Precursors and Related Methods

Abstract

Some embodiments relate to a precursor comprising a precursor for vapor deposition. The precursor comprises an aliphatic hydrocarbon and at least one disilylamine group. The at least one disilylamine group is bonded to an aliphatic hydrocarbon. The at least one disilylamine group does not comprise a silanide group. Some embodiments relate to a method for making the precursor. The method comprises reacting a polyamine compound with a silyl halide compound in the presence of a base to form a precursor useful for vapor deposition. Some embodiments relate to a method for forming a silicon-containing film using the precursor.

Description

[Technical Field]

[0001] Priority This disclosure claims priority to U.S. Provisional Patent Application No. 63 / 291,119, filed December 17, 2021, which is incorporated herein by reference.

[0002] FIELD OF THE DISCLOSURE The present disclosure relates generally to vapor deposition precursors and related methods. [Background technology]

[0003] Semiconductor device manufacturing processes utilize silicon source reagents in vapor deposition processes to form silicon films. One example of a silicon source reagent is tetraethyl orthosilicate (TEOS). To form a silicon film from TEOS, TEOS is vaporized and deposited onto a substrate. Summary of the Invention

[0004] Some embodiments relate to a precursor. In some embodiments, the precursor comprises an aliphatic hydrocarbon and at least one disilylamine group. In some embodiments, the at least one disilylamine group is bonded to an aliphatic hydrocarbon. In some embodiments, the at least one disilylamine group does not comprise a silanide group.

[0005] In some embodiments, the aliphatic hydrocarbon is C1-C 10 Contains alkanes.

[0006] In some embodiments, the aliphatic hydrocarbon is a straight chain C1-C 10 Contains alkanes.

[0007] In some embodiments, the aliphatic hydrocarbon is a branched C1-C 10 Contains alkanes.

[0008] In some embodiments, at least one disilylamine group has the following formula: TIFF0007789215000001.tif54170[In the formula, R 1 , R 2 and R 3 are independently hydrogen, C1 to C 10 Straight chain alkyl, C3-C 10 including branched alkyl, C3-C8 cycloalkyl, aryl, or benzyl] It has.

[0009] In some embodiments, the precursor further comprises at least one silylamine group attached to the aliphatic hydrocarbon.

[0010] In some embodiments, at least one silylamine group has the following formula: TIFF0007789215000002.tif39170[In the formula, R 1 , R 2 and R 3 are independently hydrogen, C1 to C 10 Straight chain alkyl, C3-C 10 including branched alkyl, C3-C8 cycloalkyl, aryl, or benzyl] It has.

[0011] In some embodiments, the precursor has the formula: TIFF0007789215000003.tif125170[In the formula, n is 0 to 10; R 1 , R 2 and R 3 are independently hydrogen, C1 to C 10 Straight chain alkyl, C3-C 10 including branched alkyl, C3-C8 cycloalkyl, aryl, or benzyl] is a compound of

[0012] In some embodiments, the precursor is the reaction product of a polyamine compound and a silyl halide compound.

[0013] In some embodiments, the precursor is a compound of the formula: TIFF0007789215000004.tif109170

[0014] In some embodiments, the precursor is a liquid at room temperature.

[0015] Some embodiments relate to a method for forming a silicon-containing film. In some embodiments, the method for forming a silicon-containing film includes one or more of the following steps: obtaining a precursor comprising an aliphatic hydrocarbon and at least one disilylamine group, wherein at least one disilylamine group is bonded to an aliphatic hydrocarbon, and at least one disilylamine group does not contain a silanide group; vaporizing the precursor to obtain a vaporized precursor; and contacting the vaporized precursor with a substrate under vapor deposition conditions to form a silicon-containing film on the substrate.

[0016] In some embodiments, the vapor deposition conditions include atomic layer deposition conditions.

[0017] In some embodiments, the vapor deposition conditions include plasma-enhanced atomic layer deposition conditions.

[0018] In some embodiments, the vapor deposition conditions include thermal atomic layer deposition conditions.

[0019] In some embodiments, the silicon-containing film comprises at least one of SiO, SiN, SiOC, SiCN, SiOCN, or any combination thereof.

[0020] In some embodiments, the precursor has the formula: TIFF0007789215000005.tif55170[In the formula, n is 0 to 10; R 1 , R 2 and R 3 are independently hydrogen, C1 to C 10 Straight chain alkyl, C3-C 10 including branched alkyl, C3-C8 cycloalkyl, aryl, or benzyl] is a compound of

[0021] In some embodiments, the precursor has the formula: TIFF0007789215000006.tif55170[In the formula, n is 0 to 10; R 1 , R 2 and R 3 are independently hydrogen, C1 to C 10 Straight chain alkyl, C3-C 10 including branched alkyl, C3-C8 cycloalkyl, aryl, or benzyl] is a compound of

[0022] In some embodiments, the precursor is a compound of the formula: TIFF0007789215000007.tif113170

[0023] Some embodiments relate to a method for making a precursor, which includes one or more of the following steps: reacting a polyamine compound with a silyl halide compound in the presence of a base to form a precursor comprising an aliphatic hydrocarbon and at least one disilylamine group, wherein the at least one disilylamine group is bonded to the aliphatic hydrocarbon and the at least one disilylamine group does not comprise a silanide group.

