Chamber ionizer for reducing electrostatic discharge - Patent application

Abstract

An exemplary substrate processing system may include a chamber including a body. The body may have one or more sidewalls. The one or more sidewalls may define an opening. The body may define an interior region. A plurality of substrate support pins may be disposed within the interior region. A plurality of ionizers may be coupled to one or more of the sidewalls of the body. A light source of each of the plurality of ionizers may be oriented toward an opening defined in the one or more sidewalls.

Description

[Technical Field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS This application claims the benefit of and priority to U.S. Patent Application No. 63 / 307,495, filed February 7, 2022, and entitled "CHAMBER IONIZER FOR REDUCING ELECTROSTATIC DISCHARGE," which is incorporated herein by reference in its entirety.

[0002] This technology relates to components and apparatus for the manufacture of glass and semiconductor substrates. More particularly, this technology relates to vacuum chamber parts that reduce electrostatic discharge. [Background technology]

[0003] Liquid crystal displays or flat panels are commonly used for active matrix displays such as computer, television, and other monitors. Plasma-enhanced chemical vapor deposition (PECVD) is used to deposit thin films on substrates, such as semiconductor wafers or transparent substrates for flat panel displays. PECVD is generally achieved by introducing a precursor gas or gas mixture into a vacuum chamber containing the substrate. The precursor gas or gas mixture is typically directed downward through a distribution plate located near the top of the processing chamber. The precursor gas or gas mixture in the processing chamber is energized (e.g., excited) into a plasma by applying power, such as radio frequency (RF) power, to electrodes in the processing chamber from one or more power supplies coupled to the electrodes. The excited gas or gas mixture reacts to form a material layer on the surface of the substrate. This layer can be, for example, a passivation layer, a gate insulator, a buffer layer, and / or an etch stop layer. This layer can be part of a larger structure, such as a thin film transistor (TFT) or active matrix organic light-emitting diode (AMOLED) used in a display device. During deposition, the substrate is moved between various chambers in the system, such as by a robotic arm.

[0004] Flat panels processed by PECVD techniques are typically large and delicate to handle. For example, a flat panel may exceed 4 cubic meters. Before and during processing operations, a robotic arm may periodically lift and transfer the substrate to various stations in the processing system. Interactions between the substrate and various transfer and chamber components can generate positive and negative charges. The different charges can lead to electrostatic discharges. Such electrostatic discharges can cause a variety of problems that can reduce substrate quality.

[0005] Therefore, there is a need for improved systems and methods for reducing the charge that leads to electrostatic discharge during substrate transfer operations.These and other needs are addressed by the present technique. Summary of the Invention

[0006] An exemplary substrate processing system may include a chamber including a body having one or more sidewalls. The one or more sidewalls may define an opening. The body may define an interior region. A plurality of substrate support pins may be disposed within the interior region. A plurality of ionizers may be coupled to one or more of the sidewalls of the body. A light source of each of the plurality of ionizers may be directed toward the opening defined in the one or more sidewalls.

[0007] In some embodiments, one or more sidewalls can define multiple viewports. The multiple ionizers can be coupled to the body through the multiple viewports. The radiation fields emitted by the light sources of each of the multiple ionizers can overlap. Each of the multiple ionizers can be coupled to the body such that the longitudinal axis of the respective light source is at an angle of about 40° to about 70° with respect to a longitudinal axis extending through the opening and bisecting the body. The radiation fields generated by the light sources of each of the multiple ionizers can collectively cover the entire width of the chamber opening. The multiple ionizers can produce positive and negative ions even in the absence of air. The multiple ionizers can be or include vacuum ultraviolet ionizers. The substrate processing system can include multiple chambers and a robot arm connecting the multiple chambers. Each of the multiple ionizers can include a body having a chamber opening, a viewport opening, and an ionizer opening. A plane extending entirely through the ionizer opening can be inclined with respect to a plane extending entirely through the chamber opening. A light source for each ionizer can be coupled to an ionizer aperture.

[0008] Some embodiments of the present technology may include a chamber ionizer. An exemplary chamber ionizer may include a body having a chamber opening, a viewport opening, and an ionizer opening. A plane extending entirely through the ionizer opening may be tilted relative to a plane extending entirely through the chamber opening. An ionizer housing including a light source may be coupled to the ionizer opening. A longitudinal axis of the light source may be aligned with the ionizer opening. The light source may be oriented toward the chamber opening of the body.

[0009] In some embodiments, the body can include a flange proximate the chamber opening. The flange can define a plurality of apertures connectable to the chamber for transferring substrates. The ionizer housing can be connected to the body such that the longitudinal axis of the light source is at an angle of about 40° to about 70° with respect to a plane extending entirely through the viewport opening. The chamber opening and the viewport opening can be substantially the same shape. The light source can be a vacuum ultraviolet photoionizer. The chamber opening can be defined in a first plane of the body. The viewport opening can be defined in a second plane of the body. The first plane and the second plane can be substantially parallel.

