Method for manufacturing semiconductor device, method for manufacturing temporary fixing film material, and temporary fixing film material

Abstract

Disclosed is a method for manufacturing a semiconductor device, the method including irradiating a layered body for temporary fixing with light to thereby separate a semiconductor member from a resin layer for temporary fixing. The layered body for temporary fixing is formed by a method which includes layering a film material for temporary fixing onto a light absorption layer, with a first principal surface of the film material in contact with the light absorption layer, and exposing a second principal surface by peeling a second release film from the film material for temporary fixing. When the maximum value of a logarithmic attenuation rate in rigid pendulum measurement of a first principal surface and a second principal surface of the resin layer for temporary fixing is δmax1 and δmax2, respectively, δmax2 is less than δmax1.

Description

[Technical Field]

[0001] The present disclosure relates to a method for manufacturing a semiconductor device, a method for manufacturing a temporary fixing film material, and a temporary fixing film material. [Background technology]

[0002] A semiconductor device may be manufactured by a method in which a semiconductor member is processed while being temporarily fixed to a support member, and then the semiconductor member is separated from the support member. For example, Patent Document 1 discloses a method in which a semiconductor member is temporarily fixed to a support member via a temporary fixing material layer having a temporary fixing resin layer, and after processing, the semiconductor member is separated from the support member by light irradiation. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] International Publication No. 2020 / 111193 Summary of the Invention [Problem to be solved by the invention]

[0004] When a portion of the resin of the temporary fixing material layer (temporary fixing resin layer) remains on the semiconductor member separated from the support member, unwanted resin residue may be generated.

[0005] One aspect of the present disclosure relates to a method for suppressing the generation of resin residue on a semiconductor member that accompanies separation when manufacturing a semiconductor device by a method that includes separating the semiconductor member from a temporary fixing resin layer via light irradiation, and a temporary fixing film material that can be used in the method. [Means for solving the problem]

[0006] One aspect of the present disclosure relates to a method for manufacturing a semiconductor device, the method including, in this order, forming a temporary fixing laminate including a support substrate having a support surface and a back surface opposite the support surface, a light absorbing layer, and a temporary fixing resin layer having a first main surface and a second main surface opposite the support surface, the light absorbing layer and the temporary fixing resin layer being laminated in this order on the support surface; temporarily fixing a semiconductor member onto the temporary fixing resin layer; irradiating the temporary fixing laminate with light from the back surface side; and separating the semiconductor member from the temporary fixing resin layer.

[0007] The temporary fixing laminate is formed by a method including: preparing a temporary fixing film material having the temporary fixing resin layer, a first release film, and a second release film, the first release film being in contact with the first main surface of the temporary fixing resin layer and the second release film being in contact with the second main surface of the temporary fixing resin layer, the method including: peeling the first release film from the temporary fixing film material and laminating the temporary fixing film material on the light absorbing layer provided on the support surface with the exposed first main surface of the temporary fixing resin layer in contact with the light absorbing layer, and peeling the second release film from the temporary fixing film material to expose the second main surface of the temporary fixing resin layer. max 1 and δ max When δ is 2, max 2 is δ max Less than 1.

[0008] Another aspect of the present disclosure relates to a method for producing a temporary fixing film material, the method comprising: applying a resin varnish containing a solvent onto a first release film to form a film of the resin varnish, and then removing the solvent from the film to form a temporary fixing resin layer on the first release film, the temporary fixing resin layer having a first main surface in contact with the first release film and a second main surface opposite the first main surface; and laminating the second release film to the second main surface of the temporary fixing resin layer, wherein the peel strength of the surface of the first release film in contact with the temporary fixing resin layer is smaller than the peel strength of the surface of the second release film in contact with the temporary fixing resin layer.

[0009] Yet another aspect of the present disclosure relates to a temporary fixing film material including a temporary fixing resin layer having a first main surface and an opposite second main surface, a first release film, and a second release film. The first release film, the temporary fixing resin layer, and the second release film are laminated in this order with the first release film in contact with the first main surface of the temporary fixing resin layer and the second release film in contact with the second main surface of the temporary fixing resin layer. The maximum values ​​of the logarithmic attenuation coefficients of the first main surface and the second main surface of the temporary fixing resin layer in rigid pendulum measurements are respectively δ max 1 and δ max When δ is 2, max 2 is δ max The peel strength of the surface of the first release film that contacts the temporary fixing resin layer is smaller than the peel strength of the surface of the second release film that contacts the temporary fixing resin layer. [Effects of the Invention]

[0010] According to one aspect of the present disclosure, when a semiconductor device is manufactured by a method including separating a semiconductor member from a temporary fixing resin layer via light irradiation, the generation of resin residue on the semiconductor member due to separation can be suppressed. [Brief explanation of the drawings]

[0011] [Figure 1] 1A to 1C are process diagrams showing an example of a method for manufacturing a semiconductor device. [Figure 2] 1A to 1C are process diagrams showing an example of a method for manufacturing a semiconductor device. [Figure 3] 1A to 1C are process diagrams showing an example of a method for manufacturing a semiconductor device. [Figure 4] 1A to 1C are process diagrams showing an example of a method for manufacturing a semiconductor device. [Figure 5] FIG. 1 is a schematic diagram showing a method of rigid pendulum measurement. [Figure 6] 1A to 1C are process diagrams showing an embodiment of a method for producing a temporary fixing film material. [Figure 7] 1 is a graph showing the relationship between logarithmic decrement and temperature in rigid pendulum measurements. [Figure 8] 1 is an optical microscope photograph of a semiconductor chip peeled off from a temporary fixing resin layer. [Figure 9] 1 is an optical microscope photograph of a semiconductor chip peeled off from a temporary fixing resin layer. DETAILED DESCRIPTION OF THE INVENTION

[0012] The present invention is not limited to the following examples.

[0013] 1, 2, and 3 are process diagrams showing an example of a method for manufacturing a semiconductor device. The method shown in Figures 1 to 3 includes forming a temporary fixing laminate 15, which includes a support substrate 21 having a support surface 21S1 and a back surface 21S2 opposite thereto, a light absorbing layer 22, and a temporary fixing resin layer 10 having a first main surface 10S1 and a second main surface 10S2 opposite thereto, and in which the light absorbing layer 22 and the temporary fixing resin layer 10 are laminated in this order on the support surface 21S1; temporarily fixing a semiconductor member 3 on the temporary fixing resin layer 10; irradiating the temporary fixing laminate 15 with light hν from the back surface 21S2 side; and separating the semiconductor member 3 from the temporary fixing resin layer 10, in this order.

[0014] The temporary fixing laminate 15 is formed using a temporary fixing film material 1 having a temporary fixing resin layer 10, a first release film 11, and a second release film 12, as shown in FIG. 1(a). The first release film 11 and the second release film 12 have a release surface 11S and a release surface 12S, respectively. The release force of the release surface 11S with respect to the temporary fixing resin layer 10 may be smaller than the release force of the release surface 12S with respect to the temporary fixing resin layer 10. In the temporary fixing film material 1, the first release film 11, the temporary fixing resin layer 10, and the second release film 12 are laminated in this order, with the release surface 11S of the first release film 11 in contact with the first main surface 10S1 of the temporary fixing resin layer 10 and the release surface 12S of the second release film 12 in contact with the second main surface 10S2 of the temporary fixing resin layer 10.

