Joint, manufacturing method thereof, and electrode-embedded member

Abstract

To provide a joined body capable of joining an insulation layer comprising a ceramic sintered body of AlN as a main constituent on an intended surface of a metal member which becomes a base of a substrate-holding member and the like, capable of heightening electrical insulation properties, and capable of suppressing erosion and contamination of a joined face of the metal member and the insulation layer, a production method of the same, and an electrode-embedded member.SOLUTION: A joined body 100 includes a metal member 10 comprising a high melting point metal having a melting point of 2,000°C or higher, and an insulation layer 30 comprising a ceramic sintered body of AlN as a main constituent, where a maximum thickness of the metal member 10 in a direction vertical to one principal plane 12 is 1 mm or more, and the insulation layer 30 is directly joined to at least a part of the metal member 10 excluding two planes of the one principal plane 12, and the other principal plane 14 at a side facing the one principal plane 12.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a bonded body, a method for producing the same, and an electrode-embedding member. [Background technology]

[0002] AlN components used in semiconductor manufacturing equipment are sometimes joined to metal components to add various functions.

[0003] Patent Document 1 discloses a bonded assembly in which an aluminum nitride member and a metal member are bonded with an aluminum brazing material, and a semiconductor holder. A preferred embodiment is disclosed in which the aluminum nitride member is a semiconductor holder having a mounting surface for mounting a semiconductor wafer, and the metal member is a heat transfer member for transferring heat between the semiconductor holder and the outside. The document also discloses examples of heat transfer members made of tungsten, molybdenum, copper, or alloys thereof. These metal members function as heat sinks and have a certain thickness.

[0004] Furthermore, Patent Document 2 discloses an aluminum nitride joined body having a relatively thick and highly conductive sintered metal layer incorporated therein, which minimizes warpage and has a high bonding strength between the sintered metal layer and the substrate, and is suitable for use as an electrode-embedded member, and a method for manufacturing the same. The aluminum nitride joined body has an aluminum nitride sintered body having a sintered metal layer made of tungsten or molybdenum and having a thickness of 15 to 100 μm formed on at least a portion of the bonding surface, and the sheet resistance of the sintered metal layer is 1 Ω / □ or less and the warpage of the sintered metal layer is 100 μm / 100 mm or less, with the aim of providing such an aluminum nitride joined body and a method for manufacturing the same. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Publication No. 9-249465 [Patent Document 2] Japanese Patent Application Laid-Open No. 2005-159334 [Patent Document 3] Japanese Patent Application Publication No. 5-246769 [Patent Document 4] Japanese Patent Application Publication No. 62-78167 [Non-patent literature]

[0006] [Non-Patent Document 1] Journal of the Japan Institute of Metals, Vol. 45, No. 2 (1981), pp. 184-189 Summary of the Invention [Problem to be solved by the invention]

[0007] AlN ceramics used in semiconductor manufacturing processes are sometimes integrated with high-melting-point metals used in heat sinks, etc. To do this, the high-melting-point metal needs to be thicker than a certain amount, but such a structure cannot be achieved with a sintered metal layer such as that described in Patent Document 2.

[0008] According to Non-Patent Document 1, it has been said that it is difficult to produce a bonded body because AlN and high-melting-point metals do not react without a bonding material. Therefore, conventionally, a bonded body of AlN ceramic and high-melting-point metal has been produced by joining them with a brazing material or the like at the bonding interface (Patent Documents 1, 3, and 4).

[0009] However, when these bonded bodies are used in semiconductor manufacturing processes, there are concerns about erosion of the brazing material that forms the bonding layer and contamination from the bonding layer in the methods of Patent Documents 1, 3, and 4. Therefore, there has been a demand for an AlN-high melting point metal bonded body that is a bonded body of AlN ceramic and a thick high melting point metal and that reduces the risk of contamination and erosion from the bonding material.

[0010] Furthermore, these joints often need to be electrically insulated from the heater electrodes embedded in the AlN and from surrounding components. Conventionally, this has been achieved by forming an insulating thermally sprayed film of alumina or the like on the exposed surface of the refractory metal, or by preparing and adhering a sleeve made of alumina or the like in the hole that penetrates the refractory metal.

[0011] However, when coating an exposed surface with a thermal spray film, there are many restrictions on the shape of the exposed surface, and generally, a uniform film can only be obtained on a flat surface. Furthermore, the thermal spray film itself usually has a porosity of around 5%, which is sometimes insufficient from the perspective of electrical insulation.

[0012] Furthermore, when bonding the sleeve, the temperature at which the bonded assembly can be used is limited by the adhesive used; commonly used organic adhesives can only withstand temperatures of around 200°C, making them unsuitable for high-temperature applications above 200°C.

[0013] The present invention has been made in consideration of the above circumstances, and aims to provide a bonded body, a manufacturing method thereof, and an electrode-embedded member, which can bond an insulating layer made of a ceramic sintered body mainly composed of AlN to a desired surface of a metal member that serves as a base, such as a substrate holding member, thereby improving electrical insulation and suppressing erosion and contamination of the bonding surfaces of the metal member and the insulating layer. [Means for solving the problem]

[0014] (1) In order to achieve the above object, the bonded body of the present invention is a bonded body of a metal member made of a high-melting-point metal having a melting point of 2000°C or more and an insulating layer made of a ceramic sintered body mainly composed of AlN, wherein the maximum thickness in a direction perpendicular to one main surface of the metal member is 1 mm or more, and the insulating layer is directly bonded to at least a part of the metal member excluding two surfaces, namely, the one main surface and the other main surface opposite to the one main surface. and the oxygen concentration at the bonding interface between the insulating layer and the metal member is higher than the oxygen concentration inside the insulating layer. It is characterized by the following.

[0015] This allows an insulating layer made of a ceramic sintered body primarily composed of AlN to be bonded to the desired surface of a metal member that serves as a base, such as a substrate holder, resulting in a bonded body with improved electrical insulation. It also prevents erosion and contamination at the bonding surface between the metal member and the insulating layer. Furthermore, the thick metal member can be used as a heat sink, making it suitable for a variety of applications.

[0016] (2) In the joined body of the present invention, the metal members have a carbide layer containing a carbide of the high-melting point metal near the joining interface between the insulating layer and the metal members, and the average thickness of the carbide layer is 40 μm or less.

[0017] In this way, by reducing the average thickness of the carbide layer of high-melting point metal near the bonding interface between the insulating layer and the metal member, the bonding strength between the insulating layer and the metal member can be increased, and the reliability of the electrical insulation of the metal member can be improved.

