Intake assembly, process chamber and semiconductor process device

Abstract

The present invention provides an air intake assembly, a process chamber and a semiconductor processing device, the air intake assembly includes an air intake sheet and an airflow adjustment assembly, the air intake sheet has an exhaust port and is used for transporting process gas into the process chamber, the airflow adjustment assembly is disposed on the side of the air intake sheet adjacent to the exhaust port, the airflow adjustment assembly includes a plurality of partition plates and a support member, the plurality of partition plates are spaced apart in the length direction of the air intake sheet, an adjustment passage is formed between two adjacent partition plates, each of the partition plates can rotate around its respective rotation axis, the rotation axis extends in the height direction of the air intake sheet to adjust the exhaust direction of the adjustment passage, the length direction of the air intake sheet is mutually perpendicular to the exhaust direction of the exhaust port and mutually perpendicular to the height direction of the air intake sheet.

Description

[Technical Field]

[0001] The present invention relates to the field of semiconductor manufacturing, and more particularly to an intake assembly, a process chamber, and a semiconductor processing apparatus. [Background technology]

[0002] FIG. 1 is a side view of a process chamber of a conventional multi-wafer epitaxial growth apparatus. FIG. 2 is a plan view of the process chamber of the conventional multi-wafer epitaxial growth apparatus. FIG. 3 is a schematic diagram showing the distribution of exhaust ports of an intake assembly 12 of the process chamber shown in FIG. 2. As shown in FIGS. 1 to 3, an intake assembly 12 having multiple exhaust ports 121 for transporting process gas horizontally into the process chamber 11 is provided on one side of the process chamber 11. As shown in FIG. 3, the multiple exhaust ports 121 are arranged in a horizontal row perpendicular to the intake direction. A rotatable graphite base 13 having multiple slots 131 for placing wafers (e.g., silicon wafers) is further provided within the process chamber 11. The multiple slots 131 are evenly spaced around the circumference of the graphite base 13. A heating coil 14 is provided below the process chamber 11. The heating coil 14 heats the graphite base 13 by induction heating, thereby indirectly heating the wafers and performing an epitaxial growth process at a constant temperature.

[0003] However, during the process, when the process gas flowing out from the multiple exhaust ports 121 flows horizontally through the graphite base 13, the airflow first reaches the outer ring region of the graphite base 13 close to the exhaust ports 121, and then reaches the inner ring region. This results in a difference in the airflow concentration in the corresponding outer ring region of the graphite base 13 and the airflow concentration in the corresponding inner ring region. As a result, the thickness of the epitaxial layer between the inner ring region and the outer ring region is not consistent. Therefore, in order to ensure the consistency of the epitaxial layer thickness, the conventional technology can only arrange wafers around the outer ring region of the graphite base 13 once, but cannot arrange wafers around the inner ring region and the outer ring region twice, which reduces productivity. Summary of the Invention [Problem to be solved by the invention]

[0004] In order to solve at least one of the technical problems existing in the prior art, the present invention proposes an intake assembly, a process chamber, and a semiconductor processing apparatus that can solve the problem of poor consistency in epitaxial layer thickness between different regions of a base due to differences in air flow concentration between different regions, thereby enabling wafers to be placed multiple times on the base while ensuring consistency in epitaxial layer thickness, and further improving productivity. [Means for solving the problem]

[0005] In order to achieve the object of the present invention, an intake assembly applied to a process chamber of a semiconductor process device includes an intake sheet and an airflow adjustment assembly, the intake sheet has an exhaust port and is used to transport process gas into the process chamber; The airflow adjustment assembly is provided on the side of the intake sheet adjacent to the exhaust port, and includes a plurality of partition plates and a support member connected to the plurality of partition plates and supporting the plurality of partition plates, the plurality of partition plates are spaced apart in the longitudinal direction of the intake sheet, an adjustment passage is formed between two adjacent partition plates, each of the partition plates is rotatable around its respective rotation axis, the rotation axis extends in the height direction of the intake sheet and adjusts the exhaust direction of the adjustment passage, and the longitudinal direction of the intake sheet is perpendicular to the exhaust direction of the exhaust port and perpendicular to the height direction of the intake sheet.

[0006] Optionally, the airflow adjustment assembly further includes at least one interlocking member, each of which is connected to a plurality of the partition plates and is used to enable the plurality of partition plates connected to the same interlocking member to be interlocked and to make the rotation angles of the plurality of partition plates the same.

[0007] Optionally, the interlocking member is provided with a plurality of limiting portions spaced apart in the longitudinal direction, and each limiting portion on the interlocking member is used to limit the position on the interlocking member of each partition plate connected to the interlocking member in a one-to-one correspondence.