[0015] The temporary fixing laminate 15 is formed by a method including preparing a temporary fixing film material 1, peeling off a first release film 11 from the temporary fixing film material 1 as shown in (b) of Figure 1, and then laminating the temporary fixing film material 1 on a light absorbing layer 22 provided on a support surface 21S1 in an orientation in which the exposed first main surface 10S1 of the temporary fixing resin layer 10 contacts the light absorbing layer 22 as shown in (c) of Figure 1, and peeling off a second release film 12 from the temporary fixing film material 1 to expose a second main surface 10S2 of the temporary fixing resin layer 10 as shown in (d) of Figure 1.

[0016] The support substrate 21 may be, for example, an inorganic glass substrate or a transparent resin substrate. The thickness of the support substrate 21 may be, for example, 0.1 to 2.0 mm.

[0017] By forming the light absorbing layer 22 on the support surface 21S1 of the support substrate 21, a support member 2 with a light absorbing layer, which includes the support substrate 21 and the light absorbing layer 22, is prepared.

[0018] A resin layer may be provided between the support substrate and the light absorbing layer. The resin layer may be a cured product of a curable resin layer.

[0019] An example of the light absorbing layer 22 is a conductive layer containing a conductor that absorbs light and generates heat. Examples of conductors that constitute the conductive layer serving as the light absorbing layer 22 include metals, metal oxides, and conductive carbon materials. The metals may be simple metals such as chromium, copper, titanium, silver, platinum, and gold, or alloys such as nickel-chromium, stainless steel, and copper-zinc. Examples of metal oxides include indium tin oxide (ITO), zinc oxide, and niobium oxide. These may be used alone or in combination of two or more. The conductor may be chromium, titanium, or a conductive carbon material.

[0020] The light absorbing layer 22 may be a metal layer consisting of a single layer or multiple layers. Metal layers tend to have a transmittance of 3.1% or less for incoherent light. For example, the light absorbing layer 22 may be a metal layer consisting of a copper layer and a titanium layer. The metal layer serving as the light absorbing layer 22 may be a layer formed by physical vapor deposition (PVD) such as vacuum deposition and sputtering, or chemical vapor deposition (CVD) such as plasma-enhanced chemical vapor deposition, or may be a plated layer formed by electrolytic plating or electroless plating. Physical vapor deposition allows for efficient formation of a metal layer serving as the light absorbing layer 22 that covers the surface of the support substrate 21, even if the support substrate 21 has a large area.

[0021] When the light absorbing layer 22 is a single metal layer, the light absorbing layer 22 may contain at least one metal selected from the group consisting of thallium (Ta), platinum (Pt), nickel (Ni), titanium (Ti), tungsten (W), chromium (Cr), copper (Cu), aluminum (Al), silver (Ag), and gold (Au).

[0022] The light absorbing layer 22 may be composed of two layers, a first layer and a second layer, stacked in this order from the support substrate 21 side. In this case, particularly good peelability is easily achieved if the first layer has high light absorption and the second layer has a high thermal expansion coefficient and a high elastic modulus. From this perspective, for example, the first layer may contain at least one metal selected from the group consisting of thallium (Ta), platinum (Pt), nickel (Ni), titanium (Ti), tungsten (W), and chromium (Cr), and the second layer may contain at least one metal selected from the group consisting of copper (Cu), aluminum (Al), silver (Ag), and gold (Au). The first layer may contain at least one metal selected from the group consisting of titanium (Ti), tungsten (W), and chromium (Cr), and the second layer may contain at least one metal selected from the group consisting of copper (Cu) and aluminum (Al).

[0023] Another example of the light-absorbing layer is a layer containing conductive particles that absorb light and generate heat and a binder resin in which the conductive particles are dispersed. The conductive particles may be particles containing the above-mentioned conductors. For example, the light-absorbing layer 22 may be a layer containing conductive particles and a curable resin composition. The curable resin composition constituting the light-absorbing layer may contain the same components as the curable resin composition constituting the curable resin layer in the portion other than the light-absorbing layer. The curable resin composition constituting the light-absorbing layer may be the same as or different from the curable resin composition constituting the curable resin layer in the portion other than the light-absorbing layer. The content of the conductive particles in the light-absorbing layer may be 10 to 90 parts by mass relative to the total amount of the components other than the conductive particles in the light-absorbing layer, i.e., 100 parts by mass of the binder resin or curable resin composition. A high content of conductive particles tends to make the light-absorbing layer have a transmittance of 3.1% or less for incoherent light. From the perspective of transmittance, the content of the conductive particles may be 20% by mass or more, or 30% by mass or more.

[0024] The light-absorbing layer 22 containing conductive particles and a binder resin can be formed, for example, by a method including applying a varnish containing conductive particles, a binder resin, and an organic solvent onto a support member or a resin layer, and removing the organic solvent from the coating. A pre-fabricated light-absorbing layer 22 may be laminated on the support substrate 21 or the resin layer.

[0025] The thickness of the light absorbing layer 22 may be 1 to 5,000 nm or 100 to 3,000 nm from the viewpoint of easy peelability. When the thickness of the light absorbing layer 22 is 50 to 300 nm, the light absorbing layer 22 is likely to have a sufficiently low transmittance. When the light absorbing layer 22 is a metal layer consisting of a single layer or multiple layers, the thickness of the light absorbing layer 22 (or metal layer) may be 75 nm or more, 90 nm or more, or 100 nm or more, from the viewpoint of good peelability. In particular, when the light absorbing layer 22 is a single metal layer, the thickness of the light absorbing layer 22 (or metal layer) may be 100 nm or more, 125 nm or more, 150 nm or more, or 200 nm or more, from the viewpoint of good peelability, and may be 1,000 nm or less. Even if the light absorbing layer 22 is a metal layer containing a metal with relatively low light absorption (e.g., Cu, Ni) or a metal layer containing a metal with a relatively low thermal expansion coefficient (e.g., Ti), a larger thickness tends to make it easier to obtain better peelability.

[0026] After the temporary fixing laminate 15 is formed, the semiconductor member 3 is temporarily fixed on the temporary fixing resin layer 10. The semiconductor member 3 has a main body portion 31 and connection terminals 32 provided on the outer surface of the main body portion 31. A part or all of the connection terminals 32 may be embedded in the temporary fixing resin layer 10. The semiconductor member 3 may be a semiconductor wafer or a semiconductor chip component obtained by dividing a semiconductor wafer. The semiconductor member 3 may have a rewiring layer provided on the main body portion 31, and the semiconductor member 3 may be temporarily fixed in an orientation in which the rewiring layer is located on the temporary fixing resin layer 10 side. Two or more semiconductor members may be temporarily fixed on one temporary fixing laminate, or other passive components may be temporarily fixed together with the semiconductor member.

