Substrate processing apparatus and substrate processing method

Abstract

To process a substrate under substrate processing conditions corresponding to the characteristics of the substrate.SOLUTION: A substrate processing device (100) includes a substrate holding unit (120), a processing fluid supply unit (130), a component abundance measurement unit (140), and a control unit (22). The control unit (22) includes: a temporal change acquisition unit (22b) for acquiring a temporal change in abundance of a specific component on a substrate (W) on the basis of the abundance of the specific component measured by the component abundance measurement unit (140) in a specific period within a processing fluid supply period after the start of supply of a processing fluid to the substrate (W) by the processing fluid supply unit (130) and before the end thereof; a prediction line creation unit (22c) for creating a prediction line obtained by predicting the temporal change in the abundance of the specific component on the substrate (W) after the specific period in the processing fluid supply period, on the basis of the temporal change in the abundance of the specific component acquired by the temporal change acquisition unit (22b); and a processing condition modifying unit (22d) for modifying, on the basis of the prediction line, a substrate processing condition for processing the substrate before the supply of the processing fluid is stopped.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method. [Background technology]

[0002] 2. Description of the Related Art Substrate processing apparatuses are known that process substrates. Substrate processing apparatuses are suitable for processing semiconductor substrates. Typically, substrate processing apparatuses process substrates using chemical processing liquids or the like.

[0003] A method has been studied in which the amounts of components present on a substrate are measured on the spot while the substrate is being treated with a treatment liquid, and components of interest are identified while the substrate is being treated (Patent Document 1). The substrate treatment apparatus in Patent Document 1 measures the amounts of components present in the treatment liquid film by receiving reflected light of infrared rays emitted toward the substrate. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Publication No. 2020-118698 Summary of the Invention [Problem to be solved by the invention]

[0005] Typically, substrate processing conditions are set with a margin in mind to ensure uniform characteristics across multiple substrates. For example, the supply time of a processing solution is often set longer than the time required to process an average substrate, taking a margin into account. This allows for the mass production of substrates with uniform characteristics according to a predetermined recipe.

[0006] The substrate processing apparatus of Patent Document 1 can measure components contained in a processing liquid film on a substrate by reflecting infrared light emitted toward the substrate. However, when the components contained in the processing liquid film are reduced to almost zero, the substrate processing apparatus of Patent Document 1 cannot adequately detect differences in the reflected infrared light, making it difficult to accurately measure whether the components contained in the processing liquid film on the substrate have been sufficiently removed. For this reason, substrate processing conditions must be set with a margin in mind, but focusing on individual substrates may result in over-processing of the substrate.

[0007] The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a substrate processing apparatus and a substrate processing method that are capable of processing a substrate under substrate processing conditions that correspond to the characteristics of the substrate. [Means for solving the problem]

[0008] According to one aspect of the present invention, a substrate processing apparatus includes a substrate holding unit that holds a substrate, a processing liquid supply unit that supplies a processing liquid to the substrate, a component abundance measurement unit that measures the abundance of a specific component in the substrate, and a control unit that controls the substrate holding unit, the processing liquid supply unit, and the component abundance measurement unit, wherein the control unit includes: a time change acquisition unit that acquires a time change in the abundance of the specific component in the substrate based on the abundance of the specific component in the substrate measured by the component abundance measurement unit during a specific period within a processing liquid supply period after the processing liquid supply unit starts and ends supplying the processing liquid to the substrate; a prediction line creation unit that creates a prediction line that predicts a time change in the abundance of the specific component in the substrate after the specific period during the processing liquid supply period based on the time change in the abundance of the specific component acquired by the time change acquisition unit; and a processing condition change unit that changes the substrate processing conditions for processing the substrate based on the prediction line before stopping the supply of the processing liquid.

[0009] The substrate holding unit may rotatably hold the substrate. The processing liquid supply unit may supply processing liquid to the substrate while the substrate held by the substrate holding unit is rotating. The component abundance measurement unit may measure the abundance of a specific component contained in a removal target on the substrate while the processing liquid supply unit is supplying the processing liquid to the substrate. The prediction line creation unit may create a prediction line that predicts a time change in the abundance of the specific component contained in a removal target on the substrate. In one embodiment, the component abundance measurement unit measures the abundance of a specific component in the substrate using infrared light.

[0010] In one embodiment, the processing condition changing section changes substrate processing conditions for processing the substrate based on substrate processing conditions and processing results for the learning target substrate.

[0011] In one embodiment, the processing condition change unit changes the substrate processing conditions for processing the substrate based on a trained model constructed by machine learning learning data that associates substrate processing conditions and processing results for the target substrate.

[0012] In one embodiment, the processing condition changing unit changes a processing liquid supply period during which the processing liquid supply unit supplies the processing liquid, based on the time change in the abundance of the specific component acquired by the time change acquiring unit.

[0013] In one embodiment, the processing condition changing unit shortens the processing liquid supply period based on the time change in the abundance of the specific component acquired by the time change acquiring unit.

[0014] In one embodiment, the processing condition changing unit changes the flow rate, concentration, etc. of the processing liquid for processing the substrate based on the time change in the abundance of the specific component acquired by the time change acquisition unit. and temperature, a substrate rotation speed at which the substrate is rotated by the substrate holder; and , or the treatment liquid supply period during which the treatment liquid is supplied.

[0015] In one embodiment, the processing condition changing unit changes the substrate processing conditions for processing the substrate while the processing liquid supply unit continues to supply the processing liquid.

[0016] In one embodiment, the processing condition change unit changes the substrate processing conditions for processing a substrate different from the substrate for which the time change acquisition unit has acquired the amount of the specific component, based on the time change in the amount of the specific component acquired by the time change acquisition unit.

[0017] According to another aspect of the present invention, a substrate processing method includes the steps of measuring the amount of a specific component present on the substrate during a specific period within a processing liquid supply period from the start to the end of supply of processing liquid to the substrate; acquiring a time change in the amount of the specific component present on the substrate based on the amount of the specific component present on the substrate measured in the measuring step; creating a prediction line that predicts the time change in the amount of the specific component present on the substrate after the specific period during the processing liquid supply period based on the time change in the amount of the specific component present on the substrate acquired in the time change acquisition step; and changing substrate processing conditions for processing the substrate based on the prediction line before stopping the supply of processing liquid. Supply of a processing liquid to the substrate may be started while the substrate held by the substrate holder is rotating. The measuring step may measure the amount of a specific component contained in a removal target on the substrate. The acquiring step may acquire the time change in the amount of the specific component based on the measured amount of the specific component contained in the removal target on the substrate. The creating step may create the prediction line that predicts the time change in the amount of the specific component contained in the removal target on the substrate. [Effects of the Invention]

[0018] According to the present invention, a substrate can be processed under substrate processing conditions that correspond to the characteristics of the substrate. [Brief explanation of the drawings]

[0019] [Figure 1] 1 is a schematic diagram of a substrate processing system including a substrate processing apparatus according to an embodiment of the present invention; [Figure 2] 1 is a schematic diagram of a substrate processing apparatus according to an embodiment of the present invention; [Figure 3] 1 is a block diagram of a substrate processing apparatus according to an embodiment of the present invention; [Figure 4] FIG. 2 is a flow chart of a substrate processing method according to the present embodiment. [Figure 5] 1(a) to 1(d) are schematic views for explaining the substrate processing method of the present embodiment. [Figure 6] 1(a) to 1(c) are schematic views for explaining the substrate processing method of the present embodiment. [Figure 7] 1(a) to 1(d) are schematic diagrams illustrating the change over time in the amount of a specific component present and the substrate processing conditions in the substrate processing method of the present embodiment. [Figure 8] 1(a) to 1(d) are schematic diagrams illustrating the change over time in the amount of a specific component present and the substrate processing conditions in the substrate processing method of the present embodiment. [Figure 9] 10(a) to 10(d) are schematic diagrams illustrating the change over time in the amount of a specific component present and the processing liquid supply period in the substrate processing method of the present embodiment. [Figure 10] 10(a) to 10(d) are schematic diagrams illustrating the change over time in the amount of a specific component present and the processing liquid supply period in the substrate processing method of the present embodiment. [Figure 11] 1 is a block diagram of a substrate processing apparatus according to an embodiment of the present invention; [Figure 12] 1 is a schematic diagram of a substrate processing learning system including a substrate processing apparatus according to an embodiment of the present invention; [Figure 13] 1A is a schematic diagram showing a lot of multiple substrates in the substrate processing method of this embodiment, and FIG. 1B and FIG. 1C are schematic diagrams for explaining the change in abundance over time and substrate processing conditions in the substrate processing method of this embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0020] Hereinafter, embodiments of a substrate processing apparatus and a substrate processing method according to the present invention will be described with reference to the drawings. In the drawings, identical or corresponding parts are designated by the same reference numerals, and description thereof will not be repeated. In this specification, to facilitate understanding of the invention, mutually orthogonal X-, Y-, and Z-axes may be described. Typically, the X- and Y-axes are parallel to the horizontal direction, and the Z-axis is parallel to the vertical direction.

