Heat Treatment Equipment

Abstract

To provide a substrate heating device capable of suppressing heat conduction from a base for heating a mounted substrate to a support part.SOLUTION: A heat treatment device includes: a base having a first surface mounting a substrate and a second surface on the side opposite to the first surface and including a heater in the inside; and a support part connected on the side of the second surface. The base includes a first screw part on the side of the second surface, and the support part includes a second screw part fastened to the first screw part.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present disclosure relates to a heat treatment apparatus. [Background technology]

[0002] Patent Documents 1 and 2 each disclose a mounting table structure for mounting an object to be processed, which includes a mounting table provided with a heating means and a support column connecting and supporting the mounting table. Patent Document 3 also discloses a stage including a plate in which a heater is embedded and a stem supporting the plate. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2009-054871 [Patent Document 2] Japanese Patent Application Laid-Open No. 2011-165891 [Patent Document 3] Japanese Patent Application Laid-Open No. 2004-207465 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a substrate heating device that suppresses heat conduction from a base that heats a placed substrate to a support portion. [Means for solving the problem]

[0005] According to one aspect of the present disclosure, there is provided a heat treatment apparatus comprising a base having a first surface on which a substrate is placed and a second surface opposite the first surface, the base having a heater inside, and a support portion connected to the side of the second surface, the base having a first screw portion on the side of the second surface, and the support portion having a second screw portion fastened to the first screw portion. [Effects of the Invention]

[0006] The present disclosure provides a substrate heating device that suppresses heat conduction from a base that heats a placed substrate to a support portion. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a schematic cross-sectional view of a substrate processing apparatus in which a heat treatment apparatus according to a first embodiment is used. [Figure 2] FIG. 2 is a schematic cross-sectional view of the heat treatment apparatus according to the first embodiment. [Figure 3] FIG. 3 is a perspective view of the heat treatment apparatus according to the first embodiment. [Figure 4] FIG. 4 is a cross-sectional view of the heat treatment apparatus according to the first embodiment. [Figure 5] FIG. 5 is a bottom view of a base provided in the heat treatment apparatus according to the first embodiment. [Figure 6] FIG. 6 is a cross-sectional view of a shaft portion of a support portion of the heat treatment device according to the first embodiment. [Figure 7] FIG. 7 is a schematic cross-sectional view of a heat treatment apparatus according to the second embodiment. [Figure 8] FIG. 8 is a schematic cross-sectional view of a heat treatment apparatus of a comparative example. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In this specification and the drawings, substantially identical components are designated by the same reference numerals, and redundant description will be omitted.

[0009] In the directions of parallel, right-angle, orthogonal, horizontal, vertical, up / down, left / right, etc., deviations are permitted to the extent that they do not impair the effects of the embodiments. The shape of the corners is not limited to right angles and may be rounded like an arch. Parallel, right-angle, orthogonal, horizontal, and vertical may include approximately parallel, approximately right-angle, approximately orthogonal, approximately horizontal, and approximately vertical.

[0010] First Embodiment [Substrate processing apparatus 100] A substrate processing apparatus 100 in which a heat treatment apparatus 2 according to a first embodiment is used will be described with reference to Fig. 1. Fig. 1 is a schematic cross-sectional view of the substrate processing apparatus 100 in which a heat treatment apparatus 2 according to a first embodiment is used.

[0011] The substrate processing apparatus 100 includes a processing chamber 1, a heat treatment device 2, a shower head 3, an exhaust unit 4, a gas supply mechanism 5, a high-frequency power supply unit 6, and a control unit 7. Each component will be described below.

[0012] [Processing vessel 1] The processing vessel 1 is made of a metal such as aluminum and has a substantially cylindrical shape. The processing vessel 1 accommodates a substrate W. A loading / unloading port 11 is formed in a sidewall of the processing vessel 1 for loading or unloading the substrate W. The loading / unloading port 11 is opened and closed by a gate valve 12.