[0027] When the temporary fixing resin layer 10 is a layer containing a curable resin composition, after the semiconductor member 3 is placed on the temporary fixing resin layer 10, the temporary fixing resin layer 10 is thermally cured or photocured, thereby temporarily fixing the semiconductor member 3 to the cured temporary fixing resin layer 10. The thermal curing conditions may be, for example, 300°C or lower or 100 to 200°C, and 1 to 180 minutes or 1 to 60 minutes.

[0028] The temporarily fixed semiconductor member 3 may be processed. (f) of Fig. 2 shows an example of processing including thinning of the main body portion 31 of the semiconductor member. The processing of the semiconductor member is not limited to this, and may include, for example, thinning of the semiconductor member (main body portion), dividing (dicing) the semiconductor member, forming a through electrode, etching, plating reflow processing, sputtering processing, or a combination thereof.

[0029] The main body 31 of the semiconductor member 3 is thinned by using a grinder or the like to grind the surface of the main body 31 opposite to the temporary fixing resin layer 10. The thickness of the thinned main body 31 may be, for example, 100 μm or less.

[0030] 3(g), a sealing layer 4 that seals the semiconductor member 3 may be formed on the temporary fixing resin layer 10, thereby forming a sealed structure 50 that includes the semiconductor member 3 and the sealing layer 4. When the temporarily fixed semiconductor member 3 is processed, the sealing layer 4 is usually formed after the semiconductor member 3 is processed.

[0031] The encapsulating layer 4 can be formed using an encapsulating material commonly used in the manufacture of semiconductor devices. For example, the encapsulating layer 4 may be formed from a thermosetting resin composition. The thermosetting resin composition used to form the encapsulating layer 4 includes, for example, an epoxy resin such as cresol novolac epoxy resin, phenol novolac epoxy resin, biphenyl diepoxy resin, or naphthol novolac epoxy resin. The encapsulating layer 4 and the thermosetting resin composition used to form it may contain additives such as a filler and / or a flame retardant.

[0032] The sealing layer 4 is formed using, for example, a solid material, a liquid material, a granular material, or a sealing film. When a sealing film is used, a compression sealing molding machine, a vacuum laminating machine, or the like is used. For example, using these machines, the sealing layer 4 can be formed by covering the semiconductor member 3 with a sealing film that has been heat-melted under conditions of 40 to 180°C (or 60 to 150°C), 0.1 to 10 MPa (or 0.5 to 8 MPa), and for 0.5 to 10 minutes. The thickness of the sealing film may be 50 to 2000 μm, 70 to 1500 μm, or 100 to 1000 μm. After the sealing layer 4 is formed, the sealing structure 50 may be divided into multiple parts including the semiconductor member 3.

[0033] 3(h), the temporary fixing laminate 15 is irradiated with light hν from the back surface 21S2 side, and then the semiconductor member 3 is separated from the temporary fixing resin layer 10. When the sealing structure 50 is formed on the temporary fixing resin layer 10, the sealing structure 50 is separated from the temporary fixing resin layer 10. As shown in FIG. 4, the semiconductor member 3 (or the sealing structure 50) may be separated from the temporary fixing resin layer 10 by a method including, in this order, irradiating the temporary fixing laminate 15 with light from the back surface 21S2 side to separate the temporary fixing resin layer 10 from the light absorbing layer 22, and peeling the temporary fixing resin layer 10 from the semiconductor member 3 (or the sealing structure 50).

[0034] When irradiated with light hν, the light absorbing layer 22 absorbs the light and instantaneously generates heat. The generated heat may cause, for example, melting of the temporary fixing resin layer 10, thermal stress between the temporary fixing laminate 15 and the semiconductor member 3 (or the sealing structure 50), and scattering of the light absorbing layer 22. One or more of these phenomena may be the main cause of the semiconductor member 3 (or the sealing structure 50) being easily separated from the temporary fixing resin layer 10 via separation of the light absorbing layer 22 and the temporary fixing resin layer 10. In order to separate the semiconductor member 3 (or the sealing structure 50) from the temporary fixing resin layer 10, stress may be applied to the semiconductor member 3 (or the sealing structure 50) during or after irradiation with light hν.

[0035] The light hν may be, for example, laser light or incoherent light. Incoherent light is non-coherent light, an electromagnetic wave with properties such as no interference fringes, low coherence, and low directivity. Incoherent light tends to attenuate as the optical path length increases. Laser light is generally coherent light, whereas light such as sunlight and fluorescent light is incoherent light. Incoherent light can also be considered light excluding laser light. The irradiation area of ​​incoherent light is generally much larger than that of coherent light (i.e., laser light), so it is possible to reduce the number of irradiations. For example, a single irradiation can cause separation of multiple semiconductor members 3. From these perspectives, incoherent light may be employed.

[0036] The incoherent light may include infrared light. The incoherent light may be pulsed light. The light source of the incoherent light is not particularly limited, but may be a xenon lamp. A xenon lamp is a lamp that uses light emission by applying and discharging light in an arc tube filled with xenon gas.

[0037] The irradiation conditions of the xenon lamp include the applied voltage, pulse width, irradiation time, irradiation distance (the distance between the light source and the temporary fixing resin layer), irradiation energy, etc. These can be set arbitrarily depending on the number of irradiations, etc. From the viewpoint of reducing damage to the semiconductor member 3, the irradiation conditions may be set so that the semiconductor member 3 (or the sealing structure 50) can be separated by one irradiation.

[0038] Resin residue, which is part of the temporary fixing resin layer 10, may remain on the semiconductor member 3 separated from the temporary fixing resin layer 10. The generation of resin residue can be suppressed by selecting the surface that comes into contact with the semiconductor member 3 from the first main surface 10S1 and the second main surface 10S2 of the temporary fixing resin layer 10 based on the logarithmic attenuation rate in rigid pendulum measurement. Specifically, the maximum value of the logarithmic attenuation rate in rigid pendulum measurement of the first main surface 10S1 is δ max 1, and the maximum value of the logarithmic damping rate in the rigid pendulum measurement of the second principal surface 10S2 is δ maxWhen δ is 2, max 2 is δ max Less than 1. Maximum logarithmic decay rate δ max is a value that reflects the degree of viscosity of the surface of the temporary fixing resin layer 10, and δ max A surface with a small δ is said to have a relatively low viscosity. max By disposing the temporary fixing resin layer 10 in a direction in which the second main surface 10S2, which is the surface showing max The occurrence of resin residue can be relatively reduced compared to when the first main surface 10S1 having the δ max 2 may be, for example, 0.7 or less, or 0.6 or less, or may be 0.2 or more.

[0039] Here, the maximum value of the logarithmic attenuation in rigid pendulum measurement can be measured under the condition of increasing the temperature from 25°C to 150°C at a temperature increase rate of 5°C / min. FIG. 5 is a schematic diagram showing a method of rigid pendulum measurement. The method shown in FIG. 5 uses a temperature-variable stage 6, a frame 71 (item code: AX-FRB-100), and a pendulum 7 (item code: RBP040) having a cylindrical edge 72 fixed to one end of the frame 71. A weight and a vibration displacement detector are attached to the other end of the frame 71. A temporary fixing resin layer 10 as a test piece is fixed on the stage 6, and the edge 72 is placed on the first main surface 10S1 or the second main surface 10S2 of the temporary fixing resin layer 10. In this state, the logarithmic attenuation can be obtained from the change in the oscillation period when the pendulum oscillates around the edge 72 as a fulcrum. By measuring while increasing the temperature of the stage 6, a curve showing the relationship between the logarithmic attenuation and temperature is obtained. From this curve, the maximum value of the logarithmic attenuation, δ max δ measured under the same conditions max A principal surface having a relatively small value can be selected as the surface in contact with the semiconductor member.

