dissipation member 40 is bonded to the surface 30S2 of the circuit board 30. In this manner, the light-emitting device 1 shown in FIG. 1 is completed.

[0043] (1-3. Actions and Effects) In the light-emitting device 1 of this embodiment, a wavelength conversion section 20 is provided on a surface 10S1 of a light-emitting section 10 having a plurality of light-emitting elements 11 arranged in an array, the wavelength conversion section 20 including, for example, partition walls 21 having openings 21H for each light-emitting element 11 and a wavelength conversion layer 22 provided in the openings 21H. The partition walls 21 are made of a metal material, which suppresses a temperature rise in the wavelength conversion layer 22. This will be described below.

[0044] In recent years, high-definition image display devices using light-emitting devices with solid-state light-emitting elements such as LEDs as light sources have become widespread. In such light-emitting devices, for example, multiple LEDs are arranged in a two-dimensional array, and a color conversion layer is disposed above them.

[0045] In a light-emitting device having such a configuration, when the injected current value increases with an increase in luminance, the temperature of the color conversion layer rises, resulting in a problem of a decrease in power-luminance efficiency.

[0046] In contrast to this, in the present embodiment, in the wavelength conversion section 20 disposed on the surface 10S1 of the light-emitting section 10 having a plurality of light-emitting elements 11 arranged in an array, the partition walls 21 separating the wavelength conversion layers 22 are formed using a metal material. As a result, heat generated in the wavelength conversion layers 22 when the light-emitting device 1 is driven is dissipated from the upper surfaces (surfaces 21S1) of the partition walls 21, thereby making it possible to reduce the temperature rise of the wavelength conversion layers 22.

[0047] As described above, by applying the light emitting device 1 of this embodiment to an image display device, it is possible to improve the display quality thereof.

[0048] Furthermore, in the light emitting device 1 of the present embodiment, in the peripheral portion 100B around the array portion 100A in which the plurality of light emitting elements 11 are arranged in an array, the partition walls 21 made of a metal material are connected to the wiring 14 provided on the circuit board 30 via, for example, through-hole wiring 25. This allows heat generated in the wavelength conversion layer 22 when the light emitting device 1 is driven to be dissipated not only from the surface 21S1 of the partition walls 21 but also from the circuit board 30 side. This makes it possible to further reduce the temperature rise and further improve the display quality of an image display device equipped with the same.

[0049] Furthermore, as described above, in a typical light-emitting device in which multiple LEDs are arranged in a two-dimensional array, the effect of wiring resistance becomes more pronounced, resulting in the problem of uneven light emission within the surface of the array section consisting of multiple light-emitting elements.

[0050] In contrast, in the light-emitting device 1 of the present embodiment, an electrode layer 13 common to the plurality of light-emitting elements 11 is provided on the surface 10S1 of the light-emitting section 10, and this electrode layer 13 is electrically connected to the partition walls 21. As a result, the current flowing through the electrode layer 13, which is generally made of a highly resistive transparent electrode material, flows through the partition walls 21, which have a lower resistance, thereby reducing the current loss that occurs when passing through the electrode layer 13. In other words, the wiring resistance within the plane of the array section 100A is reduced. Therefore, by applying the light-emitting device 1 of the present embodiment to an image display device, non-uniform light emission within the plane of the display section can be reduced, and the display quality can be further improved.

[0051] Furthermore, in the light-emitting device 1 of the present embodiment, the heat dissipation member 40 is disposed on the surface 30S2 side of the circuit board 30, so that the heat generated by the wavelength conversion layer 22 is dissipated from the heat dissipation member 40 via the partition wall 21, the through-hole wiring 25, and the circuit board 30. This allows the heat generated by the wavelength conversion layer 22 to be dissipated efficiently. This further reduces the temperature rise, and further improves the display quality of an image display device equipped with the same.

[0052] Furthermore, in the light-emitting device 1 of this embodiment, a light-reflecting film 23 is formed on the side surface of the opening 21H of the partition 21, so that the light (red light, green light, and blue light) wavelength-converted in the wavelength conversion layer 22 (22R, 22G, 22B) can be efficiently extracted from the upper surface (surface 22S1) of the wavelength conversion layer 22.

[0053] Next, first to eighth modifications and application examples of the present disclosure will be described. Note that components corresponding to the light emitting device 1 of the above embodiment will be given the same reference numerals and descriptions thereof will be omitted.

