Display panel, display module, and electronic device

Abstract

The present application provides a display panel, a display module, and an electronic device. The display panel includes a substrate, a display functional film layer disposed on the substrate, and at least one light sensor. The display functional film layer includes at least a semiconductor layer and a plurality of metal electrode layers stacked together, and the semiconductor layer has a first P-type lightly doped region and a first P-type heavily doped region. The first doped region or the second doped region, or both light sensors, have the same material and the same doping concentration as the first P-type heavily doped region. When the first P-type heavily doped region is formed, the doped region of the light sensor can be formed at the same time without requiring an additional doping process. The input electrode and the output electrode of the light sensor are respectively disposed in the same layer as at least one of the plurality of metal electrode layers. In this way, when the metal electrode layer is formed, the patterns of the input electrode and the output electrode are formed at the same time without requiring an additional Mask process. Therefore, the cost of the display panel can be reduced.

Description

[Technical Field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS This application claims priority to Chinese Patent Application No. 202110342330.9, entitled "DISPLAY PANEL, DISPLAY MODULE, AND ELECTRONIC DEVICE," filed with the State Intellectual Property Office of China on March 30, 2021, which is incorporated herein by reference in its entirety.

[0002] The present application relates to the field of display technology, and in particular to display panels, display modules, and electronic devices. [Background technology]

[0003] Optical sensors use the photoelectric conversion function of optoelectronic devices to convert the optical signal of a photosensitive surface into an electrical signal of a corresponding ratio. Currently, optical sensors are widely used in various electronic devices. For example, optical sensors in mobile phones may be used to detect the lighting conditions of the current environment, so that the brightness of the display screen can be adjusted to be comfortable and not dazzling to the human eye. In addition, optical sensors can further detect light of specific wavelengths (such as red light, green light, blue light, infrared light, and ultraviolet light), and perform more functions and applications, such as color temperature detection, proximity light detection, and ultraviolet intensity detection.

[0004] Currently, with the trend toward extremely large screen-to-body ratios for the entire screen, independent optical sensors, including co-located sensors and chips, have become too large in size to be placed in the edge regions of the display screen. Therefore, a structure in which the optical sensor is placed below the screen, as shown in Figure 1, is usually used. However, in this structure, the screen blocks light and significantly reduces light transmittance, so a more sensitive optical sensor is required.

[0005] Therefore, related art has proposed a solution of integrating a PIN structure photosensor into a display screen to reduce the number of film layers above the photosensor and improve the transmittance of light output by the photosensor. Figure 2 shows a PIN structure integrated into a screen. A semiconductor material layer is disposed on a display panel substrate 1, and doping is performed in the semiconductor material layer to form a P-type heavily doped region (P+), an N-type heavily doped region (N+), and an intrinsic photo-sensing region (I). The P+ and N+ regions are connected to metal electrodes 2 and 3, respectively, and are used for signal reading and bias voltage input, respectively. Gate electrode 4 is disposed above metal electrodes 2 and 3. Because external light must be irradiated onto the I region through gate electrode 4, gate electrode 4 is fabricated using a transparent conductive material. However, in related art, forming the PIN structure requires four additional mask processes based on the existing display panel manufacturing process. These four mask processes are the formation of the P+ region, the formation of the N+ region, the formation of the I region, and the formation of the gate electrode. Therefore, by integrating the PIN structure into the screen, the cost of the display panel is significantly reduced. Summary of the Invention [Means for solving the problem]

[0006] The present application provides a display panel, a display module, and an electronic device configured to reduce the cost of the display panel.

[0007] According to a first aspect, an embodiment of the present application provides a display panel including a display substrate and an opposing substrate arranged opposite each other. The display substrate includes a substrate, a display functional film layer arranged on the substrate, and at least one photosensor. The display functional film layer includes at least a stacked semiconductor layer and a plurality of metal electrode layers, and the semiconductor layer has a first P-type lightly doped region and a first P-type heavily doped region. The photosensor includes an input electrode, an output electrode, and a channel region, a first doped region, and a second doped region arranged in the same layer as the semiconductor layer. The first doped region and the second doped region are arranged on either side of the channel region, and the input electrode is electrically connected to the first doped region, and the output electrode is electrically connected to the second doped region. The first doped region has the same material and doping concentration as the first P-type heavily doped region, or the second doped region has the same material and doping concentration as the first P-type heavily doped region, or the first doped region and the second doped region both have the same material and doping concentration as the first P-type heavily doped region. The input electrode and the output electrode are each disposed in the same layer as at least one of the plurality of metal electrode layers.

[0008] In the display panel provided in the embodiment of the present application, the photosensor includes a channel region, a first doped region, and a second doped region, which are arranged in the same layer as the input electrode, the output electrode, and the semiconductor layer. The input electrode and the output electrode are each arranged in the same layer as at least one of the plurality of metal electrode layers of the display functional film layer. When the plurality of metal electrode layers are formed, the patterns of the input electrode and the output electrode may be formed simultaneously. In this way, when the pattern of the metal electrode layer is formed, only the mask pattern needs to be changed, and no additional masking process is required. In addition, at least one of the two doped regions of the photosensor has the same material and doping concentration as the first P-type heavily doped region of the display functional film layer. When the first P-type heavily doped region is formed, the doped region of the photosensor can be formed simultaneously without the need for an additional doping process. When the channel region and the doped region are formed for the display panel of the present application, at most two additional masking processes are required. Compared to the related art, which requires four additional masking processes, at least two masking processes may be eliminated, thereby reducing the cost of the display panel.

[0009] It should be noted that the multiple metal electrode layers of the display functional film layer in this application generally include a layer on which a source electrode is disposed, a layer on which a drain electrode is disposed, a layer on which a gate electrode is disposed, etc. This is not limited thereto. The input electrode in this application may be disposed on the same layer as one of the multiple metal electrode layers, or the input electrode may include multiple layers, each of which is disposed on the same layer as one of the multiple metal electrode layers. Similarly, the output electrode may be disposed on the same layer as one of the multiple metal electrode layers, or the output electrode may include multiple layers, each of which is disposed on the same layer as one of the multiple metal electrode layers. This is not limited thereto. In this application, it is only necessary to ensure that the input electrode and output electrode of the photosensor and the metal electrode layer of the display functional film layer are formed using the same mask process.

[0010] To further reduce costs, the channel region of the photosensor may have the same material and doping concentration as the first P-type lightly doped region, so that when the first P-type lightly doped region of the display functional film layer is formed, the channel region of the photosensor may be formed at the same time, and no additional doping process is required, thereby reducing costs.

[0011] Of course, in a specific implementation, the channel region of the photosensor may be made of an intrinsic semiconductor material, which is not limited here.

[0012] In the present application, when both the first doped region and the second doped region have the same material and the same doping concentration as the first P-type heavily doped region, the two doped regions of the photosensor may be formed simultaneously when the first P-type heavily doped region of the display functional film layer is formed, and no additional doping process is required.

[0013] Of course, in specific implementation, when only one of the first doped region and the second doped region has the same material and doping concentration as the first P-type heavily doped region, the other doped region may be set as an N-type doped region. In other words, when the first doped region has the same material and doping concentration as the first P-type heavily doped region, the second doped region is an N-type doped region, or when the second doped region has the same material and doping concentration as the first P-type heavily doped region, the first doped region is an N-type doped region.

[0014] It should be noted that in the present application, the gate electrode may or may not be disposed on the photosensor, which is not limited here.

[0015] For example, the photosensor may further include at least one gate electrode disposed in the same layer as one of the plurality of metal electrode layers. In this manner, when the metal electrode layer is formed, the gate electrode can be formed simultaneously by changing only the mask pattern, and no additional mask process is required. In addition, the orthogonal projection of the at least one gate electrode on the channel region partially overlaps the channel region, thereby ensuring that light can be irradiated onto the channel region of the photosensor.

[0016] Compared with the case where a gate electrode is not disposed on the photosensor, the channel region can be narrowed by disposing a gate electrode on the photosensor in the present application, which reduces the resistance of the channel region, thus increasing the photosensitive current and improving the photosensitive efficiency of the photosensor.

