Semiconductor chip cleaning method and semiconductor device manufacturing method

Abstract

This method for cleaning a semiconductor chip includes: (a) a step for cleaning a plurality of semiconductor chips using a chemical solution, the semiconductor chips being disposed in a region that is on the surface of an adhesive film, the region being inside a dicing ring stuck on the surface; and (b) a step for picking up the cleaned semiconductor chips from the surface. The chemical solution is one type of chemical solution selected from the group consisting of a solvent system, an acid system, and an alkali system. This method for manufacturing a semiconductor device includes a step for bonding, to an adherend, a semiconductor chip that went through cleaning using this semiconductor chip cleaning method.

Description

[Technical Field]

[0001] The present disclosure relates to a method for cleaning a semiconductor chip and a method for manufacturing a semiconductor device. [Background technology]

[0002] Conventionally, semiconductor devices are manufactured through the following steps: a semiconductor wafer is attached to a dicing adhesive sheet, and the semiconductor wafer is then diced into semiconductor chips (dicing step). Then, steps such as picking up the semiconductor chips and bonding the semiconductor chips to an adherend (e.g., a substrate) are carried out. As various devices become more multifunctional, stacked MCPs (Multi-Chip Packages) that achieve high capacity by stacking semiconductor elements in multiple layers have become widespread. To achieve more advanced three-dimensional integration technology, for example, hybrid bonding, which connects different types of devices, has also been developed. Patent Document 1 discloses bonding multiple semiconductor chips to a substrate by hybrid bonding. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2001-197431 Summary of the Invention [Problem to be solved by the invention]

[0004] The present inventors have conducted research from various perspectives toward the practical application of advanced three-dimensional integration technologies such as hybrid bonding, and have found that it is useful to clean semiconductor chips more thoroughly than conventional methods before bonding them to an adherend. During the semiconductor device manufacturing process, for example, during the thinning and dicing steps of semiconductor wafers, foreign matter such as cutting debris is generated, and semiconductor chips with such foreign matter attached may be subjected to the next step. For example, hybrid bonding often involves bonding different types of devices together at their surfaces, and any foreign matter remaining between the two surfaces, even if it is very small, can reduce the connection reliability of the semiconductor device.

[0005] The present disclosure provides a semiconductor chip cleaning method capable of efficiently and thoroughly removing foreign matter adhering to semiconductor chips during the semiconductor device manufacturing process, and also provides a semiconductor device manufacturing method using semiconductor chips cleaned by this method. [Means for solving the problem]

[0006] One aspect of the present disclosure relates to a method for cleaning semiconductor chips, the method comprising: (a) cleaning a plurality of semiconductor chips arranged in an area on the surface of an adhesive film, the area being within a dicing ring attached to the surface, with a chemical solution; and (b) picking up the semiconductor chips from the surface after cleaning, wherein the chemical solution is one selected from the group consisting of a solvent-based, an acid-based, and an alkaline-based chemical solution.

[0007] Conventionally, semiconductor chips have been cleaned using water on the surface of an adhesive film (also called "dicing tape") to which a dicing ring is attached, but the semiconductor chips have never been cleaned using chemicals. For example, when bonding a semiconductor chip to a substrate via bumps formed on the semiconductor chip, cleaning with water has not caused any problems. In contrast, according to the present invention, by cleaning the semiconductor chip on the adhesive film with chemicals, it is possible to thoroughly remove foreign matter that has adhered to the semiconductor chip through various processes up to that point. Using a semiconductor chip that has been thoroughly cleaned can achieve excellent connection reliability in semiconductor devices manufactured using advanced three-dimensional integration technology.

[0008] The cleaning method described above is also useful in that it can be carried out efficiently in the semiconductor manufacturing process. That is, in the semiconductor device manufacturing process, it is not efficient to transport semiconductor chips to equipment for advanced cleaning of semiconductor chips and then return the cleaned semiconductor chips to the mounting equipment. In contrast, according to the present invention, advanced cleaning with chemicals is carried out on the surface of the adhesive film with the dicing ring attached to the adhesive film, so that the semiconductor chips after cleaning can be picked up and used directly in the next process.