[0054] <2. Modifications> (2-1. Variation 1) 7 is a schematic diagram illustrating an example of a cross-sectional configuration of a light-emitting device (light-emitting device 1A) according to Modification 1 of the present disclosure. Similar to the above-described embodiment, light-emitting device 1A is suitably applicable to the display portion of an image display device (image display device 100) known as a so-called LED display. Light-emitting device 1A of this modification differs from the above-described embodiment in that a dielectric film 26 is further laminated on light-reflecting film 23 formed on the side surface of opening 21H of partition wall 21.

[0055] The dielectric film 26 corresponds to a specific example of a "dielectric film" in the present disclosure. The dielectric film 26 is intended to reduce elution of metal from the partition walls 21 and the light reflecting film 23 into the wavelength conversion layers 22 (22R, 22G, 22B). The dielectric film 26 is formed of a single layer or a multilayer film of an oxide, nitride, or fluoride of, for example, silicon (Si), magnesium (Mg), Al, Hf, niobium (Nb), zirconium (Zr), scandium (Sc), tantalum (Ta), gallium (Ga), zinc (Zn), yttrium (Y), boron (B), titanium (Ti), or the like.

[0056] As described above, in this modification, the dielectric film 26 is formed between the light reflecting film 23 and the wavelength conversion layer 22 (22R, 22G, 22B). This reduces corrosion of the light reflecting film 23 and deterioration of the wavelength conversion layer 22 (22R, 22G, 22B). Therefore, in addition to the effects of the above embodiment, it is possible to improve the lifespan of the light emitting device 1A.

[0057] Furthermore, by setting the thickness of the dielectric film 26 to an appropriate value and forming the dielectric film 26 into multiple layers in consideration of the refractive index, the dielectric film 26 can have a so-called dielectric multilayer mirror structure. As a result, the light emitting device 1A of this modification can obtain a high reflectance without absorbing the light reflected from the light-reflecting film 23.

[0058] (2-2. Variation 2) 8 is a schematic diagram illustrating an example of a cross-sectional configuration of a light-emitting device (light-emitting device 1B) according to Modification 2 of the present disclosure. Similar to the above-described embodiment, light-emitting device 1B is suitably applicable to the display unit of an image display device (image display device 100) known as a so-called LED display. Light-emitting device 1B of this modification differs from the above-described embodiment in that partition walls 21 and wiring 14 are connected to each light-emitting element 11, for example, in array section 100A, via through wiring 15, for example.

[0059] In this manner, in this modification, the partition walls 21 made of a metal material and the wiring 14 provided on the circuit board 30 are connected for each of one or more light-emitting elements 11 via the through wiring 25. This further reduces current loss due to the electrode layer 13 compared to the light-emitting device 1 of the above embodiment. This further reduces non-uniform light emission within the display surface of an image display device including the light-emitting device 1B of this modification, making it possible to further improve display quality.

[0060] (2-3. Variation 3) 9 is a schematic diagram illustrating an example of a cross-sectional configuration of a light-emitting device (light-emitting device 1C) according to Modification 3 of the present disclosure. Similar to the above-described embodiment, light-emitting device 1C is suitably applicable to the display section of an image display device (image display device 100) known as a so-called LED display. Light-emitting device 1C of this modification differs from the above-described embodiment in that partition wall 21 has a laminated structure including separation section 21A made of a semiconductor material such as silicon and separation section 21B made of a metal material.

[0061] The partition wall 21 of this modified example has a laminated structure in which a separation portion 21A and a separation portion 21B are laminated in this order from the light-emitting portion 10 side. The separation portion 21A corresponds to a specific example of a "first partition wall portion" of the present disclosure and is formed using, for example, silicon, and has an insulating film 27, for example, formed on its surface. The insulating film 27 is formed using, for example, SiO or SiN. The separation portion 21B corresponds to a specific example of a "second partition wall portion" of the present disclosure and is formed using a metal material, as in the above embodiment.

[0062] For example, in the light-emitting device 1 of the above embodiment, as shown in FIG. 4B, the partition 21 is formed to reflect the shape of the resist film 61, but the larger the ratio of the bottom area to the height of the resist film 61 (height ÷ bottom area), i.e., the aspect ratio, the more difficult it becomes to form a uniform shape.