[0010] Some embodiments of the present technology may include substrate transfer methods. These methods may include engaging a substrate using a robot arm. These methods may include moving the substrate into the chamber through openings in one or more sidewalls of the chamber's body. The body may define an interior region. These methods may include directing vacuum ultraviolet light toward the opening in one of the sidewalls of the chamber's body to form positive and negative ions that react with charged material on the substrate as the substrate is moved into the chamber. The vacuum ultraviolet light may neutralize charge buildup on the substrate. These methods may include positioning the substrate on a plurality of substrate support pins disposed in the interior region. These methods may include decoupling the robot arm from the substrate. The ultraviolet light may reduce electrostatic discharge when the robot arm is decoupled.

[0011] In some embodiments, the vacuum ultraviolet light can be directed toward the opening in the body without airflow. The vacuum ultraviolet light can reduce electrostatic discharge on the substrate, the chamber, the robot arm, the plurality of substrate support pins, or a combination thereof. The vacuum ultraviolet light can extend across the entire width, top surface, and bottom surface of the substrate as it is moved into the chamber.

[0012] Such technology can provide numerous benefits over conventional systems and techniques. For example, embodiments of the present technology can utilize multiple ionizers, thereby reducing the buildup of positive and negative charges on substrates, chamber parts, and / or transfer components before, during, and / or after processing. For example, embodiments can use ionizers that can generate positive and negative ions that can combine with static charges on the substrate to neutralize such charges. These and other embodiments, along with many of their advantages and features, are described in more detail in the following description and in conjunction with the accompanying figures.

[0013] A further understanding of the nature and advantages of the disclosed technology may be realized by reference to the remaining portions of the specification and the drawings. [Brief explanation of the drawings]

[0014] [Figure 1] FIG. 1 illustrates a top view of an exemplary processing system in accordance with some embodiments of the present technique. [Figure 2A] 1 is a schematic side view of an exemplary processing system in accordance with some embodiments of the present technique; [Figure 2B] FIG. 2B is a top view of the processing system of FIG. 2A. [Figure 2C] 2B is a partial cross-sectional side view of the processing system of FIG. 2A. [Figure 3A] FIG. 1 is a front view of an exemplary chamber ionization apparatus in accordance with some embodiments of the present technique. [Figure 3B] FIG. 3B is an isometric view of the chamber ionizer of FIG. 3A. [Figure 4] 1A-1C illustrate operations of an exemplary substrate transfer method in accordance with some embodiments of the present technique. DETAILED DESCRIPTION OF THE INVENTION

[0015] Some of these figures are included as schematic diagrams. It is understood that these figures are for illustrative purposes and should not be considered to scale unless specifically stated to be to scale. Additionally, as schematic diagrams, these figures are provided to aid in understanding and may not include all aspects or information compared to realistic representations and may include exaggerated material for illustrative purposes.

[0016] In the accompanying figures, similar components and / or features may have the same reference label. Furthermore, various components of the same type may be distinguished by a letter following the reference label that distinguishes the similar components. When only a first reference label is used in this specification, the description is applicable to any of the similar components having the same first reference label, regardless of its letter.

[0017] During and / or between processing operations, e.g., during transfer of a substrate between transfer components and chamber parts, electrostatic charges may be generated that may accumulate on chamber parts, transfer components, and / or substrates. For example, positive charges may accumulate on the surface of a substrate, and negative charges may accumulate on the chamber and / or transfer components. Electrostatic discharge can occur when a positively charged component or substrate comes into contact with a negatively charged component or substrate. Electrostatic discharge is unavoidable due to the presence of positive and negative charges that may form during and / or before processing and / or transfer operations. Electrostatic discharge can result in the formation of defects on the substrate and / or in the final device.

[0018] The present technology overcomes these challenges by utilizing an ionizer that reduces or eliminates the presence of charge on the substrate during and / or before processing, particularly during transfer operations. For example, the ionizer can neutralize charge before electrostatic discharge occurs. The ionizer can remove electrons from some or all atoms and / or molecules (e.g., gases) in proximity to the substrate, thereby forming positive ions. Some or all of the ejected electrons can combine with stable atoms and / or molecules to form negative ions. The resulting positive and negative ions (or the ejected electrons themselves) can accumulate and combine with electrostatic charges formed on chamber parts, transfer components, and / or the substrate, neutralizing the electrostatic charges. Neutralizing electrostatic charges on chamber parts, transfer components, and / or the substrate can reduce the likelihood of electrostatic discharge. Reducing electrostatic discharge can reduce the likelihood of defects forming on the substrate and / or in the final device. Furthermore, the ionizer can operate without the introduction of gas (e.g., in a vacuum environment), thereby avoiding the risk of contamination of the substrate during transfer operations. Accordingly, the present technique can reduce static charge and therefore electrostatic discharge, thereby improving the quality of the processed substrate.

[0019] While the remainder of the disclosure will generally identify specific deposition processes that utilize the disclosed technology, it will be readily understood that the systems and methods are equally applicable to other deposition and cleaning chambers and processes that may occur within the described chambers. Accordingly, the present technology should not be considered limited to use solely with these specific deposition processes or chambers. This disclosure will discuss one possible system and chamber that may include lid stack components according to embodiments of the present technology, and will then describe additional variations and adjustments to this system according to embodiments of the present technology.