[0024] Reference is made to the drawings which form a part of this disclosure and which illustrate embodiments in which the materials and methods described herein may be practiced. [Brief explanation of the drawings]

[0025] [Figure 1] 1 is a flowchart of a method of making a precursor, according to some embodiments. [Figure 2] 1 is a flowchart of a method of making a silicon-containing film, according to some embodiments. [Figure 3]FIG. 1 shows a proton nuclear magnetic resonance ( 1 H NMR) spectrum according to some embodiments. DETAILED DESCRIPTION OF THE INVENTION

[0026] definition As used herein, the term "aliphatic hydrocarbon" refers to a monovalent or polyvalent aliphatic hydrocarbon group. This term includes, for example, but is not limited to, at least one of a monovalent alkyl group, a polyvalent alkyl group, a monovalent alkenyl group, a polyvalent alkenyl group, a monovalent alkynyl group, a polyvalent alkynyl group, or any combination thereof. The term polyvalent includes, for example, but is not limited to, at least one of a divalent group, a trivalent group, a tetravalent group, or any combination thereof, among other polyvalent groups. Non-limiting examples of aliphatic hydrocarbons include at least one of a monovalent alkyl group, a divalent alkyl group, a trivalent alkyl group, or a tetravalent alkyl group. In some embodiments, the aliphatic hydrocarbon does not contain heteroatoms. In some embodiments, the aliphatic hydrocarbon does not contain cyclic compounds, such as, for example, but not limited to, cycloalkanes.

[0027] As used herein, the term "alkyl" refers to a monovalent or polyvalent hydrocarbon chain radical having 1 to 30 carbon atoms. An alkyl having n carbon atoms is defined as "C n For example, "C alkyl" can include n-propyl and isopropyl. For example, alkyl having a range of carbon atoms, such as 1 to 30 carbon atoms, can be specified as C1-C 30 In some embodiments, alkyl is linear. In some embodiments, alkyl is branched. In some embodiments, alkyl is substituted. In some embodiments, alkyl is unsubstituted. In some embodiments, alkyl is C1-C 10 Alkyl, C1-C9 alkyl, C1-C8 alkyl, C1-C7 alkyl, C1-C6 alkyl, C1-C5 alkyl, C1-C4 alkyl, C1-C3 alkyl, C2-C 10 Alkyl, C3-C 10Alkyl, C4-C 10 Alkyl, C5-C 10 Alkyl, C6-C 10 Alkyl, C7-C 10 Alkyl, C8-C 10 In some embodiments, the alkyl is selected from the group comprising, consisting of, consisting essentially of, or comprising at least one of methyl, ethyl, n-propyl, 1-methylethyl (isopropyl), n-butyl, isobutyl, sec-butyl, n-pentyl, 1,1-dimethylethyl (t-butyl), n-pentyl, isopentyl, n-hexyl, isohexyl, 3-methylhexyl, 2-methylhexyl, heptyl, octyl, nonyl, decyl, dodecyl, octadecyl, or any combination thereof.

[0028] As used herein, the term "cycloalkyl" refers to a non-aromatic carbocyclic group attached through a single bond and having 3 to 8 carbon atoms in the ring. The term includes monocyclic non-aromatic carbocycles and polycyclic non-aromatic carbocycles. Two or more cycloalkyls may be fused, bridged, or fused and bridged to give, for example, a polycyclic non-aromatic carbocycle. In some embodiments, the cycloalkyl is selected from the group comprising, consisting of, consisting essentially of, or comprising at least one of cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, or any combination thereof.

[0029] As used herein, the term "aryl" refers to an aromatic ring containing carbon and hydrogen atoms. Examples of aryl include, but are not limited to, phenyl, biphenyl, naphthyl, and the like.

[0030] As used herein, the term "growth per cycle" or "GPC" refers to the increment in film thickness per cycle of deposition.

[0031] As used herein, the term "silicon-containing film" refers to a film containing at least one of silicon, silicon nitride, silicon oxynitride, silicon oxide, silicon dioxide, silicon carbide, silicon carbonitride, silicon oxynitride, carbon-doped silicon nitride, carbon-doped silicon oxide, carbon-doped silicon oxynitride, or any combination thereof. For example, the silicon-containing film may include at least one of an SiO film, a SiN film, an SiOC film, a SiCN film, an SiOCN film, or any combination thereof. In some embodiments, the silicon-containing film has a thickness of 20 Å to 2000 Å.

[0032] Consideration Some embodiments relate to precursors and related methods. At least some of these embodiments relate to precursors useful for manufacturing microelectronic devices, including semiconductor devices. For example, the precursors can be used to form silicon-containing films by one or more deposition methods. Examples of deposition methods can include, but are not limited to, chemical vapor deposition (CVD) processes, digital or pulsed chemical vapor deposition processes, plasma-enhanced cyclic chemical vapor deposition processes (PECCVD), flowable chemical vapor deposition (FCVD), atomic layer deposition (ALD) processes, thermal atomic layer deposition, plasma-enhanced atomic layer deposition (PEALD) processes, metalorganic chemical vapor deposition (MOCVD) processes, plasma-enhanced chemical vapor deposition (PECVD) processes, or any combination thereof.

[0033] In some embodiments, for example, a silicon precursor is provided. The silicon precursor can exhibit many advantages over conventional silicon precursors. For example, the precursor can exhibit at least one of a high growth per cycle (GPC), high thermal stability, or any combination thereof. At least one advantage of the precursor is that a high GPC in a deposition process, such as atomic layer deposition, increases as the number of silyl groups attached to the amine nitrogen increases. At least another advantage is that the strength of the silicon-nitrogen bond in the silylamine and / or disilylamine groups confers high thermal stability to the silicon precursor, while the amine groups increase silicon reactivity. Furthermore, the precursor can be provided in liquid form (e.g., as a liquid silicon precursor). These advantages are not limiting, as numerous other advantages are described herein or are otherwise apparent from this disclosure.