[0009] One aspect of the present disclosure relates to a method for manufacturing a semiconductor device. This method includes a step of bonding a semiconductor chip that has been subjected to the above-described semiconductor chip cleaning method to an adherend. This method uses a highly cleaned semiconductor chip, making it possible to manufacture a semiconductor device with excellent connection reliability. [Effects of the Invention]

[0010] The present disclosure provides a semiconductor chip cleaning method capable of efficiently and highly removing foreign matter adhering to semiconductor chips during the semiconductor device manufacturing process, and also provides a semiconductor device manufacturing method using semiconductor chips cleaned by this method. [Brief explanation of the drawings]

[0011] [Figure 1] FIG. 1 is a cross-sectional view schematically showing a state in which preparations are complete for carrying out the cleaning method according to the present disclosure. [Figure 2] FIG. 2 is a cross-sectional view that schematically shows how the semiconductor chips are picked up after cleaning. [Figure 3] 3(a) to 3(c) are cross-sectional views schematically showing the process of manufacturing a semiconductor device by the method according to the first embodiment. [Figure 4] 4(a) to 4(c) are cross-sectional views schematically showing the process of manufacturing a semiconductor device by the method according to the first embodiment. [Figure 5] FIG. 5 is a cross-sectional view that schematically shows how the gap between two adjacent semiconductor chips is widened by applying tension to the adhesive film. [Figure 6] FIG. 6 is a cross-sectional view that schematically shows a state in which one semiconductor chip is bonded onto a substrate. [Figure 7] FIG. 7 is a cross-sectional view that schematically shows a state in which a plurality of semiconductor chips are stacked on a substrate. [Figure 8] FIG. 8 is a cross-sectional view schematically showing an example of a semiconductor device having a configuration in which a plurality of semiconductor chips are stacked. [Figure 9] 9(a) and 9(b) are cross-sectional views schematically showing the process of manufacturing a semiconductor device by the method according to the second embodiment. [Figure 10] 10(a) and 10(b) are cross-sectional views schematically showing the process of manufacturing a semiconductor device by the method according to the second embodiment. [Figure 11] 11(a) and 11(b) are cross-sectional views schematically showing the process of manufacturing a semiconductor device by the method according to the third embodiment. [Figure 12] 12(a) and 12(b) are cross-sectional views schematically showing the process of manufacturing a semiconductor device by the method according to the third embodiment. [Figure 13]13(a) and 13(b) are cross-sectional views schematically showing the process of manufacturing a semiconductor device by the method according to the fourth embodiment. [Figure 14] 14(a) to 14(c) are cross-sectional views schematically showing the process of manufacturing a semiconductor device by the method according to the fifth embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0012] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. However, the present disclosure is not limited to the following embodiments. In the following embodiments, components (including steps, etc.) are not essential unless otherwise specified. In the following description, identical or equivalent parts are given the same reference numerals, and duplicate explanations will be omitted. Furthermore, positional relationships such as up, down, left, and right will be based on the positional relationships shown in the drawings unless otherwise specified. The sizes of the components in each figure are conceptual, and the dimensional ratios of the drawings are not limited to the ratios shown.

[0013] The numerical values ​​and ranges in this specification do not limit the present disclosure. In this specification, numerical ranges indicated using "to" indicate ranges that include the numerical values ​​before and after "to" as the minimum and maximum values, respectively. In numerical ranges described in stages in this specification, the upper or lower limit value described in one numerical range may be replaced with the upper or lower limit value of another numerical range described in stages.

[0014] <Semiconductor chip cleaning method> A semiconductor chip cleaning method according to this embodiment will be described with reference to FIGS. 1 and 2. FIG. 1 is a cross-sectional view schematically showing a state in which preparations are complete for carrying out the cleaning method according to this embodiment. A plurality of semiconductor chips C shown in FIG. 1 are to be cleaned. FIG. 2 is a cross-sectional view schematically showing a state in which the semiconductor chips C are being picked up after cleaning. The semiconductor chips C are obtained through a process of singulating the workpiece Pw shown in FIG. 3(a), and include a circuit layer C1 and a die C2. The circuit layer C1 is obtained by singulating the circuit layer Lc, and the die C2 is obtained by singulating the semiconductor wafer W (see FIG. 4(c)).