[0013] An annular exhaust duct 13 having a rectangular cross section is provided on the main body of the processing vessel 1. A slit 13a is formed along the inner peripheral surface of the exhaust duct 13. An exhaust port 13b is formed in the outer wall of the exhaust duct 13.

[0014] A ceiling wall 14 is provided on the upper surface of exhaust duct 13 to close the upper opening of processing vessel 1 via an insulating member 16. The space between exhaust duct 13 and insulating member 16 is airtightly sealed with a seal ring 15. A partition member 17 divides the interior of processing vessel 1 into upper and lower sections.

[0015] A cooling unit 18 for cooling the heat treatment device 2 is provided on the bottom surface of the processing vessel 1. A flow path through which a refrigerant, for example, cooling water, flows is provided inside the cooling unit 18. An opening 18h is formed in the cooling unit 18 to which wiring or the like can be added.

[0016] [Heat treatment device 2] The heat treatment device 2 supports the substrate W horizontally within the processing chamber 1. The heat treatment device 2 includes a base 21 and a support portion 22. The base 21 is formed in a disk shape corresponding to the size of the substrate W. The base 21 is supported by the support portion 22. The support portion 22 includes a shaft portion 22a and an attachment portion 22b. The heat treatment device 2 is provided with a cover member 24 made of ceramics such as alumina so as to cover the outer peripheral region of the upper surface and the side surfaces.

[0017] Fig. 2 is a schematic cross-sectional view showing a state in which the heat treatment device 2 according to the first embodiment is attached to a cooling unit 18. Fig. 3 is a perspective view of the heat treatment device 2 according to the first embodiment. Fig. 4 is a cross-sectional view of the heat treatment device 2 according to the first embodiment. Note that the heater 21h is omitted in Fig. 4.

[0018] The base 21 has a disk-like shape. The shaft 22a of the support part 22 has a cylindrical shape. The attachment part 22b of the support part 22 has a ring-like shape with a rectangular cross section.

[0019] The heat treatment device 2 is attached to the cooling part 18 of the processing vessel 1. Specifically, the attachment part 22b of the heat treatment device 2 is sandwiched between the fixing part 22c and the cooling part 18, thereby attaching the heat treatment device 2 to the cooling part 18. The fixing part 22c is fixed to the cooling part 18 by a screw 22n.

[0020] The base 21 includes a heater 21h therein. In other words, the heater 21h is embedded inside the base 21.

[0021] The heater 21h heats the substrate W. The heater 21h generates heat when power is supplied from the heater power supply 23. The output of the heater 21h is controlled by a temperature signal from a thermocouple 23tc provided near the top surface of the base 21. By controlling the output of the heater 21h by the temperature signal from the thermocouple 23tc, the substrate W is controlled to a predetermined temperature. The heater power supply 23 supplies power to the heater 21h.

[0022] (Base 21) The base 21 supports the substrate W and heats the substrate W. The base 21 has an upper surface 21S1 and a lower surface 21S2 located opposite the upper surface 21S1. The substrate W is placed on the upper surface 21S1. A support 22 is connected to the lower surface 21S2 side.

[0023] The base 21 is made of a machinable ceramic. The machinable ceramic has high heat resistance. Because of its high heat resistance, the machinable ceramic is suitable for applications in which the substrate W is heated to 300°C or higher. Furthermore, the machinable ceramic has higher thermal shock resistance than the conventionally used aluminum nitride (AlN) and alumina (Al2O3). Furthermore, the machinable ceramic has high workability for cutting and the like. Furthermore, the machinable ceramic has relatively high corrosion resistance.

[0024] Suitable machinable ceramics include silicon-based ceramics such as silicon nitride (SiN), silicon carbide (SiC), silicon oxide (SiO), and mixtures thereof, as well as boron nitride-based ceramics. The machinable ceramics may also contain mica.

[0025] 5 is a bottom view of the base 21 of the heat treatment apparatus 2 according to the first embodiment. The base 21 is formed, for example, by cutting a disk-shaped piece of free-cutting ceramic. The base 21 has a groove 21g that is annular in bottom view on the lower surface 21S2 side. The groove 21g is formed by cutting from the lower surface 21S2 inward.

