Gas distribution element and heat treatment device including same

Abstract

To provide a gas distribution device and a heat treatment apparatus including the gas distribution device.SOLUTION: A gas distribution device includes at least two regions having different hole distribution densities. Specifically, the gas distribution device includes a first region defined by extending radially outward from a geometric center by only a first distance, and a second region defined by extending radially from an outermost edge toward the geometric center by only a second distance, and the first region and the second region have holes having different distribution densities, respectively. According to the gas distribution device, a small amount of gas in a reaction chamber of a heat treatment apparatus can form a uniform airflow in the chamber under a low-pressure environment, and the difference between the center and the edge portion on the surface of a workpiece to be treated can be eliminated.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to the field of semiconductor manufacturing, and more particularly to a gas distribution element and a thermal processing apparatus including the gas distribution element. [Background technology]

[0002] In conventional atmospheric pressure annealing devices, gas can be introduced from the top of the reaction chamber, from the side of the reaction chamber, or from both the top and side. However, in low-pressure devices, the gas volume is small, so the above gas introduction methods often cannot meet the process needs. Summary of the Invention [Problem to be solved by the invention]

[0003] The present invention provides a gas distribution element and a thermal processing apparatus including the gas distribution element. [Means for solving the problem]

[0004] According to one aspect of the present invention, there is provided a gas distribution element including at least two regions with different hole distribution densities, the gas distribution element including a first region defined by extending radially outward from a geometric center by a first distance and a second region defined by extending radially from an outermost edge toward the geometric center by a second distance, the first region and the second region each having holes with different distribution densities.

[0005] According to another aspect of the present invention, there is provided a heat treatment apparatus including a gas distribution element as described above, the gas distribution element being disposed inside a sidewall at an intake end of the heat treatment apparatus.

[0006] It should be understood that the contents described herein are not intended to describe key or important features of the embodiments of the present invention, nor should they be used to limit the scope of the present invention. Other features of the present invention can be better understood through the following specification.

[0007] The accompanying drawings are provided for a better understanding of the present invention and are not intended to limit the present invention. [Brief explanation of the drawings]

[0008] [Figure 1] 1 is a cross-sectional view of a gas distribution element according to the prior art; [Figure 2] 1 is a cross-sectional view of a gas distribution element according to one embodiment of the present invention. [Figure 3] 10 is a cross-sectional view of a gas distribution element according to another embodiment of the present invention. [Figure 4] 10 is a cross-sectional view of a gas distribution element according to yet another embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0009]

[0023] Hereinafter, exemplary embodiments of the present disclosure will be described with reference to the drawings. Various details of the embodiments of the present disclosure will be included in the description to facilitate understanding, but these details should be considered merely as examples. Therefore, those skilled in the art should recognize that various changes and modifications can be made to the embodiments described herein without departing from the scope and spirit of the present disclosure. Similarly, in the following description, descriptions of well-known functions and structures are omitted for clarity and conciseness.

[0010] In low-pressure heat treatment equipment for semiconductor workpieces, the pressure is relatively low, e.g., 1 to 20 Torr. Therefore, the amount of gas inside the device is small, which can easily lead to uneven gas flow distribution, significantly affecting the process. Furthermore, as shown in Figure 1, when gas is drawn into a low-pressure device from its side edge, conventional techniques typically include an intake plate at the side edge of the low-pressure device, with holes 1 of consistent diameter spaced evenly on the intake plate, and multiple relief slots 2, 3, and 4 on the edge of the low-pressure device. If the intake holes are spaced evenly, the airflow distribution at the center and edge of the wafer will be different, resulting in process uniformity that cannot be met. Therefore, the problem of uniformity in low-pressure processes can be solved by providing a grid intake distribution plate that allows for uneven gas intake according to the cavity of the annealing device.

[0011] Gas Distribution Element

[0012] The present invention provides a gas distribution element that can include at least two regions with different hole distribution densities. The gas distribution element may further include a first region defined by extending radially outward from a geometric center by a first distance, and a second region defined by extending radially from an outermost edge toward the geometric center by a second distance. The first and second regions each have holes with different hole distribution densities.