[0008] Optionally, the interlocking member includes a horizontal rod, the partition plate has a through hole penetrating the partition plate in the longitudinal direction, the horizontal rod passes through the through hole in each of the corresponding partition plates, and the limiting portion is a limiting groove formed in the horizontal rod, and the limiting groove is engaged with the edge of the through hole.

[0009] Optionally, the airflow adjustment assembly further includes a flow uniformization plate, the flow uniformization plate being fixedly connected to the support member and positioned between the exhaust port and the partition plate, the flow uniformization plate being provided with a plurality of gas uniformization hole groups, the plurality of gas uniformization hole groups being provided in one-to-one correspondence with the plurality of adjustment passages, each of the gas uniformization hole groups including a plurality of gas uniformization holes, and the plurality of gas uniformization holes being arranged in the height direction and / or the length direction.

[0010] Optionally, the support member includes an upper beam and a lower beam, the upper beam and the lower beam being arranged opposite each other in the height direction, the partition plate being positioned between the upper beam and the lower beam, the upper beam and the lower beam being rotatably connected to the plurality of partition plates in one-to-one correspondence via a plurality of pivot shafts, and the axis of the pivot shaft is the rotation axis.

[0011] Optionally, the pivot shaft includes two coaxially arranged pivot pins, which pivotally connect the partition plate to the upper beam and the lower beam, respectively.

[0012] Optionally, the plurality of partition plates are divided into four partition plate groups, which are a first partition plate group, a second partition plate group, a third partition plate group, and a fourth partition plate group, respectively; the first partition plate group and the second partition plate group are provided symmetrically with respect to a central axis in the length direction of the intake sheet, the third partition plate group and the fourth partition plate group are provided symmetrically on both sides of the first partition plate group and the second partition plate group with respect to a central axis in the longitudinal direction of the intake sheet, the exhaust direction of the adjustment passages of the first partition plate group and the second partition plate group faces a central axis of the intake sheet in the length direction, The exhaust direction of the adjustment passages of the third partition plate group and the fourth partition plate group is away from the central axis of the intake sheet in the length direction.

[0013] Optionally, three mutually independent intake passages are provided in the intake sheet, each of the intake passages has a plurality of the exhaust ports, and one of the intake passages is separated from the first partition plate. group and the second partition plate group The other two intake passages are connected to the third partition plate. group and the fourth partition group The adjustment passage is connected to the inner passage.

[0014] As another technical solution, an embodiment of the present invention further provides a process chamber including a chamber body, a base, and the above-mentioned intake assembly according to the embodiment of the present invention, wherein the intake assembly is disposed on one side of the chamber body, and the base is disposed within the chamber body, and the process chamber is used to place multiple wafers.

[0015] the base is selectively provided with an inner ring mounting portion and an outer ring mounting portion for mounting the plurality of wafers thereon, the outer ring mounting portion surrounding the outer side of the inner ring mounting portion; The plurality of partition plates are divided into four partition plate groups, which are a first partition plate group, a second partition plate group, a third partition plate group, and a fourth partition plate group, the first partition plate group and the second partition plate group are provided symmetrically with respect to a central axis in the length direction of the intake sheet, the third partition plate group and the fourth partition plate group are provided symmetrically on both sides of the first partition plate group and the second partition plate group with respect to a central axis in the longitudinal direction of the intake sheet, the exhaust direction of the adjustment passages of the first partition plate group and the second partition plate group faces a central axis of the intake sheet in the length direction, the exhaust direction of the adjustment passages of the third partition plate group and the fourth partition plate group is away from the central axis of the intake sheet in the length direction, The combined length of the first partition plate group, the second partition plate group, the third partition plate group and the fourth partition plate group in the longitudinal direction is greater than or equal to the length of the outer ring mounting portion in the longitudinal direction, and the combined length of the first partition plate group and the second partition plate group corresponds to the length of the inner ring mounting portion in the longitudinal direction.

[0016] As another technical solution, an embodiment of the present invention further provides a semiconductor processing apparatus, including the above-mentioned process chamber according to an embodiment of the present invention. [Effects of the Invention]

[0017] The present invention has the following beneficial effects.

[0018] According to the intake assembly of the present invention, an airflow adjustment assembly is provided at the exhaust port of the intake sheet, and an adjustment passage is formed between two adjacent partition plates in the airflow adjustment assembly, and each partition plate is rotatable around its respective rotation axis to adjust the exhaust direction of the adjustment passage. In this way, when the process gas flowing out of the exhaust port passes through the adjustment passage, the exhaust direction of the adjustment passage can be adjusted by rotating the partition plate, thereby exerting the effect of guiding the process gas. Furthermore, the gas concentration distribution in different regions inside the chamber body can be adjusted, reducing the gas concentration difference between different regions of the corresponding base, and improving the consistency of the epitaxial layer thickness between different regions of the base. As a result, under the premise of ensuring the consistency of the epitaxial layer thickness, wafers can be placed around the base multiple times, further improving productivity.