[0017] In particular, when at least one gate electrode is disposed on the photosensor, the position of each gate electrode is not limited in the present application, as long as there is an overlapping region between each gate electrode and the channel region. In the present application, the initial current output by the output electrode when the photosensor is not illuminated and the induced current output by the output electrode when the photosensor is illuminated can be adjusted by changing the potential at the gate electrode.

[0018] Optionally, in the present application, when the photosensor includes one gate electrode, the gate electrode may be disposed closer to the output electrode.

[0019] The operating principle of the photosensor (also called a photodiode) provided in this application is as follows: in the absence of light, the reverse current in the channel region is very small (generally less than 0.1 microamperes) and is called dark current. In the presence of light, energy-carrying photons enter the channel region and transfer energy to bind electrons through covalent bonds, causing some electrons to break free from the covalent bonds and generate electron-hole pairs, which are called photogenerated carriers. Under a reverse voltage, the electron-hole pairs float, so the reverse current is obviously large. The higher the light intensity, the larger the reverse current. When the photosensor is operating, electron-hole pairs are mainly formed in the unblocked region (depletion region) of the channel region. The concentration of the formed electron-hole pairs changes depending on the intensity of the absorbed light. Stronger light indicates a higher concentration of electron-hole pairs, a smaller equivalent resistance in the depletion region, and a larger output current signal. The light intensity can be obtained by processing the output current signal.

[0020] The optical sensor in the present application is characterized by high sensitivity due to the large resistance of the depletion region and the small dark current (leakage current) especially when no light is irradiated. In addition, the dark current can be further adjusted by adjusting the potential of the gate electrode and the voltage difference between the input electrode and the output electrode.

[0021] In practical application, the light sensor of the display panel provided in the embodiments of the present application may be configured to detect the intensity of ambient light, or may be configured to detect the intensity of light of a specific wavelength (red light / green light / blue light / infrared light / ultraviolet light) to perform some specific functions. For example, screen brightness is adjusted by detecting ambient light. The adjustment principle may be as follows: the light sensor senses the light intensity of the surrounding environment, converts the light signal into an electrical signal, and outputs the electrical signal. The IC processes the output electrical signal, converts the current analog signal into a digital signal, and then reports the digital signal. The digital signal is processed using an algorithm and then multiplied by a corresponding coefficient to obtain a brightness value. The brightness value corresponds to the dimming stage of the screen. Whether the screen needs to be dimmed is determined by judgment. If dimming is needed, the driver chip outputs a corresponding driving current to adjust the brightness of the display screen.

[0022] In a specific implementation, the display panel may include a display area and a non-display area. The pixels for the display are located in the display area, and the driver circuitry and traces are generally located in the non-display area. The photosensor may be located in the display area or the non-display area. This is not a limitation here.

[0023] In specific implementations, the display substrate may include a plurality of light sensors, and the plurality of light sensors may all be disposed in the non-display area, or the plurality of light sensors may all be disposed in the display area, or, of course, some of the plurality of light sensors may be disposed in the non-display area and other parts of the plurality of light sensors may be disposed in the display area, but this is not limited thereto.

[0024] In practical application, in this application, a plurality of optical sensors arranged in a matrix may be arranged in the display area, and the touch function may be implemented by detecting the light intensity of each optical sensor. Alternatively, a plurality of optical sensors may be arranged in the fingerprint recognition area, and the fingerprint recognition function may be implemented by sensing the relative light intensity between the fingerprint valleys and the fingerprint ridges at the fingerprint touch position. Alternatively, at least one optical sensor may be arranged on each side of the display panel. The left and right sides are used as an example. The gesture recognition function may be implemented by detecting the time series of the output signals of the optical sensors on both sides.

[0025] According to a second aspect, an embodiment of the present application further provides a display module. The display module may include a display panel, a polarizer, and a cover layer stacked in order. The display panel may be the display panel provided in the first aspect. Compared with display panels provided in the related art, the cost of the display panel provided in the embodiment of the present application may be reduced. Therefore, the cost of the display module provided in the embodiment of the present application may also be reduced.

[0026] Optionally, in the display module, the display panel has a display area and a non-display area. A plurality of light sensors are disposed in the non-display area of ​​the display panel. The display module further includes a light-blocking ink layer and at least one light filter film disposed between the display panel and the cover layer. An orthogonal projection of the light-blocking ink layer onto the display panel covers the non-display area, and an orthogonal projection of each light filter film onto the display panel is disposed in the non-display area, and each light filter film corresponds to at least one light sensor.

[0027] The light-shielding ink layer is used to shield the non-display area of ​​the display panel, and the light-shielding ink layer has at least one first opening and at least one second opening corresponding to each light filter film, and each of the first openings corresponds to at least one light sensor, and orthogonal projection of the light filter film onto the display panel covers orthogonal projection of the at least one second opening corresponding to the light filter film onto the display panel, and orthogonal projection of the light filter film onto the display panel does not overlap with orthogonal projection of the first opening onto the display panel.

[0028] Optionally, the at least one light filter film may include at least one yellow light filter film, at least one cyan light filter film, and at least one magenta light filter film, and the light-blocking ink layer particularly has at least one first opening, and at least one second opening corresponding to each yellow light filter film, at least one second opening corresponding to each cyan light filter film, and at least one second opening corresponding to each magenta light filter film. The orthogonal projection of the yellow light filter film onto the display panel covers the orthogonal projection of at least one second opening corresponding to the yellow light filter film onto the display panel, the orthogonal projection of the cyan light filter film onto the display panel covers the orthogonal projection of at least one second opening corresponding to the cyan light filter film onto the display panel, the orthogonal projection of the magenta light filter film onto the display panel covers the orthogonal projection of at least one second opening corresponding to the magenta light filter film onto the display panel, and the orthogonal projections of the yellow light filter film, the cyan light filter film, and the magenta light filter film onto the display panel do not overlap with the orthogonal projection of the first opening onto the display panel. In a specific implementation, the light filter film and the light-blocking ink layer may be disposed on the same layer. Of course, the light filter film and the light-blocking ink layer may be disposed on different layers. This is not a limitation herein.

[0029] For example, any four optical sensors may be used as a group of detection units, and at least one group of detection units may be arranged in a non-display area. In each group of detection units, one optical sensor corresponds to one first opening, and the other three optical sensors correspond to three second openings, which correspond to one yellow light filter film, one magenta light filter film, and one cyan light filter film, respectively. The yellow light filter film may allow yellow light to pass through, the magenta light filter film may allow magenta light to pass through, and the cyan light filter film may allow cyan light to pass through. Therefore, the intensity values ​​of B (blue light), G (green light), R (red light), and NIR (infrared light) in the ambient light may be calculated by detecting the intensities of yellow light, cyan light, magenta light, and white light (i.e., light passing through the first openings) in the ambient light.

[0030] Furthermore, the function of detecting the color temperature of the environment may be further implemented using the intensity values ​​of B (blue light), G (green light), and R (red light).

[0031] Compared with the direct detection of the intensity values ​​of B (blue light), G (green light), and R (red light) in the ambient light, the calculation of the intensity values ​​of B (blue light), G (green light), and R (red light) in the ambient light by detecting the intensities of yellow light, cyan light, magenta light, and white light in the ambient light in the present application can enhance the low illuminance detection capability by more than two times. Therefore, in the present application, yellow, cyan, and magenta are used to replace red, blue, and green as the measurement channels of the color temperature of the environment, so that the amount of light entering the light sensor can be increased by more than two times, thereby improving the display module in low illuminance. Integrated light sensor Improved sensing ability.

[0032] In addition, in the present application, the infrared light channel does not need to be manufactured, the number of light sensors and the number of analog-to-digital conversion channels on the chip can be reduced, and the process of manufacturing the infrared light filter film is not required, thereby reducing the complexity and cost of manufacturing the display module.