[0020] FIG. 1 shows a top view of a processing system 150. The processing system 150 can be suitable for processing large-area substrates (e.g., substrates having a planar area greater than about 4 cubic meters). For example, the processing system 150 can be used to process one or more substrates, including semiconductor substrates, flat panel display substrates, and / or solar panel substrates, among others. The processing system 150 can include a transfer chamber 108 coupled to a factory interface 112 by a load lock chamber 100 having multiple single substrate transfer chambers. For example, the load lock chamber 100 can include two or more vertically stacked substrate transfer chambers. The sidewalls of each substrate transfer chamber can include at least one port disposed therethrough to facilitate controlling the pressure of the interior volume of each chamber. For example, each transfer chamber can include vent ports and vacuum ports (not shown) formed in one or more of the sidewalls for venting and pumping down the pressure of gases within the respective transfer chamber. Valves (not shown) can be coupled to the vent ports and / or vacuum ports to selectively prevent flow through the vent ports and / or vacuum ports. The vacuum port can be coupled to a vacuum pump (not shown) that is utilized to selectively reduce the pressure of the interior volume of the first substrate transfer chamber to a level that substantially matches the pressure of the transfer chamber 108. The transfer chamber 108 can include at least one robot arm 134, such as a dual-blade vacuum robot arm. The at least one robot arm 134 can transfer substrates between the load lock chamber 100 and the multiple, cycling process chambers 132. While shown with five processing chambers and a single load lock chamber 100 (or a single location with vertically stacked load lock chambers), it will be understood that in various embodiments, any number of processing chambers 132 and load lock chambers 100 can be positioned about the transfer chamber 108.The processing chambers 132 may include one or more system components for depositing, annealing, curing, and / or etching films on a substrate, and / or otherwise processing the substrate. In one configuration, some of the processing chambers 132 may be used to deposit material on a substrate, while the remaining processing chambers 132 may be used to etch the deposited material. In another configuration, all of the processing chambers 132 may be configured to deposit a stack of alternating material layers on a substrate. Any one or more of the described processes may be performed in chambers separate from the fabrication system shown in various embodiments. It will be understood that additional configurations of deposition, etching, annealing, and curing chambers for dielectric films are also contemplated by the processing system 150.

[0021] In another configuration, one of the process chambers 132 can be a preheat chamber that can thermally condition a substrate before processing to increase the throughput of the processing system 150. Typically, the transfer chamber 108 can be maintained at vacuum conditions to eliminate the need to adjust the pressure between the transfer chamber 108 and each individual process chamber 132 after each substrate transfer.

[0022] The factory interface 112 may generally include a plurality of substrate storage cassettes 138 and a dual-blade atmospheric robot 136. The cassettes 138 may generally be removably positioned in a plurality of compartments 140 formed on one side of the factory interface 112. The atmospheric robot arm 136 may be adapted to transfer substrates 110 between the cassettes 138 and the load lock chamber 100. Typically, the factory interface 112 may be maintained at atmospheric pressure or slightly above atmospheric pressure.

[0023] 2A shows a schematic side view of an exemplary processing system 200 in accordance with some embodiments of the present technique. The processing system 200 can include one or more chambers 201, each of which can be similar to chamber 100. For example, each chamber 201 can be a load lock chamber, although in various embodiments, the chambers can also be other types of vacuum chambers. The chambers 201 can include any of the features described in connection with chamber 100. The chambers 201 can include a body 203. The body 203 can have one or more sidewalls 202. For example, the chamber 201 can be circular and have one sidewall 202, or the chamber 201 can be polygonal and have multiple sidewalls 202. Each sidewall 202 can be generally linear and / or include one or more curved portions. As shown, the body 203 can be generally rectangular and include four generally straight sidewalls 202.