[0021] First, a substrate processing system 10 including a substrate processing apparatus 100 according to the present embodiment will be described with reference to Fig. 1. Fig. 1 is a schematic plan view of the substrate processing system 10.

[0022] 1, the substrate processing system 10 includes a plurality of substrate processing apparatuses 100. The substrate processing apparatuses 100 process substrates W. The substrate processing apparatuses 100 process the substrates W by performing at least one of etching, surface processing, property imparting, processing film formation, removal of at least a portion of a film, and cleaning on the substrates W.

[0023] The substrate W is used as a semiconductor substrate. The substrate W includes a semiconductor wafer. For example, the substrate W has a substantially circular disk shape. Here, the substrate processing apparatus 100 processes the substrates W one by one.

[0024] 1, the substrate processing system 10 includes, in addition to multiple substrate processing apparatuses 100, a fluid cabinet 10A, a fluid box 10B, multiple load ports LP, an indexer robot IR, a center robot CR, and a controller 20. The controller 20 controls the load ports LP, the indexer robot IR, the center robot CR, and the substrate processing apparatuses 100.

[0025] Each load port LP accommodates a plurality of stacked substrates W. The indexer robot IR transports substrates W between the load port LP and the center robot CR. Note that a placement stage (path) on which the substrate W is temporarily placed may be provided between the indexer robot IR and the center robot CR, and the apparatus may be configured so that the substrate W is indirectly transferred between the indexer robot IR and the center robot CR via the placement stage. The center robot CR transports substrates W between the indexer robot IR and the substrate processing apparatus 100. Each of the substrate processing apparatuses 100 processes the substrates W by discharging a liquid onto the substrates W. The liquid includes a processing liquid. Alternatively, the liquid may include other liquids. The fluid cabinet 10A contains a liquid. Note that the fluid cabinet 10A may contain a gas.

[0026] The substrate processing apparatuses 100 form a plurality of towers TW (four towers TW in FIG. 1) arranged to surround the center robot CR in a plan view. Each tower TW includes a plurality of substrate processing apparatuses 100 stacked vertically (three substrate processing apparatuses 100 in FIG. 1). Each fluid box 10B corresponds to a plurality of towers TW. Liquid in the fluid cabinet 10A is supplied to all of the substrate processing apparatuses 100 included in the tower TW corresponding to the fluid box 10B via one of the fluid boxes 10B. Gas in the fluid cabinet 10A is supplied to all of the substrate processing apparatuses 100 included in the tower TW corresponding to the fluid box 10B via one of the fluid boxes 10B.

[0027] The control device 20 controls various operations of the substrate processing system 10. The control device 20 includes a control unit 22 and a storage unit 24. The control unit 22 has a processor. The control unit 22 has, for example, a central processing unit (CPU). Alternatively, the control unit 22 may have a general-purpose computer.

[0028] The storage unit 24 includes a main storage device and an auxiliary storage device. The main storage device is, for example, a semiconductor memory. The auxiliary storage device is, for example, a semiconductor memory and / or a hard disk drive. The storage unit 24 may include removable media. The control unit 22 executes computer programs stored in the storage unit 24 to perform substrate processing operations.

[0029] The storage unit 24 also stores data. The data includes recipe data. The recipe data includes information indicating a plurality of recipes. Each of the plurality of recipes defines the processing content and processing procedure for the substrate W.

[0030] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Fig. 2. Fig. 2 is a schematic diagram of the substrate processing apparatus 100.

[0031] The substrate processing apparatus 100 includes a chamber 110, a substrate holding unit 120, a processing liquid supply unit 130, and a component abundance measurement unit 140. The chamber 110 accommodates a substrate W. The chamber 110 also accommodates the substrate holding unit 120 and at least a portion of the processing liquid supply unit 130 and the component abundance measurement unit 140.

[0032] The chamber 110 has a generally box-like shape with an internal space. The chamber 110 accommodates the substrates W. Here, the substrate processing apparatus 100 is a single-wafer type that processes the substrates W one by one, and the chamber 110 accommodates the substrates W one by one. The substrates W are accommodated in the chamber 110 and are processed in the chamber 110.

[0033] The substrate holding unit 120 holds the substrate W. The substrate holding unit 120 holds the substrate W horizontally so that the top surface (front surface) Wt of the substrate W faces upward and the back surface (bottom surface) Wr of the substrate W faces vertically downward. The substrate holding unit 120 also rotates the substrate W while holding it. The top surface Wt of the substrate W may be flattened. Alternatively, a device surface may be provided on the top surface Wt of the substrate W, or a pillar-shaped stacked structure with a recess may be provided on the top surface Wt of the substrate W. The substrate holding unit 120 rotates the substrate W while holding it.

[0034] For example, the substrate holding unit 120 may be a clamping type that clamps the edge of the substrate W. Alternatively, the substrate holding unit 120 may have any mechanism that holds the substrate W from the back surface Wr. For example, the substrate holding unit 120 may be a vacuum type. In this case, the substrate holding unit 120 holds the substrate W horizontally by adsorbing the central portion of the back surface Wr of the substrate W, which is the surface on which devices are not formed, to its upper surface. Alternatively, the substrate holding unit 120 may be a combination of a clamping type that brings multiple chuck pins into contact with the peripheral edge surface of the substrate W, and a vacuum type.

[0035] For example, the substrate holder 120 includes a spin base 121, a chuck member 122, a shaft 123, an electric motor 124, and a housing 125. The chuck member 122 is provided on the spin base 121. The chuck member 122 chucks the substrate W. Typically, the spin base 121 is provided with a plurality of chuck members 122.

[0036] The shaft 123 is a hollow shaft. The shaft 123 extends vertically along the rotation axis Ax. The spin base 121 is coupled to the upper end of the shaft 123. The substrate W is placed above the spin base 121.

[0037] The spin base 121 is disk-shaped. The chuck member 122 supports the substrate W horizontally. The shaft 123 extends downward from the center of the spin base 121. The electric motor 124 applies a rotational force to the shaft 123. The electric motor 124 rotates the shaft 123 in a rotational direction, thereby rotating the substrate W and the spin base 121 around the rotation axis Ax. The housing 125 surrounds the shaft 123 and the electric motor 124.

[0038] The processing liquid supply unit 130 supplies a processing liquid to the substrate W. Typically, the processing liquid supply unit 130 supplies the processing liquid to the upper surface Wt of the substrate W held by the substrate holding unit 120. Note that the processing liquid supply unit 130 may supply a plurality of types of processing liquid to the substrate W.

[0039] The processing liquid may be an etching liquid for etching the substrate W. Examples of the etching liquid include hydrofluoric nitric acid (a mixture of hydrofluoric acid (HF) and nitric acid (HNO3)), hydrofluoric acid, buffered hydrofluoric acid (BHF), ammonium fluoride, HFEG (a mixture of hydrofluoric acid and ethylene glycol), and phosphoric acid (H3PO4). The type of etching liquid is not particularly limited, and may be, for example, acidic or alkaline.

[0040] Alternatively, the treatment liquid may be a rinse liquid, such as deionized water (DIW), carbonated water, electrolytic ionized water, ozone water, ammonia water, diluted hydrochloric acid water (e.g., about 10 ppm to 100 ppm), and reduced water (hydrogen water).

[0041] Alternatively, the treatment liquid may be an organic solvent. Typically, the volatility of the organic solvent is higher than that of the rinse liquid. Examples of organic solvents include isopropyl alcohol (IPA), methanol, ethanol, acetone, hydrofluoroether (HFE), propylene glycol monoethyl ether (PGEE), and propylene glycol monomethyl ether acetate (PGMEA).

[0042] The processing liquid supply unit 130 includes a pipe 132, a valve 134, a nozzle 136, and a movement mechanism 138. The processing liquid is supplied to the pipe 132 from a supply source. The valve 134 opens and closes a flow path in the pipe 132. The nozzle 136 is connected to the pipe 132. The nozzle 136 ejects the processing liquid onto the upper surface Wt of the substrate W. The nozzle 136 is preferably configured to be movable relative to the substrate W.

[0043] The movement mechanism 138 moves the nozzle 136 in the horizontal and vertical directions. Specifically, the movement mechanism 138 moves the nozzle 136 in the circumferential direction around a rotation axis that extends in the vertical direction. The movement mechanism 138 also raises and lowers the nozzle 136 in the vertical direction.

[0044] The movement mechanism 138 has an arm 138a, a shaft 138b, and a drive unit 138c. The arm 138a extends horizontally. The nozzle 136 is disposed at the tip of the arm 138a. The nozzle 136 is disposed at the tip of the arm 138a in a position that allows the nozzle 136 to supply a processing liquid toward the upper surface Wt of the substrate W held by the chuck member 122. More specifically, the nozzle 136 is coupled to the tip of the arm 138a and protrudes downward from the arm 138a. The base end of the arm 138a is coupled to the shaft 138b. The shaft 138b extends vertically.