[0018] (3) Furthermore, in the bonded body of the present invention, the metal member has a through hole penetrating in the thickness direction or a groove portion on one main surface, the other main surface, or a side surface, and the insulating layer is bonded to the inner surface of the through hole or the surface including the groove portion.

[0019] In this way, by having a through hole penetrating the metal member in the thickness direction, or a groove on one main surface, the other main surface, or a side surface, and bonding an insulating layer to the inner surface of the through hole or the surface including the groove, it is possible to form an insulating layer on the inner surface of the through hole or the surface including the groove, which would previously have been difficult to bond directly, further expanding the uses of the bonded body.

[0020] (4) In the joined body of the present invention, the metal member contains 1 wt % or less of a second metal oxide, which is an oxide of a metal different from the high-melting-point metal.

[0021] In this way, by the metal member containing 1 wt% or less of a second metal oxide, which is an oxide of a metal different from the high-melting point metal, the bonding strength between the insulating layer and the metal member is increased, and the reliability of the electrical insulation of the metal member is improved.

[0022] (5) The bonded body of the present invention is characterized in that a first ceramic member made of a ceramic sintered body containing AlN as a main component is bonded to the one main surface of the metal member.

[0023] In this way, by joining a ceramic member to one main surface of a metal member, a joined body can be formed using the metal member as a base, and the joined body can be used as a substrate holding member, etc. Furthermore, since the thickness of the metal member is large, the metal member can be used as a heat sink, and can be used for various other purposes.

[0024] (6) The joined body of the present invention is characterized in that a second ceramic member made of a ceramic sintered body containing AlN as a main component is further joined to the other main surface of the metal member.

[0025] In this way, by joining ceramic members to both main surfaces of the metal member, the reliability of the electrical insulation of the exposed surface of the metal member is increased, and the internal stress of the joined body is balanced, improving the reliability of the joined body and further expanding the applications of the joined body.

[0026] (7) The electrode-embedding member of the present invention is characterized by comprising the joined body according to (5) above and an electrode embedded in the first ceramic member of the joined body.

[0027] In this way, by forming an electrode-embedded member in which an electrode is embedded in the first ceramic member of the bonded body, the electrode-embedded member can be used as a heater module having a heater function.

[0028] (8) The present invention also provides a method for producing a bonded body including a metal member made of a high-melting-point metal having a melting point of 2000°C or higher and an insulating layer made of a ceramic sintered body mainly composed of AlN, the method comprising the steps of: preparing a granulated powder by granulating AlN raw material powder or a powder obtained by adding a metal oxide raw material powder to the AlN raw material powder; adding more than 0 wt% to 1 wt% or less of a second metal oxide to the high melting point metal; The granulated powder or a compact formed from the granulated powder, and A second metal oxide was added The method is characterized by including a filling and stacking step of placing a plate-shaped metal member precursor made of a high-melting point metal and having a thickness of 1 mm or more in a carbon mold so that one main surface of the metal member precursor is perpendicular to the stacking direction, and stacking the metal member precursor so that the granulated powder or the compact fills the gap between the side surface of the metal member precursor and the carbon mold; a stack formation step of inserting a carbon punch into the carbon mold to form a stack; a firing step of uniaxially pressurizing and firing the stack; and a removal processing step of removing the ceramic sintered body formed on the metal member precursor after the uniaxially pressurizing and firing, leaving a predetermined thickness.

[0029] This allows for a bonded body with highly reliable electrical insulation on the side surfaces of the metal members.The large thickness of the metal members allows for a variety of applications, such as when the bonded body is used as a substrate holder, using the metal members as a heat sink, or as a base to increase the strength and dimensional accuracy of ceramics.

[0030] (9) Furthermore, in the method for manufacturing a joined body of the present invention, the metal member precursor has a through hole penetrating in the thickness direction or a groove portion on one main surface, the other main surface, or a side surface, and the removal processing step includes a step of removing the ceramic sintered body formed in the through hole or the groove portion while leaving a predetermined thickness.

[0031] This allows an insulating layer to be formed on the inner surface of the through-hole or on the surface including the groove, which has been difficult to bond directly, further expanding the range of uses for the bonded body. [Effects of the Invention]

[0032] According to the present invention, an insulating layer made of a ceramic sintered body mainly composed of AlN can be bonded to a desired surface of a metal member serving as a base such as a substrate holder, thereby providing a bonded body with improved electrical insulation. In addition, corrosion and contamination of the bonding surfaces of the metal member and the insulating layer can be suppressed. [Brief explanation of the drawings]

[0033] [Figure 1] 1 is a schematic cross-sectional view showing an example of a bonded body according to a first embodiment of the present invention. [Figure 2] FIG. 4 is a schematic cross-sectional view showing a modified example of the bonded body according to the first embodiment of the present invention. [Figure 3] FIG. 6 is a schematic cross-sectional view showing an example of a bonded body according to a second embodiment of the present invention. [Figure 4] FIG. 10 is a schematic cross-sectional view showing a modified example of the bonded body according to the second embodiment of the present invention. [Figure 5] FIG. 6 is a schematic cross-sectional view showing an example of an electrode-embedded member according to a second embodiment of the present invention. [Figure 6] 1(a) to 1(e) are cross-sectional views each showing a schematic diagram of a step in the manufacturing process of a manufacturing method according to an embodiment of the present invention. [Figure 7] 1(a) to 1(e) are cross-sectional views each showing a schematic diagram of a step in the manufacturing process of a manufacturing method according to an embodiment of the present invention. [Figure 8] 1 is a schematic diagram of a cross section of a side surface of Example 1 taken perpendicularly. DETAILED DESCRIPTION OF THE INVENTION

[0034] Next, an embodiment of the present invention will be described with reference to the drawings. To facilitate understanding of the description, the same reference numerals are used to designate the same components in the drawings, and duplicated descriptions will be omitted. Note that in the configuration diagrams, the size of each component is shown conceptually and does not necessarily represent the actual dimensional ratio.