[0024] 2B illustrates a top view of an exemplary processing system 200. As shown in FIG. 2B, at least one of the sidewalls 202 can define one or more openings 208 that allow substrates to be transferred into and out of the chamber 201. For example, in some embodiments, the chamber 201 can include two openings on opposite sides of the chamber 201. In embodiments in which the chamber 201 is a load lock chamber, the one or more openings 208 can allow substrates to be transferred between the chamber 201 and a factory interface, such as the factory interface 112, and / or between the chamber 201 and a transfer chamber, such as the transfer chamber 108. While shown with openings 208 extending through a single sidewall 202, it will be understood that in some embodiments, each opening 208 can extend through multiple sidewalls. Each opening 208 can allow substrates to be passed into and out of the chamber 201 via a robot arm 270, which can be the same as the robot arm 134 or 136. The body 203 can define an interior region in which a substrate can be positioned during transfer or for various processing operations. For example, the interior region can include some or all of the volume defined between the sidewalls 202, the top 204 of the body 203 (which can be formed from one or more lid stack components), and the bottom 206 of the body 203. While discussed as a chamber body 203 having a top, bottom, and sidewalls, it is understood that in some embodiments the chamber can be oriented in different configurations, and directional references refer to the chamber orientation shown in the figures. A robot arm 270 can pass a substrate through the opening 208 into the interior region before one or more operations are performed on the substrate. As just one example, in which the chamber 201 is a load lock chamber, a substrate can be placed into the interior region and supported on one or more supports, such as support pins, while air is evacuated from the chamber 201 to selectively reduce the pressure of the interior volume of the chamber 201 to a level substantially matching the pressure of a transfer chamber, such as the transfer chamber 108; in various embodiments, the transfer chamber 108 can be maintained in a vacuum environment.The robot arm 270 can also remove the substrate from the interior region through the opening 208 after completing the operation. Referring again to FIG. 2A , at least one sidewall 202 can also define one or more viewports 216. Each viewport 216 can allow a user to visually inspect the interior region during operation. In some embodiments, a single viewport 216 can be provided for a given chamber, while in other embodiments, multiple viewports 216 can be provided. By way of example only, two or more viewports 216 can be provided on either side of the chamber body 203. As shown in FIG. 2B , opposing sidewalls 202 adjacent to the sidewall 202 defining one or more openings 208 can each include a viewport 216. The viewports 216 can be aligned with one another, or in other embodiments, the viewports 216 can be offset from one another along the height and / or length of the chamber body 203. Although two chambers 201 are shown, one stacked on top of the other, it is contemplated that the substrate processing system 200 may include any number of chambers 201 and that one or more robot arms 270 may be used to transfer substrates in and out of the various chambers 201.

[0025] FIG. 2C illustrates a partial cross-sectional view of an interior region of the chamber 201 of the exemplary processing system 200. As illustrated in FIG. 2C, a substrate support can be disposed within the interior region. The substrate support can be formed from and / or include a plurality of substrate support pins 238. For example, when the chamber 201 is a load lock chamber, the substrate support pins 238 can be fixed, and the substrate support pins 238 can comprise the entire substrate receiving surface. The substrate support pins 238 can receive the substrate 240 from one or more end effectors 272 of a robot arm 270. The end effectors can be and / or include a vacuum to grip the substrate 240. As shown, the robot arm 270 can engage the substrate 240 from the bottom surface of the substrate 240. However, it is also contemplated that the robot arm 270 can engage the substrate 240 from the top and / or side of the substrate 240. As described further below, during and / or after processing, differences in charge between chamber parts (such as substrate support pins 238 and robot arm 270) and substrate 240 can result in electrostatic discharge on the substrate 240, chamber parts, and / or transfer robot. As described further below, one or more chamber ionizers can neutralize the static charge on the chamber parts and substrate 240, thereby reducing electrostatic discharge.

[0026] 2A and 2B, the substrate processing system 200 can include multiple ionizers 220. Each ionizer 220 can be coupled to one or more of the sidewalls 202 of the body 203. Each ionizer 220 can include a light source that emits an ionizing radiation field, such as vacuum ultraviolet (VUV) radiation. The chamber 201 can include two ionizers, three ionizers, four ionizers, five ionizers, or more. In some embodiments, the ionizers 220 can be coupled to the sidewalls 202 on either side of the chamber's longitudinal axis L. The longitudinal axis L can extend through an opening 208 and bisect the chamber body 203. As shown, the ionizers 220 can be coupled to the body 203 through a viewport 216 defined in and / or coupled to the sidewalls 202 of the body 203. For example, the ionizer 220 may be coupled to and / or associated with an exterior surface of the viewport 216. It is contemplated that the ionizer 220 may be coupled to the body 203 via alternative locations. In some embodiments, the ionizer 220 may be coupled directly to the sidewall 202 rather than coupled to the sidewall 202 via the viewport 216 or other component. To reduce electrostatic discharge, the ionizer 220, and particularly the light source of the ionizer 220, may be directed toward one of the one or more openings 208 defined in the one or more sidewalls 202. In embodiments, the multiple ionizers 220 may be or include VUV ionizers.

[0027] The ionizers 220 can emit a radiation field 224 or ion field via their respective light sources. The radiation field 224 can be any shape, such as a cone. The ionizers 220 can be oriented to provide a radiation field 224 that completely covers the substrate when it enters the interior region through the opening 208. That is, the radiation fields 224 emitted by the light sources of the ionizers 220 can collectively and / or individually cover the entire width of each opening 208 of the chamber 201. The radiation fields 224 can be three-dimensional and can expand outward as the distance from the ionizers 220 increases. For example, the expansion of the radiation field 224 can be uniform to form a cone-shaped field. The expansion of the radiation field 224 can allow the radiation field 224 to extend above the top surface and / or below the bottom surface of the substrate. By completely covering the substrate, electrostatic discharge across the entire substrate can be reduced or eliminated. For example, the radiation field 224 can generate positive and negative ions on all sides of the substrate 240 that can neutralize static charges on all surfaces of the substrate 240 and / or other transfer components that are in proximity to and / or contact with the substrate 240. Additionally, it can dissipate static charge buildup in the chamber and / or transfer components that contact or are otherwise in proximity to the substrate.