[0033] Optionally, the display module may further include a first quarter-wave retardation layer and a second quarter-wave retardation layer, respectively, disposed on either side of the polarizer. When external ambient light passes through the polarizer and becomes linearly polarized light, the linearly polarized light must be reflected by the backplane of the display panel and then irradiated onto the polarizer and pass through the second quarter-wave retardation layer twice. Therefore, the polarization direction of the linearly polarized light is perpendicular to the polarization direction of the polarizer, and the reflected linearly polarized light cannot pass through the polarizer, thereby reducing the reflectivity of the display module. Similarly, light emitted by the display panel is converted into linearly polarized light by the polarizer, and light reflected by an object (such as a face) must also pass through the first quarter-wave retardation layer twice. Therefore, the polarization direction of the linearly polarized light is perpendicular to the polarization direction of the polarizer, and the reflected linearly polarized light cannot pass through the polarizer. This prevents the light emitted by the display panel from irradiating the light sensor after being reflected by the object, resulting in measurement errors due to deviations from the actual environment.

[0034] For example, the display module may further include a touch layer disposed between the display panel and the cover layer. In a specific implementation, the touch layer may be disposed between the display panel and the polarizer, which is not limited herein.

[0035] According to a third aspect, an embodiment of the present application further provides an electronic device, which may include the display module provided in the second aspect. The solution principle of the electronic device is similar to that of the display module described above. Therefore, for the implementation of the electronic device, please refer to the implementation of the display module described above, and details will not be repeated.

[0036] Specifically, the electronic device of the present application can detect the lighting conditions of the current environment using an optical sensor integrated into the display panel, and adjust the screen brightness of the display panel to make it comfortable and not dazzling to the human eye, thereby reducing the power consumption of the display screen. For example, the electronic device is a mobile phone, tablet, portable computer, display, or television. The electronic device can further detect specific wavelengths of light (e.g., red light / green light / blue light / infrared light / ultraviolet light) using the optical sensor integrated into the display panel, and implement more functions and applications, such as color temperature detection, proximity light detection, and ultraviolet intensity detection. For example, a mobile phone, tablet, watch, computer, monitor screen, or television can detect specific wavelengths of light (e.g., ultraviolet light / infrared light) in external ambient light to implement specific functions. For example, infrared sensing can be used for proximity detection, and ultraviolet sensing can be used to implement a UV index sensor. [Brief explanation of the drawings]

[0037] [Figure 1] 1 is a schematic diagram of the location of light sensors on a display panel according to the related art; [Figure 2] 1 is a schematic diagram of the structure of a light sensor of a display panel according to the related art; [Figure 3] 1 is a schematic diagram of an application scenario according to an embodiment of the present application; [Figure 4] FIG. 1 is a schematic diagram of another application scenario according to an embodiment of the present application; [Figure 5] FIG. 10 is a schematic diagram of yet another application scenario according to an embodiment of the present application. [Figure 6] 1 is a schematic diagram of a structure of an LCD panel according to an embodiment of the present application; [Figure 7] 1 is a schematic diagram of the structure of an AMOLED display panel according to an embodiment of the present application. [Figure 8] 1 is a schematic diagram of a structure of a display panel according to an embodiment of the present application; [Figure 9] FIG. 2 is a schematic diagram of a structure of a display panel according to another embodiment of the present application. [Figure 10] FIG. 10 is a schematic diagram of a structure of a display panel according to yet another embodiment of the present application. [Figure 11] 1 is a schematic diagram of the working principle of an optical sensor according to an embodiment of the present application; [Figure 12] FIG. 2 is a schematic diagram of an equivalent circuit of a light sensor according to an embodiment of the present application. [Figure 13] 1 is a schematic diagram of a partial structure of a display panel according to an embodiment of the present application; [Figure 14] FIG. 2 is a schematic diagram of a partial structure of a display panel according to another embodiment of the present application. [Figure 15] FIG. 10 is a schematic diagram of a partial structure of a display panel according to yet another embodiment of the present application. [Figure 16] 1 is a schematic diagram of the working principle of adjusting the display brightness of a display panel based on a light sensor according to the present application; [Figure 17] FIG. 10 is a schematic diagram of a structure of a display panel according to yet another embodiment of the present application. [Figure 18] FIG. 10 is a schematic diagram of a structure of a display panel according to yet another embodiment of the present application. [Figure 19] FIG. 10 is a schematic diagram of a structure of a display panel according to yet another embodiment of the present application. [Figure 20] 20 is a time series diagram of an output signal of an optical sensor of the display panel shown in FIG. 19. [Figure 21] 1 is a schematic diagram of a cross-sectional structure of a display module according to an embodiment of the present application; [Figure 22] 1 is a schematic diagram of a top structure of a display module according to an embodiment of the present application; [Figure 23] 23 is a schematic diagram of a cross-sectional structure of a display module shown along the AA' direction in FIG. 22. FIG. [Figure 24]23 is a schematic diagram of a cross-sectional structure of a display module shown along the BB' direction in FIG. 22. FIG. [Figure 25] 23 is a schematic diagram of another cross-sectional structure of the display module shown along the BB' direction in FIG. 22. FIG. [Figure 26] FIG. 2 is a schematic curve diagram of transmittance and wavelength of a light filter film according to an embodiment of the present application. [Figure 27] 1 is a schematic diagram of a structure of a display module according to an embodiment of the present application; [Figure 28] FIG. 10 is a schematic diagram of a cross-sectional structure of a display module according to yet another embodiment of the present application. DETAILED DESCRIPTION OF THE INVENTION

[0038] To make the objectives, technical solutions and advantages of the present application clearer, the present application will be further described in detail below with reference to the accompanying drawings.

[0039] To facilitate understanding of the display panel provided in the embodiments of the present application, the application scenarios of the display panel will be described first hereinafter.

[0040] The present application may be applied to any electronic device incorporating a light sensor and a display panel. In one application scenario, the electronic device can use a light sensor integrated into the display panel to detect the lighting conditions of the current environment and adjust the screen brightness of the display panel to make it comfortable and not dazzling to the human eye and reduce the power consumption of the display screen. For example, the electronic device is a mobile phone as shown in FIG. 3, or a tablet, portable computer, display, television, etc. as shown in FIG. 4. In another application scenario, the electronic device can use a light sensor integrated into the display panel to detect light of a specific wavelength (e.g., red light / green light / blue light / infrared light / ultraviolet light) and implement more functions and applications, such as color temperature detection, proximity light detection, and ultraviolet intensity detection. For example, the mobile phone, tablet, or watch, computer, monitor screen, or television shown in FIG. 5 detects light of a specific wavelength (e.g., ultraviolet light / infrared light) in external ambient light to implement a specific function. For example, infrared sensing may be used for proximity detection, and ultraviolet sensing may be used to implement a UV index sensor.

[0041] However, in related art display panels that are part of a screen and integrated with a light sensor, the light sensor has a PIN structure. See FIG. 2. During manufacturing, a semiconductor material layer on a substrate 1 of the display panel is doped to form a PIN structure: a heavily doped P-type region (P+), a heavily doped N-type region (N+), and an intrinsic light-sensing region (I). The P+ and N+ regions are connected to metal electrodes 2 and 3, respectively, and are used for signal reading and bias voltage input. Gate electrode 4 is disposed above metal electrodes 2 and 3. Because external light must be irradiated onto the I region through gate electrode 4, gate electrode 4 is fabricated using a transparent conductive material. However, in related art, four mask processes are added to the existing display panel manufacturing process to form the PIN structure: forming the P+ region, the N+ region, the I region, and the gate electrode. Therefore, integrating the PIN structure into the screen significantly reduces the cost of the display panel.

[0042] Therefore, the embodiments of the present application provide a display panel that belongs to a screen and is integrated with a light sensor. By modifying the structure of the light sensor of the screen, the manufacturing cost of the display panel is reduced.

[0043] In order to make the technical solution of this application easier to understand, Display panel The following description will be more particularly directed to the following embodiments with reference to the accompanying drawings.

[0044] The terms used in the following embodiments are merely for the purpose of describing particular embodiments and are not intended to limit the present application. As used in this specification and the appended claims of this application, the singular expressions "one," "a," "the foregoing," "the," and "the one" are also intended to include expressions such as "one or more," unless the context clearly indicates otherwise. It should be further understood that in the following embodiments of this application, "at least one" and "one or more" refer to one, two, or more. The term "and / or" is used to describe an association relationship between associated objects and indicates that three relationships may exist. For example, A and / or B can represent the cases where only A is present, where both A and B are present, and where only B is present, and A and B may be singular or plural. The character " / " generally indicates an "or" relationship between associated objects.