[0013] According to one embodiment, the gas distribution element may be located inside one side of the heat treatment device, i.e., the heat treatment device has an intake system including side intake or side intake and top intake. The gas distribution element may be made of any suitable material suitable for use in the reaction chamber of a semiconductor heat treatment device, but is preferably a transparent quartz plate with a predetermined pore distribution.

[0014] 2 is a cross-sectional schematic diagram of a gas distribution element according to one embodiment of the present disclosure, which includes multiple regions R1, R2, and R3 with holes 5 of different density distribution, a relief region 6 for avoiding other intake piping, and relief slots 2, 3, and 4 for avoiding the air floating block, acceleration block, and deceleration block, respectively.

[0015] The gas distribution element comprises a central region, i.e. a first region R1, defined by extending radially outward from the geometric center of the gas distribution element by a first distance, for example, in the first region, the first distance may be 1 to 50 mm, preferably 3 to 45 mm, more preferably 5 to 40 mm, such as 8 mm, 10 mm, 15 mm, 20 mm, 25 mm, 30 mm, 35 mm, and 40 mm, and the holes within the region may have the same diameter, for example, in the range of 1 to 10 mm, preferably 2 to 8 mm, such as 3 mm, 4 mm, 5 mm, 6 mm, and 7 mm.

[0016] According to one embodiment, the distribution density of the holes in the first region may be such that the distance between the centers of adjacent holes is 1.4 to 2 cm, for example, 1.5 cm, 1.6 cm, 1.7 cm, 1.8 cm, and 1.9 cm.

[0017] According to one embodiment, the gas distribution element may further comprise an outermost region, i.e. a second region R2, defined by a second distance extending radially from the gas distribution element towards the geometric centre, for example, in the second region, the second distance may be 30-50 mm, preferably 32-45 mm, more preferably 35-43 mm, such as 37 mm, 38 mm, 39 mm, 40 mm, 41 mm and 42 mm, and the holes within the region may have the same diameter, for example in the range of 1-10 mm, preferably 2-8 mm, such as 3 mm, 4 mm, 5 mm, 6 mm and 7 mm.

[0018] According to one embodiment, the distribution density of the holes in the second region is higher than the distribution density of the holes in the first region, for example, the distance between the centers of adjacent holes may be 1 cm.

[0019] According to one embodiment, the gas distribution element may further include a third region R3, which is an intermediate region located between the first region and the second region, and the holes in this region may have the same diameter, for example, in the range of 1 to 10 mm, preferably 2 to 8 mm, such as 3 mm, 4 mm, 5 mm, 6 mm, and 7 mm.

[0020] According to one embodiment, the distribution density of the holes in the third region may be higher than the distribution density of the holes in the first region and lower than the distribution density of the holes in the second region, for example, the distance between the centers of adjacent holes may be about 0.5 cm.

[0021] To ensure uniform gas flow within the reaction chamber, the hole density in different regions of the gas distribution element needs to be set at a predetermined ratio. Specifically, the hole density ratio between the first region and the third region may be 1:(2-8), for example, 1:3, 1:4, 1:5, 1:6, or 1:7. Furthermore, the hole density ratio between the first region and the second region may be 1:(2-4), for example, 1:3. The hole density in the third region is higher than that in the second region.

[0022] In the case of the low-pressure heat treatment device of the present invention, in order to maintain a low-pressure environment, the amount of gas introduced into the reaction chamber of the heat treatment device is small, and the airflow distribution in the central region of the chamber tends to be stronger than that in the edge region, resulting in a faster growth rate of oxidation products in the central region of the surface of the semiconductor workpiece (e.g., silicon wafer) and a slower growth rate in the edge region, resulting in a thicker oxide layer in the central region than in the edge region. Therefore, in the gas distribution element of the present invention, by providing holes with different distribution densities, especially holes with a lower density in the center and a higher density at the edge, at the side edges of the reaction chamber, a uniform airflow is supplied into the reaction chamber, and a highly uniform and less defective oxide layer is formed on the surface of the semiconductor workpiece during the heat treatment process, and the oxidation treatment time is shortened.

