Substrate Processing Equipment

Abstract

To provide a technique capable of suppressing occurrence of a singularity in a temperature distribution within a substrate plane.SOLUTION: A substrate processing apparatus includes: a chamber; a substrate support part arranged inside the chamber and including a plurality of annular coolant passages arranged in a concentric circular state and a plurality of temperature sensors, each of the annular coolant passages having an entrance / exit structure that has an entrance part where a coolant flows into the annular coolant passages and an exit part where the coolant flows out from the annular coolant passages while the entrance part and the exit part overlap each other in plan view, the entrance / exit structure being arranged in a position shifted in a circumferential direction of the concentric circle with respect to an entrance / exit structure of other annular coolant passage among the plurality of annular coolant passages, and the plurality of temperature sensors being arranged along at least one of the circumferential direction and a radial direction of the plurality of annular coolant passages in plan view; and a coolant supply unit that supplies the coolant to each of the plurality of annular coolant passages and that independently controls a flow rate of the coolant flowing through each of the plurality of annular coolant passages on the basis of temperatures detected by the plurality of temperature sensors.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] SUMMARY OF THE INVENTION An exemplary embodiment of the present disclosure relates to a substrate processing apparatus. [Background technology]

[0002] 2. Description of the Related Art In a dry etching apparatus, a technique for controlling the temperature of a semiconductor substrate is disclosed in Patent Document 1. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 5-243191 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique for suppressing the occurrence of singular points in the temperature distribution within the surface of a substrate. [Means for solving the problem]

[0005] a cooling medium supply unit configured to supply a cooling medium to each of the plurality of annular refrigerant channels and to independently control a flow rate of the cooling medium flowing through each of the plurality of annular refrigerant channels based on temperatures detected by the plurality of temperature sensors; [Effects of the Invention]

[0006] According to one exemplary embodiment of the present disclosure, it is possible to provide a technique for suppressing the occurrence of singular points in the temperature distribution within the surface of a substrate. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is an explanatory diagram schematically illustrating an example of a plasma processing apparatus. [Figure 2] FIG. 2 is a diagram illustrating an example of the configuration of a temperature control module. [Figure 3] FIG. 2 is an explanatory diagram of a cross section showing an example of the internal configuration of a substrate support portion in plan view. [Figure 4] 10A and 10B are schematic diagrams showing examples of the configuration of a refrigerant inlet pipe and a refrigerant outlet pipe in the entrance / exit structure. [Figure 5] FIG. 2 is a cross-sectional view showing an example of the internal configuration of the entrance / exit structure. [Figure 6] FIG. 2 is a diagram illustrating an example of the configuration of a temperature control module. [Figure 7] 10A and 10B are schematic diagrams showing examples of the configuration of a refrigerant inlet pipe and a refrigerant outlet pipe in the entrance / exit structure. [Figure 8] FIG. 2 is a cross-sectional view showing an example of the internal configuration of the entrance / exit structure. [Figure 9] 10A and 10B are schematic diagrams showing examples of the configuration of a refrigerant inlet pipe and a refrigerant outlet pipe in the entrance / exit structure. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, each embodiment of the present disclosure will be described.

[0009] In one exemplary embodiment, there is provided a substrate processing apparatus comprising: a chamber; a substrate support disposed within the chamber, the substrate support having a plurality of concentrically arranged annular refrigerant flow paths and a plurality of temperature sensors, each of the plurality of annular refrigerant flow paths having an inlet portion through which the refrigerant flows into the annular refrigerant flow path and an outlet portion through which the refrigerant flows out of the annular refrigerant flow path, the inlet portion and the outlet portion being configured to overlap each other in a planar view, the inlet portion being offset in a circumferential direction of the concentric circle with respect to the inlet portion and the outlet portion of another annular refrigerant flow path of the plurality of annular refrigerant flow paths, and a coolant supply unit configured to supply coolant to each of the plurality of annular refrigerant flow paths and to independently control a flow rate of the coolant flowing through each of the plurality of annular refrigerant flow paths based on temperatures detected by the plurality of temperature sensors.

[0010] In one exemplary embodiment, the inlet / outlet structures included in each of the plurality of annular refrigerant channels are circumferentially shifted at intervals of 360° / N (N is the number of the inlet / outlet structures).

[0011] In one exemplary embodiment, the substrate support has an annular space disposed between two adjacent annular coolant channels of the plurality of annular coolant channels.

[0012] In one exemplary embodiment, the substrate processing apparatus further comprises a vacuum pump connected to the annular space.

[0013] In one exemplary embodiment, the substrate processing apparatus further comprises a heat transfer gas supply unit configured to supply a heat transfer gas to the annular space.

[0014] In one exemplary embodiment, the direction of refrigerant flow through one of the plurality of annular refrigerant flow paths is opposite to the direction of refrigerant flow through another of the plurality of annular refrigerant flow paths adjacent to the one of the annular refrigerant flow paths.

[0015] In one exemplary embodiment, the plurality of temperature sensors includes four or more temperature sensors along the circumference.

[0016] In one exemplary embodiment, the plurality of temperature sensors includes two or more temperature sensors along a radial direction.

[0017] In one exemplary embodiment, the inlet portion of the inlet / outlet structure includes a refrigerant inlet pipe leading from the outside of the annular refrigerant flow path to a space on the inlet side of the annular refrigerant flow path, and the outlet portion of the inlet / outlet structure includes a refrigerant outlet pipe leading from the space on the outlet side of the annular refrigerant flow path to the outside of the annular refrigerant flow path.

[0018] In one exemplary embodiment, the refrigerant inlet pipe and the refrigerant outlet pipe form a double pipe.

[0019] In one exemplary embodiment, the double pipe is configured such that the refrigerant outlet pipe passes inside the refrigerant inlet pipe.