[0045] References to "one embodiment," "some embodiments," etc. described herein indicate that one or more embodiments of the present application include the particular feature, structure, or characteristic described with reference to the embodiment. Thus, statements such as "in one embodiment," "in some embodiments," "in some other embodiments," and "in other embodiments" appearing in various places herein do not necessarily mean to refer to the same embodiment. Instead, these statements mean "one or more, but not all, embodiments," unless specifically emphasized otherwise. The terms "including," "comprising," and "having," and variations thereof, all mean "including, but not limited to," unless specifically emphasized otherwise.

[0046] To facilitate understanding of the display panel belonging to a screen and integrated with a light sensor provided in this application, the following first describes the structure of a conventional display panel.

[0047] A conventional display panel mainly includes a display substrate and an opposing substrate. The display substrate mainly includes a substrate and a display functional film layer disposed on the substrate. The display functional film layer includes multiple film layers. Display panels of different types and functions have different display functional film layers. For the purposes of explanation below, the display panel will be taken as an example of a liquid crystal display (LCD) panel or an active matrix organic light emitting diode (AMOLED) display panel.

[0048] FIG. 6 is a schematic diagram of the structure of an LCD panel according to one embodiment of the present application. The LCD panel 10 mainly includes a substrate 11, a circuit film layer 12, a pixel electrode layer 13, a lower alignment film layer 14, a liquid crystal layer 15, an upper alignment film layer 16, a common electrode layer 17, a color filter layer 18, and an opposing substrate 19. The substrate 11 and the opposing substrate 19 may be made of a transparent material such as glass. The circuit film layer 12, the pixel electrode layer 13, the lower alignment film layer 14, the liquid crystal layer 15, the upper alignment film layer 16, the common electrode layer 17, and the color filter layer 18 may be collectively referred to as display functional film layers. It should be noted here that the structures of the display functional film layers of different types of LCD panels may also be different. FIG. 6 is just an example of one LCD panel.

[0049] In an LCD panel, thin film transistors (TFTs) and various traces are mainly disposed on a circuit film layer 12. For example, as shown in FIG. 6, the circuit film layer 12 may include a semiconductor layer 121, a first insulating layer 122, a gate electrode 123, a second insulating layer 124, a source electrode 125, and a drain electrode 126. The semiconductor layer 121 may be made of semiconductor materials such as amorphous silicon, polycrystalline silicon, or oxide. The electrode contact region and the channel region of the TFT may be formed by doping the semiconductor layer 121 using different materials and different concentrations. The electrode contact region is generally a P-type heavily doped region (P+), and the channel region is generally a P-type lightly doped region (P-). Both the source electrode 125 and the drain electrode 126 of the TFT are electrically connected to the electrode contact region.

[0050] FIG. 7 is a schematic diagram of the structure of an AMOLED display panel according to one embodiment of the present application. The AMOLED display panel 20 mainly includes a substrate 21, a circuit film layer 22, an anode layer 23, a pixel limiting layer 24, a light-emitting layer 25, a cathode layer 26, and an opposing substrate 27. The substrate 21 and the opposing substrate 27 may be formed using transparent materials, such as rigid substrates such as glass, or flexible substrates such as polyimide (PI) or polycarbonate (PC). This is not limited here. The circuit film layer 22, the anode layer 23, the pixel limiting layer 24, the light-emitting layer 25, and the cathode layer 26 may be collectively referred to as display functional film layers. It should be noted here that the structures of the display functional film layers of different types of AMOLED display panels may also differ. FIG. 7 is just one example of an AMOLED display panel that generates color light. For example, in some AMOLED display panels, if the light emitted by the light-emitting layer is white light, a color filter layer is generally further disposed on the light-emitting layer. This will not be described in detail here.

[0051] In an AMOLED display panel, TFTs and various traces are further disposed on a circuit film layer 22. For example, as shown in FIG. 7 , the circuit film layer 22 may include a semiconductor layer 221, a first insulating layer 222, a gate electrode 223, a second insulating layer 224, a source electrode 225, and a drain electrode 226. The semiconductor layer 221 may be made of a semiconductor material such as amorphous silicon / polycrystalline silicon / oxide. The electrode contact region and the channel region of the TFT may be formed by doping the semiconductor layer 221 using different materials and different concentrations. The electrode contact region is generally a P-type heavily doped region (P+), and the channel region is generally a P-type lightly doped region (P−). Both the source electrode 225 and the drain electrode 226 of the TFT are electrically connected to the electrode contact region.

[0052] A circuit film layer having a TFT is disposed in both an LCD panel and an AMOLED display panel. Since the semiconductor layer and the different doped regions disposed in the semiconductor layer are disposed in the aforementioned display panel, in this application, the masking process of the existing display panel may be used as much as possible to form an integrated light sensor in the display panel, thereby reducing the number of additional masking processes. In the following, to describe the display panel provided in this application that belongs to the screen and is integrated with the light sensor, the display panel is exemplified as an LCD panel or an AMOLED display panel.

[0053] 8 is a schematic diagram of a structure of a display panel belonging to a screen and integrated with a photosensor according to an embodiment of the present application. The display panel 30 provided in this embodiment of the present application includes a display substrate 31 and an opposing substrate 32 arranged opposite each other. The display substrate 31 includes a substrate 310, a display functional film layer (not shown) arranged on the substrate 310, and at least one photosensor PD. The display functional film layer may include at least a stacked semiconductor layer and multiple metal electrode layers, and the semiconductor layer has a first P-type lightly doped region (P-) and a first P-type heavily doped region (P+). The photosensor PD may include an input electrode 01, an output electrode 02, and a channel region 03, a first doped region 04, and a second doped region 05 arranged in the same layer as the semiconductor layer. The first doped region 04 and the second doped region 05 are respectively disposed on either side of the channel region 03, with the input electrode 01 electrically connected to the first doped region 04 and the output electrode 02 electrically connected to the second doped region 05. The first doped region 04 has the same material and doping concentration as the first P-type heavily doped region (P+), or the second doped region 05 has the same material and doping concentration as the first P-type heavily doped region (P+), or both the first doped region 04 and the second doped region 05 have the same material and doping concentration as the first P-type heavily doped region (P+). The input electrode 01 and the output electrode 02 may each be disposed in the same layer as at least one of a plurality of metal electrode layers. In FIG. 8, an example in which the input electrode 01 and the output electrode 02 are each disposed in the same layer as one of a plurality of metal electrode layers is used for explanation.

[0054] In the display panel provided in the embodiment of the present application, the photosensor PD includes an input electrode 01, an output electrode 02, and a channel region 03, a first doped region 04, and a second doped region 05, which are arranged in the same layer as the semiconductor layer. The input electrode 01 and the output electrode 02 are each arranged in the same layer as at least one of the multiple metal electrode layers of the display functional film layer. When the multiple metal electrode layers are formed, the patterns of the input electrode 01 and the output electrode 02 may be formed simultaneously. In this way, when the pattern of the metal electrode layer is formed, only the mask pattern needs to be changed, and no additional mask process is required. In addition, at least one of the two doped regions 04 and 05 of the photosensor PD has the same material and doping concentration as the first P-type heavily doped region (P+) of the display functional film layer. When the first P-type heavily doped region (P+) is formed, the doped region of the photosensor can be formed simultaneously without the need for an additional doping process. When the channel region and the doped region are formed for the display panel of the present application, a maximum of two additional mask processes are required. Compared with the related art that requires four additional mask processes, at least two mask processes may be reduced, and therefore the cost of the display panel may be reduced.

[0055] It should be noted that the multiple metal electrode layers of the display functional film layer in this application may include a layer on which a source electrode is disposed, a layer on which a drain electrode is disposed, a layer on which a gate electrode is disposed, etc. This is not limited thereto. The input electrode in this application may be disposed on the same layer as one of the multiple metal electrode layers, or the input electrode may include multiple layers, each of which is disposed on the same layer as one of the multiple metal electrode layers. Similarly, the output electrode may be disposed on the same layer as one of the multiple metal electrode layers, or the output electrode may include multiple layers, each of which is disposed on the same layer as one of the multiple metal electrode layers. This is not limited thereto. In this application, it is only necessary to ensure that the input electrode and output electrode of the photosensor and the metal electrode layer of the display functional film layer are formed using the same mask process.

