Bonding method and bonding device

Abstract

To provide a technique capable of controlling wrapping of a polymerization substrate in which a first substrate and a second substrate are joined.SOLUTION: A joint method comprises the steps of: sucking and holding a first substrate by using a first holding prat; sucking and holding a second substrate by using a second holding prat; and forming a polymerization substrate by relatively moving the first holding prat and the second substrate to bring the first substrate and the second substrate into contact with each other. The joint method comprises the steps of: heating the first substrate and the second substrate, or the polymerization substrate; and cooling the heated polymerization substrate by using a cooling part. The cooling controls wrapping of the polymerization substrate by forming a temperature difference in the polymerization substrate.SELECTED DRAWING: Figure 14

Description

[Technical Field]

[0001] The present disclosure relates to a bonding method and a bonding apparatus. [Background technology]

[0002] Patent Document 1 discloses a bonding method in which a substrate to be processed and a support substrate are adsorbed and held by a first holding part and a second holding part arranged opposite each other, and while each substrate is heated by a heating mechanism of each holding part, the second holding part is pressed against the first holding part to bond the substrate to be processed and the support substrate. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2013-65677 Summary of the Invention [Problem to be solved by the invention]

[0004] One aspect of the present disclosure provides a technique capable of controlling warpage of a laminated substrate in which a first substrate and a second substrate are bonded together. [Means for solving the problem]

[0005] A bonding method according to one embodiment of the present disclosure includes: suction-holding a first substrate using a first holding unit; suction-holding a second substrate using a second holding unit; and moving the first and second holding units relative to each other to bring the first and second substrates into contact with each other to form an overlapped substrate. The bonding method according to one embodiment of the present disclosure also includes heating the first and second substrates or the overlapped substrate; and cooling the heated overlapped substrate using a cooling unit. The cooling creates a temperature difference in the overlapped substrate, thereby controlling warping of the overlapped substrate. [Effects of the Invention]

[0006] According to one aspect of the present disclosure, it is possible to control warpage of a laminated substrate in which a first substrate and a second substrate are bonded together. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a schematic plan view showing the configuration of a bonding system according to an embodiment. [Figure 2] FIG. 2 is a schematic side view showing the configuration of the joint system according to the embodiment. [Figure 3] FIG. 3 is a schematic side view of the laminated substrate according to the embodiment. [Figure 4] FIG. 4 is a schematic plan view of the joining device according to the embodiment. [Figure 5] FIG. 5 is a schematic front view of the delivery section and the reversing section according to the embodiment. [Figure 6] FIG. 6 is a schematic side view of the reversing unit according to the embodiment. [Figure 7] FIG. 7 is a schematic side view of the transport unit according to the embodiment. [Figure 8] FIG. 8 is a schematic plan view of a first transport arm of the transport unit according to the embodiment. [Figure 9] FIG. 9 is a schematic plan view of a second transport arm of the transport unit according to the embodiment. [Figure 10] FIG. 10 is a schematic cross-sectional view of a heating unit according to an embodiment. [Figure 11] FIG. 11 is a schematic cross-sectional view of a joint according to an embodiment. [Figure 12] FIG. 12 is a schematic cross-sectional view showing the operation of the joining section according to the embodiment. [Figure 13] FIG. 13 is a flowchart showing the procedure of the bonding method according to the embodiment. [Figure 14] FIG. 14 is a schematic side view showing the configuration of the cooling unit according to the embodiment. [Figure 15] FIG. 15 is a schematic side view showing the configuration of a cooling section according to a first modified example. [Figure 16]FIG. 16 is a schematic side view showing the configuration of a cooling section according to a second modified example. [Figure 17] FIG. 17 is a schematic side view showing the configuration of a cooling section according to a third modified example. [Figure 18] FIG. 18 is a schematic side view showing the configuration of a cooling section according to a fourth modified example. [Figure 19] FIG. 19 is a schematic side view showing the configuration of a cooling section according to a fifth modified example. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, a detailed description will be given of a bonding method and a bonding apparatus according to the present disclosure (hereinafter referred to as an "embodiment") with reference to the drawings. Note that the present disclosure is not limited to the embodiment. Furthermore, the embodiments can be appropriately combined as long as the processing contents are not contradictory. Furthermore, the same components in the following embodiments are denoted by the same reference numerals, and redundant description will be omitted.

[0009] Furthermore, in the following embodiments, expressions such as "constant," "orthogonal," "perpendicular," or "parallel" may be used, but these expressions do not necessarily mean "constant," "orthogonal," "perpendicular," or "parallel" in the strict sense. In other words, the above expressions allow for deviations due to, for example, manufacturing precision, installation precision, etc.

[0010] In addition, for ease of understanding, the drawings referred to below may show an orthogonal coordinate system in which the X-axis, Y-axis, and Z-axis directions are defined as being orthogonal to each other, with the positive Z-axis direction being the vertically upward direction. Also, the direction of rotation around the vertical axis may be referred to as the θ direction.

[0011] First, a bonding system 1 according to the present embodiment will be described with reference to Fig. 1 to Fig. 3. Fig. 1 is a schematic plan view showing the configuration of the bonding system according to the embodiment. Fig. 2 is a schematic side view showing the configuration of the bonding system according to the embodiment. Fig. 3 is a schematic side view of a laminated substrate according to the embodiment.

[0012] 1 and 2 forms a laminated substrate T by bonding a target substrate W and a support substrate S via an adhesive G, as shown in Fig. 3. The target substrate W is an example of a first substrate, and the support substrate S is an example of a second substrate.

[0013] The substrate W to be processed includes, for example, a glass substrate Wa and a resin layer Wb formed on the glass substrate Wa. A plurality of electronic circuits may be formed in advance on the surface of the glass substrate Wa on which the resin layer Wb is formed. Of the surfaces of the substrate W to be processed, the surface facing the support substrate S is referred to as the "bonding surface Wj," and the surface opposite the bonding surface Wj is referred to as the "non-bonding surface Wn." The bonding surface Wj is the surface of the resin layer Wb, and the non-bonding surface Wn is the surface of the glass substrate Wa. After the substrate W to be processed and the support substrate S are bonded, the glass substrate Wa is thinned by polishing.

[0014] The resin layer Wb is formed, for example, by applying a resin composition onto the glass substrate Wa and heating the applied resin composition, after which the resin layer Wb is cooled to room temperature.

[0015] After the resin layer Wb is formed, the difference in thermal expansion between the resin layer Wb and the glass substrate Wa during the cooling process may cause the processed substrate W to warp. When a glass substrate Wa is used as the base material for the resin layer Wb, the difference in thermal expansion between the resin layer Wb and the base material is greater than when a silicon substrate or the like is used instead of the glass substrate Wa, resulting in greater warping.

[0016] In this embodiment, as will be described in detail later, a heating unit 130 that heats the workpiece substrate W before bonding the workpiece substrate W and the support substrate S is provided inside the bonding apparatus 80. Therefore, warping that occurs in the process of cooling the resin layer Wb after its formation can be reduced immediately before bonding. As a result, the accuracy of horizontal alignment of the workpiece substrate W and the support substrate S immediately before bonding can be improved, and bonding accuracy can be improved.

[0017] The support substrate S is a substrate having approximately the same diameter as the substrate W to be processed, and supports the substrate W to be processed. For example, a glass substrate is used as the support substrate S. Of the surfaces of the support substrate S, the surface facing the substrate W to be processed is referred to as the "bonding surface Sj," and the surface opposite the bonding surface Sj is referred to as the "non-bonding surface Sn."

[0018] The adhesive G is, for example, a thermosetting resin adhesive. Thermosetting refers to the property of being difficult to deform at room temperature (for example, about 20°C), but softening and becoming easier to mold when heated, and further heating causes polymerization to progress and harden so that it does not return to its original state. The adhesive G used has, for example, a softening temperature of about 120 to 140°C and a hardening temperature of about 180°C. The adhesive G may have multiple structures.

[0019] 1, the bonding system 1 includes a loading / unloading station 2 and a processing station 3. The loading / unloading station 2 and the processing station 3 are integrally connected in this order in the positive direction of the X-axis.

[0020] The loading / unloading station 2 includes a cassette mounting table 10 and a first transfer area 11. The cassette mounting table 10 is a location where cassettes Cw, Cs, and Ct, each storing a plurality of substrates (e.g., 25 substrates) in a horizontal position, are mounted. The loading / unloading station 2 has, for example, four mounting sections 12 arranged in a row. Each mounting section 12 mounts, for example, a cassette Cw that stores a substrate to be processed W, a cassette Cs that stores a support substrate S, and a cassette Ct that stores a laminated substrate T. In addition to the cassettes Cw, Cs, and Ct, the mounting sections 12 may also mount, for example, a cassette Cp for recovering a defective substrate.