[0026] The groove 21g has a first side surface 21g1 located toward the center of the base 21 in a bottom view, a second side surface 21g2 located outside the base 21 in a bottom view, and a bottom surface 21g3 that is approximately parallel to the bottom surface 21S2. The bottom surface 21g3 is connected to the top surface 21S1 sides of the first side surface 21g1 and the second side surface 21g2.

[0027] The base 21 has a groove 21g formed therein, thereby providing a protrusion 21e surrounded by the groove 21g in bottom view. The protrusion 21e is formed in a cylindrical shape with a first side surface 21g1 of the groove 21g as its lateral surface. A male thread 21s is formed on the lateral surface of the protrusion 21e, i.e., the first side surface 21g1. The male thread 21s is formed by, for example, cutting. The male thread 21s is fastened to a female thread 22as formed on the shaft portion 22a.

[0028] The base 21 has a coating layer 21r such as aluminum nitride (AlN) on the surface of the machinable ceramic. By providing the coating layer 21r such as aluminum nitride (AlN), it is possible to improve resistance to halogens (halogen resistance).

[0029] (Support part 22) The support part 22 supports the base 21. The support part 22 is provided between the base 21 and the cooling part 18. The support part 22 is connected to the base 21 on the lower surface 21S2 side.

[0030] The support portion 22 is made of a machinable ceramic, similar to the base 21. In other words, the shaft portion 22a and the attachment portion 22b are each made of a machinable ceramic. The shaft portion 22a and the attachment portion 22b may each be made of the same ceramic material as the base 21.

[0031] (Shaft part 22a) 6 is a cross-sectional view of the shaft portion 22a of the support portion 22 of the heat treatment device 2 according to the first embodiment. The shaft portion 22a is formed, for example, by cutting a cylindrical piece of machinable ceramic. The shaft portion 22a has a cylindrical shape with an inner surface 22a1 and an outer surface 22a2.

[0032] The shaft portion 22a has an internal thread 22as formed on an inner surface 22a1 of the end portion on the base 21 side. The internal thread 22as is formed by, for example, cutting. The internal thread 22as is fastened to the external thread 21s of the base 21.

[0033] In the heat treatment device 2 according to this embodiment, the base 21 and the support part 22 are connected by a male screw 21s formed on the base 21 and a female screw 22as formed on the shaft part 22a of the support part 22. The threaded connection between the male screw 21s and the female screw 22as acts as a thermal resistor in the transfer of heat. Therefore, according to the heat treatment device 2 according to this embodiment, the transfer of heat from the base 21 to the support part 22 can be suppressed.

[0034] The shaft portion 22a has an external thread 22at formed on an outer surface 22a2 of the end portion on the mounting portion 22b side. The external thread 22at is formed by, for example, cutting. The external thread 22at is fastened to the internal thread 22bs of the mounting portion 22b.

[0035] In the heat treatment device 2 according to this embodiment, the shaft portion 22a and the attachment portion 22b are connected by a male thread 22at formed on the shaft portion 22a and a female thread 22bs formed on the attachment portion 22b. The threaded connection between the male thread 2at and the female thread 22bs acts as a thermal resistor in the transfer of heat. Therefore, the heat treatment device 2 according to this embodiment can suppress the transfer of heat inside the support portion 22.

[0036] The shaft portion 22a has a coating layer 22ar of aluminum nitride (AlN) or the like on the surface of the free-cutting ceramic. By providing the coating layer 22ar of aluminum nitride (AlN) or the like, it is possible to improve resistance to halogens (halogen resistance).

[0037] (Mounting portion 22b) The attachment portion 22b is a member that is pressed by the fixing portion 22c when attaching the heat treatment device 2 to the cooling portion 18. The attachment portion 22b is pressed by the fixing portion 22c, and the attachment portion 22b is sandwiched between the fixing portion 22c and the cooling portion 18, whereby the heat treatment device 2 is attached to the cooling portion 18.

[0038] The attachment portion 22b is formed, for example, by cutting a disk-shaped piece of free-cutting ceramic. The shaft portion 22a has an annular shape with an inner surface 22b1 and a rectangular cross section.