[0040] Fig. 6 is a process diagram showing one example of a method for producing the temporary fixing film material 1. The method shown in Fig. 6 includes applying a resin varnish containing a solvent onto the release surface 11S of the first release film 11 to form a resin varnish film, and then removing the solvent from the film to form a temporary fixing resin layer 10 on the first release film 11, the temporary fixing resin layer 10 having a first main surface 10S1 in contact with the first release film 11 and a second main surface 10S2 on the opposite side thereof, and bonding a second release film 12 to the second main surface 10S2 of the temporary fixing resin layer 10.

[0041] When the temporary fixing resin layer 10 is formed by a method including the application of such a resin varnish, the maximum value δ of the logarithmic decrement exhibited by the first main surface 10S1 in contact with the first release film 11 to which the resin varnish is applied is usually max 1, δ of the second main surface 10S2 that contacts the second release film 12 that is bonded to the formed temporary fixing resin layer 10 max 2 is relatively smaller.

[0042] Therefore, by using the surface of the formed temporary fixing resin layer 10 on the side of the second release film 12, which is laminated as a protective film, as the surface for temporarily fixing the semiconductor member 3, it is possible to reduce resin residue. Since the protective film is usually peeled off first when using the film material, an easily peelable film with a relatively lower peel strength than the base film to which the resin varnish is applied is used. However, by selecting the first release film 11 and the second release film 12 so that the peel strength of the release surface 11S of the first release film 11 used as the base film that contacts the temporary fixing resin layer 10 is smaller than the peel strength of the release surface 12S of the second release film 12 (protective film) that contacts the temporary fixing resin layer 10, the temporary fixing film material 1 can be easily applied in the above-mentioned method that includes first peeling the first release film 11 from the temporary fixing film material 1 while leaving the second release film 12.

[0043] Generally, release films classified by the degree of release property are commercially available. For example, a release film with light release properties may be used as the first release film 11, and a release film with heavy release properties may be used as the second release film. For example, resin films such as polyethylene terephthalate films having release surfaces that have been treated to have various release strengths are commercially available.

[0044] The temporary fixing resin layer 10 can be a layer containing a curable resin composition that is cured by heat or light. The temporary fixing resin layer 10 before curing has adhesiveness to such an extent that the semiconductor member 3 can be attached by pressure bonding or the like. The cured temporary fixing resin layer 10 holds the semiconductor member 3 for as long as necessary, such as while the semiconductor member 3 is being processed.

[0045] From the viewpoint of stress relaxation, the thickness of the temporary fixing resin layer 10 may be, for example, 50 μm or less, 40 μm or less, or 30 μm or less and 0.1 μm or more, or 50 μm or less, 40 μm or less, or 30 μm or less and 1 μm or more.

[0046] The storage modulus of the cured temporary fixing resin layer 10 at 25°C may be 5 to 100 MPa. When the storage modulus of the cured temporary fixing resin layer 10 at 25°C is 5 MPa or more, the support substrate 21 tends to easily hold the semiconductor member 3 without bending, and the amount of resin residue tends to be further reduced. When the storage modulus of the cured temporary fixing resin layer 10 at 25°C is 100 MPa or less, the positional deviation of the semiconductor member 3 tends to be reduced. From the same viewpoint, the storage modulus at 25°C of the cured temporary fixing resin layer 10 may be 5.5 MPa or more, 6 MPa or more, or 6.3 MPa or more to 100 MPa or less, 5.5 MPa or more, 6 MPa or more, or 6.3 MPa or more to 90 MPa or less, 5.5 MPa or more, 6 MPa or more, or 6.3 MPa or more to 80 MPa or less, 5.5 MPa or more, 6 MPa or more, or 6.3 MPa or more to 70 MPa or less, or 5.5 MPa or more, 6 MPa or more, or 6.3 MPa or more to 65 MPa or less. In this specification, the storage modulus of the cured temporary fixing resin layer 10 means a value determined by viscoelasticity measurement under conditions of a temperature rise rate of 5°C / min, a frequency of 1 Hz, and a tensile mode.

[0047] The storage modulus at 25°C of the cured temporary fixing resin layer 10 can be increased, for example, by increasing the content of the hydrocarbon resin described below, applying a hydrocarbon resin with a high Tg, or adding an insulating filler to the curable resin composition.

[0048] The storage modulus of the cured temporary fixing resin layer 10 at 250°C may be 0.70 MPa or more, 0.80 MPa or more, 0.85 MPa or more, or 0.90 MPa or more but 2.00 MPa or less; 0.70 MPa or more, 0.80 MPa or more, 0.85 MPa or more, or 0.90 MPa or more but 2.00 MPa or less; 0.70 MPa or more, 0.80 MPa or more, 0.85 MPa or more, or 0.90 MPa or more but 1.90 MPa or less; 0.70 MPa or more, 0.80 MPa or more, 0.85 MPa or more, or 0.90 MPa or more but 1.80 MPa or less; or 0.70 MPa or more, 0.80 MPa or more, 0.85 MPa or more, or 0.90 MPa or more but 1.75 MPa or less.

[0049] The curable resin composition constituting the temporary fixing resin layer 10 may contain a thermosetting resin and a hydrocarbon resin. The hydrocarbon resin is a resin whose main skeleton is composed of a hydrocarbon. When the curable resin composition contains a hydrocarbon resin, the semiconductor member 3 can be easily attached to the temporary fixing resin layer 10 at low temperatures.

[0050] From the viewpoint of low-temperature application property of the temporary fixing resin layer 10, the hydrocarbon resin may have a glass transition temperature (Tg) of 50° C. or lower. From the viewpoint of good releasability of the temporary fixing resin layer 10, the hydrocarbon resin may have a Tg of −100° C. or higher, or −50° C. or higher.

[0051] The Tg of a hydrocarbon resin is the midpoint glass transition temperature obtained by differential scanning calorimetry (DSC). Specifically, the Tg of a hydrocarbon resin is the midpoint glass transition temperature calculated by a method in accordance with JIS K 7121, by measuring the change in calorific value under conditions of a temperature rise rate of 10°C / min and a measurement temperature of -80 to 80°C.