[0034] The precursor comprises, consists of, or consists essentially of at least one of an aliphatic hydrocarbon, at least one silylamine group, at least one disilylamine group, or any combination thereof. In some embodiments, the precursor comprises, consists of, or consists essentially of an aliphatic hydrocarbon bonded to at least one disilylamine group. The number of disilylamine groups bonded to the aliphatic hydrocarbon is not particularly limited. For example, 1 to 20 disilylamine groups may be bonded to the aliphatic hydrocarbon. In some embodiments, at least one silylamine group may be bonded to the aliphatic hydrocarbon, or further silylamine groups may be bonded to the aliphatic hydrocarbon. The number of silylamine groups bonded to the aliphatic hydrocarbon is not particularly limited. For example, 1 to 20 silylamine groups may be bonded to the aliphatic hydrocarbon, or further silylamine groups may be bonded to the aliphatic hydrocarbon. In some embodiments, at least one silylamine group and / or at least one disilylamine group is a terminal group in which a nitrogen atom is bonded to a terminal carbon atom of the aliphatic hydrocarbon.

[0035] In some embodiments, the disilylamine group has the following formula: TIFF0007789215000008.tif55170[where, R 1 , R 2 and R 3 each independently represents hydrogen, C1 to C 10 Straight chain alkyl, C3-C 10 branched alkyl, C3-C8 cycloalkyl, aryl, benzyl, or any combination thereof] It is expressed as:

[0036] In some embodiments, the silylamine group has the following formula: TIFF0007789215000009.tif39170[where, R 1 , R 2 and R 3 each independently represents hydrogen, C1 to C 10 Straight chain alkyl, C3-C 10 branched alkyl, C3-C8 cycloalkyl, aryl, benzyl, or any combination thereof] It is expressed as:

[0037] In some embodiments, the precursor has the formula: TIFF0007789215000010.tif125170[In the formula, n is 0 to 10; R 1 , R 2 and R 3 each independently represents hydrogen, C1 to C 10 Straight chain alkyl, C3-C 10 branched alkyl, C3-C8 cycloalkyl, aryl, benzyl, or any combination thereof] The compound of formula (I) comprises, consists of, or consists essentially of the compound of formula (I).

[0038] In some embodiments, the precursor is the reaction product of an amine compound and a silyl halide compound.

[0039] In some embodiments, the amine compound is a primary amine, a secondary amine, or a tertiary amine. In some embodiments, the amine compound is at least one of a diamine, a triamine, a tetraamine, a pentaamine, etc., or any combination thereof. In some embodiments, the amine compound is a polyamine compound. In some embodiments, the polyamine compound is selected from the group comprising, consisting of, consisting essentially of, or comprising at least one of ethylenediamine, propylenediamine, trimethylenediamine, triethylenediamine, methylpentanediamine, tetramethylenediamine, 1,3-diaminobutane, 2,3-diaminobutane, pentamethylenediamine, 2,4-diaminopentane, hexamethylenediamine, heptamethylenediamine, octamethylenediamine, nonamethylenediamine, 1,2,3-triaminopropane, hydrazine, tetra(aminomethyl)methane, or any combination thereof. In some embodiments, the polyamine compound is selected from the group comprising, consisting of, consisting essentially of, or comprising at least one of N-methylethylenediamine, N,N-dimethylethylenediamine, trimethylethylenediamine, N-ethylethylenediamine, N,N-diethylethylenediamine, triethylethylenediamine, or any combination thereof. In some embodiments, the polyamine compound is selected from the group comprising, consisting of, consisting essentially of, or comprising at least one of tris(2-aminoethyl)amine, diethylenetriamine, triethylenetetramine, tetraethylenepentamine, heptaethyleneoctamine, nonaethylenedecamine, N',N'-bis(2-aminoethyl)ethane-1,2-diamine, or any combination thereof.In some embodiments, the polyamine compound comprises at least one of 1,2-ethanediamine; 1,2-propanediamine; 1,3-propanediamine; 1,4-butanediamine; 1,6-hexanediamine; 2-methyl-1,5-pentanediamine; 2,2(4),4-trimethylhexanediamine; 2,2,4-trimethyl-1,6-hexanediamine; 2,4,4-trimethyl-1,6-hexanediamine; or any combination thereof.

[0040] In some embodiments, the silyl halide compound has the formula: TIFF0007789215000011.tif34170[In the formula, X is a halogen (e.g., F, Cl, Br, or I); R 1 , R 2 and R 3 each independently represents hydrogen, C1 to C 10 Straight chain alkyl, C3-C 10 including branched alkyl, C3-C8 cycloalkyl, aryl, or benzyl] is a compound of

[0041] In some embodiments, the silyl halide compound is selected from the group comprising, consisting of, consisting essentially of, or comprising at least one of dialkylsilyl halide, trialkylsilyl halide, monoalkyldiarylsilyl halide, triarylsilyl halide, or any combination thereof. In some embodiments, the silyl halide compound is selected from the group comprising, consisting of, consisting essentially of, or comprising at least one of dichlorosilane, trichlorosilane, triethylsilyl chloride, tert-butyldimethylsilyl chloride, trimethylsilane, trimethylchlorosilane, tetramethylsilyl chloride, triphenylsilyl chloride, tert-butyldiphenylsilyl chloride, or any combination thereof.