[0021] In the first transfer region 11, there are disposed a transfer path 13 extending in the X-axis direction and a first transfer device 14 movable along the transfer path 13. The first transfer device 14 is also movable in the Y-axis direction and rotatable around the Z-axis, and transfers the substrate to be processed W, the support substrate S, and the superimposed substrate T between the cassettes Cw, Cs, and Ct placed on the placement unit 12 and a transition device 30 of the processing station 3, which will be described later.

[0022] The processing station 3 includes a second transfer region 20, a transition device 30, a coating device 40, a heat treatment device 50, and a bonding device 80. The transition device 30, the coating device 40, the heat treatment device 50, and the bonding device 80 are arranged side by side around the periphery of the second transfer region 20. The arrangement and number of these devices can be set as desired.

[0023] A second transfer device 21 is disposed in the second transfer region 20. The second transfer device 21 is movable in the X-axis direction, the Y-axis direction, and the Z-axis direction and rotatable around the Z-axis, and transfers the substrate to be processed W, the support substrate S, and the overlapped substrate T between the transition device 30, the coating device 40, the heat treatment device 50, and the bonding device 80.

[0024] The transition device 30 is disposed between the first transfer region 11 and the second transfer region 20. The first transfer device 14 and the second transfer device 21 transfer the substrate to be processed W, the support substrate S, and the overlapped substrate T via the transition device 30. The transition device 30 includes a cooling unit that cools the overlapped substrate T. This will be described later. In this embodiment, the transition device 30 includes the cooling unit, but the cooling unit may be provided separately from the transition device 30.

[0025] The coating device 40 coats the bonding surface Sj of the support substrate S with adhesive G. The heat treatment device 50 heats the support substrate S coated with adhesive G to a predetermined temperature, thereby vaporizing the organic solvent contained in the adhesive G. The bonding device 80 bonds the workpiece substrate W and the support substrate S via the adhesive G.

[0026] The bonding system 1 includes a control device 90. The control device 90 is, for example, a computer, and includes a CPU (Central Processing Unit) 91 and a storage unit 92 such as a memory. The storage unit 92 stores programs that control various processes executed in the bonding system 1. The control device 90 controls the operation of the bonding system 1 by causing a control unit 91 to execute the programs stored in the storage unit 92.

[0027] 1 and 2, the operation of the bonding system 1 will be briefly described. In the bonding system 1, first, a cassette Cw containing a plurality of substrates W to be processed, a cassette Cs containing a plurality of support substrates S, and an empty cassette Ct are placed on the placement unit 12 of the carry-in / out station 2, respectively.

[0028] Thereafter, the first transfer device 14 takes out the support substrate S from the cassette Cs and transfers it to the transition device 30 of the processing station 3. At this time, the support substrate S is transferred with the bonding surface Sj facing upward. The support substrate S transferred to the transition device 30 is then taken out of the transition device 30 by the second transfer device 21 and transferred to the coating device 40.

[0029] Next, the coating device 40 coats the adhesive G on the bonding surface Sj of the support substrate S. Thereafter, the support substrate S is taken out of the coating device 40 by the second transfer device 21 and then transferred to the heat treatment device 50.

[0030] Next, the heat treatment device 50 heats the support substrate S to a predetermined temperature. This evaporates the organic solvent contained in the adhesive G applied to the support substrate S. The adhesive G from which the organic solvent has evaporated becomes hard enough to not drip even when the support substrate S is tilted. Thereafter, the support substrate S is removed from the heat treatment device 50 by the second transfer device 21 and then transferred to the bonding device 80.

[0031] While the above-mentioned processing is being performed, the substrate W to be processed is removed from the cassette Cw by the first transfer device 14 and transferred to the transition device 30 of the processing station 3. At this time, the substrate W to be processed is transferred with the bonding surface Wj facing upward. The substrate W to be processed transferred to the transition device 30 is then removed from the transition device 30 by the second transfer device 21 and transferred to the bonding device 80.

[0032] When the loading of the substrate to be processed W and the support substrate S into the bonding device 80 is completed, the substrate to be processed W and the support substrate S are bonded together by the bonding device 80, and a laminated substrate T is formed.

[0033] Next, the laminated substrate T is removed from the bonding device 80 by the second transfer device 21, and then transferred to the transition device 30, where it is cooled by a cooling unit provided in the transition device 30. Thereafter, the laminated substrate T is removed from the transition device 30 by the first transfer device 14, and stored in the cassette Ct. In this way, the series of bonding processes is completed.

[0034] Next, an example of the joining device 80 will be described with reference to Fig. 4. Fig. 4 is a schematic plan view of the joining device 80 according to the embodiment.

[0035] 4, the bonding apparatus 80 includes a processing container 100 whose interior can be sealed. A loading / unloading port 101 is formed on the side of the processing container 100 facing the second transfer region 20, through which the substrate to be processed W, the support substrate S, and the laminated substrate T pass. The loading / unloading port 101 is provided with an opening / closing shutter (not shown).

[0036] An inner wall 102 may be provided inside the processing vessel 100 to divide the area inside the processing vessel 100 into a pre-processing area D1 and a bonding area D2. The inner wall 102 is formed with a loading / unloading port 103 through which the substrate to be processed W, the support substrate S, and the laminated substrate T pass, and the loading / unloading port 103 is provided with an opening / closing shutter (not shown).

[0037] The pre-processing area D1 is provided with a transfer section 110 for transferring the substrate to be processed W, the support substrate S, and the laminated substrate T between the bonding apparatus 80 and the outside. The transfer section 110 is disposed adjacent to the carry-in / out port 101.

[0038] The delivery section 110 includes a delivery arm 111 and support pins 112. The delivery arm 111 delivers the substrate to be processed W, the support substrate S, and the overlapped substrate T between the second transfer device 21 (see FIG. 1) and the support pins 112. A plurality of support pins 112, for example, three support pins 112 are provided at three locations and support the substrate to be processed W, the support substrate S, and the overlapped substrate T.

[0039] As will be described later, the passing parts 110 are arranged in multiple vertical rows, for example, in two rows, and can simultaneously transfer any two of the workpiece substrate W, the support substrate S, and the overlapped substrate T. For example, one passing part 110 may transfer the workpiece substrate W or the support substrate S before bonding, and another passing part 110 may transfer the overlapped substrate T after bonding. Alternatively, one passing part 110 may transfer the workpiece substrate W before bonding, and another passing part 110 may transfer the support substrate S before bonding.

[0040] An inversion unit 120 that turns, for example, the support substrate S upside down is provided above the delivery unit 110. The inversion unit 120 includes a holding arm 121 that clamps and holds the substrate to be processed W or the support substrate S. The holding arm 121 extends in the horizontal direction (the X-axis direction in FIG. 4), is rotatable about the horizontal axis, and is movable in the horizontal direction (the X-axis direction and the Y-axis direction) and the vertical direction (the Z-axis direction).

[0041] The inversion unit 120 also includes an adjustment mechanism that adjusts the horizontal orientation of the target substrate W or support substrate S. The adjustment mechanism includes a detection unit 122 that detects the position of a notch in the target substrate S or support substrate W. In the inversion unit 120, the detection unit 122 detects the position of the notch in the target substrate S or support substrate W while the target substrate S or support substrate W held by the holding arm 121 is moved in the horizontal direction. As a result, the inversion unit 120 adjusts the position of the notch to adjust the horizontal orientation of the target substrate S or support substrate W.

[0042] On the negative side of the X-axis of the bonding area D2, a heating section 130 for heating the substrate W to be processed is provided. The heating section 130 heats the substrate W to be processed, thereby reducing warpage of the substrate W to be processed.

[0043] On the negative Y-axis direction side of the bonding region D2, there is provided a transport unit 140 that transports the workpiece substrate W, the support substrate S, and the laminated substrate T to the delivery unit 110, the reversing unit 120, the heating unit 130, and the bonding unit 150 (described later). The transport unit 140 is disposed adjacent to the loading / unloading port 103.

[0044] The transfer unit 140 includes, for example, a first transfer arm 141 and a second transfer arm 142. The first transfer arm 141 and the second transfer arm 142 are arranged in two stages in this order from bottom to top in the vertical direction, and can be moved in the horizontal and vertical directions by a drive unit (not shown).

[0045] The first transfer arm 141 holds and transfers, for example, the lower surface (non-bonding surface Wn) of the substrate to be processed W or the lower surface (non-bonding surface Wn) of the support substrate S. On the other hand, the second transfer arm 142 holds and transfers the outer periphery of the lower surface (bonding surface Sj) of the support substrate S that has been turned upside down in the inversion unit 120.

[0046] A bonding unit 150 that bonds the substrate to be processed W and the support substrate S is provided on the positive side of the bonding region D2 in the Y-axis direction. The bonding unit 150 bonds the substrate to be processed W and the support substrate S to form a laminated substrate T. The formed laminated substrate T is transported from the bonding unit 150 to the delivery unit 110 by the first transport arm 141 of the transport unit 140, and then delivered to the delivery arm 111 via the support pins 112, and further delivered from the delivery arm 111 to the second transport device 21.