[0039] A female screw 22bs is formed on an inner surface 22b1 of the end of the attachment portion 22b on the shaft portion 22a side. The female screw 22bs is formed by, for example, cutting. The female screw 22bs is fastened to the male screw 22at of the shaft portion 22a.

[0040] The mounting portion 22b has a groove 22g on the bottom surface thereof. A seal member 22p such as an O-ring is provided in the groove 22g. The seal member 22p maintains airtightness between the processing chamber 1 and the outside.

[0041] The attachment portion 22b has a coating layer 22br made of aluminum nitride (AlN) or the like on the surface of the free-cutting ceramic. By providing the coating layer 22br made of aluminum nitride (AlN) or the like, it is possible to improve resistance to halogens (halogen resistance).

[0042] [Shower head 3] The showerhead 3 supplies a processing gas into the processing chamber 1 in a shower-like manner. The showerhead 3 is made of metal. The showerhead 3 is provided to face the heat processing device 2. The showerhead 3 has approximately the same diameter as the heat processing device 2.

[0043] The showerhead 3 includes a main body 31 and a shower plate 32. The main body 31 is fixed to the ceiling wall 14 of the processing vessel 1. The shower plate 32 is connected below the main body 31. A gas diffusion space 33 is formed between the main body 31 and the shower plate 32. The ceiling wall 14 of the processing vessel 1 and the main body 31 are provided with gas inlet holes 36 that penetrate through the centers of each. The gas inlet holes 36 are connected to the gas diffusion space 33.

[0044] A downwardly protruding annular protrusion 34 is formed on the periphery of the shower plate 32. Gas ejection holes 35 are formed on the inner flat surface of the annular protrusion 34. When the heat treatment device 2 is in the processing position, a processing space 38 is formed between the heat treatment device 2 and the shower plate 32. In addition, the upper surface of the cover member 24 and the annular protrusion 34 are close to each other, forming an annular gap 39.

[0045] [Exhaust section 4] The exhaust unit 4 exhausts the inside of the processing chamber 1. The exhaust unit 4 includes an exhaust pipe 41 and an exhaust mechanism 42. The exhaust pipe 41 is connected to the exhaust port 13b. The exhaust mechanism 42 is connected to the exhaust pipe 41. The exhaust mechanism 42 includes a vacuum pump, a pressure control valve, etc.

[0046] In the exhaust unit 4, the gas inside the processing vessel 1 that reaches the exhaust duct 13 via the slit 13a is exhausted from the exhaust duct 13 through the exhaust pipe 41 by the exhaust mechanism .

[0047] [Gas supply mechanism 5] The gas supply mechanism 5 supplies a processing gas into the processing chamber 1. The gas supply mechanism 5 is connected to the gas inlet 36 via a gas supply line 51.

[0048] The substrate processing apparatus 100 is a capacitively coupled plasma apparatus, in which the heat treatment apparatus 2 serves as a lower electrode and the shower head 3 serves as an upper electrode. The heat treatment apparatus 2 serving as the lower electrode is grounded via a capacitor (not shown).

[0049] [High frequency power supply unit 6] The high frequency power supply unit 6 supplies high frequency power to the shower head 3 serving as the upper electrode. High frequency power (hereinafter also referred to as "high frequency power") is applied to the shower head 3 serving as the upper electrode by the high frequency power supply unit 6. The high frequency power supply unit 6 includes a power feed line 61, a matching box 62, and a high frequency power supply 63.

[0050] The high-frequency power supply 63 is a power supply that generates high-frequency power. The high-frequency power has a frequency suitable for generating plasma. The frequency of the high-frequency power is, for example, within a range of 450 kilohertz to 100 megahertz. The high-frequency power supply 63 is connected to the main body 31 of the showerhead 3 via a matching box 62 and a power supply line 61. The matching box 62 has a circuit for matching the output reactance of the high-frequency power supply 63 with the reactance of the load (upper electrode).