[0020] In one exemplary embodiment, the refrigerant inlet and outlet tubes are configured such that one tube spirals around the other tube.

[0021] In one exemplary embodiment, the refrigerant outlet tube spirals around the refrigerant inlet tube.

[0022] In one exemplary embodiment, the refrigerant inlet tube and the refrigerant outlet tube include portions that diverge from each other as they move away from the annular refrigerant flow path.

[0023] Hereinafter, each embodiment of the present disclosure will be described in detail with reference to the drawings. In each drawing, the same or similar elements are designated by the same reference numerals, and redundant explanations will be omitted. Unless otherwise specified, the positional relationships, such as up, down, left, and right, will be described based on the positional relationships shown in the drawings. The dimensional ratios in the drawings do not represent actual ratios, and the actual ratios are not limited to the ratios shown in the drawings.

[0024] <An example of plasma processing apparatus 1> An example of the configuration of a plasma processing system will be described below. FIG. 1 is a diagram illustrating an example of the configuration of a capacitively coupled plasma processing apparatus. A plasma processing apparatus 1 according to an exemplary embodiment executes a plasma processing method for plasma processing a substrate. The plasma processing apparatus 1 is an example of a substrate processing apparatus.

[0025] The plasma processing system includes a capacitively coupled plasma processing apparatus 1 and a controller 2. The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber (also simply referred to as a "chamber") 10 serving as a substrate processing chamber, a gas supply unit 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space (substrate processing space) 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 has at least one gas inlet for supplying at least one processing gas to the plasma processing space 10s and at least one gas outlet for exhausting gas from the plasma processing space 10s. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from the plasma processing chamber 10.

[0026] The substrate support 11 includes a main body 50 and a ring assembly 51. The main body 50 has a central region 50a for supporting a substrate W and an annular region 50b for supporting the ring assembly 51. A wafer is an example of a substrate W. The annular region 50b of the main body 50 surrounds the central region 50a of the main body 50 in a plan view. The substrate W is disposed on the central region 50a of the main body 50, and the ring assembly 51 is disposed on the annular region 50b of the main body 50 so as to surround the substrate W on the central region 50a of the main body 50. Therefore, the central region 50a is also called a substrate support surface for supporting the substrate W, and the annular region 50b is also called a ring support surface for supporting the ring assembly 51.

[0027] In one embodiment, the main body 50 includes a base 60 and an electrostatic chuck 61. The base 60 includes a conductive member. The conductive member of the base 60 can function as a lower electrode. The electrostatic chuck 61 is disposed on the base 60. The electrostatic chuck 61 includes a ceramic member 61a and an electrostatic electrode 61b disposed within the ceramic member 61a. The ceramic member 61a has a central region 50a. In one embodiment, the ceramic member 61a also has an annular region 50b. Note that the annular region 50b may also be provided by another member surrounding the electrostatic chuck 61, such as an annular electrostatic chuck or an annular insulating member. In this case, the ring assembly 51 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 61 and the annular insulating member. An RF or DC electrode may also be disposed within the ceramic member 61a, in which case the RF or DC electrode functions as a lower electrode. When a bias RF signal or DC signal, which will be described later, is connected to the RF or DC electrode, the RF or DC electrode is also referred to as a bias electrode. It should be noted that both the conductive member of the base 60 and the RF or DC electrode may function as the two lower electrodes.

[0028] The ring assembly 51 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0029] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 61, the ring assembly 51, and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow path, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow path. In one embodiment, the flow path is formed in the base 60, and one or more heaters are disposed in the ceramic member 61a of the electrostatic chuck 61. The substrate support 11 may also include a heat transfer gas supply unit configured to supply a heat transfer gas between the backside of the substrate W and the central region 50a. In one embodiment, the substrate support 11 may include a substrate temperature adjustment member 100 having an annular coolant flow path 110 or an annular space 180, which will be described later. In one embodiment, the substrate temperature adjustment member 100 may be included in the base 60.

[0030] The substrate support 11 is provided with lifters (lift pins) not shown. In one embodiment, the lifters are arranged in a plurality of through holes that pass through the substrate support 11 in the vertical direction, and are moved vertically within the through holes by a drive device not shown. In one embodiment, the substrate W is carried in and out of the chamber 10 by a transport arm not shown. The lifter supports and raises and lowers the substrate W on the substrate support 11, exchanges the substrate W with the transport arm, and can place the substrate W on the substrate support 11.

[0031] The showerhead 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The showerhead 13 also includes an upper electrode. In addition to the showerhead 13, the gas inlet may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0032] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the showerhead 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include one or more flow modulation devices to modulate or pulse the flow rate of the at least one process gas.

[0033] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power), such as a source RF signal and a bias RF signal, to at least one lower electrode and / or at least one upper electrode. This causes a plasma to be formed from at least one process gas supplied to the plasma processing space 10s. Thus, the RF power supply 31 can function as at least a part of a plasma generating unit configured to generate a plasma from one or more process gases in the plasma processing chamber 10. Furthermore, supplying a bias RF signal to the at least one lower electrode generates a bias potential on the substrate W, thereby attracting ion components in the formed plasma to the substrate W.

[0034] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0035] The second RF generating unit 31b is coupled to at least one lower electrode via at least one impedance matching circuit and configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generating unit 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0036] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to at least one lower electrode and configured to generate a first DC signal. The generated first bias DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 32b is connected to at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0037] In various embodiments, at least one of the first and second DC signals may be pulsed. In this case, a sequence of DC-based voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof. In one embodiment, a waveform generator for generating a sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode. Thus, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have either positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one period. The first and second DC generating units 32a and 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided instead of the second RF generating unit 31b.