[0045] The drive unit 138c has a rotation drive mechanism and an elevation drive mechanism. The rotation drive mechanism of the drive unit 138c rotates the shaft 138b around the rotation axis, causing the arm 138a to pivot along a horizontal plane around the shaft 138b. As a result, the nozzle 136 moves along the horizontal plane. More specifically, the nozzle 136 moves in the circumferential direction around the shaft 138b. The rotation drive mechanism of the drive unit 138c includes, for example, a motor that can rotate forward and backward.

[0046] The lifting drive mechanism of the drive unit 138c raises and lowers the shaft 138b in the vertical direction. The lifting drive mechanism of the drive unit 138c raises and lowers the shaft 138b, thereby raising and lowering the nozzle 136 in the vertical direction. The lifting drive mechanism of the drive unit 138c has a drive source such as a motor and a lifting mechanism, and the drive source drives the lifting mechanism to raise or lower the shaft 138b. The lifting mechanism includes, for example, a rack and pinion mechanism or a ball screw.

[0047] The component abundance measuring unit 140 measures the abundance of a specific component on the substrate W. The specific component may be an organic substance present on the substrate W.

[0048] For example, the component abundance measurement unit 140 uses infrared light to measure the abundance of a specific component in the substrate W. The wavelength of the infrared light is 2.5 μm or more and 25 μm or less (wave number 400 cm -1 More than 4000cm -1 (See below).

[0049] For example, in organic materials, bonds such as CH, CO, CN, and CF absorb specific wavelengths of infrared light. The amount of infrared light absorbed at a specific wavelength is proportional to the amount of a component having a specific bonding group, so the amount of a specific component present in the substrate W can be measured based on the infrared light reflected from the substrate W.

[0050] The component abundance measuring unit 140 has a light emitting unit 142 and a light receiving unit 144. The light emitting unit 142 emits light toward the substrate W. The light receiving unit 144 receives the light emitted from the light emitting unit 142 that is reflected by the substrate W.

[0051] The component abundance measuring unit 140 may be movable relative to the substrate W. For example, the component abundance measuring unit 140 is preferably movable in the horizontal and / or vertical directions according to a movement mechanism controlled by the control unit 22. When the component abundance measuring unit 140 moves, the light-emitting unit 142 and the light-receiving unit 144 may be movable independently of each other. Alternatively, the light-emitting unit 142 and the light-receiving unit 144 may be movable as a unit.

[0052] The substrate processing apparatus 100 further includes a cup 180. The cup 180 collects liquid splashed from the substrate W. The cup 180 moves up and down. For example, the cup 180 moves up vertically to the side of the substrate W during the period in which the processing liquid supply unit 130 supplies liquid to the substrate W. In this case, the cup 180 collects liquid splashed from the substrate W due to the rotation of the substrate W. Furthermore, when the period in which the processing liquid supply unit 130 supplies liquid to the substrate W ends, the cup 180 moves down vertically from the side of the substrate W.

[0053] As described above, the control device 20 includes the control unit 22 and the memory unit 24. The control unit 22 controls the substrate holder 120, the processing liquid supply unit 130, the component abundance measurement unit 140, and / or the cup 180. In one example, the control unit 22 controls the electric motor 124, the valve 134, the moving mechanism 138, the light emitter 142, the light receiver 144, and / or the cup 180.

[0054] The substrate processing apparatus 100 of this embodiment is suitable for use in the manufacture of semiconductor devices having semiconductors. Typically, in semiconductor devices, conductive layers and insulating layers are stacked on a substrate. The substrate processing apparatus 100 is suitable for use in cleaning and / or processing (e.g., etching, changing characteristics, etc.) the conductive layers and / or insulating layers during the manufacture of semiconductor devices.

[0055] Next, a substrate processing apparatus 100 according to this embodiment will be described with reference to Figures 1 to 3. Figure 3 is a block diagram of the substrate processing apparatus 100.

[0056] 3 , the control device 20 controls various operations of the substrate processing apparatus 100. The control device 20 controls the indexer robot IR, the center robot CR, the substrate holding unit 120, the processing liquid supply unit 130, the component abundance measurement unit 140, and the cup 180. Specifically, the control device 20 controls the indexer robot IR, the center robot CR, the substrate holding unit 120, the processing liquid supply unit 130, the component abundance measurement unit 140, and the cup 180 by transmitting control signals to the indexer robot IR, the center robot CR, the substrate holding unit 120, the processing liquid supply unit 130, the component abundance measurement unit 140, and the cup 180.

[0057] The memory unit 24 also stores computer programs and data. The data includes recipe data. The recipe data includes information indicating a plurality of recipes. Each of the plurality of recipes specifies the processing content, processing procedure, and substrate processing conditions for the substrate W. The control unit 22 executes the computer programs stored in the memory unit 24 to perform substrate processing operations.

[0058] As described above, the storage unit 24 stores a computer program. By executing the computer program, the control unit 22 functions as a processing condition setting unit 22a, a time change acquisition unit 22b, a predicted line creation unit 22c, and a processing condition changing unit 22d. Therefore, the control unit 22 includes the processing condition setting unit 22a, the time change acquisition unit 22b, the predicted line creation unit 22c, and the processing condition changing unit 22d.

[0059] The processing condition setting unit 22a sets substrate processing conditions for processing the substrate W. For example, the processing condition setting unit 22a sets the substrate processing conditions based on recipe information stored in the storage unit 24. The substrate processing conditions include at least one of the flow rate, concentration, and temperature of a processing liquid for processing the substrate W, the substrate rotation speed at which the substrate W is rotated by the substrate holder 120, and a processing liquid supply period during which the processing liquid is supplied.

[0060] The time change acquisition unit 22b acquires the time change in the abundance of a specific component on the substrate W. The time change acquisition unit 22b acquires the time change in the abundance of a specific component from the abundance of the specific component measured by the component abundance measurement unit 140.

[0061] The prediction line creating unit 22c creates a prediction line that predicts the time change of the specific component based on the time change of the abundance of the specific component acquired by the time change acquiring unit 22b. The prediction line creating unit 22c may create a prediction line from a predetermined relational expression based on the time change of the abundance of the specific component. For example, the prediction line creating unit 22c may calculate an approximation expression that linearly interpolates the time change of the abundance of the specific component and create a prediction line using the approximation expression. Alternatively, the prediction line creating unit 22c may create a prediction line from a trained model constructed by machine learning training data that associates processing conditions and processing results (including time change of the abundance of the specific component in the training target substrate) for the training target substrate.

[0062] The processing condition changing unit 22d changes the substrate processing conditions based on the predicted line before stopping the supply of the processing liquid. Typically, the substrate processing conditions set by the processing condition setting unit 22a are defined based on a pre-estimated change in the time of a specific component of the substrate W. However, when actually processing a substrate, strictly speaking, the change in the time of the specific component of the substrate W differs depending on the characteristics of the substrate. By changing the substrate processing conditions by the processing condition changing unit 22d, the substrate W can be processed under substrate processing conditions that correspond to the characteristics of the substrate W.

[0063] The control unit 22 controls the indexer robot IR to transfer the substrate W by the indexer robot IR.

[0064] The control unit 22 controls the center robot CR to transfer the substrate W by the center robot CR. For example, the center robot CR receives an unprocessed substrate W and transports the substrate W into one of the plurality of chambers 110. The center robot CR also receives a processed substrate W from the chamber 110 and transports the substrate W out.

[0065] The control unit 22 controls the substrate holding unit 120 to start rotation of the substrate W, change the rotation speed, and stop rotation of the substrate W. For example, the control unit 22 can control the substrate holding unit 120 to change the rotation speed of the substrate holding unit 120. Specifically, the control unit 22 can change the rotation speed of the substrate W by changing the rotation speed of the electric motor 124 of the substrate holding unit 120.

[0066] The control unit 22 controls the valve 134 of the processing liquid supply unit 130 to switch the state of the valve 134 between an open state and a closed state. Specifically, the control unit 22 controls the valve 134 of the processing liquid supply unit 130 to open the valve 134, thereby allowing the processing liquid flowing through the pipe 132 toward the nozzle 136 to pass. Furthermore, the control unit 22 controls the valve 134 of the processing liquid supply unit 130 to close the valve 134, thereby stopping the supply of the processing liquid flowing through the pipe 132 toward the nozzle 136.

[0067] The control unit 22 controls the movement mechanism 138 of the processing liquid supply unit 130 to move the nozzle 136. Specifically, the control unit 22 controls the movement mechanism 138 of the processing liquid supply unit 130 to move the nozzle 136 to above the upper surface Wt of the substrate W. The control unit 22 also controls the movement mechanism 138 of the processing liquid supply unit 130 to move the nozzle 136 to a retracted position away from above the upper surface Wt of the substrate W.