[0047] Next, an example of the delivery unit 110 will be described with reference to Fig. 5. As described above, the delivery unit 110 includes the delivery arm 111 and the support pins 112. The delivery arm 111 delivers the substrate to be processed W, the support substrate S, or the overlapped substrate T between the second transfer device 21 and the support pins 112. A plurality of support pins 112, for example, three support pins 112 are provided and support the substrate to be processed W, the support substrate S, or the overlapped substrate T.

[0048] The delivery unit 110 includes an arm driver 113. The arm driver 113 includes a motor and moves the delivery arm 111 in the X-axis direction. The arm driver 113 is moved in the Y-axis direction along a rail 114 (see FIG. 4). The delivery arm 111 is movable in the horizontal direction (X-axis direction and Y-axis direction). The arm driver 113 may also move the delivery arm 111 in the Z-axis direction.

[0049] 5, a plurality of support pins 115, for example, four support pins 115 are provided on the delivery arm 111 to support the lower surface of the substrate to be processed W, support substrate S, or overlapped substrate T. Also, a guide 116 is provided on the delivery arm 111 to position the substrate to be processed W, support substrate S, or overlapped substrate T supported by the support pins 115. A plurality of guides 116, for example, four guides 116 are provided to guide the side surfaces of the substrate to be processed W, support substrate S, or overlapped substrate T.

[0050] The delivery units 110 are arranged in two vertical stages, and the reversal unit 120 is arranged vertically above these delivery units 110. The delivery arm 111 of the delivery unit 110 moves horizontally below the holding arm 121 of the reversal unit 120 and the adjustment mechanism 126. In addition, the support pin 112 of the delivery unit 110 is arranged below the holding arm 121 of the reversal unit 120.

[0051] Next, an example of the inversion unit 120 will be described with reference to Figures 5 and 6. As described above, the inversion unit 120 includes the holding arm 121 and the detection unit 122. The inversion unit 120 also includes a first drive unit 123. The first drive unit 123 includes a motor and the like, and rotates the holding arm 121 around a horizontal axis and moves it horizontally (in the X-axis direction and the Y-axis direction). Note that the first drive unit 123 may move the holding arm 121 in the horizontal direction by rotating the holding arm 121 around a vertical axis.

[0052] A second drive unit 124 including, for example, a motor is provided below the first drive unit 123. The second drive unit 124 moves the first drive unit 123 in the vertical direction along the support column 125. The first drive unit 123 and the second drive unit 124 enable the holding arm 121 to rotate around a horizontal axis and move in the vertical and horizontal directions.

[0053] An adjustment mechanism 126 is supported on the support column 125 via a support plate 127. The adjustment mechanism 126 is provided adjacent to the holding arm 121. The adjustment mechanism 126 adjusts the horizontal orientation of the support substrate S or the substrate to be processed W held by the holding arm 121.

[0054] The adjustment mechanism 126 has a base 128 and a detection unit 122. The adjustment mechanism 126 detects the position of the notch of the support substrate S or the substrate to be processed W using the detection unit 122 while horizontally moving the support substrate S or the substrate to be processed W held by the holding arm 121. In this way, the adjustment mechanism 126 adjusts the position of the notch to adjust the horizontal orientation of the support substrate S or the substrate to be processed W.

[0055] Next, an example of the transfer unit 140 will be described with reference to Figs. 7 to 9. Fig. 7 is a schematic side view of the transfer unit according to the embodiment. Fig. 8 is a schematic plan view of a first transfer arm of the transfer unit according to the embodiment. Fig. 9 is a schematic plan view of a second transfer arm of the transfer unit according to the embodiment.

[0056] 7, as described above, the transfer unit 140 includes a first transfer arm 141 and a second transfer arm 142. The first transfer arm 141 and the second transfer arm 142 are arranged in two stages in this order from bottom to top in the vertical direction. The first transfer arm 141 and the second transfer arm 142 may have different shapes, as will be described later.

[0057] An arm driver 143 including, for example, a motor is provided at the base end of the first transfer arm 141 and the second transfer arm 142. The arm driver 143 moves the first transfer arm 141 and the second transfer arm 142 independently in the horizontal direction. The first transfer arm 141, the second transfer arm 142, and the arm driver 143 are supported on a base 144. The base 144 can be moved in the vertical direction by a driver (not shown) including, for example, a motor.

[0058] 8, the first transfer arm 141 holds and transfers the lower surface (non-bonding surfaces Wn, Sn of the substrate W, the support substrate S, or the overlapped substrate T) of the substrate to be processed W, the support substrate S, or the overlapped substrate T. The first transfer arm 141 is forked at the tip.

[0059] A plurality of resin O-rings 145 are provided on the first transfer arm 141, for example, at four locations. The O-rings 145 come into contact with the lower surfaces of the substrate to be processed W, the support substrate S, or the overlapped substrate T, and hold these lower surfaces by friction. The first transfer arm 141 holds the substrate to be processed W, the support substrate S, or the overlapped substrate T horizontally on the O-rings 145.

[0060] Furthermore, for example, a first guide 146 and a second guide 147 are provided on the first transfer arm 141, outside the workpiece substrate W, support substrate S, or overlapping substrate T held by the O-ring 145. The first guide 146 is provided at the bifurcated tip of the first transfer arm 141. The second guide 147 is formed in an arc shape on the opposite side of the workpiece substrate W, support substrate S, or overlapping substrate T from the first guide 146, with the workpiece substrate W, support substrate S, or overlapping substrate T in between. The first guide 146 and the second guide 147 prevent the workpiece substrate W, support substrate S, or overlapping substrate T from coming off the first transfer arm 141. Note that when the workpiece substrate W, support substrate S, or overlapping substrate T is held in an appropriate position by the O-ring 145, the workpiece substrate W, support substrate S, or overlapping substrate T does not come into contact with the first guide 146 and the second guide 147.

[0061] 9, the second transfer arm 142 transfers the support substrate S by holding the outer periphery of the lower surface (bonding surface Sj). That is, the second transfer arm 142 transfers the support substrate S by holding the outer periphery of the bonding surface Sj that has been turned upside down by the inverting unit 120. The second transfer arm 142 is forked at the tip.

[0062] A plurality of holders 148, for example, four holders 148 are provided on the second transfer arm 142. Each holder 148 has a horizontal surface on which the outer periphery of the bonding surface Sj of the support substrate S is placed, and a tapered surface that slopes radially outward of the support substrate S as it extends upward from the horizontal surface. The tapered surface determines the horizontal position of the support substrate S. The second transfer arm 142 holds the support substrate S horizontally on the holders 148. The second transfer arm 142 holds the outer periphery of the bonding surface Sj of the support substrate S. This makes it possible to prevent the bonding surface Sj from becoming contaminated by particles adhering to the second transfer arm 142, for example.

[0063] Next, an example of the heating unit 130 will be described with reference to Fig. 10. The heating unit 130 includes, for example, a heating plate 131, an annular holder 132 that houses the heating plate 131 and holds the outer periphery of the heating plate 131, and a substantially cylindrical support ring 133 that surrounds the outer periphery of the holder 132.

[0064] Support pins 134 are provided at multiple locations, for example, three locations, on the hot plate 131. The support pins 134 support the substrate W to be processed and form a gap between the substrate W to be processed and the hot plate 131. The size H1 of the gap is, for example, 0.4 mm or more.

[0065] The hot plate 131 has a substantially disk shape and heats the substrate W to be processed via support pins 134. The hot plate 131 has, for example, a built-in heating mechanism 135. The heating mechanism 135 includes, for example, a heater. The heating temperature of the hot plate 131 is controlled, for example, by the control device 90, and the substrate W to be processed placed on the hot plate 131 is heated to a predetermined temperature.

[0066] Below the hot plate 131, for example, three lifting pins 136 are provided to support and lift the substrate W from below. The lifting pins 136 can be moved up and down by a lifting drive unit 137. Near the center of the hot plate 131, for example, three through holes 138 are formed that penetrate the hot plate 131 in the thickness direction. The lifting pins 136 are inserted through the through holes 138 and can protrude from the top surface of the hot plate 131.

[0067] Next, the joint portion 150 will be described with reference to Figures 11 and 12. The joint portion 150 includes a first holding portion 151 and a second holding portion 152 disposed above the first holding portion 151 and facing the first holding portion 151.

[0068] The first holding part 151 and the second holding part 152 are, for example, electrostatic chucks, and hold the workpiece substrate W and the support substrate S by electrostatic adsorption. The first holding part 151 holds the workpiece substrate W from below, and the second holding part 152 holds the support substrate S from above. The workpiece substrate W and the support substrate S are held by the first holding part 151 and the second holding part 152 with their bonding surfaces Wj, Sj facing each other.