[0063] In contrast, in this modification, the partition 21 has a laminated structure of, for example, separation portion 21A made of silicon and separation portion 21B made of a metal material, so that the height of the resist film 61 corresponds to the height of separation portion 21B, thereby enabling the formation of a more uniform partition 21. The angle of the partition 21 affects the light extraction efficiency. Therefore, the light emitting device 1C of this modification can further improve the display quality.

[0064] (2-4. Variation 4) 10 is a schematic diagram illustrating an example of a cross-sectional configuration of a light-emitting device (light-emitting device 1D) according to Modification 4 of the present disclosure. Similar to the above-described embodiment, light-emitting device 1D is suitably applicable to the display unit of an image display device (image display device 100) known as a so-called LED display. In Modification 3, an example was shown in which separation portion 21A and separation portion 21B constituting the stacked structure form a continuous, forward-tapered inclined surface in cross section, similar to the above-described embodiment, but the present invention is not limited to this.

[0065] For example, the angle of inclination of the side surface of separation unit 21B that forms opening 21H relative to surface 10S1 may be larger than the angle of inclination of the side surface of separation unit 21A that forms opening 21H relative to surface 10S1. Specifically, as shown in FIG. 10, the side surface of separation unit 21A may be a forward tapered inclined surface, and the side surface of separation unit 21B may be, for example, a surface that is approximately perpendicular to surface 10S1 of light-emitting unit 10. This allows the volume of wavelength conversion layer 22 to be increased. Therefore, higher brightness can be obtained.

[0066] (2-5. Variation 5) FIG. 11 is a schematic diagram showing an example of a cross-sectional configuration of a light-emitting device (light-emitting device 1E) according to Modification 5 of the present disclosure. FIG. 12 is a schematic diagram showing an example of a planar configuration of the wavelength conversion section 20 of the light-emitting device 1E shown in FIG. 11. As with the above-described embodiment, the light-emitting device 1E is suitably applicable to the display section of an image display device (image display device 100) known as a so-called LED display. The light-emitting device 1E of this modification differs from the above-described embodiment in that it has different aperture widths Wr, Wg, and Rb for each of the color pixels Pr, Pg, and Pb.

[0067] The quantum dots constituting each wavelength conversion layer 22R, 22G, 22B differ in wavelength conversion efficiency depending on the type. For example, quantum dots corresponding to green generally have lower wavelength conversion efficiency than quantum dots corresponding to red. Furthermore, when blue light is emitted from the light emitting element 11, the blue wavelength conversion layer 22B can be formed of a light-transmitting resin layer as described above, so there is no loss due to wavelength conversion. Therefore, the opening widths Wr, Wg, Rb at which each wavelength conversion layer 22R, 22G, 22B is formed may be, for example, Wr > Wg > Rb depending on the wavelength conversion efficiency. Accordingly, the widths of the partitions between adjacent wavelength conversion layers 22R, 22G, 22B (between the red wavelength conversion layer 22R and the green wavelength conversion layer 22G (Drg)), between the green wavelength conversion layer 22G and the blue wavelength conversion layer 22B (Dgb), and between the blue wavelength conversion layer 22B and the red wavelength conversion layer 22R (Dbr)) may be, for example, Drg <Dbr<Dgbとなる。

[0068] In this way, the aperture widths Wr, Wg, and Rb, which differ for each color pixel Pr, Pg, and Pb, may be changed, for example, according to the wavelength conversion efficiency of each wavelength conversion layer 22R, 22G, and 22B. This reduces color shifts due to the wavelength conversion efficiency of each wavelength conversion layer 22R, 22G, and 22B. This further improves display quality.

[0069] (2-6. Variation 6) 13 is a schematic diagram illustrating an example of a cross-sectional configuration of a light-emitting device (light-emitting device 1F) according to Modification 6 of the present disclosure. Similar to the above-described embodiment, light-emitting device 1F is suitably applicable to the display unit of an image display device (image display device 100) known as a so-called LED display. Light-emitting device 1F of this modification uses a plurality of light-emitting elements 51 having a different shape from the plurality of light-emitting elements 11 of the above-described embodiment.