[0028] In some embodiments, the ionizers 220 can be generally parallel to the top and / or bottom of the chamber body 203. For example, the ionizers can be generally at the same height (e.g., within or about 30 degrees from horizontal (or other direction parallel to the top and / or bottom of the chamber), within or about 20 degrees from horizontal, within or about 15 degrees from horizontal, within or about 10 degrees from horizontal, within or about 5 degrees from horizontal, within or about 3 degrees from horizontal, within or about 1 degree from horizontal, or less). In some embodiments, each ionizer can be horizontally aligned with the opening 208 (e.g., the top, bottom, or center of the opening 208). For example, the ionizers 220 can be substantially aligned with the transfer height of the substrate 240 such that the radiation field 224 above and below the substrate 240 is substantially uniform.

[0029] The multiple ionizers 220 can be positioned at the same height and / or distance from the opening 208. Additionally or alternatively, the multiple ionizers 220 can be positioned symmetrically around the opening 208. For example, in an embodiment having two ionizers 220, the two ionizers 220 can be positioned at the same height and / or distance from the opening 208 in the sidewall 202. When positioned at the same height and distance, and at the same angle as described below, the multiple ionizers 220 can be equidistant from the opening 208. The equidistant positioning can provide a uniform ion field directed toward the opening 208. The uniform ion field can ensure that static charges (e.g., on the substrate 240, chamber parts, transfer components, etc.) can be neutralized as the substrate 240 passes through the radiation field 224.

[0030] In embodiments, the multiple ionizers 220 can be coupled to the body 203 such that the longitudinal axis A of the source is laterally offset from the longitudinal axis L of the chamber at an angle between about 40° and about 70°. For example, the multiple ionizers 220 can be coupled to the sidewall 202 of the body 203 such that the longitudinal axis A of the source is at an angle between about 45° and about 70°, between about 55° and about 70°, between about 60° and about 70°, between about 65° and about 70°, between about 40° and about 65°, between about 40° and about 60°, between about 40° and about 55°, between about 40° and about 50°, or between about 40° and about 45° relative to the longitudinal axis L. At an angle between 40° and about 70°, the radiation field 224 can cover the entire width of the substrate 240 and / or the opening 208, thereby reducing or eliminating electrostatic discharge at all locations on the substrate 240 and / or the chamber / transfer components. It is contemplated that other angular ranges may be used depending on the location of the ionizer 220.

[0031] The multiple ionizers 220 can generate positive and negative ions. The positive and negative ions can combine with and neutralize static charges on the chamber 201, the transfer device, and / or the substrate. The ionizers 220 can be configured to operate in a vacuum environment within the chamber. For example, in embodiments, the multiple ionizers 220 generate positive and negative ions without the introduction of air or other gases (e.g., a vacuum environment within the chamber). However, it is contemplated that in some embodiments, the multiple ionizers 220 can generate positive and negative ions in the presence of another gas.

[0032] Although shown with the ionizer 220 coupled to the sidewall 202 of the chamber, it will be appreciated that in some embodiments the ionizer may be positioned elsewhere in the chamber body 203, such as on or near the bottom or top of the body 203.

[0033] 3A-3B show front and isometric views, respectively, of an exemplary chamber ionizer 300 in accordance with some embodiments of the present technology. Chamber ionizer 300 may be similar to chamber ionizer 220 and may include any of the features described in connection with chamber ionizer 220.

[0034] The chamber ionizer 300 can include and / or be attached to a body 301. The body 301 of the chamber ionizer 300 can have any shape, including oval, circular, rectangular, polygonal, or any other shape. The body 301 can define a chamber opening 302, a viewport opening 304, and an ionizer opening 306. The chamber opening 302 can be aligned with a corresponding opening in a sidewall of the chamber to provide visual access to the interior of the chamber. The chamber opening 302 can be located on the opposite side of the body 301 from the viewport opening 304. The interior of the body 301 can be generally open so that a user can view the interior of the chamber through the viewport opening 304. A transparent, non-reactive panel, such as a polycarbonate panel, can be associated with the viewport opening 304 to seal it. As shown, the chamber opening 302 and the viewport opening 304 can be located on faces of the body 301 that are substantially parallel to each other and / or to adjacent sidewalls of the chamber. In embodiments, the chamber ionizer 300 can be attached to a viewport of the chamber, such as viewport 216 of the chamber 201. Thus, the viewport opening 304 on the chamber ionizer 300 (such as one defined through one of the sidewalls of the chamber) can serve as an attachment point for the chamber ionizer 300 while simultaneously allowing for uninterrupted function of the viewport.

[0035] The chamber opening 302 and the viewport opening 304 can be substantially the same shape. For example, as shown, the chamber opening 302 and the viewport opening 304 each have a generally rectangular shape. It is contemplated that the chamber opening 302 and the viewport opening 304 can also be different shapes. The chamber opening 302 and / or the viewport opening 304 can have any shape, including oval, circular, square, polygonal, or any other shape. In embodiments, the surfaces of the body 301 that define the chamber opening 302 and the viewport opening 304 can be substantially the same shape, and the openings can be the same shape as these surfaces. However, it is contemplated that the viewport opening 304 can be smaller than the chamber opening 302 to accommodate the ionizer opening 306.