[0038] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve regulates the pressure in the plasma processing space 10s. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0039] The controller 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described in this disclosure. The controller 2 may be configured to control each element of the plasma processing apparatus 1 to perform various processes (plasma processing) described herein. The controller 2 may control the power supply 30, the coolant supply unit 102, the vacuum pump 190, the heat transfer gas supply unit 200, the exhaust system 40, and the like to perform plasma processing. In one embodiment, part or all of the controller 2 may be included in the plasma processing apparatus 1. The controller 2 may include, for example, a computer 2a. The computer 2a may include, for example, a processing unit (CPU: Central Processing Unit) 2a1, a storage unit 2a2, and a communication interface 2a3. The processing unit 2a1 may be configured to read a program from the storage unit 2a2 and execute the read program to perform various control operations. The program may be stored in the storage unit 2a2 in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit 2a2 and is read from the storage unit 2a2 and executed by the processing unit 2a1. The medium may be various storage media readable by the computer 2a, or a communication line connected to the communication interface 2a3. The storage unit 2a2 may include a random access memory (RAM), a read only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0040] Fig. 2 is an explanatory diagram showing an example of the configuration of a temperature control module of the substrate support part 11. Fig. 3 is an explanatory diagram of a cross section showing an example of the internal configuration of the substrate support part 11 in a plan view. As shown in Fig. 2, in one embodiment, the plasma processing apparatus 1 includes a substrate temperature control member 100, a plurality of temperature sensors 101, and a coolant supply unit 102.

[0041] In one embodiment, the substrate temperature adjustment member 100 is included in the disk-shaped base 60 of the substrate support 11. As shown in FIG. 3 , the substrate temperature adjustment member 100 has a plurality of annular refrigerant channels 110 arranged concentrically on the substrate support 11. In one embodiment, the plurality of annular refrigerant channels 110 are arranged inside the base 60 of the substrate support 11. In one embodiment, the substrate temperature adjustment member 100 has five annular refrigerant channels 110a, 110b, 110c, 110d, and 110e. The annular refrigerant channels 110a, 110b, 110c, 110d, and 110e are arranged at equal intervals in the radial direction X from the center P of the substrate support 11. The annular refrigerant channels 110a, 110b, 110c, 110d, and 110e have inlet / outlet structures 120a, 120b, 120c, 120d, and 120e (collectively referred to as "inlet / outlet structures 120") that allow the refrigerant to enter and exit, respectively.

[0042] The inlet / outlet structures 120a, 120b, 120c, 120d, and 120e each have an inlet portion 130a, 130b, 130c, 130d, and 130e (collectively referred to as "inlet portion 130") through which the refrigerant flows into the annular refrigerant flow paths 110a, 110b, 110c, 110d, and 110e, and an outlet portion 140a, 140b, 140c, 140d, and 140e (collectively referred to as "outlet portion 140") through which the refrigerant flows out after passing through the annular refrigerant flow paths 110a, 110b, 110c, 110d, and 110e. The inlet portion 130 and the outlet portion 140 of the inlet / outlet structure 120 are arranged to overlap each other in a plan view. In one embodiment, the inlet portion 130 and the outlet portion 140 may be arranged so that heat from the inlet portion 130 and the heat from the outlet portion 140 interfere with each other.

[0043] The inlet / outlet structures 120 are arranged so as to be offset in the circumferential direction Y of the annular refrigerant flow path 110 (substrate support 11) relative to the inlet / outlet structures 120 of other annular refrigerant flow path 110. In one embodiment, the inlet / outlet structures 120 are not collinear in the radial direction X of the annular refrigerant flow path 110 (substrate support 11), but are arranged so as to be offset in the circumferential direction Y at intervals of 360° / N (N is the number of inlet / outlet structures 120). In one embodiment, the inlet / outlet structures 120a, 120b, 120c, 120d, and 120e are arranged at intervals of 72° in the circumferential direction Y.

[0044] In one embodiment, the annular refrigerant flow paths 110 are configured so that the refrigerant flows in the opposite direction to the adjacent annular refrigerant flow paths 110 in the radial direction X. In one embodiment, in plan view, the refrigerant flows clockwise in the annular refrigerant flow paths 110a, 110c, and 110e, and the refrigerant flows counterclockwise in the annular refrigerant flow paths 110a, 110c, and 110e.

[0045] In one embodiment, the plurality of temperature sensors 101 are provided on the substrate support 11. As shown in Fig. 2, in one embodiment, the temperature sensors 101 are disposed on an upper portion of a base 60 of the substrate support 11. As shown in Fig. 3, the plurality of temperature sensors 101 are disposed between adjacent annular refrigerant channels 110a, 110b, 110c, 110d, and 110e in the radial direction X. The temperature sensors 101 are also disposed outside the outermost annular refrigerant channel 110e.

[0046] In one embodiment, the multiple temperature sensors 101 include two or more temperature sensors arranged along the circumferential direction Y on the same circumference centered on the center P of the substrate support 11. The multiple temperature sensors 101 on the same circumference may be arranged at equal intervals. The multiple temperature sensors 101 include two or more temperature sensors arranged along the radial direction X of the substrate support 11. In one embodiment, the multiple temperature sensors 101 include five temperature sensors arranged on the same radius in the radial direction X of the substrate support 11. The multiple temperature sensors 101 on the same radius may be arranged at approximately equal intervals. In one embodiment, the multiple temperature sensors 101 are arranged above annular space 180, which will be described later.

[0047] In one embodiment, as shown in FIG. 2, the refrigerant supply unit 102 includes a chiller 160, a first refrigerant flow path 161, a flow control unit 162, and a second refrigerant flow path 163.