[0069] In addition, the first holding portion 151 and the second holding portion 152 may be provided with a vacuum suction portion that vacuum-sucks the support substrate S and the substrate to be processed W in addition to, or instead of, the electrostatic suction portion that electrostatically suctions the support substrate S and the substrate to be processed W.

[0070] The bonding unit 150 includes a first heating mechanism 153 and a second heating mechanism 154. The first heating mechanism 153 is built into the first holding unit 151, and heats the first holding unit 151, thereby heating the substrate W to be processed held by the first holding unit 151 to a predetermined temperature. The second heating mechanism 154 is built into the second holding unit 152, and heats the second holding unit 152, thereby heating the support substrate S held by the second holding unit 152 to a predetermined temperature.

[0071] The bonding unit 150 includes a moving mechanism 155. The moving mechanism 155 moves the second holding unit 152 vertically downward, thereby bringing the support substrate S into contact with the substrate to be processed W and applying pressure. Note that the moving mechanism 155 only needs to move the first holding unit 151 and the second holding unit 152 relative to each other, and may also move the first holding unit 151. The moving mechanism 155 includes a base member 156, a pressure vessel 157, a gas supply pipe 158, and a gas supply source 159. The base member 156 is attached to the ceiling surface inside a second chamber unit 162, which will be described later.

[0072] Pressure vessel 157 is formed, for example, by a stainless steel bellows that is expandable and contractible in the vertical direction. The lower end of pressure vessel 157 is fixed to the upper surface of second holding portion 152, and the upper end of pressure vessel 157 is fixed to the lower surface of base member 156. One end of gas supply pipe 158 is connected to pressure vessel 157 via base member 156 and second chamber portion 162, which will be described later, and the other end is connected to gas supply source 159.

[0073] The pressure vessel 157 extends and the second holding unit 152 descends by supplying gas from a gas supply source 159 into the pressure vessel 157 via a gas supply pipe 158. As a result, the support substrate S comes into contact with the substrate to be processed W and is pressurized. The pressure applied to the substrate to be processed W and the support substrate S is adjusted by adjusting the pressure of the gas supplied to the pressure vessel 157.

[0074] The joining section 150 includes a chamber 160 , a position adjustment section 170 , a pressure reduction section 180 , a first imaging section 191 , and a second imaging section 192 .

[0075] Chamber 160 is a processing container whose interior can be sealed, and includes a first chamber section 161 and a second chamber section 162. First chamber section 161 is a cylindrical container with a bottom that is open at the top, and accommodates first holding section 151 and the like inside. Second chamber section 162 is a cylindrical container with a bottom that is open at the bottom, and accommodates second holding section 152, pressure vessel 157, and the like inside.

[0076] The second chamber section 162 is configured to be able to move up and down in the vertical direction by a lifting mechanism (not shown), such as an air cylinder. The lifting mechanism lowers the second chamber section 162 so that it abuts against the first chamber section 161, thereby forming an airtight space inside the chamber 160. A seal member 163 is provided on the abutting surface of the second chamber section 162 with the first chamber section 161 to ensure the airtightness of the chamber 160. An O-ring, for example, is used as the seal member 163.

[0077] The position adjustment units 170 are provided on the outer periphery of the second chamber unit 162 and move the second holding unit 152 in the horizontal direction via the second chamber unit 162. A plurality of (for example, five) position adjustment units 170 are provided on the outer periphery of the second chamber unit 162, and four of the five position adjustment units 170 are used to move the second holding unit 152 in the horizontal direction, and the remaining one is used to rotate the second holding unit 152 about the vertical axis.

[0078] Position adjustment unit 170 includes cam 171 that abuts against the outer periphery of second chamber unit 162 to move second holding unit 152, and rotation drive unit 173 that rotates cam 171 via shaft 172. Cam 171 is provided eccentrically with respect to the central axis of shaft 172. By rotating cam 171 with rotation drive unit 173, the central position of cam 171 relative to second holding unit 152 moves, and second holding unit 152 can be moved in the horizontal direction.

[0079] The pressure reducing section 180 is provided, for example, below the first chamber section 161, and reduces the pressure inside the chamber 160. The pressure reducing section 180 includes an intake pipe 181 for drawing in the atmosphere inside the chamber 160, and an intake device 182 such as a vacuum pump connected to the intake pipe 181.

[0080] The first imaging unit 191 is disposed below the second holding unit 152 and captures an image of the lower surface (bonding surface Sj) of the support substrate S held by the second holding unit 152. The second imaging unit 192 is disposed above the first holding unit 151 and captures an image of the upper surface (bonding surface Wj) of the substrate W to be processed held by the first holding unit 151.

[0081] The first imaging unit 191 and the second imaging unit 192 are configured to be movable in the horizontal direction by a moving mechanism (not shown), and enter the chamber 160 before the second chamber section 162 is lowered to capture images of the substrate to be processed W and the support substrate S. The imaging data of the first imaging unit 191 and the second imaging unit 192 are transmitted to the control device 90. Note that, for example, wide-angle CCD cameras are used as the first imaging unit 191 and the second imaging unit 192, respectively.

[0082] Next, an example of the operation of the bonding device 80 will be described with reference to Fig. 13. When the substrate W to be processed is delivered to the delivery arm 111 of the delivery section 110 by the second transfer device 21 (see Fig. 1), the delivery arm 111 delivers the substrate W to the support pins 112. Thereafter, the substrate W to be processed is transported from the support pins 112 to the reversal section 120 by the first transport arm 141 of the transport section 140.

[0083] The notch position of the substrate W to be processed transported to the inversion unit 120 is detected by the detection unit 122 of the inversion unit 120, and the horizontal orientation is adjusted (step S101). Thereafter, the substrate W to be processed is transported from the inversion unit 120 to the heating unit 130 by the first transport arm 141 of the transport unit 140.

[0084] The substrate W to be processed that has been transported to the heating unit 130 is heated to a predetermined temperature by the hot plate 131 of the heating unit 130 (step S102). This reduces warping of the substrate W to be processed. Thereafter, the substrate W to be processed is transported from the heating unit 130 to the first holding unit 151 of the bonding unit 150 by the first transport arm 141 of the transport unit 140, and is held by suction by the first holding unit 151 (step S103). The first holding unit 151 has been heated in advance to a desired temperature by the first heating mechanism 153.

[0085] On the other hand, when the support substrate S is delivered to the delivery arm 111 of the delivery section 110 by the second transport device 21 (see FIG. 1), the delivery arm 111 delivers the support substrate S to the support pins 112. Thereafter, the support substrate S is transported from the support pins 112 to the inversion section 120 by the first transport arm 141 of the transport section 140.

[0086] The support substrate S transported to the inverting unit 120 has the notch position detected by the detecting unit 122 of the inverting unit 120, and the horizontal orientation is adjusted (step S104). Thereafter, the support substrate S is turned upside down by the inverting unit 120 (step S105). As a result, the bonding surface Sj of the support substrate S faces downward.

[0087] Thereafter, the support substrate S is transported from the inverting unit 120 to the second holding unit 152 of the bonding unit 150 by the second transport arm 142 of the transport unit 140, and is adsorbed and held by the second holding unit 152 (step S106). The second holding unit 152 is heated in advance to a desired temperature by the second heating mechanism 154.

[0088] Once the loading of the substrate W and the support substrate S into the bonding unit 150 is complete, the substrate W and the support substrate S are aligned in the horizontal direction (step S107). A plurality of reference points are formed in advance on the substrate W and the support substrate S. The bonding unit 150 horizontally moves the first imaging unit 191 and the second imaging unit 192 shown in FIG. 11 to capture images of the reference points on the substrate W and the support substrate S, respectively. The bonding unit 150 adjusts the horizontal position of the support substrate S using the position adjustment unit 170 so that the positions of the reference points included in the image captured by the first imaging unit 191 and the image captured by the second imaging unit 192 match. That is, the horizontal position of the support substrate S is adjusted by rotating the cam 171 using the rotation drive unit 173 to move the second holding unit 152 in the horizontal direction via the second chamber unit 162.

[0089] Thereafter, the joining unit 150 causes the first imaging unit 191 and the second imaging unit 192 to leave the chamber 160, and then lowers the second chamber unit 162. As a result, the second chamber unit 162 abuts against the first chamber unit 161, and an airtight space is formed within the chamber 160. Thereafter, the joining unit 150 reduces the pressure within the chamber 160 by using the pressure reducing unit 180 to suck in the atmosphere within the chamber 160.

[0090] Next, the bonding unit 150 uses the moving mechanism 155 to lower the second holding unit 152 so that the substrate to be processed W and the support substrate S come into contact with each other (step S108). Furthermore, the bonding unit 150 supplies gas to the pressure vessel 157 to set the pressure inside the pressure vessel 157 to a desired pressure, thereby pressurizing the substrate to be processed W and the support substrate S (step S109).