[0019] According to the process chamber of the present invention, the use of the above-mentioned intake assembly of the present invention can improve the consistency of the epitaxial layer thickness between different regions of the base, thereby allowing multiple rotations of wafers on the base while ensuring the consistency of the epitaxial layer thickness, further improving productivity.

[0020] According to the semiconductor processing apparatus of the present invention, by using the above-mentioned process chamber of the present invention, the consistency of the epitaxial layer thickness between different regions of the base can be improved, thereby allowing multiple wafers to be placed around the base, provided that the consistency of the epitaxial layer thickness is ensured, further improving productivity. [Brief explanation of the drawings]

[0021] [Figure 1] FIG. 1 is a side view of a process chamber of a conventional multi-wafer epitaxial growth apparatus. [Figure 2] FIG. 1 is a plan view of a process chamber of a conventional multi-wafer epitaxial growth apparatus. [Figure 3] 3 is a schematic diagram showing the distribution of exhaust ports of an intake assembly of the process chamber in FIG. 2. [Figure 4] 1 is a structural schematic diagram of a process chamber according to an embodiment of the present invention; [Figure 5] 1 is a cross-sectional view of an intake assembly according to an embodiment of the present invention. [Figure 6] 1 is a structural diagram of an airflow adjustment assembly according to an embodiment of the present invention; [Figure 7] FIG. 10 is a structural diagram of another airflow adjustment assembly according to an embodiment of the present invention. [Figure 8] FIG. 8 is a structural diagram of the airflow adjustment assembly in FIG. 7. [Figure 9] 8 is a cross-sectional view of the airflow adjustment assembly in FIG. 7 along the XZ cross section. [Figure 10] FIG. 10 is a structural diagram of yet another airflow adjustment assembly according to an embodiment of the present invention. [Figure 11] 11 is a cross-sectional view of the airflow adjustment assembly in FIG. 10 taken along the XZ cross section. [Figure 12] FIG. 2 is a schematic diagram of a wafer arrangement according to an embodiment of the present invention. [Figure 13] FIG. 10 is a schematic diagram of another wafer arrangement according to an embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0022] In order to help those skilled in the art better understand the technical solutions of the present invention, the intake assembly, process chamber and semiconductor process device of the present invention will be described in detail below with reference to the drawings.

[0023] 4 and 5 , an embodiment of the present invention provides a process chamber 3, which includes a chamber body 31, a base 32, and an intake assembly 2. The intake assembly 2 is located on one side of the chamber body 31, and the base 32 is located within the chamber body 31 and is used to accommodate multiple wafers. Optionally, the base 32 may be provided with multiple slots 321, each of which accommodates one wafer. Of course, in actual applications, the slots 321 may be omitted. For example, if the process chamber 3 is used in an epitaxial growth apparatus, the base 32 can be rotatable, which helps to create uniform airflow and temperature fields around the base 32 during processing in the area where the wafers are located, thereby improving the consistency of the epitaxial layer thickness. An exhaust assembly 4 is further provided on the side of the chamber body 31 opposite the intake assembly 2 to exhaust gas from the chamber body 31.

[0024] In some alternative embodiments, the base 32 is provided with an inner ring mounting portion and an outer ring mounting portion for mounting multiple wafers, with the outer ring mounting portion surrounding the outer ring mounting portion. For example, as shown in FIG. 4 , multiple slots 321 are arranged around the base 32 in two circumferential directions, with the slots 321 located on the outer ring of the base 32 constituting the outer ring mounting portion C1 and the slots 321 located on the inner ring constituting the inner ring mounting portion C2. In this manner, the number of wafers per process can be significantly increased, thereby improving productivity. Note that in actual applications, the multiple slots 321 may be arranged around the base 32 in three or more circumferential directions, and this is not a limitation of the embodiments of the present invention.

[0025] 4 and 5, an air intake assembly 2 according to an embodiment of the present invention includes an air intake sheet 21 and an airflow control assembly 5. The air intake sheet 21 has exhaust ports 23 for transporting process gas into the process chamber 3. The exhaust ports 23 may be one or more. Optionally, the multiple exhaust ports 23 are arranged in a row along the length of the air intake sheet 21 (i.e., the Y direction). The length of the air intake sheet 21 is perpendicular to the exhaust direction of the exhaust ports 23 (i.e., the X direction) and perpendicular to the height direction of the air intake sheet 21 (i.e., the Z direction). For example, if the exhaust direction of the exhaust ports 23 is horizontal, the length of the air intake sheet 21 is horizontal, perpendicular to the exhaust direction, and the height direction of the air intake sheet 21 is vertical. By arranging the multiple exhaust ports 23 in a row along the length of the air intake sheet 21 (i.e., the Y direction), process gas can be uniformly transported into the chamber body 31 in the Y direction. In practical applications, the shape, size, and arrangement of each exhaust port 23 can be designed according to specific needs, and the embodiments of the present invention do not particularly limit this.