[0015] The cleaning method according to this embodiment includes the following steps. (a) A step of cleaning, with a chemical solution, a plurality of semiconductor chips C arranged in a region R on the surface 5f of the adhesive film 5 and in a dicing ring DR attached to the surface 5f. (b) A step of picking up the semiconductor chip C from its surface after cleaning.

[0016] 1, multiple semiconductor chips C are arranged in an area R surrounded by a dicing ring DR. There are no particular limitations on the specific method for cleaning the semiconductor chips C, but for example, the semiconductor chips C are cleaned by spraying a chemical solution from a nozzle toward the semiconductor chips C. The chemical solution is, for example, a solvent-based chemical solution, an acid-based chemical solution, or an alkaline-based chemical solution.

[0017] The solvent-based chemical solution contains, for example, NMP (N-methyl-2-pyrrolidone), MEK (methyl ethyl ketone), PGMEA (propylene glycol monomethyl ether acetate), DMSO (dimethyl sulfoxide) or cyclopentanone, and can effectively remove foreign matter such as cutting chips, grinding chips, processing chips, and dust from the semiconductor chip C.

[0018] The acid-based chemical solution contains, for example, sulfuric acid, citric acid, or hydrofluoric acid, and can effectively remove foreign matter such as cutting chips, grinding chips, processing chips, and dust from the semiconductor chips C.

[0019] The alkaline chemical solution contains, for example, potassium hydroxide, sodium hydroxide, ammonium hydroxide, sodium bicarbonate, hydroxylamine, TMAH (tetramethylammonium hydroxide) or ammonia water, and can effectively remove foreign matter such as cutting chips, grinding chips, processing chips, and dust from the semiconductor chip C.

[0020] The adhesive film 5 is composed of a base film 1 and an adhesive layer 2 formed on the surface of the base film 1. Examples of the base film 1 include plastic films such as polytetrafluoroethylene film, polyethylene terephthalate film, polyethylene film, polypropylene film, polymethylpentene film, and polyimide film. Of these, a film that is resistant to chemicals used to clean the semiconductor chips C may be used. If necessary, the film may be subjected to a surface treatment such as primer application, UV treatment, corona discharge treatment, polishing treatment, or etching treatment.

[0021] The adhesive layer 2 is formed, for example, by applying a coating liquid containing a resin composition having a suitable adhesive strength to the surface of the substrate film 1. A resin composition that is resistant to chemicals used to clean the semiconductor chips C may be used. The adhesive layer 2 may have a property that its adhesive strength decreases when irradiated with activation energy (for example, ultraviolet light).

[0022] As shown in Fig. 2, the semiconductor chip C is pushed up by a push-up jig 42 to separate the semiconductor chip C from the adhesive layer 2, and the semiconductor chip C is then picked up by suction with a suction collet 44. If the adhesive layer 2 is one whose adhesive strength is reduced by irradiation with activation energy, the adhesive layer 2 is irradiated with activation energy rays prior to picking up. The irradiation dose is, for example, 10 to 1000 mJ / cm2. 2 and 100-700mJ / cm 2 or 200-500mJ / cm 2 may be.

[0023] According to the cleaning method of this embodiment, cleaning the semiconductor chip C on the adhesive film 5 with a chemical solution can remove foreign matter adhering to the semiconductor chip C to a greater extent than cleaning with water. By using a semiconductor chip C that has been thoroughly cleaned, a semiconductor device with excellent connection reliability can be manufactured. This cleaning method is also useful in that it can be implemented efficiently in the semiconductor manufacturing process. That is, according to this cleaning method, the deep cleaning with a chemical solution is performed on the surface 5f of the adhesive film 5 with the dicing ring DR attached to the adhesive film 5, so that the semiconductor chip C can be picked up after cleaning and directly subjected to the next process. The semiconductor chip C may be cleaned with pure water before and / or after the chemical cleaning.