[0091] The adhesive G applied to the bonding surface Sj of the support substrate S is softened by heating, and the support substrate S is pressed against the substrate to be processed W at a desired pressure for a predetermined time, thereby bonding the substrate to be processed W and the support substrate S to form a laminated substrate T. At this time, the inside of the chamber 160 is in a reduced pressure atmosphere, so that the generation of air bubbles between the substrate to be processed W and the support substrate S can be suppressed.

[0092] Thereafter, the laminated substrate T is transported from the bonding unit 150 to the delivery unit 110 by the first transport arm 141 of the transport unit 140, and then delivered to the delivery arm 111 via the support pins 112, and further delivered from the delivery arm 111 to the second transport device 21. The second transport device 21 carries the laminated substrate T out of the bonding device 80 (step S110).

[0093] According to this embodiment, a heating unit 130 is provided inside the bonding apparatus 80, and the heating unit 130 heats the substrate W to be processed before the bonding unit 150 bonds the substrate W to the support substrate S. By heating the substrate W to be processed by the heating unit 130, warping of the substrate W that occurs during the cooling process is reduced. Thereafter, if the substrate W to be processed is sucked and held by the first holding unit 151, the horizontal alignment accuracy of the substrate W to be processed and the support substrate S can be improved. Therefore, bonding accuracy can be improved.

[0094] The laminated substrate T unloaded from the bonding device 80 is transported to the transition device 30 by the second transport device 21. The transition device 30 is provided with a cooling unit, and the laminated substrate T is cooled by the cooling unit.

[0095] The warpage of the laminated substrate T is reduced immediately after it is carried into the transition device 30. However, the laminated substrate T may warp again as cooling progresses.

[0096] Therefore, in the bonding system 1, when the cooling unit cools the laminated substrate T, the cooling unit is controlled so as to create a temperature difference in the laminated substrate T, thereby controlling the warpage of the laminated substrate T.

[0097] 14 is a schematic side view showing the configuration of a cooling unit according to the embodiment. As shown in FIG. 14, a cooling unit 300 according to the embodiment includes a first cooling plate 301, a second cooling plate 302, a first temperature adjustment unit 303, a second temperature adjustment unit 304, and a monitoring unit 305.

[0098] The first cooling plate 301 and the second cooling plate 302 are so-called cooling plates. The first cooling plate 301 is disposed below the superposed substrate T, and the second cooling plate 302 is disposed above the superposed substrate T. That is, the first cooling plate 301 and the second cooling plate 302 are disposed opposite each other so as to sandwich the superposed substrate T. The surfaces of the first cooling plate 301 and the second cooling plate 302 facing the superposed substrate T are larger than the front and back surfaces of the superposed substrate T. That is, the first cooling plate 301 and the second cooling plate 302 cool the entire front and back surfaces of the superposed substrate T.

[0099] Here, an example is shown in which the superposed substrate T is placed on the first cooling plate 301, but the superposed substrate T may also be placed between the first cooling plate 301 and the second cooling plate 302 while being spaced apart from both the first cooling plate 301 and the second cooling plate 302. In this case, the cooling unit 300 only needs to include a holder that holds the superposed substrate T. The holder may be, for example, three pins that support the lower surface of the superposed substrate T, or a holder that grips the outer periphery of the superposed substrate T.

[0100] A temperature control element 301a is provided inside the first cooling plate 301. Similarly, a temperature control element 302a is provided inside the second cooling plate 302. The temperature control element 301a and the temperature control element 302a are, for example, Peltier elements. The temperature control element 301a is connected to a first temperature control unit 303, and the temperature control element 302a is connected to a second temperature control unit 304. The first temperature control unit 303 and the second temperature control unit 304 are, for example, power supply units that supply power to the temperature control elements 301a and 302a under the control of the control unit 91. As a result, the temperature of the upper surface of the first cooling plate 301 (the surface facing the laminated substrate T) is lowered by the temperature control element 301a. Furthermore, the temperature of the lower surface of the second cooling plate 302 (the surface facing the laminated substrate T) is lowered by the temperature control element 302a.

[0101] The monitoring unit 305 monitors the warpage of the laminated substrate T. The monitoring unit 305 may be, for example, a camera, a laser interferometer, or a laser displacement meter. The monitoring unit 305 transmits measurement data of the warpage to the control unit 91.

[0102] The control unit 91 cools the laminated substrate T using the first cooling plate 301 and the second cooling plate 302 so as to create a temperature difference between the front surface (an example of the second main surface) and the back surface (an example of the first main surface) of the laminated substrate T. Specifically, the control unit 91 controls the first temperature adjustment unit 303 and the second temperature adjustment unit 304 to make the temperature of the first cooling plate 301 and the temperature of the second cooling plate 302 different from each other, thereby creating a temperature difference between the front surface and the back surface of the laminated substrate T. In this way, the control unit 91 controls warping of the laminated substrate T during cooling.

[0103] For example, the control device 90 may store, in the storage unit 92, post-cooling warpage information that associates expected warpage shapes of the laminated substrate T after cooling by natural cooling with each type of the laminated substrate T. The "expected shape" may be, for example, information that distinguishes the direction of the warpage, i.e., whether the warpage is downwardly convex (see FIG. 14) or upwardly convex. The "expected shape" may also include information on the degree of warpage, such as flatness, in addition to the direction of the warpage. The "type of the laminated substrate T" may be information that identifies the laminated substrate T, such as a lot number. The "type of the laminated substrate T" may also be information that includes the materials, thicknesses, etc. of the glass substrate Wa, resin layer Wb, adhesive G, and support substrate S.

[0104] Furthermore, the control device 90 may store, in the storage unit 92, control information that associates, for each "expected shape," a combination of cooling temperatures of the first cooling plate 301 and the second cooling plate 302 for correcting the laminated substrate T to a desired warpage state. The combination of cooling temperatures of the first cooling plate 301 and the second cooling plate 302 can be obtained, for example, by prior experiments, simulations, etc.

[0105] In this case, the control unit 91 can correct the laminated substrate T to a desired warpage state (for example, a state without warpage) by controlling the first temperature control unit 303 and the second temperature control unit 304 according to the post-cooling warpage information and control information stored in the memory unit 92.

[0106] As an example, when the "expected shape" is a downward convex shape (see FIG. 14 ), the control unit 91 may control the first temperature adjustment unit 303 and the second temperature adjustment unit 304 so that the cooling temperature for the outer periphery of the laminated substrate T is lower than the cooling temperature for the central portion of the laminated substrate T. Specifically, the control unit 91 may control the first temperature adjustment unit 303 and the second temperature adjustment unit 304 so that the cooling temperature of the second cooling plate 302 is lower than the cooling temperature of the first cooling plate 301. Furthermore, when the "expected shape" is an upward convex shape, the control unit 91 may control the first temperature adjustment unit 303 and the second temperature adjustment unit 304 so that the cooling temperature for the central portion of the laminated substrate T is lower than the cooling temperature for the outer periphery of the laminated substrate T. Specifically, the control unit 91 may control the first temperature adjustment unit 303 and the second temperature adjustment unit 304 so that the cooling temperature of the second cooling plate 302 is lower than the cooling temperature of the first cooling plate 301.

[0107] For ease of understanding, the first temperature adjustment unit 303 and the second temperature adjustment unit 304 are controlled in accordance with the post-cooling warpage information and the control information. However, the control unit 91 may control the first temperature adjustment unit 303 and the second temperature adjustment unit 304 in accordance with information that associates a combination of cooling temperatures of the first cooling plate 301 and the second cooling plate 302 for correcting the laminated substrate T to a desired warpage state with each type of laminated substrate T.

[0108] Furthermore, the control unit 91 may control the cooling unit 300 based on a change over time in the warpage of the superposed substrate T observed by the monitoring unit 305, thereby creating a temperature difference in the superposed substrate T. For example, the control unit 91 may set the first cooling plate 301 and the second cooling plate 302 to the same cooling temperature at the start of the cooling process to cool the superposed substrate T. Then, the control unit 91 may change the cooling temperatures of the first cooling plate 301 and the second cooling plate 302 according to a change in the warpage of the superposed substrate T due to cooling. For example, when the degree of warpage of the superposed substrate T is outside the allowable range, for example, when the difference in height between the central portion and the outer periphery of the superposed substrate T exceeds a threshold, the control unit 91 may set the cooling temperature of the second cooling plate 302 lower than the cooling temperature of the first cooling plate 301. In addition, the control unit 91 may control the first temperature adjustment unit 303 and the second temperature adjustment unit 304 so that the difference in cooling temperature between the first cooling plate 301 and the second cooling plate 302 increases as the degree of warping of the laminated substrate T increases.

[0109] Here, the warpage of the laminated substrate T is corrected during cooling so as to suppress warpage of the laminated substrate T after cooling. However, the present invention is not limited to this, and the control unit 91 can also correct the warpage of the laminated substrate T during cooling so that the laminated substrate T has a desired warpage shape after cooling.