[0051] Although the high frequency power supply unit 6 has been described as applying high frequency power to the shower head 3 serving as the upper electrode, the present invention is not limited to this. It may be configured to apply high frequency power to the heat treatment device 2 serving as the lower electrode. Furthermore, the substrate processing device does not necessarily have to be configured to apply high frequency power.

[0052] [Control Unit 7] The control unit 7 is, for example, a computer, and includes a CPU (Central Processing Unit), RAM (Random Access Memory), ROM (Read Only Memory), an auxiliary storage device, etc. The CPU operates based on a program stored in the ROM or the auxiliary storage device, and controls the operation of the substrate processing apparatus. The control unit 7 may be provided inside or outside the substrate processing apparatus. When the control unit 7 is provided outside the substrate processing apparatus, the control unit 7 can control the substrate processing apparatus via a communication means such as a wired or wireless communication means.

[0053] <Actions and Effects> According to the heat treatment apparatus 2 of the first embodiment, the base 21 and the support portion 22 are connected by screws, so that heat conduction from the base 21, which heats the placed substrate W, to the support portion 22 can be suppressed.

[0054] To heat the substrate W, a portion of the heat generated in the base 21 of the heat treatment device 2 is transferred to the cooling unit 18 through the support 22. The base 21 of the heat treatment device 2 is connected to the support 22 by fastening a male screw 21s provided on the lower surface 21S2 side to a female screw 22as of the support 22. The transfer of heat at the connecting portion between the male screw 21s and the female screw 22as is suppressed compared to, for example, when the base 21 and the support 22 are integrally formed, because the connecting portion acts as a thermal resistor. In other words, the amount of heat transferred from the base 21 to the support 22 is suppressed at the connecting portion between the male screw 21s and the female screw 22as.

[0055] Therefore, according to the heat treatment apparatus 2 of the first embodiment, it is possible to suppress heat conduction from the base 21, which heats the placed substrate W, to the support part 22. Furthermore, according to the heat treatment apparatus 2 of the first embodiment, it is possible to suppress heat conduction from the base 21 to the support part 22, and therefore it is possible to shorten the length of the support part 22. By shortening the length of the support part 22, it is possible to shorten the vertical length of the processing vessel 1. By shortening the vertical length of the processing vessel 1, it is possible to reduce the size of the substrate processing apparatus 100. In other words, by shortening the vertical length of the processing vessel 1, it is possible to reduce the volume of the processing vessel 1 provided in the substrate processing apparatus 100.

[0056] To explain the effects, a heat treatment device 2z of a comparative example will be described. Fig. 8 is a schematic cross-sectional view of the heat treatment device 2z of the comparative example. The heat treatment device 2z includes a base 21z and a support portion 22z. The base 21z and the support portion 22z are each formed of ceramics such as aluminum nitride. The base 21z and the support portion 22z are integrally formed by diffusion bonding or the like.

[0057] The heat treatment device 2z has a fixing portion 22c fixed to the cooling portion 18 by a screw 22nz. A seal member 22pz is provided between the heat treatment device 2z and the cooling portion 18.

[0058] In the heat treatment device 2z, the base 21z and the support part 22z are integrally formed by diffusion bonding or the like, so that a large amount of heat is transferred from the base 21z to the support part 22z. For example, if the base 21z and the support part 22z are formed of aluminum nitride, aluminum nitride has high thermal conductivity, and therefore a large amount of heat flows to the cooling part 18 as indicated by the arrowed line A.

[0059] On the other hand, the sealing member 22pz between the heat treatment device 2z and the cooling unit 18 is formed of, for example, a vacuum sealing material. In order to satisfy the heat resistance temperature of the sealing member 22pz, it is necessary to keep the temperature of the joint portion of the support part 22z and the cooling unit 18 at a predetermined temperature or lower.

[0060] In the heat treatment device 2z, by increasing the vertical length Hz of the support part 22z, the distance between the joint part between the base 21z and the cooling part 18 of the support part 22z is increased, thereby lowering the temperature of the joint part between the base 21z and the cooling part 18. In other words, by increasing the distance between the joint part between the base 21z and the cooling part 18 of the support part 22z, the base 21z and the cooling part 18 are separated from each other, creating a temperature difference between the base 21z and the cooling part 18 of the support part 22z.