[0024] <Method of manufacturing a semiconductor device> [First embodiment] A method for manufacturing a semiconductor device including the steps of carrying out the above cleaning method will now be described in detail. The method for manufacturing a semiconductor device according to the first embodiment includes the following steps. (1a) A step of forming a photoresist Rp on a workpiece Pw having a semiconductor wafer W having a first surface f1 and a second surface f2, and a circuit layer Lc formed on the first surface f1, so as to cover the circuit layer Lc (see Figure 3(a)). (2a) A step of forming a groove G1 in the photoresist Rp, which reaches the circuit layer Lc, by subjecting the photoresist Rp to exposure and development processing (see FIG. 3(b)). (3a) A step of cutting the circuit layer Lc through the grooves G1 by plasma dicing and half-cutting the semiconductor wafer W to form grooves G2 (see FIG. 3(c)). (4a) Step of peeling off the photoresist Rp from the circuit layer Lc (see FIG. 4(a)). (5a) Cover the circuit layer Lc with backgrind tape T BG (See Figure 4(b)). (6a) The semiconductor wafer W is ground from the second surface f2 side to obtain the backgrinding tape T BGA step of obtaining a plurality of semiconductor chips C on the surface (see FIG. 4(c)). (7a) A plurality of semiconductor chips C are attached to a backgrind tape T BG a step of transferring the semiconductor chips C from the surface 5f of the adhesive film 5 onto the surface 5f of the adhesive film 5, and attaching a dicing ring DR onto the surface 5f so as to surround the semiconductor chips C (see FIG. 1). (8a) A step of carrying out the above-mentioned semiconductor chip cleaning method. (9a) Step of bonding the cleaned semiconductor chip C to an adherend (see FIG. 6).

[0025] The workpiece Pw shown in FIG. 3(a) includes a semiconductor wafer W and a circuit layer Lc. The thickness of the semiconductor wafer W is, for example, 5 to 775 μm and may be 50 to 300 μm. The diameter of the semiconductor wafer W is, for example, 50 to 300 mm and may be 150 to 300 mm. The circuit layer Lc has various electronic circuits (e.g., integrated circuits and power supply circuits) formed thereon depending on the application of the semiconductor device. The thickness of the circuit layer Lc is, for example, 0.01 to 50 μm and may be 0.1 to 10 μm. The photoresist Rp is made of a photosensitive insulating material, and a groove G1 can be formed in the photoresist Rp by a photolithography process (FIG. 3(b)).

[0026] The groove G2 shown in FIG. 3(c) penetrates the circuit layer Lc and extends from the first surface f1 to the interior of the semiconductor wafer W. The groove G2 does not reach the second surface f2. The groove G2 is formed by plasma dicing. One known plasma dicing process is the Bosch process. In the Bosch process, silicon constituting the semiconductor wafer W is etched by alternately performing a passivation step using C4F8 plasma and an etching step using SF6 plasma. That is, in the passivation step, a fluorocarbon polymer film (hereinafter simply referred to as the "polymer film") is isotropically formed on the entire inner surface of the groove G1. Then, in the etching step, a bias is applied to the semiconductor wafer W, and the polymer film at the bottom of the groove G1 is removed by ion etching. Meanwhile, the polymer film on the sidewall of the groove G1 remains and forms the sidewall of the groove G1. Only the silicon exposed at the bottom of the groove G1, where the polymer film has been removed, is etched by fluorine radicals. By repeating these steps, the groove G2 is formed. The side surfaces of the grooves G2 formed in this manner are covered with a polymer film. If the polymer film peels off in a subsequent process, it may become a foreign substance that reduces the reliability of the semiconductor device. The circuit layer Lc is divided by the grooves G2, thereby forming multiple circuit layers C1.