[0110] Also, here, an example has been described in which the cooling unit 300 is used to correct warpage of the laminated substrate T when cooling the laminated substrate T after it has been carried out of the bonding apparatus 80. However, the present invention is not limited to this. For example, depending on the type of adhesive G, the cooled laminated substrate T may be carried into a heat treatment apparatus 50 to heat the laminated substrate T. In such a case, when the cooling unit 300 cools the laminated substrate T after it has been heated by the heat treatment apparatus 50, the control unit 91 may correct warpage of the laminated substrate T during cooling so that the laminated substrate T has a desired warpage shape.

[0111] In this way, the bonding system 1 according to the embodiment controls warpage of the laminated substrate T by creating a temperature difference in the laminated substrate T when the heated laminated substrate T is cooled using the cooling unit 300. Therefore, the bonding system 1 according to the embodiment can control warpage of the laminated substrate T in which the target substrate W and the support substrate S are bonded together.

[0112] (First Modification) 15 is a schematic side view showing the configuration of a cooling unit 300 according to the first modified example. As shown in FIG. 15, the cooling unit 300 according to the first modified example includes a mounting plate 311, a first cooling block 312, a second cooling block 313, a first temperature adjustment unit 314, a second temperature adjustment unit 315, a first movement mechanism 316, a second movement mechanism 317, and a monitoring unit 305.

[0113] The mounting plate 311 is, for example, a plate-shaped member, and the laminated substrate T is mounted on the upper surface thereof. The first cooling block 312 and the second cooling block 313 are disposed above the mounting plate 311 and locally cool the front surface of the laminated substrate T mounted on the mounting plate 311. Specifically, the first cooling block 312 cools the central portion of the laminated substrate T. The second cooling block 313 is formed in an annular shape in a plan view and cools the outer periphery of the laminated substrate T.

[0114] A temperature control element 312a is provided inside the first cooling block 312. Similarly, a temperature control element 313a is provided inside the second cooling block 313. The temperature control element 312a and the temperature control element 313a are, for example, Peltier elements. The temperature control element 312a is connected to a first temperature control unit 314, and the temperature control element 313a is connected to a second temperature control unit 315. The first temperature control unit 314 and the second temperature control unit 315 are, for example, power supply units, which supply power to the temperature control elements 312a and 313a based on the control of the control unit 91. As a result, the temperatures of the lower surfaces (surfaces facing the laminated substrate T) of the first cooling block 312 and the second cooling block 313 are lowered by the temperature control element 312a and the temperature control element 313a.

[0115] The first moving mechanism 316 raises and lowers the first cooling block 312. The second moving mechanism 317 raises and lowers the second cooling block 313.

[0116] The control unit 91 may locally cool the laminated substrate T using at least one of the first cooling block 312 and the second cooling block 313, thereby creating a temperature difference within the surface of the laminated substrate T and controlling the warping of the laminated substrate T.

[0117] 15 , the control unit 91 may control the second moving mechanism 317 to lower the second cooling block 313 and bring the second cooling block 313 into contact with the outer periphery of the laminated substrate T. This locally cools the outer periphery of the laminated substrate T, thereby reducing warping of the laminated substrate T. Furthermore, the control unit 91 may not only bring the second cooling block 313 into contact with the outer periphery of the laminated substrate T, but also use the second cooling block 313 to press the outer periphery of the laminated substrate T into contact with the mounting plate 311. This makes it possible to suitably reduce warping of the laminated substrate T.

[0118] Furthermore, when the laminated substrate T is warped in an upward convex shape, the control unit 91 may control the first moving mechanism 316 to lower the first cooling block 312 and bring the first cooling block 312 into contact with the central portion of the laminated substrate T. This locally cools the central portion of the laminated substrate T, thereby reducing warping of the laminated substrate T. Furthermore, the control unit 91 may not only bring the first cooling block 312 into contact with the central portion of the laminated substrate T, but also use the first cooling block 312 to press the central portion of the laminated substrate T into contact with the mounting plate 311. In this manner, warping of the laminated substrate T can be suitably reduced.

[0119] The control unit 91 may determine, based on the post-cooling warpage information stored in the memory unit 92, which cooling block, the first cooling block 312 or the second cooling block 313, to use to cool the laminated substrate T. For example, when the warpage shape predicted by the post-cooling warpage information is downward convex, the control unit 91 may control the second moving mechanism 317 to lower the second cooling block 313 and bring the second cooling block 313 into contact with the outer periphery of the laminated substrate T. Furthermore, when the warpage shape predicted by the post-cooling warpage information is upward convex, the control unit 91 may control the first moving mechanism 316 to lower the first cooling block 312 and bring the first cooling block 312 into contact with the center of the laminated substrate T.

[0120] The control unit 91 may determine which cooling block, the first cooling block 312 or the second cooling block 313, to use to cool the laminated substrate T, based on a change over time in the warpage of the laminated substrate T observed by the monitoring unit 305. For example, when the height of the outer periphery of the laminated substrate T becomes higher than the height of the central portion and the difference exceeds a threshold, the control unit 91 may control the second moving mechanism 317 to lower the second cooling block 313 and bring the second cooling block 313 into contact with the outer periphery of the laminated substrate T. Furthermore, when the height of the central portion of the laminated substrate T becomes higher than the height of the outer periphery and the difference exceeds a threshold, the control unit 91 may control the first moving mechanism 316 to lower the first cooling block 312 and bring the first cooling block 312 into contact with the central portion of the laminated substrate T.

[0121] The control unit 91 may also cool the laminated substrate T using both the first cooling block 312 and the second cooling block 313. In this case, the control unit 91 may make the temperature of the first cooling block 312 and the temperature of the second cooling block 313 different from each other so as to create a temperature difference between the center and the outer periphery of the laminated substrate T. Specifically, the control unit 91 may control the first temperature adjustment unit 314 and the second temperature adjustment unit 315 in accordance with post-cooling warpage information and control information stored in the storage unit 92. The control unit 91 may also create a temperature difference in the laminated substrate T by controlling the first temperature adjustment unit 314 and the second temperature adjustment unit 315 based on a change over time in the warpage of the laminated substrate T observed by the monitoring unit 305.

[0122] Here, an example has been described in which the cooling section 300 is equipped with both the first cooling block 312 and the second cooling block 313, but the cooling section 300 may also be configured to be equipped with only one of the first cooling block 312 and the second cooling block 313.

[0123] Moreover, the cooling unit 300 may be provided with a cooling plate instead of the mounting plate 311.

[0124] In this manner, the cooling unit 300 may include a second cooling block 313 that cools the outer periphery of the laminated substrate T. In this case, the control unit 91 may create a temperature difference within the surface of the laminated substrate T by bringing the second cooling block 313 into contact with the outer periphery of the laminated substrate T.

[0125] The cooling unit 300 may also include a first cooling block 312 that cools the central portion of the laminated substrate T. In this case, the control unit 91 may cause the first cooling block 312 to contact the central portion of the laminated substrate T, thereby creating a temperature difference within the plane of the laminated substrate T.

[0126] Furthermore, the control unit 91 may bring the cooling block (the first cooling block 312 or the second cooling block 313) into contact with the laminated substrate T and press the laminated substrate T using the cooling block.

[0127] (Second Modification) 16 is a schematic side view showing the configuration of a cooling unit 300 according to the second modified example. As shown in FIG. 16, the cooling unit 300 according to the second modified example includes a mounting plate 321, a nozzle 322, a flow rate adjuster 323, a temperature adjuster 324, a moving mechanism 325, and a monitor 305.

[0128] The mounting plate 321 is, for example, a plate-shaped member, and the laminated substrate T is mounted on the upper surface thereof. The nozzle 322 is disposed above the mounting plate 321 and supplies cooling gas to the front surface of the laminated substrate T mounted on the mounting plate 321. Specifically, the nozzle 322 is connected to a gas supply source 329 via a flow rate adjuster 323 and a temperature adjuster 324. The flow rate adjuster 323 adjusts the flow rate of the gas supplied from the gas supply source 329 to the nozzle 322. The temperature adjuster 324 adjusts the temperature of the gas supplied from the gas supply source 329 to the nozzle 322. The gas supplied from the gas supply source 329 may be, for example, dry air or an inert gas (such as nitrogen). The moving mechanism 325 moves the nozzle 322. For example, the moving mechanism 325 can move the nozzle 322 horizontally and vertically.

[0129] In this way, the control unit 91 can create a temperature difference between the front and back surfaces of the laminated substrate T by supplying cooling gas from the nozzle 322 to the entire front surface of the laminated substrate T from above the laminated substrate T placed on the mounting plate 321.