[0023] 3 is a cross-sectional schematic diagram of a gas distribution element according to another embodiment of the present disclosure, which includes multiple regions R1, R2, R3, and R4 with different hole densities 5, a relief region 6 for avoiding other intake piping, and relief slots 2, 3, and 4 for avoiding the air floating block, acceleration block, and deceleration block, respectively.

[0024] The gas distribution element comprises a central region, i.e. a first region R1, defined by extending radially outward from the geometric center of the gas distribution element by a first distance, for example, in the first region, the first distance may be 1 to 50 mm, preferably 3 to 45 mm, more preferably 5 to 40 mm, such as 8 mm, 10 mm, 15 mm, 20 mm, 25 mm, 30 mm, 35 mm, and 40 mm, and the holes within the region may have the same diameter, for example, in the range of 1 to 10 mm, preferably 2 to 8 mm, such as 3 mm, 4 mm, 5 mm, 6 mm, and 7 mm.

[0025] According to one embodiment, the distribution density of the holes in the first region may be such that the distance between the centers of adjacent holes is 1.4 to 2 cm, for example, 1.5 cm, 1.6 cm, 1.7 cm, 1.8 cm, and 1.9 cm.

[0026] According to one embodiment, the gas distribution element further comprises an outermost region, i.e. a second region R2 defined by a second distance extending radially from the gas distribution element towards the geometric centre, for example, in the second region, the second distance may be 30-50 mm, preferably 32-45 mm, more preferably 35-43 mm, such as 37 mm, 38 mm, 39 mm, 40 mm, 41 mm and 42 mm, and the holes within the region may have the same diameter, for example in the range of 1-10 mm, preferably 2-8 mm, such as 3 mm, 4 mm, 5 mm, 6 mm and 7 mm.

[0027] According to one embodiment, the distribution density of the holes in the second region is higher than the distribution density of the holes in the first region, for example, the distance between the centers of adjacent holes may be 1 cm.

[0028] According to one embodiment, the above gas distribution element may further include at least two intermediate regions, a third region R3 and a fourth region R4, located between the first region and the second region, and the holes in the same region may have the same hole diameter, for example, in the range of 1 to 10 mm, preferably 2 to 8 mm, for example, 3 mm, 4 mm, 5 mm, 6 mm, and 7 mm.

[0029] According to one embodiment, the distribution density of the holes in the third region may be higher than the distribution density of the holes in the first region and lower than the distribution density of the holes in the second region, for example, the distance between the centers of adjacent holes may be about 0.5 cm.

[0030] According to one embodiment, the distribution density of the holes in the fourth region may be higher than the distribution density of the holes in the first region, lower than the distribution density of the holes in the second region, and lower than the distribution density of the holes in the third region, for example, the distance between the centers of adjacent holes may be about 1 cm.

[0031] To ensure uniform gas flow within the reaction chamber, the hole density in different regions of the gas distribution element must be set to a predetermined ratio. Specifically, the ratio of the hole density between the first region and the third region may be 1:(2-8), for example, 1:3, 1:4, 1:5, 1:6, or 1:7. The ratio of the hole density between the first region and the second region may be 1:(2-4), for example, 1:3. The ratio of the hole density between the first region and the fourth region may be 1:(2-4), for example, 1:3. The hole density in the third region is higher than that in the second region, and the hole density in the fourth region is lower than that in the third region. The hole density in the second region and the hole density in the fourth region may be the same or different.

[0032] 4, the gas distribution element according to the third embodiment of the present disclosure includes multiple regions R1, R2, R3 with holes 5 of different diameters, a relief region 6 for avoiding other intake piping, and relief slots 2, 3, 4 for avoiding the air floating block, acceleration block, and deceleration block, respectively. According to one specific embodiment, the intervals of these regions are different.