[0042] In some embodiments, the precursor is at least one compound of the formula: TIFF0007789215000012.tif101170

[0043] The precursor can have a purity level of 95% or greater. For example, in some embodiments, the precursor has a purity level of 95%-100%, 96%-100%, 97%-100%, 98%-100%, 99%-100%, 99.9%-100%, 99.99%-100%, 99.999%-100%, or 99.9999%-100%.

[0044] 1 is a flowchart of a method for making a precursor according to some embodiments. As shown in FIG. 1, the method for making a precursor may include, consist of, or consist essentially of one or more of the following steps: step 102 obtaining an amine compound; step 104 obtaining a silyl halide compound; and step 106 reacting an amine compound with a silyl halide compound to obtain a precursor. In some embodiments, the reaction proceeds by contacting the amine compound with the silyl halide compound in the presence of a base. In some embodiments, the reaction proceeds by contacting the amine compound with the silyl halide compound in a solvent containing a base.

[0045] The amine compound may comprise, consist of, or consist essentially of a compound containing one or more amine groups. In some embodiments, the amine compound comprises multiple amine groups. For example, the amine compound may be a polyamine compound. In some embodiments, the polyamine compound is selected from the group comprising, consisting of, consisting essentially of, or comprising ethylenediamine, propylenediamine, trimethylenediamine, triethylenediamine, methylpentanediamine, tetramethylenediamine, 1,3-diaminobutane, 2,3-diaminobutane, pentamethylenediamine, 2,4-diaminopentane, hexamethylenediamine, heptamethylenediamine, octamethylenediamine, nonamethylenediamine, 1,2,3-triaminopropane, hydrazine, tetra(aminomethyl)methane, or any combination thereof. In some embodiments, the polyamine compound is selected from the group comprising, consisting of, consisting essentially of, or comprising at least one of N-methylethylenediamine, N,N-dimethylethylenediamine, trimethylethylenediamine, N-ethylethylenediamine, N,N-diethylethylenediamine, triethylethylenediamine, or any combination thereof. In some embodiments, the polyamine compound is selected from the group comprising, consisting of, consisting essentially of, or comprising at least one of tris(2-aminoethyl)amine, diethylenetriamine, triethylenetetramine, tetraethylenepentamine, heptaethyleneoctamine, nonaethylenedecamine, N′,N′-bis(2-aminoethyl)ethane-1,2-diamine, or any combination thereof. In some embodiments, the polyamine compound comprises at least one of 1,2-ethanediamine; 1,2-propanediamine; 1,3-propanediamine; 1,4-butanediamine; 1,6-hexanediamine; 2-methyl-1,5-pentanediamine; 2,2(4),4-trimethylhexanediamine; 2,2,4-trimethyl-1,6-hexanediamine; 2,4,4-trimethyl-1,6-hexanediamine; or any combination thereof.

[0046] The silyl halide compound has the formula: TIFF0007789215000013.tif34170[In the formula, X is a halogen (e.g., F, Cl, Br, or I); R 1 , R 2 and R 3 each independently represents hydrogen, C1 to C 10 Straight chain alkyl, C3-C 10 including branched alkyl, C3-C8 cycloalkyl, aryl, or benzyl] The composition may comprise, consist of, or consist essentially of compounds of the formula:

[0047] In some embodiments, the silyl halide compound is selected from the group comprising, consisting of, consisting essentially of, or comprising at least one of dialkylsilyl halide, trialkylsilyl halide, monoalkyldiarylsilyl halide, triarylsilyl halide, or any combination thereof. In some embodiments, the silyl halide compound is selected from the group comprising, consisting of, consisting essentially of, or comprising at least one of dichlorosilane, trichlorosilane, triethylsilyl chloride, tert-butyldimethylsilyl chloride, trimethylsilane, trimethylchlorosilane, tetramethylsilyl chloride, triphenylsilyl chloride, tert-butyldiphenylsilyl chloride, or any combination thereof.

[0048] The base can include a compound capable of deprotonating the amine of the amine compound and substituting the halogen of the silyl halide compound, for example, the base comprises, consists of, or consists essentially of a non-nucleophilic organic amine. In some embodiments, the base is selected from the group comprising, consisting of, consisting essentially of, or comprising at least one of: trimethylamine; triethylamine; diisopropylethylamine; pyrrolidine; tetramethylguanidine; 1,4-diazabicyclo[2.2.2]octane (DABCO); 1,5-diazabicyclo[4.3.0]non-5-ene (DBN) (CAS No. 3001-72-7); 4-dimethylaminopyridine (DMAP) (CAS No. 1122-58-3); 1,5,7-triazabicyclo[4.4.0]dec-5-ene; (TBD) (CAS No. 5807-14-7); 1,8-diazabicyclo[5.4.0]undec-7-ene (DBU), (CAS No. 6674-22-2), or any combination thereof.

[0049] The solvent may include a polar aprotic solvent that does not participate in or otherwise interfere with the reaction, comprising, consisting of, or consisting essentially of at least one of tetrahydrofuran (THF), diethyl ether (EtO), toluene, dichloromethane (CHCl), n-hexane, ethyl acetate (EtOAc), or any combination thereof.