[0070] The light-emitting element 51 has a first-conductivity-type layer 511, an active layer 512, and a second-conductivity-type layer 513 stacked in this order, with the second-conductivity-type layer 513 serving as a light extraction surface S1 (surface 50S1). The light-emitting element 51 has a columnar mesa portion M including the first-conductivity-type layer 511 and the active layer 512, and has a step on the surface (surface 50S2) opposite to the surface 50S1, which is formed by a convex portion exposing the first-conductivity-type layer 511 and a concave portion exposing the second-conductivity-type layer 513. Although not shown, the light-emitting element 51 further has electrodes electrically connected to the first-conductivity-type layer 511 and the second-conductivity-type layer 513, respectively. These electrodes are provided on the surface 50S2 side and electrically connected to the circuit board 30 via vias V1 and V2, respectively.

[0071] Although not shown, a laminated film made of an insulating film and a reflective film is provided on the side surfaces of the first conductivity type layer 511, the active layer 512, and the second conductivity type layer 513 of the light emitting element 51. This laminated film extends, for example, to electrodes provided on the first conductivity type layer 511 and the second conductivity type layer 513, and the electrodes are exposed to the outside from the laminated film.

[0072] In this way, the light emitting device 1F of this modified example uses a light emitting element 51 having an electrode extending from one side, unlike the above embodiment. In this case, the same effects as those of the above embodiment can be obtained.

[0073] (2-7. Variation 7) 14 is a schematic diagram illustrating an example of a cross-sectional configuration of a light emitting device (light emitting device 1G) according to Modification 7 of the present disclosure. Similar to the above-described embodiment, light emitting device 1G is suitably applicable to the display unit of an image display device (image display device 100) known as a so-called LED display. Light emitting device 1G of this modification differs from Modification 6 in that partition wall 21 penetrates all the way to circuit board 30, and light emitting section 50 and wavelength conversion section 20 are formed together.

[0074] The light emitting device 1G of this modified example can be manufactured, for example, as follows: Figures 15A to 15I show an example of a manufacturing process for the light emitting device 1G.

[0075] 15A, first conductivity type layer 511, active layer 512, and second conductivity type layer 513 are formed on growth substrate 52 by epitaxial crystal growth using, for example, metalorganic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE). Next, as shown in FIG. 15B, first conductivity type layer 511, active layer 512, second conductivity type layer 513, and growth substrate 52 are separated by, for example, photolithography and etching to cut out multiple light-emitting elements 51 having a mesa structure. Furthermore, electrodes are formed on first conductivity type layer 511 and second conductivity type layer 513.

[0076] 15C, an insulating layer 12 is formed to fill in the irregularities on the surface 50S2 side of the light-emitting element 51 and to cover the side surfaces of the light-emitting element 51 and the side and bottom surfaces of the growth substrate 52. Subsequently, as shown in FIG. 15D, a seed layer 21X made of, for example, Cu is formed on the insulating layer 12 by, for example, sputtering.

[0077] 15E, a Cu film that will become the partition wall 21 is formed on the seed layer 21X, for example, by electrolytic plating. Subsequently, as shown in FIG. 15F, the Cu film formed on the light-emitting element 51 is removed, for example, by CMP, to expose the insulating layer 12 provided on the light-emitting element 51. Next, as shown in FIG. 15G, vias V1 and V2 connected to the electrodes provided on the first conductivity type layer 511 and the second conductivity type layer 513 are formed, and then the circuit board 30 is attached to the surface 50S2 of the light-emitting unit 50.

[0078] 15H, the growth substrate 52 is removed by, for example, etching to form an opening 21H, and then a light-reflecting film 23 is formed on the side surface of the opening 21H. Next, as shown in FIG. 15I, a wavelength conversion layer 22 is formed in the opening 21H by, for example, a coating method. Thereafter, a protective layer 24 is formed on the partition wall 21 and the wavelength conversion layer 22, and then a heat dissipation member 40 is bonded to the surface 30S2 of the circuit board 30. This completes the light-emitting device 1G shown in FIG. 14.

[0079] As described above, in this modification, the light-emitting section 50 and the wavelength conversion section 20 are formed together, and the partition walls 21 are in direct contact with the circuit board 30. This allows the partition walls 21 to dissipate heat not only from the wavelength conversion layer 22 but also from the light-emitting element 51. Therefore, in addition to the effects of the above-described embodiment, the light-emitting efficiency of the light-emitting element 51 can be improved. Furthermore, the light-emitting device 1G of this modification has high optical coupling between the light-emitting element 51 and the wavelength conversion layer 22, and there is little optical loss due to light leakage from both interfaces. This makes it possible to further improve display quality.