[0048] The first refrigerant flow path 161 connects the chiller 160 to each of the inlet / outlet structures 120a, 120b, 120c, 120d, and 120e. The first refrigerant flow path 161 communicates with the inlet portion 130 of the inlet / outlet structure 120 in the annular refrigerant flow path 110.

[0049] In one embodiment, the flow control unit 162 is provided in the first refrigerant flow path 161. In one embodiment, the flow control unit 162 can adjust the flow rate of the refrigerant supplied to each of the port structures 120a, 120b, 120c, 120d, and 120e based on the temperature detected by the temperature sensor 101.

[0050] The second refrigerant flow path 163 connects each of the inlet / outlet structures 120a, 120b, 120c, 120d, and 120e to the chiller 160. The second refrigerant flow path 163 communicates with the outlet portion 140 of the inlet / outlet structure 120 in the annular refrigerant flow path 110.

[0051] The chiller 160 can set the refrigerant to a target temperature and supply the refrigerant to each annular refrigerant flow path 110 through the first refrigerant flow path 161. The chiller 160 can return the refrigerant that has passed through each annular refrigerant flow path 110 to the chiller 160 through the second refrigerant flow path 163.

[0052] The refrigerant supply unit 102 is not limited to the above configuration, and may have, for example, a chiller 160 for each annular refrigerant flow path 110. In this case, the refrigerant may be supplied from the chiller 160 to each annular refrigerant flow path 110 individually.

[0053] In one embodiment, the substrate support 11 may include a plurality of annular spaces 180 disposed between adjacent annular coolant channels 110 in the radial direction X. In one embodiment, the plurality of annular spaces 180 are disposed inside the base 60 of the substrate support 11. In one embodiment, the plurality of annular spaces 180 include four annular spaces 180a, 180b, 180c, and 180d disposed between the annular coolant channels 110a, 110b, 110c, 110d, and 110e. As shown in FIG. 3 , the annular spaces 180a, 180b, 180c, and 180d are disposed concentrically about the center P of the substrate support 11.

[0054] As shown in FIG. 2 , the annular space 180 is connected to a vacuum pump 190 for evacuating the annular space 180 (vacuum insulating it) and a heat transfer gas supply unit 200 for supplying a heat transfer gas to the annular space 180. In one embodiment, the vacuum pump 190 and the annular space 180 are connected by a first flow path 210. A valve 211 is provided in the first flow path 210. The heat transfer gas supply unit 200 and the annular space 180 are connected by a second flow path 220. A valve 221 is provided in the second flow path 220. In one embodiment, the vacuum pump 190 can selectively evacuate the annular space 180 and the heat transfer gas supply unit 200 can supply a heat transfer gas to the annular space 180. The vacuum pump 190 can evacuate the entire annular space 180 at once. The heat transfer gas supply unit 200 can supply a heat transfer gas to the entire annular space 180 at once.

[0055] Fig. 4 shows a schematic diagram of an example of a gateway structure 120 provided on the substrate support 11. Fig. 5 shows an example of a cross section of the gateway structure 120.

[0056] In one embodiment, as shown in FIG. 4 , the inlet / outlet structure 120 constitutes a part of the annular refrigerant flow path 110 in the substrate support 11. The inlet / outlet structure 120 may be formed separately from or integrally with other parts of the annular refrigerant flow path 110. In one embodiment, the inlet / outlet structure 120 has a three-dimensional shape that is approximately a rectangular parallelepiped. The inlet / outlet structure 120 has a space A1 on the inlet side of the annular refrigerant flow path 110 in one part in the circumferential direction Y, and a space A2 on the outlet side of the annular refrigerant flow path 110 in the other part in the circumferential direction Y. In the inlet / outlet structure 120, the space A1 on the inlet side of the annular refrigerant flow path 110 and the space A2 on the outlet side of the annular refrigerant flow path 110 are isolated from each other so as not to communicate with each other.

[0057] The inlet / outlet structure 120 has a refrigerant inlet pipe 300 that communicates with a space A1 on the inlet side of the annular refrigerant flow path 110 from the outside of the annular refrigerant flow path 110, and a refrigerant outlet pipe 301 that communicates with a space A2 on the outlet side of the annular refrigerant flow path 110 from the outside of the inlet / outlet structure 120. In one embodiment, the inlet section 130 includes the refrigerant inlet pipe 300, and the outlet section 140 includes the refrigerant outlet pipe 301. The flow path of the refrigerant inlet pipe 300 and the flow path of the refrigerant outlet pipe 301 are isolated from each other so as not to communicate with each other.

[0058] In one embodiment, the refrigerant inlet pipe 300 and the refrigerant outlet pipe 301 form a double pipe. In one embodiment, the refrigerant inlet pipe 300 has a larger inner diameter than the refrigerant outlet pipe 301. The refrigerant inlet pipe 300 communicates with the first refrigerant flow path 161. In one embodiment, the refrigerant inlet pipe 300 extends vertically upward from an inlet 350 formed on the lower surface of the inlet / outlet structure 120, then bends at a right angle and communicates with a space A1 on the inlet side of the annular refrigerant flow path 110.

[0059] In one embodiment, the refrigerant outlet pipe 301 has a smaller outer diameter than the refrigerant inlet pipe 300 and passes through the inside of the refrigerant inlet pipe 300. In one embodiment, the refrigerant outlet pipe 301 enters the inside of the refrigerant inlet pipe 300 from the space A2 on the outlet side of the annular refrigerant flow path 110, then bends at a right angle and runs downward to an outlet 351 formed on the underside of the port structure 120. The outlet 351 of the refrigerant outlet pipe 301 communicates with the second refrigerant flow path 163. In one embodiment, the refrigerant outlet pipe 301 and the refrigerant inlet pipe 300 are arranged coaxially in the vertical direction. As shown in FIG. 5, the refrigerant inlet pipe 300 and the refrigerant outlet pipe 301 have the same central axis.