[0035] [First embodiment] [Construction of the zygote] A bonded body according to a first embodiment of the present invention will be described. FIG. 1 is a schematic cross-sectional view showing an example of the bonded body according to the first embodiment of the present invention. The bonded body 10 according to the first embodiment of the present invention is formed by bonding a metal member 10 made of a high-melting-point metal having a melting point of 2000°C or higher to an insulating layer 30 made of a ceramic sintered body mainly composed of AlN. The metal member 10 made of a high-melting-point metal can be molybdenum (Mo), tungsten (W), tantalum (Ta), or the like, which has a melting point of 2000°C or higher and a purity of 99 wt% or higher. This suppresses deformation of the metal member 10 even at temperatures during uniaxial pressure sintering. At the same time, a high-melting-point metal oxide having a relatively high melting point of 900°C or higher is formed at the interface between the metal member 10 and the insulating layer 30, thereby suppressing deformation at the bonding interface between the metal member 10 and the insulating layer 30. The insulating layer 30 mainly composed of AlN means that it contains 90 wt% or more of AlN.

[0036] In the bonded body 100, an insulating layer 30 is directly bonded to at least a portion of the metal member 10, excluding two surfaces: one main surface 12 and the other main surface 14 opposite the one main surface 12. "Directly bonded" means bonding without the use of other materials such as brazing or adhesive. This allows the insulating layer 30, made of a ceramic sintered body mainly composed of AlN, to be directly bonded to the desired surface of the metal member 10, which serves as a base for a substrate holder or the like, thereby suppressing erosion and contamination of the bonding surface and providing the bonded body 100 with improved electrical insulation. The thickness of the insulating layer 30 is preferably 1 mm or more. The thickness of the insulating layer does not need to be uniform.

[0037] The metal member 10 has a maximum thickness of 1 mm or more in a direction perpendicular to one of its main surfaces 12. This thick thickness of the metal member 10 allows it to be used in a variety of applications, such as as a base for a substrate holder, a heat sink, or a heat spreader. The one of its main surfaces 12 refers to one of the surfaces perpendicular to the thickness direction of the metal member 10, or the surface with the largest area. A thick metal member 10 means that the maximum thickness in a direction perpendicular to one of its main surfaces 12 is 1 mm or more. A maximum thickness of 1 mm or more is preferable because a thickness of less than 1 mm can cause deformation of the metal member 10 or limit its applications. Furthermore, the average thickness in a direction perpendicular to one of its main surfaces 12 is preferably 1 mm or more.

[0038] The maximum thickness of the metal member 10 in the direction perpendicular to one main surface 12 is preferably set to a thickness appropriate for the intended use. Considering that there has not been a joined body 100 with a thick metal member 10 like the present invention, depending on the intended use, the maximum thickness is preferably 2 mm or more, more preferably 3 mm or more, and even more preferably 4 mm or more. In addition, the side surface 16 of the metal member 10 may be uneven, curved, or tapered.

[0039] The metal member 10 may have a carbide layer containing a carbide of a high-melting-point metal near the bonding interface between the metal member 10 and the insulating layer 30. When the metal member 10 has a carbide layer, the average thickness of the carbide layer is 40 μm or less. Because the carbide layer containing a carbide of a high-melting-point metal is an embrittlement layer, reducing the average thickness of the carbide layer near the bonding interface between the metal member 10 and the insulating layer 30 can increase the bonding strength between the metal member 10 and the insulating layer 30, resulting in a bonded body 100 that suppresses erosion and contamination of the bonding surface. The average thickness of the carbide layer of the metal member 10 is preferably 5 μm or less. In this way, reducing the average thickness of the carbide layer containing a carbide of a high-melting-point metal increases the bonding strength between the metal member 10 and the insulating layer 30, thereby increasing the reliability of the bonded body. The vicinity of the bonding interface will be described later.

[0040] The carbide layer containing refractory metal carbides is affected by the components of AlN that form insulating layer 30, and is also affected by the presence or absence of metal oxides in AlN and the amount of metal oxides added. Therefore, the C component in the refractory metal carbide layer is presumed to be residual carbon in the granulated powder due to the addition of metal oxides or contamination from the environment.

[0041] FIG. 2 is a schematic cross-sectional view showing a modified example of the bonded structure according to the first embodiment of the present invention. As shown in FIG. 2, the metal member 10 preferably has a through hole 20 penetrating in the thickness direction, or a groove 22 in one main surface 12, the other main surface 14, or the side surface 16. In this case, the insulating layer 30 is preferably bonded to the inner surface of the through hole 20 or the surface including the groove 22. In this way, the metal member 10 has the through hole 20 penetrating in the thickness direction, or the groove 22 in one main surface 12, the other main surface 14, or the side surface 16, and the insulating layer 30 is bonded to the inner surface of the through hole 20 or the surface including the groove 22. This makes it possible to form the insulating layer 30 on the inner surface of the through hole 20 or the surface including the groove 22, which has previously been difficult to directly bond, thereby further expanding the applications of the bonded structure 10.

[0042] The groove portion 22 may be a step. When the groove portion 22 is provided on one main surface 12 or the other main surface 14, the interior of the groove portion 22 may be a portion excluding the two surfaces, that is, the one main surface 12 and the other main surface 14, of the metal member 10.

[0043] The insulating layer 30 may contain a second phase made of a metal oxide. When the insulating layer 30 contains a second phase made of a metal oxide, the metal constituting the metal oxide of the second phase is preferably at least one selected from Y and Ca, and more preferably Y. The metal oxide constituting the second phase may be a sintering aid for a ceramic sintered body mainly composed of AlN. In this case, the metal oxide constituting the second phase may be added in an amount necessary as a sintering aid for the ceramic sintered body. For example, when Y is added as a sintering aid, it may be added in an amount of 0.1 wt% to 5 wt% in terms of Y2O3. Alternatively, the insulating layer 30 may be composed only of AlN.

[0044] The metal member 10 preferably contains 1 wt % or less of a second metal oxide, which is an oxide of a metal different from the high-melting-point metal. When the metal member 10 contains 1 wt % or less of the second metal oxide, the bonding strength between the metal member 10 and the insulating layer 30 is increased, and the reliability of the bonded body 100 is improved. The metal constituting the second metal oxide is preferably one or more selected from Y, Ce, and Ca, and more preferably Y or Ce. When the insulating layer 30 contains a second phase made of a metal oxide, the metal constituting the second metal oxide may be the same as the metal constituting the metal oxide of the second phase of the insulating layer 30. These metal oxide components already contained in the metal member 10 can increase the metal and oxygen concentrations at the bonding interface, thereby increasing the bonding strength.