[0052] Examples of hydrocarbon resins include at least one selected from the group consisting of ethylene-propylene copolymers, ethylene-1-butene copolymers, ethylene-propylene-1-butene copolymer elastomers, ethylene-1-hexene copolymers, ethylene-1-octene copolymers, ethylene-styrene copolymers, ethylene-norbornene copolymers, propylene-1-butene copolymers, ethylene-propylene-non-conjugated diene copolymers, ethylene-1-butene-non-conjugated diene copolymers, ethylene-propylene-1-butene-non-conjugated diene copolymers, polyisoprene, polybutadiene, styrene-butadiene-styrene block copolymers (SBS), styrene-isoprene-styrene block copolymers (SIS), styrene-ethylene-butylene-styrene block copolymers (SEBS), styrene-ethylene-propylene-styrene block copolymers (SEPS), and hydrogenated versions thereof. These hydrocarbon resins may contain carboxyl groups. The carboxyl groups can be introduced, for example, by modification with maleic anhydride or the like. The hydrocarbon resin may include a styrene-based resin containing a monomer unit derived from styrene, and the styrene-based resin may be a styrene-ethylene-butylene-styrene block copolymer (SEBS).

[0053] The weight-average molecular weight (Mw) of the hydrocarbon resin may be 10,000 to 5,000,000 or 100,000 to 2,000,000. A weight-average molecular weight of 10,000 or more tends to ensure the heat resistance of the temporary fixing resin layer. A weight-average molecular weight of 5,000,000 or less tends to prevent a decrease in flow and adhesion of the temporary fixing resin layer. The weight-average molecular weight here is a polystyrene-equivalent value measured by gel permeation chromatography (GPC) using a calibration curve based on standard polystyrene.

[0054] The content of the hydrocarbon resin may be 40 parts by mass or more, 50 parts by mass or more, or 60 parts by mass or more to 90 parts by mass or less, or 40 parts by mass or more, 50 parts by mass or more, or 60 parts by mass or more to 85 parts by mass or less, or 40 parts by mass or more, 50 parts by mass or more, or 60 parts by mass or more to 80 parts by mass or less, relative to 100 parts by mass of the total mass of the curable resin composition constituting the temporary fixing resin layer 10. When the content of the hydrocarbon resin is within these numerical ranges, a thin and flat temporary fixing resin layer 10 tends to be easily formed. Furthermore, the temporary fixing resin layer 10 tends to have good adhesion at low temperatures and an appropriate storage modulus after curing. Here, "total mass of the curable resin composition" means the total mass of the components excluding the solvent described below.

[0055] The thermosetting resin is a component that cures the curable resin composition through a thermosetting reaction. The thermosetting reaction can be a reaction between the thermosetting resin and a curing agent, self-polymerization of the thermosetting resin, or a combination thereof. Examples of thermosetting resins include epoxy resins, acrylic resins, silicone resins, phenolic resins, thermosetting polyimide resins, polyurethane resins, melamine resins, and urea resins. These may be used alone or in combination of two or more. The thermosetting resin may contain an epoxy resin because it has better heat resistance, workability, and reliability.

[0056] An epoxy resin is a compound having one or more epoxy groups. An epoxy resin may have two or more epoxy groups. Examples of epoxy resins having two or more epoxy groups include bisphenol A type epoxy resins, novolac type epoxy resins (such as phenol novolac type epoxy resins), glycidylamine type epoxy resins, heterocycle-containing epoxy resins, and alicyclic epoxy resins.

[0057] The curable resin composition may contain a thermosetting resin and a curing agent thereof. The total content of the thermosetting resin and the curing agent thereof may be 10 parts by mass or more, 15 parts by mass or more, or 20 parts by mass or more to 60 parts by mass or less, or 10 parts by mass or more, 15 parts by mass or more, or 20 parts by mass or more to 50 parts by mass or less, or 10 parts by mass or more, 15 parts by mass or more, or 20 parts by mass or more to 40 parts by mass or less, relative to 100 parts by mass of the total mass of the curable resin composition. When the total content of the thermosetting resin and the curing agent thereof is within these ranges, a thin and flat temporary fixing resin layer tends to be easily formed, and the heat resistance of the cured temporary fixing resin layer 10 tends to be better.

[0058] When an epoxy resin is used as the thermosetting resin, the curable resin composition may contain a curing agent for the epoxy resin. The curing agent for the epoxy resin is not particularly limited, but examples thereof include amines, polyamides, acid anhydrides, polysulfides, boron trifluoride, bisphenols (such as bisphenol A, bisphenol F, and bisphenol S), and phenolic resins (such as phenol novolac resins, bisphenol A novolac resins, cresol novolac resins, and phenol aralkyl resins).

[0059] The thermosetting resin composition may further contain a curing accelerator that accelerates the curing reaction of a thermosetting resin such as an epoxy resin. Examples of the curing accelerator include imidazole compounds, dicyandiamide, dicarboxylic acid dihydrazide, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, 2-ethyl-4-methylimidazole-tetraphenylborate, and 1,8-diazabicyclo[5,4,0]undecene-7-tetraphenylborate. These may be used alone or in combination of two or more.

[0060] The content of the curing accelerator may be 0.01 to 5 parts by mass relative to 100 parts by mass of the total amount of the thermosetting resin and the curing agent. When the content of the curing accelerator is within this range, the curability of the temporary fixing resin layer and the heat resistance after curing tend to be better.

[0061] The curable resin composition constituting the temporary fixing resin layer 10 may contain a polymerizable monomer having a polymerizable unsaturated group and a polymerization initiator. In this case, the curable resin composition may further contain the above-mentioned hydrocarbon resin.

[0062] The polymerizable monomer is a compound having a polymerizable unsaturated group such as an ethylenically unsaturated group. The polymerizable monomer may be monofunctional, difunctional, or trifunctional or higher functional, but from the viewpoint of obtaining sufficient curability, a difunctional or higher functional polymerizable monomer may be used. Examples of the polymerizable monomer include (meth)acrylate, vinylidene halide, vinyl ether, vinyl ester, vinylpyridine, vinylamide, and arylated vinyl. The polymerizable monomer may be (meth)acrylate or (meth)acrylic acid. The (meth)acrylate may be a monofunctional (meth)acrylate, a bifunctional (meth)acrylate, a trifunctional or higher functional (meth)acrylate, or a combination thereof.

[0063] Examples of monofunctional (meth)acrylates include methyl (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, isobutyl (meth)acrylate, tert-butyl (meth)acrylate, butoxyethyl (meth)acrylate, isoamyl (meth)acrylate, hexyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, heptyl (meth)acrylate, octylheptyl (meth)acrylate, nonyl (meth)acrylate, and decyl (meth)acrylate. 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 3-chloro-2-hydroxypropyl (meth)acrylate, 2-hydroxybutyl (meth)acrylate, methoxypolyethylene glycol (meth)acrylate, ethoxypolyethylene glycol (meth)acrylate, methoxypolypropylene glycol (meth)acrylate, ethoxypolypropylene glycol (meth)acrylate, and mono(2-(meth)acryloyloxyethyl)succinate, etc. Aliphatic (meth)acrylates of the above; and benzyl (meth)acrylate, phenyl (meth)acrylate, o-biphenyl (meth)acrylate, 1-naphthyl (meth)acrylate, 2-naphthyl (meth)acrylate, phenoxyethyl (meth)acrylate, p-cumylphenoxyethyl (meth)acrylate, o-phenylphenoxyethyl (meth)acrylate, 1-naphthoxyethyl (meth)acrylate, 2-naphthoxyethyl (meth)acrylate, phenoxypolyethylene glycol (meth)acrylate, nonylphenoxy polyethylene glycol (meth)acrylate, phenoxy polypropylene glycol (meth)acrylate, 2-hydroxy-3-phenoxypropyl (meth)acrylate, 2-hydroxy-3-(o-phenylphenoxy)propyl (meth)acrylate, 2-hydroxy-3-(1-naphthoxy)propyl (meth)acrylate, and aromatic (meth)acrylates such as 2-hydroxy-3-(2-naphthoxy)propyl (meth)acrylate.