[0026] The airflow adjustment assembly 5 is provided on the side of the intake sheet 21 adjacent to the exhaust port 23 (i.e., located downstream of the exhaust port 23 in the X direction), and specifically, the airflow adjustment assembly 5 may be attached to the intake sheet 21 by a fixing device 6, which may be, for example, a fixing pin.

[0027] Specifically, as shown in FIG. 6 , the airflow control assembly 5 includes a support member 51 and a plurality of partition plates 52. The partition plates 52 are connected to the support member 51 and are used to support the partition plates 52. Alternatively, the support member 51 may be fixedly connected to the air intake assembly 2. Specifically, the support member 51 may have a frame structure, for example. The frame structure may include an upper beam and a lower beam facing each other in the Z direction. A fixing plate is connected between the upper and lower beams to provide support and fixing between the upper and lower beams. The distance between the upper and lower beams in the Z direction must be equal to or greater than the size of the exhaust port 23 to avoid affecting the airflow. Of course, in practical applications, the support member 51 may have any other structure, and this embodiment of the present invention is not particularly limited thereto.

[0028] As shown in Figures 6 and 8, multiple partition plates 52 are arranged at intervals in the length direction (i.e., Y direction) of the intake sheet 21, and an adjustment passage 53 is formed between two adjacent partition plates 52. Each partition plate 52 is rotatable around its respective rotation axis 52a, which extends in the height direction (i.e., Z direction) of the intake sheet 21 and adjusts the exhaust direction of the adjustment passage 53. The length direction (i.e., Y direction) of the intake sheet 21 is perpendicular to the exhaust direction of the exhaust port 23 (i.e., X direction) and is perpendicular to the height direction (i.e., Z direction) of the intake sheet 21. In this way, all process gases flowing out from each exhaust port 23 flow into the chamber body 31 through the adjustment passage 53 between each two adjacent partition plates 52. As shown in FIG. 8, each partition plate 52 is connected to a support member 51 (e.g., an upper beam, a lower beam), and each partition plate 52 is rotatable around its respective rotation axis 52a, thereby making it possible to adjust the included angle between the partition plate 52 and the exhaust direction of the exhaust port 23 (i.e., the X direction), and thereby adjusting the exhaust direction of the adjustment passage 53.

[0029] When the process gas flowing out from the exhaust port 23 passes through the adjustment passage 53 between each pair of adjacent partition plates 52, the exhaust direction of the adjustment passage 53 can be adjusted by rotating the partition plates 52, thereby exerting the flow-guiding effect of the process gas and further adjusting the gas concentration distribution in different regions inside the chamber body 31, and reducing the gas concentration difference between different regions of the corresponding base 32.

[0030] Taking the example of adjusting the gas concentration difference between the inner ring mounting portion C2 and the outer ring mounting portion C1 of the base 32, as shown in Figure 4, the interior of the chamber main body 31 is divided into a central region A and two edge regions (B1, B2) located on either side of the central region A in the longitudinal direction of the intake sheet 21 (i.e., the Y direction), and the central region A is further divided into two central sub-regions (A1, A2) in the longitudinal direction (i.e., the Y direction). In some alternative embodiments, the length of the central region A in the longitudinal direction is equal to the length of the inner ring mounting portion C2 of the base 32 in the longitudinal direction. In this way, the airflow passing through the central region A is correspondingly made to pass through the inner ring mounting portion C2, and the airflow passing through the two edge regions (B1, B2) is correspondingly made to pass through the outer ring mounting portion C1, thereby adjusting the airflow direction of the central region A and the two edge regions (B1, B2) respectively, thereby realizing regional adjustment of the airflow direction of the inner ring mounting portion C2 and the outer ring mounting portion C1, and reducing the gas concentration difference between the corresponding inner ring mounting portion C2 and outer ring mounting portion C1.

[0031] In order to achieve the regional adjustment of the gas direction after adopting the above-mentioned partitioning method inside the chamber, as shown in FIG. 6, the partition plates 52 are divided into four partition plate groups, namely, a first partition plate group, a second partition plate group, a third partition plate group, and a fourth partition plate group, and the first partition plate group and the second partition plate group are arranged symmetrically with respect to the central axis O in the length direction (i.e., Y direction) of the intake sheet 21, that is, they correspond to two central sub-regions (A1, A2), respectively. In addition, the exhaust direction of the adjustment passages 53 of the first partition plate group and the second partition plate group faces the central axis O in the length direction (i.e., Y direction) of the intake sheet 21, and the exhaust direction is central axis6, the exhaust direction of the adjustment passage 53 corresponding to the first partition plate group and the exhaust direction of the adjustment passage 53 corresponding to the second partition plate group both converge toward the central axis O, thereby increasing the airflow flowing toward the inner ring mounting portion C2 and increasing the gas concentration at the inner ring mounting portion C2.