[0027] After the step (6a) above, the thickness of the die C2 (the thickness of the semiconductor chip C excluding the circuit layer C1) is, for example, 5 to 775 μm, and may be 50 to 300 μm. Grinding debris generated in the step (6a) above can also become foreign matter that reduces the reliability of the semiconductor device.

[0028] After the step (7a) above, before carrying out the semiconductor chip cleaning method, tension may be applied to the adhesive film 5 to widen the gap between two adjacent semiconductor chips C. That is, as shown in FIG. 5, tension is applied to the adhesive film 5 by pushing up the inside of the dicing ring DR with the ring Ra from the base film 1 side of the adhesive film 5. This makes it easier to supply the chemical solution to the side of the semiconductor chip C in the step (8a) above, allowing the polymer film adhering to the side to be sufficiently removed with the chemical solution. To remove the polymer film, it is preferable to use an HFE (hydrofluoroether)-based or HAD (hydroxylamine)-based chemical solution. On the other hand, to remove grinding debris, it is preferable to use the above-mentioned solvent-based, acid-based, or alkaline-based chemical solution.

[0029] 6 is a cross-sectional view schematically showing a state in which a semiconductor chip C is bonded to a substrate 10 (adherend) after cleaning. For example, a die bonding film (not shown) is used to bond the semiconductor chip C to the substrate 10. As shown in FIG. 7, when multiple semiconductor chips C are stacked, the object (adherend) to which the second and subsequent semiconductor chips C are bonded is the semiconductor chip C in the lower layer. A semiconductor device 30 shown in FIG. 8 is fabricated through a process of connecting the substrate 10 and the multiple semiconductor chips C with wires w, respectively, and a process of sealing the multiple semiconductor chips C with a resin material 20.

[0030] [Second embodiment] The method for manufacturing a semiconductor device according to the second embodiment includes the following steps. (1b) A step of placing a workpiece Pw in a region R within a dicing ring DR attached to the surface 5f of an adhesive film 5 (see FIG. 9(a)). (2b) A step of forming a photoresist Rp so as to cover the circuit layer Lc (see FIG. 9(b)). (3b) A step of forming a groove G3 in the photoresist Rp, which reaches the circuit layer Lc, by performing exposure and development processing on the photoresist Rp (see FIG. 10(a)). (4b) A step of cutting the circuit layer Lc and the semiconductor wafer W through the grooves G3 by plasma dicing to obtain a plurality of semiconductor chips C on the surface 5f of the adhesive film 5 (see FIG. 10(b)). (5b) A step of carrying out the above-mentioned semiconductor chip cleaning method (see FIGS. 1 and 2). (6b) A step of bonding the cleaned semiconductor chip C to an adherend (see FIG. 6).

[0031] This embodiment will be described mainly with respect to differences from the first embodiment. In this embodiment, steps (2b) to (5b) are performed on the surface of the adhesive film 5 to which the dicing ring DR is attached. After step (4b), as shown in FIG. 10(b), photoresist Rp remains on the upper surface of the semiconductor chip C. The photoresist Rp may be removed using a resist remover prior to step (5b), or may be removed using a chemical solution in step (5b). A solvent-based chemical solution (especially NMP) is preferably used to remove the photoresist Rp. The groove G4 shown in FIG. 10(b) penetrates the circuit layer Lc and the semiconductor wafer W and reaches the surface 5f of the adhesive film 5. The groove G4 may be formed by plasma dicing, similar to the groove G2 described above. The polymer film resulting from plasma dicing may be removed using an HFE-based or HDA-based chemical solution, similar to the first embodiment.

[0032] [Third embodiment] The method for manufacturing a semiconductor device according to the third embodiment includes the following steps. (1c) A step of placing the workpiece Pw in the region R within the dicing ring DR attached on the surface 5f of the adhesive film 5 (see FIG. 11(a)). (2c) A step of forming a protective film Mp so as to cover the circuit layer Lc (see FIG. 11(b)). (3c) A step of cutting the protective film Mp and the circuit layer Lc with a laser to form a groove G5 reaching the first surface f1 of the semiconductor wafer W (see FIG. 12(a)). (4c) A step of cutting the semiconductor wafer W through the grooves G5 by plasma dicing to obtain a plurality of semiconductor chips C on the surface 5f of the adhesive film 5 (see FIG. 12(b)). (5c) A step of carrying out the above-mentioned semiconductor chip cleaning method (see FIGS. 1 and 2). (6c) A step of bonding the cleaned semiconductor chip C to an adherend (see FIG. 6).