[0045] The oxygen concentration at the bonding interface between the metal member 10 and the insulating layer 30 is preferably higher than the oxygen concentration inside the insulating layer 30. Furthermore, when the insulating layer 30 contains a second phase made of a metal oxide, the concentration of the metal constituting the second phase of the insulating layer 30 and the oxygen concentration at the bonding interface between the metal member 10 and the insulating layer 30 are preferably higher than the concentration of the metal and the oxygen concentration inside the insulating layer 30, respectively. In this way, the oxygen concentration at the bonding interface between the metal member 10 made of a high-melting-point metal and the insulating layer 30 made of a ceramic sintered body mainly composed of AlN is higher than the oxygen concentration inside the insulating layer 30, or the concentration of the metal constituting the second phase and the oxygen concentration are higher than the concentration of the metal and the oxygen concentration inside the insulating layer 30, respectively, so that the metal member 10 and the insulating layer 30 are bonded together via these, and a bonded body is obtained in which erosion and contamination of the bonding surfaces are suppressed.

[0046] The reason for the increase in oxygen concentration near the bonding interface is thought to be that the natural oxide film formed on the surface of the refractory metal reacts with the refractory metal, producing refractory metal oxides with melting points of 900°C or higher during firing, some of which become molten and diffuse into the sintered ceramic body.

[0047] The bonding interface between the metal member 10 and the insulating layer 30 refers to the interface where the concentration of the metal element that primarily constitutes the metal member 20 drops sharply in cross-sectional elemental mapping using EDX or EPMA. The interior of the insulating layer 30 refers to a region 1 mm or more away from the bonding interface, perpendicular to the line approximating the bonding interface, in the direction of the insulating layer 30 (ceramic sintered body). When the insulating layer 30 is thinner than 1 mm, the interior of the insulating layer 30 refers to a region 500 μm inward from the surface of the insulating layer 30 that is the farthest from the bonding interface, or a region within the intermediate region of the insulating layer 30 that is further away from the bonding interface. When the insulating layer 30 contains a second phase made of a metal oxide, the interior of the insulating layer 30 may be referred to as a region where the concentration of the metal that constitutes the second phase of the insulating layer 30 is uniform. The vicinity of the bonding interface refers to a region within 100 μm perpendicular to the line approximating the bonding interface. The carbide layer of the high-melting-point metal is entirely contained near the bonding interface.

[0048] Changes in the concentrations of metal, carbon, and oxygen present in the metal member 10, the insulating layer 30, or their bonding interface can be determined by comparing the intensity (count number) of characteristic X-rays in the relevant area using an EPMA. This allows the relative differences in the concentrations of metal, carbon, and oxygen near and inside the interface to be evaluated.

[0049] The presence of the refractory metal carbide layer can be confirmed by cross-sectional elemental mapping using EDX or EPMA, and its thickness can be measured by cross-sectional SEM or optical microscope observation. The average thickness of the refractory metal carbide layer can be measured, for example, by drawing ten lines at 10 μm intervals perpendicular to a line approximating the bond interface on a 1000x SEM image and averaging the lengths of the line segments that overlap with the confirmed carbide layer. This average value is used as the average thickness of the refractory metal carbide layer in that field of view. To obtain an overall average value, it is preferable to further average the average values ​​obtained for three or more fields of view. Here, if the carbide layer is so thin that it is difficult to confirm it in the SEM image, it is evaluated as being at least 2 μm or less, so that its dimensions can be measured.

[0050] The metal member 10 may not have a carbide layer of a high-melting point metal near the bonding interface between the metal member 10 and the insulating layer 30. "No carbide layer of a high-melting point metal near the bonding interface" means that, when the bonding interface is approximated by a straight line in elemental mapping of a cross section by EDX or EPMA, no C component is detected within an area of ​​100 μm perpendicular to the straight line.

[0051] Preferably, the insulating layer 30 further contains a Group 4 metal, and the Group 4 metal is diffused in the metal member 10. In this way, the insulating layer 30 contains a Group 4 metal and the Group 4 metal is diffused in the metal member 10, thereby increasing the bonding strength between the metal member 10 and the insulating layer 30 and improving the reliability of the bonded body 100. The Group 4 metal is preferably one or more selected from Ti and Hf, and more preferably Ti.

[0052] [Second embodiment] A bonded structure according to a second embodiment of the present invention will be described. Fig. 3 is a schematic cross-sectional view showing an example of the bonded structure according to the second embodiment of the present invention. The bonded structure 200 according to this embodiment has the same basic configuration as the bonded structure 100 according to the first embodiment, so only the differences will be described below.

[0053] In the joined body 200 according to this embodiment, a first ceramic member 40 made of a ceramic sintered body containing AlN as a main component is joined to one main surface 12 of a metal member 10. In this case, the metal member 10 preferably has a maximum diameter that is 50% or more of the maximum diameter of the first ceramic member 40. Furthermore, the first ceramic member 40 is preferably joined to the entire one main surface 12 of the metal member 10. These characteristics allow the metal member 10 to be applied in various forms according to various uses. Furthermore, the first ceramic member 40 is preferably joined directly to the one main surface 12 of the metal member 10 without any other member interposed therebetween. This is because the use of another member interposed therebetween may reduce the joining strength.

[0054] In this way, by joining the first ceramic member 40 to one main surface 12 of the metal member 10, a joined body 200 can be obtained using the metal member 10 as a base, and the joined body 200 can be used for various purposes, such as increasing the strength and dimensional accuracy of the first ceramic member 40 using the metal member 10, and can be used as a substrate holding member, etc.

[0055] FIG. 4 is a schematic cross-sectional view showing a modified example of a bonded body according to the second embodiment of the present invention. As shown in FIG. 4, the bonded body 200 preferably further includes a second ceramic member 45 made of a ceramic sintered body mainly composed of AlN bonded to the other main surface 14 of the metal member 10 opposite the one main surface 12. Bonding the ceramic members 40 and 45 to both main surfaces 12 and 14 of the metal member 10 in this manner balances the internal stress of the bonded body 200, thereby improving the reliability of the bonded body 200 and further expanding the range of uses of the bonded body 200. Furthermore, sandwiching the plate-shaped high-melting-point metal (metal member 10) between the ceramic members 40 and 45 can suppress warping of the bonded body 200, allowing the fabrication of a bonded body 200 with high dimensional accuracy.