[0130] For example, the control unit 91 may create a temperature difference between the front and back surfaces of the laminated substrate T by controlling at least one of the flow rate adjuster 323, the temperature adjuster 324, and the moving mechanism 325 based on the post-cooling warpage information stored in the memory unit 92. For example, the control unit 91 may increase the flow rate of the cooling gas supplied from the nozzle 322 as the expected degree of warpage increases. Furthermore, the control unit 91 may decrease the temperature of the cooling gas supplied from the nozzle 322 as the expected degree of warpage increases. Furthermore, the control unit 91 may move the nozzle 322 closer to the laminated substrate T as the expected degree of warpage increases.

[0131] The control unit 91 can also locally cool a portion of the front surface of the laminated substrate T by controlling the movement mechanism 325 to move the position of the nozzle 322 or by controlling the flow rate adjustment unit 323 to adjust the flow rate of the cooling gas discharged from the nozzle 322. In this way, the control unit 91 can create a temperature difference within the plane of the laminated substrate T and control warping of the laminated substrate T.

[0132] Furthermore, the control unit 91 may create a temperature difference between the front and back surfaces of the laminated substrate T by controlling at least one of the flow rate adjuster 323, the temperature adjuster 324, and the moving mechanism 325 based on a change over time in the warping of the laminated substrate T observed by the monitoring unit 305. For example, the control unit 91 may increase the flow rate of the cooling gas supplied from the nozzle 322 as the degree of warping of the laminated substrate T observed by the monitoring unit 305 increases. The control unit 91 may also decrease the temperature of the cooling gas supplied from the nozzle 322 as the degree of warping of the laminated substrate T observed by the monitoring unit 305 increases. The control unit 91 may also move the nozzle 322 closer to the laminated substrate T as the degree of warping of the laminated substrate T observed by the monitoring unit 305 increases.

[0133] Here, an example has been described in which cooling gas is supplied to the front surface of the laminated substrate T from the nozzle 322 arranged above the laminated substrate T. However, the present invention is not limited to this, and the cooling unit 300 may supply cooling gas to the back surface of the laminated substrate T from the nozzle 322 arranged below the laminated substrate T. In this case, the cooling unit 300 may have, instead of the mounting plate 321, for example, a gripping unit that grips the peripheral edge of the laminated substrate T.

[0134] Further, although an example in which the cooling unit 300 includes the mounting plate 321 has been described here, the cooling unit 300 may include a cooling plate instead of the mounting plate 321.

[0135] In this manner, the cooling unit 300 may include a nozzle 322 that supplies cooling gas to one of the front and back surfaces of the laminated substrate T. In this case, the control unit 91 may create a temperature difference between the front and back surfaces of the laminated substrate T by controlling at least one of the flow rate and temperature of the cooling gas supplied from the nozzle 322 and the position of the nozzle 322.

[0136] (Third Modification) 17 is a schematic side view showing the configuration of a cooling unit 300 according to the third modified example. As shown in Fig. 17, the cooling unit 300 according to the third modified example includes a mounting plate 331, a first nozzle 332, a plurality of second nozzles 333, a first flow rate adjuster 334, a second flow rate adjuster 335, a first temperature adjuster 336, a second temperature adjuster 337, and a monitoring unit 305.

[0137] The mounting plate 331 is, for example, a plate-shaped member, and the laminated substrate T is mounted on the upper surface thereof. The first nozzle 332 and the plurality of second nozzles 333 are disposed above the mounting plate 331, and locally cool the front surface of the laminated substrate T mounted on the mounting plate 331. Specifically, the first nozzle 332 cools the central portion of the laminated substrate T. Furthermore, the plurality of second nozzles 333 cool the outer periphery of the laminated substrate T.

[0138] The first nozzle 332 is connected to a gas supply source 339 via a first flow rate adjuster 334 and a first temperature adjuster 336. The first flow rate adjuster 334 adjusts the flow rate of the gas supplied from the gas supply source 339 to the first nozzle 332. The first temperature adjuster 336 adjusts the temperature of the gas supplied from the gas supply source 339 to the first nozzle 332. The gas supplied from the gas supply source 339 may be, for example, dry air or an inert gas (such as nitrogen).

[0139] The plurality of second nozzles 333 are connected to a gas supply source 339 via a second flow rate adjuster 335 and a second temperature adjuster 337. The second flow rate adjuster 335 adjusts the flow rate of the gas supplied from the gas supply source 339 to the plurality of second nozzles 333. The second temperature adjuster 337 adjusts the temperature of the gas supplied from the gas supply source 339 to the plurality of second temperature adjusters 337.

[0140] The control unit 91 can create a temperature difference within the surface of the laminated substrate T by supplying cooling gas or heating gas from a first nozzle 332 and a plurality of second nozzles 333 to the front surface of the laminated substrate T from above the laminated substrate T placed on the mounting plate 321.

[0141] 17, the laminated substrate T is warped in a downward convex shape. In this case, the control unit 91 may control the first temperature adjustment unit 336 to supply a heating gas from the first nozzle 332 to the central portion of the laminated substrate T, and may control the second temperature adjustment unit 337 to supply a cooling gas from the multiple second nozzles 333 to the outer periphery of the laminated substrate T. This can reduce the warping of the laminated substrate T.

[0142] Furthermore, suppose that the laminated substrate T is warped in an upward convex shape. In this case, the control unit 91 may control the first temperature adjustment unit 336 to supply cooling gas from the first nozzle 332 to the central portion of the laminated substrate T, and may control the second temperature adjustment unit 337 to supply heating gas from the multiple second nozzles 333 to the outer periphery of the laminated substrate T. This makes it possible to reduce warping of the laminated substrate T.

[0143] The control unit 91 may determine the temperature of the gas supplied from the first nozzle 332 and the plurality of second nozzles 333 based on the post-cooling warpage information stored in the memory unit 92. Furthermore, the control unit 91 may determine the temperature of the gas supplied from the first nozzle 332 and the plurality of second nozzles 333 based on the change over time in the warpage of the laminated substrate T observed by the monitoring unit 305.

[0144] Here, an example has been described in which the first nozzle 332 and the multiple second nozzles 333 are arranged above the laminated substrate T. However, the present invention is not limited to this. The first nozzle 332 and the multiple second nozzles 333 may be arranged below the laminated substrate T. In this case, if the laminated substrate T is warped downwardly, the control unit 91 supplies cooling gas from the first nozzle 332 to the central portion of the laminated substrate T and supplies heating gas from the multiple second nozzles 333 to the peripheral portion of the laminated substrate T. Furthermore, if the laminated substrate T is warped upwardly, the control unit 91 supplies cooling gas from the first nozzle 332 to the central portion of the laminated substrate T and supplies heating gas from the multiple second nozzles 333 to the peripheral portion of the laminated substrate T. Note that when the first nozzle 332 and the multiple second nozzles 333 are arranged below the laminated substrate T, the cooling unit 300 may have, for example, a gripping unit that grips the peripheral portion of the laminated substrate T, instead of the mounting plate 321.

[0145] The cooling unit 300 may include a cooling plate instead of the mounting plate 331.

[0146] In this way, the cooling unit 300 may include a plurality of nozzles (here, a first nozzle 332 and a plurality of second nozzles 333) that supply gas at a predetermined temperature to different positions within the surface of the laminated substrate T. In this case, the control unit 91 may create a temperature difference within the surface of the laminated substrate T by controlling the temperature of the gas supplied from the plurality of nozzles.

[0147] (Fourth Modification) 18 is a schematic side view showing the configuration of a cooling unit 300 according to the fourth modified example. As shown in FIG. 18, the cooling unit 300 according to the fourth modified example includes a cooling plate 341, an inverting unit 342, a temperature adjusting unit 343, and a monitoring unit 305.

[0148] The cooling plate 341 is a so-called cooling plate. A temperature control element 341a is provided inside the cooling plate 341. The temperature control element 341a is, for example, a Peltier element. The temperature control element 341a is connected to a temperature control unit 343. The temperature control unit 343 is, for example, a power supply unit, and supplies power to the temperature control element 341a based on the control of the control unit 91. As a result, the temperature of the upper surface of the cooling plate 341 (the surface facing the laminated substrate T) is lowered by the temperature control element 341a.

[0149] The inversion unit 342 includes a holding arm 342a that sandwiches and holds the laminated substrate T. The holding arm 342a is disposed above the cooling plate 341. The inversion unit 342 also includes a first drive unit 342b. The first drive unit 342b includes a motor and the like, and rotates the holding arm 342a around a horizontal axis. A second drive unit 342c including a motor and the like is provided below the first drive unit 342b. The second drive unit 342c moves the first drive unit 342b in the vertical direction along a support column 342d. The first drive unit 342b and the second drive unit 342c enable the holding arm 342a to rotate around the horizontal axis and move in the vertical direction.

[0150] The control unit 91 controls the second transfer device 21 to carry the laminated substrate T carried out from the bonding device 80 into the cooling unit 300. At this time, the control unit 91 may determine whether to place the laminated substrate T on the cooling plate 341 or to hand it over to the holding arm 342a, depending on the shape of warpage expected from the post-cooling warpage information stored in the storage unit 92.