[0068] The control unit 22 controls the component abundance measurement unit 140 to measure the abundance of a specific component in the substrate W. For example, the control unit 22 controls the light emitter 142 and the light receiver 144 to emit infrared light from the light emitter 142 and receive the infrared light reflected from the substrate W at the light receiver 144 to measure the intensity of the received light, thereby measuring the abundance of a specific component in the substrate W. The control unit 22 may control the component abundance measurement unit 140 to move the component abundance measurement unit 140 relative to the substrate W.

[0069] The control unit 22 may control the cup 180 to move the cup 180 relative to the substrate W. Specifically, the control unit 22 raises the cup 180 vertically upward to the side of the substrate W during the period in which the processing liquid supply unit 130 supplies the liquid to the substrate W. Furthermore, when the period in which the processing liquid supply unit 130 supplies the liquid to the substrate W ends, the control unit 22 lowers the cup 180 vertically downward from the side of the substrate W.

[0070] 3, the substrate processing apparatus 100 may further include a display unit that displays the processing status of the substrate W. For example, the display unit may display the processing result of the substrate W, or may display a predicted state of the substrate W to be processed.

[0071] The substrate processing apparatus 100 of this embodiment is preferably used for forming semiconductor elements. For example, the substrate processing apparatus 100 is preferably used for processing a substrate W used as a semiconductor element having a stacked structure. The semiconductor element is a so-called 3D structure memory (storage device). As an example, the substrate W is preferably used as a NAND flash memory.

[0072] Next, the substrate processing method of the present embodiment will be described with reference to Figures 1 to 4. Figure 4 is a flow chart of the substrate processing method.

[0073] 4, in step S102, substrate processing conditions for processing the substrate W are set. Specifically, the processing condition setting unit 22a sets the substrate processing conditions. For example, the processing condition setting unit 22a reads the substrate processing conditions from a recipe stored in the storage unit 24 and sets the substrate processing conditions.

[0074] In step S104, the supply of the processing liquid is started in accordance with the substrate processing conditions. Under the control of the control unit 22, the processing liquid supply unit 130 starts supplying the processing liquid to the substrate W. When the processing liquid supply unit 130 starts supplying the processing liquid, the control unit 22 controls the substrate holding unit 120 to rotate the substrate W while holding the substrate W. The processing liquid supply unit 130 starts supplying the processing liquid to the substrate W in accordance with the substrate processing conditions set in the processing condition setting unit 22a.

[0075] In step S106, the amount of a specific component present in the substrate W is measured. The component abundance measurement unit 140 measures the amount of a specific component present in the substrate W. Typically, the component abundance measurement unit 140 measures the amount of a specific component present in the substrate W while the processing liquid supply unit 130 is supplying the processing liquid to the substrate W.

[0076] In step S108, the time change in the abundance of the specific component on the substrate W is acquired. In particular, the time change acquisition unit 22b acquires the time change in the abundance of the specific component on the substrate W. Typically, the time change acquisition unit 22b acquires the time change in the abundance of the specific component by utilizing the results of multiple measurements of the abundance of the specific component on the substrate W by the component abundance measurement unit 140. When the specific component on the substrate W is removed by the processing liquid, the abundance of the specific component on the substrate W decreases as the processing liquid is supplied.

[0077] In step S110, a prediction line is created that predicts the time change of the specific component based on the time change of the abundance of the specific component. In detail, the prediction line creation unit 22c creates a prediction line that predicts the time change of the specific component based on the time change of the abundance of the specific component.

[0078] For example, the prediction line creating unit 22c may create a prediction line from a predetermined relational expression based on the change over time in the abundance of a specific component. Alternatively, the prediction line creating unit 22c may input the change over time in the abundance of a specific component to the learned model LM, and obtain a prediction result of the change over time of the specific component from the learned model LM to create a prediction line.

[0079] In step S112, the substrate processing conditions are changed. Specifically, the processing condition change unit 22d changes the substrate processing conditions based on the predicted line.

[0080] Typically, the processing condition changing unit 22d changes the substrate processing conditions set in step S102 for the currently processed substrate W. However, the processing condition changing unit 22d may change the processing conditions for a substrate W to be processed in the future, instead of the processing conditions for the currently processed substrate W.

[0081] In step S114, the supply of the processing liquid to the substrate W is stopped. For example, the control unit 22 continues processing the substrate W in accordance with the changed substrate processing conditions, and then ends processing of the substrate W in accordance with the substrate processing conditions. In one example, under the control of the control unit 22, the processing liquid supply unit 130 stops supplying the processing liquid to the substrate W. Thereafter, under the control of the control unit 22, the substrate holding unit 120 stops rotating the substrate W. In this manner, the processing of the substrate W is ended.

[0082] In this embodiment, the substrate W is processed under substrate processing conditions that are changed in accordance with the characteristics of the substrate W. Therefore, it is possible to prevent the substrate processing conditions from being excessive or insufficient in accordance with the characteristics of the substrate W.

[0083] Next, the substrate processing method of this embodiment will be described with reference to Figures 1 to 6. Figures 5(a) to 6(c) are schematic diagrams showing the substrate processing method of this embodiment.

[0084] As shown in Fig. 5(a), a removal target R exists on a structure S of a substrate W. Before starting processing of the substrate W, substrate processing conditions are set. In detail, the processing condition setting unit 22a sets substrate processing conditions for processing the substrate W. For example, the processing condition setting unit 22a reads out recipe information stored in the memory unit 24, and sets substrate processing conditions in accordance with the recipe information.

[0085] 5(b), the abundance of a specific component contained in the removal target R on the substrate W is measured. The component abundance measurement unit 140 measures the abundance of a specific component in the removal target R. Here, the measurement of the abundance of a specific component by the component abundance measurement unit 140 is referred to as measurement M.

[0086] When the specific component is uniformly present in the removal target object, the abundance of the specific component serves as an index of the abundance of the removal target object R. For example, the abundance of the specific component serves as an index of the thickness (height) of the removal target object R.

[0087] As shown in FIG. 5(c), the supply of the processing liquid to the substrate W is started. Here, substrate processing condition A is set as the substrate processing condition. The processing liquid supply unit 130 supplies the processing liquid to the substrate W in accordance with the substrate processing condition A. For example, when the processing liquid is supplied to the substrate W, the object to be removed R is gradually dissolved by the processing liquid. In this case, the thickness of the object to be removed R gradually decreases. Here, the supply of the processing liquid by the processing liquid supply unit 130 is indicated as supply L.

[0088] 5(d), the amount of a specific component present in the removal target R on the substrate W is measured while the processing liquid is being supplied to the substrate W. In detail, while the processing liquid supply unit 130 is supplying L the processing liquid to the substrate W in accordance with the set substrate processing conditions A, the component amount measurement unit 140 measures M the amount of a specific component present in the substrate W.

[0089] The component abundance measurement unit 140 measures the abundance of a specific component. The component abundance measurement unit 140 may measure the abundance of a specific component at predetermined time intervals. Alternatively, the component abundance measurement unit 140 may continuously measure the abundance of a specific component.

[0090] As shown in Fig. 6(a), the time change acquisition unit 22b acquires the time change in the abundance of a specific component based on the measurement result of the component abundance measurement unit 140. Fig. 6(a) shows a measured line Lr that represents the time change in the abundance of a specific component acquired by the time change acquisition unit 22b.

[0091] The prediction line creating unit 22c predicts the time change of the specific component based on the time change of the abundance of the specific component acquired by the time change acquiring unit 22b. The prediction line creating unit 22c creates a prediction line Lp that predicts the time change of the specific component based on the time change of the abundance of the specific component. The prediction line Lp shows the time change of the specific component when it is assumed that processing of the substrate W continues under the substrate processing condition A. FIG. 6(a) shows the prediction line Lp that represents the time change of the specific component created by the prediction line creating unit 22c. Here, the prediction line Lp extends collinearly with the actual measurement line Lr.

[0092] The processing condition changing unit 22d changes the substrate processing condition based on the predicted line Lp. Specifically, the processing condition changing unit 22d changes the substrate processing condition from substrate processing condition A to substrate processing condition B based on the predicted line Lp.

[0093] The processing condition changing unit 22d changes the substrate processing conditions based on the time rate of change of the specific component indicated by the predicted line Lp. For example, the processing condition changing unit 22d changes the substrate processing conditions based on the magnitude of the slope of the predicted line Lp. Alternatively, the processing condition changing unit 22d changes the substrate processing conditions based on the time at which the specific component indicated by the predicted line Lp becomes zero.