[0033] The gas distribution element comprises a central region, i.e. a first region R1, defined by extending radially outward from the geometric center of the gas distribution element by a first distance, for example, in the first region, the first distance may be 1 to 50 mm, preferably 3 to 45 mm, more preferably 5 to 40 mm, such as 8 mm, 10 mm, 15 mm, 20 mm, 25 mm, 30 mm, 35 mm, and 40 mm, and the holes within the region may have the same diameter, for example, in the range of 1 to 10 mm, preferably 2 to 8 mm, such as 3 mm, 4 mm, 5 mm, 6 mm, and 7 mm.

[0034] According to one embodiment, the distribution density of the holes in the first region may be such that the distance d1 between the centers of adjacent holes is 1.4 to 2 cm, for example, 1.5 cm, 1.6 cm, 1.7 cm, 1.8 cm, and 1.9 cm.

[0035] According to one embodiment, the gas distribution element further comprises an outermost region, i.e. a second region R2 defined by a second distance extending radially from the outermost edge of the gas distribution element towards its geometric center, for example, in the second region, the second distance may be 30-50 mm, preferably 32-45 mm, more preferably 35-43 mm, such as 37 mm, 38 mm, 39 mm, 40 mm, 41 mm, and 42 mm, and the holes within the region may have the same diameter, for example in the range of 1-10 mm, preferably 2-8 mm, such as 3 mm, 4 mm, 5 mm, 6 mm, and 7 mm.

[0036] According to one embodiment, the inner diameter of the holes in the second region is larger than the inner diameter of the holes in the first region, for example, the distance d2 between the centers of adjacent holes may be 1 cm, and preferably, the inner diameter of the holes in the second region may be 1 to 7 mm.

[0037] According to one embodiment, the gas distribution element may further include a third region R3, which is an intermediate region located between the first region and the second region, and the holes in this region may have the same diameter, for example, in the range of 1 to 10 mm, preferably 2 to 8 mm, such as 3 mm, 4 mm, 5 mm, 6 mm, and 7 mm.

[0038] According to one embodiment, the inner diameter of the holes in the third region may be larger than the inner diameter of the holes in the first region and larger than the inner diameter of the holes in the second region, for example, the distance d3 between the centers of adjacent holes may be about 0.5 cm, and preferably, the inner diameter of the holes in the second region may be 1 to 2 mm.

[0039] To ensure uniform gas flow within the reaction chamber, the change in the diameter of the holes in each region of the gas distribution element must be set at a predetermined ratio. Specifically, the ratio of the diameter of the holes in the first region to the diameter of the holes in the third region may be 1:(2-8), for example, 1:3, 1:4, 1:5, 1:6, or 1:7. Furthermore, the ratio of the diameter of the holes in the first region to the diameter of the holes in the second region may be 1:(2-4), for example, 1:3.

[0040] Furthermore, the gas distribution element according to the fourth embodiment of the present invention may further include a fourth region R4 located between the third region and the first region based on the gas distribution element of the third embodiment described above, and the holes within this region may have the same hole diameter, for example, in the range of 1 to 10 mm, preferably 2 to 8 mm, for example, 3 mm, 4 mm, 5 mm, 6 mm, and 7 mm.

[0041] Specifically, the ratio of the inner diameters of the holes in the first region to the third region may be 1:(2-8), for example, 1:3, 1:4, 1:5, 1:6, or 1:7. Furthermore, the ratio of the inner diameters of the holes in the first region to the second region may be 1:(2-4), for example, 1:3. The ratio of the inner diameters of the holes in the first region to the fourth region may be 1:(2-4), for example, 1:3. Furthermore, the inner diameters of the holes in the third region may be larger than those of the holes in the second region, and smaller than those of the holes in the third region. The inner diameters of the holes in the second region may be the same as or different from those of the holes in the fourth region. In the fourth region, the distance d4 between the centers of adjacent holes may be 0.5 cm.

[0042] In the third embodiment, according to one specific example, when the inner diameter of the hole changes, the distance between the centers of the holes can be kept constant, and the gap between adjacent holes changes with the change in the inner diameter of the hole. Specifically, considering the gap between holes, the gap between adjacent holes is preferably 3 mm or more, that is, the minimum width of the quartz material between adjacent holes is 3 mm or more.