[0050] In some embodiments, the silicon precursor is selected from the group consisting of silicon precursors represented by the following reaction scheme: TIFF0007789215000014.tif31170[In the formula, n is 0 to 10, R 1 , R 2 and R 3 each independently represents hydrogen, C1 to C 10 Straight chain alkyl, C3-C 10 including branched alkyl, C3-C8 cycloalkyl, aryl, or benzyl; X is F, Cl, Br, or I; the base comprises at least one of trimethylamine; triethylamine; diisopropylethylamine; pyrrolidine; tetramethylguanidine; 1,4-diazabicyclo[2.2.2]octane (DABCO); 1,5-diazabicyclo[4.3.0]non-5-ene (DBN) (CAS No. 3001-72-7); 4-dimethylaminopyridine (DMAP) (CAS No. 1122-58-3); 1,5,7-triazabicyclo[4.4.0]dec-5-ene; (TBD) (CAS No. 5807-14-7); 1,8-diazabicyclo[5.4.0]undec-7-ene (DBU) (CAS No. 6674-22-2); or any combination thereof; the solvent comprises at least one of tetrahydrofuran (THF), diethyl ether (EtO), toluene, dichloromethane (CHCl), n-hexane, ethyl acetate (EtOAc), or any combination thereof; rt is room temperature (e.g., ambient temperature, e.g., a temperature between 20°C and 30°C (e.g., about 25°C)). It is prepared according to

[0051] In some embodiments, the silicon precursor is selected from the group consisting of silicon precursors represented by the following reaction scheme: TIFF0007789215000015.tif31170[In the formula, n is 0 to 10; R 1 , R 2 and R 3 each independently represents hydrogen, C1 to C 10 Straight chain alkyl, C3-C 10 including branched alkyl, C3-C8 cycloalkyl, aryl, or benzyl; X is F, Cl, Br, or I; the base comprises at least one of trimethylamine; triethylamine; diisopropylethylamine; pyrrolidine; tetramethylguanidine; 1,4-diazabicyclo[2.2.2]octane (DABCO); 1,5-diazabicyclo[4.3.0]non-5-ene (DBN) (CAS No. 3001-72-7); 4-dimethylaminopyridine (DMAP) (CAS No. 1122-58-3); 1,5,7-triazabicyclo[4.4.0]dec-5-ene (TBD) (CAS No. 5807-14-7); 1,8-diazabicyclo[5.4.0]undec-7-ene (DBU) (CAS No. 6674-22-2); or any combination thereof; The solvent comprises at least one of tetrahydrofuran (THF), diethyl ether (EtO), toluene, dichloromethane (CHCl), n-hexane, ethyl acetate (EtOAc), or any combination thereof; rt is room temperature (e.g., ambient temperature, e.g., a temperature between 20°C and 30°C (e.g., about 25°C)). It is prepared according to

[0052] 2 is a flowchart of a method for making a silicon-containing film, according to some embodiments. As shown in FIG. 2, the method for making a silicon-containing film may include, consist of, or consist essentially of one or more of the following steps: obtaining a precursor in step 202; obtaining at least one co-reactant precursor in step 204; volatilizing the precursor to obtain a vaporized precursor in step 206; volatilizing the at least one co-reactant precursor to obtain at least one vaporized co-reactant precursor in step 208; and contacting at least one of the vaporized precursor, the at least one vaporized co-reactant precursor, or any combination thereof, with a substrate under vapor deposition conditions in step 210 to form a silicon-containing film on the substrate.

[0053] Step 202 may include, consist of, or consist essentially of obtaining a precursor. The precursor may include, consist of, or consist essentially of any one or more of the precursors disclosed herein. Obtaining may include obtaining a vessel or other container containing the precursor. In some embodiments, the precursor may be obtained in a vessel or other container from which the precursor is vaporized.

[0054] Step 204 may include, consist of, or consist essentially of obtaining at least one co-reactant precursor. In some embodiments, the at least one co-reactant precursor comprises, consists of, consists essentially of, or is selected from the group comprising at least one of an oxidizing gas, a reducing gas, a hydrocarbon, or any combination thereof. The at least one co-reactant precursor can be selected to obtain a specific silicon-containing film. In some embodiments, the at least one co-reactant precursor may comprise, consist of, or consist essentially of at least one of N2, H2, NH3, N2H4, CH3HNNH2, CH3HNNHCH3, NCH3H2, NCH3CH2H2, N(CH3)2H, N(CH3CH2)2H, N(CH3)3, N(CH3CH2)3, Si(CH3)2NH, pyrazoline, pyridine, ethylenediamine, a group thereof, or any combination thereof. In some embodiments, the at least one co-reactant precursor may comprise, consist of, or consist essentially of at least one of H, O, O, HO, HO, NO, NO, NO, CO, CO, a carboxylic acid, an alcohol, a diol, a group thereof, or any combination thereof. In some embodiments, the at least one co-reactant precursor comprises, consists of, or consists essentially of at least one of methane, ethane, ethylene, acetylene, or any combination thereof. Obtaining may include obtaining a vessel or other container containing the at least one co-reactant precursor. In some embodiments, the at least one co-reactant precursor may be obtained in a vessel or other container from which the at least one co-reactant precursor is vaporized. In some embodiments, the method further includes an inert gas, such as, for example, at least one of argon, helium, nitrogen, or any combination thereof.

[0055] Step 206 may include, consist of, or consist essentially of volatilizing the precursor to obtain a vaporized precursor. The volatilizing may include, consist of, or consist essentially of heating the precursor sufficiently to obtain a vaporized precursor. In some embodiments, the volatilizing may include, consist of, or consist essentially of heating a container containing the precursor. In some embodiments, the volatilizing may include, consist of, or consist essentially of heating the precursor in a deposition chamber in which the vapor deposition process occurs. In some embodiments, the volatilizing may include, consist of, or consist essentially of heating a conduit for delivering the precursor, the vaporized precursor, or any combination thereof, for example, to the deposition chamber. In some embodiments, the volatilizing may include, consist of, or consist essentially of operating a vapor delivery system containing the precursor. In some embodiments, the volatilizing may include, consist of, or consist essentially of heating the precursor to a temperature sufficient to vaporize it to obtain a vaporized precursor. In some embodiments, volatilizing may include, consist of, or consist essentially of heating to a temperature below the decomposition temperature of at least one of the precursor, the vaporized precursor, or any combination thereof. In some embodiments, the precursor may be in the gas phase, in which case step 206 is optional and not required. For example, the precursor may include, consist of, or consist essentially of the vaporized precursor.