[0056] The first ceramic member 40 and the second ceramic member 45 are both made of a ceramic sintered body containing AlN as a main component, but their composition, i.e., the type and amount of sintering aid, may be the same as or different from that of the insulating layer 30. Furthermore, the first ceramic member 40 and the second ceramic member 45 may have the same composition as or different from that of the insulating layer 30. The first ceramic member 40 or the second ceramic member 45 and the insulating layer 30 are preferably formed integrally. The first ceramic member 40 or the second ceramic member 45 may be joined to function as the insulating layer 30.

[0057] [Configuration of electrode embedding material] Next, an electrode-embedded member according to an embodiment of the present invention will be described. Fig. 5 is a schematic cross-sectional view showing an example of an electrode-embedded member according to a second embodiment of the present invention. An electrode-embedded member 250 according to the second embodiment of the present invention includes a bonded body 200 and an electrode 50 embedded in a first ceramic member 40 of the bonded body 200.

[0058] The joined body 200 is the joined body 200 described above. The electrode 50 is embedded in the first ceramic member 40 of the joined body 200. The electrode 50 may have various shapes, such as a mesh shape or a foil shape. The electrode 50 may be made of various materials, such as molybdenum or tungsten. The electrode 50 can be used as a heater electrode.

[0059] The electrode-embedded member 250 may be provided with terminal holes and terminals (not shown).

[0060] The bonded body and electrode-embedded member of the present invention can bond an insulating layer made of a ceramic sintered body primarily composed of AlN to the desired surface of a metal member that serves as a base, such as a substrate holder. By electrically insulating the exposed surface of the metal member, assembly with surrounding components is possible, resulting in a member with enhanced electrical insulation. Furthermore, because the sleeve is integrally formed with the metal member, the heat resistance temperature can be increased compared to conventional models. Furthermore, because the bonded surface of the metal member and insulating layer is prevented from erosion or contamination, the member can be used in a variety of applications. Furthermore, by placing a sealing member on the side of the metal member, the required airtightness can be ensured.

[0061] [Method of manufacturing the bonded body] Next, a method for manufacturing the bonded bodies 100, 200 configured as described above will be described. Figures 6(a) to 6(e) are cross-sectional views each showing a schematic diagram of one stage of the manufacturing process of the manufacturing method according to the embodiment of the present invention. The manufacturing method according to the embodiment of the present invention includes a preparation step, a filling and laminating step, a laminate formation step, a firing step, and a removal and processing step.

[0062] In the preparation step, granulated powder 32 is prepared by granulating AlN raw material powder or powder obtained by adding metal oxide raw material powder to AlN raw material powder. The AlN raw material powder is preferably highly pure, with a purity of preferably 96% or more, and more preferably 98% or more. The average particle size of the AlN powder is preferably 0.1 μm to 1.0 μm, and more preferably 0.3 μm to 0.8 μm. When Y2O3, for example, is used as the metal oxide raw material powder, 0.1 wt% to 5 wt% of Y2O3 is added to the AlN raw material powder, and a PVA-based binder, dispersant, and solvent are added to prepare a slurry, which is then granulated using a spray dryer or the like to produce granulated powder 32.

[0063] In the filling and stacking process, a metal member precursor 24 made of a plate-shaped high-melting point metal having a thickness of 1 mm or more is prepared, and the granulated powder 32 or a compact formed from the granulated powder 32 and the metal member precursor 24 are placed in a bottomed carbon mold 60 (molding mold) so that one main surface 12 of the metal member precursor 24 is perpendicular to the stacking direction, and the metal member precursor 24 is stacked so that the granulated powder 32 or the compact is filled in the gap between the side surface 16 of the metal member precursor 24 and the carbon mold 60.

[0064] As another example of laminating compacts, one or more compacts are produced using the obtained granulated powder 32. As a method for forming the compacts, known methods such as uniaxial pressing or cold isostatic pressing (CIP) may be used. Note that the method for forming the compacts is not limited to pressure forming, and for example, green sheet lamination or slip casting may also be applied.

[0065] When producing electrode-embedded member 250, when filling granulated powder 32, granulated powder 32 is pre-pressed, electrode 50 is placed, and granulated powder 32 is further added and pre-pressed, or compacts are stacked, electrode 50 is placed, and further compacts are stacked, whereby electrode 50 is embedded in the portion that will become first ceramic member 40 after sintering.

[0066] In the laminate formation process, a carbon punch 70 is inserted into a carbon mold 60 to form a laminate 34. The laminate 34 may be a two-layer structure consisting of a layer of granulated powder 32 or a compact that will become the ceramic sintered body 36 after sintering and a layer of a metal member precursor 24 that will become the metal member 10 after sintering. Alternatively, the laminate 34 may be a three-layer structure in which the metal member precursor 24 is sandwiched between layers of granulated powder 32 or a compact. The side surfaces in the stacking direction may have exposed portions of the metal member precursor 24 in areas where the insulating layer 30 is not formed. However, it is preferable that the areas where the insulating layer 30 is not formed are also covered with granulated powder 32 or a compact and sintered, and then ground to expose them after sintering. FIG. 6 shows a case in which the metal member precursor 24 is covered with granulated powder 32 and formed into a three-layer structure.

[0067] In the firing step, the laminate 34 is uniaxially pressurized and fired to produce the bonded bodies 100, 200. The firing conditions are, for example, a temperature of 1700°C to 2000°C, a pressure of 1 MPa or more, and a holding time of 0.1 to 10 hours. At this time, the granulated powder 32 or a compact formed from the granulated powder 32 is subjected to a hydrostatic force and is pressed against the side surface 16 of the metal member precursor 24, and the ceramic sintered body 36 is bonded and integrated with the metal member precursor 24 without the intervention of a bonding material.

[0068] At this time, the uniaxial pressure firing process is preferably controlled so that the average thickness of the carbide layer containing carbide of the high-melting point metal near the bonding interface between the insulating layer 30 and the metal member 10 in the metal member 10 is 40 μm or less. Because the carbide layer of the high-melting point metal tends to thicken more quickly as the amount of additives contained in the granulated powder 32 increases, it is preferable to shorten the firing time and lower the firing temperature. On the other hand, in order to sinter the ceramic sintered body 36, it is necessary to fire the granulated powder 32 at a predetermined temperature or higher for a predetermined time depending on the amount of additives contained in the granulated powder 32. Therefore, the firing time and firing temperature are adjusted depending on the amount of additives contained in the granulated powder 32.