[0094] For example, if the change over time of the specific component indicated by the prediction line Lp is faster than the change over time assumed before processing the substrate W (i.e., if the rate of change of the prediction line Lp is relatively large), the processing condition modification unit 22d modifies the substrate processing conditions to slow down the change over time of the specific component of the substrate W. Alternatively, if the time at which the specific component indicated by the prediction line Lp becomes zero is shorter than the estimated processing end time for the substrate W, the processing condition modification unit 22d modifies the substrate processing conditions to shorten the processing liquid supply period.

[0095] Alternatively, if the change over time of the specific component indicated by the prediction line Lp is slower than the change over time estimated before processing the substrate W (i.e., if the rate of change of the prediction line Lp is relatively small), the processing condition modification unit 22d modifies the substrate processing conditions to speed up the change over time of the specific component of the substrate W. Alternatively, if the time it takes for the specific component indicated by the prediction line Lp to become zero is longer than the estimated processing end time of the substrate W, the processing condition modification unit 22d modifies the substrate processing conditions to lengthen the processing liquid supply period.

[0096] Typically, the process condition changing unit 22d changes a parameter of at least one item of the substrate process conditions. For example, the process condition changing unit 22d changes the process liquid supply period based on the time change in the amount of a specific component. In one example, the process condition changing unit 22d shortens the process liquid supply period based on the time change in the amount of a specific component.

[0097] 6(b), the processing of the substrate W continues in accordance with the changed substrate processing condition B. In detail, the control unit 22 continues the processing of the substrate W by supplying the processing liquid to the substrate W. Here, the substrate processing condition B is set as the substrate processing condition, and the processing liquid supply unit 130 supplies the processing liquid to the substrate W in accordance with the substrate processing condition B. In one example, the processing liquid supply unit 130 continues to supply the processing liquid until the end of the processing liquid supply period that has been shortened by the change of the substrate processing condition.

[0098] 6(c), the processing of the substrate W is completed. By processing the substrate W, the object to be removed R is removed from above the structure S, and the structure S can be exposed.

[0099] According to this embodiment, a prediction line Lp that predicts the time change of a specific component is obtained from the measurement results of the substrate W measured during processing of the substrate W, and the substrate processing conditions are changed based on the obtained prediction line Lp. Because the prediction line Lp is based on the characteristics unique to the substrate W being processed, the substrate W can be processed under substrate processing conditions that take into account the characteristics unique to the substrate W.

[0100] 6A, the predicted line Lp extends in the same straight line as the measured line Lr, but this embodiment is not limited to this. The predicted line Lp may be created in a manner different from the measured line Lr.

[0101] 5 and 6, the removal target R on the structures S is removed by the processing liquid, but this embodiment is not limited to this. The removal target R between the structures S may also be removed by the processing liquid. For example, the removal target R located between the structures S after dry etching may be removed by the processing liquid.

[0102] Next, the substrate processing method of this embodiment will be described with reference to Figures 1 to 8. Figures 7(a) to 8(d) are graphs showing the change over time in the amount of a specific component present in a substrate W in the substrate processing method of this embodiment. The horizontal axis of the graph represents time, and the vertical axis of the graph represents the amount of the specific component present.

[0103] 7(a), before the substrate W is treated with the treatment liquid, substrate treatment conditions A for the substrate W are set. In detail, the treatment condition setting unit 22a sets the substrate treatment conditions A for treating the substrate W.

[0104] As shown in FIG. 7(b), the supply of processing liquid to the substrate W is started, and processing of the substrate W begins according to substrate processing condition A. After the supply of processing liquid is started, the amount of a specific component present in the substrate W is measured. When a time ta has elapsed since the processing liquid was supplied to the substrate W, the amount of the specific component present is the amount ma. Here, the arrow T indicates the time of interest.

[0105] As shown in FIG. 7(c), the supply of the processing liquid to the substrate W continues, and the processing of the substrate W continues according to the substrate processing conditions A. While the supply of the processing liquid to the substrate W continues, the amount of the specific component present is measured. When a time tb (>ta) has elapsed since the processing liquid was supplied to the substrate W, the amount of the specific component present is the amount mb ( <ma)である。

[0106] As shown in FIG. 7(d), the supply of the processing liquid to the substrate W is continued. While the supply of the processing liquid to the substrate W is continued, the amount of the specific component present is measured. When a time tc (>tb) has elapsed since the processing liquid was supplied to the substrate W, the amount of the specific component present is mc ( <mb)である。

[0107] 8(a), the time change acquisition unit 22b acquires the time change in the abundance of a specific component based on the measurement results of the component abundance measurement unit 140. The time change acquisition unit 22b acquires the time change in the abundance of a specific component from the abundance ma of the specific component at time ta, the abundance mb of the specific component at time tb, and the abundance mc of the specific component at time tc. In this way, the time change acquisition unit 22b acquires the time change in the abundance of a specific component based on the abundance of the specific component of the substrate W measured by the component abundance measurement unit 140 during a specific period within the processing liquid supply period from when the processing liquid supply unit 130 starts to supply the processing liquid to the substrate W until it ends.

[0108] The time change acquisition unit 22b may create a measured line Lr that indicates the time change in the abundance of a specific component. The measured line Lr may be displayed on a display unit. Fig. 6(a) shows the measured line Lr that indicates the time change in the abundance of a specific component acquired by the time change acquisition unit 22b.

[0109] Based on the time change in the abundance of the specific component, a prediction line Lp is created that predicts the time change in the abundance of the specific component. More specifically, the prediction line creation unit 22c creates the prediction line Lp based on the time change in the abundance of the specific component. Based on the time change in the abundance of the specific component acquired by the time change acquisition unit 22b, the prediction line creation unit 22c creates a prediction line that predicts the time change in the abundance of the specific component on the substrate W after a specific period during the processing liquid supply period.

[0110] The predicted line Lp may be generated based on the measured line Lr. Typically, the predicted line Lp is generated by extending the measured line Lr. The predicted line Lp may be displayed on the display unit together with the measured line Lr or separately from the measured line Lr.

[0111] 8(b), processing condition changing unit 22d changes the substrate processing conditions based on a prediction line Lp that predicts a time change of the specific component. Specifically, processing condition changing unit 22d changes substrate processing conditions A to substrate processing conditions B based on the prediction line Lp. For example, processing condition changing unit 22d changes substrate processing conditions A to substrate processing conditions B by changing at least one setting value of a plurality of items set as substrate processing conditions A.

[0112] 8(c), the processing of the substrate W continues in accordance with the changed substrate processing condition B. The processing of the substrate W continues by supplying the processing liquid to the substrate W. Here, the substrate processing condition B is set as the substrate processing condition, and the processing liquid supply unit 130 supplies the processing liquid to the substrate W in accordance with the substrate processing condition B. In one example, the processing liquid supply unit 130 continues to supply the processing liquid until the end of the processing liquid supply period that has been shortened by the change in the substrate processing condition.

[0113] 8(c), as the substrate processing conditions are changed to substrate processing conditions B, the time change of the specific component may be changed to be different from the predicted line Lp. For example, as a result of the change in the substrate processing conditions, the time change of the specific component may proceed faster than the time change of the predicted line Lp. In one example, by increasing the flow rate, concentration, or temperature of the processing liquid or by reducing the substrate rotation speed, the time change of the specific component can be changed to be larger than the time change of the predicted line Lp.

[0114] Alternatively, the time change of the specific component may proceed more slowly than the time change of the predicted line Lp by changing the substrate processing conditions. For example, by decreasing the flow rate, concentration, or temperature of the processing liquid or increasing the substrate rotation speed, the time change of the specific component can be changed to be less than the time change of the predicted line Lp.

[0115] 8(d), the time variation of the specific component may not be changed when substrate processing condition A is changed to substrate processing condition B, and the time variation of the specific component may change along the prediction line Lp. In this case, it is preferable to process the substrate W under the changed substrate processing conditions until the amount of the specific component becomes zero. For example, the substrate processing time may be changed to match the time when the amount of the specific component becomes zero on the prediction line Lp.

[0116] In this embodiment, the substrate W is processed under substrate processing conditions that are changed based on the change over time in the amount of a specific component present in the processed substrate W. This allows the substrate W to be processed under substrate processing conditions that are suited to the characteristics of the substrate W.

[0117] 7 and 8, the abundance of the specific component decreases over time, but this embodiment is not limited to this. The abundance of the specific component may also increase over time.

[0118] In this embodiment, the substrate processing conditions for the substrate W are changed based on the time change in the amount of a specific component present in the processed substrate W. When the substrate processing conditions are changed, it is preferable to change the substrate processing time as one of the substrate processing conditions.

[0119] Next, the substrate processing method of this embodiment will be described with reference to Figures 1 to 10. Figures 9(a) to 10(d) are graphs showing the change over time in the amount of the component on the substrate W in the substrate processing method of this embodiment. The horizontal axis of the graph represents time, and the vertical axis of the graph represents the amount of the component.