[0080] (2-8. Variation 8) In the above-described embodiments, the partition wall 21 has an approximately regular hexagonal opening 21H for each of the color pixels Pr, Pg, and Pb. However, the planar shape of the opening 21H is not limited to this. For example, as shown in FIG. 16, rectangular openings 21H may be provided. In this case, the light-emitting elements 11 and the openings 21H may be arranged two-dimensionally, for example, in a matrix. The openings 21H do not necessarily have to be the same size. For example, the size of the openings 21H (wavelength conversion layer 22 (22R, 22G, 22B)) may be different for each of the color pixels Pr, Pg, and Pb, as in Modification 5, as shown in FIG. 17.

[0081] <3. Application Examples> (Application example 1) 18 is a perspective view showing an example of a schematic configuration of an image display device (image display device 100). The image display device 100 is a so-called LED display, and uses a light-emitting device according to the present disclosure (for example, the light-emitting device 1) as a display pixel. As shown in FIG. 18, the image display device 100 includes a display panel 110 and a control circuit 140 that drives the display panel 110.

[0082] The display panel 110 is formed by overlapping a mounting substrate 120 and an opposing substrate 130. The surface of the opposing substrate 130 serves as an image display surface, with a display area (display section 110A) in the center and a frame section 110B, which is a non-display area, surrounding the display area.

[0083] 19 shows an example of a wiring layout in a region corresponding to the display unit 110A on the surface of the mounting substrate 120 facing the counter substrate 130. In the region corresponding to the display unit 110A on the surface of the mounting substrate 120, for example, as shown in FIG. 19, a plurality of data wirings 121 are formed extending in a predetermined direction and arranged in parallel at a predetermined pitch. In the region corresponding to the display unit 110A on the surface of the mounting substrate 120, a plurality of scan wirings 122 are further formed extending in a direction intersecting (for example, perpendicular to) the data wirings 121 and arranged in parallel at a predetermined pitch. The data wirings 121 and the scan wirings 122 are made of a conductive material such as Cu.

[0084] The scan lines 122 are formed, for example, in the outermost layer, for example, on an insulating layer (not shown) formed on the surface of a substrate. The substrate of the mounting board 120 is made of, for example, a silicon substrate or a resin substrate, and the insulating layer on the substrate is made of, for example, SiN, SiO, aluminum oxide (AlO), or a resin material. On the other hand, the data lines 121 are formed in a layer different from the outermost layer including the scan lines 122 (for example, a layer below the outermost layer), for example, in an insulating layer on the substrate.

[0085] The display pixels 123 are located near the intersections of the data lines 121 and the scan lines 122, and a plurality of the display pixels 123 are arranged in a matrix within the display unit 110A. Each of the display pixels 123 includes, for example, one of the color pixels Pr, Pg, and Pb of the light emitting device 1.

[0086] The light emitting device 1 is provided with a pair of terminal electrodes, for example, one for each of the color pixels Pr, Pg, and Pb, or one common and the other for each of the color pixels Pr, Pg, and Pb. One of the terminal electrodes is electrically connected to a data line 121, and the other is electrically connected to a scan line 122. For example, one of the terminal electrodes is electrically connected to a pad electrode 121B at the tip of a branch 121A provided on the data line 121. Furthermore, for example, the other terminal electrode is electrically connected to a pad electrode 122B at the tip of a branch 122A provided on the scan line 122.

[0087] Each of the pad electrodes 121B, 122B is formed, for example, on the outermost layer and provided, for example, at a location where each of the light emitting devices 1 is mounted, as shown in Fig. 19. Here, the pad electrodes 121B, 122B are made of a conductive material such as Au (gold).

[0088] The mounting substrate 120 is further provided with, for example, a plurality of support pillars (not shown) that regulate the distance between the mounting substrate 120 and the counter substrate 130. The support pillars may be provided in the area facing the display unit 110A, or in the area facing the frame unit 110B.

[0089] The counter substrate 130 is made of, for example, a glass substrate or a resin substrate. The surface of the counter substrate 130 facing the light emitting device 1 may be flat, but is preferably roughened. The roughened surface may be provided over the entire area facing the display unit 110A, or may be provided only in the area facing the display pixels 123. The roughened surface has fine irregularities that allow light emitted from the color pixels Pr, Pg, and Pb to enter the roughened surface. The irregularities on the roughened surface can be created by, for example, sandblasting or dry etching.