[0056] To further reduce costs, the channel region of the photosensor may have the same material and doping concentration as the first P-type lightly doped region (P-). In this way, when the first P-type lightly doped region (P-) of the display functional film layer is formed, the channel region of the photosensor may be formed at the same time, and no additional doping process is required, thereby reducing costs. In specific implementation, the doping concentration of the channel region is 1x10 13 / cm 3 It may be set to less than 100 . This is not a limitation here.

[0057] Of course, in a specific implementation, the channel region of the photosensor may be made of the intrinsic semiconductor material (I), which is not limited here.

[0058] In the present application, when both the first doped region and the second doped region have the same material and doping concentration as the first P-type heavily doped region (P+), the two doped regions of the photosensor can be formed simultaneously when the first P-type heavily doped region (P+) of the display functional film layer is formed, and no additional doping process is required. In specific implementation, the doping concentrations of the first doped region and the second doped region are 1x10 13 / cm 3 This is not a limitation here.

[0059] Of course, in specific implementation, when only one of the first doped region and the second doped region has the same material and doping concentration as the first P-type heavily doped region (P+), the other doped region may be set as an N-type doped region. In other words, when the first doped region has the same material and doping concentration as the first P-type heavily doped region (P+), the second doped region is an N-type doped region (N+), or when the second doped region has the same material and doping concentration as the first P-type heavily doped region (P+), the first doped region is an N-type doped region (N+).

[0060] It should be noted that in the present application, the gate electrode may or may not be disposed on the photosensor, which is not limited here.

[0061] See FIGS. 9 and 10. For example, the photosensor PD may further include at least one gate electrode 06 disposed in the same layer as one of the multiple metal electrode layers. For example, one gate electrode is used in the example shown in FIG. 9, and two gate electrodes are used in the example shown in FIG. 10. In this manner, when the metal electrode layer is formed, the gate electrode 06 can be simultaneously formed by changing only the mask pattern, and no additional mask process is required. In addition, the orthogonal projection of the at least one gate electrode 06 on the channel region 03 partially overlaps the channel region 03, so that light can be irradiated onto the channel region 03 of the photosensor PD.

[0062] Compared with the case where a gate electrode is not disposed on the photosensor, the channel region can be narrowed by disposing a gate electrode on the photosensor in the present application, which reduces the resistance of the channel region, thus increasing the photosensitive current and improving the photosensitive efficiency of the photosensor.

[0063] In particular, when at least one gate electrode is disposed on the photosensor, the position of each gate electrode is not limited in the present application, as long as there is an overlapping region between each gate electrode and the channel region. In the present application, the initial current output by the output electrode when the photosensor is not illuminated and the induced current output by the output electrode when the photosensor is illuminated can be adjusted by changing the potential at the gate electrode.

[0064] See Figure 9. Optionally, in the present application, when the photosensor PD includes one gate electrode 06, the gate electrode 06 may be disposed on the side closer to the output electrode 02.

[0065] In specific implementation, the display panel may further include an insulating layer disposed between the semiconductor layer and the metal electrode layer, and between different metal electrode layers. The insulating layer may be made of silicon nitride (SiNx), silicon oxide (SiOx), or a combination thereof. This is not limited here. For example, in FIG. 8, the insulating layer 311 is disposed between the channel region 03 (the layer on which the semiconductor layer is disposed) and the input electrode 01 (the layer on which the metal electrode layer is disposed). In FIGS. 9 and 10, the insulating layer 311 is disposed between the channel region 03 (a layer in which a semiconductor layer is disposed) and the gate electrode 06 (a layer in which a metal electrode layer is disposed), and is disposed between the gate electrode 06 (a layer in which a metal electrode layer is disposed) and the input electrode 01 (a layer in which another metal electrode layer is disposed).

[0066] Hereinafter, the present application will be described in detail using an example in which the plurality of metal electrode layers of the display panel includes a first metal electrode layer and a second metal electrode layer. It should be noted that the following embodiments are only intended to better illustrate the technical solution of the present application, and do not limit the protection scope of the present application.

[0067] In specific implementations, the second metal electrode layer is generally used to form the gate electrode of the TFT, and the first metal electrode layer is used to form the source and drain electrodes of the TFT, and the second metal electrode layer may be disposed between the first metal electrode layer and the semiconductor layer. Of course, in some embodiments, the second metal electrode layer may alternatively be disposed above the first metal electrode layer. This is not a limitation in the present application.

[0068] For example, an example in which the second metal electrode layer is disposed between the first metal electrode layer and the semiconductor layer will be used. Please continue to refer to Figures 9 and 10. The insulating layer 311 is disposed between the gate electrode 06 (i.e., the layer on which the second metal electrode layer is disposed) and the input electrode 01 (i.e., the layer on which the first metal electrode layer is disposed), and between the input electrode 01 and the channel region 03.

[0069] See Figure 11. The operating principle of the photosensor (also called a photodiode) provided in this application is as follows: in the absence of light, the reverse current in the channel region is very small (generally less than 0.1 microamperes), called dark current. In the presence of light, energy-carrying photons enter the channel region and transfer energy to bind electrons through covalent bonds, causing some electrons to break free from the covalent bonds and generate electron-hole pairs, called photogenerated carriers. Under a reverse voltage, the electron-hole pairs float, so the reverse current is obviously large. The higher the light intensity, the larger the reverse current. When the photosensor is operating, electron-hole pairs are mainly formed in the unblocked region (depletion region) of the channel region. The concentration of the formed electron-hole pairs varies depending on the intensity of the absorbed light. Figure 12 shows an equivalent circuit diagram. When light is irradiated, the stronger the light, the higher the concentration of electron-hole pairs, the smaller the equivalent resistance of the depletion region, and the larger the output current signal. The light intensity can be obtained by processing the output current signal.

[0070] The optical sensor in the present application is characterized by high sensitivity due to the large resistance of the depletion region and the small dark current (leakage current) especially when no light is irradiated. In addition, the dark current can be further adjusted by adjusting the potential of the gate electrode and the voltage difference between the input electrode and the output electrode.

[0071] The display panel provided in this application will be described in detail below with reference to the manufacturing method.

[0072] Example 1 See FIG. 13. The photosensor PD includes a channel region 03, a first doped region 04, a second doped region 05, and at least one gate electrode 06, which are arranged in the same layer as the input electrode 01, the output electrode 02, and the semiconductor layer 312. Of course, the gate electrode 06 may or may not be included. In FIG. 13, one gate electrode is used as an example for explanation. The input electrode 01 and the output electrode 02 are both arranged in the same layer as the first metal electrode layer 313, and the at least one gate electrode 06 is arranged in the same layer as the second metal electrode layer 314. The first doped region 04 may have the same material and doping concentration as the first P-type heavily doped region (P+), and the second doped region may be an N-type doped region (N+). The channel region 03 may have the same material and doping concentration as the first P-type lightly doped region (P-).

[0073] For the photosensor PD shown as an example in FIG. 13, the method for fabricating the photosensor PD may include the following steps.

[0074] In step S101, a semiconductor layer 312 is formed on a substrate 310, and a mask process is used to perform P-type optical doping on the semiconductor layer 312 to form a channel region T03 of the TFT and a channel region O3 of the photosensor PD.

[0075] The semiconductor layer may be made of semiconductor materials such as amorphous silicon / polycrystalline silicon / oxide, which is not limited here.

[0076] In step S102, a first insulating layer 311a and a second metal electrode layer 314 are sequentially formed, and a mask process is used to pattern the second metal electrode layer 314 to form a gate electrode T06 and a channel shield layer of the TFT. Using the gate electrode T06 and the channel shield layer of the TFT as a shield, P-type high concentration doping is performed on the semiconductor layer 312 to form electrode contact regions T04 and T05 of the TFT and the first doped region T04 of the photosensor PD.

[0077] In step S103, a mask process is used to pattern the channel shield layer to form the gate electrode 06 of the photosensor PD.