[0151] For example, when it is assumed that the laminated substrate T will be warped in a downward convex shape, the control unit 91 may transfer the laminated substrate T to the holding arm 342a. In this case, the control unit 91 controls the inverting unit 342 to rotate the holding arm 342a about the horizontal axis, thereby inverting the laminated substrate T so that the front surface (the back surface after inversion) of the laminated substrate T faces the cooling plate 341. Then, the control unit 91 controls the inverting unit 342 to lower the holding arm 342a, thereby placing the inverted laminated substrate T on the cooling plate 341, and the cooling plate 341 cools the laminated substrate T.

[0152] On the other hand, when it is assumed that the laminated substrate T will be warped in an upward convex shape, the control unit 91 places the laminated substrate T on the cooling plate 341 without using the inverting unit 342, and cools the laminated substrate T by the cooling plate 341.

[0153] Furthermore, the control unit 91 may place the superposed substrate T carried into the cooling unit 300 on the cooling plate 341 to start cooling the superposed substrate T, and then cause the reversing unit 342 to reverse the superposed substrate T based on a change over time in the warping of the superposed substrate T observed by the monitoring unit 305. For example, when the degree of warping exceeds a threshold, for example, when the difference in height between the central portion and the outer periphery of the superposed substrate T exceeds a threshold, the control unit 91 may control the reversing unit 342 to reverse the superposed substrate T. Then, the control unit 91 may place the reversed superposed substrate T on the cooling plate 341 again, and cool the superposed substrate T with the cooling plate 341.

[0154] As described above, the cooling unit 300 may include a cooling plate 341 and an inversion unit 342 that inverts the superposed substrate T. In this case, the control unit 91 may use the inversion unit 342 to invert the superposed substrate T so that a predetermined surface of the front surface or the back surface faces the cooling plate 341, and then place the superposed substrate T on the cooling plate 341, thereby forming a temperature difference between the front surface and the back surface.

[0155] (Fifth Modification) 19 is a schematic side view showing the configuration of a cooling section 300 according to the fifth modified example. As shown in FIG. 19, the cooling section 300 according to the fifth modified example includes a cooling plate 351, a first adsorption section 352, a second adsorption section 353, a first air supply device 354, a second air supply device 355, and a monitoring section 305.

[0156] The cooling plate 351 is a so-called cooling plate. Although not shown here, a temperature control element is provided inside the cooling plate 351, and the temperature of the temperature control element is controlled by a temperature control unit (not shown).

[0157] The first suction section 352 and the second suction section 353 are provided, for example, on the cooling plate 351. The first suction section 352 is provided at a position corresponding to the center of the laminated substrate T. The second suction section 353 is formed, for example, in a ring shape in a plan view, and is provided at a position facing the outer periphery of the laminated substrate T. The first suction section 352 is connected to a first air supply device 354 and adsorbs the center of the laminated substrate T by using a suction force generated by the first air supply device 354. The second suction section 353 is connected to a second air supply device 355 and adsorbs the outer periphery of the laminated substrate T by using a suction force generated by the second air supply device 355.

[0158] The control unit 91 may control the first air supply device 354 or the second air supply device 355 according to the shape of the warp expected from the post-cooling warp information stored in the memory unit 92, and may perform cooling by the cooling plate 351 while adsorbing the laminated substrate T.

[0159] For example, if it is expected that the laminated substrate T will warp in a downward convex shape, the control unit 91 may control the second air supply device 355 to adsorb the outer periphery of the laminated substrate T using the second suction unit 353, while cooling the laminated substrate T using the cooling plate 351.

[0160] Furthermore, when it is expected that the laminated substrate T will be warped in an upward convex shape, the control unit 91 may control the first air supply device 354 to adsorb the central portion of the laminated substrate T with the first adsorption unit 352, while cooling the laminated substrate T using the cooling plate 351.

[0161] In addition, the control unit 91 may determine which of the first suction unit 352 and the second suction unit 353 to use to adsorb the laminated substrate T based on the change over time in the warping of the laminated substrate T observed by the monitoring unit 305.

[0162] Here, an example has been described in which the cooling section 300 has both the first adsorption section 352 and the second adsorption section 353, but the cooling section 300 may also be configured to have either the first adsorption section 352 or the second adsorption section 353.

[0163] In this way, the cooling unit 300 may include an adsorption unit (first adsorption unit 352 or second adsorption unit 353) that adsorbs the outer periphery or the center of the laminated substrate T. In this case, the control unit 91 may cool the laminated substrate T while adsorbing the outer periphery or the center of the laminated substrate T using the adsorption unit.

[0164] The first adsorption section 352 and the second adsorption section 353 may be provided in the cooling section 300 according to the embodiment described above or in the cooling section 300 according to the first to fourth modified examples.

[0165] As described above, the bonding apparatus according to the embodiment (for example, the bonding apparatus 80) includes a first holding unit (for example, the first holding unit 151), a second holding unit (for example, the second holding unit 152), and a moving mechanism (for example, the moving mechanism 155). The first holding unit adsorbs and holds a first substrate (for example, the substrate to be processed W). The second holding unit adsorbs and holds a second substrate (for example, the support substrate S). The moving mechanism moves the first holding unit and the second holding unit relative to each other. The bonding apparatus according to the embodiment uses the moving mechanism to bring the first substrate and the second substrate into contact with each other to form an overlapped substrate (for example, the overlapped substrate T). The bonding apparatus also includes a heating unit (for example, the heating unit 130 or the heat treatment apparatus 50), a cooling unit (for example, the cooling unit 300), and a control unit (for example, the control unit 91). The heating unit heats the first substrate and the second substrate, or the overlapped substrate. The cooling unit cools the heated laminated substrate. The control unit controls the cooling unit. The control unit controls the cooling unit to form a temperature difference in the laminated substrate, thereby controlling warping of the laminated substrate.

[0166] Therefore, the bonding device according to the embodiment can control warpage of the laminated substrate in which the first substrate and the second substrate are bonded together.

[0167] The disclosed embodiments should be considered in all respects as illustrative and not restrictive. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0168] 50 Heat treatment equipment 80 Bonding equipment 91 Control Unit 130 Heating section 151 1st holding part 152 Second holding part 155 Moving mechanism 300 Cooling section S Support board T Polymer Substrate W: Substrate to be processed

Claims

1. A bonding method including: sucking and holding a first substrate using a first holding unit; sucking and holding a second substrate using a second holding unit; and moving the first holding unit and the second holding unit relatively to bring the first substrate and the second substrate into contact with each other to form an overlapped substrate, heating the first substrate and the second substrate or the laminated substrate; cooling the heated laminated substrate using a cooling unit; Including, The cooling step forms a temperature difference within the plane of the laminated substrate, thereby controlling warpage of the laminated substrate.

2. the cooling unit includes a cooling block that cools the outer periphery of the laminated substrate; The bonding method according to claim 1 , wherein the cooling step comprises bringing the cooling block into contact with an outer periphery of the laminated substrate, thereby creating a temperature difference within the plane of the laminated substrate.

3. the cooling unit includes a cooling block that cools a central portion of the laminated substrate; The bonding method according to claim 1 , wherein the cooling step comprises bringing the cooling block into contact with a central portion of the laminated substrate, thereby creating a temperature difference within the plane of the laminated substrate.

4. The bonding method according to claim 2 or 3, wherein the cooling comprises bringing the cooling block into contact with the laminated substrate and pressing the laminated substrate with the cooling block.

5. the cooling unit includes a plurality of nozzles for supplying gas at a predetermined temperature to different positions within a surface of the laminated substrate; The bonding method according to claim 1 , wherein the cooling step comprises controlling the temperature of the gas supplied from the plurality of nozzles to form a temperature difference within the plane of the laminated substrate.

6. the cooling unit includes a suction unit that suctions the outer periphery or the center of the laminated substrate, 6. The bonding method according to claim 1, wherein the cooling comprises cooling the laminated substrate while adsorbing the outer periphery or the center of the laminated substrate using the adsorption unit.

7. A monitoring unit for monitoring warpage of the laminated substrate Equipped with 7. The bonding method according to claim 1, wherein the cooling step comprises controlling the cooling unit based on a change in warpage of the laminated substrate observed by the monitoring unit to create a temperature difference in the laminated substrate.

8. A bonding device comprising: a first holding unit that suction-holds a first substrate; a second holding unit that suction-holds a second substrate; and a movement mechanism that relatively moves the first holding unit and the second holding unit, wherein the movement mechanism is used to bring the first substrate and the second substrate into contact with each other to form a laminated substrate, a heating unit that heats the first substrate and the second substrate, or the laminated substrate; a cooling unit that cools the heated laminated substrate; a control unit that controls the cooling unit; Equipped with The control unit controls the cooling unit to form a temperature difference within the plane of the laminated substrate, thereby controlling warping of the laminated substrate.

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