[0064] Examples of bifunctional (meth)acrylates include ethylene glycol di(meth)acrylate, diethylene glycol di(meth)acrylate, triethylene glycol di(meth)acrylate, tetraethylene glycol di(meth)acrylate, polyethylene glycol di(meth)acrylate, propylene glycol di(meth)acrylate, dipropylene glycol di(meth)acrylate, tripropylene glycol di(meth)acrylate, tetrapropylene glycol di(meth)acrylate, polypropylene glycol di(meth)acrylate, ethoxylated polypropylene glycol di(meth)acrylate, 1,3-butanediol di(meth)acrylate, 1,4-butanediol di(meth)acrylate, neopentyl glycol di(meth)acrylate, 3-methyl-1,5-pentanediol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, and 2-butyl-2-ethyl-1,3-propane. Aliphatic (meth)acrylates such as diol di(meth)acrylate, 1,9-nonanediol di(meth)acrylate, 1,10-decanediol di(meth)acrylate, glycerin di(meth)acrylate, tricyclodecane dimethanol (meth)acrylate, and ethoxylated 2-methyl-1,3-propanediol di(meth)acrylate; and ethoxylated bisphenol A di(meth)acrylate, propoxylated bisphenol A di(meth)acrylate, Examples of aromatic (meth)acrylates include ethoxylated propoxylated bisphenol A di(meth)acrylate, ethoxylated bisphenol F di(meth)acrylate, propoxylated bisphenol F di(meth)acrylate, ethoxylated propoxylated bisphenol F di(meth)acrylate, ethoxylated fluorene type di(meth)acrylate, propoxylated fluorene type di(meth)acrylate, and ethoxylated propoxylated fluorene type di(meth)acrylate.

[0065] Examples of the trifunctional or higher polyfunctional (meth)acrylate include trimethylolpropane tri(meth)acrylate, ethoxylated trimethylolpropane tri(meth)acrylate, propoxylated trimethylolpropane tri(meth)acrylate, ethoxylated propoxylated trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, ethoxylated pentaerythritol tri(meth)acrylate, propoxylated pentaerythritol tri(meth)acrylate, ethoxylated propoxylated pentaerythritol tri(meth)acrylate, pentaerythritol tri(meth)acrylate, Aliphatic (meth)acrylates such as erythritol tetra(meth)acrylate, ethoxylated pentaerythritol tetra(meth)acrylate, propoxylated pentaerythritol tetra(meth)acrylate, ethoxylated propoxylated pentaerythritol tetra(meth)acrylate, ditrimethylolpropane tetraacrylate, and dipentaerythritol hexa(meth)acrylate; and aromatic epoxy (meth)acrylates such as phenol novolac epoxy (meth)acrylate and cresol novolac epoxy (meth)acrylate.

[0066] These (meth)acrylates may be used alone or in combination of two or more thereof. These (meth)acrylates may be combined with other polymerizable monomers.

[0067] The content of the polymerizable monomer may be 10 to 60 parts by mass relative to 100 parts by mass of the curable resin composition constituting the temporary fixing resin layer 10.

[0068] The polymerization initiator is a compound that initiates a polymerization reaction of a polymerizable monomer by heating or irradiation with ultraviolet light, etc. For example, when the polymerizable monomer is a compound having an ethylenically unsaturated group, the polymerization initiator may be a thermal radical polymerization initiator, a photoradical polymerization initiator, or a combination thereof.

[0069] Examples of the thermal radical polymerization initiator include diacyl peroxides such as octanoyl peroxide, lauroyl peroxide, stearyl peroxide, and benzoyl peroxide; t-butyl peroxypivalate, t-hexyl peroxypivalate, 1,1,3,3-tetramethylbutylperoxy-2-ethylhexanoate, 2,5-dimethyl-2,5-bis(2-ethylhexanoylperoxy)hexane, t-hexylperoxy-2-ethylhexanoate, t-butylperoxy-2-ethylhexanoate, t-butylperoxyisobutyrate, t-hexylperoxyisopropyl monocarbonate, and t-butylperoxyisopropyl methyl ... peroxyesters such as 2,5-dimethyl-2,5-bis(benzoylperoxy)hexane and 2,2'-azobis(4-methoxy-2'-dimethylvaleronitrile); and azo compounds such as 2,2'-azobisisobutyronitrile, 2,2'-azobis(2,4-dimethylvaleronitrile), and 2,2'-azobis(4-methoxy-2'-dimethylvaleronitrile).

[0070] Examples of the photoradical polymerization initiator include benzoin ketals such as 2,2-dimethoxy-1,2-diphenylethan-1-one; α-hydroxyketones such as 1-hydroxycyclohexyl phenyl ketone, 2-hydroxy-2-methyl-1-phenylpropan-1-one, and 1-[4-(2-hydroxyethoxy)phenyl]-2-hydroxy-2-methyl-1-propan-1-one; and phosphine oxides such as bis(2,4,6-trimethylbenzoyl)phenylphosphine oxide, bis(2,6-dimethoxybenzoyl)-2,4,4-trimethylpentylphosphine oxide, and 2,4,6-trimethylbenzoyldiphenylphosphine oxide.

[0071] These thermal and photoradical polymerization initiators may be used alone or in combination of two or more.

[0072] The content of the polymerization initiator may be 0.01 to 5 parts by mass relative to 100 parts by mass of the total amount of polymerizable monomers.

[0073] The curable resin composition constituting the temporary fixing resin layer 10 may further contain other components such as an insulating filler, a sensitizer, and an antioxidant.

[0074] The insulating filler is added to the curable resin composition to impart low thermal expansion and low moisture absorption. Examples of the insulating filler include non-metallic inorganic fillers such as silica, alumina, boron nitride, titania, glass, and ceramic. These insulating fillers may be used alone or in combination of two or more.

[0075] The content of the insulating filler may be 5 to 20 parts by mass relative to 100 parts by mass of the total mass of the curable resin composition constituting the temporary fixing resin layer 10. When the content of the insulating filler is within this range, the cured temporary fixing resin layer 10 tends to have excellent heat resistance and good releasability.

[0076] Examples of the sensitizer include anthracene, phenanthrene, chrysene, benzopyrene, fluoranthene, rubrene, pyrene, xanthone, indanthrene, thioxanthen-9-one, 2-isopropyl-9H-thioxanthen-9-one, 4-isopropyl-9H-thioxanthen-9-one, and 1-chloro-4-propoxythioxanthone. The content of the sensitizer may be 0.01 to 10 parts by mass with respect to 100 parts by mass of the total mass of the curable resin composition constituting the temporary fixing resin layer 10.