[0060] <An example of a plasma processing method> The plasma processing method includes an etching process that uses plasma to etch a film on a substrate W. In one embodiment, the plasma processing method is performed by a control unit 2 in a plasma processing apparatus 1.

[0061] First, the substrate W is carried into the chamber 10 by the transport arm, placed on the substrate support portion 11 by the lifter, and held by suction on the substrate support portion 11 as shown in FIG.

[0062] Next, the processing gas is supplied to the shower head 13 by the gas supply unit 20, and is then supplied to the plasma processing space 10s from the shower head 13. The processing gas supplied at this time includes a gas that generates active species necessary for etching the substrate W.

[0063] One or more RF signals are supplied to the upper electrode and / or the lower electrode from the RF power supply 31. The atmosphere in the plasma processing space 10s may be exhausted through the gas exhaust port 10e, and the pressure inside the plasma processing space 10s may be reduced. This generates plasma in the plasma processing space 10s, and the substrate W is etched.

[0064] During plasma processing, in the temperature control module shown in FIG. 2 , a coolant is supplied by a coolant supply unit 102 to each of the annular coolant channels 110a, 110b, 110c, 110d, and 110e of the substrate support 11 to cool the substrate support 11. The coolant is supplied from a chiller 160 through a first coolant channel 161 to the annular coolant channel 110 via the inlet / outlet structure 120. The flow rate of the coolant supplied to each annular coolant channel 110 is independently controlled by a flow control unit 162. The coolant passes through a coolant inlet pipe 300 of the inlet / outlet structure 120 and enters a space A1 on the inlet side of the annular coolant channel 110. The coolant that has entered the space A1 of the annular coolant channel 110 circulates around the annular coolant channel 110. After passing through the annular coolant channel 110, the coolant passes through a space A2 on the outlet side of the annular coolant channel 110 and exits the substrate support 11 through a coolant outlet pipe 301 of the inlet / outlet structure 120. The refrigerant is returned to the chiller 160 through a second refrigerant flow path 163 .

[0065] The temperature sensor 101 detects the temperature of the substrate support part 11. Based on the temperature detected by the temperature sensor 101, the coolant supply unit 102 controls the flow rate of the coolant supplied to each annular coolant flow path 110 so that the temperature of the substrate support surface of the substrate support part 11 becomes uniform.

[0066] During plasma processing, the vacuum pump 190 evacuates each of the annular spaces 180a, 180b, 180c, and 180d of the substrate support 11, or the heat transfer gas supply unit 200 supplies a heat transfer gas to each of the annular spaces 180a, 180b, 180c, and 180d of the substrate support 11. When the annular space 180 is evacuated, the insulating properties of the annular space 180 are improved, and heat transfer between the multiple annular refrigerant channels 110 is suppressed. When the heat transfer gas is supplied to the annular space 180, the heat transfer properties of the annular space 180 are improved, and heat transfer between the multiple annular refrigerant channels 110 is promoted.

[0067] According to this exemplary embodiment, the substrate support 11 includes a substrate temperature adjustment member 100 and a plurality of temperature sensors 101. The substrate temperature adjustment member 100 includes a plurality of concentric annular refrigerant channels 110. Each of the plurality of annular refrigerant channels 110 includes an inlet / outlet structure 120. The inlet / outlet structures 120 have inlet portions 130 and outlet portions 140 that overlap each other in a plan view. The inlet / outlet structures 120 are arranged offset in the circumferential direction Y with respect to other inlet / outlet structures 120 of other annular refrigerant channels 110. The plurality of temperature sensors 101 are arranged along the circumferential direction Y and the radial direction X between the plurality of annular refrigerant channels 110 in a plan view. The refrigerant supply unit 102 supplies a refrigerant to each of the plurality of annular refrigerant channels 110 and independently controls the flow rate of the refrigerant flowing through each of the annular refrigerant channels 110 based on the temperature sensors 101.

[0068] The coolant flowing through the annular coolant flow path 110 in the substrate support unit 11 absorbs heat generated by the plasma, causing the temperature of the coolant near the outlet to be higher than the temperature near the inlet. According to this exemplary embodiment, the inlet / outlet structure 120 has an inlet portion 130 and an outlet portion 140 that overlap each other in a plan view. This causes heat generated by the coolant near the inlet of the annular coolant flow path 110 and heat generated by the coolant near the outlet of the annular coolant flow path 110 to interfere with each other in the substrate support unit 11, thereby equalizing the temperatures near the inlet portion 130 and the outlet portion 140 of the coolant in the substrate support unit 11. This prevents the formation of cool spots with locally low temperatures and hot spots with locally high temperatures in the substrate support unit 11. Furthermore, the inlet / outlet structures 120 are offset in the circumferential direction Y relative to the inlet / outlet structures 120 of other annular coolant flow paths 110. Since the multiple inlet / outlet structures 120 are offset in the circumferential direction Y, it is possible to prevent temperature variations on the substrate support surface of the substrate support unit 11 due to the inlet / outlet structures 120. Furthermore, according to this exemplary embodiment, the plurality of temperature sensors 101 are arranged along the circumferential direction Y and the radial direction X of the plurality of annular refrigerant flow paths 110 in a plan view, and the refrigerant supply unit 102 independently controls the flow rate of the refrigerant flowing through each of the annular refrigerant flow paths 110 based on the plurality of temperature sensors 101, thereby making it possible to uniformize the temperature on the substrate support surface of the substrate support part 11.

[0069] According to this exemplary embodiment, the gateway structures 120 are arranged at intervals of 360° / N (N is the number of gateway structures 120) so as to be offset in the circumferential direction Y. This makes it possible to prevent temperature unevenness on the substrate support surface of the substrate support portion 11 due to the gateway structures 120.