[0056] Step 208 may include, consist of, or consist essentially of volatilizing at least one co-reactant precursor to obtain at least one vaporized co-reactant precursor. In some embodiments, the volatilizing may include, consist of, or consist essentially of heating at least one co-reactant precursor sufficient to obtain at least one vaporized co-reactant precursor. In some embodiments, the volatilizing may include, consist of, or consist essentially of heating a container containing the at least one co-reactant precursor. In some embodiments, the volatilizing may include, consist of, or consist essentially of heating the at least one co-reactant precursor in a deposition chamber in which the vapor deposition process is performed. In some embodiments, the volatilizing may include, consist of, or consist essentially of heating a conduit for delivering the at least one co-reactant precursor, the at least one vaporized co-reactant precursor, or any combination thereof, for example, to the deposition chamber. In some embodiments, volatilizing may include, consist of, or consist essentially of operating a vapor delivery system containing at least one co-reactant precursor. In some embodiments, volatilizing may include, consist of, or consist essentially of heating at least one co-reactant precursor to a temperature sufficient to vaporize it to obtain at least one vaporized co-reactant precursor. In some embodiments, volatilizing may include, consist of, or consist essentially of heating to a temperature below the decomposition temperature of at least one of the at least one co-reactant precursor, the at least one vaporized co-reactant precursor, or any combination thereof. In some embodiments, at least one co-reactant precursor may be in the vapor phase, in which case step 108 is optional and not required. For example, at least one co-reactant precursor may include, consist of, or consist essentially of at least one vaporized co-reactant precursor.

[0057] Step 210 may include, consist of, or consist essentially of contacting the vaporized precursor and at least one vaporized co-reactant precursor with a substrate under vapor deposition conditions sufficient to form a silicon-containing film on the surface of the substrate. The contacting may occur in any system, apparatus, device, assembly, chamber, or component thereof suitable for a vapor deposition process, including, for example, but not limited to, a deposition chamber. The vaporized precursor and at least one co-reactant precursor may be contacted with the substrate simultaneously or at different times. For example, the vaporized precursor, the at least one vaporized co-reactant precursor, and the substrate may each be present in the deposition chamber at the same time. That is, in some embodiments, the contacting may include contemporaneous or simultaneous contacting of the vaporized precursor and at least one vaporized co-reactant precursor with the substrate. Alternatively, the vaporized precursor and at least one vaporized co-reactant precursor may each be present in the deposition chamber at different times. That is, in some embodiments, the contacting may include alternating and / or sequential contacting of a vaporized precursor with the substrate followed by contacting at least one vaporized co-reactant precursor with the substrate in one or more cycles.

[0058] The vapor deposition conditions may include, consist of, or consist essentially of a deposition temperature. The deposition temperature may be a temperature below the thermal decomposition temperature of at least one of the vaporized precursor, at least one vaporized co-reactant precursor, or any combination thereof. The deposition temperature may be sufficiently high to reduce or avoid condensation of at least one of the vaporized precursor, at least one vaporized co-reactant precursor, or any combination thereof. In some embodiments, the substrate may be heated to the deposition temperature. In some embodiments, the chamber or other container in which the substrate is contacted with the vaporized precursor and at least one vaporized co-reactant precursor is heated to the deposition temperature. In some embodiments, at least one of the vaporized precursor, at least one vaporized co-reactant precursor, or any combination thereof may be heated to the deposition temperature.

[0059] The deposition temperature may be between 200° C. and 2500° C. In some embodiments, the deposition temperature may be between 500° C. and 700° C. For example, in some embodiments, the deposition temperature may be between 500° C. and 680° C., 500° C. and 660° C., 500° C. and 640° C., 500° C. and 620° C., 500° C. and 600° C., 500° C. and 580° C., 500° C. and 560° C., 500° C. and 540° C., 500° C. and 520° C., 520° C. and 700° C., 540° C. and 700° C., 560° C. and 700° C., 580° C. and 700° C., 600° C. and 700° C., 620° C. and 700° C., 640° C. and 700° C., 660° C. and 700° C., or 680° C. and 700° C. In other embodiments, the deposition temperature may be, for example, but not limited to, 400°C to 2000°C, 500°C to 2000°C, 550°C to 2400°C, 600°C to 2400°C, 625°C to 2400°C, 650°C to 2400°C, 675°C to 2400°C, 700°C to 2400°C, 725°C to 2400°C, 750°C to 2400°C, 775°C to 2400°C, 800°C to 2400°C, 900°C to 2400°C, 925°C to 2400°C, 950°C to 2400°C, 975°C to 2400°C, 1000°C to 10 ... 00℃, 825℃~2400℃, 850℃~2400℃, 875℃~2400℃, 900℃~2400℃, 925℃~2400℃, 950℃~2400℃, 975℃~2400℃, 1000℃~2400℃, 1025℃~2400℃, 1050℃~2400℃, 1075℃~2400℃, 1100℃~2400℃, 1200℃~2400℃, 13 00℃~2400℃, 1400℃~2400℃, 1500℃~2400℃, 1600℃~2400℃, 1700℃~2400℃, 1800℃~2400℃, 1900℃~2400℃, 2000℃~2400℃, 2100℃~2400℃, 2200℃~2400℃, 2300℃~2400℃, 500℃~2000℃, 500℃~1900℃, 500 The temperature may be above 200°C to 2500°C, such as 500°C to 1800°C, 500°C to 1700°C, 500°C to 1600°C, 500°C to 1500°C, 500°C to 1400°C, 500°C to 1300°C, 500°C to 1200°C, 500°C to 1100°C, 500°C to 1000°C, 500°C to 1000°C, 500°C to 900°C, or 500°C to 800°C.