[0033] This embodiment will be described mainly with respect to differences from the first and second embodiments. In this embodiment, a protective film Mp is formed in the above-described step (2c). The protective film Mp is intended to prevent damage to the circuit layer Lc. The protective film Mp is composed of, for example, a water-soluble resin and can be formed by applying a coating containing such a resin to the surface of the workpiece Pw. The protective film Mp remains on the upper surface of the semiconductor chip C after the above-described step (4c) (see FIG. 12(b)). The protective film Mp is removed with pure water in the above-described step (5c). Note that the groove G6 shown in FIG. 12(b) penetrates the semiconductor wafer W and reaches the surface 5f of the adhesive film 5. The groove G6 may be formed by plasma dicing, similar to the above-described groove G2. The polymer film resulting from plasma dicing may be removed using an HFE-based or HDA-based chemical solution, similar to the first embodiment.

[0034] In this embodiment, the grooves G6 may be formed by blade dicing instead of plasma dicing. For example, if the circuit layer Lc includes a low-k film, the grooves G5 are formed by cutting the circuit layer Lc with a laser to prevent peeling of the low-k film, which has relatively low mechanical strength. The subsequent process of cutting the semiconductor wafer W (the process of forming the grooves G6) may also be performed by blade dicing. A low-k film is a film made of a material with a low dielectric constant and is primarily used as an interconnect layer, i.e., an insulating material between metal wiring that electrically connects different electronic components within a chip. The use of a low-k film can reduce parasitic capacitance between wiring, thereby improving signal transmission speed and suppressing crosstalk between wiring. The process of forming grooves in the circuit layer Lc with a laser is called laser grooving.

[0035] [Fourth embodiment] The method for manufacturing a semiconductor device according to the fourth embodiment includes the following steps. (1d) A step of placing the workpiece Pw in the region R within the dicing ring DR attached on the surface 5f of the adhesive film 5 (see FIG. 13(a)). (2d) A step of cutting the workpiece Pw by blade dicing to obtain a plurality of semiconductor chips C on the surface 5f of the adhesive film 5 (see FIG. 13(b)). (3d) A step of carrying out the above-mentioned semiconductor chip cleaning method (see FIGS. 1 and 2). (4d) A step of bonding the cleaned semiconductor chip to an adherend (see FIG. 6).

[0036] This embodiment will be described mainly in terms of differences from the first, second, and third embodiments. In this embodiment, in step (2d) above, the workpiece Pw is divided into multiple semiconductor chips C by blade dicing. The grooves G7 formed by blade dicing penetrate the circuit layer Lc and the semiconductor wafer W and reach the surface 5f of the adhesive film 5. The grinding debris generated in step (2d) above can become foreign matter that reduces the reliability of the semiconductor device. The grinding debris generated by blade dicing is preferably removed using the above-mentioned solvent-based, acid-based, or alkaline-based chemicals. According to this embodiment, the steps of forming a photoresist or a protective film are unnecessary, and the steps of removing them are also unnecessary.

[0037] [Fifth embodiment] The method for manufacturing a semiconductor device according to the fifth embodiment includes the following steps. (1e) A step of placing the workpiece Pw in the region R within the dicing ring DR attached on the surface 5f of the adhesive film 5 (see FIG. 14(a)). (2e) A step of cutting the circuit layer Lc with a laser to form a groove G8 reaching the first surface f1 of the semiconductor wafer W (see FIG. 14(b)). (3e) A step of cutting the semiconductor wafer W through the grooves G8 by blade dicing to obtain a plurality of semiconductor chips C on the surface 5f of the adhesive film 5 (see FIG. 14(c)). (4e) A step of carrying out the above-mentioned semiconductor chip cleaning method (see FIGS. 1 and 2). (5e) A step of bonding the semiconductor chip after cleaning to an adherend (see FIG. 6).