[0069] In the removal process, after uniaxial pressure firing, a predetermined region of the ceramic sintered body 36 formed on the metal member 10 is removed, leaving a predetermined thickness. Alternatively, a process for processing the ceramic sintered body into a predetermined shape may be provided. Depending on the design of the joined bodies 100 and 200, part or all of the ceramic sintered body 36 formed on one main surface 12, the other main surface 14, or the side surface 16 of the metal member 10 may be removed to expose the metal member 10. The removal process may be omitted if the ceramic sintered body 36 after firing has a thickness required for the insulating layer 30, the first ceramic member 40, or the second ceramic member 45. Alternatively, a process for processing the shape of the metal member 10 may be provided. In this case, the maximum thickness of the metal member 10 in the direction perpendicular to one main surface 12 is not less than 1 mm.

[0070] In addition, in the case of using the electrode-embedding member 250, a step of exposing a part of the electrode 50 and a step of connecting a terminal to the electrode 50 may be provided.

[0071] The method for producing and laminating a compact may include a step of degreasing the compact to produce a degreased body and a step of calcining the degreased body to produce a calcined body. In this case, for example, the degreasing temperature is preferably 400°C or higher and 800°C or lower, and the degreasing time is preferably 1 hour or higher and 120 hours or lower. The degreasing atmosphere is preferably an air atmosphere or a nitrogen atmosphere, and more preferably an air atmosphere. Furthermore, for example, the calcination temperature is preferably 1200°C or higher and 1700°C or lower, and the calcination time is preferably 0.5 hours or higher and 12 hours or lower. The calcination atmosphere is preferably a nitrogen or inert gas atmosphere, but may also be a vacuum atmosphere.

[0072] 7(a) to 7(e) are cross-sectional views each showing a schematic diagram of one stage of the manufacturing process of the manufacturing method according to an embodiment of the present invention. Fig. 7 shows an example of the manufacturing method using a metal member precursor 24 having through-holes 20 penetrating in the thickness direction, or grooves 22 on one main surface 12, the other main surface 14, or the side surface 16. Only the differences from the above manufacturing method will be explained.

[0073] The metal member precursor 24 prepared in the filling and laminating step preferably has through holes 20 penetrating in the thickness direction, or grooves 22 on one main surface 12, the other main surface 14, or the side surface 16. Furthermore, in the filling and laminating step, the through holes 20 or grooves 22 formed in the metal member precursor 24 are preferably filled with granulated powder 32 or a compact formed from the granulated powder. By filling the through holes 20 or grooves 22 with the granulated powder 32 or the like and firing the material, the granulated powder 32 or the like is pressed against the inner surfaces of the through holes 20 and grooves 22 by hydrostatic force, thereby directly bonding the ceramic sintered body 36 to the inner surfaces of the through holes 20 and grooves 22. This also reduces the risk of defects occurring in the ceramic sintered body 36 after firing. In addition to the granulated powder 32 or a compact formed from the granulated powder, a calcined or fired body of these may also be filled.

[0074] The removal process preferably includes removing the ceramic sintered body 36 formed in the through hole 20 or the groove 22, leaving a predetermined thickness. This allows the insulating layer 30 to be formed on the inner surface of the through hole 20 or the surface including the groove 22, which has been difficult to directly bond, further expanding the applications of the joined bodies 100 and 200. Furthermore, by using a metal member precursor 24 having a through hole 20 penetrating in the thickness direction, or a groove 22 on one main surface 12, the other main surface 14, or the side surface 16, it is possible to process a difficult-to-process high-melting-point metal in advance, making it easier to create shapes for various structures than by processing after firing, further expanding the applications of the joined bodies 100 and 200.

[0075] The through-holes 20 are used, for example, as holes for later attaching power supply terminals for electrode extraction, holes for supplying or suctioning gas, and holes for lift pins for mounting a substrate. The grooves 22 are used, for example, as grooves for installing sealing members for peripheral members.

[0076] By using such a method, it is possible to manufacture a bonded body or a buried electrode member that can improve electrical insulation and suppress corrosion and contamination of the bonding surfaces of the metal member and the insulating layer.

[0077] [Example] (Preparation of junction) Example 1 5 wt% of Y2O3 was added to the AlN raw powder, and a binder (PVA), dispersant, and solvent were added to prepare a slurry, which was then granulated using a spray dryer. In addition, a plate-shaped Mo with a diameter of 50 mm, a thickness of 8 mm, and a groove with a width of 5 mm and a depth of 3 mm formed in the middle of the thickness direction on the side was prepared as a metal component precursor made of a high-melting point metal.

[0078] Next, the granulated powder was filled into a bottomed carbon mold and press-molded with a carbon punch to produce a molded body with a diameter of 80 mm and a thickness of 10 mm. Next, a metal member precursor was prepared and placed on the molded body.

[0079] Next, granulated powder of the same composition was filled into the gap between the carbon mold and the side surface of the metal member precursor. Next, the granulated powder was further filled into the carbon mold to embed the metal member precursor. At this time, the granulated powder was filled and molded with a carbon punch so that the thickness from the top surface of the metal member precursor was 10 mm.

[0080] Then, with the carbon punch inserted into the carbon mold, uniaxial hot press sintering was performed for 2 hours at a temperature of 1800°C, a pressure of 4 MPa, and a N2 atmosphere. This resulted in a metal member made of Mo, a high-melting-point metal, being embedded inside the AlN sintered body with a diameter of 80 mm. Next, the side of the bonded body was removed along the cross section from the side of the metal member in the central axis direction until the thickness of the insulating layer was 1 mm. In addition, the insulating layer formed in the groove on the side of the metal member was removed, leaving a thickness of 1 mm from the surface of the groove. In this way, the bonded body of Example 1 was produced.

[0081] Example 2 A joined body of Example 2 was produced using the same steps and conditions as in Example 1, except that the granulated powder used to form the compact to be laminated on one of the main surfaces was changed to AlN raw material powder to which 0.5 wt% of Y2O3 and 0.9 wt% of TiN had been added. The granulated powder used to form the compact to be laminated on the other main surface and the granulated powder filled in the gap between the carbon mold and the side surface of the metal member precursor were AlN raw material powder to which 5 wt% of Y2O3 had been added, and were the same as in Example 1.

[0082] Example 3 A joint body of Example 3 was produced using the same steps and conditions as in Example 2, except that the metal member precursor of Example 2 was replaced with a member made of an alloy in which 0.4 wt % of Y2O3 was added to Mo.

[0083] Example 4 A bonded body of Example 4 was produced using the same steps and conditions as in Example 1, except that the metal member precursor of Example 1 was replaced with a member made of W.