[0090] The control circuit 140 drives each display pixel 123 (each light-emitting device 1) based on a video signal. The control circuit 140 is configured, for example, by a data driver that drives data wiring 121 connected to the display pixels 123, and a scan driver that drives scan wiring 122 connected to the display pixels 123. The control circuit 140 may be provided separately from the display panel 110 and connected to the mounting substrate 120 via wiring, or may be mounted on the mounting substrate 120, as shown in FIG. 18 .

[0091] (Application example 2) 20 is a perspective view showing another example configuration of an image display device (image display device 200) using a light-emitting device (e.g., light-emitting device 1) according to the present disclosure. The image display device 200 is a so-called tiling display that uses a plurality of light-emitting devices that use LEDs as light sources. For example, as shown in FIG. 20, the image display device 200 includes a display panel 210 and a control circuit 240 that drives the display panel 210.

[0092] The display panel 210 is formed by stacking a mounting substrate 220 and a counter substrate 230 on top of each other. The surface of the counter substrate 230 serves as an image display surface, with a display section in the center and a frame section, which is a non-display area, around it (neither is shown). The counter substrate 230 is disposed in a position opposite the mounting substrate 220, for example, with a predetermined gap therebetween. Note that the counter substrate 230 may be in contact with the upper surface of the mounting substrate 220.

[0093] Fig. 21 is a schematic diagram showing an example of the configuration of the mounting board 220. For example, as shown in Fig. 21, the mounting board 220 is made up of a plurality of unit boards 250 arranged in a tiled pattern. Note that Fig. 21 shows an example in which the mounting board 220 is made up of nine unit boards 250, but the number of unit boards 250 may be ten or more, or eight or less.

[0094] FIG. 22 shows an example of the configuration of a unit substrate 250. The unit substrate 250 has, for example, a plurality of light emitting devices 1 arranged in a tiled pattern and a support substrate 260 that supports each of the light emitting devices 1. Each unit substrate 250 also has a control substrate (not shown). The support substrate 260 is made of, for example, a metal frame (metal plate) or a wiring substrate. If the support substrate 260 is made of a wiring substrate, it can also serve as the control substrate. In this case, at least one of the support substrate 260 and the control substrate is electrically connected to each of the light emitting devices 1.

[0095] (Application example 3) 23 shows the appearance of a transparent display 300. The transparent display 300 includes, for example, a display unit 310, an operation unit 311, and a housing 312. The display unit 310 uses a light-emitting device (for example, the light-emitting device 1) of the present disclosure. The transparent display 300 can display images and text information while allowing the background of the display unit 310 to be seen through.

[0096] In the transparent display 300, a light-transmitting substrate is used as the mounting substrate. Each electrode provided in the light-emitting device 1 is formed using a light-transmitting conductive material, similar to the mounting substrate. Alternatively, each electrode is structured to be less visible by increasing the wiring width or reducing the wiring thickness. In addition, the transparent display 300 can display black by, for example, overlaying a liquid crystal layer equipped with a drive circuit, and switching between transparent and black display is possible by controlling the light distribution direction of the liquid crystal.

[0097] Although the present technology has been described above with reference to the embodiments, variations 1 to 8, and application examples, the present technology is not limited to the above-described embodiments, etc., and various modifications are possible. For example, in the above-described embodiments, etc., examples have been shown in which the light emitted from the light-emitting element 11 is blue light or ultraviolet light, but the present technology is not limited to this. For example, the light-emitting device 1 may use a light-emitting element that emits two or more types of light, such as blue light and green light, or ultraviolet light and green light.

[0098] In addition, in the above-described embodiments, each component constituting the light emitting device 1 etc. has been specifically described, but it is not necessary to include all of the components, and other components may also be included. For example, when the partition wall 21 is directly stacked on the electrode layer 13 and the partition wall 21 and the wiring 14 are electrically connected via the through wiring 15, the through wiring 15 that electrically connects the electrode layer 13 and the wiring 14 may be omitted.

[0099] The effects described in this specification are merely examples and are not limited to those described, and other effects may also be obtained.