[0038] This embodiment will be described mainly in terms of differences from the fourth embodiment. In this embodiment, the circuit layer Lc is cut using a laser in step (2e). Because a laser is used to cut the circuit layer Lc, peeling of the low-k film can be suppressed even if the circuit layer Lc includes a low-k film. Next, the semiconductor wafer W is cut using blade dicing. The groove G9 shown in FIG. 14(c) penetrates the semiconductor wafer W and reaches the surface 5f of the adhesive film 5. The grinding debris generated in steps (2e) and (3e) can become foreign matter that reduces the reliability of the semiconductor device. According to this embodiment, the grinding debris generated in these steps can be removed in the subsequent step (4e). It is preferable to use the above-mentioned solvent-based, acid-based, or alkaline-based chemical solution as the chemical solution.

[0039] Although the embodiments of the present disclosure have been described in detail above, the present disclosure is not limited to the above embodiments. For example, in the second, third, fourth, and fifth embodiments, the semiconductor wafer W is used as is without back-grinding. However, the semiconductor wafer W may be back-ground before being placed in the region R of the adhesive film 5. That is, in the above-described embodiments, before placing the workpiece Pw in the region R of the adhesive film 5, the semiconductor wafer W may be ground from the second surface f2 side with a back-grinding tape attached to the workpiece Pw so as to cover the circuit layer Lc. In this case, the circuit layer Lc may also include a low-k film. [Explanation of symbols]

[0040] 1...base film, 2...adhesive layer, 5...adhesive film, 5f...surface of adhesive film, 10...substrate (adherend), 20...resin material, 30...semiconductor device, 42...push-up jig, 44...suction collet, C...semiconductor chip, C1...singulated circuit layer, C2...die, DR...dicing ring, f1...first surface, f2...second surface, G1, G2, G3, G4, G5, G6, G7, G8, G9...groove portion, Lc...circuit layer, Mp...protective film, Pw...workpiece, R...area, Rp...photoresist, T BG...backgrinding tape, W...semiconductor wafer, w...wire.

Claims

1. (a) cleaning a plurality of semiconductor chips arranged in an area on a surface of an adhesive film and in an area within a dicing ring attached to the surface by spraying the chemical solution from a nozzle onto the semiconductor chips; (b) picking up the semiconductor chip from the surface after cleaning; Including, (a) before the cleaning step, a groove is formed between two adjacent semiconductor chips of the plurality of semiconductor chips by plasma dicing, and at least a part of a side surface of the groove is covered with a fluorocarbon polymer film; the chemical solution is capable of removing the fluorocarbon polymer film from the side surface, a side surface of the groove portion forms at least a part of a side surface of the semiconductor chip; A method for cleaning semiconductor chips, comprising: applying tension to the adhesive film to widen the gap between the two adjacent semiconductor chips compared to before the tension was applied; supplying the chemical solution to the side surface of the groove; and removing the fluorocarbon-based polymer film with the chemical solution in step (a).

2. (a) cleaning, with a chemical solution, a plurality of semiconductor chips arranged in an area on a surface of an adhesive film and within a dicing ring attached to the surface; (b) picking up the semiconductor chip from the surface after cleaning; Including, (a) before the cleaning step, a groove is formed between two adjacent semiconductor chips of the plurality of semiconductor chips by plasma dicing, and at least a part of a side surface of the groove is covered with a fluorocarbon polymer film; the chemical solution is capable of removing the fluorocarbon polymer film from the side surface, a side surface of the groove portion forms at least a part of a side surface of the semiconductor chip; A method for cleaning semiconductor chips, comprising: applying tension to the adhesive film to widen the gap between the two adjacent semiconductor chips compared to before the tension was applied; supplying the chemical solution to the side surface of the groove; and removing the fluorocarbon-based polymer film with the chemical solution in step (a).