[0078] In step S104, a mask process is used to perform N-type doping on the semiconductor layer 312 to form the second doped region 05 of the photosensor PD.

[0079] In step S105, a second insulating layer 311b and a first metal electrode layer 313 are formed in sequence, and a mask process is used to pattern the first metal electrode layer 313 to form the source electrode T01 and the drain electrode T02 of the TFT, and the input electrode O1 and the output electrode O2 of the photosensor PD.

[0080] In the display panel, steps S103 and S104 need to be added to form the photosensitive device PD based on the original display panel process. Therefore, two mask processes need to be added. In the related art, four mask processes need to be added. In comparison, two mask processes can be eliminated in the present application, thereby reducing manufacturing costs.

[0081] Example 2 See FIG. 14. The photosensor PD includes a channel region 03, a first doped region 04, a second doped region 05, and at least one gate electrode 06, which are arranged in the same layer as the input electrode 01, the output electrode 02, and the semiconductor layer 312. Of course, the gate electrode 06 may or may not be included. In FIG. 14, one gate electrode is used as an example for explanation. The input electrode 01 and the output electrode 02 may both be arranged in the same layer as the first metal electrode layer 313, the at least one gate electrode 06 may be arranged in the same layer as the second metal electrode layer 314, and the first doped region 04 and the second doped region 05 may both have the same material and doping concentration as the first P-type heavily doped region (P+). The channel region 03 may be made of a semiconductor intrinsic material.

[0082] For the photosensor PD shown as an example in FIG. 14, the method for fabricating the photosensor PD may include the following steps.

[0083] In step S201, a semiconductor layer 312 is formed on a substrate 310, and a mask process is used to perform P-type photo-doping on the semiconductor layer 312 to form a channel region T03 of the TFT, and another mask process is used to form a semiconductor intrinsic material, i.e., a channel region T03 of the photosensor PD.

[0084] The semiconductor layer may be made of semiconductor materials such as amorphous silicon / polycrystalline silicon / oxide, which is not limited here.

[0085] In step S202, a first insulating layer 311a and a second metal electrode layer 314 are sequentially formed, and a mask process is used to pattern the second metal electrode layer 314 to form a gate electrode T06 and a channel shield layer of the TFT. Using the gate electrode T06 and the channel shield layer of the TFT as shields, P-type high concentration doping is performed on the semiconductor layer 312 to form electrode contact regions T04 and T05 of the TFT, and a first doped region O4 and a second doped region O5 of the photosensor PD.

[0086] In step S203, a mask process is used to pattern the channel shield layer to form the gate electrode 06 of the photosensor PD.

[0087] In step S204, a second insulating layer 311b and a first metal electrode layer 313 are formed in sequence, and a mask process is used to pattern the first metal electrode layer 313 to form the source electrode T01 and the drain electrode T02 of the TFT, and the input electrode O1 and the output electrode O2 of the photosensor PD.

[0088] In order to form the photosensitive device PD in the display panel, a mask process for forming the channel region O3 of the photosensor PD in step S201 and a mask process in step S204 need to be added based on the original display panel process. In the related art, four mask processes need to be added. In comparison, two mask processes can be eliminated in the present application, thereby reducing manufacturing costs.

[0089] Example 3 See FIG. 15. The photosensor PD includes a channel region 03, a first doped region 04, a second doped region 05, and at least one gate electrode 06, which are arranged in the same layer as the input electrode 01, the output electrode 02, and the semiconductor layer 312. Of course, the gate electrode 06 may or may not be included. In FIG. 15, one gate electrode is used as an example for explanation. The input electrode 01 and the output electrode 02 are both arranged in the same layer as the first metal electrode layer 313, the at least one gate electrode 06 is arranged in the same layer as the second metal electrode layer 314, and the first doped region 04 and the second doped region 05 both have the same material and doping concentration as the first P-type heavily doped region (P+). The channel region 03 may have the same material and doping concentration as the first P-type lightly doped region (P−).

[0090] For the photosensor PD shown as an example in FIG. 15, the method for fabricating the photosensor PD may include the following steps.

[0091] In step S301, a semiconductor layer 312 is formed on a substrate 310, and a mask process is used to perform P-type optical doping on the semiconductor layer 312 to form a channel region T03 of the TFT and a channel region O3 of the photosensor PD.

[0092] The semiconductor layer may be made of semiconductor materials such as amorphous silicon / polycrystalline silicon / oxide, which is not limited here.

[0093] In step S302, a first insulating layer 311a and a second metal electrode layer 314 are sequentially formed, and a mask process is used to pattern the second metal electrode layer 314 to form a gate electrode T06 and a channel shield layer of the TFT. Using the gate electrode T06 and the channel shield layer of the TFT as shields, P-type high concentration doping is performed on the semiconductor layer 312 to form electrode contact regions T04 and T05 of the TFT, and a first doped region O4 and a second doped region O5 of the photosensor PD.

[0094] In step S303, a mask process is used to pattern the channel shield layer to form the gate electrode 06 of the photosensor PD.

[0095] In step S304, a second insulating layer 311b and a first metal electrode layer 313 are sequentially formed, and a mask process is used to form the source electrode T01 and the drain electrode T02 of the TFT, and the input electrode O1 and the output electrode O2 of the photosensor PD. 313 The patterning is performed.

[0096] In the display panel, only step S303 needs to be added to form the photosensitive device PD based on the original display panel process. Therefore, one mask process needs to be added. In the related art, four mask processes need to be added. In comparison, three mask processes may be eliminated in the present application, thereby significantly reducing manufacturing costs. In addition, compared with the case where the channel region is made of a semiconductor intrinsic material, the channel region of the photosensor is a P-type lightly doped region, so the impedance of the channel region may be reduced, thereby improving the photosensitive current and photosensitive efficiency of the photosensor.

[0097] The external quantum efficiency (EQE) of the photosensor of the display panel in the above three embodiments and the EQE of the photosensor with a PIN structure provided in the related art are measured separately. EQE refers to an accurate measurement of the light sensitivity of the device. Table 1 shows the measurement results.

[0098] [Table 1]

[0099] From Table 1, it can be seen that the EQE of the photosensor in the embodiments of the present application is generally higher than that of the photosensor in the related art, and the EQE of the photosensor in Example 3 can be increased by more than 20% by adjusting the potential at the gate electrode.

[0100] In practical application, the light sensor of the display panel provided in the embodiments of the present application can be configured to detect the intensity of ambient light, or the intensity of light of a specific wavelength (red light / green light / blue light / infrared light / ultraviolet light) to perform some specific functions. For example, the screen brightness can be adjusted by detecting ambient light. Figure 16 illustrates the adjustment principle. The light sensor senses the light intensity of the surrounding environment, converts the light signal into an electrical signal, and outputs the electrical signal. The IC processes the output electrical signal, converts the current analog signal into a digital signal, and then reports the digital signal. The digital signal is processed using an algorithm and then multiplied by a corresponding coefficient to obtain a brightness value. The brightness value corresponds to the dimming level of the screen. Whether the screen needs to be dimmed is determined by judgment. If dimming is needed, the driver chip outputs a corresponding driving current to adjust the brightness of the display screen.

[0101] See Figures 17 and 18. In a specific implementation, the display panel 30 may include a display area A1 and a non-display area A2. Pixels (not shown) for the display are disposed in the display area A1, and driver circuits and traces (not shown) are generally disposed in the non-display area A2. The photosensor PD may be disposed in the display area A1 or the non-display area A2. This is not a limitation here. When the photosensor PD is disposed in the non-display area A2, the photosensor PD may be disposed at a position within the non-display area A2 where there is no driver circuit. This is not a limitation here.

[0102] In specific implementation, the display substrate may include a plurality of light sensors PD, and the plurality of light sensors PD may all be arranged in the non-display area A2 as shown in Fig. 17, or the plurality of light sensors PD may all be arranged in the display area A1 as shown in Fig. 18, or, naturally, some of the plurality of light sensors PD may be arranged in the non-display area A2 and the other part of the light sensors PD may be arranged in the display area A1. This is not limited here.