[0084] Example 5 A joined body of Example 5 was produced using the same steps and conditions as in Example 2, except that the granulated powder used to form the green body to be laminated on one of the main surfaces was changed to AlN raw material powder alone among the granulated powders used in Example 2. The granulated powder used to form the green body to be laminated on the other main surface and the granulated powder filled in the gaps generated between the carbon mold and the side surfaces of the metal member precursor were AlN raw material powder to which 5 wt % of Y2O3 had been added, and were the same as in Example 1.

[0085] Example 6 A bonded body of Example 6 was produced using the same steps and conditions as Example 1, except that the firing time was changed to 5 hours.

[0086] Example 7 Of the granulated powders in Example 2, the granulated powder that forms the compact to be laminated on one of the main surfaces was changed to AlN raw material powder to which 7 wt% of Y2O3 was added, and uniaxial hot press sintering was performed for 10 hours at a temperature of 1800°C, a pressure of 4 MPa, and an N2 atmosphere. Except for this, a joined body of Example 7 was produced using the same steps and conditions as in Example 2. Note that the granulated powder that forms the compact to be laminated on the other main surface and the granulated powder that filled the gaps generated between the carbon mold and the side surfaces of the metal member precursor were AlN raw material powder to which 5 wt% of Y2O3 was added, and were the same as in Example 1.

[0087] (Comparative Example 1) An Al metal member having the same shape as in Example 1 was prepared, and an alumina film having a thickness of 100 μm was formed on the side surface of the Al by plasma spraying instead of the insulating layer.

[0088] (Evaluation of electrical insulation) The Mo was grounded, and the insulation resistance was evaluated by applying the probe of an insulation resistance meter (DC 1000V) to 100 random points on the insulating layer or alumina film. A value of 50MΩ or more was considered a pass.

[0089] (Measurement results) All of the examples had an insulation resistance of 50 MΩ or higher, confirming high electrical insulation. Comparative Example 1 showed poor insulation in 7 out of 100 locations, indicating insufficient electrical insulation. This is thought to be because thermal spray coatings are essentially porous, non-flat areas such as corners of uneven surfaces tend to have particularly sparse structures, and it is difficult to form a coating thick enough to ensure sufficient insulation, making it difficult to ensure localized electrical insulation. In contrast, the insulating layer of the present invention is a sintered body, has a lower porosity than a thermal spray coating, and is easily thickened, making it easy to ensure electrical insulation.

[0090] (Elemental analysis) Next, a cut surface perpendicular to the lamination direction of the sample of Example 1 was subjected to elemental analysis and mapping using an EPMA. It was found that Y and O were present in the insulating layer and the ceramic member (AlN sintered body), but were present in greater amounts at the bonding interface between the insulating layer or ceramic member and the metal member. In other words, it was confirmed that the metal and oxygen concentrations constituting the second phase of the ceramic sintered body at the bonding interface between the insulating layer or ceramic member and the metal member were greater than the metal and oxygen concentrations inside the ceramic sintered body, respectively.

[0091] Fig. 8 is a schematic diagram of a cross section cut vertically from the side of Example 1. The cross section of the same field of view was subjected to elemental analysis using an EPMA, and the results were compared with the results of SEM image color tone differences. As a result, it was found that the vicinity of the bonding interface of the bonded body was layered in the following order from the right in the schematic diagram of Fig. 8: an AlN ceramic layer, an oxygen-rich AlN ceramic layer, a Mo layer which is a high-melting-point metal, a carbide layer containing carbonized Mo, and a Mo layer. Furthermore, it was found that the cross sections of Examples 2 and 5 had similar structures, although the thicknesses of the layers were different.

[0092] The AlN ceramic layer and the oxygen-rich AlN ceramic layer showed no difference in color tone in the SEM images. Furthermore, the oxygen-rich AlN ceramic layers of Examples 1 and 2 contained not only O but also Y in large amounts compared to the AlN ceramic layers located relatively far from the bonding interface. The oxygen-rich AlN ceramic layer of Example 5 contained a large amount of O. The AlN ceramic layer and the oxygen-rich AlN ceramic layer were not distinguishable by a clear standard, as there were areas in the ceramic members with relatively different amounts of oxygen, etc.

[0093] The carbide layer of the refractory metal was formed at a position a little distance from the bonded interface. The carbon required for carbide formation in the refractory metal is thought to be derived from the raw materials or from the environment, but the reason why such a layer formed at a position a little distance from the bonded interface is unknown.

[0094] (Measurement of the thickness of the carbide layer) The average thickness of the carbide layer of the high-melting point metal was measured using 1000x SEM images. The results were 24 μm for Example 1, 14 μm for Example 2, 17 μm for Example 3, 16 μm for Example 4, 2 μm for Example 5, 32 μm for Example 6, and 36 μm for Example 7. It was confirmed that the carbide layer of the high-melting point metal tends to become thicker as the amount of additives contained in the granulated powder increases or the firing time increases.

[0095] The bonded body of the present invention is believed to have high bond strength because the average thickness of the carbide layer of the high-melting-point metal formed at the bonding interface between the ceramic sintered body and the metal member can be sufficiently thin. Furthermore, the presence of a high concentration of oxygen at the bonding interface between the ceramic sintered body and the metal member is likely to result in chemical bonding between the high-melting-point metal and AlN via oxygen. When the ceramic sintered body contains a metal oxide constituting a second phase, not only oxygen but also the metal constituting the second phase of the ceramic sintered body is present at a high concentration at the bonding interface between the ceramic sintered body and the metal member. This may also contribute to the bond strength. However, the addition of the metal oxide constituting the second phase to the raw materials promotes carbide formation during uniaxial pressing, resulting in a thick average thickness of the carbide layer of the high-melting-point metal, and therefore the bond strength itself is believed to be low.

[0096] Example 8 Two through holes of φ12 mm (PCD: 40 mm, equidistantly spaced) were formed in the metal member precursor of Example 1. Then, the metal member precursor was placed on a compact having a diameter of φ80 mm, and granulated powder was filled into the through holes and the side surfaces of the metal member precursor, and the granulated powder was further filled into the metal member precursor so that the thickness was 10 mm from the top surface of the metal member precursor to embed Mo. Except for this, a joined body of Example 8 was produced using the same steps and conditions.

[0097] After firing the bonded body of Example 8, the ceramic sintered body formed on the side surface of the metal member was removed until its thickness was 1 mm, and then a hole of Φ8 mm was drilled coaxially with the through hole in the ceramic of the same quality formed in the through hole of the metal member. As a result, an insulating sleeve (insulating layer) with a thickness of 2 mm bonded to Mo was provided in the through hole.