[0070] According to this exemplary embodiment, the substrate support 11 has an annular space 180 disposed between adjacent annular refrigerant channels 110 in the radial direction X. This allows heat exchange between the plurality of annular refrigerant channels 110 to be controlled. For example, by evacuating the annular space 180 with a vacuum pump 190, the insulation between the plurality of annular refrigerant channels 110 can be improved. Furthermore, by supplying a heat transfer gas to the annular space 180 with a heat transfer gas supply unit 200, the heat transfer between the plurality of annular refrigerant channels 110 can be improved. Note that the plasma processing apparatus 1 may include both the vacuum pump 190 connected to the annular space 180 and the heat transfer gas supply unit 200 that supplies a heat transfer gas to the annular space 180, or may include only one of them.

[0071] The coolant flowing through the space near the inlet of the annular coolant flow channel 110 has a lower temperature than the coolant flowing through the space near the outlet of the annular coolant flow channel 110. According to this exemplary embodiment, the annular coolant flow channel 110 is configured so that the coolant flows in the opposite direction to the adjacent annular coolant flow channel 110 in the radial direction X. This causes the direction of the coolant temperature gradient to be reversed between the adjacent annular coolant flow channels 110, thereby making it possible to uniform the temperature on the substrate support surface of the substrate support 11.

[0072] According to this exemplary embodiment, the plurality of temperature sensors 101 includes four or more temperature sensors along the circumferential direction Y and two or more temperature sensors along the radial direction X. The coolant supply unit 102 independently controls the flow rate of the coolant flowing through each of the annular coolant channels 110 based on the temperatures detected by the plurality of temperature sensors 101, thereby making it possible to uniformize the temperature on the substrate support surface of the substrate support 11.

[0073] According to this exemplary embodiment, the inlet / outlet structure 120 further includes a refrigerant inlet pipe 300 that connects from the outside of the annular refrigerant flow path 110 to the inlet-side space A1 of the annular refrigerant flow path 110, and a refrigerant outlet pipe 301 that connects from the outlet-side space A2 of the annular refrigerant flow path 110 to the outside of the annular refrigerant flow path 110, where the refrigerant inlet pipe 300 and the refrigerant outlet pipe 301 form a double pipe. In this case, heat generated by the refrigerant exiting the annular refrigerant flow path 110 and heat generated by the refrigerant entering the annular refrigerant flow path 110 tend to interfere with each other in the substrate support 11, thereby equalizing the temperatures near the inlet portion 130 and the outlet portion 140 of the refrigerant in the substrate support 11. This prevents the formation of locally low-temperature cool spots and locally high-temperature hot spots in the substrate support 11.

[0074] According to this exemplary embodiment, the double pipe is configured so that the refrigerant outlet pipe 301 passes through the inside of the refrigerant inlet pipe 300. In this case, the flow rate of the refrigerant passing through the refrigerant outlet pipe 301 is faster than the flow rate of the refrigerant passing through the refrigerant inlet pipe 300, so that the refrigerant before entering the annular refrigerant flow path 110 can be prevented from being heated by the refrigerant exiting the annular refrigerant flow path 110.

[0075] In one embodiment, the multiple annular spaces 180a, 180b, 180c, and 180d may be independently evacuated. FIG. 6 illustrates an example of a configuration in which each annular space 180 is evacuated independently. In one embodiment, the annular spaces 180a, 180b, 180c, and 180d are not connected to one another. In one embodiment, the vacuum pump 190 is connected to the annular spaces 180a, 180b, 180c, and 180d by multiple first flow paths 210a, 210b, 210c, and 210d. In one embodiment, the first flow paths 210a, 210b, 210c, and 210d are provided with valves 211a, 211b, 211c, and 211d, respectively. Note that multiple vacuum pumps 190 may be provided, each connected to a corresponding annular space 180.

[0076] In one embodiment, the heat transfer gas may be supplied independently to each of the multiple annular spaces 180a, 180b, 180c, and 180d. In one embodiment, the second flow path 220 connects the heat transfer gas supply unit 200 to each of the annular spaces 180a, 180b, 180c, and 180d. The second flow path 220 is provided with a gas control unit 400. The gas control unit 400 can supply the heat transfer gas supplied from the heat transfer gas supply unit 200 to each of the annular spaces 180a, 180b, 180c, and 180d at a predetermined flow rate. The heat transfer gas supply unit 200 may be connected to each of the annular spaces 180 by multiple second flow paths. Alternatively, there may be multiple heat transfer gas supply units 200, each connected to a corresponding annular space 180.

[0077] According to this exemplary embodiment, during plasma processing, a vacuum is drawn to some of the annular spaces 180a, 180b, 180c, and 180d to increase the thermal insulation between some of the annular coolant channels 110, and a heat transfer gas is supplied to some of the annular spaces 180a, 180b, 180c, and 180d to increase the thermal conductivity between some of the annular coolant channels 110. In regions where the temperature on the substrate support surface is stable, the thermal insulation between adjacent annular coolant channels 110 can be increased, and in regions where the temperature on the substrate support surface is unstable, the thermal conductivity between adjacent annular coolant channels 110 can be increased. This allows for a uniform temperature on the substrate support surface.

[0078] 7 is a schematic diagram showing another example of the configuration of the refrigerant inlet pipe 300 and the refrigerant outlet pipe 301 in the inlet / outlet structure 120. In one embodiment, the refrigerant inlet pipe 300 and the refrigerant outlet pipe 301 in the inlet / outlet structure 120 may include portions that separate from each other as they move away from the spaces A1 and A2 of the annular refrigerant flow path 110. The refrigerant inlet pipe 300 may extend obliquely relative to the vertical direction in the portion extending downward from the space A1 of the annular refrigerant flow path 110. As the refrigerant inlet pipe 300 extends downward from the space A1 of the annular refrigerant flow path 110, it may extend obliquely toward the downstream side in the circumferential direction Y of the annular refrigerant flow path 110 (to the right in FIG. 7).