[0120] 9(a), before starting the supply of the processing liquid to the substrate W, a processing liquid supply period Pa is set for supplying the processing liquid to the substrate W. In detail, the processing condition setting unit 22a sets the processing liquid supply period to the processing liquid supply period Pa when setting the substrate processing conditions.

[0121] 9(b), the supply of the processing liquid to the substrate W is started. After the supply of the processing liquid to the substrate W is started, the amount of the specific component present is measured. When a time ta has elapsed since the processing liquid was supplied to the substrate W, the amount of the specific component present is the amount ma.

[0122] At this time, the processing liquid is set to be supplied for a processing liquid supply period Pa. Here, a time ta has elapsed since the supply of the processing liquid started, and thereafter, the processing liquid is set to be continuously supplied for a period ta1 (=Pa-ta).

[0123] As shown in FIG. 9(c), the supply of the processing liquid to the substrate W is continued. While the supply of the processing liquid to the substrate W is continued, the amount of the specific component present is measured. When a time tb (>ta) has elapsed since the processing liquid was supplied to the substrate W, the amount of the specific component present is the amount mb ( <ma)である。

[0124] Here, too, the treatment liquid is set to be supplied for a treatment liquid supply period Pa. At this time, a time tb has elapsed since the start of the supply of the treatment liquid, and thereafter, the treatment liquid is set to be continuously supplied for a period tb1 (=Pa-tb).

[0125] As shown in FIG. 9(d), the supply of the processing liquid to the substrate W is continued. While the supply of the processing liquid to the substrate W is continued, the amount of the specific component present is measured. When a time tc (>tb) has elapsed since the processing liquid was supplied to the substrate W, the amount of the specific component present is mc ( <mb)である。

[0126] Here, too, the treatment liquid is set to be supplied for a treatment liquid supply period Pa. At this time, a time tc has elapsed since the start of the supply of the treatment liquid, and thereafter, the treatment liquid is set to be continuously supplied for a period tc1 (=Pa-tc).

[0127] 10(a), the time change acquisition unit 22b acquires the time change in the abundance of a specific component based on the measurement results of the component abundance measurement unit 140. The time change acquisition unit 22b acquires the time change in the abundance of a specific component from the abundance ma of the specific component at time ta, the abundance mb of the specific component at time tb, and the abundance mc of the specific component at time tc.

[0128] Furthermore, a prediction line Lp that predicts the time change of the specific component is created based on the time change of the abundance of the specific component. More specifically, the prediction line creating unit 22c creates the prediction line Lp based on the time change of the abundance of the specific component. The prediction line Lp may be created based on the actual measurement line Lr.

[0129] 10(b), the processing condition changing unit 22d changes the processing liquid supply period based on a prediction line Lp that predicts the time change of the specific component. Specifically, the processing condition changing unit 22d changes the processing liquid supply period Pa to a processing liquid supply period Pb based on the prediction line Lp.

[0130] Therefore, the processing liquid is set to be supplied for a processing liquid supply period Pb. At this time, a time tc has elapsed since the supply of the processing liquid started, and the processing liquid is set to be continuously supplied for a time tc2 (=Pb-tc).

[0131] As shown in Figure 10(c), the processing of the substrate W continues in accordance with the changed processing liquid supply period Pb. The processing of the substrate W continues by supplying the processing liquid to the substrate W. Here, the processing liquid supply period Pb is set as the substrate processing condition. The processing liquid supply unit 130 supplies the processing liquid to the substrate W in accordance with the processing liquid supply period Pb. In one example, the processing liquid supply unit 130 continues to supply the processing liquid until the end of the processing liquid supply period that has been shortened by changing the substrate processing condition.

[0132] 10(d), the substrate processing conditions may be changed based on the predicted line Lp so as not to change the processing liquid supply period Pa. For example, processing may be performed under substrate processing condition A from the start of supply of the processing liquid until time tc has elapsed, and then processing may be performed under substrate processing condition B after time tc has elapsed, thereby adjusting the processing liquid supply period to the processing liquid supply period Pa.

[0133] Next, a substrate processing apparatus 100 according to this embodiment will be described with reference to Figures 1 to 11. Figure 11 is a block diagram of the substrate processing apparatus 100 according to this embodiment. The substrate processing apparatus 100 in Figure 11 has the same configuration as the substrate processing apparatus 100 described above with reference to Figure 3, except that the storage unit 24 stores a trained model LM, and therefore, redundant description will be omitted to avoid redundancy.

[0134] 11, in the substrate processing apparatus 100 of this embodiment, the memory unit 24 stores a learned model LM. The learned model LM is constructed by machine learning learning data that associates processing conditions and processing results for a target substrate. The control unit 22 changes the substrate processing conditions using the learned model LM stored in the memory unit 24.

[0135] When input information indicating the time change in the abundance of a specific component acquired by the time change acquisition unit 22b is input to the learned model LM, the learned model LM outputs output information indicating a prediction line predicting the time change of the specific component.

[0136] The processing condition modification unit 22d modifies the substrate processing conditions based on output information obtained by inputting, into the learned model LM, input information indicating the time change in the abundance of a specific component acquired by the time change acquisition unit 22b. For example, the processing condition modification unit 22d inputs, into the learned model LM, input information indicating the time change in the abundance of a specific component in the substrate W, and modifies the supply time of the processing liquid supplied to the substrate W based on output information indicating a prediction line obtained from the learned model LM. In one example, the processing condition modification unit 22d shortens the supply time of the processing liquid under the substrate processing conditions set by the processing condition setting unit 22a based on the output information.

[0137] Based on the prediction line, processing condition changing unit 22d changes substrate processing condition A to substrate processing condition B. For example, processing condition changing unit 22d changes substrate processing condition A to substrate processing condition B by changing at least one setting value of a plurality of items set as substrate processing condition A.

[0138] In the above description, the processing condition change unit 22d changed the substrate processing conditions for the substrate W based on output information indicating the predicted line obtained by the predicted line creation unit 22c from the learned model LM, but the processing condition change unit 22d may also input the output information obtained from the learned model LM into another learned model LM and obtain substrate processing condition change information from this learned model LM.

[0139] 11, the memory unit 24 stores the learned model LM, but this embodiment is not limited to this. The memory unit 24 may not store the learned model LM, and a server capable of communicating with the substrate processing apparatus 100 may store the learned model LM. The processing condition change unit 22d may change the substrate processing conditions based on output information from the learned model LM stored in the server.

[0140] 11, the substrate processing conditions are changed based on the output information output from the learned model LM. For example, the learned model LM may output substrate processing condition change information indicating the substrate processing conditions to be changed as output information.

[0141] Next, a substrate processing learning system 200 for explaining generation of a learned model LM and input information and output information for the learned model LM will be described with reference to Fig. 12. Fig. 12 is a schematic diagram of the substrate processing learning system 200.

[0142] 12, the substrate processing learning system 200 includes a substrate processing apparatus 100, a substrate processing apparatus 100L, a learning data generation device 300, and a learning device 400. The learning data generation device 300 and / or the learning device 400 may be separate from the substrate processing apparatus 100 and / or the substrate processing apparatus 100L. Alternatively, the learning data generation device 300 and / or the learning device 400 may be implemented in the substrate processing apparatus 100 and / or the substrate processing apparatus 100L.

[0143] The substrate processing apparatus 100 processes a substrate to be processed. Here, the substrate to be processed has a pattern of structures formed thereon, and the substrate processing apparatus 100 processes the substrate to be processed with a processing liquid. Note that the substrate processing apparatus 100 may perform a process other than supplying the processing liquid to the substrate to be processed. Typically, the substrate to be processed is approximately disk-shaped.

[0144] The substrate processing apparatus 100L processes a learning target substrate. Here, the learning target substrate has a structural pattern formed thereon, and the substrate processing apparatus 100L processes the learning target substrate with a processing liquid. Note that the substrate processing apparatus 100L may perform processing on the learning target substrate other than supplying the processing liquid. The configuration of the learning target substrate is the same as the configuration of the processing target substrate. Typically, the learning target substrate is approximately disk-shaped. The configuration of the substrate processing apparatus 100L is the same as the configuration of the substrate processing apparatus 100. The substrate processing apparatus 100L may be the same as the substrate processing apparatus 100. For example, the same substrate processing apparatus may have previously processed a learning target substrate and then process the processing target substrate. Alternatively, the substrate processing apparatus 100L may be a different product having the same configuration as the substrate processing apparatus 100.

[0145] In the following description of this specification, the learning target substrate may be referred to as the "learning target substrate WL," and the processing target substrate may be referred to as the "processing target substrate Wp." Furthermore, when it is not necessary to distinguish between the learning target substrate WL and the processing target substrate Wp, the learning target substrate WL and the processing target substrate Wp may be referred to as the "substrate W."