[0100] The present technology can also be configured as follows. According to the present technology configured as follows, a partition wall that is disposed above a plurality of light-emitting elements arranged in an array and separates the wavelength conversion layer that converts the wavelength of light emitted from the plurality of light-emitting elements for each light-emitting element is formed using a metal material. This suppresses the temperature rise of the wavelength conversion layer, thereby enabling improvement in display quality. (1) a substrate having opposing first and second surfaces; a plurality of light-emitting elements arranged in an array on the first surface side of the substrate; a partition wall formed of a metal material above the plurality of light-emitting elements, the partition wall having an opening for each of the plurality of light-emitting elements; a wavelength conversion layer provided within the opening for converting the wavelength of light emitted from the plurality of light-emitting elements; Equipped with the partition wall has a laminated structure of a first partition wall portion formed using a semiconductor material and a second partition wall portion formed using the metal material, The first partition wall portion and the second partition wall portion are laminated in this order from the substrate side. Light-emitting device. (2) The light emitting element further includes an array section in which the plurality of light emitting elements are arranged in an array, and a peripheral section provided around the array section, The light-emitting device according to (1), wherein the partition wall is connected to the substrate at the outer periphery. (3) The light emitting element further includes an array section in which the plurality of light emitting elements are arranged in an array, and a peripheral section provided around the array section, The light emitting device according to (1), wherein the partition wall is connected to the substrate for each of one or more light emitting elements in the array portion. (4) an electrode layer common to the plurality of light-emitting elements is further provided between the plurality of light-emitting elements and the partition wall and the wavelength conversion layer; The light-emitting device according to any one of (1) to (3), wherein the partition wall is electrically connected to the electrode layer. (5) The light emitting device according to any one of (1) to (4), wherein the partition wall further has a light reflecting film on a side surface of the opening. (6) The light emitting device according to any one of (1) to (5), wherein the partition wall further has a dielectric film on a side surface of the opening. (7) The light-emitting device according to any one of (1) to (6), wherein the partition further extends between adjacent ones of the plurality of light-emitting elements, and the plurality of light-emitting elements and the wavelength conversion layer are integrated by the partition. (8 ) before the first partition wall further has an insulating film continuous with a side surface defining the opening and an upper surface facing the second partition wall; Any one of the above (1) to (7) The light emitting device according to claim 1. (9) a first inclination angle of a first side surface of the first partition wall portion constituting the opening relative to the first surface of the substrate is smaller than a second inclination angle of a second side surface of the second partition wall portion constituting the opening relative to the first surface of the substrate; Any one of the above (1) to (8) The light emitting device according to claim 1. (10) the light-emitting elements include a first light-emitting element, a second light-emitting element, and a third light-emitting element that emit a first light; the wavelength conversion layers include a first wavelength conversion layer disposed above the first light-emitting element, a second wavelength conversion layer disposed above the second light-emitting element, and a third wavelength conversion layer disposed above the third light-emitting element; the first wavelength conversion layer converts the first light into red light; the second wavelength conversion layer converts the first light into green light; the third wavelength conversion layer transmits or converts the first light into blue light; Any one of the above (1) to (9) The light emitting device according to claim 1. (11) the widths of the openings in which the first wavelength conversion layer, the second wavelength conversion layer, and the third wavelength conversion layer are provided are different from one another; (10) The light emitting device according to claim 1. (12) The wavelength conversion layer is formed using a plurality of quantum dots. Any one of the above (1) to (11) The light emitting device according to claim 1. (13) the third wavelength conversion layer is composed of a resin layer having optical transparency. Any one of the above (10) to (12) The light emitting device according to claim 1. (14) The light-emitting element is a light-emitting diode having an emission wavelength in the blue band or ultraviolet band. Any one of the above (1) to (13) The light emitting device according to claim 1. (15) further comprising a heat dissipation member disposed on the second surface of the substrate; Any one of the above (1) to (14) The light emitting device according to claim 1. (16) A light emitting device is provided, The light emitting device comprises: a substrate having opposing first and second surfaces; a plurality of light-emitting elements arranged in an array on the first surface side of the substrate; a partition wall formed of a metal material above the plurality of light-emitting elements, the partition wall having an opening for each of the plurality of light-emitting elements; a wavelength conversion layer provided within the opening for converting the wavelength of light emitted from the plurality of light-emitting elements; and the partition wall has a laminated structure of a first partition wall portion formed using a semiconductor material and a second partition wall portion formed using the metal material, The first partition wall portion and the second partition wall portion are laminated in this order from the substrate side. Image display device.