[0077] Examples of the antioxidant include quinone derivatives such as benzoquinone and hydroquinone, phenol derivatives such as 4-methoxyphenol and 4-t-butylcatechol, aminoxyl derivatives such as 2,2,6,6-tetramethylpiperidine-1-oxyl and 4-hydroxy-2,2,6,6-tetramethylpiperidine-1-oxyl, and hindered amine derivatives such as tetramethylpiperidyl methacrylate. The content of the antioxidant may be 0.1 to 10 parts by mass with respect to 100 parts by mass of the total mass of the curable resin composition constituting the temporary fixing resin layer 10.

[0078] The resin varnish used to form the temporary fixing resin layer 10 contains each of the components of the curable resin composition exemplified above and a solvent. The solvent may be a mixed solvent containing two or more solvents. The second main surface 10S2 of the temporary fixing resin layer 10 formed by removing the solvent from a resin varnish containing two or more solvents with different boiling points tends to have a lower viscosity. Examples of the solvent include aromatic solvents such as toluene, xylene, and limonene, and cyclohexanone. The mixed solvent may contain, for example, an aromatic solvent and cyclohexanone. The concentration of components other than the solvent in the resin varnish may be, for example, 10 to 30 mass% based on the mass of the resin varnish. [Example]

[0079] The present invention will be described in more detail below with reference to examples, although the present invention is not limited to these examples.

[0080] 1.Temporary fixing film material The following release films to be used as base films or protective films were prepared. Purex A31B (product name): Light release type, polyethylene terephthalate (PET) film, Toyobo Film Solutions Co., Ltd., thickness: 38 μm Purex A70J (product name): Heavy release type, PET film, Toyobo Film Solutions Co., Ltd., thickness: 38 μm

[0081] A resin varnish was prepared containing 35 parts by weight of maleic anhydride-modified styrene-ethylene-butylene-styrene block copolymer (product name: FG1924GT, Kraton Polymer Japan Co., Ltd., styrene content: 13% by weight), 35 parts by weight of maleic anhydride-modified styrene-ethylene-butylene-styrene block copolymer (product name: FG1901GT, Kraton Polymer Japan Co., Ltd., styrene content: 13% by weight), 15 parts by weight of dicyclopentadiene-type epoxy resin (product name: HP7200, DIC Corporation), 15 parts by weight of naphthalene-type epoxy resin (product name: HP4710, DIC Corporation), 0.8 parts by weight of phenolic antioxidant (product name: AO-60, ADEKA Corporation), and 2 parts by weight of 1-cyanoethyl-2-phenylimidazole (product name: 2PZ-CN, Shikoku Chemicals Corporation), along with toluene and cyclohexanone as solvents. The mass ratio of toluene to cyclohexanone was 1.0:2.6.

[0082] The resulting resin varnish was applied to the release surface of a base film (Purex A31B) using a precision coater, and the solvent was removed from the coating by heating at 90°C for 5 minutes, followed by 100°C for 5 minutes, to produce an 80μm-thick temporary fixing resin layer. A protective film (Purex A70J) was attached to the side of the temporary fixing resin layer opposite the base film, with its release surface facing the temporary fixing resin layer. This produced a temporary fixing film composed of the base film (first release film), temporary fixing resin layer, and protective film (second release film).

[0083] Immediately after preparation of the temporary fixing film material (initial stage), the base film could be peeled off while leaving the temporary fixing resin layer on the protective film side. The base film could also be peeled off in the same way after storing the temporary fixing film material in a refrigerator for one week. On the other hand, in the case of a temporary fixing film material prepared by the same method as above except that the protective film was changed to the light release type A31B, the base film could not be peeled off while leaving the temporary fixing resin layer on the protective film side immediately after preparation.

[0084] 2. Rigid pendulum test The main surface 10S1 of the temporary fixing resin layer on the side of the base film (Purex A31B) and the main surface 10S2 on the side of the protective film (Purex A70J) were evaluated under the following conditions using a rigid pendulum tester (RPT-3000W (product name), A&D company). Temperature range: 25~150℃ Heating rate: 5°C / min Edge: RBP-040 (cylindrical) The measurement results are shown in Figure 7. Figure 7 is a graph showing the relationship between logarithmic decrement and temperature. The maximum logarithmic decrement exhibited by main surface 10S2 on the protective film (second release film) side was smaller than the maximum logarithmic decrement exhibited by main surface 10S2 on the base film (first release film) side. The maximum logarithmic decrement was 0.94 for main surface 10S1 on the base film (first release film) side, and 0.53 for main surface 10S2 on the protective film (second release film) side.

[0085] 3. Evaluation Test 1 A support member with a metal layer was prepared, which had a glass substrate and a metal layer (a laminate of a Ti layer (50 nm thick) / copper layer (200 nm)) formed on the glass substrate by sputtering. The base film or protective film was peeled off from the temporary fixing film material, and the temporary fixing film material was laminated on the metal layer with the exposed main surface 10S1 or 10S2 of the temporary fixing resin layer facing the metal layer. Next, the base film or protective film remaining on the temporary fixing resin layer was peeled off.

[0086] A semiconductor chip having bumps as connection terminals was placed on the exposed main surface 10S1 or 10S2 of the temporary fixing resin layer, and the temporary fixing resin layer was thermally cured in this state to temporarily fix the semiconductor chip so that the bumps were embedded in the temporary fixing resin layer. A sealing layer for sealing the semiconductor chip was formed using a sealant, and a sealing structure with the temporary fixing resin layer attached was formed on the support member with a metal layer.

[0087] The temporary fixing resin layer and the encapsulating structure were peeled off from the support member by irradiation from a xenon lamp under irradiation conditions of an applied voltage of 3800 V, a pulse width of 300 μs, an irradiation distance of 50 mm, one irradiation, and an irradiation time of 200 μs from the glass substrate side. Subsequently, a tensile stress was applied to the temporary fixing resin layer to peel it off from the encapsulating structure, thereby peeling the encapsulating structure from the temporary fixing resin layer. The irradiation distance is the distance between the light source and the stage on which the slide glass was placed. After peeling, the exposed bump-side surface of the semiconductor chip was observed using an optical microscope or a scanning electron microscope. Figure 8 is an optical microscope photograph of the semiconductor chip, and Figure 9 is a scanning electron microscope photograph. In Figures 8 and 9, (a) is a photograph of the semiconductor chip temporarily fixed on the main surface 10S1 of the temporary fixing resin layer on the base film (first release film) side, and (b) is a photograph of the semiconductor chip temporarily fixed on the main surface 10S2 of the temporary fixing resin layer on the protective film (second release film) side. As shown in Figures 8 and 9(a), when the protective film-side main surface 10S2 of the temporary fixing resin layer was bonded to a metal layer and a semiconductor chip was temporarily fixed onto the base film-side main surface 10S1, a large amount of resin residue originating from the temporary fixing resin layer was generated. In the photograph of Figure 9(a), for example, resin residue is observed in the area surrounded by the dashed circle. On the other hand, as shown in Figures 8 and 9(b), when the base film-side main surface 10S1 of the temporary fixing resin layer was bonded to a metal layer and a semiconductor chip was temporarily fixed onto the protective film-side main surface 10S2, no resin residue originating from the temporary fixing resin layer was observed.