[0103] In practical applications, in the present application, multiple optical sensors arranged in a matrix may be disposed in the display area, and the touch function may be implemented by detecting the light intensity of each optical sensor. Alternatively, multiple optical sensors may be disposed in the fingerprint recognition area, and the fingerprint recognition function may be implemented by detecting the relative light intensity between the fingerprint valleys and ridges at the fingerprint touch position. Alternatively, as shown in FIG. 19, at least one optical sensor PD may be disposed on each side of the display panel 30. In the figure, the left side L and the right side R are used as examples. The gesture recognition function may be implemented by detecting the time series of the output signals of the optical sensors PD on both sides. FIG. 20 shows the time series of the output signals of the optical sensors PD on both sides. In FIG. 20, L represents the output signal of the left optical sensor PD, and R represents the output signal of the right optical sensor PD. When the output signal of the left optical sensor PD becomes small and then the output signal of the right optical sensor PD becomes small, the left optical sensor PD is blocked, and then the right optical sensor PD is blocked, resulting in a gesture from left to right.

[0104] FIG. 21 is a schematic diagram of a cross-sectional structure of a display module according to an embodiment of the present application. Please refer to FIG. 21. The display module 100 provided in the embodiment of the present application may include a display panel 30, a polarizer 110, and a cover layer 120, which are stacked in order. The display panel 30 may be any one of the display panels described above, as provided in the embodiment of the present application. Compared with display panels provided in the related art, the cost of the display panel 30 provided in the embodiment of the present application may be reduced. Therefore, the cost of the display module provided in the embodiment of the present application may also be reduced.

[0105] For example, in a specific implementation, as shown in Figure 21, the cover layer 120 may be bonded to the polarizer 110 using an optically clear adhesive 130, although this is not limiting herein.

[0106] Please refer to FIGS. 22 to 25. FIG. 22 is a schematic diagram of a top structure of a display module according to an embodiment of the present application. FIG. 23 is a schematic diagram of a cross-sectional structure of the display module, shown along the AA′ direction in FIG. 22. FIG. 24 is a schematic diagram of a cross-sectional structure of the display module, shown along the BB′ direction in FIG. 22. FIG. 25 is a schematic diagram of another cross-sectional structure of the display module, shown along the BB′ direction in FIG. 22. In the display module 100, the display panel 30 has a display area A1 and a non-display area A2. A plurality of photosensors PD are disposed in the non-display area A2 of the display panel 30. The display module 100 further includes a light-blocking ink layer 140 and at least one light filter film disposed between the display panel 30 and the cover layer 120. Optionally, the at least one light filter film may include at least one yellow light filter film Y, at least one cyan light filter film C, and at least one magenta light filter film M. The orthogonal projection of the light-shielding ink layer 140 on the display panel 30 covers the non-display area A2, and the orthogonal projection of each of the light filter films Y, C, and M on the display panel 30 is disposed within the non-display area A2. Each light filter film may correspond to at least one light sensor PD. For example, in FIGS. 24 and 25, each yellow light filter film Y may correspond to at least one light sensor PD, each cyan light filter film C may correspond to at least one light sensor PD, and each magenta light filter film M may correspond to at least one light sensor PD. In FIGS. 24 and 25, an example in which one light filter film corresponds to one light sensor is used for explanation.

[0107] The light-shielding ink layer 140 is used to shield the non-display area A2 of the display panel 30. The light-shielding ink layer 140 has at least one first opening V1 and at least one second opening corresponding to each light filter film, for example, at least one second opening V2 corresponding to each yellow light filter film Y, at least one second opening V2 corresponding to each cyan light filter film C, and at least one second opening V2 corresponding to each magenta light filter film M. Each first opening V1 may correspond to at least one light sensor PD.

[0108] 24 , the orthogonal projection of the light filter films Y, C, and M onto the display panel 30 covers the orthogonal projection of at least one second opening V2 corresponding to the light filter film onto the display panel 30. For example, the orthogonal projection of the yellow light filter film Y onto the display panel 30 covers the orthogonal projection of the at least one second opening V2 corresponding to the yellow light filter film Y onto the display panel 30, the orthogonal projection of the cyan light filter film C onto the display panel 30 covers the orthogonal projection of the at least one second opening V2 corresponding to the cyan light filter film C onto the display panel 30, and the orthogonal projection of the magenta light filter film M onto the display panel 30 covers the orthogonal projection of the at least one second opening V2 corresponding to the magenta light filter film M onto the display panel 30. In addition, the orthogonal projection of the light filter films Y, C, and M onto the display panel 30 does not overlap with the orthogonal projection of the first opening V1 onto the display panel 30. Here, “does not overlap” means that the two regions do not have an overlapping region.

[0109] In specific implementation, the optical filter films Y, C, and M and the light-shielding ink layer 140 may be arranged on the same layer as shown in Fig. 25. Of course, the optical filter films Y, C, and M and the light-shielding ink layer 140 may be arranged on different layers as shown in Fig. 24. This is not a limitation here.

[0110] See Figures 24 and 25. For example, any four optical sensors PD may be used as a group of detection units P100, and at least one group of detection units P100 may be disposed in the non-display area A2. In each group of detection units P100, one optical sensor PD corresponds to one first opening V1, and the other three optical sensors PD correspond to three second openings V2, which correspond to one yellow optical filter film Y, one magenta optical filter film M, and one cyan optical filter film C, respectively. The yellow optical filter film Y can transmit yellow light, the magenta optical filter film M can transmit magenta light, and the cyan optical filter film C can transmit cyan light. Figure 26 is a curve diagram of the transmittance and wavelength of three types of optical filter films. Therefore, the intensity values ​​of B (blue light), G (green light), R (red light), and NIR (infrared light) in the ambient light may be calculated by detecting the intensities of yellow light, cyan light, magenta light, and white light (i.e., light passing through the first opening V1) in the ambient light. The calculation formula may be as follows: B=WY (1) G=WM (2) R=WC (3) I=nY+M+Cn-2W =nG+R+In+nB+R+In+nB+G+In-2×nB+G+R+In (4)

[0111] In the above equations (1) to (4), B represents the intensity of blue light, G represents the intensity of green light, R represents the intensity of red light, W represents the intensity of white light, Y represents the intensity of yellow light, M represents the intensity of magenta light, C represents the intensity of cyan light, and I represents the intensity of infrared light.

[0112] In addition, the function of detecting the color temperature of the environment may be further implemented using the intensity values ​​of B (blue light), G (green light), and R (red light). The formula for calculating the chroma value x and the chroma value y of the ambient light can satisfy the following formula:

number

[0113] In equation (7), L1(λ) represents the intensity value of red light, R(λ) represents the wavelength of red light, and EQE1(λ) represents the EQE of red light. In equation (8), L2(λ) represents the intensity value of green light, G(λ) represents the wavelength of green light, and EQE2(λ) represents the EQE of green light. In equation (9), L3(λ) represents the intensity value of blue light, B(λ) represents the wavelength of blue light, and EQE3(λ) represents the EQE of blue light.

[0114] Table 2 shows the ratio of low-illuminance detection capability between the calculated values ​​of intensity values ​​of B (blue light), G (green light), and R (red light) in ambient light by detecting the intensities of yellow light, cyan light, magenta light, and white light in ambient light in this application and the direct detection of intensity values ​​of B (blue light), G (green light), and R (red light) in ambient light.

[0115] [Table 2]

[0116] In Table 2, CMY represents the data without an infrared light filter film, and RGB* represents the data with an infrared light filter film in the prior art. From the table above, it can be seen that the low illuminance detection capability of the present application can be increased by more than two times. Therefore, in the present application, C / M / Y is used to replace R / G / B as the measurement channel for the color temperature of the environment, so that the amount of light entering the light sensor can be increased by more than two times, thereby improving the display module in low illuminance. Integrated light sensor Improved sensing ability.

[0117] In addition, in this application, since C / M / Y is used to replace R / G / B as the measurement channel of the environment color temperature, there is no need to manufacture an infrared light channel, the number of light sensors and the number of analog-to-digital conversion channels on the chip can be reduced, and the process of manufacturing an infrared light filter film is not required, thereby reducing the complexity and cost of manufacturing the display module.