[0061] For example, if a material with low thermal conductivity is used for the support, the base and the support will be made of dissimilar materials, which have different thermal expansion coefficients and are difficult to bond while preventing cracks.

[0062] According to the heat treatment device 2 of the first embodiment, the amount of heat transferred from the base 21 to the support part 22 is suppressed at the connection part between the male screw 21s and the female screw 22as. By suppressing the amount of heat transferred from the base 21 to the support part 22, the temperature of the part of the heat treatment device 2 that connects to the cooling part 18 can be lowered. By lowering the temperature of the part of the heat treatment device 2 that connects to the cooling part 18, the vertical length H of the support part 22 of the heat treatment device 2 can be shortened. In other words, the distance between the base 21 of the heat treatment device 2 and the cooling part 18 can be shortened. Therefore, the processing vessel 1 of the heat treatment device 2 can be made smaller, and the size of the heat treatment device 2 can be reduced.

[0063] In the heat treatment device 2 according to the first embodiment, the support part 22 is fastened by screws between the shaft part 22a and the attachment part 22b, which further reduces heat transfer between the shaft part 22a and the attachment part 22b. Therefore, the heat transfer from the base 21 to the cooling part 18 can be further reduced in the support part 22. By reducing the heat transfer from the base 21 to the cooling part 18 in the support part 22, the vertical length H of the support part 22 of the heat treatment device 2 can be further reduced.

[0064] Furthermore, according to the heat treatment device 2 of the first embodiment, since the heat treatment device 2 is made of machinable ceramics, the heat treatment device 2 can be manufactured by cutting using a general-purpose device.

[0065] For example, the heat treatment device 2z of the comparative example requires a dedicated special processing device to integrally form the base 21z and the support portion 22z by diffusion bonding, etc. The diffusion bonding technology between ceramics requires expensive and highly difficult techniques, which increases the cost required to manufacture the heat treatment device 2z.

[0066] According to the heat treatment device 2 of the first embodiment, the manufacturing process can be simplified by eliminating the special manufacturing process used to manufacture the heat treatment device 2z of the comparative example. By manufacturing the heat treatment device 2 using the simplified manufacturing process, the cost required for manufacturing can be reduced.

[0067] Furthermore, according to the heat treatment apparatus 2 of the first embodiment, by providing a coating layer of aluminum nitride (AlN) or the like on the surface of the machinable ceramic, it is possible to improve resistance to halogens used in substrate processing (halogen resistance).

[0068] In chemical vapor deposition (CVD) or atomic layer deposition (ALD), gases containing halogens are used as raw materials. Generally, machinable ceramics have low corrosion resistance to gases containing halogens.

[0069] According to the heat treatment device 2 of the first embodiment, the surface of the machinable ceramic is provided with a coating layer such as aluminum nitride (AlN), thereby improving halogen resistance. By providing a coating layer on the surface of the machinable ceramic, the amount of highly corrosion-resistant material such as aluminum nitride used can be reduced, thereby reducing costs.

[0070] The upper surface 21S1 of the base 21 is an example of a first surface, the lower surface 21S2 is an example of a second surface, the male screw 21s is an example of a first screw portion, and the female screw 22as is an example of a second screw portion.

[0071] <Modification> In the heat treatment device 2 according to the first embodiment, the male thread 21s is formed on the first side surface 21g1 of the groove portion 21g of the base 21, but the female thread may be formed on the second side surface 21g2. When the female thread is formed on the second side surface 21g2, the male thread is formed on the outer surface 22a2 of the end portion of the shaft portion 22a on the base 21 side.

[0072] Furthermore, in the heat treatment device 2 according to the first embodiment, the groove 21g of the base 21 has the male thread 21s formed therein, but a protrusion protruding from the lower surface 21S2 may be provided and the male thread may be formed on the side surface of the protrusion.