[0032] The third partition plate group and the fourth partition plate group are arranged symmetrically with respect to the central axis O in the longitudinal direction (i.e., the Y direction) of the intake sheet 21, and are located on both sides of the first partition plate group and the second partition plate group, respectively; that is, they correspond to two edge regions (B1, B2), respectively; and the exhaust direction of the adjustment passages 53 of the third partition plate group and the fourth partition plate group is away from the central axis O in the longitudinal direction (i.e., the Y direction) of the intake sheet 21, and the exhaust direction of the adjustment passages 53 of the third partition plate group forms an included angle b1 with the central axis O, and the exhaust direction of the adjustment passages 53 of the fourth partition plate group forms an included angle b2 with the central axis. 6, the exhaust direction of adjustment passage 53 corresponding to the third partition plate group and the exhaust direction of adjustment passage 53 corresponding to the fourth partition plate group both diverge in a direction away from central axis O, thereby reducing the airflow flowing toward outer ring mounting portion C1 and lowering the gas concentration at outer ring mounting portion C1. This increases the gas concentration at inner ring mounting portion C2 and / or decreases the gas concentration at outer ring mounting portion C1, thereby reducing the difference in gas concentration between the corresponding inner ring mounting portion C2 and outer ring mounting portion C1.

[0033] Based on this, in one alternative embodiment, as shown in FIG. 5, three mutually independent intake passages (not shown) are provided in the intake sheet 21, each of which has a plurality of exhaust ports 23, and one intake passage is provided between the first partition plate 21 and the second partition plate 22. group and the second partition group The other two intake passages are connected to the third partition plate. group and the fourth partition groupThe three intake passages are connected to the adjustment passage 53 inside the chamber body 31. In this way, the process gas can be delivered independently using the three intake passages, thereby enabling independent adjustment of the gas flow rates from the exhaust ports 23 corresponding to the central region A and the two edge regions (B1, B2). This not only reduces the mutual influence of the gas flow between the central region A and the two edge regions (B1, B2) of the chamber body 31 and further improves the consistency of the epitaxial layer thickness between the inner and outer ring regions of the base, but also increases the means for adjusting the gas concentration distribution in different regions inside the chamber body 31 and improves adjustment flexibility. Of course, in actual applications, the number and layout of the intake passages, intake passages, and exhaust ports 23 can be adaptively adjusted depending on the different internal partitioning methods of the chamber body 31. Optionally, as shown in FIG. 5, the intake assembly further includes three intake pipes 24, each of which is connected to the intake port of each intake through-hole and delivers process gas into the three intake passages.

[0034] As can be seen from the above, different partition plate groups can adjust the exhaust direction of the adjustment passages 53 corresponding to different regions inside the chamber body 31, thereby adjusting the gas concentration in different regions inside the chamber body 31. For example, by increasing the airflow flowing to the inner ring mounting portion C2 and reducing the airflow flowing to the outer ring mounting portion C1, the gas concentration difference between the inner ring mounting portion C2 and the outer ring mounting portion C1 of the base 32 can be reduced, thereby improving the consistency of the epitaxial layer thickness between different regions of the base. Furthermore, provided that the consistency of the epitaxial layer thickness is ensured, wafers can be arranged multiple times on the base, further improving productivity.

[0035] In actual applications, the number of regions and partitioning method inside the chamber body 31 can be adaptively adjusted according to different wafer arrangements on the base 32, and the exhaust direction of the adjustment passages 53 of the partition plate group corresponding to each region can be adjusted accordingly.

[0036] 8, the support member 51 includes an upper beam 51a and a lower beam 51a, which are arranged opposite each other in the height direction (i.e., in the direction parallel to the rotation axis 52a), and each partition plate 52 is located between the upper beam 51a and the lower beam 51a. The upper beam 51a and the lower beam 51a are rotatably connected to the partition plates 52 in a one-to-one correspondence via a plurality of rotation shafts, the axes of which are the rotation axis 52a. In some alternative embodiments, the rotation shaft includes two coaxially arranged rotation pins 55, which rotatably connect the partition plates 52 to the upper beam 51a and the lower beam 51a, respectively.

[0037] In some alternative embodiments, at least two partition plates in the same corresponding region are made synchronously rotatable around their respective rotation axes 52a to enable interlocking of the at least two partition plates. As shown in Fig. 7, the airflow control assembly 5 further includes at least one interlocking member 56, each of which is connected to a plurality of partition plates 52 and is used to interlock the plurality of partition plates 52 connected to the same interlocking member 56, so that the rotation angles of the plurality of partition plates 52 are the same, while the rotation angles of the partition plates 52 connected to different interlocking members 56 are different. For example, as shown in Fig. 7, there are four interlocking members 56, and the four interlocking members 56 correspond to four partition plate groups, respectively, so that all the partition plates 52 in the same partition plate group are interlocked.