[0036] The body 301 may include a flange 308 proximate the chamber opening 302. The flange 308 may extend radially outward from the chamber opening 302. The flange 308 may extend continuously around the entire periphery of the chamber opening 302 or may be discontinuous, such as by being formed from a series of sections separated by gaps. The flange 308 may define a plurality of apertures 310. The plurality of apertures 310 may be used to couple the chamber ionizer 300 to a chamber for processing a substrate. For example, a plurality of fasteners, such as screws, rivets, and / or bolts, may extend through the apertures to secure the chamber ionizer 300 to a sidewall of the chamber.

[0037] A plane P1 may extend through the chamber opening 302 and may be coextensive with the chamber opening 302. That is, the chamber opening 302 may be defined on the plane P1, which may be the first plane. A plane P2 may extend through the viewport opening 304 and may be coextensive with the viewport opening 304. That is, the viewport opening may be defined on the plane P2, which may be the second plane of the body 301. A plane P3 may extend through the ionizer opening 306 and may be coextensive with the ionizer opening 306. These planes extending through the chamber opening 302, the viewport opening 304, and the ionizer opening 306 may be vertical planes. That is, these planes may extend entirely through the chamber opening 302, the viewport opening 304, and the ionizer opening 306, respectively. A plane P1, or first plane, extending through the chamber opening 302 and a plane P2, or second plane, extending through the viewport opening 304 can be substantially parallel. A plane P3 extending through the ionizer opening 306 can be tilted relative to the plane P1 extending through the chamber opening 302 and / or the plane P2 extending through the viewport opening 304.

[0038] The ionizer 300 may include an ionizer housing 322 that includes a light source, which may extend along a longitudinal axis A of the ionizer housing 322 and may be coupled to and / or otherwise oriented toward the ionizer opening 306. For example, the light source may be housed within the ionizer housing 322 and direct ionizing light into the chamber through the ionizer opening 306. The light source may be a VUV source. The longitudinal axis A of the ionizer housing 322 (and subsequently the light source) may be aligned with the ionizer opening 306. The light source of the ionizer 300 may be oriented toward the chamber opening 302 of the body 301. The longitudinal axis A of the light source may be tilted with respect to the plane P1 extending through the chamber opening 302 and / or the viewport opening 304, because the plane P3 extending through the ionizer opening 306 is tilted with respect to the plane P1 extending through the chamber opening 302 and / or the viewport opening 304. The configuration of the light source of the ionizer 300 being tilted can enable the radiation field to be emitted from the light source when the ionizer 300 is coupled to a chamber.

[0039] In some embodiments, the radiation field can be wide enough to extend across substantially the entire width of an opening in a sidewall of the chamber used to move a substrate into and / or out of the chamber. In other embodiments, the chamber can include multiple ionizers 300 positioned (e.g., on opposing sidewalls of the chamber) to collectively emit a radiation field that spans the entire width of each opening in the chamber. As previously discussed, the ionizer housing 322 can be coupled to the body 301 such that the longitudinal axis A of the ionizer housing 322 and light source can be at an angle of about 40° to about 70° with respect to a plane P1 extending through the chamber opening 302. Here, this angle can be measured with respect to the plane P1 extending through the chamber opening 302. Again, the plane P1 extending through the chamber opening 302 can be a vertical plane.

[0040] In an embodiment, the ionizer housing 322 may include a flange 324 that can be used to couple the ionizer housing 322 to the body 301. The flange 324 may extend radially outward from the light source of the ionizer 300. The flange 324 may define a plurality of apertures 326 that can be used to couple the ionizer housing 322 to the body 301 of the chamber ionizer 300. For example, a plurality of fasteners, such as screws, rivets, and / or bolts, may extend through the apertures 326 to secure the ionizer housing 322 to the body 301 of the chamber ionizer 300. The flange 324 of the ionizer housing 322, when coupled to the body 301 of the chamber ionizer 300, may be angled relative to the flange 308 proximate the chamber opening 302, such that the light source of the ionizer is directed generally toward the transfer opening of the chamber. In an embodiment, the flange 324 can have a consistent thickness so that the longitudinal axis A of the light source can remain at least substantially perpendicular to the outer boundary of the ionizer aperture 306 (e.g., plane P3), thereby ensuring that the longitudinal axis A of the light source is tilted relative to plane P1.

[0041] 4 illustrates operations of an exemplary method 400 of substrate processing in accordance with some embodiments of the present technique. The method can be performed in a variety of processing chambers, including chambers 100 and 201 described above, which can include a chamber ionization device in accordance with embodiments of the present technique, such as chamber ionization device 220 or 300. Method 400 can include several optional operations, which may or may not be specifically associated with some embodiments of methods in accordance with the present technique.

[0042] Method 400 can include a processing method that can include operations for transferring substrates between chambers, such as between various deposition operations. The method can include optional operations before the start of method 400, or the method can include additional operations during or after method 400. For example, method 400 can include operations that are performed in a different order than shown.