[0146] The substrate processing apparatus 100L outputs time series data TDL. The time series data TDL is data indicating changes in physical quantities over time in the substrate processing apparatus 100L. The time series data TDL indicates changes in physical quantities (values) over time that change in a time series over a predetermined period of time. For example, the time series data TDL is data indicating changes in physical quantities over time regarding the processing performed on the learning target substrate by the substrate processing apparatus 100L. Alternatively, the time series data TDL is data indicating changes in physical quantities over time regarding the characteristics of the learning target substrate processed by the substrate processing apparatus 100L. Alternatively, the time series data TDL may include data indicating a manufacturing process before the learning target substrate is processed in the substrate processing apparatus 100L.

[0147] The values ​​shown in the time-series data TDL may be values ​​directly measured by a measuring device, or may be values ​​obtained by calculating values ​​directly measured by a measuring device, or may be values ​​obtained by calculating values ​​measured by multiple measuring devices.

[0148] The learning data generation device 300 generates learning data LD based on the time series data TDL or at least a part of the time series data TDL. The learning data generation device 300 outputs the learning data LD.

[0149] The learning data LD includes substrate processing condition information and processing result information for the learning target substrate WL. In the learning data LD, the substrate processing condition information and processing result information of the time-series data TDL are associated with each other.

[0150] The substrate processing condition information for the learning target substrate WL indicates the substrate processing conditions applied to the learning target substrate WL, including at least one of the flow rate, concentration, and temperature of the processing liquid used to process the learning target substrate WL, the substrate rotation speed at which the learning target substrate WL rotates, and the processing liquid supply period for supplying the processing liquid.

[0151] The processing result information for the learning target substrate WL indicates the results of the substrate processing performed on the learning target substrate WL. The processing result information includes time change information obtained by measuring the time change in the amount of a specific component present on the learning target substrate WL in accordance with the substrate processing conditions. The time change information for the learning target substrate WL indicates the time change in the amount of a specific component present on the learning target substrate WL. Typically, the time change information for the learning target substrate WL is preferably a result measured over a period of time that indicates that the amount of a specific component present on the learning target substrate WL has sufficiently shifted to a constant value. For example, the time change information for the learning target substrate WL is preferably a result measured over a period of time that indicates that the specific component on the learning target substrate WL has been sufficiently removed. The processing result information may also include an evaluation result for the learning target substrate WL.

[0152] The learning device 400 generates a trained model LM by performing machine learning on the training data LD. The learning device 400 outputs the trained model LM.

[0153] The learning device 400 stores a learning program. The learning program is a program for executing a machine learning algorithm to find certain rules from a plurality of pieces of learning data LD and generate a learned model LM that expresses the found rules. By executing the learning program, the learning device 400 performs machine learning on the learning data LD to adjust the parameters of the inference program and generate the learned model LM.

[0154] For example, the machine learning algorithm is a supervised learning algorithm. In one example, the machine learning algorithm is a decision tree, a nearest neighbor method, a naive Bayes classifier, a support vector machine, or a neural network. Therefore, the trained model LM includes a decision tree, a nearest neighbor method, a naive Bayes classifier, a support vector machine, or a neural network. In the machine learning for generating the trained model LM, backpropagation may be used.

[0155] For example, a neural network includes an input layer, one or more hidden layers, and an output layer. Specifically, the neural network is a deep neural network (DNN), a recurrent neural network (RNN), or a convolutional neural network (CNN), and performs deep learning. For example, a deep neural network includes an input layer, multiple hidden layers, and an output layer.

[0156] The substrate processing apparatus 100 outputs time series data TD. The time series data TD is data indicating changes over time in physical quantities in the substrate processing apparatus 100. The time series data TD indicates changes over time in physical quantities (values) that change over time over a predetermined period of time. For example, the time series data TD is data indicating changes over time in physical quantities regarding the processing performed by the substrate processing apparatus 100 on the substrate to be processed. Alternatively, the time series data TD is data indicating changes over time in physical quantities regarding the characteristics of the substrate to be processed that has been processed by the substrate processing apparatus 100.

[0157] The values ​​indicated in the time series data TD may be values ​​directly measured by a measuring device. Alternatively, the values ​​indicated in the time series data TD may be values ​​obtained by calculating values ​​directly measured by a measuring device. Alternatively, the values ​​indicated in the time series data TD may be values ​​obtained by calculating values ​​measured by a plurality of measuring devices. Alternatively, the time series data TD may include data indicating a manufacturing process before the target substrate is processed in the substrate processing apparatus 100.

[0158] The object used by the substrate processing apparatus 100 corresponds to the object used by the substrate processing apparatus 100L. Therefore, the configuration of the object used by the substrate processing apparatus 100 is the same as the configuration of the object used by the substrate processing apparatus 100L. Furthermore, in the time-series data TD, the physical quantity of the object used by the substrate processing apparatus 100 corresponds to the physical quantity of the object used by the substrate processing apparatus 100L. Therefore, the physical quantity of the object used by the substrate processing apparatus 100L is the same as the physical quantity of the object used by the substrate processing apparatus 100.

[0159] Input information De for the substrate Wp to be processed is generated from the time-series data TD. The input information De for the substrate Wp to be processed includes substrate processing condition information and time change information for the substrate Wp to be processed. The substrate processing condition information for the substrate Wp to be processed indicates the substrate processing conditions applied to the substrate Wp to be processed for which processing has begun. The time change information indicates the time change in the amount of a specific component present on the substrate Wp to be processed, obtained from the substrate Wp to be processed for which processing has begun. If the substrate processing conditions for the substrate Wp to be processed are fixed, the input information De may include the time change information without including the substrate processing condition information for the substrate Wp to be processed.

[0160] When input information De for the substrate Wp to be processed is input to the learned model LM, predicted line information Cp indicating substrate processing conditions suitable for processing the substrate Wp to be processed is output from the learned model LM. The predicted line information Cp indicates the substrate processing conditions to be changed. The predicted line information Cp is used in the substrate processing apparatus 100 that processes the substrate Wp to be processed.

[0161] Specifically, the processing condition change unit 22d inputs the substrate processing condition A and input information indicating the time change in the abundance of the specific component acquired by the time change acquisition unit 22b to the learned model LM, and acquires the predicted curve information Cp output from the learned model LM. The processing condition change unit 22d changes the processing liquid supply conditions based on the predicted curve information Cp.

[0162] For example, the processing condition changing unit 22d changes the processing liquid supply period based on the predicted line information Cp. In one example, the processing condition changing unit 22d changes the setting value of the processing liquid supply period item from processing liquid supply period Pa to processing liquid supply period Pb while maintaining the setting values ​​of the items other than the processing liquid supply period.

[0163] As described with reference to FIG. 12, the learning device 400 performs machine learning. Therefore, a highly accurate trained model LM can be generated from time-series data TDL, which is very complex and has a huge number of analysis targets. Furthermore, when input information De from the time-series data TD of the processing target substrate Wp is input to the training model LM, the training model LM outputs predicted line information Cp that indicates the time change of the specific component. The processing condition change unit 22d changes the substrate processing conditions for the processing target substrate Wp based on the predicted line information Cp. In this way, the processing target substrate Wp can be processed under substrate processing conditions that correspond to the characteristics of the processing target substrate Wp.

[0164] 1 to 12, the substrate processing apparatus 100 mainly changes the substrate processing conditions for the substrate W currently being processed, but this embodiment is not limited to this. The substrate processing apparatus 100 may also change the substrate processing conditions for the substrate W to be processed in the future.

[0165] Next, the substrate processing method of this embodiment will be described with reference to Figures 1 to 13. Figure 13(a) is a schematic diagram showing a plurality of substrates W from the same lot in the substrate processing method of this embodiment, and Figures 13(b) and 13(c) are graphs showing the change in the amount of the metal particles on the substrates W over time in the substrate processing method of this embodiment.

[0166] 13(a), one substrate W is taken out from a plurality of substrates included in the same lot and processed. Here, a substrate Wa is taken out from a plurality of substrates W of the same lot accommodated in a load port LP. Typically, substrates W in the same lot exhibit similar characteristics.

[0167] 13(b), substrate processing conditions are set for a plurality of substrates W. In detail, the processing condition setting unit 22a sets the substrate processing conditions for a plurality of substrates W. Here, the processing condition setting unit 22a sets the substrate processing conditions A for each of the substrates Wa to Wc when the substrate Wb is processed after the substrate Wa and the substrate Wc is processed after the substrate Wb.

[0168] 13(c), the supply of the processing liquid is started in accordance with the substrate processing condition A. The processing liquid supply unit 130 starts supplying the processing liquid to the substrate Wa under the control of the control unit 22. The processing liquid supply unit 130 starts supplying the processing liquid to the substrate Wa in accordance with the substrate processing condition A set in the processing condition setting unit 22a.