[0038] In some alternative embodiments, as shown in Fig. 8, the interlocking member 56 is provided with a plurality of limiting portions spaced apart in the length direction of the intake sheet 21 (i.e., the Y direction), and each limiting portion on the interlocking member 56 is used to limit the position of each partition plate 52 connected to the interlocking member 56 on the interlocking member 56 in a one-to-one correspondence. The limiting portions may have various structures. For example, as shown in Fig. 9, the interlocking member 56 includes a horizontal rod, and the partition plates 52 are provided with through holes 521 that penetrate the partition plates 52 in the length direction of the intake sheet 21 (i.e., the Y direction), and the horizontal rods penetrate the corresponding through holes 521 in the partition plates 52. Also, as shown in Fig. 8, the limiting portions are limiting grooves 561 formed in the horizontal rods, which engage with the edges of the through holes 521 to limit the position of the partition plates 52 on the horizontal rods, thereby driving the partition plates 52 to rotate. In actual applications, the through-hole 521 may be located near the upstream edge of the partition plate 52 in the X direction, and the height position of the horizontal rod in the Z direction may be offset from the intake port, thereby minimizing the effect of the horizontal rod on the airflow.

[0039] 7, the support member 51 further includes at least one fixing plate 511, each of which is detachably connected to one end of each horizontal rod. The fixing plate 511 limits the position of the horizontal rod in the longitudinal direction (i.e., the Y direction) of the intake sheet 21 and fixes the position of each partition plate 52 corresponding to the horizontal rod. After adjusting the angle of each partition plate 52 connected to the horizontal rod by moving the horizontal rod in the Y direction, the partition plate can be fixed at its current angular position by fixing one end of the horizontal rod to the fixing plate 511. The one end of the horizontal rod may be connected to the fixing plate 511 by any other detachable method, such as a screw connection or engagement with a fastener.

[0040] Before carrying out the process, first, the horizontal rod is moved in the Y direction to adjust the angle of each partition plate 52 connected to the horizontal rod, and after the adjustment is completed, the angular position of the partition plate is fixed at the current angular position, and then the process is carried out.

[0041] The method for fixing the angular position of the partition plate at the current angular position is not limited to the above-mentioned method adopted in the embodiment of the present invention. For example, a damper may be provided between at least one partition plate 52 and the support member 51, and this is not particularly limited in the embodiment of the present invention.

[0042] Furthermore, in practical applications, according to specific needs, the interlocking member may be connected to a driving source, and the driving source may be used to drive the interlocking member to drive and interlock at least two partition plates 52 connected thereto, thereby realizing automatic adjustment of the angles of the partition plates 52. The driving source may be, for example, an electric cylinder, an air cylinder, or a hydraulic cylinder.

[0043] In some alternative embodiments, as shown in FIGS. 10 and 11 , the airflow adjustment assembly 5 further includes a flow uniformity plate 54, which is fixedly connected to the support member 51 and located between the exhaust port 23 and the partition plate 52. Alternatively, as shown in FIG. 11 , the flow uniformity plate 54 may be integrally formed with the support member 51, i.e., the flow uniformity plate 54 is integrally connected to each fixed plate 511, the upper beam, and the lower beam, and the flow uniformity plate 54 is located upstream of all the partition plates 52 in the X direction.

[0044] In order to more clearly show the structure of the flow equalization plate 54, the interlocking member 56 is not shown in FIG. 10. However, in actual applications, it is possible to choose whether or not to provide the interlocking member 56 depending on specific needs.

[0045] The flow uniformity plate 54 is provided with a plurality of gas uniformity hole groups, the number of which is the same as the number of adjustment passages between two adjacent partition plates 52, and is provided in one-to-one correspondence. Each gas uniformity hole group includes a plurality of gas uniformity holes 541, and the plurality of gas uniformity holes 541 are arranged in the height direction (i.e., Z direction) and / or length direction (i.e., Y direction). For example, FIG. 10 shows that each gas uniformity hole group has three gas uniformity holes 541, which are spaced apart in the Z direction. The plurality of gas uniformity holes 541 in the flow uniformity plate 54 serve to uniformize the process gas flowing out from the exhaust port 23, allowing the process gas to more uniformly flow into the adjustment passages between each pair of adjacent partition plates 52.