[0043] The method 400 may include engaging the substrate using a robotic arm at operation 405. For example, the substrate may be engaged using robotic arm 134, 136, or 270. One or more end effectors of the robotic arm may interface with the substrate to engage the substrate.

[0044] At operation 410, the method 400 may include moving a substrate into the chamber through an opening in the body of the chamber. For example, a robot arm may transfer the substrate from a factory interface (such as factory interface 112) to a load lock chamber. The robot arm may deliver the substrate to a substrate support surface (such as substrate support pins) located in an interior region of the chamber. As previously discussed, the body may define the interior region. At operation 415, the method 400 may include directing VUV light toward an opening in one of the sidewalls of the body of the chamber to form positive and negative ions that react with charged materials on the substrate as it is moved into the chamber. The VUV light may be emitted as an ion field from multiple ionizers. The VUV light may neutralize charge buildup on the substrate. The VUV light may also neutralize any charge buildup on any components or surfaces within the chamber that may occur when the substrate is delivered to and / or removed from the chamber, particularly when the substrate is swapped from the robot arm to the substrate support surface and / or substrate support pins. Other components, such as the substrate support pins, may be charged, opposite in charge to the substrate, and accordingly, when the substrate is placed on the substrate support pins, electrostatic discharges may occur that, if not adequately neutralized, may cause defects in the substrate.

[0045] In embodiments, the VUV light can be directed toward the opening in the body without introducing any air flow. For example, the chamber can be a load lock chamber that provides a transitional environment between ambient pressure (e.g., a factory interface) and a vacuum and / or other low-pressure environment (e.g., a transfer chamber interface). That is, the VUV light can form positive and negative ions from low levels of air, gas, and / or other components already present in the chamber without introducing additional materials into the chamber. Directing the VUV light without any air flow (e.g., in a vacuum environment within the chamber) can eliminate or reduce the risk of substrate contamination and reduce or eliminate static charge on the substrate and nearby transfer and / or chamber parts. The VUV light can extend across the entire width of the substrate, above the top surface, and below the bottom surface as the substrate is moved into the chamber. For example, the VUV light can be emitted in a three-dimensional form (e.g., a cone-shaped form) that extends above and / or below the substrate. That is, the ion field emitted toward the substrate can be uniform across the entire substrate. The uniform ion field can be achieved by the arrangement of multiple ionizers discussed above. By covering the entire width and height of the substrate, static charge can be reduced along the entire surface of the substrate (and transfer / chamber parts that contact and / or are otherwise in close proximity to the substrate).

[0046] Directing VUV light toward an opening in one of the sidewalls of the chamber body can reduce or neutralize static charge through photoionization. The VUV light can be directed from an ionizer light source, such as the light source of ionizer 220 or 300. The VUV light can be radiated onto atoms adjacent to the substrate as it is moved into the chamber. The VUV light can eject electrons from molecules, generating positive ions and electrons. The ejected electrons can combine with uncharged molecules to form negative ions. The positive and negative ions can be continuously generated in the VUV-irradiated area or in the area where the VUV light is emitted. The positive and negative ions can combine with static charge on the substrate to reduce or neutralize the charge. Excess positive or negative ions can recombine and return to their original, uncharged state. Similar to the substrate, other areas that may become charged, including the chamber, the robot arm, multiple substrate support pins, or a combination thereof, can also be neutralized.

[0047] At operation 420, the method 400 may include positioning a substrate on a plurality of substrate support pins disposed in the interior region. As the substrate is moved into the chamber, if the VUV light is not directed toward an opening in one of the sidewalls of the chamber's body, electrostatic discharge may occur if the substrate support pins and the substrate come into contact or proximity with each other. As previously discussed, electrostatic discharge may form defects on the substrate and / or in the final device. At operation 425, the method 400 may include decoupling the robot arm from the substrate. After the robot arm is decoupled from the substrate, the robot arm may be removed from the chamber to allow further processing of the substrate.

[0048] After the charge on the substrate is neutralized, the substrate can be transferred to one or more processing chambers where one or more processes can be performed on the substrate, such as, but not limited to, one or more processing operations such as PECVD, atomic layer deposition, physical vapor deposition, etching, pre-cleaning, degassing, alignment, and other substrate processes including annealing and / or ashing.

[0049] In the foregoing description, for purposes of explanation, numerous details are set forth in order to provide an understanding of various embodiments of the present technology. However, it will be apparent to one skilled in the art that particular embodiments may be practiced without some of these details or with additional details.

[0050] Although several embodiments have been disclosed, those skilled in the art will recognize that various modifications, alternative structures, and equivalents can be used without departing from the spirit of the embodiments. In addition, to avoid unnecessarily obscuring the present technology, well-known processes and elements have not been described. Therefore, the above description should not be considered as limiting the scope of the present technology.