3. The semiconductor chip includes a die and a circuit layer provided so as to cover one surface of the die; 3. The method for cleaning a semiconductor chip according to claim 2, wherein in step (a), the semiconductor chip is placed on the surface of the adhesive film with the die facing downward and the circuit layer facing upward.

4. the plasma dicing is a process of forming the grooves in the workpiece on the surface of the adhesive film to separate the workpiece into individual semiconductor chips; 4. The method for cleaning semiconductor chips according to claim 1, wherein the workpiece comprises a semiconductor wafer having a first surface and a second surface, and a circuit layer formed on the first surface.

5. 5. The method for cleaning semiconductor chips according to claim 4, wherein the step of grinding the semiconductor wafer from the second surface side is not carried out on the surface of the adhesive film.

6. 4. The method for cleaning semiconductor chips according to claim 1, wherein the chemical solution is a hydrofluoroether-based chemical solution.

7. 4. The method for cleaning semiconductor chips according to claim 1, wherein the chemical solution is a hydroxylamine-based chemical solution.

8. forming a photoresist on a workpiece comprising a semiconductor wafer having a first surface and a second surface and a circuit layer formed on the first surface, the photoresist covering the circuit layer; a step of forming a groove portion in the photoresist that reaches the circuit layer by subjecting the photoresist to an exposure and development process; cutting the circuit layer through the grooves by plasma dicing and half-cutting the semiconductor wafer; stripping the photoresist from the circuit layer; applying a backgrind tape to cover the circuit layer; grinding the semiconductor wafer from the second surface side to obtain a plurality of semiconductor chips on the surface of the backgrind tape; transferring the plurality of semiconductor chips from the surface of the backgrinding tape onto the surface of an adhesive film, and attaching a dicing ring to the surface of the adhesive film so as to surround the plurality of semiconductor chips; A step of carrying out the semiconductor chip cleaning method according to any one of claims 1 to 3; a step of bonding the semiconductor chip after cleaning to an adherend; A method for manufacturing a semiconductor device, comprising:

9. placing a workpiece comprising a semiconductor wafer having a first surface and a second surface and a circuit layer formed on the first surface in an area on a surface of the adhesive film and within a dicing ring attached to the surface; forming a photoresist to cover the circuit layer; a step of forming a groove portion in the photoresist that reaches the circuit layer by subjecting the photoresist to an exposure and development process; a step of cutting the circuit layer and the semiconductor wafer through the grooves by plasma dicing to obtain a plurality of semiconductor chips on the surface of the adhesive film; A step of carrying out the semiconductor chip cleaning method according to any one of claims 1 to 3; a step of bonding the semiconductor chip after cleaning to an adherend; A method for manufacturing a semiconductor device, comprising:

10. placing a workpiece comprising a semiconductor wafer having a first surface and a second surface and a circuit layer formed on the first surface in an area on a surface of the adhesive film and within a dicing ring attached to the surface; forming a protective film to cover the circuit layer; cutting the protective film and the circuit layer with a laser to form a groove that reaches the first surface; cutting the semiconductor wafer through the grooves by plasma dicing to obtain a plurality of semiconductor chips on the surface of the adhesive film; A step of carrying out the semiconductor chip cleaning method according to any one of claims 1 to 3; a step of bonding the semiconductor chip after cleaning to an adherend; A method for manufacturing a semiconductor device, comprising:

11. 11. The method for manufacturing a semiconductor device according to claim 10, wherein the step of performing the cleaning method includes removing the protective film.

12. before placing the workpiece in the area on the surface of the adhesive film; 10. The method for manufacturing a semiconductor device according to claim 9, further comprising the step of grinding the semiconductor wafer from the second surface side with a backgrind tape attached to the workpiece so as to cover the circuit layer.

13. before placing the workpiece in the area on the surface of the adhesive film; 11. The method for manufacturing a semiconductor device according to claim 10, further comprising the step of grinding the semiconductor wafer from the second surface side with a backgrind tape attached to the workpiece so as to cover the circuit layer.

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