[0073] Second Embodiment [Heat treatment device 102] Next, a description will be given of a heat treatment apparatus 102 according to a second embodiment. Fig. 7 is a schematic cross-sectional view of the heat treatment apparatus 102 according to the second embodiment.

[0074] The heat treatment device 102 horizontally supports the substrate W in the processing chamber 1. The heat treatment device 102 also heats the substrate W. The heat treatment device 102 includes a base 121 and a support portion 122. The base 121 is formed in a disk shape having a size corresponding to the substrate W. The base 121 is supported by the support portion 122.

[0075] The heat treatment device 102 further includes a base 125 between the support 122 and the cooling unit 18 .

[0076] The base 121 has a disk-like shape. The support portion 122 has a cylindrical portion 122a having a cylindrical shape and an annular portion 122b having a ring-like shape with a rectangular cross section. The cylindrical portion 122a and the annular portion 122b are integrally formed.

[0077] The base 121 includes a heater 121h therein. In other words, the heater 121h is embedded inside the base 121. The heater 121h is driven using the same driving method as the heater 21h in the first embodiment, and therefore a description thereof will be omitted.

[0078] (Base 121) The base 121 supports the substrate W and heats the substrate W. The base 121 has an upper surface 121S1 and a lower surface 121S2 located opposite the upper surface 121S1. The substrate W is supported on the upper surface 121S1. A support 122 is connected to the lower surface 121S2 side.

[0079] The base 121 is made of a free-cutting ceramic. The base 121 has a groove 121g that is annular in bottom view on a bottom surface 121S2, similar to the base 21. The groove 121g is formed by cutting from the bottom surface 121S2 inward.

[0080] The groove 121g has a male screw 121s formed on a side surface located toward the center of the base 121 when viewed from below. The male screw 121s is formed by, for example, cutting. The male screw 121s is fastened to a female screw 122s formed on the support portion 122.

[0081] The base 121 has a coating layer 121r made of aluminum nitride (AlN) or the like on the surface of the free-cutting ceramic. By providing the coating layer 121r made of aluminum nitride (AlN) or the like, it is possible to improve resistance to halogens (halogen resistance).

[0082] (Support part 122) The support portion 122 supports the base 121. The support portion 122 is provided between the base 121 and the platform portion 125.

[0083] The support portion 122 is made of a free-cutting ceramic material, similar to the base 121. The support portion 122 may be made of the same ceramic material as the base 121.

[0084] The support portion 122 has a cylindrical portion 122a and an annular portion 122b. The cylindrical portion 122a and the annular portion 122b are integrally formed. The cylindrical portion 122a and the annular portion 122b may be integrally formed, for example, by molding using a mold, or may be integrally formed by cutting from a block of machinable ceramic. Alternatively, the cylindrical portion 122a and the annular portion 122b may be integrally formed by diffusion bonding or the like.

[0085] The cylindrical portion 122a has a female screw 122s formed on the inner surface of the end portion on the base 121 side. The female screw 122s is formed by, for example, cutting. The female screw 122s is fastened to the male screw 121s of the base 121.

[0086] The annular body 122b is provided with a threaded hole 122h that penetrates vertically and has a thread formed on the inside. The annular body 122b is fixed to the base 125 by fastening a screw 125n into the threaded hole 122h. The support 122 is fixed to the base 125 by fixing the annular body 122b to the base 125. Furthermore, a nut 125m may be provided on the screw 125n to prevent the screw 125n from loosening. However, the nut 125m may not be provided. Furthermore, the heat treatment device 102 is provided with a metal seal 125e between the support 122 and the base 125 to prevent leakage.

[0087] Although the support portion 122 has a screw hole 122h, a through hole may be formed instead of the screw hole 122h, and the annular portion 122b may be fixed to the base portion 125 with a nut 125m.

[0088] The support portion 122 has a coating layer 122r such as aluminum nitride (AlN) on the surface of the machinable ceramic. By providing the coating layer 122r such as aluminum nitride (AlN), it is possible to improve resistance to halogens (halogen resistance).