[0043] According to another specific embodiment, when the inner diameter of the holes changes, the gap between adjacent holes is kept constant, i.e., the distance between the centers of the circles between adjacent holes changes, but the distance between the centers of the circles satisfies the above requirement.

[0044] According to the above-described embodiments, the gas distribution element of the present invention can achieve an effect similar to adjusting the hole density by adjusting the inner diameter size of the holes in different regions, so that the gas entering the reaction chamber can form a uniform gas flow, and the surface of the semiconductor workpiece (e.g., wafer) exposed to the gas flow can be uniformly oxidized, forming an oxide film with a consistent thickness, reducing defects in the film, accelerating the oxidation process, and improving production efficiency.

[0045] Heat Treatment Equipment

[0046] According to one embodiment of the present invention, there is provided a thermal processing apparatus for thermally processing, for example, oxidizing, semiconductor workpieces, the thermal processing apparatus including the gas distribution element described above. According to one embodiment, the gas distribution element is provided on the inside of a sidewall of an intake end of the thermal processing apparatus, and an exhaust port is provided at the other end opposite the end where the gas distribution element is provided.

[0047] According to another embodiment, in addition to the gas distribution element at one end, an air inlet may also be provided at the top of the heat treatment device.

[0048] When a heat treatment apparatus having the above intake configuration is used for a low-pressure heat treatment process of semiconductor workpieces, the process temperature may be 600 to 1200°C, and the process gas pressure in the reaction chamber of the heat treatment apparatus may be a low pressure of 1 to 20 Torr.

[0049] According to one specific embodiment, the process gas may include hydrogen gas and oxygen gas, where, based on the total flow rate of the process gas, the flow rate ratio of hydrogen gas may be less than 30% but not 0%, and the flow rate ratio of oxygen gas may be greater than 70% but not 100%.

[0050] The thermal processing apparatus according to the present invention can be used as a low-pressure processing apparatus for rapid thermal processing, and can also be used as a remote plasma processing apparatus.

[0051] It should be understood that various forms of the above process can be used by rearranging, adding, or deleting steps, for example, but without limitation, the steps described in the present disclosure can be performed in parallel, sequentially, or in a different order, as long as the desired results of the technical solutions disclosed in the present disclosure can be achieved.

[0052] The above specific embodiments do not limit the scope of protection of the present disclosure. Those skilled in the art will appreciate that various modifications, combinations, subcombinations, and substitutions are possible depending on design requirements and other factors. Any modifications, equivalent substitutions, improvements, etc. made within the scope of the present disclosure are all intended to be included in the scope of protection of the present disclosure.

Claims

1. A gas distribution element provided on the inside of a side wall of an intake end of a low-pressure heat treatment apparatus in which the pressure of a process gas in a reaction chamber is a low pressure of 1 to 20 Torr (133.3 to 2666 Pa), comprising: The gas distribution element comprises: a first region defined by extending radially outward from a geometric center a first distance; and a second region defined by extending radially from an outermost edge toward the geometric center a second distance. and at least one third region located between the first region and the second region, wherein the distance between the centers of adjacent holes in the second region is smaller than the distance between the centers of adjacent holes in the first region, and the distance between the centers of adjacent holes in the third region is different from the distance between the centers of adjacent holes in the first region and the distance between the centers of adjacent holes in the second region. Gas distribution element.

2. the ratio of the hole distribution density of the first region to the hole distribution density of the second region is 1:(2 to 4); 2. The gas distribution element of claim 1.

3. the ratio of the hole distribution density of the first region to the hole distribution density of the third region is 1:(2 to 8); 2. The gas distribution element of claim 1.

4. 2. The gas distribution element according to claim 1, wherein the inner diameter of the holes is 1 to 10 mm.

5. The gas distribution element of claim 1 , wherein the inner diameters of the holes in different regions are different from each other.

6. A heat treatment apparatus, A heat treatment device comprising a gas distribution element according to any one of claims 1 to 5.

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