[0088] Test 2 Temporary fixing film materials were prepared in the same manner as in Test 1, except that the solvent was changed to a mixed solvent of toluene, limonene, and cyclohexanone (CHN), or a mixed solvent of xylene and cyclohexanone (CHN), and the presence or absence of resin residue on the semiconductor chip was confirmed. For all temporary fixing film materials, no resin residue was observed when a semiconductor chip was temporarily fixed on the main surface 10S2 on the protective film side. The viscosity of each temporary fixing resin layer at 100°C, the storage modulus of the cured temporary fixing resin layer, and the peel strength of the base film and protective film were measured using the following procedures. The measurement results are shown in Table 1.

[0089] viscosity The viscosity of the temporary fixing resin layer was measured under the condition of a temperature rise rate of 10°C / min, and the viscosity at 100°C was determined.

[0090] storage modulus The temporary fixing resin layer was cut to a predetermined size (20 mm length (distance between chucks) × 5.0 mm width) and thermally cured in a clean oven (manufactured by Espec Corporation) at 180°C for 2 hours to obtain a test piece of the cured temporary fixing resin layer. The storage modulus at 25°C and 270°C was measured using viscoelasticity measurements under the following conditions. The results are shown in Table 1. Device name: Dynamic viscoelasticity measuring device (TA Instruments, RSA-G2) Measurement temperature range: -70~300℃ Heating rate: 5°C / min Frequency: 1Hz Measurement mode: Tensile mode

[0091] Peel strength Peel strength was evaluated by measuring the 90° peel strength between the silicon mirror wafer and the temporary fixing resin layer. A 625 μm-thick silicon mirror wafer (6 inches) was placed on the stage of a vacuum laminator (LM-50X50-S, manufactured by NPC Corporation). The release film on the temporary fixing resin layer was peeled off, and the main surface of the temporary fixing film was placed in contact with the silicon mirror wafer. The wafer was heated and pressurized at 120°C and 0.1 MPa for 2 minutes under conditions of 1.5 kPa (15 mbar), followed by vacuum lamination to obtain a sample. The resulting sample was then cured by heating at 200°C for 1 hour. A 10 mm-wide measurement sample was then cut from the sample. A peel test was performed on the measurement sample at a speed of 50 mm / min using a peel tester set to a 90° peel angle. The peel strength was calculated from the test results. Measurements were performed on both the main surface 10S1 and 10S2. The results are shown in Table 1.

[0092] [Table 1] [Explanation of symbols]

[0093] 1...temporary fixing film material, 3...semiconductor member, 4...sealing layer, 10...temporary fixing resin layer, 10S1...first main surface, 10S2...second main surface, 11...first release film, 11S, 12S...release surface, 12...second release film, 15...temporary fixing laminate, 21...support substrate, 21S1...support surface, 21S2...rear surface, 22...light absorbing layer, 50...sealing structure.

Claims

1. forming a temporary fixing laminate comprising a support substrate having a support surface and a back surface opposite the support surface, a light absorbing layer, and a temporary fixing resin layer having a first main surface and a second main surface opposite the first main surface, the light absorbing layer and the temporary fixing resin layer being laminated in this order on the support surface; Temporarily fixing a semiconductor member on the temporary fixing resin layer; irradiating the temporary fixing laminate with light from the back surface side; Separating the semiconductor member from the temporary fixing resin layer; in this order, The temporary fixing laminate is preparing a temporary fixing film material having the temporary fixing resin layer, a first release film, and a second release film, the first release film, the temporary fixing resin layer, and the second release film being laminated in this order in an orientation in which the first release film is in contact with the first main surface of the temporary fixing resin layer and the second release film is in contact with the second main surface of the temporary fixing resin layer; peeling off the first release film from the temporary fixing film material, and laminating the temporary fixing film material on the light absorbing layer provided on the support surface in such a direction that the exposed first main surface of the temporary fixing resin layer is in contact with the light absorbing layer; peeling off the second release film from the temporary fixing film material to expose the second main surface of the temporary fixing resin layer; in that order, The maximum values ​​of the logarithmic attenuation rates in rigid pendulum measurement of the first main surface and the second main surface of the temporary fixing resin layer are δ ｍａｘ 1 and δ ｍａｘ 2, then δ ｍａｘ 2 is δ ｍａｘ less than 1, A method for manufacturing a semiconductor device.

2. 2. The method according to claim 1, wherein the semiconductor member is separated from the temporary fixing resin layer by a method including, in this order, separating the temporary fixing resin layer from the light absorbing layer by irradiating the temporary fixing laminate with light from the back surface side, and peeling the temporary fixing resin layer from the semiconductor member.

3. The method according to claim 1 or 2, further comprising processing the semiconductor member temporarily fixed on the temporary fixing resin layer.

4. The method further comprises forming a sealing layer that seals the semiconductor member on the temporary fixing resin layer, thereby forming a sealing structure having the semiconductor member and the sealing layer. The method according to any one of claims 1 to 3.

5. A method according to any one of claims 1 to 4, wherein the temporary fixing resin layer is a layer containing a curable resin composition, and after the semiconductor member is placed on the temporary fixing resin layer, the temporary fixing resin layer is thermally cured or photocured, thereby temporarily fixing the semiconductor member to the cured temporary fixing resin layer.

6. applying a resin varnish containing a solvent onto a first release film to form a film of the resin varnish, and then removing the solvent from the film to form a temporary fixing resin layer on the first release film, the temporary fixing resin layer having a first main surface in contact with the first release film and a second main surface opposite the first main surface; bonding a second release film to the second main surface of the temporary fixing resin layer; Equipped with the peel strength of the surface of the first release film that contacts the temporary fixing resin layer is smaller than the peel strength of the surface of the second release film that contacts the temporary fixing resin layer; A method for producing a temporary fixing film material.

7. The method according to claim 6, wherein the solvent is a mixed solvent containing two or more solvents.

8. A method according to claim 6 or 7, wherein the temporary fixing resin layer is a layer containing a curable resin composition.

9. a temporary fixing resin layer having a first main surface and a second main surface opposite to the first main surface, a first release film, and a second release film; the first release film, the temporary fixing resin layer, and the second release film are laminated in this order with an orientation in which the first release film is in contact with the first main surface of the temporary fixing resin layer and the second release film is in contact with the second main surface of the temporary fixing resin layer, The maximum values ​​of the logarithmic attenuation rates in rigid pendulum measurement of the first main surface and the second main surface of the temporary fixing resin layer are δ ｍａｘ 1 and δ ｍａｘ 2, then δ ｍａｘ 2 is δ ｍａｘ is less than 1, the peel strength of the surface of the first release film that contacts the temporary fixing resin layer is smaller than the peel strength of the surface of the second release film that contacts the temporary fixing resin layer; Temporary fixing film material.

10. A temporary fixing film material as described in Claim 9, wherein the temporary fixing resin layer is a layer containing a curable resin composition.

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