[0098] Example 9 (Production of electrode-embedded member) In Example 9, a heater electrode was embedded in an AlN sintered body (ceramic member) located on a metal member precursor in the manufacturing method of Example 8, to produce a heater module that can be used in high-temperature processes.

[0099] The same granulated powder as in Example 1 was prepared. Furthermore, as a metal member precursor, a plate-shaped Mo was prepared, which had an upper diameter of Φ298 mm, a thickness of 10 mm, a lower diameter of Φ298 mm, a thickness of 10 mm, a groove with a width of 5 mm and a depth of 5 mm in the middle in the thickness direction, and two through holes with a diameter of Φ12 mm at positions 20 mm radius from the center corresponding to terminal holes.

[0100] First, a heater laminate was produced. The granulated powder was filled into a bottomed carbon mold and press-molded with a carbon punch to produce a compact with a diameter of 320 mm and a thickness of 8 mm. Next, a heater electrode was placed on the mold. The heater electrode was a Mo mesh (wire diameter 0.1 mm, mesh size #50, plain weave) cut into a predetermined pattern to match the resistance value of the heater electrode. Next, the granulated powder was further filled into the carbon mold to embed the heater electrode, producing a heater laminate. At this time, the granulated powder was filled and molded with a carbon punch so that the thickness from the top surface of the heater electrode was 8 mm.

[0101] Next, a plate-shaped Mo was placed on the heater laminate to prepare a laminate. In this way, a heater laminate and a laminate in which the plate-shaped Mo were stacked were prepared.

[0102] Then, with the carbon punch inserted into the carbon mold, uniaxial hot press firing was performed at a temperature of 1800°C, a pressure of 4 MPa, and a N2 atmosphere for 4 hours. After firing, the outer shape (Φ300 mm x 18 mm) was processed. Drilling of terminal holes (Φ8 mm) for connecting the electrodes to an external power supply, connection of the terminals, and fabrication of the necessary insulating structure were performed simultaneously during processing after firing. In this way, the electrode-embedded member of Example 9 was produced.

[0103] (evaluation) The fabricated heater module could be heated to 400°C by applying electricity to the heater electrodes from an external power source.

[0104] From the above, it was confirmed that the bonded body or electrode-embedded member of the present invention can bond an insulating layer made of a ceramic sintered body mainly composed of AlN to the desired surface of a metal member that serves as a base, such as a substrate holder, and can provide a bonded body with improved electrical insulation. It was also confirmed that the thick metal member can be used for various purposes, such as as a heat sink. It was also confirmed that the manufacturing method of the present invention can produce such a bonded body or electrode-embedded member.

[0105] The present invention is not limited to the above-described embodiments, and it goes without saying that various modifications and equivalents are included within the spirit and scope of the present invention. Furthermore, the structure, shape, number, position, size, etc. of the components shown in each drawing are for the convenience of explanation and may be changed as appropriate. [Explanation of symbols]

[0106] 10 Metallic parts 12 One main surface 14 Other main surface 16 Side 20 through holes 22 Groove 24 Metallic component precursors 30 insulating layer 32 Granulated powder 34 Laminate 36 Sintered ceramics 40 First ceramic member 45 Second ceramic component 50 electrodes 60 Carbon type 70 Carbon Punch 100, 200 zygote 250 Electrode embedding material

Claims

1. A bonded body including a metal member made of a high-melting-point metal having a melting point of 2000°C or higher and an insulating layer made of a ceramic sintered body containing AlN as a main component, The maximum thickness in a direction perpendicular to one main surface of the metal member is 1 mm or more, the insulating layer is directly bonded to at least a part of the metal member excluding two surfaces, i.e., the one main surface and the other main surface opposite to the one main surface, A bonded body, wherein the oxygen concentration at the bonding interface between the insulating layer and the metal member is higher than the oxygen concentration inside the insulating layer.

2. the metal member has a carbide layer containing a carbide of the high-melting-point metal in the vicinity of a bonding interface between the metal member and the insulating layer, 2. The joined body according to claim 1, wherein the average thickness of the carbide layer is 40 μm or less.

3. the metal member has a through-hole penetrating in a thickness direction, or a groove on one main surface, the other main surface, or a side surface, 3. The bonded body according to claim 1, wherein the insulating layer is bonded to an inner surface of the through-hole or a surface including the groove.

4. 4. The joined body according to claim 1, wherein the metal member contains 1 wt % or less of a second metal oxide, which is an oxide of a metal different from the high-melting-point metal.

5. 5. The joined body according to claim 1, wherein a first ceramic member made of a ceramic sintered body containing AlN as a main component is joined to the one main surface of the metal member.

6. 6. The joined body according to claim 5, wherein a second ceramic member made of a ceramic sintered body containing AlN as a main component is further joined to the other main surface of the metal member.

7. The bonded body according to claim 5 ; an electrode embedded in the first ceramic member of the joined body;

8. A method for manufacturing a bonded body including a metal member made of a high-melting point metal having a melting point of 2000°C or higher and an insulating layer made of a ceramic sintered body containing AlN as a main component, the method comprising: a preparation step of preparing a granulated powder by granulating AlN raw material powder or a powder obtained by adding a metal oxide raw material powder to the AlN raw material powder; adding more than 0 wt % to 1 wt % of a second metal oxide to the high melting point metal; a filling and stacking step of arranging the granulated powder or the compact formed from the granulated powder, and a plate-shaped metal member precursor having a thickness of 1 mm or more and made of a high-melting point metal to which the second metal oxide has been added, in a carbon mold such that one main surface of the metal member precursor is perpendicular to a stacking direction, and stacking the metal member precursor such that a gap between a side surface of the metal member precursor and the carbon mold is filled with the granulated powder or the compact; a laminate forming step of inserting a carbon punch into the carbon mold to form a laminate; a firing step of uniaxially pressurizing and firing the laminate; a removal processing step of removing, after the uniaxial pressure sintering, the ceramic sintered body formed on the metal member precursor while leaving a predetermined thickness.

9. the metal member precursor has a through-hole penetrating in a thickness direction, or a groove on one main surface, the other main surface, or a side surface, 9. The method for manufacturing a bonded body according to claim 8, wherein the removing step includes a step of removing the ceramic sintered body formed in the through hole or the groove so as to leave a predetermined thickness.

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