[0079] The refrigerant outlet pipe 301 may extend obliquely relative to the vertical direction in a portion extending downward from the space A2 of the annular refrigerant flow path 110. As the refrigerant outlet pipe 301 extends downward from the space A1 of the annular refrigerant flow path 110, the refrigerant outlet pipe 301 may extend obliquely in the opposite direction to the refrigerant inlet pipe 300, i.e., toward the upstream side of the circumferential direction Y of the annular refrigerant flow path 110 (to the left in FIG. 7 ). The refrigerant outlet pipe 301 may exit the refrigerant inlet pipe 300 midway along its downward extension. According to this exemplary embodiment, it is possible to prevent the refrigerant before entering the annular refrigerant flow path 110 from being heated by the refrigerant exiting the annular refrigerant flow path 110.

[0080] The flow path diameter of the refrigerant outlet pipe 301 may gradually increase toward the downstream side. The flow path diameter of the refrigerant outlet pipe 301 may ultimately become the same as that of the refrigerant inlet pipe 300. The flow path diameter of the refrigerant inlet pipe 300 may be constant.

[0081] In the above embodiment, the central axes of the double pipes formed by the refrigerant inlet pipe 300 and the refrigerant outlet pipe 301 coincide with each other, but the central axes may be offset as shown in Fig. 8. In one embodiment, the central axis of the refrigerant outlet pipe 301 may be offset from the central axis of the refrigerant inlet pipe 300 toward the space A2 side in the circumferential direction Y of the annular refrigerant flow path 110 (to the left in Fig. 8).

[0082] 9 is an explanatory diagram showing another example configuration of the refrigerant inlet pipe 300 and the refrigerant outlet pipe 301. In one embodiment, the refrigerant inlet pipe 300 and the refrigerant outlet pipe 301 may be arranged so that one pipe passes helically around the other pipe. In one embodiment, the refrigerant outlet pipe 301 passes helically around the refrigerant inlet pipe 300. In one embodiment, the inlet section 130 includes the refrigerant inlet pipe 300, and the outlet section 140 includes the refrigerant outlet pipe 301. Note that a case in which one of the refrigerant inlet pipe 300 and the refrigerant outlet pipe 301 passes helically around the other pipe, as in this embodiment, is also included in cases in which the inlet section 130 and the outlet section 140 overlap each other in a plan view. When the inlet portion 130 and the outlet portion 140 overlap each other in a planar view, this includes a case where at least a portion of the refrigerant inlet pipe 300 and the refrigerant outlet pipe 301 pass so as to overlap each other in a planar view, a case where one of the refrigerant inlet pipe 300 and the refrigerant outlet pipe 301 passes around the other in a planar view, and a case where at least a portion of the refrigerant inlet pipe 300 and the refrigerant outlet pipe 301 are close to each other in a planar view.

[0083] In one embodiment, a plurality of inlet / outlet structures 120 may be provided in one circumferentially aligned annular refrigerant flow path 110. In one embodiment, a plurality of inlet / outlet structures 120 may be provided in each of the annular refrigerant flow paths 110a, 110b, 110c, 110d, and 110e. In one embodiment, the plurality of inlet / outlet structures 120 may be provided at equal intervals in each of the annular refrigerant flow paths 110a, 110b, 110c, 110d, and 110e.

[0084] In the exemplary embodiments described above, the plasma processing apparatus may be modified in various ways without departing from the scope and spirit of the present disclosure. For example, some components in one embodiment may be added to other embodiments within the scope of ordinary creativity of a person skilled in the art. Also, some components in one embodiment may be replaced with corresponding components in other embodiments.

[0085] (Appendix 1) a chamber; a substrate support disposed within the chamber, the substrate support having a plurality of concentrically arranged annular refrigerant flow paths and a plurality of temperature sensors, each of the plurality of annular refrigerant flow paths having an inlet portion through which a refrigerant flows into the annular refrigerant flow path and an outlet portion through which the refrigerant flows out of the annular refrigerant flow path, the inlet portion and the outlet portion being configured to overlap each other in a plan view, the inlet portion and the outlet portion being positioned at a position offset in a circumferential direction of the concentric circles with respect to the inlet portion and the outlet portion of another annular refrigerant flow path among the plurality of annular refrigerant flow paths, and the plurality of temperature sensors being disposed along at least one of a circumferential direction and a radial direction of the plurality of annular refrigerant flow paths in a plan view; a refrigerant supply unit configured to supply a refrigerant to each of the plurality of annular refrigerant flow paths and to independently control a flow rate of the refrigerant flowing through each of the plurality of annular refrigerant flow paths based on temperatures detected by the plurality of temperature sensors; A substrate processing apparatus comprising:

[0086] (Appendix 2) 2. The substrate processing apparatus according to claim 1, wherein the inlet / outlet structures included in each of the plurality of annular refrigerant flow paths are arranged circumferentially offset at intervals of 360° / N (where N is the number of the inlet / outlet structures).

[0087] (Appendix 3) 3. The substrate processing apparatus according to claim 1, wherein the substrate support portion has an annular space disposed between two adjacent annular refrigerant channels among the plurality of annular refrigerant channels.

[0088] (Appendix 4) 4. The substrate processing apparatus of claim 3, further comprising a vacuum pump connected to the annular space.

[0089] (Appendix 5) 5. The substrate processing apparatus of claim 3, further comprising a heat transfer gas supply unit configured to supply a heat transfer gas to the annular space.