[0089] (Base 125) The base 125 fixes the support 122 to the cooling unit 18. The base 125 is provided between the support 122 and the cooling unit 18.

[0090] The base 125 is made of metal. The base 125 has an upper plate 125a that is annular in top view, a cylindrical portion 125b, and a lower plate 125c that is annular in top view. The upper plate 125a, the cylindrical portion 125b, and the lower plate 125c are integrally formed. The base 125 is formed by machining, for example, bending.

[0091] The upper plate portion 125a supports the annular portion 122b of the support portion 122 via a metal seal 125e. The upper plate portion 125a is fastened to the support portion 122 with screws 125n. The cylindrical portion 125b connects the upper plate portion 125a and the lower plate portion 125c. The cylindrical portion 125b separates the upper plate portion 125a from the lower plate portion 125c.

[0092] The lower plate 125c is placed on the cooling part 18. The lower plate 125c has a groove 125g on the surface facing the cooling part 18. A seal member 125p such as an O-ring is provided in the groove 125g. The seal member 125p maintains airtightness between the processing chamber 1 and the outside.

[0093] <Actions and Effects> According to the heat treatment device 102 of the second embodiment, in addition to the effects and advantages of the heat treatment device 2 of the first embodiment, the length of the support part 122 can be further shortened. Furthermore, according to the heat treatment device 102 of the second embodiment, by using screws to fasten the support part 122 and the base part 125, heat transfer between the support part 122 and the base part 125 can be further suppressed. Furthermore, according to the heat treatment device 102 of the second embodiment, a metal material is used for the base part 125, so that manufacturing costs such as material costs can be reduced.

[0094] For example, in the stand 125, an insulating sleeve may be inserted into the screw 125n in order to insulate it from the base 121 side.

[0095] The heat treatment apparatus according to the present embodiment disclosed herein should be considered to be illustrative in all respects and not restrictive. The above-described embodiment can be modified and improved in various ways without departing from the scope and spirit of the appended claims. The features described in the above-described embodiments can be configured in other ways as long as they are not inconsistent, and can be combined as long as they are not inconsistent. [Explanation of symbols]

[0096] 100 Substrate processing apparatus 1. Processing container 2, 102 Heat treatment device 21, 121 Foundation 21S1, 121S1 top surface 21S2, 121S2 bottom side 21g, 121g groove 21h, 121h heater 21r, 121r coating layer 21s, 121s male thread 22, 122 Support part 22as, 122s female thread 22a Shaft 22a1 Inner surface 22a2 External surface 22ar, 22br coating layer 122a Cylindrical part 125 Daibu W substrate

Claims

1. a base having a first surface on which a substrate is placed and a second surface opposite to the first surface, the base having a heater therein; a support portion connected to the second surface side, the base has a first screw portion on the second surface side, The support portion includes a shaft portion and an attachment portion, The shaft portion is a second threaded portion at a first end portion on the base side, the second threaded portion being fastened to the first threaded portion; a third threaded portion at a second end opposite the base; The mounting portion has a fourth threaded portion fastened to the third threaded portion. Heat treatment equipment.

2. The base and the support are each made of ceramics. The heat treatment device according to claim 1 .

3. The ceramic includes silicon nitride. The heat treatment device according to claim 2 .

4. Further provided is a base portion on which the support portion is placed. The heat treatment device according to any one of claims 1 to 3.

5. The base is formed of metal. The heat treatment device according to claim 4 .

6. Each of the base and the support has a coating layer on a surface thereof. The heat treatment device according to any one of claims 1 to 5.

7. The coating layer is formed of aluminum nitride. The heat treatment device according to claim 6 .

8. the base has an annular groove on the second surface side, The first thread portion is formed in the groove portion. The heat treatment device according to any one of claims 1 to 7.

9. The support portion has a cylindrical shape, The second threaded portion is formed on the inner surface of the cylindrical shape. The heat treatment device according to any one of claims 1 to 8.

10. the first threaded portion is a male thread, The second threaded portion is a female thread. The heat treatment device according to any one of claims 1 to 9.

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