[0169] The substrate processing apparatus 100 measures the abundance of a specific component in the substrate Wa while processing the substrate Wa. Specifically, the component abundance measurement unit 140 measures the abundance of the specific component in the substrate Wa. Typically, the component abundance measurement unit 140 measures the abundance of the specific component in the substrate Wa while the processing liquid supply unit 130 is supplying the processing liquid to the substrate Wa.

[0170] The substrate processing apparatus 100 acquires the time change in the abundance of a specific component on the substrate Wa. Specifically, the time change acquisition unit 22b acquires the time change in the abundance of a specific component on the substrate Wa. Typically, the component abundance measurement unit 140 measures the abundance of the specific component on the substrate Wa multiple times, and the time change acquisition unit 22b acquires the time change in the abundance of the specific component on the substrate Wa using the results.

[0171] Thereafter, a prediction line that predicts the time change of the specific component based on the time change of the abundance of the specific component is created. In particular, the prediction line creation unit 22c creates a prediction line that predicts the time change of the specific component based on the time change of the abundance of the specific component. For example, the prediction line creation unit 22c may create the prediction line by creating an approximation formula that linearly interpolates the time change of the abundance of the specific component. Alternatively, the prediction line creation unit 22c may create the prediction line from a trained model.

[0172] Thereafter, the substrate processing conditions are changed based on the predicted line obtained for the substrate Wa. More specifically, the processing condition changing unit 22d changes the substrate processing conditions for the substrates Wb and We to be processed later based on the predicted line for the substrate Wa. In this manner, the processing condition changing unit 22d changes the substrate processing conditions A previously set for the substrates Wb and We to the substrate processing conditions B.

[0173] The processing condition changing unit 22d may change the substrate processing conditions for the substrate Wa during processing of the substrate Wa. In this case, the changed substrate processing conditions for the substrate Wa may be different from the substrate processing conditions for the substrates Wb and Wec that are processed later.

[0174] The processing condition changing unit 22d may change the substrate processing conditions for the substrate Wb before starting to supply the processing liquid to the substrate Wb. The processing condition changing unit 22d may change the substrate processing conditions for the substrate Wb before completing to supply the processing liquid to the substrate Wb.

[0175] Similarly, the processing condition changing unit 22d may change the substrate processing conditions for the substrate Wec before starting to supply the processing liquid to the substrate Wec, or before completing to supply the processing liquid to the substrate Wec.

[0176] Substrates W included in the same lot exhibit similar characteristics. Therefore, the processing condition changing unit 22d may change the substrate processing conditions for a substrate W to be processed later, rather than the substrate processing conditions for a substrate W currently being processed. This allows the substrate W to be processed under substrate processing conditions that are suited to the characteristics of the substrate W.

[0177] The embodiments of the present invention have been described above with reference to the drawings. However, the present invention is not limited to the above embodiments and can be embodied in various forms without departing from the spirit and scope of the present invention. Furthermore, various inventions can be formed by appropriately combining multiple components disclosed in the above embodiments. For example, some components may be omitted from all components shown in the embodiments. Furthermore, components from different embodiments may be appropriately combined. The drawings mainly show each component in a schematic manner to facilitate understanding. The thickness, length, number, spacing, etc. of each component shown may differ from the actual thickness, length, number, spacing, etc. of each component shown in the above embodiments due to the convenience of drawing. Furthermore, the materials, shapes, dimensions, etc. of each component shown in the above embodiments are merely examples and are not particularly limited. Various modifications are possible within a scope that does not substantially deviate from the effects of the present invention. [Industrial Applicability]

[0178] The present invention is suitably used in a substrate processing apparatus and a substrate processing method. [Explanation of symbols]

[0179] 100 Substrate processing apparatus 110 Chamber 120 Board holding part 130 Processing liquid supply unit 140 Component abundance measurement section W substrate

Claims

1. a substrate holder that rotatably holds the substrate; a processing liquid supply unit that supplies a processing liquid to the substrate while the substrate held by the substrate holder is rotating; a component abundance measurement unit that measures the abundance of a specific component contained in the removal target on the substrate while the processing liquid supply unit is supplying the processing liquid to the substrate; a control unit that controls the substrate holding unit, the processing liquid supply unit, and the component abundance measuring unit; A substrate processing apparatus comprising: The control unit a time change acquisition unit that acquires a time change in the abundance of the specific component based on the abundance of the specific component measured by the component abundance measurement unit during a specific period within a processing liquid supply period from when the processing liquid supply unit starts to supply the processing liquid to the substrate until when the processing liquid supply unit stops supplying the processing liquid; a prediction line creation unit that creates a prediction line that predicts the time change in the abundance of the specific component contained in the removal target on the substrate after the specific period during the processing liquid supply period, based on the time change in the abundance of the specific component acquired by the time change acquisition unit; and a processing condition changing unit that changes substrate processing conditions for processing the substrate based on the predicted line before stopping the supply of the processing liquid; A substrate processing apparatus comprising:

2. The substrate processing apparatus according to claim 1 , wherein the component abundance measurement unit measures the abundance of the specific component contained in the removal target on the substrate using infrared light.

3. 3. The substrate processing apparatus according to claim 1, wherein the processing condition changing unit changes the substrate processing conditions for processing the substrate based on the substrate processing conditions and processing results for the learning target substrate.

4. A substrate holding part that holds a substrate; a processing liquid supply unit that supplies a processing liquid to the substrate; a component abundance measurement unit for measuring the abundance of a specific component in the substrate; a control unit that controls the substrate holding unit, the processing liquid supply unit, and the component abundance measuring unit; A substrate processing apparatus comprising: The control unit a time change acquisition unit that acquires a time change in the abundance of the specific component based on the abundance of the specific component of the substrate measured by the component abundance measurement unit during a specific period within a processing liquid supply period from when the processing liquid supply unit starts to supply the processing liquid to the substrate until when the processing liquid supply unit stops supplying the processing liquid; a prediction line creation unit that creates a prediction line that predicts the time change in the abundance of the specific component on the substrate after the specific period during the processing liquid supply period, based on the time change in the abundance of the specific component acquired by the time change acquisition unit; a processing condition changing unit that changes substrate processing conditions for processing the substrate based on the predicted line before stopping the supply of the processing liquid; Including, The processing condition change unit changes the substrate processing conditions for processing the substrate based on a trained model constructed by machine learning learning data that associates substrate processing conditions and processing results for the target substrate.

5. 5. The substrate processing apparatus according to claim 1, wherein the processing condition change unit changes a processing liquid supply period during which the processing liquid supply unit supplies the processing liquid based on the time change in the amount of the specific component acquired by the time change acquisition unit.

6. The substrate processing apparatus according to claim 5 , wherein the processing condition changing unit shortens the processing liquid supply period based on the time change in the amount of the specific component acquired by the time change acquiring unit.

7. 5. A substrate processing apparatus according to claim 1, wherein the processing condition change unit changes any of the flow rate, concentration, and temperature of the processing liquid for processing the substrate, the substrate rotation speed at which the substrate is rotated by the substrate holding unit, and the processing liquid supply period for supplying the processing liquid, based on the time change in the amount of the specific component acquired by the time change acquisition unit.

8. The substrate processing apparatus according to claim 1 , wherein the processing condition changing unit changes the substrate processing conditions for processing the substrate while the processing liquid supply unit continues to supply the processing liquid.

9. 8. The substrate processing apparatus according to claim 1, wherein the processing condition change unit changes the substrate processing conditions for processing a substrate different from the substrate for which the time change acquisition unit has acquired the amount of the specific component, based on the time change in the amount of the specific component acquired by the time change acquisition unit.

10. A process of measuring the amount of a specific component present in a material to be removed on the substrate during a specific period of time during which the supply of a processing solution to the substrate begins and ends while the substrate held by a substrate holder is rotating; acquiring a time change in the abundance of the specific component based on the abundance of the specific component contained in the removal target on the substrate measured in the measuring step; creating a prediction line that predicts the change over time in the amount of the specific component contained in the removal target on the substrate after the specific period during the supply period of the processing liquid, based on the change over time in the amount of the specific component acquired in the step of acquiring the change over time; changing substrate processing conditions for processing the substrate based on the predicted line before stopping the supply of the processing liquid; A substrate processing method comprising:

11. A step of measuring the amount of a specific component present on the substrate during a specific period of time during which the supply of the processing liquid to the substrate begins and ends; acquiring a time change in the abundance of the specific component based on the abundance of the specific component in the substrate measured in the measuring step; creating a prediction line that predicts the time change in the abundance of the specific component on the substrate after the specific period during the supply period of the processing liquid, based on the time change in the abundance of the specific component acquired in the step of acquiring the time change; changing substrate processing conditions for processing the substrate based on the predicted line before stopping the supply of the processing liquid; It encompasses A substrate processing method, wherein the step of changing the substrate processing conditions includes a step of changing the substrate processing conditions for processing the substrate based on a trained model constructed by machine learning learning data that associates substrate processing conditions and processing results for a target substrate.

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