[0090] (Appendix 6) 6. The substrate processing apparatus of claim 1, wherein a direction of the coolant flowing through one of the plurality of annular coolant flow paths is opposite to a direction of the coolant flowing through another of the plurality of annular coolant flow paths adjacent to the one annular coolant flow path.

[0091] (Appendix 7) 7. The substrate processing apparatus according to claim 1, wherein the plurality of temperature sensors includes four or more temperature sensors along the circumferential direction.

[0092] (Appendix 8) 8. The substrate processing apparatus according to claim 1, wherein the plurality of temperature sensors includes two or more temperature sensors along the radial direction.

[0093] (Appendix 9) the inlet portion of the inlet / outlet structure includes a refrigerant inlet pipe that communicates from an outside of the annular refrigerant flow path to a space on an inlet side of the annular refrigerant flow path, 9. The substrate processing apparatus according to claim 1, wherein the outlet portion of the inlet / outlet structure includes a refrigerant outlet pipe leading from a space on the outlet side of the annular refrigerant flow path to the outside of the annular refrigerant flow path.

[0094] (Appendix 10) 10. The substrate processing apparatus according to claim 9, wherein the coolant inlet pipe and the coolant outlet pipe form a double pipe.

[0095] (Appendix 11) 11. The substrate processing apparatus according to claim 10, wherein the double pipe is configured such that the coolant outlet pipe passes through the inside of the coolant inlet pipe.

[0096] (Appendix 12) 10. The substrate processing apparatus of claim 9, wherein the coolant inlet pipe and the coolant outlet pipe are configured such that one pipe passes around the other pipe in a spiral shape.

[0097] (Appendix 13) 13. The substrate processing apparatus of claim 12, wherein the coolant outlet pipe spirals around the coolant inlet pipe.

[0098] (Appendix 14) 14. The substrate processing apparatus according to claim 9, wherein the coolant inlet pipe and the coolant outlet pipe include portions that become increasingly separated from each other as they move away from the annular coolant flow path. [Explanation of symbols]

[0099] 1: Plasma processing apparatus, 10: Chamber, 11: Substrate support, 100: Substrate temperature control member, 101: Temperature sensor, 102: Coolant supply unit, 110: Annular coolant flow path, 120: Inlet / outlet structure, 130: Inlet portion, 140: Outlet portion, 300: Coolant inlet pipe, 301: Coolant outlet pipe, W: Substrate

Claims

1. a chamber; a substrate support disposed within the chamber, the substrate support having a plurality of concentrically arranged annular refrigerant flow paths and a plurality of temperature sensors, each of the plurality of annular refrigerant flow paths having an inlet portion through which a refrigerant flows into the annular refrigerant flow path and an outlet portion through which the refrigerant flows out of the annular refrigerant flow path, the inlet portion and the outlet portion being configured to overlap each other in a plan view, the inlet portion and the outlet portion being positioned at a position offset in a circumferential direction of the concentric circles with respect to the inlet portion and the outlet portion of another annular refrigerant flow path among the plurality of annular refrigerant flow paths, and the plurality of temperature sensors being disposed along at least one of a circumferential direction and a radial direction of the plurality of annular refrigerant flow paths in a plan view; a refrigerant supply unit configured to supply a refrigerant to each of the plurality of annular refrigerant flow paths and to independently control a flow rate of the refrigerant flowing through each of the plurality of annular refrigerant flow paths based on temperatures detected by the plurality of temperature sensors; A substrate processing apparatus comprising:

2. 2. The substrate processing apparatus according to claim 1, wherein the inlet / outlet structures included in each of the plurality of annular refrigerant flow paths are arranged circumferentially shifted at intervals of 360° / N (N is the number of the inlet / outlet structures).

3. The substrate processing apparatus of claim 1 , wherein the substrate support portion has an annular space disposed between two adjacent annular coolant channels among the plurality of annular coolant channels.

4. The substrate processing apparatus of claim 3 , further comprising a vacuum pump connected to the annular space.

5. The substrate processing apparatus of claim 4 , further comprising a heat transfer gas supply unit configured to supply a heat transfer gas to the annular space.

6. 2. The substrate processing apparatus of claim 1, wherein a direction of the coolant flowing through one of the plurality of annular coolant flow paths is opposite to a direction of the coolant flowing through another of the plurality of annular coolant flow paths adjacent to the one annular coolant flow path.

7. The substrate processing apparatus according to claim 1 , wherein the plurality of temperature sensors includes four or more temperature sensors arranged along the circumferential direction.

8. The substrate processing apparatus of claim 1 , wherein the plurality of temperature sensors includes two or more temperature sensors arranged along the radial direction.

9. the inlet portion of the inlet / outlet structure includes a refrigerant inlet pipe that communicates from an outside of the annular refrigerant flow path to a space on an inlet side of the annular refrigerant flow path, The substrate processing apparatus according to claim 1 , wherein the outlet portion of the inlet / outlet structure includes a coolant outlet pipe leading from a space on the outlet side of the annular coolant flow path to the outside of the annular coolant flow path.

10. The substrate processing apparatus according to claim 9 , wherein the coolant inlet pipe and the coolant outlet pipe form a double pipe.

11. The substrate processing apparatus according to claim 10 , wherein the double pipe is configured such that the coolant outlet pipe passes through the inside of the coolant inlet pipe.

12. The substrate processing apparatus according to claim 9 , wherein the coolant inlet pipe and the coolant outlet pipe are configured such that one pipe passes around the other pipe in a spiral shape.

13. The substrate processing apparatus of claim 12 , wherein the coolant outlet pipe spirals around the coolant inlet pipe.

14. The substrate processing apparatus of claim 9 , wherein the coolant inlet pipe and the coolant outlet pipe include portions that become increasingly separated from each other as they move away from the annular coolant flow path.

Images