[0060] The vapor deposition conditions may include, consist of, or consist essentially of a deposition pressure. In some embodiments, the deposition pressure may include, consist of, or consist essentially of the vapor pressure of at least one of the vaporized precursor, at least one vaporized co-reactant precursor, or any combination thereof. In some embodiments, the deposition pressure may include, consist of, or consist essentially of the chamber pressure.

[0061] The deposition pressure may be a pressure between 0.001 Torr and 100 Torr. For example, in some embodiments, the deposition pressure may be a pressure between 1 Torr and 30 Torr, between 1 Torr and 25 Torr, between 1 Torr and 20 Torr, between 1 Torr and 15 Torr, between 1 Torr and 10 Torr, between 5 Torr and 50 Torr, between 5 Torr and 40 Torr, between 5 Torr and 30 Torr, between 5 Torr and 20 Torr, or between 5 Torr and 15 Torr. In other embodiments, the deposition pressure is between 1 Torr and 100 Torr, between 5 Torr and 100 Torr, between 10 Torr and 100 Torr, between 15 Torr and 100 Torr, between 20 Torr and 100 Torr, between 25 Torr and 100 Torr, between 30 Torr and 100 Torr, between 35 Torr and 100 Torr, between 40 Torr and 100 Torr, between 45 Torr and 100 Torr, between 50 Torr and 100 Torr, between 55 Torr and 100 Torr, between 60 Torr and 100 Torr, The pressure may be 0 Torr, 65 Torr to 100 Torr, 70 Torr to 100 Torr, 75 Torr to 100 Torr, 80 Torr to 100 Torr, 85 Torr to 100 Torr, 90 Torr to 100 Torr, 95 Torr to 100 Torr, 1 Torr to 95 Torr, 1 Torr to 90 Torr, 1 Torr to 85 Torr, 1 Torr to 80 Torr, 1 Torr to 75 Torr, or 1 Torr to 70 Torr. In other further embodiments, the deposition pressure may be a pressure between 1 mTorr and 100 mTorr, between 1 mTorr and 90 mTorr, between 1 mTorr and 80 mTorr, between 1 mTorr and 70 mTorr, between 1 mTorr and 60 mTorr, between 1 mTorr and 50 mTorr, between 1 mTorr and 40 mTorr, between 1 mTorr and 30 mTorr, between 1 mTorr and 20 mTorr, between 1 mTorr and 10 mTorr, between 100 mTorr and 300 mTorr, between 150 mTorr and 300 mTorr, between 200 mTorr and 300 mTorr, or between 150 mTorr and 250 mTorr, or between 150 mTorr and 225 mTorr.

[0062] The substrate may comprise, consist of, or consist essentially of at least one of Si, Co, Cu, Al, W, WN, WC, TiN, Mo, MoC, SiO2, W, SiN, WCN, Al2O3, AlN, ZrO2, La2O3, TaN, RuO2, IrO2, Nb2O3, YO3, hafnium oxide, or any combination thereof. In some embodiments, the silicon-containing film may comprise, consist of, or consist essentially of at least one of silicon, silicon nitride, silicon oxynitride, silicon oxide, silicon dioxide, silicon carbide, silicon carbonitride, silicon oxycarbonitride, carbon-doped silicon nitride, carbon-doped silicon oxide, carbon-doped silicon oxynitride, or any combination thereof. In some embodiments, the substrate may comprise other silicon-based substrates, such as, for example, one or more of a polysilicon substrate, a metal substrate, and a dielectric substrate.

[0063] Some embodiments relate to a silicon-containing film on the surface of a substrate. In some embodiments, the silicon-containing film comprises any film formed according to the method disclosed herein. In some embodiments, the silicon-containing film comprises any film prepared from the precursor disclosed herein.

[0064] Aspects Various embodiments are described below. It should be understood that any one or more of the features described in the following embodiments can be combined with any one or more of the other embodiments.

[0065] Embodiment 1. The precursor comprises an aliphatic hydrocarbon and at least one disilylamine group, wherein the at least one disilylamine group is bonded to the aliphatic hydrocarbon and the at least one disilylamine group does not comprise a silanide group.

[0066] Aspect 2. Aliphatic hydrocarbons are C1-C 10 2. The precursor of embodiment 1, comprising an alkane.

[0067] Aspect 3. The aliphatic hydrocarbon is a straight-chain C1-C 103. The precursor of embodiments 1 to 2, comprising an alkane.

[0068] Aspect 4. The aliphatic hydrocarbon is a branched C1-C 10 4. The precursor of embodiments 1 to 3, comprising an alkane.

[0069] Embodiment 5. At least one disilylamine group has the formula: TIFF0007789215000016.tif54170[In the formula, R 1 , R 2 and R 3 each independently represents hydrogen, C1 to C 10 Straight chain alkyl, C3-C 10 including branched alkyl, C3-C8 cycloalkyl, aryl, or benzyl] 5. The precursor of any one of embodiments 1 to 4, having the formula:

[0070] Embodiment 6. The precursor of embodiments 1-5, further comprising at least one silylamine group attached to the aliphatic hydrocarbon.