[0101] This application claims priority based on Japanese Patent Application No. 2021-082674, filed on May 14, 2021, with the Japan Patent Office, the entire contents of which are incorporated herein by reference.

[0102] Those skilled in the art will recognize that various modifications, combinations, subcombinations, and variations may occur depending on design requirements and other factors, and are intended to be within the scope of the appended claims and their equivalents.

Claims

1. a substrate having opposing first and second surfaces; a plurality of light-emitting elements arranged in an array on the first surface side of the substrate; a partition wall formed of a metal material above the plurality of light-emitting elements, the partition wall having an opening for each of the plurality of light-emitting elements; a wavelength conversion layer provided in the opening and configured to convert the wavelength of light emitted from the plurality of light-emitting elements; the partition wall has a laminated structure of a first partition wall portion formed using a semiconductor material and a second partition wall portion formed using the metal material, The first partition wall portion and the second partition wall portion are stacked in this order from the substrate side. Light-emitting device.

2. The light emitting element further includes an array section in which the plurality of light emitting elements are arranged in an array, and a peripheral section provided around the array section, The light emitting device according to claim 1 , wherein the partition wall is connected to the substrate at the outer periphery.

3. The light emitting element further includes an array section in which the plurality of light emitting elements are arranged in an array, and a peripheral section provided around the array section, The light-emitting device according to claim 1 , wherein the partition wall is connected to the substrate for each of one or more light-emitting elements in the array portion.

4. an electrode layer common to the plurality of light-emitting elements is further provided between the plurality of light-emitting elements and the partition wall and the wavelength conversion layer; The light-emitting device according to claim 1 , wherein the partition wall is electrically connected to the electrode layer.

5. The light emitting device according to claim 1 , wherein the partition wall further includes a light reflecting film on a side surface of the opening.

6. The light emitting device according to claim 1 , wherein the partition wall further includes a dielectric film on a side surface of the opening.

7. The light emitting device according to claim 1 , wherein the partition wall further extends between adjacent ones of the plurality of light emitting elements, and the plurality of light emitting elements and the wavelength conversion layer are integrated by the partition wall.

8. The light-emitting device according to claim 1 , wherein the first partition wall further includes an insulating film that is continuous with a side surface that defines the opening and an upper surface that faces the second partition wall.

9. 2. The light-emitting device according to claim 1, wherein a first inclination angle of a first side surface of the first partition portion constituting the opening relative to the first surface of the substrate is smaller than a second inclination angle of a second side surface of the second partition portion constituting the opening relative to the first surface of the substrate.

10. the light-emitting elements include a first light-emitting element, a second light-emitting element, and a third light-emitting element that emit a first light; the wavelength conversion layer includes a first wavelength conversion layer disposed above the first light-emitting element, a second wavelength conversion layer disposed above the second light-emitting element, and a third wavelength conversion layer disposed above the third light-emitting element, the first wavelength conversion layer converts the first light into red light; the second wavelength conversion layer converts the first light into green light; The light emitting device of claim 1 , wherein the third wavelength conversion layer transmits or converts the first light into blue light.

11. The light emitting device according to claim 10 , wherein the widths of the openings in which the first wavelength conversion layer, the second wavelength conversion layer, and the third wavelength conversion layer are provided are different from one another.

12. The light emitting device according to claim 1 , wherein the wavelength conversion layer is formed using a plurality of quantum dots.

13. The light emitting device according to claim 10 , wherein the third wavelength conversion layer is made of a resin layer having optical transparency.

14. 2. The light emitting device according to claim 1, wherein the light emitting element is a light emitting diode having an emission wavelength in the blue band or the ultraviolet band.

15. The light emitting device according to claim 1 , further comprising a heat dissipation member disposed on the second surface of the substrate.

16. A light emitting device is provided, The light emitting device comprises: a substrate having opposing first and second surfaces; a plurality of light-emitting elements arranged in an array on the first surface side of the substrate; a partition wall formed of a metal material above the plurality of light-emitting elements, the partition wall having an opening for each of the plurality of light-emitting elements; a wavelength conversion layer provided in the opening and configured to convert the wavelength of light emitted from the plurality of light-emitting elements; the partition wall has a laminated structure of a first partition wall portion formed using a semiconductor material and a second partition wall portion formed using the metal material, The first partition wall portion and the second partition wall portion are stacked in this order from the substrate side. Image display device.

Images