[0118] See Figure 27. Optionally, the display module 100 may further include a first quarter-wave retardation layer 150 and a second quarter-wave retardation layer 160, respectively, disposed on either side of the polarizer 110. When external ambient light OP1 passes through the polarizer 110 and becomes linearly polarized light, the linearly polarized light must be reflected by the backplane of the display panel 30, then irradiated onto the polarizer 110, and pass through the second quarter-wave retardation layer 160 twice, so that the polarization direction of the linearly polarized light is perpendicular to the polarization direction of the polarizer 110, and the reflected linearly polarized light cannot pass through the polarizer 110, thereby reducing the reflectivity of the display module. Similarly, the light OP2 emitted by the display panel 30 is converted into linearly polarized light by the polarizer 110, and the light OP3 reflected by an object (such as a face) also needs to pass through the first quarter-wave retardation layer 150 twice, so the polarization direction of the linearly polarized light is perpendicular to the polarization direction of the polarizer 110, and the reflected linearly polarized light cannot pass through the polarizer 110. This prevents the light emitted by the display panel 30 from irradiating the light sensor PD after being reflected by the object, resulting in a measurement error because the measured value deviates from the actual environment.

[0119] Furthermore, when the environment detected by the display module changes from a pure black environment to an environment with an illuminance of 0.2 Lx, the output signal of the light sensor may change significantly. Therefore, the display module may increase its low-illuminance detection capability to 0.2 Lx.

[0120] See Figure 28. For example, the display module may further include a touch layer 170 disposed between the display panel 30 and the cover layer 120. In a specific implementation, the touch layer 170 may be disposed between the display panel 30 and the polarizer 110, but this is not limited thereto.

[0121] The present application further provides an electronic device including any one of the above-mentioned display modules provided in the embodiments of the present application. The solution principle of the electronic device is the same as that of one of the above-mentioned display modules. Therefore, for the implementation of the electronic device, please refer to the implementation of the above-mentioned display module, and the details will not be repeated.

[0122] Specifically, the electronic device of the present application can detect the lighting conditions of the current environment using an optical sensor integrated into the display panel, adjust the screen brightness of the display panel to make it comfortable and not dazzling to the human eye, and reduce the power consumption of the display screen. For example, the electronic device can be a mobile phone as shown in FIG. 3, or a tablet, portable computer, display, television, etc. as shown in FIG. 4. The electronic device can further detect light of specific wavelengths (e.g., red light / green light / blue light / infrared light / ultraviolet light) using the optical sensor integrated into the display panel to implement more functions and applications, such as color temperature detection, proximity light detection, and ultraviolet intensity detection. For example, the mobile phone, tablet, or watch, computer, monitor screen, or television shown in FIG. 5 can detect light of specific wavelengths (e.g., ultraviolet light / infrared light) in external ambient light to implement specific functions. For example, infrared sensing can be used for proximity detection, and ultraviolet sensing can be used to implement a UV index sensor.

[0123] It is obvious that those skilled in the art can make various modifications and variations to this application without departing from the scope of this application. This application is intended to cover these modifications and variations of this application, provided that they fall within the scope of protection defined by the appended claims and their equivalent technologies. [Explanation of symbols]

[0124] 1 board 2 Metal electrode 3 Metal electrode 4 gate electrode 10 LCD panels 11 Circuit Board 12 Circuit membrane layer 13 Pixel electrode layer 14 Lower alignment layer 15 Liquid crystal layer 16 Upper alignment layer 17 Common electrode layer 18 color filter layers 19 Opposing substrate 20 AMOLED display panels 21 PCB 22 Circuit membrane layer 23 Anode layer 24 pixel limit layer 25 Light-emitting layer 26 cathode layer 27 Opposing substrate 30 Display Panel 31 Display board 32 Opposing substrate 100 Display Module 110 Polarizer 120 cover layer 121 Semiconductor layer 122 first insulating layer 123 gate electrode 124 Second insulating layer 125 Source Electrode 126 Drain electrode 130 Adhesive 140 Light-shielding ink layer 150 first quarter wave retardation layer 160 second quarter wave retardation layer 170 Touch Layer 221 Semiconductor layer 222 First insulating layer 223 Gate electrode 224 Second insulating layer 225 Source Electrode 226 Drain electrode 310 Substrate 311 Insulating layer 311a first insulating layer 311b Second insulating layer 312 Semiconductor layer 313 First metal electrode layer 314 Second metal electrode layer 01 Input electrode 02 Output electrode 03 Channel Region 04 First doped region 05 Second doped region 06 Gate electrode A1 display area A2 Non-display area OP1 External ambient light OP2 Hikari OP3 Light P100 Detection Unit PD light sensor T01 Source electrode T02 Drain electrode T03 Channel region T04 Electrode contact area T05 Electrode contact area T06 Gate electrode V1 First opening V2 Second opening

Claims

1. A display module including a display panel, a polarizer, and a cover layer stacked in order, wherein the display panel includes a display substrate and an opposing substrate arranged opposite each other; the display substrate includes a substrate, a display functional film layer disposed on the substrate, and at least one light sensor; the display functional film layer includes at least a semiconductor layer and a plurality of metal electrode layers stacked together, the semiconductor layer having a first P-type lightly doped region and a first P-type heavily doped region; the photosensor includes an input electrode, an output electrode, and a channel region, a first doped region, and a second doped region disposed in the same layer as the semiconductor layer; the first doped region and the second doped region are disposed on opposite sides of the channel region, respectively, the input electrode is electrically connected to the first doped region, and the output electrode is electrically connected to the second doped region; the first doped region, or the second doped region, or both, have the same material and doping concentration as the first P-type heavily doped region; the channel region is made of an intrinsic semiconductor material; the input electrode and the output electrode are each disposed on the same layer as at least one of the plurality of metal electrode layers; the display panel having a display area and a non-display area, and a plurality of light sensors disposed in the non-display area of ​​the display panel; the display module further includes a light-blocking ink layer disposed between the display panel and the cover layer, and at least one light filter film; The orthogonal projection of the light-blocking ink layer onto the display panel covers the non-display area, and the orthogonal projection of each light filter film onto the display panel is disposed within the non-display area, and each light filter film corresponds to at least one light sensor; the light-blocking ink layer has at least one first opening and at least one second opening corresponding to each optical filter film, and each of the first openings corresponds to at least one optical sensor; A display module wherein an orthogonal projection of the light filter film onto the display panel covers an orthogonal projection of the at least one second opening corresponding to the light filter film onto the display panel, and the orthogonal projection of the light filter film onto the display panel does not overlap with an orthogonal projection of the first opening onto the display panel.

2. 10. The display module of claim 1, wherein the at least one light filter film comprises at least one yellow light filter film, at least one cyan light filter film, and at least one magenta light filter film.

3. The display module according to claim 1 , wherein the light filter film is disposed in the same layer as the light-blocking ink layer.

4. 4. The display module of claim 1, further comprising a first quarter-wave retardation layer and a second quarter-wave retardation layer disposed on either side of the polarizer, respectively.

5. The display module of claim 1 , further comprising a touch layer disposed between the display panel and the cover layer.

6. when the first doped region has the same material and the same doping concentration as the first heavily doped P-type region, the second doped region is an N-type doped region; or 6. A display module as claimed in any one of claims 1 to 5, wherein the first doped region is an N-type doped region when the second doped region has the same material and the same doping concentration as the first P-type highly doped region.

7. 7. A display module according to claim 1, wherein the light sensor further includes at least one gate electrode arranged in the same layer as one of the plurality of metal electrode layers, and a positive projection of the at least one gate electrode within the channel region partially overlaps with the channel region.

8. 8. The display module of claim 7, wherein the light sensor includes one gate electrode, the gate electrode being disposed closer to the output electrode.

9. the display panel having a display area and a non-display area, the display substrate including a plurality of photosensors; the plurality of light sensors are disposed in the non-display area; or the plurality of light sensors are disposed in the display area; or The display module of claim 1 , wherein some of the plurality of light sensors are disposed in the non-display area and other parts of the light sensors are disposed in the display area.

10. An electronic device comprising a display module according to any one of claims 1 to 9.

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