[0071] Embodiment 7. At least one silylamine group has the formula: TIFF0007789215000017.tif39170[In the formula, R 1 , R 2 and R 3 each independently represents hydrogen, C1 to C 10 Straight chain alkyl, C3-C 10 including branched alkyl, C3-C8 cycloalkyl, aryl, or benzyl] 7. The precursor of any one of embodiments 1 to 6, having the formula:

[0072] Aspect 8. The precursor has the formula: TIFF0007789215000018.tif125170[In the formula, n is 0 to 10; R 1 , R 2 and R 3 each independently represents hydrogen, C1 to C10 Straight chain alkyl, C3-C 10 including branched alkyl, C3-C8 cycloalkyl, aryl, or benzyl] 8. The precursor according to any one of embodiments 1 to 7, wherein the precursor is a compound of the formula:

[0073] Embodiment 9. The precursor of embodiments 1 to 8, wherein the precursor is a reaction product of a polyamine compound and a silyl halide compound.

[0074] Aspect 10. The precursor has the formula: The precursor according to any one of embodiments 1 to 9, which is a compound of TIFF0007789215000019.tif109170.

[0075] Embodiment 11. The precursor of embodiments 1 to 10, wherein the precursor is a liquid at room temperature.

[0076] Embodiment 12. A method for forming a silicon-containing film, comprising: obtaining a precursor comprising an aliphatic hydrocarbon and at least one disilylamine group, wherein at least one disilylamine group is attached to the aliphatic hydrocarbon, and the at least one disilylamine group does not comprise a silanide group; vaporizing the precursor to obtain a vaporized precursor; and contacting the vaporized precursor with a substrate under vapor deposition conditions to form a silicon-containing film on the substrate.

[0077] Embodiment 13. The method of embodiment 12, wherein the vapor deposition conditions comprise atomic layer deposition conditions.

[0078] Embodiment 14. The method of embodiments 12-13, wherein the vapor deposition conditions comprise plasma-enhanced atomic layer deposition conditions.

[0079] Embodiment 15. The method of embodiments 12-14, wherein the vapor deposition conditions comprise thermal atomic layer deposition conditions.

[0080] Embodiment 16. The method of embodiments 12-15, wherein the silicon-containing film comprises at least one of SiO, SiN, SiOC, SiCN, SiOCN, or any combination thereof.

[0081] Embodiment 17. The precursor has the formula: TIFF0007789215000020.tif55170[In the formula, n is 0 to 10; R 1 , R 2 and R 3 each independently represents hydrogen, C1 to C 10 Straight chain alkyl, C3-C 10 including branched alkyl, C3-C8 cycloalkyl, aryl, or benzyl] 17. The method of any one of embodiments 12 to 16, wherein the compound is

[0082] Embodiment 18. The precursor has the formula: TIFF0007789215000021.tif55170[In the formula, n is 0 to 10; R 1 , R 2 and R 3 each independently represents hydrogen, C1 to C 10 Straight chain alkyl, C3-C 10 including branched alkyl, C3-C8 cycloalkyl, aryl, or benzyl] 18. The method of any one of embodiments 12 to 17, wherein the compound is

[0083] Embodiment 19. The precursor has the formula: 19. The method of any one of embodiments 12 to 18, wherein the compound is a compound of TIFF0007789215000022.tif109170.

[0084] Embodiment 20. A method of making a precursor, comprising reacting a polyamine compound with a silyl halide compound in the presence of a base to form a vapor deposition precursor comprising an aliphatic hydrocarbon and at least one disilylamine group, wherein at least one disilylamine group is attached to the aliphatic hydrocarbon, and the at least one disilylamine group does not comprise a silanide group. [Example]

[0085] Silicon Precursor 1 To prepare silicon precursor 1 (described above), triethylamine (TEA, 276.8 mL, 2.0 mol) and ethylenediamine (33.4 mL, 0.5 mol) were added to a flame-dried vessel filled with dichloromethane (1.5 L). Chlorodimethylsilane (CDMS, 217.7 mL, 2.0 mol) was then added slowly dropwise. The reaction mixture was refluxed at 50 °C for 16 h under a N atmosphere. The reaction produced a white precipitate, which was quenched by filtration through a Celite pad with n-hexane. The filtrate was concentrated at 50 °C and 250 torr. Purification by fractional distillation at 80 °C and 1 torr afforded the desired product (118 g, 81% yield) as a colorless liquid. 1 H NMR (CDCl3): δ 4.44 - 4.41 (m, 4H), 2.73 (s, 4H), 0.16 (d, J = 0.1 Hz, 24H) ppm. See Figure 3.

Claims

1. A precursor comprising an aliphatic hydrocarbon and at least one disilylamine group, at least one disilylamine group is attached to an aliphatic hydrocarbon; at least one disilylamine group does not contain a silanide group; The precursor is of the formula A precursor to the compound

2. A method for obtaining a precursor comprising an aliphatic hydrocarbon and at least one disilylamine group, comprising: at least one disilylamine group is attached to an aliphatic hydrocarbon; at least one disilylamine group does not contain a silanide group; Obtaining a precursor; vaporizing the precursor to obtain a vaporized precursor; contacting the vaporized precursor with a substrate under vapor deposition conditions to form a silicon-containing film on the substrate; 1. A method for forming a silicon-containing film, comprising: The precursor is of the formula The method is a compound of

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