[0046] In some alternative embodiments, to ensure the consistency of the epitaxial layer thickness, the base 32 may be provided with an outer ring support portion C1 and an inner ring support portion C2. For example, two peripheral slots 321 may be provided to accommodate two wafers, thereby improving productivity. For example, as shown in FIG. 12 , the two peripheral slots 321 of the base 32 may accommodate a total of 18 5-inch wafers, with the slots 321 located in the outer ring accommodating 12 5-inch wafers and the slots 321 located in the inner ring accommodating 6 5-inch wafers. Alternatively, as shown in FIG. 13 , the two peripheral slots 321 of the base 32 may accommodate a total of 27 4-inch wafers, with the slots 321 located in the outer ring accommodating 17 4-inch wafers and the slots 321 located in the inner ring accommodating 10 4-inch wafers. Of course, in actual applications, the base 32 may be provided with three or more peripheral support portions according to specific needs, and this is not a limitation of the embodiments of the present invention.

[0047] As described above, in the air intake assembly according to an embodiment of the present invention, an airflow control assembly is provided at the exhaust port of the air intake sheet, and an adjustment passage is formed between two adjacent partition plates within the airflow control assembly. Each partition plate is rotatable around its respective rotation axis to adjust the exhaust direction of the adjustment passage. In this way, when the process gas flowing out of the exhaust port passes through the adjustment passage, the exhaust direction of the adjustment passage can be adjusted by rotating the partition plate, thereby exerting the effect of guiding the process gas. This also adjusts the gas concentration distribution in different regions within the chamber body, reduces the gas concentration difference between different regions of the corresponding base, and improves the consistency of the epitaxial layer thickness between different regions of the base. This allows wafers to be placed around the base multiple times, provided that the consistency of the epitaxial layer thickness is ensured, further improving productivity.

[0048] As another technical solution, an embodiment of the present invention further provides a process chamber, such as the process chamber 3 shown in FIG. 4, which includes a chamber body 31, a base 32, and an intake assembly 2, the intake assembly 2 being disposed on one side of the chamber body 31, and the base 32 being disposed within the chamber body 31 and used to mount multiple wafers.

[0049] In some alternative embodiments, the base 32 is provided with an inner ring mounting portion and an outer ring mounting portion for mounting a plurality of wafers, and the outer ring mounting portion surrounds the outside of the inner ring mounting portion. For example, as shown in Fig. 4, a plurality of slots 321 are arranged around the base 32 in two circumferential directions, and the slots 321 located on the outer ring of the base 32 constitute the outer ring mounting portion C1, and the slots 321 located on the inner ring constitute the inner ring mounting portion C2. As shown in Figure 6, the multiple partition plates 52 are divided into four partition plate groups, namely, the first partition plate group, the second partition plate group, the third partition plate group, and the fourth partition plate group, and the combined length in the longitudinal direction (i.e., Y direction) of the first partition plate group, the second partition plate group, the third partition plate group, and the fourth partition plate group is greater than the length in the longitudinal direction (i.e., Y direction) of the outer ring mounting portion C1, thereby ensuring that the airflow entering the process chamber 3 covers the entire surface of the base; and the combined length in the longitudinal direction (i.e., Y direction) of the first partition plate group and the second partition plate group corresponds to the length in the longitudinal direction (i.e., Y direction) of the inner ring mounting portion C2, thereby adjusting the direction of the airflow flowing to the inner ring mounting portion C2.

[0050] According to the process chamber of the embodiment of the present invention, the use of the above-mentioned intake assembly of the embodiment of the present invention can improve the consistency of the epitaxial layer thickness between different regions of the base, thereby allowing multiple rotations of wafers on the base while ensuring the consistency of the epitaxial layer thickness, further improving productivity.

[0051] As another technical solution, an embodiment of the present invention further provides a semiconductor processing apparatus, including the above-mentioned process chamber according to an embodiment of the present invention.

[0052] According to the semiconductor processing apparatus of the embodiment of the present invention, by using the above-mentioned process chamber of the present invention, the consistency of the thickness of the epitaxial layer between different regions of the base can be improved, thereby allowing multiple wafers to be placed around the base, provided that the consistency of the thickness of the epitaxial layer is ensured, further improving productivity.

[0053] It should be understood that the above embodiments are merely exemplary embodiments for explaining the principles of the present invention, and the present invention is not limited thereto. Those skilled in the art may make various modifications and improvements without departing from the spirit and essence of the present invention, and these modifications and improvements also fall within the scope of protection of the present invention.

Claims

1. An air intake assembly for use in a process chamber of a semiconductor process device, the air intake assembly including an air intake sheet and an airflow adjustment assembly, the intake sheet has an exhaust port and is used to transport process gas into the process chamber; The airflow control assembly is provided on the side of the intake sheet adjacent to the exhaust port, and includes a plurality of partition plates and support members connected to the plurality of partition plates for supporting the plurality of partition plates, the plurality of partition plates are arranged at intervals in the longitudinal direction of the intake sheet, an adjustment passage is formed between two adjacent partition plates, each of the partition plates is rotatable around its respective rotation axis, the rotation axis extends in the height direction of the intake sheet and adjusts the exhaust direction of the adjustment passage, the length direction of the intake sheet is perpendicular to the exhaust direction of the exhaust port and perpendicular to the height direction of the intake sheet, and the airflow control assembly further includes at least one interlocking member, each of the interlocking members is connected to a plurality of the partition plates and is used to interlock the plurality of partition plates connected to the same interlocking member and to make the rotation angles of the plurality of partition plates the same.