[0051] Where a range of values ​​is provided, unless the context clearly dictates otherwise, it is understood that each intervening value between the upper and lower limits of that range is also specifically disclosed, to the smallest decimal point of the lower limit. Narrower ranges between any stated value or unstated intervening value within a stated range, and any other stated value or intervening value within that stated range, are encompassed. The upper and lower limits of those smaller ranges may be independently included or excluded within that range, and each range that includes either, zero, or both limits within the smaller range, depending on any specifically excluded limit within the stated range, is also encompassed within the scope of the technology. A stated range includes one or both of the limits, and also includes ranges excluding either or both of those included limits.

[0052] As used herein, in the appended claims, the singular forms "a," "an," and "the" include plural references unless the context clearly dictates otherwise. Thus, for example, a reference to "a chamber" includes a plurality of such chambers, a reference to "the opening" includes a reference to one or more openings and equivalents thereof known to those skilled in the art, and so forth.

[0053] Additionally, the words "comprise(s)," "comprising," "contain(s)," "containing," "include(s)," and "including," when used in this specification and the claims that follow, are intended to specify the presence of stated features, integers, components, or operations, but do not exclude the presence or addition of one or more other features, integers, components, operations, acts, or groups.

Claims

1. A chamber comprising a body having one or more sidewalls, the one or more sidewalls define an opening; the body defining an interior region; and a plurality of substrate support pins disposed in the interior region; a plurality of ionizers coupled to one or more of the sidewalls of the body, a plurality of ionizers, the light source of each of the plurality of ionizers being oriented toward the opening defined in the one or more side walls; A substrate processing system comprising:

2. the one or more side walls define a plurality of viewports; the plurality of ionizers are coupled to the body through the plurality of viewports; The substrate processing system of claim 1 .

3. the radiation fields emitted by the light sources of each of the plurality of ionizers overlap; The substrate processing system of claim 1 .

4. each of the plurality of ionizers is coupled to the body such that the longitudinal axis of the respective light source is at an angle of about 40° to about 70° with respect to a longitudinal axis extending through the opening and bisecting the body; The substrate processing system of claim 1 .

5. the radiation fields generated by the light sources of each of the plurality of ionizers collectively cover the entire width of the opening of the chamber; The substrate processing system of claim 1 .

6. the plurality of ionizers generate positive and negative ions even in the absence of air; The substrate processing system of claim 1 .

7. the plurality of ionizers comprise vacuum ultraviolet ionizers; The substrate processing system of claim 1 .

8. a plurality of chambers; and a robot arm connecting the plurality of chambers. The substrate processing system of claim 1 , further comprising:

9. each of the plurality of ionizers comprises a body having a chamber opening, a viewport opening, and an ionizer opening; a plane extending entirely through the ionizer opening is inclined relative to a plane extending entirely through the chamber opening; the light source of each of the ionizers is coupled to the ionizer aperture; The substrate processing system of claim 1 .

10. a body having a chamber opening, a viewport opening, and an ionizer opening, a body, the plane extending entirely through the ionizer opening being inclined relative to the plane extending entirely through the chamber opening; an ionizer housing including a light source coupled to the ionizer opening, a longitudinal axis of the light source aligned with the ionizer aperture; an ionizer housing, the light source directed toward the chamber opening of the body; A chamber ionization device comprising:

11. the body including a flange adjacent the chamber opening; the flange defining a plurality of apertures connectable to a chamber for transferring substrates; The chamber ionization device of claim 10.

12. the ionizer housing is coupled to the body such that the longitudinal axis of the light source is at an angle of about 40° to about 70° with respect to a plane extending entirely through the viewport opening; The chamber ionization device of claim 10.

13. the chamber opening and the viewport opening are substantially the same shape; The chamber ionization device of claim 10.

14. the light source is a vacuum ultraviolet photoionization device; The chamber ionization device of claim 10.

15. the chamber opening is defined in a first plane of the body; the viewport opening is defined in a second planar surface of the body; the first plane and the second plane are substantially parallel; The chamber ionization device of claim 10.

16. engaging a substrate using a robotic arm; moving the substrate into the chamber through an opening in one or more sidewalls of a body of the chamber, the body defining an interior region; directing vacuum ultraviolet light toward the opening in one of the sidewalls of the body of the chamber to form positive and negative ions that react with charged material on the substrate as the substrate is moved into the chamber, the vacuum ultraviolet light neutralizing charge buildup on the substrate; positioning the substrate on a plurality of substrate support pins disposed in the interior region; separating the robot arm from the substrate, wherein the vacuum ultraviolet light reduces electrostatic discharge when separating the robot arm; and A substrate transfer method comprising:

17. the vacuum ultraviolet light is directed toward the opening in the body without airflow; The method of claim 16 .

18. the vacuum ultraviolet light reduces electrostatic discharge on the substrate, the chamber, the robot arm, the plurality of substrate support pins, or a combination thereof; The method of claim 16 .

19. the vacuum ultraviolet light extends across the width of the substrate, above the top surface, and below the bottom surface as the substrate is moved into the chamber; The method of claim 16 .

20. the vacuum ultraviolet light is emitted from a plurality of ionizers to generate an ion field therefrom; The method of claim 16 .

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