2. The intake assembly of claim 1, characterized in that the interlocking member has a plurality of limiting portions spaced apart in the longitudinal direction, and each limiting portion on the interlocking member is used to limit the position of each partition plate connected to the interlocking member on the interlocking member in a one-to-one correspondence.

3. 3. The intake assembly of claim 2, wherein the interlocking member includes a horizontal rod, the partition plate has a through hole penetrating the partition plate in the longitudinal direction, the horizontal rod passes through the through hole in each of the partition plates corresponding to the horizontal rod, and the limiting portion is a limiting groove formed in the horizontal rod, and the limiting groove is engaged with an edge of the through hole.

4. 2. The air intake assembly of claim 1, wherein the airflow adjustment assembly further comprises a flow uniformity plate, the flow uniformity plate being fixedly connected to the support member and positioned between the exhaust port and the partition plate, the flow uniformity plate being provided with a plurality of gas uniformity hole groups, the plurality of gas uniformity hole groups being provided in one-to-one correspondence with the plurality of adjustment passages, each of the gas uniformity hole groups including a plurality of gas uniformity holes, and the plurality of gas uniformity holes being arranged in the height direction and / or the length direction.

5. 2. The intake assembly of claim 1, wherein the support member includes an upper beam and a lower beam, the upper beam and the lower beam being arranged opposite each other in the height direction, the partition plate being positioned between the upper beam and the lower beam, the upper beam and the lower beam being rotatably connected to the plurality of partition plates in a one-to-one correspondence via a plurality of pivot shafts, and the axis of the pivot shaft is the rotation axis.

6. 6. The air intake assembly according to claim 5, wherein the pivot shaft includes two coaxially arranged pivot pins, the two pivot pins pivotally connecting the partition plate to the upper beam and the lower beam, respectively.

7. The plurality of partition plates are divided into four partition plate groups, which are a first partition plate group, a second partition plate group, a third partition plate group, and a fourth partition plate group, the first partition plate group and the second partition plate group are provided symmetrically with respect to a central axis in the length direction of the intake sheet, the third partition plate group and the fourth partition plate group are provided symmetrically on both sides of the first partition plate group and the second partition plate group with respect to a central axis in the longitudinal direction of the intake sheet, an exhaust direction of the adjustment passages of the first partition plate group and the second partition plate group faces a central axis of the intake sheet in the length direction; 2. The air intake assembly according to claim 1, wherein the exhaust direction of the adjustment passages of the third and fourth partition plate groups is away from the central axis of the air intake sheet in the length direction.

8. The intake assembly of claim 7, characterized in that three independent intake passages are provided within the intake sheet, each of the intake passages having a plurality of exhaust ports, one of the intake passages communicating with the adjustment passages within the first partition plate group and the second partition plate group, and the other two of the intake passages communicating with the adjustment passages within the third partition plate group and the fourth partition plate group, respectively.

9. A process chamber comprising: A process chamber comprising a chamber body, a base, and an intake assembly according to any one of claims 1 to 8, wherein the intake assembly is provided on one side of the chamber body, and the base is provided within the chamber body and is used to place multiple wafers on it.

10. the base is provided with an inner ring mounting portion and an outer ring mounting portion for mounting the plurality of wafers thereon, the outer ring mounting portion surrounding the outer side of the inner ring mounting portion; The plurality of partition plates are divided into four partition plate groups, which are a first partition plate group, a second partition plate group, a third partition plate group, and a fourth partition plate group, the first partition plate group and the second partition plate group are provided symmetrically with respect to a central axis in the length direction of the intake sheet, the third partition plate group and the fourth partition plate group are provided symmetrically on both sides of the first partition plate group and the second partition plate group with respect to a central axis in the longitudinal direction of the intake sheet, an exhaust direction of the adjustment passages of the first partition plate group and the second partition plate group faces a central axis of the intake sheet in the length direction; an exhaust direction of the adjustment passages of the third partition plate group and the fourth partition plate group is away from a central axis of the intake sheet in the length direction, A process chamber as described in claim 9, characterized in that the combined length of the first partition plate group, the second partition plate group, the third partition plate group and the fourth partition plate group in the longitudinal direction is greater than or equal to the length of the outer ring mounting portion in the longitudinal direction, and the combined length of the first partition plate group and the second partition plate group in the longitudinal direction corresponds to the length of the inner ring mounting portion in the longitudinal direction.

11. A semiconductor processing device comprising the process chamber according to claim 9.

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